A minimum operating voltage test method for an in-chip memory module

Abstract

The application discloses a minimum working voltage test method of a chip internal storage module and belongs to the technical field of voltage test. ccmin‑1 ; in a preset number of times, the working voltage of a second data unit is gradually increased or decreased based on V ccmin‑1 , and the minimum working voltage V ccmin‑2 of the second data unit is acquired; ccmin‑2 if the minimum working voltage V ccmin‑2 of the second data unit is not acquired in a preset step number, the minimum working voltage V ccmin‑2 of the second data unit is acquired by using a bisection method; ccmin‑3 the minimum working voltage V ccmin‑i of a third data unit to the minimum working voltage V ccmin‑i of an i-th storage block is acquired according to the step of acquiring the minimum working voltage V ccmin‑2 of the second data unit; ccmin‑1 , V ccmin‑2 to V ccmin‑i is acquired, and the maximum value is taken as the minimum working voltage of the storage module. The minimum working voltage test method of the chip internal storage module can improve test efficiency.

Description

Technical Field

[0001] This invention relates to the field of voltage testing technology, and in particular to a method for testing the minimum operating voltage of an in-chip memory module. Background Technology

[0002] Minimum operating voltage testing is a crucial step in verifying the characteristics and reliability of storage modules, directly impacting the product's power consumption, performance, and stability. A storage module is composed of several independent data units, and the minimum operating voltage of the module is the maximum value among the minimum operating voltages of all data units. However, minimum operating voltage testing for each storage module starts from the same initial voltage and takes a considerable amount of time, thus increasing testing costs. Summary of the Invention

[0003] The purpose of this invention is to provide a method for testing the minimum operating voltage of an on-chip memory module, which can improve testing efficiency and reduce testing costs.

[0004] This invention provides a method for testing the minimum operating voltage of an on-chip memory module. The chip includes at least one memory module, which can be divided into several data units arranged in an array. The several data units are subjected to minimum operating voltage testing according to a preset sequential path, including at least the following: Step 100: Within the preset voltage range [V low V high Within [the specified range], the minimum operating voltage V of the first data unit at the starting position is tested using the binary search method. ccmin-1 ; Step 200: Set the minimum operating voltage V of the first data unit to... ccmin-1 The starting test voltage for the adjacent second data unit; Step 200a: If the test passes, then use V ccmin-1 V, as the second data unit high Based on V high Set the first preset voltage amplitude V step1 If the step voltage decrease test fails within three times, the current test voltage V... high -0 V step1 Or the current test voltage V high -1 V step1 Or the current test voltage V high -2 V step1 V, as the second data unit ccmin-2 If the second data unit passes the test within three attempts, then the binary search method is used to ensure that the voltage range [V] is met.low V high -3 V step1 [Find the V that passed the test] ccmin-2 ; Step 200b: If the test fails, then V ccmin-1 V, as the second data unit low Based on V low Set the second preset voltage amplitude V step2 The step voltage increment test, if passed within three times, indicates that the second data unit test has passed, and the current test voltage V... low +1 V step2 Or the current test voltage V low +2 V step2 Or the current test voltage V low +3 V step2 V, as the second data unit ccmin-2 If the second data unit fails the test within three attempts, then the binary search method should be used to test at least within the voltage range [V]. low +3 V step2 V high [Find the V that passed the test] ccmin-2 ; Step 300: Test the third data unit adjacent to the second data unit according to the preset path sequence, with V ccmin-2 As the starting test voltage of the third data unit, repeat step 200 to find V. ccmin-3 ; Following the steps above, test several data units contained in the storage module in a pre-defined sequential path.

[0005] In one embodiment of the present invention, the testing method further includes obtaining V of a plurality of data units of the storage module. ccmin-i Let i = 1, 2, ..., M integers, and take Max[V]. ccmin-i [This refers to the minimum operating voltage of the storage module.]

[0006] In one embodiment of the present invention, the preset continuous path sequence is the first data unit, the second data unit to the i-th data unit.

[0007] In one embodiment of the present invention, the first preset voltage amplitude V step1 Equal to the second preset voltage amplitude V step2 .

[0008] In one embodiment of the present invention, the first preset voltage amplitude Vstep1 With the second preset voltage amplitude V step2 The voltage is set based on the difference in minimum operating voltage between the adjacent data units.

[0009] In one embodiment of the present invention, step 200 further includes determining whether the second data unit is in V. ccmin-1 Check if the test passed.

[0010] In one embodiment of the present invention, step 200a includes the following steps: If the second data unit is in V ccmin-1 The following test passed, V ccmin-1 V, as the second data unit high Based on V high Decrease n times the first preset voltage amplitude V step1 The current test voltage V of the second data unit high -n V step1 ; Determine the second data unit in V high -n V step1 Has the test passed? If the second data unit is in V high -n V step1 The following test failed, so V will be removed. high -(n-1) V step1 The minimum operating voltage V of the second data unit ccmin-2 ; If the second data unit is in V high -n V step1 The test passed; now determine if n equals N. If n equals N, the bisection method is used within the voltage range [V]. low V high -n V step1 [Find the V that passed the test] ccmin-2 ; If n is less than N, let n = n + 1, and return based on V. ccmin-1 Decrease n times the first preset voltage amplitude V step1 The current test voltage V of the second data unit high -n V step1 .

[0011] In one embodiment of the present invention, step 200b includes the following steps: If the second data unit is in V ccmin-1 The following test failed, so V will be removed. ccmin-1 V, as the second data unit low Based on V low Increase n first preset voltage amplitudes V step2 The current test voltage V of the second data unit low +n V step2 ; Determine the second data unit in V low +n V step2 Has the test passed? If the second data unit is in V low +n V step2 The following test passed, V low +n V step2 The minimum operating voltage V of the second data unit ccmin-2 ; If the second data unit is in V low +n V step2 If the test fails, determine if n equals N; If n equals N, the bisection method is used within the voltage range [V]. low +n V step2 V high [Find the V that passed the test] ccmin-2 ; If n is less than N, let n = n + 1, and return based on V. ccmin-1 Increase n first preset voltage amplitudes V step2 The current test voltage V of the second data unit low +n V step2 .

[0012] In summary, the present invention provides a method for testing the minimum operating voltage of an in-chip memory module, which obtains the minimum operating voltage V of the first data unit through a binary search method. ccmin-1 This ensures more accurate test results. Through V-based... ccmin-1 Set the first preset voltage amplitude V step1 Step voltage decrease test or first preset voltage amplitude V step2 The step voltage increment test is used to find the V of the second data unit. ccmin-2 This can improve testing efficiency. When the second data unit V is not found within a preset number of incremental or decremental test attempts... ccmin-2 Switch to binary search to continue searching for Vccmin-2 This can improve testing efficiency and ensure testing accuracy.

[0013] Of course, any product implementing this invention does not necessarily need to achieve all of the advantages described above at the same time. Attached Figure Description

[0014] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 This is a schematic diagram of a minimum operating voltage test system for an on-chip memory module in one embodiment.

[0016] Figure 2 This is a schematic diagram of a method for testing the minimum operating voltage of an on-chip memory module in one embodiment.

[0017] Figure 3 This is a schematic diagram of a preset continuous path sequence in one embodiment.

[0018] Figure 4 This is a schematic diagram illustrating the specific steps of the dichotomy method in one embodiment.

[0019] Figure 5 This is a schematic diagram illustrating the specific steps of a minimum operating voltage testing method in one embodiment.

[0020] Label Explanation: 101. Testing machine; 102. Probe station; 103. Test head; 104. Probe card. Detailed Implementation

[0021] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0023] In the description of this invention, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," and "right," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Similarly, the terms "high" and "low," indicating degree, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a high or low position, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0024] The minimum operating voltage of a semiconductor memory module refers to the lowest power supply voltage required to continuously and error-free complete all read and write operations under specific operating frequencies, ambient temperatures, and process angles. Minimum operating voltage testing is a crucial step in memory module characteristic verification and reliability assessment, directly affecting the product's power consumption, performance, and stability. A memory module is composed of several independent data units, and the minimum operating voltage of the memory module is the maximum value among the minimum operating voltages of all data units. However, testing the minimum operating voltage of each data unit using methods such as binary search or sequential adaptive testing is not only time-consuming but also increases testing costs. Therefore, this invention provides a method for testing the minimum operating voltage of an on-chip memory module, which improves testing efficiency and reduces testing costs.

[0025] Please see Figure 1 As shown, the minimum operating voltage testing system for a memory module includes a tester 101, a probe station 102, a test head 103, and a probe card 104. The probe station 102 is electrically connected to the tester 101 and carries the chip. The test head 103 is electrically connected to the tester 101, and the probe card 104 is electrically connected to the test head 101. The probes on the probe card 104 test the minimum operating voltage of the memory module on the chip. During testing, the probe station 102 moves below the probe card 104, bringing the chip into contact with the probes and providing feedback to the tester 101. Following the program, the tester 101 applies power and input signals to the memory module through the test head 103 and the probe card 104. After the minimum operating voltage test of one memory module is completed, the test result is returned to the tester 101, and simultaneously, the probe station 102 descends to separate the chip from the probes, switching to the next memory module and repeating the above test process.

[0026] Please see Figure 2As shown, this invention provides a method for testing the minimum operating voltage of an on-chip memory module. The chip includes at least one memory module, which can be divided into several data units arranged in an array. The several data units are subjected to minimum operating voltage testing according to a preset sequential path, including: Step 100: Within the preset voltage range [V] low V high Within [the specified range], the minimum operating voltage V of the first data unit at the starting position is tested using the binary search method. ccmin-1 .

[0027] Step 200: Set the minimum operating voltage V of the first data unit. ccmin-1 The starting test voltage for the adjacent second data unit.

[0028] Step 200a: If the test passes, then use V ccmin-1 V as the second data unit high Based on V high Set the first preset voltage amplitude V step1 If the step voltage decrease test fails within three attempts, the second data unit test will be reset to the current test voltage V. high -0 V step1 Or the current test voltage V high -1 V step1 Or the current test voltage V high -2 V step1 V as the second data unit ccmin-2 If the second data unit passes the test within three attempts, then the binary search method should be used at least within the voltage range [V]. low V high -3 V step1 [Find the V that passed the test] ccmin-2 .

[0029] Step 200b: If the test fails, then V ccmin-1 V as the second data unit low Based on V low Set the second preset voltage amplitude V step2 For the step voltage increment test, if it passes the second data unit test within three attempts, the current test voltage V is [value missing]. low +1 V step2 Or the current test voltage V low +2 V step2 Or the current test voltage V low +3 Vstep2 V as the second data unit ccmin-2 If the second data unit test fails within three attempts, then the binary search method should be used to test at least within the voltage range [V]. low +3 V step2 V high [Find the V that passed the test] ccmin-2 .

[0030] Step 300: Test the third data unit adjacent to the second data unit according to the preset path sequence, with V ccmin-2 As the starting test voltage of the third data unit, repeat step 200 to find V. ccmin-3 .

[0031] Following the steps above, test several data units contained in the storage module in a pre-defined sequential path.

[0032] Please see Figure 3 As shown, in one embodiment of the present invention, the data unit includes a first data unit, a second data unit, and so on to the i-th data unit, where i = 1, 2, ..., M integers. The preset sequential path order is the first data unit, the second data unit, and so on to the i-th data unit. The minimum operating voltage V of the first data unit is obtained from step S100. ccmin-1 Steps S200 to S300 obtain the V of the second data unit. ccmin-2 When acquiring the V of the third data unit ccmin-3 V to the i-th data unit ccmin-i At that time, according to the V of the second data unit, ccmin-2 The steps are as follows. For example, to obtain the V of the third data unit. ccmin-3 At that time, based on the second data unit V ccmin-2 Set the first preset voltage amplitude V step1 Step voltage decrease test or second preset voltage amplitude V step2 Step voltage increment test.

[0033] Please see Figure 4 As shown, in one embodiment of the present invention, step S100 is performed within a preset voltage range [V]. low V high Within [the specified range], the minimum operating voltage V of the first data unit at the starting position is tested using the binary search method. ccmin-1 Step S100 specifically includes steps S101 to S106.

[0034] Step S101: Determine the preset maximum voltage V of the storage module. high and preset minimum voltage V low .

[0035] Step S102, Vhigh and V low arithmetic mean 1 / 2 (V high +V low ) as the midpoint voltage V mid .

[0036] Step S103: Determine the voltage V at the midpoint of the first data unit. mid Whether the test passes or not, if the first data unit has a midpoint voltage V mid If the test passes, proceed to step S1041; if the first data unit is at the midpoint voltage V mid The test failed. Proceed to step S1042.

[0037] Step S1041: Convert the midpoint voltage V mid V as the first data unit high .

[0038] Step S1042: Convert the midpoint voltage V mid V as the first data unit low .

[0039] Step S1051: Determine the V of the first data unit high With preset minimum voltage V low If the difference is less than the preset precision, then the V of the first data unit... high With preset minimum voltage V low If the difference is less than the preset precision, proceed to step S1061; if the V of the first data unit is less than the preset precision, proceed to step S1061. high With preset minimum voltage V low If the difference is greater than or equal to the preset precision, proceed to step S102.

[0040] Step S1052: Determine the preset maximum voltage V high V with the first data unit low Is the difference less than the preset accuracy? If the preset maximum voltage V high V with the first data unit low If the difference is less than the preset accuracy, proceed to step S1062; if the preset maximum voltage V high V with the first data unit low If the difference is greater than or equal to the preset precision, proceed to step S102.

[0041] Step S1061: Transfer the V of the first data unit high The minimum operating voltage V of the first data unit ccmin-1 .

[0042] Step S1062: Set the preset maximum voltage V high The minimum operating voltage V of the first data unitccmin-1 .

[0043] Please see Figure 4 As shown, in one embodiment of the present invention, in steps S101 to S106, the test voltage range is continuously divided in half using a bisection method to gradually narrow the test range until the minimum operating voltage V of the first data unit is obtained. ccmin-1 This ensures the accuracy of the test. In this embodiment, the preset accuracy is, for example, 0.02V. The present invention does not limit the magnitude of the preset accuracy; in other embodiments, the preset accuracy can be set according to actual conditions.

[0044] Please see Figure 5 As shown, in one embodiment of the present invention, step 200 first determines the minimum operating voltage V of the second data unit in the first data unit. ccmin-1 Whether the test passes or not depends on whether the second data unit meets the minimum operating voltage V of the first data unit. ccmin-1 If the following test passes, then V will be... ccmin-1 V as the second data unit high Based on V high Set the first preset voltage amplitude V step1 The step voltage decrease test continues until the minimum operating voltage V of the second data unit is obtained. ccmin-2 If the second data unit has the minimum operating voltage V of the first data unit. ccmin-1 If the following test fails, then V will be... ccmin-1 V as the second data unit low Based on V low Set the second preset voltage amplitude V step2 The step voltage increment test continues until the minimum operating voltage V of the second data unit is obtained. ccmin-2 Step S200 specifically includes steps S201 to S207.

[0045] Step S201: Determine if the second data unit is in V ccmin-1 Whether the test passes or not, if the second data unit is in V ccmin-1 If the test passes, proceed to step S2021; if the second data unit is in V ccmin-1 The test failed. Proceed to step S2022.

[0046] Step S2021, V ccmin-1 V as the second data unit high Based on V high Decrease n times the first preset voltage amplitude V step1 The current test voltage V, which serves as the second data unit. high -n V step1 .

[0047] Step S2031: Determine if the second data unit is in V high -n V step1 Whether the test passes or not, if the second data unit is in V high -n V step1 If the test fails, proceed to step S2041; if the second data unit is in V high -n V step1 The test passed, proceed to step S2051.

[0048] Step S2041, V high -(n-1) V step1 The minimum operating voltage V for the second data unit ccmin-2 .

[0049] Step S2051: Determine if n is equal to N; if n is less than N, proceed to step S2061; if n is equal to N, proceed to step S2071.

[0050] Step S2061: Let n = n + 1, then return to step S2021.

[0051] Step S2071: Use the binary divide method within the voltage range [V] low V high -n V step1 [Find the V that passed the test] ccmin-2 .

[0052] Step S2022, V ccmin-1 V as the second data unit low Based on V low Add n second preset voltage amplitudes V step2 The current test voltage V, which serves as the second data unit. low +n V step2 .

[0053] Step S2032: Determine if the second data unit is in V low +n V step2 Whether the test passes or not, if the second data unit is in V low +n V step2 If the test passes, proceed to step S2042; if the second data unit is in V low +n V step2 The test failed, proceed to step S2052.

[0054] Step S2042, V low +n V step2 The minimum operating voltage V for the second data unit ccmin-2 .

[0055] Step S2052: Determine if n is equal to N; if n is less than N, proceed to step S2062; if n is equal to N, proceed to step S2072.

[0056] Step S2062: Let n = n + 1, then return to step S2022.

[0057] Step S2072: Use the binary divide method within the voltage range [V] low +n V step2 V high [Find the V that passed the test] ccmin-2 .

[0058] Please see Figure 5 As shown, in one embodiment of the present invention, in steps S201 to S207, the first preset voltage amplitude V step1 Equal to the second preset voltage amplitude V step2 The first preset voltage amplitude V step1 Second preset voltage amplitude V step2 The voltage is set based on the difference in minimum operating voltage between adjacent data units. In this embodiment, the first preset voltage amplitude V step1 With the second preset voltage amplitude V step2 For example, 0.02V. This invention does not limit the first preset voltage amplitude V. step1 Equal to the second preset voltage amplitude V step2 The size can be adjusted in other embodiments according to the actual situation.

[0059] Please see Figure 5 As shown, in one embodiment of the present invention, in steps S201 to S207, N is set according to the actual process conditions. The more mature and stable the process, the smaller N is, and vice versa. N is a positive integer, and the value of n ranges from 1 to N. In this embodiment, N is, for example, equal to 3. Based on V... ccmin-1 Add N second preset voltage amplitudes V step2 For example, first test adding a second preset voltage amplitude V. step2 Can the second data unit test pass? If not, then test with two additional second preset voltage amplitudes V. step2 Can the second data unit test be passed, up to three additional second preset voltage amplitudes V? step2The second data unit is tested to determine if it passes the test. In other embodiments, the size of N can be set according to the actual situation.

[0060] Please see Figure 5 As shown, in one embodiment of the present invention, for example when testing the minimum operating voltage V of the third data unit... ccmin-3 At that time, the original V in steps S201 to S207 will be... ccmin-1 Replace all with V ccmin-2 Original V ccmin-2 Replace all with V ccmin-3 And the original second data unit is replaced with the third data unit for testing. This process is repeated until the V value of the i-th data unit is obtained. ccmin-i .

[0061] Please see Figure 4 and Figure 5 As shown, in one embodiment of the present invention, if the second data unit passes through the first preset voltage amplitude V N times... step1 Step voltage decrease test or N times the second preset voltage amplitude V step2 The step voltage increment test did not obtain V. ccmin-2 Then, following steps S101 to S107, a binary search method is used to find V. ccmin-2 For example, using the voltage range [V] in step S2181. low V high -n V step2 V within ] high -n V step2 Replace the preset maximum voltage V in step S101 high Or, for example, using [V] in step S2182 low +n V step2 V high V within ] low +n V step2 Replace the preset minimum voltage V in step S100 low To find V ccmin-2 .

[0062] Please see Figure 5 As shown, in one embodiment of the present invention, the testing method further includes step S400, which involves obtaining the minimum operating voltage of all data units according to steps S100 to S300, and then taking the maximum value among all the minimum operating voltages as the minimum operating voltage of the storage module.

[0063] Step S400: Obtain V of several data units of the storage module. ccmin-i Let i = 1, 2, ..., M integers, and take Max[V].ccmin-i This serves as the minimum operating voltage for the storage module.

[0064] Please see Figure 5 As shown, in one embodiment of the present invention, after steps S100 to S300 obtain the minimum operating voltage of all data units, step S400 takes the maximum value among them as the minimum operating voltage of the storage module. In this embodiment, for example, there are 32 data units. After testing the minimum operating voltage of all 32 data units, the maximum value among the 32 minimum operating voltages is taken as the minimum operating voltage of the storage module, ensuring that all data units can pass the test at this maximum value.

[0065] In this application, the storage module has, for example, 32 data units, V high For example, 1.2V, V low For example, 0.54V, the first preset voltage amplitude V step1 With the second preset voltage amplitude V step2 For example, given a minimum operating voltage of 0.02V, the minimum operating voltages of the first data unit, second data unit, through the thirty-second data unit are, for example, 0.74V, 0.82V, 0.84V, 0.84V, 0.82V, 0.84V, 0.76V, 0.78V, 0.9V, 0.86V, 0.82V, 0.8V, 0.76V, 0.88V, 0.78V, 0.74V, and 0.86V respectively. Table 1 shows the comparison of the total number of test steps for testing the minimum operating voltage of the memory module using the binary search method, the sequential adaptive method, and the test method of this application, for the following voltage values: V, 1.20V, 0.92V, 0.74V, 0.76V, 0.78V, 0.76V, 0.78V, 0.76V, 0.74V, 0.76V, 0.82V, 0.82V, 0.86V, 0.8V. In this application, the binary search method involves testing according to steps S101 to S107, and the sequential adaptive method involves the next data unit performing the first preset voltage amplitude V K times based on the minimum operating voltage of the previous data unit. step1 Step voltage decrease test or second preset voltage amplitude V step2 The step voltage increment test is performed until the test passes. K is a positive integer. As can be seen from Table 1, the test method of the present invention has the highest efficiency and can guarantee the correctness of the results.

[0066] Table 1. Comparison of the total number of test steps for the minimum operating voltage of the memory module using the bisection method, the sequential adaptive method, and the test method of this application.

[0067] Specifically, for example, the minimum operating voltage of the eighteenth data unit (1.2V) differs significantly from that of the seventeenth data unit (0.86V). The minimum operating voltage of the eighteenth data unit was tested using both the sequential adaptive method and the test method of this application. The specific number of test steps for testing the minimum operating voltage of the eighteenth data unit using the sequential adaptive method is shown in Table 2, and the specific number of test steps for testing the minimum operating voltage of the eighteenth data unit using the test method of this application is shown in Table 3.

[0068] Table 2. Specific test steps for testing the minimum operating voltage of the 18th data unit using the sequential adaptive method.

[0069] Table 3. Specific test steps for testing the minimum operating voltage of the eighteenth data unit according to the test method of this application.

[0070] As can be seen from Tables 2 and 3, the test method of this application is more efficient than the sequential adaptive method. The test method of this application avoids the performance loss of the sequential adaptive method when encountering large differences in the minimum operating voltage of adjacent data units, thus making the test time shorter.

[0071] This invention provides a method for testing the minimum operating voltage of an on-chip memory module. The testing method includes: within a preset voltage range [V... low V high Within [the specified range], the minimum operating voltage V of the first data unit at the starting position is tested using the binary search method. ccmin-1 ; Set the minimum operating voltage V of the first data unit ccmin-1 The starting test voltage is used as the second adjacent data unit; if the test passes, then V... ccmin-1 V as the second data unit high Based on V high Set the first preset voltage amplitude V step1 If the step voltage decrease test fails within three attempts, the second data unit test will be reset to the current test voltage V. high -0 V step1 Or the current test voltage V high -1 V step1 Or the current test voltage V high -2 V step1 V as the second data unit ccmin-2 If the second data unit passes the test within three attempts, then the binary search method should be used at least within the voltage range [V]. low V high -3 Vstep1 [Find the V that passed the test] ccmin-2 If the test fails, then V ccmin-1 V as the second data unit low Based on V low Set the second preset voltage amplitude V step2 For the step voltage increment test, if it passes the second data unit test within three attempts, the current test voltage V is [value missing]. low +1 V step2 Or the current test voltage V low +2 V step2 Or the current test voltage V low +3 V step2 V as the second data unit ccmin-2 If the second data unit test fails within three attempts, then the binary search method should be used to test at least within the voltage range [V]. low +3 V step2 V high [Find the V that passed the test] ccmin-2 Test the third data unit adjacent to the second data unit according to the preset path sequence, with V ccmin-2 The starting test voltage V is repeatedly acquired as the third data unit. ccmin-2 Steps to find V ccmin-3 Following the above steps, test several data units contained in the memory module according to a preset sequential path. The minimum operating voltage testing method for an on-chip memory module provided by this invention improves testing efficiency and ensures testing accuracy.

[0072] The embodiments of the present invention disclosed above are merely illustrative of the invention. The embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to better understand and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. A method for testing the minimum operating voltage of an on-chip memory module, wherein the chip includes at least one memory module, characterized in that, The storage module can be divided into several data units arranged in an array. These data units undergo minimum operating voltage testing according to a preset sequential path, including: Step 100: Within the preset voltage range [V low V high Within [the specified range], the minimum operating voltage V of the first data unit at the starting position is tested using the binary search method. ccmin-1 ; Step 200: Set the minimum operating voltage V of the first data unit to... ccmin-1 The starting test voltage for the adjacent second data unit; Step 200a: If the test passes, then use V ccmin-1 V, as the second data unit high Based on V high Set the first preset voltage amplitude V step1 If the step voltage decrease test fails within three times, the current test voltage V... high -0 V step1 Or the current test voltage V high -1 V step1 Or the current test voltage V high -2 V step1 V, as the second data unit ccmin-2 If the second data unit passes the test within three attempts, then the binary search method is used to ensure that the voltage range [V] is met. low V high -3 V step1 [Find the V that passed the test] ccmin-2 ; Step 200b: If the test fails, then V ccmin-1 V, as the second data unit low Based on V low Set the second preset voltage amplitude V step2 The step voltage increment test, if passed within three times, indicates that the second data unit test has passed, and the current test voltage V... low +1 V step2 Or the current test voltage V low +2 V step2 Or the current test voltage V low +3 V step2 V, as the second data unit ccmin-2 If the second data unit fails the test within three attempts, then the binary search method should be used to test at least within the voltage range [V]. low +3 V step2 V high [Find the V that passed the test] ccmin-2 ; Step 300: Test the third data unit adjacent to the second data unit according to the preset path sequence, with V ccmin-2 As the starting test voltage of the third data unit, repeat step 200 to find V. ccmin-3 ; Following the steps above, test several data units contained in the storage module in a pre-defined sequential path.

2. The minimum operating voltage test method according to claim 1, characterized in that, The testing method also includes obtaining V values ​​of several data units of the storage module. ccmin-i Let i = 1, 2, ..., M integers, and take Max[V]. ccmin-i [This refers to the minimum operating voltage of the storage module.] 3. The minimum operating voltage test method according to claim 1, characterized in that, The preset sequential path order is the first data unit, the second data unit, and then the i-th data unit.

4. The minimum operating voltage test method according to claim 1, characterized in that, The first preset voltage amplitude V step1 Equal to the second preset voltage amplitude V step2 .

5. The minimum operating voltage test method according to claim 1, characterized in that, The first preset voltage amplitude V step1 With the second preset voltage amplitude V step2 The voltage is set based on the difference in minimum operating voltage between the adjacent data units.

6. The minimum operating voltage test method according to claim 1, characterized in that, Step 200 further includes determining whether the second data unit is in V ccmin-1 Check if the test passed.

7. The minimum operating voltage test method according to claim 1, characterized in that, Step 200a includes the following steps: If the second data unit is in V ccmin-1 The following test passed, V ccmin-1 V, as the second data unit high Based on V high Decrease n times the first preset voltage amplitude V step1 The current test voltage V of the second data unit high -n V step1 ; Determine the second data unit in V high -n V step1 Has the test passed? If the second data unit is in V high -n V step1 The following test failed, so V will be removed. high -(n-1) V step1 The minimum operating voltage V of the second data unit ccmin-2 ; If the second data unit is in V high -n V step1 The test passed; now determine if n equals N. If n equals N, the bisection method is used within the voltage range [V]. low V high -n V step1 [Find the V that passed the test] ccmin-2 ; If n is less than N, let n = n + 1, and return based on V. ccmin-1 Decrease n times the first preset voltage amplitude V step1 The current test voltage V of the second data unit high -n V step1 .

8. The minimum operating voltage test method according to claim 1, characterized in that, Step 200b includes the following steps: If the second data unit is in V ccmin-1 The following test failed, so V will be removed. ccmin-1 V, as the second data unit low Based on V low Increase n first preset voltage amplitudes V step2 The current test voltage V of the second data unit low +n V step2 ; Determine the second data unit in V low +n V step2 Has the test passed? If the second data unit is in V low +n V step2 The following test passed, V low +n V step2 The minimum operating voltage V of the second data unit ccmin-2 ; If the second data unit is in V low +n V step2 If the test fails, determine if n equals N; If n equals N, the bisection method is used within the voltage range [V]. low +n V step2 V high [Find the V that passed the test] ccmin-2 ; If n is less than N, let n = n + 1, and return based on V. ccmin-1 Increase n first preset voltage amplitudes V step2 The current test voltage V of the second data unit low +n V step2 .

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