A process gas nozzle structure for wafer processing and a plasma processing apparatus

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a process gas nozzle structure for wafer processing and a plasma processing equipment, which comprises a metal piece and an ignition piece arranged on a top cover; a sealed cavity in communication with a gas source supply pipeline is arranged in the metal piece, and a plurality of first channels in communication with the sealed cavity and a reaction chamber are arranged through the bottom of the metal piece, so that process gas is input into the reaction chamber after flowing through the sealed cavity; the ignition piece is fixedly inserted into the metal piece and partially extends into the sealed cavity, the ignition piece is connected with a radio frequency power supply to generate an electric field, and the process gas in the sealed cavity is broken down into plasma; the ignition piece is integrated in the sealed cavity of the metal piece, the process gas is directly broken down into plasma by the electric field generated by the ignition piece in the conveying path, and problems such as unstable ignition, ignition delay and frequent parasitic discharge caused by the misplacement of the discharge area and the process gas output area in the traditional separated structure are solved.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and in particular to a process gas nozzle structure for wafer processing and a plasma processing device. Background Technology

[0002] In semiconductor plasma processing equipment, the top ignition structure and the gas inlet structure are usually arranged separately. The ignition head and the process gas outlet are spatially independent, which leads to the misalignment of the discharge area and the gas output area. This can easily cause problems such as unstable ignition, ignition delay, and frequent parasitic discharge. Moreover, the existing structure lacks a constraint design for the ignition electric field, and the discharge is prone to spread to non-target areas. This not only reduces energy utilization efficiency but also damages the cavity components due to abnormal discharge, thus restricting the stability and yield improvement of the plasma processing process. Summary of the Invention

[0003] This invention relates to a process gas nozzle structure for wafer processing, aiming to solve the problems of unstable ignition, parasitic discharge, and low energy utilization caused by the separation of traditional ignition and gas intake structures. By integrating the ignition element into the gas supply sealing cavity, the coupling function of "gas intake is ignition" is realized, the discharge area is constrained, and the stability of plasma generation and process yield are improved.

[0004] To achieve the above objectives, the present invention provides a process gas nozzle structure for wafer processing, comprising a metal component and an ignition component; The metal component is fixedly inserted into the top cover. The interior of the metal component is provided with a sealed cavity that is connected to the gas supply pipeline. The bottom of the metal component is provided with several first channels that connect the sealed cavity and the reaction chamber, so that the process gas flows through the sealed cavity and is then input into the reaction chamber. The ignition element is fixedly inserted into the metal part and extends partially into the sealed cavity. The ignition element is connected to the radio frequency power supply to generate an electric field to break down the process gas in the sealed cavity into plasma.

[0005] Optionally, the process gas nozzle structure for wafer processing further includes a shield, an axial drive component, and a mounting base; The shielding cover is disposed inside the sealed cavity and covers the outside of the portion of the ignition element located inside the sealed cavity; The fixing base is fixed to the outer wall of the shielding cover; The axial drive member is located on the top of the metal part, and its drive end moves through the metal part and extends into the sealed cavity to connect with the fixed seat, so as to drive the shield to move toward or away from the top of the metal part, thereby blocking or exposing the outer side of the part of the ignition member located in the sealed cavity, so as to block or release the contact between the ignition member and the plasma.

[0006] Optionally, the process gas nozzle structure for wafer processing further includes a scraping ring; The scraping ring is located on the top of the shield and extends circumferentially around the outside of the ignition element. The inner ring wall of the scraping ring is slidably disposed with the outer ring side wall of the ignition element, so as to scrape off the byproducts deposited on the outer peripheral side wall of the ignition element as the scraping ring moves close to the top of the metal part with the shield.

[0007] Optionally, the inner top wall of the sealing cavity is recessed with an annular anti-jamming groove extending circumferentially and surrounding the outside of the ignition element. The annular anti-jamming groove is adapted to the scraping ring so that when the top of the shield moves to contact the inner top wall of the sealing cavity, the scraping ring is inserted into the annular anti-jamming groove.

[0008] Optionally, the process gas nozzle structure for wafer processing further includes several elastic connectors. The top of the shield is recessed with a first receiving groove. Part of the scraping ring is movably inserted into the first receiving groove. One end of each elastic connector is fixed to the bottom of the scraping ring, and the other end extends axially and is fixed to the bottom of the first receiving groove.

[0009] Optionally, the shielding cover is provided with a plurality of second channels that radially penetrate the shielding cover and connect the inner cavity of the shielding cover and the sealing cavity. The plurality of second channels are arranged at intervals along the circumference so that the electric field lines generated after the ignition element is connected to the radio frequency power supply pass through the second channels to the sealing cavity to break down the process gas.

[0010] Optionally, the process gas nozzle structure for wafer processing further includes a movable sealing member. The bottom of the first receiving groove is axially recessed with a second receiving groove extending circumferentially. The movable sealing member is at least partially movably inserted into the second receiving groove, and its top extends upward to connect with the bottom of the scraping ring. The movable sealing member is provided with a plurality of third channels that radially penetrate the movable sealing member and are adapted to the second channel. The movable sealing member moves axially downward under the action of the resistance force of the scraping ring inserted into the annular anti-jamming groove, so that each second channel and each third channel are connected in a one-to-one correspondence.

[0011] Optionally, the process gas nozzle structure for wafer processing further includes a quartz sealing element, which is fixed to the end of the second channel away from the ignition element, so as to allow electric field lines to pass through and block plasma from entering the cavity of the shield through the second channel.

[0012] Optionally, the scraping ring includes a contact surface and a scraping cleaning surface. The contact surface is slidably in contact with the ignition element. The scraping cleaning surface is located on the side of the scraping ring facing away from the ignition element and forms an acute angle structure with the contact surface. The scraping cleaning surface is an arc-shaped structure and is curved toward the ignition element.

[0013] Optionally, the second channel is provided with a penetration needle that extends at least partially outside the second channel, the cross-sectional area of ​​the penetration needle decreasing in the direction away from the ignition element, so that the electric field lines extending out of the second channel converge at the end of the penetration needle away from the ignition element.

[0014] To achieve the above objectives, the present invention also provides a plasma processing apparatus, including a reaction chamber, a top cover, a dielectric window, and an induction coil, as well as the aforementioned process gas nozzle structure for wafer processing, wherein the dielectric window is disposed between the top cover and the reaction chamber, and the induction coil is arranged around the outside of the dielectric window.

[0015] The beneficial effects of this invention are as follows: This invention integrates the ignition element into a sealed cavity within a metal component, allowing the process gas to be directly ignited by the electric field generated by the ignition element to form plasma during the delivery path. This solves the problems of unstable ignition, ignition delay, and frequent parasitic discharges caused by the misalignment of the discharge area and the process gas output area in traditional separate structures. At the same time, the discharge area is confined within the target range corresponding to the sealed cavity and the first channel, which not only avoids damage to the reaction chamber from abnormal discharges but also improves the utilization efficiency of electric field energy, ensures the uniformity of plasma output, and effectively improves the stability and yield of wafer plasma processing. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of a plasma processing device in some embodiments of the present invention; Figure 2 for Figure 1 An enlarged schematic diagram of the structure at position A is shown below; Figure 3 for Figure 2 An enlarged schematic diagram of the structure at position B is shown.

[0017] Explanation of reference numerals in the attached figures: 1. Reaction chamber; 2. Top cover; 3. Medium window; 4. Induction coil; 5. Gas supply pipeline; 61. Metal parts; 611. Sealed cavity; 612. First channel; 613. Annular anti-jamming groove; 62. Ignition component; 63. Shielding cover; 631. First receiving groove; 632. Second receiving groove; 633. Second channel; 64. Axial drive component; 65. Fixing base; 7. Scraping ring component; 8. Elastic connector; 9. Movable sealing component; 91. Third channel; 10. Quartz sealing component. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0019] This invention relates to a process gas nozzle structure for wafer processing, aiming to solve the problems of unstable ignition, parasitic discharge, and low energy utilization caused by the separation of traditional ignition and gas intake structures. By integrating the ignition element into the gas supply sealing cavity, the coupling function of "gas intake is ignition" is realized, the discharge area is constrained, and the stability of plasma generation and process yield are improved.

[0020] To address the problems existing in the prior art, embodiments of the present invention provide a process gas nozzle structure for wafer processing, such as... Figure 1 and Figure 2 As shown, the process gas nozzle structure for wafer processing includes a metal component 61 and an ignition component 62. The metal component 61 and the ignition component 62 are preferably cylindrical, but are not limited to cylindrical shapes.

[0021] In some embodiments, such as Figure 2 As shown, the metal part 61 is fixedly inserted into the top cover 2, preferably vertically inserted into the top cover 2; the interior of the metal part 61 is provided with a sealed cavity 611 communicating with the gas supply pipeline 5, and the cavity of the sealed cavity 611 is preferably, but not limited to, cylindrical; and the bottom of the metal part 61 is provided with a plurality of first channels 612 communicating with the sealed cavity 611 and the reaction chamber 1, so that the process gas flows through the sealed cavity 611 and is then input into the reaction chamber 1; the plurality of first channels 612 are arranged in a matrix, but not limited to, at the bottom of the metal part 61.

[0022] In some embodiments, such as Figure 2 As shown, the ignition element 62 is fixedly inserted into the metal part 61 and partially extends into the sealed cavity 611. The ignition element 62 is connected to the radio frequency power supply to generate an electric field to break down the process gas in the sealed cavity 611 into plasma.

[0023] Extending the ignition element 62 directly into the sealed cavity 611 ensures that the electric field generation location completely coincides with the gas delivery path. This eliminates the spatial misalignment between the ignition zone and the gas supply zone in traditional separate structures, significantly shortens the path of the process gas from intake to breakdown, and effectively solves the problems of ignition time delay and unstable ignition. On the other hand, the electric field is naturally confined within the sealed cavity 611 and the subsequent first channel 612, preventing parasitic discharges caused by the electric field spreading to non-target areas. This not only improves the utilization rate of radio frequency energy but also reduces the damage of abnormal discharges to the reaction chamber 1, ensuring the uniformity of plasma output.

[0024] In some embodiments, such as Figure 2 As shown, the process gas nozzle structure for wafer processing also includes a shield 63, an axial drive component 64, and a mounting base 65. The shield 63 is not limited to a cylindrical structure. The mounting base 65 is not limited to a rectangular block structure. The axial drive component 64 is not limited to a miniature cylinder.

[0025] In some embodiments, such as Figure 2 As shown, the shield 63 is disposed inside the sealed cavity 611 and covers the outside of the portion of the ignition element 62 located inside the sealed cavity 611; it should be noted that the axial depth of the inner cavity of the shield 63 is greater than the axial height of the portion of the ignition element 62 located inside the sealed cavity 611.

[0026] In some embodiments, such as Figure 2 As shown, the fixing base 65 is fixed to the outer wall of the shield 63; the axial drive member 64 is disposed on the top of the metal part 61, and its drive end moves through the metal part 61 and extends into the sealed cavity 611 to connect with the fixing base 65, so as to drive the shield 63 to move toward or away from the top of the metal part 61, thereby blocking or exposing the outer side of the part of the ignition member 62 located in the sealed cavity 611, so as to block or release the blockage of the contact between the ignition member 62 and the plasma.

[0027] The position of the shield 63 is adjusted by the axial drive component 64. During non-working periods, the shield 63 is moved upward to completely cover the part of the ignition component 62 located in the sealed cavity 611, blocking direct contact between the plasma and the surface of the ignition component 62, thereby avoiding the deposition of process by-products on the outer wall of the ignition component 62 and causing discharge performance degradation. During the ignition working period, the shield 63 is moved downward to expose the ignition component 62, ensuring that the electric field diffuses outward normally to break down the gas. This achieves dynamic switching of the ignition component 62 from "exposed in working state to protected in idle state", which not only extends the service life of the ignition component 62 and reduces the cost of frequent downtime maintenance, but also does not affect the normal plasma generation efficiency, thus taking into account both device durability and process stability.

[0028] It is worth noting that the ignition element 62 can be continuously powered during the lifting and lowering of the shielding cover 63, which can be understood as being powered during both the protection and ignition stages; or it can be powered intermittently, for example, when the shielding cover 63 moves down to expose the ignition element 62 and prepares to enter the working state, the radio frequency power supply can be turned on in advance to ensure that the ignition element 62 can quickly ignite and work the moment it reaches the preset position, eliminating the ignition delay; while during the protection stage when the shielding cover 63 moves up to cover the ignition element 62, the power supply is cut off, which avoids the loss of the ignition element 62 due to ineffective power consumption and no-load discharge, and also prevents abnormal arcing when the shielding cover 63 is not fully closed, further matching the energy-saving protection logic of "discharge in working state and power off in idle state", improving operational safety and energy economy.

[0029] In some embodiments, such as Figure 2 and Figure 3 As shown, the process gas nozzle structure for wafer processing also includes a scraping ring 7; the shape of the scraping ring 7 may be, but is not limited to, a ring structure.

[0030] In some embodiments, such as Figure 2 and Figure 3 As shown, the scraping ring 7 is disposed on the top of the shield 63 and extends circumferentially around the outside of the ignition element 62. The inner ring wall of the scraping ring 7 is slidably disposed with the outer ring side wall of the ignition element 62, so as to scrape off the by-products deposited on the outer peripheral side wall of the ignition element 62 when the scraping ring 7 moves with the shield 63 close to the top of the metal part 61.

[0031] This embodiment links the movement of the scraping ring 7 and the shielding cover 63, eliminating the need for additional drive structures. Relying solely on the inherent upward movement of the shielding cover 63, the sliding arrangement between the inner ring wall and the outer peripheral wall of the ignition element 62 automatically scrapes away polymer and other byproducts deposited on the ignition element 62 during the process. This avoids the problems of uneven discharge, creepage breakdown, or even failure of the ignition element 62 caused by the accumulation of byproducts. Simultaneously, the scraping action and the protective action of the shielding cover 63 are completed synchronously, cleaning the surface of the ignition element 62 in real time before each time it enters the idle protective state. No additional downtime maintenance is required, which not only ensures the discharge stability of the ignition element 62 during long-term operation but also simplifies the equipment structure, reduces operation and maintenance costs, and achieves an integrated effect of "protection and self-cleaning".

[0032] In some embodiments, such as Figure 3As shown, the inner top wall of the sealing cavity 611 is recessed with an annular anti-jamming groove 613 extending circumferentially and surrounding the outer side of the ignition element 62. The groove shape of the annular anti-jamming groove 613 is preferably an annular structure. The annular anti-jamming groove 613 is adapted to the scraping ring 7, which can be understood as the shape of the groove of the annular anti-jamming groove 613 being consistent with the shape of the scraping ring 7. So that when the top of the shield 63 moves to contact the inner top wall of the sealing cavity 611, the scraping ring 7 is inserted into the annular anti-jamming groove 613.

[0033] By utilizing the shape-fitting design of the annular anti-jamming groove 613 and the scraping ring 7, when the shield 63 moves up to the top and fits against the inner top wall of the sealing cavity 611, the scraping ring 7 can be precisely embedded in the annular anti-jamming groove 613. On the one hand, it can collect the by-products scraped off from the side wall of the ignition element 62 by the scraping ring 7 in the groove of the annular anti-jamming groove 613, preventing the falling debris from falling into the reaction chamber 1 below and contaminating the wafer, while preventing by-products from scattering in the sealing cavity 611 and interfering with the airflow uniformity. On the other hand, the annular anti-jamming groove 613 provides axial limiting space for the scraping ring 7, ensuring that the scraping ring 7 and the ignition element 62 maintain coaxiality, avoiding cleaning dead corners caused by the displacement of the scraping ring 7 after long-term use, and further improving the reliability of the self-cleaning action and the cleanliness of the chamber. At the same time, it can also prevent the top of the ignition element 62 from failing to contact the inner top wall of the sealing cavity 611 due to the top of the scraping ring 7 abutting against the inner top wall of the sealing cavity 611.

[0034] In some embodiments, such as Figure 2 and Figure 3 As shown, the wafer processing process gas nozzle structure also includes several elastic connectors 8. A first receiving groove 631 is recessed at the top of the shielding cover 63, and a portion of the scraping ring 7 is movably inserted into the first receiving groove 631. One end of each elastic connector 8 is fixed to the bottom of the scraping ring 7, and the other end extends axially and is fixed to the bottom of the first receiving groove 631. Preferably, the structure of the elastic connector 8 may be, but is not limited to, a spring.

[0035] The scraping ring 7 is movably inserted into the first receiving groove 631 and equipped with an elastic connector 8, which gives the scraping ring 7 a slight axial floating capability. On the one hand, it can adaptively compensate for the manufacturing and assembly tolerances between the scraping ring 7 and the ignition element 62, ensuring that the inner ring wall always fits against the outer peripheral wall of the ignition element 62, avoiding eccentric jamming caused by rigid connection. On the other hand, when the scraping ring 7 is embedded in the annular anti-jamming groove 613, the elastic connector 8 can provide flexible buffering force, ensuring that the scraping ring 7 is in close contact with the bottom of the annular anti-jamming groove 613 to improve the by-product collection effect, and absorbing the impact load on the top when the shield 63 moves upward, preventing hard contact damage to the ignition element 62 or the scraping ring 7, thus taking into account both the thoroughness of cleaning and the safety of the structure.

[0036] In some embodiments, a plurality of the elastic connectors 8 are arranged in two concentric annular structures with different radii, and multiple elastic connectors 8 are arranged at equal intervals along the circumference within the same annular structure.

[0037] The design employs a double concentric ring structure, with elastic connectors 8 arranged at equal intervals along the circumference within the same ring structure. This allows for balanced force application to the scraping ring 7 from multiple points. On one hand, the double ring structure expands the range of force support, effectively suppressing the tilting and swaying of the scraping ring 7 during axial floating, ensuring it remains coaxial with the ignition element 62 and avoiding cleaning dead zones caused by single-sided gaps. On the other hand, the evenly distributed layout along the circumference within the same ring structure ensures uniform distribution of elastic resistance and support forces, preventing deformation of the scraping ring 7 caused by localized stress concentration. It also provides a stable and consistent buffer force when the scraping ring 7 is embedded in the annular anti-jamming groove 613, further enhancing the reliability of by-product collection and the stability of structural operation.

[0038] In some embodiments, such as Figure 3 As shown, the shielding cover 63 is provided with a plurality of second channels 633 that radially penetrate the shielding cover 63 and connect the inner cavity of the shielding cover 63 and the sealing cavity 611. The plurality of second channels 633 are arranged at intervals along the circumference, preferably at equal intervals, so that the electric field lines generated after the ignition element 62 is connected to the radio frequency power supply pass through the second channels 633 to the sealing cavity 611 to break down the process gas.

[0039] By opening circumferentially spaced second channels 633 on the shield 63, a uniform and stable diffusion path for the electric field lines can be provided when the ignition element 62 is covered by the shield 63. On the one hand, this avoids the problem of electric field leakage and ignition failure caused by the complete sealing of the shield 63, ensuring that the electric field generated by the ignition element 62 can penetrate uniformly into the process gas in the sealed cavity 611, maintaining the uniformity of plasma generation. On the other hand, the circumferentially distributed layout of multiple second channels 633 can make the electric field lines symmetrically distributed in the sealed cavity 611, avoiding parasitic arcs caused by single-point discharge or excessively strong local electric fields. At the same time, in conjunction with the shielding effect of the shield 63, the discharge area is strictly confined to the sealed cavity 611 area corresponding to the second channel 633, which not only ensures the stability of the initial ignition stage, but also further reduces the risk of damage to the cavity components by abnormal discharge.

[0040] It should be understood that in this embodiment, as long as the ignition element 62 is energized, the electric field lines will pass through the second channel 633 and enter the sealed cavity 611.

[0041] In some embodiments, a plurality of second channels 633 are provided on the same circumferential line at the same axial height; a plurality of second channels 633 may also be provided at different axial heights; the multi-axial layered arrangement of second channels 633 on the same circumferential line can further expand the three-dimensional diffusion range of the electric field lines. On the one hand, it breaks the limitation of discharge at a single axial height, so that the process gas at different axial positions of the sealed cavity 611 can receive sufficient electric field lines, avoid the occurrence of discharge blind zones in the process gas flow path, and significantly improve the uniformity and continuity of plasma generation in the entire sealed cavity 611; on the other hand, the diversion effect of the multi-layered channels can reduce the electric field load of a single channel, reduce the risk of abnormal arcing caused by excessive concentration of local electric field, and at the same time, with the circumferentially uniform layout, a three-dimensional discharge field of "circumferentially uniform and axially layered" is formed in the sealed cavity 611, which is more suitable for the breakdown requirements of high flow rate and high uniformity process gas, and takes into account both discharge stability and process adaptability.

[0042] In some embodiments, such as Figure 3 As shown, the process gas nozzle structure for wafer processing also includes a movable sealing member 9. The bottom of the first receiving groove 631 is axially recessed with a second receiving groove 632 extending circumferentially. Preferably, the cavity of the second receiving groove 632 is annular. The movable sealing member 9 is at least partially movably inserted into the second receiving groove 632, and its top extends upward to connect with the bottom of the scraping ring 7. The movable sealing member 9 is provided with a plurality of third channels 91 that radially penetrate the movable sealing member 9 and are adapted to the second channel 633. It can be understood that the second channel 633 and the third channel 91 are arranged on the same radial line, but at different axial heights.

[0043] In some embodiments, such as Figure 3 As shown, the movable sealing member 9 moves axially downward under the action of the resistance force of the scraping ring member 7 inserted in the annular anti-jamming groove 613, so that each of the second channels 633 and each of the third channels 91 are connected in a one-to-one correspondence.

[0044] This embodiment relies on the inherent action of the shield 63 moving upward to the inner top wall of the sealing cavity 611 to convert the axial resistance of the scraping ring 7 embedded in the annular anti-jamming groove 613 into the downward driving force of the movable sealing member 9. This achieves automatic alignment and connection between the second channel 633 and the third channel 91 without the need for an additional power source: when the shield 63 moves upward to the inner top wall of the sealing cavity 611 and the scraping ring 7 is pressed (which can be understood as being resisted by the top wall of the annular anti-jamming groove 613) and moves downward, the movable sealing member 9 moves downward synchronously, causing the third channel 91, which was originally at a different axial height, to connect with the second channel 633. Channels 633 are precisely aligned along the same radial line, allowing electric field lines to smoothly penetrate into the sealed cavity 611 and break down the gas. When the shield 63 moves downward to reset and the resistance disappears, the elastic connector 8 drives the scraping ring 7 and the movable sealing component 9 to move upward and reset synchronously. The third channel 91 and the second channel 633 are misaligned and sealed again. The entire process relies on mechanical linkage to achieve adaptive switching between "protective state conduction and working state sealing". This simplifies the control logic and completes multiple functions such as self-cleaning, by-product collection and discharge channel opening and closing using the same action, significantly improving the structural integration and operational reliability.

[0045] Even in a fully protected state, where the top of the shield 63 is in contact with the top wall of the sealed cavity 611 and the ignition element 62 is completely covered, the discharge path can still be opened through mechanical linkage. This ensures that when the ignition element 62 is energized, the electric field can smoothly penetrate the shield 63 and act on the process gas in the sealed cavity 611, achieving stable discharge ignition. Specifically, when the shield 63 moves up to contact the top wall of the sealed cavity 611, the scraping ring 7 is squeezed by the annular anti-jamming groove 613, causing the movable sealing part 9 to move down. This allows the third channel 91 to be precisely aligned and connected with the second channel 633, opening up the only electric field penetration path for the ignition element 62 enclosed by the shield 63. This retains the physical protection function of the shield 63 for the ignition element 62 while breaking through the limitation that "shielding means power failure and no ignition." This allows the equipment to quickly perform pre-ignition or maintain weak discharge operation during the idle protection phase, significantly shortening the ignition response time during process switching and balancing the device protection requirements with the timeliness of process response.

[0046] In some embodiments, the number of the third channel 91 and the second channel 633 are the same, and their positions are adapted, which will not be described in detail here.

[0047] In some embodiments, such as Figure 3As shown, the process gas nozzle structure for wafer processing also includes a quartz sealing element 10, which is fixed to the end of the second channel 633 away from the ignition element 62, so as to allow electric field lines to pass through and block plasma from entering the cavity of the shield 63 through the second channel 633.

[0048] A quartz sealing element 10 is fixed at the end of the second channel 633, which is far from the ignition element 62. This fully utilizes the excellent dielectric transparency of quartz to form a dense physical barrier without hindering the penetration of electric field lines. This completely blocks the reverse diffusion path of plasma through the second channel 633 into the inner cavity of the shield 63. This avoids the high-temperature plasma from burning the inner wall of the shield 63 or contaminating the surface of the ignition element 62, preventing the insulation performance of the ignition element 62 from deteriorating and causing abnormal discharge. It also eliminates problems such as abnormal arcing and carbon buildup caused by plasma stagnation in the channel. At the same time, the chemical inertness and high-temperature resistance of quartz make it less prone to corrosion and degeneration in the long-term plasma environment, further ensuring the long-term stability and cleanliness of the discharge channel. This perfectly matches the operating logic of "conducting discharge in the protective state and blocking backflow in the working state".

[0049] In some embodiments, the quartz sealing element 10 can be a columnar structure adapted to the cross-section of the second channel 633, with its outer diameter interfering with the inner wall of the second channel 633 to achieve airtightness. Alternatively, it can be designed as a hemispherical or arc-shaped dome structure protruding towards the sealing cavity 611, using a streamlined outer surface to reduce the flow resistance and turbulence of the process gas, and to prevent the process gas from forming a stagnant area at the channel opening. At the same time, its side facing the ignition element 62 can be set as a flat or slightly concave energy-receiving surface to ensure the uniformity of electric field line penetration.

[0050] In some embodiments, such as Figure 3 As shown, the scraping ring 7 includes a contact surface and a scraping cleaning surface. The contact surface is slidably contacted with the ignition element 62. The scraping cleaning surface is located on the side of the scraping ring 7 facing away from the ignition element 62 and forms an acute angle structure with the contact surface. The scraping cleaning surface is an arc-shaped structure and is curved toward the ignition element 62.

[0051] The contact surface of the scraping ring 7 is at an acute angle to the scraping cleaning surface, and the scraping cleaning surface is an arc-shaped structure that curves toward the ignition element 62, which can form a highly efficient cleaning edge similar to a "scraper": on the one hand, the acute angle intersection structure can greatly improve the scraping force on the by-products on the surface of the ignition element 62, and with the guiding effect of the arc-shaped surface, the scraped by-products can be collected in the annular anti-jamming groove 613 away from the ignition element 62, preventing debris from falling into the sealing cavity 611 or the reaction chamber 1; on the other hand, the arc-shaped surface and the outer wall of the ignition element 62 form a small gap fit, which can generate micro-turbulence during the sliding process, further peeling off the deposits with strong adhesion.

[0052] In some embodiments, the second channel 633 is provided with a penetration needle (not shown) that extends at least partially outside the second channel 633. The cross-sectional area of ​​the penetration needle decreases in the direction away from the ignition element 62, so that electric field lines extending out of the second channel 633 converge at the end of the penetration needle away from the ignition element 62.

[0053] A breakdown needle with a decreasing cross-sectional area is installed in the second channel 633 in the direction away from the ignition element 62. The electric field lines exiting the second channel 633 can be highly concentrated at the distal end of the breakdown needle by utilizing the tip discharge effect. On the one hand, the local electric field strength is greatly enhanced, and the process gas in the sealed cavity 611 can be broken down quickly and stably even under low power conditions, effectively solving the problems of ignition delay and unstable ignition. On the other hand, the electric field is anchored in a very small area at the end of the breakdown needle, which further constrains the discharge range and avoids parasitic arcs caused by the electric field spreading to non-target areas. At the same time, with the blocking effect of the quartz sealing element 10, the efficiency and controllability of plasma generation are improved, and the damage of abnormal discharge to the cavity components is reduced. It is especially suitable for the requirements of low-pressure and high-uniformity precision wafer processing processes.

[0054] In some embodiments, the number of the puncture needles may be the same as or different from the number of the second channels 633.

[0055] To address the problems existing in the prior art, embodiments of the present invention also provide a plasma processing device, such as... Figure 1 As shown, the plasma processing equipment includes a reaction chamber 1, a top cover 2, a dielectric window 3, and an induction coil 4, as well as the process gas nozzle structure for wafer processing. The dielectric window 3 is located between the top cover 2 and the reaction chamber 1, and the induction coil 4 is arranged around the dielectric window 3.

[0056] In some embodiments, the plasma processing equipment can be a plasma etching equipment, a photoresist stripping equipment, or a deposition equipment. Because the nozzle structure of this application integrates multiple advantages such as "instant ignition upon gas intake," self-cleaning protection, and precise constraint of the discharge area, it can directly adapt to the needs of different process scenarios: in etching equipment, it can ensure the uniformity of plasma concentration of the etching gas, improving the etching rate and pattern accuracy; in photoresist stripping equipment, it can achieve rapid and stable ignition of photoresist stripping gases such as oxygen, improving photoresist removal efficiency and reducing residue; in deposition equipment, it can ensure sufficient plasma decomposition of the reaction precursor gas, improving the density and uniformity of thin film deposition. There is no need to adjust the core nozzle structure for different equipment, significantly improving the versatility and process adaptability of this solution.

[0057] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A process gas nozzle structure for wafer processing, characterized in that, Includes metal parts and ignition components; The metal component is fixedly inserted into the top cover. The interior of the metal component is provided with a sealed cavity that is connected to the gas supply pipeline. The bottom of the metal component is provided with several first channels that connect the sealed cavity and the reaction chamber, so that the process gas flows through the sealed cavity and is then input into the reaction chamber. The ignition element is fixedly inserted into the metal part and extends partially into the sealed cavity. The ignition element is connected to the radio frequency power supply to generate an electric field to break down the process gas in the sealed cavity into plasma.

2. The wafer processing gas nozzle structure according to claim 1, characterized in that, It also includes a shielding cover, an axial drive component, and a mounting base; The shielding cover is disposed inside the sealed cavity and covers the outside of the portion of the ignition element located inside the sealed cavity; The fixing base is fixed to the outer wall of the shielding cover; The axial drive member is located on the top of the metal part, and its drive end moves through the metal part and extends into the sealed cavity to connect with the fixed seat, so as to drive the shield to move toward or away from the top of the metal part, thereby blocking or exposing the outer side of the part of the ignition member located in the sealed cavity, so as to block or release the contact between the ignition member and the plasma.

3. The wafer processing gas nozzle structure according to claim 2, characterized in that, It also includes scraping rings; The scraping ring is located on the top of the shield and extends circumferentially around the outside of the ignition element. The inner ring wall of the scraping ring is slidably disposed with the outer ring side wall of the ignition element, so as to scrape off the byproducts deposited on the outer peripheral side wall of the ignition element as the scraping ring moves close to the top of the metal part with the shield.

4. The wafer processing gas nozzle structure according to claim 3, characterized in that, The inner top wall of the sealed cavity is recessed with an annular anti-jamming groove that extends circumferentially and is arranged around the outside of the ignition element. The annular anti-jamming groove is adapted to the scraping ring so that when the top of the shield moves to contact the inner top wall of the sealed cavity, the scraping ring is inserted into the annular anti-jamming groove.

5. The wafer processing gas nozzle structure according to claim 4, characterized in that, It also includes several elastic connectors. The top of the shield is recessed with a first receiving groove. Part of the scraping ring is movably inserted into the first receiving groove. One end of each elastic connector is fixed to the bottom of the scraping ring, and the other end extends axially and is fixed to the bottom of the first receiving groove.

6. The wafer processing gas nozzle structure according to claim 5, characterized in that, The shielding cover is provided with a plurality of second channels that radially penetrate the shielding cover and connect the inner cavity of the shielding cover and the sealed cavity. The plurality of second channels are arranged at intervals along the circumference so that the electric field lines generated after the ignition element is connected to the radio frequency power supply pass through the second channels to the sealed cavity to break down the process gas.

7. The wafer processing gas nozzle structure according to claim 6, characterized in that, It also includes a movable sealing member. The bottom of the first receiving groove is axially recessed with a second receiving groove extending circumferentially. The movable sealing member is at least partially movably inserted into the second receiving groove, and its top extends upward to connect with the bottom of the scraping ring. The movable sealing member is provided with a plurality of third channels that radially penetrate the movable sealing member and are adapted to the second channel. The movable sealing member moves axially downward under the action of the resistance force of the scraping ring inserted into the annular anti-jamming groove, so that each second channel and each third channel are connected in a one-to-one correspondence.

8. The wafer processing gas nozzle structure according to claim 6, characterized in that, It also includes a quartz sealing element, which is fixed to the end of the second channel away from the ignition element, so as to allow the electric field lines to pass through and block the plasma from entering the cavity of the shield through the second channel.

9. The wafer processing gas nozzle structure according to claim 3, characterized in that, The scraping ring includes a contact surface and a scraping cleaning surface. The contact surface is slidably in contact with the ignition element. The scraping cleaning surface is located on the side of the scraping ring facing away from the ignition element and forms an acute angle structure with the contact surface. The scraping cleaning surface is an arc-shaped structure and is curved toward the ignition element.

10. The wafer processing gas nozzle structure according to claim 6, characterized in that, The second channel is provided with a penetration needle that extends at least partially outside the second channel. The cross-sectional area of ​​the penetration needle decreases in the direction away from the ignition element, so that the electric field lines extending out of the second channel converge at the end of the penetration needle away from the ignition element.

11. A plasma processing device, characterized in that, The device includes a reaction chamber, a top cover, a dielectric window, and an induction coil, as well as a process gas nozzle structure for wafer processing as described in any one of claims 1 to 10, wherein the dielectric window is disposed between the top cover and the reaction chamber, and the induction coil is arranged around the dielectric window.

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