A full duplex on-chip antenna and wireless communication device

Abstract

The application discloses a full-duplex on-chip antenna and wireless communication equipment, and relates to the technical field of wireless communication equipment, in particular to a full-duplex on-chip antenna and wireless communication equipment. The full-duplex on-chip antenna comprises a substrate layer, a chip metal layer, a dielectric layer and an antenna radiation layer; the chip metal layer comprises a ground layer and an antenna feed layer; the ground layer is located on one side of the substrate layer, and the antenna feed layer is located on the side of the ground layer away from the substrate layer; the antenna feed layer is used for receiving, transmitting and emitting electromagnetic signals; the ground layer is used for isolating the substrate layer from the antenna radiation layer; the dielectric layer is located on the side of the antenna feed layer away from the substrate layer and is used for coupling the energy of electromagnetic signals to the antenna radiation layer and coupling the energy of electromagnetic signals from the antenna radiation layer; and the antenna radiation layer is located on the side of the dielectric layer away from the substrate layer and is used for radiating or receiving electromagnetic signals outwardly. The antenna feed layer is arranged between the dielectric layer and the ground layer, the effective dielectric layer thickness of the on-chip antenna can be increased, and the radiation efficiency and gain performance of the on-chip antenna can be improved by isolating the substrate layer from the antenna radiation layer through the ground layer.

Description

Technical Field

[0001] This invention relates to the field of millimeter-wave antenna technology, and more particularly to a full-duplex on-chip antenna and wireless communication device. Background Technology

[0002] In recent years, with the rapid development of applications such as wireless communication, intelligent sensing, autonomous driving, augmented reality / virtual reality, and the Internet of Things, systems have placed higher demands on the data rate, capacity, real-time performance, and integration of wireless links. To acquire richer spectrum resources, communication and sensing systems are gradually expanding into millimeter-wave and even higher frequency bands. At the same time, continuous advancements in semiconductor technology have made it possible to integrate functional modules such as digital circuits, analog circuits, RF front-ends, and antennas onto a single chip as a system-on-a-chip (SoC), making millimeter-wave fully integrated systems an important development direction.

[0003] In full-duplex systems, because the transmitted and received signals coexist, the high-power signal at the transmitting end is easily leaked to the receiving end through spatial coupling, surface wave propagation, substrate coupling, and feeder leakage, resulting in strong self-interference and severely affecting the normal reception of the desired signal. For millimeter-wave on-chip fully integrated full-duplex systems, since the antenna and RF circuitry are integrated on the same substrate, the electromagnetic coupling between the transmitting and receiving structures is even more significant. Simultaneously, the substrate typically has a high dielectric constant and low resistivity, which easily induces surface wave propagation and multipath coupling, exacerbating the self-interference problem. Summary of the Invention

[0004] This invention provides a full-duplex on-chip antenna and a wireless communication device. By setting the antenna feed layer between the dielectric layer and the ground layer, the effective dielectric layer thickness of the antenna can be increased. Furthermore, by isolating the substrate layer and the antenna radiating layer through the ground layer, the radiation efficiency and gain performance of the on-chip antenna can be improved.

[0005] In a first aspect, embodiments of the present invention provide a full-duplex on-chip antenna, comprising: a substrate layer, a chip metal layer, a dielectric layer, and an antenna radiating layer; The chip metal layer includes a ground layer and an antenna feed layer; the ground layer is located on one side of the substrate layer, and the antenna feed layer is located on the side of the ground layer away from the substrate layer; the antenna feed layer is used to receive, transmit, and emit electromagnetic signals; the ground layer is used to isolate the substrate layer from the antenna radiating layer; The dielectric layer is located on the side of the antenna feed layer away from the substrate layer, and is used to couple the energy of the electromagnetic signal to the antenna radiating layer and to couple the energy of the electromagnetic signal from the antenna radiating layer. The antenna radiating layer is located on the side of the dielectric layer away from the substrate layer, and is used to radiate or receive the electromagnetic signals.

[0006] Optionally, the antenna radiating layer includes a hollow cylindrical radiating structure.

[0007] Optionally, the hollow cylindrical radiating structure includes a radiating body and a central through hole located inside the radiating body; The orthographic projection of the outer contour of the radiating body onto the substrate is a first rectangle, and the orthographic projection of the inner contour of the radiating body onto the substrate is a second rectangle, wherein the geometric center of the first rectangle coincides with the geometric center of the second rectangle.

[0008] Optionally, the antenna feed layer includes a transmit feed network and a receive feed network; the receive feed network includes a first signal receiving unit and a second signal receiving unit; The radiation body includes a first radiation section, a second radiation section, a third radiation section, and a fourth radiation section connected together. The first and third radiating portions both extend along a first direction, and the second and fourth radiating portions both extend along a second direction; the second direction intersects with the first direction. The orthographic projection of the first radiating distribution on the substrate overlaps with the orthographic projection of the emitting feed network on the substrate; The orthographic projection of the second radiation distribution on the substrate overlaps with the orthographic projection of the first signal receiving unit on the substrate; The orthographic projection of the fourth radiation distribution on the substrate overlaps with the orthographic projection of the second signal receiving unit on the substrate.

[0009] Optionally, the transmitting feed network includes a single-ended port, a first signal transmission line, a first open-circuit transmission line, and a first transmission line stub; the single-ended port is used to receive the electromagnetic signal; one end of the first signal transmission line is connected to the single-ended port, and the other end of the first signal transmission line is connected to the first open-circuit transmission line; the first open-circuit transmission line is used for magnetoelectric coupling with the hollow cylindrical radiating structure; the first open-circuit transmission line is connected to the grounding layer through the first transmission line stub. The first signal receiving unit includes a second open-circuit transmission line, a second signal transmission line, a first differential port, and a second transmission line stub; the second open-circuit transmission line is used for magneto-electric coupling with the hollow cylindrical radiating structure; one end of the second signal transmission line is connected to the first differential port, and the other end of the second signal transmission line is connected to the second open-circuit transmission line; the first differential port is used to receive a first radio frequency signal, and the second open-circuit transmission line is connected to the ground layer through the second transmission line stub; The second signal receiving unit includes a third open-circuit transmission line, a third signal transmission line, a second differential port, and a third transmission line stub; the third open-circuit transmission line is used for magneto-electric coupling with the hollow cylindrical radiating structure; one end of the third signal transmission line is connected to the second differential port, and the other end of the third signal transmission line is connected to the third open-circuit transmission line; the second differential port is used to receive a second radio frequency signal, and the third open-circuit transmission line is connected to the ground layer through the third transmission line stub.

[0010] Optionally, the first transmission line stub includes a first sub-transmission line stub and a second sub-transmission line stub; the first open-circuit transmission line includes a first open-circuit microstrip line and a first short-circuit microstrip stub and a second short-circuit microstrip stub located on the same side of the first open-circuit microstrip line; one end of the first short-circuit microstrip stub is connected to the first open-circuit microstrip line, and the other end of the first short-circuit microstrip stub is connected to the ground layer through the first sub-transmission line stub; one end of the second short-circuit microstrip stub is connected to the first open-circuit microstrip line, and the other end of the second short-circuit microstrip stub is connected to the ground layer through the second sub-transmission line stub; the orthographic projection of the first radiation distribution on the substrate layer overlaps with the orthographic projection of the first open-circuit microstrip line on the substrate layer; The second transmission line stub includes a third sub-transmission line stub and a fourth sub-transmission line stub; the second open-circuit transmission line includes a second open-circuit microstrip line and a third short-circuit microstrip stub and a fourth short-circuit microstrip stub located on the same side of the second open-circuit microstrip line; one end of the third short-circuit microstrip stub is connected to the second open-circuit microstrip line, and the other end of the third short-circuit microstrip stub is connected to the ground plane through the third sub-transmission line stub; one end of the fourth short-circuit microstrip stub is connected to the second open-circuit microstrip line, and the other end of the fourth short-circuit microstrip stub is connected to the ground plane through the fourth sub-transmission line stub; the orthographic projection of the second radiating portion on the substrate overlaps with the orthographic projection of the second open-circuit microstrip line on the substrate, the orthographic projection of the third radiating portion on the substrate overlaps with the orthographic projection of a portion of the second signal transmission line on the substrate, and the orthographic projection of the central via on the substrate covers the orthographic projections of the third short-circuit microstrip stub and the fourth short-circuit microstrip stub on the substrate; The third transmission line stub includes a fifth sub-transmission line stub and a sixth sub-transmission line stub; the third open-circuit transmission line includes a third open-circuit microstrip line and a fifth short-circuit microstrip stub and a sixth short-circuit microstrip stub located on the same side of the third open-circuit microstrip line; one end of the fifth short-circuit microstrip stub is connected to the third open-circuit microstrip line, and the other end of the fifth short-circuit microstrip stub is connected to the ground layer through the fifth sub-transmission line stub; one end of the sixth short-circuit microstrip stub is connected to the third open-circuit microstrip line, and the sixth short-circuit microstrip stub... The other end is connected to the ground layer via the sixth sub-transmission line stub; the orthographic projection of the fourth radiating portion on the substrate layer overlaps with the orthographic projection of the third open-circuit microstrip line on the substrate layer, the orthographic projection of the fourth radiating portion on the substrate layer overlaps with the orthographic projection of a portion of the third signal transmission line on the substrate layer, and the orthographic projection of the central via on the substrate layer covers the orthographic projection of the fifth short-circuit microstrip stub on the substrate layer and the orthographic projection of the sixth short-circuit microstrip stub on the substrate layer.

[0011] Optionally, the first open-circuit transmission line is symmetrical about a first axis of symmetry, and the first axis of symmetry extends along the second direction; The first signal receiving unit and the second signal receiving unit are symmetrical about the first axis of symmetry. Both the second open-circuit transmission line and the third open-circuit transmission line are symmetrical about a second axis of symmetry; the second axis of symmetry extends along the first direction.

[0012] Optionally, the angle between the first axis of symmetry and the second axis of symmetry is a right angle; Both the first axis of symmetry and the second axis of symmetry pass through the geometric center of the first rectangle.

[0013] Optionally, the second signal transmission line includes a first transmission portion and a second transmission portion connected together; the first transmission portion includes a first sub-connection portion extending along the first direction and a second sub-connection portion extending along the second direction; the second transmission portion extends along the second direction; the orthographic projection of the central via on the substrate layer covers the orthographic projection of the first transmission portion on the substrate layer, and the orthographic projection of the third radiation portion on the substrate layer overlaps with the orthographic projection of the second transmission portion on the substrate layer; The third signal transmission line includes a third transmission portion and a fourth transmission portion connected together; the third transmission portion includes a third sub-transmission portion extending along the first direction and a fourth sub-transmission portion extending along the second direction, the fourth transmission portion extending along the second direction; the orthographic projection of the central via on the substrate layer covers the orthographic projection of the third transmission portion on the substrate layer, and the orthographic projection of the third radiation portion on the substrate layer overlaps with the orthographic projection of the fourth transmission portion on the substrate layer.

[0014] Secondly, embodiments of the present invention also provide a wireless communication device, including the full-duplex on-chip antenna described in any of the first aspects.

[0015] The technical solution provided by this invention provides a full-duplex on-chip antenna comprising a substrate layer, a chip metal layer, a dielectric layer, and an antenna radiating layer stacked together. This full-duplex on-chip antenna transmits, transmits, and receives signals through electromagnetic coupling between the antenna radiating layer above the dielectric layer and an open-circuit transmission line with the antenna feed layer. The substrate layer serves as the base of the full-duplex on-chip antenna, supporting and carrying the overlying film layers. A ground layer is located on the upper surface of the substrate layer, the antenna feed layer is located on the upper surface of the ground layer, and the dielectric layer is located between the antenna feed layer and the antenna radiating layer. Compared to traditional on-chip antennas, this invention places the dielectric layer between the antenna radiating layer and the antenna feed layer, thereby increasing the effective dielectric layer thickness. Furthermore, the ground layer isolates the substrate layer from the antenna radiating layer, reducing surface wave loss and substrate loss between the on-chip antenna and the substrate layer, thus improving the radiation efficiency and gain performance of the on-chip antenna. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of the present invention and these drawings without creative effort.

[0017] Figure 1 A top view schematic diagram of a full-duplex on-chip antenna provided in an embodiment of the present invention; Figure 2 for Figure 1 A schematic diagram of the cross-sectional structure of the antenna on the full-duplex chip along section line A-A'; Figure 3 A side view schematic diagram of a full-duplex on-chip antenna provided in an embodiment of the present invention; Figure 4 This is a top view schematic diagram of a hollow cylindrical radial structure provided in an embodiment of the present invention; Figure 5 This is a side view schematic diagram of an antenna feed layer provided in an embodiment of the present invention; Figure 6 This is a top view schematic diagram of an antenna feed layer provided in an embodiment of the present invention; Figure 7 The simulation results of the return loss of the transmitting antenna and the receiving antenna in a full-duplex on-chip antenna provided in an embodiment of the present invention are shown in the figure. Figure 8 The simulation results of the isolation between the transmitting and receiving antenna ports in a full-duplex on-chip antenna provided in an embodiment of the present invention are shown in the figure. Figure 9 The simulation results of the gain and radiation efficiency of the transmitting antenna in a full-duplex on-chip antenna provided in an embodiment of the present invention are shown in the figure. Figure 10 The simulation results of the gain and radiation efficiency of the receiving antenna in a full-duplex on-chip antenna provided in an embodiment of the present invention are shown in the figure. Figure 11 The far-field radiation pattern of the transmitting antenna in a full-duplex on-chip antenna at 140 GHz is provided in an embodiment of the present invention. Figure 12 The far-field radiation pattern of the receiving antenna in a full-duplex on-chip antenna at 140 GHz is provided in an embodiment of the present invention. Detailed Implementation

[0018] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0019] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0020] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0021] In the description of this embodiment, the terms "upper" and "lower," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first" and "second" are used merely for descriptive distinction and have no special meaning.

[0022] Figure 1 This is a top view schematic diagram of a full-duplex on-chip antenna provided in an embodiment of the present invention. Figure 2 for Figure 1 A schematic diagram of the cross-sectional structure of the antenna on the full-duplex chip along section line A-A'. Figure 3 This is a side view schematic diagram of a full-duplex on-chip antenna provided in an embodiment of the present invention, as shown below. Figures 1-3 As shown, the full-duplex on-chip antenna includes: a substrate layer 10, a chip metal layer 20, a dielectric layer 30, and an antenna radiating layer 40; the chip metal layer 20 includes a ground layer 201 and an antenna feed layer 202; the ground layer 201 is located on one side of the substrate layer 10, and the antenna feed layer 202 is located on the side of the ground layer 201 away from the substrate layer 10; the antenna feed layer 202 is used to receive, transmit, and transmit electromagnetic signals; the ground layer 201 is used to isolate the substrate layer 10 from the antenna radiating layer 40; the dielectric layer 30 is located on the side of the antenna feed layer 202 away from the substrate layer 10, and is used to couple the energy of the electromagnetic signal to the antenna radiating layer 40 and to couple the energy of the electromagnetic signal from the antenna radiating layer 40; the antenna radiating layer 40 is located on the side of the dielectric layer 30 away from the substrate layer 10, and is used to radiate or receive electromagnetic signals.

[0023] Full-duplex communication technology is one of the key technologies that has received widespread attention in recent years. Full-duplex communication refers to the simultaneous operation of the transmitting and receiving ends on the same frequency channel. Compared with time-division duplex and frequency-division duplex, full-duplex communication can significantly improve spectrum utilization efficiency under ideal conditions, and therefore has important application prospects in millimeter-wave wireless communication, millimeter-wave radar, and future 6G systems.

[0024] Specifically, the full-duplex on-chip antenna includes a substrate layer 10, a chip metal layer 20, a dielectric layer 30, and an antenna radiating layer 40 stacked together. The substrate layer 10 serves as a support layer, supporting and carrying the other film layers located above it. For example, the substrate layer 10 may be a silicon-based substrate.

[0025] A chip metal layer 20 is located on the upper surface of the substrate layer 10, and the chip metal layer 20 includes a ground layer 201 and an antenna feed layer 202. The ground layer 201 is located on the upper surface of the substrate layer 10, and the antenna feed layer 202 is located on the upper surface of the ground layer 201, with the orthographic projection of the ground layer 201 onto the substrate layer 10 covering the orthographic projection of the antenna feed layer 202 onto the substrate layer 10. A dielectric layer 30 is located on the upper surface of the antenna feed layer 202, and an antenna radiating layer 40 is located on the upper surface of the dielectric layer 30. The antenna feed layer 202 can receive, transmit, and transmit electromagnetic signals, and the dielectric layer 30 can couple the energy of the electromagnetic signals to and from the antenna radiating layer 40, thereby achieving signal transmission, transmission, and reception through electromagnetic coupling between the antenna radiating layer 40 above the dielectric layer 30 and the open transmission line with the antenna feed layer 202, thus realizing full-duplex mode.

[0026] Furthermore, for full-duplex communication systems, higher antenna gain and radiation efficiency not only improve transmission capability but also enhance the input signal-to-noise ratio of the receiving link, thereby supporting stable transmission over longer distances, at higher data rates, or with higher-order modulation schemes. As a comparison, in existing technologies, on-chip antennas using standard silicon-based processes are typically limited by factors such as thin dielectric layer thickness, high silicon substrate loss, and significant surface wave effects. This results in a large proportion of the antenna's radiated energy coupling into the substrate and being converted into heat loss, leading to generally low radiation efficiency and gain for on-chip antennas. However, this embodiment of the invention increases the effective dielectric layer thickness of the antenna by positioning the dielectric layer 30 between the antenna feed layer 202 and the antenna radiating layer 40, i.e., by using a structure where the antenna radiating layer 40 disposed on the dielectric layer 30 is separate from the feed network disposed on the chip metal layer 20.

[0027] Furthermore, the antenna radiating layer 40 is separated from the substrate layer 10 by the ground layer 201. In this way, the ground layer 20 isolates most of the energy radiated downward by the antenna radiating layer 40 and that will be lost in the substrate layer 10, and also plays a role in energy reflection. That is, by setting the ground layer 20, the surface wave loss between the traditional on-chip antenna and the substrate and the substrate loss can be reduced, thereby improving the radiation efficiency and gain performance of the on-chip antenna.

[0028] For example, dielectric layer 30 may be a quartz dielectric layer. Ground layer 201 is generally a single, solid metal layer.

[0029] The full-duplex on-chip antenna provided in this embodiment of the invention has a dielectric layer disposed between the antenna radiating layer and the antenna feed layer. This increases the thickness of the effective dielectric layer of the antenna. Furthermore, by isolating the substrate layer from the antenna radiating layer through a ground layer, the surface wave loss and substrate loss between the traditional on-chip antenna and the substrate layer can be reduced, thereby improving the radiation efficiency and gain performance of the on-chip antenna.

[0030] Optional, Figure 4 This is a top view schematic diagram of a hollow cylindrical radial structure provided in an embodiment of the present invention, as shown below. Figure 4 As shown, the antenna radiating layer 40 includes a hollow cylindrical radiating structure 401.

[0031] Specifically, the antenna radiating layer 40 includes a hollow cylindrical radiating structure 401, meaning that the antenna radiating layer 40 is an integral closed structure.

[0032] In contrast, existing technologies separate the receiving antenna from the transmitting antenna and introduce additional cancellation paths at the receiving end to improve isolation. This results in a complex structure, and high isolation performance can only be achieved within a narrow frequency band. However, the embodiments of the present invention employ a hollow cylindrical radiating structure 401, which is simple in structure and enables the coordinated design of transmission and reception on a single structure, thereby achieving the integration and miniaturization of a full-duplex on-chip antenna.

[0033] Optional, continue to refer to Figure 4 The hollow cylindrical radiating structure 401 includes a radiating body 4011 and a central through hole 4012 located inside the radiating body 4011; the orthographic projection of the outer contour of the radiating body 4011 onto the substrate layer 10 is a first rectangle a1, and the orthographic projection of the inner contour of the radiating body 4011 onto the substrate layer 10 is a second rectangle a2, with the geometric center O1 of the first rectangle coinciding with the geometric center O2 of the second rectangle.

[0034] Specifically, the radiating body 4011 surrounds the central through hole 4012. That is, the hollow cylindrical radiating structure 401 can be a hollow cylinder or a hollow square cylinder, etc. In this way, the wiring of the receiving feed circuit 2022 can be set in the area of ​​the central through hole 4012, thereby saving chip area.

[0035] Furthermore, the orthographic projection of the outer contour of the radiating body 4011 onto the substrate layer 10 is a first rectangle a1, and the geometric center O1 of the first rectangle can be understood as the intersection of the diagonals of the first rectangle a1. The orthographic projection of the inner contour of the radiating body 4011 onto the substrate layer 10 is a second rectangle a2, and the geometric center O2 of the second rectangle can be understood as the intersection of the diagonals of the second rectangle a2. The geometric centers O1 and O2 of the first and second rectangles coincide, that is, the first rectangle a1 and the second rectangle a2 are concentrically arranged. This ensures that the width of the radiating body 4011 is uniform, that is, the annular diameter width of the radiating body 4011 is uniform, thereby ensuring the performance of the full-duplex on-chip antenna.

[0036] Preferably, the hollow cylindrical radial structure 401 is centrally symmetric about the geometric center O1 of the first rectangle, that is, the hollow cylindrical radial structure 401 is a centrally symmetric structure.

[0037] For example, both the first rectangle a1 and the second rectangle a2 are squares, and the resonant frequency of the antenna can be changed by altering the ring diameter width, thereby changing the antenna's operating bandwidth and radiation efficiency. It is understood that those skilled in the art can set the specific dimensions of the ring diameter width according to actual needs.

[0038] For example, the area of ​​the first rectangle a1 can be 460×460μm. 2 The annular diameter of the radiating body 4011 can be 100 μm.

[0039] Optional, Figure 5 This is a side view schematic diagram of an antenna feed layer provided in an embodiment of the present invention, as shown below. Figure 1 , Figure 4 and Figure 5 As shown, the antenna feed layer 202 includes a transmit feed network 2021 and a receive feed network 2022; the receive feed network 2022 includes a first signal receiving unit 2022-1 and a second signal receiving unit 2022-2; the radiating body 4011 includes a first radiating portion 41, a second radiating portion 42, a third radiating portion 43, and a fourth radiating portion 44 connected together; the first radiating portion 41 and the third radiating portion 43 are both along a first direction (e.g., Figure 1 Extending along the X direction (as shown), the second radiating portion 42 and the fourth radiating portion 44 both extend along the second direction (as shown). Figure 1The first radiation portion 41 extends along the Y direction shown in the diagram; the second direction Y intersects with the first direction X; the orthographic projection of the first radiation portion 41 on the substrate 10 overlaps with the orthographic projection of the transmit feed network 2021 on the substrate 10; the orthographic projection of the second radiation portion 42 on the substrate 10 overlaps with the orthographic projection of the first signal receiving unit 2022-1 on the substrate 10; the orthographic projection of the fourth radiation portion 44 on the substrate 10 overlaps with the orthographic projection of the second signal receiving unit 2022-2 on the substrate 10.

[0040] Specifically, the first signal receiving unit 2022-1 and the second signal receiving unit 2022-2 are symmetrically arranged to form a differential receiving structure. This allows the differential characteristics to suppress common-mode self-interference from the transmitter, while also improving the receiving signal-to-noise ratio and isolation, and ensuring normal full-duplex operation.

[0041] Specifically, the first radiation section 41, the second radiation section 42, the third radiation section 43, and the fourth radiation section 44 are connected to form a closed radiation body 4011. The orthographic projection of the first radiation section 41 on the substrate 10 overlaps with the orthographic projection of the transmit feed network 2021 on the substrate 10, meaning the transmit feed network 2021 is located directly below the first radiation section 41. The orthographic projection of the second radiation section 42 on the substrate 10 overlaps with the orthographic projection of the first signal receiving unit 2022-1 on the substrate 10, meaning the first signal receiving unit 2022-1 is located directly below the second radiation section 42. The orthographic projection of the fourth radiation section 44 on the substrate 10 overlaps with the orthographic projection of the second signal receiving unit 2022-2 on the substrate 10, meaning the second signal receiving unit 2022-2 is located directly below the fourth radiation section 44. In this way, signals are transmitted, transmitted, and received through electromagnetic coupling between the antenna radiating layer 40 above the dielectric layer 30 and the open transmission line with the antenna feed layer 202.

[0042] Optional, continue to refer to Figure 5The transmitting feed network 2021 includes a single-ended port P1, a first signal transmission line 21, a first open-circuit transmission line 22, and a first transmission line stub 23; the single-ended port P1 is used to receive electromagnetic signals; one end of the first signal transmission line 21 is connected to the single-ended port P1, and the other end of the first signal transmission line 21 is connected to the first open-circuit transmission line 22; the first open-circuit transmission line 22 is used for magnetoelectric coupling with the hollow cylindrical radiating structure 401; the first open-circuit transmission line 22 is connected to the ground layer 201 through the first transmission line stub 23; the first signal receiving unit 2022-1 includes a second open-circuit transmission line 24, a second signal transmission line 25, a first differential port P2, and a second transmission line stub 26; the second open-circuit transmission line 24 is used for magnetoelectric coupling with the hollow cylindrical radiating structure 401; one end of the second signal transmission line 25... The second signal receiving unit 2022-2 includes a third open-circuit transmission line 27, a third signal transmission line 28, a second differential port P3, and a third transmission line stub 29. The third open-circuit transmission line 27 is used for magnetoelectric coupling with the hollow cylindrical radiating structure 401. One end of the third signal transmission line 28 is connected to the second differential port P3, and the other end of the third signal transmission line 28 is connected to the third open-circuit transmission line 27. The second differential port P3 is used for receiving the second radio frequency signal, and the third open-circuit transmission line 27 is connected to the ground layer 201 through the third transmission line stub 29.

[0043] Specifically, the first differential port P2 and the second differential port P3 are arranged adjacent to each other and are located on the opposite side of the single-ended port P1.

[0044] Specifically, the electromagnetic signal is first input through the single-ended port P1, then fed in without reflection by the first signal transmission line 21 and the first open-circuit transmission line 22, and finally coupled into the antenna radiating layer 40 through the dielectric layer 30 to realize the transmission of the electromagnetic signal.

[0045] Conversely, the signal reception process involves first receiving a pair of differential electromagnetic signals from the antenna radiating layer 40. The energy is then coupled into the second open-circuit transmission line 24 and the third open-circuit transmission line 27 via the dielectric layer 30. Finally, the pair of differential electromagnetic signals is received at the first differential port P2 and the second differential port P3 via the second open-circuit transmission line 24, the third open-circuit transmission line 27, the second signal transmission line 25, and the third signal transmission line 28. Specifically, the first differential port P2 receives the first radio frequency (RF) signal, and the second differential port P3 receives the second RF signal. The first and second RF signals have equal amplitudes but opposite phases. This differential signal reception and symmetrical antenna structure significantly suppress interference signals leaking from the antenna's transmitting port to the receiving port, thereby greatly improving the antenna's port isolation.

[0046] It should be noted that the first transmission line stub 23 can be understood as an open-circuit stub or a short-circuit stub. For example, the first signal line transmission stub 23 can be a connecting via, and one end of the first open-circuit transmission line 22 is connected to the ground layer 201 through the first transmission line stub 23, that is, one end of the first open-circuit transmission line 22 is connected to the ground layer 201 through a connecting via.

[0047] Similarly, the second transmission line stub 26 and the third transmission line stub 29 can both be understood as open-circuit stubs or short-circuit stubs. For example, both the second transmission line stub 26 and the third transmission line stub 29 can be connecting vias. The second open-circuit transmission line 24 is connected to the ground layer 201 through a connecting via, and the third open-circuit transmission line 27 is connected to the ground layer 201 through a connecting via.

[0048] For example, the widths of the first signal transmission line 21, the second signal transmission line 25, and the third signal transmission line 28 can all be 12 μm.

[0049] For example, the width of the first transmission line stub 23, the second transmission line stub 26, and the third transmission line stub 29 can all be 12 μm, and the length of each can be 80 μm.

[0050] Optional, continue to refer to Figure 1 , Figure 4 and Figure 5The first transmission line stub 23 includes a first sub-transmission line stub 231 and a second sub-transmission line stub 232; the first open-circuit transmission line 22 includes a first open-circuit microstrip line 221 and a first short-circuit microstrip stub 222 and a second short-circuit microstrip stub 223 located on the same side as the first open-circuit microstrip line 221; one end of the first short-circuit microstrip stub 222 is connected to the first open-circuit microstrip line 221, and the other end of the first short-circuit microstrip stub 222 is connected to the ground layer 201 through the first sub-transmission line stub 231; one end of the second short-circuit microstrip stub 223 is connected to the first open-circuit microstrip line 221, and the other end of the second short-circuit microstrip stub 223 is connected to the ground layer 201 through the second sub-transmission line stub 232. Ground layer 201 is connected; the orthographic projection of the first radiating portion 41 on the substrate layer 10 overlaps with the orthographic projection of the first open-circuit microstrip line 221 on the substrate layer 10; the second transmission line stub 26 includes a third sub-transmission line stub 261 and a fourth sub-transmission line stub 262; the second open-circuit transmission line 24 includes a second open-circuit microstrip line 241 and a third short-circuit microstrip stub 242 and a fourth short-circuit microstrip stub 243 located on the same side of the second open-circuit microstrip line 241; one end of the third short-circuit microstrip stub 242 is connected to the second open-circuit microstrip line 241, and the other end of the third short-circuit microstrip stub 242 is connected to the ground layer 201 through the third sub-transmission line stub 261; the fourth short-circuit microstrip stub 242... One end of segment 243 is connected to the second open-circuit microstrip line 241, and the other end of the fourth short-circuit microstrip stub 243 is connected to the ground layer 201 via the fourth sub-transmission line stub 262; the orthographic projection of the second radiating portion 42 on the substrate layer overlaps with the orthographic projection of the second open-circuit microstrip line 241 on the substrate layer 10, the orthographic projection of the third radiating portion 43 on the substrate layer 10 overlaps with the orthographic projection of a portion of the second signal transmission line 25 on the substrate layer 10, and the orthographic projection of the central via 4012 on the substrate layer 10 covers the orthographic projections of the third short-circuit microstrip stub 242 and the fourth short-circuit microstrip stub 243 on the substrate layer 10; the third transmission line stub 29 includes a fifth sub-transmission line stub 291 and a sixth sub-transmission line stub 292; the third open-circuit transmission line 27 includes a third open-circuit microstrip line 271 and a fifth short-circuit microstrip stub 272 and a sixth short-circuit microstrip stub 273 located on the same side of the third open-circuit microstrip line 271; one end of the fifth short-circuit microstrip stub 272 is connected to the third open-circuit microstrip line 271, and the other end of the fifth short-circuit microstrip stub 272 is connected to the ground layer 201 through the fifth sub-transmission line stub 291; one end of the sixth short-circuit microstrip stub 273 is connected to the third open-circuit microstrip line 271, and the other end of the sixth short-circuit microstrip stub 273 is connected to the ground layer 201 through the sixth sub-transmission line stub 292;The orthographic projection of the fourth radiating portion 44 on the substrate 10 overlaps with the orthographic projection of the third open-circuit microstrip line 271 on the substrate 10. The orthographic projection of the fourth radiating portion on the substrate 10 also overlaps with the orthographic projection of a portion of the third signal transmission line 271 on the substrate 10. Furthermore, the orthographic projection of the central via 4012 on the substrate 10 covers the orthographic projections of the fifth short-circuit microstrip stub 272 and the sixth short-circuit microstrip stub 273 on the substrate 10.

[0051] Specifically, the first short-circuited microstrip stub 222 and the second short-circuited microstrip stub 223 are located on the same side of the first open-circuited microstrip line 221, and both are positioned away from the central via 4012. Furthermore, the first short-circuited microstrip stub 222 and the second short-circuited microstrip stub 223 are located on opposite sides of the first signal transmission line 21. Further, the orthographic projection of the first radiating portion 41 on the substrate 10 overlaps with the orthographic projection of the first open-circuited microstrip line 221 on the substrate 10, and the orthographic projection of the first radiating portion 41 on the substrate 10 can cover as much of the orthographic projection of the first open-circuited microstrip line 221 on the substrate 10 as possible.

[0052] The electromagnetic signal is first input through the single-ended port P1. Then, the electromagnetic signal is fed into the first open-circuit microstrip line 221 without reflection by the first short-circuit microstrip stub 222 and the second short-circuit microstrip stub 223 in the first signal transmission line 21 and the first open-circuit transmission line 22. Finally, the energy is coupled into the antenna radiating layer 40 through the dielectric layer 30 to realize the transmission of the electromagnetic signal.

[0053] Specifically, the third short-circuit microstrip stub 242 and the fourth short-circuit microstrip stub 243 are located on the same side of the second open-circuit microstrip line 241, and both are positioned on the side facing the central via 4012. Furthermore, the third short-circuit microstrip stub 242 and the fourth short-circuit microstrip stub 243 are located on opposite sides of the second signal transmission line 25. The fifth short-circuit microstrip stub 272 and the sixth short-circuit microstrip stub 273 are located on the same side of the third open-circuit microstrip line 271, and both are positioned on the side facing the central via 4012. Furthermore, the fifth short-circuit microstrip stub 272 and the sixth short-circuit microstrip stub 273 are located on opposite sides of the third signal transmission line 28.

[0054] Furthermore, the orthographic projection of the second radiating portion 42 on the substrate overlaps with the orthographic projection of the second open-circuit microstrip line 241 on the substrate 10, and the orthographic projection of the second radiating portion 42 on the substrate 10 can cover as much of the orthographic projection of the second open-circuit microstrip line 241 on the substrate 10 as possible. The orthographic projection of the third radiating portion 43 on the substrate 10 overlaps with the orthographic projection of part of the second signal transmission line 25 on the substrate 10, and the orthographic projection of the central via 4012 on the substrate 10 covers the orthographic projections of the third short-circuit microstrip stub 242 and the fourth short-circuit microstrip stub 243 on the substrate 10. In this way, the traces in the first signal receiving unit 2022-1 can be set in the area of ​​the central via 4012, which can reduce the area of ​​the full-duplex on-chip antenna and realize the miniaturization and integration of the full-duplex on-chip antenna.

[0055] Furthermore, the orthographic projection of the fourth radiating portion 44 on the substrate 10 overlaps with the orthographic projection of the third open-circuit microstrip line 271 on the substrate 10, and the orthographic projection of the fourth radiating portion 44 on the substrate 10 can cover as much of the orthographic projection of the third open-circuit microstrip line 271 on the substrate 10 as possible. The orthographic projection of the fourth radiating portion 43 on the substrate 10 overlaps with the orthographic projection of part of the third signal transmission line 271 on the substrate 10, and the orthographic projection of the central via 4012 on the substrate 10 covers the orthographic projections of the fifth short-circuit microstrip stub 272 and the sixth short-circuit microstrip stub 273 on the substrate 10. In this way, the wiring in the second signal receiving unit 2022-2 can be set in the area of ​​the central via 4012, which can reduce the area of ​​the full-duplex on-chip antenna and realize the miniaturization and integration of the full-duplex on-chip antenna.

[0056] In contrast to the transmitted signal, the signal reception process begins with the antenna radiating layer 40 receiving a pair of differential electromagnetic signals. The energy is then coupled into the second open-circuit microstrip line 241 and the third open-circuit microstrip line 271 via the dielectric layer 30. Finally, the pair of differential electromagnetic signals is received at the first differential port P2 and the second differential port P3 via the third short-circuit microstrip stub 242, the fourth short-circuit microstrip stub 243, the second signal transmission line 25, the fifth short-circuit microstrip stub 272, the sixth short-circuit microstrip stub 273, and the third signal transmission line 28. Specifically, the first differential port P2 receives the first radio frequency (RF) signal, and the second differential port P3 receives the second RF signal. The first and second RF signals have equal amplitudes but opposite phases. This differential signal reception and symmetrical antenna structure significantly suppress interference signals leaking from the antenna's transmitting port to the receiving port, thereby greatly improving the antenna's port isolation.

[0057] It should be noted that one end of the first short-circuited microstrip stub 222 is connected to the first signal transmission line 21 at the position where the first signal transmission line 21 is connected to the first open-circuited microstrip line 221. One end of the second short-circuited microstrip stub 223 is connected to the first signal transmission line 21 at the position where the first signal transmission line 21 is connected to the first open-circuited microstrip line 221.

[0058] One end of the third short-circuited microstrip stub 242 is connected to the second signal transmission line 25 at the position where the second signal transmission line 25 is connected to the second open-circuited microstrip line 241. One end of the fourth short-circuited microstrip stub 243 is connected to the second signal transmission line 25 at the position where the second signal transmission line 25 is connected to the second open-circuited microstrip line 241.

[0059] One end of the fifth short-circuited microstrip stub 272 is connected to the third signal transmission line 28 at the position where the third signal transmission line 28 and the third open-circuited microstrip line 271 are connected. One end of the sixth short-circuited microstrip stub 273 is connected to the third signal transmission line 28 at the position where the third signal transmission line 28 and the third open-circuited microstrip line 271 are connected.

[0060] Optional, Figure 6 This is a top view schematic diagram of an antenna feed layer provided in an embodiment of the present invention, as shown below. Figure 6 As shown, the first open-circuit transmission line 22 is symmetrical about the first axis of symmetry L1, which extends along the second direction Y; the first signal receiving unit 2022-1 and the second signal receiving unit 2022-2 are symmetrical about the first axis of symmetry L1; the second open-circuit transmission line 24 and the third open-circuit transmission line 27 are both symmetrical about the second axis of symmetry L2; the second axis of symmetry L2 extends along the first direction X.

[0061] Specifically, the first signal receiving unit 2022-1 and the second signal receiving unit 2022-2 are symmetrical about the first axis of symmetry L1, which helps to ensure that the transmitting feed network 2021 and the receiving feed network 2022 correspond to the coupling positions in different directions on the hollow cylindrical radiating structure 401. The first signal transmission line 21 and the first open-circuit microstrip line 221 are both symmetrical about the first axis of symmetry L1. The first short-circuit microstrip stub 222 and the second short-circuit microstrip stub 223 are located on both sides of the first signal transmission line 21 and are symmetrical about the first axis of symmetry L1. The second open-circuit microstrip line 241 and the third open-circuit microstrip line 271 are both symmetrical about the second axis of symmetry L2. The third short-circuit microstrip stub 242 and the fourth short-circuit microstrip stub 243 are located on both sides of the second signal transmission line 25 and are symmetrical about the second axis of symmetry L2. The fifth short-circuit microstrip stub 272 and the sixth short-circuit microstrip stub 273 are located on both sides of the third signal transmission line 28 and are symmetrical about the second axis of symmetry L2. By setting up a symmetrical feeding network, good impedance matching can be achieved without introducing a large area of ​​additional feeding structure, thereby reducing feeding loss and reducing the overall chip area. It can also be integrated on-chip with the RF front-end chip, making the overall structure very compact. This further reduces the chip area of ​​the full-duplex on-chip antenna, which is conducive to the miniaturization and high integration of millimeter-wave full-duplex systems.

[0062] Optional, continue to refer to Figure 1 , Figure 4 and Figure 6 The angle between the first axis of symmetry L1 and the second axis of symmetry L2 is a right angle; both the first axis of symmetry L1 and the second axis of symmetry L2 pass through the geometric center O1 of the first rectangle a1.

[0063] Specifically, the angle between the first axis of symmetry L1 and the second axis of symmetry L2 is a right angle, that is, there is a 90° angle between the axes of symmetry of the open transmission lines corresponding to the transmit feed network and the receive feed network. In other words, the transmit antenna and the receive antenna achieve orthogonal polarization diversity, which can significantly suppress the self-interference signal leaked from the transmitter to the receiver and improve the isolation between the transmit and receive ports.

[0064] Optional, continue to refer to Figure 1 and Figure 6The second signal transmission line 25 includes a first transmission portion 251 and a second transmission portion 252 connected together; the first transmission portion 251 includes a first sub-connection portion 2511 extending along a first direction X and a second sub-connection portion 2512 extending along a second direction Y; the second transmission portion 252 extends along the second direction Y; the orthographic projection of the central through hole 4012 on the substrate layer 10 covers the orthographic projection of the first transmission portion 251 on the substrate layer 10, and the orthographic projection of the third radiation portion 43 on the substrate layer 10 overlaps with the orthographic projection of the second transmission portion 252 on the substrate layer 10; The third signal transmission line 28 includes a third transmission section 281 and a fourth transmission section 282 connected together; the third transmission section 281 includes a third sub-transmission section 2811 extending along a first direction X and a fourth sub-transmission section 2812 extending along a second direction Y, and the fourth transmission section 282 extends along the second direction Y; the orthographic projection of the central through-hole 4012 on the substrate layer 10 covers the orthographic projection of the third transmission section 281 on the substrate layer 10, and the orthographic projection of the third radiation section 43 on the substrate layer 10 overlaps with the orthographic projection of the fourth transmission section 282 on the substrate layer 10.

[0065] Specifically, one end of the second sub-connection section 2512 is connected to the first sub-connection section 2511, and the other end is connected to the second transmission section 252. One end of the fourth sub-transmission section 2812 is connected to the third sub-transmission section 2811, and the other end is connected to the fourth transmission section 282. The shapes of the second signal transmission line 25 and the third signal transmission line 28 are both similar to an "L" shape.

[0066] In the second signal transmission line 25, the portion overlapping with the projection of the central through-hole 4012 is the first transmission segment 251, and the portion overlapping with the projection of the third radiator 43 is the second transmission segment 252. Similarly, in the third signal transmission line 28, the portion overlapping with the projection of the central through-hole 4012 is the third transmission segment 281, and the portion overlapping with the projection of the third radiating segment 43 is the fourth transmission segment 282. This design ensures effective signal transmission while saving chip area, enabling the integrated design of a full-duplex on-chip antenna.

[0067] As a feasible implementation, a full-duplex on-chip antenna operates at 140 GHz and has an overall size of 470 × 490 μm. 2 The semiconductor processing technology is a 40nm Complementary Metal-Oxide-Semiconductor (CMOS) process, such as... Figure 2As shown, the antenna includes a substrate layer 10, a chip metal layer 20, a dielectric layer 30, and an antenna radiating layer 40, stacked sequentially from bottom to top. The substrate layer 10 has a resistivity of 10 Ω·cm, a relative permittivity of 11.9, and a thickness of 300 μm. The 40nm CMOS process uses eleven metal layers on the metal sheet, namely M1-M11, with silicon dioxide as the interlayer dielectric. The ground layer 201 is fabricated using a single, complete bottom metal layer M1 from the 40nm CMOS process, and the antenna feed layer 202 is fabricated using the top metal layer M11 from the 40nm CMOS process. The dielectric layer 30 is a quartz dielectric layer with a relative permittivity of 3.8, a thickness of 76 μm, and a loss tangent of 0.002. The quartz dielectric layer increases the overall effective dielectric layer thickness of the on-chip antenna, resulting in higher radiation efficiency and gain. The antenna radiating layer 40 is made of gold, has a thickness of 2 μm, and is fabricated on the surface of the dielectric layer 30 using thin-film circuitry. The dielectric layer 30 is assembled on top of the chip metal layer 20 during the chip post-processing.

[0068] Figure 7 The simulation results of the return loss of the transmitting and receiving antennas in a full-duplex on-chip antenna provided in this embodiment of the invention are shown in the figure. Figure 7 As shown, with a return loss greater than 10dB as the standard, the frequency range covered by the transmitting antenna is 133.29GHz-149.17GHz, and the frequency range covered by the receiving antenna is 134.52GHz-152.75GHz.

[0069] Figure 8 The simulation results of the isolation between the transmitting and receiving antenna ports in a full-duplex on-chip antenna provided in this embodiment of the invention are shown in the figure. Figure 8 As shown, the isolation between ports is greater than 65 dB throughout the entire D-band (110 GHz ~ 170 GHz), achieving a high level of isolation that can be applied to full-duplex communication systems.

[0070] Figure 9 The figure shows the simulation results of the gain and radiation efficiency of the transmitting antenna in a full-duplex on-chip antenna according to an embodiment of the present invention. Figure 10 The simulation results of the gain and radiation efficiency of the receiving antenna in a full-duplex on-chip antenna provided in this embodiment of the invention are shown in the figure. Figure 9 and Figure 10 As shown, the gain and radiation efficiency of the transmitting antenna at 140 GHz are 4.51 dBi and 59.65%, respectively; the gain and radiation efficiency of the receiving antenna at 140 GHz are 4.59 dBi and 58.91%, respectively; both the transmitting and receiving antennas achieved high gain and radiation efficiency within their operating frequency bands.

[0071] Figure 11This invention provides a far-field radiation pattern of the transmitting antenna in a full-duplex on-chip antenna at 140 GHz. Figure 12 The far-field radiation pattern of the receiving antenna in a full-duplex on-chip antenna at 140 GHz, as provided in this embodiment of the invention, is as follows: Figure 11 and Figure 12 As shown, the transmit antenna has an E-plane half-power beamwidth of 86° and an H-plane half-power beamwidth of 80° at 140 GHz; the receive antenna has an E-plane half-power beamwidth of 86° and an H-plane half-power beamwidth of 80° at 140 GHz. Therefore, both the transmit and receive antennas exhibit high polarization purity and excellent cross-polarization ratio.

[0072] In summary, the full-duplex on-chip antenna provided in this embodiment of the invention has higher radiation efficiency and gain: Compared with traditional on-chip antennas, it adopts a structure in which the antenna radiator disposed on the dielectric layer and the feed network disposed on the chip metal layer are separated, increasing the effective dielectric layer thickness of the antenna. Furthermore, by separating the antenna from the substrate layer through a ground layer, it greatly reduces surface wave loss and substrate loss between the traditional on-chip antenna and the silicon substrate, significantly improving the radiation efficiency and gain performance of the on-chip antenna. It also has high transmit / receive isolation: This invention employs a combination of a shared transmit / receive radiator, separate transmit / receive feed networks, differential reception, and orthogonal polarization diversity, thus significantly suppressing self-interference signals leaking from the transmitter to the receiver and improving the isolation between the transmit and receive ports. Featuring a simple and compact structure and a small area: This invention adopts a simple loop antenna structure, realizing the coordinated design of transmission and reception on a single structure. At the same time, the matching network of the receiving part is set at the central through-hole position. By setting symmetrical transmission line stubs, good impedance matching can be achieved without introducing a large area of ​​additional feeding structure, thereby reducing feeding loss and reducing the overall chip area. It can also be integrated on-chip with the RF front-end chip, making the overall structure very compact and further reducing the chip area of ​​the overall transceiver system. This is conducive to realizing the miniaturization and high integration of millimeter-wave full-duplex systems.

[0073] Based on the same inventive concept, this invention also provides a wireless communication device, which includes the full-duplex on-chip antenna described in the above embodiments. Therefore, the wireless communication device provided by this invention also has the beneficial effects described in the above embodiments, which will not be repeated here.

[0074] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art will be able to make various obvious changes, readjustments, and substitutions without departing from the scope of protection of the present invention. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A full-duplex on-chip antenna, characterized in that, include: Substrate layer, chip metal layer, dielectric layer, and antenna radiating layer; The chip metal layer includes a ground layer and an antenna feed layer; The ground layer is located on one side of the substrate layer, and the antenna feed layer is located on the side of the ground layer away from the substrate layer; the antenna feed layer is used to receive, transmit, and transmit electromagnetic signals. The grounding layer is used to isolate the substrate layer from the antenna radiating layer; The dielectric layer is located on the side of the antenna feed layer away from the substrate layer, and is used to couple the energy of the electromagnetic signal to the antenna radiating layer and to couple the energy of the electromagnetic signal from the antenna radiating layer. The antenna radiating layer is located on the side of the dielectric layer away from the substrate layer, and is used to radiate or receive the electromagnetic signals.

2. The full-duplex on-chip antenna according to claim 1, characterized in that, The antenna radiating layer includes a hollow cylindrical radiating structure.

3. The full-duplex on-chip antenna according to claim 2, characterized in that, The hollow cylindrical radiating structure includes a radiating body and a central through hole located inside the radiating body. The orthographic projection of the outer contour of the radiating body onto the substrate is a first rectangle, and the orthographic projection of the inner contour of the radiating body onto the substrate is a second rectangle, wherein the geometric center of the first rectangle coincides with the geometric center of the second rectangle.

4. The full-duplex on-chip antenna according to claim 3, characterized in that, The antenna feed layer includes a transmit feed network and a receive feed network; the receive feed network includes a first signal receiving unit and a second signal receiving unit. The radiation body includes a first radiation section, a second radiation section, a third radiation section, and a fourth radiation section connected together. The first radiating portion and the third radiating portion both extend along a first direction, and the second radiating portion and the fourth radiating portion both extend along a second direction; The second direction intersects with the first direction; The orthographic projection of the first radiating distribution on the substrate overlaps with the orthographic projection of the emitting feed network on the substrate; The orthographic projection of the second radiation distribution on the substrate overlaps with the orthographic projection of the first signal receiving unit on the substrate; The orthographic projection of the fourth radiation distribution on the substrate overlaps with the orthographic projection of the second signal receiving unit on the substrate.

5. The full-duplex on-chip antenna according to claim 4, characterized in that, The transmitting power supply network includes a single-ended port, a first signal transmission line, a first open-circuit transmission line, and a first transmission line stub; the single-ended port is used to receive the electromagnetic signal; one end of the first signal transmission line is connected to the single-ended port, and the other end of the first signal transmission line is connected to the first open-circuit transmission line; the first open-circuit transmission line is used for magnetoelectric coupling with the hollow cylindrical radiating structure; the first open-circuit transmission line is connected to the grounding layer through the first transmission line stub. The first signal receiving unit includes a second open-circuit transmission line, a second signal transmission line, a first differential port, and a second transmission line stub; the second open-circuit transmission line is used for magneto-electric coupling with the hollow cylindrical radiating structure; one end of the second signal transmission line is connected to the first differential port, and the other end of the second signal transmission line is connected to the second open-circuit transmission line; the first differential port is used to receive a first radio frequency signal, and the second open-circuit transmission line is connected to the ground layer through the second transmission line stub; The second signal receiving unit includes a third open-circuit transmission line, a third signal transmission line, a second differential port, and a third transmission line stub; the third open-circuit transmission line is used for magneto-electric coupling with the hollow cylindrical radiating structure; one end of the third signal transmission line is connected to the second differential port, and the other end of the third signal transmission line is connected to the third open-circuit transmission line; the second differential port is used to receive a second radio frequency signal, and the third open-circuit transmission line is connected to the ground layer through the third transmission line stub.

6. The full-duplex on-chip antenna according to claim 5, characterized in that, The first transmission line stub includes a first sub-transmission line stub and a second sub-transmission line stub; the first open-circuit transmission line includes a first open-circuit microstrip line and a first short-circuit microstrip stub and a second short-circuit microstrip stub located on the same side of the first open-circuit microstrip line; one end of the first short-circuit microstrip stub is connected to the first open-circuit microstrip line, and the other end of the first short-circuit microstrip stub is connected to the ground layer through the first sub-transmission line stub; one end of the second short-circuit microstrip stub is connected to the first open-circuit microstrip line, and the other end of the second short-circuit microstrip stub is connected to the ground layer through the second sub-transmission line stub; the orthographic projection of the first radiating distribution on the substrate layer overlaps with the orthographic projection of the first open-circuit microstrip line on the substrate layer. The second transmission line stub includes a third sub-transmission line stub and a fourth sub-transmission line stub; the second open-circuit transmission line includes a second open-circuit microstrip line and a third short-circuit microstrip stub and a fourth short-circuit microstrip stub located on the same side of the second open-circuit microstrip line; one end of the third short-circuit microstrip stub is connected to the second open-circuit microstrip line, and the other end of the third short-circuit microstrip stub is connected to the ground plane through the third sub-transmission line stub; one end of the fourth short-circuit microstrip stub is connected to the second open-circuit microstrip line, and the other end of the fourth short-circuit microstrip stub is connected to the ground plane through the fourth sub-transmission line stub; the orthographic projection of the second radiating portion on the substrate overlaps with the orthographic projection of the second open-circuit microstrip line on the substrate, the orthographic projection of the third radiating portion on the substrate overlaps with the orthographic projection of a portion of the second signal transmission line on the substrate, and the orthographic projection of the central via on the substrate covers the orthographic projections of the third short-circuit microstrip stub and the fourth short-circuit microstrip stub on the substrate; The third transmission line stub includes a fifth sub-transmission line stub and a sixth sub-transmission line stub; the third open-circuit transmission line includes a third open-circuit microstrip line and a fifth short-circuit microstrip stub and a sixth short-circuit microstrip stub located on the same side of the third open-circuit microstrip line; one end of the fifth short-circuit microstrip stub is connected to the third open-circuit microstrip line, and the other end of the fifth short-circuit microstrip stub is connected to the ground layer through the fifth sub-transmission line stub; one end of the sixth short-circuit microstrip stub is connected to the third open-circuit microstrip line, and the sixth short-circuit microstrip stub... The other end is connected to the ground layer via the sixth sub-transmission line stub; the orthographic projection of the fourth radiating portion on the substrate layer overlaps with the orthographic projection of the third open-circuit microstrip line on the substrate layer, the orthographic projection of the fourth radiating portion on the substrate layer overlaps with the orthographic projection of a portion of the third signal transmission line on the substrate layer, and the orthographic projection of the central via on the substrate layer covers the orthographic projection of the fifth short-circuit microstrip stub on the substrate layer and the orthographic projection of the sixth short-circuit microstrip stub on the substrate layer.

7. The full-duplex on-chip antenna according to claim 5, characterized in that, The first open-circuit transmission line is symmetrical about a first axis of symmetry, and the first axis of symmetry extends along the second direction; The first signal receiving unit and the second signal receiving unit are symmetrical about the first axis of symmetry. Both the second open-circuit transmission line and the third open-circuit transmission line are symmetrical about a second axis of symmetry; the second axis of symmetry extends along the first direction.

8. The full-duplex on-chip antenna according to claim 7, characterized in that, The angle between the first axis of symmetry and the second axis of symmetry is a right angle; Both the first axis of symmetry and the second axis of symmetry pass through the geometric center of the first rectangle.

9. The full-duplex on-chip antenna according to claim 6, characterized in that, The second signal transmission line includes a first transmission portion and a second transmission portion connected together; the first transmission portion includes a first sub-connection portion extending along the first direction and a second sub-connection portion extending along the second direction; the second transmission portion extends along the second direction; the orthographic projection of the central via on the substrate layer covers the orthographic projection of the first transmission portion on the substrate layer, and the orthographic projection of the third radiation portion on the substrate layer overlaps with the orthographic projection of the second transmission portion on the substrate layer; The third signal transmission line includes a third transmission portion and a fourth transmission portion connected together; the third transmission portion includes a third sub-transmission portion extending along the first direction and a fourth sub-transmission portion extending along the second direction, the fourth transmission portion extending along the second direction; the orthographic projection of the central via on the substrate layer covers the orthographic projection of the third transmission portion on the substrate layer, and the orthographic projection of the third radiation portion on the substrate layer overlaps with the orthographic projection of the fourth transmission portion on the substrate layer.

10. A wireless communication device, characterized in that, Includes the full-duplex on-chip antenna as described in any one of claims 1-9.

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