A broadband dual operational state circularly polarized magneto-electric dipole antenna

Abstract

The application discloses a broadband dual-working-state circularly polarized magnetoelectric dipole antenna, and belongs to the technical field of microwave antennas. The antenna comprises, from bottom to top, a feeding layer, a metal grounding layer, a parasitic patch layer and a radiation layer. The radiation layer is provided with four center-symmetrically distributed blade-type radiation patches; the parasitic patch layer is provided with a ring-shaped parasitic structure enclosed by four arc-shaped parasitic patches, and the ring-shaped parasitic structure is connected with a metal ground back plate through a metal buried hole; and the bottom of a feeding network is connected with two feeding ports. The antenna is further provided with upper and lower layer feeding patches which are orthogonal to each other and are connected with the feeding network through metal vias. By separately switching different feeding ports, the right-hand circular polarization and the left-hand circular polarization of two working states can be freely reconstructed. The application has a -10 dB common impedance bandwidth of 50.0% and a common 3-dB axial ratio bandwidth of 8.53 GHz to 13.51 GHz, and simultaneously has an ultra-wide angle coverage capacity, and is suitable for satellite communication and radar detection systems.

Description

Technical Field

[0001] This invention relates to a broadband dual-operating-state circularly polarized magnetoelectric dipole antenna, belonging to the field of microwave antenna technology. Background Technology

[0002] With the rapid development of modern wireless communication technologies (such as 5G / B5G mobile communication, satellite communication, and radar detection systems), the system places unprecedented demands on the channel capacity, coverage, and multipath interference resistance of antennas. Circularly polarized antennas, due to their ability to effectively suppress multipath fading effects in electromagnetic wave transmission and completely eliminate polarization mismatch between transmitting and receiving antennas, have been widely used in complex communication scenarios. Meanwhile, to improve spectrum utilization and system anti-interference capabilities, reconfigurable dual-circularly polarized (RHCP and LHCP) antennas with polarization diversity capabilities are gradually becoming a research hotspot.

[0003] Traditional circularly polarized microstrip antennas, while having a low profile and being easy to integrate, typically suffer from inherent drawbacks such as narrow impedance bandwidth and axial ratio bandwidth, making them unsuitable for modern broadband communication requirements. In recent years, magnetoelectric dipole antennas have gained significant popularity in engineering due to their extremely wide bandwidth, excellent impedance matching, low cross-polarization, and highly symmetrical E-plane and H-plane radiation patterns. However, existing dual-circularly polarized magnetoelectric dipole antennas still face the following significant technical bottlenecks in practical applications: First, the inherent contradiction between high gain and wide beamwidth is difficult to reconcile. In scenarios involving wide-area coverage by base stations or omnidirectional detection by mobile platforms, antennas not only require high axial gain to ensure communication distance, but also must possess ultra-wide beam coverage capability (i.e., wide half-power beamwidth, HPBW). However, in traditional directional antenna design, "wide beamwidth" and "high gain" are mutually restrictive. Simply widening the beamwidth often leads to a sharp drop in antenna gain; moreover, polarization purity is easily degraded during wide-angle radiation, and the axial ratio at edge angles often exceeds the limit significantly, making it difficult to simultaneously achieve both wide beamwidth and high polarization purity within a wide bandwidth.

[0004] Second, broadband dual-polarization reconfiguration networks are complex and operate in limited frequency bands. Existing dual-circular polarization antennas often employ complex hybrid feeding networks, use diode switches to change the surface current of the radiating patch, or create slots in the radiating patch to achieve polarization switching. These methods either disrupt the symmetry of the antenna structure, leading to pattern distortion, or can only maintain high isolation and good orthogonal phase difference at both ports within an extremely narrow frequency band, making it difficult to achieve free reconfiguration of ultra-wideband polarization states in high-frequency bands such as X / Ku. Summary of the Invention

[0005] To overcome the shortcomings of existing technologies, this invention provides a broadband dual-operating-state circularly polarized magnetoelectric dipole antenna. This invention utilizes a feed network containing a broadband dual-section 3dB hybrid coupler, and by individually switching different feed ports of the excitation layer, it flexibly achieves free reconfiguration of two radiation states: right-hand circular polarization (RHCP) and left-hand circular polarization (LHCP). Right-hand circular polarization corresponds to operating state one, and left-hand circular polarization corresponds to operating state two.

[0006] To achieve the above effects, the technical solution adopted by the present invention is as follows: A broadband dual-operating-state circularly polarized magnetoelectric dipole antenna includes, from top to bottom, a radiating layer, a parasitic patch layer, a metallic ground backplate, and a feed layer. The radiation layer includes a first dielectric substrate and a second dielectric substrate stacked on top of each other as a support body; the upper surface of the first dielectric substrate is provided with four blade-shaped radiation patches, and the four blade-shaped radiation patches are rotationally symmetrical. The parasitic patch layer includes a third dielectric substrate that serves as the carrier; the upper surface of the third dielectric substrate is provided with an annular parasitic structure; The metal backplate is located on the lower surface of the third dielectric substrate; The power feeding layer includes a power feeding network and a fourth dielectric substrate as the main carrier; the fourth dielectric substrate is located on the lower surface of the metal ground backplane, and the power feeding network is located on the lower surface of the fourth dielectric substrate. An upper feed patch is disposed at the center of the upper surface of the first dielectric substrate; a lower feed patch is disposed at the center of the upper surface of the second dielectric substrate; the bottom of the upper feed patch and the bottom of the lower feed metal patch are respectively connected to the feed network through corresponding metal through holes.

[0007] Furthermore, a semi-cured layer is provided between the first dielectric substrate and the second dielectric substrate, between the annular parasitic structure and the third dielectric substrate, and between the third dielectric substrate and the metal ground backplate.

[0008] Furthermore, the upper and lower power feed patches are orthogonally arranged, and both the upper and lower power feed patches are rectangular structures with semi-circular connections at both ends, with corresponding metal through holes connected to the bottom of one end of the rectangular structure.

[0009] Furthermore, the main body of the blade-shaped radiating patch is a rectangular patch, and a chamfer is removed from both opposite ends of the rectangular patch; the inner edge of the chamfer is an arc, which extends from the middle of one side of the rectangular patch to the middle of the adjacent side. The centers of the two arcs on the same blade-shaped radiating patch are located in the area between the two arcs; the two chamfers are both far from the center of the first dielectric substrate of the top-feed patch.

[0010] Furthermore, each blade-shaped radiating patch has a metal via array at its inner corner bottom, and the bottom of the metal via array is connected to a metal ground plate.

[0011] Furthermore, the annular parasitic structure includes four arc-shaped parasitic patches; the centers of the four arc-shaped parasitic patches overlap to form a circumference, and there are gaps between adjacent arc-shaped parasitic patches; The annular parasitic structure has eight metal holes, divided into four groups. Two holes in each group are located at the two ends of the corresponding arc-shaped parasitic patch. The top of the metal holes is connected to the arc-shaped parasitic patch, and the bottom is connected to the metal backplate.

[0012] Furthermore, the power supply network employs a broadband dual-section 3dB hybrid coupler, comprising two side microstrip lines and three intermediate microstrip lines; The inner ends of the two side microstrip lines are connected to the bottom of the corresponding metal vias, and the outer ends are connected to the first feed port and the second feed port, respectively; the three intermediate microstrip lines are connected between the two side microstrip lines and are parallel to each other.

[0013] Furthermore, the three intermediate microstrip lines are named intermediate microstrip line a, intermediate microstrip line b, and intermediate microstrip line c in order of their distance from the feed port from farthest to closest. Among them, the widths of intermediate microstrip lines a and c are the same, both smaller than the width of intermediate microstrip line b.

[0014] Compared with the prior art, the present invention has the following beneficial effects: 1. Exhibits an extremely wide common impedance matching bandwidth. Thanks to the synergistic effect of the multi-layer stacked structure, blade-shaped radiating patch, and feed network, this invention exhibits excellent broadband two-port impedance matching performance. Test results show that the -10 dB common impedance bandwidth of the two RF input ports covers 8.35 GHz to 13.92 GHz, with a relative impedance bandwidth as high as 50.0%, greatly expanding the antenna's fundamental physical operating frequency band.

[0015] 2. High polarization purity and highly consistent dual-state switching. This antenna covers a common 3-dB axial ratio bandwidth of 8.53 GHz to 13.51 GHz in both right-hand circular (RHCP) and left-hand circular (LHCP) polarization states. This demonstrates that the invention not only maintains excellent polarization purity across the entire wide operating range but also exhibits extremely high performance consistency during dual-circular polarization state switching, completely avoiding the polarization frequency offset phenomenon that easily occurs in traditional reconfigurable antennas during state switching.

[0016] 3. The radiation pattern is significantly optimized, achieving ultra-wide-angle coverage. This invention innovatively introduces a ring-shaped parasitic structure, which generates strong electromagnetic coupling with the blade-shaped radiating patch, effectively optimizing the antenna's radiation pattern. It not only suppresses lateral wave interference but also enables the antenna to achieve extremely wide circularly polarized beam coverage over a wide bandwidth (3-dB axial ratio beamwidth can reach 130° to over 270°), overcoming the defect of easily deteriorating beam polarization in traditional high-gain antennas. Attached Figure Description

[0017] Figure 1 This is an exploded perspective view of an embodiment of the present invention; Figure 2 This is a three-dimensional structural schematic diagram of an embodiment of the present invention; Figure 3 This is a top view of the overall structure of the two feed probes and the metal vias of all the radiating patches in an embodiment of the present invention. Figure 4 This is a three-dimensional structural schematic diagram of two feeding probes according to an embodiment of the present invention; Figure 5 This is a top view of the overall structure of an embodiment of the present invention; Figure 6 This is a side view of the overall structure of an embodiment of the present invention; Figure 7 This is a schematic diagram of the overall structure of the metal backplate according to an embodiment of the present invention; Figure 8 This is a schematic diagram of the overall structure of the power supply network according to an embodiment of the present invention; Figure 9 This is a top view of the overall structure of the annular parasitic structure according to an embodiment of the present invention; Figure 10 This is a schematic diagram of the shaft ratio bandwidth of two working states according to an embodiment of the present invention; Figure 11 This is a two-dimensional axial ratio radiation pattern of two orthogonal radiation surfaces in the operating state of 9GHz according to an embodiment of the present invention; Figure 12 This is a two-dimensional axial ratio pattern of two orthogonal radiating surfaces in an operating state of 9.5 GHz according to an embodiment of the present invention; Figure 13 This is a two-dimensional axial ratio radiation pattern of two orthogonal radiating surfaces in the operating state of 10GHz according to an embodiment of the present invention; Figure 14 These are the gain curves of the main axis direction as a function of frequency under two working states in this embodiment of the invention; Figure 15 This is a two-dimensional axial ratio radiation pattern of two orthogonal radiating surfaces in the operating state of 9GHz according to an embodiment of the present invention; Figure 16 This is a two-dimensional axial ratio pattern of two orthogonal radiating surfaces in the operating state of 9.5 GHz according to an embodiment of the present invention; Figure 17 This is a two-dimensional axial ratio pattern of two orthogonal radiating surfaces in the second operating state of 10 GHz according to an embodiment of the present invention; Figure 18 This is a schematic diagram of the current surface flow direction within one cycle in the first working state of the present invention at 9.5 GHz; Figure 19 This is a schematic diagram of the current surface flow direction within one cycle in the second working state of the present invention at 9.5 GHz; Figure 20 This is the radiation pattern of two orthogonal radiating surfaces in the first working state of the present invention, at 9.5 GHz; Figure 21 This is the radiation pattern of two orthogonal radiating surfaces in the second working state of the present invention at 9.5 GHz; Figure 22 This is a curve showing the reflection coefficient as a function of frequency under the first excitation port (corresponding to state one) and the second excitation port (corresponding to state two) in an embodiment of the present invention. In the diagram: 1. Blade-shaped radiating patch; 2. Upper feed patch; 3. First dielectric substrate; 4. First prepreg layer; 5. Second dielectric substrate; 6. Annular parasitic structure; 7. Second prepreg layer; 8. Third dielectric substrate; 9. Third prepreg layer; 10. Metal ground plane; 11. Fourth dielectric substrate; 12. Feed network; 13. Metal via; 14. Lower feed patch; 15. Metal through-hole; 16. Arc; 17. Arc-shaped parasitic patch; 18. Gap; 19. Metal buried via; 51. First feed port; 52. Second feed port. Detailed Implementation

[0018] The present invention will now be described in further detail.

[0019] like Figures 1 to 9 As shown, this embodiment includes a blade-shaped radiating patch 1, an upper feed probe, a first dielectric substrate 3, a first prepreg layer 4, a second dielectric substrate 5, an annular parasitic structure 6, a second prepreg layer 7, a third dielectric substrate 8, a third prepreg layer 9, a metal ground backplane 10, a fourth dielectric substrate 11, a feed network 12, a metal via 13, a lower feed patch 14, a first feed port 51, and a second feed port 52.

[0020] The antenna consists of a feed layer, a metal ground layer, a parasitic patch layer, and a radiating layer from bottom to top.

[0021] The radiating layer includes a first dielectric substrate 3 as the main carrier. Four blade-shaped radiating patches 1 of the same size and shape are disposed on the upper surface of the first dielectric substrate 3. The four blade-shaped radiating patches 1 are centrally symmetrical about the center of the antenna.

[0022] The blade-shaped radiating patch 1 has a rectangular body, with a chamfer removed from each of its opposite ends. The inner edge of the chamfer is an arc, extending from the middle of one side of the rectangular patch to the middle of the adjacent side. The centers of the two arcs on the same blade-shaped radiating patch 1 are located in the area between the two arcs, and both chamfers are far from the feed patch at the center of the first dielectric substrate 3. A metal via array is provided at the bottom of the inner corner of each blade-shaped radiating patch 1. The metal via array consists of four metal vias 13, which are arranged along an arc. The bottom of the metal vias 13 is connected to the metal ground backplate 10.

[0023] The radiating layer also includes an upper feed patch 2, which is located at the center of the upper surface of the first dielectric substrate 3. The feed patch is a rectangular structure with semicircles connected at both ends. A metal via of the upper feed patch 2 is biased and connected to one end of the feed patch. The upper feed patch and its connected metal via constitute the upper layer feed probe.

[0024] The first semi-cured layer 4 is located between the lower surface of the first dielectric substrate 3 and the upper surface of the second dielectric substrate 5.

[0025] The parasitic patch layer includes a second dielectric substrate 5 and a third dielectric substrate 8 as the main carriers, and an annular parasitic structure 6 located on the lower surface of the second dielectric substrate 5. The annular parasitic structure 6 is cut into four identical parts by four slits 18, which are four arc-shaped parasitic patches 17. The annular parasitic structure 6 is located between the lower surface of the second dielectric substrate 5 and the upper surface of the second semi-cured layer 7. The centers of the four arc-shaped parasitic patches 17 coincide to form a circle, and there are slits 18 between adjacent arc-shaped parasitic patches 17. There are eight metal buried holes 19 in the annular parasitic structure 6, divided into four groups. Two holes in each group are located at the two ends of the corresponding arc-shaped parasitic patches 17. The top of the metal buried holes 19 is connected to the arc-shaped parasitic patch 17, and the bottom is connected to the metal ground plate 10.

[0026] The lower feed patch 14 is located at the center of the upper surface of the second dielectric substrate 5 and is spatially orthogonal to the upper feed patch 2. The lower feed patch 14 is also a rectangular structure with semicircles connected at both ends. The metal via of the lower feed patch 14 is biased and connected to one end of the feed patch. The lower feed patch 14 and the corresponding metal via constitute the lower layer feed probe.

[0027] The second semi-cured layer 7 is located between the lower surface of the second dielectric substrate 5 and the upper surface of the third dielectric substrate 8. The third semi-cured layer 9 is located between the lower surface of the third dielectric substrate 8 and the upper surface of the metal ground backplate 10.

[0028] The metal grounding layer is a metal ground backplate 10, located between the lower surface of the third semi-cured layer 9 and the upper surface of the fourth dielectric substrate 11. The metal ground backplate 10 has two circular notches, which correspond to the metal vias of the upper layer feed probe and the metal vias of the lower layer feed probe, respectively.

[0029] The power supply layer includes a fourth dielectric substrate 11 as the main support and a power supply network 12 located on the lower surface of the fourth dielectric substrate 11. The power supply network 12 adopts a broadband dual-junction 3dB hybrid coupler, and the two external ends of the power supply network are respectively connected to the first power supply port 51 and the second power supply port 52. The first feed port 51 and the second feed port 52 are both rectangular and the same size, located on the side of the fourth dielectric substrate 11. When the first feed port 51 is fed alone, it corresponds to the right-hand circular polarization working state, and when the second feed port 52 is fed alone, it corresponds to the left-hand circular polarization working state.

[0030] The metal vias of the upper feed probe are used to connect the upper feed patch 2 and the feed network 12, and the metal vias of the lower feed probe are used to connect the lower feed patch 14 and the feed network 12.

[0031] By individually switching between the first feed port 51 and the second feed port 52, the right-hand circular polarization working state and the left-hand circular polarization working state can be freely reconfigured.

[0032] Reference Figure 1 , Figure 3 and Figure 5 In this embodiment, there are a total of 16 metal vias 13 of the radiating patch, and four of them are located at the edge of the blade-shaped radiating patch 1 near the power feed patch and connect the blade-shaped radiating patch 1 and the metal ground backplate 10.

[0033] Reference Figure 7 and Figure 8 In this embodiment, the power supply network 12 adopts a broadband dual-section 3dB hybrid coupler, including two side microstrip lines and three middle microstrip lines. The inner ends of the two side microstrip lines are connected to the bottom of the corresponding metal vias, and the outer ends are connected to the first feed port 51 and the second feed port 52, respectively. The three intermediate microstrip lines are connected between the two side microstrip lines and are parallel to each other.

[0034] The three intermediate microstrip lines are named intermediate microstrip line a, intermediate microstrip line b, and intermediate microstrip line c, in order of their distance from the feed port from farthest to closest. Among them, the widths of intermediate microstrip lines a and c are the same, both smaller than the width of intermediate microstrip line b.

[0035] To achieve perfect impedance matching and high output phase stability over an ultra-wideband environment, this invention employs a step-wise optimization of the coupler's characteristic impedance distribution: the central microstrip line b, located near the geometric center of the structure, serves as the main coupling channel with a relatively wide physical linewidth (exhibiting low characteristic impedance); while the central microstrip lines a and c serve as weak coupling channels with extremely narrow physical linewidths (exhibiting high characteristic impedance). This binomial or Chebyshev-distributed "wide at the center, narrow at the edges" structure breaks through the physical bottleneck of traditional single-section bridge narrowband resonance, enabling the antenna to maintain highly consistent equal-amplitude power distribution and precise 90° orthogonal phase difference across an extremely wide frequency band (such as the entire X-band).

[0036] Figure 1 The dimensions of the —9 structure are (in millimeters): The lengths of ab, ac, ad, ae, af, ag, ah, ai, am, ana, ak, al, am, an, ao, ap, aq, ar, as, at, av, and au are 5.25, ac, ad, ae, af, ag, aq, au, and au are 18.75, 3.248, 0.508, ao, ap, aq, ar, as, at, av, and au are 0.1, 0.7, 0.7, 0.7, 0.1, and 0.7, ... The lengths are as follows: 0.5, aw (7.8), ax (4.3), ay (0.8), az (1.8), ba (2.7), bb (1.95), bc (2.2), bf (0.575), bg (0.775), bh (2.45), bi (4.6), bk (1.5), bl (2.15), bm (1.6), bn (0.3), bo (18), bp (14), and bq (10.285).

[0037] Reference Figure 10 In this embodiment, the antenna exhibits excellent broadband circular polarization performance in both operating states. The 3 dB axial ratio bandwidths for state one and state two are 47.1% (8.38–13.54 GHz) and 45.2% (8.53–13.51 GHz), respectively. To ensure that the antenna maintains circular polarization radiation when switching states, its effective overlap 3 dB axial ratio bandwidth is 45.2% (8.53–13.51 GHz).

[0038] Reference Figures 11 to 13 In this embodiment, when the antenna is in operation, it operates within the 9GHz to 10GHz frequency band and possesses an extremely wide 3dB axial ratio beamwidth (ARBW). In particular, at the center frequency of 9.5GHz, the effective coverage of its two main orthogonal radiating surfaces (Phi=0° and Phi=90°) exceeds 190° and 260° respectively.

[0039] Reference Figure 14 In this embodiment, within the core operating frequency band of 8GHz to 11.5GHz, the peak gain curves of the antenna in the two states highly overlap and are stably maintained between 7dBi and 8dBi, exhibiting excellent gain flatness and broadband radiation characteristics.

[0040] Reference Figures 15 to 17 In this embodiment, after state reconstruction (state two), the antenna can still maintain excellent wide-beam circular polarization performance within its core operating frequency band (9GHz-10GHz). At the center frequency, the 3dB axial ratio beamwidth of its orthogonal radiating surface still reaches over 160° and 210° respectively. More importantly, through state switching, the antenna successfully reshapes the spatial polarization coverage pattern.

[0041] Reference Figures 18 to 19 The dominant current vector on the antenna surface exhibits a dynamic characteristic of stable amplitude and spatially orthogonal alternation. In the first operating state, the surface current vector rotates uniformly counterclockwise over time; while after switching to the second operating state, the surface current vector rotates clockwise in a regular manner. This complete reversal of the current rotation direction achieved through a control network under the same physical structure confirms from the electromagnetic excitation source that the present invention can efficiently excite two sets of mutually orthogonal circular polarization modes.

[0042] Reference Figure 20 and Figure 21 The antenna maintained highly consistent and stable spatial radiation characteristics in both different reconfiguration states.

[0043] Reference Figure 22 This antenna possesses excellent broadband impedance matching characteristics. The effective operating frequency bands of the antenna in states one and two cover 8.20GHz to 13.92GHz and 8.35GHz to 13.97GHz, respectively, with an effective impedance bandwidth of up to 5.57GHz (relative bandwidth of approximately 50%).

[0044] The above is just one example. To obtain a broadband dual-operation circularly polarized magnetoelectric dipole antenna with different center frequencies, different parameters can be adjusted according to the specific implementation method to achieve different operating frequency bands.

[0045] It should be understood that the above description of the specific embodiments of this patent is merely an exemplary description provided to facilitate understanding of the patent solution by those skilled in the art, and does not imply that the scope of protection of this patent is limited to these specific examples. Those skilled in the art can obtain more specific embodiments without any creative effort by combining technical features, replacing some technical features, adding more technical features, etc., of the various examples listed in this patent, provided that they have a full understanding of the technical solution of this patent. All of these specific embodiments are within the scope of the claims of this patent, and therefore, these new specific embodiments should also be within the scope of protection of this patent.

Claims

1. A broadband dual-operating-state circularly polarized magnetoelectric dipole antenna, comprising, from top to bottom, a radiating layer, a parasitic patch layer, a metallic ground backplate, and a feed layer; characterized in that, The radiation layer includes a first dielectric substrate (3) and a second dielectric substrate (5) which are stacked together as the main support; the upper surface of the first dielectric substrate (3) is provided with four blade-shaped radiation patches (1), and the four blade-shaped radiation patches (1) are rotationally symmetrical. The parasitic patch layer includes a third dielectric substrate (8) that serves as the carrier; the upper surface of the third dielectric substrate (8) is provided with an annular parasitic structure (6). The metal backplate (10) is located on the lower surface of the third dielectric substrate (8); The power feeding layer includes a power feeding network (12) and a fourth dielectric substrate (11) as the main carrier; the fourth dielectric substrate (11) is located on the lower surface of the metal ground backplate (10), and the power feeding network (12) is located on the lower surface of the fourth dielectric substrate (11). The upper surface of the first dielectric substrate (3) is provided with a feed patch for the upper feed probe at the center; The upper surface of the second dielectric substrate (5) is provided with a feed patch for the lower layer feed probe; the bottom of the feed patch for the upper layer feed probe and the bottom of the feed patch for the lower layer feed probe are respectively connected to the feed network (12) through corresponding metal through holes (15).

2. The broadband dual-operating-state circularly polarized magnetoelectric dipole antenna according to claim 1, characterized in that, A first semi-cured layer (4) is provided between the first dielectric substrate (3) and the second dielectric substrate (5), a second semi-cured layer (7) is provided between the annular parasitic structure (6) and the third dielectric substrate (8), and a third semi-cured layer (9) is provided between the third dielectric substrate (8) and the metal ground backplate (10).

3. The broadband dual-operating-state circularly polarized magnetoelectric dipole antenna according to claim 1, characterized in that, The feed patch of the upper feed probe and the feed patch of the lower feed probe are orthogonally arranged. Both the feed patch of the upper feed probe and the feed patch of the lower feed probe are rectangular structures with semicircular connections at both ends, and the corresponding metal through holes (15) are connected to the bottom of one end of the rectangular structure.

4. A broadband dual-operating-state circularly polarized magnetoelectric dipole antenna according to claim 1, characterized in that, The main body of the blade-type radiating patch (1) is a rectangular patch, and a chamfer is removed from both ends of the rectangular patch; the inner edge of the chamfer is an arc (16), which extends from the middle of one side of the rectangular patch to the middle of the adjacent side. The centers of the two arcs (16) on the same blade-type radiating patch (1) are located in the area between the two arcs (16); the feed patch of the upper feed probe with two chamfers far away from the center of the first dielectric substrate (3).

5. A broadband dual-operating-state circularly polarized magnetoelectric dipole antenna according to claim 1, characterized in that, Each blade-shaped radiating patch (1) has a metal via array at the bottom of its inner corner, and the bottom of the metal via array is connected to a metal ground plate (10).

6. A broadband dual-operating-state circularly polarized magnetoelectric dipole antenna according to claim 1, characterized in that, The annular parasitic structure (6) includes four arc-shaped parasitic patches (17); the centers of the four arc-shaped parasitic patches (17) overlap to form a circle, and there are gaps (18) between adjacent arc-shaped parasitic patches (17). The annular parasitic structure (6) has eight metal holes (19) in total, divided into four groups. Two holes in each group are located at the two ends of the corresponding arc-shaped parasitic patch (17). The top of the metal hole (19) is connected to the arc-shaped parasitic patch (17), and the bottom is connected to the metal back plate (10).

7. A broadband dual-operating-state circularly polarized magnetoelectric dipole antenna according to claim 1, characterized in that, The power supply network (12) adopts a broadband dual-section 3dB hybrid coupler, including two side microstrip lines and three middle microstrip lines; The inner ends of the two side microstrip lines are connected to the bottom of the corresponding metal vias, and the outer ends are connected to the first feed port (51) and the second feed port (52), respectively; the three intermediate microstrip lines are connected between the two side microstrip lines and are parallel to each other.

8. A broadband dual-operating-state circularly polarized magnetoelectric dipole antenna according to claim 7, characterized in that, The three intermediate microstrip lines are named intermediate microstrip line a, intermediate microstrip line b, and intermediate microstrip line c, in order of their distance from the feed port from farthest to closest. Among them, the widths of intermediate microstrip lines a and c are the same, both smaller than the width of intermediate microstrip line b.

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