Thermally modulated spontaneous self-receiving microscale semiconductor device for optical interconnect applications

Abstract

The application provides a thermal modulation self-emission and self-reception micron semiconductor device for optical interconnection application and a preparation method. The thermal modulation self-emission and self-reception micron semiconductor device comprises a substrate, a quantum well epitaxial structure formed on the substrate, and a thermal modulation layer arranged around an active region of the quantum well epitaxial structure, wherein the thermal modulation layer is configured to directly heat the active region by using the Joule effect to regulate the temperature of the active region under the condition of being applied with a voltage. The thermal modulation self-emission and self-reception micron semiconductor device realizes rapid, accurate and programmable local temperature control of the active region of the detector by integrating a miniature heating resistor at the chip level.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and in particular to a thermally modulated self-emitting and self-receiving micron-scale semiconductor device for optical interconnect applications and its fabrication method. Background Technology

[0002] In the field of optical interconnects, a novel self-transmitting and self-receiving optical interconnect architecture based on micro-LED arrays and multi-core imaging fiber technology is widely used. It achieves transmission distances of up to 50 meters (more than 10 times that of copper cables), reduces power consumption by 68%, and boasts 100 times the reliability of existing optical interconnect technologies. This demonstrates the technological potential and advantages of Micro-LEDs as a next-generation high-bandwidth, low-power, and highly reliable network connectivity solution. Furthermore, this self-transmitting and self-receiving structure ensures the uniformity of materials at the transmitting and receiving ends, as well as consistency in array number and spacing, effectively avoiding the bit errors caused by signal merging and decomposition during signal transmission in traditional optical interconnect systems.

[0003] However, such Micro-LEDs face a key challenge in practical applications of self-emission and self-reception: the position of the detection peak is offset from the position of the emission peak, and the responsivity of the detection end does not meet the required requirements. Summary of the Invention

[0004] In view of this, the present invention provides a thermally modulated self-emitting and self-receiving micron-scale semiconductor device for optical interconnect applications and its fabrication method. By actively controlling the temperature to achieve a shift in the optical response spectral range, the detector's responsivity to incident wavelength light sources is improved, thereby better meeting the functional requirements of semiconductor devices in optical interconnect applications to simultaneously emit and receive optical signals, and at least partially solving the above-mentioned technical problems.

[0005] One embodiment of the present invention provides a thermally modulated self-emitting and self-receiving micron-scale semiconductor device for optical interconnect applications, comprising: a substrate; a quantum well epitaxial structure formed on the substrate; and a thermal modulation layer disposed around the active region of the quantum well epitaxial structure. The thermal modulation layer is configured to directly heat the active region using the Joule effect when a voltage is applied, so as to regulate the temperature of the active region.

[0006] According to an embodiment of the present invention, the thermal modulation layer comprises a double-layer metal structure or a conductive thermal resistance wire, and the thickness of the thermal modulation layer is less than or equal to 1 μm.

[0007] According to embodiments of the present invention, the material of the thermal modulation layer includes one or more of platinum, tungsten, titanium, nickel, chromium, gold, or copper.

[0008] According to an embodiment of the present invention, the thermal modulation layer is arranged in a rectangular or surrounding shape around the active region. The power supply method of the thermal modulation layer includes pulse power supply or constant power supply, and the temperature range of the active region is adjusted to 0°C~150°C.

[0009] According to an embodiment of the present invention, it further includes: an insulating dielectric layer formed on the upper and lower surfaces of the thermal modulation layer, used to isolate the thermal modulation layer so that the thermal modulation layer can work independently.

[0010] According to embodiments of the present invention, the substrate includes one or more of the following: silicon substrate, sapphire substrate, silicon carbide substrate, gallium arsenide substrate, indium phosphide substrate, gallium phosphide substrate, gallium nitride substrate, and telluride substrate.

[0011] According to an embodiment of the present invention, the quantum well epitaxial structure includes an n-type semiconductor material layer, an active layer, and a p-type semiconductor material layer; the active layer material includes one or more of aluminum gallium nitride, indium gallium nitride, aluminum gallium arsenide, indium gallium arsenide, gallium indium phosphide, and aluminum indium phosphide.

[0012] According to an embodiment of the present invention, it further includes: a metal electrode layer formed on the surface of the quantum well epitaxial structure away from the substrate; the material of the metal electrode layer includes one or more of aluminum, silver, nickel, gold, platinum, chromium, titanium or copper.

[0013] According to embodiments of the present invention, the diameter or length and width dimensions of the light-emitting unit or the detector unit of the thermally modulated self-emitting and self-receiving micron-scale semiconductor device are 0.5 μm to 100 μm.

[0014] One aspect of this invention provides a method for fabricating a thermally modulated self-generating and self-receiving micron-scale semiconductor device for optical interconnect applications, comprising: fabricating a quantum well epitaxial structure on a substrate; fabricating a thermal modulation layer around the active region of the quantum well epitaxial structure by electron beam evaporation deposition and patterning via a lift-off process, wherein the thermal modulation layer is configured to directly heat the active region using the Joule effect when a voltage is applied, thereby controlling the temperature of the active region.

[0015] The thermally modulated self-emitting and self-receiving micron-scale semiconductor device and its fabrication method for optical interconnect applications provided by this invention have at least the following technical advantages:

[0016] This semiconductor device integrates miniature heating resistors at the chip level to control the temperature of the active region of the detector. Since the responsivity and detection capability of the detector are related to the band gap, the band gap will decrease as the temperature increases, which reduces the range of photon energy that the material can respond to. This improves the spectral response curve of the Micro-LED device as a detection unit, shifting it towards longer wavelengths and thus improving its responsivity in its emission spectrum.

[0017] The thermal modulation layer is directly disposed in the active region, enabling rapid, precise, and programmable local temperature control by applying voltage and utilizing the Joule effect (the heating effect generated when current flows through a resistor) to directly heat the active region. Furthermore, by applying a short, high-amplitude voltage pulse, the Joule effect is used for instantaneous heating. This single-pulse heating mode consumes less energy, has a faster reset speed, and achieves low-power, high-efficiency device reset.

[0018] By adjusting the heating power using miniature heating resistors, the operating state of the detector can be actively adjusted, allowing for the study or optimization of key parameters such as the detector's responsivity and dark current at different temperatures.

[0019] Typically composed of two different metals (such as Ti / Pt, Cr / Au), the resistivity can be precisely controlled by adjusting the layer thickness ratio. For example, the Ti layer serves as a transition layer, enhancing adhesion and mechanical properties; the Pt layer provides a reference resistance and stability, a high melting point, oxidation resistance, and excellent resistance-temperature linearity, forming the basis for precision measurements. Using conductive thermal resistance wires, the fine filament structure achieves high resistance within a limited area, reducing the heating area and energy consumption. The thermal resistance wires can be bent or cross-arranged to adapt to complex active region shapes, improving temperature uniformity. Furthermore, in quantum well epitaxial infrared detectors, the thermal modulation layer employs a double-layer metal structure or conductive thermal resistance wires with a thickness ≤1μm. By optimizing material combinations and micro / nano-scale structures, a comprehensive advantage of low power consumption, fast response, and high integration is achieved.

[0020] The thermal modulation layer is arranged in a rectangular shape around the active area, directly covering a portion of the active area (such as the edge or a specific functional area), and achieving better temperature gradient control through localized heating. The thermal modulation layer surrounds the active area in a ring or spiral shape, forming a thermal shielding structure, while uniformly heating the entire area through heat conduction.

[0021] In optical interconnect applications, Micro-LEDs can be used as both transmitter light source chips and receiver detection chips. When Micro-LEDs transmit data signals as transmitters or receivers, the thermal modulation function of the micro heating wire can be activated as needed. Attached Figure Description

[0022] The above-described features, other objects, and advantages of the present invention will become clearer from the following description of embodiments of the invention with reference to the accompanying drawings, in which:

[0023] Figure 1 The diagram schematically illustrates a front view of a thermally modulated self-emitting and self-receiving micron-scale semiconductor device for optical interconnect applications according to an embodiment of the present invention.

[0024] Figure 2The diagram schematically illustrates a front view of a thermally modulated self-emitting and self-receiving micron-scale semiconductor device for optical interconnect applications according to an embodiment of the present invention.

[0025] Figure 3 The diagram schematically illustrates a front view of a thermally modulated self-emitting and self-receiving micron-scale semiconductor device for optical interconnect applications according to an embodiment of the present invention.

[0026] Figure 4 A flowchart illustrating a method for fabricating a thermally modulated self-emitting micron-scale semiconductor device for optical interconnect applications according to an embodiment of the present invention is shown. Detailed Implementation

[0027] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the invention. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the invention for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0028] In the process of developing this invention, it was discovered that the detection spectral range is generally smaller than the emission spectral range. To address this issue, this invention proposes a novel device structure that can be monolithically integrated with a self-emitting and self-receiving Micro-LED device, enabling rapid local temperature control and thus effectively improving the responsivity of the detection unit. Specific embodiments are described below.

[0029] Figure 1 The diagram schematically illustrates a front view of a thermally modulated self-emitting and self-receiving micron-scale semiconductor device for optical interconnect applications according to an embodiment of the present invention.

[0030] like Figure 1 As shown, the thermally modulated self-emitting micron-scale semiconductor device for substrate-to-optical interconnect applications in this embodiment may include a substrate 100, a quantum well epitaxial structure 200, and a thermal modulation layer 300. The quantum well epitaxial structure is formed on the substrate, and the thermal modulation layer is disposed around the active region of the quantum well epitaxial structure.

[0031] According to an embodiment of the present invention, the thermal modulation layer 300 is configured to directly heat the active region using the Joule effect when a voltage is applied, so as to regulate the temperature of the active region.

[0032] According to an embodiment of the present invention, as temperature increases, atomic vibrations intensify, the lattice constant increases, and the interatomic distance increases. This weakens the atomic potential field experienced by electrons, leading to a decrease in conduction band energy and an increase in valence band energy, thereby increasing the band gap E. gThe temperature decreases. Meanwhile, phonons are energy quanta of lattice vibrations; as temperature increases, the number of phonons increases, and lattice vibrations become more intense. Electrons in semiconductors do not move in a static periodic potential field, but rather interact strongly with these constantly vibrating phonons, a phenomenon known as scattering. This electron-phonon coupling effect renormalizes the electron energy, shifting the conduction band bottom energy downward and the valence band top energy upward, thus increasing the band gap E. g Significantly narrower. For most common semiconductor materials (such as GaAs, InP, GaN), Enarrower is significantly narrower near room temperature. g The empirical formula for temperature T is the Varshni formula:

[0033]

[0034] Due to E g The decrease in (T) lowers the minimum photon energy required to produce intrinsic absorption. This means that some longer wavelength photons that could not be absorbed or generate photocurrent before now have energies (hν) greater than the decreased E. g This allows it to be absorbed and generate a photoelectric response. Therefore, the long-wavelength cutoff wavelength λ of the detector... c The absorption coefficient α(hν) of a semiconductor, a function of photon energy, rises sharply near the absorption edge. Increased temperature leads to E... g As the absorption coefficient decreases, the entire absorption coefficient spectrum curve shifts towards lower energy levels, i.e., longer wavelengths. Since the spectral responsivity is directly related to the absorption coefficient, stronger absorption usually results in higher quantum efficiency, which directly leads to a shift in the wavelength corresponding to the peak responsivity towards longer wavelengths.

[0035] Therefore, by integrating miniature heating resistors at the chip level to control the temperature of the active region of the detector, since the responsivity and detection capability of the detector are related to the bandgap, the bandgap will decrease as the temperature increases, which reduces the range of photon energy that the material can respond to. This improves the spectral response curve of the Micro-LED device as a detection unit, shifting it towards longer wavelengths and thus improving its responsivity in its emission spectrum.

[0036] In some embodiments, the substrate 100 is the base material of the entire device and may include one or more of the following: silicon substrate, sapphire substrate, silicon carbide substrate, gallium arsenide substrate, indium phosphide substrate, gallium phosphide substrate, gallium nitride substrate, and telluride substrate.

[0037] In some embodiments, the quantum well epitaxial structure 200 may include a first semiconductor material layer, a second semiconductor material layer, and a third semiconductor material layer.

[0038] A first semiconductor material layer is located on a first surface of the substrate. A second semiconductor material layer is located on the side of the first semiconductor material layer away from the substrate. A third semiconductor material layer is located on the side of the second semiconductor material layer away from the substrate.

[0039] Furthermore, when a thermally modulated self-emitting micron-scale semiconductor device is used as a detection unit, the first semiconductor material layer can be an n-type semiconductor material layer, the second semiconductor material layer can be an active layer, and the second semiconductor material layer can be a p-type semiconductor material layer; or, the first semiconductor material layer can be a p-type semiconductor material layer, the second semiconductor material layer can be an active layer, and the second semiconductor material layer can be an n-type semiconductor material layer.

[0040] The active layer material may include one or more of aluminum-doped gallium nitride, indium-doped gallium nitride, aluminum-doped gallium arsenide, indium-doped gallium arsenide, gallium-doped indium phosphide, and aluminum-doped indium phosphide.

[0041] In some embodiments, the thermal modulation layer may include a bilayer metal structure or a conductive thermal resistance wire. The thickness of the thermal modulation layer is less than or equal to 1 μm. The material of the thermal modulation layer includes one or more of platinum, tungsten, titanium, nickel, chromium, gold, or copper.

[0042] The thermal modulation layer is arranged in a rectangular or surrounding shape around the active area. The thermal modulation layer is powered by either pulsed or constant power, and the temperature of the active area is controlled within the range of 0℃ to 150℃. During data transmission in optical interconnect applications, the thermal modulation layer can activate the thermal modulation mode as needed during data transmission or reception.

[0043] In some embodiments, the thermally modulated self-emitting and self-receiving micron-scale semiconductor device may further include: an insulating dielectric layer formed on the upper and lower surfaces of the thermal modulation layer to isolate the thermal modulation layer and enable the thermal modulation layer to operate independently. For example, when the thermally modulated self-emitting and self-receiving micron-scale semiconductor device is used as a detection unit, the insulating dielectric layer is located between the third semiconductor material layer and the surface structure layer, and between the overlapping areas of the surface structure layer and the wiring of the thermal modulation layer.

[0044] The thermal modulation layer acts as a micro heater, isolated from other material layers of the device by an insulating dielectric layer, and operates independently. It generates current by applying voltage, resulting in a local temperature rise in the device.

[0045] In some embodiments, the thermally modulated self-emitting and self-receiving micron-scale semiconductor device may further include: a metal electrode layer, a transparent conductive layer, and an insulating passivation layer. The metal electrode layer is formed on the surface of the quantum well epitaxial structure away from the substrate; the material of the metal electrode layer includes one or more of aluminum, silver, nickel, gold, platinum, chromium, titanium, or copper. The transparent conductive layer is in ohmic contact with the metal electrode layer to regulate the uniformity of electrical injection. The insulating passivation layer serves as a sidewall protection layer for the resonant cavity micro-LED array device, preventing direct electrical interconnection between the p-type semiconductor material layer, the active layer, and the n-type semiconductor material layer caused by subsequent metal electrode deposition. In some embodiments, the diameter or length and width dimensions of the light-emitting or detection unit of the thermally modulated self-emitting and self-receiving micron-scale semiconductor device are 0.5 μm to 100 μm.

[0046] To more clearly illustrate the thermally modulated self-generating and self-receiving micron-scale semiconductor device of the present invention, specific examples are provided below.

[0047] Figure 2 The diagram schematically illustrates a front view of a thermally modulated self-emitting and self-receiving micron-scale semiconductor device for optical interconnect applications according to an embodiment of the present invention.

[0048] Figure 3 The diagram schematically illustrates a front view of a thermally modulated self-emitting and self-receiving micron-scale semiconductor device for optical interconnect applications according to an embodiment of the present invention.

[0049] like Figure 2 and Figure 3 As shown, substrate 1 is a sapphire substrate. Sapphire substrates have weak thermal conductivity, which can be used to achieve thermal isolation of devices, reduce heating power consumption and improve temperature control efficiency.

[0050] The quantum well epitaxial structure can be an InGaN / GaN quantum well epitaxial structure, which can include a GaN buffer layer 2, an n-GaN functional layer 3, an InGaN and GaN quantum well layer 4, and a p-GaN cap layer 5, forming the main body of the detector.

[0051] The GaN buffer layer 2 can be a semiconductor without other doping elements. The n-GaN functional layer 3 can be an N-type doped semiconductor, in which a small number of impurity elements with more valence electrons than matrix atoms are doped into a pure intrinsic semiconductor, resulting in an impurity semiconductor with a significantly higher free electron concentration than hole concentration. The InGaN and GaN quantum well layers 4 can be formed by alternating growth of thin semiconductor materials with different bandgap widths, with a narrow bandgap material sandwiched between a wide bandgap material, which imposes quantum confinement on the movement of charge carriers in a certain dimension, thereby producing significant quantum effects. The p-GaN cap layer 5 is an impurity semiconductor in which a small number of impurity elements with fewer valence electrons than matrix atoms are doped into a pure intrinsic semiconductor, resulting in an impurity semiconductor with a significantly higher hole concentration than free electron concentration.

[0052] Indium tin oxide (ITO) 6 is mainly used for ohmic contact with metal electrodes and to ensure the uniformity of electrical injection.

[0053] The micro heater 10 can be formed by electron beam evaporation deposition of a Ti / Pt (30 / 200 nm) bilayer metal structure or other metal systems such as Cr, Cu, Au that can be used as conductive thermal resistance wires, and patterned by a lift-off process.

[0054] The metal electrode layer includes a metal N-electrode 7 and a metal P-electrode 9, used for powering the self-generating and self-receiving micron-scale semiconductor device. A micro-heater metal positive electrode 11 and a micro-heater metal negative electrode 12 are used to power the micro-heater 10. Insulating dielectric layers such as silicon dioxide (SiO2) are deposited above and below the micro-heater 10 for electrical isolation, and metal interconnects are fabricated to connect the metal N-electrode 7, metal P-electrode 9, and micro-heater metal negative electrode 12 to pads located on a thick substrate frame.

[0055] The insulating passivation layer 8 serves as a sidewall protection layer, preventing direct electrical interconnection between the P-type doped semiconductor, the N-type doped semiconductor, and the quantum well region caused by subsequent metal electrode deposition, thus achieving good electrical isolation.

[0056] Figure 4 A flowchart illustrating a method for fabricating a thermally modulated self-emitting micron-scale semiconductor device for optical interconnect applications according to an embodiment of the present invention is shown.

[0057] like Figure 4 As shown, the preparation method of this embodiment may include operations S410 to S420.

[0058] Using S410, a quantum well epitaxial structure is fabricated on a substrate.

[0059] In operation S420, a thermal modulation layer is prepared around the active region of the quantum well epitaxial structure by electron beam evaporation deposition and patterning through a lift-off process.

[0060] In one example, a method for fabricating a thermally modulated self-generating and self-receiving micron-scale semiconductor device for optical interconnect applications may include the following operations.

[0061] Epitaxial structure: GaN functional layers are grown on sapphire substrates using metal-organic chemical vapor deposition (MOCVD), including GaN buffer layers, n-GaN, p-GaN, and InGaN / GaN quantum wells.

[0062] Patterned ITO: An ITO layer is deposited using sputtering on the epitaxial layer. Photoresist is used as a mask, and the ITO layer is etched using an ITO etching solution to form a patterned ITO.

[0063] Mesa etching: Using photoresist as an etching mask, dry etching is performed on the epitaxial layer using methods such as inductively coupled plasma (ICP) to etch part of the epitaxial layer and form a patterned mesa.

[0064] Sidewall passivation: SiO2 and other passivation layers are deposited as sidewall insulating protective layers using methods such as plasma enhanced chemical vapor deposition (PECVD).

[0065] Metal deposition for micro heaters: After depositing an insulating passivation layer, photolithography is performed, using photoresist as a mask for metal stripping. Subsequently, the metal required for the micro heater is deposited, and the photoresist is removed using a blue film, a stripping agent, etc.

[0066] Metal electrode deposition: After depositing an insulating passivation layer, photolithography is performed, using photoresist as a mask for metal stripping. Subsequently, metal electrodes and the metal required for the wires are deposited, and the photoresist is removed using a blue film, a stripping agent, etc.

[0067] Metal electrode thermal annealing: This process improves the interface characteristics between metal and semiconductor through high-temperature treatment, optimizes ohmic contact characteristics, reduces the impact of parasitic resistance, and enhances device speed and energy efficiency.

[0068] It should be noted that for details not covered in the preparation method examples, please refer to the semiconductor device examples; specific details will not be repeated here.

[0069] The embodiments of the present invention have been described above. However, these embodiments are merely illustrative and not intended to limit the scope of the invention. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. The scope of the invention is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of the invention, and all such substitutions and modifications should fall within the scope of the invention.

Claims

1. A thermally modulated, self-transmitting, micron-scale semiconductor device for optical interconnect applications, characterized in that, include: Substrate; A quantum well epitaxial structure is formed on the substrate; A thermal modulation layer is disposed around the active region of the quantum well epitaxial structure. The thermal modulation layer is configured to directly heat the active region using the Joule effect when a voltage is applied, so as to regulate the temperature of the active region.

2. The thermally modulated self-emitting and self-receiving micron-scale semiconductor device according to claim 1, characterized in that, The thermal modulation layer comprises a double-layer metal structure or a conductive thermal resistance wire, and the thickness of the thermal modulation layer is less than or equal to 1 μm.

3. The thermally modulated self-emitting and self-receiving micron-scale semiconductor device according to claim 2, characterized in that, The material of the heat modulation layer includes one or more of platinum, tungsten, titanium, nickel, chromium, gold, or copper.

4. The thermally modulated self-emitting and self-receiving micron-scale semiconductor device according to any one of claims 1 to 3, characterized in that, The thermal modulation layer is arranged in a rectangular or surrounding shape around the active region. The power supply method of the thermal modulation layer includes pulse power supply or constant power supply, and the temperature range of the active region is adjusted to 0℃~150℃.

5. The thermally modulated self-emitting and self-receiving micron-scale semiconductor device according to claim 1, characterized in that, Also includes: An insulating dielectric layer is formed on the upper and lower surfaces of the thermal modulation layer to isolate the thermal modulation layer and enable the thermal modulation layer to work independently.

6. The thermally modulated self-emitting and self-receiving micron-scale semiconductor device according to claim 1, characterized in that, The substrate includes one or more of the following: silicon substrate, sapphire substrate, silicon carbide substrate, gallium arsenide substrate, indium phosphide substrate, gallium phosphide substrate, gallium nitride substrate, and telluride substrate.

7. The thermally modulated self-emitting and self-receiving micron-scale semiconductor device according to claim 1, characterized in that, The quantum well epitaxial structure includes an n-type semiconductor material layer, an active layer, and a p-type semiconductor material layer stacked sequentially, or a p-type semiconductor material layer, an active layer, and an n-type semiconductor material layer stacked sequentially. The active layer material includes one or more of aluminum-doped gallium nitride, indium-doped gallium nitride, aluminum-doped gallium arsenide, indium-doped gallium arsenide, gallium-doped indium phosphide, and aluminum-doped indium phosphide.

8. The thermally modulated self-emitting and self-receiving micron-scale semiconductor device according to claim 7, characterized in that, Also includes: A metal electrode layer is formed on the surface of the quantum well epitaxial structure away from the substrate; the material of the metal electrode layer includes one or more of aluminum, silver, nickel, gold, platinum, chromium, titanium, or copper; A transparent conductive layer, in ohmic contact with the metal electrode layer, is used to adjust the uniformity of electrical injection; An insulating passivation layer serves as a sidewall protection layer for the resonant cavity micro-LED array device, preventing direct electrical interconnection between the p-type semiconductor material layer, the active layer, and the n-type semiconductor material layer caused by subsequent evaporation of metal electrodes.

9. The thermally modulated self-emitting and self-receiving micron-scale semiconductor device according to claim 1, characterized in that, The diameter or length and width dimensions of the light-emitting unit or detector unit of the thermally modulated self-emitting and self-receiving micron-sized semiconductor device are 0.5 μm to 100 μm.

10. A method for fabricating a thermally modulated, self-emitting, self-receiving micron-scale semiconductor device for optical interconnect applications, characterized in that, include: Quantum well epitaxial structures are fabricated on substrates; A thermal modulation layer is prepared around the active region of the quantum well epitaxial structure by electron beam evaporation deposition and patterning via a lift-off process. The thermal modulation layer is configured to directly heat the active region using the Joule effect when a voltage is applied, thereby controlling the temperature of the active region.

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