Substrate processing apparatus and substrate processing method

Abstract

The present application relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus of the present application includes: a substrate holding section; a nozzle; a liquid flow path that guides a processing liquid to the nozzle; an adjustment valve that adjusts a flow rate of the processing liquid flowing through the liquid flow path; a nozzle moving apparatus that moves the nozzle to a plurality of portions of a substrate; and a control section that controls the nozzle moving apparatus based on nozzle moving conditions and controls the adjustment valve based on valve conditions. The nozzle moving conditions include a plurality of portion moving information that determines a moving speed of the nozzle when the nozzle is moved to the plurality of portions of the substrate. The valve conditions include a plurality of valve control information that indicates a control method of the adjustment valve when the nozzle is moved to the plurality of portions of the substrate. The plurality of valve control information includes first valve control information and second valve control information that is different from the first valve control information.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method for performing a specified treatment on a substrate using a processing solution. Background Technology

[0002] Substrate processing apparatus is used to perform various processing on substrates such as semiconductor substrates, substrates for FPD (Flat Panel Display) devices such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, substrates for optical discs, substrates for magnetic disks, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, or substrates for solar cells.

[0003] As an example of such a substrate processing apparatus, Japanese Patent Application Publication No. 2019-54104 discloses a substrate processing apparatus for performing a specific treatment using a processing liquid on one side of a substrate. In this substrate processing apparatus, while the substrate is rotated and held by a rotating holding unit, a processing liquid is sprayed from a nozzle onto the surface of the substrate. By moving the nozzle in a direction intersecting the rotation center of the substrate in this state, the arrival position of the processing liquid moves on the substrate. As a result, processing liquid is supplied to the entire surface of the substrate, and one side of the substrate is processed.

[0004] Japanese Patent Application Publication No. 2019-54104 also describes a speed distribution related to the moving speed of the processing liquid at the arrival position (hereinafter referred to as the liquid position moving speed) in order to improve the uniformity of the processing on one side of the substrate. Summary of the Invention

[0005] However, excessive consumption of the processing solution used in substrate processing increases the cost of substrate processing. Furthermore, when using pharmaceutical solutions and organic solvents as processing solutions, from an environmental protection perspective, it is preferable to minimize the unnecessary consumption of such processing solutions.

[0006] Therefore, for example, the processing liquid is supplied at a first flow rate required for the process to the portion of one side of the substrate that is to be processed (e.g., the portion forming the circuit pattern). Furthermore, the processing liquid is supplied at a second flow rate lower than the first flow rate to the portion of one side of the substrate that is not to be processed (e.g., the portion not forming the circuit pattern). In these cases, unnecessary consumption of the processing liquid can be reduced.

[0007] However, as mentioned above, when processing liquid is supplied to multiple portions of the substrate at different flow rates, the control of the flow rate of the processing liquid to be supplied to the substrate may not follow the liquid position movement speed, depending on the type of processing liquid and the magnitude of the liquid position movement speed. If an appropriate amount of processing liquid is not supplied to the multiple portions of the substrate, it becomes difficult to process the substrate with high precision.

[0008] The purpose of this invention is to provide a substrate processing apparatus and method that can reduce the wasteful consumption of processing liquid and perform substrate processing with high precision.

[0009] A substrate processing apparatus according to one aspect of the present invention includes: a substrate holding unit for holding and rotating a substrate; a nozzle for ejecting a processing liquid downwards; a processing liquid supply system including a liquid flow path connected to the nozzle and a valve for adjusting the flow rate of the processing liquid flowing through the liquid flow path, for supplying the processing liquid to the nozzle; a movement drive unit for maintaining the nozzle at a position above the substrate held by the substrate holding unit and for moving it to a plurality of radially different portions on the upper surface of the substrate; and a control unit for controlling the movement drive unit based on nozzle movement conditions and controlling the valve based on valve conditions; and the nozzle movement conditions... The system includes multiple parts movement information, which determines the movement speed of the nozzle as the multiple parts of the substrate move respectively to supply the processing liquid to each of the multiple parts of the substrate; the valve conditions include multiple valve control information, which indicates the valve control method when the nozzle moves respectively in the multiple parts; the multiple valve control information includes: first valve control information corresponding to one of the multiple parts of the substrate; and second valve control information corresponding to other parts of the multiple parts of the substrate and different from the first valve control information.

[0010] According to another aspect of the present invention, a substrate processing method is a substrate processing method using a substrate processing apparatus to process a substrate; and the substrate processing apparatus includes: a nozzle for spraying a processing liquid downwards; a liquid flow path connected to the nozzle; and a valve for adjusting the flow rate of the processing liquid flowing through the liquid flow path; the substrate processing method includes the following steps: holding the substrate by a substrate holding portion and rotating it; based on nozzle movement conditions, maintaining the nozzle at a position above the substrate held by the substrate holding portion and moving it to a plurality of radially different portions on the upper surface of the substrate; and based on valve conditions, adjusting the flow of the liquid through the liquid flow path to the nozzle at the specified points. The flow rate of the treatment fluid; the nozzle movement conditions include multiple part movement information, which determines the movement speed of the nozzle when the multiple parts of the substrate move respectively to supply the treatment fluid to each of the multiple parts of the substrate; the valve conditions include multiple valve control information, which indicates the valve control method when the nozzle moves respectively in the multiple parts; the multiple valve control information includes: first valve control information, corresponding to a part of the multiple parts of the substrate; and second valve control information, corresponding to other parts of the multiple parts of the substrate and different from the first valve control information.

[0011] According to the present invention, the wasteful consumption of processing liquid can be reduced, and the substrate can be processed with high precision. Attached Figure Description

[0012] Figure 1 This is a schematic diagram illustrating the configuration of a substrate processing apparatus according to one embodiment of the present invention.

[0013] Figure 2 yes Figure 1 A schematic top view of the substrate processing apparatus.

[0014] Figure 3 This is a diagram illustrating an example of nozzle movement conditions and target flow rate conditions.

[0015] Figure 4 This is a graph showing the results of the first comparative experiment.

[0016] Figure 5 It means and Figure 3 Nozzle movement conditions and Figure 3 A diagram showing an example of valve conditions corresponding to the target flow rate conditions.

[0017] Figure 6 It means based on Figure 3 and Figure 5 This figure shows an example of the variation in the flow rate of the liquid ejected from the nozzle at multiple parts of the substrate under various etching conditions.

[0018] Figure 7 It means based on Figure 4 The figure shows an example of the flow rate variation of the liquid medicine ejected from the nozzle when the adjustment valve is controlled by feedback in all areas of the substrate under the target flow conditions.

[0019] Figure 8 It means Figure 1 A schematic block diagram of the control system of the substrate processing device.

[0020] Figure 9 This is a block diagram illustrating an example of the configuration of a functional unit for performing control based on nozzle movement conditions, target flow conditions, valve conditions, and basic operating conditions.

[0021] Figure 10 It means Figure 9 The flowchart of the processing flow of multiple functional departments.

[0022] Figure 11 These are diagrams used to illustrate other examples of target flow conditions and valve conditions.

[0023] Figure 12 This is a graph showing the results of the second comparative experiment.

[0024] Figure 13 This is another example of a diagram used to illustrate valve conditions.

[0025] Figure 14 It means possessing Figure 1 A schematic top view of an example of a substrate processing system of a substrate processing apparatus.

[0026] Figure 15 This is a schematic diagram illustrating an example of a liquid supply system according to another embodiment. Detailed Implementation

[0027] Hereinafter, a substrate processing apparatus and a substrate processing method according to one embodiment of the present invention will be described with reference to the accompanying drawings. In the following description, substrate refers to substrates used in FPD (Flat Panel Display) devices or Electro Luminescence display devices, semiconductor substrates, optical disc substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, or solar cell substrates, etc.

[0028] Furthermore, the substrate described below has a circular shape when viewed from above, except for the portion forming the notch. Additionally, the substrate has a circuit forming surface (front) where a circuit pattern is formed or a predetermined circuit pattern is formed, and a surface opposite to the circuit forming surface (back). In the following description, the front and back surfaces of the substrate are not limited to; the surface facing upwards is referred to as the upper surface of the substrate, and the surface facing downwards is referred to as the lower surface of the substrate.

[0029] Furthermore, the substrate processing apparatus described below processes the substrate using a processing liquid. During this processing, a nozzle that ejects the processing liquid scans above a substrate that is held and rotated in a horizontal position. This supplies the processing liquid to the entire upper surface of the substrate.

[0030] 1. Composition of the substrate processing apparatus

[0031] Figure 1 This is a schematic diagram illustrating the configuration of a substrate processing apparatus according to one embodiment of the present invention. Figure 2 yes Figure 1 A schematic top view of the substrate processing apparatus 1. Figure 2 In the middle, only show Figure 1 This is a portion of the constituent elements of the substrate processing apparatus 1. Furthermore, the substrate processing apparatus 1 of this embodiment includes a substrate holding device 10 for holding the substrate W. Figure 1 and Figure 2 In the image, along with several components of the substrate processing apparatus 1, a substrate W held by a substrate holding device 10 is shown.

[0032] In this embodiment, a silicon oxide film, a silicon nitride film, or a titanium nitride film is formed on the front side of the substrate W. Figure 1 The substrate processing apparatus 1 performs etching processing on the substrate W using the processing solution as a substrate processing solution.

[0033] like Figure 1 As shown, the substrate processing apparatus 1, in addition to the substrate holding device 10, also includes a cup device 20, a drain device 30, a nozzle 40, a nozzle moving device 50, a liquid supply system 60, and a control unit 90. Figure 1 At least a portion of the multiple components are housed within a chamber not shown. The chamber includes a bottom having, for example, a rectangular shape, and four sidewalls extending upward from the four sides of the bottom.

[0034] The substrate holding device 10 includes a substrate holding part 11 and a rotation drive part 12. The rotation drive part 12 is, for example, an electric motor, and is fixed to, for example, the bottom of a chamber. The rotation drive part 12 has a rotation shaft extending upward. The substrate holding part 11 is mounted on the upper end of the rotation shaft.

[0035] The substrate holding part 11 is a rotary chuck of the so-called mechanical chuck type that holds the outer peripheral end of the substrate W. Specifically, the substrate holding part 11 includes a circular plate-shaped rotating base 11a and multiple rotating retaining pins 11b disposed on the peripheral portion of the upper surface of the rotating base 11a. In the substrate holding part 11, the substrate W is disposed on the rotating base 11a with its front side facing upward. At this time, the center WC of the substrate W is positioned on the axis (central axis) of the rotation shaft of the rotary drive part 12. The peripheral portion of the lower surface and the outer peripheral end of the substrate W disposed on the rotating base 11a are held by the multiple retaining pins 11b. In this state, the substrate W is rotated in a horizontal position by the operation of the rotary drive part 12.

[0036] The substrate W is etched by supplying a chemical solution to the upper surface of the substrate W, which is held and rotated by the substrate holding device 10. A cup device 20 and a drain device 30 are used to catch the chemical solution that splashes from the rotating substrate W during the etching process and discharge it to the outside of the substrate processing device 1.

[0037] The cup device 20 includes a cup 21 and a cup drive unit 22. The cup 21 has a generally cylindrical shape to surround the substrate holding device 10 when viewed from above. Figure 2 The cup 21 is arranged to extend vertically. The cup 21 is configured to move vertically. The cup drive unit 22 includes an actuator such as an electric motor or a cylinder. The cup drive unit 22 moves the cup 21 between a predetermined upper cup position and a lower cup position according to the supply status of the liquid medicine to the substrate W.

[0038] The upper cup position is the height position (vertical position) of cup 21 when its upper end is above the substrate W held by the substrate holding part 11. Therefore, when cup 21 is in the upper cup position, liquid medicine splashed from the substrate W is caught by cup 21. On the other hand, the lower cup position is the height position of cup 21 when its upper end is below the substrate W held by the substrate holding part 11. Therefore, when cup 21 is in the lower cup position, the substrate W held by the substrate holding part 11 can be picked up from a side position.

[0039] A drainage device 30 is disposed below the cup 21 and includes an annular container corresponding to the cup 21. The container has an upward-facing annular opening through which the liquid medicine collected by the cup 21 is collected. The collected liquid medicine is guided, for example, through piping to a drainage or circulation system within the plant.

[0040] The nozzle 40 has an outlet for spraying liquid medicine. The nozzle 40 is supported by a nozzle moving device 50 with its outlet facing downwards, meaning it is capable of spraying liquid medicine downwards. The nozzle moving device 50 is as follows... Figure 2As shown, the device includes a base 53, a support shaft 54, and an arm 55. The base 53 is fixed to the bottom of the chamber, positioned outside the cup 21 when viewed from above. The support shaft 54 ​​extends upward from the base 53 by a certain distance. An arm 55 extending horizontally is mounted on the upper end of the support shaft 54. A nozzle 40 is mounted on the front end of the arm 55.

[0041] like Figure 1 As shown, the nozzle moving device 50 further includes a vertical driving unit 51 and a horizontal driving unit 52. Each of the vertical driving unit 51 and the horizontal driving unit 52 is built into, for example... Figure 2 The base portion 53 includes an actuator such as an electric motor or a cylinder.

[0042] The up-down drive unit 51 moves the support shaft 54 ​​in the up-down direction. As a result, the up-down drive unit 51 adjusts the height position of the nozzle 40 as needed. For example, during the etching process of the substrate W, the up-down drive unit 51 adjusts the height position of the nozzle 40 to a height position above the substrate W held by the substrate holding unit 11.

[0043] During the etching process of the substrate W, the horizontal drive unit 52 rotates the arm 55 about the axis of the support shaft 54. In this case, the nozzle 40 moves in a manner that traces an arc based on the support shaft 54 ​​when viewed from above. Thus, the nozzle 40 moves between a position above the substrate W held by the substrate holding unit 11 and a standby position WP to the side of the substrate W. Figure 2 In the diagram, the movable path of the nozzle 40 when viewed from above is shown by a double-dotted line. In the following description, the movable path of the nozzle 40 when viewed from above will be referred to simply as the movement path MP. The movement path MP extends from a portion of the outer peripheral end of the substrate W, through the center WC of the substrate W, to the remaining portion of the outer peripheral end of the substrate W.

[0044] Figure 1 During the etching process of the substrate W, the liquid supply system 60 supplies a chemical solution to the nozzle 40. For the chemical solutions used in this embodiment, hydrofluoric acid (HF), buffered hydrofluoric acid (BHF), diluted hydrofluoric acid (DHF), a mixture of sulfuric acid and hydrogen peroxide water (SPM), a mixture of ammonia water and hydrogen peroxide water (SC1), a mixture of hydrochloric acid and hydrogen peroxide water (SC2), diluted ammonium hydroxide (NH4OH), or tetramethylammonium hydroxide (TMAH) are used.

[0045] The type of etching solution used depends on the type of film formed on the substrate W, i.e., the type of film to be etched. For example, when etching a silicon nitride film, SPM is selected. When etching a titanium nitride film, SPM or SC1 is selected. When etching a silicon oxide film, HF is selected. When etching a polysilicon film, SC1 or TMAH is selected.

[0046] like Figure 1 As shown, the liquid supply system 60 includes a liquid supply source 61, a liquid flow path 62, a pump 63, an on / off valve 64, an adjusting valve 65, and a flow sensor 66. In this example, the liquid supply source 61 is a storage tank configured to store a certain amount of the etching solution used for the substrate W. The liquid supply source 61 is connected to the liquid flow path 62. Therefore, the liquid supply source 61 can also be replaced by piping and connectors for connecting factory utilities to the liquid flow path 62, instead of a storage tank.

[0047] Liquid flow path 62 is a flow path that guides the liquid medicine stored in liquid supply source 61 to nozzle 40, and is mainly formed by one or more pipes. The upstream end of liquid flow path 62 is connected to liquid supply source 61. The downstream end of liquid flow path 62 is connected to nozzle 40.

[0048] Pump 63, on / off valve 64, regulating valve 65, and flow sensor 66 are arranged sequentially in liquid flow path 62 from upstream to downstream. Pump 63 draws medicine stored in the storage tank of liquid supply source 61 and pressurizes the drawn medicine towards the downstream end of liquid flow path 62.

[0049] The on / off valve 64, for example, is a ball valve. When it is in the open state, it allows the flow of the medicinal liquid in the liquid flow path 62, and when it is in the closed state, it cuts off the flow of the medicinal liquid in the liquid flow path 62. The flow sensor 66 detects the amount of medicinal liquid flowing through the liquid flow path 62 per unit time, which is taken as the flow rate of the medicinal liquid flowing through the liquid flow path 62.

[0050] Furthermore, in this embodiment, the flow rate of the liquid medicine ejected from the nozzle 40 to the substrate W is related to... Figure 1 The flow rate of the treatment liquid flowing downstream of the regulating valve 65 in the liquid flow path 62 is equal to that of the liquid in the flow path 62. Therefore, the flow rate detected by the flow sensor 66 in this embodiment is equal to the flow rate of the liquid sprayed from the nozzle 40.

[0051] The regulating valve 65 is, for example, an electric needle valve, configured to adjust its opening degree according to the number of drive pulses provided from the control unit 90. The regulating valve 65 adjusts the flow rate of the liquid medicine flowing through the liquid flow path 62. The operation of the regulating valve 65 is controlled by the control unit 90 in various different methods. Details of these various control methods for the regulating valve 65 will be described later.

[0052] The control unit 90 controls multiple components of the substrate processing apparatus 1, including the adjustment valve 65, by etching the substrate W. Details of the control unit 90 will be described later.

[0053] 2. Basic operations during etching

[0054] exist Figure 1 In the substrate processing apparatus 1, as described above, an etching process is performed on the substrate W. In this example, the etching process involves dissolving a portion of the film formed on the front side of the untreated substrate W, thereby adjusting the thickness of the film to a predetermined design size. The etching process for one substrate W is performed, for example, as follows. Furthermore, in the initial state, the nozzle 40 is held in the standby position WP by the nozzle moving device 50.

[0055] First, the substrate W, which is transferred into the substrate processing apparatus 1, is held by the substrate holding part 11. At this time, the center WC of the substrate W is aligned with the axis of rotation of the rotation drive part 12. Next, the substrate W rotates together with the substrate holding part 11 by the operation of the rotation drive part 12. Furthermore, the cup 21 is held in the cup position by the operation of the cup drive part 22.

[0056] In this state, the nozzle 40 is moved to a position above the rotating substrate W by the nozzle moving device 50. Furthermore, the nozzle 40 is positioned at a predetermined starting position in the horizontal plane. This starting position can be either a position coinciding with the center WC of the substrate W when viewed from above, or a position coinciding with a portion near the outer periphery of the substrate W when viewed from above.

[0057] Next, liquid medicine is supplied from the liquid supply system 60 to the nozzle 40, and then sprayed from the nozzle 40 onto a portion of the substrate W. Furthermore, the nozzle 40 reciprocates on the substrate W within a certain range along the movement path MP at a predetermined number of repetitions. At this time, liquid medicine is supplied to multiple portions of the front side of the substrate W, dissolving the film on the substrate W. This adjusts the thickness of the film on each portion of the substrate W.

[0058] After the nozzle 40 reciprocates a certain number of times, the nozzle 40 is positioned at a predetermined end position in the horizontal plane. The end position can be a position that coincides with the center WC of the substrate W when viewed from above, or a position that coincides with the vicinity of the outer peripheral end of the substrate W when viewed from above.

[0059] Next, the supply of liquid medicine from the liquid supply system 60 to the nozzle 40 is stopped. That is, the supply of liquid medicine to the substrate W is stopped. In addition, the nozzle 40 is moved to the standby position WP by the nozzle moving device 50 and remains in the standby position WP.

[0060] Finally, the rotation of the substrate W by the rotation drive unit 12 is stopped, and the substrate W is removed from the substrate processing apparatus 1. Furthermore, the cup 21 is lowered from the upper cup position to the lower cup position by the operation of the cup drive unit 22.

[0061] Additionally, a cleaning solution supply device may be provided in the substrate processing apparatus 1 for rinsing the chemical solution supplied to the substrate W. In this case, the chemical solution adhering to the substrate W can be rinsed with the cleaning solution after etching. The substrate W, after being cleaned with the cleaning solution, can be dried by high-speed rotation (rotary drying process).

[0062] 3. Various conditions used for etching processes

[0063] (1) Nozzle movement conditions and target flow conditions

[0064] Imagine a situation where nozzle 40 moves at a certain speed along a moving path MP on a rotating substrate W. In this case, because the linear velocity of the substrate W at its periphery is higher than that at its center, the area of ​​the substrate W facing nozzle 40 per unit time varies depending on the position of nozzle 40 on the moving path MP. Furthermore, in the rotating substrate W, the temperature of the outer periphery and its vicinity tends to decrease more easily than that of the center WC and its vicinity. Additionally, due to the viscosity of the liquid, the way the liquid spreads on the substrate W varies depending on the velocity of the portion of the substrate W to which the liquid is supplied and the surrounding airflow.

[0065] For these reasons, the amount of film dissolved by etching in multiple sections of the rotating substrate W (processing amount) varies depending on the moving speed of the nozzle 40 as it moves in each section and the flow rate of the liquid ejected from the nozzle 40.

[0066] Furthermore, the required processing volume may differ across different portions of the substrate W. For example, on the front side of the substrate W, the region encompassing the central portion of the substrate W may be a region where a circuit pattern is formed or a region where a circuit pattern is intended to be formed. In the following description, the region on the front side of the substrate W where a circuit pattern is formed or a region where a circuit pattern is intended to be formed is referred to as the central region. Furthermore, the region on the front side of the substrate W that includes the outer peripheral end of the substrate W and surrounds the central region is referred to as the outer region.

[0067] In this case, a certain amount of processing liquid is required to be supplied in the central region of the substrate W, considering the processing volume required to form the circuit pattern. On the other hand, no circuit pattern is formed in the outer region of the substrate W. Therefore, there is no need to adjust the film thickness in the outer region of the substrate W. Therefore, from the viewpoint of reducing the consumption of the processing liquid, it is preferable to minimize the flow rate of the processing liquid to be supplied to the outer region of the front side of the substrate W. Furthermore, by reducing the flow rate of the processing liquid supplied to the outer region of the front side of the substrate W, it is also possible to prevent the processing liquid supplied to the outer region of the substrate W from colliding with the multiple holding pins 11b holding the substrate W and scattering.

[0068] Taking these points into consideration, in the substrate processing apparatus 1 of this embodiment, nozzle movement conditions for dissolving an ideal amount of film in multiple portions of the substrate W are specified. The nozzle movement conditions include the ideal movement speed of the nozzle 40 as multiple portion movement information when the multiple portions of the substrate W move respectively, and are determined, for example, based on simulation or experiment.

[0069] Furthermore, in the substrate processing apparatus 1 of this embodiment, target flow conditions are defined for dissolving an ideal amount of film in multiple portions of the rotating substrate W. The target flow conditions include multiple target flow information sets, which are defined as the ideal flow rates of the processing liquid to be supplied to each of the multiple portions of the substrate W, and are determined, for example, based on simulation or experimentation. In the following description, the flow rate shown in each of the multiple target flow information sets will be referred to as the target flow rate.

[0070] Figure 3 This is a diagram illustrating an example of nozzle movement conditions and target flow rate conditions. In Figure 3 The upper section shows a perspective view of the substrate W. Figure 2 and Figure 3 In the substrate W shown in the upper section, a dot pattern is added to the central region R1 of the upper surface of the substrate W (the front side of the substrate W in this example), and a shading line is added to the outer region R2. Additionally, in Figure 3 In subsequent diagrams, to facilitate understanding of the relationship between the central region R1 and the outer region R2, the outer region R2 is shown in an exaggerated manner. Furthermore, in... Figure 3 The upper section shows a virtual line on the substrate W corresponding to the movement path MP of the nozzle 40, indicated by a double-dotted line. Here, the virtual line is described as the movement path MP.

[0071] In the substrate processing apparatus 1 of this embodiment, as Figure 2 and Figure 3As shown in the previous paragraph, points p01 to p20 are defined to represent multiple (20 in this example) locations on the movement path MP. As the nozzle 40 reciprocates on the substrate W, it passes through points p01 to p20, and the nozzle outlet faces multiple portions of the substrate W. Therefore, in the following description, points p01 to p20 are considered as multiple portions on the substrate W.

[0072] Point p01 is located near a portion of the outer periphery of substrate W when viewed from above. Point p20 is located near the remaining portion of the outer periphery of substrate W when viewed from above. Points p02, p03, p04, p05, p06, p07, p08, p09, p10, p11, p12, p13, p14, p15, p16, p17, p18, and p19 are located between points p01 and p20, arranged sequentially at approximately equal intervals from point p01 toward point p20. Points p10 and p11 are adjacent to each other across the center WC of substrate W. Furthermore, in this example, points p04 to p17 are located in the central region R1 of substrate W, and points p01 to p03 and p18 to p20 are located in the outer region R2 of substrate W.

[0073] exist Figure 3 In the middle section, an example of nozzle movement conditions is shown in a graph. In the graph of nozzle movement conditions, the vertical axis represents the movement speed of nozzle 40, and the horizontal axis represents the position on the movement path MP. In the nozzle movement conditions of this example, the movement speed of nozzle 40 when it moves at points p01 to p20 is determined. According to the nozzle movement conditions, the movement speed of points p01 and p20 is 0. On the other hand, the movement speed of points p02 to p19 is determined to be relatively high. Their movement speed is, for example, about 150 m / sec to 600 m / sec. In addition, the movement speed of points p10 and p11, which are located near the center WC of substrate W among points p02 to p19, is higher than the movement speed of other points p02 to p09 and p12 to p17.

[0074] In the nozzle movement conditions of this example, the movement speed is generally higher at the center WC of the substrate W and its vicinity, and lower near the outer peripheral end of the substrate W. To uniformize the etching rate across the entire upper surface of the substrate W, the nozzle movement conditions are determined primarily by considering the temperature distribution of the rotating substrate W.

[0075] exist Figure 3The following section illustrates an example of target flow rate conditions using a graph. In the graph of target flow rate conditions, the vertical axis represents the target flow rate, and the horizontal axis represents the position on the movement path MP. In this example, the target flow rate conditions determine the target flow rate of the liquid that should flow through the liquid flow path 62 when the nozzle 40 moves at points p01 to p20 respectively. In other words, multiple target flow rates of the liquid that should be ejected from the nozzle 40 when it moves at points p01 to p20 respectively are determined. According to the target flow rate conditions, the target flow rates at points p01, p02, p19, and p20 are determined as the first flow rate fr1. On the other hand, the target flow rates at points p03 to p18 are determined as the second flow rate fr2, which is higher than the first flow rate fr1. The difference between the first flow rate fr1 and the second flow rate fr2 is relatively large. The first flow rate fr1 is, for example, 400 ml / min, and the second flow rate fr2 is, for example, 2000 ml / min.

[0076] Under the target flow conditions in this example, the target flow rate is generally higher in the central region R1 of substrate W and lower in the outer region R2 of substrate W. As described above, the purpose of the target flow conditions is to supply a sufficient amount of solution required for forming the circuit pattern in the central region R1 and to reduce the consumption of solution in the outer region R2.

[0077] Figure 1 The horizontal drive unit 52 includes a motor with a built-in encoder. Furthermore, Figure 1 The control unit 90 detects the current rotation angle of the motor based on the output signal of the encoder of the horizontal drive unit 52. Furthermore, based on the detection result of the motor's rotation angle, the control unit 90 obtains the current position (position on the upper surface of the substrate W) of the nozzle 40 on the movement path MP.

[0078] Therefore, the control unit 90 controls the horizontal drive unit 52 based on the current position of the nozzle 40 and the nozzle movement conditions. As a result, the control unit 90 adjusts the moving speed of the nozzle 40 to an ideal speed when each part of the substrate W moves. Furthermore, the control unit 90 controls the liquid supply system 60 based on the current position of the nozzle 40 and the target flow rate conditions. As a result, the control unit 90 adjusts the flow rate of the liquid supplied to each part of the substrate W to the target flow rate.

[0079] (2) Valve conditions

[0080] By controlling Figure 1 The regulating valve 65 adjusts the flow rate of the liquid medicine sprayed from the nozzle 40. Furthermore, as described above, the operation of the regulating valve 65 in this embodiment is controlled by the control unit 90 in various ways.

[0081] One of the various controls for the regulating valve 65 is feedback control, which adjusts the opening of the regulating valve 65 based on the detection results of the flow sensor 66, such that the flow rate of the liquid flowing through the liquid flow path 62 is close to the target flow rate at the current position of the nozzle 40. Another of the various controls for the regulating valve 65 is the control that adjusts the opening of the regulating valve 65 to a predetermined opening without relying on the detection results of the flow sensor 66. In the following description, the control that adjusts the opening of the regulating valve 65 to a predetermined opening will be referred to as fixed control.

[0082] In this embodiment, the specified opening degree is determined to correspond to the target flow rate. For example, if the target flow rate in a portion of the substrate W (e.g., point p02 on the movement path MP) is a first flow rate fr1, the specified opening degree of that portion is determined to be the opening degree of the adjusting valve 65 that estimates the flow rate of the liquid ejected from the nozzle 40 to become the first flow rate fr1. Furthermore, if the target flow rate in other portions of the substrate W (e.g., point p04 on the movement path MP) is a second flow rate fr2, the specified opening degree of that portion is determined to be the opening degree of the adjusting valve 65 that estimates the flow rate of the liquid ejected from the nozzle 40 to become the second flow rate fr2.

[0083] Here, feedback control involves adjusting the opening of the regulating valve 65 sequentially based on the detection results of the flow sensor 66. Therefore, when the flow rate of the liquid medicine is changed by feedback control of the regulating valve 65, it is assumed that changes in the actual flow rate of the liquid medicine ejected from the nozzle 40 are prone to causing a relatively large response delay. On the other hand, when the flow rate of the liquid medicine is changed by fixing the regulating valve 65, it is assumed that changes in the actual flow rate of the liquid medicine ejected from the nozzle 40 are less likely to cause a large response delay.

[0084] In order to compare the flow rate changes of the drug solution under feedback control with those under fixed control, the inventors used... Figure 1 The substrate processing apparatus 1 was subjected to the first comparative test as shown below.

[0085] First, the inventors operated pump 63 and simultaneously opened valve 64, adjusting the opening of regulating valve 65 based on the flow rate reading of flow sensor 66, which was approximately 250 ml / min. Then, by applying feedback control to regulating valve 65, the inventors increased the flow rate of the medicine downstream of regulating valve 65 from approximately 250 ml / min to 2000 ml / min. Furthermore, the inventors recorded the reading of flow sensor 66 at this time.

[0086] Next, the inventors adjusted the opening of the regulating valve 65 again, based on the flow rate sensor 66 reading of approximately 250 ml / min. Then, by maintaining a fixed control of the regulating valve 65, they increased the flow rate of the medicine downstream of the regulating valve 65 from approximately 250 ml / min to 2000 ml / min. Furthermore, they recorded the flow rate sensor 66 reading at this point.

[0087] Figure 4 This is a graph representing the results of the first comparative experiment. In Figure 4 In the diagram, the vertical axis represents the flow rate of the liquid medicine flowing downstream of the regulating valve 65, and the horizontal axis represents time. Furthermore, in... Figure 4 In the diagram, a thick solid line shows the change in the flow rate of the drug solution when the flow rate from nozzle 40 is increased from approximately 250 ml / min to 2000 ml / min through feedback control. On the other hand, a thick dashed line shows the change in the flow rate of the drug solution when the flow rate from nozzle 40 is increased from approximately 250 ml / min to 2000 ml / min through fixed control.

[0088] like Figure 4 As shown, in feedback control, it takes approximately 4 seconds to increase the flow rate of the drug solution from approximately 250 ml / min to 2000 ml / min. In contrast, in stationary control, it takes approximately 1.5 seconds to increase the flow rate of the drug solution from approximately 250 ml / min to 2000 ml / min.

[0089] The results clearly show that the fixed control of the adjusting valve 65 improves the responsiveness of the drug flow rate adjustment compared to the feedback control of the adjusting valve 65. Furthermore, it is believed that the greater the change in drug flow rate, the greater the difference in responsiveness between the two control methods. If insufficient drug flow rate adjustment responsiveness leads to an inadequate supply to the central region R1, poor substrate W processing may occur. Moreover, if the drug flow rate supplied to the outer region R2 cannot be sufficiently reduced, wasteful drug consumption cannot be suppressed.

[0090] Therefore, in the substrate processing apparatus 1 of this embodiment, valve conditions are further specified, which represent the control method of the adjustment valve 65 when the nozzle 40 moves in multiple parts of the substrate W respectively.

[0091] Figure 5 It means and Figure 3 Nozzle movement conditions and Figure 3 A diagram illustrating an example of valve conditions corresponding to the target flow rate conditions. Figure 5In the valve condition diagram, the vertical axis represents the valve control method, and the horizontal axis represents the position on the movement path MP. On the vertical axis, symbol CL1 represents fixed control, and symbol CL2 represents feedback control.

[0092] In the valve conditions of this example, multiple control methods should be executed for each movement of nozzle 40 at points p01 to p20. Based on the valve conditions, it is determined that fixed control of the adjusting valve 65 should be executed at points p01 to p04 and p17 to p20. Points p01 to p04 and p17 to p20 are located in the outer region R2 where the target flow rate is low and high-precision flow rate adjustment is not required, and in the region on the substrate W where the target flow rate fluctuates significantly. Furthermore, based on the valve conditions, it is determined that feedback control of the adjusting valve 65 should be executed at points p05 to p16. Points p05 to p16 are located in the central region R1 where the target flow rate is high and the target flow rate does not fluctuate.

[0093] Figure 6 It means based on Figure 3 and Figure 5 This figure shows an example of the flow rate variation of the liquid material ejected from nozzle 40 in multiple portions of the substrate W under various etching conditions. Figure 6 In the upper section of the graph, the flow rate of the liquid medicine is shown as the nozzle 40 moves from point p01 towards point p20. Additionally, the lower section of the graph shows the flow rate of the liquid medicine as the nozzle 40 moves from point p20 towards point p01.

[0094] exist Figure 6 In the upper and lower sections of the chart, the vertical axis represents the flow rate of the liquid medicine ejected from nozzle 40, and the horizontal axis represents the position on the movement path MP. Furthermore, the change in the flow rate of the liquid medicine ejected from nozzle 40 is shown as a thick solid line, and the ideal flow rate change of the liquid medicine according to the target flow rate conditions is shown as a single-dotted line.

[0095] like Figure 6 As shown in the previous paragraph, imagine the situation where nozzle 40 moves from point p01 towards point p20. In this case, control unit 90, for example, according to... Figure 3 The target flow rate condition is such that the flow rate of the liquid at points p01 and p02 becomes the first flow rate fr1, and the regulating valve 65 is fixedly controlled. Then, the control unit 90 adjusts the flow rate according to the nozzle 40 reaching point p03. Figure 3 Based on the target flow rate condition, the flow rate of the liquid medicine to be supplied to nozzle 40 at the current time is determined as the second flow rate fr2. Therefore, the control unit 90 performs fixed control on the adjusting valve 65 so that the flow rate of the liquid medicine changes from the first flow rate fr1 to the second flow rate fr2. Fixed control, as described above, improves the responsiveness of the liquid medicine flow rate adjustment. As a result, the flow rate of the liquid medicine ejected from nozzle 40 is close to the target flow rate before nozzle 40 enters the central region R1.

[0096] In addition, control unit 90, for example, according to Figure 3 The target flow rate condition is set so that the flow rate of the medicinal liquid at point p18 becomes the second flow rate fr2, and the regulating valve 65 is fixedly controlled. Then, the control unit 90 adjusts the flow rate according to the nozzle 40 reaching point p19. Figure 3 Based on the target flow rate condition, the flow rate of the liquid medicine to be supplied to nozzle 40 at the current time is determined as the first flow rate fr1. Therefore, the control unit 90 performs fixed control on the adjusting valve 65 so that the flow rate of the liquid medicine changes from the second flow rate fr2 to the first flow rate fr1. As described above, the fixed control improves the responsiveness of the liquid medicine flow rate adjustment. As a result, before nozzle 40 reaches point p20, the flow rate of the liquid medicine ejected from nozzle 40 is close to the target flow rate.

[0097] like Figure 6 As shown in the next section, imagine the case where nozzle 40 moves from point p20 toward point p01. In this case, the regulating valve 65 is also fixedly controlled as the target flow rate changes between the first flow rate fr1 and the second flow rate fr2 in the outer region R2 of substrate W. As a result, the flow rate of the liquid medicine ejected from nozzle 40 approaches the target flow rate with high responsiveness.

[0098] The results, according to Figure 5 The valve conditions prevent insufficient supply of drug solution to the central region R1 of substrate W due to low responsiveness of drug solution flow adjustment. Furthermore, in the outer region R2 of substrate W, drug solution consumption can be significantly reduced.

[0099] Furthermore, in the central region R1 of substrate W, the regulating valve 65 is largely controlled by feedback. This allows for high-precision adjustment of the flow rate of the liquid medicine ejected from nozzle 40 onto substrate W.

[0100] Here, an example will be given by reference to the case where the adjustment valve 65 is always under feedback control during the etching process of the substrate W. Figure 7 It means based on Figure 4 The figure shows an example of the flow rate variation of the liquid medicine ejected from the nozzle 40 under the condition that the regulating valve 65 is fed back to control the target flow rate in all areas of the substrate W.

[0101] In this reference mode, the control method of the adjusting valve 65 that should be executed when the nozzle 40 moves at each of points p01 to p20 is set to feedback control.

[0102] exist Figure 7In the upper and lower sections, an example of the change in the flow rate of the liquid medicine ejected from the nozzle 40 due to feedback control of the adjusting valve 65 is shown. The graph in the upper section shows the change in the flow rate of the liquid medicine as the nozzle 40 moves from point p01 to point p20. Similarly, the graph in the lower section shows the change in the flow rate of the liquid medicine as the nozzle 40 moves from point p20 to point p01.

[0103] When the flow rate of the liquid medicine is changed through feedback control of the regulating valve 65, the change in the actual flow rate of the liquid medicine sprayed from the nozzle 40 can easily cause a relatively large response delay. In this example, such as Figure 7 As shown in the upper and lower sections, the time required to change the flow rate of the medicine between the first flow rate fr1 and the second flow rate fr2 becomes longer.

[0104] In this situation, when the nozzle 40 moves over the central region R1 of the substrate W, the likelihood that the flow rate of the liquid ejected from the nozzle 40 will not reach the target flow rate (e.g., the second flow rate fr2) increases. Insufficient flow rate of liquid supplied to the central region R1 becomes a cause of poor processing of the substrate W.

[0105] Furthermore, in the outer region R2 of the substrate W, the possibility that the flow rate of the liquid ejected from the nozzle 40 does not reach the target flow rate (e.g., the first flow rate fr1) increases. Supplying excessive liquid to the outer region R2 will waste the liquid. Moreover, supplying excessive liquid to the outer region R2 will cause excess liquid to scatter near the outer peripheral end of the substrate W.

[0106] (3) Basic movement conditions

[0107] As described above, when the etching process of substrate W begins, nozzle 40 is positioned at a predetermined starting position on substrate W. Furthermore, during the etching process of substrate W, nozzle 40 reciprocates on substrate W at a predetermined number of repetitions. Furthermore, when the etching process of substrate W ends, nozzle 40 is positioned at a predetermined ending position on substrate W.

[0108] In the substrate processing apparatus 1 of this embodiment, multiple pieces of information, such as the start position of the nozzle 40, the number of reciprocating movements, and the end position of the nozzle 40, are further defined as basic operating conditions for the etching process.

[0109] The nozzle movement conditions, target flow rate conditions, valve conditions, and basic operating conditions are pre-stored in the control unit 90 before the etching process of the substrate W. Therefore, the control unit 90 performs the etching process based on the nozzle movement conditions, target flow rate conditions, valve conditions, and basic operating conditions.

[0110] 4. Control system of substrate processing apparatus 1

[0111] The control system of substrate processing apparatus 1, and Figure 1 The structure of the control unit 90 will be explained together. Figure 8 It means Figure 1 A schematic block diagram of the control system of the substrate processing apparatus 1. (See diagram below.) Figure 8 As shown, the control unit 90 includes a CPU (Central Processing Unit) 91, RAM (Random Access Memory) 92, ROM (Read Only Memory) 93, and a storage device 94. RAM 92 serves as the operating area of ​​the CPU 91. The system program is stored in the ROM 93. The storage device 94 includes a storage medium such as a hard disk or semiconductor memory, storing the etching program used to perform the etching process on the substrate W.

[0112] Alternatively, the etching process can be provided in a recording medium such as a CD-ROM 99 and installed into the ROM 93 or storage device 94. Or, the etching process can also be sent from a server outside the substrate processing apparatus 1 via a communication network and installed into the ROM 93 or storage device 94.

[0113] The CPU 91 executes a substrate cleaning procedure and controls the operation of each component of the substrate processing apparatus 1. Specifically, the control unit 90 controls the substrate holding device 10. Thus, the control unit 90 causes the substrate holding device 10 to hold the substrate W that has been brought into the substrate processing apparatus 1. Furthermore, in order to remove the substrate W from the substrate processing apparatus 1, the control unit 90 releases the substrate holding device 10 from holding the substrate W. Additionally, the control unit 90 causes the substrate W held by the substrate holding device 10 to rotate at a preset speed.

[0114] Furthermore, the control unit 90 controls the cup device 20. Thus, the control unit 90 causes... Figure 1 The cup 21 moves between a position above the cup and a position below the cup. Furthermore, the control unit 90 controls the vertical drive unit 51 and the horizontal drive unit 52 of the nozzle moving device 50. Thus, the control unit 90 moves the nozzle 40 between a position above the substrate W and a standby position WP. Additionally, the control unit 90 moves the nozzle 40 along the movement path MP from the position above the substrate W.

[0115] Furthermore, as described above, when the nozzle 40 is moved using the nozzle moving device 50, the control unit 90 obtains the current position of the nozzle 40 based on the output signals of the encoders of the up-down drive unit 51 and the horizontal drive unit 52.

[0116] Furthermore, the control unit 90 controls the opening and closing valve 64 and the adjusting valve 65 of the liquid supply system 60. Thus, the control unit 90 supplies the etching solution to the nozzle 40 during the etching process. Additionally, the control unit 90 obtains the detection results from the flow sensor 66.

[0117] The substrate processing apparatus 1 also includes an operation unit 70. The operation unit 70 includes, for example, a keyboard and pointing devices, and is configured to be operated by a user. By operating the operation unit 70, the user can input the nozzle movement conditions, target flow rate conditions, valve conditions, and basic operating conditions. The input conditions are stored in the storage device 94 of the control unit 90.

[0118] 5. Example of the configuration of multiple functional units in the control unit 90

[0119] Figure 9 This is a block diagram illustrating an example of the configuration of a functional unit used for control based on nozzle movement conditions, target flow conditions, valve conditions, and basic operating conditions. For example... Figure 9 As shown, the CPU 91 of the control unit 90, serving as a functional unit for performing control based on various conditions, includes an operation receiving unit 911, a movement condition acquisition unit 912, a flow condition acquisition unit 913, a valve condition acquisition unit 914, a basic condition acquisition unit 915, a horizontal movement control unit 916, and an adjustment valve control unit 917. These functional units are implemented by the CPU 91 of the control unit 90 executing etching programs stored in the storage device 94. Furthermore, some or all of these multiple functional units may also be implemented using hardware such as electronic circuits.

[0120] Operations Department 911 accepts applications from Figure 8 The operation unit 70 inputs nozzle movement conditions, target flow conditions, valve conditions, and basic operating conditions. Furthermore, the operation receiving unit 911 stores the received conditions in the storage device 94.

[0121] During the etching process of the substrate W, the movement condition acquisition unit 912 acquires the nozzle movement conditions stored in the storage device 94. Furthermore, the movement condition acquisition unit 912 provides the acquired nozzle movement conditions to the horizontal movement control unit 916.

[0122] During the etching process of the substrate W, the flow condition acquisition unit 913 acquires the target flow condition stored in the storage device 94. Furthermore, the flow condition acquisition unit 913 provides the acquired target flow condition to the regulating valve control unit 917.

[0123] When the substrate W is being etched, the valve condition acquisition unit 914 acquires the valve conditions stored in the storage device 94. Furthermore, the valve condition acquisition unit 914 provides the acquired valve conditions to the adjustment valve control unit 917.

[0124] When the substrate W is being etched, the basic condition acquisition unit 915 acquires the basic operating conditions stored in the storage device 94. Furthermore, the basic condition acquisition unit 915 provides the acquired basic operating conditions to the horizontal movement control unit 916.

[0125] When the etching process of substrate W begins, the horizontal movement control unit 916 controls the nozzle movement conditions and basic operation conditions provided by the movement condition acquisition unit 912 and the basic condition acquisition unit 915. Figure 8 Horizontal drive unit 52.

[0126] Furthermore, the horizontal movement control unit 916 detects the current position of the nozzle 40 on the movement path MP based on the output signal of the encoder of the horizontal direction drive unit 52. The horizontal movement control unit 916 then provides the detected current position of the nozzle 40 on the movement path MP to the regulating valve control unit 917.

[0127] Alternatively, the horizontal drive unit 52 may include a pulse motor instead of a motor with a built-in encoder. In this case, the horizontal movement control unit 916 controls the rotation angle of the pulse motor by providing one or more drive pulses to the horizontal drive unit 52. Therefore, the horizontal movement control unit 916 can also detect the rotation angle of the pulse motor by counting the number of drive pulses provided to the horizontal drive unit 52. Based on the rotation angle of the pulse motor, the horizontal movement control unit 916 can detect the current position of the nozzle 40 on the movement path MP.

[0128] During the etching process of the substrate W, the regulating valve control unit 917 controls the flow rate based on the target flow conditions, valve conditions, and the current position of the nozzle 40. Figure 8 The liquid supply system 60. Thus, the regulating valve 65 is controlled in a control method corresponding to the current position of the nozzle 40, so that the liquid is sprayed from the nozzle 40 at a flow rate that is consistent with or approximately consistent with the target flow rate.

[0129] Figure 10 It means Figure 9 A flowchart of the processing flow for multiple functional units. Additionally, in Figure 10 In the middle, because it mainly shows Figure 9 The processing of multiple functional parts is omitted, so descriptions related to the vertical movement of the nozzle 40 and the vertical movement of the cup 21 are omitted.

[0130] The etching process on the substrate W is initiated at a designated time by executing an etching procedure in the control unit 90. In the initial state, nozzle movement conditions, target flow rate conditions, valve conditions, and basic operating conditions are pre-stored in the storage device 94. Furthermore, the substrate W to be processed is held by the substrate holding unit 11. Additionally, the nozzle 40 is held in the standby position WP.

[0131] When the etching process of substrate W begins, Figure 9 Multiple acquisition units (912, 913, 914, 915) acquire nozzle movement conditions, target flow conditions, valve conditions, and basic operating conditions from storage device 94 (step S10). Next, CPU 91 of control unit 90 controls the rotation drive unit 12 of substrate holding device 10 to rotate substrate W at a specified speed (step S11).

[0132] Next, the horizontal movement control unit 916 controls the horizontal drive unit 52 based on the basic operating conditions to move the nozzle 40 to the starting position (step S12). When the nozzle 40 reaches the starting position, the horizontal movement control unit 916 begins to move the nozzle 40 according to the obtained nozzle movement conditions and basic operating conditions (step S13).

[0133] Next, the horizontal movement control unit 916 detects the current position of the nozzle 40 on the movement path MP based on the output signal of the encoder of the horizontal direction drive unit 52 or the count of drive pulses provided to the horizontal direction drive unit 52 (step S14).

[0134] Next, the regulating valve control unit 917 determines the flow rate of the liquid medicine to be supplied to the nozzle 40 at the current time based on the target flow rate conditions and the current position of the nozzle 40 (step S15).

[0135] Next, the regulating valve control unit 917 controls the regulating valve 65 according to the valve conditions, so that the liquid flows to the nozzle 40 at a predetermined flow rate (step S16). Then, the regulating valve control unit 917 determines whether to end the reciprocating movement of the nozzle 40 (step S17). Specifically, based on the basic operating conditions and the actual movement path of the nozzle 40 after the processing in step S13, the regulating valve control unit 917 determines whether the nozzle 40 has completed the preset number of reciprocating movements and is in the ending position.

[0136] If the reciprocating movement of nozzle 40 has not ended, the process returns to step S14. On the other hand, if the reciprocating movement of nozzle 40 has ended, the adjusting valve control unit 917 stops the supply of liquid medicine to nozzle 40 by controlling the opening and closing valve 64 (step S18).

[0137] Finally, the CPU 91 of the control unit 90 stops the rotation of the substrate W by controlling the rotation drive unit 12 of the substrate holding device 10 (step S27), and moves the nozzle 40 to the standby position WP (step S28). Thus, the drying process of the substrate W is completed.

[0138] 6. Effects

[0139] In the following description, the two portions arranged radially adjacent to each other in the outer region R2 of the substrate W are referred to as portion 1 and portion 2. Portion 1 is closer to the central region R1 than portion 2. Specifically, portion 1 is adjacent to... Figure 2 The parts corresponding to points p03 and p18 on the movement path MP. The second part is related to... Figure 2 The parts corresponding to points p02 and p19 on the movement path MP.

[0140] Under the target flow rate conditions set by the substrate processing apparatus 1, the target flow rate corresponding to the first portion of the central region R1 and the outer region R2 of the substrate W is higher than the target flow rate corresponding to the second portion of the outer region R2 of the substrate W. Furthermore, the adjusting valve 65 is feedback-controlled as the nozzle 40 moves through at least a portion of the central region R1 of the substrate W. This allows for the easy and precise supply of the amount of etching solution required for the etching process to the central region R1 of the substrate W. Therefore, the central region R1 of the substrate W is etched with high precision.

[0141] On the other hand, while the nozzle 40 moves in the outer region R2 of the substrate W, the adjusting valve 65 is fixedly controlled. In this case, because the target flow rate corresponding to the second part of the substrate W is lower than the target flow rate corresponding to the central region R1 and the first part of the substrate W, the amount of processing liquid supplied to the outer region R2 of the substrate W is reduced by setting the adjusting valve 65 to a predetermined opening. In other words, excessive processing liquid is prevented from being supplied to the non-circuit pattern forming region in the substrate W.

[0142] Furthermore, compared to feedback control, fixed control improves the responsiveness to changes in the flow rate of the liquid flowing through the liquid flow path 62. Therefore, when the nozzle 40 moves continuously in the first and second sections, the flow rate of the liquid supplied to the substrate W is less likely to experience a large response delay. As a result, the flow rate of the liquid supplied to the central region R1 of the substrate W is prevented from deviating significantly from the target flow rate. Furthermore, in the outer region R2 of the substrate W, unnecessary consumption of the liquid is suppressed. These results in reduced unnecessary consumption of the liquid and high-precision processing of the substrate W.

[0143] Furthermore, in the outer region R2 of substrate W, it is not necessary to ensure that the amount of liquid supplied to substrate W is precisely consistent with the target flow rate. This is because the outer region R2 of substrate W is a non-circuit pattern formation area, and there is no need to strictly manage the supply flow rate of the liquid.

[0144] 7. Other examples of valve conditions

[0145] As described above, feedback control of the regulating valve 65 can improve the accuracy of the drug flow rate adjustment. On the other hand, fixed control of the regulating valve 65 can improve the responsiveness of the drug flow rate adjustment. Taking these points into consideration, the valve conditions can be determined as follows: in the portion of the movement path MP where the target flow rate changes significantly above a preset threshold flow rate, the regulating valve 65 is fixedly controlled; in other portions, the regulating valve 65 is subjected to feedback control.

[0146] The threshold flow rate is set to the degree to which the responsiveness of flow rate adjustment does not decrease significantly when feedback control of the adjustment valve 65 is applied (e.g., around 400 ml / min).

[0147] Figure 11 These are diagrams used to illustrate other examples of target flow conditions and valve conditions. In Figure 11 The upper section uses a graph to illustrate other examples of target flow conditions. In the graph of target flow conditions, the vertical axis represents the target flow, and the horizontal axis represents the position on the movement path MP. According to the target flow conditions in this example, the target flow for points p01–p05 and p16–p20 is determined to be the first flow fr1. On the other hand, the target flow for points p06–p15 is determined to be the second flow fr2, which is higher than the first flow fr1. The difference between the first flow fr1 and the second flow fr2 exceeds the threshold flow.

[0148] exist Figure 11 The next section, through a diagram, shows the relationship with... Figure 11 Other examples of valve conditions corresponding to the target flow rate condition in the upper section. Figure 11 In the valve condition graph, the vertical axis represents the valve control method, and the horizontal axis represents the position on the movement path MP. On the vertical axis, [the following text appears to be incomplete and requires further context: "and..."] Figure 5 Similarly, CL1 is denoted as fixed control, and CL2 is denoted as feedback control.

[0149] In the valve conditions of this example, it is determined that feedback control of regulating valve 65 should be performed at points p01–p04, p07–p14, and p17–p20. Furthermore, it is determined that fixed control of regulating valve 65 should be performed at points p05, p06, p15, and p16.

[0150] Based on the valve conditions, the valve 65 is locally fixed in the portion of the movement path MP where the target flow rate varies significantly. Therefore, even if the nozzle 40 moves at a relatively high speed between two portions with different target flow rates, it is easy to supply an appropriate amount of treatment fluid to the two portions and their surrounding areas.

[0151] Furthermore, based on the valve conditions, feedback control of the regulating valve 65 is performed during the portion where the target flow rate remains unchanged. Therefore, during the portion where the target flow rate remains unchanged, the drug solution can be supplied to the substrate W with high precision.

[0152] 8. Another example of valve conditions

[0153] (1) Valve conditions

[0154] In item 3, the responsiveness to the adjustment of the drug flow rate has been explained, comparing feedback control and fixed control. In general, theoretically, the responsiveness to the adjustment of the drug flow rate decreases with feedback control.

[0155] On the other hand, as feedback control, there are control methods that use multiple control parameters. One such control method is PID (Proportional Integral Derivative) control. In PID control, output control is performed based on proportional, integral, and derivative parameters to make the state of the object approximate the target state.

[0156] Here, each of the proportional, integral, and derivative parameters affects the change in the state of the object. Therefore, in the case of PID control of the regulating valve 65, it is believed that the responsiveness of the liquid flow adjustment can be improved by using the values ​​of the proportional, integral, and derivative parameters and their combinations.

[0157] To compare the flow rate changes of pharmaceutical solutions using two different PID controls with varying control parameters, the inventors used... Figure 1 The substrate processing apparatus 1 was subjected to the second comparative test as shown below.

[0158] First, the inventors created a parameter group comprising a first proportional parameter "α1", a first integral parameter "β1", and a first differential parameter "γ1", as a first parameter group. Furthermore, the inventors created other parameter groups comprising a second proportional parameter "α2", a second integral parameter "β2", and a second differential parameter "γ2", as a second parameter group. The combinations of parameters in the first parameter group and the combinations of parameters in the second parameter group are different from each other.

[0159] Next, the inventors operated pump 63 and simultaneously opened valve 64, adjusting the opening of regulating valve 65 based on the flow rate reading of flow sensor 66, which was approximately 250 ml / min. Then, the inventors applied PID control to regulating valve 65 using a first parameter group, increasing the flow rate of the drug solution downstream of regulating valve 65 from approximately 250 ml / min to 2000 ml / min. Furthermore, the inventors recorded the flow rate reading of flow sensor 66 at this time. In the following description, the PID control using the first parameter group will be referred to as first PID control.

[0160] Next, the inventors adjusted the opening of the regulating valve 65 again, based on the flow rate sensor 66 reading of approximately 250 ml / min. Then, they applied PID control to the regulating valve 65 using a second parameter group, increasing the flow rate of the medicine downstream of the regulating valve 65 from approximately 250 ml / min to 2000 ml / min. Furthermore, they recorded the flow rate sensor 66 reading at this point. In the following description, the PID control using the second parameter group will be referred to as second PID control.

[0161] Figure 12 This is a graph representing the results of the second comparative experiment. In Figure 12 In the diagram, the vertical axis represents the flow rate of the liquid medicine flowing downstream of the regulating valve 65, and the horizontal axis represents time. Furthermore, in... Figure 12 In the diagram, a thick solid line shows the change in the flow rate of the medicine as the flow rate from nozzle 40 increases from approximately 250 ml / min to 2000 ml / min through the first PID control. On the other hand, a thick dashed line shows the change in the flow rate of the medicine as the flow rate from nozzle 40 increases from approximately 250 ml / min to 2000 ml / min through the second PID control.

[0162] like Figure 12 As shown, in the first PID control, it takes approximately 4 seconds to increase the flow rate of the medicine from approximately 250 ml / min to 2000 ml / min. In contrast, in the second PID control, it takes approximately 2.5 seconds to increase the flow rate of the medicine from approximately 250 ml / min to 2000 ml / min. The results also demonstrate that the responsiveness of the medicine flow rate adjustment can be achieved by using multiple PID controls with different control parameters for the regulating valve 65.

[0163] Therefore, the valve conditions for controlling the regulating valve 65 with multiple PID controls having different control parameters will be explained. Figure 13 This is another diagram used to illustrate valve conditions. In Figure 13 In the middle, through charts, it is shown that... Figure 4 This is another example of the valve condition corresponding to the target flow rate condition. In the valve condition of this example, the first PID control and the second PID control are used as multiple controls for the regulating valve 65.

[0164] exist Figure 13 In the valve condition graph, the vertical axis represents the valve control method, and the horizontal axis represents the position on the movement path MP. On the vertical axis, CL3 is denoted as the second PID control, and CL4 is denoted as the first PID control.

[0165] In the valve conditions of this example, it is determined that the second PID control of regulating valve 65 should be executed at points p01–p04 and p17–p20. Furthermore, it is determined that the first PID control of regulating valve 65 should be executed at points p05–p16.

[0166] Based on the valve conditions in this example, when the target flow rate changes between the first flow rate fr1 and the second flow rate fr2 in the outer region R2 of substrate W, the second PID control is executed on the regulating valve 65. Figure 12 The results of the second comparative test show that the second PID control of the regulating valve 65 improves the responsiveness of the liquid flow rate adjustment compared to the first PID control of the regulating valve 65. Therefore, compared to the case where the first PID control of the regulating valve 65 is applied at points p01–p04 and p17–p20, the flow rate of the liquid sprayed from the nozzle 40 approaches the target flow rate with high responsiveness.

[0167] (2) Parameters of PID control

[0168] Preferably, the first parameter group (α1, β1, γ1) of the first PID control is determined with the aim of adjusting the flow rate of the liquid medicine with higher precision. On the other hand, it is preferable to determine the second parameter group (α2, β2, γ2) of the second PID control with the aim of improving the responsiveness of the liquid medicine flow rate adjustment.

[0169] Based on these viewpoints, it is preferable to set the second proportional parameter "α2" to a value less than the first proportional parameter "α1". Alternatively, it is preferable to set the second integral parameter "β2" to a value less than the first integral parameter "β1". Furthermore, it is preferable to set the first differential parameter "γ1" and the second differential parameter "γ2" to the same value.

[0170] Furthermore, in PID control, decreasing the proportional parameter can easily lead to irregular fluctuations in the output. Conversely, increasing the proportional parameter increases the time until the output reaches the target value. Similarly, decreasing the derivative parameter shortens the time until the output reaches the target value, while increasing the derivative parameter increases the time until the output reaches the target value.

[0171] Therefore, it is preferable to determine the first parameter group (α1, β1, γ1) and the second parameter group (α2, β2, γ2) by taking into account the characteristics of each parameter and the change in flow rate.

[0172] 9. A substrate processing system equipped with substrate processing apparatus 1

[0173] Figure 14It means possessing Figure 1 A schematic top view of an example of a substrate processing system of substrate processing apparatus 1. (See attached image.) Figure 14 As shown, the substrate processing system 800 in this example includes a substrate loading / unloading section 801 and a substrate processing section 802.

[0174] The substrate loading / unloading section 801 is equipped with multiple (in this example, three) carrier placement stages 810, a transfer robot 821, and a control device 830. Each carrier placement stage 810 holds a carrier C that holds multiple substrates W. The transfer robot 821 includes multiple (e.g., four) arms configured to hold and transfer the substrates W. The control device 830 includes a CPU and memory or a microcomputer, controlling the various components within the substrate processing system 800.

[0175] A transfer robot 822 and multiple (four in this example) substrate processing units 1 are provided in the substrate processing section 802. Viewed from above, the four substrate processing units 1 are arranged to surround the transfer robot 822. These substrate processing units 1 are... Figure 1 The substrate processing apparatus 1. That is to say, in Figure 15 In the substrate processing system 800, Figure 1 The substrate processing apparatus 1 is provided as a processing unit constituting the substrate processing system 800. The transfer robot 822 includes multiple (e.g., 4) hands and is configured to hold and transfer the substrate W.

[0176] In the substrate processing system 800, a transfer robot 821 removes an unprocessed substrate W from any of a plurality of carriers C placed on a plurality of carrier placement stages 810 and hands it over to a transfer robot 822. The transfer robot 822 then transfers the substrate W to one of a plurality of substrate processing apparatuses 1. Thus, the etching process is performed in one substrate processing apparatus 1.

[0177] Furthermore, the transfer robot 822 removes the processed substrate W from one of the multiple substrate processing devices 1 and hands it over to the transfer robot 821. The transfer robot 821 receives the processed substrate W and houses it in an empty carrier C.

[0178] According to each substrate processing apparatus 1, the wasteful consumption of the chemical solution can be reduced and the substrate W can be processed with high precision. Therefore, according to the substrate processing system 800, the wasteful consumption of the chemical solution can be further reduced. In addition, high-efficiency substrate processing can be performed with a high yield.

[0179] 10. Other implementation methods

[0180] (a) Although in the substrate processing apparatus 1 of the described embodiment, the etching solution for the substrate W is supplied from the liquid supply source 61 to the substrate W through the liquid flow path 62 and the nozzle 40, the present invention is not limited thereto.

[0181] The solution ejected from nozzle 40 onto substrate W can also be generated by mixing multiple processing solutions. In this case, liquid supply system 60 may also have a configuration that generates a solution for etching treatment of substrate W by mixing multiple processing solutions.

[0182] Figure 15 This is a schematic diagram illustrating an example of a liquid supply system 60 in another embodiment. In this example, the etching solution for the substrate W is generated by mixing two processing solutions.

[0183] Figure 15 The liquid supply system 60 includes liquid supply sources 61a and 61b, liquid flow paths 62a, 62b and 62m, pumps 63a and 63b, on / off valves 64a and 64b, regulating valves 65a and 65b, and flow sensors 66a and 66b.

[0184] The liquid supply source 61a is a storage tank configured to store a certain amount of the first processing liquid. The liquid supply source 61a is connected upstream of the liquid flow path 62a. The liquid flow path 62a is mainly formed by one or more pipes.

[0185] The liquid supply source 61b is a storage tank configured to store a certain amount of the second processing liquid. The liquid supply source 61b is connected upstream of the liquid flow path 62b. The liquid flow path 62b is mainly formed by one or more pipes.

[0186] A liquid flow path 62m is provided extending from the nozzle 40. The liquid flow path 62m is mainly formed by one or more pipes. At two sections of the liquid flow path 62m, the downstream ends of two liquid flow paths 62a and 62b are connected.

[0187] In liquid flow path 62a, pump 63a, on / off valve 64a, regulating valve 65a, and flow sensor 66a are arranged sequentially from upstream to downstream. In liquid flow path 62b, pump 63b, on / off valve 64b, regulating valve 65b, and flow sensor 66b are also arranged sequentially from upstream to downstream.

[0188] Pumps 63a and 63b have substantially the same configuration as pump 63 in the described embodiment. On / off valves 64a and 64b have substantially the same configuration as on / off valve 64 in the described embodiment. Adjusting valves 65a and 65b have substantially the same configuration as adjusting valve 65 in the described embodiment. Flow sensors 66a and 66b have substantially the same configuration as flow sensor 66 in the described embodiment.

[0189] In the liquid supply system 60 of this example, during the etching process of the substrate W, the on / off valves 64a and 64b and the adjusting valves 65a and 65b are mainly controlled. As a result, a first processing liquid is supplied from the liquid supply source 61a to the liquid flow path 62m via the liquid flow path 62a. Furthermore, a second processing liquid is supplied from the liquid supply source 61b to the liquid flow path 62m via the liquid flow path 62b. In the liquid flow path 62m, the first and second processing liquids supplied from the liquid flow paths 62a and 62b are mixed to generate a chemical solution. The generated chemical solution is guided to the nozzle 40 and ejected from the nozzle 40.

[0190] Here, in order to prevent deviations in the composition of the etching solution, it is necessary to accurately adjust the flow rates of the first and second processing solutions flowing through liquid flow paths 62a and 62b, respectively.

[0191] Therefore, when the liquid supply system 60 has multiple liquid flow paths 62a, 62b corresponding to multiple processed liquids and multiple regulating valves 65a, 65b, it is preferable to determine the target flow rate conditions and valve conditions for each processed liquid. Specifically, in Figure 15 In the example, it is preferable to determine the target flow rate conditions and valve conditions corresponding to the first processed liquid, and at the same time determine the target flow rate conditions and valve conditions corresponding to the second processed liquid.

[0192] (b) Although the substrate processing apparatus 1 of the described embodiment is mainly an etching apparatus for etching the substrate W, the present invention is not limited thereto. The substrate processing apparatus 1 may also be a coating processing apparatus for supplying a coating liquid to the upper surface of the substrate W.

[0193] In this case, a coating liquid for forming a resist film or antireflective film, etc., is supplied as a processing liquid to the upper surface of the substrate W held by the substrate holding device 10. Therefore, the substrate processing device 1 is provided with a coating liquid corresponding to the substrate W. Figure 1 The liquid supply system 60 is a coating liquid supply system.

[0194] Therefore, by determining the nozzle movement conditions, target flow conditions, valve conditions, and basic operating conditions corresponding to the coating liquid supply system, and performing the coating process based on these conditions, the same effect as described in the embodiment can be obtained.

[0195] (c) Although the substrate processing apparatus 1 of the above embodiment is mainly an etching apparatus for etching the substrate W, the present invention is not limited thereto. The substrate processing apparatus 1 may also be a substrate processing apparatus for replacing and cleaning the chemical solution remaining on the upper surface of the etched substrate W.

[0196] In this case, after the etching process of the substrate W, a replacement solution and a cleaning solution are sequentially supplied as treatment solutions to the upper surface of the substrate W held by the substrate holding device 10. Therefore, in the substrate processing apparatus 1, except for Figure 1 In addition to the liquid supply system 60, a replacement fluid supply system and a cleaning fluid supply system corresponding to the liquid supply system 60 are also provided.

[0197] Therefore, by determining the nozzle movement conditions, target flow conditions, valve conditions, and basic operating conditions corresponding to the displacement fluid supply system and the cleaning fluid supply system, respectively, and performing each process based on these conditions, the same effect as the described embodiment can be obtained.

[0198] In addition, when supplying replacement fluid and cleaning fluid to substrate W, the target flow rate condition can be determined by ensuring that the flow rate of the processing fluid supplied to the outer region R2 of the upper surface of substrate W is greater than the flow rate of the processing fluid supplied to the central region R1 of the upper surface of substrate W.

[0199] (d) In the substrate processing apparatus 1 of the described embodiment, the adjusting valve 65 is controlled by two control methods during the etching process of the substrate W. However, the present invention is not limited thereto.

[0200] The control method for the regulating valve 65 performed during the etching process of the substrate W can be three or more types. For example, the substrate processing apparatus 1 can switch between fixed control, first PID control, and second PID control for the regulating valve 65 during the etching process of a substrate W.

[0201] (e) In the nozzle movement condition of the described embodiment, multiple movement speeds are determined such that they correspond to multiple points p01 to p20 on the movement path MP. Furthermore, in the target flow condition, multiple target flow rates are determined such that they correspond to multiple points p01 to p20 on the movement path MP. Furthermore, in the valve condition, multiple control methods are determined such that they correspond to multiple points p01 to p20 on the movement path MP. However, the present invention is not limited thereto.

[0202] Under nozzle movement conditions, multiple movement speeds can be determined by corresponding to multiple parts (ranges) of the movement path MP. Under target flow conditions, multiple target flow rates can be determined by corresponding to multiple parts (ranges) of the movement path MP. Under valve conditions, multiple control methods can be determined by corresponding to multiple parts (ranges) of the movement path MP.

[0203] (f) Although in the substrate processing apparatus 1 of the described embodiment, the substrate holding device 10 has a so-called mechanical chuck configuration in which the substrate W is held by a plurality of holding pins 11b abutting against the outer peripheral end of the substrate W, the present invention is not limited thereto. The substrate holding device 10 may also have an adsorption configuration in which the lower surface center of the substrate W is adsorbed and held.

[0204] 11. Correspondence between the constituent elements of the technical solution and the various parts of the implementation method

[0205] Hereinafter, examples of the correspondence between the constituent elements of the technical solution and the elements of the implementation method will be described, but the present invention is not limited to the following examples. Various other elements having the structure or function described in the technical solution can also be used as constituent elements of the technical solution.

[0206] In the embodiment described above, the substrate holding section 11 is an example of a substrate holding section, the chemical solution, the first processing solution, the second processing solution, the coating solution, the replacement solution, and the cleaning solution are examples of processing solutions, the nozzle 40 is an example of a nozzle, the liquid flow paths 62, 62a, and 62b are examples of liquid flow paths, the adjusting valve 65 is an example of a valve, the liquid supply system 60 is an example of a processing solution supply system, and the substrate processing apparatus 1 and the substrate processing system 800 are examples of substrate processing apparatuses.

[0207] Furthermore, the nozzle moving device 50 is an example of a moving drive unit, the control unit 90 is an example of a control unit, the feedback control and the first PID control corresponding to a part of the substrate W (a part of the moving path MP) in the valve condition are examples of first valve control information, and the fixed control and the second PID control corresponding to other parts of the substrate W (other parts of the moving path MP) in the valve condition are examples of second valve control information.

[0208] Furthermore, the central region R1 is an example of a central region, the outer region R2 is an example of an outer region, the threshold flow rate is an example of a threshold, the horizontal drive unit 52 and the horizontal movement control unit 916 are examples of nozzle position acquisition units, the flow sensor 66 is an example of a flow detection unit, the first parameter group is an example of a first control parameter, and the second parameter group is an example of a second control parameter. Figure 2 Points p03 and p18 on the movement path MP, corresponding to portions of substrate W, are examples of part 1, and... Figure 2Points p02 and p19 on the moving path MP correspond to portions of substrate W, which are examples of the second part.

[0209] 12. Summary of Implementation Methods

[0210] (Item 1) The substrate processing apparatus of item 1 includes:

[0211] A substrate holding section holds the substrate and rotates it.

[0212] The nozzle sprays the treatment liquid downwards;

[0213] A treatment fluid supply system includes a liquid flow path connected to the nozzle and a valve for adjusting the flow rate of the treatment fluid flowing through the liquid flow path, thereby supplying the treatment fluid to the nozzle;

[0214] The moving drive unit maintains the nozzle in a position above the substrate held by the substrate holding unit, and moves it to multiple radially different portions of the upper surface of the substrate; and

[0215] The control unit controls the movement drive unit based on nozzle movement conditions and controls the valve based on valve conditions; and

[0216] The nozzle movement conditions include multiple part movement information, which determines the movement speed of the nozzle when the multiple parts of the substrate move respectively in order to supply the processing liquid to each of the multiple parts of the substrate;

[0217] The valve conditions include multiple valve control information, which represent the valve control method when the nozzle moves in the multiple parts respectively.

[0218] The multiple valve control information includes:

[0219] The first valve control information corresponds to a portion of the plurality of portions of the substrate; and

[0220] The second valve control information corresponds to other portions of the plurality of portions of the substrate and is different from the first valve control information.

[0221] In the substrate processing apparatus, nozzles move across multiple portions of a substrate held by a substrate holding section. Furthermore, processing liquid is supplied to the nozzles via a liquid flow path. This supplies processing liquid to multiple portions of the upper surface of the substrate, thereby processing the substrate.

[0222] In this process, the processing liquid is preferably supplied to multiple portions of the substrate at appropriate times, for example, to improve the uniformity of the processing. Therefore, in the substrate processing apparatus, the nozzle movement speed is adjusted in multiple portions of the substrate based on the nozzle movement conditions.

[0223] Furthermore, in each of the plurality of portions of the substrate, it is preferable to supply an appropriate amount of processing liquid for processing the portion. However, depending on the type of processing liquid, the amount of processing liquid to be supplied to each of the plurality of portions of the substrate, and the moving speed of the nozzles as the plurality of portions of the substrate move respectively, it may be impossible to supply an appropriate amount of processing liquid to the plurality of portions of the substrate due to the valve control method.

[0224] Therefore, in the substrate processing apparatus, valve control is performed on one of the multiple portions of the substrate based on first valve control information. Furthermore, valve control is performed on the other portions of the substrate based on second valve control information, which differs from the first valve control information. Thus, by appropriately setting the first and second valve control information, an appropriate amount of processing liquid can be supplied to the multiple portions of the substrate. In other words, the valve control method can be varied among the multiple portions of the substrate depending on the nozzle's movement speed and the amount of processing liquid to be ejected from the nozzle as each portion of the substrate moves.

[0225] Therefore, because the appropriate amount of processing liquid can be supplied to multiple parts of the substrate, the wasteful consumption of processing liquid can be reduced, and the substrate can be processed with high precision.

[0226] (Item 2) can also be, according to the substrate processing apparatus of Item 1, wherein

[0227] The substrate processing apparatus further comprises:

[0228] The nozzle position acquisition unit acquires the position of the nozzle relative to the substrate; and

[0229] The flow detection unit detects the flow rate of the processed liquid flowing through the liquid flow path; and

[0230] The flow rate of the processing liquid that should flow through the liquid flow path as the nozzle moves through each of the plurality of portions of the substrate is determined as the target flow rate corresponding to that portion;

[0231] The first valve control information includes information on feedback control, which is based on the detection results of the flow detection unit and the nozzle position acquisition unit, and adjusts the valve opening in such a way that the flow rate of the processed liquid flowing through the liquid flow path is close to the target flow rate corresponding to the position detected by the nozzle position acquisition unit.

[0232] The second valve control information includes information on fixed control, which fixes the valve opening to a pre-set specified opening.

[0233] In this case, the valve opening is controlled by feedback based on the control information from the first valve. This allows for the precise supply of the appropriate amount of processing liquid to each of the multiple portions of the substrate.

[0234] On the other hand, the valve is fixedly controlled based on the control information from the second valve. When the valve is fixedly controlled, the responsiveness to changes in the flow rate of the processed liquid flowing through the liquid path is higher compared to the case of feedback control based on the control information from the first valve.

[0235] There are cases where two adjacent portions of a substrate have corresponding target flow rates with a relatively large difference. As described above, the responsiveness to changes in the flow rate of the processing liquid ejected from the nozzle increases based on the second valve control information. Therefore, when the nozzle moves between the two portions, by controlling the valve based on the second valve control information, it is easy to adjust the flow rate of the processing liquid ejected from the nozzle in accordance with the nozzle's movement speed.

[0236] (Item 3) can also be, according to the substrate processing apparatus of Item 2, wherein

[0237] The upper surface of the substrate includes:

[0238] A central region, comprising the central portion of the substrate and having a circuit pattern formed thereon or a circuit pattern pre-determined to be formed thereon; and

[0239] The outer region includes a first portion and a second portion arranged radially outward from the center of the substrate, and the outer peripheral end of the substrate, and surrounds the central region of the substrate; and

[0240] The target flow rate corresponding to the second portion of the substrate is lower than the target flow rate corresponding to the central region of the substrate and the first portion of the substrate;

[0241] The first valve control information is valve control information that indicates the valve control method when the nozzle moves in at least a portion of the central region;

[0242] The second valve control information is valve control information that indicates the valve control method when the nozzle moves in the outer region;

[0243] The specified opening degree is set to the valve opening degree at which the estimated flow rate of the processed liquid flowing through the liquid flow path is consistent with the target flow rate corresponding to the position detected by the nozzle position acquisition unit.

[0244] The central region of the substrate has a circuit pattern or is intended to have a circuit pattern formed thereon. Therefore, the central region of the substrate requires high-precision processing with the processing solution. On the other hand, the outer regions of the substrate do not have a circuit pattern formed or are not intended to have a circuit pattern formed thereon. Therefore, the outer regions of the substrate are not intended to be processed by the processing solution.

[0245] According to the aforementioned configuration, the target flow rate corresponding to the central region of the substrate and the first portion of the substrate is higher than the target flow rate corresponding to the second portion of the substrate. Furthermore, feedback control is applied to the valve while the nozzle moves through at least a portion of the central region of the substrate. This allows for the easy and precise supply of the required amount of processing liquid to the central region of the substrate. Therefore, the central region of the substrate is processed with high precision.

[0246] On the other hand, the valve is fixedly controlled as the nozzle moves in the outer region of the substrate. In this case, because the target flow rate corresponding to the second part of the substrate is lower than the target flow rate corresponding to the central region and the first part of the substrate, the amount of processing liquid supplied to the outer region of the substrate is reduced by setting the valve to a predetermined opening. In other words, excessive processing liquid is prevented from being supplied to the non-circuit pattern forming region in the substrate.

[0247] Furthermore, compared to feedback control, fixed control improves the responsiveness to changes in the flow rate of the processing fluid flowing through the liquid flow path. Therefore, when the nozzle moves continuously in the first and second sections, the flow rate of the processing fluid supplied to the substrate is less likely to experience a large response delay. As a result, it is possible to suppress significant deviations of the flow rate of the processing fluid supplied to the central region of the substrate from the target flow rate. Additionally, unnecessary consumption of the processing fluid is suppressed in the outer regions of the substrate.

[0248] Furthermore, in the outer region of the substrate, it is not necessary to ensure that the amount of processing liquid supplied to the substrate is precisely consistent with the target flow rate. This is because the outer region of the substrate is a non-circuit pattern formation area, and there is no need to strictly manage the supply flow rate of the processing liquid.

[0249] (Item 4) can also be, according to the substrate processing apparatus of Item 2, wherein

[0250] When viewed from above, the plurality of portions of the substrate are arranged on a virtual line passing through the center of the substrate, extending from a portion of the outer peripheral end of the substrate through the other portions of the outer peripheral end of the substrate; and

[0251] The second valve control information is valve control information indicating the valve control method when the nozzle moves in the two portions if the difference between the two target flow rates corresponding to two adjacent portions of the plurality of portions of the substrate arranged on the virtual line exceeds a preset threshold.

[0252] Compared to feedback control, fixed control improves the responsiveness to changes in the flow rate of the processed fluid flowing through the liquid flow path. Therefore, according to this configuration, even if the nozzle moves at a relatively high speed between two sections with different target flow rates, it is easy to supply the appropriate amount of processed fluid to the two sections.

[0253] (Item 5) can also be, according to the substrate processing apparatus of Item 1, wherein

[0254] The substrate processing apparatus further comprises:

[0255] The nozzle position acquisition unit acquires the position of the nozzle on the substrate; and

[0256] The flow detection unit detects the flow rate of the processed liquid flowing through the liquid flow path; and

[0257] The flow rate of the processing liquid that should flow through the liquid flow path as the nozzle moves through each of the plurality of portions of the substrate is determined as the target flow rate corresponding to that portion;

[0258] The first valve control information includes information on the need for first feedback control. The first feedback control is based on a preset first control parameter and the detection results of the flow detection unit and the nozzle position acquisition unit. The valve opening is adjusted so that the flow rate of the processed liquid flowing through the liquid flow path is close to the target flow rate corresponding to the position detected by the nozzle position acquisition unit.

[0259] The second valve control information includes information on the need for a second feedback control. The second feedback control is based on a pre-set second control parameter and the detection results of the flow detection unit and the nozzle position acquisition unit. The valve opening is adjusted so that the flow rate of the processed liquid flowing through the liquid flow path is close to the target flow rate corresponding to the position detected by the nozzle position acquisition unit.

[0260] The first control parameter and the second control parameter are different from each other.

[0261] In this case, a control method switches the valve between a first feedback control and a second feedback control while the nozzle moves across multiple portions of the substrate. The first feedback control is based on a first control parameter, and the second feedback control is based on a second control parameter that is different from the first control parameter. Therefore, by appropriately setting the first and second control parameters, an appropriate amount of processing liquid can be supplied to multiple portions of the substrate.

[0262] (Item 6) The substrate processing method in Item 6 is a substrate processing method that processes a substrate using a substrate processing apparatus; and

[0263] The substrate processing apparatus includes:

[0264] The nozzle sprays the treatment liquid downwards;

[0265] The liquid flow path is connected to the nozzle; and

[0266] A valve to adjust the flow rate of the processed liquid flowing through the liquid flow path;

[0267] The substrate processing method includes the following steps:

[0268] The substrate is held and rotated by a substrate holding part;

[0269] Based on nozzle movement conditions, the nozzle is maintained above the substrate held by the substrate holding portion, and moved to multiple radially different portions on the upper surface of the substrate; and

[0270] Based on the valve conditions, adjust the flow rate of the treatment liquid flowing through the liquid flow path to the nozzle;

[0271] The nozzle movement conditions include multiple part movement information, which determines the movement speed of the nozzle when the multiple parts of the substrate move respectively in order to supply the processing liquid to each of the multiple parts of the substrate;

[0272] The valve conditions include multiple valve control information, which represent the valve control method when the nozzle moves in the multiple parts respectively.

[0273] The multiple valve control information includes:

[0274] The first valve control information corresponds to a portion of the plurality of portions of the substrate; and

[0275] The second valve control information corresponds to other portions of the plurality of portions of the substrate and is different from the first valve control information.

[0276] In the substrate processing method, a nozzle moves across multiple portions of a substrate held by a substrate holding section. Furthermore, a processing liquid is supplied to the nozzle through a liquid flow path. This supplies the processing liquid to multiple portions of the upper surface of the substrate, thereby processing the substrate.

[0277] In this process, the processing liquid is preferably supplied to multiple portions of the substrate at appropriate times, for example, to improve the uniformity of the processing. Therefore, in this substrate processing method, the nozzle movement speed is adjusted in multiple portions of the substrate based on the nozzle movement conditions.

[0278] Furthermore, in each of the plurality of portions of the substrate, it is preferable to supply an appropriate amount of processing liquid for processing the portion. However, depending on the type of processing liquid, the amount of processing liquid to be supplied to each of the plurality of portions of the substrate, and the moving speed of the nozzles as the plurality of portions of the substrate move respectively, it may be impossible to supply an appropriate amount of processing liquid to the plurality of portions of the substrate due to the valve control method.

[0279] Therefore, in the substrate processing method, valve control based on first valve control information is performed on one of the multiple portions of the substrate. Furthermore, valve control based on second valve control information, which differs from the first valve control information, is performed on the other portions of the substrate. Thus, by appropriately setting the first and second valve control information, an appropriate amount of processing liquid can be supplied to the multiple portions of the substrate. In other words, the valve control method can be varied among the multiple portions of the substrate depending on the nozzle's movement speed and the amount of processing liquid to be ejected from the nozzle as each of the multiple portions of the substrate moves.

[0280] Therefore, because the appropriate amount of processing liquid can be supplied to multiple parts of the substrate, the wasteful consumption of processing liquid can be reduced, and the substrate can be processed with high precision.

Claims

1. A substrate processing apparatus comprising: a substrate holding section for holding and rotating a substrate; The nozzle sprays the treatment liquid downwards; A treatment fluid supply system includes a liquid flow path connected to the nozzle and a valve for adjusting the flow rate of the treatment fluid flowing through the liquid flow path, thereby supplying the treatment fluid to the nozzle; The moving drive unit maintains the nozzle in a position above the substrate held by the substrate holding unit, and moves it to multiple radially different portions on the upper surface of the substrate; and The control unit controls the movement drive unit based on nozzle movement conditions and controls the valve based on valve conditions; and The nozzle movement conditions include multiple part movement information, which determines the movement speed of the nozzle when the multiple parts of the substrate move respectively in order to supply the processing liquid to each of the multiple parts of the substrate; The valve conditions include multiple valve control information, which represent the valve control method when the nozzle moves in the multiple parts respectively. The multiple valve control information includes: The first valve control information corresponds to a portion of the plurality of portions of the substrate; and The second valve control information corresponds to other portions of the plurality of portions of the substrate and is different from the first valve control information.

2. The substrate processing apparatus according to claim 1, further comprising: a nozzle position acquisition unit for acquiring the position of the nozzle relative to the substrate; and The flow detection unit detects the flow rate of the processed liquid flowing through the liquid flow path; and The flow rate of the processing liquid that should flow through the liquid flow path as the nozzle moves through each of the plurality of portions of the substrate is determined as the target flow rate corresponding to that portion; The first valve control information includes information on feedback control, which is based on the detection results of the flow detection unit and the nozzle position acquisition unit, and adjusts the valve opening in such a way that the flow rate of the processed liquid flowing through the liquid flow path is close to the target flow rate corresponding to the position detected by the nozzle position acquisition unit. The second valve control information includes information on fixed control, which fixes the valve opening to a pre-set specified opening.

3. The substrate processing apparatus of claim 2, wherein the upper surface of the substrate comprises: The central region includes the central portion of the substrate and is formed with or is intended to form the circuit pattern; and The outer region includes a first portion and a second portion arranged radially outward from the center of the substrate, and the outer peripheral end of the substrate, and surrounds the central region of the substrate; and The target flow rate corresponding to the second portion of the substrate is lower than the target flow rate corresponding to the central region of the substrate and the first portion of the substrate; The first valve control information is valve control information that indicates the valve control method when the nozzle moves in at least a portion of the central region; The second valve control information is valve control information that indicates the valve control method when the nozzle moves in the outer region; The specified opening degree is set to the valve opening degree at which the estimated flow rate of the processed liquid flowing through the liquid flow path is consistent with the target flow rate corresponding to the position detected by the nozzle position acquisition unit.

4. The substrate processing apparatus of claim 2, wherein the plurality of portions of the substrate, when viewed from above, are arranged on a virtual line passing through the center of the substrate from a portion of the outer peripheral end of the substrate through other portions of the outer peripheral end of the substrate; and The second valve control information is valve control information indicating the valve control method when the nozzle moves in the two portions if the difference between the two target flow rates corresponding to two adjacent portions of the plurality of portions of the substrate arranged on the virtual line exceeds a preset threshold.

5. The substrate processing apparatus according to claim 1, further comprising: a nozzle position acquisition unit for acquiring the position of the nozzle on the substrate; and The flow detection unit detects the flow rate of the processed liquid flowing through the liquid flow path; and The flow rate of the processing liquid that should flow through the liquid flow path as the nozzle moves through each of the plurality of portions of the substrate is determined as the target flow rate corresponding to that portion; The first valve control information includes information on the need for first feedback control. The first feedback control is based on a preset first control parameter and the detection results of the flow detection unit and the nozzle position acquisition unit. The valve opening is adjusted so that the flow rate of the processed liquid flowing through the liquid flow path is close to the target flow rate corresponding to the position detected by the nozzle position acquisition unit. The second valve control information includes information on the need for a second feedback control. The second feedback control is based on a pre-set second control parameter and the detection results of the flow detection unit and the nozzle position acquisition unit. The valve opening is adjusted so that the flow rate of the processed liquid flowing through the liquid flow path is close to the target flow rate corresponding to the position detected by the nozzle position acquisition unit. The first control parameter and the second control parameter are different from each other.

6. A substrate processing method, which is a substrate processing method using a substrate processing apparatus to process a substrate; and The substrate processing apparatus includes: The nozzle sprays the treatment liquid downwards; The liquid flow path is connected to the nozzle; and A valve to adjust the flow rate of the processed liquid flowing through the liquid flow path; The substrate processing method includes the following steps: The substrate is held and rotated by a substrate holding part; Based on the nozzle movement conditions, the nozzle is maintained above the substrate held by the substrate holding part, and moved to multiple radially different portions of the upper surface of the substrate; and Based on the valve conditions, adjust the flow rate of the treatment liquid flowing through the liquid flow path to the nozzle; The nozzle movement conditions include multiple part movement information, which determines the movement speed of the nozzle when the multiple parts of the substrate move respectively in order to supply the processing liquid to each of the multiple parts of the substrate; The valve conditions include multiple valve control information, which represent the valve control method when the nozzle moves in the multiple parts respectively. The multiple valve control information includes: The first valve control information corresponds to a portion of the plurality of portions of the substrate; and The second valve control information corresponds to other portions of the plurality of portions of the substrate and is different from the first valve control information.

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