Radioactive battery and power plant

Abstract

The present application can provide a radioactive battery including a plurality of radioactive battery cells stacked in a stacking direction, the stacking direction being one direction, each of the plurality of radioactive battery cells including an electrode layer including a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode, a radiation source, and an energy conversion layer surrounding at least a portion of the radiation source and disposed between the electrode layer and the radiation source; and a connector disposed in at least some gaps existing between any adjacent radioactive battery cells of the plurality of radioactive battery cells to electrically connect respective electrode layers of the adjacent radioactive battery cells to each other.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0129031 filed on September 24, 2024, and Korean Patent Application No. 10-2025-0137227 filed on September 23, 2025, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] Exemplary embodiments relate to a radioactive battery and an electrical device including the radioactive battery. Background Technology

[0004] Radioactive isotopes are elements that decay into stable isotopes upon emitting radiation. Alpha decay, beta decay, and gamma decay are known decay mechanisms of radioactive isotopes. Depending on the type, a radioactive isotope emits alpha, beta, or gamma rays during decay. The time it takes for the radioactive content to decrease to half its initial amount during decay is called the half-life. The type of radiation emitted during decay and its half-life are determined based on the type of radioactive isotope.

[0005] A radioactive battery is a battery that converts the nuclear fission energy of a radioactive isotope into electrical energy for use as a power source.

[0006] For example, a beta-voltaic cell is a cell that uses beta rays, which are radiation emitted from a radioactive isotope. The beta rays are absorbed by a PN junction semiconductor, thereby forming electron-hole pairs in the depletion region and making it possible to use the generated electrons and holes as a power source. Summary of the Invention

[0007] [Technical Issues]

[0008] One aspect provides a radioactive battery and a power device that can be applied to electronic products requiring high power by generating high-density power.

[0009] [Technical Solution]

[0010] According to one aspect, a radioactive battery includes: a plurality of radioactive cell units, each radioactive cell unit including an electrode layer, a radiation source, and an energy conversion layer, the electrode layer including a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode, the energy conversion layer surrounding at least a portion of the radiation source and disposed between the electrode layer and the radiation source, and the plurality of radioactive cell units being stacked along a unidirectional stacking direction; and a connector disposed in at least one gap between any adjacent radioactive cell units of the plurality of radioactive cell units, and electrically connecting the respective electrode layers of the adjacent radioactive cell units.

[0011] In a radioactive battery of an exemplary embodiment, the electrode layer may surround at least a portion of the energy conversion layer.

[0012] In the radioactive battery of the exemplary embodiment, the energy conversion layer may include a type I semiconductor and a type II semiconductor, and a first electrode may surround at least a portion of the type I semiconductor and a second electrode may surround at least a portion of the type II semiconductor.

[0013] In the radioactive battery of an exemplary embodiment, the electrode insulating layer may surround at least a portion of the boundary between the type I semiconductor and the type II semiconductor.

[0014] In the radioactive battery of the exemplary embodiment, a type I semiconductor may surround at least a portion of the radioactive source, and a type II semiconductor may surround a portion of the type I semiconductor.

[0015] In the radioactive battery of the exemplary embodiment, the energy conversion layer may include a first energy conversion layer and a second energy conversion layer, each of which includes a type I semiconductor and a type II semiconductor. The first energy conversion layer may surround at least a portion of the radioactive source, and the second energy conversion layer may surround at least a portion of the first energy conversion layer.

[0016] In the radioactive battery of the exemplary embodiment, the type I semiconductor of the second energy conversion layer may surround at least a portion of the type II semiconductor of the first energy conversion layer, and the type II semiconductor of the second energy conversion layer may surround at least a portion of the type I semiconductor of the first energy conversion layer.

[0017] In the radioactive battery of the exemplary embodiment, at least some of the plurality of radioactive cell elements may further include a dielectric layer that surrounds at least a portion of the radioactive source.

[0018] In the exemplary embodiment of the radioactive battery, the connector may include multiple connectors, and some connectors may electrically connect the first electrode of one radioactive cell and the second electrode of another radioactive cell in adjacent radioactive cell cores, and other connectors may electrically connect the second electrode of one radioactive cell and the first electrode of another radioactive cell in the adjacent radioactive cell cores.

[0019] In the exemplary embodiment of the radioactive battery, the connector may include multiple connectors, and some connectors may electrically connect the first electrode of one radioactive cell and the first electrode of another radioactive cell in adjacent radioactive cell cores, and other connectors may electrically connect the second electrode of one radioactive cell and the second electrode of another radioactive cell in adjacent radioactive cell cores.

[0020] The radioactive battery may also include an insulating layer disposed in at least one of the gaps between adjacent radioactive cell elements, wherein the radioactive source may be disposed through the insulating layer in the stacking direction.

[0021] In the radioactive battery of an exemplary embodiment, the connector may be disposed through the insulating layer in the stacking direction.

[0022] In the radioactive battery of the exemplary embodiment, the insulating layer may further include a dielectric layer that surrounds at least a portion of the radioactive source disposed in the insulating layer.

[0023] In the radioactive battery of the exemplary embodiment, the insulating layer may further include a semiconductor layer that surrounds at least a portion of the radioactive source disposed in the insulating layer.

[0024] In the exemplary embodiment of the radioactive battery, the semiconductor layer may be exposed from the insulating layer in the stacking direction and may be in contact with the energy conversion layer of each of the adjacent radioactive cell cells.

[0025] In the exemplary embodiment of the radioactive battery, the semiconductor layer may include a type A semiconductor and a type B semiconductor, and the type A semiconductor may surround at least a portion of the radioactive source disposed in the insulating layer, and the type B semiconductor may surround at least a portion of the type A semiconductor.

[0026] In the exemplary embodiment of the radioactive battery, the semiconductor layer may include a first semiconductor layer and a second semiconductor layer, each of which includes a type A semiconductor and a type B semiconductor. The first semiconductor layer may surround at least a portion of the radioactive source disposed in the insulating layer, and the second semiconductor layer may surround at least a portion of the first semiconductor layer.

[0027] In the radioactive battery of the exemplary embodiment, the type A semiconductor of the second semiconductor layer may surround at least a portion of the type B semiconductor of the first semiconductor layer, and the type B semiconductor of the second semiconductor layer may surround at least a portion of the type A semiconductor of the first semiconductor layer.

[0028] In the exemplary embodiment of the radioactive battery, the energy conversion layer may include a first energy conversion layer and a second energy conversion layer, each of which includes a type I semiconductor and a type II semiconductor. The first energy conversion layer may surround at least a portion of the radioactive source, and the second energy conversion layer may surround at least a portion of the first energy conversion layer. The first semiconductor layer may be in contact with the first energy conversion layer in at least a portion of the stacking direction, and the second semiconductor layer may be in contact with the second energy conversion layer in at least a portion of the stacking direction.

[0029] In the exemplary embodiment of the radioactive battery, the type I semiconductor of the second energy conversion layer may surround at least a portion of the type II semiconductor of the first energy conversion layer, and the type II semiconductor of the second energy conversion layer may surround at least a portion of the type I semiconductor of the first energy conversion layer. The type A semiconductor and type B semiconductor of the first semiconductor layer may respectively contact at least a portion of the type I semiconductor and type II semiconductor of the first energy conversion layer, and the type A semiconductor and type B semiconductor of the second semiconductor layer may respectively contact at least a portion of the type I semiconductor and type II semiconductor of the second energy conversion layer.

[0030] In the radioactive battery of the exemplary embodiment, the types of the A-type semiconductor of the first semiconductor layer and the I-type semiconductor of the first energy conversion layer may be different from each other, and the types of the B-type semiconductor of the first semiconductor layer and the II-type semiconductor of the first energy conversion layer may be different from each other, and the types of the A-type semiconductor of the second semiconductor layer and the I-type semiconductor of the second energy conversion layer may be different from each other, and the types of the B-type semiconductor of the second semiconductor layer and the II-type semiconductor of the second energy conversion layer may be different from each other.

[0031] According to another aspect, the radioactive battery includes: a plurality of radioactive cell units, each radioactive cell unit including an electrode layer, a radiation source, and an energy conversion layer, the electrode layer including a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode, the energy conversion layer surrounding at least a portion of the radiation source and disposed between the electrode layer and the radiation source, and the plurality of radioactive cell units stacked along a unidirectional stacking direction; an insulating layer disposed in at least one gap between any adjacent radioactive cell units of the plurality of radioactive cell units, and disposed at a position corresponding to the respective electrode layer of the adjacent radioactive cell units; and a connecting portion, the connecting portion including a first connecting portion electrically connecting the respective first electrode of the adjacent radioactive cell units, and a second connecting portion electrically connecting the respective second electrode of the adjacent radioactive cell units.

[0032] [Invention Effects]

[0033] According to exemplary embodiments, radioactive batteries and power devices that can be applied to electronic products requiring high power can be provided by generating high-density power. Attached Figure Description

[0034] The accompanying drawings provided in this invention are based on exemplary embodiments of the invention and provide ratios for the width, length, or thickness (or height) of various components to describe the invention in detail; these ratios may differ from the actual dimensions. Furthermore, in the coordinate system shown in the drawings, axes may be perpendicular to each other, the direction indicated by the arrows may be positive, and the direction opposite to the direction indicated by the arrows (the direction rotated 180 degrees) may be negative.

[0035] Figure 1 This is a perspective view illustrating at least a portion of a radioactive battery according to an exemplary embodiment of the present invention.

[0036] Figure 2 This is a plan view illustrating at least a portion of the radioactive cell of a radioactive battery according to an exemplary embodiment of the present invention.

[0037] Figure 3 This is a perspective view showing at least a portion of the radioactive cell of a radioactive battery according to an exemplary embodiment of the present invention.

[0038] Figure 4 This is a plan view illustrating at least a portion of the radioactive cell of a radioactive battery according to an exemplary embodiment of the present invention.

[0039] Figure 5 This is a plan view illustrating at least a portion of the radioactive cell of a radioactive battery according to an exemplary embodiment of the present invention.

[0040] Figure 6 This is a perspective view illustrating at least a portion of a radioactive battery according to an exemplary embodiment of the present invention.

[0041] Figure 7 This is a plan view illustrating at least a portion of the insulating layer of a radioactive battery according to an exemplary embodiment of the present invention.

[0042] Figure 8 This is a plan view illustrating at least a portion of the insulating layer of a radioactive battery according to an exemplary embodiment of the present invention.

[0043] Figure 9 This is a perspective view illustrating at least a portion of a radioactive battery according to an exemplary embodiment of the present invention.

[0044] Figure 10 This is a plan view illustrating at least a portion of the insulating layer of a radioactive battery according to an exemplary embodiment of the present invention.

[0045] Figure 11 This is a plan view illustrating at least a portion of the insulating layer of a radioactive battery according to an exemplary embodiment of the present invention.

[0046] Figure 12 This is a perspective view illustrating at least a portion of a radioactive battery according to an exemplary embodiment of the present invention.

[0047] Figure 13 This is a perspective view illustrating at least a portion of a radioactive battery according to an exemplary embodiment of the present invention. Detailed Implementation

[0048] Before describing this invention, the terms or words used herein and in the claims are not to be interpreted in their common or dictionary meanings. Furthermore, in accordance with the principle that inventors can describe their inventions in the best possible manner, inventors may appropriately define the concepts of terms, and these terms should be interpreted in a manner consistent with the technical spirit of the invention. The exemplary embodiments described in this specification and the structures shown in the accompanying drawings are merely most exemplary embodiments of the invention and may not represent the entire technical spirit of the invention. Therefore, as of the filing date of this invention, various equivalents and modifications that can replace these are possible.

[0049] The reference numerals or symbols described in the accompanying drawings may indicate parts or components that perform substantially the same function. For ease of description and understanding, the same reference numerals or symbols may be used in the description even in different exemplary embodiments. That is, even if parts with the same reference numerals are shown in multiple drawings, it does not necessarily mean that all multiple drawings represent the same embodiment.

[0050] In the following description, the singular form is intended to include the plural form unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” or “constituting” as used in this specification specify the presence of the stated feature, step, operation, component, part, or combination thereof, but do not preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0051] Furthermore, in the following description, terms such as upper side, upper part, lower side, lower part, side, front part, and rear part are based on the orientation shown in the accompanying drawings, and their descriptions may differ when the orientation of the object changes.

[0052] Furthermore, terms including ordinal numbers such as "first" and "second" may be used in the specification and claims to distinguish components. These ordinal numbers are used to distinguish identical or similar components, and the meaning of the terms should not be limited by these ordinal numbers. For example, the order of use or arrangement of components combined with an ordinal number should not be limited by that ordinal number. If necessary, ordinal numbers may be interchanged.

[0053] In the following description, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the spirit of the present invention may not be limited to the exemplary embodiments presented. For example, those skilled in the art who understand the spirit of the present invention may propose other exemplary embodiments falling within the scope of the present invention by adding, modifying, or removing components, and such exemplary embodiments are also considered to fall within the scope of the present invention. For clarity, the shapes and dimensions of the components in the drawings may be exaggerated.

[0054] Figure 1 This is a perspective view showing at least a portion of a radioactive battery 10 according to an exemplary embodiment of the present invention. Figure 2 This is a plan view showing at least a portion of the radioactive cell 100 of a radioactive battery 10 according to an exemplary embodiment of the present invention.

[0055] In one example, the radioactive battery 10 may include: a plurality of radioactive cell 100, each including an electrode layer 110, a radiation source 120, and an energy conversion layer 130; and a connector 200 disposed in at least one gap between any adjacent radioactive cell 100A and 100B of the plurality of radioactive cell 100, and electrically connected to the respective electrode layers 110A and 110B of the adjacent radioactive cell 100A and 100B.

[0056] This invention provides a radioactive battery 10 that can be applied to high-power electronic products by generating high-density energy. High-power electronic products can be any power-consuming product, such as semiconductor memories like DRAM or NAND flash memory, processors, mobile devices, vehicles, drones, and computers. In this specification, high-power electronic products may be referred to as loads.

[0057] A radioactive battery 10 according to an exemplary embodiment of the present invention may include radioactive cell 100. In one example, the radioactive battery 10 may include a plurality of radioactive cell 100, and the radioactive cell 100 may be electrically connected. In one example, by electrically connecting a plurality of radioactive cell 100, the radioactive battery 10 is advantageous in generating high-density energy.

[0058] In one example, the radioactive cell 10 may include a stacking direction along a single direction (e.g., Figure 1 The multiple radioactive cell 100s are stacked (D1) in the diagram. These multiple radioactive cell 100s can be stacked in one direction. Stacking multiple radioactive cell 100s is advantageous in terms of yield and scale-up.

[0059] In one example, the upper surface 100US of the radioactive cell may refer to a surface of the radioactive cell 100 in the stacking direction D1. In this specification, the first intersecting direction D2 may refer to a direction parallel to the upper surface 100US of the radioactive cell and intersecting the stacking direction D1, while the second intersecting direction D3 may refer to a direction parallel to the upper surface 100US of the radioactive cell and intersecting both the stacking direction D1 and the first intersecting direction D2.

[0060] A radioactive cell 100 in an exemplary embodiment of the present invention may include an electrode layer 110. The electrode layer 110 may include electrodes, and the electrodes may include an anode for providing electrons and a cathode for receiving electrons.

[0061] In one example, the electrode layer 110 may include a first electrode 111 and a second electrode 112 as electrodes. The second electrode 112 may be the opposite electrode of the first electrode 111. That is, when the first electrode 111 is the anode, the second electrode 112 may be the cathode, and when the first electrode 111 is the cathode, the second electrode 112 may be the anode. In one example, the first electrode 111 may be the cathode, and the second electrode 112 may be the anode.

[0062] In one example, the first electrode 111 and the second electrode 112 can be current collectors. The first electrode 111 and the second electrode 112 are not particularly limited in terms of type, size, and shape, as long as they are conductive and do not cause physical or chemical changes to other elements in the radioactive cell 10. For example, the first electrode 111 and the second electrode 112 can have a toroidal shape. Additionally, for example, the first electrode 111 and the second electrode 112 can include a metallic material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), can include a transparent oxide such as fluorine (F)-doped tin oxide (FTO) or indium tin oxide (ITO, In 2-x Sn x O3, 0 < x < 2), or can include a carbon-based compound such as carbon nanotubes, graphene, or graphene oxide.

[0063] In one example, the electrode layer 110 can include an electrode insulating layer 113 disposed between the first electrode 111 and the second electrode 112. In one example, the first electrode 111 and the second electrode 112 of the electrode layer 110 can be disposed in one layer, and the electrode insulating layer 113 is disposed between the first electrode 111 and the second electrode 112, thereby preventing a short circuit. In one example, since both the first electrode 111 and the second electrode 112 are disposed in one layer, the thickness of the entire electrode layer 110 can be minimized, and thus the power efficiency (power generated per unit volume) of the radioactive cell 10 can be improved. In one example, the electrode layer 110 can surround at least a portion of the energy conversion layer 130.

[0064] In one example, the electrode insulating layer 113 is not particularly limited as long as it is made of an electrically insulating material, but can include one or more selected from the group consisting of, for example, silicates (such as TEOS), silicon nitride (SiN), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanate, barium titanate, strontium titanate, yttrium oxide, and aluminum oxide.

[0065] The radioactive unit cell 100 of an exemplary embodiment of the present invention can include a radiation source 120. In one example, the radiation source 120 can include a radioactive isotope. The radioactive isotope is not particularly limited as long as its decay emits rays. For example, the radioactive isotope can include an isotope that emits α rays, which includes americium-241 ( 241 Am), americium-243( 243 Am), polonium-209 ( 209 Po), polonium-210 ( 210 Po), plutonium-238 (238 Pu), Plutonium-239 239 Pu), Curium-242 ( 242 Cm), Curium-244 ( 244 Cm), Curium-249 ( 249 Cm), Promethium-147 ( 147 Pm), Uranium-238 ( 238 U), Thorium-232 ( 232 Th), Radium-226 226 Ra), Bismuth-210 ( 210 Bi), Neptunium-237 ( 237 Np), Europium-152 ( 152 Eu), Francium-223 223 Fr), Astatine-210 ( 210 At), Protactinium-231 ( 231 Pa), Einium-253 ( 253 Es), Californium-252 ( 252 Cf) and Berkelium-249 249 One or more of the following (Bk). In another example, radioactive isotopes may include isotopes that emit beta rays, such as tritium (Bk). 3 H), Calcium-45 ( 45 Ca), Nickel-63 ( 63 Ni), Copper-67 ( 67 Cu), Strontium-90 ( 90 Sr), Promethium-147 ( 147 Pm), Osmium-194 ( 194 OS), Thulium-171 171 Tm), Tantalum-179 ( 179 Ta), Cadmium-109 ( 109 Cd), germanium-68 ( 68 Ge), Cerium-159 ( 159 Ce) and tungsten-181 ( 181 One or more of the following (W). In another example, the radioactive isotope may include isotopes that emit gamma rays, such as cobalt-60 (W). 60 Co), Cesium-137 137 Cs), Iodine-131 ( 131 I), Gallium-67 ( 67 Ga) and thallium-201 ( 201One or more of the following (Tl). The radioactive isotopes contained in the radioactive source 120 may include isotopes that emit alpha rays. The radioactive isotopes contained in the radioactive source 120 may include isotopes that emit beta rays. The radioactive isotopes contained in the radioactive source 120 may include at least one of isotopes that emit alpha rays and isotopes that emit beta rays. The radioactive isotopes contained in the radioactive source 120 may include one or more of isotopes that emit alpha rays, isotopes that emit beta rays, and isotopes that emit gamma rays.

[0066] In one instance, the radioactive source 120 can be manufactured by one or more of electroplating (electroplating), electroless plating, and chemical vapor deposition (CVD), but is not limited thereto. Among these methods, electroplating (electroplating) may be suitable when radiation shielding and worker safety are taken into consideration.

[0067] In one instance, the radioactive source 120 can be formulated into an electroplating solution for electroplating. For example, when nickel-63 ( 63 When Ni is used as a radioactive source 120, it can be detected by irradiating nickel-62 with neutrons. 62 Ni) to produce nickel-63 ( 63 Ni), then chlorinate it to produce 63 NiCl2 is used to manufacture nickel-63 ( 63 Ni) electroplating solution. Alternatively, you can first use nickel chloride-62 ( 62 Ni) to produce 62 NiCl2, then irradiated with neutrons to produce a product containing 63 Nickel-63 in NiCl2 ( 63 Ni electroplating solution.

[0068] In one instance, the electroplating solution may further contain additives, such as pH adjusters and pH stabilizers, which can help to uniformly form the radiation source 120 by controlling the electroplating speed or growth rate.

[0069] The radioactive cell 100 of an exemplary embodiment of the present invention may include an energy conversion layer 130, which surrounds at least a portion of the radioactive source 120 and is disposed between the electrode layer 110 and the radioactive source 120.

[0070] In one example, the energy conversion layer 130 can form electron-hole pairs using beta rays emitted from the radiation source 120. In another example, the energy conversion layer 130 can be an inorganic layer, an organic layer, an organic-inorganic hybrid layer, a dye-sensitized layer, or a combination thereof, and can generate electrical energy by forming electron-hole pairs using beta rays.

[0071] In one instance, the inorganic layer may include an inorganic material that generates electrical energy when exposed to light. There are no particular limitations on the inorganic material, but it may include one or more of silicon, monocrystalline silicon, polycrystalline silicon, amorphous silicon, InGaSe, CuSe, InSe, InGaP, GaAs, chalcopyrite compounds, perovskite compounds, and kesterite compounds.

[0072] InGaSe can include one or more of In, In4Se3, InSe, In2Se3, GaSe, Ga2Se3, and Se, or a mixture thereof. CuSe can include one or more of Cu, Cu2Se, CuSe2, and Se, or a mixture thereof. InSe can include one or more of In, In4Se3, InSe, In2Se3, and Se, or a mixture thereof. Chalcopyrite compounds can include, for example, one of CuAlS2, CuAlSe2, CuAlTe2, CuGaS2, CuGaSe2, CuGaTe2, CuInS2, CuInSe2, CuInTe2, AgAlS2, AgAlSe2, AgAlTe2, AgGaS2, AgGaSe2, AgGaTe2, AgInS2, AgInSe2, and AgInTe2. Perovskite compounds can include at least one of SrTiO3 and CaTiO3, for example. Zinc chrystanite compounds can include, for example, group I2-II-IV-VI4 zinc chrystanite compounds. Specifically, the zinc sterinite compound may include one or more of Cu2ZnSnS4, Cu2ZnSnSe4, Cu2ZnGeS4, Cu2ZnGeSe4, Cu2MnSnS4, Cu2MnSnSe4, Cu2MnGeS4, Cu2MnGeSe4, Ag2ZnSnS4, Ag2ZnSnSe4, Ag2ZnGeS4, Ag2ZnGeSe4, Ag2MnSnS4, Ag2MnSnSe4, Ag2MnGeS4, and Ag2MnGeSe4.

[0073] The organic layer may include organic materials that generate electrical energy by receiving light. Inorganic materials are not particularly limited, but may include fullerenes (C... 60Compounds, phenanthrene derivatives (e.g., 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrene (BCP)), phenylpyridine derivatives (e.g., 4,6-bis(3,5-di-4-pyridylphenyl)-2-methylpyrimidine (B4PymPm) or tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB)), thiophene derivatives (e.g., poly(3-hexylthiophene-2,5-diyl) (P3HT)), phthalocyanine derivatives, porphyrin derivatives, triarylamine derivatives, carbazole derivatives, and oligothiophenes, one or more of these.

[0074] The organic-inorganic hybrid layer may include organic-inorganic hybrid materials that receive light and generate electrical energy. Organic-inorganic hybrid materials may include, but are not particularly limited to, organic-inorganic perovskite compounds. For example, organic-inorganic hybrid materials may include, for example, halide-based organic-inorganic perovskite compounds. Organic-inorganic hybrid materials may include CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3SnI3, CH3NH3SnBr3, CH3NH3SnCl3, CH3NH3PbI (3-x) Cl x CH3NH3PbI (3-x) Br x CH3NH3PbBr (3-x) Cl x CH3NH3Pb (1-y) Sn y I3, CH3NH3Pb (1-y) Sn y Br3, CH3NH3Pb (1-y) Sn y Cl3, CH3NH3Pb (1-y) Sn y I (3-x) Cl x CH3NH3Pb (1-y) Sn y I (3-x) Br x and CH3NH3Pb (1-y) Sn y Br (3-x) Cl x One or more of (0≤x≤3, 0≤y≤1). Organic-inorganic hybrid materials may include those in which CFH2NH3, CF2HNH3, CF3NH3 or NH2CH=NH2 are used instead of CH3NH3 in the above compounds.

[0075] The dye-sensitized layer may contain a dye that generates electrical energy when exposed to light. The dye is not particularly limited, but may include one or more of ruthenium complexes, dihydroindole organic dyes, and natural dyes. Ruthenium complexes may contain at least one of, for example, N3 and N719. Dihydroindole organic dyes may include, for example, D149. Natural dyes may be extracted from fruits or vegetables and may include one or more of anthocyanins, chlorophyll, β-carotene, curcumin, betaine, and rosmarinic acid.

[0076] In one instance, the energy conversion layer 130 may include a scintillator that absorbs the energy of radiation generated from the radiation source 120 and converts it into light or electrical energy.

[0077] For example, the energy conversion layer 130 may include a scintillator at least internally. In another example, the energy conversion layer 130 may include a thin film layer comprising a scintillator disposed on at least one surface.

[0078] In one instance, the scintillator is not particularly limited, but may include one or more inorganic and organic compounds. Inorganic compounds may include one or more of, for example, NaI(Tl), CsI(Tl), GoS, CsI(Tl), CsI(Na), CsI (pure), CsF, KI(Tl), LiI(Eu), BGO, BaF2, CaF2(Eu), ZnS(Ag), CaWO4, CdWO4, (Y3Al5O) 12 Organic compounds may include one or more of the following: anthracene (Ce), GSO, LSO, GAGG:Ce, ZnO (Ga), LaCl3 (Ce), and LaBr3 (Ce).

[0079] In one example, the energy conversion layer 130 may include a type I semiconductor 131 and a type II semiconductor 132. One of the type I semiconductor 131 and the type II semiconductor 132 may be a P-type semiconductor and the other may be an N-type semiconductor. That is, the type I semiconductor 131 and the type II semiconductor 132 may be different types from each other. For example, when the type I semiconductor 131 is a P-type semiconductor, the type II semiconductor 132 may be an N-type semiconductor, and when the type I semiconductor 131 is an N-type semiconductor, the type II semiconductor 132 may be a P-type semiconductor. In one example, each of the plurality of radioactive unit cells 100 may independently include a type I semiconductor 131 and a type II semiconductor 132, and whether each type I semiconductor 131 is a P-type semiconductor (or each type II semiconductor 132 is an N-type semiconductor) or an N-type semiconductor (or a type II semiconductor 132 is a P-type semiconductor) may be changed according to the design.

[0080] In this specification, the P-type semiconductor may be, for example, silicon or diamond doped with a Group 13 element of the periodic table such as boron (B), aluminum (Al), gallium (Ga), or indium (In), or may be a compound semiconductor doped with a Group 13 element of the periodic table such as boron (B), aluminum (Al), gallium (Ga), or indium (In). In this specification, the compound semiconductor refers to a semiconductor composed of two or more elements and may include, for example, silicon carbide (SiC), silicon dioxide (SiO2), aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), gallium nitride (GaN), etc. In this specification, the N-type semiconductor may be, for example, silicon or diamond doped with a Group 15 element of the periodic table such as nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), or may be a compound semiconductor doped with a Group 15 element of the periodic table such as nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb).

[0081] In one example, each of the type-I semiconductor 131 and the type-II semiconductor 132 may independently include a metal oxide having the chemical formula AMO3. Here, A may be one selected from La, Ba, Sr, and K, and M may be one selected from Al, In, Ga, Ti, Sn, Hf, Ta, and Zr. In some cases, each of the type-I semiconductor 131 and the type-II semiconductor 132 may independently include multiple different types of metal oxides. Different types may represent different elements of A or M. In one example, in such a case, the type-I semiconductor 131 and the type-II semiconductor 132 may form a homojunction with each other.

[0082] For example, each of the type-I semiconductor 131 and the type-II semiconductor 132 may independently include BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3 (where 0 < x < 1), Ba 1-x La x SnO3 (where 0 < x < 1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3 (where 0 < x < 1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x (where 0 < x < 1) and LaAlO3. One or more of them.

[0083] In one example, the electrode layer 110 and the energy conversion layer 130 can be fabricated by, but not limited to, deposition or epitaxial growth. Here, deposition can be one or more of physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).

[0084] In one embodiment, the first electrode 111 may surround at least a portion of the type I semiconductor 131, and the second electrode 112 may surround at least a portion of the type II semiconductor 132. In another embodiment, the electrode insulating layer 113 may surround at least a portion of the boundary between the type I semiconductor 131 and the type II semiconductor 132. When the first electrode 111 and the second electrode 112 are in contact with each other, by surrounding at least a portion of the boundary between the type I semiconductor 131 and the type II semiconductor 132, the electrode insulating layer 113 can minimize electrical problems such as short circuits.

[0085] In one example, a type I semiconductor 131 may surround at least a portion of the radiation source 120. In another example, a type II semiconductor 132 may surround at least a portion of the type I semiconductor 131. This arrangement of the type I semiconductor 131 and the type II semiconductor 132 makes it possible to improve the power efficiency of the radioactive cell 10 by increasing the contact surface area. In one example, the power efficiency of the radioactive cell 10 may be advantageous when beta rays generated from the radiation source 120 are incident on the widest possible area of ​​the energy conversion layer 130.

[0086] In one example, the first electrode 111 can contact at least a portion of the type I semiconductor 131. Furthermore, the second electrode 112 can contact at least a portion of the type II semiconductor 132. Additionally, the radiation source 120 can contact at least a portion of the type I semiconductor 131.

[0087] In an exemplary embodiment of the present invention, the radioactive unit cell 100 may include a connector 200, which is disposed in at least one gap among the gaps between any adjacent radioactive unit cells 100A and 100B of the plurality of radioactive unit cells 100, and electrically connects the adjacent electrodes 110A and 110B of the radioactive unit cells 100A and 100B.

[0088] In one example, the connector 200 may include a conductive material. In this case, the conductive material may include one or more selected from the group consisting of tin (Sn), indium (In), bismuth (Bi), antimony (Sb), copper (Cu), silver (Ag), zinc (Zn), and lead (Pb). The number, spacing, arrangement, and shape of the connectors 200 are not limited to those shown in the figures and can be varied according to the design. In one example, the connector 200 may have a solder ball shape or a solder bump shape.

[0089] In one example, adjacent radioactive cell elements 100A and 100B may include a first radioactive cell element 100A and a second radioactive cell element 100B. The configurations included in each of the radioactive cell elements 100A and 100B may refer to the above description or the description below, provided they are not contradictory. The first radioactive cell element 100A may include: an electrode 110A, which includes a first-1 electrode 111A, a first-2 electrode 112A, and an electrode insulating layer 113; a radioactive source 120; and an energy conversion layer 130. The second radioactive cell element 100B may include: an electrode 110B, which includes a second-1 electrode 111B, a second-2 electrode 112B, and an electrode insulating layer 113; a radioactive source 120; and an energy conversion layer 130. In one example, as described above, adjacent radioactive cell elements 100A and 100B may be electrically connected via a connector 200.

[0090] Reference Figure 1 The width LT of the radioactive cell 100 can be greater than the thickness TH of the radioactive cell 100. Here, the width LT of the radioactive cell 100 can refer to the width in the first intersecting direction D2 or the second intersecting direction D3, and the thickness TH of the radioactive cell 100 can refer to the width in the stacking direction D1. This allows for a more densely stacked structure of the radioactive cell 100.

[0091] In one example, the ratio of the thickness TH of the radioactive cell 100 to the width LT of the radioactive cell 100 (TH / LT) can be 0.005 to 0.01, 0.0055 to 0.015, or 0.006 to 0.02. This allows for a more densely stacked structure of the radioactive cell 100. Furthermore, the width LT of the radioactive cell 100 can be, for example, 1 cm to 50 cm, 5 cm to 30 cm, or 10 cm to 20 cm. Additionally, the thickness TH of the radioactive cell 100 can be, for example, 10 μm to 300 μm, 50 μm to 250 μm, or 100 μm to 200 μm.

[0092] Reference Figure 2 In one example, when viewed from the stacking direction D1, the energy conversion layer 130 may surround at least a portion of the radiation source 120. Furthermore, when viewed from the stacking direction D1, the energy conversion layer 130 and the radiation source 120 may not overlap each other. In another example, when viewed from the stacking direction D1, the electrode layer 110 may surround at least a portion of the energy conversion layer 130. Furthermore, when viewed from the stacking direction D1, the electrode layer 110 and the energy conversion layer 130 may not overlap each other.

[0093] Reference Figure 2 In one example, when viewed in the stacking direction D1, the electrode insulating layer 113 may be disposed between the first electrode 111 and the second electrode 112. Furthermore, when viewed in the stacking direction D1, the insulating layer 113 may not overlap with the first electrode 111 and the second electrode 112.

[0094] Figure 3 This is a perspective view showing at least a portion of the radioactive cell 100 of a radioactive battery 10 according to an exemplary embodiment of the present invention. Figure 4 This is a plan view showing at least a portion of the radioactive cell 100 of a radioactive battery 10 according to an exemplary embodiment of the present invention.

[0095] In one example, the power conversion layer 130 may include a first power conversion layer 130-1 and a second power conversion layer 130-2, each comprising a type I semiconductor 131 and a type II semiconductor 132. That is, the power conversion layer 130 may have a multilayer structure, and in this case, the multilayer structure may refer to a structure in which the layers do not overlap when viewed in the stacking direction D1.

[0096] In one instance, a first energy conversion layer 130-1 may surround at least a portion of the radioactive source 120, and a second energy conversion layer 130-2 may surround at least a portion of the first energy conversion layer 130-1.

[0097] In one example, the type I semiconductor 131-2 of the second energy conversion layer 130-2 may surround at least a portion of the type II semiconductor 132-1 of the first energy conversion layer 130-1. In another example, the type II semiconductor 132-2 of the second energy conversion layer 130-2 may surround at least a portion of the type I semiconductor 131-1 of the first energy conversion layer 130-1. This arrangement can improve the power efficiency of the radioactive cell 10 by increasing the contact surface area between the type I semiconductor 131 and the type II semiconductor 132.

[0098] Figure 5 This is a plan view illustrating at least a portion of the radioactive cell 100 of a radioactive battery 10 according to an exemplary embodiment of the present invention. In one example, at least some of the plurality of radioactive cell 100A and 100B may include a dielectric layer 140 surrounding at least a portion of the radioactive source 120.

[0099] In one instance, dielectric layer 140 may include a dielectric material. In one instance, the dielectric material is not specifically limited, as long as it is used in the field. Dielectric layer 140 can optimize the arrangement of radiation source 120 and can further improve electrical stability by minimizing leakage current.

[0100] In one example, dielectric layer 140 may include a low-k dielectric with a dielectric constant less than 3.9. There are no specific limitations on the low-k dielectric, as long as it is used in the art, but it may include one or more selected from the group consisting of: tetraethyl orthosilicate (FTEOS), hydrogenated silsesquioxane (HSQ), bisbenzocyclobutene (BCB), tetramethyl orthosilicate (TMOS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisiloxane (HMDS), tri(trimethylsilyl borate) (TMSB), diacetoxydi-tert-butylsiloxane (DADBS), tri(trimethylsilyl phosphate) (TMSP), polytetrafluoroethylene (PTFE), Tonen SilaZen (TOSZ), fluorinated silicate glass (FSG), polyimide nanofoam, polypropylene oxide, carbon-doped silica (CDO), organosilicon glass (OSG), SiLK, amorphous fluorocarbon materials, silica aerogel, silica dry gel, and mesoporous silica. When the dielectric layer 140 includes a low-k dielectric, leakage current can be minimized, and, for example, β rays generated from the radiation source 120 can be efficiently transmitted to the energy conversion layer 130.

[0101] In one example, dielectric layer 140 may include a high-k dielectric with a dielectric constant of 3.9 or higher. The high-k dielectric is not particularly limited, as long as it is used in the art, but may include, for example, one or more of the group consisting of boron nitride, hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, or lead zinc niobate. When dielectric layer 140 includes a high-k dielectric, leakage current can be minimized, and a high-integration-density radioactive cell 100 can be designed.

[0102] It may include one or more of the following groups: silicates (e.g., TEOS), silicon nitride (SiN), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0103] Figure 6 This is a perspective view showing at least a portion of a radioactive battery 10 according to an exemplary embodiment of the present invention. Figure 7 This is a plan view showing at least a portion of the insulating layer 300 of a radioactive battery 10 according to an exemplary embodiment of the present invention. Figure 8 This is a plan view showing at least a portion of the insulating layer 300 of a radioactive battery 10 according to an exemplary embodiment of the present invention.

[0104] In one example, multiple connectors 200 can be provided. By arranging the connectors 200, the connection methods of the electrodes 110A and 110B of adjacent radioactive cell cells 100A and 100B can be changed. More specifically, by arranging the connectors 200, adjacent radioactive cell cells 100A and 100B can be electrically connected in series or in parallel.

[0105] Reference Figure 1 When adjacent radioactive cell units 100A and 100B are connected in series, some connectors 200 can electrically connect the first electrode 111A of one radioactive cell unit 100A and the second electrode 112B of another radioactive cell unit 100B, while other connectors 200 can electrically connect the second electrode 112A of one radioactive cell unit 100A and the first electrode 111B of another radioactive cell unit 100B. When adjacent radioactive cell units 100A and 100B are connected in series, the potential difference of the radioactive cell 10 can be made greater than the potential difference of a single radioactive cell unit or the potential difference of radioactive cell units connected in parallel, thus increasing the electrical output applied to the load.

[0106] Reference Figure 6 In one example, when adjacent radioactive cell units 100A and 100B are connected in parallel, some connectors 200 can electrically connect the first electrode 111A of one radioactive cell unit 100A and the first electrode 111B of the other radioactive cell unit 100B, while other connectors 200 can electrically connect the second electrode 112A of one radioactive cell unit 100A and the second electrode 112B of the other radioactive cell unit 100B. When adjacent radioactive cell units 100A and 100B are connected in parallel, the lifespan of the radioactive cell 10 can be increased compared to a single radioactive cell unit or radioactive cell units connected in series.

[0107] In one example, the radioactive cell 10 may include an insulating layer 300 disposed in at least one of the gaps between adjacent radioactive cell elements 100A and 100B. In another example, the insulating layer 300 may be disposed between adjacent radioactive cell elements 100 with connectors 200. Simultaneously, the insulating layer 300 can prevent short circuits caused by contact between electrodes and can prevent accidental damage caused by the transmission of beta rays generated from the radiation source 120 of each radioactive cell element 100 to other radioactive cell elements 100.

[0108] In one instance, the insulating layer 300 is not specifically limited as long as it is made of an electrically insulating material, but may include one or more of the following: silicates (e.g., TEOS), silicon nitride (SiN), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0109] In one example, the radioactive source 120 may be disposed through the insulating layer 300 in the stacking direction D1. That is, the radioactive battery 10 may include a radioactive source 120 extending in the stacking direction D1 of the radioactive cell 100.

[0110] In one example, the connector 200 may be disposed through the insulating layer 300 in the stacking direction D1. That is, the connector 200 may include: an exposed portion protruding from the surface of the insulating layer 300 through the insulating layer 300, and an embedded portion embedded in the insulating layer 300. In one example, the connector 200 may electrically connect the electrodes 110A and 110B of adjacent radioactive cell cells 100A and 100B through the exposed portions protruding from the two surfaces of the insulating layer 300. Furthermore, in one example, the position of the connector 200 may be fixed by the embedded portion embedded in the insulating layer 300, and the electrodes 110A and 110B of adjacent radioactive cell cells 100A and 100B may be stably electrically connected.

[0111] In one example, the connector 200 may be positioned in at least a portion of a through-hole penetrating the insulating layer 300. Here, the through-hole in which the connector 200 is disposed may be referred to as the aforementioned embedded portion. The through-hole may be perforated along the stacking direction D1. The through-hole may be manufactured by physical penetration method, wet etching, dry etching, or photolithography, but is not limited thereto. The connector 200 may be disposed in at least a portion of the through-hole by applying a paste containing a conductive material or by printing.

[0112] Reference Figure 8 In one example, the insulating layer 300 may include a dielectric layer 220 that surrounds at least a portion of the radiation source 120 disposed in the insulating layer 300.

[0113] In this case, the dielectric layer 220 disposed in the insulating layer 300 may include a dielectric material. In one example, there is no specific limitation on the dielectric material, as long as it is used in the field. The dielectric layer 220 can optimize the arrangement of the radiation source 120 and can further improve electrical stability by minimizing the occurrence of leakage current.

[0114] In one example, the dielectric layer 220 disposed in the insulating layer 300 may include a low-k dielectric with a dielectric constant of less than 3.9. There are no specific limitations on low-k dielectrics, as long as they are used in the field, but they may include one or more selected from the group consisting of: tetraethyl orthosilicate (FTEOS), hydrogenated silsesquioxane (HSQ), bisbenzocyclobutene (BCB), tetramethyl orthosilicate (TMOS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisiloxane (HMDS), tri(trimethylsilyl borate) (TMSB), diacetoxydi-tert-butylsiloxane (DADBS), tri(trimethylsilyl phosphate) (TMSP), polytetrafluoroethylene (PTFE), Tonen SilaZen (TOSZ), fluorinated silicate glass (FSG), polyimide nanofoam, polypropylene oxide, carbon-doped silica (CDO), organosilicon glass (OSG), SiLK, amorphous fluorocarbon materials, silica aerogel, silica dry gel, and mesoporous silica. When the dielectric layer 220 disposed in the insulating layer 300 includes a low-k dielectric, leakage current can be minimized, and for example, β rays generated from the radiation source 120 can be efficiently transmitted to the energy conversion layer 130.

[0115] In one example, the dielectric layer 220 disposed in the insulating layer 300 may include a high-k dielectric with a dielectric constant of 3.9 or higher. There are no particular limitations on the high-k dielectric, as long as it is used in the art; however, it may include, for example, one or more of the group consisting of boron nitride, hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, or lead zinc niobate. When the dielectric layer 220 disposed in the insulating layer 300 includes a high-k dielectric, leakage current can be minimized, and a high-integration-density radioactive cell 100 can be designed.

[0116] In one example, for the dielectric layer 220 disposed in the insulating layer 300, at least some of the aforementioned plurality of radioactive unit cells 100A, 100B can be integrally connected with the dielectric layer 140 surrounding at least a portion of the radioactive source 120.

[0117] Figure 9 This is a perspective view showing at least a portion of a radioactive battery 10 according to an exemplary embodiment of the present invention. Figure 10 This is a plan view showing at least a portion of the insulating layer 300 of a radioactive battery 10 according to an exemplary embodiment of the present invention.

[0118] In one example, the insulating layer 300 may include a semiconductor layer 210 that surrounds at least a portion of the radiation source 120 disposed within the insulating layer 300. In one example, the semiconductor layer 210 may be exposed from the insulating layer 300 in the stacking direction D1. Furthermore, the semiconductor layer 210 may be in contact with the energy conversion layer 130 of adjacent radioactive cell 100A and 100B. With this arrangement, β rays generated from the radiation source 120 can be incident on the widest possible area of ​​the energy conversion layer 130, thereby improving the power efficiency of the radioactive cell 10.

[0119] In one example, semiconductor layer 210 may include a type A semiconductor 211 and a type B semiconductor 212. One of the type A semiconductor 211 and the type B semiconductor 212 may be a P-type semiconductor, while the other may be an N-type semiconductor. That is, the type A semiconductor 211 and the type B semiconductor 212 may be different types from each other. For example, when the type A semiconductor 211 is a P-type semiconductor, the type B semiconductor 212 may be an N-type semiconductor, and when the type A semiconductor 211 is an N-type semiconductor, the type B semiconductor 212 may be a P-type semiconductor.

[0120] In one example, type A semiconductor 211 may surround at least a portion of the radiation source 120 disposed in the insulating layer 300, and type B semiconductor 212 may surround at least a portion of type A semiconductor 211. This arrangement of type A semiconductor 211 and type B semiconductor 212 makes it possible to improve the power efficiency of the radioactive cell 10 by increasing the contact surface area.

[0121] Figure 11 This is a plan view showing at least a portion of the insulating layer 300 of a radioactive battery 10 according to an exemplary embodiment of the present invention. Figure 12 This is a perspective view showing at least a portion of a radioactive battery 10 according to an exemplary embodiment of the present invention.

[0122] In one example, semiconductor layer 210 may include a first semiconductor layer 210-1 and a second semiconductor layer 210-2, each of which includes a type A semiconductor 211 and a type B semiconductor 212. That is, semiconductor layer 210 may have a multilayer structure, and in this case, the multilayer structure may refer to a structure in which the layers do not overlap when viewed in the stacking direction D1.

[0123] In one example, a first semiconductor layer 210-1 may surround at least a portion of the radiation source 120, and a second semiconductor layer 210-2 may surround at least a portion of the first semiconductor layer 210-1.

[0124] In one example, the type A semiconductor 211-2 of the second semiconductor layer 210-2 may surround at least a portion of the type B semiconductor 212-1 of the first semiconductor layer 210-1. In another example, the type B semiconductor 212-2 of the second semiconductor layer 210-2 may surround at least a portion of the type A semiconductor 211-2 of the first semiconductor layer 210-1. Such an arrangement can improve the power efficiency of the radioactive cell 10 by increasing the contact surface area between the type A semiconductor 211 and the type B semiconductor 212.

[0125] In one example, the first semiconductor layer 210-1 may be in contact with at least a portion of the first energy conversion layer 130-1 in the stacking direction D1. In another example, the second semiconductor layer 210-2 may be in contact with at least a portion of the second energy conversion layer 130-2 in the stacking direction D1. Such an arrangement can improve the power efficiency of the radioactive cell 10 by increasing the contact surface area between the type A semiconductor 211 and the type B semiconductor 212.

[0126] In one example, the type A semiconductor 211-1 and type B semiconductor 212-1 of the first semiconductor layer 210-1 can contact at least a portion of the type I semiconductor 131-1 and type II semiconductor 132-1 of the first energy conversion layer 310-1, respectively. That is, the type A semiconductor 211-1 of the first semiconductor layer 210-1 can contact at least a portion of the type I semiconductor 131-1 of the first energy conversion layer 310-1, and the type B semiconductor 212-1 of the first semiconductor layer 210-1 can contact at least a portion of the type II semiconductor 132-1 of the first energy conversion layer 310-1. In another example, the type A semiconductor 211-2 and type B semiconductor 212-2 of the second semiconductor layer 210-2 can contact at least a portion of the type I semiconductor 131-2 and type II semiconductor 132-2 of the second energy conversion layer 130-2, respectively. That is, the type A semiconductor 211-2 of the second semiconductor layer 210-2 can contact at least a portion of the type I semiconductor 131-2 of the second energy conversion layer 310-2, and the type B semiconductor 212-2 of the second semiconductor layer 210-2 can contact at least a portion of the type II semiconductor 132-2 of the second energy conversion layer 310-2. By maximizing the contact surface area between the type I semiconductor 131, type II semiconductor 132, type A semiconductor 211, and type B semiconductor 212, this arrangement can improve the power efficiency of the radioactive cell 10.

[0127] In one example, the type A semiconductor 211-1 of the first semiconductor layer 210-1 may have a different type than the type I semiconductor 131-1 of the first energy conversion layer 130-1, and the type B semiconductor 212-1 of the first semiconductor layer 210-1 may have a different type than the type II semiconductor 132-1 of the first energy conversion layer 130-1. In another example, the type A semiconductor 211-2 of the second semiconductor layer 210-2 may have a different type than the type I semiconductor 131-2 of the second energy conversion layer 130-2, and the type B semiconductor 212-2 of the second semiconductor layer 210-2 may have a different type than the type II semiconductor 132-2 of the second energy conversion layer 130-2. By maximizing the contact surface area between the type I semiconductor 131, type II semiconductor 132, type A semiconductor 211, and type B semiconductor 212, this arrangement can improve the power efficiency of the radioactive cell 10.

[0128] Figure 13 This is a perspective view illustrating at least a portion of a radioactive battery 10 according to an exemplary embodiment of the present invention. The following description may be referenced. Figures 1 to 12 The description is acceptable as long as it is not contradictory.

[0129] In one example, the radioactive battery 10 may include: a plurality of radioactive cell 100, each including an electrode layer 110, a radiation source 120, and an energy conversion layer 130; an insulating layer 300 disposed in at least one gap between any adjacent radioactive cell 100A and 100B of the plurality of radioactive cell 100, and disposed at positions corresponding to the electrode layers 110A and 110B of adjacent radioactive cell 100A and 100B, respectively; and a connecting portion 500, including: a first connecting portion 510 electrically connecting the first electrodes 111A and 111B of adjacent radioactive cell 100A and 100B, and a second connecting portion 520 electrically connecting the second electrodes 112A and 112B of adjacent radioactive cell 100A and 100B, respectively.

[0130] In one example, the connection portion 500 may include a connection point electrically connected to the electrode 110 of each of the plurality of radioactive cell 100, and a cluster connection point formed by these connection points. Specifically, the first connection portion 510 may include a first connection point electrically connected to the first electrode 111 of each of the plurality of radioactive cell 100, and a first cluster connection point formed by these first connection points. Similarly, the second connection portion 520 may include a second connection point electrically connected to the second electrode 112 of each of the plurality of radioactive cell 100, and a second cluster connection point formed by these second connection points. In one example, the first and second cluster connection points may be electrically connected to a load, thereby allowing the radioactive cell 10 to supply power to the load.

[0131] In one example, the energy conversion layers 130 of at least some of the multiple radioactive cell elements 100 may extend into the region where the insulating layer 300 is disposed. In one example, adjacent radioactive cell elements 100A and 100B may be electrically connected via a connecting portion 500 instead of the aforementioned connecting body 200, and the energy conversion layers 130 included in adjacent radioactive cell elements 100A and 100B may be connected to each other. In one example, the energy conversion layers 130 included in adjacent radioactive cell elements 100A and 100B may be integrally formed.

[0132] According to an exemplary embodiment of the present invention, the power equipment may include a radioactive cell 10 and a shielding member housing the radioactive cell 10. The shielding member may include a material capable of shielding or reflecting radiation. For example, the shielding member may include one or more of the following: metallic materials, such as copper, silver, and aluminum; and polymeric materials, such as polyolefins, polyesters, and poly(meth)acrylates. Polyolefins may include, but are not limited to, one or more of polyethylene, polypropylene, and ethylene-propylene copolymers. Polyesters may include, but are not limited to, polyethylene terephthalate. Poly(meth)acrylates may include, but are not limited to, ethylene-(meth)acrylate copolymers. For example, if the radioactive source 120 includes an isotope that emits gamma rays, the shielding member may contain at least one of lead (Pb) and concrete. The shielding member may minimize electromagnetic interference, the occurrence of parasitic circuits, or power loss caused by the operation of the multiple radioactive cell cores 100 and connectors 200.

[0133] While various exemplary embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that the scope of the invention is not limited thereto, and that the invention can be changed and modified in various ways without departing from the spirit of the invention as described in the claims. Furthermore, some components may be removed from the above exemplary embodiments, and exemplary embodiments may be combined with each other.

[0134] [Figure Labels]

[0135] 10…Radioactive batteries

[0136] 100…Radioactive unit cell

[0137] 110…Electrode layer

[0138] 120…radioactive source

[0139] 130… Energy Conversion Layer

[0140] 140…dielectric layer

[0141] 200…connector

[0142] 210… Semiconductor layer

[0143] 300… insulation layer

[0144] 500…Connection Section

[0145] [Abstract with attached figures]

[0146] Figure 1 .

Claims

1. A radioactive battery, comprising: Multiple radioactive unit cells, each radioactive unit cell including an electrode layer, a radiation source, and an energy conversion layer, wherein the electrode layer includes a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode, and the energy conversion layer surrounds at least a portion of the radiation source and is disposed between the electrode layer and the radiation source, and the multiple radioactive unit cells are stacked along a unidirectional stacking direction; and A connector is disposed in at least one gap among the gaps between any adjacent radioactive unit cells of the plurality of radioactive unit cells, and electrically connects the respective electrode layers of the adjacent radioactive unit cells.

2. The radioactive battery as claimed in claim 1, wherein, The electrode layer surrounds at least a portion of the energy conversion layer.

3. The radioactive battery as described in claim 2, wherein, The energy conversion layer includes type I semiconductors and type II semiconductors. The first electrode surrounds at least a portion of the type I semiconductor, and The second electrode surrounds at least a portion of the type II semiconductor.

4. The radioactive battery as described in claim 3, wherein, The electrode insulating layer surrounds at least a portion of the boundary between the type I semiconductor and the type II semiconductor.

5. The radioactive battery as described in claim 3, wherein, The type I semiconductor surrounds at least a portion of the radiation source, and The type II semiconductor surrounds a portion of the type I semiconductor.

6. The radioactive battery as claimed in claim 2, wherein, The energy conversion layer includes a first energy conversion layer and a second energy conversion layer, each comprising a type I semiconductor and a type II semiconductor. The first energy conversion layer surrounds at least a portion of the radioactive source, and The second energy conversion layer surrounds at least a portion of the first energy conversion layer.

7. The radioactive battery as claimed in claim 6, wherein, The type I semiconductor of the second energy conversion layer surrounds at least a portion of the type II semiconductor of the first energy conversion layer, and the type II semiconductor of the second energy conversion layer surrounds at least a portion of the type I semiconductor of the first energy conversion layer.

8. The radioactive battery as claimed in claim 1, wherein, At least some of the plurality of radioactive unit cells also include a dielectric layer that surrounds at least a portion of the radioactive source.

9. The radioactive battery as claimed in claim 1, wherein, The connector includes multiple connectors, and Some connectors electrically connect the first electrode of one of the adjacent radioactive cell cells to the second electrode of the other radioactive cell cell, while other connectors electrically connect the second electrode of one of the adjacent radioactive cell cells to the first electrode of the other radioactive cell cell.

10. The radioactive battery as claimed in claim 1, wherein, The connector includes multiple connectors, and Some connectors electrically connect the first electrode of one radioactive cell and the first electrode of another radioactive cell in the adjacent radioactive cell, while other connectors electrically connect the second electrode of one radioactive cell and the second electrode of another radioactive cell in the adjacent radioactive cell.

11. The radioactive battery of claim 1, further comprising: An insulating layer is disposed in at least one of the gaps between the adjacent radioactive cell cores. The radiation source is disposed through the insulating layer in the stacking direction.

12. The radioactive battery of claim 11, wherein, The connector is disposed through the insulating layer in the stacking direction.

13. The radioactive battery of claim 11, wherein, The insulating layer further includes a dielectric layer that surrounds at least a portion of the radiation source disposed within the insulating layer.

14. The radioactive battery of claim 11, wherein, The insulating layer further includes a semiconductor layer that surrounds at least a portion of the radiation source disposed within the insulating layer.

15. The radioactive battery as claimed in claim 14, wherein, The semiconductor layer is exposed from the insulating layer in the stacking direction and contacts the energy conversion layer of each of the adjacent radioactive cell cells.

16. The radioactive battery of claim 14, wherein the semiconductor layer comprises type A semiconductors and type B semiconductors. The type A semiconductor surrounds at least a portion of the radiation source disposed in the insulating layer, and The type B semiconductor surrounds at least a portion of the type A semiconductor.

17. The radioactive battery of claim 14, wherein, The semiconductor layer includes a first semiconductor layer and a second semiconductor layer, each comprising a type A semiconductor and a type B semiconductor. A first semiconductor layer surrounds at least a portion of the radiation source disposed in the insulating layer, and The second semiconductor layer surrounds at least a portion of the first semiconductor layer.

18. The radioactive battery of claim 17, wherein, The type A semiconductor of the second semiconductor layer surrounds at least a portion of the type B semiconductor of the first semiconductor layer, and the type B semiconductor of the second semiconductor layer surrounds at least a portion of the type A semiconductor of the first semiconductor layer.

19. The radioactive battery of claim 18, wherein, The energy conversion layer includes a first energy conversion layer and a second energy conversion layer, each of which includes a type I semiconductor and a type II semiconductor. The first energy conversion layer surrounds at least a portion of the radiation source, and the second energy conversion layer surrounds at least a portion of the first energy conversion layer. and The first semiconductor layer is in contact with the first energy conversion layer in at least a portion of the stacking direction, and the second semiconductor layer is in contact with the second energy conversion layer in at least a portion of the stacking direction.

20. The radioactive battery of claim 19, wherein, The type I semiconductor of the second energy conversion layer surrounds at least a portion of the type II semiconductor of the first energy conversion layer, and the type II semiconductor of the second energy conversion layer surrounds at least a portion of the type I semiconductor of the first energy conversion layer; and The type A semiconductor and type B semiconductor of the first semiconductor layer are in contact with at least a portion of the type I semiconductor and type II semiconductor of the first energy conversion layer, respectively, and the type A semiconductor and type B semiconductor of the second semiconductor layer are in contact with at least a portion of the type I semiconductor and type II semiconductor of the second energy conversion layer, respectively.

21. The radioactive battery of claim 20, wherein, The A-type semiconductor of the first semiconductor layer and the I-type semiconductor of the first energy conversion layer are of different types, and the B-type semiconductor of the first semiconductor layer and the II-type semiconductor of the first energy conversion layer are of different types. and The types of the A-type semiconductor in the second semiconductor layer and the I-type semiconductor in the second energy conversion layer are different from each other, and the types of the B-type semiconductor in the second semiconductor layer and the II-type semiconductor in the second energy conversion layer are different from each other.

22. A radioactive battery comprising: Multiple radioactive unit cells, each radioactive unit cell including an electrode layer, a radiation source, and an energy conversion layer, wherein the electrode layer includes a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode, and the energy conversion layer surrounds at least a portion of the radiation source and is disposed between the electrode layer and the radiation source, and the multiple radioactive unit cells are stacked along a unidirectional stacking direction; An insulating layer is disposed in at least one gap among the gaps existing between any adjacent radioactive cell elements of the plurality of radioactive cell elements, and is disposed at a position corresponding to the respective electrode layer of the adjacent radioactive cell elements; and The connection portion includes a first connection portion electrically connecting the first electrode of each of the adjacent radioactive unit cells, and a second connection portion electrically connecting the second electrode of each of the adjacent radioactive unit cells.

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