Substrate processing apparatus and substrate processing method

CN122645162APending Publication Date: 2026-08-28EBARA CORP
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Patent Information

Application Number
CN202610213268.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2025-02-26
Filing Date
2026-02-13
Publication Date
2026-08-28

AI Technical Summary

Benefits of technology

[0013] According to the above-described manner of the present invention, it is possible to suppress the adhesion of debris from the polishing pad to the substrate during standby.

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Abstract

A substrate processing apparatus and a substrate processing method, the substrate processing apparatus including: a top ring, a swing cover fixed to the top ring, a turntable capable of mounting a polishing pad and rotating the polishing pad, and an atomizer that supplies a cleaning fluid to the polishing pad, when a head of the top ring is positioned at a handoff position at which a substrate is handed off, the swing cover is positioned between the substrate and the polishing pad, and when the head of the top ring is positioned at a polishing position at which the substrate is polished by the polishing pad, the swing cover does not overlap the polishing pad in plan view.
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Description

Technical Field

[0001] This application claims priority to Japanese Patent Application No. 2025-029344, filed on February 26, 2025, the contents of which are incorporated herein by reference.

[0002] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0003] Japanese Patent Application Publication No. 2024-131363 discloses a structure for preventing polishing slurry from adhering to rotating bodies such as polishing heads in a substrate processing apparatus for chemical mechanical polishing (CMP).

[0004] In CMP devices, polishing slurry (paste) and the like may be scattered from the rotating polishing pad due to centrifugal force, thus adhering to the substrate in standby mode. Summary of the Invention

[0005] The present invention was made in view of the above circumstances, and its object is to provide a substrate processing apparatus and a substrate processing method that can suppress the adhesion of fly-offs from the polishing pad to the substrate in standby mode.

[0006] Technical means for solving problems

[0007] To address the aforementioned issues, the substrate processing apparatus according to Embodiment 1 of the present invention comprises: a top ring having a top ring head for holding the substrate and for swinging; a swing cover fixed to the top ring; a turntable capable of mounting a polishing pad and rotating the polishing pad; and an atomizer supplying cleaning fluid to the polishing pad. When the top ring head is located at the junction position where the substrate is joined, the swing cover is located between the substrate and the polishing pad. When the top ring head is located at the polishing position where the substrate is polished by the polishing pad, the swing cover does not overlap with the polishing pad when viewed from above.

[0008] In embodiment 2 of the present invention, the substrate processing apparatus of embodiment 1 further includes a fixing cover, which, when viewed from above, is fixed at a position between the substrate and the polishing pad, and the fixing cover and the swing cover are positioned differently in the vertical direction.

[0009] In embodiment 3 of the present invention, in the substrate processing apparatus described in embodiment 1 or embodiment 2, the swing cover is bent or flexed when viewed from above.

[0010] In embodiment 4 of the present invention, the substrate processing apparatus according to any one of embodiments 1 to 3 further includes at least one cover cleaning nozzle, which sprays cover cleaning fluid onto the oscillating cover.

[0011] In embodiment 5 of the present invention, the substrate processing apparatus designed in any one of embodiments 1 to 3 further includes a first cover cleaning nozzle and a second cover cleaning nozzle. The first cover cleaning nozzle sprays cover cleaning liquid onto a first surface of the swing cover facing the top ring head, and the second cover cleaning nozzle sprays cover cleaning liquid onto a second surface of the swing cover opposite to the first surface.

[0012] Embodiment 6 of the present invention is a substrate processing method using the substrate processing apparatus as described in Embodiment 4 above, comprising: a grinding step in which the substrate is pressed against the grinding pad while the turntable is rotating; a moving step in which, after the grinding step, the substrate held by the top ring head is moved by swinging the top ring head from the grinding position to the junction position; a releasing step in which, after the moving step, the substrate is released from the top ring head at the junction position; a top ring cleaning step in which, after the releasing step, the top ring head is cleaned; a pad cleaning step in which the cleaning fluid is supplied from the atomizer to the grinding pad to clean the grinding pad; a holding step in which, after the top ring cleaning step, a substrate different from the substrate is held by the top ring head; and a cover cleaning step in which the cover cleaning liquid is sprayed from the cover cleaning nozzle to clean the swinging cover, wherein the cover cleaning step is performed simultaneously with at least one of the releasing step, the top ring cleaning step, the pad cleaning step, and the holding step.

[0013] According to the above-described manner of the present invention, it is possible to suppress the adhesion of debris from the polishing pad to the substrate during standby. Attached Figure Description

[0014] Figure 1 This is a top view showing the overall schematic structure of the substrate processing apparatus according to this embodiment.

[0015] Figure 2 This is a perspective view showing the structure around the top ring involved in this embodiment.

[0016] Figure 3 yes Figure 2 View in direction III.

[0017] Figure 4 This is a top view showing the top ring in the grinding position in the substrate grinding apparatus according to this embodiment.

[0018] Figure 5 It means Figure 4 A top view of the top ring in the state of moving to the junction position.

[0019] Figure 6 It means Figure 5 A 3D view of the area surrounding the swing shield.

[0020] Figure 7 From Figure 5 A rough cross-sectional view of the perimeter of the swing shield observed along line VII-VII.

[0021] Figure 8 It means Figure 3 A diagram showing a deformed example of the swing shield.

[0022] Figure 9 This is a diagram illustrating the topics covered in previous structures. Detailed Implementation

[0023] Hereinafter, the substrate processing apparatus and substrate processing method of this embodiment will be described based on the accompanying drawings.

[0024] Figure 1 The substrate processing apparatus 1 shown is a chemical mechanical polishing (CMP) apparatus for grinding the surface of a substrate W, such as a silicon wafer, to a flat surface. The substrate processing apparatus 1 has a rectangular box-shaped housing 2.

[0025] (Direction definition)

[0026] exist Figure 1 In the diagram, the Z-axis represents the vertical direction. The X-axis represents a direction orthogonal to the Z-axis. The Y-axis represents a direction orthogonal to both the Z-axis and the X-axis. In the following description, the directions represented by the X, Y, and Z axes are sometimes referred to as the vertical direction Z, the first direction X, and the second direction Y. The view from the vertical direction Z is called a top view. The outer shell 2 is roughly rectangular in top view. The dimension of the outer shell 2 in the first direction X is larger than its dimension in the second direction Y.

[0027] like Figure 1 As shown, the substrate processing apparatus 1 includes a loading / unloading unit 10, a polishing unit 20, a cleaning unit 30, a substrate transport unit 40, and a control unit 50. The loading / unloading unit 10 is disposed at one end of the housing 2 in the first direction X. The polishing unit 20 and the cleaning unit 30 are disposed at both ends of the housing 2 in the second direction Y. The control unit 50 provides overall control over the operation of the loading / unloading unit 10, the polishing unit 20, the cleaning unit 30, and the substrate transport unit 40.

[0028] The control unit 50 includes a processor (CPU: Central Processing Unit) and memory. The memory stores various data and programs. The memory consists of volatile memory, non-volatile memory, flash memory, etc. The functions of the control unit 50 are implemented by the processor executing computer programs (software) stored in the memory. Part or all of the functions of the control unit 50 can also be implemented using hardware such as LSI (Large Scale Integration), ASIC (Application Specific Integrated Circuit), FPGA (Field-Programmable Gate Array), GPU (Graphics Processing Unit), etc. (including the circuitry), or can be implemented through a combination of software and hardware.

[0029] The loading / unloading unit 10 has multiple front loading units 11. Each front loading unit 11 is arranged along the end face (side) of the housing 2 in the second direction Y. The front loading unit 11 may be equipped with an open box, an SMIF (Standard Manufacturing Interface) carrier, or a FOUP (Front Opening Unified Pod). Among them, SMIF and FOUP are boxes that internally house the substrate W and are sealed containers covered by partitions, which can maintain an environment independent of the external space.

[0030] The loading / unloading unit 10 includes a transport robot 12 and a traveling mechanism 13. The transport robot 12 accesses and retrieves the substrate W from each of the front loading units 11. The traveling mechanism 13 extends along the second direction Y, causing the transport robot 12 to move in the second direction Y. Thus, the transport robot 12 can access multiple front loading units 11.

[0031] The polishing unit 20 includes a plurality of substrate polishing devices 21. The plurality of substrate polishing devices 21 are arranged along the long side direction (first direction X) of the substrate transport path 3. Figure 1 In the example shown, there are four substrate polishing apparatuses 21. These substrate polishing apparatuses 21 have the same structure as each other. Hereinafter, when it is necessary to distinguish the four substrate polishing apparatuses 21, they will be labeled with the symbols 21A, 21B, 21C, and 21D. If no distinction is needed, they will simply be referred to as "substrate polishing apparatus 21".

[0032] Furthermore, the number of substrate polishing devices 21 included in the polishing unit 20 is not limited to four and can be varied.

[0033] The substrate polishing apparatus 21 polishes and planarizes the substrate W. The substrate polishing apparatus 21 includes a polishing pad 22, a turntable 23, a top ring 24, a dressing device 25, and an atomizer 26. Furthermore, although not shown in the figure, the substrate polishing apparatus 21 also includes a polishing slurry supply nozzle for supplying polishing slurry (paste) and dressing fluid (e.g., pure water) to the polishing pad 22. The polishing pad 22 is a consumable and is detachable from the turntable 23. When the substrate processing apparatus 1 leaves the factory, the polishing pad 22 may not yet be installed on the turntable 23. Furthermore, during periods when the substrate polishing apparatus 21 is not performing polishing operations, such as during inspection, maintenance, or equipment handling, the polishing pad 22 may not be installed on the turntable 23.

[0034] The polishing pad 22 has a polishing surface for polishing the substrate W. In this embodiment, the upper surface of the polishing pad is used as the polishing surface. The polishing pad 22 is mounted on the upper end of the turntable 23. The turntable 23 rotates under the control of the control unit 50. As a result, the polishing pad 22 is also rotated. The top ring 24 holds the substrate W and presses the substrate W toward the polishing pad 22. The detailed structure of the top ring 24 will be described later.

[0035] While supplying polishing slurry to the polishing pad 22, the substrate polishing apparatus 21 presses the substrate W onto the polishing pad 22 via the top ring 24, and further moves the top ring 24 relative to the turntable 23. As a result, the substrate polishing apparatus 21 polishes the substrate W to make its surface flat.

[0036] The dresser 25 is used to dress the grinding surface of the grinding pad 22. The dresser 25 has a rotating part that contacts the grinding pad 22. Hard particles such as diamond particles and ceramic particles are fixed in the rotating part of the dresser 25. By rotating and oscillating the rotating part, the dresser 25 uniformly dresses the grinding surface of the grinding pad 22 to form a flat grinding surface.

[0037] Atomizer 26 will clean the fluid F (refer to...) Figure 6 The cleaning fluid F sprayed by the atomizer 26 is sprayed onto the grinding surface of the grinding pad 22. The cleaning fluid F sprayed by the atomizer 26 can be a mixture of liquid (e.g., pure water) and gas (e.g., nitrogen). Alternatively, the cleaning fluid F sprayed by the atomizer 26 can also be a mist-like fluid formed by atomizing a liquid (e.g., pure water). The atomizer 26 sprays these cleaning fluids onto the grinding surface of the grinding pad 22 under high pressure, thereby washing away residual grinding debris, abrasive particles, etc., on the grinding surface. This purifies the grinding surface and enables the dressing device 25 to perform a sharpening operation on the grinding surface, i.e., regeneration of the grinding surface.

[0038] Figure 1The substrate transport unit 40 shown transfers substrate W between the loading / unloading unit 10, the polishing unit 20, and the cleaning unit 30. The cleaning unit 30 cleans the substrate W after it has been polished by the substrate polishing apparatus 21. In addition, the cleaning unit 30 dries the cleaned substrate W.

[0039] Figure 2 This is a perspective view showing the schematic structure of the top ring 24. The top ring 24 includes: a shaft 24a, a top ring cover 24b, a lifting mechanism 24c, and a top ring head 24d. The operation of each part of the top ring 24 described below is controlled by the control unit 50. The shaft 24a has a central axis O extending in the vertical direction Z. The top ring cover 24b, the lifting mechanism 24c, and the top ring head 24d can swing about the central axis O. The shaft 24a itself can swing, or the shaft 24a can remain stationary while the top ring head 24d, etc., swing relative to the shaft 24a.

[0040] The top ring cover 24b houses a drive unit for driving the lifting mechanism 24c, a connecting part for connecting the shaft 24a to the lifting mechanism 24c, and the top ring head 24d. The lifting mechanism 24c moves up and down to change the position of the top ring head 24d in the vertical direction Z. The top ring head 24d can hold the substrate W. That is, the top ring 24 can hold the substrate W via the top ring head 24d and cause the substrate W to swing around the central axis O, or to move the substrate W in the vertical direction Z.

[0041] Figure 9 This is a diagram illustrating the topics covered in previous structures. Furthermore, Figure 9 This figure is not related to the substrate processing apparatus 1 of this embodiment. However, the substrate processing apparatus 1 of this embodiment is the same as conventional in that the atomizer 26 sprays the cleaning fluid F to the polishing pad 22, so the same reference numerals are used for ease of explanation. Figure 9 The substrate W is in standby mode and positioned at the junction when it is transferred from the top ring 24 to the substrate conveying section 40. When the substrate W is in the junction position, if the polishing pad 22 rotates, the cleaning fluid F sprayed from the atomizer 26 and adhering to the polishing pad 22 may be scattered due to centrifugal force. In addition to the cleaning fluid F, slurry and the like may also be scattered due to centrifugal force. If these scattered particles adhere to the substrate W in standby mode, they may adversely affect the processing of the substrate W.

[0042] To solve the above-mentioned problems, the substrate processing apparatus 1 of this embodiment is as follows: Figure 2 , Figure 3 As shown, it has a swing cover 60, etc. Figure 3 for Figure 2 View in direction III. For example... Figure 2 and Figure 3As shown, the swing cover 60 is mounted on the top ring 24. The swing cover 60 has a first surface 60a facing the top ring head 24d and a second surface 60b on the opposite side thereto.

[0043] Figure 4 , Figure 5 This is a top view showing the periphery of the substrate polishing apparatus 21. Figure 4 This shows the top ring head 24d in the grinding position. Figure 5 This shows the top ring head 24d in the junction position. The top ring 24d oscillates around the central axis O, thus positioning the top ring head 24d in the grinding position ( Figure 4 ) and handover location ( Figure 5 The substrate W, held by the top ring head 24d, is pressed against the polishing pad 22 for polishing. In the polishing position, viewed from above, the top ring head 24d and the substrate W overlap with the polishing pad 22. The "transfer position" refers to the position where the substrate W transfers from the top ring head 24d to the substrate transport section 40. In the transfer position, viewed from above, the top ring head 24d and the substrate W do not overlap with the polishing pad 22 and are separated from it. When in the transfer position (… Figure 5 When the swing cover 60 is in motion, the second side 60b of the swing cover 60 faces the grinding pad 22.

[0044] like Figure 4 , Figure 5 As shown, a fixed cover 70 and a cover cleaning nozzle 80 are disposed near the top ring 24. In this embodiment, there are two cover cleaning nozzles 80, which are sometimes referred to as the first cover cleaning nozzle 81 and the second cover cleaning nozzle 82, respectively. However, the number of cover cleaning nozzles 80 can be varied. Alternatively, there may be no cover cleaning nozzles 80.

[0045] exist Figure 3 In the example, viewed from above, the swing cover 60 is bent and has a first part 61 and a second part 62. The first part 61 is straight in view from above, and its two ends are fixed to the lower surface of the top ring cover 24b by screws 63 and 64. The second part 62 is straight in view from above. A portion of the second part 62 protrudes outward from the top ring cover 24b in view from above.

[0046] like Figure 5 As shown, when the top ring head 24d is in the junction position, the swing shield 60 is located between the top ring head 24d and the polishing pad 22. Therefore, even if liquids such as slurry are scattered from the polishing pad 22 due to centrifugal force, the scattering material can be prevented from adhering to the substrate W by the swing shield 60 and the fixed shield 70. Furthermore, since the swing shield 60 is bent, a portion of the swing shield 60 (in) Figure 3In the example, the second part 62) is close to the top ring head 24d. The smaller the distance between the swing shield 60 and the top ring head 24d, the better it can suppress the adhesion of debris to the substrate W held by the top ring head 24d. In addition, since the swing shield 60 is bent and a part of the swing shield 60 protrudes outward from the top ring shield 24b when viewed from above, it can shield the space between the polishing pad 22 and the substrate W over a wider range.

[0047] In addition, when the top ring head 24d is in the junction position ( Figure 5 When the oscillating hood 60 is oscillating, the first hood cleaning nozzle 81 and the second hood cleaning nozzle 82 spray hood cleaning fluid Lc. The hood cleaning fluid Lc is a liquid used for cleaning the oscillating hood 60, such as pure water. The first hood cleaning nozzle 81 is positioned to clean the first surface 60a of the oscillating hood 60. The second hood cleaning nozzle 82 is positioned to clean the second surface 60b of the oscillating hood 60. Because the oscillating hood 60 is bent, the hood cleaning fluid Lc sprayed from the second hood cleaning nozzle 82 is prevented from rebounding after impacting the second surface 60b, and the hood cleaning fluid Lc flows along the second surface 60b, enabling cleaning a wide area of ​​the second surface 60b. By suppressing the rebound of the hood cleaning fluid Lc, it is possible to prevent the hood cleaning fluid Lc from adhering to the abrasive pad 22.

[0048] Figure 6 It is shown Figure 5 A three-dimensional view of the vicinity of the swing shield 60 in the middle. Figure 7 This is a schematic diagram illustrating the positional relationship between the swing shield 60 and the fixed shield 70. Figure 7 In the middle, solid lines indicate the locations at the intersection ( Figure 5 The position of the swing cover 60 at the time of grinding is indicated by a dashed line. Figure 4 The position of the swing shield 60 when it is in motion.

[0049] like Figure 6 As shown, the swing cover 60 and the fixed cover 70 are positioned differently in the vertical direction Z. Therefore, in Figure 5 In the top view shown, even if the swing cover 60 and the fixed cover 70 overlap, the swing cover 60 and the fixed cover 70 will not actually interfere with each other. In other words, when the top ring 24 swings around the central axis O, the swing cover 60 and the fixed cover 70 will not collide.

[0050] In addition, such as Figure 7 As shown, when in the junction position (solid line), the swing shield 60 and the fixed shield 70 function as a shield to cover the space between the polishing pad 22 and the substrate W. Therefore, it is possible to more reliably prevent debris from the polishing pad 22 from reaching the substrate W. However, even without the fixed shield 70, a certain degree of debris prevention can be achieved with the swing shield 60. Therefore, providing the fixed shield 70 is not necessary.

[0051] Figure 8 It shows Figure 3 Examples of variations in the shape of the swing shield 60. For example... Figure 8 As shown, the swing shield 60 can be bent when viewed from above. In this case, the same effect as when the swing shield 60 is bent can be obtained.

[0052] Next, an example of a substrate processing method using the substrate processing apparatus 1 configured as described above will be described. The substrate processing method includes, for example, a polishing process, a moving process, a releasing process, a pad cleaning process, a top ring cleaning process, a holding process, and a cover cleaning process.

[0053] In the polishing process, the substrate W is polished using the polishing pad 22. Specifically, while holding the substrate W with the top ring head 24d, the top ring head 24d is positioned at the polishing position. Figure 4 Furthermore, while the turntable 23 is rotating, the top ring head 24d is lowered by the lifting mechanism 24c, and the substrate W is pressed against the polishing pad 22 with a specified pressure. At this time, slurry or the like is supplied to the polishing pad 22.

[0054] After the grinding process is completed, a moving process is performed. During the moving process, the ground substrate W is held, and the top ring head 24d is swung from the grinding position to the junction position. Figure 5 This causes the polished substrate W to move from the polishing position to the junction position. At this time, the lifting mechanism 24c moves the top ring head 24d upward, causing the substrate W to detach from the polishing pad 22.

[0055] After the moving process, a release process is performed. In the release process, the substrate W is released from the top ring head 24d. For example, in... Figure 7 In this example, the substrate W is transferred to the transfer section 41, which is located below the top ring head 24d. While the substrate W is held by the transfer section 41, cleaning and drying of the substrate W can be performed. The substrate W, after cleaning and drying, is moved from the transfer section 41 by the substrate transport section 40. Furthermore, a new substrate W is placed in the transfer section 41 in preparation for the next grinding process.

[0056] After the moving process, a pad cleaning process is performed. The pad cleaning process can also be performed simultaneously with the release process. In the pad cleaning process, cleaning fluid F is supplied from the atomizer 26 to the polishing pad 22 to clean the polishing pad 22. Alternatively, the polishing pad 22 can be trimmed by the trimmer 25 before or simultaneously with the pad cleaning process.

[0057] Following the release process, a top ring cleaning process is performed. In this process, the top ring head 24d is cleaned. This removes any slurry or other material that adhered to the top ring head 24d during the grinding process.

[0058] After the top ring cleaning process, a holding process is performed. In the holding process, a substrate W different from the substrate W released in the release process is held by the top ring head 24d. Specifically, the top ring head 24d descends toward the new substrate W disposed at the junction 41 and holds the substrate W. After the holding process, the top ring head 24d swings from the junction position to the grinding position, and the grinding process and subsequent processes are repeated.

[0059] In the hood cleaning process, hood cleaning fluid Lc is sprayed from the hood cleaning nozzle 80 to clean the oscillating hood 60. Figure 5 In the example, the first surface 60a of the swing cover 60 is cleaned by the first cover cleaning nozzle 81, and the second surface 60b of the swing cover 60 is cleaned by the second cover cleaning nozzle 82.

[0060] Here, it is preferable to perform the cover cleaning process during the period from the start of the release process to the completion of the holding process. That is, it is preferable to perform the cover cleaning process simultaneously with at least one of the release process, the top ring cleaning process, the pad cleaning process, and the holding process. This ensures that there is no period in the series of processes where only the cover cleaning process is performed. Therefore, it is possible to prevent a decrease in the number of substrates W processed per unit time (WPH: wafers per hour). However, it is also possible to omit the cover cleaning process in the series of processes, and instead perform the cover cleaning process, for example, when the substrate processing apparatus 1 is in a resting state.

[0061] As described above, the substrate processing apparatus 1 of this embodiment includes: a top ring 24 having a top ring head 24d for holding the substrate W and swinging; a swing cover 60 fixed to the top ring 24; a turntable 23 capable of mounting a polishing pad 22 and rotating the polishing pad 22; and an atomizer 26 supplying cleaning fluid F to the polishing pad 22. When the top ring head 24d is located at the junction position of the substrate W ( Figure 5 When the top ring head 24d is located at the polishing position where the substrate W is polished by the polishing pad 22, the swing cover 60 is positioned between the substrate W and the polishing pad 22. Figure 4 When viewed from above, the swing cover 60 does not overlap with the grinding pad 22.

[0062] According to this substrate processing apparatus 1, the following effects can be obtained. When the top ring head 24d is in the junction position ( Figure 5 When the top ring head 24d is in the polishing position, the oscillating cover 60 is located between the substrate W and the polishing pad 22. Therefore, the oscillating cover 60 can prevent slurry, cleaning fluid F, etc., that are scattered from the rotating polishing pad 22 due to centrifugal force from adhering to the substrate W. Furthermore, when the top ring head 24d is in the polishing position (…), Figure 4When viewed from above, the oscillating cover 60 does not overlap with the polishing pad 22. Therefore, it is possible to prevent slurry or other materials that have scattered from the polishing pad 22 and adhered to the oscillating cover 60 from dripping from the oscillating cover 60 and adversely affecting the polishing process. Furthermore, since the oscillating cover 60 oscillates together with the top ring 24, there is no need for power or control solely for driving the oscillating cover 60. This reduces the cost of the substrate processing apparatus 1 and prevents a decrease in WPH (waste pressure).

[0063] Alternatively, the substrate processing apparatus 1 may include a fixing cover 70, which, when viewed from above, is fixed at a position between the substrate W and the polishing pad 22. The fixing cover 70 and the swing cover 60 are positioned differently in the vertical direction Z. With this structure, the swing cover 60 and the fixing cover 70 can function as a shield, thereby more reliably suppressing debris from the polishing pad 22 from reaching the substrate W.

[0064] Alternatively, the swing shield 60 can be bent or flexed when viewed from above. This structure allows the swing shield 60 to be positioned closer to the substrate W. Therefore, it is possible to more reliably suppress debris from the polishing pad 22 from reaching the substrate W. Furthermore, it is easier to clean the entire swing shield 60 through the shield cleaning nozzle 80. Additionally, it is possible to suppress the rebound of the shield cleaning fluid Lc from the swing shield 60 towards the polishing pad 22.

[0065] Alternatively, the substrate processing apparatus 1 may include at least one cover cleaning nozzle 80, which sprays cover cleaning fluid Lc onto the oscillating cover 60. With this configuration, it is possible to clean any loose material adhering to the oscillating cover 60.

[0066] Alternatively, the substrate processing apparatus 1 may include a first cover cleaning nozzle 81 and a second cover cleaning nozzle 82. The first cover cleaning nozzle 81 sprays cover cleaning fluid Lc onto the first surface 60a of the swing cover 60 facing the top ring head 24d. The second cover cleaning nozzle 82 sprays cover cleaning fluid Lc onto the second surface 60b of the swing cover 60, which is opposite to the first surface 60a. With this structure, both surfaces of the swing cover 60 can be cleaned.

[0067] The substrate processing method according to this embodiment includes a polishing process, a moving process, a releasing process, a top ring cleaning process, a pad cleaning process, a holding process, and a cover cleaning process. In the polishing process, the substrate W is pressed against the polishing pad 22 while the turntable 23 is rotated. In the moving process, after the polishing process, the substrate W held by the top ring head 24d is moved by swinging the top ring head 24d from the polishing position to the handover position. In the releasing process, after the moving process, the substrate W is released from the top ring head 24d at the handover position. In the top ring cleaning process, after the releasing process, the top ring head 24d is cleaned.

[0068] In the pad cleaning process, cleaning fluid F is supplied from the atomizer 26 to the polishing pad 22, thereby cleaning the polishing pad 22. In the holding process, after the release process, the new substrate W before polishing is held by the top ring head 24d. In the cover cleaning process, cover cleaning fluid Lc is sprayed from the cover cleaning nozzle 80, thereby cleaning the swing cover 60. Furthermore, the cover cleaning process is performed simultaneously with at least one of the release process, the top ring cleaning process, the pad cleaning process, and the holding process. According to this method, the period during which only the cover cleaning process is performed can be eliminated, thereby preventing a decrease in WPH.

[0069] Furthermore, the technical scope of the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

[0070] For example, the shroud cleaning nozzles 80 (first shroud cleaning nozzle 81 and second shroud cleaning nozzle 82) of the above embodiment are configured to clean both sides of the swing shroud 60, but they may also be configured to clean only one side. Alternatively, the substrate processing apparatus 1 may not include the shroud cleaning nozzles 80. Furthermore, the swing shroud 60 of the above embodiment is bent or folded, but the swing shroud 60 may also be straight when viewed from above.

[0071] Furthermore, the substrate processing method described in the above embodiments is only one example, and the order of the processes can be changed, or processes can be added or omitted.

[0072] Furthermore, without departing from the spirit of the present invention, the constituent elements in the above embodiments can be appropriately replaced with known constituent elements, and the above embodiments and variations can also be appropriately combined.

Claims

1. A substrate processing apparatus, characterized in that, have: A top ring having a top ring head that holds the substrate and is oscillating; A swing cover, which is fixed to the top ring; A turntable capable of mounting and rotating a polishing pad; as well as An atomizer that supplies cleaning fluid to the abrasive pad. When the top ring head is located at the junction of the substrate and the polishing pad, the swing cover is located between the substrate and the polishing pad. When the top ring head is located at the grinding position where the substrate is being ground by the grinding pad, the swing cover does not overlap with the grinding pad when viewed from above.

2. The substrate processing apparatus according to claim 1, characterized in that, It also includes a fixing cover, which, when viewed from above, fixes the substrate at a position between the substrate and the polishing pad. The fixed cover and the swing cover are positioned differently in the vertical direction.

3. The substrate processing apparatus according to claim 1, characterized in that, Viewed from above, the swing shield appears bent or flexed.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, It also includes at least one hood cleaning nozzle that sprays hood cleaning fluid onto the oscillating hood.

5. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that, It also features a first-cover cleaning nozzle and a second-cover cleaning nozzle. The first hood cleaning nozzle sprays hood cleaning fluid onto the first surface of the swing hood facing the top ring head. The second hood cleaning nozzle sprays hood cleaning fluid onto the second side of the swing hood, which is opposite to the first side.

6. A substrate processing method, using the substrate processing apparatus of claim 4, characterized in that, include: In the grinding process, the substrate is pressed onto the grinding pad while the turntable is rotating; In the moving process, after the grinding process, the substrate held by the top ring head is moved by swinging the top ring head from the grinding position to the junction position; In the release process, after the moving process, the substrate is released from the top ring head at the junction position; The top ring cleaning process involves cleaning the top ring head after the release process. The pad cleaning process involves supplying cleaning fluid from the atomizer to the abrasive pad to clean the abrasive pad. The holding process involves holding a substrate different from the substrate by means of the top ring head after the top ring cleaning process; as well as The hood cleaning process involves spraying hood cleaning fluid from the hood cleaning nozzle to clean the oscillating hood. The cover cleaning process is performed simultaneously with at least one of the following: the release process, the top ring cleaning process, the pad cleaning process, and the retention process.

Citation Information

Patent Citations

  • Cover assembly, cleaning method, and method for manufacturing cover assembly

    JP2024131363A

  • Liquid supply type screw compressor

    JP2025029344A