A multilayer diamond silicon carbide composite material, a preparation method and application thereof

Abstract

The present application belongs to the technical field of inorganic composite materials, and particularly relates to a multilayer diamond silicon carbide composite material and a preparation method and application thereof. The composite material is prepared by a pressureless liquid phase infiltration method from three layers of preforms and external silicon infiltration raw materials; the three layers of preforms comprise a lower layer, an intermediate transition layer and a surface layer connected in sequence, and the surface layer is arranged close to a chip. The present application realizes the gradient performance matching of the surface layer with high thermal conductivity and high hardness, the transition layer with connection and the lower layer with high strength and high toughness through the synergistic design of a preform hole mold, three-level particle size grading of each layer of diamond and gradient content.