Heat dissipation device and electronic device
Patent Information
- Application Number
- CN202510229044.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-27
- Publication Date
- 2026-08-28
AI Technical Summary
若散热不佳，则会导致电子设备温度过高，影响电子设备运行的稳定性和可靠性，甚至可能烧毁电路板
Smart Images
Figure CN122649992A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of circuit technology, and more specifically, to heat dissipation devices and electronic devices. Background Technology
[0002] As the power of electronic components continues to increase, the performance of electronic devices has improved significantly. However, this has also made heat dissipation a more prominent issue. Poor heat dissipation can lead to overheating, affecting the stability and reliability of electronic devices and potentially even burning out circuit boards. To address this, heat dissipation devices utilizing piezoelectric resonant jet technology can be introduced. However, these devices are limited by their operating principles and overall structural design, resulting in relatively limited heat dissipation efficiency. Therefore, further improving the heat dissipation capacity of these devices is a pressing issue that needs to be addressed. Summary of the Invention
[0003] This application provides a heat dissipation device and an electronic device, which helps to further improve the heat dissipation capacity of the heat dissipation device.
[0004] In a first aspect, a heat dissipation device is provided, comprising: a first piezoelectric layer including a first gap; an orifice plate covering the first piezoelectric layer, the openings of the orifice plate being opposite to the first gap; a gasket ring layer located on the side of the orifice plate away from the first piezoelectric layer; a diaphragm layer located on the side of the gasket ring layer away from the first piezoelectric layer, wherein the orifice plate, the gasket ring layer, and the diaphragm layer form a cavity; and a second piezoelectric layer located on the side of the diaphragm layer away from the first piezoelectric layer.
[0005] In conjunction with the first aspect, in some implementations of the first aspect, the first piezoelectric layer vibrates based on a first electric field, and the second piezoelectric layer vibrates based on a second electric field, wherein the electric field directions of the first electric field and the second electric field are opposite.
[0006] In conjunction with the first aspect, in some implementations of the first aspect, a first substrate layer comprising a rigid material is disposed between the diaphragm layer and the second piezoelectric layer, and / or, a second substrate layer comprising a rigid material is disposed between the perforated plate and the first piezoelectric layer.
[0007] In conjunction with the first aspect, in some implementations of the first aspect, the aforementioned heat dissipation device is a long strip structure.
[0008] In conjunction with the first aspect, in some implementations of the first aspect, the number of openings in the above-mentioned perforated plate is one or more.
[0009] In conjunction with the first aspect, in some implementations of the first aspect, the first piezoelectric layer includes a first piezoelectric substrate and a second piezoelectric substrate, with a first gap between the first piezoelectric substrate and the second piezoelectric substrate; the second piezoelectric layer includes a third piezoelectric substrate, with the third piezoelectric substrate and the cavity located at the geometric center of the heat dissipation device.
[0010] In conjunction with the first aspect, in some implementations of the first aspect, the aforementioned first gap is opposite to the heat dissipation target.
[0011] In conjunction with the first aspect, in some implementations of the first aspect, the heat dissipation device further includes: a partition located at a target position within the cavity, the target position corresponding to the equilibrium position of the diaphragm layer during resonant motion.
[0012] In conjunction with the first aspect, in some implementations of the first aspect, the heat dissipation device further includes: a plurality of first protrusions and a plurality of second protrusions, wherein the first protrusions penetrate the diaphragm layer and are embedded in the gasket ring layer, and the angle between the first protrusions and the diaphragm layer is within the target angle range; the second protrusions penetrate the perforated plate and are embedded in the gasket ring layer, and the angle between the second protrusions and the perforated plate is within the target angle range.
[0013] In conjunction with the first aspect, in some implementations of the first aspect, the aforementioned target angle range includes the interval [70°, 75°].
[0014] In a second aspect, a heat dissipation device is provided, comprising: an orifice plate including an opening opposite to a heat dissipation target; a gasket ring located on a first surface of the orifice plate; a diaphragm layer located on the side of the gasket ring away from the orifice plate, wherein the orifice plate, the gasket ring, and the diaphragm layer form a cavity; a partition located at a target position within the cavity, the target position corresponding to the equilibrium position of the diaphragm layer during resonant motion; and a piezoelectric layer located on the side of the diaphragm layer away from the orifice plate.
[0015] In conjunction with the second aspect, in some implementations of the second aspect, the number of the aforementioned target positions is N, the number of intervals is M, N and M are positive integers, and M is less than or equal to N.
[0016] In conjunction with the second aspect, in some implementations of the second aspect, the height of the aforementioned partition is less than or equal to the height of the cavity.
[0017] In conjunction with the second aspect, in some implementations of the second aspect, the heat dissipation device further includes: a plurality of bosses that penetrate the diaphragm layer and are embedded in the gasket ring layer, wherein the angle between the bosses and the diaphragm layer is within the target angle range.
[0018] In conjunction with the second aspect, in some implementations of the second aspect, the aforementioned target angle range includes the interval [70°, 75°].
[0019] Thirdly, an electronic device is provided, including a heat dissipation target and a heat dissipation device in any possible implementation of the heat dissipation device design as described in the first or second aspect above. Attached Figure Description
[0020] Figure 1 This is a schematic diagram of the structure of a heat dissipation device 100 according to an embodiment of this application;
[0021] Figure 2 This is a schematic diagram showing the positional relationship between the heat dissipation device 100 and the heat dissipation target 201 as proposed in the embodiments of this application;
[0022] Figure 3 This is a simulation experiment result diagram of the heat dissipation effect of the heat dissipation device 100 proposed in the embodiments of this application;
[0023] Figure 4 This is a schematic diagram of the structure of another heat dissipation device 100 proposed in the embodiments of this application;
[0024] Figure 5 This is a schematic diagram of the structure of another heat dissipation device 100 proposed in the embodiments of this application;
[0025] Figure 6 It is a graphical representation of a spherical cap model;
[0026] Figure 7 This is a schematic diagram of the gas flow inside the cavity of the heat dissipation device proposed in the embodiments of this application under high-frequency resonance;
[0027] Figure 8 This is a schematic diagram of the structure of a heat dissipation device 200 according to an embodiment of this application;
[0028] Figure 9 This is a schematic diagram of the structure of another heat dissipation device 100 proposed in the embodiments of this application;
[0029] Figure 10 This is a schematic diagram of the structure of a heat dissipation device 300 according to an embodiment of this application;
[0030] Figure 11 This is a schematic diagram of the structure of another heat dissipation device 100 proposed in the embodiments of this application;
[0031] Figure 12 This is a schematic diagram of another heat dissipation device 200 proposed in the embodiments of this application. Detailed Implementation
[0032] The technical solutions in this application will now be described with reference to the accompanying drawings.
[0033] This application will present various aspects, embodiments, or features relating to a system comprising multiple devices, components, modules, etc. It should be understood and appreciated that individual systems may include additional devices, components, modules, etc., and / or may not include all the devices, components, modules, etc. discussed in conjunction with the accompanying drawings. Furthermore, combinations of these approaches are also possible.
[0034] Furthermore, in the embodiments of this application, the words "exemplary," "for example," etc., are used to indicate that they are examples, illustrations, or descriptions. Any embodiment or design scheme described as "exemplary" in the embodiments of this application should not be construed as being better or more advantageous than other embodiments or design schemes. Specifically, the use of the term "exemplary" is intended to present the concept in a concrete manner.
[0035] The business scenarios described in the embodiments of this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided in the embodiments of this application. As those skilled in the art will know, with the evolution of technology and the emergence of new business scenarios, the technical solutions provided in the embodiments of this application are also applicable to similar technical problems.
[0036] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.
[0037] In this application embodiment, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.
[0038] In the description of the embodiments of this application, the terms "upper," "lower," "left," "right," "inner," "outer," "vertical," and "horizontal," etc., indicate the orientation or positional relationship relative to the orientation or position of the components shown in the accompanying drawings. It should be understood that these directional terms are relative concepts, used for relative description and clarification, and not to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. They can change accordingly depending on the orientation of the components in the accompanying drawings, and therefore should not be construed as limiting this application.
[0039] In the embodiments of this application, the same reference numerals are used to denote the same component or part. For the same part in the embodiments of this application, only one part or component may be labeled with reference numerals in the figures. It should be understood that the reference numerals also apply to other identical parts or components. In addition, the various parts in the figures are not drawn to scale, and the dimensions and sizes of the parts shown in the figures are only exemplary and should not be construed as limiting this application.
[0040] As the power of electronic components continues to increase, the performance of electronic devices has improved significantly. However, this has also made heat dissipation a more prominent issue. During operation, excessively high temperatures can negatively impact the performance of electronic components, such as reducing the lifespan of capacitors and resistors, degrading the performance of transformers and insulation materials, and causing transistor failure. Furthermore, excessively high temperatures can lead to damage to electronic devices, thermal aging of materials, cracking of low-melting-point welds, solder joint detachment, and reduced mechanical strength, directly affecting product quality. Therefore, effective heat dissipation management is crucial for ensuring stable operation of electronic devices, extending their lifespan, and improving product quality.
[0041] Based on this, a heat exchange scheme based on natural convection has been proposed in this field. However, the heat exchange efficiency of this scheme is very low, and the amount of heat that can be removed from the inside of electronic devices through natural convection is very limited. To address this, a solution using heat dissipation devices to cool electronic devices has been proposed to solve the problem of excessively high operating temperatures. For example, fans are used as heat dissipation devices. However, conventional fans are large in size, noisy, and cannot be integrated into ultra-thin products. Therefore, a thin and quiet heat dissipation device is needed.
[0042] In response, a heat dissipation device utilizing piezoelectric resonant jet technology (also known as synthetic jet technology) has been proposed in this field. This device includes an excitation cavity covered by a diaphragm, with an orifice within the cavity. The basic principle of this technology is that the diaphragm vibrates as a whole (or undergoes simple harmonic motion or resonant motion) based on external excitation, causing a periodic change in the direction of airflow within the excitation cavity. Therefore, by periodically blowing and drawing fluid into and out of the excitation cavity, a series of ordered airflow vortex rings or vortex pairs are induced and generated outside the orifice. During the formation stage of the vortex rings or vortex pairs and their subsequent downstream convection migration, the surrounding fluid is continuously entrained and mixed using the fluid's inductive effect, forming a high-speed jet. This jet not only possesses high momentum, effectively carrying away heat, but also introduces surrounding air through the entrainment effect, forming a secondary flow that further enhances the heat dissipation effect. Furthermore, it allows for precise control and manipulation of the flow field.
[0043] When the diaphragm vibrates, the air in the excitation cavity conforms to the ideal gas equation, as shown in the following equation (1):
[0044] pV = nRT (1)
[0045] Where p represents the gas pressure, V represents the gas volume, n represents the amount of substance of the gas (usually in moles), R is a constant called the ideal gas constant, the value of R depends on the type of gas and the unit used, and T represents the thermodynamic temperature of the gas (usually in Kelvin).
[0046] Furthermore, assuming the temperature remains constant, the air pressure and air volume within the excitation chamber satisfy the following formula (2):
[0047] p0V0=p1V1=p1(V0+ΔV) (2)
[0048] Where p0V0=p1V1 is the expression of Boyle's Law, p0 represents the initial pressure of the gas, that is, the pressure state of the gas before the change of gas state; V0 represents the initial volume of the gas, that is, the size of the space occupied by the gas before the change of gas state; p1 represents the pressure of the gas after the change of state (e.g., gas compression or expansion caused by diaphragm resonance motion); V1 represents the volume occupied by the gas when the pressure becomes p1; ΔV=V1-V0 is used for the increase or decrease of the gas volume from the initial state to the final state.
[0049] Combining formulas (1) and (2) above, it can be seen that the internal air pressure and airflow of the heat dissipation device are related to the deformation of the diaphragm. Therefore, the deformation generated by the overall resonant motion of the diaphragm enables the air inside the heat dissipation device to flow. This airflow passes over the heat dissipation target, carrying the heat emitted by the target and dissipating it from the electronic device. Furthermore, heat dissipation devices based on synthetic jet technology do not require rotating parts such as fans, thus possessing advantages such as compact structure, low noise, and low energy consumption.
[0050] However, the heat dissipation efficiency of the aforementioned heat dissipation devices based on synthetic jet technology is still relatively limited due to the device's structural design. Therefore, the heat dissipation device and electronic device proposed in this application embodiment help to further improve the heat dissipation capability of heat dissipation devices based on piezoelectric resonant jet technology.
[0051] Figure 1 This is a schematic diagram of the structure of a heat dissipation device 100 according to an embodiment of this application. Wherein, Figure 1 (a) in the figure is a top view of the heat dissipation device 100. Figure 1 (b) is a cross-sectional view of the heat dissipation device 100, and section AA is in... Figure 1 (a) in the text is marked.
[0052] refer to Figure 1 As shown, the heat dissipation device 100 includes:
[0053] A first piezoelectric layer 110, the first piezoelectric layer 110 includes a first gap 111;
[0054] A perforated plate 120 covers a first piezoelectric layer 110, and the openings 121 of the perforated plate 120 are opposite to the first gap 111.
[0055] Gasket ring 130, the gasket ring 130 is located on the side of the orifice plate 120 away from the first piezoelectric layer 110;
[0056] The diaphragm layer 140 is located on the side of the gasket ring layer 130 away from the first piezoelectric layer 110. The perforated plate 120, the gasket ring layer 130 and the diaphragm layer 140 form a cavity 105.
[0057] The second piezoelectric layer 150 is located on the side of the diaphragm layer 140 away from the first piezoelectric layer 110.
[0058] In some possible embodiments, the first piezoelectric layer 110 and the second piezoelectric layer 150 include piezoelectric materials, which may include piezoelectric ceramic transducer (PZT), barium titanate (BT), aluminum nitride (AlN), or other materials that can achieve the same piezoelectric effect.
[0059] In some possible embodiments, the perforated plate 120 and the diaphragm layer 140 may include flexible materials such as polyethylene terephthalate (PET) and polyimide (PI), or alloy materials such as stainless steel.
[0060] In some possible embodiments, the gasket ring 130 may include materials such as stainless steel, alloy steel, or ceramic.
[0061] In some possible embodiments, the thickness range of the first piezoelectric layer 110, the perforated plate 120, the gasket ring layer 130, the diaphragm layer 140, and the second piezoelectric layer 150 can be within the range of [20 μm, 500 μm].
[0062] In some possible embodiments, the heat dissipation device 100 can be a long strip structure; of course, when the heat dissipation device 100 is applied to electronic devices with different structural designs, the overall appearance of the heat dissipation device 100 can also be adapted to adjust, for example, by changing it to a disc-shaped structure.
[0063] In some possible embodiments, the first gap 111 and the opening 121 are located at the geometric center of the heat dissipation device 100.
[0064] In some possible embodiments, the opening 121 described above can be a structure in the form of an orifice or a slit.
[0065] Figure 2 This is a schematic diagram showing the positional relationship between the heat dissipation device 100 and the heat dissipation target 201 as proposed in the embodiments of this application.
[0066] refer to Figure 2 As shown, the first gap 111 in the heat dissipation device 100 is opposite to the heat dissipation target 201.
[0067] The heat dissipation target 201 can be a chip in an electronic device, a circuit in an electronic device, another heat-generating device in an electronic device, or a heat-conducting device such as a heat spreader connected to a chip, circuit, or other heat-generating device in an electronic device.
[0068] It should be noted that the operating principle of the heat dissipation device 100 is mainly based on the inverse piezoelectric effect originating from the first piezoelectric layer 110 and the second piezoelectric layer 150. The inverse piezoelectric effect refers to the phenomenon that a piezoelectric material undergoes mechanical deformation when subjected to an external electric field. In the heat dissipation device 100, the first piezoelectric layer 110 and the second piezoelectric layer 150 can respond to an alternating electric field of a specific frequency. When the alternating electric field acts on the first piezoelectric layer 110 and the second piezoelectric layer 150, the positive and negative charge centers inside the piezoelectric material in the first piezoelectric layer 110 and the second piezoelectric layer 150 will undergo relative displacement, causing the piezoelectric material to deform as a whole. This deformation manifests as the bending deformation of the first piezoelectric layer 110 and the second piezoelectric layer 150. Since the second piezoelectric layer 150 is tightly connected to the diaphragm layer 140, the deformation of the second piezoelectric layer 150 is transmitted to the diaphragm layer 140. Because the diaphragm layer 140 has good deformation capability, when the second piezoelectric layer 150 deforms, it pushes or pulls the diaphragm layer 140, causing the diaphragm layer 140 to vibrate. The vibration of the diaphragm layer 140 causes turbulence in the air inside the cavity 105, thereby forming an airflow that flows out from the opening 121. This airflow can effectively remove heat from the surrounding environment of the heat dissipation device 100, achieving a heat dissipation effect.
[0069] Furthermore, the aforementioned heat dissipation device 100 also considers the low airflow velocity and slow flow at the edge of the cavity 105. Especially when the heat dissipation device 100 has a long strip structure, the long strip diaphragm layer 140 will exhibit multiple resonant waveforms along its length, while only one resonant waveform may exist along its width. This asymmetry in the spatial distribution of resonant waveforms will affect the resonance effect of the diaphragm layer 140, causing some air on both sides of the cavity 105 along its length to stagnate relative to the air at the middle position corresponding to the opening 121, thus hindering the heat dissipation of the heat dissipation device 100. Therefore, the heat dissipation device 100 introduces a first piezoelectric layer 110, which not only serves as the part of the entire heat dissipation device 100 that interfaces with the heat dissipation target 201, but also cooperates with the second piezoelectric layer 150 to promote airflow in the cavity 105. Since the first piezoelectric layer 110 is closely connected to the perforated plate 120, the deformation of the first piezoelectric layer 110 will be transmitted to the perforated plate 120. Since the material of the perforated plate 120 is the same as or similar to the material of the diaphragm layer 140, it has good deformation capability. Therefore, when the first piezoelectric layer 110 deforms, the first piezoelectric layer 110 will push or pull the perforated plate 120, causing the perforated plate 120 to vibrate. The vibration of the perforated plate 120 can cause further disturbance of the air in the cavity 105, thereby promoting airflow and enhancing the heat dissipation effect.
[0070] Figure 3 This is a simulation experiment result diagram of the heat dissipation effect of the heat dissipation device 100 proposed in the embodiments of this application.
[0071] This simulation experiment simulates the heat dissipation effect of two heat dissipation devices. One simulation experiment simulates the heat dissipation effect of a heat dissipation device in existing technology. Detailed simulation results can be found in [link to simulation results]. Figure 3 In (a) of the prior art, the gas in the cavity of the heat dissipation device flows only based on the vibration of the diaphragm layer; another simulation experiment simulates the heat dissipation effect of the heat dissipation device 100 proposed in the embodiments of this application, and the simulation results are detailed in […]. Figure 3 (b) in the middle.
[0072] refer to Figure 3 As shown, the experimental results can be represented by a coordinate graph. The horizontal axis of the graph indicates the location where the cavity deforms, and the vertical axis indicates the amount of deformation of the cavity. Therefore, the experimental result curve in the coordinate graph represents the displacement of the cavity along the height direction at various positions when the heat dissipation device is running and at the single-wave resonant characteristic frequency.
[0073] contrast Figure 3 (a) and Figure 3 The experimental results in (b) show that the amplitude of the cavity deformation of the heat dissipation device in the prior art is on the order of 10 during operation. -13 mm, while the heat dissipation device 100 proposed in this application has a cavity deformation amplitude on the order of 10 during operation. -12 mm, it can be seen that the heat dissipation effect of the heat dissipation device 100 proposed in this application embodiment is significantly stronger than that of heat dissipation devices in the prior art.
[0074] Based on the above technical solution, the heat dissipation device 100 includes two piezoelectric layers, and the two piezoelectric layers are located on the upper and lower sides of the cavity along the height direction. Based on the structure of the double piezoelectric layers, stronger air disturbance can be caused in the cavity 105, promoting airflow and thus further increasing the heat dissipation effect of the heat dissipation device 100.
[0075] In some possible embodiments, the first piezoelectric layer 110 vibrates based on a first electric field, and the second piezoelectric layer 150 vibrates based on a second electric field, wherein the electric field directions of the first electric field and the second electric field are opposite.
[0076] For example, when the first electric field is positive, the second electric field is negative, and vice versa.
[0077] Therefore, it can be seen that the electric fields experienced by the first piezoelectric layer 110 and the second piezoelectric layer 150 are symmetrical. According to the principle of piezoelectric effect, the first piezoelectric layer 110 will deform and vibrate along the direction of the first electric field, and the second piezoelectric layer 150 will deform and vibrate along the direction of the second electric field. Therefore, in the absence of other external factors, the vibration directions of the first piezoelectric layer 110 and the second piezoelectric layer 150 are opposite.
[0078] Based on the above technical solution, since the electric fields driving the first piezoelectric layer 110 and the second piezoelectric layer 150 to vibrate are opposite, the vibration directions of the first piezoelectric layer 110 and the second piezoelectric layer 150 are opposite. Therefore, the gas trapped at the edge of the cavity 105 is driven by the electric field with symmetrical height direction, which enhances the flow effect. This part of the gas can also be effectively utilized and discharged from the opening 121, effectively carrying away the heat from the outside of the heat dissipation device 100, so as to further enhance the heat dissipation effect of the heat dissipation device 100.
[0079] In some possible embodiments, reference Figure 1 As shown, the first piezoelectric layer 110 includes a first piezoelectric substrate 112 and a second piezoelectric substrate 113, wherein a first gap 111 is spaced between the first piezoelectric substrate 112 and the second piezoelectric substrate 113; the second piezoelectric layer 150 includes a third piezoelectric substrate 151, which is located at the geometric center of the heat dissipation device 100 along with the cavity 105. Based on this structure, taking the elongated heat dissipation device 100 as an example, the first piezoelectric substrate 112 and the second piezoelectric substrate 113 correspond to the two sides of the cavity 105 along the length direction in the heat dissipation device 100. Therefore, when the first piezoelectric layer 110 is energized, it can effectively promote the airflow on both sides of the cavity 105, thereby effectively enhancing the heat dissipation effect of the heat dissipation device 100.
[0080] Figure 4 This is a schematic diagram of another heat dissipation device 100 proposed in the embodiments of this application.
[0081] Compared to Figure 1 The heat dissipation device 100 shown is... Figure 4 The heat dissipation device 100 shown has a first substrate layer 160 comprising a rigid material disposed between the diaphragm layer 140 and the second piezoelectric layer 150, and / or a second substrate layer 165 comprising a rigid material disposed between the perforated plate 120 and the first piezoelectric layer 110.
[0082] In some possible embodiments, the first substrate layer 160 can be fixed to the second piezoelectric layer 150 by bonding; similarly, the second substrate layer 165 can also be fixed to the first piezoelectric layer 110 by bonding.
[0083] Since the first substrate layer 160 comprises a rigid material and is located between the diaphragm layer 140 and the second piezoelectric layer 150, when the second piezoelectric layer 150 resonates, the first substrate layer 160 helps amplify the deformation of the diaphragm layer 140 driven by the resonance of the second piezoelectric layer 150, and can assist the diaphragm layer 140 in restoring its original shape after deformation. In addition, it can also improve the strength of the heat dissipation device 100. The same applies to the second substrate layer 165, which will not be repeated here.
[0084] In some possible embodiments, the first substrate layer 160 and / or the second substrate layer 165 may include materials such as stainless steel, alloy steel or ceramic, and the thickness range may be within the range of [20μm, 500μm].
[0085] Based on the above technical solution, the introduction of a substrate layer helps to amplify the deformation of the film layer, thereby increasing the heat dissipation efficiency of the heat dissipation device and increasing the strength of the heat dissipation device.
[0086] Figure 5 This is a schematic diagram of another heat dissipation device 100 proposed in the embodiments of this application.
[0087] refer to Figure 1 or Figure 4 As shown in the heat dissipation device 100, the perforated plate 120 in the heat dissipation device 100 includes an opening 121. Therefore, compared to any of the heat dissipation devices 100 proposed in the aforementioned embodiments, Figure 5 The number of openings 121 in the perforated plate 120 of the heat dissipation device 100 shown can be multiple.
[0088] The number of openings 121 in the heat dissipation device 100 is expanded to multiple, which on the one hand reduces the flow resistance of the gas inside the cavity 105 to the outside of the heat dissipation device 100 through the openings 121, and helps to promote the flow of the gas inside the cavity 105 to the outside; on the other hand, the airflow flowing out through multiple openings 121 can disrupt the gas distribution outside the heat dissipation device 100, thereby helping to enhance the ability of the heat dissipation device 100 to carry away the heat of the heat dissipation target 201 through the airflow.
[0089] As can be seen from the foregoing embodiments, the heat dissipation device 100 can be of various shapes and structures, including a disk structure and a strip structure. For a disk structure heat dissipation device, a spherical cap model can be used to calculate the volume of gas compression in the cavity 105 of the heat dissipation device 100.
[0090] Figure 6 It is a graphical representation of a spherical defect model.
[0091] refer to Figure 6As shown, the volume V of gas compression within the cavity 105 of the heat dissipation device 100 with a disk structure can be expressed by the following formula (3):
[0092]
[0093] Where R1 represents the radius of the spherical cap, and h is the displacement of the central origin O.
[0094] The volume V of gas compression within the hollow cavity 105 of the heat dissipation device 100 with its elongated structure can be expressed by the following formula (4):
[0095]
[0096] Where w0 represents the width of the cavity 105 of the heat dissipation device 100, L0 represents the length of the cavity 105 of the heat dissipation device 100, and h(x,y) represents the height of each point of the diaphragm layer 140 covering the cavity 105.
[0097] Figure 7 This is a schematic diagram of the gas flow inside the cavity of the heat dissipation device proposed in the embodiments of this application under high-frequency resonance.
[0098] This example uses the deformation of the diaphragm layer 140 of the elongated heat sink 100 to drive gas flow within the cavity 105. Under high-frequency resonance (e.g., a frame rate of 24kHz) and a non-first-order piezoelectric resonance (e.g., third- or fifth-order), the gas in the central region of the cavity 105 (where the opening 121 of the perforated plate 120 is located at the center of the cavity 105) is compressed (forming a high-pressure side), while the gas in the non-central region is expanded (forming a low-pressure side). Reference Figure 7 As shown in (a), under high-frequency resonance, the volume of the concave portion in the middle of cavity 105 is larger than the volume of the surrounding convex portion. Therefore, the integral result in formula (2) is smaller than that of the diaphragm layer 140 in the initial state, thus affecting the wind pressure inside cavity 105. (Reference) Figure 7 As shown in (b), in this case, some gas escapes from the high-pressure side (middle region) of cavity 105 to the low-pressure side (both sides of cavity 105). The gas that escapes to the low-pressure side of cavity 105 does not form a jet and is ejected from the opening 121. At the same time, this part of the gas will also affect the gas pressure on the high-pressure side inside cavity 105, thereby weakening the formation of the jet inside cavity 105.
[0099] In view of this, this application embodiment proposes a heat dissipation device to prevent some of the gas from escaping from the high-pressure side of the cavity to the low-pressure side, thereby enhancing the heat dissipation capacity of the heat dissipation device.
[0100] Figure 8 This is a schematic diagram of the structure of a heat dissipation device 200 proposed in an embodiment of this application.
[0101] in, Figure 8 (a) in the figure is a top view of the heat dissipation device 200. Figure 8 (b) is a cross-sectional view of the heat dissipation device 200, and section AA is in... Figure 8 (a) in the text is marked.
[0102] refer to Figure 8 As shown, the heat dissipation device 200 includes:
[0103] A perforated plate 120 includes an opening 121 that is opposite to a heat dissipation target 201.
[0104] Gasket ring 130, the gasket ring 130 is located on the first surface 122 of the orifice plate 120;
[0105] The diaphragm layer 140 is located on the side of the gasket ring layer 130 away from the perforated plate 120, and the perforated plate 120, the gasket ring layer 130 and the diaphragm layer 140 form a cavity 105.
[0106] The partition 170 is located at a target position within the cavity 105, which corresponds to the equilibrium position of the diaphragm layer 140 during resonant motion.
[0107] A piezoelectric layer 180 is located on the side of the diaphragm layer 140 away from the perforated plate 120.
[0108] It should be noted that the aforementioned equilibrium position refers to the central position of the object during vibration (also called the vibration center), which is the position where the vibrating object is stationary relative to the reference frame before it begins to vibrate, or the position where the net force along the vibration direction is equal to zero. During resonant motion, the diaphragm layer 140 will reciprocate around this equilibrium position. The resonant diaphragm layer 140 will form a standing wave, meaning that the wave crests and troughs formed by the deformation of the diaphragm layer 140 are fixed. Furthermore, during continuous resonant motion, the point on the diaphragm layer 140 with zero displacement is also fixed; this point with zero displacement corresponds to the aforementioned equilibrium position.
[0109] Therefore, by setting the partition 170 at the aforementioned equilibrium position in the cavity 105, the peaks and troughs formed during the resonance of the diaphragm layer 140 can be directly separated. Since the portion of the diaphragm layer corresponding to the equilibrium position of the diaphragm layer 140 will not be displaced during the resonance process, the partition 170 will not collide with the diaphragm layer 140 during the resonance process, thus preventing wear and noise. Furthermore, due to the partition 170, when the cavity 105 compresses the gas, the partition 170 also inhibits the gas from escaping from the high-pressure side to the low-pressure side, thereby effectively increasing the local compression ratio of the gas in the cavity 105, achieving high wind pressure and high wind speed, and increasing the heat dissipation effect of the heat dissipation device 100.
[0110] Based on the above technical solution, by setting a partition 170 at the target position corresponding to the equilibrium position of the diaphragm layer 140 in the cavity 105, the high-pressure side and the low-pressure side in the cavity 105 are blocked, thereby suppressing the escape of gas from the high-pressure side to the low-pressure side in the cavity 105, so that as much gas as possible in the cavity 105 participates in the jet formation and is ejected from the opening 121, thereby accelerating the gas flow rate, increasing the gas flow rate, and increasing the heat dissipation effect.
[0111] In some possible embodiments, the aforementioned partition 170 can be fixed to the perforated plate 120 or to the sidewall of the gasket ring 130.
[0112] In some possible embodiments, the diaphragm layer 140 has N equilibrium positions, where N is a positive integer. Correspondingly, the number of target positions within the cavity 105 is also N. Therefore, the number of spacers 170 can be M, where M is a positive integer and M is less than or equal to N. (Refer to...) Figure 8 It is known that the diaphragm layer 140 includes two equilibrium positions. Correspondingly, two partitions 170 are provided in the cavity 105, which are close to the two sides of the cavity 105 along the length direction, thereby blocking the gas from escaping from the middle region of the cavity 105 to the two side regions of the cavity 105, so that this part of the gas does not participate in the formation of the jet.
[0113] In addition, the M partitions 170 can correspond one-to-one with the M balance positions on the diaphragm layer 140, but the N balance positions on the diaphragm layer 140 may not correspond one-to-one with the N partitions 170. That is, due to process conditions or cost considerations, one or more balance positions on the diaphragm layer 140 may not have partitions 170.
[0114] In some possible embodiments, the height of the aforementioned partition 170 is less than or equal to the height of the cavity 105; or, the height difference between the aforementioned partition 170 and the cavity 105 is within a preset height range. Based on this, it can be further ensured that the partition 170 will not collide with the diaphragm layer 140 in resonance.
[0115] In some possible embodiments, the perforated plate 120 may include a plurality of openings 121. Based on the partitions disposed within the cavity 105, the cavity 105 can be divided into a plurality of sub-cavities, so at least one opening 121 can be disposed within one sub-cavity. Therefore, the plurality of openings 121 can be disposed within one sub-cavity; or, they can be disposed within multiple sub-cavities, for example, one opening 121 corresponding to one sub-cavity, etc. The plurality of openings 121 emit corresponding jets, thereby helping to disrupt the airflow outside the heat dissipation device 200, and thus helping to improve the heat dissipation effect.
[0116] It should be noted that whether the gas flow within the cavity 105 is driven by a double piezoelectric layer structure, or by a partition 170 preventing gas from escaping to the low-pressure side of the cavity 105, the purpose of these designs is to promote gas flow within the cavity 105 to form a stronger jet, thereby increasing the heat dissipation capacity of the heat dissipation device. Therefore, the various heat dissipation device structures proposed in the embodiments of this application share a unified inventive concept and can be used to solve the same technical problem.
[0117] Figure 9 This is a schematic diagram of another heat dissipation device 100 proposed in the embodiments of this application.
[0118] refer to Figure 9 As shown, the aforementioned partition 170 can also be introduced into the heat dissipation device 100.
[0119] In the heat dissipation device 100, the diaphragm layer 140 resonates based on the second piezoelectric layer 150, and the perforated plate 120 resonates based on the first piezoelectric layer 110. Therefore, the target position within the cavity 105 can correspond to either the equilibrium position of the diaphragm layer 140 or the equilibrium position of the perforated plate 120. Especially when the electric fields of the first piezoelectric layer 110 and the second piezoelectric layer 150 are opposite, the resonant motion of the perforated plate 120 is opposite to the resonant motion of the diaphragm layer 140. Thus, the target position within the cavity 105 can simultaneously correspond to the equilibrium position of both the diaphragm layer 140 and the perforated plate 120.
[0120] In some possible embodiments, in the heat dissipation device 100, the partition 170 is fixed to the sidewall of the gasket ring 130 rather than to the perforated plate 120, so as to avoid the partition 170 affecting the resonant movement of the perforated plate 120.
[0121] Furthermore, considering that the heat dissipation device needs to maintain edge fixation during vibration (e.g., the edges of the diaphragm layer and the gasket ring layer must remain fixed), this is a fundamental guarantee for the normal operation of the heat dissipation device. Therefore, this application proposes another heat dissipation device with a more robust overall structure.
[0122] Figure 10 This is a schematic diagram of the structure of a heat dissipation device 300 proposed in an embodiment of this application.
[0123] in, Figure 10 (a) in the figure is a top view of the heat dissipation device 300. Figure 10 (b) is a cross-sectional view of the heat dissipation device 300, and section AA is in... Figure 10 (a) in the text is marked.
[0124] refer to Figure 10 As shown, the heat dissipation device 300 includes:
[0125] A perforated plate 120 includes an opening 121 that is opposite to a heat dissipation target 201.
[0126] Gasket ring 130, the gasket ring 130 is located on the first surface 122 of the orifice plate 120;
[0127] The diaphragm layer 140 is located on the side of the gasket ring layer 130 away from the perforated plate 120, and the perforated plate 120, the gasket ring layer 130 and the diaphragm layer 140 form a cavity 105.
[0128] Multiple protrusions 190 penetrate the diaphragm layer 140 and are embedded in the gasket ring layer 130. The angle between the protrusions 190 and the diaphragm layer 140 is within the target angle range.
[0129] A piezoelectric layer 180 is located on the side of the diaphragm layer 140 away from the perforated plate 120.
[0130] The angle between the boss 190 and the diaphragm layer 140 refers to the smaller angle formed between them, such as an acute angle.
[0131] In some possible embodiments, the target angle range includes the interval [70°, 75°]. The target angle range can also be adaptively adjusted due to limitations such as the manufacturing process.
[0132] It should be understood that if the tilt angle of the protrusion 190 perpendicular to the diaphragm layer 140 is defined as 0, then the above-mentioned angle range of [70°, 75°] can be understood as the tilt angle of the tilted protrusion 190 being in the range of [15°, 20°].
[0133] In some possible embodiments, the aforementioned boss 190 can be inserted through the diaphragm layer 140 and embedded in the gasket ring layer 130 by a tilting stamping process.
[0134] It should be noted that the aforementioned inclined boss structure can effectively prevent the loosening of the film layers or even the failure of the heat sink 300 when it undergoes high-frequency vibration, for the following reasons:
[0135] When the heat sink 300 is working, the diaphragm layer 140 vibrates along the height direction (perpendicular to the diaphragm layer 140). The boss 190 is embedded in the gasket ring layer 130, penetrates the diaphragm layer 140, and forms an angle with it, not perpendicular to the diaphragm layer 140. Therefore, the boss 190 resists the vertical upward or downward force generated by the diaphragm layer 140 during resonance, thereby suppressing the displacement of the diaphragm layer 140 in the height direction during resonance. This ensures that the diaphragm layer 140 and the gasket ring layer 130 in the heat sink 300 do not loosen due to the continuous resonance of the diaphragm layer 140. Furthermore, the boss 190, fixed by a tilting stamping process, does not require additional fasteners to separately fix the boss 190 to the diaphragm layer 140, thus simplifying the structure of the heat sink 300.
[0136] In some possible embodiments, reference Figure 10 As shown in (a), multiple bosses 190 can be evenly distributed within the gasket ring 130.
[0137] In some possible embodiments, when the heat dissipation device 300 has other shapes and structures, the pad ring layer 130 can also be adjusted to match the overall shape of the heat dissipation device 300. For example, if the heat dissipation device 300 is a disk structure, the corresponding pad ring layer 130 can be a ring structure, and the above-mentioned multiple protrusions 190 can still be evenly distributed in the pad ring layer 130.
[0138] Based on the above technical solution, the cavity stability of the heat dissipation device can be increased, and the problem of loosening between film layers caused by continuous resonance of the heat dissipation device can be avoided, thereby helping to improve the service life of the heat dissipation device.
[0139] Based on the design concept of the heat dissipation device 300, this design concept can also be applied to the heat dissipation device 100 and heat dissipation device 200.
[0140] Figure 11 This is a schematic diagram of another heat dissipation device 100 proposed in the embodiments of this application.
[0141] For the heat dissipation device 100, the heat dissipation device 100 further includes: a plurality of first protrusions 191 and a plurality of second protrusions 192, wherein the first protrusions 191 penetrate the diaphragm layer 140 and are embedded in the gasket ring layer 130, and the included angle between the first protrusions 191 and the diaphragm layer 140 is within the aforementioned target included angle range; the second protrusions 192 penetrate the perforated plate 120 and are embedded in the gasket ring layer 130, and the included angle between the second protrusions 192 and the perforated plate 120 is within the aforementioned target included angle range.
[0142] Figure 12 This is a schematic diagram of another heat dissipation device 200 proposed in the embodiments of this application.
[0143] For the heat dissipation device 200, the heat dissipation device 200 further includes: a plurality of bosses 190, which penetrate the diaphragm layer 140 and are embedded in the gasket ring layer 130, and the included angle between the bosses 190 and the diaphragm layer 140 is within the aforementioned target included angle range.
[0144] Furthermore, embodiments of this application also propose an electronic device that includes the aforementioned heat dissipation target and any heat dissipation device as proposed in embodiments of this application.
[0145] In some possible embodiments, the above-mentioned electronic device can be any terminal device with heat dissipation requirements, such as a television set, a monitoring screen, a standalone monitor, a laptop, a tablet computer, a smartphone, etc.
[0146] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A heat dissipation device, characterized in that, include: A first piezoelectric layer, the first piezoelectric layer including a first void; A perforated plate, the perforated plate covering the first piezoelectric layer, wherein the openings of the perforated plate are opposite to the first gap; A gasket ring layer, wherein the gasket ring layer is located on the side of the perforated plate away from the first piezoelectric layer; A diaphragm layer is located on the side of the gasket ring layer away from the first piezoelectric layer, and the perforated plate, the gasket ring layer and the diaphragm layer form a cavity; The second piezoelectric layer is located on the side of the diaphragm layer away from the first piezoelectric layer.
2. The heat dissipation device according to claim 1, characterized in that, The first piezoelectric layer vibrates based on a first electric field, and the second piezoelectric layer vibrates based on a second electric field, wherein the electric fields of the first and second electric fields are in opposite directions.
3. The heat dissipation device according to claim 1 or 2, characterized in that, A first substrate layer comprising a rigid material is disposed between the diaphragm layer and the second piezoelectric layer, and / or a second substrate layer comprising a rigid material is disposed between the perforated plate and the first piezoelectric layer.
4. The heat dissipation device according to any one of claims 1 to 3, characterized in that, The heat dissipation device has a long strip-shaped structure.
5. The heat dissipation device according to any one of claims 1 to 4, characterized in that, The perforated plate has one or more openings.
6. The heat dissipation device according to any one of claims 1 to 5, characterized in that, The first piezoelectric layer includes a first piezoelectric substrate and a second piezoelectric substrate, with the first gap between the first piezoelectric substrate and the second piezoelectric substrate; the second piezoelectric layer includes a third piezoelectric substrate, and the third piezoelectric substrate and the cavity are located at the geometric center line of the heat dissipation device.
7. The heat dissipation device according to any one of claims 1 to 6, characterized in that, The first gap is opposite to the heat dissipation target.
8. The heat dissipation device according to any one of claims 1 to 7, characterized in that, The heat dissipation device also includes: The partition is located at a target position within the cavity, and the target position corresponds to the equilibrium position of the diaphragm layer during resonant motion.
9. The heat dissipation device according to any one of claims 1 to 8, characterized in that, The heat dissipation device further includes: a plurality of first protrusions and a plurality of second protrusions, wherein the first protrusions penetrate the diaphragm layer and are embedded in the gasket ring layer, and the angle between the first protrusions and the diaphragm layer is within the target angle range; the second protrusions penetrate the perforated plate and are embedded in the gasket ring layer, and the angle between the second protrusions and the perforated plate is within the target angle range.
10. The heat dissipation device according to claim 9, characterized in that, The target included angle range includes the interval [70°, 75°].
11. A heat dissipation device, characterized in that, include: A perforated plate, the perforated plate including openings, the openings being opposite to a heat dissipation target; A gasket ring layer, wherein the gasket ring layer is located on the first surface of the orifice plate; A diaphragm layer is located on the side of the gasket ring layer away from the perforated plate, and the perforated plate, the gasket ring layer and the diaphragm layer form a cavity; A partition, wherein the partition is located at a target position within the cavity, and the target position corresponds to the equilibrium position of the diaphragm layer during resonant motion; A piezoelectric layer is located on the side of the diaphragm layer away from the perforated plate.
12. The heat dissipation device according to claim 11, characterized in that, The number of target locations is N, the number of segments is M, where N and M are positive integers, and M is less than or equal to N.
13. The heat dissipation device according to claim 11 or 12, characterized in that, The height of the partition is less than or equal to the height of the cavity.
14. The heat dissipation device according to any one of claims 11 to 13, characterized in that, The heat dissipation device further includes: a plurality of protrusions, the protrusions penetrating the diaphragm layer and embedded in the gasket ring layer, the angle between the protrusions and the diaphragm layer being within the target angle range.
15. The heat dissipation device according to claim 14, characterized in that, The target included angle range includes the interval [70°, 75°].
16. An electronic device, characterized in that, It includes a heat dissipation target and a heat dissipation device as described in any one of claims 1 to 15.