Potting method and busbar assembly

Abstract

The application discloses a pouring method and a busbar assembly, and belongs to the technical field of busbars. The pouring method is used for pouring the busbar assembly. The busbar assembly has a cavity. The pouring method comprises the following steps: vacuumizing the cavity; injecting insulating pouring glue into the cavity from the bottom of the cavity to fill part of the space of the cavity; curing the injected insulating pouring glue; and after curing is completed, continuously injecting the insulating pouring glue from the top of the cavity until the cavity is filled. By means of stage pouring, one long-flow pouring is divided into two short-flow pourings, the flowing path and the liquid surface rising height of the glue in each pouring are shortened, and the opportunity of gas entrained by the flowing front is reduced. The two pourings are both carried out in a vacuum environment, and the glue in the previous pouring is not affected by the subsequent injection after curing and setting, so that the internal bubble defects of the glue are effectively reduced, the compactness and the insulation strength are improved, the risk of partial discharge and breakdown failure is reduced, and the insulation reliability and the operation stability of the busbar assembly are improved.

Description

Technical Field

[0001] This application relates to the field of busbar technology, and in particular to a potting method and busbar assembly. Background Technology

[0002] Busbar assemblies are widely used in power distribution systems. They typically encapsulate conductive structures such as positive, neutral, and negative plates within insulating potting compound to achieve electrical insulation and structural protection.

[0003] In related technologies, busbar assemblies are often potted using a one-time potting method, where the potting compound is filled into the entire cavity in a single application. However, for busbar assemblies with large dimensions or complex internal structures, the flow front of the potting compound easily traps air within the cavity, forming bubbles. Even with vacuuming during potting, it is difficult to completely remove the air trapped deep within the cavity. These residual bubbles within the insulating potting compound become encapsulated within the compound after curing, reducing the density and insulation performance of the insulating potting compound. This is especially problematic under high-voltage conditions, as it can easily lead to partial discharge or even breakdown failure, affecting the operational reliability of the busbar assembly. Summary of the Invention

[0004] This application provides a potting method and busbar assembly, aiming to solve the technical problem that the insulation potting compound is prone to residual air bubbles and reduced insulation performance due to the one-time potting method.

[0005] To achieve the above objectives, according to a first aspect of this application, a potting method is provided for potting a busbar assembly having a cavity, the potting method comprising: The cavity was evacuated; Insulating potting compound is injected from the bottom of the cavity into the cavity to fill part of the cavity space; The injected insulating potting compound is then cured. After curing, while maintaining a vacuum in the cavity, continue injecting insulating potting compound from the top of the cavity until it is filled.

[0006] In some embodiments, the busbar assembly includes a positive plate, a neutral plate, and a negative plate; The potting method further includes: Before evacuating the cavity, thermal adhesive is applied to the outer surfaces of the positive electrode plate, the negative electrode plate and the neutral electrode plate. The thermal adhesive is then cured.

[0007] In some embodiments, curing the thermal adhesive includes: The curing temperature should be controlled within the range of 80℃ to 120℃, and the curing time should be controlled within the range of 30 minutes to 60 minutes.

[0008] In some embodiments, injecting insulating potting compound into the cavity from the bottom of the cavity includes: During the potting process, the vacuum level inside the cavity is maintained at no less than -0.08 MPa.

[0009] In some embodiments, curing the injected insulating potting compound includes: Control the curing temperature between 60℃ and 80℃, and control the curing time between 60 minutes and 90 minutes.

[0010] In some embodiments, after curing is complete, insulating potting compound is injected from the top of the cavity until the cavity is completely filled, and the process further includes: The insulating potting compound is fully cured, with the curing temperature controlled at 120℃~150℃ and the curing time controlled at 2 hours~4 hours.

[0011] In some embodiments, prior to evacuating the cavity, the method further includes: The busbar assembly is placed in a positioning fixture, which is used to position the positive plate, the negative plate and the neutral plate in the busbar assembly to maintain their relative positions.

[0012] In some embodiments, the positive electrode plate, the neutral electrode plate, and the negative electrode plate are arranged along a first direction; Before injecting insulating potting compound into the cavity from the bottom, the procedure further includes: Rotate the busbar assembly and the positioning fixture together by 90° so that the cavity at the top filling port and the filling port at the bottom are arranged vertically.

[0013] In some embodiments, the busbar assembly includes a plurality of heat sinks, each heat sink including a first plate, a second plate and a spacer portion, wherein the first plate and the second plate are spaced apart along a first direction, and the spacer portion is located between the first plate and the second plate and connects the first plate and the second plate respectively. After the thermal adhesive has cured, the process further includes: At least one of the heat sinks is disposed between the positive electrode plate and the neutral electrode plate, wherein the first plate is attached to one of the positive electrode plate and the neutral electrode plate, and the second plate is attached to the other of the positive electrode plate and the neutral electrode plate; At least one of the heat sinks is disposed between the negative electrode plate and the neutral electrode plate, wherein the first plate is attached to one of the negative electrode plate and the neutral electrode plate, and the second plate is attached to the other of the negative electrode plate and the neutral electrode plate.

[0014] In some embodiments, the plurality of heat sinks include a first heat sink and a second heat sink. There are multiple first heat sinks, which are disposed between the positive electrode plate and the neutral electrode plate and are spaced apart along a second direction. There are also multiple second heat sinks, which are disposed between the negative electrode plate and the neutral electrode plate and are spaced apart along a second direction, which intersects with the first direction. The first heat sink and the second heat sink are arranged alternately along the second direction, with the spaces on both sides of the first heat sink connected and the spaces on both sides of the second direction connected, so that the potting compound can fill every position inside the cavity. According to a second aspect of this application, a busbar assembly is provided, manufactured using the potting method described in the above embodiments, the busbar assembly comprising: A housing having the cavity; A positive electrode plate, a neutral electrode plate, and a negative electrode plate are all housed within the cavity and are spaced apart from each other. The positive electrode plate is disposed on one side of the neutral electrode plate, and the negative electrode plate is disposed on the side of the neutral electrode plate opposite to the positive electrode plate. Multiple heat sinks, at least one of the heat sinks is sandwiched between the positive electrode plate and the neutral electrode plate, and at least another heat sink is sandwiched between the negative electrode plate and the neutral electrode plate; Insulating potting compound is filled into the cavity and completely covers the positive electrode plate, the neutral electrode plate, the negative electrode plate, and the plurality of heat sinks.

[0015] In some embodiments, the positive electrode plate, the neutral electrode plate, and the negative electrode plate are arranged along a first direction; The heat sink includes a first plate, a second plate, and a spacer. The first plate and the second plate are spaced apart along a first direction. The spacer is located between the first plate and the second plate and connects the first plate and the second plate respectively.

[0016] In some embodiments, the plurality of heat sinks include a first heat sink and a second heat sink; The number of first heat sinks is multiple, and the multiple first heat sinks are disposed between the positive electrode plate and the neutral electrode plate and are arranged at intervals along the second direction; The number of second heat sinks is multiple, and the multiple second heat sinks are disposed between the negative electrode plate and the neutral electrode plate and are arranged at intervals along the second direction; The second direction intersects with the first direction.

[0017] In some embodiments, the number of the spacers is multiple, and the multiple spacers are spaced apart along a third direction. The third direction, the second direction, and the first direction intersect each other.

[0018] In some embodiments, the first heat sink and the second heat sink are arranged alternately along the second direction.

[0019] In some embodiments, the outer surfaces of the positive electrode plate, the neutral electrode plate, and the negative electrode plate are all coated with thermal adhesive; The positive electrode plate, the neutral electrode plate, and the negative electrode plate are all connected to the heat sink via the thermal adhesive on their respective outer surfaces.

[0020] In some embodiments, the distance between the first plate and the second plate is not less than 3 mm.

[0021] The potting method in this application embodiment is used to pot a busbar assembly having a cavity. The potting method includes: evacuating the cavity; injecting insulating potting compound into the cavity from the bottom to fill part of the cavity space; curing the injected insulating potting compound; and after curing, continuing to inject insulating potting compound from the top of the cavity until the cavity is filled. By first evacuating the cavity to remove internal gas, then injecting and curing the insulating potting compound from the bottom, and finally continuing to inject from the top until the cavity is filled, the staged potting method breaks down a long-process potting into two short-process pottings. This shortens the flow path of the colloid and reduces the liquid level rise height during each potting process, significantly reducing the chance of gas being entrained at the flow front of the colloid. Both injections can be performed in a vacuum environment. The previously cured colloid will not shift or deform due to the subsequent injection, thus effectively reducing air bubble defects inside the cured insulating potting compound, improving the compactness and insulation strength of the colloid, reducing the risk of partial discharge and breakdown failure under high voltage conditions, and improving the insulation reliability and operational stability of the busbar assembly.

[0022] Other features and advantages of this application will be described in detail in the following detailed description section. Attached Figure Description To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0024] Figure 1 This is a three-dimensional structural schematic diagram of the busbar assembly according to an embodiment of this application; Figure 2 This is a schematic diagram of the main structure of the busbar assembly according to an embodiment of this application; Figure 3 yes Figure 2 A magnified view of a portion of point A in the diagram, showing the insulating potting compound; Figure 4 This is a schematic diagram of the front view of the housing in the busbar assembly of this application embodiment; Figure 5 This is a schematic diagram showing the connection relationship between the positive plate, neutral plate, negative plate and heat sink in the busbar assembly of this application embodiment; Figure 6 This is an exploded view of the positive plate, neutral plate, negative plate and heat sink in the bus assembly of the present application embodiment; Figure 7 yes Figure 5 A magnified view of a portion of point B in the middle; Figure 8 yes Figure 6 A magnified view of a portion of point C, showing the thermal adhesive; Figure 9 This is a schematic diagram of the left-side structure of the heat sink in the busbar assembly according to an embodiment of this application; Figure 10 This is a schematic diagram of the front view structure of the heat sink in the busbar assembly of this application embodiment.

[0025] Explanation of reference numerals in the attached figures: 10. Busbar assembly; 100. Cavity; 110. Insulating potting compound; 120. Positive plate; 130. Neutral plate; 140. Negative plate; 150. Thermal adhesive; 20. Positioning fixture; 160. Housing; 170. Heat sink; X, First direction; 171. First plate; 172. Second plate; 173. Spacing; Y, Second direction; 180. First heat sink; 190. Second heat sink; Z, Third direction. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0027] In the description of this application, it should be understood that the terms "upper," "inner," "outer," etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. In the description of this application, "multiple" means two or more, and "at least one" can refer to one, two, or more, unless otherwise explicitly specified. The terms "first," "second," "third," etc., are only for the convenience of description and are used to name components or embodiments by number, and do not imply any order of importance between the components or embodiments.

[0028] It should also be noted that in the accompanying drawings of this application, an arrow marked X indicates the first direction, an arrow marked Y indicates the second direction, and an arrow marked Z indicates the third direction. The introduction of the first direction X, the second direction Y, and the third direction Z in the description of this application is to more clearly define the structure and relative positional relationships of the components in the busbar assembly 10. In actual implementation, the first direction X is generally the thickness direction of the busbar assembly 10, and the second direction Y and the third direction Z are generally horizontal directions, intersecting each other. Optionally, the first direction X, the second direction Y, and the third direction Z are perpendicular to each other to optimize the layout of the busbar assembly 10.

[0029] As a preamble to the embodiments of this application, the busbar assembly 10 is widely used in power distribution systems. It typically encapsulates conductive structures such as the positive plate 120, neutral plate 130, and negative plate 140 within an insulating potting compound 110 to achieve electrical insulation and structural protection. In related technologies, the potting of the busbar assembly 10 often employs a one-time potting method, where the potting compound is filled into the entire cavity 100 in one go. However, for busbar assemblies 10 with large dimensions or complex internal structures, the flow front of the potting compound easily traps air within the cavity 100 during its flow process, forming bubbles. Even with vacuuming during potting, it is difficult to completely remove the air trapped deep within the cavity 100. These bubbles remaining inside the insulating potting compound 110 are sealed within the compound after curing, reducing the density and insulation performance of the insulating potting compound 110. Especially under high-voltage conditions, this can easily lead to partial discharge or even breakdown failure, affecting the operational reliability of the busbar assembly 10.

[0030] Furthermore, existing medium-voltage busbars typically employ a process where insulating films are hot-pressed onto positive and negative plates (140mm diameter), and an epoxy board is then glued between the plates. This process relies on the epoxy board as the primary insulating medium, and its manufacturing involves hot pressing and adhesive bonding. However, the hot pressing and adhesive bonding processes are prone to introducing interface defects during manufacturing, leading to lower partial discharge test voltages and failing to meet the insulation performance requirements of medium-voltage busbars. Simultaneously, the mechanical strength and dimensional stability of the epoxy board itself are limited under high-voltage, high-current conditions, affecting the overall electrical and structural performance of the busbar. Moreover, traditional hot pressing processes limit the improvement of the overall integration of the busbar, making it difficult to achieve high-precision molding of complex structures.

[0031] In terms of potting process, existing potting methods are difficult to effectively eliminate air bubbles, mainly due to unreasonable potting methods and mold designs. General mold designs do not fully consider the requirements of high-voltage busbars for uniform and dense distribution of potting materials, resulting in deficiencies in the flowability and filling properties of the potting compound.

[0032] Furthermore, medium-voltage busbars operate at higher voltages, making heat dissipation a critical requirement. In existing technologies, copper plates are typically used directly in the potting process, lacking a specific heat dissipation structure design. This leads to heat accumulation within the potting material, affecting the busbar's thermal stability and service life. Simultaneously, due to the large size of the copper plates and the lack of effective support structures during potting, the potting compound may apply uneven stress to the copper plates during curing, causing deformation and further impacting the busbar's electrical performance and structural stability.

[0033] In summary, existing medium-voltage busbars have significant shortcomings in terms of insulation performance, potting quality, heat dissipation capacity, and structural support, making it difficult to meet the comprehensive requirements for busbar performance under high voltage levels and high current densities, thus limiting the application of medium-voltage busbars in high-reliability electrical equipment.

[0034] In view of the above, this application provides a potting method to solve at least one of the above-mentioned technical problems.

[0035] The potting method disclosed in this application embodiment is used to pot a busbar assembly 10, the busbar assembly 10 having a cavity 100. The potting method includes: Vacuum the cavity 100. The vacuum process can be maintained continuously within the cavity 100 throughout the potting process, or it can be performed separately before each injection of insulating potting compound 110. The specific method depends on the structural complexity of the busbar assembly 10 and the configuration of the potting equipment.

[0036] Insulating potting compound 110 is injected into cavity 100 from the bottom to fill part of the cavity 100. In this step, the insulating potting compound 110 is gradually filled from the bottom upwards, allowing gas inside cavity 100 to escape from the top as the liquid level rises, reducing the possibility of gas being trapped inside the compound. For the bottom injection step, the amount of insulating potting compound 110 injected can be proportionally determined based on the specific dimensions and structure of the busbar assembly 10. For example, it can be set to one-half, one-third, or two-thirds of the volume of cavity 100. The goal is simply to ensure that the first injection of insulating potting compound 110, after curing, provides a stable support base for subsequent potting.

[0037] The injected insulating potting compound 110 is cured to allow it to solidify and set. The purpose of curing is to give the injected insulating potting compound 110 sufficient structural strength to support subsequent top-injected insulating potting compound 110, reducing the risk of displacement or deformation of the filled portion due to impact from subsequent injections. This curing can be complete or partial; it only needs to bring the injected compound to a strength sufficient to maintain its shape.

[0038] After curing, while maintaining a vacuum in cavity 100, continue injecting insulating potting compound 110 from the top of cavity 100 until it is completely filled. For the top injection step, after the previously injected compound has cured, continue injecting insulating potting compound 110 from the top until cavity 100 is completely filled. During this process, a vacuum environment can be maintained to eliminate any gas that may be trapped in the subsequently injected compound. At this point, the subsequently injected insulating potting compound 110 combines with the previously cured compound, and together they form a complete insulating coating layer after cavity 100 is filled.

[0039] By employing the aforementioned staged potting method, the flow path of the insulating potting compound 110 is shortened during each potting process, allowing gas to escape more easily and reducing the risk of gas encapsulation. This method is particularly suitable for large-sized or internally complex busbar assemblies 10. After curing, the number of air bubble defects inside the compound is significantly reduced, which helps to improve the insulation performance and operational reliability of the busbar assembly 10.

[0040] In some embodiments, the insulating potting compound 110 may be any one of epoxy resin, polyurethane resin, or modified silicone rubber. Epoxy resin is suitable for high-voltage applications, polyurethane resin has good elasticity and low-temperature resistance, and modified silicone rubber is suitable for high-temperature or outdoor environments. The hardness of the potting compound after complete curing is controlled between Shore hardness D 60 and 80, which provides sufficient mechanical support strength while maintaining a certain degree of elasticity to absorb thermal stress and reduce the risk of cracking. If the hardness is lower than D60, the support is insufficient; if it is higher than D80, the brittleness increases and the thermal shock resistance decreases.

[0041] In some embodiments, the dielectric strength of the insulating potting compound 110 can be selected according to the operating voltage level of the busbar assembly 10. For example, when the busbar assembly 10 is required to operate stably at 30kV, a potting compound with a dielectric strength of not less than 10kV / mm can be selected, and with an insulation spacing of not less than 3mm between the plates, the insulation requirements at this voltage level can be met. By synergistically combining the dielectric strength of the potting compound with the plate spacing, the overall size and weight of the busbar assembly 10 can be optimized while achieving insulation performance.

[0042] In some embodiments, when injecting the insulating potting compound 110 from the bottom, the injection speed can be controlled to allow the liquid level of the compound to rise smoothly, reducing the risk of turbulence and air entrainment caused by injecting too quickly.

[0043] In some embodiments, the busbar assembly 10 includes a positive plate 120, a neutral plate 130, and a negative plate 140. These three plates are the main conductive structures of the busbar assembly 10, and their surfaces need to be treated before potting. The potting method further includes: before evacuating the cavity 100, applying a thermal adhesive 150 to the outer surfaces of the positive plate 120, negative plate 140, and neutral plate 130; and curing the thermal adhesive 150. The thermal adhesive 150 can be applied to one side of each plate facing the adjacent plate or to the entire outer surface, and the application method can be scraping, spraying, or brushing. After application, the thermal adhesive 150 is cured to form a stable thermally conductive layer on the plate surface. The thermal adhesive 150 is used to conduct the heat generated during the operation of the plate to the surrounding insulating potting compound 110 or heat dissipation structure after subsequent potting, thereby improving the heat dissipation performance of the busbar assembly 10.

[0044] When curing the thermal adhesive 150, the entire bus assembly 10 coated with the thermal adhesive 150 can be placed in a heated environment, or the coated area can be cured by localized heating. The curing temperature and time can be set according to the material properties of the selected thermal adhesive 150.

[0045] In some embodiments, curing the thermal adhesive 150 includes controlling the curing temperature within the range of 80°C to 120°C and the curing time within the range of 30 minutes to 60 minutes.

[0046] Specifically, the curing temperature can be any value from 80℃, 90℃, 100℃, 110℃, and 120℃, or a range between two adjacent values. The curing time can be any value from 30 minutes, 40 minutes, 50 minutes, and 60 minutes, or a range between two adjacent values. Within this temperature and time range, the thermal adhesive 150 can fully cure, forming a uniform and well-adhered thermally conductive layer, without adversely affecting the structure and performance of the electrode plate itself. If the curing temperature is below 80℃ or the curing time is less than 30 minutes, the thermal adhesive 150 may not cure completely, affecting the thermal conductivity and interfacial bonding strength. If the curing temperature is above 120℃ or the curing time exceeds 60 minutes, it may increase process energy consumption and adversely affect certain types of electrode plate materials or surface treatment layers. Therefore, controlling the curing temperature between 80℃ and 120℃ and the curing time between 30 minutes and 60 minutes can achieve both curing quality and process efficiency.

[0047] The above-mentioned step of applying thermal adhesive 150 can be performed separately before each electrode plate is assembled into the bus assembly 10. By setting the thermal adhesive 150 layer, the heat generated by the electrode plate can be transferred more quickly to the insulating potting compound 110 or the heat sink 170 through this thermally conductive layer, thereby reducing the operating temperature of the electrode plate and extending the service life of the bus assembly 10.

[0048] In some embodiments, injecting insulating potting compound 110 into the cavity 100 from the bottom includes maintaining a vacuum level of not less than -0.08 MPa, i.e., an absolute pressure value not exceeding 20 kPa, during the potting process. Specifically, the vacuum level can be -0.09 MPa or -0.1 MPa. Injecting the insulating potting compound 110 under vacuum conditions allows for timely extraction of air entrained during the injection process, reducing the amount of air bubbles remaining inside the compound. Furthermore, any residual gas inside the cavity 100 is also discharged from the top vent or mold gaps under negative pressure, reducing the risk of gas being carried away by the rising liquid surface of the compound.

[0049] If the vacuum level is below -0.08 MPa, the negative pressure suction capacity is insufficient, making it difficult to fully expel the gas inside the potting compound and the cavity up to 100 mm deep. After curing, air bubbles are likely to remain in the compound.

[0050] The vacuum level can be maintained throughout the bottom injection phase, or the cavity 100 can be evacuated to the target vacuum level before injection begins, and then continuously evacuated during the injection process to maintain that vacuum level. Specifically, a vacuum pump can be used in conjunction with a vacuum tank, and the vacuum level within the cavity 100 can be controlled to remain stable within the target range by adjusting the pumping speed of the vacuum pump.

[0051] During the stage of continuing to inject insulating potting compound 110 at the top, the above-mentioned vacuum conditions can also be maintained so that subsequent injections of the compound will not introduce air bubbles.

[0052] By using the above-mentioned vacuum control method, the internal bubble content of the insulating potting compound 110 after curing can be reduced, the density and insulation strength of the compound can be improved, thereby enhancing the operational reliability of the busbar assembly 10 under high voltage conditions.

[0053] In some embodiments, curing the injected insulating potting compound 110 includes controlling the curing temperature at 60°C to 80°C and controlling the curing time at 60 minutes to 90 minutes. This curing step occurs after the insulating potting compound 110 is injected into the cavity 100 from the bottom and before the remaining insulating potting compound 110 is injected from the top. By moderately curing the injected insulating potting compound 110, it acquires sufficient structural strength to maintain shape stability during subsequent top injection, reducing the risk of being washed away or displaced by subsequently injected mortar.

[0054] The curing temperature is set to 60°C to 80°C, and the curing time is 60 to 90 minutes, so that the insulating potting compound 110 can undergo a cross-linking and curing reaction at a suitable rate. The curing time is set to 60 to 90 minutes; within this time range, in conjunction with the above temperature conditions, the injected insulating potting compound 110 can be fully cured to a state with sufficient strength.

[0055] Specifically, the curing temperature can be any value among 60℃, 70℃, and 80℃, or a range between two adjacent values. The curing time can be any value among 60 minutes, 70 minutes, 80 minutes, and 90 minutes, or a range between two adjacent values. If the curing temperature is too low or the time is insufficient, the colloid will not be sufficiently cured, resulting in insufficient structural strength. If the temperature is too high or the time is too long, the curing reaction may be too rapid, potentially leading to shrinkage stress concentration, interface defects, or even localized overheating due to concentrated exothermic reactions. Furthermore, excessively long curing times will reduce production efficiency and may cause excessive cross-linking of the colloid, increasing its brittleness. Therefore, controlling the curing temperature between 60℃ and 80℃ and the time between 60 minutes and 90 minutes allows for both achieving the desired curing quality and maintaining process efficiency.

[0056] It should be noted that the curing in this step can be either complete or partial. When partial curing is used, the injected insulating potting compound 110 only needs to cure to the point where it can maintain its shape and withstand the impact of subsequent potting operations. The final complete curing will be carried out uniformly after the entire cavity 100 has been filled. When complete curing is used, the injected compound reaches a fully cross-linked state in this step, and the subsequent top-injected compound bonds with the cured portion through chemical bonding or mechanical anchoring.

[0057] The above-mentioned control of curing temperature and curing time is applicable to a variety of common insulating and potting materials, such as epoxy potting compounds, polyurethane potting compounds, and silicone potting compounds.

[0058] By controlling the curing conditions as described above, the injected colloid can obtain sufficient strength while reducing problems such as shrinkage stress, interface defects, or thermal damage caused by improper curing conditions, thus providing a stable structural foundation for subsequent top potting operations.

[0059] In some embodiments, after curing is complete, insulating potting compound 110 is injected from the top of the cavity 100 until the cavity 100 is completely filled. The process further includes: fully curing the insulating potting compound 110, controlling the curing temperature at 120°C to 150°C, and controlling the curing time at 2 to 4 hours. This complete curing step ensures that both the first and second injected insulating potting compounds 110 reach a fully cross-linked and cured state. The two components form a strong chemical or physical bond at the interface, together constituting a complete, continuous, and dense insulating coating layer.

[0060] The complete curing temperature is set to 120°C to 150°C. Within this temperature range, the insulating potting compound 110 can undergo a sufficient cross-linking reaction, achieving optimal curing degree and insulation performance. The complete curing time is set to 2 hours to 4 hours. Within this time range, combined with the above temperature conditions, the insulating potting compound 110 can reach a fully cured state. Specifically, the curing temperature can be any value from 120°C, 130°C, 140°C, and 150°C, or a range between two adjacent values. The curing time can be any value from 120 minutes, 150 minutes, 180 minutes, 210 minutes, and 240 minutes, or a range between two adjacent values. If the curing temperature is too low, the cross-linking reaction may not be sufficient, resulting in a lower glass transition temperature of the colloid, leading to a decrease in its insulation performance and mechanical strength under high-temperature conditions. If the curing temperature is too high, the colloid may become brittle due to excessive cross-linking, reducing its impact resistance and thermal shock resistance. At the same time, excessively high temperatures may also have an adverse effect on other components in the bus assembly 10 (such as the heat dissipation adhesive 150 layer on the surface of the electrode plate).

[0061] If the curing time is insufficient, the colloid may not be fully cross-linked, resulting in unreacted components that affect insulation performance and long-term stability. If the curing time is too long, the process cycle will be too long, reducing production efficiency. Furthermore, for some potting compound systems, prolonged heating may cause the colloid to age or discolor.

[0062] It should be noted that the temperature and time of this complete curing step are higher than those of the aforementioned intermediate curing steps. This is because complete curing requires the insulating potting compound 110 to reach its final performance, necessitating a higher reaction temperature and a longer reaction time to ensure sufficient cross-linking. Intermediate curing, on the other hand, only requires the colloid to reach a strength sufficient to maintain its shape; therefore, a lower, gentler, and shorter curing time is used.

[0063] By controlling the above-mentioned complete curing conditions, the insulating potting compound 110 can obtain excellent insulation strength, mechanical strength and heat resistance, thereby enabling the busbar assembly 10 to operate stably for a long time under high voltage and high current conditions.

[0064] In some embodiments, before evacuating the cavity 100, the method further includes: placing the bus assembly 10 in a positioning fixture 20, the positioning fixture 20 being used to position the positive electrode plate 120, the negative electrode plate 140 and the neutral electrode plate 130 in the bus assembly 10 to maintain their relative positions.

[0065] Before being assembled into the housing 160 of the busbar assembly 10, the positive electrode plate 120, negative electrode plate 140, and neutral electrode plate 130 need to be arranged according to the design position. A certain distance needs to be maintained between the three electrode plates to meet the electrical insulation spacing requirements. Without the positioning fixture 20, the electrode plates may shift in position during the subsequent potting process due to the impact of the colloid flow or their own gravity, causing changes in the spacing between the electrode plates, which in turn affects the electrical performance of the busbar assembly 10.

[0066] The positioning fixture 20 is structured to match the shape of the busbar assembly 10. The positioning fixture 20 may have positioning grooves, positioning protrusions, or positioning clamps to fix the positions of the positive electrode plate 120, neutral electrode plate 130, and negative electrode plate 140 respectively. After the busbar assembly 10 is placed in the positioning fixture 20, each electrode plate is limited to its designed position by the positioning fixture 20, maintaining their relative positions.

[0067] After placing the busbar assembly 10 into the positioning fixture 20, subsequent steps include evacuating the cavity 100 and injecting insulating potting compound 110. Throughout the potting process, the positioning fixture 20 continuously limits the position of the electrode plates until the potting is completed and the insulating potting compound 110 has cured to a sufficient strength, at which point the positioning fixture 20 is removed.

[0068] By setting the positioning fixture 20, the relative position between the plates can be kept stable during the potting process, reducing the risk of uneven spacing caused by plate offset, thereby improving the electrical insulation consistency and structural reliability of the busbar assembly 10.

[0069] The positioning fixture 20 can be customized according to the specific structure of the busbar assembly 10, and the material can be metal or rigid plastic. When metal is used, the surface of the fixture can be polished to reduce adhesion to the potting compound, and insulation measures must be provided at the electrode pin positions. When rigid plastic is used, insulation measures can be omitted, but the plastic material needs to have sufficient heat resistance and dimensional stability at the potting temperature. Polishing can reduce adhesion between the fixture and the busbar assembly 10 after potting, facilitating demolding.

[0070] In some embodiments, the positive electrode plate 120, the neutral electrode plate 130, and the negative electrode plate 140 are arranged along a first direction X; before injecting insulating potting compound 110 into the cavity 100 from the bottom of the cavity 100, the method further includes: rotating the busbar assembly 10 and the positioning fixture 20 as a whole by 90°, so that the cavity 100 is arranged vertically with the top potting port and the bottom potting port.

[0071] Before rotation, the busbar assembly 10 is in its initial placement position, with the first direction X parallel to the vertical direction, meaning the positive electrode 120, neutral electrode 130, and negative electrode 140 are arranged vertically in sequence. At this time, the three electrodes are arranged vertically. After rotating the busbar assembly 10 and the positioning fixture 20 as a whole by 90°, the first direction X changes from vertical to horizontal, meaning the three electrodes are arranged horizontally in sequence. Simultaneously, the top and bottom potting openings of the cavity 100 are arranged vertically. At this time, the insulating potting compound 110 injected from the bottom potting opening gradually rises vertically from bottom to top, covering the gaps between the electrodes simultaneously during its ascent. Because the electrodes are arranged horizontally, the compound fills the gaps between the positive electrode 120 and the neutral electrode 130, as well as between the neutral electrode 130 and the negative electrode 140, at the same height during its ascent, resulting in more uniform filling and a smoother exhaust path.

[0072] In this rotation step, the busbar assembly 10 and the positioning fixture 20 rotate together as a whole, and their relative positions remain unchanged during the rotation, thus ensuring that the positioning fixture 20's limiting effect on the electrode plate remains effective after rotation. The rotation angle is 90°, that is, a 90° rotation from the initial position around a rotation axis. This rotation axis is typically perpendicular to the plane defined by the first direction X and the vertical direction.

[0073] By rotating the plates as described above, the arrangement direction of the plates is adjusted from vertical to horizontal. This allows the insulating potting compound 110 injected from the bottom to fill the gaps between the plates simultaneously during the vertical ascent. This reduces the risk of uneven filling caused by the difference in filling order at different heights when the plates are arranged vertically. It also facilitates the discharge of gas from the cavity 100 and improves the potting quality.

[0074] In some embodiments, the busbar assembly 10 includes a plurality of heat sinks 170. Each heat sink 170 includes a first plate 171, a second plate 172, and a spacer 173. The first plate 171 and the second plate 172 are spaced apart along a first direction X. The spacer 173 is located between the first plate 171 and the second plate 172 and connects the first plate 171 and the second plate 172 respectively. After the thermal adhesive 150 is cured, the method further includes: disposing at least one heat sink 170 between the positive electrode plate 120 and the neutral electrode plate 130, wherein a first plate 171 is bonded to one of the positive electrode plate 120 and the neutral electrode plate 130, and a second plate 172 is bonded to the other of the positive electrode plate 120 and the neutral electrode plate 130; and disposing at least another heat sink 170 between the negative electrode plate 140 and the neutral electrode plate 130, wherein a first plate 171 is bonded to one of the negative electrode plate 140 and the neutral electrode plate 130, and a second plate 172 is bonded to the other of the negative electrode plate 140 and the neutral electrode plate 130.

[0075] In some embodiments, the plurality of heat sinks 170 include a first heat sink 180 and a second heat sink 190. There are multiple first heat sinks 180, which are disposed between the positive electrode plate 120 and the neutral electrode plate 130 and are spaced apart along the second direction Y. There are multiple second heat sinks 190, which are disposed between the negative electrode plate 140 and the neutral electrode plate 130 and are spaced apart along the second direction Y, which intersects with the first direction X. The first heat sink 180 and the second heat sink 190 are arranged alternately along the second direction Y. The space on both sides of the first heat sink 180 and the space on both sides of the second direction Y are connected, so that the potting compound 110 can fill every position inside the cavity 100, thereby improving the heat dissipation efficiency of the bus assembly 10.

[0076] Please see Figures 1 to 5 As shown in the embodiments of this application, a busbar assembly 10 is also provided, which is manufactured using the potting method described in the above embodiments. The busbar assembly 10 includes a housing 160, a positive electrode plate 120, a neutral electrode plate 130, a negative electrode plate 140, a plurality of heat dissipation plates 170, and an insulating potting compound 110. The housing 160 has a cavity 100, which is used to accommodate the conductive and heat dissipation structures of the busbar assembly 10. The positive electrode plate 120, the neutral electrode plate 130, and the negative electrode plate 140 are all housed in the cavity 100 and are spaced apart from each other. The positive electrode plate 120 is disposed on one side of the neutral electrode plate 130, and the negative electrode plate 140 is disposed on the side of the neutral electrode plate 130 opposite to the positive electrode plate 120. That is, along the arrangement direction of the three plates, the neutral plate 130 is located between the positive plate 120 and the negative plate 140, a first gap space is formed between the positive plate 120 and the neutral plate 130, and a second gap space is formed between the neutral plate 130 and the negative plate 140.

[0077] At least one heat sink 170 is sandwiched between the positive electrode plate 120 and the neutral electrode plate 130, and at least another heat sink 170 is sandwiched between the negative electrode plate 140 and the neutral electrode plate 130; these fill the cavity 100 and completely cover the positive electrode plate 120, the neutral electrode plate 130, the negative electrode plate 140, and the multiple heat sinks 170. "At least one" means that the number of heat sinks 170 can be one, two, or more, as long as at least one heat sink 170 is disposed between the positive electrode plate 120 and the neutral electrode plate 130; "at least another" means that the number of heat sinks 170 can be one, two, or more, as long as at least one heat sink 170 is disposed between the negative electrode plate 140 and the neutral electrode plate 130. When multiple heat sinks 170 are disposed between the positive electrode plate 120 and the neutral electrode plate 130, the multiple heat sinks 170 are arranged at intervals along the plate surface direction; similarly, when multiple heat sinks 170 are disposed between the negative electrode plate 140 and the neutral electrode plate 130, the multiple heat sinks 170 are arranged at intervals along the plate surface direction. The insulating potting compound 110 fills the entire cavity 100, encapsulating all components housed within the cavity 100, so that electrical insulation and structural fixation are achieved between the various electrodes and between the electrodes and the heat sinks 170 through the insulating potting compound 110.

[0078] By setting the heat sink 170, the heat generated by the busbar assembly 10 during operation can be conducted and dissipated more quickly through the heat sink 170, reducing the operating temperature of the electrode plates, improving the heat dissipation capacity of the busbar assembly 10, and enhancing the thermal stability and service life of the product. Simultaneously, the heat sink 170, sandwiched between the electrode plates, also provides support, maintaining the relative position between the electrode plates during and after potting, reducing the possibility of deformation of the electrode plates under the shrinkage stress of the potting compound during curing.

[0079] In some embodiments, the heat sink 170 may be made of a material with good thermal conductivity and insulation properties, such as a metal material with an insulating surface or a ceramic matrix composite material that is inherently insulating. The heat sink 170 may use copper or aluminum as the base material, and an insulating layer may be formed on the surface of the base material through oxidation treatment, coating with insulating varnish, or covering with an insulating film. By providing an insulating layer, the heat sink 170 achieves good thermal conductivity while preventing the formation of an electrical conductive path between the positive electrode 120 and the neutral electrode 130, or between the negative electrode 140 and the neutral electrode 130, thus ensuring electrical insulation between the electrodes.

[0080] In some embodiments, the heat sink 170 is a VC (vapor chamber) heat sink 170. Compared with ordinary heat pipes, aluminum extrusion heat sinks or welded heat sinks, the VC heat sink 170 has the characteristics of fast heat conduction speed, strong temperature uniformity and high heat dissipation efficiency, and can be flexibly arranged according to the internal space shape of the bus assembly 10 and local high temperature areas to optimize heat distribution.

[0081] Please see Figure 5 and Figure 7 As shown, in some embodiments, the positive electrode plate 120, the neutral electrode plate 130, and the negative electrode plate 140 are arranged along a first direction X; the heat sink 170 includes a first plate body 171, a second plate body 172, and a spacer portion 173. The first plate body 171 and the second plate body 172 are spaced apart along the first direction X, and the spacer portion 173 is located between the first plate body 171 and the second plate body 172, and connects the first plate body 171 and the second plate body 172 respectively. The first plate body 171 and the second plate body 172 are both plate-shaped structures, and their plate surface directions intersect with the first direction X. The first plate body 171 and the second plate body 172 are arranged opposite to each other along the first direction X, forming a certain gap between them. The spacer portion 173 is disposed between the first plate body 171 and the second plate body 172, and its two ends are respectively connected to the first plate body 171 and the second plate body 172, thereby fixing the first plate body 171 and the second plate body 172 into a whole structure.

[0082] Overall, the cross-sectional shape of the heat sink 170 is "I" shaped (e.g., Figure 10 As shown in the diagram, the first plate 171 and the second plate 172 respectively form two flanges of an I-shape, and the spacer 173 forms the web of an I-shape. Regardless of whether the heat sink 170 is sandwiched between the positive electrode plate 120 and the neutral electrode plate 130 or between the negative electrode plate 140 and the neutral electrode plate 130, the first plate 171 and the second plate 172 are respectively arranged opposite to the electrode plates on both sides along the first direction X, utilizing their large plate area to achieve heat conduction. At the same time, the connection through the spacer 173 provides structural rigidity, supports the electrode plates, and resists the stress generated during the curing and shrinkage of the potting compound.

[0083] In some embodiments, the first plate 171, the second plate 172, and the spacer 173 of the heat sink 170 can be either integrally formed or separately connected. When an integrally formed structure is used, the overall structural strength and thermal conductivity of the heat sink 170 are superior. When a separately connected structure is used, different materials or processing methods can be selected according to actual needs, making manufacturing more flexible.

[0084] In some embodiments, the spacer 173 can be a columnar structure or an oblong column structure. The cross-sectional shape of the columnar structure can be circular, elliptical, or rectangular, extending along the first direction X and connecting the first plate 171 and the second plate 172 at both ends, respectively. The cross-sectional dimensions can be adjusted according to strength and potting compound flow requirements. The cross-section of the oblong column structure is oblong or racetrack-shaped, extending along the first direction X and connecting the first plate 171 and the second plate 172 at both ends, respectively. Compared to the columnar structure with a circular cross-section, the oblong column structure has a larger cross-sectional area and higher bending stiffness with the same amount of material, and it also hinders the flow of potting compound less.

[0085] Both columnar and waist-shaped column structures can achieve the basic function of the spacer 173, namely, connecting the first plate 171 and the second plate 172 into one unit and maintaining a predetermined distance between them. In practical applications, the columnar or waist-shaped column structure can be selected as the specific form of the spacer 173 according to the stress condition of the heat sink 170, the flowability requirements of the potting compound, and the convenience of the manufacturing process.

[0086] Please see Figures 5 to 7 As shown, in some embodiments, the plurality of heat sinks 170 include a first heat sink 180 and a second heat sink 190. There are multiple first heat sinks 180, disposed between the positive electrode plate 120 and the neutral electrode plate 130, and spaced apart along the second direction Y. There are also multiple second heat sinks 190, disposed between the negative electrode plate 140 and the neutral electrode plate 130, and spaced apart along the second direction Y. The second direction Y intersects with the first direction X. Since the positive electrode plate 120 and the neutral electrode plate 130 are positioned opposite each other along the first direction X, the space between them has a certain thickness along the first direction X, and also extends to a certain extent in the second direction Y and the third direction Z. The multiple first heat sinks 180 are spaced apart along the second direction Y, meaning that the multiple first heat sinks 180 are arranged sequentially along the second direction Y within the space between the positive electrode plate 120 and the neutral electrode plate 130, forming a gap extending along the third direction Z between adjacent first heat sinks 180. Similarly, multiple second heat sinks 190 are arranged sequentially along the second direction Y in the space between the negative electrode plate 140 and the neutral electrode plate 130, and a gap extending along the third direction Z is formed between two adjacent second heat sinks 190.

[0087] Multiple first heat sinks 180 are arranged at intervals along the second direction Y, forming multiple points of support and multiple heat conduction paths between the positive electrode plate 120 and the neutral electrode plate 130, increasing the effective contact area between the heat sink 170 and the electrode plate, and improving heat dissipation efficiency. Simultaneously, the gaps between adjacent first heat sinks 180 provide a flow channel for the potting compound, allowing it to pass through the gaps between the heat sinks 170 along the third direction Z, ensuring the electrode plate surface is fully covered by the potting compound. Similarly, multiple second heat sinks 190 are arranged at intervals along the second direction Y, providing multiple points of support and multiple heat conduction paths between the negative electrode plate 140 and the neutral electrode plate 130. The gaps between adjacent second heat sinks 190 also facilitate the flow and filling of the potting compound.

[0088] Through the aforementioned distributed arrangement, the heat sink 170 is distributed in multiple independent units within the space between the electrode plates, achieving both heat conduction and support functions, while also resolving the issue of obstructed potting compound flow that might occur when using a single heat sink 170. Simultaneously, the distributed heat sink 170 maintains a stable relative position with the electrode plates during the potting process, forming a heat dissipation framework embedded within the insulating potting compound 110 after the potting compound cures, thus enhancing the overall structural strength of the busbar assembly 10.

[0089] In some embodiments, the second direction Y is perpendicular to the first direction X. During potting, the first direction X is horizontal, the second direction Y is also horizontal but perpendicular to the first direction X, and the third direction Z is parallel to the vertical direction, with each of the three directions being perpendicular to the others. In this arrangement, multiple first heat sinks 180 and multiple second heat sinks 190 are arranged at intervals along the second direction Y in the horizontal plane, and the surface of each heat sink 170 extends in the vertical direction, which is beneficial for the flow and filling of the potting compound under gravity.

[0090] In some embodiments, the spacing between two adjacent first heat sinks 180 and the spacing between two adjacent second heat sinks 190 can be set according to the size of the bus assembly 10 and the heat dissipation requirements. A reasonable spacing setting ensures a sufficient number of heat sinks 170 for effective heat dissipation while also providing ample channel space for the flow of potting compound.

[0091] Please see Figure 9 As shown, in some embodiments, there are multiple spacers 173, which are spaced apart along a third direction Z; the third direction Z, the second direction Y, and the first direction X intersect each other. After the heat sink 170 is installed between the plates, the surface direction of the heat sink 170 is generally parallel or approximately parallel to the third direction Z. The spacers 173 being spaced apart along the third direction Z means that in the extension direction of the heat sink 170, the multiple spacers 173 are discretely distributed, dividing the space between the first plate 171 and the second plate 172 into multiple subspaces arranged along the third direction Z.

[0092] By setting multiple spacers 173 and arranging them at Z intervals along the third direction, on the one hand, the multiple spacers 173 form a multi-point connection between the first plate 171 and the second plate 172, which improves the overall structural strength and deformation resistance of the heat sink 170, enabling it to better resist the stress generated during the curing and shrinkage of the potting compound and maintain the relative position between the plates. On the other hand, the space between adjacent spacers 173 constitutes a channel for the potting compound to flow inside the heat sink 170, allowing the potting compound to pass through the gaps between the spacers 173 during injection and flow from one side of the heat sink 170 to the other, reducing the risk of insufficient potting compound filling due to obstruction by the heat sink 170.

[0093] Multiple spacers 173 are arranged at intervals, allowing the potting compound to flow vertically under gravity during injection, passing through the gaps between adjacent spacers 173. This facilitates uniform filling of the potting compound within the heat sink 170 and the removal of air bubbles. The multiple spacers 173 are arranged at intervals along the third direction (Z), and the spacing between two adjacent spacers 173 can be set according to the size of the heat sink 170, the flowability of the potting compound, and structural strength requirements.

[0094] With the arrangement of the aforementioned intervals 173, the heat sink 170 achieves heat conduction and support functions while forming multiple interconnected channels inside, allowing the potting compound to be fully filled during the potting process and reducing the risk of dead corners caused by the closed structure of the heat sink 170.

[0095] In some embodiments, the arrangement of the spacers 173 is not limited to equal spacing along the third direction Z; a staggered or matrix layout can also be used. A staggered layout means that adjacent rows of spacers 173 are staggered along the third direction Z; a matrix layout means that multiple spacers 173 are neatly arranged in rows and columns along the surface of the heat sink 170. These different arrangements can be selected based on the stress conditions of the heat sink 170 and the flow requirements of the potting compound to meet the specific needs of different busbar assemblies 10.

[0096] Please see Figure 7As shown, in some embodiments, the first heat sink 180 and the second heat sink 190 are arranged alternately along the second direction Y. Since the first heat sink 180 is disposed between the positive electrode plate 120 and the neutral electrode plate 130, and the second heat sink 190 is disposed between the negative electrode plate 140 and the neutral electrode plate 130, when they are arranged alternately along the second direction Y, at the same position in the second direction Y, the first heat sink 180 is disposed between the positive electrode plate 120 and the neutral electrode plate 130, while the second heat sink 190 is disposed between the negative electrode plate 140 and the neutral electrode plate 130. They are staggered in the second direction Y and are not in the same lateral position. When moving to the next position along the second direction Y, the first heat sink 180 between the positive electrode plate 120 and the neutral electrode plate 130 disappears, while the second heat sink 190 appears between the negative electrode plate 140 and the neutral electrode plate 130, and this alternation repeats.

[0097] With this alternating arrangement, the first heat dissipation plate 180 between the positive electrode plate 120 and the neutral electrode plate 130 and the second heat dissipation plate 190 between the negative electrode plate 140 and the neutral electrode plate 130 are staggered in the second direction Y, so that the positive electrode plate 120 and the negative electrode plate 140 cannot simultaneously form a symmetrical heat conduction path through the heat dissipation plate 170 at the same position in the second direction Y, which helps to form a more uniform heat dissipation distribution between the positive electrode plate 120 and the negative electrode plate 140.

[0098] Alternating arrangement allows a second heat sink 190 to be placed between two adjacent first heat sinks 180, with the projection of the second heat sink 190 in the second direction Y located at the interval between the two first heat sinks 180. Correspondingly, a first heat sink 180 is placed between two adjacent second heat sinks 190.

[0099] It should be noted that alternating arrangement does not mean that the number of first heat sinks 180 and second heat sinks 190 must be exactly equal. When the number of first heat sinks 180 is one more than the number of second heat sinks 190, the arrangement along the second direction Y begins with and ends with the first heat sink 180; when the number of second heat sinks 190 is one more than the number of first heat sinks 180, the arrangement along the second direction Y begins with and ends with the second heat sink 190. All of the above situations fall within the scope of alternating arrangement.

[0100] By arranging the first heat sink 180 and the second heat sink 190 alternately along the second direction Y, the distance between the heat sink 170 between the two plates is increased, which is conducive to the full contact between the heat sink 170 and the insulating potting compound 110, so that the potting compound can better fill between each heat sink 170 and improve the compactness of the potting.

[0101] In some embodiments, the spacing between two adjacent first heat sinks 180 is equal to the spacing between two adjacent second heat sinks 190, achieving uniformity in alternating arrangement. In this case, the spacing between any two adjacent heat sinks 170 along the second direction Y (whether they belong to the first heat sink 180 or the second heat sink 190) is equal.

[0102] Please see Figure 6 and Figure 8 As shown, in some embodiments, the outer surfaces of the positive electrode plate 120, the neutral electrode plate 130, and the negative electrode plate 140 are all coated with thermal adhesive 150. The positive electrode plate 120, the neutral electrode plate 130, and the negative electrode plate 140 are all connected to the heat sink 170 through the thermal adhesive 150 on their respective outer surfaces.

[0103] The positive electrode plate 120 is connected to the first heat sink 180 disposed between the positive electrode plate 120 and the neutral electrode plate 130 via the thermal adhesive 150. Similarly, the negative electrode plate 140 is connected to the second heat sink 190 disposed between the negative electrode plate 140 and the neutral electrode plate 130 via the thermal adhesive 150. The side of the neutral electrode plate 130 facing the positive electrode plate 120 is connected to the first heat sink 180 via the thermal adhesive 150, and the side facing the negative electrode plate 140 is connected to the second heat sink 190 via the thermal adhesive 150.

[0104] Thermal adhesive 150 is applied to the outer surface of each electrode plate, forming a thermally conductive interface layer between the electrode plate and the heat sink 170. When the heat sink 170 is installed between the electrode plates, the surface of the heat sink 170 contacts the thermal adhesive 150 layer on the electrode plate surface. The thermal adhesive 150 fills the microscopic gaps between the electrode plate and the heat sink 170, creating a good heat conduction path between them. The heat generated during electrode operation is transferred from the electrode plate to the thermal adhesive 150 layer, then from the thermal adhesive 150 layer to the heat sink 170, and finally dissipated or transferred to the surrounding insulating potting compound 110 through the heat sink 170.

[0105] In some embodiments, the thermal adhesive 150 can be applied to the outer surface of the electrode plate by scraping, spraying, or brushing. The coating area of ​​the thermal adhesive 150 can cover the entire outer surface of the electrode plate, or it can only cover the portion of the electrode plate that is opposite to the heat sink 170. When the thermal adhesive 150 only covers the portion of the electrode plate that is opposite to the heat sink 170, the amount of thermal adhesive 150 used can be reduced, while leaving other areas of the outer surface of the electrode plate exposed, which is beneficial for direct contact and adhesion between the insulating potting compound 110 and the electrode plate.

[0106] In some embodiments, the thermal conductivity of the thermal adhesive 150 is greater than 2 W / (m·K), the viscosity is less than 5000 mPa·s, and the coating thickness is controlled between 0.5 mm and 1.5 mm to ensure good thermal conduction while reducing the risk of increased thermal resistance or impact on insulation spacing due to excessive adhesive layer thickness.

[0107] With the above-mentioned thermal adhesive 150, a thermal connection is achieved between the electrode plate and the heat sink 170, and heat can be transferred from the electrode plate to the heat sink 170. At the same time, the thermal adhesive 150 acts as a buffer between the electrode plate and the heat sink 170, absorbing the stress generated by the curing of the potting compound, and using its adhesive strength to fix the heat sink 170 to a predetermined position on the surface of the electrode plate.

[0108] In some embodiments, the distance between the first plate 171 and the second plate 172 is not less than 3 mm. This distance refers to the vertical distance between the surface of the first plate 171 facing the second plate 172 and the surface of the second plate 172 facing the first plate 171, that is, the gap size between the two opposite sides of the first plate 171 and the second plate 172, which is determined by the size of the spacer portion 173 along the first direction X.

[0109] The aforementioned spacing setting directly relates to the electrical insulation distance between the electrode plates. When the heat sink 170 is sandwiched between the positive electrode plate 120 and the neutral electrode plate 130, the first plate 171 and the second plate 172 face the positive electrode plate 120 and the neutral electrode plate 130 respectively, and the distance between them constitutes part of the insulation path between the positive electrode plate 120 and the neutral electrode plate 130. Setting this distance to not less than 3mm can meet the basic requirements for the insulation distance between the medium-voltage busbar and the electrode plates, which helps to ensure the insulation reliability of the busbar assembly 10 under rated voltage. Similarly, when the heat sink 170 is sandwiched between the negative electrode plate 140 and the neutral electrode plate 130, this distance also constitutes part of the insulation path between the negative electrode plate 140 and the neutral electrode plate 130.

[0110] On the other hand, the space between the first plate 171 and the second plate 172 is filled with insulating potting compound 110. A spacing of not less than 3mm provides sufficient space for the potting compound to flow fully and completely fill the space between the first plate 171 and the second plate 172, reducing the risk of insufficient potting compound entry or incomplete filling due to a small spacing. The insulating potting compound 110 filled within this spacing forms a tight bond with the first plate 171 and the second plate 172, completely encapsulating the heat sink 170 within the insulating potting compound 110.

[0111] Furthermore, when multiple spacers 173 are provided between the first plate 171 and the second plate 172, a spacing of not less than 3mm is also beneficial for the setting and processing of the spacers 173, ensuring that the spacers 173 have sufficient structural dimensions to provide reliable connection strength.

[0112] In some embodiments, the spacing between the first plate 171 and the second plate 172 can be adaptively adjusted according to the operating voltage level of the bus assembly 10. When the operating voltage is high, the spacing can be increased accordingly to meet higher insulation requirements. When the operating voltage is low, the spacing can be appropriately reduced to optimize the spatial layout, provided that it is not less than 3 mm.

[0113] Please see Figure 1 As shown, in some embodiments, a custom-designed tooling is used to position and limit the busbar assembly 10 during the potting process. This mold is custom-designed according to the geometry of the busbar assembly 10 and is made entirely of metal steel plate to ensure sufficient structural rigidity and surface flatness. The bottom of the mold is completely closed, while the top is completely open, facilitating the injection of insulating potting compound 110 from the bottom and the venting of gas from the top. In areas where the pins of the busbar assembly 10 interfere with the mold structure, insulating paper is used to fill the gaps, reducing the risk of electrical short circuits between the pins and the mold. After potting is complete and the insulating potting compound 110 has fully cured, the insulating paper is removed to facilitate subsequent pin processing and electrical connections of the busbar assembly 10.

[0114] Please see Figure 1 As shown, in some embodiments, the positioning fixture 20 is provided with positioning holes and fixing clamps. The positioning holes are used to cooperate with the positioning structure on the housing 160 of the busbar assembly 10 to achieve rapid positioning between the fixture and the busbar assembly 10; the fixing clamps are used to clamp the edges or pins of the positive electrode plate 120, the neutral electrode plate 130 and the negative electrode plate 140, so that each electrode plate maintains a stable relative position during the potting process.

[0115] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0116] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0117] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A potting method, characterized in that, For potting busbar assembly (10), the busbar assembly (10) having a cavity (100), the potting method includes: The cavity (100) is evacuated; Insulating potting compound (110) is injected from the bottom of the cavity (100) into the cavity (100) to fill part of the space of the cavity (100); The injected insulating potting compound (110) is then cured; After curing, while maintaining a vacuum in the cavity (100), continue to inject insulating potting compound (110) from the top of the cavity (100) until the cavity (100) is filled.

2. The potting method according to claim 1, characterized in that, The busbar assembly (10) includes a positive plate (120), a neutral plate (130) and a negative plate (140). The potting method further includes: Before evacuating the cavity (100), thermal adhesive (150) is applied to the outer surfaces of the positive electrode plate (120), the negative electrode plate (140) and the neutral electrode plate (130). The thermal adhesive (150) is cured.

3. The potting method according to claim 2, characterized in that, The curing of the thermal adhesive (150) includes: The curing temperature should be controlled within the range of 80℃ to 120℃, and the curing time should be controlled within the range of 30 minutes to 60 minutes.

4. The potting method according to claim 1, characterized in that, The injection of insulating potting compound (110) from the bottom of the cavity (100) into the cavity (100) includes: During the potting process, the vacuum level inside the cavity (100) is maintained at no less than -0.08 MPa.

5. The potting method according to claim 1, characterized in that, The curing of the injected insulating potting compound (110) includes: Control the curing temperature between 60℃ and 80℃, and control the curing time between 60 minutes and 90 minutes.

6. The potting method according to claim 1, characterized in that, After curing, insulating potting compound (110) is injected from the top of the cavity (100) until the cavity (100) is completely filled. This process also includes: The insulating potting compound (110) is fully cured, with the curing temperature controlled at 120℃~150℃ and the curing time controlled at 2 hours~4 hours.

7. The potting method according to claim 2, characterized in that, Before evacuating the cavity (100), the following steps are also included: The busbar assembly (10) is placed in the positioning fixture (20), which is used to position the positive plate (120), the negative plate (140) and the neutral plate (130) in the busbar assembly (10) to maintain their relative positions.

8. The potting method according to claim 7, characterized in that, The positive electrode plate (120), the neutral electrode plate (130) and the negative electrode plate (140) are arranged along the first direction (X); Before injecting insulating potting compound (110) into the cavity (100) from the bottom, the method further includes: Rotate the busbar assembly (10) and the positioning fixture (20) together by 90° so that the cavity (100) is arranged vertically with the top filling port and the bottom filling port.

9. The potting method according to claim 2, characterized in that, The busbar assembly (10) includes a plurality of heat sinks (170). Each heat sink (170) includes a first plate (171), a second plate (172), and a spacer (173). The first plate (171) and the second plate (172) are spaced apart along a first direction (X). The spacer (173) is located between the first plate (171) and the second plate (172) and connects the first plate (171) and the second plate (172) respectively. After the thermal adhesive (150) has been cured, the process further includes: At least one of the heat sinks (170) is disposed between the positive electrode plate (120) and the neutral electrode plate (130), wherein the first plate (171) is attached to one of the positive electrode plate (120) and the neutral electrode plate (130), and the second plate (172) is attached to the other of the positive electrode plate (120) and the neutral electrode plate (130); At least one of the heat sinks (170) is disposed between the negative electrode plate (140) and the neutral electrode plate (130), wherein the first plate (171) is attached to one of the negative electrode plate (140) and the neutral electrode plate (130), and the second plate (172) is attached to the other of the negative electrode plate (140) and the neutral electrode plate (130).

10. The potting method according to claim 9, characterized in that, The plurality of heat sinks (170) include a first heat sink (180) and a second heat sink (190). There are multiple first heat sinks (180), which are disposed between the positive electrode plate (120) and the neutral electrode plate (130) and are spaced apart along the second direction (Y). There are multiple second heat sinks (190), which are disposed between the negative electrode plate (140) and the neutral electrode plate (130) and are spaced apart along the second direction (Y), which intersects the first direction (X). The first heat sink (180) and the second heat sink (190) are arranged alternately along the second direction (Y). The space between the first heat sink (180) and the space between the second heat sink (190) and the second heat sink (190) are connected, so that the potting compound (110) can fill each position inside the cavity (100).

11. A busbar assembly, characterized in that, The busbar assembly (10) is manufactured using the potting method as described in any one of claims 1 to 10, and comprises: Housing (160), the housing (160) having the cavity (100); A positive electrode plate (120), a neutral electrode plate (130), and a negative electrode plate (140) are provided. The positive electrode plate (120), the neutral electrode plate (130), and the negative electrode plate (140) are all housed in the cavity (100) and are spaced apart from each other. The positive electrode plate (120) is disposed on one side of the neutral electrode plate (130), and the negative electrode plate (140) is disposed on the side of the neutral electrode plate (130) away from the positive electrode plate (120). Multiple heat sinks (170), at least one of the heat sinks (170) is sandwiched between the positive electrode plate (120) and the neutral electrode plate (130), and at least another heat sink (170) is sandwiched between the negative electrode plate (140) and the neutral electrode plate (130); Insulating potting compound (110) is filled into the cavity (100) and completely covers the positive electrode plate (120), the neutral electrode plate (130), the negative electrode plate (140) and the plurality of heat sinks (170).

12. The busbar assembly according to claim 11, characterized in that, The positive electrode plate (120), the neutral electrode plate (130) and the negative electrode plate (140) are arranged along the first direction (X); The heat sink (170) includes a first plate (171), a second plate (172) and a spacer (173). The first plate (171) and the second plate (172) are spaced apart along a first direction (X). The spacer (173) is located between the first plate (171) and the second plate (172) and connects the first plate (171) and the second plate (172) respectively.

13. The busbar assembly according to claim 12, characterized in that, The plurality of heat sinks (170) include a first heat sink (180) and a second heat sink (190). The number of the first heat sink (180) is multiple, and the multiple first heat sinks (180) are disposed between the positive electrode plate (120) and the neutral electrode plate (130) and are arranged at intervals along the second direction (Y); The number of the second heat sink (190) is multiple, and the multiple second heat sinks (190) are disposed between the negative electrode plate (140) and the neutral electrode plate (130) and are arranged at intervals along the second direction (Y); The second direction (Y) intersects with the first direction (X).

14. The busbar assembly according to claim 12 or 13, characterized in that, The number of the spacers (173) is multiple, and the multiple spacers (173) are arranged at intervals along a third direction (Z); The third direction (Z), the second direction (Y), and the first direction (X) intersect each other.

15. The busbar assembly according to claim 13, characterized in that, The first heat sink (180) and the second heat sink (190) are arranged alternately along the second direction (Y).

16. The busbar assembly according to claim 11, characterized in that, The outer surfaces of the positive electrode plate (120), the neutral electrode plate (130) and the negative electrode plate (140) are all coated with thermal adhesive (150). The positive electrode plate (120), the neutral electrode plate (130) and the negative electrode plate (140) are all connected to the heat sink plate (170) through the heat dissipation adhesive (150) on their respective outer surfaces.

17. The busbar assembly according to claim 12, characterized in that, The distance between the first plate (171) and the second plate (172) is not less than 3mm.

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