Image sensing device

Abstract

Image sensing devices including pixel isolation structures are disclosed. In embodiments, an image sensing device includes a first pixel and a second pixel. The first pixel includes a first photoelectric conversion region configured to detect light of a first wavelength range and a first pixel isolation structure surrounding the first photoelectric conversion region and having a first width. The second pixel includes a second photoelectric conversion region configured to detect light of the first wavelength range and a second pixel isolation structure surrounding the second photoelectric conversion region and having a second width that is less than the first width.

Description

Technical Field

[0001] The technologies and embodiments disclosed in this patent document generally relate to image sensing devices, and more specifically, to image sensing devices including one or more pixel isolation structures. Background Technology

[0002] Image sensing devices capture optical images by converting light into electrical signals using photosensitive semiconductor materials that react to light. With advancements in industries such as automotive, medical, computer, and communications, the demand for high-performance image sensing devices is growing across a wide range of fields, including smartphones, digital cameras, gaming consoles, IoT (Internet of Things), robotics, security cameras, and medical miniature cameras.

[0003] Image sensing devices can be broadly categorized into charge-coupled device (CCD) image sensing devices and complementary metal-oxide-semiconductor (CMOS) image sensing devices. Compared to CMOS image sensing devices, CCD image sensing devices offer better image quality, but they tend to consume more power and are larger. CMOS image sensing devices, on the other hand, are smaller and consume less power than CCD image sensing devices. Furthermore, CMOS image sensing devices are manufactured using CMOS fabrication technology, allowing the photosensitive element and other signal processing circuitry to be integrated into a single chip, thus enabling the production of miniaturized image sensing devices at a lower cost. For these reasons, CMOS image sensing devices are being developed for many applications, including mobile devices. Summary of the Invention

[0004] Various embodiments of the disclosed technology relate to an image sensing device comprising pixels with different sensitivities to light within the same wavelength range, without the need for separate, complex circuitry.

[0005] In embodiments of the disclosed technology, an image sensing device may include a first pixel and a second pixel. The first pixel includes: a first photoelectric conversion region configured to detect light in a first wavelength range; and a first pixel isolation structure surrounding the first photoelectric conversion region and having a first width. The second pixel includes: a second photoelectric conversion region configured to detect light in the first wavelength range; and a second pixel isolation structure surrounding the second photoelectric conversion region and having a second width less than the first width.

[0006] In some implementations, the image sensing device may further include: a grid structure disposed on the first pixel isolation structure and the second pixel isolation structure at the boundary between the first pixel and the second pixel, wherein the first pixel isolation structure and the second pixel isolation structure are in contact with each other.

[0007] In some implementations, the mesh structure may include air regions.

[0008] In some implementations, the first pixel may include a first color filter that selectively transmits light of a first wavelength range in the incident light; and the second pixel may include a second color filter that selectively transmits light of a first wavelength range in the incident light, wherein a mesh structure is disposed between the first color filter and the second color filter.

[0009] In some implementations, the image sensing device may further include a third pixel and a fourth pixel. The third pixel includes: a third photoelectric conversion region configured to detect light in a second wavelength range; and a third pixel isolation structure including the third photoelectric conversion region and having a first width. The fourth pixel includes: a fourth photoelectric conversion region configured to detect light in the second wavelength range; and a fourth pixel isolation structure including the fourth photoelectric conversion region and having a second width.

[0010] In some implementations, the first pixel may include: a fifth photoelectric conversion region configured to detect light in a first wavelength range; and a first protrusion disposed between the first photoelectric conversion region and the fifth photoelectric conversion region and configured to contact the first pixel isolation structure.

[0011] In some implementations, the second pixel may include: a sixth photoelectric conversion region configured to detect light in a first wavelength range; and a second protrusion disposed between the second photoelectric conversion region and the sixth photoelectric conversion region and configured to contact the second pixel isolation structure.

[0012] In some implementations, the first pixel may include: a seventh photoelectric conversion region and an eighth photoelectric conversion region configured to detect light in a first wavelength range; a second protrusion disposed between the first photoelectric conversion region and the seventh photoelectric conversion region; a third protrusion disposed between the fifth photoelectric conversion region and the eighth photoelectric conversion region; and a fourth protrusion disposed between the seventh photoelectric conversion region and the eighth photoelectric conversion region, wherein each of the second, third, and fourth protrusions extends from the first pixel isolation structure toward the center of the first pixel.

[0013] In some implementations, the first and second pixels can touch each other; the third and fourth pixels can touch each other.

[0014] In some implementations, the third pixel may have a lower sensitivity than the fourth pixel.

[0015] In another embodiment of the disclosed technology, an image sensing device may include: a first pixel group, comprising a first pixel and a second pixel configured to detect light within a first wavelength range. The first pixel may include a first pixel isolation structure surrounding a first active region, on which light within the first wavelength range is incident. The second pixel may include a second pixel isolation structure surrounding a second active region, on which light within the first wavelength range is incident. The second pixel isolation structure may have an area smaller than that of the first pixel isolation structure.

[0016] In some implementations, the second active region may have an area larger than that of the first active region.

[0017] In some implementations, the second pixel may have a higher fill factor than the first pixel.

[0018] In some implementations, the first pixel may further include a first protrusion configured to extend from the first pixel isolation structure to the center of the first pixel in a first direction. The second pixel may further include a second protrusion configured to extend from the second pixel isolation structure to the interior of the second pixel in a first direction.

[0019] In some implementations, the first pixel may further include a third protrusion configured to extend from the first pixel isolation structure into the interior of the second pixel in a second direction. The second pixel may further include a second protrusion configured to extend from the second pixel isolation structure into the interior of the second pixel in a second direction.

[0020] In some implementations, the first pixel group may further include a third pixel and a fourth pixel configured to detect light within a first wavelength range. The third pixel may include a third pixel isolation structure configured to have a third active region thereon incident on light within the first wavelength range. The fourth pixel may include a fourth pixel isolation structure configured to have a fourth active region thereon incident on light within the first wavelength range. Each of the third and fourth pixel isolation structures may have an area smaller than that of the first pixel isolation structure.

[0021] In some implementations, the first to fourth pixels can be arranged in a (2×2) matrix, the first pixel isolation structure can contact the second and third pixel isolation structures, and the fourth pixel isolation structure can contact the second and third pixel isolation structures.

[0022] In some implementations, each of the third and fourth active regions may have an area greater than that of the first active region.

[0023] In some implementations, each of the third and fourth pixels may have a higher fill factor than the first pixel.

[0024] In some implementations, the image sensing device may further include a second pixel group, which includes a fifth pixel and a sixth pixel for detecting light in a second wavelength range and is configured to contact the first pixel group. The fifth pixel may include a fifth pixel isolation structure configured to surround a fifth active region thereon of light in the second wavelength range, and the sixth pixel may include a sixth pixel isolation structure configured to surround a sixth active region thereon of light in the second wavelength range; and the sixth pixel isolation structure may have an area smaller than that of the fifth pixel isolation structure.

[0025] In some implementations, the sixth active region may have a larger area than the fifth active region.

[0026] In some implementations, the sixth active region may have a higher fill factor than the fifth active region.

[0027] It will be understood that both the above general description and the following detailed description of the disclosed technology are illustrative and explanatory, and are intended to provide further explanation of the claimed disclosure. Attached Figure Description

[0028] The above and other features and advantages of the disclosed technology will become readily apparent when considered in conjunction with the accompanying drawings, with reference to the following detailed description.

[0029] Figure 1 This is a block diagram illustrating an example of an image sensing device based on some implementations of the disclosed technology.

[0030] Figure 2 This demonstrates some implementation methods based on the disclosed technology. Figure 1 A plan view of an example pixel array of an image sensing device.

[0031] Figure 3 This demonstrates some implementation methods based on the disclosed technology. Figure 2 The circuit diagram of the first embodiment of the pixel area shown.

[0032] Figure 4 This illustrates some implementation methods based on the disclosed technology. Figure 3 The image shows a cross-sectional view of an example pixel region intercepted by line A-A'.

[0033] Figure 5 This demonstrates some implementation methods based on the disclosed technology. Figure 2 The circuit diagram shows a second embodiment of the pixel area.

[0034] Figure 6 This illustrates some implementation methods based on the disclosed technology. Figure 5A cross-sectional view of an example pixel region intercepted by line B-B'.

[0035] Figure 7 This demonstrates some implementation methods based on the disclosed technology. Figure 2 The circuit diagram of the third embodiment of the pixel region shown. Detailed Implementation

[0036] This patent document provides embodiments and examples of an image sensing device including one or more pixel isolation structures, which can be used in a configuration that substantially solves one or more technical or engineering problems and mitigates limitations or disadvantages encountered in some image sensing devices in the art. Some embodiments of the disclosed technology relate to an image sensing device that enables pixels to have different sensitivities to light with respect to the same wavelength range without the need for separate, complex circuitry. Recognizing the aforementioned problems, image sensing devices based on some embodiments of the disclosed technology enable pixels that detect light beams within the same wavelength range to exhibit different sensitivities to light without the need for separate, complex circuitry, thereby allowing for high dynamic range (HDR) imaging.

[0037] Reference will now be made in detail to embodiments of the disclosed technology, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals will be used throughout the drawings to denote the same or similar parts. While this disclosure is readily adaptable to various modifications and alternatives, specific embodiments are shown in the drawings as examples. However, this disclosure should not be construed as limiting itself to the embodiments set forth herein.

[0038] Various embodiments will be described below with reference to the accompanying drawings. However, it should be understood that the disclosed technology is not limited to specific embodiments, but includes various modifications, equivalents, and / or substitutions of the embodiments. Embodiments of the disclosed technology can provide various effects that can be directly or indirectly identified by the disclosed technology.

[0039] Figure 1 This is a schematic diagram illustrating an example of an image sensing device 10 based on some implementations of the disclosed technology.

[0040] Reference Figure 1 The image sensing device 10 may include a timing control circuit 110, a pixel array 130, and a readout circuit 140. Figure 1 The components of the image sensing device 10 shown are discussed only as examples, and this patent document covers numerous other changes, substitutions, variations, alterations, and modifications. In this patent document, the term "pixel" may be used to refer to an image sensing pixel configured to detect incident light to generate an electrical signal carrying an image in the incident light. For example, the image sensing device 10 may be a complementary metal-oxide-semiconductor (CMOS) image sensor configured to convert incident light into an electrical signal.

[0041] The timing control circuit 110 can generate timing signals to control the drive control circuit 120 and the readout circuit 140. In some implementations, the timing control circuit 110 can generate timing signals based on requests from an external processor (e.g., an image signal processor, ISP). In some implementations, the timing control circuit 110 may include logic control circuitry, phase-locked loop (PLL) circuitry, communication interface circuitry, etc.

[0042] The drive control circuit 120 can drive the pixels of the pixel array 130 in response to a timing signal output from the timing control circuit 110. The drive control circuit 120 can select and control pixels (PX) included in at least one of multiple row lines of the pixel array 130. The drive control circuit 120 can generate a row selection signal to select at least one row from multiple rows. The drive control circuit 120 can sequentially enable pixel reset and transfer signals for pixels (PX) corresponding to at least one selected row. Therefore, image signals and analog reference signals generated from each pixel (PX) of the selected row can be sequentially sent to the readout circuit 140. The reference signal can be an electrical signal provided to the readout circuit 140 when the floating diffusion region (FD) of each pixel is reset to the power supply voltage (VDD). The image signal can be an electrical signal provided to the readout circuit 140 when photocharge generated by each pixel accumulates in the floating diffusion region (FD). As needed, the reference signal indicating the unique pixel noise of each pixel and the image signal indicating the intensity of incident light can be collectively referred to as pixel signals.

[0043] Pixel array 130 may include a plurality of pixels (PX) arranged in rows and columns. In one example, the plurality of pixels (PX) may be arranged as a two-dimensional (2D) pixel array including rows and columns. In another example, the plurality of pixels (PX) may be arranged as a three-dimensional (3D) pixel array. The plurality of pixels (PX) may convert optical signals into electrical signals based on pixels or groups of pixels, and may output pixel signals. Here, pixels in a pixel group of pixel array 130 may share at least certain internal circuitry. Pixel array 130 may receive drive signals including row selection signals, pixel reset signals, transfer signals, etc., from drive control circuit 120. Upon receiving a drive signal, the corresponding imaging pixel in pixel array 130 may be enabled to perform operations corresponding to the row selection signal, pixel reset signal, and transfer signal.

[0044] The readout circuit 140 can detect pixel signals output from the pixel array 130 under the control of the timing control circuit 110, and can output the detected pixel signals as image data. The image data can be digital data generated by performing analog-to-digital conversion on the analog pixel signals. For this purpose, the readout circuit 140 may include a correlated double sampler (CDS) for performing correlated double sampling on the pixel signals output from the pixel array 130. Additionally, the readout circuit 140 may include an analog-to-digital converter (ADC) for converting the signal output from the correlated double sampler (CDS) into a digital signal to generate pixel data. Furthermore, the readout circuit 140 may include a buffer circuit for temporarily storing the pixel data output from the ADC and outputting the stored pixel data to the outside under the control of the timing control circuit 110. The correlated double sampler (CDS) can remove unwanted offset values ​​of pixels by comparing the pixel output voltages obtained before and after the accumulation of photocharge generated by incident light in the floating diffusion region (FD), so that only the pixel output voltage based on the incident light can be measured. The readout circuit 140 can sequentially sample and hold the voltage levels of the reference signal and image signal provided from the pixel array 130 to each of the multiple column lines. That is, the readout circuit 140 can sample and hold the voltage levels of the reference signal and image signal corresponding to each column of the pixel array 130. The readout circuit 140 can convert the correlated double sampler (CDS) signals, which are analog signals for each column, into digital signals and can output the digital signals for each column. The readout circuit 140 can temporarily hold the image data for each column and can output the image data to, for example, an image processing device (not shown).

[0045] Figure 2 This demonstrates some implementation methods based on the disclosed technology. Figure 1 A plan view of an example of the pixel array 130 of the image sensing device 10 shown.

[0046] Reference Figure 1 and Figure 2 The pixel array 130 may include, for example, a structure in which a plurality of pixels (PX) are arranged in a two-dimensional (2D) matrix. The pixel array 130 may include M pixels (PX) arranged in the horizontal direction (row direction), where M is an integer greater than or equal to 2. The pixel array 130 may include N pixels (PX) arranged in the vertical direction, where N is an integer greater than or equal to 2.

[0047] Pixel array 130 may include pixel regions (Q), which include, for example, first to sixteenth pixels (PX1-PX16). In some implementations, the pixel region (Q) may be an area of ​​16 pixels arranged in a (4×4) matrix. Reference will be made below. Figure 3 A more detailed implementation of the pixel region (Q) is described.

[0048] Figure 3 This demonstrates some implementation methods based on the disclosed technology. Figure 2 The circuit diagram of the first embodiment of the pixel region (Q) shown.

[0049] Reference Figure 2 and Figure 3 The pixel region (Q1) based on the implementation method may include first to fourth pixel groups (PG1-PG4). The first to fourth pixel groups (PG1-PG4) may be arranged in a (2×2) matrix configuration.

[0050] The first pixel group (PG1) may include first to fourth pixels (PX1-PX4). For example, the first to fourth pixels (PX1-PX4) may be arranged in a (2×2) matrix configuration. Each of the first to fourth pixels (PX1-PX4) may include a microlens (not shown) that focuses incident light onto a photoelectric conversion region. Each of the first to fourth pixels (PX1-PX4) may include a color filter (not shown) that selectively transmits light having a first wavelength range (e.g., 500 nm to 600 nm), such as green light. The first to fourth pixels (PX1 to PX4) can detect light within the first wavelength range. For example, each of the first to fourth pixels (PX1-PX4) may include a photoelectric conversion region for detecting light within the first wavelength range.

[0051] The first pixel (PX1) may include a first active region (ACT1) and a first pixel isolation structure (ISO1) surrounding the first active region (ACT1). The first active region (ACT1) may include a first photoelectric conversion region (not shown). The first pixel isolation structure (ISO1) may also surround the first photoelectric conversion region. The first pixel isolation structure (ISO1) may have a first width (W1).

[0052] The second pixel (PX2) may include a second active region (ACT2) and a second pixel isolation structure (ISO2) surrounding the second active region (ACT2). The second active region (ACT2) may include a second photoelectric conversion region (not shown). The second pixel isolation structure (ISO2) may also surround the second photoelectric conversion region. The second pixel isolation structure (ISO2) may have a second width (W2). The second width (W2) may be smaller than the first width (W1). As a result, the first photoelectric conversion region has a smaller light-receiving area than the second photoelectric conversion region. Therefore, the first photoelectric conversion region has a lower optical sensitivity than the second photoelectric conversion region.

[0053] The third pixel (PX3) may include a third active region (ACT3) and a third pixel isolation structure (ISO3) surrounding the third active region (ACT3). The third active region (ACT3) may include a third photoelectric conversion region (not shown). The third pixel isolation structure (ISO3) may also surround the third photoelectric conversion region. The third pixel isolation structure (ISO3) may have a second width (W2).

[0054] The fourth pixel (PX4) may include a fourth active region (ACT4) and a fourth pixel isolation structure (ISO4) surrounding the fourth active region (ACT4). The fourth active region (ACT4) may include a fourth photoelectric conversion region (not shown). The fourth pixel isolation structure (ISO4) may also surround a third photoelectric conversion region. The fourth pixel isolation structure (ISO4) may have a second width (W2).

[0055] The second pixel group (PG2) may be contacted on one side of the first pixel group (PG1). The second pixel group (PG2) may include fifth to eighth pixels (PX5-PX8). For example, the fifth to eighth pixels (PX5-PX8) may be arranged in a (2×2) matrix configuration. Each of the fifth to eighth pixels (PX5-PX8) may include a microlens (not shown) that focuses incident light onto a photoelectric conversion region. Each of the fifth to eighth pixels (PX5-PX8) may include a color filter (not shown) that selectively transmits light having a second wavelength range (e.g., 400 nm to 500 nm) (e.g., blue light). The fifth to eighth pixels (PX5-PX8) may detect light in the second wavelength range. For example, each of the fifth to eighth pixels (PX5-PX8) may include a photoelectric conversion region for detecting light in the second wavelength range.

[0056] Except that the second pixel group (PG2) detects light in a second wavelength range, the second pixel group (PG2) may be structurally similar to or identical to the first pixel group (PG1). Specifically, the wavelength range of light selectively transmitted by the color filter of the second pixel group (PG2) is different from the wavelength range of light selectively transmitted by the color filter of the first pixel group (PG1).

[0057] For example, except that the wavelength range detected by the fifth pixel (PX5) differs from the wavelength range detected by the first pixel (PX1), the fifth pixel (PX5) may be structurally similar to or identical to the first pixel (PX1). The fifth pixel (PX5) may include a fifth active region (ACT5) and a fifth pixel isolation structure (ISO5) surrounding the fifth active region (ACT5). The fifth active region (ACT5) may include a photoelectric conversion region (not shown). The fifth pixel isolation structure (ISO5) may also surround the fifth photoelectric conversion region. The fifth pixel isolation structure (ISO5) may have a first width (W1).

[0058] Except for the wavelength range detected by the sixth pixel (PX6), the sixth pixel (PX6) may be structurally similar to or identical to the second pixel (PX2). The sixth pixel (PX6) may include a sixth active region (ACT6) and a sixth pixel isolation structure (ISO6) surrounding the sixth active region (ACT6). The sixth active region (ACT6) may include a photoelectric conversion region (not shown). The sixth pixel isolation structure (ISO6) may also surround the sixth photoelectric conversion region. The sixth pixel isolation structure (ISO6) may have a second width (W2).

[0059] Aside from the wavelength range detected by the seventh pixel (PX7), the seventh pixel (PX7) may be structurally similar to or identical to the third pixel (PX3). The seventh pixel (PX7) may include a seventh active region (ACT7) and a seventh pixel isolation structure (ISO7) surrounding the seventh active region (ACT7). The seventh active region (ACT7) may include a photoelectric conversion region (not shown). The seventh pixel isolation structure (ISO7) may also surround the seventh photoelectric conversion region. The seventh pixel isolation structure (ISO7) may have a second width (W2).

[0060] Except for the wavelength range detected by the eighth pixel (PX8), the eighth pixel (PX8) may be structurally similar to or identical to the fourth pixel (PX4). The eighth pixel (PX8) may include an eighth active region (ACT8) and an eighth pixel isolation structure (ISO8) surrounding the eighth active region (ACT8). The eighth active region (ACT8) may include a photoelectric conversion region (not shown). The eighth pixel isolation structure (ISO8) may also surround the eighth photoelectric conversion region. The eighth pixel isolation structure (ISO8) may have a second width (W2).

[0061] The third pixel group (PG3) may be adjacent to the other side of the first pixel group (PG1). The third pixel group (PG3) may include the ninth to twelfth pixels (PX9-PX12). For example, the ninth to twelfth pixels (PX9-PX12) may be arranged in a (2×2) matrix configuration. Each of the ninth to twelfth pixels (PX9-PX12) may include a microlens (not shown) for focusing incident light onto a photoelectric conversion region. Each of the ninth to twelfth pixels (PX9-PX12) may include a color filter (not shown) for selectively transmitting light (e.g., red light) having a third wavelength range (e.g., 600 nm to 700 nm). The ninth to twelfth pixels (PX9-PX12) may detect light in the third wavelength range. For example, each of the ninth to twelfth pixels (PX9-PX12) may include a photoelectric conversion region for detecting light in the third wavelength range.

[0062] Except that the third pixel group (PG3) detects light in a third wavelength range, the third pixel group (PG3) may be structurally similar to or identical to the first pixel group (PG1). Except that the wavelength range of light selectively transmitted by the color filter of the third pixel group (PG3) differs from the wavelength range of light selectively transmitted by the color filter of the first pixel group (PG1), the third pixel group (PG3) may be structurally similar to or identical to the first pixel group (PG1).

[0063] In the following text, repeated descriptions will be omitted as much as possible.

[0064] For example, except for the wavelength range detected by the ninth pixel (PX9), the ninth pixel (PX9) may be structurally similar to or identical to the first pixel (PX1). Except for the wavelength range detected by the tenth pixel (PX10), the tenth pixel (PX10) may be structurally similar to or identical to the second pixel (PX2). Except for the wavelength range detected by the eleventh pixel (PX11), the eleventh pixel (PX11) may be structurally similar to or identical to the third pixel (PX3). Except for the wavelength range detected by the twelfth pixel (PX12), the twelfth pixel (PX12) may be structurally similar to or identical to the fourth pixel (PX4).

[0065] The fourth pixel group (PG4) is accessible to each of the second pixel group (PG2) and the third pixel group (PG3). The fourth pixel group (PG4) may include the thirteenth to sixteenth pixels (PX13-PX16). For example, the thirteenth to sixteenth pixels (PX13-PX16) may be arranged in a (2×2) matrix configuration. Each of the thirteenth to sixteenth pixels (PX13-PX16) may include a microlens (not shown) that focuses incident light onto a photoelectric conversion region. Each of the thirteenth to sixteenth pixels (PX13-PX16) may include a color filter (not shown) that selectively transmits light, for example, in a first wavelength range (e.g., green light) or light in a fourth wavelength range (e.g., 700 nm or longer) (e.g., infrared light). Each of the thirteenth to sixteenth pixels (PX13-PX16) may include a photoelectric conversion region.

[0066] In one embodiment where the fourth pixel group (PG4) includes a color filter that selectively transmits light in a first wavelength range, the fourth pixel group (PG4) may be structurally similar to or identical to the first pixel group (PG1). In another embodiment where the fourth pixel group (PG4) includes a color filter that selectively transmits light in a fourth wavelength range, the fourth pixel group (PG4) may be structurally similar to or identical to the first pixel group (PG1), except that it detects light in a fourth wavelength range.

[0067] For example, the thirteenth pixel (PX13) may be structurally similar to or identical to the first pixel (PX1). The fourteenth pixel (PX14) may be structurally similar to or identical to the second pixel (PX2). The fifteenth pixel (PX15) may be structurally similar to or identical to the third pixel (PX3). The sixteenth pixel (PX16) may be structurally similar to or identical to the fourth pixel (PX4).

[0068] Each of the first to sixteenth pixel isolation structures (ISO1-ISO16) can be part of a pixel isolation structure arranged along the boundary surface of a pixel (PX) in the pixel array 130.

[0069] Each of the first to fourth pixel groups (PG1-PG4) may include pixels with relatively low sensitivity (PX1, PX5, PX9, PX13) and pixels with relatively high sensitivity (PX2-PX4, PX6-PX8, PX10-PX12, PX14-PX16).

[0070] For example, the area (e.g., the area on a planar diagram) of each active region (ACT1, ACT5, ACT9, ACT13) serving as a light-receiving region where incident light can be incident, in each pixel (PX1, PX5, PX9, PX13) that includes a pixel isolation structure having a first width (W1) can be smaller than the area of ​​each active region (ACT2-ACT4, ACT6-ACT8, ACT10-ACT12, ACT14-ACT16) serving as a light-receiving region where incident light can be incident, in each pixel (PX2-PX4, PX6-PX8, PX10-PX12, PX14-PX16) that includes a pixel isolation structure having a second width (W2) can be smaller than the area of ​​each active region (ACT2-ACT4, ACT6-ACT8, ACT10-ACT12, ACT14-ACT16) serving as a light-receiving region where incident light can be incident, in each pixel (PX2-PX4, PX6-PX8, PX10-PX12, PX14-ACT16) that includes a light-receiving structure where incident light can be incident. As the size of the active region decreases, the sensitivity of each pixel can be reduced.

[0071] On the other hand, the area (e.g., the area on the plan view) of each pixel isolation structure (ISO1, ISO5, ISO9, ISO13) having a first width (W1) can be greater than the area of ​​each pixel isolation structure (ISO2-ISO4, ISO6-ISO8, ISO10-ISO12, ISO14-ISO16) having a second width (W2).

[0072] Here, the boundary of the area of ​​each of the first to sixteenth pixels (PX1-PX16) can refer to, for example, the boundary of an area equally divided by a (4×4) matrix, but due to manufacturing limitations or variations, some error may occur.

[0073] The fill factor of each pixel can be defined as the ratio of the effective light-receiving area to the cross-sectional area of ​​the entire pixel. The effective light-receiving area can refer to the area of ​​the active region. For example, in a pixel with a predetermined cross-sectional area, the fill factor can increase as the effective light-receiving area increases. The area of ​​the active region can refer to the area excluding the light-blocking area from the cross-sectional area of ​​the entire pixel. The blocking area can refer to, for example, the cross-sectional area of ​​a pixel isolation structure or a grid structure. As the fill factor increases, each pixel can detect more light. In addition, as the fill factor increases, more light can be collected, which improves the signal-to-noise ratio (SNR) of each pixel.

[0074] In one embodiment of the disclosed technology, the cross-sectional areas of the first to sixteenth pixels (PX1-PX16) may be similar to or the same as each other. The area of ​​the active region of the first pixel (PX1) is smaller than the area of ​​the active regions of the second to fourth pixels (PX2-PX4), and the area of ​​the pixel isolation structure of the first pixel (PX1) is larger than the area of ​​the pixel isolation structure of each of the second to fourth pixels (PX2-PX4), such that the fill factor of the first pixel (PX1) is smaller than the fill factor of each of the second to fourth pixels (PX2-PX4). The area of ​​the active region of the fifth pixel (PX5) is smaller than the area of ​​the active regions of the sixth to eighth pixels (PX6-PX8), and the area of ​​the pixel isolation structure of the fifth pixel (PX5) is larger than the area of ​​the pixel isolation structure of each of the sixth to eighth pixels (PX6-PX8), such that the fill factor of the fifth pixel (PX5) is smaller than the fill factor of each of the sixth to eighth pixels (PX6-PX8). The area of ​​the active region of the ninth pixel (PX9) is smaller than the area of ​​the active regions of the tenth to twelfth pixels (PX10-PX12), and the area of ​​the pixel isolation structure of the ninth pixel (PX9) is larger than the area of ​​the pixel isolation structure of each of the tenth to twelfth pixels (PX10-PX12), such that the fill factor of the ninth pixel (PX9) can be smaller than the fill factor of each of the tenth to twelfth pixels (PX10-PX12). The area of ​​the active region of the thirteenth pixel (PX13) is smaller than the area of ​​the active regions of the fourteenth to sixteenth pixels (PX14-PX16), and the area of ​​the pixel isolation structure of the thirteenth pixel (PX13) is larger than the area of ​​the pixel isolation structure of each of the fourteenth to sixteenth pixels (PX14-PX16), such that the fill factor of the thirteenth pixel (PX13) can be smaller than the fill factor of each of the fourteenth to sixteenth pixels (PX14-PX16).

[0075] Figure 4 This illustrates some implementation methods based on the disclosed technology. Figure 3 The image shows a cross-sectional view of an example pixel region intercepted by line A-A'.

[0076] Reference Figure 3 and Figure 4 The first cross section 40 may include a first microlens (ML1), a second microlens (ML2), a fifth microlens (ML5), a sixth microlens (ML6), a first color filter (CF1), a second color filter (CF2), a fifth color filter (CF5), a sixth color filter (CF6), a grid structure (GRD), an anti-reflective layer 470, and a semiconductor layer 400.

[0077] A first microlens (ML1) may be disposed on a first color filter (CF1). The first microlens (ML1) may collect incident light received from the outside and transmit the collected light to the first color filter (CF1). For example, the first microlens (ML1) may comprise a material such as a light-transmitting resin or a light-transmitting photoresist.

[0078] A second microlens (ML2) may be disposed on the second color filter (CF2). The second microlens (ML2) can collect incident light received from the outside and can transmit the collected light to the second color filter (CF2). The second microlens (ML2) may comprise the same material as the first microlens (ML1). In some implementations, the first color filter (CF1) and the second color filter (CF2) have the same color.

[0079] A fifth microlens (ML5) may be disposed on a fifth color filter (CF5). The fifth microlens (ML5) may collect incident light received from the outside and may transmit the collected light to the fifth color filter (CF5). The fifth microlens (ML5) may comprise the same material as the first microlens (ML1).

[0080] A sixth microlens (ML6) may be disposed on a sixth color filter (CF6). The sixth microlens (ML6) collects incident light received from the outside and transmits the collected light to the sixth color filter (CF6). The sixth microlens (ML6) may comprise the same material as the first microlens (ML1). In some implementations, the fifth color filter (CF5) and the sixth color filter (CF6) have the same color.

[0081] The first color filter (CF1) selectively transmits light within a first wavelength range from the incident light collected by the first microlens (ML1). The first color filter (CF1) may be disposed below the first microlens (ML1). The first color filter (CF1) may be disposed on the antireflective layer 470. The first color filter (CF1) may be disposed between the grid structures (GRD).

[0082] The second color filter (CF2) selectively transmits light within a first wavelength range from the incident light collected by the second microlens (ML2). The second color filter (CF2) may be disposed below the second microlens (ML2). The second color filter (CF2) may be disposed on the antireflective layer 470. The second color filter (CF2) may be disposed between the grid structures (GRD).

[0083] The fifth color filter (CF5) selectively transmits light in the second wavelength range from the incident light collected by the fifth microlens (ML5). The fifth color filter (CF5) may be positioned below the fifth microlens (ML5). The fifth color filter (CF5) may be positioned on the antireflective layer 470. The fifth color filter (CF5) may be positioned between the grid structures (GRD).

[0084] The sixth color filter (CF6) selectively transmits light in the second wavelength range from the incident light collected by the sixth microlens (ML6). The sixth color filter (CF6) may be positioned below the sixth microlens (ML6). The sixth color filter (CF6) may be arranged on the antireflective layer 470. The sixth color filter (CF6) may be arranged between the grid structure (GRD).

[0085] A grid structure (GRD) may be disposed on the antireflective layer 470. The grid structure (GRD) may be disposed at the boundary between two adjacent pixels (e.g., first pixel PX1 and second pixel PX2). For example, the grid structure (GRD) may be disposed at the boundary between two adjacent color filters (e.g., first color filter CF1 and second color filter CF2).

[0086] A grid structure (GRD) prevents incident light received from an external angle from striking adjacent pixels, thereby reducing crosstalk between adjacent pixels. The grid structure (GRD) may include a metallic material (e.g., tungsten). The grid structure (GRD) may include air regions (not shown). In one embodiment where the grid structure (GRD) includes air regions, the grid structure (GRD) may include air regions and a capping region defining the air regions. The capping region may be a region surrounding the air regions. The capping region may include a surface of the grid structure (GRD). The capping region may include a material with a refractive index lower than that of adjacent color filters (e.g., first color filter CF1). Based on another embodiment of the disclosed technology, the grid structure (GRD) may be formed to penetrate the antireflective layer 470. In one example, the grid structure (GRD) may penetrate the antireflective layer 470 and contact the pixel isolation structure.

[0087] To adjust the area of ​​the active region, which serves as the light-receiving region for light incident, using a grid structure (GRD), the GRD needs to include a material with relatively high absorptivity, such as a metal (e.g., tungsten) or a blocking metal (e.g., titanium or titanium nitride). However, compared to a GRD that includes an air region, the capping region surrounding the air region includes a material with low absorptivity and high reflectivity, making it difficult to adjust the area of ​​the active region using a grid structure (GRD) in the capping region. However, when adjusting the width (or cross-sectional area) of the pixel isolation structure (ISO1, ISO2, ISO5, ISO6, etc.), the area of ​​the active region can be designed differently for each pixel. In particular, because the areas of the active regions differ between pixels that detect light within the same wavelength range, embodiments of the disclosed technology can provide an image sensing device ranging from pixels with relatively low sensitivity to pixels with relatively high sensitivity, enabling the image sensing device to achieve high dynamic range (HDR). Furthermore, since the area of ​​the active region of each pixel is different by adjusting the width (or cross-sectional area) of the individual pixel isolation structure, the implementation of the grid structure (GRD) including materials with relatively high absorptivity can provide an image sensing device with high dynamic range (HDR).

[0088] An antireflective layer 470 may be disposed on the rear surface 401 of the semiconductor layer 400. The rear surface 401 may refer to the surface on which incident light on the semiconductor layer 400 is incident. The antireflective layer 470 may include one or more layers with different refractive indices. The antireflective layer 470 may include a material with high light transmittance so that light of a specific wavelength that has passed through the color filter (CF1, CF2, CF5, or CF6) can be easily diverted to the photoelectric conversion region. For example, the antireflective layer 470 may include silicon oxide, silicon nitride, hafnium nitride, etc.

[0089] The semiconductor layer 400 may include a first pixel isolation structure (ISO1), a second pixel isolation structure (ISO2), a fifth pixel isolation structure (ISO5), a sixth pixel isolation structure (ISO6), a first photoelectric conversion region (PD1), a second photoelectric conversion region (PD2), a fifth photoelectric conversion region (PD5), a sixth photoelectric conversion region (PD6), a first active region (ACT1), a second active region (ACT2), a fifth active region (ACT5), and a sixth active region (ACT6). The semiconductor layer 400 may include a rear surface 401 and a front surface 402. The front surface 402 of the semiconductor layer 400 may be a surface of the semiconductor layer 400 facing the rear surface 401 or opposite to the rear surface 401.

[0090] The first pixel isolation structure (ISO1) may be a structure within the first pixel (PX1) that contacts the boundary of the first pixel (PX1). The first pixel isolation structure (ISO1) may contact both sides of the first active region (ACT1). The first pixel isolation structure (ISO1) may include a first insulating layer 411 and a first conductive layer 412. The first insulating layer 411 may include an insulating material (e.g., silicon oxide, silicon nitride, etc.). The first conductive layer 412 may include a conductive material (e.g., polysilicon, doped polysilicon, etc.). The first pixel isolation structure (ISO1) may prevent light that has penetrated the antireflective layer 470 from incident on a pixel adjacent to the first pixel (PX1) (e.g., a second pixel PX2).

[0091] The second pixel isolation structure (ISO2) can be a structure within the second pixel (PX2) that contacts the boundary of the second pixel (PX2). The second pixel isolation structure (ISO2) can contact both sides of the second active region (ACT2). The second pixel isolation structure (ISO2) can include a second insulating layer 421 and a second conductive layer 422. The second insulating layer 421 can include an insulating material (e.g., silicon oxide, silicon nitride, etc.). The second conductive layer 422 can include a conductive material (e.g., polysilicon, doped polysilicon, etc.). The second pixel isolation structure (ISO2) can prevent light that has penetrated the anti-reflective layer 470 from incident on pixels adjacent to the second pixel (PX2) (e.g., the first pixel PX1, the fifth pixel PX5).

[0092] The second pixel isolation structure (ISO2) is accessible to the first pixel isolation structure (ISO1). The second insulating layer 421 is accessible to the first insulating layer 411. The second conductive layer 422 is accessible to the first conductive layer 412.

[0093] The fifth pixel isolation structure (ISO5) can be a structure within the fifth pixel (PX5) that contacts the boundary of the fifth pixel (PX5). The fifth pixel isolation structure (ISO5) can contact both sides of the fifth active region (ACT5). The fifth pixel isolation structure (ISO5) can include a fifth insulating layer 451 and a fifth conductive layer 452. The fifth insulating layer 451 can include an insulating material (e.g., silicon oxide, silicon nitride, etc.). The fifth conductive layer 452 can include a conductive material (e.g., polysilicon, doped polysilicon, etc.). The fifth pixel isolation structure (ISO5) can prevent light that has penetrated the anti-reflective layer 470 from incident on pixels adjacent to the fifth pixel (PX5) (e.g., the second pixel PX2, the sixth pixel PX6).

[0094] The sixth pixel isolation structure (ISO6) can be a structure within the sixth pixel (PX6) that contacts the boundary of the sixth pixel (PX6). The sixth pixel isolation structure (ISO6) can contact both sides of the sixth active region (ACT6). The sixth pixel isolation structure (ISO6) can include a sixth insulating layer 461 and a sixth conductive layer 462. The sixth insulating layer 461 can include an insulating material (e.g., silicon oxide, silicon nitride, etc.). The sixth conductive layer 462 can include a conductive material (e.g., polysilicon, doped polysilicon, etc.). The sixth pixel isolation structure (ISO6) can prevent light that has penetrated the anti-reflective layer 470 from incident on pixels adjacent to the sixth pixel (PX6) (e.g., the fifth pixel PX5).

[0095] The sixth pixel isolation structure (ISO6) is accessible to the fifth pixel isolation structure (ISO5). The sixth insulating layer 461 is accessible to the fifth insulating layer 451. The sixth conductive layer 462 is accessible to the fifth conductive layer 452.

[0096] The width of each of the first and fifth pixel isolation structures (ISO1, ISO5) can be a first width (W1). The width of each of the second and sixth pixel isolation structures (ISO2, ISO6) can be a second width (W2).

[0097] The first active region (ACT1) may surround the first photoelectric conversion region (PD1). The first active region (ACT1) may be a semiconductor region including impurities of a first conductivity type (e.g., P-type).

[0098] The second active region (ACT2) may surround the second photoelectric conversion region (PD2). The second active region (ACT2) may be a semiconductor region including impurities of the first conductivity type.

[0099] The fifth active region (ACT5) may surround the fifth photoelectric conversion region (PD5). The fifth active region (ACT5) may be a semiconductor region including impurities of the first conductivity type.

[0100] The sixth active region (ACT6) may surround the sixth photoelectric conversion region (PD6). The sixth active region (ACT6) may be a semiconductor region including impurities of the first conductivity type.

[0101] The first photoelectric conversion region (PD1) may be a region that generates photocharge in response to light that has passed through the first color filter (CF1). The first photoelectric conversion region (PD1) may be a semiconductor region that includes impurities of a second conductivity type (e.g., N-type).

[0102] The second photoelectric conversion region (PD2) may be a region that generates photocharge in response to light that has passed through the second color filter (CF2). The second photoelectric conversion region (PD2) may be a semiconductor region including impurities of a second conductivity type.

[0103] The fifth photoelectric conversion region (PD5) can be a region that generates photocharge in response to light that has passed through the fifth color filter (CF5). The fifth photoelectric conversion region (PD5) can be a semiconductor region including impurities of the second conductivity type.

[0104] The sixth photoelectric conversion region (PD) can be a region that generates photocharge in response to light that has passed through the sixth color filter (CF6). The sixth photoelectric conversion region (PD6) can be a semiconductor region that includes impurities of the second conductivity type.

[0105] Along Figure 3 The cross section of the structure cut by line A”-A”’ can appear to be substantially the same as the first cross section 40.

[0106] Figure 5 This demonstrates some implementation methods based on the disclosed technology. Figure 2 The circuit diagram shows a second embodiment of the pixel area.

[0107] Reference Figure 2 , Figure 3 and Figure 5 The pixel region (Q1) based on the implementation method may include first to fourth pixel groups (PG1-PG4). The first to fourth pixel groups (PG1-PG4) may be arranged in a (2×2) matrix configuration.

[0108] In the following text, we will omit as much as possible the use of... Figure 3 The repeated descriptions in the text will be removed, and the following description will focus on the characteristics that differ from those of the first embodiment. Figure 5 The second implementation method.

[0109] Each of the first to fourth pixels (PX1-PX4) in the first pixel group (PG1) may include a color filter that selectively transmits light in a first wavelength range. Each of the fifth to eighth pixels (PX5-PX8) in the second pixel group (PG2) may include a color filter that selectively transmits light in a second wavelength range. Each of the ninth to twelfth pixels (PX9-PX12) in the third pixel group (PG3) may include a color filter that selectively transmits light in a third wavelength range. Each of the thirteenth to sixteenth pixels (PX13-PX16) in the fourth pixel group (PG4) may include a color filter that selectively transmits light in a first wavelength range (or a fourth wavelength range).

[0110] The first pixel (PX1) may include a first active region (ACT1) and a first pixel isolation structure (ISO1) surrounding the first active region (ACT1). The first pixel isolation structure (ISO1) may be formed to extend from the boundary of the first pixel (PX1) to the interior of the first pixel (PX1) to a first width (W1). The first pixel isolation structure (ISO1) may be arranged along the boundary of the first pixel (PX1) to surround the first active region (ACT1).

[0111] The first pixel isolation structure (ISO1) may include a first protrusion (P1), a second protrusion (P2), a third protrusion (P3), and a fourth protrusion (P4). Each of the first to fourth protrusions (P1-P4) may extend into the interior of the first pixel (PX1). The width of each protrusion (P1-P4) is not limited to a specific range. The first protrusion (P1) and the second protrusion (P2) may extend in a direction facing each other. The third protrusion (P3) and the fourth protrusion (P4) may extend in a direction facing each other.

[0112] The first active region (ACT1) may include first to fourth photoelectric conversion regions (not shown), which are distinct from each other. The first to fourth photoelectric conversion regions may be arranged in a (2×2) matrix configuration. Protrusions may be arranged between each of the first and fourth photoelectric conversion regions. For example, a first protrusion (P1) may be located between the first and second photoelectric conversion regions. A second protrusion (P2) may be located between the third and fourth photoelectric conversion regions. A third protrusion (P3) may be located between the first and third photoelectric conversion regions. A fourth protrusion (P4) may be located between the second and fourth photoelectric conversion regions. The first to fourth protrusions (P1, P2, P3, P4) may be spaced apart from each other.

[0113] Each of the second to sixteenth pixel isolation structures (ISO2-ISO16) may include four different protrusions. Each of the second to sixteenth active regions (ACT2-ACT16) may also include four different photoelectric conversion regions. The photoelectric conversion regions may be spaced apart from each other and interspersed with protrusions.

[0114] Since the first active region (ACT1) is smaller than each of the second to fourth active regions (ACT2-ACT4), the sensitivity of the first pixel (PX1) can be lower than the sensitivity of each of the second to fourth pixels (PX2-PX4).

[0115] For the same reason, the sensitivity of the fifth pixel (PX5) can be lower than that of each of the sixth to eighth pixels (PX6-PX8), the sensitivity of the ninth pixel (PX9) can be lower than that of each of the tenth to twelfth pixels (PX10-PX12), and the sensitivity of the thirteenth pixel (PX13) can be lower than that of each of the fourteenth to sixteenth pixels (PX14-PX16).

[0116] Figure 6 This illustrates some implementation methods based on the disclosed technology. Figure 5 A cross-sectional view of an example pixel region intercepted by line B-B'.

[0117] Reference Figures 4 to 6 The second cross section 60 may include a first microlens (ML1), a second microlens (ML2), a fifth microlens (ML5), a sixth microlens (ML6), a first color filter (CF1), a second color filter (CF2), a fifth color filter (CF5), a sixth color filter (CF6), a grid structure (GRD), an anti-reflective layer 670, and a semiconductor layer 600.

[0118] In the following text, the ellipsis and Figure 4 Repeated description.

[0119] The protrusion (P) may be disposed at the center of the first active region (ACT1). The protrusion (P) may have a cross-section substantially the same as, but is not limited to, the pixel isolation structure. For example, the width of the protrusion (P) may differ from each of the first width (W1) and the second width (W2). Different photoelectric conversion regions (PDs) may be disposed within the first active region (ACT1) and the protrusion (P) may be interspersed therebetween.

[0120] The protrusion (P) may be located at the center of each of the second active region (ACT2), the fifth active region (ACT5), and the sixth active region (ACT6), and may have a cross-section substantially the same as, but is not limited to, the pixel isolation structure. Different photoelectric conversion regions (PDs) may also be arranged for each of the second active region, the fifth active region, and the sixth active region (ACT2, ACT5, ACT6) with protrusions (P) interspersed between them.

[0121] Anti-reflective layer 670 can be compared with reference Figure 4 The description of the anti-reflective layer 470 is essentially the same.

[0122] Along Figure 5 The cross section of the structure cut by line B”-B”’ can appear to be substantially the same as the second cross section 60.

[0123] Figure 7This demonstrates some implementation methods based on the disclosed technology. Figure 2 The circuit diagram of the third embodiment of the pixel region shown.

[0124] Reference Figure 2 , Figure 3 , Figure 5 and Figure 7 The pixel region (Q3) based on the implementation method may include first to fourth pixel groups (PG1-PG4). The first to fourth pixel groups (PG1-PG4) may be arranged in a (2×2) matrix configuration.

[0125] In the following text, we will omit as much as possible the use of... Figure 3 The repeated descriptions in the previous section will be removed, and the following description will focus on the characteristics that differ from those of the second embodiment. Figure 7 The third implementation method.

[0126] Each of the first to fourth pixels (PX1-PX4) in the first pixel group (PG1) may include a color filter that selectively transmits light in a first wavelength range. Each of the fifth to eighth pixels (PX5-PX8) in the second pixel group (PG2) may include a color filter that selectively transmits light in a second wavelength range. Each of the ninth to twelfth pixels (PX9-PX12) in the third pixel group (PG3) may include a color filter that selectively transmits light in a third wavelength range. Each of the thirteenth to sixteenth pixels (PX13-PX16) in the fourth pixel group (PG4) may include a color filter that selectively transmits light in a first wavelength range (or a fourth wavelength range).

[0127] The first pixel (PX1) may include a first active region (ACT1) and a first pixel isolation structure (ISO1) surrounding the first active region (ACT1). The first pixel isolation structure (ISO1) may be formed to extend from the boundary of the first pixel (PX1) to the interior of the first pixel (PX1) to a first width (W1). The first pixel isolation structure (ISO1) may be disposed along the boundary of the first pixel (PX1) to surround the first active region (ACT1).

[0128] The first pixel isolation structure (ISO1) may include a first protrusion and a second protrusion (P1, P2). Each of the first protrusion and the second protrusion (P1, P2) may extend into the interior of the first pixel (PX1). The width of each of the first protrusion and the second protrusion (P1, P2) is not limited to a specific range. The first protrusion and the second protrusion (P1, P2) may extend in a direction facing each other.

[0129] The first active region (ACT1) may include a first photoelectric conversion region and a second photoelectric conversion region (not shown) that are distinct from each other. A first protrusion and a second protrusion (P1, P2) may be disposed between the respective first photoelectric conversion region and the respective second photoelectric conversion region. The first protrusion and the second protrusion (P1, P2) may extend from the first pixel isolation structure (ISO1) toward each other in the space between the first photoelectric conversion region and the second photoelectric conversion region. The first protrusion and the second protrusion (P1, P2) may be spaced apart from each other.

[0130] Each of the second to sixteenth pixel isolation structures (ISO2-ISO16) may include two distinct protrusions. Each of the second to sixteenth active regions (ACT2-ACT16) may also include two distinct photoelectric conversion regions. The photoelectric conversion regions may be spaced apart from each other and interspersed with protrusions.

[0131] Along Figure 7 The cross section of the structure cut by line C-C' can appear to be substantially the same as the second cross section 60.

[0132] As is evident from the above description, some embodiments of the image sensing apparatus based on the disclosed technology enable pixels that detect light beams within the same wavelength range to have different sensitivities without the need for separate, complex circuitry, thereby achieving high dynamic range (HDR).

[0133] The implementation of the disclosed technology can provide various effects that can be directly or indirectly understood through the aforementioned patent documents.

[0134] Although several exemplary embodiments have been described, it should be understood that modifications and enhancements to the disclosed embodiments and other embodiments may be conceived based on the description and / or illustrations in this patent document.

[0135] Cross-reference and priority claims of related applications

[0136] This patent document claims priority and benefit to Korean Patent Application No. 10-2025-0026137, filed on February 27, 2025, the disclosure of which is incorporated herein by reference in its entirety as part of the disclosure of this patent document.

Claims

1. An image sensing device, the image sensing device comprising: The first pixel includes: A first photoelectric conversion region, which generates an electrical signal in response to the detection of light in a first wavelength range, and A first pixel isolation structure, the first pixel isolation structure surrounding the first photoelectric conversion region and having a first width; and The second pixel includes: A second photoelectric conversion region generates an electrical signal in response to the detection of light in the first wavelength range, and A second pixel isolation structure surrounds the second photoelectric conversion region and has a second width that is smaller than the first width.

2. The image sensing device according to claim 1, further comprising: A mesh structure is disposed on the first pixel isolation structure and the second pixel isolation structure along the boundary between the first pixel and the second pixel. The first pixel isolation structure and the second pixel isolation structure are in contact with each other.

3. The image sensing device according to claim 2, wherein, The grid structure includes air regions.

4. The image sensing device according to claim 2, wherein, The first pixel includes a first color filter that selectively transmits incident light within the first wavelength range; and The second pixel includes a second color filter that selectively transmits incident light in the first wavelength range. The mesh structure is disposed between the first color filter and the second color filter.

5. The image sensing device according to claim 1, further comprising: The third pixel, which includes: The third photoelectric conversion region generates an electrical signal in response to the detection of light in the second wavelength range, and A third pixel isolation structure, the third pixel isolation structure surrounding the third photoelectric conversion region and having the second width; and The fourth pixel includes: A fourth photoelectric conversion region, which generates an electrical signal in response to detecting light in the first wavelength range, and A fourth pixel isolation structure surrounds the fourth photoelectric conversion region and has the second width.

6. The image sensing device according to claim 5, wherein, The first pixel also includes: A fifth photoelectric conversion region, which generates an electrical signal in response to the detection of light in the first wavelength range; and A first protrusion is disposed between the first photoelectric conversion region and the fifth photoelectric conversion region and extends in a first direction from the first pixel isolation structure toward the center portion of the first pixel.

7. The image sensing device according to claim 6, wherein, The second pixel also includes: A sixth photoelectric conversion region, which generates an electrical signal in response to the detection of light in the second wavelength range; and The second protrusion is disposed between the second photoelectric conversion region and the sixth photoelectric conversion region and extends from the second pixel isolation structure toward the center portion of the second pixel.

8. The image sensing device according to claim 7, wherein, The first pixel also includes: A seventh photoelectric conversion region and an eighth photoelectric conversion region, wherein the seventh photoelectric conversion region and the eighth photoelectric conversion region generate an electrical signal in response to detecting light in the first wavelength range; A third protrusion extends from the second pixel isolation structure toward the center portion of the second pixel in a second direction opposite to the first direction, and is disposed between the first photoelectric conversion region and the seventh photoelectric conversion region; A fourth protrusion extends from the second pixel isolation structure toward the center portion of the second pixel in a third direction perpendicular to the first direction, and is disposed between the fifth photoelectric conversion region and the eighth photoelectric conversion region; and A fifth protrusion extends from the second pixel isolation structure toward the center portion of the second pixel in a second direction opposite to the third direction, and is disposed between the seventh photoelectric conversion region and the eighth photoelectric conversion region.

9. The image sensing device according to claim 5, wherein, The first pixel and the second pixel are in contact with each other; and The third pixel and the fourth pixel are in contact with each other.

10. The image sensing device according to claim 5, wherein, The first pixel is less sensitive to light than each of the second to fourth pixels.

11. An image sensing device, the image sensing device comprising: A first pixel group, comprising a first pixel and a second pixel, wherein the first pixel and the second pixel generate an electrical signal in response to detecting light within a first wavelength range. The first pixel includes a first pixel isolation structure surrounding a first active region that receives incident light within the first wavelength range; and The second pixel includes a second pixel isolation structure surrounding a second active region that receives incident light in the first wavelength range. The area of ​​the second pixel isolation structure is smaller than the area of ​​the first pixel isolation structure.

12. The image sensing device according to claim 11, wherein, The area of ​​the second active region is larger than the area of ​​the first active region.

13. The image sensing device according to claim 11, wherein, The fill factor of the second pixel is higher than that of the first pixel.

14. The image sensing device according to claim 11, wherein, The first pixel also includes: A first protrusion extends from the first pixel isolation structure toward the center of the first pixel in a first direction; and The second pixel also includes: The second protrusion extends from the second pixel isolation structure toward the center of the second pixel in the first direction.

15. The image sensing device according to claim 14, wherein, The first pixel also includes: A third protrusion extends in a second direction from the first pixel isolation structure toward the center of the second pixel; and The second pixel also includes: The second protrusion extends from the second pixel isolation structure toward the center of the second pixel in the second direction.

16. The image sensing apparatus according to claim 11, wherein, The first pixel group further includes a third pixel and a fourth pixel, which generate electrical signals in response to detecting light in the first wavelength range. The third pixel includes a third pixel isolation structure surrounding a third active region that receives incident light in the first wavelength range; and The fourth pixel includes a fourth pixel isolation structure surrounding a fourth active region that receives incident light in the first wavelength range. The area of ​​each of the third pixel isolation structure and the fourth pixel isolation structure is smaller than the area of ​​the first pixel isolation structure.

17. The image sensing device according to claim 16, wherein, The first pixel to the fourth pixel are arranged in a (2×2) matrix; The first pixel isolation structure is in contact with the second pixel isolation structure and the third pixel isolation structure; and The fourth pixel isolation structure is in contact with the second pixel isolation structure and the third pixel isolation structure.

18. The image sensing device according to claim 17, wherein, The area of ​​each of the third and fourth active regions is greater than the area of ​​the first active region.

19. The image sensing device according to claim 17, wherein, The fill factor of each of the third and fourth pixels is higher than the fill factor of the first pixel.

20. The image sensing device according to claim 17, further comprising: A second pixel group, comprising a fifth pixel and a sixth pixel, is in contact with the first pixel group. The fifth pixel and the sixth pixel generate electrical signals in response to the detection of light in a second wavelength range. The fifth pixel includes a fifth pixel isolation structure surrounding a fifth active region that receives incident light in the second wavelength range; and The sixth pixel includes a sixth pixel isolation structure surrounding a sixth active region that receives incident light in the second wavelength range. The area of ​​the sixth pixel isolation structure is smaller than the area of ​​the fifth pixel isolation structure.

21. The image sensing device according to claim 20, wherein, The area of ​​the sixth active region is greater than the area of ​​the fifth active region.

22. The image sensing apparatus according to claim 20, wherein, The fill factor of the sixth active region is higher than that of the fifth active region.

Images