Plasma generating device and semiconductor processing apparatus

Abstract

The application discloses a kind of plasma generating device and semiconductor process equipment, the disclosed plasma generating device is used to blow plasma to the surface of wafer located in semiconductor process equipment, the disclosed plasma generating device includes device body, first electrode and second electrode, the device body is provided with gas delivery passage, the first electrode and the second electrode are all arranged in the device body, the gas delivery passage is arranged around the first electrode, the second electrode is arranged around the gas delivery passage, the device body is provided with outlet, the outlet is communicated with the gas delivery passage, for blowing the plasma to the surface of wafer. The above scheme can solve the problem of poor wafer film uniformity when the semiconductor process equipment in related art is used for wafer processing.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more particularly to a plasma generating device and semiconductor process equipment. Background Technology

[0002] With the continuous advancement of integrated circuit (IC) manufacturing technology and the shrinking of feature sizes, increasingly stringent requirements are being placed on the performance of process equipment and process parameters. To ensure high-yield product output, the key lies in maintaining the uniformity and particle size of the thin film at a stable low level.

[0003] Lower reaction temperatures have become a key focus in the industry because they facilitate film formation reactions and improve process controllability and repeatability. To this end, the industry has explored various solutions, one of which involves introducing plasma into the process chamber of semiconductor processing equipment to activate the process gases (such as precursor and reactant gases) supplied to the chamber, thereby increasing the activity of the process gases and lowering the reaction temperature.

[0004] To deliver plasma into the process cavity, related technologies integrate a buffer chamber into the inner wall of the cavity. Rod-shaped electrodes are placed within the buffer chamber. The gas to be ionized is first delivered to the buffer chamber, where it is ionized by the rod-shaped electrodes before entering the process cavity. It then flows over the wafer surface to activate the process gas there, causing a thin film to form. However, the ionization of the gas in the buffer chamber by the rod-shaped electrodes is insufficient, leading to incomplete ionization of the gas entering the process cavity. This results in varying degrees of activation of the process gas on the wafer surface, affecting the uniformity of the film formation. Summary of the Invention

[0005] This invention discloses a plasma generating device and semiconductor processing equipment to solve the problem of poor wafer film uniformity in related semiconductor processing equipment during wafer processing.

[0006] To solve the above-mentioned technical problems, the present invention is implemented as follows: In a first aspect, this application discloses a plasma generating device for blowing plasma onto the surface of a wafer located in a semiconductor process equipment. The disclosed plasma generating device includes a device body, a first electrode, and a second electrode. The device body has a gas delivery channel. The first electrode and the second electrode are both disposed on the device body. The gas delivery channel is arranged around the first electrode, and the second electrode is arranged around the gas delivery channel. The device body has an outlet, which is connected to the gas delivery channel for blowing the plasma onto the surface of the wafer.

[0007] Secondly, this application also discloses a semiconductor process apparatus, which includes a process tube and the plasma generating device described in the first aspect, wherein at least a portion of the device body is located inside the process tube, and the outlet is used to blow the plasma onto the surface of the wafer.

[0008] The technical solution adopted in this invention can achieve the following technical effects: The plasma generating apparatus disclosed in this application has a first electrode and a second electrode both disposed on the apparatus body, and a gas delivery channel on the apparatus body surrounds the first electrode and the second electrode is disposed around the gas delivery channel. This increases the mapping area between the second electrode and the first electrode in the direction surrounding the gas delivery channel, thereby increasing the ionization excitation area between the second electrode and the first electrode. Consequently, the gas to be ionized entering the gas delivery channel is more fully ionized into plasma, resulting in a more uniform plasma delivery to the wafer surface through the outlet. This, in turn, results in a more uniform activation of the process gas on the wafer surface, thereby improving the uniformity of wafer film formation. Attached Figure Description

[0009] Figure 1 This is an overall cross-sectional view of the plasma generating device disclosed in an embodiment of the present invention. The arrows in the figure indicate the flow direction of the gas or plasma to be ionized. Figure 2 for Figure 1 In the cross-sectional view at AA, the arrows in the figure indicate the direction of flow of the gas or plasma to be ionized; Figure 3 This is a cross-sectional view of the plasma generating device disclosed in an embodiment of the present invention from another perspective; Figure 4 This is a schematic diagram showing the distribution of multiple outlets disclosed in an embodiment of the present invention; Figure 5 This is a schematic diagram of the overall structure of the semiconductor process equipment disclosed in an embodiment of the present invention; Figure 6 for Figure 5 Side sectional view at point B.

[0010] Explanation of reference numerals in the attached figures: A-wafer, 100 - Device body, 101 - Gas delivery channel, 102 - Outlet, 110 - Main body section, 120 - Bend section, 121 - Auxiliary air intake channel 200 - First electrode, 300 - Second electrode 400 - First auxiliary electrode, 500 - Second auxiliary electrode 600 - Process tube, 700 - Base, 710 - Exhaust port 800 - Insulation components, 900 - Furnace body. Detailed Implementation

[0011] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0012] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0013] Please refer to Figures 1 to 6 This invention discloses a plasma generating device for blowing plasma onto the surface of wafer A located in a semiconductor process equipment. The plasma can activate the process gas delivered to the surface of wafer A (the process gas is delivered to the process cavity of the semiconductor process equipment through other gas delivery devices), thereby generating a thin film on the wafer surface.

[0014] The disclosed plasma generating device includes a device body 100, a first electrode 200, and a second electrode 300. The device body 100 has a gas delivery channel 101, through which the gas to be ionized (which may be the same as or different from the process gas) can enter the gas delivery channel 101.

[0015] The first electrode 200 and the second electrode 300 are both disposed on the device body 100. The electrodes of the first electrode 200 and the second electrode 300 are opposite. For example, the polarity of the first electrode 200 can be positive and the polarity of the second electrode 300 can be negative. Of course, the polarity of the first electrode 200 can also be negative and the polarity of the second electrode 300 can be positive.

[0016] A gas delivery channel 101 is arranged around a first electrode 200, and a second electrode 300 is arranged around the gas delivery channel 101. The gas delivery channel 101 is located between the first electrode 200 and the second electrode 300, that is, the gas delivery channel 101 and the second electrode 300 sequentially surround the first electrode 200. After the first electrode 200 and the second electrode 300 are energized, the first electrode 200 and the second electrode 300 can ionize the gas to be ionized in the region of the gas delivery channel 101 opposite to the first electrode 200 and the second electrode 300 into plasma.

[0017] The device body 100 has an outlet 102, which is connected to the gas delivery channel 101. The outlet 102 is used to blow plasma onto the surface of wafer A.

[0018] When the plasma generator needs to blow plasma onto the surface of wafer A located in the semiconductor process equipment, both the first electrode 200 and the second electrode 300 are energized. The gas to be ionized enters the gas delivery channel 101 through the inlet. The gas to be ionized in the gas delivery channel 101 generates plasma under the ionization action of the first electrode 200 and the second electrode 300. The plasma is blown onto the surface of wafer A through the outlet 102.

[0019] The plasma generating device disclosed in this application embodiment can also be applied to the situation of blowing process gas onto the surface of wafer A located in semiconductor process equipment. When blowing process gas onto the surface of wafer A located in semiconductor process equipment, both the first electrode 200 and the second electrode 300 are in an unenergized state, and the process gas input into the gas delivery channel 101 will not be ionized. The process gas can be blown onto the surface of wafer A through the outlet 102.

[0020] The plasma generating apparatus disclosed in this application has a first electrode 200 and a second electrode 300 both disposed on the apparatus body 100, and a gas delivery channel 101 on the apparatus body 100 surrounds the first electrode 200 and the second electrode 300 surrounds the gas delivery channel 101. This increases the mapping area between the second electrode 300 and the first electrode 200 in the direction surrounding the gas delivery channel 101, thereby increasing the ionization excitation area between the second electrode 300 and the first electrode 200. Consequently, the gas to be ionized entering the gas delivery channel 101 is more fully ionized into plasma, resulting in a more uniform plasma delivery to the surface of wafer A through the outlet 102. This, in turn, results in a more uniform activation of the process gas on the surface of wafer A, thereby improving the uniformity of film formation on wafer A.

[0021] Specifically, the semiconductor process equipment may include a process tube 600 and a plasma generator. At least a portion of the equipment body 100 may be located within the process tube 600, and a process cavity is formed inside the process tube 600. Wafer A is processed within the process cavity. During processing, the semiconductor process equipment typically processes multiple wafers A simultaneously. The multiple wafers A may be spaced apart along the height of the process tube 600. To improve the uniformity of film formation among the multiple wafers A, optionally, there may be multiple outlets 102, which may be spaced apart along the height direction of the first electrode 200. The height direction of the first electrode 200 may be the same as the height direction of the process tube 600.

[0022] The plasma generating apparatus disclosed in this application provides multiple outlets 102 spaced apart along the height direction of the first electrode 200 in the apparatus body 100. This allows the plasma formed by ionization in the gas delivery channel 101 to be uniformly delivered to the surface of the multiple wafers A in the arrangement direction of the multiple wafers A. This results in a relatively uniform degree of activation of the process gas on the surface of the multiple wafers A, thereby improving the uniformity of film formation among the multiple wafers A.

[0023] Multiple outlets 102 can correspond one-to-one with multiple wafers A. Of course, one outlet 102 can also correspond to two or three wafers A, etc. This application does not impose specific limitations on this.

[0024] Optionally, in a cross-section perpendicular to the height direction of the first electrode 200, the cross-sectional shape of the gas delivery channel 101 and the cross-sectional shape of the second electrode 300 are both arc-shaped structures.

[0025] The plasma generating device disclosed in this application sets the cross-sectional shape of the gas delivery channel 101 and the second electrode 300 in the section perpendicular to the height direction of the first electrode 200 to an arc shape, making the structure of the gas delivery channel 101 and the second electrode 300 relatively simple.

[0026] Specifically, the center of the arc-shaped structure of the gas delivery channel 101 coincides with the center of the arc-shaped structure of the second electrode 300. The first electrode 200 can be located at the center of the arc-shaped structure of the gas delivery channel 101, so that the distance between any position of the first electrode 200 and the second electrode 300 is equal. This makes the degree of ionization of the gas to be ionized in the region opposite to the first electrode 200 and the second electrode 300 relatively uniform, which is beneficial to the uniformity of plasma distribution in the gas delivery channel 101.

[0027] Of course, in other embodiments, the cross-sectional shape of the gas delivery channel 101 and the cross-sectional shape of the second electrode 300 in the cross-section perpendicular to the height direction of the first electrode 200 can also be an elliptical structure, a square structure, etc. The embodiments of this application do not impose specific restrictions on the cross-sectional shape of the gas delivery channel 101 and the second electrode 300 in the cross-section perpendicular to the height direction of the first electrode 200.

[0028] To improve plasma delivery capacity and to ensure more thorough ionization of the gas to be ionized by the plasma generator, optionally, both ends of the arc-shaped structure formed by the gas delivery channel 101 and both ends of the arc-shaped structure formed by the second electrode 300 extend to both sides adjacent to the outlet 102. Because the arc-shaped structure formed by the gas delivery channel 101 extends to both sides adjacent to the outlet 102, the space of the gas delivery channel 101 is relatively large, thereby improving plasma delivery capacity. Because the arc-shaped structure formed by the second electrode 300 extends to both sides adjacent to the outlet 102, the second electrode 300 and the first electrode 200 can ionize the gas within the gas delivery channel 101 in the circumferential direction of the arc-shaped structure, thus ensuring more thorough ionization of the gas to be ionized by the plasma generator.

[0029] Specifically, the second electrode 300 can cover the gas delivery channel 101, thereby enabling the plasma generator to more fully ionize the gas to be ionized.

[0030] Optionally, the first electrode 200 can be a columnar structure. By setting the first electrode 200 as a columnar structure, the structure of the first electrode 200 is relatively simple. Moreover, the first electrode 200 can form a complete electrode excitation region between itself and the second electrode 300 in the circumferential direction of the arc-shaped structure of the second electrode 300, which is beneficial for the gas to be ionized to be ionized more fully and more uniformly in the gas delivery channel 101.

[0031] Specifically, the first electrode 200 can be a cylindrical structure, so that the distance between any position of the first electrode 200 and the second electrode 300 is equal, thereby making the ionization of the gas to be ionized in the electrode excitation region more uniform.

[0032] Optionally, the second electrode 300 can be a flexible component. When unfolded, the second electrode 300 can have a rectangular sheet structure. When the second electrode 300 is disposed on the device body 100, the second electrode 300 is bent into an arc-shaped structure, and the cylindrical first electrode 200 can be located at the center of the arc-shaped structure.

[0033] By setting the second electrode 300 to a rectangular sheet structure when unfolded, the second electrode 300 is bent into an arc-shaped structure when it is placed on the device body 100. This ensures that when the cylindrical first electrode 200 is located at the center of the arc-shaped structure, the mapping areas of the first electrode 200 and the second electrode 300 are consistent at different positions. This ensures that the ionization effect of the gas to be ionized is relatively consistent in different regions surrounding the first electrode 200.

[0034] Optionally, the first electrode 200 and the second electrode 300 can both be embedded in the device body 100, thereby making the installation of the first electrode 200 and the second electrode 300 more stable, which is also beneficial to the protection of the first electrode 200 and the second electrode 300, and also beneficial to the compactness of the plasma generating device.

[0035] Of course, the second electrode 300 can also be disposed on the outer surface of the device body 100. When the device body 100 is a ring structure, the first electrode 200 can also be located on the inner surface of the device body 100. The embodiments of this application do not impose specific restrictions on the arrangement of the first electrode 200 and the second electrode 300.

[0036] Optionally, the device body 100 may include a body portion 110 and a bending portion 120. A gas delivery channel 101 may be formed in the body portion 110. The bending portion 120 may have an auxiliary gas inlet channel 121 communicating with the gas delivery channel 101. The auxiliary gas inlet channel 121 may communicate with the inlet of the gas delivery channel 101, and the auxiliary gas inlet channel 121 may deliver the gas to be ionized into the gas delivery channel 101 through the inlet. The first electrode 200 and the second electrode 300 are both located in the body portion 110. The plasma generating device may further include a first auxiliary electrode 400 and a second auxiliary electrode 500. Both the first auxiliary electrode 400 and the second auxiliary electrode 500 may be located in the bending portion 120. The first auxiliary electrode 400 may be connected to the first electrode 200, and the second auxiliary electrode 500 may be connected to the second electrode 300. The first auxiliary electrode 400 and the first electrode 200 have the same polarity, and the second auxiliary electrode 500 and the second electrode 300 have the same polarity.

[0037] It should be noted that the semiconductor process equipment includes a process tube 600 and a base 700. The base 700 has an annular structure, and the opening of the process tube 600 is supported on the base 700. When the plasma generator is installed in the semiconductor process equipment, the body part 110 is installed inside the process tube 600. The body part 110 extends along the height direction of the process tube 600. The bent part 120 extends out from the opening of the process tube 600, bends to the side of the opening, and extends out of the semiconductor process equipment from the side wall of the base 700. The gas supply channel 101 is connected to a gas source outside the semiconductor process equipment through the auxiliary gas inlet channel 121. The first electrode 200 and the second electrode 300 are connected to a power supply device outside the semiconductor process equipment through the first auxiliary electrode 400 and the second auxiliary electrode 500, respectively.

[0038] The plasma generating apparatus disclosed in this application has a structure in which the apparatus body 100 includes a body portion 110 and a bending portion 120. When the plasma generating apparatus is installed in a semiconductor process equipment, the bending portion 120 can extend out of the semiconductor process equipment from the side wall of the base 700. This facilitates the introduction of a power supply device outside the semiconductor process equipment into the first electrode 200 and the second electrode 300 through the first auxiliary electrode 400 and the second auxiliary electrode 500, respectively, and the introduction of a gas source outside the semiconductor process equipment into the gas supply channel 101 through the auxiliary gas inlet channel 121. Moreover, the plasma generating apparatus can be installed on the base 700 through the bending portion 120, thereby enabling the installation of the plasma generating apparatus.

[0039] Optionally, both the first auxiliary electrode 400 and the second auxiliary electrode 500 can be embedded in the bending portion 120, thereby making the installation of the first auxiliary electrode 400 and the second auxiliary electrode 500 more stable, and also protecting the first auxiliary electrode 400 and the second auxiliary electrode 500, as well as contributing to the compactness of the overall structure of the plasma generator.

[0040] Optionally, both the first electrode 200 and the second electrode 300 can be flexible structures. By making both the first electrode 200 and the second electrode 300 flexible structures, the first electrode 200 and the second electrode 300 can adapt to the installation environment through deformation, thereby making the installation of the first electrode 200 and the second electrode 300 easier.

[0041] This application also discloses a semiconductor process apparatus, which includes a process tube 600 and a plasma generating device disclosed in the above embodiments. At least a portion of the device body 100 is located inside the process tube 600, and the outlet 102 is used to blow plasma onto the surface of wafer A. A process cavity is formed inside the process tube 600, and wafer A undergoes relevant processes inside the process cavity.

[0042] The semiconductor process equipment disclosed in this application, by setting up the plasma generating device disclosed in the above embodiments, makes the gas delivery channel 101 on the device body 100 surround the first electrode 200, and the second electrode 300 is arranged around the gas delivery channel 101. This increases the mapping area between the second electrode 300 and the first electrode 200 in the direction surrounding the gas delivery channel 101, thereby increasing the ionization excitation area between the second electrode 300 and the first electrode 200. As a result, the gas to be ionized entering the gas delivery channel 101 is more fully ionized into plasma, making the plasma blown to the surface of wafer A through the outlet 102 relatively uniform. This, in turn, makes the activation degree of the process gas on the surface of wafer A relatively uniform, thereby improving the uniformity of film formation on wafer A.

[0043] Optionally, the semiconductor process equipment may also include a base 700, which may be an annular structure. The port of the process tube 600 may be supported at the end of the base 700. The channel formed by the annular structure of the base 700 is opposite to the port of the process tube 600. The body portion 110 may be disposed inside the process tube 600. The bent portion 120 may extend out of the port of the process tube 600 and may extend out of the semiconductor process equipment from the side wall of the base 700.

[0044] Optionally, the semiconductor process equipment may also include a furnace body 900, which can cover the process tube 600, and the opening of the furnace body 900 can be supported at the end of the base 700. The furnace body 900 can heat and keep the process tube 600 warm, so that the temperature inside the process tube 600 can meet the process requirements of wafer A.

[0045] The crystal boat can carry wafer A from the base 700 to the process tube 600. In order to prevent excessive heat loss from the base 700 and cause uneven temperature distribution in the process tube 600, a heat insulation component 800 is provided on one side of the crystal boat located on the base 700. The side of the heat insulation component 800 opposite to the crystal boat has a process door, which is used to seal the base 700. The heat insulation component 800 can prevent excessive heat loss from the base 700 and cause uneven temperature distribution in the process tube 600.

[0046] Optionally, the base 700 is provided with an exhaust port 710, which can discharge waste gas from the semiconductor process equipment, thereby ensuring the stability of the gas pressure inside the semiconductor process equipment.

[0047] The above embodiments of the present invention focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0048] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A plasma generating apparatus for blowing plasma onto the surface of a wafer (A) located within a semiconductor process apparatus, characterized in that, The plasma generating device includes a device body (100), a first electrode (200), and a second electrode (300). The device body (100) has a gas delivery channel (101). The first electrode (200) and the second electrode (300) are both located on the device body (100). The gas delivery channel (101) surrounds the first electrode (200), and the second electrode (300) surrounds the gas delivery channel (101). The device body (100) has an outlet (102), which communicates with the gas delivery channel (101) and is used to blow the plasma onto the surface of the wafer (A).

2. The plasma generating device according to claim 1, characterized in that, There are multiple outlets (102), and the multiple outlets (102) are distributed at intervals along the height direction of the first electrode (200).

3. The plasma generating device according to claim 2, characterized in that, In a cross section perpendicular to the height direction of the first electrode (200), the cross-sectional shape of the gas delivery channel (101) and the cross-sectional shape of the second electrode (300) are both arc-shaped structures.

4. The plasma generating device according to claim 3, characterized in that, Both ends of the arc-shaped structure formed by the gas delivery channel (101) and both ends of the arc-shaped structure formed by the second electrode (300) extend to the sides adjacent to the outlet (102).

5. The plasma generating apparatus according to claim 3, characterized in that, The first electrode (200) has a columnar structure.

6. The plasma generating apparatus according to claim 1, characterized in that, The first electrode (200) and the second electrode (300) are both embedded in the device body (100).

7. The plasma generating apparatus according to claim 1, characterized in that, The device body (100) includes a body part (110) and a bending part (120). The gas supply channel (101) is opened in the body part (110). The bending part (120) is provided with an auxiliary air intake channel (121) communicating with the gas supply channel (101). The first electrode (200) and the second electrode (300) are both provided in the body part (110). The plasma generating device further includes a first auxiliary electrode (400) and a second auxiliary electrode (500), both of which are located on the bending portion (120). The first auxiliary electrode (400) is connected to the first electrode (200), and the second auxiliary electrode (500) is connected to the second electrode (300).

8. The plasma generating apparatus according to claim 7, characterized in that, The first auxiliary electrode (400) and the second auxiliary electrode (500) are both embedded in the bent portion (120).

9. The plasma generating device according to claim 1, characterized in that, Both the first electrode (200) and the second electrode (300) are flexible structures.

10. A semiconductor process apparatus, characterized in that, The device includes a process tube (600) and a plasma generating apparatus according to any one of claims 1 to 9, wherein at least a portion of the apparatus body (100) is located within the process tube (600), and the outlet (102) is used to blow the plasma onto the surface of the wafer (A).

Images