Wafer drying and pick-and-place method and semiconductor process equipment

Abstract

The application discloses a wafer drying taking and placing method and a semiconductor process equipment, and relates to the technical field of semiconductor manufacturing. The wafer drying taking and placing method comprises the following steps: determining a center position of a wafer after drying, determining an initial approaching point of a mechanical hand according to the center position, the initial approaching point being located below the wafer and outside the edge of the wafer; controlling the suction end of the mechanical hand to move to the initial approaching point, and making the suction end extend into a first area on the back of the wafer from the initial approaching point; adjusting the vertical distance between the suction end and the back of the wafer to a target distance, the first area being an area opposite to the edge area of the back of the wafer; making the suction end move in the direction close to the center position at the target distance from the first area to adsorb and discharge residual liquid attached to the back of the wafer; when the suction end moves to a second area, stopping the horizontal movement, and moving in the vertical direction to the center position to adsorb the wafer; and controlling the mechanical hand to move the adsorbed wafer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method for handling and placing wafers after drying, and semiconductor process equipment. Background Technology

[0002] In most semiconductor equipment, wafers typically require cleaning and drying operations, such as electroplating equipment in semiconductor process equipment. Taking electroplating equipment as an example, it includes an electroplating chamber and a spin rinse dryer (SRD chamber). After metal deposition is completed in the electroplating chamber, a large amount of electroplating solution remains on the front side of the wafer (i.e., the plated surface). To remove the electroplating solution, the wafer is then transferred to the SRD chamber for cleaning and spin drying. During spin drying, the wafer is placed face up on a support platform, and centrifugal force is used to remove most of the liquid droplets through high-speed rotation. Simultaneously, an air blowing device is used to sweep the wafer surface to accelerate liquid evaporation and achieve thorough drying.

[0003] However, during the spin-drying process, because the front side of the wafer is directly exposed and the centrifugal force is directed from the center to the edge, the liquid on the front side is more easily spun off. In contrast, the back side of the wafer is in contact with the support platform, and the centrifugal force at its center is minimal, making it prone to forming a "stagnant zone" for liquid. This results in cleaning solution or residual plating solution forming droplets between the center and edge areas of the back side of the wafer. When the wafer is subsequently removed from the SRD chamber by a robotic arm, the suction end of the robotic arm usually needs to vacuum-adhere the back side of the wafer for stable handling. At this time, the robotic arm is usually located directly below the wafer. When the suction end contacts and adsorbs the back side of the wafer, its movement disturbs the residual droplets in the center of the back side, or causes the droplets to fall directly onto the robotic arm directly below due to pressure. When the contaminated robotic arm subsequently handles other wafers in the plating equipment, the droplets (which may contain metal ion contaminants) attached to its surface are very likely to drip or come into contact with the wafer, thus contaminating the clean back side of the wafer, the process chamber environment, and even other components of the equipment. This cross-contamination seriously threatens product yield. At the same time, residual droplets may also corrode the precision robotic arm, affecting its long-term operational stability and positioning accuracy.

[0004] The above is just an example using electroplating equipment. In other semiconductor equipment that requires spin drying, there is also liquid on the back of the wafer after spin drying, which can contaminate the robotic arm and cause cross-contamination. Summary of the Invention

[0005] The purpose of this invention is to provide a method for handling and placing wafers after drying, as well as semiconductor process equipment, which can effectively solve the problem of residual liquid droplets on the back side of the wafer falling onto the robotic arm and contaminating the robotic arm and other components after drying, thereby improving product yield.

[0006] To achieve this objective, the present invention adopts the following technical solution: A method for handling and placing wafers after drying, the method comprising: The center position of the wafer after drying is determined, and the initial approach point of the robot arm is determined based on the center position, wherein the initial approach point is located below the wafer and outside the edge of the wafer; The robot arm's suction end is controlled to move to the initial approach point, and the suction end extends from the initial approach point into the first region on the back of the wafer. Before the suction end moves from the first region toward the center position, the vertical distance between the suction end and the back of the wafer is adjusted to the target distance. The first region is the region facing the edge region of the back of the wafer. The adsorption end is moved from the first region toward the center while maintaining the target distance, so as to adsorb and discharge the residual liquid adhering to the back of the wafer; When the adsorption end moves to the second region, it stops moving horizontally and moves vertically toward the center position to adsorb the wafer, wherein the second region is the region directly opposite the center region of the back side of the wafer; The robotic arm is controlled to move the adsorbed wafer.

[0007] As an optional method for handling the wafer after drying, adjusting the vertical distance between the adsorption end and the back surface of the wafer to the target distance includes: The adsorption end is brought into the first region from the initial approach point, and the vertical distance between the adsorption end and the back surface of the wafer is the target distance. The adsorption end is controlled to maintain the target distance from the back of the wafer, and moves from the first region toward the center position, so that the adsorption end absorbs and discharges the liquid attached between the edge region and the center region during the movement.

[0008] As an optional method for handling the wafer after drying, a third region is also provided on the back of the wafer, which is located between the first region and the second region; The picking and placing method further includes: Before the adsorption end enters the third region from the first region, the vertical distance between the adsorption end and the back surface of the wafer is set to the target distance.

[0009] As an optional method for handling the wafer after drying, before the adsorption end enters the third region from the first region, the vertical distance between the adsorption end and the back surface of the wafer is set as a target distance, specifically including: After entering the first region, the adsorption end is controlled to gradually approach the back of the wafer, and before reaching the boundary between the first region and the third region, the distance between the adsorption end and the back of the wafer reaches the target distance; wherein, the adsorption end entering the first region means that its vertical projection portion falls into the edge region, and at this time the distance between the adsorption end and the back of the wafer is greater than the target distance.

[0010] As an alternative method for handling the wafer after drying, the width of the robotic arm is smaller than the outer diameter of the adsorption end, and the adsorption end includes an adsorption hole. Under vacuum, the residual liquid on the back side of the wafer is discharged to the outside through the adsorption hole.

[0011] As an optional method for handling the wafer after drying, the target distance is 0.5mm to 1.5mm.

[0012] As an optional solution to the wafer handling method after drying, the handling method further includes: The adsorption end is controlled to move the adsorbed wafer to the blowing device, which is used to blow air onto the back of the wafer for drying.

[0013] As an alternative method for handling the wafer after drying, the blowing device is disposed on the frame of the process chamber to dry the back side of the wafer during the process of adsorbing the wafer at the adsorption end and removing it from the process chamber.

[0014] As an alternative method for handling the wafer after drying, the air blowing device is symmetrically installed on the upper and lower crossbeams of the frame to simultaneously blow air and dry the front and back sides of the wafer during the process of removing the wafer from the process chamber.

[0015] As an alternative method for handling the wafer after drying, during the process of adsorbing the wafer at the adsorption end and removing it from the process cavity, the blowing parameters of the blowing device are dynamically adjusted, wherein the blowing parameters include the blowing angle, airflow width, and purging range.

[0016] A semiconductor process apparatus, comprising: Robotic arms are used to pick up and place wafers; A controller, which has embedded program instructions, controls the robotic arm to perform the wafer drying pick-and-place method as described in any of the above schemes by executing the program instructions.

[0017] The beneficial effects of this invention are: The wafer handling method provided by this invention involves determining the center position of the dried wafer before the robotic arm picks it up. Based on this center position, the initial approach point of the robotic arm is determined. The robotic arm is then moved to this initial approach point, and its suction end extends into a first region on the back of the wafer. Before the suction end moves from the first region towards the center position, the vertical distance between the suction end and the back of the wafer is adjusted to a target distance. The suction end is then moved from the first region towards the center while maintaining the target distance to absorb and remove residual liquid adhering to the back of the wafer. When the suction end reaches a second region on the back of the wafer, it stops moving and absorbs the wafer. The robotic arm then moves the wafer to remove it. This wafer drying and handling method adds a preliminary step of "adsorption and discharge" of residual liquid on the back of the wafer before the robot's adsorption end moves to the second area on the back of the wafer for stable adsorption. By using the robot's own adsorption end as an active liquid removal tool, residual liquid is eliminated before the robot performs the stable picking action, fundamentally eliminating the possibility of droplets dripping onto the robot arm below due to being pressed or disturbed by the adsorption end.

[0018] The semiconductor process equipment provided by this invention enables the controller to control the robotic arm to perform the above-mentioned wafer drying and placement method by executing program instructions. This achieves the proactive removal of residual liquid before the robotic arm adsorbs the wafer, which not only effectively prevents cross-contamination and improves product yield, but also protects precision mechanical equipment and extends the maintenance cycle and service life of the semiconductor process equipment. Attached Figure Description

[0019] Figure 1 This is a flowchart of the wafer handling method after drying provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the back side of a wafer provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the state of the robotic arm moving to the initial approach point according to an embodiment of the present invention; Figure 4 This is a schematic diagram showing the state of the suction end of the robotic arm provided in this embodiment of the invention moving to the boundary between the first and third regions; Figure 5 This is a schematic diagram of the state of the robotic arm when its adsorption end moves to the third region, as provided in an embodiment of the present invention. Figure 6 This is a schematic diagram of the state of the robotic arm when its adsorption end moves to the second region, according to an embodiment of the present invention. Figure 7 This is a schematic diagram showing the state of the adsorption end of the robotic arm adsorbing the central region on the back side of the wafer, as provided in an embodiment of the present invention. Figure 8This is a schematic diagram showing the state of the wafer being dried by an air blowing device during the process of the robotic arm adsorbing the wafer and removing it from the process cavity, as provided in an embodiment of the present invention.

[0020] In the picture: 1. Wafer; 11. Back side of wafer; 111. Center position; 112. Edge region; 113. Center region; 2. Residual liquid; 3. Robotic arm; 31. Robotic hand; 32. Adsorption end; 4. Frame; 41. Upper crossbeam; 42. Lower crossbeam; 5. Air blowing device. Detailed Implementation

[0021] Embodiments of the present invention are described in detail below. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0022] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The terms "first position" and "second position" refer to two different positions.

[0023] Unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to fixed connections or detachable connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and connections within two components or interactions between two components. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances.

[0024] Unless otherwise expressly specified and limited, "above" or "below" a second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of a second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" of a second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0025] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0026] This embodiment provides a semiconductor process apparatus, including a front-end cavity, a process cavity, and a robotic arm. The front-end cavity is equipped with a wafer cassette for holding wafers. The process cavity is used to perform corresponding process operations on the wafers. The robotic arm is used to move wafers from the wafer cassette within the front-end cavity into the process cavity.

[0027] Taking electroplating equipment as an example, it includes an electroplating chamber and an SRD chamber. After metal deposition is completed in the electroplating chamber, a large amount of electroplating solution remains on the front side of the wafer (i.e., the plated surface). To remove the electroplating solution, the wafer is then transferred to the SRD chamber for cleaning and spin-drying. During spin-drying, the wafer is placed face up on a support platform, and centrifugal force is used to remove most of the droplets through high-speed rotation. At the same time, an air blowing device is used to sweep the wafer surface to accelerate liquid evaporation and achieve thorough drying. However, during the spin-drying process, because the front side of the wafer is directly exposed and the centrifugal force is directed from the center to the edge, the liquid on the front side is more easily ejected. In contrast, the back side of the wafer is in contact with the support platform, and the centrifugal force at its center is minimal, making it prone to forming a "stagnant zone" for liquid. This results in cleaning solution or residual electroplating solution forming droplets between the center and edge areas of the back side of the wafer. When the wafer is subsequently removed from the SRD chamber by a robotic arm, the suction end of the robotic arm usually needs to vacuum-adhere the back side of the wafer for stable handling.

[0028] At this point, the robotic arm is typically positioned directly beneath the wafer. When the adsorption end contacts and adsorbs the back side of the wafer, its movement disturbs any residual droplets on the back side, or presses down on the droplets due to contact, causing them to fall directly onto the robotic arm below. When the contaminated robotic arm subsequently handles other wafers in the electroplating equipment, droplets (potentially containing metal ion contaminants) adhering to its surface can easily drip or come into contact with the wafer, contaminating the clean back side of the wafer, the process chamber environment, and even other components of the equipment.

[0029] The above is just an example using electroplating equipment. In other semiconductor equipment that requires spin drying, there is also liquid on the back of the wafer after spin drying, which can contaminate the robotic arm and cause cross-contamination.

[0030] To address the aforementioned technical problems, this embodiment provides a wafer handling method after drying. The controller of the semiconductor process equipment is embedded with program instructions. The controller executes these instructions to control a robotic arm to perform the wafer handling method after drying, transferring the wafer from the process chamber to the front-end chamber. This method proactively removes residual liquid before the robotic arm picks up the wafer, effectively preventing cross-contamination, improving product yield, protecting precision machinery, and extending the maintenance cycle and lifespan of the semiconductor process equipment.

[0031] like Figures 1-8 As shown, the wafer drying post-processing method provided in this embodiment includes: S10. Determine the center position 111 of the dried wafer 1. Determine the initial approach point of the robot arm 3 based on the center position 111. The initial approach point is located below the wafer 1 and outside the edge of the wafer 1.

[0032] A camera is installed inside the process chamber. The camera takes pictures of wafer 1 and transmits them to the controller of the semiconductor process equipment. After receiving the pictures of wafer 1, the controller analyzes and calculates the coordinates of the center position 111 of wafer 1. Based on the calculated coordinates of the center position 111 of wafer 1 and preset parameters, the controller calculates a safe initial approach point. This initial approach point is located outside the edge of wafer 1, and its coordinates are set according to the following principles: the Z-axis (vertical direction) is located at a preset safe height below the back surface 11 of the wafer. The horizontal distance between the X-axis (horizontal direction) and the center position 111 is determined according to the radius of wafer 1 to ensure that the initial approach point is completely outside the projection range of wafer 1. The Y-axis can usually be aligned with the Y-coordinate of the center position 111 to simplify the movement path. After the calculation is completed, the controller first drives the robot arm 3 to move to the initial approach point. The purpose of this path planning is to avoid the robotic arm 3 from entering directly from below the wafer 1, thereby effectively preventing droplets remaining on the back side 11 of the wafer from dripping directly onto its robotic arm 31 or adsorption end 32 before the robotic arm 3 is in place, thus reducing the risk of contamination from the source.

[0033] S20. Control the suction end 32 of the robotic arm 3 to move to the initial approach point, and make the suction end 32 extend from the initial approach point into the first region of the back of the wafer. Before the suction end 32 moves from the first region toward the center position 111, adjust the vertical distance between the suction end 32 and the back of the wafer 11 to the target distance. The first region is the region facing the edge region 112 of the back of the wafer 11.

[0034] like Figure 2 As shown, the area below the back surface 11 of the wafer is divided into three regions: a first region, a second region, and a third region. The first region is the area facing the edge region 112 of the back surface 11, the second region is the area facing the center region 113 of the back surface 11, and the third region is the area between the first and second regions. It should be noted that in this embodiment, the area of ​​the center region 113 of the back surface 11 is set to match the area of ​​the adsorption end 32, forming a circular region with the center position 111 of the wafer 1 as its center and an area matching the area of ​​the adsorption end 32. The edge region 112 of the back surface 11 is an annular region with the center position 111 of the wafer 1 as its center. Generally, the edge region 112 is dry, while the center region 113 and the area between the center region 113 and the edge region 112 contain residual liquid 2.

[0035] In one embodiment, the target distance is 0.5 mm to 1.5 mm. The target distance should not be too large, as this may prevent the adsorption force of the adsorption end 32 from adsorbing and discharging the residual liquid 2. The target distance should also not be too small, as this may directly adsorb the wafer 1.

[0036] For example, the target distance is 1 mm.

[0037] In one embodiment, adjusting the vertical distance between the adsorption end 32 and the back surface 11 of the wafer to a target distance includes: moving the adsorption end 32 from an initial approach point into the first region, such that the vertical distance between the adsorption end 32 and the back surface 11 of the wafer is the target distance. Maintaining the target distance between the adsorption end 32 and the back surface 11 of the wafer, the adsorption end 32 moves from the first region towards the center position 111, so that during the movement, it draws away and discharges the liquid adhering between the edge region 112 and the center region 113.

[0038] In one embodiment, before the adsorption end 32 enters the third region from the first region, the vertical distance between the adsorption end 32 and the back surface 11 of the wafer is set to a target distance. Specifically, after entering the first region, the adsorption end 32 is controlled to gradually approach the back surface 11 of the wafer, and before reaching the boundary between the first and third regions, the distance between it and the back surface 11 of the wafer reaches the target distance; wherein, the adsorption end 32 entering the first region means that its vertical projection portion falls into the edge region 112, and at this time the distance between the adsorption end 32 and the back surface 11 of the wafer is greater than the target distance.

[0039] When the vertical distance between the adsorption end 32 and the back surface 11 of the wafer is the target distance, the adsorption end 32 has the best effect on adsorbing and discharging the residual liquid 2. In order to ensure that the residual liquid 2 between the edge region 112 and the center region 113 can be effectively adsorbed, the vertical distance between the adsorption end 32 and the back surface 11 of the wafer needs to be adjusted to the target distance before the adsorption end 32 extends into the third region.

[0040] In one embodiment, the width of the robotic arm 31 of the robotic arm 3 is smaller than the outer diameter of the adsorption end 32. The adsorption end 32 includes an adsorption hole, through which residual liquid 2 on the back side 11 of the wafer is discharged to the outside under vacuum. By making the width of the robotic arm 31 smaller than the outer diameter of the adsorption end 32, it is ensured that the robotic arm 31 itself can always remain within the projection protection range of the adsorption end 32 during the movement and liquid discharge process, minimizing contact with the edge of the wafer 1 or other possible droplets, and further reducing the risk of contamination.

[0041] S30, the adsorption end 32 is moved from the first region toward the center position 111 while maintaining the target distance, so as to adsorb and discharge the residual liquid 2 attached to the back side 11 of the wafer.

[0042] At this time, the adsorption end 32 moves horizontally from the first region toward the center position 111 in the horizontal direction. During the movement, it passes through the third region, adsorbs and discharges the residual liquid 2 attached to the third region.

[0043] In one embodiment, the adsorption end 32 is controlled to maintain a target distance from the back surface 11 of the wafer and moves from the boundary line between the first region and the third region toward the center position 111, so that the adsorption end 32 absorbs and discharges the liquid attached between the edge region 112 and the center region 113 during the movement.

[0044] The adsorption force generated by the adsorption end 32 on the area between the edge region 112 and the central region 113 can partially cover and act on the adjacent edge region 112 and the central region 113, thus also adsorbing and removing any small amount of liquid that may remain on the surface of these two areas.

[0045] Furthermore, when the adsorption end 32 moves to face the third region, the adsorption end 32 is controlled to rotate one revolution around the center position 111 to adsorb and discharge the residual liquid 2 in the entire annular region of the third region. Then, the adsorption end 32 is controlled to move horizontally to the second region.

[0046] For example, the controller calculates the trajectory path of the adsorption end 32 in a circular motion around the center position 111 based on the coordinates of the center position 111 of the wafer 1 and the current position coordinates of the adsorption end 32. Then the controller sends coordinated motion commands to multiple joint actuators of the robot arm 3, driving each joint axis to move along the predetermined trajectory, thereby causing the adsorption end 32 to rotate precisely around the center position 111 once.

[0047] The above process is based on the premise that the diameter of the adsorption end 32 is greater than or equal to the annular width of the third region. If the diameter of the adsorption end 32 is less than the annular width, the third region needs to be adsorbed in stages to ensure complete coverage. For example, when the annular width of the third region is twice the diameter of the adsorption end 32, the following steps can be performed: When the adsorption end 32 just enters the third region, the horizontal movement is stopped for the first time, and it is controlled to rotate around the center position 111 once to complete the adsorption of the first annular region; then the adsorption end 32 is controlled to continue to move horizontally until it reaches the boundary between the third region and the second region; the horizontal movement is stopped for the second time, and the adsorption end 32 is controlled to rotate around the center position 111 once again to complete the adsorption of the remaining annular region.

[0048] S40. When the adsorption end 32 moves to the second region, it stops moving horizontally and moves vertically toward the center position 111 to adsorb the wafer 1.

[0049] The adsorption end 32 moves to the second region, that is, the projection of the adsorption end 32 coincides with the central region 113 of the back side of the wafer 11. At this time, the horizontal movement can be stopped, and the adsorption end 32 is controlled to move closer to the center position 111 to adsorb the wafer 1.

[0050] S50, control the robotic arm 3 to move the adsorbed wafer 1.

[0051] Once the adsorption end 32 has stably adsorbed the wafer 1, the robot arm 3 is controlled to move the wafer 1 out of the process cavity.

[0052] S60, the adsorption end 32 is controlled to move the adsorbed wafer 1 to the blowing device 5, and the blowing device 5 is used to blow air to the back side 11 of the wafer for drying.

[0053] Specifically, the air blowing device 5 is installed on the frame 4 of the process cavity to dry the back side 11 of the wafer during the process of the robot arm 3 picking up the wafer 1 and removing it from the process cavity.

[0054] This design does not require any changes to the cavity structure of the process chamber. Simply add an air blowing device 5 to the frame 4 of the process chamber. This allows for secondary drying of the back side 11 of the wafer during the process when the robotic arm 3 moves the wafer 1 out of the process chamber, thus preventing incomplete adsorption at the adsorption end 32.

[0055] Furthermore, the air blowing device 5 is symmetrically installed on the upper crossbeam 41 and lower crossbeam 42 of the frame 4 to simultaneously blow air to dry the front and back sides of the wafer 1 during the process of removing the wafer 1 from the process cavity.

[0056] For example, the blowing device 5 includes a blowing nozzle and an air inlet pipe. The air inlet pipe is connected to an inert gas source. The inert gas in the inert gas source is supplied to the blowing nozzle through the air inlet pipe. The inert gas can be nitrogen.

[0057] In one embodiment, during the process of the robotic arm 3 adsorbing the wafer 1 and removing it from the process cavity, the blowing parameters of the blowing device 5 are dynamically adjusted, wherein the blowing parameters include the blowing angle, the airflow width, and the blowing range.

[0058] For example, the blowing nozzles are driven by a micro stepper motor to change the blowing angle. For instance, for wafers 1 of different sizes, the blowing angle of the blowing nozzles can be adjusted to change the blowing width and sweeping range. Alternatively, by arranging an array of blowing nozzles, different numbers of blowing nozzles can be selectively activated to change the sweeping range of the airflow, ensuring that there is no residual liquid 2 on the surface of wafer 1, thus achieving precise and energy-saving sweeping.

[0059] The above description is only a preferred embodiment of the present invention. For those skilled in the art, there will be changes in the specific implementation and application scope based on the ideas of the present invention. The content of this specification should not be construed as a limitation of the present invention.

Claims

1. A method for handling and placing wafers after drying, characterized in that, The picking and placing method includes: Determine the center position (111) of the dried wafer (1), and determine the initial approach point of the robot (3) based on the center position (111), wherein the initial approach point is located below the wafer (1) and outside the edge of the wafer (1); Control the suction end (32) of the robotic arm (3) to move to the initial approach point, and make the suction end (32) extend from the initial approach point into the first region of the back of the wafer, wherein, before the suction end (32) moves from the first region toward the center position (111), the vertical distance between the suction end (32) and the back of the wafer (11) is adjusted to the target distance, and the first region is the region facing the edge region (112) of the back of the wafer (11); The adsorption end (32) is moved from the first region toward the center position (111) while maintaining the target distance, so as to adsorb and discharge the residual liquid (2) attached to the back side (11) of the wafer; When the adsorption end (32) moves to the second region, it stops moving horizontally and moves vertically toward the center position (111) to adsorb the wafer (1), wherein the second region is the region facing the center region (113) of the back side (11) of the wafer; The robotic arm (3) is controlled to move the adsorbed wafer (1).

2. The wafer handling method after drying according to claim 1, characterized in that, Adjusting the vertical distance between the adsorption end (32) and the back surface (11) of the wafer to the target distance includes: Before the adsorption end (32) enters the first region from the initial approach point, the vertical distance between the adsorption end (32) and the back surface (11) of the wafer is set as the target distance; The adsorption end (32) is controlled to maintain the target distance from the back surface of the wafer (11), and moves from the first region toward the center position (111), so that the adsorption end (32) absorbs and discharges the liquid attached between the edge region (112) and the center region (113) during the movement.

3. The wafer handling method after drying according to claim 1, characterized in that, The back side of the wafer is further provided with a third region, which is located between the first region and the second region; The picking and placing method further includes: Before the adsorption end (32) enters the third region from the first region, the vertical distance between the adsorption end (32) and the back surface (11) of the wafer is set to the target distance.

4. The wafer handling method after drying according to claim 3, characterized in that, Before the adsorption end (32) enters the third region from the first region, the vertical distance between the adsorption end (32) and the back surface (11) of the wafer is set as the target distance, specifically including: After entering the first region, the adsorption end (32) is controlled to gradually approach the back surface of the wafer (11), and before reaching the boundary between the first region and the third region, the distance between the adsorption end (32) and the back surface of the wafer (11) reaches the target distance; wherein, the adsorption end (32) entering the first region means that its vertical projection part falls into the edge region (112), and at this time the distance between the adsorption end (32) and the back surface of the wafer (11) is greater than the target distance.

5. The method for handling and placing wafers after drying according to claim 1, characterized in that, The width of the robotic arm (31) of the robotic hand (3) is smaller than the outer diameter of the adsorption end (32). The adsorption end (32) includes an adsorption hole. Under vacuum, the residual liquid (2) on the back side (11) of the wafer is discharged to the outside through the adsorption hole.

6. The wafer handling method after drying according to claim 1, characterized in that, The target distance is 0.5mm to 1.5mm.

7. The method for handling and placing wafers after drying according to claim 1, characterized in that, The picking and placing method further includes: The adsorption end (32) is controlled to move the adsorbed wafer (1) to the blowing device (5), which is used to blow air onto the back side (11) of the wafer for drying.

8. The wafer handling method after drying according to claim 7, characterized in that, The blowing device (5) is mounted on the frame (4) of the process chamber to dry the back side (11) of the wafer (1) during the process of the wafer (1) being adsorbed at the adsorption end (32) and removed from the process chamber.

9. The method for handling and placing wafers after drying according to claim 8, characterized in that, The air blowing device (5) is symmetrically installed on the upper crossbeam (41) and lower crossbeam (42) of the frame (4) to simultaneously blow air to dry the front and back sides of the wafer (1) during the process of the wafer (1) being removed from the process cavity.

10. The wafer handling method after drying according to claim 8, characterized in that, During the process of adsorbing the wafer (1) at the adsorption end (32) and removing it from the process cavity, the blowing parameters of the blowing device (5) are dynamically adjusted, wherein the blowing parameters include the blowing angle, airflow width and blowing range.

11. A semiconductor process apparatus, characterized in that, include: A robotic arm (3) is used to pick up and place wafers (1); A controller, which has embedded program instructions, executes the program instructions to control the robotic arm (3) to perform the wafer drying and placement method as described in any one of claims 1-10.

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