Method for manufacturing reinforced tube and direct drive gallium nitride structure

Abstract

This application provides a method for fabricating a booster transistor and a direct-drive gallium nitride (GaN) structure, relating to the field of semiconductor technology. The fabrication method includes: providing a carrier substrate; placing the booster transistor on the carrier substrate and forming at least two conductive elements on the first surface of the booster transistor; encapsulating the booster transistor and each conductive element with a molding compound to form a first encapsulation layer; processing the first encapsulation layer to expose each conductive element, and forming an electrical connection layer corresponding to each conductive element in the first encapsulation layer; removing the carrier substrate and connecting the first and second surfaces on both sides of the first encapsulation layer through wiring of the conductive elements in the booster transistor. Through the fabrication process provided in this application, the conductive elements of the booster transistor, such as the gate (G), drain (D), and source (S), are rearranged on the back and front sides of the chip, thus changing the original electrode distribution and forming a new booster transistor. This eliminates the need for a DBC substrate, reducing packaging difficulty and cost, and solving the problems existing in the conventional direct-drive GaN structure packaging.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to a method for fabricating an enhancement transistor and a direct-drive gallium nitride structure. Background Technology

[0002] Gallium nitride (GaN) power devices have become key switching elements in high-frequency, high-efficiency power systems due to their advantages such as high electron saturation velocity, high critical electric field, and low conduction loss. However, GaN high electron mobility transistors (HEMTs) generally adopt a depletion-mode (D-mode) structure, meaning they conduct at zero gate voltage, which is not directly compatible with standard CMOS / TTL drive logic. Therefore, enhancement-mode switches need to be constructed through cascading.

[0003] In related technologies, traditional structures include two types: common source / common gate and direct drive. The direct drive structure uses a driver and dissipative diode packaged together to form a direct drive device. The driver integrates an LD enhancement diode and a driver module, leading out multiple electrodes, which are then connected via traditional packaging and dissipative diodes.

[0004] However, the aforementioned driver integrates the enhancement transistor and the driver module, resulting in very high complexity in the overall integrated driver design and manufacturing. Furthermore, the foundry perimeter is long, and the driver area is much larger than other transistors, which places higher demands on the packaging. Summary of the Invention

[0005] The purpose of this application is to provide a method for fabricating an enhancement transistor and a direct-drive gallium nitride structure to address the shortcomings of the prior art, thereby solving the technical problems existing in the prior art.

[0006] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows: In a first aspect, embodiments of this application provide a method for preparing a reinforced tube, the method comprising: Provide carrier board; The reinforcing tube is placed on the carrier plate, and at least two polar conductive elements are formed on the first surface of the reinforcing tube; The reinforcing tube and each conductive component are encapsulated with a molding compound to form a first encapsulation layer; The first encapsulation layer is processed to expose each conductive element, and an electrical connection layer corresponding to each conductive element is formed in the first encapsulation layer. Remove the carrier plate and connect the first and second surfaces on both sides of the first encapsulation layer through the wiring of the conductive element in the reinforcing tube.

[0007] Optionally, the reinforcing tube has a vertical structure; The step of placing the reinforcing tube on the carrier plate and forming at least two conductive elements on the first surface of the reinforcing tube includes: The enhancement tube is placed on the carrier plate, and a gate conductor and a source conductor are formed on the first surface.

[0008] Optionally, the process of treating the first encapsulation layer to expose each conductive element and forming an electrical connection layer corresponding to each conductive element in the first encapsulation layer includes: The first encapsulation layer is processed by grinding to expose each electrode conductive element, and an electrical connection layer corresponding to the gate conductive element and an electrical connection layer corresponding to the source conductive element are formed in the first encapsulation layer.

[0009] Optionally, removing the carrier plate and connecting the first and second surfaces on both sides of the first encapsulation layer through wiring of the conductive element in the reinforcing tube includes: Remove the carrier plate; One end of the gate conductor is guided to the second surface through a through-hole in the first encapsulation layer; A metal layer is laid on the second surface to form the drain electrical connection layer of the reinforcing tube.

[0010] Optionally, removing the carrier plate and connecting the first and second surfaces on both sides of the first encapsulation layer through wiring of the conductive element in the reinforcing tube includes: Remove the carrier plate; A metal layer is laid on the second surface to form the drain electrical connection layer of the reinforcing tube; The drain electrical connection layer is extended to the first surface through the through-hole of the first encapsulation layer.

[0011] Optionally, the reinforcing tube has a horizontal structure; The step of placing the reinforcing tube on the carrier plate and forming at least two conductive elements on the first surface of the reinforcing tube includes: A gate conductor, a drain conductor, and a source conductor are formed on the first surface.

[0012] Optionally, the process of treating the first encapsulation layer to expose each conductive element and forming an electrical connection layer corresponding to each conductive element in the first encapsulation layer includes: The first encapsulation layer is processed by grinding to expose each conductive element, and an electrical connection layer corresponding to the gate conductive element, the drain conductive element, and the source conductive element is formed in the first encapsulation layer.

[0013] Optionally, removing the carrier plate and connecting the first and second surfaces on both sides of the first encapsulation layer through wiring of the conductive element in the reinforcing tube includes: The source electrode is guided to the second surface through a through-hole in the first encapsulation layer and one end of the electrode.

[0014] Secondly, embodiments of this application also provide a direct-drive gallium nitride structure, the direct-drive gallium nitride structure comprising: a driver, a power supply, and the enhancement transistor prepared above; The control terminal of the driving device is connected to the gate of the power dissipation transistor and the gate of the enhancement transistor, respectively. The source of the power dissipation diode is connected to the drain of the power enhancement diode, the drain of the power dissipation diode is connected to the output terminal, and the source of the power enhancement diode is connected to the ground terminal.

[0015] The beneficial effects of this application are: This application provides a method for fabricating a boost transistor and a direct-drive gallium nitride structure. Through the fabrication process provided in this application, the conductive components of the boost transistor, such as the gate (G), drain (D), and source (S), are rearranged on the back and surface of the chip, thereby changing the original electrode distribution and forming a new boost transistor. This eliminates the need for a DBC substrate, reduces packaging difficulty and cost, and solves the problems existing in the traditional direct-drive gallium nitride structure packaging.

[0016] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the first conventional direct-drive gallium nitride structure package. Figure 2 This is a schematic diagram of the packaging for the second type of conventional direct-drive gallium nitride structure; Figure 3 This is a schematic diagram of the packaging for the third type of traditional direct-drive gallium nitride structure; Figure 4 A schematic flowchart illustrating a method for preparing a reinforced tube according to an embodiment of this application; Figure 5 A schematic diagram showing the distribution of the three poles reinforcing the vertical structure; Figure 6 A schematic diagram of a manufacturing process for a vertically structured reinforcing tube provided in an embodiment of this application; Figure 7A schematic diagram showing the distribution of the three poles reinforcing the horizontal structure; Figure 8 This is a schematic diagram of a manufacturing process for a horizontally structured reinforcing tube provided in an embodiment of this application. Figure 9 A schematic flowchart illustrating another method for preparing a reinforced tube according to an embodiment of this application; Figure 10 A schematic flowchart illustrating another method for preparing a reinforced tube according to an embodiment of this application; Figure 11 A schematic diagram of another manufacturing process for the vertically structured reinforcing tube provided in the embodiments of this application; Figure 12 A schematic diagram of the packaging structure of the driver, power supply, and the new reinforced tube formed after the above packaging, provided in the embodiments of this application; Figure 13 A circuit diagram of another direct-drive gallium nitride structure provided in this application. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0020] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0021] First, the background technology involved in this application will be introduced.

[0022] refer to Figure 1 The diagram shown is a schematic of the first type of conventional direct-drive gallium nitride (GaN) structure packaging. Figure 1 As shown, the traditional direct-drive gallium nitride structure integrates the driver, the horizontally structured enhancement transistor, and the power dissipation transistor into one unit. The horizontally structured enhancement transistor refers to a transistor where the gate (G), source (S), and drain (D) are all on the same surface, resulting in a large structure size, high design and manufacturing costs. Furthermore, this structure requires multiple wire bonding operations to form electrical connections, introducing parasitic inductance and affecting application characteristics.

[0023] refer to Figure 2 The diagram shown is a schematic of the packaging of the second type of traditional direct-drive gallium nitride structure. Figure 2 As shown, the traditional direct-drive gallium nitride structure integrates the driver, vertical structure enhancement transistor, DBC, and power supply into a single package. The vertical structure enhancement transistor has its gate (G) and source (S) on the surface and its drain (D) on the back side.

[0024] Among them, the DBC substrate has a high cost, resulting in high design and manufacturing costs.

[0025] Secondly, the traditional structure uses four chips to be packaged together, which results in a long packaging cycle and high packaging costs.

[0026] refer to Figure 3 The diagram shown is a schematic of the packaging for the third type of traditional direct-drive gallium nitride structure. Figure 3 As shown, the traditional direct-drive gallium nitride structure uses a driver module and a power supply in a single package. The driver module is an integrated vertical structure enhancement tube and driver, with multiple electrodes led out. It is then connected to the power supply through a traditional package. This results in very high difficulty in the overall integrated driver design and manufacturing, as well as a long foundry perimeter. The area of ​​the driver is much larger than that of other chips, which places higher demands on the package type.

[0027] To address the aforementioned issues, this application provides a method for fabricating a boost transistor. By utilizing advanced chip manufacturing or packaging processes, the conductive components of the boost transistor, such as the gate (G), drain (D), and source (S), are rearranged on the back and surface of the chip. This alters the original electrode distribution, forming a new boost transistor. This method eliminates the need for a DBC substrate, reduces packaging difficulty and costs, and solves the problems associated with traditional direct-drive gallium nitride (GaN) structure packaging.

[0028] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0029] Please see Figure 4 , Figure 4 A method for preparing a reinforced tube provided in this application embodiment includes: S101, Provide carrier board.

[0030] S102. Place the reinforcing tube on the carrier plate and form at least two conductive elements on the first surface of the reinforcing tube.

[0031] The carrier plate serves as a temporary substrate, providing support for the subsequent encapsulation of the reinforcing tube. The reinforcing tube can be fixed to the carrier plate using adhesives (such as temporary bonding films).

[0032] Optionally, the specific materials of the carrier plate and adhesive are not limited in this application embodiment, as long as the carrier plate has a certain strength and can be used in plastic encapsulation, and the adhesive can fix the reinforcing tube.

[0033] The reinforcing tube can be a vertical or horizontal structure. (Reference) Figure 5 As shown, when the enhancement transistor has a vertical structure, its three electrodes are distributed on different surfaces. The source (S) and gate (G) are located on the same surface (also called the surface), while the drain (D) is located on another surface (also called the back side). Therefore, referring to... Figure 6 As shown, after placing the reinforcing tube on the carrier plate, metal bumps or solder balls (i.e., ...) can be fabricated on the first surface of the reinforcing tube by ball mounting. Figure 6 The two yellow copper balls shown in the diagram prepare for electrical interconnection, forming the source (S) conductor and the gate (G) conductor.

[0034] Similarly, refer to Figure 7 As shown, when the enhancement transistor has a horizontal structure, its source (S), gate (G), and drain (D) terminals are all located on the same surface. Therefore, after placing the enhancement transistor on the carrier board, metal bumps or solder balls can be fabricated on the first surface of the enhancement transistor using a ball-mounting method. Figure 8 The three yellow copper balls shown in the diagram prepare for electrical interconnection, forming the source (S) conductor, the gate (G) conductor, and the drain (D) conductor.

[0035] S103. The reinforcing tube and each conductive component are encapsulated with a plastic encapsulation material to form the first encapsulation layer.

[0036] The molding compound can be an insulating medium such as epoxy molding compound (EMC), polyimide (PI), or BCB.

[0037] For example, taking a reinforced tube as a vertical structure, continue to refer to... Figure 6 As shown, during the encapsulation process, the encapsulation material simultaneously encapsulates and cures the reinforcing tube and each conductive component, thereby encapsulating the reinforcing tube and each conductive component within the encapsulation material to achieve a seal, thus forming the first encapsulation layer.

[0038] S104. The first encapsulation layer is processed to expose each conductive element, and an electrical connection layer corresponding to each conductive element is formed in the first encapsulation layer.

[0039] The electrical connection layer can also be called the circuit interconnection layer. For example, the electrical connection layer can be formed by copper plating to achieve electrical interconnection.

[0040] Continue to refer to Figure 6 As shown, since the molding compound completely encapsulates each conductive component, the first encapsulation layer can be ground by mechanical grinding to remove excess molding compound, exposing each conductive component (i.e., the metal bumps of the source S and gate G), and forming an electrical connection layer corresponding to the source S and an electrical connection layer corresponding to the conductive component of the gate G in the first encapsulation layer.

[0041] S105. Remove the carrier board and connect the first and second surfaces on both sides of the first encapsulation layer by wiring the conductive components in the reinforcing tube.

[0042] In this process, after the molding compound encapsulates the reinforcing tube and each conductive component to form the encapsulation, the molding compound cures and gains a certain strength. At this point, the role of the carrier plate is fulfilled. (Continue to refer to...) Figure 6 As shown, the carrier board is removed, and the electrical connection layer corresponding to the gate conductive element is extended to the second surface by drilling, so as to connect the first surface and the second surface on both sides of the first packaging layer. The drain electrical connection layer of the enhancement transistor is formed on the second surface, so that the gate and drain of the packaged enhancement transistor are on the same side, and the source is on the other side, realizing the change of the original electrode distribution position, forming a new enhancement transistor. Then, together with the driving element and the power supply, a new direct-drive GaN structure is formed through traditional packaging. This structure does not require a DBC substrate, the packaging process is simple, the packaging difficulty is reduced, the cost is reduced, and the problems existing in the traditional direct-drive gallium nitride structure packaging mentioned above are solved.

[0043] In summary, the embodiments of this application provide a method for fabricating a boost transistor. Through the fabrication process provided in this application, the conductive components of the boost transistor, such as the gate (G), drain (D), and source (S), are rearranged on the back and surface of the chip, thereby changing the original electrode distribution and forming a new boost transistor. This eliminates the need for a DBC substrate, reduces packaging difficulty and cost, and solves the problems existing in the traditional direct-drive gallium nitride structure packaging.

[0044] The first type, when the reinforcing tube has a vertical structure, has the following specific process flow: Optionally, step S102 above includes: The enhancement transistor is placed on a carrier plate, and a gate conductor and a source conductor are formed on the first surface.

[0045] In this embodiment, refer to Figure 6 As shown, a vertically structured reinforcing tube is fixed to a carrier plate using a temporary bonding film, and two copper balls are directly soldered onto the first surface using a ball-planting method to form the gate conductor and the source conductor, as shown. Figure 6 The two yellow copper balls shown.

[0046] Optionally, step S104 above includes: The first encapsulation layer is processed by grinding to expose each conductive component, and an electrical connection layer corresponding to the gate conductive component and an electrical connection layer corresponding to the source conductive component are formed in the first encapsulation layer.

[0047] In this embodiment, reference continues to be made to Figure 6As shown, on the completed plastic-encapsulated device structure, the excess plastic encapsulation on the first encapsulation layer is precisely removed by mechanical grinding, exposing the metal surfaces of the pre-embedded gate conductor and source conductor. Then, by laying metal layers, an electrical connection layer corresponding to the gate conductor and an electrical connection layer corresponding to the source conductor are formed.

[0048] Optionally, refer to Figure 9 As shown, step S105 above includes: S201, Remove the carrier board.

[0049] S202. A metal layer is laid on the second surface to form the drain electrical connection layer of the reinforcing tube.

[0050] S203, The drain electrical connection layer is extended to the first surface through the through hole of the first encapsulation layer.

[0051] In this embodiment, after the encapsulating material surrounds the reinforcing tube and each conductive component to form an encapsulation, the encapsulating material cures and gains a certain strength. At this point, the carrier plate's function is complete. (Continue to refer to...) Figure 6 As shown, the carrier board is removed, and through-holes are drilled in the first encapsulation layer to form vias. These vias contact the electrical connection layer corresponding to the gate conductor. A metal layer is then filled into the vias to form conductive pillars, which are connected to the electrical connection layer corresponding to the gate conductor. This allows the gate conductor of the enhancement transistor to be guided to the second surface via the conductive pillars and the electrical connection layer. In other words, after encapsulation, the gate (G) and drain (D) conductors of the newly formed enhancement transistor are distributed on the second surface, while the source (S) conductor is distributed on the first surface, thus changing the original electrode distribution. This eliminates the need for DBC (Diverterless Circuit Design) during encapsulation with the driver and power supply components, reducing encapsulation difficulty and cost.

[0052] Meanwhile, since the source S-conductive component of the booster diode is located on the bottom surface, it can be directly connected to the frame via solder / conductive adhesive, eliminating the wire bonding inductance of the original booster diode source and reducing the switching loss of the device.

[0053] The second type, when the enhancement transistor has a vertical structure, utilizes the fabrication process proposed in this application to transform the vertical structure enhancement transistor into one with three electrodes on the surface: gate (G), source (S), and drain (D), and the bottom surface having other elements (which can be S, or contain no electrical charge), as detailed below: Optionally, refer to Figure 10 As shown, step S105 above includes: S301, Remove the carrier board.

[0054] S302. A metal layer is laid on the second surface to form the drain electrical connection layer of the enhanced tube.

[0055] S303, The drain electrical connection layer is extended to the first surface through the through hole of the first encapsulation layer.

[0056] In this embodiment, reference Figure 11 As shown, after removing the carrier board, a metal layer is directly laid on the second surface to form the drain electrical connection layer of the reinforcing transistor. Then, through drilling, through-holes are formed in the first encapsulation layer, so that the through-holes contact the drain electrical connection layer. A metal layer is filled in the through-holes to form conductive pillars, which are then connected to the drain electrical connection layer. This allows the drain electrical connection layer of the reinforcing transistor to be guided to the first surface through the conductive pillars and the drain electrical connection layer. That is, continuing to refer to... Figure 7 As shown, the gate (G), drain (D), and source (S) electrodes of the newly formed enhanced transistor after packaging are all distributed on the first surface, realizing the transformation of the original electrode distribution structure.

[0057] The second surface of the newly formed enhanced tube can be anything, such as the source electrode or it can be free of any electrical charge.

[0058] refer to Figure 12 The diagram shown is a schematic of the package structure of the driver, the power supply, and the newly formed reinforced transistor after the above-mentioned packaging. Figure 12 As shown, this packaging structure eliminates the need for multiple electrodes, reducing packaging difficulty and shortening the foundry cycle.

[0059] The third type has a horizontally structured reinforcing tube. Optionally, the enhancement transistor has a horizontal structure, and the above step S102 includes: forming a gate conductor, a drain conductor, and a source conductor on the first surface.

[0060] In this embodiment, reference continues to be made to Figure 8 As shown, a horizontally structured reinforcing transistor is fixed to a carrier plate using a temporary bonding film, and three copper balls are directly soldered onto the first surface using a ball-planting method to form a gate conductor, a drain conductor, and a source conductor, as shown. Figure 8 The three yellow copper balls shown.

[0061] Optionally, the above step S104, which processes the first encapsulation layer to expose each conductive element and forms an electrical connection layer corresponding to each conductive element in the first encapsulation layer, includes: The first encapsulation layer is processed by grinding to expose each conductive element, and an electrical connection layer corresponding to the gate conductive element, the drain conductive element, and the source conductive element is formed in the first encapsulation layer.

[0062] In this embodiment, reference continues to be made to Figure 8As shown, on the completed plastic-encapsulated device structure, the excess plastic encapsulation on the first encapsulation layer is precisely removed by mechanical grinding, exposing the metal surfaces of the pre-embedded gate conductor, source conductor, and drain conductor. Then, by laying metal layers, an electrical connection layer corresponding to the gate conductor, an electrical connection layer corresponding to the source conductor, and an electrical connection layer corresponding to the drain conductor are formed, that is, an electrical connection layer corresponding to each conductor is distributed and formed.

[0063] Optionally, step S105 above includes: The source conductor is guided to the second surface through the through-hole of the first encapsulation layer.

[0064] In this embodiment, reference continues to be made to Figure 8 As shown, the carrier board is removed, and through drilling, a through hole is formed on the first encapsulation layer, so that the through hole contacts the electrical connection layer corresponding to the source conductor. A metal layer is filled in the through hole to form a conductive pillar, and the conductive pillar is connected to the electrical connection layer corresponding to the source conductor. Through the conductive pillar and the electrical connection layer corresponding to the source conductor, the source conductor of the enhancement transistor is guided to the second surface. That is, the gate (G) conductor and drain (D) conductor of the new enhancement transistor formed after encapsulation are distributed on the first surface, and the source (S) conductor is distributed on the second surface, realizing the change of the original electrode distribution position.

[0065] Optionally, after forming each electrical connection layer, if necessary, each electrical connection layer can be electroplated, secondary encapsulated, and then chemically plated (such as Ni / Au plating) to uniformly form a solderable, corrosion-resistant, oxidation-resistant, and low-contact-resistance contact layer. Thus, a new reinforced tube is encapsulated.

[0066] The process involves thickening the metal layer on the electrical connection layer to improve current carrying capacity and wire bonding reliability; secondary encapsulation to achieve insulation protection between adjacent electrical connection layers and prevent subsequent chemical plating from contaminating non-target areas; and chemical plating (such as Ni / Au plating) is applied to the first electrical connection layer and each electrode electrical connection layer after electroplating to form a solderable, corrosion-resistant, oxidation-resistant, and low-contact-resistance contact layer. Thus, a new reinforced tube is obtained through encapsulation.

[0067] Optionally, refer to Figure 13 The diagram shown is a circuit diagram of a direct-drive gallium nitride structure provided in this application. The direct-drive gallium nitride structure includes: a driver, a power dissipation device, and a enhancement transistor prepared in the above embodiments. The control terminal of the driving component is connected to the gate G of the power dissipation transistor and the gate G of the enhancement transistor, respectively. The source S of the power supply is connected to the drain D of the power supply transistor, the drain D is connected to the output terminal VOUT, and the source S of the power supply transistor is connected to the ground terminal GND.

[0068] The input terminal of the driver is used to connect to the power supply terminal VCC. The driver is used to send on / off commands to the power dissipation diode and / or the enhancement diode to control the on / off state of the power dissipation diode and / or the enhancement diode.

[0069] Optionally, the driving component, the power supply, and the enhancement transistor prepared in the above embodiments can be packaged into a single unit to obtain a direct-drive GaN structure.

[0070] In this embodiment, the new enhancement transistor obtained by the above packaging has its source S conductive element located on the bottom surface, which can be directly connected to the frame through solder / conductive adhesive, eliminating the wire bonding inductance of the original enhancement transistor source, reducing device loss and improving product application performance.

[0071] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

[0072] It will be apparent to those skilled in the art that this application is not limited to the details of the exemplary embodiments described above, and that this application can be implemented in other specific forms without departing from the spirit or essential characteristics of this application. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of this application is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this application. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. A method for preparing a reinforced tube, characterized in that, The preparation method includes: Provide carrier board; The reinforcing tube is placed on the carrier plate, and at least two polar conductive elements are formed on the first surface of the reinforcing tube; The reinforcing tube and each conductive component are encapsulated with a molding compound to form a first encapsulation layer; The first encapsulation layer is processed to expose each conductive element, and an electrical connection layer corresponding to each conductive element is formed in the first encapsulation layer. Remove the carrier plate and connect the first and second surfaces on both sides of the first encapsulation layer through the wiring of the conductive element in the reinforcing tube.

2. The method according to claim 1, characterized in that, The reinforcing tube has a vertical structure; The step of placing the reinforcing tube on the carrier plate and forming at least two conductive elements on the first surface of the reinforcing tube includes: The enhancement tube is placed on the carrier plate, and a gate conductor and a source conductor are formed on the first surface.

3. The method according to claim 2, characterized in that, The process of treating the first encapsulation layer to expose each conductive element, and forming an electrical connection layer corresponding to each conductive element in the first encapsulation layer, includes: The first encapsulation layer is processed by grinding to expose each electrode conductive element, and an electrical connection layer corresponding to the gate conductive element and an electrical connection layer corresponding to the source conductive element are formed in the first encapsulation layer.

4. The method according to claim 2, characterized in that, The step of removing the carrier plate and connecting the first and second surfaces on both sides of the first encapsulation layer through wiring of the conductive element in the reinforcing tube includes: Remove the carrier plate; One end of the gate conductor is guided to the second surface through a through-hole in the first encapsulation layer; A metal layer is laid on the second surface to form the drain electrical connection layer of the reinforcing tube.

5. The method according to claim 2, characterized in that, The step of removing the carrier plate and connecting the first and second surfaces on both sides of the first encapsulation layer through wiring of the conductive element in the reinforcing tube includes: Remove the carrier plate; A metal layer is laid on the second surface to form the drain electrical connection layer of the reinforcing tube; The drain electrical connection layer is extended to the first surface through the through-hole of the first encapsulation layer.

6. The method according to claim 1, characterized in that, The reinforcing tube has a horizontal structure; The step of placing the reinforcing tube on the carrier plate and forming at least two conductive elements on the first surface of the reinforcing tube includes: A gate conductor, a drain conductor, and a source conductor are formed on the first surface.

7. The method according to claim 6, characterized in that, The process of treating the first encapsulation layer to expose each conductive element, and forming an electrical connection layer corresponding to each conductive element in the first encapsulation layer, includes: The first encapsulation layer is processed by grinding to expose each conductive element, and an electrical connection layer corresponding to the gate conductive element, the drain conductive element, and the source conductive element is formed in the first encapsulation layer.

8. The method according to claim 6, characterized in that, The step of removing the carrier plate and connecting the first and second surfaces on both sides of the first encapsulation layer through wiring of the conductive element in the reinforcing tube includes: The source electrode is guided to the second surface through a through-hole in the first encapsulation layer and one end of the electrode.

9. A direct-drive gallium nitride structure, characterized in that, The direct-drive gallium nitride structure includes: a driver, a power supply, and a reinforcement transistor prepared according to any one of claims 1-8; The control terminal of the driving device is connected to the gate of the power dissipation transistor and the gate of the enhancement transistor, respectively. The source of the power dissipation diode is connected to the drain of the power enhancement diode, the drain of the power dissipation diode is connected to the output terminal, and the source of the power enhancement diode is connected to the ground terminal.

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