Display panel

Abstract

This application discloses a display panel including a substrate, a barrier layer, a thin-film transistor, and a photoelectric sensor. The barrier layer is disposed on the substrate. The thin-film transistor is disposed on the side of the barrier layer away from the substrate. The photoelectric sensor is spaced apart from the thin-film transistor. The photoelectric sensor includes a first semiconductor layer, a second semiconductor layer, and a transparent electrode. The first semiconductor layer is disposed on the substrate, the second semiconductor layer is disposed on a surface of the first semiconductor layer away from the substrate, and the transparent electrode is disposed on a surface of the second semiconductor layer away from the substrate. The barrier layer and the first semiconductor layer are disposed in the same layer and are made of the same material. Its advantage is that this application can reduce the manufacturing cost of the display panel.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a display panel. Background Technology

[0002] A display panel with X-ray detection capability includes a photoelectric sensor and a thin-film transistor (TFT). The photoelectric sensor receives light and converts the light signal into an electrical signal through the photovoltaic effect. The electrical signal is then input to the control circuit of the X-ray detection device via the switching control of the TFT, thereby enabling the detection function. However, conventional X-ray detection display panels require a large number of photomasks, resulting in higher costs. Summary of the Invention

[0003] Embodiments of this application provide a display panel that can reduce the manufacturing cost of the display panel.

[0004] Embodiments of this application provide a display panel, including: Substrate; A barrier layer, wherein the barrier layer is disposed on the substrate; A thin-film transistor, wherein the thin-film transistor is disposed on the side of the barrier layer away from the substrate; A photoelectric sensor is provided, which is spaced apart from the thin-film transistor. The photoelectric sensor includes a first semiconductor layer, a second semiconductor layer, and a transparent electrode. The first semiconductor layer is disposed on the substrate, the second semiconductor layer is disposed on a surface of the first semiconductor layer away from the substrate, and the transparent electrode is disposed on a surface of the second semiconductor layer away from the substrate. The barrier layer is disposed in the same layer as the first semiconductor layer, and the barrier layer is made of the same material as the first semiconductor layer.

[0005] Furthermore, the thin-film transistor includes a gate disposed on a surface of the barrier layer away from the substrate; The photoelectric sensor further includes a first connection electrode, which is disposed on a surface of the first semiconductor layer away from the substrate; The first connecting electrode is disposed in the same layer as the gate, and the first connecting electrode is made of the same material as the gate.

[0006] Furthermore, the material of the first semiconductor layer includes tin oxide, the material of the first connecting electrode includes copper, the material of the barrier layer includes tin oxide, and the material of the gate includes copper.

[0007] Furthermore, the thin-film transistor also includes a third semiconductor layer disposed on the side of the gate away from the substrate, wherein the second semiconductor layer and the third semiconductor layer are disposed in the same layer, and the second semiconductor layer and the third semiconductor layer are made of the same material.

[0008] Furthermore, the thickness of the first semiconductor layer is less than the thickness of the second semiconductor layer, and the thickness of the barrier layer is less than the thickness of the third semiconductor layer.

[0009] Furthermore, the material of the second semiconductor layer includes one of IGZO, IGO, IGTO, or IGZTO, and the material of the third semiconductor layer includes one of IGZO, IGO, IGTO, or IGZTO.

[0010] Furthermore, The thin-film transistor further includes a source and a drain, which are disposed on the side of the third semiconductor layer away from the substrate; The display panel further includes a second connection electrode, which is disposed on the side of the drain electrode away from the substrate, and the second connection electrode is electrically connected to the drain electrode through a via penetrating the film layer between the second connection electrode and the drain electrode; The transparent electrode is located in the same film layer as the second connecting electrode, and the transparent electrode is made of the same material as the second connecting electrode.

[0011] Furthermore, the display panel also includes a passivation layer that covers the source, the drain, and a portion of the third semiconductor layer. From a viewing angle along the thickness direction of the display panel, the passivation layer is spaced apart from the second semiconductor layer.

[0012] Furthermore, the display panel also includes a gate insulating layer disposed on the substrate and covering the gate. From a viewing angle along the thickness direction of the display panel, the gate insulating layer is spaced apart from the first semiconductor layer.

[0013] Furthermore, the edge of the gate is flush with the edge of the barrier layer.

[0014] The beneficial effects of this application are: This application provides a display panel that includes a barrier layer and a photoelectric sensor including a first semiconductor layer. The barrier layer and the first semiconductor layer are disposed on the same layer and made of the same material. In other words, when manufacturing the display panel, the barrier layer and the first semiconductor layer can be fabricated using a single photomask, eliminating the need for an additional photomask to fabricate the first semiconductor layer of the photoelectric sensor, thereby reducing the manufacturing cost of the display panel. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the display panel of this application from a viewing angle along its thickness direction; Figure 2 yes Figure 1 The diagram shown is a structural diagram of the display panel. Figures 3a-3f This is a schematic diagram of the manufacturing process of the display panel shown in Figure 2.

[0016] Explanation of reference numerals in the attached figures: 10-Display panel; 100-Substrate; 200-Barrier layer; 300-Thin film transistor; 310-Gate; 320-Third semiconductor layer; 330-Source; 340-Drain; 400-Photoelectric sensor; 410-First semiconductor layer; 420-Second semiconductor layer; 430-Transparent electrode; 440-First connection electrode; 500-Gate insulating layer; 600-Passivation layer; 700-Second connection electrode.

[0017] H-thickness direction Detailed Implementation The technical solutions in the embodiments of this application will now be described with reference to the accompanying drawings. The technical solutions described below are for illustrative purposes only and should not be construed as limiting the scope of protection of this application.

[0018] Furthermore, the terms "first," "second," and similar words do not indicate any order, quantity, or importance, but are merely used to distinguish different technical features. The terms "multiple" and similar words indicate two or more unless otherwise expressly specified.

[0019] Embodiments of this application provide a display panel 10, see reference. Figure 1 , Figure 2The display panel 10 includes a substrate 100, a barrier layer 200, a thin-film transistor 300, and a photoelectric sensor 400. The barrier layer 200 is disposed on the substrate 100. The thin-film transistor 300 is disposed on the side of the barrier layer 200 away from the substrate 100. The photoelectric sensor 400 is spaced apart from the thin-film transistor 300. The photoelectric sensor 400 includes a first semiconductor layer 410, a second semiconductor layer 420, and a transparent electrode 430. The first semiconductor layer 410 is disposed on the substrate 100. The second semiconductor layer 420 is disposed on a surface of the first semiconductor layer 410 away from the substrate 100. The transparent electrode 430 is disposed on a surface of the second semiconductor layer 420 away from the substrate 100. The barrier layer 200 is disposed in the same layer as the first semiconductor layer 410, and the barrier layer 200 and the first semiconductor layer 410 are made of the same material.

[0020] The display panel 10 with X-ray detection function includes a photoelectric sensor 400 and a thin-film transistor 300. The photoelectric sensor 400 receives light and converts the light signal into an electrical signal through the photovoltaic effect. The electrical signal is input to the control circuit of the X-ray detection device through the switching control of the thin-film transistor 300, thereby realizing the detection function. However, conventional solutions for display panels 10 with X-ray detection function have a large number of photomasks, resulting in a high cost. Therefore, this application provides a display panel 10 that includes a barrier layer 200 and a photoelectric sensor 400 including a first semiconductor layer 410. The barrier layer 200 and the first semiconductor layer 410 are disposed on the same layer and made of the same material. In other words, when manufacturing the display panel 10, the barrier layer 200 and the first semiconductor layer 410 can be fabricated using a single photomask, eliminating the need for an additional photomask to fabricate the first semiconductor layer 410 of the photoelectric sensor 400, thereby reducing the manufacturing cost of the display panel 10.

[0021] In this embodiment, the display panel 10 is used to detect X-rays.

[0022] In this embodiment, the main function of the photoelectric sensor is to receive light and convert the light signal into an electrical signal through the photovoltaic effect. The main function of the thin-film transistor device is to act as a control switch and transmit the electrical signal generated by the photovoltaic effect.

[0023] It should be noted that the working principle of the display panel for detecting X-rays is as follows: the light that acts on the second semiconductor layer of the photoelectric sensor is converted into an electrical signal due to the photovoltaic effect. The electrical signal is then input to the control circuit of the display panel through the switching control of the thin-film transistor device.

[0024] It is understood that in this embodiment, the second semiconductor layer serves as a light-absorbing layer for absorbing light.

[0025] In this embodiment, reference Figure 2 The thin-film transistor 300 includes a gate 310 disposed on a surface of the barrier layer 200 away from the substrate 100; the photoelectric sensor 400 further includes a first connection electrode 440 disposed on a surface of the first semiconductor layer 410 away from the substrate 100; wherein the first connection electrode 440 is disposed in the same layer as the gate 310, and the first connection electrode 440 is made of the same material as the gate 310.

[0026] It is understood that in this embodiment, since the thin-film transistor 300 includes a gate 310, which is disposed on a surface of the barrier layer 200 away from the substrate 100; and the photoelectric sensor 400 further includes a first connection electrode 440, which is disposed on a surface of the first semiconductor layer 410 away from the substrate 100; wherein the first connection electrode 440 and the gate 310 are disposed in the same layer, and the first connection electrode 440 and the gate 310 are made of the same material, that is, when manufacturing the display panel 10, the first connection electrode 440 and the gate 310 can be manufactured using a single photomask, without the need to add an additional photomask to manufacture the first connection electrode 440 of the photoelectric sensor 400, thereby reducing the manufacturing cost of the display panel 10.

[0027] In this embodiment, the first semiconductor layer 410 is made of tin oxide, the first connecting electrode 440 is made of copper, the barrier layer 200 is made of copper, and the gate 310 is made of copper.

[0028] It is understood that in this embodiment, since the material of the first semiconductor layer 410 includes tin oxide, the material of the first connecting electrode 440 includes copper, the material of the barrier layer 200 includes tin oxide, and the material of the gate 310 includes copper, that is, the first semiconductor layer 410 and the barrier layer 200 are made of the same material, and the first connecting electrode 440 and the gate 310 are made of the same material, when manufacturing the display panel 10, the barrier layer 200 and the first semiconductor layer 410 can be manufactured using a single photomask, and the first connecting electrode 440 and the gate 310 can be manufactured using a single photomask. It is not necessary to add an additional photomask to manufacture the first semiconductor layer 410 of the photoelectric sensor 400, nor is it necessary to add an additional photomask to manufacture the photoelectric sensor. The first connecting electrode 440 of 400 reduces the manufacturing cost of the display panel 10. Since the first semiconductor layer 410 is made of tin oxide and the first connecting electrode 440 is made of copper, during the fabrication of the photoelectric sensor 400 of the display panel 10, the copper-material first connecting electrode 440 contacts the SnO2-material first semiconductor layer 410. During the annealing process of the metal film layer forming the first connecting electrode 440, an interfacial reaction occurs between the copper-material first connecting electrode 440 and the SnO2-material first semiconductor layer 410, resulting in oxygen vacancies in the first semiconductor layer 410. Copper atoms, acting as acceptor dopants, are introduced into the SnO2 lattice, forming substitutional doping. Due to the Cu valence state Cu... + Cu² + Below Sn 4+ This allows for the introduction of acceptor levels near the valence band of SnO2, which capture electrons to generate positively charged holes. The majority carriers in the material of the first semiconductor layer 410 are converted from electrons to holes, thereby changing the conductivity type of the first semiconductor layer 410 from n-type to P-type. In this way, a photoelectric sensor 400 with a PIN structure for detecting X-rays can be formed simultaneously with the fabrication of the thin-film transistor 300, eliminating the need for additional processes to fabricate the photoelectric sensor and thus reducing the manufacturing cost of the display panel 10.

[0029] In this embodiment, reference Figure 2 The thin-film transistor 300 further includes a third semiconductor layer 320, which is disposed on the side of the gate 310 away from the substrate 100. The second semiconductor layer 420 and the third semiconductor layer 320 are disposed in the same layer, and the second semiconductor layer 420 and the third semiconductor layer 320 are made of the same material.

[0030] It is understood that in this embodiment, by setting the thin-film transistor 300 to also include a third semiconductor layer 320, the third semiconductor layer 320 is disposed on the side of the gate 310 away from the substrate 100, wherein the second semiconductor layer 420 and the third semiconductor layer 320 are disposed in the same layer, and the second semiconductor layer 420 and the third semiconductor layer 320 are made of the same material. That is to say, when manufacturing the display panel 10, the second semiconductor layer 420 and the third semiconductor layer 320 can be manufactured using a single photomask, without the need to add an additional photomask to manufacture the second semiconductor layer 420 of the photoelectric sensor 400, thereby reducing the manufacturing cost of the display panel 10.

[0031] In this embodiment, reference Figure 2 The display panel 10 further includes a gate insulating layer 500, which is disposed on the substrate 100 and covers the gate 310.

[0032] In this embodiment, reference Figure 2 From a viewing angle along the thickness direction H of the display panel 10, the gate insulating layer 500 is spaced apart from the first semiconductor layer 410.

[0033] It is understood that in this embodiment, since the gate insulating layer 500 is spaced apart from the first semiconductor layer 410 from a viewing angle along the thickness direction H of the display panel 10, the gate insulating layer 500 used to isolate the gate 310 from the third semiconductor layer 320 will not interfere with the subsequent fabrication of the second semiconductor layer 420 of the photoelectric sensor 400, so as to ensure that the second semiconductor layer 420 can be fabricated at the same time as the third semiconductor layer 320.

[0034] In this embodiment, reference Figure 2 The thickness a of the first semiconductor layer 410 is less than the thickness b of the second semiconductor layer 420, and the thickness c of the barrier layer 200 is less than the thickness d of the third semiconductor layer 320.

[0035] In this embodiment, the material of the second semiconductor layer 420 includes one of IGZO, IGO, IGTO, or IGZTO, and the material of the third semiconductor layer 320 includes one of IGZO, IGO, IGTO, or IGZTO.

[0036] In this embodiment, the material of the second semiconductor layer 420 is IGZO, and the material of the third semiconductor layer 320 is IGZO.

[0037] In this embodiment, the material of the second semiconductor layer 420 is IGO, and the material of the third semiconductor layer 320 is IGO.

[0038] In this embodiment, the material of the second semiconductor layer 420 is IGTO, and the material of the third semiconductor layer 320 is IGTO.

[0039] In this embodiment, the material of the second semiconductor layer 420 is IGZTO, and the material of the third semiconductor layer 320 is IGZTO.

[0040] In this embodiment, reference Figure 2 The thin-film transistor 300 further includes a source 330 and a drain 340, which are disposed on the side of the third semiconductor layer 320 away from the substrate 100. The display panel further includes a second connection electrode 700, which is disposed on the side of the drain 340 away from the substrate 100. The second connection electrode 700 is electrically connected to the drain 340 through a via penetrating the film layer between the second connection electrode 700 and the drain 340. The film layer where the transparent electrode 430 is located is the same as the film layer where the second connection electrode 700 is located, and the transparent electrode 430 and the second connection electrode 700 are made of the same material.

[0041] It is understood that in this embodiment, since the thin-film transistor 300 also includes a source 330 and a drain 340, the source 330 and the drain 340 are disposed on the side of the third semiconductor layer 320 away from the substrate 100. The display panel also includes a second connection electrode 700, which is disposed on the side of the drain 340 away from the substrate 100. The second connection electrode 700 is electrically connected to the drain 340 through a via penetrating the film layer between the second connection electrode 700 and the drain 340. The film layer where the transparent electrode 430 is located is the same as the film layer where the second connection electrode 700 is located, and the transparent electrode 430 and the second connection electrode 700 are made of the same material. That is to say, when manufacturing the display panel 10, the transparent electrode 430 and the second connection electrode 700 can be manufactured using a single photomask, without the need to add an additional photomask to manufacture the transparent electrode 430 of the photoelectric sensor 400, thereby reducing the manufacturing cost of the display panel 10.

[0042] In this embodiment, the material of the second connecting electrode 700 includes indium tin oxide.

[0043] In this embodiment, the transparent electrode 430 is made of indium tin oxide.

[0044] In this embodiment, the first connecting electrode 440 is electrically connected to the drain 340 of the thin-film transistor 300.

[0045] In this embodiment, reference Figure 2 The display panel 10 further includes a passivation layer 600, which covers a portion of the source 330, the drain 340, and the third semiconductor layer 320.

[0046] In this embodiment, reference Figure 2 From a viewing angle along the thickness direction H of the display panel 10, the edge of the passivation layer 600 is flush with the edge of the gate insulating layer 500.

[0047] In this embodiment, reference Figure 2 From a viewing angle along the thickness direction H of the display panel 10, the passivation layer 600 and the second semiconductor layer 420 are spaced apart.

[0048] It is understood that in this embodiment, since the passivation layer 600 and the second semiconductor layer 420 are spaced apart from each other when viewed from the thickness direction H along the display panel 10, the passivation layer 600 will not interfere with the subsequent fabrication of the transparent electrode 430 of the photoelectric sensor 400, so as to ensure that the transparent electrode 430 can be fabricated at the same time as the second connecting electrode 700.

[0049] In this embodiment, the first connecting electrode 440 is chemically bonded to the first semiconductor layer 410.

[0050] It is understood that in this embodiment, when fabricating the photoelectric sensor 400 of the display panel 10, the first connecting electrode 440 made of copper is in contact with the first semiconductor layer 410 made of SnO2, and during the annealing of the metal film layer forming the first connecting electrode 440, an interfacial reaction occurs between the first connecting electrode 440 made of copper and the first semiconductor layer 410 made of SnO2, so that the copper in the first connecting electrode 440 can be chemically bonded to the oxide in the first semiconductor layer 410.

[0051] In this embodiment, the gate 310 is chemically bonded to the barrier layer 200.

[0052] It is understood that in this embodiment, when fabricating the thin-film transistor 300 of the display panel 10, the gate 310 made of copper is in contact with the barrier layer 200 made of SnO2, and during the annealing of the metal film layer forming the gate 310, an interface reaction occurs between the first connecting electrode 440 made of copper and the first semiconductor layer 410 made of SnO2, so that the copper in the gate 310 can be chemically bonded to the oxide in the barrier layer 200.

[0053] In this embodiment, the edge of the transparent electrode 430 is flush with the edge of the second semiconductor layer 420.

[0054] In this embodiment, reference Figure 2 The edge of the gate 310 is flush with the edge of the barrier layer 200.

[0055] It is understood that in this embodiment, since the edge of the gate 310 is flush with the edge of the barrier layer 200, when manufacturing the display panel 10, a transparent metal layer is first deposited, and then a metal layer is deposited on the transparent metal layer. Using a semi-mask process, the gate 310 and the first connecting electrode 440 are first etched to form, and then the barrier layer 200 and the first semiconductor layer 410 are etched to form. In other words, the barrier layer 200, the gate 310, the first semiconductor layer 410 and the first connecting electrode 440 can be manufactured using a single semi-transparent mask, thereby further saving the number of masks and reducing the manufacturing cost of the display panel 10.

[0056] Embodiments of this application also provide a method for manufacturing a display panel 10, see reference. Figures 3a-3f The manufacturing method includes the following steps: A first transparent metal layer and a first metal layer are fabricated on a substrate 100, and the first metal layer and the first transparent metal layer are patterned using photolithography and etching processes, so that a gate 310 and a first connection electrode 440 are formed on the first transparent metal layer, and a barrier layer 200 and a first semiconductor layer 410 are formed on the substrate 100. A gate insulating layer 500 is fabricated on the substrate 100, so that the gate insulating layer 500 covers the gate 310, the first semiconductor layer 410 and the first connection electrode 440, and the gate insulating layer 500 is patterned by photolithography and etching processes to remove the gate insulating layer 500 covering the first semiconductor layer 410 and the first connection electrode 440. A third semiconductor layer 320 is formed on a surface of the gate insulating layer 500 away from the substrate 100, and a second semiconductor layer 420 is formed on a surface of the first semiconductor layer 410 away from the substrate 100. A second metal layer is formed on the gate insulating layer 500, and a portion of the second metal layer covers the third semiconductor layer 320. The second metal layer is patterned to form a source 330 and a drain 340 on the gate insulating layer 500. A passivation layer 600 is formed on the gate insulating layer 500; A second connecting electrode 700 is formed on the surface of the passivation layer 600 away from the substrate 100, and a transparent electrode 430 is formed on the surface of the second semiconductor layer 420 away from the substrate 100.

[0057] The specific embodiments of this application have been described in detail above. The embodiments disclosed above are merely preferred embodiments of this application. Those skilled in the art can make many modifications and improvements without departing from the concept of this application. All such modifications and improvements fall within the scope of protection defined by the claims of this application.

Claims

1. A display panel, characterized in that, include: Substrate; A barrier layer, wherein the barrier layer is disposed on the substrate; A thin-film transistor, wherein the thin-film transistor is disposed on the side of the barrier layer away from the substrate; A photoelectric sensor is provided, which is spaced apart from the thin-film transistor. The photoelectric sensor includes a first semiconductor layer, a second semiconductor layer, and a transparent electrode. The first semiconductor layer is disposed on the substrate, the second semiconductor layer is disposed on a surface of the first semiconductor layer away from the substrate, and the transparent electrode is disposed on a surface of the second semiconductor layer away from the substrate. The barrier layer is disposed in the same layer as the first semiconductor layer, and the barrier layer is made of the same material as the first semiconductor layer.

2. The display panel according to claim 1, characterized in that, The thin-film transistor includes a gate disposed on a surface of the barrier layer away from the substrate; The photoelectric sensor further includes a first connection electrode, which is disposed on a surface of the first semiconductor layer away from the substrate; The first connecting electrode is disposed in the same layer as the gate, and the first connecting electrode is made of the same material as the gate.

3. The display panel according to claim 2, characterized in that, The first semiconductor layer is made of tin oxide, the first connecting electrode is made of copper, the barrier layer is made of tin oxide, and the gate is made of copper.

4. The display panel according to claim 2, characterized in that, The thin-film transistor further includes a third semiconductor layer disposed on the side of the gate away from the substrate, wherein the second semiconductor layer and the third semiconductor layer are disposed in the same layer and are made of the same material.

5. The display panel according to claim 4, characterized in that, The thickness of the first semiconductor layer is less than the thickness of the second semiconductor layer, and the thickness of the barrier layer is less than the thickness of the third semiconductor layer.

6. The display panel according to claim 4, characterized in that, The material of the second semiconductor layer includes one of IGZO, IGO, IGTO, or IGZTO, and the material of the third semiconductor layer includes one of IGZO, IGO, IGTO, or IGZTO.

7. The display panel according to claim 4, characterized in that, The thin-film transistor further includes a source and a drain, which are disposed on the side of the third semiconductor layer away from the substrate; The display panel further includes a second connection electrode, which is disposed on the side of the drain electrode away from the substrate, and the second connection electrode is electrically connected to the drain electrode through a via penetrating the film layer between the second connection electrode and the drain electrode; The transparent electrode is located in the same film layer as the second connecting electrode, and the transparent electrode is made of the same material as the second connecting electrode.

8. The display panel according to claim 7, characterized in that, The display panel further includes a passivation layer that covers a portion of the source, the drain, and the third semiconductor layer, and has a gap between the passivation layer and the edge of the second semiconductor layer when viewed from the thickness direction of the display panel.

9. The display panel according to claim 2, characterized in that, The display panel further includes a gate insulating layer disposed on the substrate and covering the gate. From a viewing angle along the thickness direction of the display panel, there is a gap between the edge of the gate insulating layer and the edge of the first semiconductor layer.

10. The display panel according to claim 2, characterized in that, The edge of the gate is flush with the edge of the barrier layer.

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