Idler structure, wafer cleaning apparatus and cleaning method

Abstract

The application provides a kind of idler structure, wafer cleaning equipment and cleaning method, the idler structure includes: base, idler and idler shaft;Idler is rotatably connected with base, idler shaft is located in base, and is connected with idler;Idler is used to carry wafer;Idler shaft includes columnar main body, and the outer surface of columnar main body is provided with helical flow guide groove, and flow guide groove is used to flow guiding for the fluid injected into the idler shaft.The flow direction of the fluid acting on the idler shaft can be made consistent by using the flow guide groove, so that the rotational speed fluctuation of the wafer and the idler structure can be reduced by flow field regulation, and the cleaning uniformity of the wafer and the cleaning liquid utilization rate are improved.

Description

Technical Field

[0001] This application relates to the field of wafer cleaning technology, specifically to an idler wheel structure, wafer cleaning equipment, and cleaning method. Background Technology

[0002] Chemical mechanical polishing (CMP) is one of the core processes in wafer manufacturing. After CMP, the wafer surface requires post-processing to prevent contamination of semiconductor devices by trace ions and metal particles, ensuring the performance and yield of the semiconductor devices. Cleaning is one of the most important and frequent steps in semiconductor manufacturing.

[0003] During the wafer cleaning stage, to achieve a good and uniform cleaning effect, the wafer is typically set to rotate at a constant speed within the cleaning tank. Simultaneously, to monitor and ensure the stability of the wafer's rotational speed, an idler wheel structure (also known as a speed-measuring roller) is usually installed to rotate synchronously with the wafer. The actual rotational speed of the wafer is measured by measuring the rotational speed of the idler wheel structure. In this process, the rotational stability of the idler wheel structure affects the wafer's rotation, thus impacting the cleaning effect and the accuracy of the speed measurement. Summary of the Invention

[0004] In view of the above-mentioned technical problems, the purpose of this application is to provide an idler wheel structure, a wafer cleaning equipment and a cleaning method, which aims to reduce the influence of the fluid acting on the idler shaft of the idler wheel structure on the rotational speed fluctuation of the wafer and the idler wheel structure, and improve the cleaning uniformity and cleaning fluid utilization rate during wafer cleaning.

[0005] According to a first aspect of this application, an idler wheel structure is provided, comprising: Base; An idler wheel, rotatably connected to the base, is used to support the wafer; An idler shaft is located within the base and is connected to the idler wheel; The inertia shaft includes a cylindrical body, and a spiral guide groove is provided on the outer surface of the cylindrical body. The guide groove is used to guide the flow of fluid injected into the inertia shaft.

[0006] Optionally, the guide channel is a single-spiral guide channel, or The guide channel is a double-helix guide channel, including a first guide channel and a second guide channel.

[0007] Optionally, the first guide channel and the second guide channel have a phase difference, and the phase difference ranges from 150° to 210°.

[0008] Optionally, the parameters of the guide groove vary with a gradient along the axial direction of the idler shaft, and the parameters include at least one of the following: The diameter of the columnar body; The pitch of the guide groove; The depth of the guide channel; The width of the flow channel.

[0009] Optionally, the diameter of the columnar body gradually decreases along the axial direction from the inlet end to the outlet end of the inertial shaft; and / or Along the axial direction from the inlet end to the outlet end of the idler shaft, the pitch of the guide groove gradually increases; and / or Along the axial direction from the inlet end to the outlet end of the idler shaft, the depth of the guide channel gradually decreases; and / or Along the axial direction from the inlet end to the outlet end of the idler shaft, the width of the guide groove gradually decreases.

[0010] Optionally, at the inlet end, the pitch of the guide channel ranges from 3 to 5 mm; at the outlet end, the pitch of the guide channel ranges from 8 to 12 mm; and / or At the inlet end, the depth of the guide channel ranges from 0.9 to 1.2 mm; at the outlet end, the depth of the guide channel ranges from 0.3 to 0.6 mm.

[0011] Optionally, the cross-sectional shape of the guide channel is an isosceles trapezoid or a rectangle.

[0012] Optionally, when the cross-sectional shape of the guide channel is an isosceles trapezoid, at the inlet end, the upper base of the isosceles trapezoid ranges from 0.6 to 0.8 mm, and the lower base of the isosceles trapezoid ranges from 1.4 to 1.7 mm. At the outlet end, the upper base of the isosceles trapezoid ranges from 0.3 to 0.5 mm, and the lower base of the isosceles trapezoid ranges from 0.3 to 0.6 mm.

[0013] Optionally, when the cross-sectional shape of the guide channel is an isosceles trapezoid, the angle range of the base angle of the isosceles trapezoid includes 30° to 45°.

[0014] Optionally, when the cross-sectional shape of the guide channel is rectangular, the width of the rectangle at the inlet end ranges from 0.6 to 1.7 mm. At the outlet end, the width of the rectangle ranges from 0.3 to 0.6 mm.

[0015] Optionally, the angle between the sidewall of the guide channel and the outer surface of the inertia is fixed along the axial direction of the inertia from the inlet end to the outlet end.

[0016] Optionally, the helix angle of the guide channel ranges from 25° to 35°; and / or The inner wall roughness of the guide channel is less than 0.05 μm; and / or The end of the guide channel is provided with a rounded corner transition.

[0017] Optionally, the columnar body is a solid structure; Alternatively, the columnar body has a through hole that extends through the inertial shaft along its axial direction.

[0018] Optionally, the diameter of the through hole remains constant along the axial direction from the inlet end to the outlet end of the idler shaft; Alternatively, the diameter of the through hole gradually decreases along the axial direction from the inlet end to the outlet end of the idler shaft.

[0019] Optionally, the projection of the idler wheel's bearing position on the wafer onto the axis of the idler wheel is located within the axial region of the guide groove.

[0020] According to a second aspect of this application, a wafer cleaning apparatus is provided, comprising: an idler wheel structure as disclosed in any embodiment of this application.

[0021] According to a third aspect of this application, a wafer cleaning method is provided, comprising: Place the wafer on an idler wheel of an idler wheel structure; Control the rotation of the wafer, and drive the idler wheel and idler shaft of the idler wheel structure to rotate; Fluid is supplied to the idler wheel structure, and as the idler shaft rotates, the fluid is guided to flow in a spiral manner by a spiral guide groove disposed on the outer surface of the idler shaft.

[0022] The beneficial effects of this application include at least the following: The idler wheel structure, wafer cleaning equipment, and cleaning method provided in this application feature a spiral guide groove on the outer surface of the cylindrical body of the idler shaft in the idler wheel structure. This spiral guide groove guides the flow of fluid injected into the idler shaft, ensuring a consistent flow direction of the fluid acting on the idler shaft as the idler wheel structure rotates with the wafer. This achieves flow field control of the fluid. Compared to related technologies, this application effectively reduces the impact of fluid turbulence on the idler wheel structure and wafer rotation through flow field control. This reduces the speed fluctuations of the wafer and idler wheel structure, improves the stability and uniformity of the idler wheel structure and wafer rotation, improves the accuracy of wafer speed measurement, reduces the velocity difference of the cleaning fluid across the entire wafer surface during wafer cleaning, effectively improves the removal rate of edge particles on the wafer, and also improves the cleaning uniformity and cleaning fluid utilization rate.

[0023] In some embodiments, the guide channel is configured as a double helix guide channel (especially a symmetrical design with a 180° phase difference), which can form two symmetrical and oppositely oriented helical flow channels on the surface of the inertia shaft to guide the fluid acting on the inertia shaft more evenly. This allows the tangential and radial forces generated when the fluid flows through the inertia shaft to cancel each other out or balance each other, thereby forming a more stable and uniform flow field around the inertia shaft. This results in better suppression of flow field turbulence and further improves the stability and uniformity of the inertia structure and wafer rotation.

[0024] In some embodiments, the parameters of the idler wheel structure (such as at least one of the diameter of the columnar body, the pitch of the guide groove, the depth of the guide groove, and the width of the guide groove) are set to vary gradually along the axial direction of the idler shaft. This enables gradient control of the fluid turbulence intensity. For example, the diameter of the columnar body gradually decreases, the pitch of the guide groove gradually increases, the depth of the guide groove gradually decreases, and the width of the guide groove gradually decreases along the axial direction from the inlet end to the outlet end of the idler shaft. This allows the fluid turbulence intensity acting on the idler shaft to gradually decrease along the axial direction from the inlet end to the outlet end of the idler shaft. Specifically, at the inlet end, a larger groove depth and a smaller pitch generate stronger turbulence, which is beneficial for providing sufficient initial particle stripping force and efficiently removing large particulate contaminants within the idler wheel structure. At the outlet end, a smaller groove depth and a larger pitch significantly reduce the turbulence intensity, thereby reducing disturbance to wafer rotation.

[0025] It should be noted that the above general description and the following detailed description are merely exemplary and explanatory, and do not limit this application. Attached Figure Description

[0026] Figure 1 A front view of a wafer cleaning apparatus provided according to an embodiment of this application is shown; Figure 2 A side view of a wafer cleaning apparatus provided according to an embodiment of this application is shown; Figure 3 This shows a cross-sectional view of an idler wheel structure in the related art; Figure 4 A cross-sectional view of an idler gear structure provided according to an embodiment of this application is shown; Figure 5 Show Figure 4 Schematic diagrams of two embodiments of the guide groove on the inertial shaft; Figure 6 Show Figure 5 Schematic diagrams of two cross sections of the inertial axis at position AA; Figure 7 A schematic diagram showing the cross-sectional shape of the guide channel at the inlet and outlet ends according to the first embodiment of this application is provided; Figure 8A schematic diagram showing the cross-sectional shape of the guide channel at the inlet and outlet ends according to the second embodiment of this application is provided; Figure 9 A schematic flowchart of a wafer cleaning method provided according to an embodiment of this application is shown. Detailed Implementation

[0027] The preferred embodiments of this application are described in detail below with reference to the accompanying drawings, which illustrate preferred embodiments. However, this application can be implemented in different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the disclosure of this application. This application covers any substitutions, modifications, equivalent methods, and solutions made within the spirit and scope of this application. It should be noted that the accompanying drawings are in a simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of this application.

[0028] In the description of this application, the words "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment described as "exemplary" or "for example" in this application should not be construed as being more preferred or advantageous than other embodiments. References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a particular feature, structure, or characteristic described in connection with that embodiment. Thus, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0029] In this document, the term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. The terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the application. Furthermore, to facilitate a clear description of the technical solutions of the embodiments of this application, the terms "first," "second," etc., are used to distinguish identical or similar items with substantially the same function and effect. Those skilled in the art will understand that the terms "first," "second," etc., do not limit the quantity or execution order, and that "first," "second," etc., do not necessarily imply differences.

[0030] It should be noted that, in the description of this application, unless otherwise expressly specified and limited, the terms "set up," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0031] Many specific details of this application, such as the structure, materials, dimensions, processing techniques, and methods of the devices, are described below to provide a clearer understanding of the application. However, as those skilled in the art will understand, this application may be implemented without adhering to these specific details. Furthermore, the same reference numerals in the figures denote the same or similar structures, and therefore, repeated descriptions of them will be omitted. That is, the various parts of this specification are described in a combination of parallel and progressive approaches, with each part focusing on its differences from the others. Identical or similar parts can be referred to interchangeably.

[0032] In this application, "Chemical Mechanical Polishing (CMP)" is also referred to as "Chemical Mechanical Planarization (CMP)," and the two terms have the same meaning and practical function.

[0033] The working principle of chemical mechanical polishing is as follows: a polishing slurry composed of submicron or nano abrasive particles and a chemical solution flows between the wafer and the polishing pad. The polishing slurry is uniformly distributed under the action of the transmission and centrifugal force of the polishing pad to form a liquid film between the wafer and the polishing pad. The chemical components in the polishing slurry react with the wafer to convert insoluble substances into soluble substances. Then, these chemical reactants are removed from the wafer surface by the micromechanical friction of the abrasive particles and dissolved into the flowing polishing slurry and carried away. In the alternating process of chemical film formation and mechanical film removal, surface material is removed to achieve surface planarization, thereby achieving the purpose of global planarization.

[0034] After chemical mechanical polishing, wafers require post-processing such as cleaning and drying to avoid contamination of semiconductor devices by trace ions and metal particles, thus ensuring the performance and yield of semiconductor devices.

[0035] Figure 1 A front view of the wafer cleaning equipment provided in an embodiment of this application is shown. Figure 2 A side view of the wafer cleaning apparatus provided in an embodiment of this application is shown.

[0036] Combination Figure 1 and Figure 2 The wafer cleaning apparatus 10 provided in this embodiment includes a cleaning assembly and a support assembly. The cleaning assembly is disposed on both sides of the wafer 1 and is used to clean the front and back sides of the wafer 1. The support assembly is located below the wafer 1 and contacts the edge of the wafer 1, and is used to support and limit the rotation or turning of the wafer 1 in a vertical plane.

[0037] In some embodiments, the wafer cleaning apparatus 10 further includes a cleaning tank (not shown), which has a cavity formed inside for cleaning the wafer 1. The cleaning components and support components in the wafer cleaning apparatus 10 are both disposed within the cleaning tank of the wafer cleaning apparatus 10.

[0038] In some embodiments, the cleaning assembly includes a first cleaning element 21 and a second cleaning element 22 disposed opposite to each other. The first cleaning element 21 and the second cleaning element 22 are located on opposite sides of the wafer 1, and a gap is formed between the first cleaning element 21 and the second cleaning element 22 to form a cleaning region. The wafer 1 is located in the cleaning region after being mounted on the wafer support mechanism, so that the first cleaning element 21 and the second cleaning element 22 clean the wafer 1.

[0039] Furthermore, the first cleaning component 21 includes a first rotating roller 211, and the outer wall of the first rotating roller 211 is provided with a first brushing part 212. The first rotating roller 211 can drive the first brushing part 212 to rotate for brushing the front side of the wafer 1. The second cleaning component 22 includes a second rotating roller 221, and the outer wall of the second rotating roller 221 is provided with a second brushing part 222. The second rotating roller 221 can drive the second brushing part 222 to rotate for brushing the back side of the wafer 1.

[0040] In some embodiments, the cleaning assembly further includes a drive mechanism (not shown) that is tractively connected to one end of the first cleaning member 21 and the second cleaning member 22. The drive mechanism is used to drive the first cleaning member 21 and the second cleaning member 22 to rotate relative to the surface of the wafer 1 so as to clean the surface of the wafer 1.

[0041] In addition, the cleaning assembly also includes a first spraying element 23 and a second spraying element 24 disposed opposite to each other on both sides of the wafer 1. Both the first spraying element 23 and the second spraying element 24 are provided with spray holes, which are used to spray cleaning fluid onto the front and back sides of the wafer 1.

[0042] In some embodiments, the support assembly includes a first drive wheel structure 11, a second drive wheel structure 12, and an idler wheel structure (also known as a speed measuring wheel structure) 13, wherein the idler wheel structure 13 is located at the bottom edge of the wafer 1, and the first drive wheel structure 11 and the second drive wheel structure 12 are symmetrically arranged on both sides of the idler wheel structure 13.

[0043] During wafer 1 cleaning, the first drive wheel structure 11 and the second drive wheel structure 12 rotate under the drive of their respective drive motors. The first cleaning component 21 and the second cleaning component 22 on both sides of wafer 1 contact the surface of wafer 1 and rotate around the axis of the cleaning component. Under the action of friction, wafer 1, which is vertically arranged in the gap between the two cleaning components, rotates around the axis of wafer 1. The rolling cleaning component contacts the rotating wafer 1 to remove contaminants from the surface of wafer 1. During the rotation of wafer 1, the idler wheel structure 13 is driven to rotate passively. The number of rotations of the idler wheel structure 13 is calculated by a rear-mounted sensor or measuring device, thereby estimating the rotational speed of wafer 1 and monitoring the cleaning status of wafer 1.

[0044] The above description of the structure of each component inside the wafer cleaning equipment 10 is merely an exemplary description. Those skilled in the art can use it as a reference or make optimizations and modifications based on it. The redesigned structure of each component also falls within the protection scope of this embodiment.

[0045] The significant difference between the wafer cleaning equipment 10 provided in this application embodiment and the prior art lies in the improvement of the idler wheel structure 13. Specifically, Figure 3 A cross-sectional view of an idler wheel structure in the related art is shown. Figure 3 In the example shown, the idler wheel structure 13 includes: a base (also called a mounting base or fixed base) 31, an idler wheel (also called a rotor) 32, an idler shaft (also called a drive shaft) 34, and an end cap 35. The base 31 forms the supporting housing for the entire idler wheel structure 13, and the idler wheel structure 13 can be fixed to the wafer cleaning equipment 10 via the base 31. The idler wheel 32 is located at one end of the base 31 and is rotatably connected to the base 31, used to support the wafer 1. The idler shaft 34 is coaxially disposed within the base 31 and connected to the idler wheel 32. When the idler wheel 32 is driven to rotate by the wafer 1, the idler shaft 34 can rotate synchronously with the idler wheel 32 around its axis. The end cap 35 is detachably disposed at the axial end of the base 31, used to confine the idler wheel 32 and the idler shaft to the base 31, while simultaneously providing end sealing and axial limiting for the idler wheel structure 13.

[0046] In some embodiments, the idler wheel 32 includes a driven rubber wheel 33, which has a wafer slot circumferentially formed in the middle and a wafer inlet bevel at the opening of the wafer slot. When the wafer 1 is placed on the idler wheel structure 13 to achieve wafer carrying, the edge of the wafer 1 is located in the wafer slot on the driven rubber wheel 33.

[0047] Figure 3 In the middle, the idler shaft 34 has a smooth outer surface.

[0048] During operation, wafer 1 is placed in the wafer-bearing position of the driven roller 33 (i.e., in the wafer slot of the driven roller 33). When wafer 1 rotates under the action of external driving force, the driven roller 33 is driven to rotate through friction. The driven roller 33 then drives the idler shaft 34 to rotate synchronously through the idler wheel 32. Therefore, the actual rotational speed of wafer 1 can be measured by measuring the rotational speed of the idler shaft 34. Figure 1 and Figure 2 During the rotation of wafer 1, the cleaning fluid is sprayed onto the front and back sides of wafer 1 through the first spray member 23 and the second spray member 24 located on both sides of wafer 1. At the same time, the first cleaning member 21 and the second cleaning member 22 located on both sides of wafer 1 contact the surface of wafer 1 and rotate around their respective axes. Under the action of friction, wafer 1, which is vertically arranged in the gap between the two cleaning members, rotates around the axis of wafer 1. The rolling cleaning member contacts the rotating wafer 1 to remove contaminants from the surface of wafer 1.

[0049] During the wafer cleaning process, fluid (e.g., DIW, i.e., deionized water) can be injected into the idler wheel structure 13 from the inlet end of the idler shaft 34 (i.e., the end of the idler shaft 34 away from the end cap 35). This allows the idler shaft 34 to be lubricated by the fluid during its rotation, and the force generated by the fluid flow also removes dirt from the idler wheel structure 13, ensuring smooth rotation of the idler shaft 34 and the idler wheel 32.

[0050] However, the flow field generated when the fluid flows on the smooth surface of the idler shaft 34 is turbulent. This turbulent flow field disturbs the rotation of the idler shaft 34, causing abnormal rotational speed and affecting the accuracy of the speed measurement results. Simultaneously, this disturbance is also transmitted to the wafer 1 through the idler wheel 32 and the driven rubber wheel 33, causing abnormal rotation of the wafer 1 as well. This leads to poor rotational stability and cleaning effect of the wafer 1. For example, it can cause a low-speed zone of cleaning fluid at the edge of the wafer 1, resulting in incomplete removal of residual particles on the edge surface; it can cause fluctuations in the rotational speed of the wafer 1; and it can shorten the contact time between the cleaning fluid and the wafer 1, resulting in low utilization of the cleaning fluid.

[0051] This application improves the idler wheel structure 13, significantly reducing the impact of turbulence during fluid flow within the idler wheel structure 13 on the rotation of the idler wheel structure 13 and the wafer 1, effectively improving the stability and uniformity of the idler wheel structure and wafer rotation. Specifically, this application further optimizes the idler shaft in the idler wheel structure 13 by providing a spiral guide groove on the outer surface of the idler shaft. As the idler shaft rotates synchronously with the wafer 1, the guide groove on the outer surface of the idler shaft provides a continuous spiral guiding effect on the fluid acting on the idler shaft, allowing the fluid to flow orderly along a predetermined spiral path on the outer surface of the idler shaft. This ensures the consistency of the flow direction of the fluid acting on the idler shaft, thus forming a stable fluid flow field within the idler wheel structure 13. Through this flow field regulation, the disturbance of fluid turbulence on the idler wheel structure and wafer rotation is effectively suppressed, significantly reducing the speed fluctuation of the wafer and idler wheel structure. This helps to extend the contact time between the cleaning fluid and the wafer surface, improving the particle removal rate at the wafer edge, cleaning uniformity, and cleaning fluid utilization rate.

[0052] The structure of the idler gear structure 13 as defined in the embodiments of this application will be described in detail below: Figure 4 A cross-sectional view of an idler gear structure provided in an embodiment of this application is shown. This idler gear structure 13 can also be applied to, for example... Figure 1 and Figure 2 In the wafer cleaning equipment (also called wafer cleaning device) 10 shown, the core rotating component is used to measure the actual rotation speed of the wafer 1.

[0053] like Figure 4As shown, in this embodiment, the idler wheel structure 13 mainly includes: a base (also called a mounting base or fixed base) 41, an idler wheel (also called a rotor) 42, an idler shaft (also called a drive shaft) 44, and an end cap 45. The base 41 forms the supporting housing for the entire idler wheel structure 13, and the idler wheel structure 13 can be fixed to the wafer cleaning equipment 10 via the base 41. The idler wheel 42 is located at one end of the base 31 and is rotatably connected to the base 41, used to support the wafer 1. The idler shaft 44 is coaxially disposed within the base 41 and connected to the idler wheel 42. When the idler wheel 42 is driven to rotate by the wafer 1, the idler shaft 44 can rotate synchronously around its axis with the idler wheel 42. The end cap 45 is detachably disposed at the axial end of the base 41, used to restrict the idler wheel 42 and the idler shaft on the base 41, while simultaneously providing end sealing and axial limiting for the idler wheel structure 13.

[0054] In some embodiments, the base 41 is detachably fixed to the side wall of the cleaning tank or a dedicated bracket, and may have an idler shaft mounting position (e.g., a central hole extending axially through the base 41) for accommodating and supporting the idler shaft 44. The idler shaft 44 is housed within the central hole of the base 41, with its axis coinciding with or parallel to the axis of the central hole of the base 41. The left side of the idler shaft 44 may be connected to external equipment (such as sensors, fluid injection devices, etc.), and the right side of the idler shaft 44 cantilevers out to support the idler wheel 42. It is understood that the support between the idler shaft 44 and the base 41 may employ mechanical bearings (e.g., ceramic composite bearings) or other bearing structures conventional in the art.

[0055] In some embodiments, the idler wheel 42 can be fixed to the cantilever end of the idler shaft 44 by means of key connection, interference fit or thread locking, so that the idler shaft 44 and the idler wheel 42 can rotate synchronously.

[0056] In some embodiments, the idler wheel 42 includes a driven rubber wheel 43, which has a wafer slot circumferentially formed thereon. The surface of the wafer slot can be made of a flexible material to avoid hard contact with the edge of the wafer 1 and damage to the wafer 1. At the same time, the opening of the wafer slot has a wafer inlet bevel to enable accurate placement of the wafer 1.

[0057] When wafer 1 is placed on idler wheel structure 13 for wafer support, the edge of wafer 1 is located in the wafer slot on driven rubber wheel 43. When wafer 1 rotates under the drive of first drive wheel structure 11 and second drive wheel structure 12, its edge contacts driven rubber wheel 43 and drives driven rubber wheel 43, idler wheel 42 and idler shaft 44 to rotate as a whole around the axis of idler wheel structure 13 through friction. The actual rotation speed of wafer 1 can be indirectly obtained by detecting the rotation speed of idler shaft 44 or idler wheel 42 through a sensor (e.g., photoelectric sensor, encoder or magnetoelectric sensor).

[0058] In this embodiment, the idler shaft 44 includes a columnar body 441. The outer surface of the columnar body 441 is provided with a spirally extending guide groove. The guide groove is used to guide the flow of fluid acting on the outer surface of the idler shaft 44 (i.e. the outer surface of the columnar body 441) so that the flow direction of the fluid acting on the idler shaft 44 is consistent.

[0059] In some embodiments, a fluid injection device (not shown), such as a needle valve, is installed on the side of the base 41 away from the end cap 45. Before or during the rotation of the idler shaft 44 and the idler wheel 42 driven by the wafer 1, the needle valve injects fluid (e.g., deionized water DIW) into the central hole of the base 41. This fluid then acts on the outer surface of the idler shaft 44 through the gap between the idler shaft 44 and the central hole of the base 41. It is understood that the fluid acting on the outer surface of the idler shaft 44 can form a stable liquid film or gas-liquid mixture film on the outer surface of the idler shaft 44. This liquid film or gas-liquid mixture film can not only buffer the vibration transmitted when the wafer 1 rotates, but also lubricate the idler shaft 44 when it rotates, thereby reducing the rotational resistance of the idler shaft 44. At the same time, the fluid acting on the outer surface of the idler shaft 44 can also wash away particulate contamination caused by the rotational wear of the idler shaft 44 or particulate contamination that falls into the idler wheel structure 13 when the surface of the wafer 1 is cleaned.

[0060] Furthermore, when the idler shaft 44 rotates with the wafer 1, the fluid acting on the outer surface of the idler shaft 44 can enter the guide groove from the inlet end of the idler shaft 44 (i.e., the end closer to the fluid injection direction) and flow along the spiral path of the guide groove towards the outlet end of the idler shaft 44 (i.e., the end away from the fluid injection direction). Since the outer surface of the idler shaft 44 is provided with a spiral guide groove, during the rotation of the idler shaft 44 with the wafer 1, the guide groove can generate a continuous spiral guiding effect on the fluid acting on the outer surface of the idler shaft 44, so that the fluid that originally impacted the idler shaft 44 in a disordered manner is guided to flow in an orderly manner along the predetermined spiral path of the outer surface of the idler shaft 44, thereby ensuring that the flow direction of the fluid acting on the idler shaft 44 is consistent. It is understandable that by controlling the flow field in this way, the disturbance of fluid turbulence on the idler structure 13 and the rotation of wafer 1 can be effectively suppressed (such as torque fluctuation and speed fluctuation on the idler structure 13 and wafer 1). While improving the selectivity and uniformity of wafer 1, it can prolong the contact time between the cleaning fluid and the surface of wafer 1, which is beneficial to improving the particle removal rate, cleaning uniformity and cleaning fluid utilization rate of wafer edge during wafer cleaning.

[0061] In some embodiments, such as Figure 4As shown, the projection of the bearing position of the idler wheel 42 on the wafer 1 (i.e., the wafer slot of the driven rubber wheel 43 on the idler wheel 42) onto the idler shaft 44 is located within the axial region of the guide groove (i.e., the surface region of the idler shaft 44 between the two ends of the guide groove). That is, the guide groove covers the contact area between the wafer 1 and the idler wheel 42. In this way, the disturbance of fluid turbulence on the idler wheel structure 13 and the rotation of the wafer 1 (such as torque fluctuation and speed fluctuation on the idler wheel structure 13 and the wafer 1) can be further reduced. For example, the middle region of the idler wheel 42 has a groove, the cantilever end of the idler shaft 44 is connected to the bottom of the groove of the idler wheel 42, and the driven rubber wheel 43 is disposed on the outer periphery of the idler wheel 42 near the opening side of its groove.

[0062] Furthermore, the fluid introduced into the central hole of the base 41 will eventually be discharged through the gap between the base 41 and the idler wheel 42, see reference. Figure 4 , Figure 4 The arrows in the diagram indicate the flow path and direction of the fluid within the idler wheel structure 13.

[0063] The following is combined Figures 5 to 8 Some specific implementations of the inertia shaft 44 in this application are described below. It should be noted that... Figures 5 to 8 The structural diagrams of the idler shaft 44 in this embodiment are all exemplary descriptions. Those skilled in the art can use them as a reference or make optimizations and modifications based on them. The redesigned structure of the idler shaft 44 also falls within the protection scope of this embodiment.

[0064] Figure 5 It shows Figure 4 Schematic diagrams of two embodiments of the guide groove on the inertial shaft. Figure 6 It shows Figure 5 Schematic diagrams of two cross-sections of the intermediate inertia axis at position AA. Figure 7 This paper shows a schematic diagram of the cross-sectional shape of the guide channel at the inlet and outlet ends provided in the first embodiment of this application. Figure 8 A schematic diagram of the cross-sectional shape of the guide channel at the inlet and outlet ends provided in the second embodiment of this application is shown.

[0065] like Figure 5 As shown, where, Figure 5 Figure (a) further illustrates in Figure 4 A schematic diagram showing a single-spiral guide groove on the surface of the cylindrical body 441 of the central inertial shaft 44. Figure 5 Figure (b) further illustrates in Figure 4 A schematic diagram of a double-helix guide groove provided on the surface of the columnar body 441 of the inertial shaft 44.

[0066] like Figure 5As shown in Figure (a), in some embodiments, the guide groove provided on the surface of the columnar body 441 of the idler shaft 44 is a single-spiral guide groove 442. It is understood that the idler shaft 44 formed in this way is simple and has a lower processing difficulty. The single-spiral guide groove 442 extends from the inlet end of the idler shaft 44 to the outlet end of the idler shaft 44. The length of the idler shaft 44 along its axial direction (i.e., the length of the columnar body 441) can be set according to actual working conditions, including but not limited to 50 mm, so that the guide groove 442 can cover the contact area between the wafer 1 and the idler wheel 42.

[0067] In some embodiments, some parameters of the idler wheel structure 13 can be set to remain fixed along the axial direction of the idler shaft 44. For example, the helix angle (denoted as α) of the guide channel 442 can be set to remain fixed along the axial direction of the idler shaft 44, wherein the helix angle α of the guide channel 442 is defined as the angle between the tangent direction of the guide channel 442 and the cross-section of the columnar body 441. The specific selection of the helix angle α needs to take into account both the axial flow guiding capability and the circumferential flow field balance capability: when the helix angle α is small, the axial flow guiding component of the guide channel 442 is large, which is conducive to the rapid discharge of fluid, but the circumferential flow field homogenization capability is relatively weak; when the helix angle α is large, the guide channel 442 is closer to the circumferential annular groove, the circumferential flow field uniformity is better, but the axial discharge capability may decrease. Optionally, the value range of the helix angle α of the guide channel 442 includes 25° to 35°, for example, it can be set to 30°.

[0068] In some embodiments, some parameters of the idler wheel structure 13 can be set to vary gradually along the axial direction to adapt to different flow field control requirements at the inlet and outlet ends. For example, at least one of the following parameters can be set to vary gradually along the axial direction of the idler shaft 44: diameter of the columnar body 441, pitch of the guide groove 442, groove depth of the guide groove 442, and width of the guide groove 442. Specifically, the diameter of the columnar body 441 can be set to gradually decrease along the axial direction of the idler shaft 44 from the inlet end to the outlet end; and / or, the pitch of the guide groove 442 can be set to gradually increase along the axial direction of the idler shaft 44 from the inlet end to the outlet end; and / or, the groove depth of the guide groove 442 can be set to gradually decrease along the axial direction of the idler shaft 44 from the inlet end to the outlet end; and / or, the width of the guide groove 442 can be set to gradually decrease along the axial direction of the idler shaft 44 from the inlet end to the outlet end.

[0069] refer to Figure 5In Figure (a), the guide channel 442 may have a first pitch P1 on the side near the inlet end of the idler shaft 44; and a second pitch P2 on the side near the outlet end of the idler shaft 44, wherein the first pitch P1 is smaller than the second pitch P2. In some embodiments, the first pitch P1 ranges from 3 to 5 mm, and the second pitch P2 ranges from 8 to 12 mm. For example, the first pitch P1 may be set to 5 mm and the second pitch P2 to 10 mm. In other embodiments, the first pitch P1 ranges from 1.5 to 2.5 mm, and the second pitch P2 ranges from 4 to 6 mm. For example, the first pitch P1 may be set to 2.5 mm and the second pitch P2 to 5 mm.

[0070] refer to Figure 7 The cross-sectional shape of the guide channel 442 can be an isosceles trapezoid. (Reference) Figure 8 The cross-sectional shape of the guide channel 442 can also be rectangular. (Refer to...) Figure 7 Figure (a) in the middle and Figure 8 In Figure (a), on the side near the inlet end of the idler shaft 44, the guide groove 442 may have a first groove depth H1; see reference. Figure 7 Figure (b) in the middle and Figure 8 In Figure (b), on the side near the outlet end of the idler shaft 44, the guide groove 442 may have a second groove depth H2, wherein the first groove depth H1 is greater than the second groove depth H2. In some embodiments, the value range of the first groove depth H1 includes 0.9~1.2mm, and the value range of the second groove depth H2 includes 0.3~0.6mm. For example, the first groove depth H1 can be set to equal 1mm, and the second groove depth H2 can be set to equal 0.5mm.

[0071] Understandably, based on the principle of turbulence intensity control, the gradient change of the guide channel parameters allows for a smaller pitch and a larger channel depth at the inlet end of the idler shaft 44, resulting in stronger turbulence within the guide channel 442 (e.g., the Reynolds number Re at the inlet end can reach around 5000), effectively stripping particulate contaminants from the idler wheel structure 13. As the fluid flows axially to the outlet end, a larger pitch and a smaller channel depth gradually reduce the turbulence intensity within the guide channel 442 (e.g., the Reynolds number Re at the outlet end can drop to around 2000), effectively reducing subsequent disturbances to the wafer 1 and the idler wheel structure 13, and preventing secondary eddies or splashes from high-speed turbulence in the outlet region. In other words, this allows for a gradual transition from "strong decontamination" to "weak disturbance" as the fluid flows along the outer surface of the idler shaft 44, ensuring initial efficiency in stripping particles or impurities while minimizing subsequent disturbances to the wafer.

[0072] Furthermore, when the cross-sectional shape of the guide channel 442 is an isosceles trapezoid, refer to Figure 7In Figure (a), on the side near the inlet end of the inertial axis 44, the upper base (the shorter base) of the isosceles trapezoid may have a first length L1, and the lower base (the longer base) may have a second length L2; (Refer to Figure (a)). Figure 7 In Figure (b), on the side near the exit end of the idler shaft 44, the upper base of the isosceles trapezoid may have a third length L3, and the lower base may have a fourth length L4, wherein the first length L1 is greater than the third length L3, and the second length L2 is greater than the fourth length L4. In some embodiments, the value range of the first length L1 includes 0.6~0.8mm, the value range of the second length L2 includes 1.4~1.7mm, the value range of the third length L3 includes 0.3~0.5mm, and the value range of the fourth length L4 includes 0.3~0.6mm. For example, the first length L1 can be set to 0.8mm, the second length L2 to 1.5mm, the third length L3 to 0.5mm, and the fourth length L4 to 0.6mm.

[0073] When the cross-sectional shape of the guide channel 442 is rectangular, refer to Figure 8 In Figure (a), on the side near the inlet end of the inertia axis 44, the width of the rectangle may have a fifth length L5; see reference. Figure 8 In Figure (b), on the side near the exit end of the idler shaft 44, the width of the rectangle may have a sixth length L6, wherein the fifth length L5 is greater than the sixth length L6. In some embodiments, the value of the fifth length L5 ranges from 0.6 to 1.7 mm, and the value of the sixth length L6 ranges from 0.3 to 0.6 mm. For example, the fifth length L5 may be set to 1 mm, and the sixth length L6 may be set to 0.5 mm.

[0074] In some embodiments, the angle between the sidewall of the guide channel 442 and the outer surface of the inertia shaft 44 remains constant along the axial direction from the inlet end to the outlet end of the inertia shaft 44. For example, when the cross-sectional shape of the guide channel 442 is an isosceles trapezoid, refer to... Figure 7 Along the axial direction from the inlet end of the idler shaft 44 to the outlet end, the angle between the sidewall of the guide channel 442 and the outer surface of the idler shaft 44 (i.e., the base angle β of the isosceles trapezoid) remains constant. Figure 7 In the illustrated embodiment, the base angle β of the isosceles trapezoid ranges from 35° to 55°, for example, the base angle β of the isosceles trapezoid is equal to 45°.

[0075] In some embodiments, the tail of the flow guide 442 is provided with a rounded corner 443, the radius of which ranges from 0.15 mm to 0.25 mm, and in some embodiments may be set to 0.2 mm. This allows the fluid to flow smoothly out of the flow guide 442, preventing flow separation or stress concentration caused by sharp edges.

[0076] In some embodiments, the inner wall surface of the flow channel 442 may be polished or coated with a hydrophobic coating to reduce the roughness of the inner wall and reduce the adhesion of particles / impurities in the channel. For example, the roughness of the inner wall of the flow channel 442 is less than 0.05 μm to obtain a more stable laminar or weakly turbulent flow state.

[0077] like Figure 5 As shown in Figure (b), in some embodiments, the guide grooves provided on the surface of the columnar body 441 of the idler shaft 44 are double-helix guide grooves, specifically including a first guide groove 51 and a second guide groove 52. Both the first and second guide grooves of the double helix extend from the inlet end of the idler shaft 44 to the outlet end of the idler shaft 44. The axial length of the idler shaft 44 (i.e., the length of the columnar body 441) can be set according to actual working conditions, including but not limited to 50 mm, so that the first and second guide grooves 51 and 52 can cover the contact area between the wafer 1 and the idler wheel 42. This double-helix structure is particularly suitable for working conditions with high requirements for radial force balance. It is understandable that in a single-helix structure, when the fluid flows in the helical channel, it will generate a certain radial reaction force on the columnar body 441. Long-term operation may cause the idler shaft 44 to bear additional eccentric load, thus affecting the speed measurement accuracy. However, after adopting a double-helix symmetrical distribution, the radial fluid reaction forces generated by the first guide channel 51 and the second guide channel 52 can cancel each other in the circumferential direction, making the forces on the columnar body 441 and the idler shaft 44 more balanced and the rotation more stable.

[0078] Furthermore, in the double-helix guide channel, the first guide channel 51 and the second guide channel 52 have a phase difference, and the phase difference ranges from 150° to 210°. For example, the phase difference between the first guide channel 51 and the second guide channel 52 can be set to 180°. It can be understood that when the phase difference between the first guide channel 51 and the second guide channel 52 is 180°, the first guide channel 51 and the second guide channel 52 are symmetrically distributed. It can be understood that the symmetrically distributed first guide channel 51 and the second guide channel 52 can form two symmetrical and oppositely oriented spiral flow channels on the surface of the idler shaft, thereby guiding the fluid acting on the idler shaft 44 more evenly. This allows the tangential force and radial force generated by the fluid when flowing through the idler shaft 44 to cancel each other out or balance each other, thereby forming a more stable and uniform flow field around the idler shaft 44. This results in better suppression of flow field turbulence and further improves the stability and uniformity of the idler structure 13 and the wafer 1 during rotation.

[0079] In some embodiments, some parameters of the idler wheel structure 13 can be fixed along the axial direction of the idler shaft 44. For example, the helix angle (denoted as α) of the first guide groove 51 and the second guide groove 52 can be fixed along the axial direction of the idler shaft 44. The helix angle α of the first guide groove 51 and the second guide groove 52 is defined as the angle between the tangent direction of the first guide groove 51 and the second guide groove 52 and the cross-section of the columnar body 441. The specific angle selection of the helix angle α needs to take into account both the axial flow guiding capability and the circumferential flow field balance capability: when the helix angle α is small, the axial flow guiding component of the first guide groove 51 and the second guide groove 52 is large, which is conducive to rapid discharge of fluid, but the circumferential flow field homogenization capability is relatively weak; when the helix angle α is large, the first guide groove 51 and the second guide groove 52 are closer to the circumferential annular groove, the circumferential flow field uniformity is better, but the axial discharge capability may decrease. Optionally, the helix angle α of the first guide groove 51 and the second guide groove 52 are equal, and the value range includes 25° to 35°, for example, it can be set to 30°.

[0080] In some embodiments, some parameters of the idler structure 13 can be set to vary gradually along the axial direction to adapt to different flow field control requirements at the inlet and outlet ends. For example, at least one of the following can be set to vary gradually along the axial direction of the idler shaft 44: the diameter of the columnar body 441, the pitch of the first guide groove 51 and the second guide groove 52, the groove depth of the first guide groove 51 and the second guide groove 52, and the width of the first guide groove 51 and the second guide groove 52. Specifically, the diameter of the columnar body 441 can be gradually reduced along the axial direction of the idler shaft 44 from the inlet end to the outlet end; and / or, the pitch of the first guide groove 51 and the second guide groove 52 can be gradually increased along the axial direction of the idler shaft 44 from the inlet end to the outlet end; and / or, the depth of the first guide groove 51 and the second guide groove 52 can be gradually reduced along the axial direction of the idler shaft 44 from the inlet end to the outlet end; and / or, the width of the first guide groove 51 and the second guide groove 52 can be gradually reduced along the axial direction of the idler shaft 44 from the inlet end to the outlet end.

[0081] refer to Figure 5 In Figure (b), on the side near the inlet end of the idler shaft 44, both the first guide groove 51 and the second guide groove 52 can have a first pitch P1; on the side near the outlet end of the idler shaft 44, both the first guide groove 51 and the second guide groove 52 can have a second pitch P2, wherein the first pitch P1 is smaller than the second pitch P2. In some embodiments, the value range of the first pitch P1 includes 3~5mm, and the value range of the second pitch P2 includes 8~12mm. For example, the first pitch P1 can be set to be equal to 5mm, and the second pitch P2 can be set to be equal to 10mm.

[0082] In some embodiments, the cross-sectional shape and related parameters of each of the first and second guide channels 51 and 52 of the double helix can be the same as those of the aforementioned single helix guide channel 442.

[0083] For example, refer to Figure 7 The cross-sectional shape of both the first guide channel 51 and the second guide channel 52 can be an isosceles trapezoid. (Reference) Figure 8 The cross-sectional shape of both the first guide channel 51 and the second guide channel 52 can be rectangular. (Referring to...) Figure 7 Figure (a) in the middle and Figure 8 In Figure (a), on the side near the inlet end of the idler shaft 44, both the first guide groove 51 and the second guide groove 52 can have a first groove depth H1; (Refer to...) Figure 7 Figure (b) in the middle and Figure 8 In Figure (b), on the side near the outlet end of the idler shaft 44, both the first guide groove 51 and the second guide groove 52 can have a second groove depth H2, wherein the first groove depth H1 is greater than the second groove depth H2. In some embodiments, the value range of the first groove depth H1 includes 0.9~1.2mm, and the value range of the second groove depth H2 includes 0.3~0.6mm. For example, the first groove depth H1 can be set to equal 1mm, and the second groove depth H2 can be set to equal 0.5mm.

[0084] Understandably, based on the principle of turbulence intensity control, the gradient change of the guide channel parameters allows for the use of a smaller pitch and a larger channel depth at the inlet end of the idler shaft 44, resulting in strong turbulent shear forces in the first guide channel 51 and the second guide channel 52 (e.g., the Reynolds number Re at the inlet end can reach about 5000), thereby effectively stripping particulate contaminants from the idler wheel structure 13. As the fluid flows axially to the outlet end, a larger pitch and a smaller channel depth can be used to gradually reduce the turbulence intensity of the fluid in the first guide channel 51 and the second guide channel 52 (e.g., the Reynolds number Re at the outlet end can be reduced to about 2000), thereby effectively reducing subsequent disturbances to the wafer 1 and the idler wheel structure 13, and preventing secondary eddies or splashes from high-speed turbulence in the outlet region.

[0085] Furthermore, when the cross-sectional shape of both the first guide channel 51 and the second guide channel 52 is an isosceles trapezoid, refer to Figure 7 In Figure (a), on the side near the inlet end of the inertial axis 44, the upper base (the shorter base) of the isosceles trapezoid may have a first length L1, and the lower base (the longer base) may have a second length L2; (Refer to Figure (a)). Figure 7In Figure (b), on the side near the exit end of the idler shaft 44, the upper base of the isosceles trapezoid may have a third length L3, and the lower base may have a fourth length L4, wherein the first length L1 is greater than the third length L3, and the second length L2 is greater than the fourth length L4. In some embodiments, the value range of the first length L1 includes 0.6~0.8mm, the value range of the second length L2 includes 1.4~1.7mm, the value range of the third length L3 includes 0.3~0.5mm, and the value range of the fourth length L4 includes 0.3~0.6mm. For example, the first length L1 can be set to 0.8mm, the second length L2 to 1.5mm, the third length L3 to 0.5mm, and the fourth length L4 to 0.6mm.

[0086] When the cross-sectional shape of the first guide channel 51 and the second guide channel 52 are both rectangular, refer to Figure 8 In Figure (a), on the side near the inlet end of the inertia axis 44, the width of the rectangle may have a fifth length L5; see reference. Figure 8 In Figure (b), on the side near the exit end of the idler shaft 44, the width of the rectangle may have a sixth length L6, wherein the fifth length L5 is greater than the sixth length L6. In some embodiments, the value of the fifth length L5 ranges from 0.6 to 1.7 mm, and the value of the sixth length L6 ranges from 0.3 to 0.6 mm. For example, the fifth length L5 may be set to 1 mm, and the sixth length L6 may be set to 0.5 mm.

[0087] In some embodiments, the angle between the sidewalls of the first guide channel 51 and the second guide channel 52 and the outer surface of the inertia shaft 44 is fixed along the axial direction from the inlet end to the outlet end of the inertia shaft 44. For example, when the cross-sectional shape of the first guide channel 51 and the second guide channel 52 is both an isosceles trapezoid, refer to... Figure 7 Along the axial direction from the inlet end to the outlet end of the idler shaft 44, the included angle (i.e., the base angle β of the isosceles trapezoid) between the sidewalls of the first guide channel 51 / second guide channel 52 and the outer surface of the idler shaft 44 remains constant. Figure 7 In the illustrated embodiment, the base angle β of the isosceles trapezoid ranges from 35° to 55°, for example, the base angle β of the isosceles trapezoid is equal to 45°.

[0088] In some embodiments, the ends of both the first guide channel 51 and the second guide channel 52 are provided with rounded corners 443. The radius of the rounded corners 443 ranges from 0.15 mm to 0.25 mm, and in some embodiments it can be set to 0.2 mm. In this way, the fluid can be smoothly guided out of the first guide channel 51 and the second guide channel 52, preventing flow separation or stress concentration caused by sharp edges.

[0089] In some embodiments, the inner wall surfaces of the first guide channel 51 and the second guide channel 52 may be polished or coated with a hydrophobic coating to reduce the roughness of the inner walls and reduce the adhesion of particles / impurities in the channels. For example, the inner wall roughness of the first guide channel 51 and the second guide channel 52 is less than 0.05 μm to obtain a more stable laminar or weakly turbulent flow state.

[0090] It should be noted that, depending on the actual application requirements, a flow channel structure with three, four, or even more spirals can be adopted. As long as the spiral flow channels are evenly distributed along the circumference, a good flow field balance effect can be achieved.

[0091] In some embodiments, reference Figure 5 In Figures (a) and (b), the columnar body 441 of the inertia shaft 44 may have a first diameter d1 on the side near the inlet end of the inertia shaft 44; and a second diameter d2 on the side near the outlet end of the inertia shaft 44, wherein the first diameter d1 is larger than the second diameter d2. In this case, the columnar body 441 has a micro-conical structure, which can further accelerate the fluid velocity at the outlet end and promote the discharge of particles or impurities. Of course, in some other embodiments, the first diameter d1 may be equal to the second diameter d2.

[0092] like Figure 6 As shown, where, Figure 6 Figure (a) shows a schematic cross-sectional view of a columnar body 441 with a solid structure. Figure 6 Figure (b) shows a schematic cross-sectional view of a columnar body 441 with a hollow structure.

[0093] refer to Figure 6 In Figures (a) and (b), the outer surface of the columnar body 441 is provided with guide grooves (including a first guide groove 51 and a second guide groove 52). The first guide groove 51 and the second guide groove 52 are recessed radially inward from the outer surface of the columnar body 441, and their depth is much smaller than the radius of the columnar body 441, thereby ensuring that the columnar body 441 has sufficient structural strength and rigidity to withstand the pressure of the wafer.

[0094] The difference between the two is: Figure 6 In the embodiment shown in Figure (a), the columnar body 441 of the inertia shaft 44 is a solid structure. Figure 6In the embodiment shown in Figure (b), the cylindrical body 441 of the idler shaft 44 has a through hole 61 that extends through the idler shaft 44 axially. It can be understood that by providing the through hole 61, the overall weight of the idler wheel 42 and the idler shaft 44 can be significantly reduced, thereby reducing the moment of inertia. This allows the idler wheel structure 13 to respond more sensitively to changes in the rotational speed of the wafer 1, improving the dynamic response characteristics of the speed measurement. Furthermore, the through hole 61 can also serve as a return flow channel or pressure balance channel for the fluid inside the idler wheel structure 13, thus forming a composite flow field control system with the guide grooves on the outer surface of the cylindrical body 441, further improving the flow field control effect.

[0095] Furthermore, when the columnar body 441 has a through hole 61, in some embodiments, the diameter of the through hole 61 can be set to remain constant along the axial direction of the idler shaft 44 from the inlet end to the outlet end of the idler shaft 44. In other embodiments, the diameter of the through hole 61 can also be set to gradually decrease along the axial direction of the idler shaft 44 from the inlet end to the outlet end of the idler shaft 44.

[0096] The cleaning process of wafer 10 for wafer 1 provided in this embodiment specifically includes: During operation, wafer 1 is placed in the wafer-bearing position of the driven roller 43 (i.e., in the wafer slot of the driven roller 43). When wafer 1 rotates under the action of external driving force, the driven roller 43 is driven to rotate through friction. The driven roller 43 then drives the idler shaft 44 to rotate synchronously through the idler roller 42. Thus, the actual rotational speed of wafer 1 can be measured by measuring the rotational speed of the idler shaft 44. Figure 1 and Figure 2 During the rotation of wafer 1, the cleaning fluid is sprayed onto the front and back sides of wafer 1 through the first spray member 23 and the second spray member 24 located on both sides of wafer 1. At the same time, the first cleaning member 21 and the second cleaning member 22 located on both sides of wafer 1 contact the surface of wafer 1 and rotate around their respective axes. Under the action of friction, wafer 1, which is vertically arranged in the gap between the two cleaning members, rotates around the axis of wafer 1. The rolling cleaning member contacts the rotating wafer 1 to remove contaminants from the surface of wafer 1.

[0097] During the wafer cleaning process, fluid (e.g., DIW, i.e., deionized water) can be injected into the idler wheel structure 13 from the inlet end of the idler shaft 44 (i.e., the end of the idler shaft 44 away from the end cap 45). This allows the idler shaft 44 to be lubricated by the fluid during its rotation, and the force generated by the fluid flow is also used to remove dirt from the idler wheel structure 13, ensuring smooth rotation of the idler shaft 44 and the idler wheel 42.

[0098] Meanwhile, during fluid flow, the guide grooves on the outer surface of the idler shaft 44 can constrain and guide the fluid acting on the outer surface of the idler shaft 44, so that the flow direction of the fluid acting on the idler shaft 44 can be consistent, and the circumferential velocity component of the fluid flow can be partially converted into the axial velocity component, thereby reducing the degree of turbulence in the circumferential flow field. This can effectively reduce the influence of fluid turbulence on the rotation of the idler wheel structure 13 and the wafer 1, thereby reducing the rotational speed fluctuation of the wafer 1 and the idler wheel structure 13 (for example, the torque fluctuation of the fluid on the wafer 1 can be reduced to ±0.01 N·m, and the rotational speed fluctuation of the wafer 1 and the idler wheel structure 13 during the wafer cleaning process can be less than or equal to positive 0.5 rpm), improving the stability and uniformity of the idler wheel structure 13 and the wafer 1 during rotation. For example, the flow velocity difference of the cleaning fluid on the entire surface of the wafer 1 can be reduced to less than 5%. The stable and uniform rotation of wafer 1 significantly extends the contact time between the cleaning solution and the surface of wafer 1 (e.g., from 0.5s to 1.2s), thereby improving the removal rate of edge particles on the wafer (e.g., up to 98%), as well as increasing the utilization rate of the cleaning solution and the water consumption per wafer. For example, the removal rate of edge particles on the wafer can be increased to 98%, the utilization rate of the cleaning solution can be increased to 90%, and the water consumption per wafer can be reduced by 30%. In addition, the improved idler structure 13 can avoid frequent equipment adjustments and maintenance caused by flow field turbulence, reducing downtime for each maintenance and improving productivity.

[0099] Furthermore, embodiments of this application also provide a wafer cleaning method, referring to... Figure 9 , Figure 9 A schematic flowchart of a wafer cleaning method provided in an embodiment of this application is shown. This wafer cleaning method can be applied to the wafer cleaning equipment 10 disclosed in any of the foregoing embodiments. In specific implementation, as follows... Figure 9 As shown, the wafer cleaning method includes performing the following steps: Step 910: Place the wafer on the idler wheel of the idler wheel structure.

[0100] Step 920: Control the wafer to rotate, and drive the idler wheel and idler shaft of the idler wheel structure to rotate.

[0101] Step 930: Provide fluid to the idler wheel structure. When the idler shaft rotates, the fluid is guided to flow in a spiral manner by using the spiral guide grooves set on the outer surface of the idler shaft.

[0102] It should be noted that the specific implementation of each step in the wafer cleaning method described above can be found in the various embodiments of the aforementioned wafer cleaning equipment 10, and will not be repeated here.

[0103] It should be noted that this application does not impose strict restrictions on the order of implementation of the steps in the above wafer cleaning method. Unless otherwise specified, any two or more steps may be performed simultaneously or sequentially.

[0104] Finally, it should be noted that the above embodiments are merely examples for clearly illustrating this application and are not intended to limit the implementation. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this application.

Claims

1. An idler gear structure for measuring the actual rotational speed of a wafer, the idler gear structure comprising: Base; An idler wheel, rotatably connected to the base, is used to support the wafer; An idler shaft is located within the base and is connected to the idler wheel; The inertia shaft includes a cylindrical body, and a spiral guide groove is provided on the outer surface of the cylindrical body. The guide groove is used to guide the flow of fluid injected into the inertia shaft, so that the turbulence intensity of the fluid acting on the inertia shaft can be gradually reduced along the axial direction from the inlet end to the outlet end of the inertia shaft. The projection of the idler wheel's bearing position on the wafer onto the idler wheel's axis lies within the axial region of the guide groove; The parameters of the guide groove vary in a gradient along the axial direction of the idler shaft, and the parameters include at least one of the following: the diameter of the columnar body, the pitch of the guide groove, the depth of the guide groove, and the width of the guide groove; Along the axial direction from the inlet end to the outlet end of the idler shaft, the pitch of the guide groove gradually increases and the groove depth gradually decreases.

2. The idler structure of claim 1, wherein, The guide channel is a single spiral guide channel, or The guide channel is a double-helix guide channel, including a first guide channel and a second guide channel.

3. The idler structure of claim 2, wherein, The first guide channel and the second guide channel have a phase difference, and the phase difference ranges from 150° to 210°.

4. The idler structure of claim 1, wherein, Along the axial direction from the inlet end to the outlet end of the inertial shaft, the diameter of the columnar body gradually decreases; and / or Along the axial direction from the inlet end to the outlet end of the idler shaft, the width of the guide groove gradually decreases.

5. The idler structure of claim 1, wherein, At the inlet end, the pitch of the guide channel ranges from 3 to 5 mm; at the outlet end, the pitch of the guide channel ranges from 8 to 12 mm; and / or At the inlet end, the depth of the guide channel ranges from 0.9 to 1.2 mm; at the outlet end, the depth of the guide channel ranges from 0.3 to 0.6 mm.

6. The idler structure of claim 4, wherein, The cross-sectional shape of the guide channel is an isosceles trapezoid or a rectangle.

7. The idler structure of claim 6, wherein, When the cross-sectional shape of the guide channel is an isosceles trapezoid, at the inlet end, the upper base of the isosceles trapezoid ranges from 0.6 to 0.8 mm, and the lower base ranges from 1.4 to 1.7 mm. At the outlet end, the upper base of the isosceles trapezoid ranges from 0.3 to 0.5 mm, and the lower base of the isosceles trapezoid ranges from 0.3 to 0.6 mm.

8. The idler structure of claim 6, wherein, When the cross-sectional shape of the guide channel is an isosceles trapezoid, the angle range of the base angle of the isosceles trapezoid includes 30° to 45°.

9. The idler gear structure according to claim 6, wherein, When the cross-sectional shape of the guide channel is rectangular, the width of the rectangle at the inlet end ranges from 0.6 to 1.7 mm. At the outlet end, the width of the rectangle ranges from 0.3 to 0.6 mm.

10. The idler gear structure according to any one of claims 1-3, wherein, Along the axial direction of the inertia shaft from its inlet end to its outlet end, the included angle between the sidewall of the guide channel and the outer surface of the inertia shaft remains constant.

11. The idler gear structure according to any one of claims 1-3, wherein, The helix angle of the guide channel ranges from 25° to 35°; and / or The inner wall roughness of the guide channel is less than 0.05 μm; and / or The end of the guide channel is provided with a rounded corner transition.

12. The idler gear structure according to any one of claims 1-3, wherein, The columnar main body is a solid structure; Alternatively, the columnar body has a through hole that extends through the inertial shaft along its axial direction.

13. The idler gear structure according to claim 12, wherein, The diameter of the through hole remains constant along the axial direction from the inlet end to the outlet end of the idler shaft. Alternatively, the diameter of the through hole gradually decreases along the axial direction from the inlet end to the outlet end of the idler shaft.

14. A wafer cleaning device, characterized in that, include: The idler wheel structure as described in any one of claims 1-13.

15. A wafer cleaning method, applied to the wafer cleaning equipment as described in claim 14, the wafer cleaning method comprising: Place the wafer on an idler wheel of an idler wheel structure; Control the rotation of the wafer, and drive the idler wheel and idler shaft of the idler wheel structure to rotate; Fluid is supplied to the idler wheel structure, and as the idler shaft rotates, the fluid is guided to flow in a spiral pattern by spiral guide grooves disposed on the outer surface of the idler shaft. The projection of the idler wheel's bearing position on the wafer onto the idler wheel's axis is located within the axial region of the guide groove.

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