Dielectric layer replaceable electrostatic chuck, bonding method, and repair method

Abstract

This application discloses an electrostatic chuck with a replaceable dielectric layer, a bonding method, and a repair method. The electrostatic chuck includes a chuck body with embedded adsorption electrodes, a dielectric ceramic layer disposed above the chuck body for adsorbing wafers, and an adhesive layer disposed between the two and formed by curing a thermoplastic adhesive. The thermoplastic adhesive has a softening point higher than the maximum operating temperature of the electrostatic chuck, allowing the adhesive layer to maintain a solid bond within the normal operating temperature range; however, when heated to a temperature equal to or higher than the softening point, it softens, allowing the dielectric ceramic layer to separate from the chuck body. This application improves upon the problem of traditional electrostatic chucks being difficult to disassemble due to their integral structure, enabling independent replacement of damaged dielectric layers. It avoids the complete scrapping of the chuck due to dielectric layer damage or thinning, allowing the internal core components to be reused, effectively improving resource utilization and reducing consumable costs.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment technology, specifically to an electrostatic chuck with a replaceable dielectric layer, a bonding method, and a repair method. Background Technology

[0002] Electrostatic chucks are key components in semiconductor manufacturing processes used to hold wafers. They are widely used in demanding processes such as ion implantation, etching, and chemical vapor deposition. Their operational stability and surface condition directly affect the wafer flatness and final yield. A typical electrostatic chuck usually adopts an integral structure design, generally including a base and a ceramic body fixed to the base. The ceramic body has an electrode layer embedded inside to generate an adsorption electric field, and its outermost layer serves as a dielectric layer that directly contacts the wafer to provide a uniformly distributed electrostatic adsorption force.

[0003] During long-term service, the dielectric layer on the surface of an electrostatic chuck is prone to microscopic pits, surface roughening, or localized damage due to the combined effects of plasma bombardment, strong electric fields, and temperature cycling stress, leading to a decrease in wafer adhesion. Since most existing electrostatic chucks are non-removable monolithic structures, repairing damaged dielectric layers typically requires transporting the entire chuck to a specialized facility for complete grinding and polishing. This repair method not only has a long maintenance cycle, but repeated grinding can also irreversibly thin the dielectric layer. When the dielectric layer thickness falls below the minimum safe thickness for normal operation, even if other core functional areas containing the adsorption electrodes remain intact, the production line often has to scrap the entire ceramic body or even the entire electrostatic chuck. This traditional approach, limited by its monolithic structure, makes it difficult to achieve independent reuse of intact internal functional areas, increasing material costs and resource consumption in semiconductor manufacturing to some extent. Summary of the Invention

[0004] The main objective of this application is to provide an electrostatic chuck with a replaceable dielectric layer, a bonding method, and a repair method to solve the problems of existing electrostatic chucks, which are difficult to disassemble and replace after the dielectric layer is damaged due to their integral structure, resulting in a high overall scrap rate and a long repair cycle.

[0005] To achieve the above objectives, a first aspect of this application provides an electrostatic chuck with a replaceable dielectric layer, comprising:

[0006] An electrostatic chuck body, wherein an adsorption electrode is embedded inside the electrostatic chuck body;

[0007] A dielectric ceramic layer is disposed above the electrostatic chuck body to adsorb and support the wafer;

[0008] An adhesive layer is disposed between the electrostatic chuck body and the dielectric ceramic layer, and the adhesive layer is formed by curing a thermoplastic adhesive;

[0009] The thermoplastic adhesive has a softening point higher than the maximum operating temperature of the electrostatic chuck. The adhesive layer is configured to maintain a solid bond within a range not exceeding the maximum operating temperature, and to soften when heated to a temperature equal to or higher than the softening point of the thermoplastic adhesive, so that the dielectric ceramic layer can be separated from the electrostatic chuck body.

[0010] In one possible implementation, the thermoplastic binder includes a base resin and a resistance modifier, the base resin being a thermoplastic composite material, and the resistance modifier being configured to adjust the volume resistivity of the binder layer such that the volume resistivity of the binder layer matches the volume resistivity of the dielectric ceramic layer.

[0011] In one possible implementation, a chamfer is provided at the outer edge of the upper surface of the electrostatic chuck body, and the electrostatic chuck with replaceable dielectric layer further includes an edge sealing adhesive layer, which is applied to the chamfer and covers the outer edge of the adhesive layer to block external plasma from eroding the adhesive layer.

[0012] In one possible implementation, process holes are provided in both the electrostatic chuck body and the dielectric ceramic layer. A retaining ring is embedded between the electrostatic chuck body and the dielectric ceramic layer and around the process holes. The thickness of the retaining ring is adapted to the thickness of the adhesive layer to prevent the thermoplastic adhesive from overflowing into the process holes.

[0013] A second aspect of this application provides a bonding method for the above-mentioned dielectric layer replaceable electrostatic chuck, comprising the following steps:

[0014] Clean the surfaces of the electrostatic chuck body and the dielectric ceramic layer to be bonded;

[0015] A thermoplastic adhesive is coated on the surface of the electrostatic chuck body or the dielectric ceramic layer;

[0016] The component coated with the thermoplastic adhesive is heated and baked to evaporate the organic solvent in the thermoplastic adhesive and soften its surface to form an adhesive layer;

[0017] In a vacuum environment, the electrostatic chuck body is aligned with the dielectric ceramic layer;

[0018] The bonding process involves heating and applying pressure, followed by cooling to room temperature.

[0019] In one possible implementation, if a chamfer is provided at the outer edge of the upper surface of the electrostatic chuck body, after the step of cooling to room temperature to complete the bonding, the bonding method further includes: applying an edge-sealing adhesive layer to the outer edge of the adhesive layer and allowing it to cure.

[0020] When process holes are formed in the electrostatic chuck body and the dielectric ceramic layer, the bonding method further includes attaching a retaining ring around the process hole before the step of applying the thermoplastic adhesive.

[0021] In one possible implementation, the heating and baking step specifically includes:

[0022] The first stage of baking is performed at a temperature below the softening point of the thermoplastic adhesive to remove organic solvents.

[0023] The second stage of baking is performed at a temperature higher than the softening point of the thermoplastic adhesive, so that the surface of the thermoplastic adhesive is softened.

[0024] In one possible implementation, both the electrostatic chuck body and the dielectric ceramic layer have alignment holes; the alignment step specifically includes:

[0025] The dielectric ceramic layer is adsorbed using an electrostatic chuck for adsorption, and the electrostatic chuck for adsorption is provided with a pre-drilled hole.

[0026] A vertically upward light source is provided below the electrostatic chuck body;

[0027] Adjust the relative positions of the electrostatic chuck for adsorption, the dielectric ceramic layer, and the main body of the electrostatic chuck until light can pass through all the holes on the main body of the electrostatic chuck, the dielectric ceramic layer, and the electrostatic chuck for adsorption in sequence and be captured by the receiving device above. After confirming that the holes of the three are coaxial, the alignment is determined to be complete.

[0028] A third aspect of this application provides a method for repairing the aforementioned electrostatic chuck with a replaceable dielectric layer, used for replacement when the dielectric layer is damaged, comprising the following steps:

[0029] The electrostatic chuck to be repaired is heated until the temperature rises to equal or higher than the softening point of the thermoplastic adhesive, so that the thermoplastic adhesive reaches a softened state.

[0030] A reverse sliding force is applied horizontally to the dielectric ceramic layer and the electrostatic chuck body, causing them to slide relative to each other and debond.

[0031] Use a cleaning solvent to remove the residual thermoplastic adhesive from the surface of the electrostatic chuck body;

[0032] A replacement dielectric layer ceramic is provided, and a thermoplastic adhesive is coated on the surface of the replacement dielectric layer ceramic or the electrostatic chuck body. After heating, baking and alignment, the ceramic is bonded under heat and pressure in a vacuum environment. After cooling, the ceramic is rebonded to the electrostatic chuck body.

[0033] In one possible implementation, if an edge sealing adhesive layer is applied to the edge of the electrostatic chuck to be repaired, the repair method further includes removing the edge sealing adhesive layer at the edge of the electrostatic chuck before heating the electrostatic chuck to be repaired.

[0034] After the re-bonding with the electrostatic chuck body is completed, the method further includes: reapplying an edge-sealing adhesive layer to the outer edge of the adhesive layer and allowing it to cure;

[0035] Furthermore, in the step of heating the electrostatic chuck to be repaired, the set temperature range for heating is higher than the softening point of the thermoplastic adhesive and lower than the heat resistance limit temperature of the internal structure of the electrostatic chuck body.

[0036] The above-described one or more technical solutions in the embodiments of this application have at least one or more of the following technical effects:

[0037] This application provides an electrostatic chuck with a replaceable dielectric layer. By setting an adhesive layer formed by a thermoplastic adhesive between the chuck body and the dielectric ceramic layer, it overcomes the structural limitations of traditional chucks that are difficult to disassemble. When the dielectric layer is damaged, the adhesive layer softens when heated to its softening point or above, allowing the dielectric ceramic layer to separate from the chuck body, thus enabling independent replacement of the dielectric layer. This design avoids the situation where the entire chuck is scrapped due to an excessively thin dielectric layer in conventional overall grinding methods, allowing the body with embedded adsorption electrodes to be reused, improving resource utilization and reducing consumable costs. Simultaneously, the adhesive's softening point is higher than the chuck's maximum operating temperature, ensuring it maintains a solid bond within the normal operating range and meeting structural stability requirements during operation. Furthermore, this solution avoids the long cycle of sending the entire chuck out for rework, shortening maintenance time and contributing to maintaining the processing efficiency and equipment turnover of semiconductor production lines.

[0038] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 A schematic cross-sectional view of an electrostatic chuck with a replaceable dielectric layer provided in an embodiment of this application;

[0041] Figure 2 This is a schematic diagram illustrating the principle of an electrostatic chuck body and dielectric layer ceramic optical alignment method provided in an embodiment of this application.

[0042] Figure 3 A schematic diagram illustrating the steps of a bonding method for an electrostatic chuck with a replaceable dielectric layer provided in an embodiment of this application;

[0043] Figure 4 This is a schematic diagram illustrating the steps of a repair method for an electrostatic chuck with a replaceable dielectric layer, provided in an embodiment of this application.

[0044] Explanation of reference numerals in the attached drawings: 100, electrostatic chuck body; 110, ceramic body; 120, adsorption electrode; 130, chamfer; 140, silicone layer; 150, base; 160, process hole; 200, dielectric ceramic layer; 300, adhesive layer; 400, edge sealing adhesive layer; 500, retaining ring; 600, electrostatic chuck for adsorption; 610, alignment hole; 700, light source; 800, receiving device; 900, bonding machine base. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0046] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0047] The overall concept of the technical solution provided in this application is as follows:

[0048] Please see Figure 1 This embodiment provides an electrostatic chuck with a replaceable dielectric layer, comprising:

[0049] An electrostatic chuck body 100 is provided, with an adsorption electrode 120 embedded within it. Specifically, the electrostatic chuck body 100 serves as the basic support carrier of the overall structure, primarily supporting the layers above it and providing the necessary mechanical strength. To meet the basic insulation and heat conduction requirements in complex semiconductor processing environments, the electrostatic chuck body 100 is molded from a material with appropriate dielectric strength and thermal conductivity to ensure the overall structure maintains dimensional and physical property stability during temperature cycling and process manufacturing.

[0050] Furthermore, starting from the underlying functions of bottom support and insulating encapsulation, the structure of the electrostatic chuck body 100 can be flexibly configured according to actual process requirements. In an exemplary embodiment, the electrostatic chuck body 100 can adopt a basic structure similar to that of a conventional electrostatic chuck, such as including a ceramic body 110, a silicone layer 140, and a base 150 stacked from top to bottom, with an adsorption electrode 120 embedded in the ceramic body 110. The difference is that, in this application, the insulating protective layer on the upper surface of the electrostatic chuck body 100 is configured to be thinner to accommodate the additional dielectric ceramic layer 200 above, that is, the distance between the adsorption electrode 120 and the upper surface of the lower ceramic body 110 is shorter. For example, this distance is preferably configured to be 50-200 μm. It should be understood that the above-described specific stacked structure composition and specific thickness range are only illustrative examples of preferred embodiments of this application. Those skilled in the art can make adaptive structural replacements or size adjustments according to the specific insulation requirements of the semiconductor process and the overall chuck thickness index. This application does not specifically limit such conventional structural modifications and size fine-tuning.

[0051] Furthermore, the electrostatic chuck body 100 is internally equipped with an adsorption electrode 120 for generating an electrostatic field. By applying a working voltage to the adsorption electrode 120 through an external power source, an electrostatic force can be generated, thereby providing a stable adsorption effect on the wafer placed on the dielectric ceramic layer 200.

[0052] A dielectric ceramic layer 200 is disposed above the electrostatic chuck body 100 for adsorbing and supporting the wafer. Specifically, the dielectric ceramic layer 200 serves as the working surface layer directly facing the workpiece in the entire electrostatic chuck device, and is stacked along the thickness direction on the top of the electrostatic chuck body 100. Furthermore, to optimize electrostatic adsorption performance and thermal conductivity while ensuring dielectric strength, the thickness of each key film layer can be adapted to actual needs. For example, the thickness of the dielectric ceramic layer 200 can be configured to 100-300 μm. The upper surface ceramic portion of the ceramic body 110 of the electrostatic chuck body 100, together with the dielectric ceramic layer 200 and the adhesive layer 300, serves as a new dielectric layer for the electrostatic chuck. The total thickness of the above structure is approximately equivalent to the thickness of a conventional electrostatic chuck dielectric layer, for example, it can be configured to 300-400 μm. Meanwhile, the thickness of the adhesive layer 300 can be configured to 10-80 μm. It should be understood that the above thickness values ​​are merely preferred examples to meet specific semiconductor process parameters. Those skilled in the art can make corresponding adjustments based on operating voltage, wafer type, and heat dissipation requirements. This application does not impose strict limitations on specific dimensional values. In the harsh process environment of semiconductor manufacturing, the surface layer is configured as a ceramic material mainly due to the excellent hardness, good electrical insulation properties, and corrosion resistance to reactive gases or plasma inherent in ceramics. This dielectric ceramic layer 200 isolates the wafer to be processed above from the electrostatic chuck body 100 below, providing the wafer with a carrier surface possessing specific electrical properties.

[0053] An adhesive layer 300 is disposed between the electrostatic chuck body 100 and the dielectric ceramic layer 200, and the adhesive layer 300 is formed by curing a thermoplastic adhesive;

[0054] The thermoplastic adhesive has a softening point higher than the maximum operating temperature of the electrostatic chuck. The adhesive layer 300 is configured to maintain a solid bond within a range not exceeding the maximum operating temperature, and to soften when heated to a temperature equal to or higher than the softening point of the thermoplastic adhesive, so that the dielectric ceramic layer 200 can be separated from the electrostatic chuck body 100.

[0055] Specifically, the adhesive layer 300, as an intermediate dielectric layer, is sandwiched between the upper dielectric ceramic layer 200 and the lower electrostatic chuck body 100. This adhesive layer 300 is formed from a liquid or semi-solid thermoplastic adhesive through coating, bonding, and subsequent curing processes. In the cured state, the adhesive layer 300 firmly integrates the two components through intermolecular forces or mechanical interlocking effects at the interface, thus withstanding the mechanical and thermal stresses during semiconductor processing.

[0056] Furthermore, the softening point of the thermoplastic adhesive needs to be configured to be higher than the highest operating temperature achievable by the electrostatic chuck in conventional semiconductor manufacturing processes. Those skilled in the art know that the highest operating temperature of an electrostatic chuck in conventional semiconductor manufacturing processes such as etching or vapor deposition (CVD / PVD) is typically strictly controlled according to the specific process formulation. For example, the highest operating temperature of an electrostatic chuck can be 60°C, 80°C, 120°C, or up to 150°C. To ensure structural stability during semiconductor processing and to prevent accidental yielding or creep of the adhesive layer 300 during normal operation, the softening point of the thermoplastic adhesive is not only configured to be higher than this highest operating temperature, but preferably configured to be at least 20°C to 50°C higher with a safety margin. For example, when the highest operating temperature of an electrostatic chuck in a specific process is 120°C, the softening point of the thermoplastic adhesive can preferably be configured to be around 170°C. Those skilled in the art will understand that the maximum operating temperature mentioned in the specification refers to the maximum steady-state operating temperature that the electrostatic chuck is allowed to reach in the intended semiconductor process design. When the ambient temperature does not exceed the aforementioned maximum operating temperature, the polymer chain segments of the thermoplastic adhesive have low thermal energy and are in a relatively frozen stable state. Therefore, the adhesive layer 300 is configured to maintain a high-strength solid bond continuously within this normal operating temperature range. This solid-state connection provides excellent interlayer shear force and peel strength, ensuring that the electrostatic chuck effectively prevents the dielectric ceramic layer 200 from slipping or detaching and deforming when clamping the wafer under frequent heating and cooling thermal cycles or when facing process gas impacts, thereby ensuring the stability of the wafer processing technology and the rigidity of the overall structure.

[0057] Furthermore, when the dielectric layer ceramic 200 suffers surface damage due to long-term service and needs to be replaced during maintenance, the heat-softening property of the thermoplastic adhesive can be utilized to achieve non-destructive decoupling of the electrostatic chuck. Specifically, by applying an external heat source to the electrostatic chuck, when the temperature of the adhesive layer 300 is equal to or higher than the softening point of the thermoplastic adhesive, the adhesive material softens and yields, increasing its fluidity and thus reducing the interfacial bonding strength. In this softened state, the originally strong solid interfacial bonding force is significantly weakened, allowing the damaged dielectric layer ceramic 200 to separate from the underlying electrostatic chuck body 100 with extremely low mechanical resistance.

[0058] For example, the heat-separation mechanism avoids the cracking of the electrostatic chuck body 100 substrate caused by mechanical disassembly or grinding, allowing the electrostatic chuck body 100 with the internally embedded adsorption electrode 120 to be retained and reused, which facilitates the subsequent re-bonding of the dielectric layer ceramic 200 for replacement, thereby reducing the replacement cost of the dielectric layer and improving maintenance efficiency.

[0059] By setting an adhesive layer 300 formed of thermoplastic adhesive between the electrostatic chuck body 100 and the dielectric ceramic layer 200, the structural limitations of traditional chucks that are difficult to disassemble are improved. When the dielectric layer is damaged, the adhesive layer 300 softens when heated to its softening point or above, allowing the dielectric ceramic layer 200 to separate from the electrostatic chuck body 100, thus enabling independent replacement of the dielectric layer. This design avoids the situation where the entire chuck is scrapped due to an excessively thin dielectric layer in conventional overall polishing methods, allowing the body with the embedded adsorption electrode 120 to be reused, improving resource utilization and reducing consumable costs. At the same time, the softening point of the adhesive is higher than the maximum operating temperature of the chuck, ensuring that it maintains a solid bond within the normal operating range and meets the structural stability requirements during operation. In addition, this solution avoids the long cycle of sending the entire chuck out for rework, shortens maintenance time, and helps maintain the processing efficiency and equipment turnover of the semiconductor production line.

[0060] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0061] In an exemplary embodiment, the thermoplastic adhesive includes a base resin and a resistance modifier. The base resin is a thermoplastic composite material, and the resistance modifier is configured to adjust the volume resistivity of the adhesive layer 300 such that the volume resistivity of the adhesive layer 300 matches the volume resistivity of the dielectric layer ceramic 200. Specifically, the base resin serves as the main structural framework of the adhesive layer 300, giving the adhesive layer 300 thermoplasticity. By selecting one or more combinations of thermoplastic composite materials, such as PVB, PA, thermoplastic acrylic resin, or ethyl cellulose, it can be ensured that the adhesive layer 300 undergoes a reversible softening phase transition at a set process temperature threshold. This physical property ensures that when it is necessary to replace the damaged dielectric layer ceramic 200, the dielectric layer ceramic 200 can be quickly separated from the electrostatic chuck body 100 simply by increasing the temperature, while the softened adhesive layer 300 is easily removed without residue.

[0062] Furthermore, to achieve ideal thermoplastic separation and conductivity, the specific chemical composition and ratio of the thermoplastic binder can be flexibly adjusted according to the process window. In this embodiment, the thermoplastic binder is also simply referred to as adhesive. In an exemplary embodiment, the adhesive may include the following components by weight: 40-80 parts organic solvent, 10-40 parts base resin, 1-5 parts plasticizer, 0-5 parts resistance modifier, and a small amount of additives. Examples of the organic solvent include one or more combinations of anhydrous ethanol, acetone, cyclohexanone, ethyl acetate, and butyl acetate. Examples of the plasticizer include one or more combinations of triphenyl phosphate (TPP), triethyl citrate (TEC), dibutyl phthalate (DBP), and polyethylene glycol (PEG). The additives include coupling agents, stabilizers, and leveling agents, and their total amount preferably does not exceed [a certain percentage]. For example, silane coupling agents, phosphite antioxidants, and organosilicon leveling agents can be selected. It is understood that the specific component types and mass ratios described above are merely preferred basic formulation systems for achieving the objectives of this application. Equivalent solvent substitutions, additions or subtractions of additives, or minor adjustments to proportions made by those skilled in the art based on this, or even the direct use of commercially available wafer temporary bonding adhesives (such as the WaferBONDHT series) with similar thermophysical and electrical properties, do not depart from the core concept of this application.

[0063] Furthermore, the resistance modifier is introduced into the adhesive to adjust the volume resistivity of the adhesive layer 300, preventing the multilayer composite structure from blocking the leakage current path. Taking a Johnsen-Rahbek (JR) type electrostatic chuck as an example, its electric field establishment depends on the movement of charges to the chuck surface. If the volume resistivity of the adhesive layer 300 is too high, it will be difficult for charges to move to the chuck surface, thereby disrupting the Johnsen-Rahbek effect and significantly reducing wafer adsorption performance. Conversely, if the volume resistivity of the adhesive layer 300 is too low, the risk of breakdown will increase when a high-voltage working electric field is applied.

[0064] Preferably, in order for the electrostatic chuck with replaceable dielectric layer to have the same wafer adsorption performance as a conventional electrostatic chuck, it is necessary to control the volume resistivity of the adhesive layer 300 formed by the adhesive to match or be slightly lower than the volume resistivity of the ceramic. The volume resistivity of the adhesive layer 300 can be precisely controlled by adjusting the content of the resistance modifier in the adhesive. For example, an appropriate amount of ionic liquid can be doped into the base resin as a resistance modifier; specifically, one or more combinations of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt, 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt, or 1-hexyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide salt can be used.

[0065] For example, when the volume resistivity of the dielectric layer of the electrostatic chuck is at When the volume resistivity of the adhesive layer 300 is around 1000 rpm, by adding a suitable resistance modifier, the volume resistivity can be adjusted to a value within 1000 rpm. to This range ensures excellent adsorption capacity. Furthermore, this type of ionic liquid resistivity modifier functions similarly to a plasticizer, effectively reducing the volume resistivity of the adhesive layer by 300Ω while also lowering the softening point, thereby further optimizing the process window for subsequent thermal disassembly operations.

[0066] In an exemplary embodiment, please refer to Figure 1 The electrostatic chuck body 100 has a chamfer 130 at the outer edge of its upper surface. The electrostatic chuck with replaceable dielectric layer also includes an edge-sealing adhesive layer 400. This edge-sealing adhesive layer 400 is applied to the chamfer 130 and covers the outer edge of the adhesive layer 300, preventing external plasma from eroding the adhesive layer 300. Specifically, the chamfer 130 structure is specifically machined at the outer edge of the upper surface of the ceramic portion of the electrostatic chuck body 100. Its main purpose is to reserve sufficient space in the structural layout to facilitate the smooth application of the edge-sealing adhesive layer 400 in subsequent processes. By configuring the chamfer 130 with a reasonable preset angle and size, the required adhesive volume for encapsulation can be guaranteed, while avoiding weakening the mechanical support strength of the ceramic body edge due to excessive cutting. For example, the angle of the chamfer 130 can be configured as 45°±5°, while the length of the right-angled side of the chamfer 130 can be controlled within the range of 0.5 mm to 3 mm. It is understood that the specific chamfer angle and size range mentioned above are only specific examples of preferred embodiments. Those skilled in the art can make conventional adjustments based on the actual thickness of the electrostatic chuck body 100, the fluid characteristics of the encapsulating adhesive, and the specific requirements for edge strength. This application does not make any specific limitations here.

[0067] Furthermore, the sealing adhesive layer 400 can be made of a semiconductor-grade silicone material with good plasma resistance and high hermeticity. When the dielectric ceramic layer 200 is laminated with the underlying electrostatic chuck body 100 using a thermoplastic adhesive, the lateral cross-section of the adhesive layer 300 is exposed. In demanding semiconductor etching or deposition processes, the processing chamber is filled with high-density, high-energy plasma and highly corrosive reactive ionic gases. Applying the sealing adhesive layer 400 to the aforementioned chamfer 130 and tightly covering the outer edge of the adhesive layer 300 effectively prevents the high-density, high-energy plasma and highly corrosive reactive ionic gases in the reaction chamber from eroding the relatively fragile adhesive layer 300; it also significantly improves the lateral hermeticity of the electrostatic chuck adhesive layer 300.

[0068] Preferably, this lateral airtightness is directly related to the maintenance efficiency of the electrostatic chuck's cooling medium. Electrostatic chucks typically require the introduction of a cooling medium such as helium on the back side to regulate wafer temperature. For example, based on relevant leak detection test data, if the edge-sealing adhesive layer 400 is not coated around the outer ring of the adhesive layer 300, the sealing performance of the interface will deteriorate significantly, macroscopically manifested as an abnormally increased helium leakage rate. This will disrupt the vacuum microenvironment of the reaction chamber, causing the equipment to malfunction. Therefore, by adding a chamfer 130 and tightly coating the edge-sealing adhesive layer 400, the reliability of the electrostatic chuck can be ensured, and its service life extended.

[0069] In an exemplary embodiment, please refer to Figure 2 Both the electrostatic chuck body 100 and the dielectric ceramic layer 200 have interconnected process holes 160. A retaining ring 500 is embedded between the electrostatic chuck body 100 and the dielectric ceramic layer 200, surrounding the process holes 160. The thickness of the retaining ring 500 is adapted to the thickness of the adhesive layer 300 to prevent the thermoplastic adhesive from overflowing into the process holes 160. Specifically, in actual semiconductor processing, the electrostatic chuck needs to perform multiple auxiliary functions, such as lifting and transferring wafers via pins, or introducing a back-side cooling medium, such as helium, for heat management. Therefore, process holes 160, such as pin holes or helium gas holes, are typically formed through the electrostatic chuck body 100 and the upper dielectric ceramic layer 200. To ensure smooth flow, it is necessary to avoid adhesive blockage during coating. Based on this, at the interface where the electrostatic chuck body 100 and the dielectric ceramic layer 200 are stacked, a ring-shaped adhesive retainer 500 is embedded around each process hole 160 to prevent adhesive from entering the hole when applying adhesive.

[0070] Furthermore, to avoid disrupting the local electric field distribution of the electrostatic chuck due to the introduction of insulating foreign objects, the retaining ring 500 is made of a polymer material with good elasticity and antistatic properties, preferably antistatic silicone. Those skilled in the art will understand that any high-temperature resistant elastic composite material that meets the requirements of insulation, antistatic properties, and deformation support can be used as an equivalent substitute. The volume resistivity of the antistatic silicone is configured to match the volume resistivity of the ceramic material surrounding the electrostatic chuck, thereby ensuring the uniformity of the adsorption force. The softening point of the antistatic silicone should be higher than the ambient temperature of subsequent process nodes involving baking or heating to maintain its stable physical barrier morphology. In addition, to facilitate precise positioning and fixation during actual process assembly, the back of the retaining ring 500 can be pre-prepared with a high-temperature resistant silicone pressure-sensitive adhesive by coating, allowing it to be firmly attached to the outer edge of the process hole 160 on the surface of the electrostatic chuck body 100 or the dielectric ceramic layer 200 before entering the spin-coating adhesive process.

[0071] Preferably, the matching relationship between the thickness of the retaining ring 500 and the thickness of the adhesive layer 300 essentially involves a dynamic compression deformation process. In the initial stage of applying the thermoplastic adhesive, the natural thickness of the retaining ring 500 is specifically designed to be greater than the final target thickness of the adhesive layer 300, for example, it can be configured to be between 125% and 200% of the target thickness of the adhesive layer 300. This extra-thick design with a margin ensures that the retaining ring 500 has sufficient height to intercept lateral overflow of the adhesive when spin-coating or pouring the fluid thermoplastic adhesive. Subsequently, during the compression bonding process of the electrostatic chuck body 100 and the dielectric ceramic layer 200 using a bonding device, the elastic retaining ring 500 is compressed and deformed under vertical stress until it is compressed to the target thickness, completely flush with the surrounding adhesive layer 300. After the adhesive retainer ring 500 is deformed under pressure, it can effectively prevent the adhesive from overflowing into the process hole 160 and maintain the uniformity of the overall thickness of the electrostatic chuck.

[0072] Please see Figure 3 This embodiment also provides a bonding method for an electrostatic chuck with a replaceable dielectric layer as described in the above embodiments, including the following steps:

[0073] In step S110, the surfaces to be bonded between the electrostatic chuck body 100 and the dielectric ceramic layer 200 are cleaned. A high-purity cleaning medium can be used to clean the electrostatic chuck body 100 and the surfaces to be bonded between the dielectric ceramic layer 200, followed by drying. The high-purity cleaning medium includes, but is not limited to, deionized water, IPA, or dedicated wafer-level cleaning solvents.

[0074] In step S120, a thermoplastic adhesive is coated onto the surface of the electrostatic chuck body 100 or the dielectric ceramic layer 200. Specifically, before large-area coating, a barrier pretreatment is typically performed to prevent the flowable liquid or semi-solid adhesive material from overflowing into the internal fluid or mechanical channels. For example, a retaining ring 500 can be pre-attached to the outer ring of the process hole 160 on the surface of the electrostatic chuck body 100 or the dielectric ceramic layer 200. To avoid introducing unnecessary structural constraints, the process hole 160 includes, but is not limited to, conventional openings such as pin holes for penetrating wafer pins or helium gas holes for introducing cooling media.

[0075] Furthermore, after isolating the internal pores, the thermoplastic adhesive is evenly spread on the surface to be bonded using a fluid coating device. Preferably, a spin coating process can be used. The electrostatic chuck body 100 or dielectric ceramic layer 200 is placed on the worktable of the spin coater and firmly fixed by mechanical clamping or vacuum adsorption. Then, a preset volume of thermoplastic adhesive is evenly poured onto the surface to be coated, and the spin coating device's rotation program is started.

[0076] Preferably, the final film thickness of the adhesive layer 300 is directly related to the parameters in the spin coating process. By adjusting the total amount of adhesive, the rotation speed of the spin coating equipment, and the continuous spin coating time, the thickness of the adhesive film attached to the substrate surface can be quantitatively adjusted.

[0077] As a specific application example, the spin coating parameters can be flexibly set according to the size of the dielectric ceramic 200: for example, for an 8-inch dielectric ceramic 200, pouring 20 ml of adhesive and spin coating at a speed of 1200 rpm for 30 seconds can yield an adhesive layer 300 with a thickness of 20-25 μm; or for an 8-inch dielectric ceramic 200, pouring 20 ml of adhesive and spin coating at a speed of 450 rpm for 35 seconds can yield an adhesive layer 300 with a thickness of 50-55 μm; furthermore, for a 4-inch dielectric ceramic 200, pouring 5 ml of adhesive and spin coating at a speed of 1000 rpm for 25 seconds can yield an adhesive layer 300 with a thickness of 25-30 μm. It should be understood that the above-described combinations of adhesive amount, speed, and time are merely illustrative examples. Those skilled in the art can optimize conventional process parameters based on the specific viscosity of the adhesive and the target film thickness. This application does not impose strict limitations on such process details. By configuring the parameters appropriately, the thermoplastic adhesive can be distributed with high uniformity across the entire surface, resulting in a final adhesive layer thickness of 10-80 μm.

[0078] In step S130, the component coated with the thermoplastic adhesive is heated and baked to volatilize the organic solvent in the thermoplastic adhesive and soften its surface, forming an adhesive layer 300. Preferably, the above heating and baking process can be flexibly configured as a gradual heating curve or a multi-range temperature control program according to the volatility characteristics of the organic solvent used and the softening point of the adhesive. For example, the temperature can be maintained in a lower temperature range (e.g., 110°C to 130°C) for a certain period of time to drain the volatiles, and then the temperature can be raised to a higher temperature range (e.g., 170°C to 190°C) to achieve sufficient softening of the surface.

[0079] In step S140, under vacuum conditions, the electrostatic chuck body 100 and the dielectric layer ceramic 200 are aligned. Specifically, after completing the pre-treatment, the electrostatic chuck body 100 and the dielectric layer ceramic 200 need to be transferred to a dedicated bonding device for spatial assembly. The electrostatic chuck body 100 is mounted on the base of the bonding machine, and the dielectric layer ceramic 200 is adsorbed and suspended above using the electrostatic chuck 600 configured on the top of the bonding machine. The chamber environment for performing the alignment operation is set to a vacuum state; for example, the vacuum level of this environment can be controlled to be less than 0.5 kPa. Alignment and subsequent pressing under a vacuum environment with the gas removed can effectively remove residual air between the two layers, avoiding the entrainment of microbubbles or the formation of voids in the thermoplastic adhesive layer 300, and preventing discharge breakdown caused by bubbles or voids in the adhesive layer 300.

[0080] Furthermore, after establishing a vacuum microenvironment, the bonding equipment performs high-precision spatial alignment of the upper and lower components. This is achieved through the two-dimensional micro-motion and rotation mechanism equipped in the bonding machine. The micro-stage performs minute planar displacement and angular deflection compensation on the electrostatic chuck body 100 and the dielectric ceramic layer 200. This spatial alignment process can achieve basic spatial positioning through manual alignment, or automatically capture the outline, edge chamfer 130, or specific feature markings of the electrostatic chuck body 100 and the dielectric ceramic layer 200 with the help of a high-precision image recognition system, thereby achieving automated and precise alignment.

[0081] In step S150, heating and pressurization are applied for bonding, followed by cooling to room temperature to complete the bonding process. Specifically, after confirming accurate spatial alignment, a bonding machine is used to heat the electrostatic chuck body 100 and the dielectric ceramic layer 200 and apply specific pressure for bonding. The bonding machine can be modified to allow for stable mounting of the electrostatic chuck body 100 and bonding. In actual operation, the bonding machine drives the two surfaces to come into close contact under vacuum, and then simultaneously initiates the heating and pressurization process. For example, the equipment can heat the bonding interface to a temperature between 170°C and 190°C and apply a mechanical pressure of 1 kN to 10 kN, while maintaining the above temperature and pressure parameters for 1 to 5 minutes.

[0082] Furthermore, during the aforementioned heating and pressure holding stages, the softened thermoplastic adhesive achieves bonding under continuous mechanical pressure. The elastic retaining ring 500, pre-set around the process hole 160, is deformed under pressure during this bonding process until it is compressed to the target thickness flush with the surrounding adhesive layer 300. This process avoids lateral overflow of adhesive into the hole and ensures consistency in overall thickness.

[0083] In an exemplary embodiment, when a chamfer 130 is provided at the outer edge of the upper surface of the electrostatic chuck body 100, after the step of cooling to room temperature to complete the bonding, the bonding method further includes: applying an edge-sealing adhesive layer 400 to the outer edge of the adhesive layer 300 and curing it.

[0084] When a process hole 160 is provided in the electrostatic chuck body 100 and the dielectric ceramic layer 200, the bonding method further includes attaching a retaining ring 500 around the process hole 160 before the step of applying the thermoplastic adhesive.

[0085] Specifically, regarding the fabrication of the edge protection structure, after the electrostatic chuck body 100 and the dielectric ceramic layer 200 are bonded together and cooled to room temperature, a stable thermoplastic adhesive layer 300 is formed between the two layers. At this point, a sealing adhesive layer 400 is applied to the outer edge of the exposed adhesive layer 300. For example, this sealing adhesive layer 400 is typically made of semiconductor silicone material. After coating, the silicone is allowed to cure through natural air drying or low-temperature baking until the sealing adhesive layer 400 is fully set, thus producing an electrostatic chuck with a replaceable dielectric layer. The purpose of applying the sealing adhesive layer 400 is to utilize silicone material, which has better airtightness and plasma resistance than the adhesive layer 300 material, to improve overall airtightness and prevent the active ionic gas in the reaction chamber from eroding the internal thermoplastic adhesive material, thereby ensuring the long-term reliability of the chuck under harsh processes.

[0086] Furthermore, before applying the thermoplastic adhesive, the retaining ring 500 needs to be attached to the periphery of the process hole 160. To ensure the stability of the attachment and to withstand the subsequent high-temperature baking environment, the back of the retaining ring 500 is pre-coated with and prepared with a high-temperature resistant silicone pressure-sensitive adhesive. With the help of this pressure-sensitive adhesive layer, the retaining ring 500 can be firmly attached to the surface of the electrostatic chuck body 100 or the dielectric ceramic layer 200, preventing displacement or detachment during the subsequent spin-coating of the adhesive. In addition, the retaining ring 500 is made of antistatic silicone material, and its volume resistivity is configured to match the volume resistivity of the surrounding ceramic material to ensure the continuity and uniformity of the electrostatic field when penetrating the area, and to avoid abnormal local electrostatic adsorption due to the introduction of insulating foreign objects.

[0087] Preferably, in the bonding process, the adhesive retainer ring 500 is annular in shape, and its initial thickness is intentionally configured to be greater than the final target thickness of the adhesive layer 300, for example, it can be set to 125% to 200% of the target thickness of the adhesive layer 300. When applying a fluid adhesive, this reserved extra-thickness provides a sufficient height barrier to prevent adhesive overflow into the process hole 160. Subsequently, during the alignment and bonding process between the electrostatic chuck body 100 and the dielectric ceramic layer 200, as external mechanical pressure is applied, the elastic adhesive retainer ring 500 is compressed and deformed under vertical stress, eventually being compressed to a target thickness that matches the surrounding adhesive layer 300. This method ensures both the cleanliness and unobstructed flow of the process hole 160 and the uniformity of the overall thickness of the electrostatic chuck after bonding.

[0088] In an exemplary embodiment, the heating and baking step specifically includes:

[0089] The first stage of baking is performed at a temperature below the softening point of the thermoplastic adhesive to remove organic solvents.

[0090] The second stage of baking is performed at a temperature higher than the softening point of the thermoplastic adhesive, so that the surface of the thermoplastic adhesive is softened.

[0091] Specifically, for the pretreatment process of thermoplastic adhesives after coating, this embodiment employs a two-stage heating and baking strategy with a specific temperature gradient. The purpose of the first stage of baking is to promote the stable and sufficient evaporation and precipitation of organic solvents inside the adhesive layer 300. At this stage, the baking temperature is specifically set below the softening point of the thermoplastic adhesive used. Since the thermoplastic adhesive in the solvent has not yet fully softened, the solvent easily evaporates from the gaps between the thermoplastic adhesive molecules, thus preventing the introduction of microbubbles or voids into the adhesive layer 300 due to solvent residue during subsequent softening steps. For example, when the softening point of the thermoplastic adhesive used is around 170 degrees Celsius, the temperature of the first stage of baking can be set between 110 and 130 degrees Celsius and maintained for 3 to 5 minutes. After this stage of treatment, the volatile components inside the adhesive layer 300 are effectively removed, ensuring the density and structural strength of the interface during subsequent high-temperature pressing.

[0092] Furthermore, after the organic solvent has evaporated, a second stage of baking is performed, with the temperature controlled above the softening point of the thermoplastic adhesive. At this temperature, the surface of the thermoplastic adhesive softens, increasing its fluidity and thus improving its interfacial wetting and adhesion to the surface of another component to be bonded. For example, corresponding to the aforementioned softening point characteristics, the temperature of the second stage of baking can be increased to 170°C to 190°C and maintained for 4 to 6 minutes.

[0093] Preferably, when setting the maximum temperature threshold for the second stage of baking, it is necessary to consider not only the softening phase change requirements of the thermoplastic adhesive itself, but also the heat resistance limit of the surrounding auxiliary structures. In particular, when a retaining ring 500 for preventing adhesive overflow is attached to the periphery of the process hole 160 of the electrostatic chuck, the temperature of the second stage of baking should be configured not to exceed the softening point of the retaining ring 500. This maintains the physical stability of the retaining ring 500 throughout the preheating and baking process, ensuring its continuous and stable function as an isolation barrier. Through this precise two-stage temperature gradient control, a material basis with optimal interfacial wetting conditions can be provided for subsequent high-precision vacuum bonding and pressure curing.

[0094] In an exemplary embodiment, please refer to Figure 2 Both the electrostatic chuck body 100 and the dielectric ceramic layer 200 are provided with alignment holes 610; the alignment step specifically includes:

[0095] The dielectric ceramic layer 200 is adsorbed using an electrostatic chuck 600 for adsorption, and the electrostatic chuck 600 for adsorption is provided with a reserved hole.

[0096] A vertically upward light source 700 is provided below the electrostatic chuck body 100;

[0097] Adjust the relative positions of the electrostatic chuck 600 for adsorption, the dielectric ceramic layer 200, and the electrostatic chuck body 100 until light can pass through all the holes on the electrostatic chuck body 100, the dielectric ceramic layer 200, and the electrostatic chuck 600 for adsorption in sequence and be captured by the receiving device 800 above. After confirming that the holes of the three are coaxial, the alignment is determined to be complete.

[0098] Specifically, electrostatic chucks typically contain through-holes for wafer lifting or cooling fluid transport. Alignment of these through-holes between the upper and lower layers is crucial during dielectric layer reassembly and bonding. Therefore, this technical solution introduces an alignment method based on the physical properties of optical axis penetration. Both the electrostatic chuck body 100 and the dielectric ceramic layer 200 are pre-machined with corresponding alignment holes 610. For example, these alignment holes 610 can reuse existing process through-holes in the chuck structure. During the assembly preparation stage, the electrostatic chuck 600 at the top of the bonding equipment first picks up the dielectric ceramic layer 200 to be bonded. To match the entire optical system, the electrostatic chuck 600 also has pre-drilled holes matching the number and position of the holes in the lower dielectric ceramic layer 200, completing the basic pre-alignment between the two during the adsorption action.

[0099] Furthermore, a vertically upward detection light source 700 is provided below the electrostatic chuck body 100. Since the electrostatic chuck body 100 is opaque, the light beam can only propagate upwards through the internal through-hole. Therefore, when there is a slight lateral displacement or angular deflection between the upper dielectric ceramic layer 200 and the lower electrostatic chuck body 100 in space, the inner wall edge of the channel will physically block the light path, causing the upward transmitted light intensity to be attenuated or blocked.

[0100] Preferably, during the dynamic adjustment and alignment confirmation stage, operators or automated equipment finely adjust the relative spatial position between the dielectric layer ceramic 200 carried by the electrostatic chuck 600 for adsorption and the electrostatic chuck body 100 below using a micro-motion platform. As the layers gradually overlap in geometric projection, the light flux through the penetration channel changes accordingly. When finely adjusted to a specific position, allowing the vertical light rays from the bottom to sequentially penetrate all the series holes on the electrostatic chuck body 100, the dielectric layer ceramic 200, and the top electrostatic chuck 600 for adsorption, and finally project onto the optical receiving device 800 located at the top or periphery of the system to form a complete light spot, the receiving device 800 will capture a signal indicating the continuity of the optical path. This mechanism ensures alignment accuracy and avoids the process risks of hole misalignment or channel blockage.

[0101] Please see Figure 4 This embodiment also provides a repair method for an electrostatic chuck with a replaceable dielectric layer as described in the above embodiments, used for replacement when the dielectric layer is damaged, including the following steps:

[0102] In step S210, the electrostatic chuck to be repaired is heated until the temperature rises to be equal to or higher than the softening point of the thermoplastic adhesive, so that the thermoplastic adhesive reaches a softened state.

[0103] Furthermore, the thermoplastic adhesive maintains high bonding strength within the operating temperature range of room temperature and conventional semiconductor processing. However, when the actual heating temperature rises above the specific softening point of the thermoplastic adhesive material, the bonding strength of the adhesive layer 300 decreases rapidly, thereby enabling the separation of the dielectric ceramic layer 200 from the electrostatic chuck body 100.

[0104] Preferably, the specific range of the heating temperature needs to be specifically matched according to the specific chemical composition and thermophysical properties of the selected thermoplastic adhesive. For example, when using a specific formulation of thermoplastic adhesive with a softening point around 170 degrees Celsius, the heating temperature can be raised to between 210 and 230 degrees Celsius using a heating device.

[0105] In step S220, a reverse sliding force is applied horizontally to the dielectric ceramic layer 200 and the electrostatic chuck body 100, causing them to slide relative to each other and de-bond. Specifically, after the adhesive layer 300 is heated to a sufficiently softened state, its macroscopic interlaminar shear strength decreases sharply. At this time, the operator or a dedicated separation device applies opposite sliding forces horizontally to the dielectric ceramic layer 200 and the electrostatic chuck body 100, respectively. Under continuous horizontal shear stress, the damaged dielectric ceramic layer 200 and the underlying electrostatic chuck body 100 will slide relative to each other at the softened adhesive interface, thereby separating them and completing the de-bonding.

[0106] Furthermore, employing a horizontal reverse sliding force instead of a vertical prying or pulling force is crucial for ensuring non-destructive disassembly. Since both the electrostatic chuck body 100 and the dielectric ceramic layer 200 are special ceramic materials with high hardness but also high brittleness, directly applying vertical peeling stress can easily cause stress concentration at material edges or micro-defects, leading to cracking of the ceramic matrix. The horizontal sliding operation fully utilizes the high fluidity and extremely low shear resistance of the softening adhesive, allowing the separation stress to be evenly distributed across the entire bonding surface. This effectively prevents micro-cracks or structural damage to the electrostatic chuck body 100, which has embedded precision adsorption electrodes 120.

[0107] Preferably, after the dielectric ceramic layer 200 and the electrostatic chuck body 100 are relatively slid and separated, the softened adhesive layer 300 sandwiched between them and the adhesive retaining ring 500 pre-set around the internal channel will be exposed and removed together. This application can achieve the peeling of the core functional area with a low mechanical wear rate, which facilitates the subsequent cleaning of residual adhesive and the re-bonding of the new dielectric layer, avoiding the problem of traditional electrostatic chucks being completely scrapped due to inability to disassemble or requiring long-term polishing.

[0108] In step S230, a cleaning solvent is used to remove the thermoplastic adhesive remaining on the surface of the electrostatic chuck body 100;

[0109] Specifically, after decoupling the dielectric ceramic layer 200 from the electrostatic chuck body 100, softened adhesive residue remains on the exposed working surface of the electrostatic chuck body 100. The surface of the electrostatic chuck body 100 is washed with a specific cleaning solvent and then dried to remove the residual thermoplastic adhesive layer 300. This step uses the specific cleaning solvent to dissolve and peel off the residual thermoplastic adhesive, thereby exposing the original surface of the electrostatic chuck body 100.

[0110] Furthermore, the cleaning solvent can be selected based on the base resin component of the adhesive, for example, isopropanol or a special cleaning solvent can be used. Additionally, when the selected thermoplastic adhesive system has good compatibility with a specific solvent (e.g., cyclohexanone), cyclohexanone solvent can be used directly to clean and dry the surface of the electrostatic chuck body 100. Simultaneously, since auxiliary barrier components for preventing overflow are typically introduced in the early bonding process, the previously used retaining ring 500 and adhesive will be removed during the unbonding and subsequent cleaning steps to ensure the unobstructed flow of the internal process holes 160.

[0111] Preferably, the method of using a specific thermoplastic adhesive material in conjunction with a solvent for chemical cleaning offers significant maintenance and protection advantages compared to traditional thermosetting materials. If thermosetting resin is used as the adhesive material, after separating the dielectric layer ceramic 200, the cured residue adheres to the chuck body in solid form. This residue has stronger strength and solvent resistance than thermoplastic resin, making removal difficult. Forced mechanical scraping risks directly damaging the surface of the electrostatic chuck body 100, while solvent dissolution requires a long time. However, the adhesive removal method in this technical solution, based on the combination of thermoplastic properties and chemical dissolution, is completely non-destructive to the high-hardness ceramic substrate. This not only efficiently removes residues but also effectively avoids the process risk of damaging the surface of the electrostatic chuck body 100, restoring a clean, flat, and undamaged substrate interface for the subsequent high-strength assembly of the new dielectric layer.

[0112] In step S240, a replacement dielectric layer ceramic 200 is provided, and a thermoplastic adhesive is coated on the surface of the replacement dielectric layer ceramic 200 or the electrostatic chuck body 100. After heating, baking and alignment, the ceramic is bonded under heat and pressure in a vacuum environment. After cooling, the ceramic is rebonded to the electrostatic chuck body 100.

[0113] Furthermore, the selection of the above parameters depends on the specific working mechanism of the chuck. For example, regarding the selection of the target volume resistivity, if the original chuck operates based on the Johnson-Labec effect, the volume resistivity of the replacement dielectric layer ceramic 200 can be selected and controlled within a certain range. Between; if the original chuck operates based on pure Coulomb force, then a volume resistivity greater than 1 is selected. High-insulation ceramic. To ensure wafer adhesion, the working surface of the replacement dielectric layer ceramic 200 needs to be precision ground beforehand, preferably with its macroscopic surface flatness controlled within 5μm. Before assembly, the replacement dielectric layer ceramic 200 is cleaned and dried using a high-purity medium such as plasma water or deionized water.

[0114] Furthermore, the initial bonding manufacturing process is repeated, uniformly coating the surface of the replacement dielectric ceramic layer 200 or the cleaned electrostatic chuck body 100 with a thermoplastic adhesive. Subsequently, the component coated with adhesive undergoes a strictly temperature-controlled heating and baking process. This heating process removes organic solvents from the adhesive layer 300 to prevent the formation of microbubbles during subsequent bonding, and also allows the adhesive surface to reach a suitable yielding and softening state for subsequent bonding.

[0115] Preferably, after heat treatment, alignment is performed using bonding equipment to ensure that the 160 process holes, such as the pin holes and helium gas holes, are completely coaxially connected. In a vacuum microenvironment with the air purged, the electrostatic chuck body 100 and the replacement dielectric layer ceramic 200 are heated and subjected to a preset mechanical pressure for tight bonding. After the overall structure cools naturally to room temperature, the thermoplastic adhesive material cures, thus completing the reassembly of the new dielectric layer and the original electrostatic chuck body 100. This repair mechanism overcomes the shortcomings of traditional electrostatic chucks that require complete scrapping due to surface damage or excessive polishing. It allows the ceramic body with intact functional areas such as the embedded adsorption electrode 120 to be reused without damage, significantly improving the resilience of semiconductor equipment maintenance and greatly reducing long-term consumable costs for the production line.

[0116] In an exemplary embodiment, when an edge sealing adhesive layer 400 is applied to the edge of the electrostatic chuck to be repaired, the repair method further includes removing the edge sealing adhesive layer 400 from the edge of the electrostatic chuck before heating the electrostatic chuck to be repaired.

[0117] After the re-bonding with the electrostatic chuck body 100 is completed, the method further includes: re-applying an edge-sealing adhesive layer 400 to the outer edge of the adhesive layer 300 and allowing it to cure;

[0118] Furthermore, in the step of heating the electrostatic chuck to be repaired, the set temperature range for heating is higher than the softening point of the thermoplastic adhesive and lower than the heat resistance limit temperature of the internal structure of the electrostatic chuck body 100.

[0119] Specifically, when repairing an electrostatic chuck with an edge-sealing adhesive layer 400, the peripheral edge-sealing adhesive layer 400 must be removed first. Before heating the electrostatic chuck to be repaired, the outer edge-sealing adhesive layer 400 needs to be removed using mechanical methods or other suitable processes. This edge-sealing adhesive layer 400 has solidified during initial service and tightly covers the lateral section of the adhesive layer 300. If it is not removed beforehand, the high-strength solid edge-sealing adhesive layer 400 will act as a barrier when the adhesive layer 300 is softened by subsequent heating, severely hindering the relative lateral sliding between the dielectric ceramic layer 200 and the electrostatic chuck body 100. Therefore, removing it in advance is a key pretreatment step to ensure smooth and unobstructed subsequent dissolution and sliding operations.

[0120] Furthermore, after successfully completing a series of reassembly processes, including residual adhesive cleaning, providing a new dielectric layer, and high-voltage vacuum bonding, an exposed thermoplastic adhesive layer 300 lateral section is re-formed between the replacement dielectric ceramic layer 200 and the electrostatic chuck body 100. Therefore, it is necessary to reapply an edge-sealing adhesive layer 400 to the outer edge of the adhesive layer 300 and allow it to fully cure. For example, the reapplied edge-sealing adhesive layer 400 can be made of semiconductor-specific silicone material with excellent airtightness and corrosion resistance. This comprehensive edge protection effectively restores the airtightness of the electrostatic chuck adhesive layer 300, while effectively blocking the physical erosion and chemical degradation of the internal thermoplastic adhesive material by high-energy plasma or active ion gas in the reaction chamber, thereby ensuring the reliability of the electrostatic chuck in service.

[0121] Preferably, in the step of heating the electrostatic chuck to be repaired, the heating temperature is limited. This heating temperature must be configured above the softening point of the thermoplastic adhesive used to fully stimulate the thermal motion of the polymer chain segments, ensuring that the adhesive layer 300 transforms into a softened state with low shear resistance. Simultaneously, to avoid secondary damage, this temperature range is strictly limited to a range below the heat resistance limit of the internal structure of the electrostatic chuck body 100. The electrostatic chuck body 100 typically houses precision electrostatic adsorption electrodes 120 or sensing elements; excessive thermal stress can easily cause structural deformation or electrode failure. By controlling the heating temperature below the heat resistance limit of the internal structure of the electrostatic chuck body 100, while ensuring the smooth yielding and decoupling of the adhesive layer 300, thermal damage to the internal functional areas can be avoided, ensuring the reusability of the components.

[0122] Because the softening points of the adhesives used differ, the temperature and other parameters used in the specific implementation method may vary. The following formulation serves as an example: By mixing and grinding 60 parts by weight of cyclohexanone, 30 parts of copolymer PA resin, 2 parts of triphenyl phosphate, 3 parts of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide (EMIM-TFSI), 0.5 parts of silane coupling agent, 0.5 parts of phosphite antioxidant, and 0.5 parts of silicone leveling agent, an adhesive for bonding the dielectric ceramic layer 200 to the electrostatic chuck body 100 is obtained, with a softening point around 170℃.

[0123] Example 1:

[0124] An adhesive for bonding the dielectric ceramic layer 200 to the electrostatic chuck body 100 was prepared by mixing and grinding 60 parts by weight of cyclohexanone, 30 parts of copolymer PA resin, 2 parts of triphenyl phosphate, 3 parts of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide (EMIM-TFSI), 0.5 parts of silane coupling agent, 0.5 parts of phosphite antioxidant, and 0.5 parts of organosilicon leveling agent. The adhesive layer 300 formed by the adhesive prepared according to the above formulation has a volume resistivity at [value missing]. The range is specified. The electrostatic chuck is a JR type, 8 inches in size, with a dielectric layer volume resistivity of [value missing]. Left and right. The following method is used to achieve bonding between the dielectric ceramic layer 200 and the electrostatic chuck body 100:

[0125] S1: Clean the bonding surface between the electrostatic chuck body 100 and the dielectric ceramic layer 200.

[0126] S2: Attach a 100μm thick antistatic silicone rubber retaining ring 500 to the outer ring of the pin hole of the dielectric ceramic layer 200.

[0127] S3: Place the dielectric layer ceramic 200 on a spin coater, pour 20ml of adhesive evenly onto the surface of the dielectric layer ceramic 200, and spin coat at a rotation speed of 450rpm for 35s.

[0128] S4: Remove the dielectric layer ceramic 200 coated with adhesive, place it in a 120℃ oven and bake for 4 minutes. After removing it, place it in a 185℃ oven and bake for 5 minutes.

[0129] S5: Install and fix the electrostatic chuck body 100 onto the bonding machine base 900. The bonding machine uses the electrostatic chuck 600 for adsorption to adsorb the dielectric ceramic layer 200. The micro-motion stage and the pin hole are used to align the electrostatic chuck body 100 and the dielectric ceramic layer 200. They are bonded under a vacuum of less than 0.5 kPa. Then, the bonding machine heats the temperature to 185°C, applies 3 kN of pressure, holds the temperature and pressure for 3 minutes, and cools to room temperature to complete the bonding.

[0130] S6: Apply a ring of silicone to the outer edge of the adhesive layer 300 as an edge sealing layer 400, and let it air dry naturally until the edge sealing layer 400 is cured to obtain an electrostatic chuck with a replaceable dielectric layer.

[0131] The electrostatic chuck with a replaceable dielectric layer obtained in the above manner allows for the replacement of the dielectric ceramic layer 200 in the following way:

[0132] First, the sealing adhesive layer 400 is removed mechanically. Then, the electrostatic chuck to be repaired is placed on a heated workbench, and the temperature is raised to 220°C until the adhesive layer 300 between the dielectric ceramic 200 and the electrostatic chuck body 100 is completely softened. The dielectric ceramic 200 and the electrostatic chuck body 100 are then slid in opposite directions horizontally to separate them. The adhesive layer 300 and the retaining ring 500 are removed, completing the debonding process. The surface of the electrostatic chuck body 100 is cleaned with cyclohexanone solvent and dried to remove any remaining adhesive layer 300. This results in an independent and clean electrostatic chuck body 100. Using the above-described bonding method between the dielectric ceramic 200 and the electrostatic chuck body 100, a new, fully functional dielectric ceramic 200 can be replaced, achieving dielectric layer repair.

[0133] Example 2:

[0134] Compared to Example 1, Example 2 uses the same adhesive, dielectric ceramic 200, and electrostatic chuck body 100 bonding method to achieve bonding of the same type and size electrostatic chuck body 100 and dielectric ceramic 200. The difference is that in step S2, a thicker 200μm retaining ring 500 is used, and in step S3, 40ml of adhesive is poured in, while other parameters remain unchanged.

[0135] Comparative Example 1:

[0136] Compared to Example 1, Comparative Example 1 uses the same adhesive, dielectric ceramic layer 200, and electrostatic chuck body 100 bonding method to achieve bonding of the same type and size electrostatic chuck body 100 and dielectric ceramic layer 200. The difference is that the edge sealing adhesive layer 400 application operation in step S6 is not performed in this example.

[0137] Comparative Example 2:

[0138] Compared to Example 1, Comparative Example 2 uses the same bonding method between the dielectric ceramic 200 and the electrostatic chuck body 100 to achieve bonding of the same type and size of electrostatic chuck body 100 and dielectric ceramic 200. The difference lies in the use of a different type of adhesive, with the following composition: 60 parts cyclohexanone, 30 parts epoxy resin, 2 parts triphenyl phosphate, 3 parts 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide (EMIM-TFSI), 0.5 parts silane coupling agent, 0.5 parts phosphite antioxidant, and 0.5 parts silicone leveling agent. Only the thermoplastic copolymer PA resin in the composition is replaced with a thermosetting epoxy resin. When replacing the dielectric ceramic 200, it is not easy to separate the dielectric ceramic 200 from the electrostatic chuck body 100 using a simple heating method. After separating the dielectric ceramic 200, removing residual adhesive is also difficult, and there is a risk of damaging the surface of the electrostatic chuck body 100. Therefore, this scheme is not conducive to the replacement of the dielectric layer of the electrostatic chuck.

[0139] Comparative Example 3:

[0140] Compared to Example 1, Comparative Example 3 uses a similar adhesive and bonding method between the dielectric ceramic layer 200 and the electrostatic chuck body 100 to achieve bonding of the same type and size of electrostatic chuck body 100 and dielectric ceramic layer 200. The difference lies in the composition of the adhesive in this example: 60 parts cyclohexanone, 30 parts epoxy resin, 5 parts triphenyl phosphate, 0.5 parts silane coupling agent, 0.5 parts phosphite antioxidant, and 0.5 parts silicone leveling agent. No resistance modifier is added to this adhesive. The adhesive prepared according to the above formulation forms an adhesive layer 300 with a volume resistivity at [value missing]. The range.

[0141] The wafer adhesion force and helium leakage rate of the replaceable electrostatic chucks with dielectric layers prepared in the above embodiments and comparative examples were tested. The wafer adhesion force was obtained by directly measuring the maximum pulling force when the wafer separates from the chuck using a force sensor, and the helium leakage rate was measured by helium mass spectrometry leak detection. The following results were obtained:

[0142] Wafer adhesion force (gf / cm²) Helium leakage rate (sccm) Example 1 27.3 0.45 Example 2 12.7 0.7 Comparative Example 1 9.2 14.7 Comparative Example 2 20.6 1.2 Comparative Example 3 1.6 0.9

[0143] The results above show that: Example 2 increased the thickness of the adhesive layer 300, which is equivalent to increasing the thickness of the dielectric layer, significantly reducing the wafer adsorption force; Comparative Example 1 did not coat the outer ring of the adhesive layer 300 with the sealing adhesive layer 400, resulting in poor sealing performance, abnormally increased helium leakage rate, and consequently reduced wafer adsorption force, affecting the performance of the electrostatic chuck; Comparative Example 3 did not add a resistance modifier to the adhesive, so the volume resistivity of the adhesive layer 300 did not match that of the ceramic, making the adhesive layer 300 a high-resistivity layer in the new dielectric layer, blocking the necessary path of leakage current, and significantly reducing the wafer adsorption force of the electrostatic chuck.

[0144] It should be understood that the specific dimensions, shapes, materials, and structural layouts disclosed in this application are only used to explain and illustrate the technical solutions of this application, and are not intended to limit them. Those skilled in the art, after reading this application, can modify, replace, or alter the above details according to actual application needs without departing from the principles of this application; all such equivalent adjustments should fall within the protection scope of this application.

[0145] Although preferred embodiments of this application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.

[0146] Obviously, those skilled in the art can make various modifications and variations to the embodiments of this application without departing from the spirit and scope of the embodiments of this application. Therefore, if these modifications and variations to the embodiments of this application fall within the scope of the claims of this application and their equivalents, this application also intends to include these modifications and variations.

Claims

1. An electrostatic chuck with a replaceable dielectric layer, characterized in that, include: An electrostatic chuck body, wherein an adsorption electrode is embedded inside the electrostatic chuck body; A dielectric ceramic layer is disposed above the electrostatic chuck body to adsorb and support the wafer; An adhesive layer is disposed between the electrostatic chuck body and the dielectric ceramic layer, and the adhesive layer is formed by curing a thermoplastic adhesive; The thermoplastic adhesive has a softening point higher than the maximum operating temperature of the electrostatic chuck. The adhesive layer is configured to maintain a solid bond within a range not exceeding the maximum operating temperature, and to soften when heated to a temperature equal to or higher than the softening point of the thermoplastic adhesive, so that the dielectric ceramic layer can be separated from the electrostatic chuck body.

2. The electrostatic chuck with replaceable dielectric layer according to claim 1, characterized in that, The thermoplastic adhesive includes a base resin and a resistance modifier. The base resin is a thermoplastic composite material, and the resistance modifier is configured to adjust the volume resistivity of the adhesive layer so that the volume resistivity of the adhesive layer matches the volume resistivity of the dielectric ceramic layer.

3. The electrostatic chuck with replaceable dielectric layer according to claim 1 or 2, characterized in that, The upper surface of the electrostatic chuck body has a chamfer at the outer edge. The electrostatic chuck with replaceable dielectric layer also includes an edge sealing adhesive layer. The edge sealing adhesive layer is applied to the chamfer and covers the outer edge of the adhesive layer to block external plasma from eroding the adhesive layer.

4. The electrostatic chuck with replaceable dielectric layer according to claim 1, characterized in that, Both the electrostatic chuck body and the dielectric ceramic layer have interconnected process holes. A retaining ring is embedded between the electrostatic chuck body and the dielectric ceramic layer, and around the process holes. The thickness of the retaining ring is adapted to the thickness of the adhesive layer to prevent the thermoplastic adhesive from overflowing into the process holes.

5. A bonding method for an electrostatic chuck with a replaceable dielectric layer as described in any one of claims 1 to 4, characterized in that, Includes the following steps: Clean the surfaces of the electrostatic chuck body and the dielectric ceramic layer to be bonded; A thermoplastic adhesive is coated on the surface of the electrostatic chuck body or the dielectric ceramic layer; The component coated with the thermoplastic adhesive is heated and baked to evaporate the organic solvent in the thermoplastic adhesive and soften its surface to form an adhesive layer; In a vacuum environment, the electrostatic chuck body is aligned with the dielectric ceramic layer; The bonding process involves heating and applying pressure, followed by cooling to room temperature.

6. The bonding method according to claim 5, characterized in that, When a chamfer is provided at the outer edge of the upper surface of the electrostatic chuck body, after the bonding step of cooling to room temperature, the bonding method further includes: applying an edge-sealing adhesive layer to the outer edge of the adhesive layer and allowing it to cure; When process holes are formed in the electrostatic chuck body and the dielectric ceramic layer, the bonding method further includes attaching a retaining ring around the process hole before the step of applying the thermoplastic adhesive.

7. The bonding method according to claim 5, characterized in that, The heating and baking steps specifically include: The first stage of baking is performed at a temperature below the softening point of the thermoplastic adhesive to remove organic solvents. The second stage of baking is performed at a temperature higher than the softening point of the thermoplastic adhesive, so that the surface of the thermoplastic adhesive is softened.

8. The bonding method according to claim 5, characterized in that, Both the electrostatic chuck body and the dielectric ceramic layer are provided with alignment holes; the alignment step specifically includes: The dielectric ceramic layer is adsorbed using an electrostatic chuck for adsorption, and the electrostatic chuck for adsorption is provided with a pre-drilled hole. A vertically upward light source is provided below the electrostatic chuck body; Adjust the relative positions of the electrostatic chuck for adsorption, the dielectric ceramic layer, and the main body of the electrostatic chuck until light can pass through all the holes on the main body of the electrostatic chuck, the dielectric ceramic layer, and the electrostatic chuck for adsorption in sequence and be captured by the receiving device above. After confirming that the holes of the three are coaxial, the alignment is determined to be complete.

9. A method for repairing an electrostatic chuck with a replaceable dielectric layer as described in any one of claims 1 to 4, used for replacement when the dielectric layer is damaged, characterized in that, Includes the following steps: The electrostatic chuck to be repaired is heated until the temperature rises to equal or higher than the softening point of the thermoplastic adhesive, so that the thermoplastic adhesive reaches a softened state. A reverse sliding force is applied horizontally to the dielectric ceramic layer and the electrostatic chuck body, causing them to slide relative to each other and debond. Use a cleaning solvent to remove the residual thermoplastic adhesive from the surface of the electrostatic chuck body; A replacement dielectric layer ceramic is provided, and a thermoplastic adhesive is coated on the surface of the replacement dielectric layer ceramic or the electrostatic chuck body. After heating, baking and alignment, the ceramic is bonded under heat and pressure in a vacuum environment. After cooling, the ceramic is rebonded to the electrostatic chuck body.

10. The repair method according to claim 9, characterized in that, If an edge sealing adhesive layer is applied to the edge of the electrostatic chuck to be repaired, the repair method further includes removing the edge sealing adhesive layer at the edge of the electrostatic chuck before heating the electrostatic chuck to be repaired. After the re-bonding with the electrostatic chuck body is completed, the method further includes: reapplying an edge-sealing adhesive layer to the outer edge of the adhesive layer and allowing it to cure; Furthermore, in the step of heating the electrostatic chuck to be repaired, the set temperature range for heating is higher than the softening point of the thermoplastic adhesive and lower than the heat resistance limit temperature of the internal structure of the electrostatic chuck body.

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