Component of semiconductor manufacturing apparatus and method for manufacturing component of semiconductor manufacturing apparatus

Abstract

A component of a semiconductor manufacturing apparatus includes a substrate having a first surface and a second surface connected to the first surface, and a film containing aluminum hydroxide continuously disposed directly on the first surface and the second surface. The substrate contains aluminum. Furthermore, the substrate includes a space for liquid flow, the inner wall of which is directly disposed of the aluminum hydroxide film. Additionally, the substrate includes a space for mounting a heat source, the inner wall of which is directly disposed of the aluminum hydroxide film.

Description

Technical Field

[0001] One embodiment of the present invention relates to a component of a semiconductor manufacturing apparatus. Another embodiment of the present invention relates to a method for manufacturing a component of a semiconductor manufacturing apparatus. Background Technology

[0002] Semiconductor devices are devices that utilize the semiconductor properties of silicon and other materials. In recent years, semiconductor devices have been incorporated into almost all electronic devices, enabling control corresponding to the functions of each device. Semiconductor devices are constructed by stacking insulating and conductive films on a substrate such as a silicon wafer and patterning these films or substrates. For example, these films are stacked on the substrate using semiconductor manufacturing equipment capable of methods such as evaporation, sputtering, chemical vapor deposition (CVD), or chemical reactions of the substrate. These films or substrates are then patterned using semiconductor manufacturing equipment capable of performing photolithography. The photolithography process includes forming a photoresist on the films to be patterned, exposing the photoresist, forming a photoresist mask through development, partially removing the films through etching, and removing the photoresist mask.

[0003] Semiconductor manufacturing apparatuses include multiple components (components of the semiconductor manufacturing apparatus). For example, components of a semiconductor manufacturing apparatus include a stage (hereinafter referred to as a stage) for setting a substrate, an electrode section, a spray head, etc. The properties of the aforementioned film largely depend on the conditions for film formation, etching conditions, etc. One of these conditions is the voltage applied to the stage. With the miniaturization of semiconductor devices in recent years, the ratio (aspect ratio) of the aperture of the processed hole to the thickness of the processed film has been increasing. Therefore, for example, the voltage applied to the stage included in the etching apparatus has been increasing. Therefore, there is a need to improve the voltage withstand performance and insulation performance of the components included in the stage. Furthermore, the aforementioned film is sometimes deposited on a substrate by generating plasma, and sometimes etched by generating plasma. Therefore, there is a need to improve the plasma resistance of the components contained in the stage.

[0004] For example, the components included in the stage include a cooling plate, an electrostatic chuck, a heater, etc. For example, an electrostatic chuck for one of the purposes of suppressing the reduction of insulation is described in Patent Document 1, wherein an anodized film is formed on the surface of the substrate constituting the stage, and a boehm film is formed on the anodized film.

[0005] (Existing technical documents)

[0006] (Patent Documents)

[0007] Patent Document 1: Japanese Patent Application Publication No. 2005-57234 Summary of the Invention

[0008] (The problem that the invention aims to solve)

[0009] One objective of embodiments of the present invention is to provide a component of a semiconductor manufacturing apparatus capable of suppressing a decrease in insulation performance. Another objective of embodiments of the present invention is to provide a component of a semiconductor manufacturing apparatus capable of suppressing a decrease in withstand voltage characteristics. Another objective of embodiments of the present invention is to provide a method for manufacturing a component of a semiconductor manufacturing apparatus capable of suppressing a decrease in insulation performance. Finally, one objective of embodiments of the present invention is to provide a method for manufacturing a component of a semiconductor manufacturing apparatus capable of suppressing a decrease in withstand voltage characteristics.

[0010] (The measures taken to solve the problem)

[0011] One embodiment of the present invention relates to a semiconductor manufacturing apparatus for mounting a substrate, comprising: a substrate having a first surface and a second surface connected to the first surface; and a film containing aluminum hydroxide, which is continuously and directly disposed on the first surface and the second surface.

[0012] A method for manufacturing a component of a semiconductor manufacturing apparatus for mounting a substrate, according to one embodiment of the present invention, includes: providing a substrate having a first surface and a second surface connected to the first surface in a chamber capable of being heated and pressurized; supplying water or an aqueous solution into the chamber; heating and pressurizing the chamber to generate water vapor in the chamber; and continuously forming a film containing aluminum hydroxide on the first surface and the second surface.

[0013] One embodiment of the present invention relates to a method for manufacturing a component of a semiconductor manufacturing apparatus for mounting a substrate, comprising: providing a substrate having a first surface and a second surface connected to the first surface in a chamber capable of being heated and pressurized; supplying water vapor into the chamber; heating and pressurizing the chamber; and continuously forming a film containing aluminum hydroxide on the first surface and the second surface.

[0014] (The effect of the invention)

[0015] According to one embodiment of the present invention, a component of a semiconductor manufacturing apparatus capable of suppressing the degradation of insulation and withstand voltage performance is provided. Furthermore, according to another embodiment of the present invention, a method for manufacturing the component of a semiconductor manufacturing apparatus capable of suppressing the degradation of insulation and withstand voltage performance is provided. Attached Figure Description

[0016] Figure 1 A perspective view showing the structure of the stage according to the first embodiment of the present invention.

[0017] Figure 2This is a schematic diagram showing a cross-sectional view of the stage according to the first embodiment of the present invention.

[0018] Figure 3 To show that Figure 2 A schematic diagram of an enlarged cross-section of a portion of the stage shown.

[0019] Figure 4 This is a schematic diagram showing an enlarged cross-section of a portion of the stage of an existing example.

[0020] Figure 5 To show that Figure 2 A schematic diagram of an enlarged cross-section of a portion of the stage shown.

[0021] Figure 6 To show that Figure 2 A schematic diagram of an enlarged cross-section of a portion of the stage shown.

[0022] Figure 7 This is a schematic diagram illustrating a device for explaining a method of manufacturing a stage according to a first embodiment of the present invention.

[0023] Figure 8 A flowchart illustrating a method for manufacturing a stage according to a first embodiment of the present invention.

[0024] Figure 9 This is a schematic diagram illustrating a device for explaining a method of manufacturing a stage according to a first embodiment of the present invention.

[0025] Figure 10 This is a schematic diagram showing a cross-sectional view of a semiconductor manufacturing apparatus including a stage according to a second embodiment of the present invention.

[0026] Figure 11 This is a perspective view showing the structure of the spray head according to the third embodiment of the present invention.

[0027] Figure 12 To show Figure 11 A schematic diagram of a cross-section of the spray head along A1-A2.

[0028] Figure 13 To show Figure 11 A schematic diagram of a cross-section of the spray head along B1-B2.

[0029] Figure 14 This is a schematic diagram showing a cross-sectional view of a semiconductor manufacturing apparatus including a stage and a spray head according to the fourth embodiment of the present invention. Detailed Implementation

[0030] Hereinafter, a stage or a method for manufacturing a stage according to one embodiment of the present invention will be described with reference to the accompanying drawings. However, the present invention can be implemented in various ways without departing from its spirit and should not be construed as limited to the description of the embodiments illustrated below.

[0031] To make the description clearer, the accompanying drawings sometimes schematically show the width, thickness, shape, etc. of various parts compared to the actual form, but these are only examples and do not limit the interpretation of the invention. Furthermore, in this specification and the accompanying drawings, elements that have the same function as those already described in the drawings are labeled with the same reference numerals, and repeated descriptions are omitted.

[0032] In this specification and the accompanying drawings, the same reference numerals are used to uniformly represent multiple identical or similar structures, and hyphens and numbers are added after the reference numerals when they are represented separately.

[0033] In this specification, the words "first," "second," or "third" noted on each structure are convenient identifiers used to distinguish each structure, and have no further meaning unless otherwise specified.

[0034] In the following explanation, for ease of explanation, terms indicating direction such as "up" and "down" are sometimes used. The direction of gravity relative to the stage is "down," and the opposite is "up."

[0035] [1. First Implementation Method]

[0036] Reference Figures 1 to 9 As an example of a component of a semiconductor manufacturing apparatus, the stage 100 according to the first embodiment of the present invention will be described.

[0037] [1-1. Overview of the Stage]

[0038] Reference Figures 1 to 3 , Figure 5 and Figure 6 The general outline of the stage 100 will be described. Figure 1 A perspective view showing the structure of the stage 100. Figure 2 A schematic diagram showing a cross-section of the stage 100. Figure 3 This is a schematic diagram showing an enlarged cross-section of the periphery of the corner 101 of the stage 100. Figure 4 This is a schematic diagram showing an enlarged cross-section of the periphery of the corner 101 of the stage in the conventional example. Figure 5 and Figure 6 This is a schematic diagram showing an enlarged cross-section of the perimeter of space 160.

[0039] The stage 100 includes a laminated substrate 110 and an insulating film 150.

[0040] The laminated substrate 110 includes a first substrate 120, a second substrate 140, a space 160, and a through-hole 180. As an arbitrary structure, the laminated substrate 110 may include an opening 170 or a through-hole 180. For example, the first substrate 120 and the second substrate 140 are brazed together. Furthermore, the bonding method is not limited to brazing. Additionally, as an example, the laminated substrate 110 includes a structure that bonds two substrates (the first substrate 120 and the second substrate 140), but the laminated substrate 110 may also include a structure that bonds three or more substrates.

[0041] The first substrate 120 includes a first surface 122, a second surface 124, and a third surface 126. The third surface 126 is disposed between and connected to the first surface 122 and the second surface 124. For example, the third surface 126 has a C-shaped chamfer. The third surface 126 may also have an R-shaped chamfer with curvature. The second substrate 140 includes a fourth surface 142.

[0042] Space 160 is formed in one or both of the first substrate 120 and the second substrate 140. Space 160 can be a flow path for circulating a medium within the stage 100, or a groove for placing a heat source within the stage 100. Alternatively, space 160 can also be referred to as a hole, a connecting hole, etc. For example, the medium and heat source are used to control the temperature of the substrate placed on the stage 100. For example, the medium can be a liquid such as water, isopropanol, ethylene glycol, or silicone oil. The medium can be used to cool the stage 100 or to heat it. For example, the heat source is a sheath heater. The sheath heater has the function of generating heat by energizing it.

[0043] Furthermore, for example, space 160a in space 160, which corresponds to the inflow or outflow of a medium, or the insertion or removal port of a heat source, includes an inlet / outlet port 160e. Figure 2 The cross-section of the stage 100 shown reveals a space 160a containing an access hole 160e, but... Figure 2 The space 160a shown is just an example and is not limited to this. Figure 2 The example shown. Additionally... Figure 2 The inlet / outlet hole 160e shown is provided on the second substrate 140, but Figure 2 The location of the inlet / outlet 160e shown is only one example and is not limited to this. Figure 2The example shown illustrates this. For instance, the stage 100 includes two spaces 160a: a space 160a including an inlet / outlet port 160e, which corresponds to an inlet (e.g., an inflow or insertion port), and a space 160a including an outlet (e.g., an outflow or removal port). Furthermore, the number of spaces 160a including inlet / outlet ports 160e is not limited to two; it can be three or more, or it can be a single space (e.g., a structure where one end of a heat source and the other end are located in the same inlet / outlet port). Additionally, the spaces 160a containing inlet / outlet ports 160e can be placed in any location depending on the purpose or specifications of the stage 100.

[0044] The opening 170 is a hole for providing a temperature sensor on the bottom surface (fourth surface 142 side) of the laminated substrate 110. For example, the temperature sensor is a thermocouple. Additionally, Figure 2 The stage 100 shown includes one opening 170, but the stage 100 may also include multiple openings 170. Through the stage 100 including multiple openings 170, a membrane processing apparatus 200 including the stage 100 ( Figure 10 It can accurately obtain the temperature distribution of the substrate, thus enabling more precise control of the substrate temperature.

[0045] For example, the through-hole 180 functions as a flow path for allowing gas to flow through the gap between the stage 100 and the substrate placed on the stage 100. For example, the gas is a gas with high thermal conductivity, such as helium. Furthermore, Figure 2 The shown through-hole 180 is a single hole, but the stage 100 may also include multiple through-holes 180. Since the stage 100 includes multiple through-holes 180, the membrane processing apparatus 200 including the stage 100 (… Figure 10 This allows for efficient heat transfer to the substrate. Additionally, as an example, the through-hole 180 functions as a flow path for gas to flow through the gap between the stage 100 and the substrate placed on the stage 100. However, depending on the application or specifications of the stage 100, the through-hole 180 can be a flow path for solvent flow or a hole for providing a heat source. Furthermore, examples of stage 100s with through-holes 180 are shown, including flow paths for gas flow, flow paths for solvent flow, or structures for providing heat sources. However, the flow paths for gas flow, flow paths for solvent flow, or structures for providing heat sources are not limited to through-holes 180, and structures other than through-holes can be selected depending on the application or specifications of the stage 100.

[0046] The insulating film 150 is configured to cover and contact the first surface 122, the second surface 124, the third surface 126, and the fourth surface 142. Furthermore, the insulating film 150 is disposed on the inner wall 172 of the opening 170, the inner wall 182 of the through-hole 180, and the inner wall 162 of the space 160. Additionally, the insulating film 150 is also disposed on the inner walls 162 and 162e of the space 160a, which includes the inlet / outlet hole 160e. That is, the insulating film 150 is disposed not only on the surfaces of the laminated substrate 110, such as the first surface 122, the second surface 124, the third surface 126, and the fourth surface 142, but also on the inner walls of the space, the bottom or side walls, and the inner walls of flow paths not exposed on the surface.

[0047] The materials used for the first substrate 120 and the second substrate 140 are metals. For example, the materials used for the first substrate 120 and the second substrate 140 are aluminum alloys (A6061).

[0048] For example, the material used in the insulating film 150 can be a material that reacts with the materials used in the first substrate 120 and the second substrate 140 to satisfy the desired insulation properties, or a material that satisfies the desired voltage withstand characteristics, or a material that satisfies the desired corrosion resistance, or a material that satisfies the desired plasma resistance. For example, the material of the insulating film 150 used for the stage 100 contains aluminum hydroxide. For example, aluminum hydroxide contains aluminum hydroxyaluminate (AlO(OH)) as a metal hydroxide oxide. Aluminum hydroxyaluminate (AlO(OH)) is a so-called boehmite.

[0049] [1-2. Structure of corner 101 and space 160]

[0050] Reference Figures 3 to 6 The structure around the corner 101 of the stage 100 and around the space 160 of the stage 100 will be described. Descriptions will be made as needed. Figure 1 and Figure 2 The same or similar structures.

[0051] As described in “1-1”, the insulating film 150 containing boehmite is arranged to cover and contact the first surface 122, the second surface 124, the third surface 126, and the fourth surface 142. More detailed as follows... Figure 3 As shown, insulating films 150 are disposed on corner 101 (corner 101c-1) formed between the first surface 122 and the third surface 126, and on corner 101 (corner 101c-2) formed between the first surface 122 and the third surface 126. Additionally, although not shown in the figures, boundary regions are formed on the interconnected surfaces of the first substrate 120 and the interconnected surfaces of the second substrate 140.

[0052] In addition, such as Figure 5As shown, the insulating film 150 is disposed to cover and contact the inner walls 162 (inner walls 162r, 162l, 162u, and 162d) of the space 160. The first substrate 120 includes inner walls 162r, 162l, and 162u, and the second substrate 140 includes an inner wall 162d. The boundary region 103 of the space 160 includes the boundary between the first substrate 120 and the second substrate 140, includes the end of the space 160 side of the mating surface 144 of the first substrate 120 and the second substrate 140, and includes the boundary between the inner walls 162r and 162d. Therefore, the insulating film 150 is arranged to cover and contact the boundary region 103. Additionally, although not shown in the figure, the boundary between the inner walls 162l and 162d is also the boundary between the first substrate 120 and the second substrate 140, and is the boundary region 103 of the space 160.

[0053] In addition, such as Figure 6 As shown, space 160 can be formed by joining groove 160f formed in first substrate 120 and groove 160s formed in second substrate 140. Insulating film 150 is provided to cover and contact the inner walls 162 (inner walls 162r, 162l, 162u, and 162d) of space 160. Boundary region 105 includes the boundary of space 160 between first substrate 120 and second substrate 140. Specifically, boundary region 105 includes the end of the space 160 side of the joint surface 146 of first substrate 120 and second substrate 140, and includes the boundary between inner walls 162r and 162d. Although not shown in the figure, inner wall 162l, like inner wall 162r, includes the boundary region 105 between first substrate 120 and second substrate 140. Therefore, insulating film 150 is provided to cover and contact boundary region 105.

[0054] For example, the thickness of the laminated substrate 110 (first substrate 120 and second substrate 140) is approximately 30 mm. Additionally, for example, the thicknesses Tu, Tc, Ts, Tff, and Tsf of the insulating film 150 are 0.1 μm or more and 20 μm or less. The thicknesses Tu, Tc, Ts, Tff, and Tsf of the insulating film 150 of the stage 100 are approximately 5 μm. The thicknesses Tu, Tc, Ts, Tff, and Tsf of the insulating film 150 are sufficiently thinner than the thickness of the laminated substrate 110 (first substrate 120 and second substrate 140).

[0055] Here, refer to Figure 4The stage in the prior art will be described. For example, the first substrate 120 included in the stage in the prior art includes an anodized film 150p, which is formed on the first surface 122, corner 101c-1, second surface 124, corner 101c-2, and third surface 126. Furthermore, the anodized film 150p includes cracks (gaps) 105p. Since the anodized film 150p is formed vertically relative to each surface, cracks 105p are easily formed at corner 101p (corners).

[0056] The boehmite-containing insulating film 150 exhibits high continuity and strong adhesion with the first surface 122, corner 101c-1, second surface 124, corner 101c-2, and third surface 126. Consequently, gaps, such as cracks, are difficult to form on the first surface 122, corner 101c-1, second surface 124, corner 101c-2, and third surface 126 of the insulating film 150. Therefore, since the laminated substrates 110 (first substrate 120 and second substrate 140) are covered by the insulating film 150 without being exposed, the insulation performance of the laminated substrates 110 is higher than that of substrates containing cracks (gaps).

[0057] Furthermore, an insulating film 150 containing boehmite is also formed on the boundary regions 103 and 105. That is, the insulating film 150 containing boehmite can sufficiently cover the boundaries of the substrates. Additionally, for example, even if the boundary regions 103 and 105 include an offset at the junction between the first substrate 120 and the second substrate 140, the insulating film 150 containing boehmite can be formed to reflect this offset. That is, the insulating film 150 containing boehmite can be formed to sufficiently cover the offset at the junction of the substrates. Therefore, the insulating film 150 containing boehmite has high coverage of the laminated substrates 110 (first substrate 120 and second substrate 140).

[0058] Here, as an example of the measurement results, the results of the breakdown voltage and surface roughness measurement of the insulating film 150 are explained with reference to Tables 1 and 2. In the sample used for measurement, the boehm-containing insulating film 150 was formed on a substrate with an aluminum alloy (A6061) as the substrate. In contrast, in the conventional example (conventional example), the insulating film containing an anodized film was formed on a substrate with an aluminum alloy (A6061) as the substrate. As shown in Table 1, the breakdown voltage of the boehm-containing insulating film 150 is more than 5 times that of the conventional example (the insulating film containing anodized film). Therefore, the improved withstand voltage of the boehm-containing insulating film 150 can be confirmed. Furthermore, as shown in Table 2, the surface roughness of the boehm-containing insulating film 150 is approximately 1 / 4 that of the conventional example (the insulating film containing anodized film). Therefore, the improved surface uniformity or flatness of the boehm-containing insulating film 150 can be confirmed.

[0059] [Table 1]

[0060]

[0061] [Table 2]

[0062]

[0063] Furthermore, as an example of the measurement results, Table 3 illustrates the dependence of the breakdown voltage and surface roughness of the insulating film 150 on the preparation temperature (set temperature). In the sample of Example 1 used for the measurement, an insulating film 150 containing boehmite was formed on a substrate with an aluminum alloy (A6061) substrate using a steam process with a set temperature of 200 degrees Celsius and a set heating time of 24 hours. In the samples of Examples 2 and 3 used for the measurement, only the set temperature differed from that of Example 1; everything else was the same as that of Example 1. Specifically, the set temperatures for the samples of Examples 2 and 3 used for the measurement were 240 degrees Celsius and 280 degrees Celsius, respectively. As shown in Table 3, the higher the preparation temperature, the higher the withstand voltage (breakdown voltage); the lower the preparation temperature, the more uniform the surface. It can be considered that the surface roughness of the insulating film 150 shown in Table 3 is improved compared with the surface roughness of the existing example (insulating film including anodic oxide film). In addition, it can also be considered that, taking into account the effect of film thickness, the withstand voltage (breakdown voltage) of the insulating film 150 shown in Table 3 is improved compared with the breakdown voltage of the existing example (insulating film including anodic oxide film).

[0064] [Table 3]

[0065]

[0066] As described above, the stage 100 includes a first surface 122, corner 101c-1, second surface 124, corner 101c-2, and third surface 126, a space 160, a through hole 180, and an opening 170, all densely formed from a boehmite-containing insulating film 150. Furthermore, the stage 100 includes boundary regions 103 and 105 where the boehmite-containing insulating film 150 is densely formed. That is, the surface of the laminated substrate 110 is densely covered by the boehmite-containing insulating film 150 without cracks (gaps), thereby suppressing the exposure of the laminated substrate 110 (first substrate 120 and second substrate 140). As a result, the insulation, voltage withstand properties, corrosion resistance, and plasma resistance of the stage 100 are improved. Additionally, the insulation, voltage withstand properties, corrosion resistance, and plasma resistance of the offset portion at the junction of the first substrate 120 and the second substrate 140 are improved. Furthermore, due to the high flatness of the insulating film 150, the contact area between the insulating film 150 and the laminated substrate 110 is increased. As a result, when the laminated substrate 110 is heated or cooled, the thermal conductivity from the laminated substrate 110 to the insulating film 150 from the stage 100 is improved.

[0067] [1-3. Construction of Stage 100]

[0068] Reference Figures 7 to 9 The manufacturing method of the stage 100 will be explained. Figure 7 This is a schematic cross-sectional view of a film-forming apparatus 300 used to illustrate the manufacturing method of the stage 100. Figure 8 A flowchart illustrating the manufacturing method of the stage 100. Figure 9 This is a schematic cross-sectional view showing a film-forming apparatus 300 used to illustrate the manufacturing method of the stage 100. Descriptions are provided as needed. Figures 1 to 6 The same or similar structure.

[0069] First, refer to Figure 7 The structure of the film-forming apparatus 300 will be described below. The film-forming apparatus 300 includes a first chamber 310, a second chamber 340, and a control circuit 360.

[0070] The first chamber 310 provides space for heating or pressurizing the second chamber 340. Specifically, the first chamber 310 includes a cover 312, a container 314, an exhaust device 324, an inlet pipe 326, a valve 328, a stage 320, and a heater 322. Furthermore, the first chamber 310 includes an upper space 316 above the stage 320 and a lower space 318 below the stage. The cover 312 is closable and can be installed on the container 314, thereby allowing the first chamber 310 to be sealed. The exhaust device 324 is connected to the container 314. For example, the exhaust device 324 can exhaust gases such as air and water vapor from the upper space 316, setting the first chamber 310 to a reduced-pressure atmosphere. The inlet pipe 326 is connected to the container 314. The inlet pipe 326 can introduce gas into the upper space 316 via the valve 328. For example, by introducing gas into the upper space 316, the upper space 316 can be set to a high-pressure atmosphere. The stage 320 is mounted on the container 314, dividing the space inside the container 314 into an upper space 316 and a lower space 318, and is configured to accommodate a second chamber 340. The heater 322 is disposed in the lower space 318.

[0071] The second chamber 340 provides space for forming a predetermined film on the stage 100. Specifically, the second chamber 340 includes a cover 342, a container 344, a stage 350, and an exhaust device 352. Furthermore, the second chamber 340 includes a space 346. The cover 342 is closably mounted on the container 344, thereby allowing the second chamber 340 to be sealed. The cover 342 contacts the container 344 to form the space 346. The exhaust device 352 is connected to the container 344. For example, the exhaust device 352 can exhaust air, water vapor, etc., from the space 346 and establish a reduced-pressure atmosphere within the space 346. The stage 350 is mounted in the space 346. The stage 350 includes a mesh or lattice structure. During the film formation of the insulating film 150, a laminated substrate 110 is disposed on the stage 350, and water or an aqueous solution is supplied to the space 346. For example, the method of manufacturing the stage 100 includes supplying pure water 354, which is an example of water or an aqueous solution, to the space 346.

[0072] Furthermore, the water or aqueous solution may contain additives. For example, additives may be surfactants, triethanolamine, etc. For instance, when the method of manufacturing the stage 100 includes supplying water containing a surfactant to the space 346, the surface tension of the water is reduced by the surfactant, thus the boehmite-containing insulating film 150 is uniformly formed on the laminated substrate 110. Additionally, for example, when the method of manufacturing the stage 100 includes supplying water containing triethanolamine to the space 346, the pH of the water remains weakly alkaline, therefore, the boehmite-containing insulating film 150 can be formed on the laminated substrate 110 faster than using a manufacturing method without triethanolamine.

[0073] Additionally, although not shown in the figures, the second chamber 340 may include a water or aqueous solution supply pipe capable of supplying water or aqueous solution to space 346 via the first chamber 310, and a valve connected to the supply pipe. When the valve is open, water or aqueous solution is supplied to space 346 via the first chamber 310; when the valve is closed, the supply of water or aqueous solution to space 346 is stopped. By closing the valve, backflow of water or aqueous solution into the supply pipe can be suppressed.

[0074] Additionally, although omitted in the figure, the second chamber 340 may also include a steam spray device having a steam spray pipe capable of spraying water vapor into the space 346 via the first chamber 310 and supplying water vapor. Alternatively, high-pressure water vapor generated by other equipment may be introduced directly without passing through the first chamber 310. The steam spray device may include a valve connected to the steam spray pipe. Similar to a water or aqueous solution supply pipe, when the valve is open, water vapor is supplied to the space 346 via the first chamber 310; when the valve is closed, the supply of water vapor to the space 346 is stopped. By closing the valve, backflow of water vapor into the steam spray pipe can be suppressed.

[0075] For example, the control circuit 360 includes a CPU, memory, relay circuit, timer, etc. For example, a user can operate the control circuit 360 to set the temperature, heating time, pressure, pressurization time, or depressurization time of the first chamber 310 or the second chamber 340. The control circuit 360 can control the first chamber 310 or the second chamber 340 according to this setting. The control circuit 360 is connected to the heater 322. The control circuit 360 can control the heating of the heater 322 based on the set temperature and heating time. By controlling the heater 322 through the control circuit 360, the first chamber 310 can be heated. Furthermore, although not shown in the figure, pressure gauges and thermocouples are installed in the first chamber 310 and the second chamber 340 to monitor the air pressure and temperature. The pressure gauges and thermocouples are connected to the control circuit 360, which can monitor and store the pressure and temperature.

[0076] Additionally, although the illustration is omitted, the control circuit 360 can also be connected to the exhaust devices 324 and 352 to automatically control the opening and closing of the valves included in the exhaust devices 324 and 352. For example, the control circuit 360 can control the opening and closing of the valves and control the pressure in the first chamber 310 or the second chamber 340 according to the set pressure and pressurization time.

[0077] Additionally, the film-forming apparatus 300 includes a control circuit 360, but the number of control circuits 360 is not limited to one. For example, the film-forming apparatus 300 may include three control circuits that control the heater 322, the exhaust device 324, and the exhaust device 352 respectively. By controlling the heater 322, the exhaust device 324, and the exhaust device 352 with different control circuits, it is possible to set the temperature, heating time, pressure, pressurization time, or depressurization time more precisely.

[0078] Furthermore, the film-forming apparatus 300 includes a first chamber 310 and a second chamber 340, but the number of chambers is not limited to two. For example, as long as the film-forming apparatus 300 includes a structure capable of forming an insulating film 150 containing boehmite on the laminated substrate 110 by a water vapor process described later, the number of chambers can also be one (e.g., the first chamber 310). When the film-forming apparatus 300 includes one chamber, the manufacturing method of the stage 100 requires fewer steps than when the film-forming apparatus 300 includes two chambers. Therefore, when the film-forming apparatus 300 includes one chamber, the manufacturing method of the stage 100 can be simplified compared to when the film-forming apparatus 300 includes two chambers.

[0079] Next, refer to Figures 7 to 9The manufacturing method of the stage 100 will be described. For example, the manufacturing method of the stage 100 includes steps S110 to S130.

[0080] When the stage 100 is fabricated, the laminated substrate 110 is placed on the stage 350 (step S110). Furthermore, in step S110, pure water 354 is supplied to the space 346. The pure water 354 is supplied to the space 346 until it no longer contacts the laminated substrate 110. Additionally, in step S110, the second chamber 340 and the first chamber 310 are sealed.

[0081] Next, the first chamber 310, the second chamber 340, or the contents of the first chamber 310 or the second chamber 340 are heated and pressurized (step S120). For example, the control circuit 360 controls the heater 322 according to the set temperature to heat the first chamber 310 or the second chamber 340, and heats and boils the pure water 354 in the second chamber 340 to generate water vapor 356 in the space 346. Figure 9 For example, in this case, the valves (not shown) of the exhaust devices 352 and 324 are closed to allow pressurization in the second chamber 340. When the pressure and temperature of the second chamber 340 (space 346) reach the set pressure and temperature, the control circuit 360 controls the pressure and temperature in the first chamber 310 or the second chamber 340 to be maintained at the set pressure and temperature based on pressure gauges and thermocouples, etc.

[0082] Here, for example, the set temperature can be above 130 degrees Celsius and below 320 degrees Celsius, preferably above 250 degrees Celsius and below 300 degrees Celsius; the set heating time can be above 10 minutes and below 72 hours; and the set pressure can be above 0.2 MPa and below 12.4 MPa. As an example, in the manufacturing method of the stage 100, the set temperature is 280 degrees Celsius, the set heating time is 24 hours, and the set pressure is 7 MPa. For example, the manufacturing method of the stage 100 may include heating pure water to form a boehmite membrane with good film quality over a longer period of time, or it may include introducing preheated water vapor into the second chamber 340 to form a boehmite membrane with good film quality in a shorter period of time.

[0083] Next, an insulating film 150 containing boehmite is formed on the laminated substrates 110 (first substrate 120 and second substrate 140) (step S130). For example, Figure 9 The area 370 shown is the area where the corner of the first substrate 120 is enlarged. Additionally, Figure 9Region 380 shown is the region that expands space 160. As shown in regions 370 and 380, water vapor 356 fills the periphery of the inner walls 162 (inner walls 162r, 162l, 162u, and 162d) of the first surface 122, the second surface 124, the third surface 126, and space 160. Furthermore, the water vapor reacts with the aluminum on each surface, producing an insulating film 150 containing boehmite (aluminum hydroxide) on each surface (see reference). Figure 3 and Figure 5 ).

[0084] Step S130 includes forming an insulating film 150 comprising boehmite on the fourth surface 142. Since the stage 350 has a mesh or lattice-like structure, water vapor 356 can enter between the fourth surface 142 (the surface in contact with the stage 350) of the second substrate 140 and the stage 350. Therefore, an insulating film 150 comprising boehmite is formed on the fourth surface 142.

[0085] Thus, the stage 100 is manufactured. Furthermore, the control circuit 360 controls the heater 322, the exhaust device 352, and the exhaust device 324 based on set heating time, pressurization time, or depressurization time. For example, the manufacturing of the stage 100 is completed when the temperature and pressure of the first chamber 310 and the second chamber 340 return to near a steady state.

[0086] As explained above, by using this manufacturing method to manufacture the stage 100, the surface of the laminated substrate 110 can be densely covered with an insulating film 150 containing boehmite and free of cracks (gaps). The manufacturing method of the stage 100 includes forming the insulating film 150 containing boehmite and free of cracks (gaps) on the laminated substrate 110 using water vapor. The manufacturing method of the stage 100 is sometimes referred to as a steam process.

[0087] For example, refer to Figure 4 The anodic oxide film 150p of the stage in the existing example described is formed using acid, thus requiring carbon dioxide removal and waste liquid treatment, making the cleaning of the manufacturing process for forming the anodic oxide film 150p difficult. Furthermore, in the space 160 and through-hole 180 ( Figure 2 ) and opening 170 ( Figure 2 It is difficult to form the anodic oxide film 150p of the stage in the existing example on the inner or side walls of narrow spaces, the inner walls of enclosed spaces, etc.

[0088] On the other hand, since the manufacturing method of the stage 100 uses water vapor, the manufacturing process can be made cleaner.

[0089] Furthermore, since the stage 100 is manufactured using water vapor, water vapor can enter the space 160 and the through hole 180. Figure 2) and opening 170 ( Figure 2 As a result, the manufacturing method of the stage 100 includes forming the insulating film 150 of the stage 100 into spaces, grooves, holes, through holes, etc., which are difficult to form anodized films as in conventional examples. Therefore, the insulating film 150 containing boehmite has high continuity and tightness with the spaces 160, through holes 180 and openings 170, and it is difficult for cracks (gap) to form in the spaces 160, through holes 180 and openings 170.

[0090] Alternatively, the insulating film 150, which contains boehmite and is free of cracks (gaps), can also be polished by sandblasting. The insulating film 150 is planarized by polishing. For example, by planarization, the contact area between the stage 100 and the substrate when the substrate (silicon wafer, semiconductor wafer, etc.) is placed on the stage 100 is increased. As a result, the thermal conductivity from the stage 100 to the substrate is improved.

[0091] [2. Second Implementation]

[0092] Reference Figure 10 The structure of a semiconductor manufacturing apparatus according to a second embodiment of the present invention will be described below. The semiconductor manufacturing apparatus includes a stage 100. For example, the semiconductor manufacturing apparatus is a film processing apparatus 200. The film processing apparatus 200 is a so-called etching apparatus. Additionally, refer to... Figure 10 The structure of the membrane processing apparatus 200 described is an example, and the structure of the membrane processing apparatus 200 is not limited to this. Figure 10 The structure shown. Furthermore, the film processing apparatus 200 is not limited to an etching apparatus. In the description of the film processing apparatus 200, references... Figures 1 to 9 The same or similar structures should be described as needed.

[0093] Figure 10 This is a schematic cross-sectional view of the film processing apparatus 200. The film processing apparatus 200 can perform dry etching on various films. The film processing apparatus 200 includes a chamber 202. The chamber 202 provides space for etching films such as conductors, insulators, or semiconductors formed on a substrate.

[0094] An exhaust device 204 is connected to the chamber 202. The exhaust device 204 can set the chamber 202 to a reduced pressure atmosphere. An inlet pipe 206 is provided in the chamber 202. The inlet pipe 206 can introduce a reaction gas for etching into the chamber 202 via a valve 208. For example, the reaction gas is a fluorinated organic compound, such as carbon tetrafluoride (CF4), octafluorocyclobutane (c-C4F8), decafluorocyclopentane (c-C5F10), hexafluorobutadiene (C4F6), etc. Alternatively, as an arbitrary configuration, a helium inlet pipe can also be provided in the chamber 202. For example, the helium inlet pipe can allow helium to flow through the gap between the stage 100 and the substrate placed on the stage 100 via the through hole 180 described in "1-1". As a result, the film processing apparatus 200 containing the helium inlet pipe can efficiently transfer the heat energy of the stage 100 to the substrate.

[0095] A microwave source 212 is positioned at the top of the chamber 202 via a waveguide 210. The microwave source 212 includes an antenna and other components for supplying microwaves. For example, the microwave source 212 can output high frequencies such as 2.45 GHz microwaves and 13.56 MHz radio frequency (RF). The microwaves generated by the microwave source 212 propagate through the waveguide 210 to the top of the chamber 202 and are introduced into the chamber 202 through a window 214 containing quartz, ceramic, or the like. The reactive gas is plasma-enhanced by the microwaves, and the film is etched by electrons, ions, free radicals, and other components contained in the plasma.

[0096] A stage 100 for mounting the substrate is disposed in the lower part of the chamber 202. A power supply 224 is connected to the stage 100. A voltage equivalent to high-frequency power is applied to the stage 100, forming a microwave-based electric field in a direction perpendicular to the surface of the stage 100 and the surface of the substrate. Magnets 216, 218, and 220 are disposed in the upper part or on the side of the chamber 202. Magnets 216, 218, and 220 can be permanent magnets or electromagnets with electromagnetic coils. Through magnets 216, 218, and 220, a magnetic field component parallel to the surface of the stage 100 and the substrate is formed. Through cooperation with the microwave-based electric field, electrons in the plasma resonate under the Lorentz force and are bound to the stage 100 and the surface of the substrate. As a result, a high-density plasma is generated on the surface of the substrate.

[0097] For example, if the stage 100 is equipped with a sheath heater, the heater power supply 230 for controlling the sheath heater is connected to the stage 100. As an optional configuration, a power supply 226 for an electrostatic chuck used to fix the substrate to the stage 100, a temperature controller 228 for controlling the temperature of the medium circulating inside the stage 100, and a rotation control device (not shown) for rotating the stage 100 can also be connected to the stage 100. For example, by using the temperature controller 228, a temperature-controlled medium can be allowed to flow into the space 160, thereby controlling the temperature of the stage 100.

[0098] The film processing apparatus 200 according to the second embodiment includes a stage 100. As a result, the film processing apparatus 200 can uniformly heat the substrate and precisely control the heating temperature. Consequently, by using the film processing apparatus 200, various films disposed on the substrate can be uniformly etched. Furthermore, due to the excellent insulation properties of the stage 100, the voltage withstand capability of the film processing apparatus 200 is improved relative to the voltage applied to the substrate. As a result, by using the film processing apparatus 200, high aspect ratio contacts can be formed on the substrate, and high aspect ratio films can be formed on the substrate. In addition, the film processing apparatus 200, including the stage 100 with excellent insulation and voltage withstand capability, has excellent long-term reliability, thus reducing the frequency of user maintenance of the film processing apparatus 200.

[0099] [3. Third Implementation Method]

[0100] Reference Figures 11 to 13 As an example of a semiconductor manufacturing apparatus, the spray head 400 according to the third embodiment of the present invention will be described. Figure 11 A perspective view showing the structure of the spray head 400. Figure 12 This is a schematic diagram showing a cross-section of the spray head 400 along A1-A2. Figure 13 This is a schematic diagram showing a cross-section of the spray head 400 along B1-B2. Describe as needed... Figures 1 to 10 The same or similar structure.

[0101] For example, spray head 400 is a semiconductor manufacturing component used to inject process gases into the interior of a semiconductor manufacturing apparatus.

[0102] like Figures 11 to 13 As shown, the spray head 400 includes a laminated substrate 405 and an insulating film 150. The laminated substrate 405 includes a structure in which a first substrate 410, a second substrate 420, and a third substrate 430 are laminated. For example, the first substrate 410, the second substrate 420, and the third substrate 430 are bonded together by diffusion bonding.

[0103] like Figure 12 and Figure 13As shown, the first substrate 410 includes a first surface 415a, a second surface 415b opposite to the first surface 415a, a third surface 415c, and a fourth surface 415d. The fourth surface 415d is disposed connected to the first surface 415a and the third surface 415c, and the third surface 415c is in contact with the second surface 415b. For example, the fourth surface 415d has a C-shaped chamfer. The fourth surface 415d may also have an R-shaped chamfer with curvature. Specifically, the fourth surface 415d has the same shape as the third surface 126 (see reference 126) in the first embodiment. Figure 2 and Figure 3 The same structure. Although detailed illustrations are omitted here, it is similar to the corner 101c-1 of the first embodiment (see reference). Figure 3 The same corner portion is provided between the first surface 415a and the fourth surface 415d, and is similar to the corner portion 101c-2 involved in the first embodiment (see reference). Figure 3 The same corner is set between the fourth face 415d and the third face 415c.

[0104] Additionally, the first substrate 410 includes a plurality of inlet / outlet holes 411 and a plurality of spaces 413. The plurality of inlet / outlet holes 411 are openings from the first surface 415a, and the plurality of spaces 413 communicate with the inlet / outlet holes 411. The plurality of spaces 413 includes a space 413a and a plurality of spaces 413b formed to surround the space 413a. Although not shown, spaces 413a and 413b have annular groove shapes. Spaces 413a and 413b communicate within the first substrate 410, and adjacent spaces 413b among the plurality of spaces 413b communicate within the first substrate 410. The plurality of inlet / outlet holes 411 extend from the first surface 415a to the second surface 415b via the plurality of spaces 413.

[0105] The second substrate 420 includes a first surface 425a, a second surface 425b opposite to the first surface 425a, and a third surface 425c. The third surface 425c is in contact with the first surface 425a and the second surface 425b. The first surface 425a is bonded to the second surface 425b.

[0106] Additionally, the second substrate 420 includes a plurality of inlet / outlet holes 421, a plurality of spaces 423, and an inlet / outlet hole 426. The plurality of inlet / outlet holes 421 are formed from a first surface 425a, and the inlet / outlet holes 426 are formed from a second surface 425b. The plurality of spaces 423 communicate with the inlet / outlet holes 421 and 426. Furthermore, each of the plurality of inlet / outlet holes 421 communicates with a space 413b. Although not shown, the plurality of spaces 423 are radial grooves formed by the intersection of a plurality of straight grooves. The space 423 of one of the grooves forming the straight grooves connects to the through holes 421a and 412b located furthest from each other. The plurality of inlet / outlet holes 421 are connected to the inlet / outlet hole 426 via the plurality of spaces 413.

[0107] The third substrate 430 includes a first surface 435a, a second surface 435b opposite to the first surface 435a, a third surface 435c, and a fourth surface 435d. The fourth surface 435d is connected to the second surface 435b and the third surface 435c, and the third surface 435c is in contact with the first surface 435a. For example, the fourth surface 435d has the same structure as the fourth surface 415d, and has a C-shaped chamfer. The first surface 435a is joined to the second surface 425b.

[0108] Additionally, the third substrate 430 includes an access hole 431. The access hole 431 is formed by extending from the first surface 435a to the second surface 435b. Furthermore, the access hole 431 communicates with the access hole 426.

[0109] Therefore, the laminated substrate 405 includes a structure comprising multiple inlet / outlet holes 411, multiple spaces 413, multiple inlet / outlet holes 421, spaces 423, inlet / outlet holes 426, and interconnected inlet / outlet holes 431. The multiple inlet / outlet holes 411, multiple spaces 413, multiple inlet / outlet holes 421, spaces 423, inlet / outlet holes 426, and inlet / outlet holes 431 form a flow path for allowing the medium to flow within the spray head 400. Similar to space 160, spaces 413 and 423 can also be referred to as holes, connecting holes, etc. For example, the medium is a process gas.

[0110] The insulating film 150 is configured to cover and contact the first surface 415a, the third surface 415c, the fourth surface 415d, the third surface 425c, the fourth surface 435d, the third surface 435c, and the second surface 435b. Additionally, the insulating film 150 is disposed on the inner walls 412 of the plurality of inlets / outlets 411, the inner walls 414 (e.g., inner walls 414a and 414b) of the plurality of spaces 413, the inner walls 422 (e.g., inner walls 422a and 422b) of the plurality of inlets / outlets 421, the inner walls 424 of the plurality of spaces 423, the inner wall 427 of the inlet / outlet 426, and the inner wall 432 of the inlet / outlet 431. That is, the insulating film 150 is not only provided on the surface of the laminated substrate 405 such as the first surface 415a, the third surface 415c, the fourth surface 415d, the third surface 425c, the fourth surface 435d, the third surface 435c and the second surface 435b, but also on the inner wall of the flow path and the inner wall of the inlet and outlet hole and the inner wall of the space, which are not exposed on the surface.

[0111] Additionally, although the illustrations are omitted, the plurality of spaces 413 and the plurality of spaces 423 contain the same boundary regions as space 160. For example, the boundary region of space 413a may include the boundary between the first substrate 410 and the second substrate 420, and the boundary of the end (inner wall 414a and first surface 425a) of the space 413 side of the joint surface of the first substrate 410 and the second substrate 420.

[0112] The materials used in the first substrate 410, the second substrate 420 and the third substrate 430 are the same as those used in the first substrate 120 and the second substrate 130.

[0113] Furthermore, the insulating film 150 in the spray head 400 has the same structure as the insulating film 150 in the stage 100. For example, the material of the insulating film 150 used in the spray head 400 is boehmite.

[0114] For example, after forming spaces 413 and 423 and inlet / outlet holes 411, 421, 426 and 431, the first substrate 410, the second substrate 420 and the third substrate 430 are bonded together by diffusion bonding. In addition, after bonding, an insulating film 150 is formed on the bonding substrate 405 by the manufacturing method described in "1-3. Manufacturing of stage 100".

[0115] Alternatively, after forming spaces 413 and 423, and access holes 411, 421, 426 and 431, and before joining, insulating films 150 can be formed in the first substrate 410, the second substrate 420 and the third substrate 430 by the manufacturing method described in "1-3. Manufacturing of Stage 100". In this case, the insulating films 150 formed on the second surface 415b of the first substrate 410, the first surfaces 425a and 425b of the second substrate 420, and the first surface 435a of the third substrate 430 are ground and removed before joining the substrates.

[0116] Additionally, as an example, the laminated substrate 405 includes a structure in which three substrates are bonded, but the laminated substrate 405 may also include a structure in which two substrates are bonded, similar to the laminated substrate 110, or it may include a structure in which four or more substrates are bonded.

[0117] In the manufacturing process of the spray head, when perforation is performed after bonding multiple substrates, chips may sometimes fall into the openings and grooves, or burrs may be generated. For example, when using a spray head manufactured in this way, these chips or burrs may be released to the outside along with the reactive gases. As a result, the film formed using this spray head may suffer from poor film formation. On the other hand, the spray head 400 according to the third embodiment is manufactured by bonding the substrates together by diffusion bonding after the inlet and outlet holes and spaces are formed on each substrate, thus suppressing the generation of chips and burrs. As a result, the spray head 400 according to the third embodiment includes a structure that can suppress the occurrence of poor film formation.

[0118] Additionally, for example, the spray head 400 described above can allow the medium to be introduced from the inlet / outlet hole 431, which serves as the medium inlet, and to flow into the flow path (space 413 and space 423, etc.), and sprayed out from the multiple inlet / outlet holes 411, which serve as the medium outlet.

[0119] Furthermore, as explained above, the spray head 400 includes a structure in which an insulating film 150 is formed on the surface of the laminated substrate 405, the inner wall of the inlet / outlet holes within the laminated substrate 405, and the inner wall of the space. As a result, the spray head 400 can achieve the same functional effect as the stage 100.

[0120] In addition, semiconductor manufacturing components such as the stage 100 and spray head 400 that include flow paths are sometimes referred to as flow path boards.

[0121] [4. Fourth Implementation Method]

[0122] Reference Figure 14 The structure of a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention will be described below. The semiconductor manufacturing apparatus according to the fourth embodiment includes a stage 100 and a spray head 400. For example, the semiconductor manufacturing apparatus is a chemical vapor deposition (CVD) apparatus 500. (See reference...) Figure 14 The structure of the CVD apparatus 500 described is an example, and the structure of the CVD apparatus 500 is not limited to this. Figure 14 The structure shown. In the description of the CVD apparatus 500, references are made as needed. Figures 1 to 13 Explain structures that are the same as or similar to those described.

[0123] Figure 14 This is a schematic cross-sectional view of the CVD apparatus 500. The CVD apparatus 500 includes a chamber 502. The chamber 502, while introducing process gases (also called reactive gases), causes the reactive gases to undergo a chemical reaction, providing space for the chemical formation of various films on the substrate. Similar to the stage 100 and the spray head 400, an insulating film 150 can be formed on the inner wall of the chamber 502.

[0124] An exhaust device 504 is connected to chamber 502. The exhaust device 504 reduces the pressure within chamber 502. An inlet pipe 506 is disposed within chamber 502. Like the stage 100 and spray head 400, the exhaust device 504 and inlet pipe 506 can form an insulating membrane 150 on their respective inner walls. Spray head 400 is disposed at the upper part of chamber 502. The inlet pipe 506 can supply the reactive gas for membrane formation to the spray head 400 via valve 508. The reactive gas is introduced through inlet / outlet holes 431 of the spray head 400, which serve as the inlet for the reactive gas and are connected to the inlet pipe 506. The reactive gas flows through flow paths within the spray head 400 (inlet / outlet holes 426, space 423, inlet / outlet holes 421, space 413, etc.) and is ejected into chamber 502 from multiple inlet / outlet holes 411, which serve as the outlet for the medium. The reactive gas can be various gases, depending on the membrane being manufactured. Furthermore, the reactant gas can be a gas at room temperature or a liquid. For example, the reactant gas can be silane, dichlorosilane, tetraethoxysilane, tungsten fluoride, or trimethylaluminum. Thin films of silicon, silicon oxide, or silicon nitride can be formed using silane, dichlorosilane, or tetraethoxysilane. Additionally, by using tungsten fluoride or trimethylaluminum, thin films of tungsten, aluminum, or aluminum oxide, or metal oxides, can be formed.

[0125] A stage 100 for mounting a substrate is disposed in the lower part of the chamber 502. A high-frequency power supply 524 is connected to the stage 100 and the spray head 400. For example, if a voltage equivalent to high-frequency power is applied between the stage 100 and the spray head 400, an electric field generated by microwaves is formed in a direction perpendicular to the surface of the stage 100 and the surface of the substrate (on the side where the spray head 400 is disposed). For example, a magnet 520 is disposed in the upper part or on the side of the chamber 502. Figure 14 In this example, magnet 520 is disposed on the side of chamber 502. Magnet 520 can be a permanent magnet or an electromagnet with an electromagnetic coil. For example, magnet 520 forms a magnetic field component parallel to the stage 100 and the substrate surface. Through cooperation with the electric field generated by microwaves, electrons in the plasma resonate under the Lorentz force and are bound to the stage 100 and the substrate surface. As a result, a high-density plasma is generated on the substrate surface.

[0126] For example, if the stage 100 is equipped with a sheath heater, the heater power supply 530 for controlling the sheath heater is connected to the stage 100. Alternatively, a power supply 526 for an electrostatic chuck that fixes the substrate to the stage 100, a temperature controller 528 for controlling the temperature of the medium flowing inside the stage 100, and a rotation control device (not shown) for rotating the stage 100 can also be connected to the stage 100. For example, by using the temperature controller 528, a temperature-controlled medium can be allowed to flow into the space 160, thereby controlling the temperature of the stage 100.

[0127] The CVD apparatus 500 according to the fourth embodiment includes a stage 100 covered with a boehmite film and a spray head 400. The CVD apparatus 500 can uniformly heat the substrate, precisely control the heating temperature, and uniformly spray reaction gases into the chamber 502. As a result, various films can be uniformly formed on the substrate using the CVD apparatus 500. Furthermore, due to the excellent insulation properties of the stage 100 and the spray head 400, the voltage withstand capability of the CVD apparatus 500 is improved relative to the voltage applied to the stage 100, the spray head 400, and the substrate. In addition, because the CVD apparatus 500, including the stage 100 and the spray head 400 with excellent insulation and voltage withstand capability, has excellent long-term reliability, users can reduce the frequency of maintenance of the CVD apparatus 500.

[0128] As embodiments of the present invention, the components of the semiconductor manufacturing apparatus, the manufacturing method of the components of the semiconductor manufacturing apparatus, and the various components of the semiconductor manufacturing apparatus described above can be appropriately combined and implemented as long as they do not contradict each other. Furthermore, as embodiments of the present invention, the stage, the manufacturing method of the stage, and the various components of the semiconductor manufacturing apparatus described above can be appropriately replaced as long as they do not contradict each other. Additionally, solutions obtained by those skilled in the art based on the above embodiments by appropriately adding or deleting constituent elements or making design changes, as long as they possess the essence of the present invention, are also included within the scope of protection of the present invention.

[0129] Furthermore, any effects that differ from those resulting from the above-described embodiments, but are known from the description in this specification or that can be easily predicted by those skilled in the art, shall of course be understood as effects resulting from the present invention.

[0130] (Explanation of the labels in the attached diagram)

[0131] 100: Stage; 101: Corner; 101c-1: Corner; 101c-2: Corner; 101p: Corner; 103: Boundary region; 105: Boundary region; 105p: Crack; 110: Laminated substrate; 120: First substrate; 122: First surface; 124: Second surface; 126: Third surface; 140: Second substrate; 142: Fourth surface; 144: Joint surface; 146: Joint surface; 150: Insulating film; 150p: Anodized film; 160: Space; 160a: Space; 160e: Inlet / outlet hole; 160f: Groove; 160s: Groove; 162: Inner wall; 162d: Inner wall; 162e: Inner wall; 162l: Inner wall; 162r: Inner wall; 162u: Inner wall; 170: Opening; 172: Inner wall; 180: Through hole; 182: Inner wall; 200: Membrane processing device; 202: Chamber; 204: Exhaust device; 206: Inlet tube; 208: Valve; 210: Waveguide; 212: Microwave source; 214: Window; 216: Magnet; 218: Magnet; 220: Magnet; 224: Power supply; 226: Power supply; 228: Temperature controller; 230: Heater power supply; 300: Film forming device; 310: First chamber; 312: Cover; 314: Container; 316: Upper space; 318: Lower space; 320: Stage; 322: Heater; 324: Exhaust device; 326: Inlet tube; 328: Valve 340: Second chamber; 342: Cover; 344: Container; 346: Space; 350: Platform; 352: Exhaust device; 354: Pure water; 356: Water vapor; 360: Control circuit; 370: Area; 380: Area; 400: Spray head; 405: Laminated substrate; 405: Bonding substrate; 410: First substrate; 410: First substrate; 411: Inlet / outlet hole; 412: Inner wall; 412b: Through hole; 413: Space; 413a: Space; 413b: Space; 414: Inner wall; 414a: Inner wall; 414b: Inner wall; 415a: First surface; 415b: Second surface; 415c: Third surface; 415d: ​​Fourth surface; 420: Second Substrate; 421: Inlet / outlet hole; 421a: Through hole; 422: Inner wall; 422a: Inner wall; 422b: Inner wall; 423: Space; 424: Inner wall; 425a: First surface; 425b: Second surface; 425c: Third surface; 426: Inlet / outlet hole; 427: Inner wall; 430: Third substrate; 431: Inlet / outlet hole; 432: Inner wall; 435a: First surface; 435b: Second surface; 435c: Third surface; 435d: Fourth surface; 500: CVD device; 502: Chamber; 504: Exhaust device; 506: Inlet tube; 508: Valve; 520: Magnet; 524: High-frequency power supply; 526: Power supply; 528: Temperature controller; 530: Heater power supply.

Claims

1. A component of a semiconductor manufacturing apparatus, comprising: A substrate having a first surface and a second surface connected to the first surface; as well as A film containing aluminum hydroxide is continuously and directly disposed on the first surface and the second surface.

2. The component of the semiconductor manufacturing apparatus according to claim 1, wherein the substrate comprises aluminum.

3. The component of the semiconductor manufacturing apparatus according to claim 1, wherein, The substrate includes a space for the flow of the medium. The inner wall of the space is directly provided with the membrane containing aluminum hydroxide.

4. A component of the semiconductor manufacturing apparatus according to claim 1, wherein, The substrate includes a space capable of accommodating a heat source. The inner wall of the space is directly provided with the membrane containing aluminum hydroxide.

5. A component of the semiconductor manufacturing apparatus according to claim 1, wherein, The substrate also has a corner portion connected to the boundaries of the first surface and the second surface. The aluminum hydroxide-containing membrane is directly disposed at the corner.

6. A method for manufacturing a component of a semiconductor manufacturing apparatus, comprising: A substrate having a first surface and a second surface connected to the first surface is provided in a chamber capable of being heated and pressurized; Water or an aqueous solution is supplied to the chamber; Heating and pressurizing the chamber to generate water vapor within it; and A film containing aluminum hydroxide is continuously formed on the first surface and the second surface.

7. The method for manufacturing a component of the semiconductor manufacturing apparatus according to claim 6, wherein, The substrate includes aluminum.

8. The method for manufacturing a component of the semiconductor manufacturing apparatus according to claim 6, wherein, The substrate includes a space for the flow of the medium. The aluminum hydroxide-containing film is formed on the inner wall of the space.

9. The method for manufacturing a component of the semiconductor manufacturing apparatus according to claim 6, wherein, The substrate includes a space capable of accommodating a heat source. The aluminum hydroxide-containing film is formed on the inner wall of the space.

10. A method for manufacturing a component of a semiconductor manufacturing apparatus according to claim 6, wherein, The substrate also has a corner portion connected to the boundary of the first surface and the second surface. The aluminum hydroxide-containing membrane is directly disposed at the corner.

11. A method for manufacturing a component of a semiconductor manufacturing apparatus, comprising: A substrate having a first surface and a second surface connected to the first surface is provided in a chamber capable of being heated and pressurized; Water vapor is supplied to the chamber; The chamber is heated and pressurized; as well as A film containing aluminum hydroxide is continuously formed on the first surface and the second surface.

12. The method for manufacturing a component of the semiconductor manufacturing apparatus according to claim 11, wherein, The substrate includes aluminum.

13. The method for manufacturing a component of the semiconductor manufacturing apparatus according to claim 11, wherein, The substrate includes a space for the flow of the medium. The aluminum hydroxide-containing film is formed on the inner wall of the space.

14. The method for manufacturing a component of the semiconductor manufacturing apparatus according to claim 11, wherein, The substrate includes a space capable of accommodating a heat source. The aluminum hydroxide-containing film is formed on the inner wall of the space.

15. The method for manufacturing a component of the semiconductor manufacturing apparatus according to claim 11, wherein, The substrate also has a corner portion connected to the boundaries of the first surface and the second surface. The aluminum hydroxide-containing membrane is directly disposed at the corner.

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