Laminated film, semiconductor chip with adhesive layer, method for manufacturing laminated film, method for manufacturing semiconductor chip with adhesive layer, and method for manufacturing semiconductor device

Abstract

The laminated film (21) has a long strip of substrate film (22) and a label portion (23) disposed at a predetermined interval on one side of the substrate film (22). The label portion (23) has an adhesive layer (24) overlapping the substrate film (22) and a pressure-sensitive adhesive layer (25) overlapping the adhesive layer (24). A thinning portion (41) is provided on the surface (24a) opposite to the pressure-sensitive adhesive layer (25) in the adhesive layer (24) to reduce a portion of the volume of the adhesive layer (24).

Description

Technical Field

[0001] This invention relates to a laminated film, a semiconductor chip with an adhesive layer, a method for manufacturing the laminated film, a method for manufacturing the semiconductor chip with an adhesive layer, and a method for manufacturing a semiconductor device. Background Technology

[0002] In recent years, stacked MCPs (Multi-Chip Packages) that achieve high capacity by stacking multiple layers of semiconductor chips have become widespread. An example of a stacked MCP is a chip-embedded semiconductor package. The structure of a semiconductor package in which a semiconductor chip is embedded in an adhesive film is called FOD (Film Over Die). As an example of a semiconductor package employing FOD, there exists a structure in which a controller chip disposed on one side of a substrate is embedded between the substrate and a memory chip using an embedded portion of an adhesive film (for example, see Patent Document 1).

[0003] Previous technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2014-175459 Summary of the Invention

[0004] The technical problem to be solved by the invention In the manufacture of semiconductor packages with FOD (Front-of-Depth) structures, it is required that the semiconductor chip be adequately embedded in the embedded portion using an adhesive film (embedding performance). Regarding embedding performance, it is important to balance the suppression of leakage and voids. Leakage refers to the phenomenon of the embedded portion overflowing between the substrate and the memory chip, while voids refer to the phenomenon of gaps forming within the embedded portion between the substrate and the memory chip. Suppressing leakage and voids involves a trade-off due to factors such as the volume of the embedded portion; a technique that effectively suppresses both leakage and voids is desired.

[0005] The present invention was made to solve the above-mentioned problems, and its purpose is to provide a laminated film that can effectively suppress both bleed and void in the manufacture of semiconductor packages, a semiconductor chip with an adhesive layer, a method for manufacturing the laminated film, a method for manufacturing the semiconductor chip with an adhesive layer, and a method for manufacturing a semiconductor device.

[0006] means for solving technical problems The main points of this invention are as follows.

[0007] [1] A laminated film comprising: a strip of substrate film; and a label portion disposed at predetermined intervals on one side of the substrate film along the extension direction of the substrate film, the label portion having an adhesive layer overlapping the substrate film, a pressure-sensitive adhesive layer overlapping the adhesive layer, and a substrate layer overlapping the pressure-sensitive adhesive layer, wherein a thinning portion for reducing the volume of the adhesive layer is provided on the surface of the adhesive layer opposite to the pressure-sensitive adhesive layer.

[0008] In this laminated film, a thinning portion is provided on the surface of the adhesive layer opposite to the pressure-sensitive adhesive layer, thereby reducing the volume of the adhesive layer. By reducing a portion of the volume of the adhesive layer through the thinning portion, it is possible to effectively suppress both exudation and voids when the adhesive layer is used as an embedding part of the semiconductor chip in the manufacture of semiconductor packages.

[0009] [2] According to the laminated film described in [1], the thinning portion reduces the volume of the adhesive layer according to the volume of the semiconductor chip to which the adhesive layer is to be embedded. In this case, by means of the thinning portion, a portion of the volume of the adhesive layer is reduced precisely, thereby further achieving a good balance between suppressing exudation and suppressing voids.

[0010] [3] According to the laminated film described in [1], the thinning portion is formed by a recess extending in one direction along the in-plane direction of the opposing surface. With this structure, the reduction in volume of the adhesive layer based on the thinning portion can be easily controlled by designing the shape / size of the recess and the L / S ratio, etc. Furthermore, the thinning portion is also easily formed.

[0011] [4] According to the laminated film described in [1], the thinning portion is composed of recesses arranged in a grid pattern along the in-plane direction of the opposing surface. With this structure, the reduction in volume of the adhesive layer based on the thinning portion can be easily controlled by designing the shape / size of the recesses and the L / S ratio, etc. Furthermore, the thinning portion is also easily formed.

[0012] [5] According to the laminated film described in [1], the thinning portion is composed of recesses arranged in a checkerboard pattern along the in-plane direction of the opposing surface. With this structure, the amount of volume reduction of the adhesive layer based on the thinning portion can be easily controlled by designing the shape / size of the recesses, etc. Furthermore, the thinning portion is also easy to form.

[0013] [6] The laminated film according to any one of [1] to [5], wherein, in the label portion, the pressure-sensitive adhesive layer and the substrate layer have protruding portions extending outward beyond the edge of the adhesive layer, the protruding portions overlapping one side of the substrate film. With this configuration, the pressure-sensitive adhesive layer and the substrate layer can be easily attached to objects such as semiconductor wafers. Furthermore, since the adhesive layer is covered by the pressure-sensitive adhesive layer and the substrate layer, the thinned portion can be protected.

[0014] [7] A semiconductor chip with an adhesive layer, comprising: a semiconductor chip; and an adhesive layer disposed on one side of the semiconductor chip, wherein a thinning portion for reducing the volume of the adhesive layer is provided on the surface of the adhesive layer opposite to the semiconductor chip.

[0015] In this semiconductor chip with an adhesive layer, a thinning portion is provided on the surface of the adhesive layer opposite to the pressure-sensitive adhesive layer, thereby reducing the volume of the adhesive layer. By reducing the volume of the adhesive layer through the thinning portion, it is possible to effectively suppress both leakage and voids during the manufacturing of the semiconductor package.

[0016] [8] According to the semiconductor chip with adhesive layer described in [7], the thinning portion reduces the volume of the adhesive layer according to the volume of another semiconductor chip into which the adhesive layer is embedded. In this case, by means of the thinning portion, a portion of the volume of the adhesive layer is reduced precisely, thereby further achieving a good balance between suppressing exudation and suppressing voids.

[0017] [9] In the semiconductor chip with adhesive layer described in [7], the thinning portion is composed of a recess extending in one direction along the in-plane direction of the opposing surface. With this structure, the reduction in volume of the adhesive layer based on the thinning portion can be easily controlled by designing the shape / size and L / S ratio of the recess. Furthermore, the thinning portion is also easy to form.

[0018]

[10] According to the semiconductor chip with adhesive layer described in [7], the thinning portion is composed of recesses arranged in a grid pattern along the in-plane direction of the opposing surface. With this structure, the reduction in volume of the adhesive layer based on the thinning portion can be easily controlled by designing the shape / size and L / S ratio of the recesses. Furthermore, the thinning portion is also easy to form.

[0019]

[11] According to the semiconductor chip with adhesive layer described in [7], the thinning portion is composed of recesses arranged in a checkerboard pattern along the in-plane direction of the opposing surface. With this structure, the amount of volume reduction of the adhesive layer based on the thinning portion can be easily controlled by designing the shape / size of the recesses, etc. Furthermore, the thinning portion is also easy to form.

[0020]

[12] A method for manufacturing a laminated film includes: a preparation step of preparing a strip of substrate film overlapping an adhesive layer; a forming step of forming a thinning portion on one side of the adhesive layer to reduce the volume of the adhesive layer; and a lamination step of laminating the pressure-sensitive adhesive layer and the substrate layer onto the adhesive layer such that one side of the adhesive layer becomes the opposite side of the pressure-sensitive adhesive layer.

[0021] In this method of manufacturing the laminated film, the volume of the adhesive layer is reduced by providing a thinning portion on the surface opposite to the pressure-sensitive adhesive layer in the adhesive layer. By reducing a portion of the volume of the adhesive layer through the thinning portion, it is possible to effectively suppress both exudation and voids when the adhesive layer is used as an embedding part of the semiconductor chip in the manufacturing of semiconductor packages.

[0022]

[13] According to the method for manufacturing the laminated film described in

[12] , in the forming step, the volume of the adhesive layer is reduced according to the volume of the semiconductor chip to which the adhesive layer is to be embedded. In this case, by the thinning portion, a portion of the volume of the adhesive layer is reduced precisely, thereby further achieving a good balance between suppressing exudation and suppressing voids.

[0023]

[14] According to the method for manufacturing a laminated film as described in

[12] , in the forming step, the adhesive layer is heated and a bar coater is pressed against one side, thereby forming a recess extending in one direction along the in-plane direction of the side as the thinned portion. According to this method, the amount of volume reduction of the adhesive layer based on the thinned portion can be easily controlled. Furthermore, the thinned portion is also easily formed.

[0024]

[15] According to the method for manufacturing a laminated film as described in

[12] , in the forming step, the adhesive layer is partially cut by irradiating it with laser light, thereby forming a recess extending in one direction along the in-plane direction of one side as the thinned portion. According to this method, the amount of volume reduction of the adhesive layer based on the thinned portion can be easily controlled. Furthermore, the thinned portion is also easy to form.

[0025]

[16] The method for manufacturing a laminated film according to any one of

[12] to

[15] , wherein, in the lamination process, the pressure-sensitive adhesive layer and the substrate layer are pre-cut to form an extended portion that extends further outward than the edge of the adhesive layer, and the extended portion is overlapped on one side of the substrate film. According to this structure, in the manufactured laminated film, the pressure-sensitive adhesive layer and the substrate layer become easily adhered to objects such as semiconductor wafers. Furthermore, since the adhesive layer is covered by the pressure-sensitive adhesive layer and the substrate layer, the thinned portion can be protected.

[0026]

[17] A method for manufacturing a semiconductor chip with an adhesive layer includes: a preparation step of preparing a semiconductor chip with an adhesive layer, the semiconductor chip having a semiconductor chip and an adhesive layer disposed on one side of the semiconductor chip; and a forming step of forming a thinning portion in the adhesive layer on the opposite side of the semiconductor chip to reduce the volume of the adhesive layer.

[0027] In this method for manufacturing a semiconductor chip with an adhesive layer, the volume of the adhesive layer is reduced by providing a thinning portion on the surface of the adhesive layer opposite to the pressure-sensitive adhesive layer. By reducing a portion of the volume of the adhesive layer through the thinning portion, it is possible to effectively suppress both leakage and voids when the adhesive layer is used as an embedding portion of the semiconductor chip in the manufacturing of semiconductor packages.

[0028]

[18] In the method for manufacturing a semiconductor chip with an adhesive layer according to

[17] , in the forming process, the volume of the adhesive layer is reduced according to the volume of the semiconductor chip to which the adhesive layer is to be embedded. In this case, by the thinning portion, a portion of the volume of the adhesive layer is reduced precisely, thereby further achieving a good balance between suppressing exudation and suppressing voids.

[0029]

[19] According to the method for manufacturing a semiconductor chip with an adhesive layer as described in

[17] , in the forming process, the opposite surface is cut by irradiating with laser light, thereby forming a recess extending in one direction along the in-plane direction of the opposite surface as the thinned portion. According to this method, the amount of volume reduction of the adhesive layer based on the thinned portion can be easily controlled. Furthermore, the thinned portion is also easy to form.

[0030]

[20] A method for manufacturing a semiconductor device, wherein a semiconductor chip with an adhesive layer as described in any one of [7] to

[11] and a substrate on which the semiconductor chip is mounted are prepared, and the semiconductor chip with the adhesive layer is thermally pressed onto the substrate with the adhesive layer facing the substrate, and an embedded portion is formed between the semiconductor chip and the substrate.

[0031] In this semiconductor device manufacturing method, the volume of the adhesive layer is reduced by using the aforementioned semiconductor chip with an adhesive layer. By reducing the volume of the adhesive layer through the thinning process, when the adhesive layer is used as an embedding part of the semiconductor chip in the manufacturing of the semiconductor package, it is possible to effectively achieve both suppression of leakage and suppression of voids.

[0032] Invention Effects According to the present invention, it is possible to effectively suppress both exudation and cavitation. Attached Figure Description

[0033] Figure 1 This is a schematic cross-sectional view showing an example of a semiconductor package.

[0034] Figure 2 This is a schematic top view showing an example of a laminated film.

[0035] Figure 3 yes Figure 2 A sectional view taken along line III-III.

[0036] Figure 4 (a) is a schematic cross-sectional view showing the bonding process. Figure 4 (b) is a schematic cross-sectional view showing the cutting process. Figure 4 (c) is a schematic cross-sectional view representing the irradiation process.

[0037] Figure 5 (a) is a schematic cross-sectional view representing the picking process. Figure 5 (b) is a schematic cross-sectional view showing the chip mounting process.

[0038] Figure 6 (a) is a schematic cross-sectional view showing the seepage. Figure 6 (b) is a schematic cross-sectional view showing the cavity.

[0039] Figure 7 This is a schematic top view showing the main part of a laminated film with a thinned section.

[0040] Figure 8 (a) and Figure 8 (b) is a schematic cross-sectional view showing the recess that constitutes the thinning section.

[0041] Figure 9 (a) indicates that it is used to form Figure 8 A schematic diagram of an example of a wireless rod with a recess shown in (a). Figure 9 (b) is a schematic diagram showing the parameters of its groove section.

[0042] Figure 10 (a) indicates that it is used to form Figure 8 (b) is a schematic diagram of an example of a wire rod with a concave portion. Figure 10 (b) is a schematic diagram showing the parameters of its conductor.

[0043] Figure 11 It is a schematic cross-sectional view showing the formation state of the concave part.

[0044] Figure 12 This is a flowchart illustrating an example of a method for manufacturing a laminated film with a thinned portion.

[0045] Figure 13 (a) is a schematic cross-sectional view of a semiconductor chip having an adhesive layer with a recess as an example of a thinned portion. Figure 13 (b) is a schematic cross-sectional view showing the formation state of the recess.

[0046] Figure 14 This is a flowchart illustrating an example of a method for manufacturing a semiconductor chip with an adhesive layer and a thinned portion.

[0047] Figure 15 (a) and Figure 15 (b) is a schematic top view showing a modified example of the thinned section.

[0048] Figure 16 (a) and Figure 16 (b) is a schematic top view showing another variation of the thinned section. Detailed Implementation

[0049] Hereinafter, with reference to the accompanying drawings, preferred embodiments of the laminated film, the semiconductor chip with adhesive layer, the method for manufacturing the laminated film, the method for manufacturing the semiconductor chip with adhesive layer, and the method for manufacturing the semiconductor device according to one aspect of the present invention will be described in detail.

[0050] In the following description, unless otherwise expressly stated, the constituent elements (including steps, etc.) are not essential. The sizes of the constituent elements in the figures are conceptual sizes, and the relative sizes between the constituent elements are not limited to what is shown in the figures. The numerical values ​​and ranges illustrated are not intended to limit the invention.

[0051] In the following description, the numerical range represented by "~" indicates the range encompassed by the values ​​recorded before and after "~" as the minimum and maximum values, respectively. Furthermore, within a range of numerical values ​​recorded in stages, the upper or lower limit value recorded in one range can be replaced by the upper or lower limit value of other ranges of numerical values ​​recorded in stages. The upper or lower limit value of the numerical range can be replaced by the values ​​shown in the embodiments.

[0052] Figure 1 This is a schematic cross-sectional view illustrating an example of a semiconductor package. Here, NAND flash memory and other semiconductor devices are illustrated as example of semiconductor package (semiconductor device) 1. Figure 1 As shown, the semiconductor package 1 is configured to include a substrate 2, a first semiconductor chip (semiconductor chip) 3, a second semiconductor chip (semiconductor chip) 4, an embedded portion 5, and a sealing portion 6. The substrate 2 is, for example, an organic substrate. It can also be a metal substrate such as a lead frame. Prescribed circuit patterns 7 and 8 are formed on one side of the substrate 2.

[0053] The first semiconductor chip 3 is, for example, a controller chip. The first semiconductor chip 3 is electrically connected to the circuit pattern 7 via an adhesive layer 9. The first semiconductor chip 3 is electrically connected to the circuit pattern 8 via a first conductive wire 10. The second semiconductor chip 4 is, for example, a memory chip. The second semiconductor chip 4 is disposed on one side of the substrate 2 at a certain distance from the first semiconductor chip 3. The second semiconductor chip 4 is electrically connected to the circuit pattern 8 via a second conductive wire 11.

[0054] An embedded portion 5, formed by an adhesive layer 24 of a laminated film 21 (described later), is provided between the second semiconductor chip 4 and the substrate 2. The first semiconductor chip 3, the circuit pattern 7, and the first conductive line 10 are embedded between the second semiconductor chip 4 and the substrate 2 through the embedded portion 5. The first semiconductor chip 3, the second semiconductor chip 4, the first conductive line 10, and the second conductive line 11 are sealed on one side of the substrate 2 by a sealing portion 6, which is located further outward than the embedded portion 5.

[0055] Figure 2 This is a schematic top view illustrating an example of a laminated film. Furthermore, Figure 3 yes Figure 2 A sectional view taken along line III-III. Figure 2 and Figure 3 The laminated film 21 shown is a strip of film used in the manufacturing process of the semiconductor package 1 described above for fixing the semiconductor wafer in the dicing process and forming the embedded portion 5 in the chip mounting process. The laminated film 21 is usually stored in a rolled state and is pulled out from the roll according to the required amount when used.

[0056] like Figure 2 and Figure 3 As shown, the laminated film 21 has a long strip of substrate film 22 and a label portion 23, which is disposed on one side of the substrate film 22 at predetermined intervals along the extending direction of the substrate film 22. The label portion 23 is composed of an adhesive layer 24 overlapping the substrate film 22, a pressure-sensitive adhesive layer 25 overlapping the adhesive layer 24, and a substrate layer 27 overlapping the pressure-sensitive adhesive layer 25. When viewed from above, the label portion 23 is, for example, circular in shape.

[0057] The substrate film 22 is, for example, a resin film. Examples of resin materials constituting the substrate film 22 include polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimide. The thickness of the substrate film 22 can be, for example, 60–200 μm or 70–170 μm. A release treatment based on silicone or the like can also be performed on the surface of the substrate film 22.

[0058] The adhesive layer 24 is, for example, a film-like portion called a chip mounting film. Examples of materials constituting the adhesive layer 24 include, for example, thermosetting resins with electrical insulating properties. Examples of thermosetting resins include, for example, epoxy resins, bismaleimide resins, triazine resins, polyimide resins, polyamide resins, cyanoacrylate resins, phenolic resins, unsaturated polyester resins, melamine resins, urea-formaldehyde resins, polyurethane resins, polyisocyanate resins, furan resins, resorcinol resins, xylene resins, benzoguanamine resins, diallyl phthalate resins, silicone resins, polyvinyl butyral resins, siloxane-modified epoxy resins, siloxane-modified polyamide-imide resins, and acrylate resins. These can be used alone or as a mixture of two or more. The adhesive layer 24 may contain acrylate rubber.

[0059] The pressure-sensitive adhesive layer 25 and the substrate layer 27 are, for example, film-like portions referred to as cut strips. The pressure-sensitive adhesive layer 25 can be either a single layer or multiple layers. The pressure-sensitive adhesive layer 25 preferably has pressure-sensitive adhesive force at room temperature and the required adhesion force to the adhered object. The pressure-sensitive adhesive layer 25 preferably has the property of curing (decreasing pressure-sensitive adhesive force) by high-energy rays such as radiation or heat. More preferably, the pressure-sensitive adhesive layer 25 can be easily peeled off from the substrate film 22 and the adhesive layer 24 even without the application of high-energy rays such as radiation or heat. The pressure-sensitive adhesive layer 25 can be a pressure-sensitive adhesive layer. The pressure-sensitive adhesive layer 25 can be formed, for example, using acrylic resins, various synthetic rubbers, natural rubbers, polyimide resins. The substrate layer 27 is formed, for example, from resins such as polyolefins, polypropylene, and ionomers. The thickness of the pressure-sensitive adhesive layer 25, including the substrate layer 27, can be, for example, 10 μm to 200 μm or 20 μm to 150 μm.

[0060] In this embodiment, such as Figure 2 and Figure 3 As shown, in the label portion 23, the pressure-sensitive adhesive layer 25 and the substrate layer 27 have annular protrusions P that extend outward beyond the edge of the adhesive layer 24. The protrusions P overlap one side of the substrate film 22. Thus, the adhesive layer 24 on one side of the substrate film 22 is covered by the pressure-sensitive adhesive layers 25 and 27.

[0061] In this embodiment, a protective portion 26 is provided to surround the label portion 23. The protective portion 26 protects the label portion 23 from pressure when the laminated film 21 is wound into a roll. The protective portion 26 is symmetrically arranged at two edges in the width direction of one side of the substrate film 22 and extends along the extension direction of the substrate film 22. In this embodiment, the protective portion 26 is composed of a pressure-sensitive adhesive layer 25 and a substrate layer 27. The label portion 23 and the protective portion 26 are formed by laminating the pressure-sensitive adhesive layer 25 and the substrate layer 27 in such a way as to cover one side of the substrate film 22 with an adhesive layer 24, pre-cutting the pressure-sensitive adhesive layer 25 and the substrate layer 27 in a predetermined pattern, and peeling off the unwanted portions from one side of the substrate film 22.

[0062] Next, the manufacturing method of the semiconductor package 1 formed using the above-described laminated film 21 will be described.

[0063] The manufacturing method of the semiconductor package 1 in this embodiment includes a bonding process, a dicing process, an irradiation process, a pick-up process, and a chip mounting process. The bonding process is the process of bonding the pressure-sensitive adhesive layer 25 and the substrate layer 27 together with the adhesive layer 24 onto the semiconductor wafer W. In the bonding process, as... Figure 4 As shown in (a), after the label portion 23 is attached to one side of the semiconductor wafer W with the adhesive layer 24 facing the semiconductor wafer W side, the substrate film 22 is peeled off from the label portion 23. In the attachment process, the peripheral portion of the pressure-sensitive adhesive layer 25 is fixed to a ring frame (not shown), and the semiconductor wafer W is supported inside the ring frame.

[0064] The dicing process involves cutting the semiconductor wafer W to form a semiconductor chip 31 with an adhesive layer. In the dicing process, a cutting mechanism such as a blade or a laser is used. Figure 4 As shown in (b), the semiconductor wafer W and the adhesive layer 24 are cut together in a predetermined pattern (e.g., a grid pattern). As a result, a plurality of semiconductor chips 31 with adhesive layers are formed on the pressure-sensitive adhesive layer 25. The chip portion 32 of the semiconductor chip 31 with adhesive layers becomes the aforementioned second semiconductor chip 4 in the manufactured semiconductor package 1. When cutting the semiconductor wafer W and the adhesive layer 24, the cutting line is provided to the pressure-sensitive adhesive layer 25, thereby enabling more reliable separation of adjacent semiconductor chips 31 with adhesive layers from each other.

[0065] The irradiation process involves irradiating the pressure-sensitive adhesive layer 25 with light to cure it. During the irradiation process, such as... Figure 4As shown in (c), the pressure-sensitive adhesive layer 25 is irradiated with ultraviolet light V to reduce the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer 25. The pick-up process is a process of picking up the semiconductor chip 31 with the adhesive layer from the pressure-sensitive adhesive layer 25. In the pick-up process, as... Figure 5 As shown in (a), a pick-up mechanism such as a chuck C is used to pick up the semiconductor chip 31 with the adhesive layer from the pressure-sensitive adhesive layer 25 where the adhesive force has decreased. Alternatively, in the manufacturing method of the semiconductor package 1, the semiconductor chip 31 with the adhesive layer can be prepared in advance for subsequent processes.

[0066] The chip mounting process involves placing a semiconductor chip 31 with an adhesive layer onto the substrate 2. Figure 5 In example (b), the first semiconductor chip 3 is electrically connected to the circuit pattern 7 of the substrate 2 via an adhesive layer 9, and the first semiconductor chip 3 is electrically connected to the circuit pattern 8 via a first wire 10. In this state, the semiconductor chip 31 with the adhesive layer is thermo-pressed with the adhesive layer 24 facing the substrate 2. As a result, an embedded portion 5 is formed between the second semiconductor chip 4 and the substrate 2, in which the first semiconductor chip 3, the circuit pattern 7, and the first wire 10 are respectively embedded.

[0067] If the heating temperature during hot pressing is increased, the adhesive layer 24 softens and tends to further improve embeddability. The hot pressing time can be, for example, 0.5 seconds to 20 seconds, or 1 second to 5 seconds. The pressure during hot pressing can be 0.01 MPa to 5 MPa, or 0.02 MPa to 2 MPa.

[0068] After pressing, the structure containing the adhesive layer 24 can be further heated to cure the adhesive layer 24. In this case, the temperature can be appropriately set based on the curing temperature of the adhesive layer 24. The temperature can be varied in stages. The heating temperature can be 40℃~300℃, or 60℃~200℃. The heating time can be 30 minutes~300 minutes.

[0069] Subsequently, the second semiconductor chip 4 is electrically connected to the circuit pattern 8 via the second wire 11, and the first semiconductor chip 3, the second semiconductor chip 4, the first wire 10, and the second wire 11 are sealed by the sealing part 6, thereby obtaining... Figure 1 The semiconductor package 1 shown. The sealing portion 6 can be formed, for example, by injection molding using a mold. After the sealing portion 6 is formed, it can be further heated to cure it. In this case, the heating temperature can be 165°C to 185°C. The heating time can be 0.5 hours to 8 hours.

[0070] In the manufacturing of the semiconductor package 1 as described above, it is required that the first semiconductor chip 3 be sufficiently embedded (embedding quality) using the embedding portion 5 of the adhesive layer 24. Regarding embedding quality, it is important to both suppress exudation and suppress voids. For example, as Figure 6 As shown in (a), leakage refers to the phenomenon where the embedded portion 5 overflows from between the substrate 2 and the second semiconductor chip 4. If leakage occurs, the following problems may arise: interference with other components on the substrate 2 or reduced workability when connecting wires (e.g., the second wire 11).

[0071] And, for example, such as Figure 6 As shown in (b), a void refers to, for example, the phenomenon of a gap G being generated in the embedded portion 5 between the substrate 2 and the second semiconductor chip 4. If a void is generated, it may cause a decrease in reliability due to poor embedding of the first semiconductor chip 3. In addition, it is also possible to consider the phenomenon that the embedded portion 5 and the second semiconductor chip 4 bulge together (arching) depending on the volume of the void G.

[0072] There is a trade-off between suppressing exudation and suppressing voids due to factors such as the volume of the embedded part 5. For example, if the volume of the embedded part 5 is too large, it is easy for the embedded part 5 to overflow between the substrate 2 and the second semiconductor chip 4; if the volume of the embedded part 5 is insufficient, voids G are easily generated in the embedded part 5 between the substrate 2 and the second semiconductor chip 4.

[0073] For this type of problem, in the laminated film 21, such as Figure 7 As shown, a thinning portion 41 is provided on the opposing surface 24a of the pressure-sensitive adhesive layer 25 in the adhesive layer 24. This thinning portion 41 reduces the volume of the adhesive layer 24 according to the volume of the semiconductor chip (here, the first semiconductor chip 3) to which the adhesive layer 24 is embedded. The opposing surface 24a of the adhesive layer 24 is the opposite surface 24b (see reference) of the semiconductor chip 31 with an adhesive layer manufactured in the above-described semiconductor package 1 manufacturing process, facing the side opposite to the side attached to the semiconductor wafer W. Figure 16 (a) etc. Furthermore, this opposing surface 24a becomes the surface that presses against the substrate 2 and the first semiconductor chip 3 on the substrate when the semiconductor chip 31 with the adhesive layer is thermally bonded to the substrate 2 (see reference). Figure 5 (b)

[0074] In this embodiment, the thinned portion 41 is formed by a recess 42 extending in one direction along the in-plane direction of the opposing surface 24a. Figure 7In the example, a plurality of recesses 42 are arranged along the width direction of the substrate film 22 in the in-plane direction of the opposing surface 24a. The recesses 42 are formed in a straight line continuously arranged in the direction of extension of the substrate film 22. In each of the semiconductor chip 31 with an adhesive layer fabricated using the laminated film 21, the sum of the thinning amount (volume reduction) of the adhesive layer 24 based on each recess 42 can be the same as or less than the volume of the first semiconductor chip 3 to which the adhesive layer 24 is embedded. In the semiconductor chip 31 with an adhesive layer fabricated using the laminated film 21, when the volume of the first semiconductor chip 3 to which the adhesive layer 24 is embedded is set to 100%, the sum of the thinning amount (volume reduction) of the adhesive layer 24 based on each recess 42 can also be 1% to 100%.

[0075] The line-to-space (L / S) ratio of the recess 42 can be set, for example, according to the planar shape of the first semiconductor chip 3 embedded in the embedded portion 5. For example, when the semiconductor chip 31 with an adhesive layer is thermo-pressed onto the substrate 2, the L / S ratio of the recess 42 is set such that one or more recesses 42 overlap on the first semiconductor chip 3. As an example, when the planar dimensions of the first semiconductor chip 3 are 5mm × 10mm, the L / S ratio of the recess 42 can be 2500μm / 5μm to 5μm / 2500μm. The depth of the recess 42 is designed, for example, based on the volume of the first semiconductor chip 3 and the L / S ratio of the recess 42. The depth of the recess 42 can be, for example, 5μm to 1200μm.

[0076] The recess 42 can be constructed in various ways. Figure 8 In example (a), the cross-sectional shape of the recess 42A is wavy or arc-shaped. Figure 8 In example (b), the cross-sectional shape of the recess 42B is rectangular. For example... Figure 8 The recess 42A shown in (a) with a wavy or arc-shaped cross-section can be formed, for example, by a bar coater 43. As the bar coater 43, for example, a... Figure 9 The wireless rod 44 shown in (a) is a component with a groove 44a formed on the circumferential surface of a stainless steel shaft.

[0077] When forming a recess 42A using a wireless rod 44, the adhesive layer 24 is heated at a specified temperature, and the groove portion 44a on the peripheral surface of the wireless rod 44 is pressed against one side of the adhesive layer 24 (the side that becomes the opposing surface 24a), and the wireless rod 44 is moved in a straight line along the in-plane direction of one side of the adhesive layer 24. As a result, a recess 42A with a wavy or arc-shaped cross-sectional shape corresponding to the shape of the groove portion 44a is formed on one side of the adhesive layer 24. This is achieved by adjusting the spacing P, depth H, and pocket area A between the groove portions 44a of the wireless rod 44 (see reference). Figure 9 (b) etc., can form a recess 42A with a desired shape and L / S on the opposing surface 24a of the adhesive layer 24.

[0078] Furthermore, as a bar coater 43, it is also possible to use, for example, a type of... Figure 10 (a) shows the wire rod 45. The wire rod 45 is a component in which the wire 45a is wound around the circumference of a stainless steel shaft. When forming the recess 42A using the wire rod 45, similarly to the case of using the wire rod 44, the adhesive layer 24 is heated at a specified temperature, the wire 45a on the circumference of the wire rod 45 is pressed against one side of the adhesive layer 24 (the side that becomes the opposing surface 24a), and the wire rod 45 is moved in a straight line along the in-plane direction of one side of the adhesive layer 24. As a result, a recess 42A with a wavy or arc-shaped cross-sectional shape corresponding to the shape of the wire 45a is formed on one side of the adhesive layer 24. By adjusting the diameter D of the wire 45a of the wire rod 45 and the pocket area A between the wires 45a (refer to...), the recess 42A is formed on one side of the adhesive layer 24. Figure 10 (b) etc., can form a recess 42A with a desired shape and L / S on the opposing surface 24a of the adhesive layer 24.

[0079] like Figure 8 As shown in (b), the recess 42B has a rectangular cross-sectional shape, for example, Figure 11 As shown, the adhesive layer 24 can be partially cut by irradiation with laser light L. For example, a green laser or a CO2 laser can be used as the laser light L for processing the recess 42B. The green laser is a laser that uses a nonlinear optical crystal to set the fundamental wavelength of a YAG laser or semiconductor laser (1064 nm) to the second harmonic of a wavelength of 532 nm. The CO2 laser is a laser in the infrared band around 10 μm, amplified by using CO2 as a medium.

[0080] By moving the laser beam L in a straight line along the in-plane direction of one side of the adhesive layer 24, a portion of the adhesive layer 24 is cut, thereby forming a recess 42B with a rectangular cross-sectional shape on one side of the adhesive layer 24. By adjusting the irradiation conditions of the laser beam L, a recess 42B with a desired cross-sectional shape and L / S can be formed on one side of the adhesive layer 24. The cross-sectional shape of the recess 42B is not limited to a rectangle; various shapes such as triangular, semi-circular, U-shaped, and stepped shapes can be used. For example, when using a femtosecond green laser to process the recess 42B, the output can be set to 0.1W to 0.3W, the scanning speed to 500mm / second, and the repetition frequency to 100kHz.

[0081] Next, the manufacturing method of the above-mentioned laminated film 21 will be described.

[0082] Figure 12 This is a flowchart illustrating an example of a method for manufacturing a laminated film having a thinning portion 41. For example... Figure 15 As shown, the manufacturing method of the laminated film 21 includes a preparation step (step S01), a forming step (step S02), and a lamination step (step S03). These steps are performed, for example, in a roll-to-roll manner.

[0083] Preparation step S01 is a process of preparing a strip of substrate film 22 with adhesive layers 24 overlapping. In preparation step S01, a raw sheet of the strip of substrate film 22 with adhesive layers 24 disposed on one side is fed out from a feed roller. Forming step S02 is a process of forming a thinning portion 41 on one side of the adhesive layer 24, the thinning portion 41 reducing the volume of the adhesive layer 24 according to the volume of the semiconductor chip (first semiconductor chip 3) to which the adhesive layer 24 is embedded. In forming step S02, a raw sheet of the strip of adhesive layer 24 is fed out from a feed roller. Then, one side of the adhesive layer 24 is processed to form the thinning portion 41 on that side.

[0084] When forming the recess 42 using a bar coater 43, the adhesive layer 24 is heated and the bar coater 43 is pressed against one side of the adhesive layer 24, thereby forming a recess 42 extending in one direction along the in-plane direction of one side of the adhesive layer 24 (see reference). Figure 9 (a) and Figure 10 (a)). In the case of partial cutting of the adhesive layer 24, the laser beam L is moved in a straight line along the in-plane direction of one side of the adhesive layer 24, thereby cutting a portion of the adhesive layer 24 to form a recess 42 extending along the in-plane direction of one side of the adhesive layer 24 (see reference). Figure 11 ).

[0085] The lamination process S03 is a process in which a pressure-sensitive adhesive layer 25 and a substrate layer 27 are laminated on the adhesive layer 24 such that one side of the adhesive layer 24 is the opposite side 24a of the pressure-sensitive adhesive layer 25. Here, a film with the pressure-sensitive adhesive layer 25 laminated on the substrate layer 27 is prepared, and the pressure-sensitive adhesive layer 25 and the substrate layer 27 are laminated on one side of the substrate film 22 such that the pressure-sensitive adhesive layer 25 and the adhesive layer 24 are opposite each other. After lamination, the pressure-sensitive adhesive layer 25 and the substrate layer 27 are pre-cut into circles. As a result, a label portion 23 is formed on one side of the substrate film 22, thereby obtaining... Figure 2 and Figure 3 The laminated film 21 is shown. During the pre-cutting of the pressure-sensitive adhesive layer 25 and the substrate layer 27, an extended portion P is formed that extends further outward than the edge of the adhesive layer 24, and the extended portion P is overlapped on one side of the substrate film 22. As a result, the adhesive layer 24 on one side of the substrate film 22 is covered by the pressure-sensitive adhesive layer 25 and the substrate layer 27.

[0086] As explained above, in the laminated film 21, a thinning portion 41 is provided on the surface 24a opposite to the pressure-sensitive adhesive layer 25 in the adhesive layer 24. The volume of the adhesive layer 24 is reduced according to the volume of the semiconductor chip (first semiconductor chip 3) to which the adhesive layer 24 is embedded. By using the thinning portion 41, a portion of the volume of the adhesive layer 24 is reduced precisely, thereby effectively achieving both suppression of exudation and suppression of voids when the adhesive layer 24 is used as the embedding portion 5 of the first semiconductor chip 3 in the manufacture of the semiconductor package 1.

[0087] In this embodiment, the thinning portion 41 is composed of a recess 42 extending in one direction along the in-plane direction of the opposing surface 24a. With this structure, the amount of volume reduction of the adhesive layer 24 based on the thinning portion 41 can be easily controlled by designing the shape / size and L / S ratio of the recess 42. Furthermore, the thinning portion 41 is also easy to form.

[0088] Furthermore, in this embodiment, in the label portion 23, the pressure-sensitive adhesive layer 25 and the substrate layer 27 have protruding portions P that extend further outward than the edge of the adhesive layer 24, and the protruding portions P overlap one side of the substrate film 22. With this configuration, the pressure-sensitive adhesive layer 25 and the substrate layer 27 can be easily attached to objects such as semiconductor wafers W. Moreover, since the adhesive layer 24 is covered by the pressure-sensitive adhesive layer 25 and the substrate layer 27, the thinned portion 41 can be protected.

[0089] In the above embodiment, a thinning portion 41 is formed on the opposing surface 24a of the adhesive layer 24 of the laminated film 21, but as Figure 13 As shown in (a), a thinning portion 41 can also be formed on the adhesive layer 24 of the semiconductor chip 31 with an adhesive layer. Figure 13In the semiconductor chip 31 with adhesive layer (a), a thinning portion 41 is provided on the opposite side 24b of the adhesive layer 24, which is opposite to the chip portion (semiconductor chip) 32.

[0090] exist Figure 13 In example (a), the thinning portion 41 is formed by a recess 52 extending in one direction along the in-plane direction of the opposite surface 24b of the adhesive layer 24. For example, as Figure 13 As shown in (b), the recess 52 can be formed by partially cutting the adhesive layer 24 by irradiation with laser light L. In this case, for example, while holding the semiconductor chip 31 with the adhesive layer on the chip portion 32 side using chuck C, the laser light L is moved linearly in the in-plane direction along the opposite surface 24b of the adhesive layer 24. As a result, a portion of the adhesive layer 24 is cut, and the recess 52 is formed on the opposite surface 24b of the adhesive layer 24.

[0091] Figure 14 This is a flowchart illustrating an example of a method for manufacturing a semiconductor chip with an adhesive layer having a thinned portion 41. For example... Figure 14 As shown, the manufacturing method of the semiconductor chip 31 with adhesive layer is configured to include a preparation step (step S11) and a forming step (step S12).

[0092] Preparation step S11 is a step of preparing a semiconductor chip 31 with an adhesive layer. The semiconductor chip 31 with an adhesive layer includes a chip portion (semiconductor chip) 32 and an adhesive layer 24 disposed on one side of the chip portion 32. In preparation step S11, for example, the attachment step, dicing step, irradiation step and pick-up step in the semiconductor package manufacturing method described above are performed respectively, forming a state in which the chip portion 32 side of the semiconductor chip 31 with the adhesive layer is held by a chuck C.

[0093] Forming step S12 is a process of forming a thinning portion 41 on the opposite surface 24b of the adhesive layer 24, opposite to the chip portion 32. This thinning portion 41 reduces the volume of the adhesive layer 24 according to the volume of the semiconductor chip (first semiconductor chip 3) to which the adhesive layer 24 is to be embedded. In forming step S12, a laser beam L is moved linearly along the in-plane direction of the opposite surface 24b of the adhesive layer 24, thereby cutting a portion of the adhesive layer 24 to form a recess 52 extending along the in-plane direction of the opposite surface 24b of the adhesive layer 24 (see reference). Figure 13 (b)

[0094] In this semiconductor chip 31 with an adhesive layer, a thinning portion 41 is also provided on the surface 24a opposite to the pressure-sensitive adhesive layer 25 in the adhesive layer 24. The volume of the adhesive layer 24 is reduced according to the volume of the semiconductor chip (first semiconductor chip 3) to which the adhesive layer 24 is embedded. By using the thinning portion 41, a portion of the volume of the adhesive layer 24 can be reduced precisely, thereby achieving a good balance between suppressing exudation and suppressing voids in the manufacturing of the semiconductor package 1.

[0095] In this embodiment, the thinning portion 41 is composed of a recess 52 extending in one direction along the in-plane direction of the opposite surface 24b. With this structure, the amount of volume reduction of the adhesive layer 24 based on the thinning portion 41 can be easily controlled by designing the shape / size and L / S ratio of the recess 52. Furthermore, the thinning portion 41 is also easy to form.

[0096] The present invention is not limited to the above embodiments. For example, in the above embodiments, a straight thinning portion 41 is formed in the in-plane direction of the opposing surface 24a in the laminated film 21 in the direction along the extension direction of the substrate film 22. However, the extension direction of the thinning portion 41 is not limited to this. It can be along a direction oblique to the extension direction of the substrate film 22 or along a direction orthogonal to the extension direction of the substrate film 22.

[0097] Furthermore, in the above embodiment, a continuous, linear thinning portion 41 is illustrated, but the shape of the thinning portion 41 is not limited to this. For example, such as Figure 15 As shown in (a), the thinned portion 41 can be composed of dotted or dashed recesses 62A, such as... Figure 15 As shown in (b), it can also be formed by a wavy recess 62B. Furthermore, as... Figure 16 As shown in (a), the thinning portion 41 can be composed of recesses 62C arranged in a grid pattern along the in-plane direction of the opposing surface 24a, such as... Figure 16 As shown in (b), it can also be composed of recesses 62D arranged in a checkerboard pattern along the in-plane direction of the opposing surface 24a. In the checkerboard pattern, when viewed from above, the rectangular recesses 62D are arranged in an alternating grid pattern.

[0098] In these structures, the amount of volume reduction of the adhesive layer 24 by the thinning portion 41 can be easily controlled by the design of the shape / size of the recess and L / S ratio. Furthermore, the thinning portion 41 is easy to form. When multiple thinning portions 41 are formed, the width, cross-sectional shape, and spacing of the recesses constituting the thinning portion 41 can be different from each other.

[0099] Explanation of reference numerals in the attached figures 1-Semiconductor package (semiconductor device), 2-Substrate, 3-First semiconductor chip (semiconductor chip), 4-Second semiconductor chip (semiconductor chip), 5-Embedded portion, 21-Layered film, 22-Substrate film, 23-Label portion, 24-Adhesive layer, 24a-Opposing surface, 24b-Opposite surface, 25-Pressure-sensitive adhesive layer, 27-Substrate layer, 31-Semiconductor chip with adhesive layer, 32-Chip portion (semiconductor chip), 41-Thinning portion, 42 (42A, 42B, 62A~62D)-Recessed portion, 43-Bar coating machine, 52-Recessed portion, L-Laser light, P-Extended portion.

Claims

1. A laminated membrane comprising: Long strip substrate film; and The label portion is disposed on one side of the substrate film at predetermined intervals along the extending direction of the substrate film. The label portion has an adhesive layer overlapping the substrate film, a pressure-sensitive adhesive layer overlapping the adhesive layer, and a substrate layer overlapping the pressure-sensitive adhesive layer. A thinning portion is provided on the surface of the adhesive layer opposite to the pressure-sensitive adhesive layer to reduce the volume of the adhesive layer.

2. The laminated film according to claim 1, wherein, The thinning section reduces the volume of the adhesive layer according to the volume of the semiconductor chip to which the adhesive layer is embedded.

3. The laminated film according to claim 1, wherein, The thinning portion is composed of a recess extending in one direction along the in-plane direction of the opposing surface.

4. The laminated film according to claim 1, wherein, The thinning portion is composed of recesses arranged in a grid pattern along the in-plane direction of the opposing surface.

5. The laminated film according to claim 1, wherein, The thinning portion is composed of recesses arranged in a checkerboard pattern along the in-plane direction of the opposing surface.

6. The laminated film according to any one of claims 1 to 5, wherein, In the label portion, the pressure-sensitive adhesive layer and the substrate layer have protruding portions that extend further outward than the edge of the adhesive layer. The protruding portion overlaps one side of the substrate film.

7. A semiconductor chip with an adhesive layer, comprising: Semiconductor chips; and An adhesive layer is disposed on one side of the semiconductor chip. A thinning portion is provided on the adhesive layer opposite to the semiconductor chip to reduce the volume of the adhesive layer.

8. The semiconductor chip with an adhesive layer according to claim 7, wherein, The thinning section reduces the volume of the adhesive layer according to the volume of another semiconductor chip that is the object to which the adhesive layer is embedded.

9. The semiconductor chip with an adhesive layer according to claim 7, wherein, The thinning portion is composed of a recess extending in one direction along the in-plane direction of the opposing surface.

10. The semiconductor chip with an adhesive layer according to claim 7, wherein, The thinning portion is composed of recesses arranged in a grid pattern along the in-plane direction of the opposing surface.

11. The semiconductor chip with an adhesive layer according to claim 7, wherein, The thinning portion is composed of recesses arranged in a checkerboard pattern along the in-plane direction of the opposing surface.

12. A method for manufacturing a laminated film, comprising: Preparation process: Prepare a long strip of substrate film to overlap with the adhesive layer; In the forming process, a thinning portion is formed on one side of the adhesive layer to reduce the volume of the adhesive layer; and In the lamination process, the pressure-sensitive adhesive layer and the substrate layer are laminated onto the adhesive layer with one side of the adhesive layer serving as the opposite side of the pressure-sensitive adhesive layer.

13. The method for manufacturing a laminated film according to claim 12, wherein, In the forming process, the volume of the adhesive layer is reduced according to the volume of the semiconductor chip to which the adhesive layer will be embedded.

14. The method for manufacturing a laminated film according to claim 12, wherein, In the forming process, the adhesive layer is heated and a bar coater is pressed against one side, thereby forming a recess extending in one direction along the in-plane direction of the side as the thinned portion.

15. The method for manufacturing a laminated film according to claim 12, wherein, In the forming process, the adhesive layer is partially cut by irradiating it with laser light, thereby forming a recess extending in one direction along the in-plane direction of the surface as the thinned portion.

16. The method for manufacturing a laminated film according to any one of claims 12 to 15, wherein, In the lamination process, the pressure-sensitive adhesive layer and the substrate layer are pre-cut to form an extended portion that extends further outward than the edge of the adhesive layer, and the extended portion is overlapped on one side of the substrate film.

17. A method for manufacturing a semiconductor chip with an adhesive layer, comprising: The preparation process involves preparing a semiconductor chip with an adhesive layer, wherein the semiconductor chip with an adhesive layer comprises a semiconductor chip and an adhesive layer disposed on one side of the semiconductor chip; and In the forming process, a thinning portion is formed on the opposite side of the adhesive layer to the semiconductor chip, reducing the volume of the adhesive layer.

18. The method for manufacturing a semiconductor chip with an adhesive layer according to claim 17, wherein, In the forming process, the volume of the adhesive layer is reduced according to the volume of the semiconductor chip to which the adhesive layer will be embedded.

19. The method for manufacturing a semiconductor chip with an adhesive layer according to claim 17, wherein, In the forming process, the opposite surface is cut by irradiating it with laser light, thereby forming a recess extending in one direction along the in-plane direction of the opposite surface as the thinned portion.

20. A method for manufacturing a semiconductor device, wherein, Prepare a semiconductor chip with an adhesive layer according to any one of claims 7 to 11 and a substrate on which the semiconductor chip is mounted, and heat-press the semiconductor chip with the adhesive layer onto the substrate with the adhesive layer facing the substrate, and form an embedded portion between the semiconductor chip with the adhesive layer and the substrate.

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