A ga n-based semiconductor material with photocatalytic methanol dehydrogenation performance and a preparation method and application thereof
CN122682624BActive Publication Date: 2026-10-27YANTAI UNIV
Patent Information
- Application Number
- CN202611150573.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2026-07-31
- Publication Date
- 2026-10-27
- Estimated Expiration
- 2046-07-31
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Figure CN122682624B_ABST
Abstract
The application discloses GaN-based semiconductor material with photocatalytic methanol dehydrogenation performance and a preparation method and application thereof, and belongs to the field of energy science and catalysis science and technology.The GaN-based semiconductor material is composed of two-dimensional nanosheets with a wurtzite structure and has a hierarchical petal cluster morphology.The GaN-based semiconductor material is doped with Mg and has a hierarchical petal cluster sheet structure, which can solve the problem of rapid recombination of photo-generated electron-hole pairs, effectively improve the specific surface area and carrier lifetime of the catalyst, and realize excellent photocatalytic methanol dehydrogenation performance.
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Citation Information
Patent Citations
Preparation method of three-dimensional semiconductor GaN nanoflower material
CN119976750A