Magnetron sputtering system and method of sputtering a seed layer within a tgv via

Abstract

The application relates to a magnetron sputtering system and a method for sputtering a seed layer in a TGV through hole, aiming at arc damage of a TGV glass substrate and uneven defects of a through hole coating. The system comprises a hollow carrier, an insulating adjustable needle plate and opposite target materials; the needle plate is insulated from the coating chamber, and the needle part is one-to-one corresponding to the through hole of the substrate and applies a negative bias voltage. The insulating needle plate can block the abnormal discharge circuit and avoid glass arc burning and cracking; the needle part matches the through hole to form a uniform local electric field, cooperates with a 3-8mm adjustable spacing, guides argon ions to fully bombard the inner wall of the through hole, greatly improves the step coverage, stabilizes the product interconnection resistance, and greatly improves the packaging reliability.

Description

Technical Field

[0001] This invention relates to the field of coating technology, and more particularly to a magnetron sputtering system and a method for sputtering a seed layer in a TGV via. Background Technology

[0002] TGV (Through Glass Via) technology creates through-hole micron-sized vias on an insulating glass substrate, which are then metallized to form vertical conductive paths. This effectively overcomes the interconnect density bottleneck of traditional packaging and is widely used in RF devices, MEMS sensors, and chiplet advanced packaging. Seed layer deposition is one of the three core steps in the TGV metallization process, and its quality directly determines the integrity of subsequent electroplating, the stability of interconnect resistance, and the long-term reliability of the device.

[0003] For vacuum deposition of seed layers in TGV glass through-holes, existing processes suffer from several core technical defects:

[0004] First, the TGV glass substrate is an insulating substrate. When the product is fixed with a solid carrier plate for magnetron sputtering coating, the overall insulating characteristics of the substrate will make it very easy for arc discharge to occur during the application of negative bias voltage. The arc will directly bombard the glass substrate, causing electrical damage to the glass substrate, severely damaging the integrity of the substrate, and even causing stress cracking of the glass substrate, which will greatly reduce the product yield and the long-term reliability of the device.

[0005] Secondly, the aspect ratio of the vias in the TGV glass substrates to be processed is generally large, usually above 5:1. Under the traditional solid substrate structure, the bias electric field distribution is uneven, and ions cannot bombard the inner wall of the via evenly. The via step coverage is poor, and the seed layer before electroplating is not thick enough and the coverage is incomplete at the depth of the via. This directly leads to the inability to achieve a complete conductive path in the subsequent electroplating filling, resulting in large fluctuations in interconnect resistance and substandard electrical performance of terminal products such as RF devices, MEMS sensors, and Chiplet advanced packaging.

[0006] Furthermore, traditional coating carriers and coating cavities lack insulation and isolation design. When a negative bias voltage is applied, current can easily flow through the cavity to form an abnormal loop. The intensity and distribution of the bias electric field cannot be precisely and independently controlled, making it difficult to match the coating requirements of glass through holes with different aspect ratios. The process debugging window is narrow, and the coating effect of through holes is unqualified under a large number of process parameter combinations, resulting in poor mass production stability.

[0007] Finally, existing continuous vacuum coating production lines lack a dedicated bias structure adapted to insulating glass substrates, making it impossible to flexibly adjust the spacing between the bias structure and the product substrate. Relying solely on a fixed bias voltage cannot evenly control the ion bombardment intensity inside the vias, making it difficult to achieve large-scale and stable production of high-quality TGV metallized glass substrates. Summary of the Invention

[0008] To address the aforementioned technical problems, this application provides a magnetron sputtering system and a method for sputtering a seed layer within a TGV via.

[0009] To achieve the above objectives, this application employs the following technical solution: This application provides a magnetron sputtering system, including A coating chamber, which is grounded or connected to a positive electrode to serve as an anode; A perforated carrier, which is insulated from the coating chamber, is used to carry and transport the part to be coated, and the part to be coated has a through hole; A needle plate is disposed in the coating chamber and is insulated from the coating chamber. The needle plate is connected to a bias power supply as the negative electrode. The needle plate is provided with needles facing the hollow carrier. The needles on the needle plate are arranged one-to-one with the through holes on the workpiece to be coated in the vertical direction. A spacing adjustment mechanism is provided in the coating chamber to adjust the vertical distance between the tip of the needle plate and the surface of the workpiece to be coated carried by the hollow carrier. The target material is disposed opposite to the needle plate in the coating chamber, and the conveying path of the cutout carrier is located between the needle plate and the target material.

[0010] As a further improvement of this application, the needles are arranged in an array, and the workpiece to be coated is also provided with an array of through holes.

[0011] As a further improvement of this application, the target material includes at least one Ti target and at least two Cu targets arranged sequentially along the transport direction of the part to be coated.

[0012] As a further improvement of this application, the system further includes: a vacuum pumping device connected to the coating chamber for evacuating the coating chamber.

[0013] As a further improvement of this application, the system further includes: an argon gas filling device, which is connected to the coating chamber and is used to supply argon gas to the coating chamber.

[0014] As a further improvement of this application, the magnetron sputtering system is a continuous line vacuum coating system, which further includes a wafer entry chamber, a first transition chamber, a first buffer chamber, and an etching chamber sequentially disposed at the front end of the coating chamber, and a second buffer chamber, a second transition chamber, and a wafer exit chamber sequentially disposed at the rear end of the coating chamber.

[0015] To achieve the above objectives, this application also provides a method for sputtering a seed layer within a TGV via, using a magnetron sputtering system as described above, comprising the following steps: S1. Install the part to be coated with through holes onto the hollow carrier, so that the part to be coated enters the coating chamber along the conveying direction; S2. Adjust the vertical distance from the tip of the needle plate to the surface of the workpiece to be coated by means of the spacing adjustment mechanism; S3. Evacuate the coating chamber and then fill it with argon gas; S4. Apply a negative bias to the needle plate, turn on the sputtering target, and use the needle to guide the plasma to deposit the adhesive layer and seed layer in the through hole in sequence. Then, allow the coated part to continue to be ejected along the conveying direction.

[0016] As a further improvement of this application, in step S2, the vertical distance from the tip of the needle plate to the surface of the workpiece to be coated is adjusted to 3mm to 8mm; in step S3, the coating chamber is evacuated to 5.0×10⁻⁶ mm. -6 mbar, then argon gas is introduced into the coating chamber at a flow rate of 1000 SCCM to 1200 SCCM. After argon introduction, the vacuum degree of the coating chamber is 1.5 × 10 mbar. -3 mbar ~ 2.5 × 10 -3 mbar; in step S4, the negative bias voltage is 110V to 130V.

[0017] As a further improvement of this application, the sputtering target includes a Ti target and a Cu target; in step S4, the Ti target is first turned on and the sputtering process parameters of the Ti target are controlled to deposit a Ti layer with a thickness greater than 100 nm in the through hole of the part to be coated; then the Cu target is turned on and the sputtering process parameters of the Cu target are controlled to deposit a Cu layer with a thickness greater than 1000 nm in the through hole of the part to be coated.

[0018] As a further improvement of this application, in step S4, the power applied to the Ti target is 10KW to 12KW, and the power applied to the Cu target is 11KW to 13KW.

[0019] The beneficial effect of this application is that the magnetron sputtering system and the TGV through-hole seed layer sputtering method of this application synergistically solve the industry pain points of arc damage in TGV coating on insulating glass substrates, poor film coverage on the inner wall of through-holes, and narrow mass production process window.

[0020] The hollow carrier creates an electric field above and below the through-hole, and is paired with an adjustable insulating needle plate negative bias structure. The coating cavity acts as the anode, and the needle array forms a uniform local electric field corresponding to the through-hole. This structurally cuts off abnormal discharge circuits, avoiding arc burns and stress cracking on the glass substrate, and significantly improving product yield. The distance between the needle plate and the substrate can be flexibly adjusted from 3 to 8 mm. With a controllable negative bias of 110 to 130 V, argon ions are directionally guided to fully bombard the inner wall of the micron-sized through-hole, greatly improving the through-hole step coverage. This stably achieves a Ti adhesion layer thickness of over 100 nm, a Cu seed layer thickness of over 1000 nm, and a film adhesion strength that meets the 5B standard.

[0021] The continuous multi-cavity production line, combined with appropriate vacuum, argon flow rate and target power parameters, can stably control the sputtering environment and avoid defects such as impurities and uneven film thickness. Ti and double Cu targets are arranged along the transport direction to continuously complete the deposition of double seed layers. It is suitable for the mass production of 60-100μm array through-hole glass substrates, effectively reducing interconnect resistance fluctuations and ensuring the long-term electrical reliability of RF devices, MEMS, and Chiplet advanced packaging terminal products. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the magnetron sputtering system in Example 1; Figure 2 This is a schematic diagram showing the positional relationship between the hollow carrier, the part to be coated, and the needle plate in Example 1; Figure 3 These are scanning electron microscope (SEM) images of the cross-section of the through-hole of the part to be coated after sputtering in Example 4; Figure 4 This is a scanning electron microscope (SEM) image of the cross-section of the through-hole of the part to be coated after sputtering, as shown in Comparative Example 1. Figure 5 This is a cross-sectional scanning electron microscope image of the through hole of the part to be coated after sputtering, as shown in Comparative Example 2.

[0023] In the diagram: 1. Infeed chamber; 2. First transition chamber; 3. First buffer chamber; 4. Etching chamber; 5. Coating chamber; 6. Second buffer chamber; 7. Second transition chamber; 8. Outfeed chamber; 9. Cutout carrier; 10. Part to be coated; 11. Needle plate. Detailed Implementation

[0024] To address the problems in the background art, this application provides a magnetron sputtering system, including... A coating chamber, which is grounded or connected to a positive electrode to serve as an anode; A perforated carrier, which is insulated from the coating chamber, is used to carry and transport the part to be coated, and the part to be coated has a through hole; A needle plate, which is disposed in the coating chamber and insulated from it, is connected to a bias power supply as the negative electrode. The needle plate has needles facing the cutout carrier, and the needles on the needle plate are arranged one-to-one with the through holes on the workpiece to be coated in the vertical direction. A spacing adjustment mechanism, disposed in the coating chamber, is used to adjust the vertical distance between the tip of the needle on the needle plate and the surface of the workpiece to be coated carried by the cutout carrier. The target material is disposed opposite to the needle plate in the coating chamber, and the conveying path of the cutout carrier is located between the needle plate and the target material.

[0025] Preferably, the bias power supply is a pulse bias power supply; the hollow carrier includes an outer support frame, the edge of the part to be coated overlaps the outer support frame, and the area of ​​the part to be coated with through holes is suspended within the outer support frame; the part to be coated described in this application is not limited to glass substrates, but can also be insulating substrates such as ceramic substrates, resin substrates, and organic polymer substrates.

[0026] Based on the above technical solution, this invention addresses the pain points encountered in coating TGV through-hole insulating glass substrates, especially those with high aspect ratio TGV through-holes, such as those with an aspect ratio greater than 5. A perforated carrier replaces the traditional solid carrier plate, and the perforated structure opens up the space above and below the through-hole, avoiding the solid plate blocking the electric field and ensuring that argon ions can penetrate the interior of the through-hole. A needle plate with matching needles is independently set in the coating chamber and insulated from the chamber body. The coating chamber acts as the anode, and the needle plate is connected to a bias power supply, acting as the negative electrode. A target material positioned opposite the needle plate provides the sputtering metal source. During coating, the needles are aligned with the through-hole to form a uniform negative bias electric field, guiding argon ions to bombard the inner wall of the through-hole. Simultaneously, the insulated perforated carrier and insulated needle plate structure cut off abnormal discharge circuits, suppressing electrical damage and cracking caused by arc discharge on the insulating glass substrate, thus solving the problem of uneven film coverage on the inner wall of the through-hole, especially for high aspect ratio through-holes.

[0027] In an optional implementation, the needles are arranged in an array, and the workpiece to be coated also has an array of through-holes. Further defining the workpiece as having arrayed through-holes adapts to the mass production of TGV glass substrates. The arrayed through-holes correspond to the arrayed needles on the needle plate, with each needle individually aligned with a single through-hole. This allows for the simultaneous formation of a uniform and independent local negative bias electric field across the entire substrate, preventing interference between the electric fields of individual through-holes. Compared to a scattered through-hole layout, the array-matched structure unifies the ion bombardment intensity of all micropores on the entire substrate, ensuring uniform Ti and Cu seed layer coating thickness on the inner walls of all arrayed through-holes. This is particularly suitable for continuous batch coating production of large-size glass substrates (360×225×0.6mm).

[0028] In an optional implementation, the target material includes at least one Ti target and at least two Cu targets arranged sequentially along the transport direction of the workpiece to be coated. The sequential arrangement of at least one Ti target and at least two Cu targets along the transport direction matches the requirements of the TGV metallization double-layer seed layer process. The Ti layer is deposited first as an adhesion layer; Ti metal has stronger adhesion to the glass substrate, ensuring the 5B adhesion standard of the film layer. Subsequently, the two Cu targets are deposited in series to form a copper seed layer. The synergy of the two targets allows for rapid accumulation of a copper film thicker than 1000 nm, adapting to the continuous line transport and progressive coating rhythm. By arranging the targets along the transport sequence, Ti undercoating and double-layer Cu thickening are completed sequentially during the uniform movement of the substrate, eliminating the need for repeated workpiece transfer and balancing film structure requirements with continuous production line efficiency.

[0029] In an optional implementation, the system further includes a vacuum pumping device connected to the coating chamber for evacuating the coating chamber. Magnetron sputtering systems require a high vacuum environment to remove air impurities. The vacuum pumping device can reduce the pressure inside the chamber to 5.0 × 10⁻⁶. -6 The mbar ultra-high vacuum removes contaminants such as oxygen and water vapor from the cavity, preventing oxidation of Ti and Cu targets and avoiding pinholes and impurity defects in the film during the coating process. The high vacuum environment also reduces argon ion collision losses, improves ion directional movement, ensures ion bombardment efficiency inside the TGV vias, and stabilizes the seed layer coating quality.

[0030] In an optional implementation, the system further includes an argon gas filling device connected to the coating chamber for supplying argon gas to the coating chamber. The argon gas is the core process gas for magnetron sputtering ionization bombardment. The argon gas filling device can accurately control the argon gas flow rate. After entering the high-vacuum chamber, the argon gas ionizes to form argon ions. A negative bias electric field drives the argon ions to bombard the target material at high speed, sputtering and stripping Ti and Cu metal atoms to deposit onto the substrate and the inner walls of the vias. A stable argon gas supply can accurately regulate the working gas pressure within the chamber, maintain a balanced ion ionization concentration, ensure uniform sputtering rates across the entire substrate and all vias, and avoid film thickness deviations.

[0031] In an optional implementation, the magnetron sputtering system is a continuous line vacuum coating system, further comprising a wafer entry chamber, a first transition chamber, a first buffer chamber, and an etching chamber sequentially located at the front end of the coating chamber, and a second buffer chamber, a second transition chamber, and a wafer exit chamber sequentially located at the rear end of the coating chamber. The coating chamber is equipped with multiple functional cavities before and after it, forming a continuous vacuum production line. This facilitates the removal of surface impurities through pretreatment to improve film adhesion. The wafer exits after gradual depressurization in the rear buffer and transition chambers, avoiding disruption of the high vacuum of the coating chamber by a single large open cavity, reducing vacuuming waiting time, isolating external moisture and oxygen contamination, adapting to uninterrupted continuous mass production, and stabilizing the through-hole coating process environment.

[0032] To achieve the above objectives, this application also provides a method for sputtering a seed layer within a TGV via, using a magnetron sputtering system as described above, comprising the following steps: S1. Install the part to be coated with through holes onto the hollow carrier, so that the part to be coated enters the coating chamber along the conveying direction; S2. Adjust the vertical distance from the tip of the needle plate to the surface of the workpiece to be coated by means of the spacing adjustment mechanism; S3. Evacuate the coating chamber and then fill it with argon gas; S4. Apply a negative bias to the needle plate, turn on the sputtering target, and use the needle to guide the plasma to deposit the adhesive layer and seed layer in the through hole in sequence. Then, allow the coated part to continue to be ejected along the conveying direction.

[0033] Based on the above technical solutions, if the aperture of the via is too small, the internal channel is narrow, and argon ions in the plasma cannot penetrate to the bottom of the via, resulting in missing film at the bottom of the via and insufficient step coverage. If the aperture of the via is too large, the local negative bias electric field formed by the needles of the needle plate is prone to diffuse outward, resulting in insufficient ion bombardment intensity inside the via and inability to deposit a film layer that meets the thickness requirements. Relying on the adjustable spacing needle plate structure, the vertical distance between the needle tip and the surface of the workpiece to be coated can be flexibly adjusted. Combined with the negative bias applied by the needle plate, a stable and concentrated directional electric field can be constructed in the via region, effectively constraining the plasma distribution and guiding argon ions to fully reach the inner wall of the via. This balances the ion penetration ability and the electric field confinement effect, allowing the entire inner wall of the via to be uniformly deposited with a metal film layer, ensuring complete film coating of the via, especially high aspect ratio vias, and improving the subsequent electroplating filling effect and the electrical reliability of the substrate.

[0034] In an optional implementation, in step S2, the vertical distance from the tip of the needle plate to the surface of the workpiece to be coated is adjusted to 3mm to 8mm; in step S3, the coating chamber is evacuated to 5.0×10⁻⁶ mm. -6 mbar, then argon gas is introduced into the coating chamber at a flow rate of 1000 SCCM to 1200 SCCM. After argon introduction, the vacuum degree of the coating chamber is 1.5 × 10 mbar. - 3 mbar ~ 2.5 × 10 -3 mbar; in step S4, the negative bias voltage is 110V to 130V.

[0035] Based on the above technical solution, a vacuum environment is beneficial for impurity removal. An argon flow rate below 1000 SCCM will result in insufficient ionization ions and a low through-hole coating rate. A flow rate above 1200 SCCM will result in too many gas molecules and increased ion collision loss. This argon flow rate parameter range can balance ion concentration and movement distance, allowing argon ions to reach the bottom of the through-hole smoothly, especially the bottom of high aspect ratio through-holes, and stabilize the film deposition rate.

[0036] In an optional implementation, the sputtering target includes a Ti target and a Cu target; the Ti target and Cu target are respectively connected to a DC pulse power supply, which can be a Pulsed DC 20 KW. In step S4, the Ti target is first turned on, and the sputtering process parameters of the Ti target are controlled to deposit a Ti layer with a thickness greater than 100 nm in the through-hole of the part to be coated; then the Cu target is turned on, and the sputtering process parameters of the Cu target are controlled to deposit a Cu layer with a thickness greater than 1000 nm in the through-hole of the part to be coated. Preferably, the power applied to the Ti target is 10 KW to 12 KW, and the power applied to the Cu target is 11 KW to 13 KW. If the Ti target power is lower than 10 KW, the sputtering rate is insufficient to achieve a 100 nm adhesion layer thickness; if it is higher than 12 KW, it is easy to cause coarse Ti film grains, reducing the adhesion to the glass. The Cu target power range ensures the synergistic deposition of the two Cu targets, rapidly accumulating a conductive copper layer of over 1000 nm. The power is matched with a bias voltage of 110-130V and a preset needle plate spacing to synchronously control the amount of metal atom sputtering and the intensity of ion bombardment, so as to achieve uniform film thickness on the inner wall of the through hole.

[0037] The technical solution of this application will be clearly and completely described below with reference to the embodiments of this application. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0038] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to specific embodiments.

[0039] Example 1 This embodiment provides a magnetron sputtering system, which is a continuous cavity coating device, such as... Figure 1 and Figure 2 As shown, the equipment includes, in sequence, a wafer entry chamber 1, a first transition chamber 2, a first buffer chamber 3, an etching chamber 4, a coating chamber 5, a second buffer chamber 6, a second transition chamber 7, and a wafer exit chamber 8. The coating chamber 5 is connected to the positive electrode. The continuous cavity coating equipment is also equipped with a cutout carrier 9, a needle plate 11, a spacing adjustment mechanism (not shown in the figure), and a target material. The cutout carrier 9 is insulated from the coating chamber 5 and is used to carry and transport the workpiece 10 to be coated. The workpiece 10 to be coated has an array of through holes. In this embodiment, the through holes are illustrated with a depth-to-width ratio of 7. The cutout carrier 9 is used to expose the through holes on the workpiece 10 to be coated. The needle plate 11 is disposed inside the coating chamber 5 and is insulated from the coating chamber 5. The needle plate 11 is connected to a bias power supply as the negative electrode. The needle plate 11 is provided with needles facing the hollow carrier 9. The needles correspond one-to-one with the through holes on the workpiece 10 to be coated in the vertical projection direction. A spacing adjustment mechanism is located in the coating chamber 5 and is used to adjust the vertical distance between the tip of the needle plate and the surface of the workpiece 10 to be coated carried by the hollow carrier 9. The target material and the needle plate 11 are disposed opposite to each other in the coating chamber 5, and the conveying path of the hollow carrier 9 is located between the needle plate 11 and the target material. The target material includes one Ti target material and two Cu targets arranged sequentially along the transport direction of the part to be coated.

[0040] The magnetron sputtering system further includes: a vacuum pumping device and an argon gas filling device, wherein: The vacuum pumping device is connected to the first transition chamber 2, the first buffer chamber 3, the etching chamber 4, the coating chamber 5, the second buffer chamber 6, and the second transition chamber 7, and is used to evacuate each chamber; the argon gas filling device is connected to the coating chamber 5 and is used to supply argon gas to the coating chamber 5.

[0041] Example 2 This embodiment provides a method for sputtering a seed layer inside a TGV via, including the following steps: A1. Install the needle plate, one Ti target and two Cu targets into the coating chamber respectively; A2. Install the workpiece to be coated with through holes onto the cutout carrier located in the loading chamber. The workpiece to be coated is a glass substrate. The diameter of the through holes in the workpiece to be coated is 60μm, and the depth-to-width ratio of the through holes is 7:1. Make the workpiece to be coated enter the coating chamber along the conveying direction. Adjust the vertical distance from the tip of the needle of the needle plate to the horizontal plane where the surface of the workpiece to be coated is located to 3mm, so that the workpiece to be coated returns to the loading chamber. A3. Evacuate the coating chamber to 5.0 × 10⁻⁶. -6 mbar, then argon gas is introduced into the coating chamber at a flow rate of 1000 SCCM. After the argon gas is introduced, the vacuum degree of the coating chamber is 1.5 × 10 mbar. -3 mbar; A4. After the parts to be coated are sequentially fed into the coating chamber along the conveying direction, the negative bias voltage of the needle plate is turned on. The magnitude of the negative bias voltage is set to 110V. Then, the Ti target is turned on, and the power applied to the Ti target is 10KW. A Ti layer is deposited in the through hole of the part to be coated, and the thickness of the Ti layer is 110nm. Then, the Cu target is turned on, and the power applied to the Cu target is 11KW. A Cu layer is deposited in the through hole of the part to be coated, and the thickness of the Cu layer is 1100nm. Then, the coated parts are continued to be ejected along the conveying direction to obtain the coated glass substrate.

[0042] Example 3 This embodiment provides a method for sputtering a seed layer inside a TGV via, including the following steps: A1. Install the needle plate, one Ti target and two Cu targets into the coating chamber respectively; A2. Install the workpiece to be coated with through holes onto the cutout carrier located in the loading chamber. The workpiece to be coated is a glass substrate. The diameter of the through holes in the workpiece to be coated is 100μm, and the depth-to-width ratio of the through holes is 7:1. Make the workpiece to be coated enter the coating chamber along the conveying direction. Adjust the vertical distance from the tip of the needle of the needle plate to the horizontal plane where the surface of the workpiece to be coated is located to 8mm, so that the workpiece to be coated returns to the loading chamber. A3. Evacuate the coating chamber to 5.0 × 10⁻⁶. -6 mbar, then argon gas is introduced into the coating chamber at a flow rate of 1200 SCCM. After the argon gas is introduced, the vacuum degree of the coating chamber is 2.5 × 10 mbar. -3 mbar; A4. After the parts to be coated are sequentially fed into the coating chamber along the conveying direction, the negative bias voltage of the needle plate is turned on. The magnitude of the negative bias voltage is set to 130V. Then, the Ti target is turned on, and the power applied to the Ti target is 12KW. A Ti layer is deposited in the through hole of the part to be coated, and the thickness of the Ti layer is 130nm. Then, the Cu target is turned on, and the power applied to the Cu target is 13KW. A Cu layer is deposited in the through hole of the part to be coated, and the thickness of the Cu layer is greater than 1300nm. Then, the coated parts are continued to be ejected along the conveying direction to obtain the coated glass substrate.

[0043] Example 4 This embodiment provides a method for sputtering a seed layer inside a TGV via, including the following steps: A1. Install the needle plate, one Ti target and two Cu targets into the coating chamber respectively; A2. Install the workpiece to be coated with through holes onto the cutout carrier located in the loading chamber. The workpiece to be coated is a glass substrate. The diameter of the through holes in the workpiece to be coated is 80μm, and the depth-to-width ratio of the through holes is 7:1. Make the workpiece to be coated enter the coating chamber along the conveying direction. Adjust the vertical distance from the tip of the needle of the needle plate to the horizontal plane where the surface of the workpiece to be coated is located to 5mm, so that the workpiece to be coated returns to the loading chamber. A3. Evacuate the coating chamber to 5.0 × 10⁻⁶. -6 mbar, then argon gas is introduced into the coating chamber at a flow rate of 1000 SCCM. After the argon gas is introduced, the vacuum degree of the coating chamber is 1.5 × 10 mbar. -3 mbar; A4. After the parts to be coated are sequentially fed into the coating chamber along the conveying direction, the negative bias voltage of the needle plate is turned on and the magnitude of the negative bias voltage is set to 120V. Then, the Ti target is turned on and the power applied to the Ti target is 11KW. A Ti layer is deposited in the through hole of the part to be coated, and the thickness of the Ti layer is 120nm. Then, the Cu target is turned on and the power applied to the Cu target is 12KW. A Cu layer is deposited in the through hole of the part to be coated, and the thickness of the Cu layer is greater than 1200nm. Then, the coated parts are continued to be ejected along the conveying direction to obtain the coated glass substrate.

[0044] In this embodiment, the cross-section of the coated glass substrate was also analyzed by scanning electron microscopy (SEM). The SEM image of the cross-section with through holes is shown below. Figure 3 As shown. By Figure 3 As can be seen, the through holes in the glass substrate are completely filled with metal along the radial direction. This glass substrate with metal-filled through holes has excellent electrical interconnectivity, that is, the glass substrate prepared using the technical solution of Example 4 has excellent electrical performance.

[0045] Comparative Example 1 The difference between this comparative example and Example 4 is that the vertical distance from the tip of the needle on the needle plate to the horizontal plane where the surface of the workpiece to be coated is 2mm.

[0046] In this comparative example, the cross-section of the coated glass substrate was also analyzed by scanning electron microscopy (SEM). The SEM image of the cross-section with through holes is shown below. Figure 4 As shown. By Figure 4 It can be seen that along the radial direction of the through hole in the glass substrate, there is a section in the middle of the through hole that is empty, indicating that the through hole of the glass substrate prepared by the technical solution of Comparative Example 1 is not filled with metal. The glass substrate with through holes that are not fully filled with metal has poor conductivity, that is, poor electrical interconnection.

[0047] Comparative Example 2 The difference between this comparative example and Example 4 is that the vertical distance from the tip of the needle plate to the horizontal plane of the surface of the workpiece to be coated is 9mm.

[0048] In this comparative example, the cross-section of the coated glass substrate was also analyzed by scanning electron microscopy (SEM). The SEM image of the cross-section with through holes is shown below. Figure 5 As shown. By Figure 5 It can be seen that along the radial direction of the through-hole in the glass substrate, there is also a small section of empty space in the middle of the through-hole, indicating that the through-hole of the glass substrate prepared using the technical solution of Comparative Example 2 is not completely filled with metal. Similarly, the glass substrate with incompletely filled metal through-holes has poor conductivity, that is, poor electrical interconnectivity.

[0049] The cross-sectional scanning electron microscope image of the glass substrate in Example 4 is only one representative example of the technical solution of this application. The through-holes of the glass substrate prepared by the technical solution of this application can all be filled with metal. By comparing Comparative Example 1, Comparative Example 2 and Example 4, it can be seen that the technical solution of this application can produce high-quality TGV metallized glass substrates with high electrical interconnectivity.

[0050] Although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0051] The detailed descriptions listed above are merely specific descriptions of feasible implementation methods of this application, and are not intended to limit the scope of protection of this application. All equivalent implementation methods or modifications made without departing from the spirit of the art of this application should be included within the scope of protection of this application.

Claims

1. A magnetron sputtering system, characterized in that, include A coating chamber, which is grounded or connected to a positive electrode to serve as an anode; A perforated carrier, which is insulated from the coating chamber, is used to carry and transport the part to be coated, and the part to be coated has a through hole; A needle plate is disposed in the coating chamber and is insulated from the coating chamber. The needle plate is connected to a bias power supply as the negative electrode. The needle plate is provided with needles facing the hollow carrier. The needles on the needle plate are arranged one-to-one with the through holes on the workpiece to be coated in the vertical direction. A spacing adjustment mechanism is provided in the coating chamber to adjust the vertical distance between the tip of the needle plate and the surface of the workpiece to be coated carried by the hollow carrier. The target material is disposed opposite to the needle plate in the coating chamber, and the conveying path of the cutout carrier is located between the needle plate and the target material.

2. The magnetron sputtering system according to claim 1, characterized in that, The needles are arranged in an array, and the workpiece to be coated is also provided with an array of through holes.

3. The magnetron sputtering system according to claim 1, characterized in that, The target material includes at least one Ti target and at least two Cu targets arranged sequentially along the transport direction of the part to be coated.

4. The magnetron sputtering system according to any one of claims 1-3, characterized in that, The system further includes a vacuum pumping device connected to the coating chamber for evacuating the coating chamber.

5. The magnetron sputtering system according to any one of claims 1-3, characterized in that, The system further includes an argon gas filling device, which is connected to the coating chamber and is used to supply argon gas to the coating chamber.

6. The magnetron sputtering system according to any one of claims 1-3, characterized in that, The magnetron sputtering system is a continuous line vacuum coating system, and also includes a wafer loading chamber, a first transition chamber, a first buffer chamber, and an etching chamber arranged sequentially at the front end of the coating chamber, and a second buffer chamber, a second transition chamber, and a wafer exit chamber arranged sequentially at the rear end of the coating chamber.

7. A method for sputtering a seed layer within a TGV via, characterized in that, Using the magnetron sputtering system as described in any one of claims 1-6 includes the following steps: S1. Install the part to be coated with through holes onto the hollow carrier, so that the part to be coated enters the coating chamber along the conveying direction; S2. Adjust the vertical distance from the tip of the needle plate to the surface of the workpiece to be coated by means of the spacing adjustment mechanism; S3. Evacuate the coating chamber and then fill it with argon gas; S4. Apply a negative bias to the needle plate, turn on the sputtering target, and use the needle to guide the plasma to deposit the adhesive layer and seed layer in the through hole in sequence. Then, allow the coated part to continue to be ejected along the conveying direction.

8. The method according to claim 7, characterized in that, In step S2, the vertical distance from the tip of the needle plate to the surface of the workpiece to be coated is adjusted to 3mm to 8mm; in step S3, the coating chamber is evacuated to 5.0×10⁻⁶ mm. -6 mbar, then argon gas is introduced into the coating chamber at a flow rate of 1000 SCCM to 1200 SCCM. After argon introduction, the vacuum degree of the coating chamber is 1.5 × 10 mbar. -3 mbar ~ 2.5 × 10 -3 mbar; in step S4, the negative bias voltage is 110V to 130V.

9. The method according to claim 7, characterized in that, The sputtering target includes a Ti target and a Cu target. In step S4, the Ti target is first turned on, and the sputtering process parameters of the Ti target are controlled to deposit a Ti layer with a thickness greater than 100 nm in the through hole of the part to be coated. Then the Cu target is turned on, and the sputtering process parameters of the Cu target are controlled to deposit a Cu layer with a thickness greater than 1000 nm in the through hole of the part to be coated.

10. The method according to claim 9, characterized in that, In step S4, the power applied to the Ti target is 10KW to 12KW, and the power applied to the Cu target is 11KW to 13KW.

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