Wafer thin film deposition method and wafer thin film deposition machine

Abstract

The application provides a wafer thin film deposition method and a wafer thin film deposition machine, which comprises the following steps: removing water vapor on the surface of the wafer in a water vapor removal chamber, sending the wafer into a cooling treatment module, and performing cooling treatment on the surface of the wafer. The cooling treatment module comprises a transmission chamber and a cooling chamber. The wafer is transferred to the cooling chamber after natural cooling in the transmission chamber for a first preset time length, and is cooled in the cooling chamber. The wafer after the cooling treatment is sent into an aluminum deposition chamber, and aluminum thin film is deposited on the surface of the wafer in the aluminum deposition chamber. Therefore, in the wafer transfer process, the wafer is cooled by the transmission chamber and the cooling chamber with different temperature conditions, and then is moved to the aluminum deposition chamber. When the aluminum thin film is deposited on the surface of the wafer, the surface of the wafer has a lower temperature, so that the aluminum thin film formed by the application is smoother, and the breakdown voltage of the capacitor structure formed by using the wafer is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method for thin film deposition on wafers and a thin film deposition machine for wafers. Background Technology

[0002] The capacitor structure (MIM structure) is a key passive component in integrated circuits, and the stability of its breakdown voltage directly determines the reliability of high-voltage and high-precision analog circuits.

[0003] However, in the traditional process of depositing aluminum thin films on wafers to form capacitor structures, the surface roughness of the aluminum film can cause a "sharp effect," resulting in a severe concentration of local electric fields, which can cause the capacitor to break down prematurely at lower voltages. This has become a major process bottleneck restricting the stability and improvement of MIM capacitor performance. Summary of the Invention

[0004] This invention provides a method for thin film deposition on a wafer and a thin film deposition machine for wafers. By reducing the temperature of the wafer surface when depositing aluminum thin film onto the wafer surface, the formed aluminum thin film becomes smoother.

[0005] According to a first aspect of the present invention, a method for thin film deposition on a wafer is provided, comprising: The wafer is fed into the degassing chamber; The degassing chamber removes water vapor from the surface of the wafer. After removing moisture from the wafer surface, the wafer is sent to a cooling module where the wafer surface is cooled. The cooling module includes a transfer chamber and a cooling chamber. The wafer is transferred to the cooling chamber after naturally cooling in the transfer chamber for a first preset time, where it is cooled down. The cooled wafer is then fed into the aluminum deposition chamber. In the aluminum deposition chamber, an aluminum thin film is deposited onto the surface of the wafer.

[0006] Optionally, the cooling chamber includes a heat dissipation base and a gas chamber, the heat dissipation base is located inside the gas chamber, the heat dissipation base is connected to a water cooling circulation system outside the gas chamber, the gas chamber is connected to a vacuum system outside the chamber, and the wafer is placed on the heat dissipation base; Cooling and reducing temperature in the cooling chamber includes: The wafer is placed on the heat dissipation base and left to stand for a second preset time; An inert gas is introduced into the gas chamber for heat exchange with the surface of the wafer, and the duration of the inert gas introduction is a third preset duration. The inert gas is removed using a vacuum system; The heat dissipation base is cooled by a water-cooling circulation system to reduce the temperature of the wafer surface.

[0007] Optionally, the first preset duration is 195s-205s; the second preset duration is 1s-3s; and the third preset duration is 60s-80s.

[0008] Optionally, the inert gas includes helium.

[0009] Optionally, cooling is performed in the cooling chamber, including cooling the wafer to 195°C~205°C in the cooling chamber.

[0010] Optionally, while cooling the wafer surface, the method further includes: Remove oxides from the surface of the aluminum target.

[0011] According to a second aspect of the present invention, a wafer thin film deposition apparatus is provided for use in the wafer thin film deposition method as described above, comprising: A degassing chamber is used to remove moisture from the surface of the wafer; A cooling module is used to cool the surface of the wafer. An aluminum deposition chamber for depositing a thin aluminum film onto the surface of the wafer; A robotic arm is used to transfer the wafer between the degassing chamber, the cooling processing module, and the aluminum deposition chamber.

[0012] Optionally, the cooling module includes: A transfer chamber is used to allow the wafer to cool naturally for a first preset time. The cooling chamber is used to cool the surface of the wafer.

[0013] Optionally, the cooling chamber includes: a gas chamber and a heat dissipation base located within the gas chamber; An inert gas is introduced into the gas chamber, and the inert gas exchanges heat with the surface of the wafer. The heat dissipation base is used to place the wafer.

[0014] Optionally, the thin film deposition equipment further includes: A vacuum system, connected to the gas chamber, is used to exhaust the inert gas from the gas chamber; A water-cooling circulation system, connected to the heat dissipation base, is used to perform water-cooling circulation on the heat dissipation base to cool the wafer.

[0015] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects: In the wafer thin film deposition method and wafer thin film deposition machine of the present invention, after removing moisture from the wafer surface in a degassing chamber, the wafer is sent to a cooling module for surface cooling. The cooling module includes a transfer chamber and a cooling chamber. After the wafer is naturally cooled in the transfer chamber for a first preset time, it is transferred to the cooling chamber for further cooling. The cooled wafer is then sent to an aluminum deposition chamber, where an aluminum thin film is deposited on the wafer surface. Therefore, during the wafer transfer process, the wafer is cooled by the transfer chamber and cooling chamber with different temperature conditions before being moved to the aluminum deposition chamber. This results in a lower wafer surface temperature during aluminum film deposition, leading to a smoother aluminum thin film and improved breakdown voltage of the capacitor structure formed using this wafer. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic flowchart of a wafer thin film deposition method according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the cooling chamber structure according to an embodiment of the present invention; Figure 3a This is a SEM (scanning electron microscope) image of an aluminum thin film surface in a traditional wafer thin film deposition method. Figure 3b SEM (scanning electron microscope) images of aluminum thin film surfaces obtained by extending the plasma delivery time from the aluminum deposition chamber to the aluminum target in a traditional wafer thin film deposition method. Figure 3c This image is a SEM (scanning electron microscope) image of an aluminum thin film surface in a conventional wafer thin film deposition method where a cooling wafer step is added between the wafer transfer from the degassing chamber and the aluminum deposition chamber. Figure 4a TEM (transmission electron microscope) image of a capacitor structure formed by a traditional wafer thin-film deposition method; Figure 4b This is a TEM (transmission electron microscope) image of the capacitor structure formed by the thin film deposition method on the wafer in this embodiment; Figure 5The diagram shows the breakdown voltage of a capacitor structure formed by a conventional wafer thin-film deposition method and the breakdown voltage of a capacitor structure formed by the wafer thin-film deposition method in this embodiment. Figure 6 This is a schematic diagram of the structure of a wafer thin film deposition machine according to an embodiment of the present invention. Detailed Implementation

[0018] As described in the background section, the present invention aims to solve the technical problem of how to improve the smoothness of aluminum thin film in order to improve the breakdown voltage of capacitor structure.

[0019] In traditional wafer thin film deposition methods, water vapor on the wafer surface is first removed in a degassing chamber, and then the wafer is transferred to a transport chamber. In the transport chamber, the wafer waits for the aluminum deposition chamber to spray plasma onto the aluminum target. After the aluminum deposition chamber sprays plasma onto the aluminum target, the wafer is transferred to the aluminum deposition chamber, where an aluminum thin film is deposited on the wafer surface.

[0020] In traditional wafer thin film deposition methods, when the wafer is sent from the degassing chamber into the aluminum deposition chamber, it is cooled by natural cooling in the transfer chamber. The temperature of the wafer surface is too high, which makes the aluminum film deposited on the wafer surface in the aluminum deposition chamber relatively rough. The surface of the aluminum film is not smooth enough, resulting in a low breakdown voltage of the capacitor structure formed.

[0021] In view of this, the present invention proposes a wafer thin film deposition method, which involves feeding the wafer into a degassing chamber; removing moisture from the wafer surface in the degassing chamber; after removing the moisture from the wafer surface, feeding the wafer into a cooling module, where the wafer surface is cooled; the cooling module includes a transfer chamber and a cooling chamber; the wafer is naturally cooled in the transfer chamber for a first preset time and then transferred to the cooling chamber for further cooling; the cooled wafer is then fed into an aluminum deposition chamber; and an aluminum thin film is deposited on the surface of the wafer in the aluminum deposition chamber. Therefore, during the wafer transfer process, the wafer is cooled by the transfer chamber and cooling chamber with different temperature conditions before being moved to the aluminum deposition chamber. This results in a lower wafer surface temperature during aluminum film deposition, leading to a smoother aluminum film and improved breakdown voltage of the capacitor structure formed using this wafer.

[0022] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0023] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0024] Please refer to Figure 1 The embodiments of the present invention provide a thin film deposition method for a wafer, which may include: S100: Send the wafer into the degassing chamber.

[0025] S200: Removes water vapor from the wafer surface in the degassing chamber.

[0026] In this embodiment, water vapor on the wafer surface is removed in a devaporation chamber. The temperature range of the devaporation chamber can be between 270°C and 280°C, and the vacuum degree of the devaporation chamber can be 8 × 10⁻⁶. -6 torr~1×10 -7 Torr controls the vacuum level of the degassing chamber at an ultra-high vacuum level to ensure that the wafer is not contaminated.

[0027] In this embodiment, the temperature range when the wafer leaves the degassing chamber can be 265°C to 275°C.

[0028] S300: After removing moisture from the wafer surface, the wafer is sent to the cooling module for cooling treatment. The cooling module includes a transfer chamber and a cooling chamber. The wafer is naturally cooled in the transfer chamber for a first preset time before being transferred to the cooling chamber for cooling.

[0029] In one embodiment, the first preset duration can be 195s-205s.

[0030] In this embodiment, setting the first preset duration within this range is beneficial for further reducing the temperature and will not excessively occupy the usage time of the transmission chamber.

[0031] In this embodiment, the natural cooling of the wafer in the transfer chamber is part of the overall cooling process, with the ultimate goal of ensuring a sufficiently low surface temperature when the wafer enters the aluminum deposition chamber. A lower deposition temperature helps form a smoother aluminum film (smaller grains), thereby reducing the "point effect" and improving the breakdown voltage of the capacitor structure. Furthermore, while the wafer is naturally cooling in the transfer chamber, other process steps can be performed, such as removing oxides from the aluminum target surface. In this way, the cooling operation does not require additional time from critical equipment (such as the cooling chamber), enabling parallel processing and shortening the overall processing cycle of a single wafer.

[0032] In one specific embodiment, please refer to Figure 2 The cooling chamber 210 may include a heat dissipation base 211 and a gas chamber 212. The heat dissipation base 211 is located inside the gas chamber 212. The heat dissipation base 211 is connected to a water cooling circulation system 214 outside the gas chamber 212. The gas chamber 212 is connected to a vacuum system 213 outside the gas chamber 212. The wafer is placed on the heat dissipation base 211.

[0033] As an optional embodiment, S310: Cooling and reducing temperature in the cooling chamber may include: S311: Place the wafer on the heat sink and let it stand for the second preset time.

[0034] In one embodiment, the second preset duration can be 1s to 3s.

[0035] In this embodiment, by placing the wafer on the heat sink for a second preset time, the wafer transferred from the transfer chamber can be pre-adapted to the temperature of the heat sink, allowing the wafer to undergo subsequent cooling in a stable state. Furthermore, by controlling the second preset time to a short period of 1 to 3 seconds before introducing inert gas, the wafer, which is at a high temperature, is prevented from reacting with other substances in the air for an extended period, thus avoiding the generation of contaminants.

[0036] S312: Inert gas is introduced into the gas chamber. The inert gas is used to exchange heat with the surface of the wafer. The duration of the inert gas introduction is the third preset duration.

[0037] In one example, the third preset duration is 60s to 80s.

[0038] In this embodiment, setting the third preset duration within this range can effectively cool the wafer surface without excessively occupying the usage time of the cooling chamber.

[0039] In one example, the inert gas may be argon (Ar). Of course, the invention is not limited thereto, and the inert gas may also be other inert gases such as helium (He), neon (Ne), krypton (Kr), xenon (Xe) or radon (Rn).

[0040] S313: Inert gas is discharged through a vacuum system.

[0041] In this embodiment, the inert gas is first exchanged with the wafer surface, and then the inert gas after heat exchange is carried out of the gas chamber through a vacuum system, which can reduce the temperature of the wafer surface.

[0042] S314: The heat dissipation base is cooled by water cooling circulation through a water cooling circulation system to cool the wafer surface.

[0043] In this embodiment, the surface of the wafer is cooled by combining a water-cooling circulation system and a vacuum system, which is beneficial for further and faster reduction of the wafer surface temperature.

[0044] In this embodiment, the surface temperature of the wafer is between 195°C and 205°C after being cooled by the cooling module, while the temperature of the aluminum deposition chamber for subsequent aluminum thin film deposition is between 265°C and 270°C. Under these conditions, the initial temperature of the wafer when it reaches the aluminum chamber for aluminum thin film deposition is relatively low. As a result, the wafer surface can obtain a thin film with smaller and smoother grains. This can reduce the tip effect of the capacitor formed using the wafer and improve the breakdown voltage of the capacitor.

[0045] As an optional implementation, the method may further include cooling the wafer surface while simultaneously performing the cooling process: S320: Removes oxides from the surface of aluminum target materials.

[0046] In this embodiment, while cooling the wafer surface, oxide removal is also performed on the surface of the aluminum target used in the aluminum deposition chamber. This effectively utilizes process time and shortens the processing cycle of a single wafer; at the same time, a clean target surface improves the quality and uniformity of subsequent sputtering film deposition, thereby enhancing device performance and product yield.

[0047] S400: The cooled wafer is fed into the aluminum deposition chamber.

[0048] S500: In the aluminum deposition chamber, a thin aluminum film is deposited onto the surface of the wafer.

[0049] As can be seen, this invention removes moisture from the wafer surface in a degassing chamber, then sends the wafer to a cooling module for surface cooling. The cooling module includes a transfer chamber and a cooling chamber. The wafer is naturally cooled in the transfer chamber for a first preset time before being transferred to the cooling chamber for further cooling. The cooled wafer is then sent to an aluminum deposition chamber, where an aluminum film is deposited on the wafer surface. Therefore, during wafer transfer, the wafer is cooled by the different temperature conditions in the transfer and cooling chambers before being moved to the aluminum deposition chamber. This results in a lower surface temperature on the wafer when the aluminum film is deposited, leading to a smoother aluminum film and improved breakdown voltage of the capacitor structure formed using this wafer.

[0050] In this embodiment, please refer to Figure 3a , Figure 3b as well as Figure 3c , Figure 3a This is a SEM (scanning electron microscope) image of an aluminum thin film surface in a traditional wafer thin film deposition method. Figure 3b SEM (scanning electron microscope) images of aluminum thin film surfaces obtained by extending the plasma delivery time from the aluminum deposition chamber to the aluminum target in a traditional wafer thin film deposition method. Figure 3c This image is a SEM (scanning electron microscope) image of an aluminum thin film surface in a conventional wafer thin film deposition method where a step of cooling the wafer surface is added between the transfer of the wafer from the degassing chamber to the aluminum deposition chamber.

[0051] Depend on Figures 3a-3c It can be seen that, compared with the aluminum thin film formed by traditional wafer thin film deposition methods ( Figure 3a Compared to the previous method, aluminum films deposited using the following two improved methods show significantly reduced surface roughness: one is to extend the plasma time in the aluminum deposition chamber, thereby extending the natural cooling time of the wafer in the transfer chamber. Figure 3b Secondly, based on this, a forced cooling step is further added in the cooling chamber. Figure 3c This indicates that lowering the wafer surface temperature before depositing aluminum thin films can effectively improve the smoothness of the aluminum films.

[0052] Please refer to Figure 4a as well as Figure 4b , Figure 4a This is a TEM (transmission electron microscope) image of a capacitor structure formed using traditional wafer thin-film deposition methods. Figure 4b This is a TEM (transmission electron microscope) image of the capacitor structure formed by the thin film deposition method on the wafer in this embodiment.

[0053] Depend on Figure 4a as well as Figure 4bIt can be seen that the surface roughness of the aluminum thin film formed by the wafer thin film deposition method in this embodiment is lower than that of the aluminum thin film of the capacitor structure formed by the conventional wafer thin film deposition method.

[0054] Please refer to Figure 5 , Figure 5 The diagram shows the breakdown voltage of a capacitor structure formed by a conventional wafer thin-film deposition method and the breakdown voltage of a capacitor structure formed by the wafer thin-film deposition method in this embodiment. Figure 5 The vertical axis represents the breakdown voltage. The blue icons represent the range of breakdown voltages of capacitor structures formed by conventional wafer thin-film deposition methods, while the orange icons represent the range of breakdown voltages of capacitor structures formed by the wafer thin-film deposition method in this embodiment.

[0055] Depend on Figure 5 As can be seen, the breakdown voltage of the capacitor structure formed by the wafer thin film deposition method in this embodiment is significantly higher than that of the capacitor structure formed by the traditional wafer thin film deposition method.

[0056] Accordingly, please refer to Figure 6 This embodiment also provides a wafer thin film deposition machine for use in the wafer thin film deposition method described above, which may include: a degassing chamber 100, a cooling processing module 200, an aluminum deposition chamber 300, and a robotic arm 400.

[0057] The degassing chamber 100 is used to remove water vapor from the wafer surface.

[0058] In this embodiment, the cooling module 200 is used to cool the wafer surface.

[0059] In this embodiment, the aluminum deposition chamber 300 is used to deposit an aluminum thin film onto the surface of the wafer.

[0060] In this embodiment, the robotic arm 400 is used to transfer wafers between the degassing chamber 100, the cooling processing module 200, and the aluminum deposition chamber 300.

[0061] As an example, in a wafer thin film deposition machine, there can be several degassing chambers 100 and several aluminum deposition chambers 300.

[0062] In this embodiment, water vapor on the wafer surface is removed in a devaporation chamber. The temperature range of the devaporation chamber can be between 270°C and 280°C, and the vacuum degree of the devaporation chamber can be 8 × 10⁻⁶. -6 torr~1×10 -7 Torr controls the vacuum level of the degassing chamber at an ultra-high vacuum level to ensure that the wafer is not contaminated.

[0063] In this embodiment, the temperature range when the wafer leaves the degassing chamber can be 265°C to 275°C.

[0064] In this embodiment, the wafer is fed into the cooling processing module 200 by the robotic arm 400 in the transfer chamber 220.

[0065] In one embodiment, please continue to refer to Figure 6 The cooling module 200 may include a transfer chamber 220 and a cooling chamber 210.

[0066] In this embodiment, the transmission chamber 220 is used to allow the wafer to cool naturally for a first preset time.

[0067] In this embodiment, the cooling chamber 210 is used to cool the wafer surface.

[0068] In one embodiment, the first preset duration can be 195s-205s.

[0069] In this embodiment, setting the first preset duration within this range is beneficial for further reducing the temperature and will not excessively occupy the usage time of the transmission chamber 220.

[0070] In this embodiment, the natural cooling of the wafer in the transfer chamber 220 is part of the overall cooling process, the ultimate goal of which is to ensure that the wafer's surface temperature is sufficiently low when it enters the aluminum deposition chamber 300. A lower deposition temperature helps form a smoother aluminum film (smaller grains), thereby reducing the "point effect" and improving the breakdown voltage of the capacitor structure. Furthermore, while the wafer is naturally cooling in the transfer chamber 220, other process steps can be performed during this time, such as removing oxides from the surface of the aluminum target. In this way, the cooling operation does not require additional time from critical equipment (such as the cooling chamber 210), enabling parallel processing and shortening the overall processing cycle of a single wafer.

[0071] In one specific embodiment, please refer to Figure 2 The cooling chamber 210 may include a gas chamber 212 and a heat dissipation base 211 located within the gas chamber 212.

[0072] In this embodiment, an inert gas is introduced into the gas chamber 212, and the inert gas exchanges heat with the wafer surface.

[0073] In this embodiment, the heat sink 211 is used to place the wafer.

[0074] In an alternative embodiment, the thin film deposition equipment may further include a vacuum system 213 and a water-cooling circulation system 214.

[0075] The vacuum system 213 is connected to the gas chamber 212, and the vacuum system 213 is used to discharge the inert gas in the gas chamber 212.

[0076] In this embodiment, the water cooling circulation system 214 is connected to the heat dissipation base 211. The water cooling circulation system 214 is used to perform water cooling circulation on the heat dissipation base 211 to cool the wafer.

[0077] In one example, the inert gas may be argon (Ar). Of course, the invention is not limited thereto, and the inert gas may also be other inert gases such as helium (He), neon (Ne), krypton (Kr), xenon (Xe) or radon (Rn).

[0078] In this embodiment, the inert gas is first exchanged with the wafer surface, and then the inert gas after heat exchange is carried out of the gas chamber through a vacuum system, which can reduce the temperature of the wafer surface.

[0079] In this embodiment, the surface of the wafer is cooled by combining a water-cooling circulation system and a vacuum system, which helps to further reduce the temperature of the wafer surface.

[0080] In this embodiment, the surface temperature of the wafer is between 195°C and 205°C after being cooled by the cooling module, while the temperature of the aluminum deposition chamber for subsequent aluminum film deposition is between 265°C and 270°C. Under these conditions, the initial temperature of the wafer when it reaches the aluminum chamber for aluminum film deposition is relatively low. As a result, the wafer surface can obtain a thin film with smaller and smoother grains, thereby reducing the tip effect of the capacitor formed using this wafer and increasing the breakdown voltage of the capacitor.

[0081] Since the wafer thin film deposition equipment in this embodiment corresponds to the wafer thin film deposition method described above, for the explanation of each feature structure in the wafer thin film deposition equipment in this embodiment, please refer to the detailed description of the corresponding part in the description of the wafer thin film deposition method described above, and it will not be repeated here.

[0082] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for thin film deposition on a wafer, characterized in that, include: The wafer is fed into the degassing chamber; The degassing chamber removes water vapor from the surface of the wafer. After removing moisture from the wafer surface, the wafer is sent to a cooling module where the wafer surface is cooled. The cooling module includes a transfer chamber and a cooling chamber. The wafer is transferred to the cooling chamber after naturally cooling in the transfer chamber for a first preset time, where it is cooled down. The cooled wafer is then fed into the aluminum deposition chamber. In the aluminum deposition chamber, an aluminum thin film is deposited onto the surface of the wafer.

2. The wafer thin film deposition method as described in claim 1, characterized in that, The cooling chamber includes a heat dissipation base and a gas chamber. The heat dissipation base is located inside the gas chamber. The heat dissipation base is connected to a water cooling circulation system outside the gas chamber. The gas chamber is connected to a vacuum system outside the chamber. The wafer is placed on the heat dissipation base. Cooling and reducing temperature in the cooling chamber includes: The wafer is placed on the heat dissipation base and left to stand for a second preset time; An inert gas is introduced into the gas chamber for heat exchange with the surface of the wafer, and the duration of the inert gas introduction is a third preset duration. The inert gas is removed using a vacuum system; The heat dissipation base is cooled by a water-cooling circulation system to reduce the temperature of the wafer surface.

3. The wafer thin film deposition method as described in claim 2, characterized in that, The first preset duration is 195s-205s; the second preset duration is 1s-3s; and the third preset duration is 60s-80s.

4. The wafer thin film deposition method as described in claim 2, characterized in that, The inert gas includes helium.

5. The thin film deposition method for a wafer as described in claim 1, characterized in that, Cooling and reducing temperature in the cooling chamber includes: cooling the wafer to 195°C~205°C in the cooling chamber.

6. The thin film deposition method for a wafer as described in claim 1, characterized in that, While cooling the wafer surface, the method further includes: Remove oxides from the surface of the aluminum target.

7. A wafer thin film deposition apparatus, characterized in that, A method for implementing a thin film deposition of a wafer as described in any one of claims 1 to 6, comprising: A degassing chamber is used to remove moisture from the surface of the wafer; A cooling module is used to cool the surface of the wafer. An aluminum deposition chamber for depositing a thin aluminum film onto the surface of the wafer; A robotic arm is used to transfer the wafer between the degassing chamber, the cooling processing module, and the aluminum deposition chamber.

8. The wafer thin film deposition apparatus as described in claim 7, characterized in that, The cooling module includes: A transfer chamber is used to allow the wafer to cool naturally for a first preset time. The cooling chamber is used to cool the surface of the wafer.

9. The wafer thin film deposition apparatus as described in claim 8, characterized in that, The cooling chamber includes: a gas chamber and a heat dissipation base located inside the gas chamber; An inert gas is introduced into the gas chamber, and the inert gas exchanges heat with the surface of the wafer. The heat dissipation base is used to place the wafer.

10. The wafer thin film deposition apparatus as described in claim 9, characterized in that, The thin film deposition equipment also includes: A vacuum system, connected to the gas chamber, is used to exhaust the inert gas from the gas chamber; A water-cooling circulation system, connected to the heat dissipation base, is used to perform water-cooling circulation on the heat dissipation base to cool the wafer.

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