Diamond single crystal growth apparatus and method of operation thereof

Abstract

The application belongs to the technical field of chemical metallurgy, and particularly relates to a diamond single crystal growth device and a working method thereof. The diamond single crystal growth device comprises a crucible, a seed crystal rod, a ring-shaped flow guide cylinder and a plasma gas path assembly. The ring-shaped flow guide cylinder has a ring-shaped chamber in the inside, and the chamber bottom surface of the ring-shaped chamber is obliquely arranged. A plurality of exhaust holes are uniformly arranged on the chamber bottom surface of the ring-shaped flow guide cylinder in the circumferential direction. The exhaust holes are obliquely arranged towards the direction away from the shaft center, and the length of each exhaust hole gradually decreases from the highest point to the lowest point of the chamber bottom surface. The diamond single crystal growth device and the working method thereof obliquely arrange the chamber bottom surface of the ring-shaped chamber, so that the exhaust holes close to the air inlet point have longer channels, and the exhaust holes away from the air inlet point have shorter channels. The resistance of the plasma gas flow in the exhaust holes with longer channels is greater, and the time of passing through is longer, so that the air outlet amounts of the exhaust holes are close to each other when the initial exhaust is performed.

Description

Technical Field

[0001] This invention belongs to the field of chemical metallurgy technology, specifically relating to single crystal growth, and more particularly to a diamond single crystal growth apparatus and its working method. Background Technology

[0002] Diamond, as a typical representative of ultra-wide bandgap semiconductor materials, has the characteristics of large bandgap, high carrier mobility, extremely high thermal conductivity, high breakdown electric field strength, and excellent radiation resistance.

[0003] Currently, the mainstream technologies for artificially synthesizing diamond single crystals include: high temperature and high pressure method, microwave plasma chemical vapor deposition method, and liquid phase method.

[0004] Top Seed Solution (TSSG) is an important form of liquid phase method. Its principle is to dissolve a carbon source in a metal flux to form a supersaturated solution, then immerse a diamond seed crystal in the solution, and control the temperature gradient to cause carbon to precipitate on the surface of the seed crystal and grow epitaxially into a diamond single crystal.

[0005] Currently, the technology for growing diamond using the liquid phase method faces the following technical bottlenecks: 1. Carbon has low solubility in metal solutions and is mainly in sp² hybrid form, making it difficult to achieve the transformation to sp³ hybrid diamond structure; 2. There is a lack of effective sp³ hybridization promotion mechanisms, resulting in insufficient driving force for diamond nucleation and growth; 3. The growth rate is slow, and the crystal quality is difficult to meet the requirements of electronic device applications; 4. The selection and ratio of solvent systems have not been optimized, and the carbon solubility and catalytic activity need to be improved.

[0006] To address the aforementioned issues, related technologies employ a co-solvent and dual carbon source supply strategy to achieve controllable growth of high-quality, large-size diamond single crystals.

[0007] In the dual carbon source supply scheme, the flow tube structure used in the Czochralski method for growing single crystals is referenced. An annular flow tube is set around the seed crystal rod, and several vertically downward gas outlet holes are opened on the lower surface of the annular flow tube. On the one hand, a large longitudinal temperature gradient is formed at the growth interface to meet the carbon supersaturation precipitation for diamond growth. On the other hand, the annular flow tube receives the carbon source-containing gas and supplies the received gas to the solution surface near the seed crystal.

[0008] However, in actual production, the structure of the aforementioned annular guide tube can cause polycrystalline formation and solvent encapsulation on the surface of diamond due to the uneven distribution of carbon-containing active groups in the supplied gas, the uneven gas output at each outlet during initial exhaust, and the liquid surface fluctuation caused by vertical jetting from the outlet.

[0009] Therefore, how to solve the technical problems of polycrystalline and solvent encapsulation that are prone to occur during the production of diamond using a dual carbon source supply method is a problem that urgently needs to be solved by those skilled in the art.

[0010] It should be noted that the information disclosed in this background section is only for understanding the background technology of the present application concept, and therefore, the above description is not considered to constitute prior art information. Summary of the Invention

[0011] This disclosure provides at least one diamond single crystal growth apparatus and its operating method.

[0012] In a first aspect, embodiments of this disclosure provide a diamond single crystal growth apparatus, comprising: a crucible and a seed crystal rod; an annular guide tube is disposed around the seed crystal rod, the annular guide tube being connected to a plasma gas path assembly to receive plasma gas flow; the annular guide tube has an annular chamber inside, and a guide element is disposed within the annular chamber; wherein the guide element is annular and inclined, and is used to split the plasma gas flow received by the annular chamber at its highest point, and guide the two plasma gas flows to collide and mix at the lowest point of the guide element; the bottom surface of the annular chamber is inclined, and the inclination direction of the bottom surface of the chamber is opposite to the inclination direction of the guide element; wherein the annular guide tube has a plurality of exhaust holes uniformly opened circumferentially on the bottom surface of the chamber, the exhaust holes being inclined in a direction away from the axis, and the length of each exhaust hole decreasing sequentially from the highest point to the lowest point of the bottom surface of the chamber, so that the gas output of each exhaust hole is similar at the initial exhaust.

[0013] In one optional embodiment, an air inlet is provided on the upper surface of the annular guide tube; wherein the plasma gas path assembly is connected to the air inlet of the annular guide tube; and the highest point of the guide member is located directly below the air inlet.

[0014] In one alternative embodiment, the guide member has an air passage at its lowest point; wherein the highest point of the bottom surface of the chamber is located directly below the air passage.

[0015] In one optional embodiment, the lower opening of the exhaust port is inclined away from the axis; wherein the axis of the exhaust port is coplanar with the axis of the annular guide tube.

[0016] In one alternative embodiment, the exhaust port and the air passage are misaligned.

[0017] In one optional embodiment, the crucible is used to hold a co-solvent material, which includes: component A, component B, and component C; wherein component A is any one or more of the low-melting-point metals Ga, In, Sn, and Cu; component B is any one or more of the carbon-soluble metals Fe, Co, Ni, and Mn; and component C is any one or two of the sp³ hybrid framework agents Si and Ge.

[0018] Secondly, this disclosure also provides a method for operating a diamond single crystal growth apparatus, comprising: placing a fluxing agent in a crucible and providing a solid carbon source; driving a seed crystal rod to rotate and pull it via a seed crystal rod transmission mechanism to grow a diamond single crystal; delivering a plasma gas flow containing active hydrogen atoms and carbon-containing active groups into an annular guide tube via a plasma gas path assembly; splitting the plasma gas flow received by the annular guide tube via a guide member and guiding the two plasma gas flows to collide and mix; guiding the plasma gas flow to be sprayed away from the seed crystal rod via a plurality of inclined exhaust holes; and making the length of each exhaust hole decrease sequentially from the highest point to the lowest point along the inclined bottom surface of the chamber so that the gas output of each exhaust hole is similar at the initial exhaust.

[0019] In one optional embodiment, the method of diverting the plasma gas flow received by the annular guide tube through the guide member and guiding the two plasma gas flows to collide and mix includes: setting the annular guide member at an angle; setting the highest point of the guide member directly below the air inlet; and opening an air passage at the lowest point of the guide member.

[0020] In one optional embodiment, the method of guiding the plasma gas flow through a plurality of inclined exhaust holes toward a direction away from the seed crystal rod includes: uniformly opening a plurality of exhaust holes in the annular guide tube along the circumferential direction on the bottom surface of the chamber; and tilting the lower end of the exhaust holes toward a direction away from the axis.

[0021] In one optional embodiment, the method of making the air output of each exhaust hole similar by decreasing the length of each exhaust hole sequentially from the highest point to the lowest point of the inclined bottom surface of the chamber includes: setting the bottom surface of the annular chamber at an inclination; positioning the highest point of the bottom surface of the chamber directly below the air passage; and decreasing the length of each exhaust hole sequentially from the highest point to the lowest point of the bottom surface of the chamber.

[0022] The beneficial effects of this invention are as follows: The diamond single crystal growth apparatus and its operating method, by providing a flow guide within the annular chamber, splits the plasma gas flow received by the annular chamber at its highest point and guides the two plasma gas flows to collide and mix at the lowest point of the flow guide. This ensures uniform mixing of active hydrogen atoms and carbon-containing active groups, preventing polycrystalline formation and solvent encapsulation during subsequent diamond growth due to uneven distribution of carbon-containing active groups. Simultaneously, by tilting the bottom surface of the annular chamber and opening exhaust holes on the tilted surface, the exhaust holes near the inlet have longer channels, while those further away have shorter channels. This allows the plasma gas flow to travel for a longer time within the longer channels of the exhaust holes, resulting in similar exhaust volumes from each exhaust hole during the initial exhaust phase of the annular flow guide. This prevents uneven exhaust due to time differences, thus avoiding polycrystalline formation and solvent encapsulation.

[0023] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention are realized and obtained through the structures particularly pointed out in the description and the drawings.

[0024] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0025] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0026] Figure 1 This is a schematic diagram of a diamond single crystal growth apparatus provided in an embodiment of the present disclosure; Figure 2 This is a schematic diagram of the structure of an annular guide tube provided in an embodiment of the present disclosure; Figure 3 A top view of an annular guide tube provided in an embodiment of this disclosure; Figure 4 This is a cross-sectional view of an annular guide tube along the AA direction, provided in an embodiment of this disclosure.

[0027] In the picture: 1. Crucible; 2. Seed crystal rod; 3. Annular guide tube; 301. Lower shell; 302. Upper cover; 303. First limiting block; 304. Second limiting block; 31. Annular chamber; 311. Bottom surface of the chamber; 32. Guide component; 321. Air passage hole; 33. Exhaust hole; 331. Upper orifice; 332. Lower orifice; 34. Air inlet; 4. Plasma gas path assembly; 5. Seed crystal rod drive mechanism; 6. Crucible transmission mechanism. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0029] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the figures, the thickness of parts may be exaggerated or reduced for the purpose of effectively depicting the technical content.

[0030] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0031] like Figure 1 As shown, at least one embodiment provides a diamond single crystal growth apparatus, including: a crucible 1, a seed crystal rod 2, an annular guide tube 3, and a plasma gas path assembly 4. The annular guide tube 3 is arranged around the periphery of the seed crystal rod 2, and the plasma gas path assembly 4 is connected to the annular guide tube 3 through a gas conduit.

[0032] like Figures 2 to 4 As shown, in some embodiments, the annular guide tube 3 has an annular chamber 31 inside, and a guide member 32 is provided inside the annular chamber 31; wherein the guide member 32 is annular and inclined, and the guide member 32 is used to split the plasma gas flow received by the annular chamber 31 at its highest point, and guide the two plasma gas flows to collide and mix at the lowest point of the guide member 32.

[0033] Specifically, the plasma generator in plasma gas path assembly 4 ionizes the H2 and CH4 mixed gas supplied by the gas supply source to form a plasma gas flow containing active hydrogen atoms and carbon-containing active groups.

[0034] In related technologies, the plasma gas flow formed after the mixed gas is ionized may have uneven mixing of active hydrogen atoms and carbon-containing active groups.

[0035] Therefore, in this embodiment, by providing a flow guide 32 in the annular chamber 31, the flow guide 32 splits the plasma gas flow received by the annular chamber 31 at its highest point and guides the two plasma gas flows to collide and mix at the lowest point of the flow guide 32, so that the active hydrogen atoms and carbon-containing active groups are mixed evenly, thus avoiding the formation of polycrystalline and solvent encapsulation due to uneven distribution of carbon-containing active groups during the subsequent diamond growth process.

[0036] like Figure 4 As shown, in some embodiments, the bottom surface 311 of the annular chamber 31 is inclined, and the inclination direction of the bottom surface 311 is opposite to the inclination direction of the guide member 32; wherein the annular guide tube 3 has a plurality of exhaust holes 33 uniformly opened in the circumferential direction on the bottom surface 311 of the chamber, the exhaust holes 33 are inclined in the direction away from the axis, and the length of each exhaust hole 33 decreases sequentially from the highest point to the lowest point of the bottom surface 311 of the chamber, so that the amount of air discharged by each exhaust hole 33 is similar at the initial exhaust.

[0037] In related technologies, since the annular chamber 31 has only a single air inlet 34, when the annular chamber 31 initially receives plasma airflow, because the annular chamber 31 is not completely filled with plasma airflow, the exhaust port 33 near the air inlet 34 will receive plasma airflow earlier than the exhaust port 33 far from the air inlet 34. That is, when each exhaust port 33 initially exhausts, the air output of each exhaust port 33 is uneven due to the time difference.

[0038] Therefore, in this embodiment, by setting the bottom surface 311 of the annular chamber 31 at an angle and opening exhaust holes 33 on the angled surface, the exhaust holes 33 near the air inlet have longer channels, while the exhaust holes 33 far from the air inlet have shorter channels. This allows the plasma gas flow to pass through the exhaust holes 33 with longer channels for a longer time, so that the gas output of each exhaust hole 33 is similar during the initial exhaust of the annular guide tube 3, and the gas output of each exhaust hole 33 will not be uneven due to time difference, thereby avoiding the generation of polycrystalline and solvent encapsulation.

[0039] like Figure 2 , Figure 4 As shown, in some embodiments, the annular guide tube 3 includes: an annular lower shell 301 and an annular upper cover 302, with an annular chamber 31 formed on the lower shell 301.

[0040] Specifically, the inner wall of the annular chamber 31 is provided with a first limiting block 303 and a second limiting block 304, and the upper opening of the annular chamber 31 is provided with an installation step; after the guide member 32 is placed into the annular chamber 31, it abuts against the first limiting block 303 and the second limiting block 304 for limitation, and then is fixedly connected to the inner wall of the annular chamber 31 by welding or other means; subsequently, the upper cover 302 abuts against the installation step of the upper opening of the annular chamber 31 for limitation, and then is fixedly connected to the lower shell 301 by welding or other means.

[0041] like Figure 1 As shown, in some embodiments, the diamond single crystal growth apparatus further includes a seed crystal rod drive mechanism 5 and a crucible drive mechanism 6.

[0042] Specifically, the plasma gas path assembly 4 includes a gas supply source, a plasma generator, and a gas conduit; wherein, the gas supply source provides a mixture of H2 and CH4 gas, and the plasma generator ionizes the mixture gas to form a plasma gas flow containing active hydrogen atoms and carbon active groups, which is then transported to the annular guide tube 3 through the gas conduit.

[0043] Specifically, the seed crystal rod transmission mechanism 5 is located above the crucible and is used to connect the seed crystal rod 2 to drive the seed crystal rod 2 to perform lifting and rotating movements.

[0044] Specifically, the crucible transmission mechanism 6 has a crucible shaft inside, the upper end of which is connected to the crucible. The crucible transmission mechanism 6 drives the crucible to move up, down and rotate through the crucible shaft.

[0045] like Figure 4 As shown, in some embodiments, an air inlet 34 is provided on the upper surface of the annular guide tube 3; wherein the plasma gas path assembly 4 is connected to the air inlet 34 of the annular guide tube 3; the highest point of the guide member 32 is located directly below the air inlet 34.

[0046] Specifically, the air intake 34 is located on the upper cover 302.

[0047] In this embodiment, the highest point of the guide member 32 is located directly below the air inlet 34, which can better divert the plasma gas flow.

[0048] like Figure 4 As shown, in some embodiments, the guide member 32 has an air passage 321 at its lowest point; wherein the highest point of the bottom surface 311 of the chamber is located directly below the air passage 321.

[0049] Specifically, the guide member 32 has a left arc-shaped portion and a right arc-shaped portion, which are connected at the highest point and have a gap at the lowest point to form an air passage 321.

[0050] In this embodiment, the air passage 321 is located at the lowest point of the guide member 32, which can make the kinetic energy of the two plasma gas flows similar, so as to better mix them.

[0051] like Figure 4 As shown, in some embodiments, the lower opening 332 of the exhaust port 33 is inclined in a direction away from the axis; wherein the axis of the exhaust port 33 is coplanar with the axis of the annular guide tube 3.

[0052] Specifically, the upper opening 331 of the exhaust port 33 is close to the inner ring, and the lower opening 332 of the exhaust port 33 is close to the outer ring.

[0053] In this embodiment, the aforementioned tilting arrangement ensures that the plasma gas flow has the same difficulty in entering each exhaust port 33.

[0054] In some embodiments, the crucible 1 is used to hold a co-solvent material, which includes: component A, component B and component C; wherein component A is any one or more of the low-melting-point metals Ga, In, Sn and Cu; component B is any one or more of the carbon-soluble metals Fe, Co, Ni and Mn; and component C is any one or two of the sp³ hybrid framework agents Si and Ge.

[0055] In some embodiments, the exhaust port 33 and the vent port 321 are misaligned.

[0056] In this embodiment, the exhaust port 33 and the air passage port 321 are misaligned to prevent the airflow discharged from the air passage port 321 from being directly discharged through the exhaust port 33.

[0057] At least one embodiment also provides a method for operating a diamond single crystal growth apparatus, comprising: placing a fluxing agent in a crucible 1 and providing a solid carbon source; driving a seed crystal rod 2 to rotate and pull it via a seed crystal rod transmission mechanism 5 to grow a diamond single crystal; conveying a plasma gas flow containing active hydrogen atoms and carbon-containing active groups into an annular guide tube 3 via a plasma gas path assembly 4; splitting the plasma gas flow received by the annular guide tube 3 via a guide member 32 and guiding the two plasma gas flows to collide and mix; guiding the plasma gas flow to be sprayed away from the seed crystal rod 2 via a plurality of inclined exhaust holes 33; and making the length of each exhaust hole 33 decrease sequentially from the highest point to the lowest point along the inclined bottom surface 311 of the chamber so that the gas output of each exhaust hole 33 is similar at the initial exhaust.

[0058] For the specific structure and implementation process of the diamond single crystal growth device, please refer to the relevant discussion in the above embodiments, which will not be repeated here.

[0059] In this embodiment, by providing a flow guide 32 within the annular chamber 31, the flow guide 32 splits the plasma gas flow received by the annular chamber 31 at its highest point and guides the two plasma gas flows to collide and mix at the lowest point of the flow guide 32. This ensures that the active hydrogen atoms and carbon-containing active groups are mixed uniformly, preventing polycrystalline formation and solvent encapsulation caused by uneven distribution of carbon-containing active groups during subsequent diamond growth. Simultaneously, by tilting the bottom surface 311 of the annular chamber 31 and opening exhaust holes 33 on the tilted surface, the exhaust holes 33 near the air inlet have longer channels, while those far from the air inlet have shorter channels. This allows the plasma gas flow to pass through the longer channels of the exhaust holes 33 for a longer time, resulting in similar exhaust volumes from each exhaust hole 33 during the initial exhaust of the annular flow guide 3. This prevents uneven exhaust from each exhaust hole 33 due to time differences, thereby avoiding polycrystalline formation and solvent encapsulation.

[0060] In some embodiments, the method of diverting the plasma gas flow received by the annular guide tube 3 through the guide member 32 and guiding the two plasma gas flows to collide and mix includes: setting the annular guide member 32 at an angle; setting the highest point of the guide member 32 directly below the air inlet 34; and opening an air passage 321 at the lowest point of the guide member 32.

[0061] In some embodiments, the method of guiding plasma gas flow to be sprayed in a direction away from the seed crystal rod 2 through a plurality of inclined exhaust holes 33 includes: uniformly opening a plurality of exhaust holes 33 in the circumferential direction on the bottom surface 311 of the annular guide tube 3; and tilting the lower end of the exhaust holes 33 in a direction away from the axis.

[0062] In some embodiments, the method of making the air output of each exhaust hole 33 approximately similar by decreasing the length of each exhaust hole 33 sequentially from the highest point to the lowest point of the inclined chamber bottom surface 311 includes: setting the chamber bottom surface 311 of the annular chamber 31 at an inclination; positioning the highest point of the chamber bottom surface 311 directly below the air passage 321; and decreasing the length of each exhaust hole 33 sequentially from the highest point to the lowest point of the chamber bottom surface 311.

[0063] In summary, this diamond single crystal growth apparatus and its operating method, by setting a guide member 32 in the annular chamber 31, allows the guide member 32 to split the plasma gas flow received by the annular chamber 31 at its highest point and guide the two plasma gas flows to collide and mix at the lowest point of the guide member 32. This ensures that the active hydrogen atoms and carbon-containing active groups are mixed evenly, avoiding the formation of polycrystalline structures and solvent encapsulation in the subsequent diamond growth process due to uneven distribution of carbon-containing active groups. At the same time, by tilting the bottom surface 311 of the annular chamber 31 and opening exhaust holes 33 on the tilted surface, the exhaust holes 33 near the air inlet have longer channels, while the exhaust holes 33 far from the air inlet have shorter channels. This allows the plasma gas flow to pass through the longer channels of the exhaust holes 33 for a longer time, thus making the gas output of each exhaust hole 33 similar during the initial exhaust of the annular guide tube 3. This prevents uneven gas output from each exhaust hole 33 due to time differences, thereby avoiding the formation of polycrystalline structures and solvent encapsulation.

[0064] In this document, when it is said that the first component is located on the second component, this can mean that the first component can be directly formed on the second component, or that the third component can be inserted between the first component and the second component.

[0065] In this document, when an element or layer is referred to as being “located,” “joined to,” “connected to,” “attached to,” or “coupled to” another element or layer, it may be directly located, joined, connected, attached to, or coupled to the other element or layer, or there may be an intermediate element or layer.

[0066] In the description of the embodiments of the present invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention based on the specific circumstances.

[0067] Spatially relative terms, such as “inside,” “outside,” “below,” “below,” “down,” “above,” “up,” etc., may be used herein to describe the relationship between one element or feature illustrated in the figures and another element or feature. In addition to the orientations depicted in the figures, spatially relative terms may be intended to cover different orientations of the apparatus in use or operation.

[0068] Based on the above-described preferred embodiments of the present invention, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the inventive concept. The technical scope of this invention is not limited to the contents of the specification, but must be determined according to the scope of the claims.

Claims

1. A diamond single crystal growth apparatus, comprising: The crucible (1) and seed crystal rod (2) are characterized in that, The seed crystal rod (2) is surrounded by an annular guide tube (3), which is connected to the plasma gas path assembly (4) to receive the plasma gas flow. The plasma gas path assembly (4) delivers a plasma gas flow containing active hydrogen atoms and carbon-containing active groups into the annular guide tube (3); The annular guide tube (3) has an annular chamber (31) inside, and a guide element (32) is provided inside the annular chamber (31); wherein The flow guide (32) is annular and inclined. The flow guide (32) is used to split the plasma gas flow received by the annular chamber (31) at its highest point and guide the two plasma gas flows to collide and mix at the lowest point of the flow guide (32). The bottom surface (311) of the annular chamber (31) is inclined, and the inclination direction of the bottom surface (311) is opposite to the inclination direction of the guide (32); wherein The annular guide tube (3) has a plurality of exhaust holes (33) evenly opened in the circumferential direction on the bottom surface (311) of the chamber. The exhaust holes (33) are inclined in the direction away from the axis, and the length of each exhaust hole (33) decreases sequentially from the highest point to the lowest point of the bottom surface (311) of the chamber, so that the amount of air discharged from each exhaust hole (33) is similar at the initial exhaust. An air inlet (34) is provided on the upper surface of the annular guide tube (3); wherein The plasma gas path assembly (4) is connected to the air inlet (34) of the annular guide tube (3); The highest point of the guide (32) is located directly below the air inlet (34); The guide member (32) has an air vent (321) at its lowest point; wherein The highest point of the bottom surface (311) of the chamber is located directly below the air vent (321).

2. The diamond single crystal growth apparatus as described in claim 1, characterized in that, The lower opening (332) of the exhaust port (33) is inclined away from the axis; wherein The centerline of the exhaust port (33) is coplanar with the centerline of the annular guide tube (3).

3. The diamond single crystal growth apparatus as described in claim 2, characterized in that, The exhaust port (33) and the air passage port (321) are misaligned.

4. The diamond single crystal growth apparatus as described in claim 1, characterized in that, The crucible (1) is used to hold the co-solvent raw materials, which include: component A, component B, and component C; wherein Component A is any one or more of the low-melting-point metals Ga, In, Sn, and Cu; Component B is any one or more of the carbon-soluble metals Fe, Co, Ni, and Mn; Component C is any one or both of the sp³ hybrid framework agents Si and Ge.

5. A method for operating the diamond single crystal growth apparatus as described in any one of claims 1-4, characterized in that, include: The cosolvent raw material is placed in a crucible (1) and a solid carbon source is provided; The seed crystal rod (2) is driven by the seed crystal rod transmission mechanism (5) to rotate and pull so that diamond single crystals can grow. Plasma gas containing active hydrogen atoms and carbon-containing active groups is delivered into the annular guide tube (3) through the plasma gas path assembly (4); The plasma gas flow received by the annular guide tube (3) is split by the guide tube (32) and guided to the two plasma gas flows to mix against each other; The plasma gas flow is guided to be ejected away from the seed crystal rod (2) through several inclined exhaust holes (33); By making the length of each exhaust hole (33) decrease sequentially from the highest point to the lowest point along the inclined bottom surface (311) of the chamber, the amount of air discharged from each exhaust hole (33) at the initial exhaust is similar.

6. The operating method of the diamond single crystal growth apparatus as described in claim 5, characterized in that, The method of guiding the plasma gas flow through a plurality of inclined exhaust holes (33) to be sprayed in a direction away from the seed crystal rod (2) includes: Several exhaust holes (33) are evenly provided in the circumferential direction on the bottom surface (311) of the annular guide tube (3). The lower end of the vent (33) is tilted away from the axis.

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