Electronic device thermal switch device and electronic device

Abstract

The application discloses an electronic device thermal switch device and an electronic device. The electronic device thermal switch device comprises a framework, a capsule column and a coaming. The framework is arranged on a chip of the electronic device. The framework has at least one mounting hole. The capsule column is matched with the shape of the mounting hole and arranged in the mounting hole. The capsule column contains a phase change material. The capsule column has an expansion state after phase change under heat. The capsule column is configured to contact a heat sink of the electronic device when in the expansion state. The coaming is arranged around the periphery of the framework. The coaming is configured to circumferentially limit the framework. The electronic device thermal switch device and the electronic device disclosed by the application can realize the on-off of the thermal path by directly sensing the temperature change of the chip to realize the physical displacement, thereby solving the problem of poor heat dissipation efficiency of the heat dissipation device in the related art.

Description

Technical Field

[0001] This application relates to the field of electronic equipment technology, and in particular to a thermal switch device for electronic equipment and an electronic device. Background Technology

[0002] With the rapid development of AI computing modules and edge servers towards higher power density, the sharing of a single large heatsink module by multiple chips (including CPUs, GPUs, ASICs, etc.) and direct contact between the heatsink and the chip has become the mainstream packaging and heat dissipation trend. However, this architecture faces severe thermal management bottlenecks in practical applications. First, the in-plane heat dissipation temperature uniformity is poor. Due to significant differences in the design power consumption and real-time load of each chip, sharing a heatsink can easily lead to heat concentration at a single point, which can cause thermal deformation or even warping of the PCB board, resulting in unstable heat dissipation performance.

[0003] Secondly, in multi-chip co-heating scenarios, when low-power chips and high-power chips share a heat sink, the low-temperature chip can easily absorb heat from the high-temperature chip through the heat sink, causing its own temperature to rise abnormally, even exceeding the allowable operating temperature. This results in temperature backflow and thermal crosstalk, leading to poor heat dissipation efficiency and affecting system stability and reliability. Summary of the Invention

[0004] This application provides a thermal switch device and an electronic device to at least solve the problem of poor heat dissipation efficiency in heat dissipation devices in the related art.

[0005] This application provides a thermal switch device for an electronic device, comprising: a frame disposed on a chip of the electronic device, the frame having at least one mounting hole; a capsule column adapted to the shape of the mounting hole and disposed thereon, the capsule column containing a phase change material, the capsule column having an expansion state that undergoes a phase change upon heating, and the capsule column being configured to contact a heat sink of the electronic device when in the expansion state; and a surrounding plate disposed around the outer periphery of the frame, the surrounding plate being configured to circumferentially limit the frame.

[0006] This application also provides an electronic device, including the above-mentioned electronic device thermal switch device; a circuit board and a chip disposed on the circuit board, the frame of the electronic device thermal switch device being disposed on the side of the chip away from the circuit board; a heat sink being disposed on the side of the chip away from the circuit board, the electronic device thermal switch device being located between the heat sink and the chip; wherein, the capsule column of the electronic device thermal switch device has a first state and an expanded second state, the second state being the expanded state, when the capsule column is in the first state, there is a gap between the capsule column and the heat sink, and when the capsule column is in the second state, the capsule column is in contact with the heat sink.

[0007] This application discloses an electronic device thermal switch device employing a frame and capsule pillar structure. The frame mounts and limits the capsule pillar, ensuring structural compactness and integration, and also provides thermal conductivity through contact with the chip. The capsule pillar utilizes a phase change material. Under low-temperature conditions, the capsule pillar is spaced apart from the heat sink, preventing the low-temperature chip from being affected by the heat sink temperature. This prevents heat from high-power chips from flowing back to low-power chips, resolving temperature crosstalk issues and ensuring the stability and reliability of the low-temperature chip. Under high-temperature conditions, the capsule pillar expands from a solid to a liquid state, deforming axially along the mounting hole and contacting the heat sink. This allows the chip to contact the heat sink via the electronic device thermal switch device, achieving rapid heat dissipation and improving chip heat dissipation efficiency. The structure of this electronic device thermal switch device does not require external power; it directly senses chip temperature changes to achieve physical displacement and thus open / close the thermal path. This prevents temperature backflow when multiple chips are dissipating heat simultaneously. Furthermore, the phase change material absorbs latent heat, preventing thermal shock to the chip. Attached Figure Description

[0008] To more clearly illustrate the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0009] Figure 1 This is a three-dimensional structural schematic diagram of the thermal switch device for electronic devices provided in the embodiments of this application;

[0010] Figure 2 An exploded view of an electronic device thermal switch provided in an embodiment of this application;

[0011] Figure 3 A cross-sectional view of an electronic device thermal switch provided in an embodiment of this application;

[0012] Figure 4 Distribution diagram of capsule columns of multiple different phase change materials provided in the embodiments of this application;

[0013] Figure 5 An exploded view of the electronic device provided in the embodiments of this application.

[0014] The above figures include the following reference numerals:

[0015] 10. Thermal switch device for electronic equipment; 110. Frame; 111. Mounting hole; 120. Capsule column; 121. First capsule column; 122. Second capsule column; 123. Third capsule column; 124. Fourth capsule column; 130. Enclosure; 140. Support column; 150. Temperature equalization layer; 20. Circuit board; 30. Chip; 40. Heat sink. Detailed Implementation

[0016] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of this application.

[0017] It should be noted that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. The terms "installed," "connected," and "linked" should be interpreted broadly, for example, they can be fixed connections, detachable connections, or integral connections; they can be mechanical connections or electrical connections; they can be direct connections or indirect connections through an intermediate medium; they can be internal connections between two elements. The terms "parallel," "perpendicular," and "equal" include the described situation and situations similar to the described situation, the range of which is within an acceptable deviation range, wherein the acceptable deviation range is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, where an acceptable deviation range for approximate parallelism can be, for example, within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, where an acceptable deviation range for approximate perpendicularity can also be, for example, within 5°. "Equal" includes absolute equality and approximate equality, where an acceptable deviation range for approximate equality can be, for example, a difference between the two equal items being less than or equal to 5% of either one. Those skilled in the art will understand the specific meaning of the above terms in this application based on the specific circumstances.

[0018] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0019] To address the problem of poor heat dissipation efficiency in related technologies, this embodiment provides a thermal switch device for electronic devices.

[0020] like Figure 1 and Figure 2 As shown, the thermal switch device 10 for electronic devices includes a frame 110, a capsule column 120, and a surrounding plate 130. The frame 110 is disposed on the side of the chip 30 of the electronic device and has at least one mounting hole 111. The capsule column 120 is adapted to the shape of the mounting hole 111 and is disposed in the mounting hole 111. The capsule column 120 contains a phase change material and has an expansion state that undergoes a phase change when heated. When the capsule column 120 is in the expansion state, it is configured to contact the heat sink 40 of the electronic device. The surrounding plate 130 surrounds the outer periphery of the frame 110 and is configured to circumferentially limit the frame 110.

[0021] The skeleton 110 serves as the overall support frame, providing mounting and limiting for the capsule column 120. The skeleton 110 is located on the side of the chip 30 of the electronic device, specifically on the side of the chip 30 away from the circuit board 20, and between the chip 30 and the heat sink 40.

[0022] Specifically, the end face of the skeleton 110 opposite to the chip 30 is provided with a mounting hole 111. The mounting hole 111 is provided along the height direction of the skeleton 110. The mounting hole 111 is used to accommodate the capsule column 120. The outer wall surface of the capsule column 120 and the inner wall surface of the mounting hole 111 are formed into a structure that matches the shape and size, so that the capsule column 120 is tightly disposed in the mounting hole 111, so that when the capsule column 120 is in an expanded state, it extends along the axial direction of the mounting hole 111.

[0023] In this embodiment, the capsule column 120 contains a phase change material that undergoes a solid-liquid phase transition at a specific temperature, accompanied by volume expansion or contraction. The capsule column 120 is configured to expand upon heating and then contact the heat sink 40 of the electronic device. When the temperature of the chip 30 rises to the phase transition temperature of the phase change material, the phase change material inside the capsule column 120 melts and expands, pushing the capsule column 120 to elongate axially until it rises and makes close contact with the heat sink 40 above, establishing a low thermal resistance thermal conductivity path. When the temperature of the chip 30 decreases, the phase change material solidifies and contracts, the volume of the capsule column 120 decreases, and a micron-level gap is formed between the capsule column 120 and the heat sink 40, utilizing the low thermal conductivity of air to achieve thermal isolation.

[0024] Specifically, the phase change material can be at least one of octadecane, hexadecane, paraffin, etc. The phase change material has a suitable phase change temperature range, a high latent heat of phase change, good chemical stability and low cost.

[0025] In this embodiment, to ensure the thermal conductivity of the capsule column 120 so as to transfer the heat of the chip 30 to the heat sink 40, the capsule column 120 also includes a thermally conductive filler. The thermally conductive filler is at least one of graphene, boron nitride, alumina, aluminum nitride, carbon nanotubes, etc. The use of the thermally conductive filler accelerates the transfer of heat from the chip 30 to the phase change material and the discharge from the phase change material to the heat sink 40, thereby improving the response speed and heat dissipation efficiency.

[0026] In this embodiment, the electronic device thermal switch 10 adopts a structure with a frame 110 and a capsule column 120. The frame 110 is used to install and limit the capsule column 120, ensuring the compactness and integration of the structure. The frame 110 also has the function of contacting and conducting heat with the chip 30. The capsule column 120 is made of a phase change material. Under the low temperature condition of the chip 30, the capsule column 120 is spaced apart from the heat sink 40, thereby avoiding the low temperature chip 30 from being affected by the temperature of the heat sink 40. This prevents the heat from the high power chip 30 from flowing back to the low power chip 30, solves the temperature crosstalk problem, and ensures the stability and reliability of the low temperature chip 30. Under the high temperature condition of the chip 30, the capsule column 120 expands from a solid state to a liquid state. The capsule column 120 deforms axially along the mounting hole 111 and contacts the heat sink 40, so that the chip 30 can contact the heat sink 40 through the electronic device thermal switch 10, achieving a rapid heat dissipation effect and improving the heat dissipation efficiency of the chip 30. The structure of the electronic device thermal switch 10 of this application does not require external power. It can directly realize the opening and closing of the thermal path by sensing the temperature change of the chip 30 to achieve physical displacement. It can prevent the phenomenon of temperature backflow when multiple chips 30 dissipate heat at the same time. In addition, it can use phase change materials to absorb latent heat to prevent thermal shock of the chip 30.

[0027] The structure of the skeleton 110, capsule column 120 and surrounding plate 130 used in this embodiment has a small overall size and is easy to integrate, making it suitable for use in the heat dissipation interface of high heat flux density chip 30 in servers and related equipment.

[0028] like Figure 1 and Figure 2 As shown, the enclosure 130 is formed as a frame structure and is set on the outer periphery of the skeleton 110. The enclosure 130 restricts the free expansion and displacement of the skeleton 110 and the capsule column 120 in the plane formed along the length and width directions of the skeleton 110, ensuring that the volume increment generated by the thermal expansion of the capsule column 120 is mainly converted into axial displacement along the height direction of the skeleton 110, thereby improving the efficiency and directionality of thermal response and avoiding energy waste in lateral deformation.

[0029] In this embodiment, the shape of the skeleton 110 is adapted to the shape of the surrounding plate 130. For example, if the skeleton 110 is a cubic structure, the corresponding surrounding plate 130 has four plate segments connected end to end in sequence; if the skeleton 110 is a cylindrical structure, the corresponding surrounding plate 130 is a ring structure fitted around the outer periphery of the skeleton 110.

[0030] like Figure 2 and Figure 3 As shown, the number and shape of the capsule columns 120 are adapted to the mounting holes 111. The one-to-one correspondence between the capsule columns 120 and the mounting holes 111 ensures the stability of the capsule column installation and avoids structural interference between the capsule columns 120.

[0031] Specifically, the capsule column 120 can be cylindrical, with a circular top end face and a cylindrical mounting hole 111; or it can be prismatic, with a polygonal top end face and a prismatic mounting hole 111; or it can be an irregularly shaped column, with an irregularly shaped top end face and an irregularly shaped mounting hole 111.

[0032] In this embodiment, both the capsule column 120 and the mounting holes 111 are provided in multiples. The multiple mounting holes 111 can be spaced apart along the length direction of the skeleton 110; the multiple mounting holes 111 can be spaced apart along the width direction of the skeleton 110; or the multiple mounting holes 111 can be spaced apart along both the length and width directions of the skeleton 110.

[0033] In this embodiment, the phase change materials of the multiple capsule columns 120 are set with different phase change temperatures. When the heating temperature of the phase change material reaches the corresponding phase change temperature, the phase change material undergoes thermal expansion, and the capsule column 120 deforms.

[0034] Specifically, the phase transition temperature of the phase transition material in the capsule column 120 located in the central region of the framework 110 is greater than the phase transition temperature of the phase transition material in the capsule column 120 located in the outer peripheral region of the central region. The capsule column 120 located in the central region corresponds to the central region of the chip 30, and the capsule column 120 located in the outer peripheral region of the central region corresponds to the edge region of the chip 30.

[0035] Because heat conduction within the chip 30 is subject to diffusion thermal resistance, the temperature distribution within the chip 30 exhibits a gradient characteristic: high temperature at the center and decreasing temperature towards the outer edges. This application addresses this by incorporating multiple capsule pillars 120 made of phase change materials with different phase transition temperatures. This allows the device to adapt to different temperature regions of the chip 30, enabling the thermal switch 10 to provide a point-to-point adaptive response based on the actual temperature distribution on the chip 30 surface. This structural design allows capsule pillars 120 in different regions to operate at their respective optimal temperature thresholds, avoiding thermal shock caused by simultaneous switching on and off of the entire chip. For example, capsule pillars 120 located in the high-temperature region corresponding to the center of the chip 30 can preferentially conduct at lower temperatures, rapidly dissipating peak heat; while capsule pillars 120 located in the low-temperature region at the edge of the chip 30 remain off or delay conduction, maintaining local thermal isolation. The multi-capsule pillars 120 used in this application form different phase transition temperatures to adapt to the structure of different thermal regions of the same chip 30. This not only optimizes the in-plane temperature uniformity and reduces the risk of chip 30 warping due to local overheating, but also smooths the heat flux transfer process through gradient thermal response characteristics, further suppressing temperature backflow. Simultaneously, the multi-capsule pillar structure also increases the effective heat conduction area, improving overall heat dissipation efficiency.

[0036] In this embodiment, for example Figure 4 In the specific embodiment shown, the skeleton 110 has a cubic structure, and the multiple capsule columns 120 have at least a first capsule column 121, a second capsule column 122, a third capsule column 123 and a fourth capsule column 124, and the phase change temperature of the phase change material of the first capsule column 121, the second capsule column 122, the third capsule column 123 and the fourth capsule column 124 decreases sequentially.

[0037] The phase transition temperature of the first capsule column 121 is 60℃, the phase transition temperature of the second capsule column 122 is 55℃, the phase transition temperature of the third capsule column 123 is 50℃, and the phase transition temperature of the fourth capsule column 124 is 45℃.

[0038] Specifically, multiple first capsule columns 121, second capsule columns 122, third capsule columns 123, and fourth capsule columns 124 are provided. In the illustration, capsule columns 120 of the same color are capsule columns 120 with the same phase transition temperature. Multiple fourth capsule columns 124 are arranged at intervals along the circumference of the skeleton 110 to form a rectangular arrangement. The third capsule column 123 is located inside the area enclosed by multiple fourth capsule columns 124. Multiple third capsule columns 123 are arranged at intervals along the circumference of the skeleton 110 to form a rectangular arrangement. The second capsule column 122 is located inside the area enclosed by multiple third capsule columns 123. Multiple second capsule columns 122 are arranged at intervals along the circumference of the skeleton 110 to form a rectangular arrangement. The first capsule column 121 is located inside the area enclosed by multiple second capsule columns 122.

[0039] In this embodiment, the first capsule column 121, the second capsule column 122, the third capsule column 123 and the fourth capsule column 124 cooperate to form a four-level temperature response ladder from the center to the edge, and cooperate with each other to form a nested structural arrangement, which is beneficial to ensure uniform temperature transfer.

[0040] In this embodiment, the capsule column 120 includes a coating membrane and an inner core. The coating membrane is configured to provide elastic deformation, and the inner core is disposed inside the coating membrane. The inner core contains a phase change material, and the inner core and the coating membrane are configured to seal together.

[0041] The coating is made of an elastic material with high thermal conductivity to enable the phase change material to adapt to elastic deformation when it expands and contracts.

[0042] In this embodiment, the inner core is located on the inner wall of the sealed space formed by the coating membrane, avoiding leakage. Specifically, when the phase change material melts and expands due to heat, the coating membrane can withstand the internal pressure and undergo elastic elongation, converting the volume expansion of the phase change material into axial displacement. This simultaneously prevents leakage of the liquid phase change material and contamination of the chip 30 or the heat sink 40, ensuring the long-term reliability of the device. The elastic properties of the coating membrane allow the capsule column 120 to return to its original shape when the phase change material solidifies and shrinks, ensuring the thermal switch's ability to repeatedly operate during thermal cycles.

[0043] In this embodiment, the skeleton 110 can undergo elastic deformation and has a heat conduction function. The enclosure 130 of this application is disposed on the outer periphery of the skeleton 110, thereby restricting the skeleton 110 from deforming along the length and width directions. Thus, when the skeleton 110 deforms, the enclosure 130 restricts the skeleton 110 to deform only along the height direction.

[0044] The skeleton 110 can be a polymer skeleton, and the material of the skeleton 110 includes polyimide.

[0045] The skeleton 110 can also be a flexible skeleton, and the material of the skeleton 110 includes silicone rubber.

[0046] Specifically, when the capsule column 120 expands, it will compress the skeleton 110, which will cause the skeleton 110 to undergo slight deformation and extend along the height direction.

[0047] like Figure 3 As shown, a support column 140 is provided inside the frame 110. The support column 140 is located on the outer periphery of the mounting hole 111 and is configured to conduct heat and increase strength.

[0048] Specifically, in this embodiment, by setting the support column 140, not only can the structural strength of the skeleton 110 be increased, but the skeleton 110 can also have a heat conduction function. The support column 140 in the skeleton 110 can quickly transfer heat to the capsule column 120. Of course, the matrix of the skeleton 110 also has a heat conduction function. The setting of the support column 140 realizes the improvement of heat conduction efficiency.

[0049] In this embodiment, the support column 140 is a graphite fiber column, which provides both thermal conductivity and elasticity. Specifically, the graphite fiber column extends along the height direction of the skeleton 110 in a spiral shape, and is configured for axial tension. The spiral graphite fiber column is structurally similar to a spring, ensuring heat transfer in length, width, and height directions before the capsule column 120 expands. As the capsule column 120 expands due to heat and undergoes axial deformation, the skeleton 110 deforms accordingly, and the graphite fiber column straightens. This ensures smooth heat conduction along the height direction of the skeleton 110 through the thermal switching device 10 between the chip 30 and the heat sink 40, reducing thermal resistance. Simultaneously, the spiral graphite fiber column structure prevents breakage when stretched, improving the lifespan of the skeleton 110.

[0050] like Figure 3 As shown, the skeleton 110 has a heat spreader 150 on the side facing the chip 30. The heat spreader 150 contacts the chip 30 and is inserted into the capsule column 120. The support column 140 abuts against the heat spreader 150.

[0051] The heat spreader 150 can quickly spread the heat of the chip 30 in the area near the chip 30, which can eliminate local hot spots, enhance the heat spreader effect, and prevent local overheating.

[0052] Specifically, the temperature distribution layer 150 is made of densely arranged graphite fibers or high thermal conductivity materials, which is conducive to the rapid diffusion of local hot spots on the surface of the chip 30, reducing the in-plane thermal resistance, and making the temperature distribution on the surface of the chip 30 more uniform.

[0053] In this embodiment, the heat spreader 150 is in direct contact with the chip 30, ensuring that heat is captured and dispersed immediately. The insertion and connection between the heat spreader 150 and the capsule pillars 120, and the structure of the support pillars 140 abutting against the heat spreader 150, construct a continuous and efficient heat conduction path from the chip 30 to the heat spreader 150 and then to the capsule pillars 120. This heat conduction structure not only improves the overall heat conduction efficiency but also further reduces contact stress through the buffering effect of the heat spreader 150. At the same time, the presence of the heat spreader 150 allows heat to be distributed more evenly to each capsule pillar 120, making the phase change action of the capsule pillars 120 more synchronous and controllable, and improving the accuracy of the response of the capsule pillars 120.

[0054] This application also provides an electronic device, such as Figure 5 As shown, the electronic device includes the aforementioned electronic device thermal switch 10, circuit board 20, and heat sink 40.

[0055] The chip 30 is disposed on the circuit board 20, the frame 110 of the electronic device thermal switch device 10 is disposed on the side of the chip 30 away from the circuit board 20, the heat sink 40 is disposed on the side of the chip 30 away from the circuit board 20, and the electronic device thermal switch device 10 is located between the heat sink 40 and the chip 30.

[0056] In this embodiment, the capsule column 120 of the electronic device thermal switch device 10 has a first state and an expanded second state. When the capsule column 120 is in the first state, there is a gap between the capsule column 120 and the heat sink 40. When the capsule column 120 is in the second state, the capsule column 120 is in contact with the heat sink 40.

[0057] Specifically, when the capsule pillar 120 is in the second state, it rises and contacts the heat sink 40, forming a low thermal resistance path. When the capsule pillar 120 is in the first state, it solidifies and contracts, forming a gap between it and the heat sink 40, utilizing the extremely low thermal conductivity of air (~0.026 W / mK) to achieve thermal isolation. In the first state at low temperature, a reserved gap δ needs to be designed between the heat sink 40 and the capsule pillar 120, using air for thermal insulation to ensure that the heat sink 40 prioritizes heat dissipation for the chip 30 under other high power consumption conditions. In the second state at high temperature, the capsule pillar 120 expands, precisely filling this gap, allowing the heat sink 40 to make close contact with the chip 30.

[0058] In this embodiment, the radiator 40 has a base plate and heat dissipation fins. The capsule column 120 can dissipate heat by contacting the base plate, and the capsule column 120 can also dissipate heat by contacting the heat dissipation fins.

[0059] In this embodiment, when the capsule column 120 is in the first state, the volume V0 of the capsule column 120 is: V0 = A × h0, where A is the cross-sectional area of ​​the capsule column 120 in the first state and h0 is the height of the capsule column 120 in the first state.

[0060] In this embodiment, when the capsule column 120 is in the second state, the volume V1 of the capsule column 120 is: V1=V0×(1+β), where β is the volume expansion rate of the capsule column 120. The volume expansion rate of the phase change material is a fixed value, and different phase change materials have different expansion rates. For example, the β of paraffin is about 10%-15%, that is, the volume increases by 10%-15%.

[0061] In this embodiment, the gap is δ, and the axial elongation of the capsule column 120 when it switches from the first state to the second state is Δh, where δ = Δh. In this application, δ = Δh = h0 × β × C × B, where C is the constraint coefficient, C < 1; and B is the compression correction coefficient, B > 1.

[0062] Specifically, in the actual structure, the expansion of the phase change material in the capsule column 120 is constrained by the wall of the skeleton 110 and the coating film, and therefore cannot expand freely. Thus, a constraint coefficient C is introduced for correction. At the same time, in order to ensure that the capsule column 120 and the surface of the heat sink 40 can make sufficient contact in the conductive state, the capsule column 120 can be compressed to a certain extent. Therefore, a compression correction coefficient B is introduced.

[0063] In this embodiment, C < 1, indicating that the skeleton 110 restricts the expansion of the phase change material, and only a portion of the expansion force is converted into axial displacement. Specifically, for rigid polymer skeletons, such as the polyimide skeleton 110, 0.2 ≤ C ≤ 0.5, and the specific value of C can be 0.2, 0.3, 0.4, 0.5, etc.; for flexible skeletons, such as softer materials like silicone rubber, 0.8 ≤ C ≤ 0.9, and the specific value of C can be 0.8, 0.82, 0.84, 0.86, 0.88, 0.9, etc. B is greater than 1, typically taking the value 1.2 ≤ B ≤ 1.3, and the specific value of C can be 1.2, 1.22, 1.24, 1.26, 1.28, 1.3, etc., resulting in a 20%-30% compression ratio for the capsule column 120 in the conductive state.

[0064] It should be noted that "multiple" in the above embodiments refers to at least two.

[0065] As can be seen from the above description, the embodiments of this application achieve the following technical effects:

[0066] The electronic device thermal switch 10 adopts a structure with a frame 110 and a capsule column 120. The frame 110 is used to install and limit the capsule column 120, ensuring the compactness and integration of the structure. The frame 110 also has the function of conducting heat in contact with the chip 30. The capsule column 120 is made of a phase change material. Under the low temperature condition of the chip 30, the capsule column 120 is spaced apart from the heat sink 40, thereby avoiding the influence of the heat sink 40 temperature on the low temperature chip 30. This prevents the heat from the high power chip 30 from flowing back to the low power chip 30, solves the temperature crosstalk problem, and ensures the stability and reliability of the low temperature chip 30. Under the high temperature condition of the chip 30, the capsule column 120 expands from a solid to a liquid state. The capsule column 120 deforms axially along the mounting hole 111 and contacts the heat sink 40, so that the chip 30 can contact the heat sink 40 through the electronic device thermal switch 10, achieving a rapid heat dissipation effect and improving the heat dissipation efficiency of the chip 30. The structure of the electronic device thermal switch 10 of this application does not require external power. It can directly realize the opening and closing of the thermal path by sensing the temperature change of the chip 30 to achieve physical displacement. It can prevent the phenomenon of temperature backflow when multiple chips 30 dissipate heat at the same time. In addition, it can use phase change materials to absorb latent heat to prevent thermal shock of the chip 30.

[0067] The foregoing has provided a detailed description of an electronic device thermal switch and an electronic device provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are merely for the purpose of helping to understand the method and core ideas of this application. It should be noted that those skilled in the art can make various improvements and modifications to this application without departing from its principles, and these improvements and modifications also fall within the protection scope of the claims of this application.

Claims

1. A thermal switch device for electronic equipment, characterized in that, include: A frame (110) is disposed on a chip (30) of an electronic device. The frame (110) has at least one mounting hole (111). The frame (110) is elastically deformable. A spiral support column (140) is disposed inside the frame (110). The support column (140) is located on the outer periphery of the mounting hole (111). The support column (140) is configured for heat conduction and increasing strength. Capsule column (120), the capsule column (120) is adapted to the shape of the mounting hole (111) and disposed in the mounting hole (111), the capsule column (120) contains a phase change material, the capsule column (120) has an expansion state that undergoes a phase change after being heated, and the capsule column (120) is configured to contact the heat sink (40) of the electronic device when it is in the expansion state; A surrounding panel (130) is disposed around the outer periphery of the frame (110), the surrounding panel (130) being configured to circumferentially limit the frame (110).

2. The thermal switch device for electronic devices according to claim 1, characterized in that, Multiple capsule columns (120) and mounting holes (111) are provided, and each capsule column (120) is provided in a one-to-one correspondence with the mounting hole (111); The phase change materials of the multiple capsule columns (120) are set with different phase change temperatures.

3. The thermal switch device for electronic devices according to claim 2, characterized in that, The plurality of mounting holes (111) are spaced apart along the length and / or width direction of the skeleton (110); The phase transition temperature of the phase change material of the capsule column (120) located in the central region of the skeleton (110) of the plurality of capsule columns (120) is greater than the phase transition temperature of the phase change material of the capsule column (120) located in the outer peripheral region of the central region of the plurality of capsule columns (120).

4. The thermal switch device for electronic devices according to claim 3, characterized in that, The skeleton (110) has a cubic structure, and the plurality of capsule columns (120) have at least a first capsule column (121), a second capsule column (122), a third capsule column (123) and a fourth capsule column (124), wherein the phase change temperature of the phase change material of the first capsule column (121), the second capsule column (122), the third capsule column (123) and the fourth capsule column (124) decreases sequentially; The fourth capsule column (124) is provided in multiples and is spaced apart circumferentially along the skeleton (110), and the third capsule column (123) is located inside the area enclosed by the multiple fourth capsule columns (124); The third capsule column (123) is provided in multiples and is spaced apart circumferentially along the skeleton (110), and the second capsule column (122) is located inside the area enclosed by the multiple third capsule columns (123); The second capsule column (122) is provided in multiples and is spaced apart circumferentially along the skeleton (110), and the first capsule column (121) is located inside the area enclosed by the multiple second capsule columns (122).

5. The thermal switch device for electronic devices according to claim 1, characterized in that, The capsule column (120) is cylindrical or prismatic.

6. The thermal switch device for electronic devices according to claim 1, characterized in that, The phase change material is at least one of octadecane, hexadecane, and paraffin; and / or The capsule column (120) further comprises a thermally conductive filler, which is at least one of graphene, boron nitride, alumina, aluminum nitride, and carbon nanotubes.

7. The thermal switch device for electronic devices according to claim 1, characterized in that, The capsule column (120) comprises: A coating film configured to provide elastic deformation; An inner core is disposed inside the coating membrane, the inner core contains the phase change material, and the inner core and the coating membrane are configured to fit together in a sealed manner.

8. The thermal switch device for electronic devices according to any one of claims 1 to 7, characterized in that, The skeleton (110) is a cubic structure, and the surrounding panel (130) includes four plate segments connected end to end in sequence, with the four plate segments respectively disposed on the outer peripheral surface of the skeleton (110); or The skeleton (110) is a cylindrical structure, and the surrounding plate (130) is a ring structure fitted around the outer periphery of the skeleton (110).

9. The thermal switch device for electronic devices according to any one of claims 1 to 7, characterized in that, The support column (140) is a graphite fiber column; The support column (140) extends along the height direction of the frame (110), and the support column (140) is configured to be axially tensile.

10. The thermal switch device for electronic devices according to any one of claims 1 to 7, characterized in that, The skeleton (110) has a temperature equalization layer (150) on the side facing the chip (30), the temperature equalization layer (150) contacts the chip (30), and the temperature equalization layer (150) is inserted into the capsule column (120), and the support column (140) abuts against the temperature equalization layer (150).

11. An electronic device, characterized in that, include: The electronic device thermal switch (10) according to any one of claims 1 to 10; The circuit board (20) and the chip (30) disposed on the circuit board (20), wherein the frame (110) of the thermal switch device (10) of the electronic device is disposed on the side of the chip (30) away from the circuit board (20); A heat sink (40) is disposed on the side of the chip (30) away from the circuit board (20), and the electronic device thermal switch (10) is located between the heat sink (40) and the chip (30); The capsule column (120) of the electronic device thermal switch device (10) has a first state and an expanded second state. The second state is the expanded state. When the capsule column (120) is in the first state, there is a gap between the capsule column (120) and the heat sink (40). When the capsule column (120) is in the second state, the capsule column (120) is in contact with the heat sink (40).

12. The electronic device according to claim 11, characterized in that, When the capsule column (120) is in the first state, the volume V0 of the capsule column (120) is: V0=A×h0, where A is the cross-sectional area of ​​the capsule column (120) and h0 is the height of the capsule column (120); When the capsule column (120) is in the second state, the volume V1 of the capsule column (120) is: V1=V0×(1+β), where β is the volume expansion rate of the capsule column (120).

13. The electronic device according to claim 12, characterized in that, The gap is δ, and the axial elongation of the capsule column (120) when it switches from the first state to the second state is Δh. δ=Δh=h0×β×C×B, where C is the constraint coefficient, C<1; B is the compression correction coefficient, B>1.

14. The electronic device according to claim 13, characterized in that, When the skeleton (110) is a polymer skeleton, 0.2≤C≤0.5; When the skeleton (110) is a flexible skeleton, 0.8≤C≤0.9; 1.2≤B≤1.3。 15. The electronic device according to claim 14, characterized in that, When the skeleton (110) is a polymer skeleton, the material of the skeleton (110) is polyimide; When the skeleton (110) is a flexible skeleton, the material of the skeleton (110) is silicone rubber.

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