Gallium nitride structure for robot burst stall turn-off and gate driving method thereof

Abstract

This invention relates to the field of semiconductor technology and discloses a gallium nitride (GaN) structure and its gate driving method for sudden stall shutdown of a robot. The structure includes a substrate, inner and outer GaN structures, and a central MOS structure. An intermediate dielectric is deposited between the MOS structure and the inner and outer GaN structures. Side dielectrics are deposited on the left and right sides of the MOS structure. The outer GaN structures, from bottom to top, include a buffer layer, a GaN layer, and an aluminum gallium nitride (AGaN) layer. The outer GaN structure has a drain and a source on either side above the AGaN layer, with a gate between them. The inner GaN structure has a drain and a source on either side above the AGaN layer. This invention achieves electrical connection between the inner and outer GaN structures through the intermediate MOS structure. In the event of sudden stall, a single shutdown signal can be used to simultaneously shut down both devices, significantly improving response speed and simplifying the driving circuit.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a gallium nitride structure for sudden stall shutdown of a robot and its gate driving method. Background Technology

[0002] With the rapid development of robotics technology, especially the increasing demands for power density and response speed in high-dynamic, high-load robot joint drive systems, gallium nitride (GaN) power devices are increasingly being used in robot motor drive circuits due to their high electron mobility, low on-resistance, and high-speed switching characteristics. However, in actual operation, the robot arm or mobile chassis may experience sudden motor stall due to external impacts, overloads, or mechanical jamming. At this time, the motor current rises sharply, and if the drive power devices are not shut off in time, it may lead to overcurrent burnout of the devices, power system failure, or even damage to the robot itself.

[0003] In existing technologies, protection schemes for motor stall typically employ a combination of current detection and software shutdown. Specifically, motor current or speed is detected using a sampling resistor or Hall sensor. When the detected value exceeds a threshold, the microcontroller issues a shutdown signal, simultaneously shutting down the power switching transistors. However, this method has the following drawbacks: First, software processing suffers from millisecond-level delays, making rapid protection impossible in scenarios where the stall current rises at extremely fast rates (microseconds). Second, conventional silicon-based power devices or single gallium nitride devices typically only disconnect the main power circuit during shutdown, lacking synchronous control capabilities for auxiliary or redundant circuits, leading to partial current backflow or secondary surges. Third, in parallel multi-power-device or bridge drive structures, the gate drive signals of each device need independent control; differences in shutdown timing can cause uneven current or voltage spikes, reducing system reliability.

[0004] Furthermore, existing gallium nitride power architectures are mostly single-transistor or half-bridge topologies, lacking a fast coordinated shutdown mechanism for sudden stall scenarios. Some solutions improve response speed to some extent by adding fast comparators and hardware shutdown circuits, but the circuits are complex and costly, and it is difficult to balance efficient conduction during normal operation with rapid shutdown during faults. Summary of the Invention

[0005] This invention provides a gallium nitride structure and its gate driving method for sudden stall shutdown of robots to solve existing technical problems. It solves the problem that most existing gallium nitride power structures are single-transistor or half-bridge topologies and lack a fast collaborative shutdown mechanism for sudden stall scenarios.

[0006] To solve the above-mentioned technical problems, according to one aspect of the present invention, more specifically, a gallium nitride structure for sudden stall shutdown of a robot, comprising a substrate, gallium nitride structures on the inner and outer sides, and a MOS structure located in the middle, wherein an intermediate dielectric is deposited between the MOS structure and the gallium nitride structures on the inner and outer sides, and side dielectrics are deposited on the left and right sides of the MOS structure, and the gallium nitride structures on both sides, from bottom to top, include a buffer layer, a gallium nitride layer, and an aluminum gallium nitride layer; The outer gallium nitride structure includes a drain and a source on both sides above the aluminum gallium nitride layer, with a gate between the drain and the source; the inner gallium nitride structure includes a drain and a source on both sides above the aluminum gallium nitride layer, with a gate between the drain and the source; and P-type gallium nitride is disposed below both gates. The MOS structure in the middle includes an epitaxial layer, an oxide layer, and a control gate, wherein the epitaxial layer is composed of an N-well layer and P-well layers located on both sides above. One end of the gate electrode 1 penetrates through the intermediate medium and is in direct contact with the P-well layer on one side, while the other end of the gate electrode 2 penetrates through the intermediate medium and is in direct contact with the P-well layer on the other side.

[0007] Furthermore, the second drain is a side drain, the second gate is a side gate, and the second source is a side source.

[0008] Furthermore, the side source and side drain are located on the left and right sides respectively, with the side gate closer to the side source.

[0009] Furthermore, an outer metal layer is provided above the drain electrode, and an inner metal layer is provided above the side drain electrode. Both the outer metal layer and the inner metal layer include a long end and a short end.

[0010] Furthermore, the long end of the outer metal layer is in direct contact with the drain electrode, and the long end of the inner metal layer is in direct contact with the side drain electrode. A P-type material and an N-type material are deposited between the short end of the outer metal layer and the short end of the inner metal layer, wherein the P-type material is located on one side of the outer metal layer and the N-type material is located on one side of the inner metal layer.

[0011] Furthermore, the first source and the first drain are located on the left and right sides respectively, with the first gate being closer to the first source; the second drain and the second source are located on the left and right sides respectively, with the second gate being closer to the second source.

[0012] Furthermore, an outer metal layer two is provided above the drain electrode one, and an inner metal layer two is provided above the source electrode two. Both the outer metal layer two and the inner metal layer two include a long end and a short end.

[0013] Furthermore, the long end of the second outer metal layer is in direct contact with the first drain electrode, and the long end of the second inner metal layer is in direct contact with the second source electrode. A tantalum oxide layer and a silver electrode layer are deposited between the short end of the outer metal layer and the short end of the inner metal layer, wherein the tantalum oxide layer is located on one side of the inner metal layer and the silver electrode layer is located on one side of the outer metal layer.

[0014] A gate driving method for gallium nitride structures for sudden stall shutdown of robots includes: Step S1: When the robot is running normally, only the gate drive voltage is applied to the gate. At this time, the gate controls the conduction state of the source and drain in the outer gallium nitride structure, while the inner gallium nitride structure is in the off state. Step S2: Real-time detection of the robot motor's current or speed to determine if a sudden stall has occurred; Step S3: When a sudden stall is detected, a constant turn-on voltage is immediately applied to the control gate to turn on the P-well layers on both sides of the control gate, thereby electrically connecting the first gate and the second gate. Step S4: While maintaining the control gate turn-on voltage, apply a turn-off voltage to gate one. This turn-off voltage acts on both gate one and gate two simultaneously, turning off source one and drain one in the outer gallium nitride structure and turning off drain two and source two in the inner gallium nitride structure. This achieves simultaneous and rapid turn-off of the inner and outer gallium nitride structures, completing the protection against sudden robot stall.

[0015] The gallium nitride structure and its gate driving method for sudden stall shutdown of robots provided by this invention have the following advantages compared with the prior art: 1. This invention achieves electrical connection between the inner and outer gallium nitride structures through the intermediate MOS structure. In the event of sudden stall, a single shutdown signal can be used to simultaneously shut down both devices, significantly improving the response speed and simplifying the drive circuit.

[0016] 2. This invention utilizes a diode structure to achieve unidirectional flow control of positive charges, preventing reverse current surges. Combined with the design of the long and short ends of the metal layer to optimize the current density distribution, it improves the safety of the system during the stall shutdown process.

[0017] 3. This invention introduces a memristor to achieve independent and series operation mode switching for voltage amplitude regulation, without the need for additional switching elements. It can quickly establish a series path to ensure turn-off consistency when the rotor is stalled, and utilizes non-volatile characteristics to assist in fault recovery.

[0018] 4. This invention achieves microsecond-level rapid shutdown by detecting the motor status and prioritizing the activation of the control gate before applying the shutdown voltage. This effectively suppresses stall current surges, is compatible with existing control architectures, and improves the safety and stability of high-dynamic robot joint drive systems. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of Embodiment 1 of the present invention; Figure 2 This is a schematic diagram of Embodiment 2 of the present invention; Figure 3 This is a schematic diagram of Embodiment 3 of the present invention; Figure 4 This is a schematic diagram of the MOS structure in this invention.

[0020] In the diagram: 1. Substrate; 2. Buffer layer; 3. Gallium nitride layer; 4. Aluminum gallium nitride layer; 5. P-type gallium nitride; 6. Side dielectric; 7. Drain 1; 8. Source 1; 9. Gate 1; 10. Intermediate dielectric; 11. Drain 2; 12. Oxide layer; 13. Control gate; 14. Gate 2; 15. Source 2; 16. Outer metal layer 1; 17. Inner metal layer 1; 18. P-type material; 19. N-type material; 20. Tantalum oxide layer; 21. Silver electrode layer; 22. N-well layer; 23. P-well layer; 24. Outer metal layer 2; 25. Inner metal layer 2; 1101. Side drain; 1401. Side gate; 1501. Side source. Detailed Implementation

[0021] To make the technical solution of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0022] Example 1

[0023] like Figure 1 , Figure 4 As shown, according to one aspect of the present invention, a gallium nitride structure for sudden stall shutdown of a robot is provided, comprising a substrate 1, gallium nitride structures on the inner and outer sides, and a MOS structure located in the middle, wherein an intermediate dielectric 10 is deposited between the MOS structure and the gallium nitride structures on the inner and outer sides, and side dielectrics 6 are deposited on the left and right sides of the MOS structure, and the gallium nitride structures on both sides include, from bottom to top, a buffer layer 2, a gallium nitride layer 3, and an aluminum gallium nitride layer 4. In the outer gallium nitride structure, the aluminum gallium nitride layer 4 has a drain 7 and a source 8 on both sides, and a gate 9 is located between the drain 7 and the source 8. In the inner gallium nitride structure, the aluminum gallium nitride layer 4 has a drain 11 and a source 15 on both sides, and a gate 14 is located between the drain 11 and the source 15. P-type gallium nitride 5 is disposed below both the gate 9 and the gate 14. The middle MOS structure includes an epitaxial layer, an oxide layer 12, and a control gate 13. The epitaxial layer is composed of an N-well layer 22 and P-well layers 23 located on both sides above. One end of the gate 9 penetrates the intermediate dielectric 10 and is in direct contact with the P-well layer 23 on one side. The other end of the gate 14 penetrates the intermediate dielectric 10 and is in direct contact with the P-well layer 23 on the other side.

[0024] Among them, source 8 and drain 7 are located on the left and right sides respectively, with gate 9 being closer to the side of source 8; drain 11 and source 15 are located on the left and right sides respectively, with gate 14 being closer to the side of source 15.

[0025] The working principle of this embodiment is as follows: Gate 9 can control the conduction state of source 8 and drain 7; similarly, gate 14 can control the conduction state of drain 11 and source 15. And control gate 13 can control the conduction state of the P-well layers 23 on both sides (e.g., Figure 4 As shown), then control gate 13 can control the conduction state between gate 9 and gate 14. Therefore: When only gate voltage is applied to gate 9, this gate voltage can only control the conduction state of source 8 and drain 7 in the front gallium nitride structure.

[0026] A constant voltage is applied to the control gate 13. At this time, a gate voltage is applied to the gate 9. This gate voltage can control the gallium nitride structure on both the front and rear sides, that is, it can control the conduction state of the source 8 and drain 7, as well as the drain 11 and source 15.

[0027] The electrical connection control of the inner and outer gallium nitride structures is achieved through an intermediate MOS structure. Specifically, after a constant turn-on voltage is applied to the control gate 13, the P-well layers 23 on both sides can be turned on, allowing gate 9 and gate 14 to form an electrical connection path through the P-well layers 23. At this time, the turn-off voltage applied to gate 9 can be synchronously transmitted to gate 14, realizing the simultaneous turn-off of source 8 / drain 7 and drain 11 or source 15. This design avoids the delay problem of needing to independently drive the two gates in traditional solutions, and significantly improves the response speed during sudden stall.

[0028] The advantage of this structure is that it achieves coordinated shutdown of the dual gallium nitride structure using a single control signal (control gate 13), simplifying the drive circuit design. Meanwhile, since gate 1 9 and gate 2 14 are isolated and interconnected through the N-well layer 22 and P-well layer 23 of the MOS structure, cross-interference is avoided, improving the system's reliability and noise immunity. It is particularly suitable for robot motor protection in high-current, high-speed sudden change scenarios.

[0029] Example 2

[0030] like Figure 2 , Figure 4 As shown, according to one aspect of the present invention, a gallium nitride structure for sudden stall shutdown of a robot is provided, wherein a second drain 11 includes a side drain 1101, a second gate 14 includes a side gate 1401, and a second source 15 includes a side source 1501. The side source 1501 and the side drain 1101 are located on the left and right sides, respectively, wherein the side gate 1401 is located closer to the side source 1501. An outer metal layer 16 is provided above the first drain 7, and an inner metal layer 17 is provided above the side drain 1101. Both the outer metal layer 16 and the inner metal layer 17 include a long end and a short end.

[0031] In this embodiment, the long end of the outer metal layer 16 is in direct contact with the drain electrode 7, and the long end of the inner metal layer 17 is in direct contact with the side drain electrode 1101; a P-type material 18 and an N-type material 19 are deposited between the short ends of the outer metal layer 16 and the inner metal layer 17, wherein the P-type material 18 is located on one side of the outer metal layer 16, and the N-type material 19 is located on one side of the inner metal layer 17.

[0032] The working principle of this embodiment is as follows: Gate 9 can control the conduction state of source 8 and drain 7; similarly, side gate 1401 can control the conduction state of side drain 1101 and side source 1501. And control gate 13 can control the conduction state of the P-well layers 23 on both sides (e.g., Figure 4 As shown in the figure, the control gate 13 can control the conduction state between the gate 9 and the side gate 1401.

[0033] Furthermore, the P-type material 18 and the N-type material 19 form a diode, where positive charge can only flow from the P-type material 18 to the N-type material 19, thus creating a pathway. Therefore: By controlling only the gate voltage of the side gate 1401, positive charges can flow from the side source 1501 into the side drain 1101, and then from the side drain 1101 into the drain 7 through the diode. The positive charges can then flow from the drain 7 into the source 8 (this gallium nitride structure is normally open, meaning the drain and source are only disconnected after power is applied. Furthermore, the drain and source do not restrict the current direction; positive charges can flow from the source into the drain or vice versa). In other words, the side gate 1401 can control the conduction between the side source 1501 and the source 8.

[0034] If a constant voltage is applied to the control gate 13, then the side gate 1401 can control the conduction between the side source 1501 and the source 8 (positive charge can only flow in from the side source 1501).

[0035] By introducing a diode structure composed of P-type material 18 and N-type material 19, unidirectional flow control of positive charge is achieved. When the side gate 1401 controls the side source 1501 and side drain 1101 to conduct, positive charge flows in from the side source 1501, passes through the side drain 1101, enters the drain 7 through the diode, and then flows to the source 8, forming a directional current path from the inside to the outside. The opening of the control gate 13 can further enable the side gate 1401 to control the on / off of this path, enhancing the ability to manage the current direction.

[0036] The advantage of this design lies in utilizing the unidirectional conductivity of a diode to prevent reverse current from impacting the inner gallium nitride structure, thus improving the system's safety during stall shutdown. Simultaneously, the long and short end structure of the inner and outer metal layers (outer metal layer-16, inner metal layer-17) optimizes the current density distribution and reduces localized thermal effects, making it suitable for robot drive systems requiring highly directional current control.

[0037] Example 3

[0038] like Figure 3 , Figure 4 As shown, according to one aspect of the present invention, a gallium nitride structure for sudden stall shutdown of a robot is provided, wherein a source 8 and a drain 7 are located on the left and right sides respectively, and a gate 9 is located on the side closer to the source 8; a drain 11 and a source 15 are located on the left and right sides respectively, and a gate 14 is located on the side closer to the source 15. An outer metal layer 24 is provided above the drain 7, and an inner metal layer 25 is provided above the source 15. Both the outer metal layer 24 and the inner metal layer 25 include a long end and a short end.

[0039] In this embodiment, the long end of the outer metal layer 24 is in direct contact with the drain electrode 7, and the long end of the inner metal layer 25 is in direct contact with the source electrode 15. A tantalum oxide layer 20 and a silver electrode layer 21 are deposited between the short ends of the outer metal layer 24 and the inner metal layer 25, wherein the tantalum oxide layer 20 is located on one side of the inner metal layer 25, and the silver electrode layer 21 is located on one side of the outer metal layer 24.

[0040] The working principle of this embodiment is as follows: Gate 9 can control the conduction state of source 8 and drain 7; similarly, gate 14 can control the conduction state of drain 11 and source 15. And control gate 13 can control the conduction state of the P-well layers 23 on both sides (e.g., Figure 4 As shown in the figure, the control gate 13 can control the conduction state between gate 9 and gate 14.

[0041] Furthermore, the tantalum oxide layer 20 and the silver electrode layer 21 constitute a memristor. That is, if the potential difference between the memristors exceeds the threshold voltage, the memristor will become a closed circuit; otherwise, it will become an open circuit. Therefore: When gate 14 controls drain 11 and source 15 to conduct, if a lower conduction voltage is applied, the gallium nitride structures on the inner and outer sides will operate independently.

[0042] When a constant voltage is applied to the control gate 13, and a higher on-state voltage is applied when the gate 14 controls the drain 11 and source 15 to conduct, then the gallium nitride structures on both the inner and outer sides operate in series.

[0043] A memristor consisting of a tantalum oxide layer 20 and a silver electrode layer 21 is integrated between the inner and outer metal layers. When the control gate 13 is turned on and the gate 14 is turned on, if a high on-state voltage is applied, the potential difference across the memristor exceeds the threshold voltage, causing the tantalum oxide layer 20 and the silver electrode layer 21 to switch to the on state, connecting the drain 7 and the source 15 in series, thus achieving coordinated operation of the inner and outer gallium nitride structures. If the voltage is low, the memristor remains open, and the two structures operate independently.

[0044] The advantage of this structure is that it allows switching between independent and series operating modes simply by adjusting the voltage amplitude, eliminating the need for additional switching components and simplifying the system topology. In the event of a sudden stall, a high voltage can be used to quickly establish a series path, ensuring synchronous transmission of the turn-off signal and improving turn-off consistency. Furthermore, the non-volatile nature of the memristor allows it to retain its state after a power outage, aiding in system status assessment after fault recovery.

[0045] Example 4

[0046] like Figure 1 As shown, according to one aspect of the present invention, a gate driving method for a gallium nitride structure for sudden stall shutdown of a robot is provided, comprising: Step S1: When the robot is running normally, only the gate drive voltage is applied to the gate 9. At this time, the gate 9 controls the conduction state of the source 8 and drain 7 in the outer gallium nitride structure, while the inner gallium nitride structure is in the off state. Step S2: Real-time detection of the robot motor's current or speed to determine if a sudden stall has occurred; Step S3: When a sudden stall is detected, a constant turn-on voltage is immediately applied to the control gate 13 to turn on the P-well layers 23 on both sides of the control gate 13, thereby electrically connecting the gate 19 and the gate 24. Step S4: While maintaining the turn-on voltage of the control gate 13, a turn-off voltage is applied to the gate 9. This turn-off voltage acts on both the gate 9 and the gate 14, turning off the source 8 and drain 7 in the outer gallium nitride structure and turning off the drain 11 and source 15 in the inner gallium nitride structure. This achieves simultaneous and rapid turn-off of the gallium nitride structures on both the inner and outer sides, thus completing the protection against sudden robot stall.

[0047] The stall state is determined in real time by detecting the motor current or speed, and the control gate 13 is immediately triggered to open when an abnormality is detected, electrically connecting gate 9 and gate 14. Subsequently, only a single turn-off voltage needs to be applied to gate 9 to simultaneously turn off the gallium nitride structures on both the inner and outer sides. This method utilizes the timing coordination of steps S3 and S4 to avoid the delay and logic conflict of controlling two gates separately in traditional schemes, achieving rapid turn-off within microseconds.

[0048] Its advantages lie in its clear driving logic, rapid response, and compatibility with existing robot motor control architectures, requiring no significant hardware modifications. By prioritizing the activation of control gate 13 before applying the turn-off voltage, it ensures that both the inner and outer structures simultaneously enter the turn-off state, effectively suppressing the impact of stall current on the motor and drive circuit. This method is particularly suitable for high-power-density, high-dynamic-response robot joint drive systems, significantly improving system safety and stability.

[0049] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A gallium nitride structure for sudden stall shutdown of a robot, comprising a substrate (1), gallium nitride structures on the inner and outer sides, and a MOS structure in the middle, wherein an intermediate dielectric (10) is deposited between the MOS structure and the gallium nitride structures on the inner and outer sides, and side dielectrics (6) are deposited on the left and right sides of the MOS structure, characterized in that: The gallium nitride structure on both sides includes, from bottom to top, a buffer layer (2), a gallium nitride layer (3), and an aluminum gallium nitride layer (4). The outer gallium nitride structure includes a drain (7) and a source (8) on both sides above the aluminum gallium nitride layer (4), and a gate (9) is located between the drain (7) and the source (8); the inner gallium nitride structure includes a drain (11) and a source (15) on both sides above the aluminum gallium nitride layer (4), and a gate (14) is located between the drain (11) and the source (15); P-type gallium nitride (5) is disposed below both the gate (9) and the gate (14); The MOS structure in the middle includes an epitaxial layer, an oxide layer (12), and a control gate (13), wherein the epitaxial layer is composed of an N-well layer (22) and P-well layers (23) located on both sides above; One end of the first gate (9) passes through the intermediate medium (10) and is in direct contact with the P-well layer (23) on one side, and the other end of the second gate (14) passes through the intermediate medium (10) and is in direct contact with the P-well layer (23) on the other side.

2. The gallium nitride structure for sudden stall shutdown of a robot according to claim 1, characterized in that: The second drain (11) includes a side drain (1101), the second gate (14) includes a side gate (1401), and the second source (15) includes a side source (1501).

3. The gallium nitride structure for sudden stall shutdown of a robot according to claim 2, characterized in that: The side source (1501) and side drain (1101) are located on the left and right sides respectively, with the side gate (1401) on the side closer to the side source (1501).

4. The gallium nitride structure for sudden stall shutdown of a robot according to claim 3, characterized in that: An outer metal layer (16) is provided above the drain electrode (7), and an inner metal layer (17) is provided above the side drain electrode (1101). Both the outer metal layer (16) and the inner metal layer (17) include a long end and a short end.

5. The gallium nitride structure for sudden stall shutdown of a robot according to claim 4, characterized in that: The long end of the outer metal layer (16) is in direct contact with the drain electrode (7), and the long end of the inner metal layer (17) is in direct contact with the side drain electrode (1101). A P-type material (18) and an N-type material (19) are deposited between the short end of the outer metal layer (16) and the short end of the inner metal layer (17), wherein the P-type material (18) is located on one side of the outer metal layer (16) and the N-type material (19) is located on one side of the inner metal layer (17).

6. The gallium nitride structure for sudden stall shutdown of a robot according to claim 1, characterized in that: The first source electrode (8) and the first drain electrode (7) are located on the left and right sides respectively, with the first gate electrode (9) being closer to the first source electrode (8); the second drain electrode (11) and the second source electrode (15) are located on the left and right sides respectively, with the second gate electrode (14) being closer to the second source electrode (15).

7. The gallium nitride structure for sudden stall shutdown of a robot according to claim 6, characterized in that: An outer metal layer 2 (24) is provided above the drain electrode 1 (7), and an inner metal layer 2 (25) is provided above the source electrode 2 (15). Both the outer metal layer 2 (24) and the inner metal layer 2 (25) include a long end and a short end.

8. The gallium nitride structure for sudden stall shutdown of a robot according to claim 7, characterized in that: The long end of the second outer metal layer (24) is in direct contact with the first drain electrode (7), and the long end of the second inner metal layer (25) is in direct contact with the second source electrode (15). A tantalum oxide layer (20) and a silver electrode layer (21) are deposited between the short end of the outer metal layer (24) and the short end of the inner metal layer (25), wherein the tantalum oxide layer (20) is located on one side of the inner metal layer (25) and the silver electrode layer (21) is located on one side of the outer metal layer (24).

9. A gate driving method for a gallium nitride structure used for sudden stall shutdown of a robot, characterized in that, The gallium nitride structure for sudden stall shutdown of a robot, as described in any one of claims 1-8, comprises the following gate driving method: Step S1: When the robot is running normally, only the gate drive voltage is applied to the gate (9). At this time, the gate (9) controls the conduction state of the source (8) and drain (7) in the outer gallium nitride structure, while the inner gallium nitride structure is in the off state. Step S2: Real-time detection of the robot motor's current or speed to determine if a sudden stall has occurred; Step S3: When a sudden stall is detected, a constant turn-on voltage is immediately applied to the control gate (13) to turn on the P-well layers (23) on both sides of the control gate (13), thereby making the gate one (9) and the gate two (14) electrically connected. Step S4: While maintaining the turn-on voltage of the control gate (13), a turn-off voltage is applied to the gate one (9). This turn-off voltage acts on both the gate one (9) and the gate two (14), turning off the source one (8) and drain one (7) in the outer gallium nitride structure, and turning off the drain two (11) and source two (15) in the inner gallium nitride structure.

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