A dynamic regulation of volatile and non-volatile memristor and a preparation method thereof

Abstract

The application discloses a kind of dynamic regulation volatile and non-volatile memristor and preparation method thereof, the device includes: substrate, resistance change function layer and top electrode are stacked from bottom to top;Substrate is single crystal oxide substrate, resistance change function layer is protonated rare earth nickel oxide film epitaxially grown on substrate;Resistance change function layer has non-uniform migration mechanics energy barrier field generated by epitaxial strain induction inside, for switching between two paths of local migration in lattice and long-range migration across lattice by voltage amplitude regulation driving proton, to reconstruct volatile or non-volatile resistance change behavior in situ.The application solves the problem of function switching of dual-mode memristor in the prior art, which depends on physical size static preset, needs to configure complex current-limiting peripheral circuit for regulation and causes function instability due to thermal disturbance in high temperature environment.

Description

Technical Field

[0001] This invention relates to the fields of microelectronic device technology and brain-like artificial intelligence hardware technology, specifically to a memristor with dynamically adjustable volatile and non-volatile properties and its fabrication method. Background Technology

[0002] Neuromorphic computing requires synaptic devices to mimic the complex dynamics of biological synapses, i.e., to integrate volatile (short-range plasticity, STP) and non-volatile (long-range plasticity, LTP) functions within a single physical unit. However, existing memristor synaptic devices still suffer from the following technical limitations in achieving this goal: (1) Functional coupling and system redundancy caused by the single resistive switching mechanism: The resistive switching mechanism of the current mainstream memristors is often exclusive. For example, devices based on the conductive filament mechanism usually exhibit strong non-volatility and are difficult to simulate the relaxation behavior of biological synapses; while devices based on the threshold switching mechanism often exhibit pure volatility. If you want to achieve two functions in a single system, you usually need to heterogeneously integrate two devices with different physical mechanisms, which greatly increases the circuit area overhead, parasitic power consumption and system complexity.

[0003] (2) Static nature and hardware overhead of existing control methods: To address the dual-mode integration challenge, existing technologies mainly use two paths for control, but both have significant limitations. Path one relies on the static pre-setting of the physical structure, pre-setting the volatile and non-volatile characteristics of the device by precisely controlling the critical thickness of the functional layer. This means that the device's functional mode is fixed after fabrication and cannot be dynamically reconfigured according to real-time algorithm requirements. Path two relies on the dynamic control of external current limiting, controlling the stability of the conductive filament to achieve dual-mode conversion by changing the external limiting current. However, this approach requires each memory cell to be equipped with a high-precision adjustable current limiting circuit, which leads to huge external circuit overhead. Furthermore, because the device is highly sensitive to fluctuations in the current limiting value, even slight current deviations can easily cause irreversible reverse breakdown of the conductive filament, resulting in permanent damage to the device.

[0004] (3) Functional degradation and dual-mode imbalance under extreme conditions: When existing dual-mode memristor devices operate in extreme temperature environments above 150°C, their resistive switching dynamics behavior undergoes irreversible functional degradation due to exceeding the critical threshold of thermal disturbance. According to the Arrhenius equation, the ion diffusion rate increases exponentially with increasing temperature, leading to instability of the controllable ion transport process at room temperature, which in turn disrupts the dynamic balance between volatile and non-volatile storage modes. In volatile mode, the simulation of short-term plasticity relies on the spontaneous relaxation behavior of ions with low migration barriers. When the ambient temperature rises to 160°C, carriers such as protons or oxygen vacancies enter a violent thermal diffusion state under strong thermal excitation, causing the relaxation time constant to decay by orders of magnitude. The timing feature extraction function loses its practicality due to the runaway response speed. In non-volatile mode, the long-term storage function relies on the stability of the conductive filament structure. Under the action of high-energy thermal perturbation at 160°C, the probability of thermal activation of ions inside the storage layer increases significantly, causing ions to cross the potential barrier and undergo thermal regression, resulting in the resistive state drifting to the initial value. Alternatively, the conductive filament may undergo thermal melting due to the Joule heating effect, destroying the physical structure and ultimately leading to storage weight drift and data loss.

[0005] In summary, there is an urgent need for a technical solution that can break free from the dependence on preset physical dimensions or complex current-limiting circuits, and can effectively suppress thermodynamic interference and maintain dual-modal functional isolation and control accuracy in the extreme temperature range of 160°C. Summary of the Invention

[0006] The purpose of this invention is to provide a dynamically adjustable volatile and non-volatile memristor and its fabrication method, in order to solve the problems of dual-mode memristor function switching relying on static preset physical dimensions, requiring complex current-limiting peripheral circuits for regulation, and functional instability caused by thermal disturbances in high-temperature environments.

[0007] To achieve the above objectives, the present invention adopts the following technical solution: A memristor capable of dynamically controlling volatile and non-volatile behavior includes: a substrate, a resistive switching layer, and a top electrode stacked from bottom to top; the substrate is a single-crystal oxide substrate, and the resistive switching layer is a protonated rare-earth nickel oxide thin film epitaxially grown on the substrate; the resistive switching layer has a non-uniform migration kinetic energy barrier field induced by epitaxial strain, which is used to drive the protons to switch between two paths: local migration within the crystal lattice and long-range migration across the crystal lattice, through voltage amplitude regulation, so as to reconstruct volatile or non-volatile resistive switching behavior in situ.

[0008] To optimize the above technical solution, the specific limitations also include: The single-crystal oxide substrate is a single-crystal oxide substrate with a perovskite structure and a (001) crystal plane on its surface; the protonated rare-earth nickel oxide is expressed as H. x NdNiO3, where 0 <X≤1。

[0009] Preferably, the kinetic energy barrier for long-range proton migration across the lattice is higher than the kinetic energy barrier for local proton migration within the lattice, wherein the kinetic energy barrier for long-range proton migration across the lattice is not less than 0.65 eV.

[0010] Furthermore, the thickness of the resistive switching functional layer is 50nm~200nm; the top electrode is a metallic Ti electrode with a thickness of 50nm~200nm.

[0011] This invention also provides a method for fabricating a memristor that dynamically controls volatile and non-volatile properties, comprising the following steps: S1: Select a single-crystal oxide substrate and perform surface pretreatment to remove surface impurities; S2: On the substrate, a rare earth nickel oxide thin film is epitaxially grown to form a thin film layer with epitaxial strain; S3: Protonation treatment is performed on rare earth nickel oxide thin films to form protonated rare earth nickel oxide resistive switching functional layers. S4: A top electrode is formed on the resistive switching functional layer.

[0012] Further, in step S1, the surface pretreatment specifically involves ultrasonically cleaning with acetone, ethanol, and deionized water for 20-40 minutes in sequence to remove surface impurities.

[0013] Further, in step S2, the epitaxial growth of the rare-earth nickel oxide thin film specifically involves: using pulsed laser deposition at a substrate temperature of 550°C~750°C, an oxygen partial pressure of 100mTorr~200mTorr, a frequency of 2Hz~4Hz, and a laser energy density of 1.5J / cm². 2 ~2.5J / cm 2 Rare earth nickel oxide films are deposited and grown under certain conditions.

[0014] Preferably, the protonation treatment specifically involves: setting a catalyst layer on the surface of a rare earth nickel oxide film; placing it in a pure hydrogen atmosphere at 150°C to 200°C for 15 to 25 minutes for hydrogen overflow treatment, whereby protons are embedded into the lattice through the hydrogen overflow effect to form a protonated rare earth nickel oxide resistive switching functional layer.

[0015] Preferably, in step S4, forming a top electrode on the resistive switching functional layer specifically involves: patterning the surface of the resistive switching functional layer using photolithography, and depositing a metal electrode layer using magnetron sputtering.

[0016] Compared with the prior art, the beneficial effects of the present invention are: This invention provides a dynamically controllable volatile and non-volatile memristor and its fabrication method. By employing a protonated rare-earth nickel oxide thin film as the resistive switching functional layer, and considering the non-uniform migration kinetic energy barrier field induced by epitaxial strain within this film, the memristor can switch between two kinetic paths—local migration within the crystal lattice and long-range migration across the lattice—by changing the amplitude of the applied voltage. This allows for the in-situ and dynamic reconstruction of both volatile and non-volatile resistive switching behaviors within a single physical unit, achieving electrically controlled switching of functional modes. By controlling the amplitude of a single voltage signal, this invention solves the problems of statically fixed functional modes, reliance on pre-defined physical dimensions, or heterogeneous integration in existing dual-mode memristors, which lead to system redundancy and poor flexibility.

[0017] Furthermore, this invention designs and utilizes the transport characteristics of the transition from electron-dominated to electron-proton co-dominated mode in the resistive switching functional layer at high temperatures to achieve a kinetic energy barrier of no less than 0.65 eV for long-range proton migration across the lattice. This high activation energy effectively suppresses thermal regression of protons under extreme high-temperature conditions, ensuring the long-term stability of multi-state conductance at high temperatures. This solves the problem of functional instability and degradation of existing dual-mode memristors in high-temperature environments, where thermal disturbances exacerbate ion thermal regression, leading to volatile functional timing loss, and non-volatile storage data drift or loss. Attached Figure Description

[0018] Figure 1 : A schematic diagram of the structure of the dynamically adjustable volatile and non-volatile memristor of the present invention.

[0019] Figure 2 : A schematic diagram of the fabrication process of the dynamically adjustable volatile and non-volatile memristor of the present invention.

[0020] Figure 3 The present invention provides the retention characteristic curves of the dynamically adjustable volatile and non-volatile memristor at 160°C for eight typical non-volatile conductance states.

[0021] Figure 4 The present invention provides a schematic diagram of the volatile resistive switching behavior of a dynamically adjustable volatile and non-volatile memristor based on low-amplitude pulse voltage excitation.

[0022] Figure 5 The present invention provides a schematic diagram illustrating the transition of the dynamic control of volatile and non-volatile memristors from volatile to non-volatile behavior through pulse voltage regulation of device behavior. Detailed Implementation

[0023] The present invention will be further described in detail below through specific embodiments, but it should not be construed as limiting the scope of the subject matter of the present invention to the following embodiments. All technologies implemented based on the above content of the present invention fall within the scope of the present invention.

[0024] In one embodiment, the present invention provides a memristor capable of dynamically regulating volatile and non-volatile resistance switching, and a schematic structural diagram thereof is Figure 1 shown. The memristor has a typical sandwich stacked structure, and the physical sequence from bottom to top is a single-crystal substrate, a resistance-switching functional layer and a metal top electrode in sequence. The substrate is a single-crystal oxide substrate, and the resistance-switching functional layer is a protonated rare-earth nickel oxide thin film epitaxially grown on the substrate.

[0025] The substrate of the memristor is a single-crystal oxide substrate with a perovskite structure and a (001) crystal plane on the surface, and a SrTiO3 (001) single-crystal substrate is used. The substrate not only serves as physical support, but also provides an initial epitaxial strain field through lattice mismatch between the substrate and the upper thin film.

[0026] The thickness of the resistance-switching functional layer is 50 nm to 200 nm, preferably 100 nm. The chemical formula of the protonated rare-earth nickel oxide is H x XNdNiO3, wherein 0 < X ≤ 1; the interior of the resistance-switching functional layer has non-uniform migration dynamic energy barriers modulated by epitaxial strain.

[0027] On the side of the resistance-switching functional layer away from the substrate, a metal Ti top electrode with a thickness of 50 nm to 200 nm, preferably 100 nm, is stacked. The top electrode is prepared by a magnetron sputtering process, and forms good electrical contact with the functional layer.

[0028] By applying field excitations with different amplitudes between the two top electrodes, protons in the functional layer are driven to perform directional migration or locking under different dynamic paths, so that two resistance switching behaviors, volatile and non-volatile, are reconstructed in-situ in a single physical unit. Wherein, the dynamic energy barrier (activation energy) corresponding to the long-range migration of protons across the crystal lattice is set to be not less than 0.65 eV. This high activation energy characteristic originates from the electron-proton cooperative transport mechanism excited by the device in a high temperature range above 80°C, which can effectively inhibit the thermal backtracking of protons in an extreme environment of 160°C.

[0029] Under low-voltage excitation, the energy imparted to protons by the electric field can only cause the protons to produce a finite displacement inside the lattice unit and spontaneously relax after power removal, which is manifested as volatile STP behavior; under high-voltage excitation, the protons obtain kinetic energy sufficient to cross the lattice barrier to produce long-range migration and form stable coordination locking with the lattice, simulating non-volatile LTP behavior.

[0030] The present invention also provides a method for preparing a memristor capable of dynamically regulating volatile and non-volatile resistance switching, as Figure 2 shown, comprising the following steps: S1: Substrate pretreatment: a single-crystal SrTiO3 (001) is selected as the substrate, and acetone, ethanol and deionized water are sequentially used for ultrasonic cleaning for 20 to 40 minutes to remove surface impurities; S2: Epitaxial Thin Film Growth: The pretreated substrate is placed in the vacuum chamber of a pulsed laser deposition system. Using NdNiO3 as the target material, epitaxial growth is performed under conditions of substrate temperature 550°C~750°C and oxygen partial pressure 100mTorr~200mTorr using a KrF excimer laser (wavelength 248nm) with a frequency of 2Hz~4Hz and a laser energy density of 1.5J / cm2~2.5J / cm2. Through controlled deposition of 3000 laser pulses, an NdNiO3 epitaxial thin film with a thickness of approximately 50nm~200nm is formed in situ on the substrate surface. After deposition, a pressure of 3.8×10⁻⁶ is introduced into the chamber. 5 The oxygen in mTorr was removed and kept in situ for 20-40 minutes to suppress the oxygen vacancy concentration inside the film, and then annealed at a rate of 10℃ / min to room temperature. S3: Protonation Modification: A metal Pt catalyst layer with a thickness of approximately 50 nm was deposited on the surface of an NdNiO3 thin film using magnetron sputtering. The sample was placed in an annealing chamber and treated at 150°C~200°C for 15~25 minutes in a hydrogen atmosphere with 99% purity. The Pt layer, acting as a catalytic center, dissociates hydrogen molecules into protons. The protons are then embedded into the crystal lattice through the hydrogen overflow effect to form a protonated functional layer. After the hydrogenation treatment, the residual Pt layer on the film surface was wiped off. S4: Top electrode fabrication: Patterning is performed using photolithography. AZ5214 photoresist is spin-coated onto the functional layer surface at a rotation speed of 3500rpm~4500rpm for 30s. Then, it is pre-baked on a hot plate at 90℃~110℃ for 60 seconds. After single-sided exposure using a high-precision single-sided photolithography machine (G-25D4), it is transferred to a hot plate at 110℃~130℃ and baked for 120 seconds. Then, it undergoes maskless full-area ultraviolet exposure and is developed with AZ300MIF developer for 60 seconds to form the electrode pattern. Finally, a metal Ti layer with a thickness of 50nm~200nm is deposited as the top electrode by magnetron sputtering to obtain the memristor.

[0031] To further understand the technical solution of the present invention, a detailed description is provided in conjunction with specific embodiments: Example Memristors are fabricated using the dynamic control method for volatile and non-volatile memristors provided by this invention. The specific steps are as follows: Single-crystal SrTiO3(001) is selected as the substrate and ultrasonically cleaned sequentially with acetone, ethanol, and deionized water for 30 minutes to remove surface impurities; Epitaxial film growth: The pretreated substrate is placed in the vacuum chamber of a pulsed laser deposition system, using NdNiO3 as the target material, and under conditions of a substrate temperature of 550°C and an oxygen partial pressure of 150 mTorr, a laser is grown at a frequency of 4 Hz and a laser energy density of 2 J / cm². 2Epitaxial growth was performed using a KrF excimer laser (wavelength 248 nm), with controlled deposition via 3000 laser pulses to form an approximately 100 nm thick NdNiO3 epitaxial film on the substrate surface in situ. After deposition, a pressure of 3.8 × 10⁻⁶ was introduced into the chamber. 5 The oxygen in mTorr was removed and kept in situ for 30 minutes to suppress the oxygen vacancy concentration inside the membrane, and then cooled to room temperature at a rate of 10 °C / min. S3: Protonation Modification: A metal Pt catalyst layer with a thickness of approximately 50 nm was locally deposited on the surface of an NdNiO3 thin film using magnetron sputtering. The sample was placed in an annealing chamber and treated at 180°C for 20 minutes in a hydrogen atmosphere with a purity of 99%. The Pt layer, acting as a catalytic center, dissociates hydrogen molecules into protons. The protons are then embedded into the crystal lattice through the hydrogen overflow effect to form a protonated functional layer. After the hydrogenation treatment, the residual Pt layer on the film surface was wiped off. S4: Top electrode fabrication: Patterning was performed using photolithography. AZ5214 photoresist was spin-coated onto the functional layer surface at 4000 rpm for 30 seconds. Then, it was pre-baked on a hot plate at 100°C for 60 seconds. After single-sided exposure using a high-precision single-sided photolithography machine (G-25D4), it was transferred to a hot plate at 120°C and baked for 120 seconds. Then, it underwent maskless full-area UV exposure and was developed with AZ300MIF developer for 60 seconds to form the electrode pattern. Finally, a 100 nm thick layer of metallic Ti was deposited as the top electrode by magnetron sputtering to obtain the memristor.

[0032] The fabricated memristor exhibits a sandwich-stacked structure of a substrate, a resistive switching layer, and a top electrode. The resistive switching layer is a protonated rare-earth nickel oxide film with a thickness of approximately 100 nm epitaxially grown on a SrTiO3(001) substrate, and the top electrode is a metallic Ti electrode with a thickness of approximately 100 nm. To verify the function and performance of the fabricated device, systematic electrical tests and analyses were performed. like Figure 3 As shown, in a high-temperature environment of 160°C, applying a series of electrical pulses with specific amplitudes and timings to the device allows its conduction state to be precisely programmed to eight different and uniformly distributed levels. After the programming signals are removed, none of the eight conduction states exhibited observable drift or overlap during an observation period of up to 3000 seconds, demonstrating excellent retention characteristics. This stability stems from a high-temperature excited electron-proton cooperative transport mechanism: experimental data fitting derivation shows that at this temperature, protons need to overcome a kinetic energy barrier as high as 0.698 eV to generate long-range translattice displacements. This activation energy, enhanced by the random transition, allows protons driven by a strong electric field to be effectively locked in lattice sites even under extreme thermal perturbations at 160°C, physically suppressing ion thermal regression and ensuring the high-temperature stability of the non-volatile state.

[0033] like Figure 4As shown, when a write voltage pulse with an amplitude ranging from 0.2V to 2.5V is applied to the device, it exhibits typical analog volatile resistive switching behavior. Within this range, the electric field drives the protons in the resistive switching functional layer to shift and redistribute along their paths within the lattice units, resulting in an increase in conductance. After the voltage is removed, the protons spontaneously relax back to their original positions under thermal perturbation, and the conductance decays accordingly, thus simulating the volatility of biological synapses. The data indicate that the time constant of conductance relaxation increases with the increase of the write voltage amplitude, and precise control of the device's short-time memory characteristics can be achieved by simply adjusting the excitation voltage.

[0034] like Figure 5 As shown, by adjusting the pulse voltage sequence written in the range of 0.2V to 6.0V, the decay rate and final hold level of the device's conductivity state can be continuously and precisely adjusted. In the low-voltage stage (below 2.5V), protons are confined within the lattice units and undergo local displacement, exhibiting rapid relaxation characteristics after power removal. As the voltage amplitude gradually increases, the strong electric field drives protons to overcome high kinetic barriers and undergo long-range migration across the lattice, causing the residual conductivity after power removal to increase exponentially with increasing voltage, achieving a continuous transition between non-volatile states. This mechanism allows for dynamic reconfiguration of the device's functional characteristics according to real-time computing task requirements without altering any hardware structure, simply by adjusting the bias voltage, thus improving the flexibility and energy efficiency of neuromorphic computing hardware.

[0035] Comparative Example The substrate is a SiO2 composite substrate, in which a heavily doped silicon wafer serves as the physical support and bottom electrode lead-out layer, thermally grown SiO2 is the insulating layer, Ti is the adhesion layer, and the topmost Pt layer serves as the bottom electrode. The resistive switching functional layer is an amorphous hafnium oxide thin film deposited on the Pt bottom electrode, with the chemical formula HfO2 and a thickness of approximately 20 nm. This film is prepared by atomic layer deposition (ALD) and has an amorphous contact with the substrate, without any epitaxial relationship. The top electrode is a circular titanium nitride top electrode prepared by photolithography and sputtering processes, with a thickness of approximately 100 nm.

[0036] Unlike the previous embodiment, to achieve the switching between volatile and non-volatile behavior, a high-precision, programmable current-limiting transistor needs to be connected in series with each memristor cell. By setting an extremely low limiting current (5µA) through external circuitry, unstable conductive filaments are formed in HfO2. After the voltage is released, the filaments thermally break, simulating volatility. By setting a higher limiting current (50µA), stable filaments are formed, achieving non-volatile storage.

[0037] To achieve dual-mode functionality, this device relies entirely on complex external circuitry, resulting in low chip area utilization and high power consumption. Furthermore, the device's resistive switching behavior is extremely sensitive to fluctuations in the limiting current value. Small current deviations caused by process variations or electrical noise can lead to the accidental formation of permanent filaments during volatile operations and irreversible breakdown of the filaments during non-volatile write operations.

[0038] At a high temperature of 160°C, the memristor's function severely degraded, and its dual-mode imbalance occurred. Due to the intense thermal motion of oxygen vacancies, unstable filaments underwent uncontrolled growth with thermal assistance during the realization of volatile behavior, causing the relaxation time of the device's short-term memory to become uncontrolled. In non-volatile mode, the stored conductive filament structure under thermal disturbances underwent reconstruction, coarsening, and breakage, causing the stored conductance state to drift significantly or even be completely lost in a short period of time, making it impossible to maintain long-term stability. The effective control window for limiting current shifted and narrowed at high and low temperatures, making it impossible for the same set of circuit parameters to work in a wide temperature range, and the dual-mode function completely failed at extreme temperatures.

[0039] In summary, schemes that rely on external complex circuits to control a single filament mechanism have significant drawbacks in terms of hardware efficiency, control reliability, and wide-temperature range operation capability. In contrast, the memristor prepared by the method of this invention achieves dynamically reconfigurable dual-mode resistive switching behavior that is controlled solely by voltage amplitude through the design of the intrinsic non-uniform migration kinetic energy barrier field of the material. Furthermore, it achieves better high-temperature operating stability through the high activation energy generated by electron-proton cooperative transport.

[0040] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any simple modifications, equivalent substitutions, and improvements made by those skilled in the art to the above embodiments without departing from the scope of the technical solution of the present invention, based on the technical essence of the present invention, shall still fall within the protection scope of the technical solution of the present invention.

Claims

1. A memristor with dynamically adjustable volatile and non-volatile properties, characterized in that, include: The substrate, the resistive switching functional layer, and the top electrode are stacked from bottom to top. The substrate is a single-crystal oxide substrate, and the resistive switching functional layer is a protonated rare-earth nickel oxide thin film epitaxially grown on the substrate. The resistive switching functional layer has a non-uniform migration kinetic energy barrier field induced by epitaxial strain, which is used to drive the protons to switch between two paths: local migration within the crystal lattice and long-range migration across the crystal lattice, so as to reconstruct volatile or non-volatile resistive switching behavior in situ.

2. The dynamically adjustable volatile and non-volatile memristor according to claim 1, characterized in that: The single-crystal oxide substrate is a single-crystal oxide substrate with a perovskite structure and a (001) crystal plane on its surface; the protonated rare-earth nickel oxide is expressed as H. x NdNiO3, where 0 <X≤1。 3. The dynamically adjustable volatile and non-volatile memristor according to claim 1, characterized in that: The kinetic energy barrier for long-range proton migration across the lattice is higher than that for local proton migration within the lattice. Specifically, the kinetic energy barrier for long-range proton migration across the lattice is not lower than 0.65 eV.

4. The dynamically adjustable volatile and non-volatile memristor according to claim 1, characterized in that: The thickness of the resistive switching functional layer is 50nm~200nm; the top electrode is a metallic Ti electrode with a thickness of 50nm~200nm.

5. A method for fabricating a memristor with dynamically adjustable volatile and non-volatile properties as described in claims 1-4, characterized in that, Includes the following steps: S1: Select a single-crystal oxide substrate and perform surface pretreatment to remove surface impurities; S2: On the substrate, a rare earth nickel oxide thin film is epitaxially grown to form a thin film layer with epitaxial strain; S3: Protonation treatment is performed on rare earth nickel oxide thin films to form protonated rare earth nickel oxide resistive switching functional layers. S4: A top electrode is formed on the resistive switching functional layer.

6. The method for fabricating a dynamically adjustable volatile and non-volatile memristor according to claim 5, characterized in that: In step S1, the surface pretreatment specifically involves ultrasonically cleaning with acetone, ethanol, and deionized water for 20-40 minutes in sequence to remove surface impurities.

7. The method for fabricating a dynamically adjustable volatile and non-volatile memristor according to claim 5, characterized in that: In step S2, the epitaxial growth of rare-earth nickel oxide thin films specifically involves: using pulsed laser deposition at a substrate temperature of 550°C~750°C, an oxygen partial pressure of 100mTorr~200mTorr, a frequency of 2Hz~4Hz, and a laser energy density of 1.5J / cm². 2 ~2.5J / cm 2 Rare earth nickel oxide films are deposited and grown under certain conditions.

8. The method for fabricating a dynamically adjustable volatile and non-volatile memristor according to claim 5, characterized in that: The protonation treatment specifically involves: setting a catalyst layer on the surface of a rare earth nickel oxide film; placing it in a pure hydrogen atmosphere at 150°C~200°C for 15~25 minutes for hydrogen overflow treatment, where protons are embedded into the lattice through the hydrogen overflow effect to form a protonated rare earth nickel oxide resistive switching functional layer.

9. The method for fabricating a dynamically adjustable volatile and non-volatile memristor according to claim 5, characterized in that: In step S4, forming the top electrode on the resistive switching functional layer specifically involves: patterning the surface of the resistive switching functional layer using photolithography, and depositing a metal electrode layer using magnetron sputtering.

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