capacitor

Abstract

A capacitor includes a substrate (2) having a first main surface on one side and a second main surface on the other side, a plurality of first internal electrode formation through holes (3) that pass through the substrate in a thickness direction, a plurality of second internal electrode formation through holes (4) that pass through the substrate in the thickness direction, a first internal electrode (5) composed of an electric conductor buried in the first internal electrode formation through holes, and a second internal electrode (6) composed of an electric conductor buried in the second internal electrode formation through holes. When viewed from above in a normal direction orthogonal to the first main surface, a plurality of internal electrode formation through holes (3, 4) including the plurality of first internal electrode formation through holes (3) and the plurality of second internal electrode formation through holes (4) are arranged in a grid shape.

Description

[0001] This application is a divisional application of the patent application filed on December 9, 2020, with application number 202080098369.4 and entitled "Capacitor and Method for Manufacturing a Capacitor". Technical Field

[0002] This invention relates to capacitors and methods for manufacturing capacitors. Background Technology

[0003] Patent Document 1 Figure 1 and Figure 2 A capacitor element is disclosed, comprising: a first buried electrode embedded in a first opening formed on one side (upper surface) of a substrate; and a second buried electrode embedded in a second opening formed on the other side (lower surface) of the substrate. The substrate is composed of a silicon substrate and a silicon oxide layer (BOX layer) stacked on the silicon substrate. The first opening is a recessed portion that does not penetrate the upper opening of the substrate. The second opening is a recessed portion that does not penetrate the lower opening of the substrate.

[0004] As in patent document 1 Figure 2 As shown, the first and second embedded electrodes are configured in a comb-like shape, intersecting each other when viewed from above. Furthermore, in Patent Document 1, as in Patent Document 1... Figure 3 As shown, the first embedded electrode and the second embedded electrode can also be composed of a circular first embedded electrode disposed in the center when viewed from above, and an annular second embedded electrode and an annular first embedded electrode arranged concentrically with the circular first embedded electrode.

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent No. 6555084. Summary of the Invention

[0008] The problem the invention aims to solve

[0009] The purpose of this invention is to provide a capacitor with a novel structure.

[0010] In addition, the present invention aims to provide a new method for manufacturing a capacitor.

[0011] Technical means for solving problems

[0012] One embodiment of the present invention provides a capacitor comprising: a substrate having a first main surface on one side and a second main surface on the other side; a plurality of first internal electrode forming through-holes penetrating the substrate in the thickness direction; a plurality of second internal electrode forming through-holes penetrating the substrate in the thickness direction; a first internal electrode made of a conductor embedded in the first internal electrode forming through-holes; and a second internal electrode made of a conductor embedded in the second internal electrode forming through-holes, wherein, when viewed from a normal direction orthogonal to the first main surface, the plurality of internal electrode forming through-holes including the plurality of first internal electrode forming through-holes and the plurality of second internal electrode forming through-holes are arranged in a grid pattern. According to this embodiment, a capacitor with a novel structure can be obtained.

[0013] In one embodiment of the invention, in the top view, the plurality of internal electrodes are formed by through-holes arranged in a matrix.

[0014] In one embodiment of the invention, in the top view, the plurality of internal electrodes are formed by through holes arranged in an alternating pattern.

[0015] In one embodiment of the present invention, it includes: a first external electrode disposed on the first main surface and electrically connected to the plurality of first internal electrodes; and a second external electrode disposed on the second main surface and electrically connected to the plurality of second internal electrodes.

[0016] In one embodiment of the present invention, the invention further includes: a first insulating film formed on the first main surface to cover the first main surface end portion of the second internal electrode, having a first contact hole exposing the first main surface end portion of the first internal electrode; and a second insulating film formed on the second main surface to cover the second main surface end portion of the first internal electrode, having a second contact hole exposing the second main surface end portion of the second internal electrode; the first external electrode is formed on the first main surface to cover at least a portion of the exposed surface of the first insulating film and the first main surface end portions of the plurality of first internal electrodes; the second external electrode is formed on the second main surface to cover at least a portion of the exposed surface of the second insulating film and the second main surface end portions of the plurality of second internal electrodes; the first external electrode enters into the first contact hole and is connected to the first internal electrode within the first contact hole; the second external electrode enters into the second contact hole and is connected to the second internal electrode within the second contact hole.

[0017] In one embodiment of the present invention, the aspect ratio of the first internal electrode forming through hole and the second internal electrode forming through hole is 50 or more.

[0018] In one embodiment of the present invention, the depth of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode is 100 μm or more.

[0019] In one embodiment of the present invention, the maximum width or maximum diameter of the cross-section of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode is 0.3 μm or more and 10 μm or less.

[0020] In one embodiment of the present invention, the distance between the electrodes of the plurality of internal electrodes, including the first internal electrode and the second internal electrode, is more than 0.3 μm and less than 10 μm.

[0021] In one embodiment of the present invention, the conductor is composed of any one selected from Cu, Al, Pt, Au, Ag, Ni and polycrystalline silicon.

[0022] One embodiment of the present invention provides a capacitor comprising: a substrate having a first main surface on one side and a second main surface on the other side; a plurality of through holes for forming first internal electrodes penetrating the substrate in a thickness direction; a plurality of through holes for forming second internal electrodes penetrating the substrate in a thickness direction; a first internal electrode made of a conductor embedded in the first internal electrode forming through holes; a second internal electrode made of a conductor embedded in the second internal electrode forming through holes; and a first insulating film formed on the first main surface such that it covers the first main surface end portion of the second internal electrode, having a first insulating layer that exposes the first main surface end portion of the first internal electrode. The device comprises: a contact hole; a second insulating film formed on the second main surface to cover the second main surface end portion of the first internal electrode, having a second contact hole exposing the second main surface end portion of the second internal electrode; a first external electrode formed on the first main surface to cover at least a portion of the exposed surface of the first insulating film and the first main surface end portions of the plurality of first internal electrodes, and electrically connected to the plurality of first internal electrodes; and a second external electrode formed on the second main surface to cover at least a portion of the exposed surface of the second insulating film and the second main surface end portions of the plurality of second internal electrodes, and electrically connected to the plurality of second internal electrodes. According to this embodiment, a capacitor with a novel structure can be obtained.

[0023] In one embodiment of the present invention, the first external electrode enters into the first contact hole and is connected to the first internal electrode within the first contact hole, and the second external electrode enters into the second contact hole and is connected to the second internal electrode within the second contact hole.

[0024] One embodiment of the present invention provides a method for manufacturing a capacitor, comprising: a first step of forming a plurality of first internal electrode through-holes penetrating the substrate in the thickness direction and a plurality of second internal electrode through-holes penetrating the substrate in the thickness direction in a substrate having a first main surface on one side and a second main surface on the other side; and a second step of forming a first internal electrode in the first internal electrode through-holes and a second internal electrode in the second internal electrode through-holes by embedding a conductor in the first internal electrode through-holes and the second internal electrode through-holes. According to this embodiment, a novel method for manufacturing a capacitor can be provided.

[0025] In one embodiment of the present invention, the method further includes: a third step of forming a first insulating layer on the first main surface to cover the first main surface end portions of the first internal electrode and the second internal electrode; a fourth step of forming a first contact hole on the first insulating layer to expose the first main surface end portions of the first internal electrode; a fifth step of forming a second insulating layer on the second main surface to cover the first internal electrode and the second internal electrode; a sixth step of forming a second contact hole on the second insulating layer to expose the second main surface end portions of the second internal electrode; and a seventh step of forming a first external electrode connected to the first internal electrode via the first contact hole on the first insulating film, and forming a second external electrode connected to the second internal electrode via the second contact hole on the second insulating film.

[0026] In one embodiment of the present invention, in the first step, a plurality of internal electrode forming through holes, including a plurality of first internal electrode forming through holes and a plurality of second internal electrode forming through holes, are formed on the substrate in a grid-like manner when viewed from a top view in a normal direction orthogonal to the first main surface.

[0027] In one embodiment of the invention, the plurality of internal electrode forming through holes are formed on the substrate in a matrix configuration when viewed from above.

[0028] In one embodiment of the invention, the plurality of internal electrode forming through holes are formed on the substrate in a staggered manner when viewed from above.

[0029] The above-mentioned or further other objects, features and effects of the present invention will become clear from the following description of the embodiments with reference to the accompanying drawings. Attached Figure Description

[0030] Figure 1This is a schematic plan view of the capacitor according to the first embodiment of the present invention.

[0031] Figure 2 It is along Figure 1 A schematic cross-sectional view of line II-II.

[0032] Figure 3 It is along Figure 2 A schematic cross-sectional view of line III-III.

[0033] Figure 4 It is along Figure 2 A schematic cross-sectional view of line IV-IV.

[0034] Figure 5A It means Figure 1 and Figure 2 The cross-sectional view shown is a part of the manufacturing process of the semiconductor device. Figure 2 The cross-sectional diagram corresponding to the cutting section.

[0035] Figure 5B It means Figure 5A The cross-sectional view of the next process.

[0036] Figure 5C It means Figure 5B The cross-sectional view of the next process.

[0037] Figure 5D It means Figure 5C The cross-sectional view of the next process.

[0038] Figure 5E It means Figure 5D The cross-sectional view of the next process.

[0039] Figure 6 It is a schematic plan view showing a modified example of the cross-sectional shape of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode.

[0040] Figure 7 This is a schematic plan view showing another variation of the cross-sectional shape of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode.

[0041] Figure 8 This is a schematic plan view showing a modified example of the arrangement of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode.

[0042] Figure 9 This is a schematic plan view showing a variation of the arrangement and cross-sectional shape of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode.

[0043] Figure 10This is a schematic plan view showing yet another variation of the arrangement and cross-sectional shape of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode.

[0044] Figure 11 This is a schematic plan view showing yet another variation of the arrangement and cross-sectional shape of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode.

[0045] Figure 12 This is a schematic plan view showing yet another variation of the arrangement and cross-sectional shape of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode.

[0046] Figure 13 This is a schematic plan view showing yet another variation of the arrangement and cross-sectional shape of the through hole for forming the first internal electrode and the through hole for forming the second internal electrode.

[0047] Figure 14 This is a schematic plan view showing the capacitor according to the second embodiment of the present invention.

[0048] Figure 15 It means along Figure 14 A schematic cross-sectional view of the XV-XV line.

[0049] Figure 16 yes Figure 1 and Figure 2 The diagram shows a schematic structural diagram of a semiconductor packaged capacitor. Detailed Implementation

[0050] Figure 1 This is a schematic plan view of the capacitor according to the first embodiment of the present invention. Figure 2 It is along Figure 1 A schematic cross-sectional view of line II-II. Figure 3 It is along Figure 2 A schematic cross-sectional view of line III-III. Figure 4 It is along Figure 2 A schematic cross-sectional view of line IV-IV.

[0051] However, in Figure 1 The middle part is omitted Figure 2 The first insulating film 7 and the first external electrode 8. Additionally, in Figure 1 In order to make the first internal electrode 5 and the second internal electrode 6 easily distinguishable, the first internal electrode 5 is represented by a dotted shading, and the second internal electrode 6 is represented by a cross-shading line.

[0052] The following will Figure 1 The vertical direction is called the longitudinal direction. Figure 1The left and right directions are called the horizontal directions.

[0053] Reference Figure 1 and Figure 2 Capacitor 1 is rectangular in shape. Capacitor 1 includes a substrate 2.

[0054] Substrate 2 is cuboid in shape, including a pair of main surfaces 2a and 2b and four side surfaces 2c. Among the pair of main surfaces 2a and 2b... Figure 2 The top surface 2a is called the "first main surface 2a", and the main surface 2b opposite to the first main surface 2a is called the "second main surface 2b". When viewed from above along a normal direction orthogonal to the first main surface 2a, the substrate 2 is square in shape, with one side length being, for example, 5 mm. The top view shape of the substrate 2 can also be a shape other than a square, such as a rectangle or a circle. Furthermore, the thickness of the substrate 2 is, for example, 100 μm or more, and in this embodiment, for example, 400 μm. In this embodiment, the substrate 2 is formed of silicon oxide (SiO2), which is formed by thermally oxidizing a silicon substrate. Alternatively, the substrate 2 can also be a silicon substrate.

[0055] A plurality of first internal electrode forming through-holes 3 penetrating the substrate 2 in the thickness direction and a plurality of second internal electrode forming through-holes 4 penetrating the substrate 2 in the thickness direction are formed therein. In a top view, the plurality of internal electrode forming through-holes 3 and 4, including the plurality of first internal electrode forming through-holes 3 and the plurality of second internal electrode forming through-holes 4, are arranged in a grid pattern. In this embodiment, in a top view, the plurality of internal electrode forming through-holes 3 and 4 are arranged in a matrix pattern. In this embodiment, in a top view, the plurality of internal electrode forming through-holes 3 and 4 are arranged at equal intervals in both the longitudinal and transverse directions.

[0056] In this embodiment, the cross-sectional shape of each through-hole 3 and 4 for forming internal electrodes is square, with the length of one side being, for example, 0.3 μm or more and 10 μm or less. In this embodiment, the length of one side is, for example, 5 μm. The depth of each through-hole 3 and 4 for forming internal electrodes is the same as the thickness of the substrate 2. The first through-hole 3 and the second through-hole 4 for forming internal electrodes are arranged alternately in the longitudinal and transverse directions, respectively.

[0057] A first internal electrode 5 formed of a conductor is embedded in each of the through holes 3 for forming a first internal electrode. A second internal electrode 6 formed of a conductor is embedded in each of the through holes 4 for forming a second internal electrode. The distance between the multiple internal electrodes 5 and 6, including the first internal electrode 5 and the second internal electrode 6, is between 0.3 μm and 10 μm.

[0058] The first internal electrode 5 is composed of a seed layer 5A formed on the inner surface of the through hole 3 for forming the first internal electrode, and an internal electrode layer 5B embedded in the through hole 3 surrounded by the seed layer 5A. In this embodiment, the seed layer 5A and the internal electrode layer 5B are formed of copper (Cu). The seed layer 5A and the internal electrode layer 5B may also be made of metals such as Al, Pt, Au, Ag, Ni, or polycrystalline silicon.

[0059] The second internal electrode 6 is composed of a seed layer 6A formed on the inner surface of the through-hole 4 for forming the second internal electrode, and an internal electrode layer 6B embedded in the through-hole 4 for forming the second internal electrode, surrounded by the seed layer 6A. In this embodiment, the seed layer 6A and the internal electrode layer 6B are made of copper (Cu). The seed layer 6A and the internal electrode layer 6B may also be made of metals such as Al, Pt, Au, Ag, Ni, or polycrystalline silicon.

[0060] Reference Figure 2 and Figure 3 A first insulating film 7 is formed on the first main surface 2a of the substrate 2, covering the first main surface 2a and the second internal electrode 6. A first contact hole 7a is formed in the first insulating film 7, exposing the first main surface end of the first internal electrode 5. The first insulating film 7 is, for example, made of SiO2 film. The first insulating film 7 may also be made of SiN film, SiON film, etc. In this embodiment, the top view shape of the first contact hole 7a is a square shape with a size approximately equal to the cross-sectional size of the first internal electrode 5. The top view shape of the first contact hole 7a may also be a shape other than a square shape, such as a rectangle or a circle.

[0061] On the first main surface 2a of the substrate 2, a first external electrode 8 is formed such that it covers at least a portion of the exposed surface of the first insulating film 7 and all of the first main surface end portion of the first internal electrode 5. The first external electrode 8 enters into the first contact hole 7a of the first insulating film 7 and is connected to the first main surface end portion of the first internal electrode 5 within the first contact hole 7a. Thus, the first external electrode 8 is electrically connected to the first internal electrode 5. In this embodiment, the exposed surface of the first insulating film 7, excluding the outer surface of the first insulating film 7, is covered by the first external electrode 8.

[0062] The first external electrode 8 comprises a seed layer 8A formed in such a way that it covers the exposed surface of the first insulating film 7 (except for the outer surface) and the exposed surface of the first main surface end of the first internal electrode 5, and an external electrode layer 8B stacked on the seed layer 8A. In this embodiment, the seed layer 8A and the external electrode layer 8B are made of copper (Cu). The seed layer 8A may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu. The external electrode layer 8B may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu.

[0063] Reference Figure 2 and Figure 4 A second insulating film 9 is formed on the second main surface 2b of the substrate 2, covering both the second main surface 2b and the first internal electrode 5. A second contact hole 9a is formed in the second insulating film 9, exposing the second main surface end of the second internal electrode 6. The second insulating film 9 is, for example, made of SiO2 film. It can also be made of SiN film, SiON film, etc. In this embodiment, the top view shape of the second contact hole 9a is a square shape approximately equal in size to the cross-section of the second internal electrode 6. However, the top view shape of the second contact hole 9a can also be a shape other than a square, such as a rectangle or a circle.

[0064] On the second main surface 2b of the substrate 2, a second external electrode 10 is formed such that it covers at least a portion and all of the exposed surface of the second insulating film 9 and the second main surface end portion of the second internal electrode 6. The second external electrode 10 enters into the second contact hole 9a of the second insulating film 9 and is connected to the second main surface end portion of the second internal electrode 6 within the second contact hole 9a. Thus, the second external electrode 10 is electrically connected to the second internal electrode 6. In this embodiment, the exposed surface of the second insulating film 9, excluding the outer surface of the second insulating film 9, is covered by the second external electrode 10.

[0065] The second external electrode 10 consists of a seed layer 10A formed in such a way that it covers the exposed surfaces of the second insulating film 9 (except for the outer surface) and the exposed surfaces of all the second main surface ends of the second internal electrode 6, and an external electrode layer 10B stacked on the seed layer 10A. In this embodiment, the seed layer 10A and the external electrode layer 10B are made of copper (Cu). The seed layer 10A may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu. The external electrode layer 10B may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu.

[0066] In the structure described above, the first internal electrode 5 and the second internal electrode 6, which are adjacent in the longitudinal direction, have opposing faces in the longitudinal direction. Furthermore, the wall of the substrate 2 sandwiched between the opposing faces of the first internal electrode 5 and the second internal electrode 6 in the longitudinal direction constitutes a capacitor film (dielectric film). A capacitor element is constituted by a set of first internal electrodes 5 and second internal electrodes 6 that are adjacent in the longitudinal direction and the capacitor film between them.

[0067] Similarly, the first internal electrode 5 and the second internal electrode 6, which are adjacent in the transverse direction, have opposing faces in the transverse direction. Furthermore, the wall of the substrate 2, sandwiched between the opposing faces of the first internal electrode 5 and the second internal electrode 6, which are adjacent in the transverse direction, constitutes a capacitor film (dielectric film). A capacitor element is constituted by a set of first internal electrodes 5 and second internal electrodes 6 that are adjacent in the transverse direction and the capacitor film between them.

[0068] Furthermore, since multiple first internal electrodes 5 are electrically connected to the first external electrode 8, and multiple second internal electrodes 6 are electrically connected to the second external electrode 10, a structure in which all capacitor elements are connected in parallel can be obtained. Thus, a capacitor capable of both miniaturization and high capacitance can be provided.

[0069] Furthermore, a first internal electrode forming through-hole 3 and a second internal electrode forming through-hole 4 are formed on the substrate 2, and a first internal electrode 5 and a second internal electrode 6 can be formed by embedding a conductor in these internal electrode forming through-holes 3 and 4. Therefore, the manufacturing of the first internal electrode 5 and the second internal electrode 6 is easy. As a result, a capacitor that is easier to manufacture can be provided.

[0070] Figures 5A-5E This is a cross-sectional view used to illustrate an example of the manufacturing process of a capacitor, showing... Figure 2 The corresponding cutting section.

[0071] First, such as Figure 5A As shown, a precursor substrate 40 is prepared as the precursor for substrate 2. The precursor substrate 40 has a first main surface 40a, a second main surface 40b opposite to the first main surface 40a, and four side surfaces 40c connecting the first main surface 40a and the second main surface 40b. The precursor substrate 40 is a silicon substrate. A first internal electrode forming via 3 and a second internal electrode forming via 4 are formed on the precursor substrate 40, for example, using electrochemical etching. These internal electrode forming vias 3 and 4 can also be formed by laser processing.

[0072] Next, as Figure 5BAs shown, the original substrate 40 is integrally formed into a thermally oxidized film using a thermal oxidation method. Thus, the original substrate 40 is formed into a substrate 2 composed of SiO2. The first main surface 40a of the original substrate 40 serves as the first main surface 2a of the substrate 2, the second main surface 40b of the original substrate 40 serves as the second main surface 2b of the substrate 2, and the side surface 40c of the original substrate 40 serves as the side surface 2c of the substrate 2.

[0073] Next, as Figure 5C As shown, while a seed layer 5A is formed on the inner surface of the through-hole 3 for forming the first internal electrode, a seed layer 6A is formed on the inner surface of the through-hole 4 for forming the second internal electrode. Seed layers 5A and 6A are, for example, Cu seed layers. Seed layers 5A and 6A are formed, for example, by atomic layer deposition (ALD).

[0074] Next, as Figure 5D As shown, for example, by plating, an internal electrode layer 5B is formed on a seed layer 5A within a first internal electrode forming through-hole 3, while an internal electrode layer 6B is formed on a seed layer 6A within a second internal electrode forming through-hole 4. The internal electrode layers 5B and 6B are, for example, made of Cu. Thus, a first internal electrode 5, composed of the seed layer 5A and the internal electrode layer 5B, is embedded within the first internal electrode forming through-hole 3. Similarly, a second internal electrode 6, composed of the seed layer 6A and the internal electrode layer 6B, is embedded within the second internal electrode forming through-hole 4.

[0075] Next, as Figure 5E As shown, a first insulating film 7 is formed on the first main surface 2a of the substrate 2, for example, by sputtering to cover the first main surface 2a, the first main surface end portion of the first internal electrode 5, and the first main surface end portion of the second internal electrode 6. The first insulating film 7 can also be formed using chemical vapor deposition (CVD). The first insulating film 7 is, for example, made of a SiO2 film. Furthermore, a first contact hole 7a is formed on the first insulating film 7 by photolithography and etching, exposing the first main surface end portion of the first internal electrode 5.

[0076] Subsequently, a second insulating film 9 is formed on the second main surface 2b of the substrate 2, for example, by sputtering, to cover the second main surface 2b, the second main surface end portion of the first internal electrode 5, and the second main surface end portion of the second internal electrode 6. The second insulating film 9 can also be formed using CVD. The second insulating film 9 is, for example, composed of a SiO2 film. Furthermore, a second contact hole 9a is formed on the second insulating film 9 by photolithography and etching, exposing the second main surface end portion of the second internal electrode 6.

[0077] Finally, by forming a first external electrode 8 on the first main surface 2a of the substrate 2 and a second external electrode 10 on the second main surface 2b of the substrate 2, the following is obtained: Figure 1 and Figure 2 The capacitor 1 shown is shown in the figure.

[0078] The first external electrode 8 is formed, for example, as described below. First, a seed layer 8A is formed, for example, by sputtering, in a manner that covers the exposed surfaces of the first insulating film 7 (except for the outer surface) and all the exposed surfaces of the first main surface ends of the first internal electrodes 5. Then, for example, an external electrode layer 8B is formed on the seed layer 8A by plating. Thus, a first external electrode 8, consisting of the seed layer 8A and the external electrode layer 8B, and electrically connected to all the first internal electrodes 5, is formed on the first main surface 2a.

[0079] The second external electrode 10 is formed, for example, as described below. First, a seed layer 10A is formed, for example, by sputtering, in a manner that covers the exposed surfaces of the second insulating film 9 (except for the outer surface) and all the exposed surfaces of the second main surface ends of the second internal electrodes 6. Then, for example, an external electrode layer 10B is formed on the seed layer 10A by plating. Thus, a second external electrode 10, consisting of the seed layer 10A and the external electrode layer 10B, and electrically connected to all the second internal electrodes 6, is formed on the second main surface 2b.

[0080] Figures 6-13 These are plan views showing the cross-sectional shapes of the through-hole 3 for forming the first internal electrode and the through-hole 4 for forming the second internal electrode, and variations of one or both of their arrangements. Figure 1 The corresponding floor plan. Figures 6-13 In the middle, in with Figure 1 Corresponding annotations and Figure 1 The same reference numerals are used to indicate them.

[0081] like Figure 6 As shown, the cross-sectional shape of the through hole 3 for forming the first internal electrode and the through hole 4 for forming the second internal electrode can also be circular. In this case, the cross-sectional shape of the first internal electrode 5 embedded in the through hole 3 for forming the first internal electrode and the second internal electrode 6 embedded in the through hole 4 for forming the second internal electrode also becomes circular.

[0082] In addition, such as Figure 7 As shown, the cross-sectional shape of the through hole 3 for forming the first internal electrode and the through hole 4 for forming the second internal electrode can also be a regular hexagon. In this case, the cross-sectional shape of the first internal electrode 5 embedded in the through hole 3 for forming the first internal electrode and the second internal electrode 6 embedded in the through hole 4 for forming the second internal electrode also becomes a regular hexagon.

[0083] In addition, such as Figures 8-12 As shown, the multiple through holes 3 and 4 for forming internal electrodes, which include multiple first internal electrode forming through holes 3 and multiple second internal electrode forming through holes 4, can also be arranged in an alternating pattern when viewed from above.

[0084] exist Figure 8 In the example, the cross-sectional shape of each internal electrode is formed by through holes 3 and 4 and... Figure 1 It is also square in shape. Figure 8 In the example, the first internal electrode forming through-hole 3 and the second internal electrode forming through-hole 4 are arranged alternately only in the transverse direction. Figure 9 In the example, the cross-sectional shape of the through holes 3 and 4 formed by the internal electrodes is circular.

[0085] exist Figures 10-12 In the example, the cross-sectional shape of the through holes 3 and 4 forming the internal electrodes is a regular hexagon. Figures 10-12 In the diagram, the horizontal arrangement of the internal electrodes formed by the through holes 3 and 4 is designated as a row, and the vertical arrangement of the internal electrodes formed by the through holes 3 and 4 is designated as a column. The bottom and top sides of each row are referred to as the first row, the second row, the third row, ..., the Nth row.

[0086] Figure 10 and Figure 11 In the example, the left edge of the even-numbered rows is shifted to the left relative to the left edge of the odd-numbered rows. Figure 10 and Figure 11 In the middle, in each row, the through holes 3 for forming the first internal electrode and the through holes 4 for forming the second internal electrode are alternately arranged in the transverse direction. However, in Figure 10 In the middle, in each row, the first internal electrode is formed by a through hole 3 disposed at the left end.

[0087] In contrast, Figure 11 In the middle, at the left end of the odd-numbered rows, the first internal electrode forming through hole 3 and the second internal electrode forming through hole 4 are alternately arranged in the longitudinal direction, and at the left end of the even-numbered rows, the first internal electrode forming through hole 3 and the second internal electrode forming through hole 4 are alternately arranged in the longitudinal direction.

[0088] exist Figure 12 In the example, the third through-hole from the left in the sixth row is the second through-hole 4 for forming an internal electrode. This second through-hole 4 for forming an internal electrode is taken as the basic through-hole 4. Figure 12 When represented by 4 (P), the first internal electrode forming through hole 3 and the second internal electrode forming through hole 4 are alternately arranged in a generally annular or generally arc-shaped manner centered on the basic through hole 4.

[0089] exist Figure 13 In the middle, the cross-sectional shape of the through holes 3 and 4 used to form the internal electrodes is circular. Their overall arrangement when viewed from above is similar to... Figure 1 Both are matrix-shaped. However, the arrangement of the through-hole 3 for forming the first internal electrode and the through-hole 4 for forming the second internal electrode is different from that of the others. Figure 1 Different. Figure 13 In the middle, the horizontal arrangement of the internal electrodes formed by the through holes 3 and 4 is taken as a row, the vertical arrangement of the internal electrodes formed by the through holes 3 and 4 is taken as a column, and each column is taken from left to right as the first column, the second column, the third column, ..., the sixth column, and each row is taken from bottom to top as the first row, the second row, the third row, ..., the sixth row.

[0090] The first and fourth columns are entirely formed by through-holes 3 for forming the first internal electrode. The third and sixth columns are entirely formed by through-holes 4 for forming the second internal electrode. In the second column, the third and fifth rows are formed by through-holes 3 for forming the first internal electrode, and the first, second, fourth, and sixth rows are formed by through-holes 4 for forming the second internal electrode. In the fifth column, the second and fourth rows are formed by through-holes 3 for forming the first internal electrode, and the first, third, fifth, and sixth rows are formed by through-holes 4 for forming the second internal electrode.

[0091] Figure 14 This is a schematic plan view of the capacitor according to the second embodiment of the present invention. Figure 15 It is along Figure 14 A schematic cross-sectional view of the XV-XV line. However, in Figure 14 The middle part is omitted Figure 15 The first insulating film 7 and the main first external electrode 81. Additionally, in Figure 14 In order to easily identify the first internal electrode 5 and the second internal electrode 6, the first internal electrode 5 is represented by a dotted shaded area, and the second internal electrode 6 is represented by a cross-shaded area.

[0092] exist Figure 14 In China, for the sake of Figure 1 The corresponding part labels and Figure 1 The same reference numerals are used to indicate them. Figure 15 In China, for the sake of Figure 2 The corresponding parts of each part are marked with the same meaning. Figure 2 The same reference numerals are used to indicate them.

[0093] In the following, Figure 14 Taking the vertical direction as the longitudinal direction, Figure 14 The left and right directions are taken as the horizontal direction.

[0094] Capacitor 1A is rectangular parallelepiped in shape. Capacitor 1A includes substrate 2.

[0095] Substrate 2 is cuboid in shape, comprising a pair of main surfaces 2a and 2b and four side surfaces 2c. Among the pair of main surfaces 2a and 2b... Figure 15 The top surface 2a is designated as the "first main surface 2a", and the opposite surface 2b is designated as the "second main surface 2b". Viewed from above along a normal direction orthogonal to the first main surface 2a, the substrate 2 is rectangular in shape, with a long side length of, for example, 10 mm and a short side length of, for example, 5 mm. Furthermore, the thickness of the substrate 2 is, for example, 100 μm or more, and in this embodiment, for example, 400 μm. In this embodiment, the substrate 2 is made of silicon oxide (SiO2), formed by thermally oxidizing a silicon substrate. Alternatively, the substrate 2 may also be a silicon substrate.

[0096] A plurality of through-holes 3 for forming first internal electrodes, a plurality of through-holes 4 for forming second internal electrodes, and a plurality of through-holes 21 for connecting external electrodes are formed in the substrate 2, extending through the substrate 2 in the thickness direction. In top view, the plurality of through-holes 3 and 4 for forming internal electrodes, including the plurality of first internal electrode through-holes 3 and the plurality of second internal electrode through-holes 4, are arranged in a matrix. In this embodiment, in top view, the plurality of through-holes 3 and 4 for forming internal electrodes are arranged at equal intervals in both the longitudinal and transverse directions.

[0097] When viewed from above, the through holes 21 for connecting multiple external electrodes are located on one side of the through holes 3, 4 for forming multiple internal electrodes arranged in a matrix (in this example, ...). Figure 14 The through holes (on the left side) are arranged in a vertical direction. In this embodiment, the through holes 3, 4, and 21, including a plurality of first internal electrode forming through holes 3, a plurality of second internal electrode forming through holes 4, and a plurality of external electrode connecting through holes 21, are arranged in a matrix. In this embodiment, when viewed from above, the plurality of through holes 3, 4, and 21 are arranged at equal intervals in both the vertical and horizontal directions.

[0098] In this embodiment, the cross-sectional shape of each through hole 3, 4, and 21 is square, with the length of one side being, for example, 0.3 μm or more and 10 μm or less. In this embodiment, the length of the aforementioned one side is, for example, 5 μm.

[0099] The first internal electrode forming through hole 3 and the second internal electrode forming through hole 4 are arranged alternately in the longitudinal and transverse directions, respectively.

[0100] On the second main surface 2b of substrate 2, when viewed from above, the region to the right of the imaginary vertical line L1 formed by the left end of the through holes 3 and 4 through the internal electrodes is designated as the first region S1. Furthermore, on the second main surface 2b of substrate 2, when viewed from above, the region to the left of the imaginary vertical line L2 formed by the right end of the through hole 21 through the external electrodes is designated as the second region S2.

[0101] A first internal electrode 5, made of a conductor, is embedded in each of the through holes 3 for forming the first internal electrode. A second internal electrode 6, made of a conductor, is embedded in each of the through holes 4 for forming the second internal electrode. An external electrode connection component 22, made of a conductor, is embedded in the through hole 21 for connecting the external electrode. The distance between the multiple internal electrodes 5 and 6, including the first internal electrode 5 and the second internal electrode 6, is between 0.3 μm and 10 μm.

[0102] The first internal electrode 5 is composed of a seed layer 5A formed on the inner surface of the through hole 3 for forming the first internal electrode, and an internal electrode layer 5B embedded in the through hole 3 surrounded by the seed layer 5A. In this embodiment, the seed layer 5A and the internal electrode layer 5B are made of copper (Cu). The seed layer 5A and the internal electrode layer 5B may also be made of metals such as Al, Pt, Au, Ag, Ni, or polycrystalline silicon.

[0103] The second internal electrode 6 is composed of a seed layer 6A formed on the inner surface of the through-hole 4 for forming the second internal electrode, and an internal electrode layer 6B embedded in the through-hole 4 for forming the second internal electrode, surrounded by the seed layer 6A. In this embodiment, the seed layer 6A and the internal electrode layer 6B are made of copper (Cu). The seed layer 6A and the internal electrode layer 6B may also be made of metals such as Al, Pt, Au, Ag, Ni, or polycrystalline silicon.

[0104] The external electrode connection component 22 comprises a seed layer 22A formed on the inner surface of the external electrode connection through hole 21, and an external electrode connection layer 22B embedded in the external electrode connection through hole 21, surrounded by the seed layer 22A. In this embodiment, the seed layer 22A and the external electrode connection layer 22B are made of copper (Cu). The seed layer 22A and the external electrode connection layer 22B may also be made of metals such as Al, Pt, Au, Ag, Ni, or polycrystalline silicon.

[0105] A first insulating film 7 is formed on the first main surface 2a of the substrate 2, covering the first main surface 2a and the second internal electrode 6. A first contact hole 7a is formed on the first insulating film 7, exposing the first main surface end of the first internal electrode 5, and a third contact hole 7b is formed, exposing the first main surface end of the external electrode connection member 22. The first insulating film 7 is, for example, made of a SiO2 film. The first insulating film 7 may also be made of a SiN film, a SiON film, or the like. In this embodiment, the top view shapes of the first contact hole 7a and the third contact hole 7b are square shapes, each approximately equal in size to the cross-sectional area of ​​the first internal electrode 5 and the external electrode connection member 22.

[0106] On the first main surface 2a of the substrate 2, a main first external electrode 81 is formed such that it covers at least a portion and all of the first main surface end portion of the first internal electrode 5 of the exposed surface of the first insulating film 7. The main first external electrode 81 enters into the first contact hole 7a of the first insulating film 7 and is connected to the first main surface end portion of the first internal electrode 5 within the first contact hole 7a. Thus, the main first external electrode 81 is electrically connected to the first internal electrode 5. In this embodiment, the exposed surface of the first insulating film 7, excluding the outer surface of the first insulating film 7, is covered by the main first external electrode 81.

[0107] Furthermore, the main first external electrode 81 enters the third contact hole 7b and connects to the first main surface end of the external electrode connecting member 22 within the third contact hole 7b. Thus, the main first external electrode 81 is electrically connected to the external electrode connecting member 22.

[0108] The main first external electrode 81 is composed of a seed layer 81A formed in such a way that it covers the exposed surface of the first insulating film 7 (except for the outer surface), the exposed surfaces of all the first main surface ends of the first internal electrodes 5, and all the first main surface ends of the external electrode connecting members 22, and an external electrode layer 81B stacked on the seed layer 81A. In this embodiment, the seed layer 81A and the external electrode layer 81B are made of copper (Cu). The seed layer 81A may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu. The external electrode layer 81B may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu.

[0109] A second insulating film 9 is formed on the second main surface 2b of the substrate 2, covering the second main surface 2b and the first internal electrode 5. The second insulating film 9 has a second contact hole 9a exposing the second main surface side end of the second internal electrode 6 and a fourth contact hole 9b exposing the second main surface side end of the external electrode connection member 22. The second insulating film 9 is, for example, made of a SiO2 film. The second insulating film 9 may also be made of a SiN film, a SiON film, or the like. In this embodiment, the top view shapes of the second contact hole 9a and the fourth contact hole 9b are square shapes, each approximately equal in size to the cross-sectional area of ​​the second internal electrode 6 and the external electrode connection member 22.

[0110] On the second main surface 2b of the substrate 2, in the first region S1, a second external electrode 10 is formed such that it covers at least a portion of the exposed surface of the second insulating film 9 and the second main surface end portion of the second internal electrode 6. The second external electrode 10 enters into the second contact hole 9a of the second insulating film 9 and is connected to the second main surface end portion of the second internal electrode 6 within the second contact hole 9a. Thus, the second external electrode 10 is electrically connected to the second internal electrode 6. In this embodiment, in the first region S1, the exposed surface of the second insulating film 9, excluding the outer surface of the second insulating film 9, is covered by the second external electrode 10.

[0111] The second external electrode 10 consists of a seed layer 10A formed in the first region S1, covering the exposed surface of the second insulating film 9 (except for the outer surface) and the exposed surface of the second main surface end of the second internal electrode 6, and an external electrode layer 10B stacked on the seed layer 10A. In this embodiment, the seed layer 10A and the external electrode layer 10B are made of copper (Cu). The seed layer 10A may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu. The external electrode layer 10B may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu.

[0112] Furthermore, on the second main surface 2b of the substrate 2, a secondary first external electrode 82 is formed in the second region S2 in such a way that it covers at least a portion and all of the second main surface end portion of the external electrode connection member 22. The secondary first external electrode 82 enters into the fourth contact hole 9b of the second insulating film 9 and is connected to the second main surface end portion of the external electrode connection member 22 within the fourth contact hole 9b. Thus, the secondary first external electrode 82 is electrically connected to the external electrode connection member 22. In this embodiment, in the second region S2, the exposed surface of the second insulating film 9, excluding the outer surface of the second insulating film 9, is covered by the secondary first external electrode 82.

[0113] Therefore, the secondary first external electrode 82 is electrically connected to the main first external electrode 81 via the external electrode connection member 22. That is, in this embodiment, the main first external electrode 81 and the secondary first external electrode 82 constitute the first external electrode 80. In other words, the first external electrode 80 includes the main first external electrode 81 formed on the first main surface 2a side of the substrate 2 and the secondary first external electrode 82 formed on the second main surface 2b side of the substrate 2.

[0114] The secondary first external electrode 82 is composed of a seed layer 82A formed in the second region S2, covering the exposed surface of the second insulating film 9 (except for the outer surface) and the exposed surface of the second main surface end of the external electrode connection member 22, and an external electrode layer 82B stacked on the seed layer 82A. In this embodiment, the seed layer 82A and the external electrode layer 82B are made of copper (Cu). The seed layer 82A may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu. The external electrode layer 82B may also be made of Al, Pt, Au, Ag, Ni, etc., in addition to Cu.

[0115] In this embodiment, the first external electrode 80 includes a main first external electrode 81 formed on the first main surface 2a side of the substrate 2 and a secondary first external electrode 82 formed on the second main surface 2b side of the substrate 2. Therefore, wiring for connecting to the first external electrode 80 can be connected to the main first external electrode 81 on the first main surface 2a side of the substrate 2, and to the secondary first external electrode 82 on the second main surface 2b side of the substrate 2. Alternatively, the second external electrode 10 and the secondary first external electrode 82 can be directly bonded to the wiring pattern on the printed substrate.

[0116] Figure 16 yes Figure 1 and Figure 2 The diagram shows a schematic structure of a semiconductor package in which the capacitor 1 is encapsulated.

[0117] The semiconductor package 101 includes a flat, rectangular resin package 102 and a first terminal 103 and a second terminal 104 sealed by the resin package 102.

[0118] Two terminals 103 and 104 are formed from metal plates of a predetermined shape. In this embodiment, the second terminal 104 is formed to include a square-shaped pad 105 and an elongated rectangular terminal portion 106 extending linearly from one side of the pad 105. The first terminal 103 is formed to have a substantially the same shape as the terminal portion 106 of the second terminal 104, and is arranged parallel to the terminal portion 106 of the second terminal 104.

[0119] A capacitor 1 is chip-bonded to the second terminal 104 (the central portion of the pad 105). The pad 105 is bonded from below to the second external electrode 10 of the capacitor 1.

[0120] The first terminal 103 is connected to the first external electrode 8 of the capacitor 1 via a bonding wire 107.

[0121] The first and second embodiments of the present invention have been described above, and the present invention can be further implemented in other ways. For example, the cross-sectional shapes of the through hole 3 for forming the first internal electrode and the through hole 4 for forming the second internal electrode are not limited to the shapes described above, and can be any shapes. The cross-sectional shape of the through hole 3 for forming the first internal electrode and the through hole 4 for forming the second internal electrode can also be, for example, a rectangular shape with an elongated direction. In this case, the first internal electrode 5 and the second internal electrode 6 become flat plates.

[0122] Furthermore, in the above embodiments, the multiple through holes 3 and 4 for forming internal electrodes, including multiple first internal electrode forming through holes 3 and multiple second internal electrode forming through holes 4, are arranged in a grid pattern (matrix pattern, staggered pattern), but they may not be arranged in a grid pattern. For example, they may also be arranged in a row.

[0123] The embodiments of the present invention have been described in detail, but these are merely specific examples used to clarify the technical content of the present invention. The present invention should not be limited to these specific examples for interpretation, and the scope of the present invention is limited only by the scope of the additional technical solutions.

[0124] This application corresponds to Japan Patent Office No. 2020-043084, filed on March 12, 2020, the entire contents of which are incorporated herein by reference.

[0125] Explanation of reference numerals in the attached figures

[0126] 1. 1A capacitor

[0127] 2 Substrate

[0128] 2a First Main Face

[0129] 2b Second Main Face

[0130] 3 Through-hole for forming the first internal electrode

[0131] 4. Through-hole for forming the second internal electrode

[0132] 5 First internal electrode

[0133] 5A Seed Layer

[0134] 5B Internal Electrode Layer

[0135] 6 Second internal electrode

[0136] 6A Seed Layer

[0137] 6B Internal Electrode Layer

[0138] 7 First insulating film

[0139] 7a First contact hole

[0140] 7b Third contact hole

[0141] 8 First external electrode

[0142] 8A Seed Layer

[0143] 8B External Electrode Layer

[0144] 9 Second insulating film

[0145] 9a Second contact hole

[0146] 9b Fourth contact hole

[0147] 10 Second external electrode

[0148] 10A Seed Layer

[0149] 10B External Electrode Layer

[0150] 21 Through hole for external electrode connection

[0151] 22 External electrode connection components

[0152] 22A Seed Layer

[0153] 22B External Electrode Connection Layer

[0154] 40 original substrate

[0155] 81 Main First External Electrode

[0156] 81A Seed Layer

[0157] 81B External Electrode Layer

[0158] 82 pairs of first external electrodes

[0159] 82A Seed Layer

[0160] 82B External electrode layer.

Claims

1. A capacitor, characterized in that, include: A substrate having a first main surface on one side and a second main surface on the other side; A plurality of first internal electrode forming through holes are formed in a first region of the substrate, which penetrate the substrate in the thickness direction and have equal cross-sectional areas. A plurality of through holes for forming second internal electrodes are formed in the first region, which penetrate the substrate in the thickness direction and have equal cross-sectional areas. A plurality of through holes for connecting external electrodes are formed in a second region of the substrate, which is different from the first region, and which penetrate the substrate in the thickness direction and have equal cross-sectional areas. A first internal electrode made of a conductor is embedded in a through hole for forming the first internal electrode. A second internal electrode made of a conductor is embedded in a through hole for forming the second internal electrode. An external electrode connection component made of a conductor, embedded in the through hole for external electrode connection; A first insulating film is formed on the first main surface in such a way that it covers the end of the first main surface side of the second internal electrode, and has a first contact hole that exposes the end of the first main surface side of the first internal electrode, and a third contact hole that exposes the end of the first main surface side of the external electrode connecting member. The second insulating film is formed on the second main surface in such a way that it covers the end of the second main surface of the first internal electrode, and has a second contact hole that exposes the end of the second main surface of the second internal electrode, and a fourth contact hole that exposes the end of the second main surface of the external electrode connecting member. A first external electrode is formed on the first main surface in such a way that it covers the end of the first main surface of the plurality of first internal electrodes and the end of the first main surface of the external electrode connecting member, and is electrically connected to the plurality of first internal electrodes and the plurality of external electrode connecting members. A second external electrode is formed on the second main surface in such a way that it covers the end of the second main surface side of the plurality of second internal electrodes, and is electrically connected to the plurality of second internal electrodes. and A secondary first external electrode is formed on the second main surface such that it covers the end of the plurality of external electrode connecting components on the second main surface side, and is electrically connected to the plurality of external electrode connecting components. The plurality of through holes for forming first internal electrodes, the plurality of through holes for forming second internal electrodes, and the plurality of through holes for connecting external electrodes satisfy the following first condition, second condition, third condition, and fourth condition: First condition: The area of ​​the cross-section of the through hole for forming the first internal electrode, the area of ​​the cross-section of the through hole for forming the second internal electrode, and the area of ​​the cross-section of the through hole for connecting the external electrode are equal. Second condition: The plurality of through holes, which are formed by the plurality of through holes for forming the plurality of first internal electrodes, the plurality of through holes for forming the plurality of second internal electrodes, and the plurality of through holes for connecting the plurality of external electrodes, are arranged in a matrix in a way that, when viewed from above, they are arranged in a predetermined first direction parallel to the first main surface and in a second direction that is parallel to the first main surface and orthogonal to the first direction. Third condition: The through hole for forming the first internal electrode and the through hole for forming the second internal electrode are alternately arranged in the first direction and also alternately arranged in the second direction; as well as Fourth condition: The plurality of external electrode connection through holes are arranged in a row at intervals in the second region in the first direction, and one of them is arranged in the second direction on the extension line of each row of alternating rows of the first internal electrode forming through holes and the second internal electrode forming through holes.

2. The capacitor as claimed in claim 1, characterized in that: The main first external electrode enters the first contact hole, connects with the first internal electrode within the first contact hole, and then enters the third contact hole, where it connects with the external electrode connection component. The second external electrode enters the second contact hole and connects with the second internal electrode within the second contact hole. The secondary first external electrode enters the fourth contact hole and is connected to the external electrode connection component within the fourth contact hole.

3. The capacitor as claimed in claim 1, characterized in that: The aspect ratio of the first internal electrode forming through hole and the second internal electrode forming through hole is 50 or more.

4. The capacitor as claimed in claim 1, characterized in that: The depth of the through hole for forming the first internal electrode, the through hole for forming the second internal electrode, and the through hole for connecting the external electrode is 100 μm or more.

5. The capacitor as described in claim 4, characterized in that: The maximum width or maximum diameter of the cross-section of the through hole for forming the first internal electrode, the through hole for forming the second internal electrode, and the through hole for connecting the external electrode is 0.3 μm or more and 10 μm or less.

6. The capacitor as claimed in claim 4, characterized in that: The distance between the multiple internal electrodes, including the first internal electrode and the second internal electrode, is greater than 0.3 μm and less than 10 μm.

7. The capacitor as claimed in claim 1, characterized in that: The conductor is composed of any one of Cu, Al, Pt, Au, Ag, Ni and polycrystalline silicon.

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