Semiconductor package structure and method of manufacturing the same

Abstract

A semiconductor package structure and its manufacturing method are disclosed, comprising a lead frame, a molding compound, and a repair structure. The contact surface between the molding compound and the lead frame forms a first heterogeneous material interface. The repair structure is at least disposed at the first heterogeneous material interface and includes a shell and contents. The shell remains intact under uniform stress and cracks under non-uniform stress to release the contents. The manufacturing method includes: providing a lead frame; injecting flowing molding compound into the lead frame, driving at least a portion of the repair structure to aggregate at the first heterogeneous material interface; and curing the flowing molding compound, wherein at least a portion of the repair structure is distributed at the first heterogeneous material interface after curing. Using the technical solution of this application, crack propagation can be suppressed after delamination or cracking occurs within the semiconductor package structure, improving the long-term reliability of the package structure.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and in particular to a semiconductor packaging structure and its manufacturing method. Background Technology

[0002] In semiconductor packaging structures, due to factors such as mismatched coefficients of thermal expansion, differences in elastic modulus, and geometric discontinuities between the lead frame and the molding compound, localized stress concentrations (i.e., thermo-mechanical stress) can easily form at the interface during product service (such as under temperature cycling or mechanical loads), inevitably inducing interface delamination and cracking. Especially in applications such as high-voltage isolation devices and power modules, interface delamination and cracking can severely affect the insulation performance, mechanical integrity, and long-term operational reliability of components.

[0003] To improve the reliability of the encapsulation interface, existing technologies mainly focus on material modification, interface strengthening, or adhesion enhancement. For example, optimizing the composition of the molding compound, adding coupling agents, and roughening the lead frame surface can improve the interfacial bonding strength. However, improving the interfacial bonding strength cannot completely eliminate delamination and cracking. Once delamination or cracking occurs at the interface, it often continues to propagate, and may even accelerate in the later stages, seriously affecting device reliability. Summary of the Invention

[0004] To address the aforementioned technical problems, embodiments of the present invention provide a semiconductor packaging structure. By setting a repair structure at the interface of the lead frame and the first heterogeneous material of the molding compound, the structure can suppress crack propagation after delamination or cracking occurs, thereby improving the long-term reliability of the packaging structure.

[0005] In a first aspect, the present invention provides a semiconductor packaging structure, comprising: a lead frame; a molding compound covering at least a portion of the lead frame, wherein the contact surface between the molding compound and the lead frame forms a first heterogeneous material interface; and a repair structure disposed at least at the first heterogeneous material interface, the repair structure comprising: a housing; and contents encapsulated within the housing; wherein the housing remains intact under uniform stress and ruptures under non-uniform stress to release the contents.

[0006] Optionally, the non-uniform stress includes shear stress, tensile stress, or a combination thereof generated when delamination or cracking occurs at the interface of the first heterogeneous material.

[0007] Optionally, the housing has a stress-sensitive region, and under non-uniform stress, the stress-sensitive region of the housing breaks preferentially over other regions outside the stress-sensitive region of the housing.

[0008] Optionally, the stress-sensitive region includes an embrittlement region, the fracture toughness of which is lower than that of other regions of the shell outside the embrittlement region.

[0009] Optionally, the stress-sensitive region includes a thinned region, the average wall thickness of which is less than that of other regions of the shell outside the thinned region.

[0010] Optionally, the thinning region includes a fracture-inducing structure, which is a notch, a notch, or an indentation.

[0011] Optionally, the stress-sensitive region is distributed in a ring or elongated shape on the shell.

[0012] Optionally, the repair structure includes at least a first repair structure and a second repair structure, wherein the fracture stress threshold of the first repair structure is greater than the fracture stress threshold of the second repair structure, and the fracture stress threshold refers to the minimum non-uniform stress at which the shell of the repair structure fractures.

[0013] Optionally, the repair structure is arranged along a preset crack propagation path, the preset crack propagation path including a starting region, an extension region and an ending region connected in sequence, the first repair structure is disposed in the starting region of the preset crack propagation path, and the second repair structure is disposed in the extension region and / or the ending region of the preset crack propagation path.

[0014] Optionally, the repair structure is distributed in a strip shape at the interface of the first heterogeneous material.

[0015] Optionally, the distribution density of the repair structure varies with the stress magnitude at the interface of the first heterogeneous material, with the distribution density in the region of higher stress being higher than that in the region of lower stress.

[0016] Optionally, within the first heterogeneous material interface, the distribution density of the repair structure in the region corresponding to the geometric corner of the lead frame is greater than the distribution density in the region corresponding to the straight portion of the lead frame.

[0017] Optionally, the lead frame is provided with a chip module and a wire electrically connected to the chip module, and the repair structure is further provided with at least one of the following: a second heterogeneous material interface, the second heterogeneous material interface being the contact surface between the molding compound and the chip module; a third heterogeneous material interface, the third heterogeneous material interface being the contact surface between the molding compound and the wire; wherein, the distribution density of the repair structure at the first heterogeneous material interface is greater than the distribution density of the repair structure at the second heterogeneous material interface, and the distribution density of the repair structure at the second heterogeneous material interface is greater than the distribution density of the repair structure at the third heterogeneous material interface.

[0018] Optionally, the shell may be spherical, ellipsoidal, or hemispherical-cylindrical.

[0019] Optionally, the housing is made of an insulating material doped with dielectric particles, conductive particles, or magnetic particles.

[0020] In a second aspect, the present invention provides a method for manufacturing a semiconductor package structure, comprising: providing a lead frame; injecting a flowing encapsulant into the lead frame, the encapsulant covering at least a portion of the lead frame and forming a first heterogeneous material interface with the contact surface of the lead frame, the flowing encapsulant containing a pre-mixed repair structure, the repair structure comprising: a shell and contents, the contents being encapsulated within the shell; driving at least a portion of the repair structure to aggregate at the first heterogeneous material interface; curing the flowing encapsulant, the at least a portion of the repair structure being distributed at the first heterogeneous material interface after curing; wherein the shell remains intact under uniform stress and ruptures under non-uniform stress to release the contents.

[0021] Optionally, the method of assembling the repair structure at the first heterogeneous material interface includes: before the flowing encapsulant solidifies, subjecting the mold of the encapsulant to static treatment, with the lead frame located at the bottom in the direction of gravity, causing the repair structure to settle towards the first heterogeneous material interface, wherein the density of the repair structure is greater than the density of the flowing encapsulant; or, subjecting the mold of the encapsulant to centrifugation treatment, causing the repair structure to move to the first heterogeneous material interface under centrifugal force.

[0022] Thirdly, the present invention provides another manufacturing method, comprising: providing a lead frame; providing a repair structure on the lead frame, the repair structure comprising: a shell and contents, the contents being encapsulated within the shell; injecting a flowing encapsulant into the lead frame, the encapsulant covering at least a portion of the lead frame and forming a first heterogeneous material interface with the contact surface of the lead frame; curing the flowing encapsulant, the repair structure being distributed at the first heterogeneous material interface after curing; wherein the shell remains intact under uniform stress and ruptures under non-uniform stress to release the contents.

[0023] Optionally, the method of setting the repair structure on the lead frame includes one or more combinations of the following: printing, dispensing, spraying, and pre-embedding.

[0024] Optionally, the housing is made of an insulating material doped with dielectric particles, conductive particles, or magnetic particles. Before the injected flowing encapsulant is introduced into the lead frame, the method further includes: applying a directional electric field or magnetic field to the repair structure so that the repair structure is arranged in a preset direction.

[0025] Compared with the prior art, the present invention has the following beneficial effects: This invention provides a repair structure at the interface between the lead frame and the molding compound (hereinafter referred to as the "first interface"), whereby the shell of the repair structure remains intact under uniform compressive stress, preventing unexpected breakage during the manufacturing process. When delamination or cracks occur at the interface, the resulting non-uniform stress (e.g., shear stress or tensile stress) causes the shell to rupture, releasing the internal contents. The contents fill the delaminated interface or cracks, altering the stress concentration at the delamination slits or crack tips, thus delaying or preventing further delamination or crack propagation.

[0026] Furthermore, the repair structure is also located at the second heterogeneous material interface (i.e., the contact surface between the molding compound and the chip module) and the third heterogeneous material interface (i.e., the contact surface between the molding compound and the conductive wire), with the distribution density satisfying that the first heterogeneous material interface is greater than the second heterogeneous material interface, and the second heterogeneous material interface is greater than the third heterogeneous material interface. Based on the actual thermo-mechanical stress levels of different heterogeneous material interfaces (specifically, the difference between the lead frame and the molding compound is the greatest, resulting in the highest stress; the chip module is next; and the conductive wire, due to its small diameter, can locally deform to release stress, resulting in the lowest stress), the distribution density of the repair structure is matched to the stress magnitude variation. This ensures sufficient repair capability in areas with high stress while avoiding waste caused by over-configuration in areas with low stress, achieving optimized allocation of the repair structure across the entire package.

[0027] Furthermore, by doping the shell material with dielectric, conductive, or magnetic particles and oriented the repair structure using an applied electric or magnetic field, the stress-sensitive region can be directed towards the interface of the first heterogeneous material, i.e., the direction from which the expected non-uniform stress originates. This allows the shell to withstand non-uniform stress in a more sensitive stress-bearing posture when interface delamination occurs, improving the consistency and reliability of triggering. This elevates the repair structure from "probabilistic triggering" to "deterministic triggering," making it particularly suitable for automotive-grade and industrial-grade semiconductor packaging products with high repair precision requirements. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of a first heterogeneous material interface according to an embodiment of the present invention; Figure 2 This is a schematic diagram of a repair structure according to an embodiment of the present invention; Figure 3 This is a schematic diagram of a semiconductor packaging structure according to an embodiment of the present invention; Figure 4 This is a schematic diagram of another semiconductor packaging structure according to an embodiment of the present invention; Figure 5This is a flowchart illustrating a method for manufacturing a semiconductor packaging structure according to an embodiment of the present invention; Figure 6 This is a flowchart of a method for manufacturing another semiconductor packaging structure according to an embodiment of the present invention. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be clearly and completely described below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0030] As mentioned in the background section, existing solutions all focus on improving initial strength. While these can reduce the probability of interface delamination or cracking to some extent, they cannot solve the problems of interface delamination, crack propagation, and exacerbation after they occur. The reason for this is that existing solutions are based on a "prevention" approach, aiming to prevent interface delamination as much as possible through overall reinforcement, rather than intervening after delamination has occurred. However, the stress distribution at the interface of a real-world package is non-uniform, and damage to areas subjected to high stress (such as heterogeneous material interfaces and geometric corners) is inevitable. Once a microcrack initiates, the stress concentration at the crack tip drives the crack to propagate continuously, a situation that conventional reinforcement designs cannot prevent.

[0031] To address this technical problem, the inventors further analyzed the issue and found that the key to the solution lies in the ability to intervene in the delamination or crack propagation behavior even after interface delamination occurs. Specifically, a "dormant" repair structure containing a repair material is pre-placed in areas subjected to high stress. The repair structure is activated only under specific stress conditions after delamination or crack formation, remaining inert to the conventional uniform stress during the encapsulation process. Therefore, this invention proposes a repair structure whose shell is designed to withstand uniform stress (such as molding pressure) while being sensitive to local shear or tensile stress generated during interface delamination. This allows the structure to rupture at the crack and release its contents (repair material), filling the crack and preventing further interface delamination and crack propagation. The shear or tensile stress generated during interface delamination and cracking are non-uniform stresses.

[0032] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0033] The semiconductor packaging structure provided in this embodiment of the invention can be applied to various semiconductor packaging structures that require the lead frame and molding compound to form a first heterogeneous material interface. It is particularly suitable for packaging power devices, isolation devices, automotive electronic modules, and industrial control chips under high-temperature cycling, high-voltage isolation, or strong mechanical stress environments. Typical applications include, but are not limited to: optocouplers, IGBT modules, MOSFET power packages, smart power integrated circuits, and high-reliability automotive-grade chip packages.

[0034] like Figure 1 As shown, in some embodiments, the semiconductor package structure includes a lead frame 100, a molding compound 200, and a repair structure 300. The molding compound 200 covers at least a portion of the lead frame 100, and the contact surface between the molding compound 200 and the lead frame 100 forms a first heterogeneous material interface 210. The number of repair structures 300 is typically multiple, and they are at least disposed at the first heterogeneous material interface 210. All or a portion of the repair structures 300 may be disposed at the first heterogeneous material interface 210. The repair structures 300 are at least partially exposed to the first heterogeneous material interface 210 (hereinafter referred to as the "first interface"), or are arranged adjacent to the first interface, so that they can sense the shear or tensile stress generated when delamination or cracking occurs at the first interface, and trigger rupture.

[0035] like Figure 2 As shown, the repair structure 300 includes a housing 310 and contents 320. The contents 320 are encapsulated within the housing 310. The housing 310 remains intact under uniform stress and ruptures under non-uniform stress to release the contents 320.

[0036] Specifically, such as Figure 1 , Figure 2 As shown, the lead frame 100 can be made of copper-based or iron-nickel-based alloy material, and the required circuit pattern can be formed by stamping or etching. It can be used to carry chip modules and provide a path for external electrical connections. The molding compound 200 can be made of epoxy resin molding compound, which is used to encapsulate the lead frame 100 through a transfer molding process, providing mechanical support and environmental protection. At the contact point between the molding compound 200 and the lead frame 100, due to the difference in the coefficient of thermal expansion and the difference in the elastic modulus of the two materials, a first heterogeneous material interface 210 is formed. This first interface is a region where thermo-mechanical stress concentration, delamination, and cracking are prone to occur.

[0037] The housing 310 remains intact under uniform stress, but cracks under non-uniform stress. Uniform stress corresponds to the stress conditions during the packaging process, while non-uniform stress corresponds to the occurrence of delamination or cracks during use.

[0038] Specifically, during the manufacturing process of the semiconductor package structure, the molding compound 200 undergoes a molding process during its formation. In this process, molten molding material (i.e., the flowing molding compound) is injected into the cavity of the mold, and the repair structure 300 is subjected to isotropic uniform compressive stress (i.e., isostatic pressure), which does not include shear or tensile components. At this time, the housing 310 can maintain structural integrity and will not crack, ensuring that the repair structure 300 will not be unexpectedly triggered during the packaging process, and that the contents 320 will not leak prematurely, thereby guaranteeing the repair capability in subsequent service stages.

[0039] Correspondingly, during the service life of the semiconductor package structure, when subjected to temperature cycling or mechanical loads, local stress concentration occurs between the lead frame 100 and the molding compound 200 due to inconsistencies in thermo-mechanical properties. Once initial delamination or cracking occurs at the first heterogeneous material interface 210, the stress field around the delamination or crack changes drastically. A highly non-uniform stress field is generated at the delamination slit or crack tip, containing shear stress and / or tensile stress. Specifically, shear stress mainly originates from relative sliding or misalignment on both sides of the delamination or crack, while tensile stress mainly originates from separation on both sides of the delamination or crack. When these non-uniform stresses act on the housing 310, they cause torsional or bending deformation of the housing 310, generating shear or tensile stress components within the housing 310. When the shear stress and / or tensile stress exceed the bearing limit of the housing 310 material, the housing 310 fractures.

[0040] Furthermore, the shell 310 of the repair structure 300 can be made of brittle materials, such as polymers, specifically urea-formaldehyde resin, melamine resin, polyurethane, etc., or an inorganic / organic composite shell material. The design of the shell 310 to preferentially fracture under non-uniform stress can be achieved in various ways, which will be described in detail below.

[0041] When the casing 310 ruptures, the contents 320 encapsulated inside are released into the delamination or crack path of the first heterogeneous material interface 210. The released contents 320 fill the cracks by means of capillary action or their own fluidity, forming a filling interface or filling band.

[0042] In some implementations, the contents 320 are used to fill delaminations or cracks at the first heterogeneous material interface 210 after release to inhibit further propagation of the delaminations or cracks. At room temperature, the contents 320 are in a fluid state, possessing sufficient fluidity to enter and spread within the delamination sites or crack paths. As an example, the contents 320 may be one or more of epoxy addition-curing resin precursors, siloxane prepolymers, polyimide addition-curing resin precursors, or acrylate oligomers. These materials can transform into a solid or gel state after release by utilizing the operating environment (e.g., temperature) of the encapsulation structure, thereby forming a repair band with mechanical strength.

[0043] The contents 320 are themselves a thermosetting addition-curing resin precursor, stable at room temperature and not curing, only curing when a certain temperature threshold is reached (e.g., the upper limit of the package's service temperature of 150°C to 175°C). When intact, the contents 320 are sealed within the housing 310. Even when subjected to service temperatures, the housing 310 provides insulation, and the interior of the housing 310 lacks the moisture required for curing (e.g., the active groups in the resin react chemically with water molecules in the air to form a cross-linked network, thus curing into an elastomer or solid), therefore it will not cure. Once ruptured, the contents are exposed to the interfacial environment and cure at the service temperature or by reacting with moisture in the air.

[0044] In one variation, to achieve long-term stability of the contents 320 within the housing 310 and timely curing upon rupture, the contents 320 further comprises two components (e.g., an addition-cure resin precursor and a curing agent). Each component is stable and flowable before mixing, and cures upon mixing. Furthermore, they are stored separately in a two-component isolated manner, meaning the addition-cure resin precursor and the curing agent are not simultaneously mixed and stored in the same space within the same housing 310. Of course, these two components are merely an example; other embodiments may use more components.

[0045] Specifically, the contents 320 of the repair structure 300 can be an epoxy addition-cure resin precursor (such as bisphenol A type epoxy resin), and the curing agent is an imidazole latent curing agent. The curing agent and the addition-cure resin precursor are encapsulated in different shells 310, or only the addition-cure resin precursor can be encapsulated in the shell 310, while the curing agent is pre-dispersed at the first interface in the form of micropowder. As before, these two components are only examples, and other embodiments may use more components.

[0046] In another variation, the contents 320 further include two components: a catalytic cyclic olefin monomer (which, after release, needs to come into contact with a catalyst to undergo a ring-opening metathesis polymerization reaction and solidify) and a catalyst.

[0047] Similarly, the catalytic cyclic olefin monomer and the catalyst can also be stored separately in different shells 310 as described above. Alternatively, the catalytic cyclic olefin monomer can be enclosed in the shell 310 while the catalyst is pre-coated to the first interface.

[0048] Furthermore, to prevent the two (catalytic cyclic olefin monomer and catalyst) from coming into premature contact and undergoing polymerization, a double-capsule isolation packaging method can also be used.

[0049] Specifically, the repair structure is a core-shell-shell double-capsule structure (i.e., a capsule within a capsule). First, the Grubbs catalyst is dispersed in an inert support (such as paraffin or a low-melting-point polymer) to form micron-sized catalyst microspheres. Then, these catalyst microspheres serve as the core, and an intermediate shell composed of urea-formaldehyde resin or polyurethane is coated onto them. Finally, the catalyst microspheres coated with the intermediate shell are dispersed in DCPD monomers, forming an outer shell composed of melamine resin or cross-linked polystyrene. The final repair structure contains a core microsphere encapsulating the catalyst, surrounded by a DCPD monomer layer, and an outermost shell.

[0050] Through the above methods, the resulting filler strip (repair strip) serves to prevent further crack propagation, buffer stress concentration, or re-bond the interface, thereby inhibiting the continued extension of delamination or cracks and maintaining the mechanical integrity and electrical reliability of the encapsulation structure.

[0051] In some embodiments, the housing 310 has a stress-sensitive region, and under non-uniform stress, the stress-sensitive region of the housing 310 breaks preferentially over other regions of the housing 310 outside the stress-sensitive region.

[0052] Specifically, this can be achieved through geometric design or material modification. Since the compressive strength of brittle materials (such as polymers) is typically higher than their tensile strength, when the housing 310 is subjected to uniform compressive stress (such as the molding pressure during encapsulation), this peak compressive stress is insufficient to cause the housing 310 to fracture. When the housing 310 is subjected to non-uniform stress (such as shear stress or tensile stress), it will undergo torsional, bending, or tensile deformation, generating localized tensile stress peaks in stress-sensitive areas. Shear stress creates a tensile zone on one side of the housing 310 through bending, while tensile stress forms a tensile stress field. Geometric or material discontinuities in stress-sensitive areas further exacerbate tensile stress concentration. The peak tensile stress experienced by stress-sensitive areas under non-uniform stress is significantly higher than in other areas, enabling the housing 310 to fracture rapidly in response to delamination or cracking.

[0053] In one variation, the stress-sensitive region includes an embrittlement zone, whose fracture toughness is lower than that of other regions of the shell 310 outside the embrittlement zone. The embrittlement zone refers to a localized area on the shell 310 that has undergone material modification treatment, resulting in a fracture toughness lower than other areas of the shell 310. The lower the fracture toughness, the more easily the material undergoes brittle fracture under tensile stress. The embrittlement zone can be formed through methods such as ultraviolet light irradiation, plasma treatment, electron beam irradiation, or thermal aging, which increases the cross-linking density of the polymer material in this region or degrades the molecular chains, leading to a decrease in fracture toughness. After the embrittlement zone is formed, its wall thickness can be essentially the same as other regions of the shell 310, achieving preferential fracture without relying on geometric thinning.

[0054] In another variation, the stress-sensitive region includes a thinned area, the average wall thickness of which is less than that of other areas of the housing 310 outside the thinned area. The thinned area refers to a region on the housing 310 where the wall thickness is locally reduced. The thinned area can be formed by methods such as laser etching, mechanical imprinting, or chemical etching.

[0055] Furthermore, the thinned region includes a fracture-inducing structure 330, which is a notch, notch, or indentation. A notch refers to a recessed area with a specific geometric shape at the edge or inside of the thinned region. The cross-sectional shape of the notch can be V-shaped (e.g., ...). Figure 2 (As shown), U-shaped or arc-shaped. A notch refers to a linear mark formed on the surface of the thinned area by mechanical scribing or laser marking. An indentation refers to a pit-like structure formed on the surface of the thinned area by mechanical stamping or die forming. By setting fracture-inducing structures 330 such as notches, notches, or indentations, the sensitivity of the shell 310 to non-uniform stress is further improved.

[0056] In some implementations, the stress-sensitive regions are distributed in a ring shape within the shell 310. A ring-shaped distribution means that the stress-sensitive regions form closed or open annular bands along the circumference of the shell 310. For ellipsoidal or capsule-shaped shells 310, the annular stress-sensitive regions can be located at the equator of the shell 310, where the maximum bending deformation and tensile stress concentration occur when the shell 310 is subjected to shear stress, making the shell 310 sensitive to shear stress from any direction. The annular stress-sensitive regions can be continuous annular thinning bands, annular embrittlement zones, or intermittently distributed annular fracture-inducing structures 330.

[0057] In some implementations, the stress-sensitive regions are distributed in an elongated strip shape within the shell 310. This elongated strip distribution refers to the stress-sensitive regions extending along a specific direction within the shell 310 to form a strip-shaped area. When the predominant direction of the expected non-uniform stress is known (e.g., a common crack propagation path is parallel to the edge of the lead frame 100, thus deriving that the predominant tensile stress direction is perpendicular to the crack), the elongated stress-sensitive regions can be arranged perpendicular to this direction to maximize the tensile stress concentration effect. The elongated stress-sensitive regions can be achieved through strip-shaped embrittlement or strip-shaped notching.

[0058] Furthermore, both annular and elongated stress-sensitive areas can be simultaneously provided on the same housing 310 to cope with complex stress environments.

[0059] In some embodiments, such as Figures 1-4As shown, the repair structure 300 includes at least a first repair structure 301 and a second repair structure 302. The fracture stress threshold of the first repair structure 301 is greater than that of the second repair structure 302. The fracture stress threshold refers to the minimum non-uniform stress required for the shell 310 of the repair structure 300 to fracture. The fracture stress threshold is a parameter characterizing the sensitivity of the shell 310 to non-uniform stress. A lower threshold means the shell 310 can fracture under relatively small non-uniform stress; a higher threshold requires a larger non-uniform stress to trigger fracture. The magnitude of the fracture stress threshold depends on the geometric parameters (such as wall thickness, thinning zone size, curvature) and material parameters (such as fracture toughness, elastic modulus) of the shell 310. For example, a shell 310 with a thicker wall, shallower thinning zone notch, or higher fracture toughness has a higher fracture stress threshold; conversely, it has a lower threshold.

[0060] In some implementations, the repair structure 300 is arranged along a preset crack propagation path (e.g., Figure 3 (In the x-direction). The preset crack propagation path includes a sequentially connected starting region, propagation region, and ending region, i.e., along... Figure 3 In the x-direction, the arrows point sequentially from the starting region to the expansion region, and then to the ending region. The first repair structure 301 is located in the starting region of the preset crack propagation path, and the second repair structure 302 is located in the expansion region and / or the ending region of the preset crack propagation path.

[0061] Specifically, the stress concentration is highest and the non-uniform stress peak is largest in the crack initiation region, while the stress peak at the crack tip gradually decreases as the crack extends into the propagation and termination regions. Therefore, placing the first repair structure 301 with a higher fracture stress threshold in the initiation region and the second repair structure 302 with a lower fracture stress threshold in the propagation and / or termination regions ensures that the repair structure 300 in the initiation region is triggered under higher local stress, while the repair structures 300 in the propagation and termination regions are triggered under lower local stress. This allows the repair structures 300 in different regions to rupture and release their contents 320 in a timely manner when the crack arrives.

[0062] In other implementations, the repair structures 300 are distributed in a strip-like pattern at the first heteromaterial interface 210. In semiconductor packaging structures, when a crack occurs at the first heteromaterial interface 210, the crack typically extends laterally along the first interface, forming a long strip-shaped crack, and the direction of extension is often parallel to the edge of the lead frame 100. A strip-like distribution refers to multiple repair structures 300 arranged in a roughly continuous strip-like shape along the first heteromaterial interface 210, and the extension direction of the strip-like distribution can be perpendicular or parallel to the predetermined crack propagation direction.

[0063] Specifically, the extension direction of the banded distribution can be perpendicular to the preset crack propagation direction, allowing the repair structure 300 to span the crack propagation path. When the crack propagates along the interface to this banded area, the crack tip triggers the rupture of the repair structure 300 within the band, releasing its contents 320 to fill the crack and form a repair barrier perpendicular to the crack direction, thereby preventing the crack from continuing to extend forward. Multiple barrier bands can be set along the possible path of the crack, forming multiple layers of protection. The extension direction of the banded distribution can also be parallel to the preset crack propagation direction, with the repair structure 300 continuously arranged along the expected crack propagation path. As the crack propagates along this path, the repair structures 300 along the way are triggered sequentially, and the released contents 320 gradually fill each segment of the crack, achieving complete filling and repair of the crack path.

[0064] The two types of strip-shaped arrangements (i.e., vertical and parallel) mentioned above can be used individually or simultaneously, that is, the repair structure is set in a matrix or grid-like form at the first heterogeneous material interface 210 (e.g. Figure 4 (As shown).

[0065] In some implementations, the distribution density of the repair structure 300 varies with the stress level of the first heterogeneous material interface 210, with a higher distribution density in areas of higher stress than in areas of lower stress. Here, "higher stress" refers to a comparison of the stress experienced by different regions of the first heterogeneous material interface 210 during service, not the stress experienced by the housing 310. Distribution density refers to the number of repair structures 300 per unit area or unit length. Higher distribution densities are set in areas of higher stress, and lower distribution densities are set in areas of lower stress. Methods to achieve this density difference include: achieving high density by selective coating (e.g., applying adhesive only in geometric corner areas) or adjusting coating parameters (e.g., increasing the number of prints or reducing the dispensing spacing in corner areas) when configuring the repair structures 300; and correspondingly reducing the number of repair structures 300 or increasing their spacing in low-stress areas.

[0066] The geometric corners of the lead frame 100 can be locations within the lead frame 100 where angles change, including but not limited to the connection points between the lead leads and the main body of the lead frame 100, the steps at the edges of the lead frame 100, or the connections and corners between other devices mounted on the lead frame 100 and the lead frame 100. These geometric corner areas will experience significant stress concentration under thermal cycling or mechanical loading, with stress peaks typically several times higher than those in straight sections, making them the most likely locations for interface delamination and crack initiation.

[0067] In some implementations, the lead frame 100 is provided with a chip module 400 and a wire 500 electrically connected to the chip module 400. The repair structure 300 is further provided with at least one of the following: a second heterogeneous material interface 220 (the contact surface between the molding compound 200 and the chip module 400) and a third heterogeneous material interface 230 (the contact surface between the molding compound 200 and the wire 500). The distribution density of the repair structure 300 at the first heterogeneous material interface 210 is greater than the distribution density at the second heterogeneous material interface 220, and the distribution density of the repair structure 300 at the second heterogeneous material interface 220 is greater than the distribution density at the third heterogeneous material interface 230.

[0068] Specifically, in a typical semiconductor packaging structure, a chip module 400 is fixed to the lead frame 100 by an adhesive material. Electrodes on the chip module 400 are electrically connected to the internal pins of the lead frame 100 via wires 500 (such as gold or copper wires). The molding compound 200 not only contacts the lead frame 100 but also forms a second heterogeneous material interface 220 and a third heterogeneous material interface 230 with the surface of the chip module 400 and the surface of the wires 500. The second heterogeneous material interface 220 and the third heterogeneous material interface 230 also experience the aforementioned thermo-mechanical stress, but the stress level is different from that of the first heterogeneous material interface 210.

[0069] Furthermore, based on the aforementioned differences in stress magnitude, this embodiment sets the distribution density of the repair structure 300 as follows: the first heterogeneous material interface 210 is greater than the second heterogeneous material interface 220, and the second heterogeneous material interface 220 is greater than the third heterogeneous material interface 230. This ensures the repair capability of the critical interfaces while avoiding resource waste caused by over-configuration at low-stress interfaces, thus achieving the optimal allocation of the repair structure 300 within the entire encapsulation range.

[0070] In a typical application scenario, the shell 310 is spherical, ellipsoidal, or hemispherical cylindrical. A spherical shell 310 means that the outer contour of the shell 310 approximates a sphere, having the same radius of curvature in all directions. An ellipsoidal shell 310 means that the outer contour of the shell 310 approximates an ellipsoid, having a major axis and a minor axis. When the repair structure 300 is dispersed in the flowing encapsulant 200 or coating slurry, the non-spherical shell 310 will rotate in the shear flow field, and its major axis tends to align along the flow direction. Utilizing this characteristic, the major axis of the ellipsoidal shell 310 can be oriented during configuration, thereby orienting the stress-sensitive area towards a predetermined direction (such as towards the first heterogeneous material interface 210). A hemispherical cylindrical shell 310 means that the shell 310 is composed of a cylindrical section and hemispherical ends at both ends, also known as a capsule shape. This shape combines the straight profile of a cylindrical segment with the curved transition of a hemispherical end, exhibiting orientation characteristics in the fluid as well, with its major axis (the axial direction of the cylindrical segment) tending to align with the flow direction. The stress-sensitive region of the hemispherical cylindrical shell 310 can be located at the equator of the cylindrical segment or at the transition point between the hemispherical end and the cylindrical segment. The ellipsoidal and hemispherical cylindrical shells 310 not only possess stress sensitivity but also achieve directional alignment in the fluid, oriented the stress-sensitive region towards a preset direction, further improving triggering accuracy.

[0071] Furthermore, the feature dimensions of the housing 310 can be selected according to the actual needs of the packaging structure. For example, the major axis (or diameter) of the housing 310 can be in the range of 10 μm to 200 μm, preferably 30 μm to 80 μm, to adapt to the morphology of the lead frame 100 surface and the first heterogeneous material interface 210.

[0072] In some embodiments, the housing 310 is made of an insulating material doped with dielectric particles, conductive particles, or magnetic particles. Dielectric particles refer to insulating micro / nano particles with a high dielectric constant, such as barium titanate, titanium dioxide, or strontium titanate. Conductive particles refer to conductive micro / nano particles, such as gold, silver, copper, or carbon nanotubes. Magnetic particles refer to ferromagnetic micro / nano particles, such as iron(III) oxide or nickel powder. These particles are doped into the insulating matrix material of the housing 310 (such as urea-formaldehyde resin, melamine resin, or polyurethane), with a doping volume fraction ranging from 0.5% to 5%.

[0073] After the aforementioned particles are doped into the shell 310 material, the shell 310 responds to an applied electric or magnetic field. When an alternating electric field is applied, the shell 310 doped with dielectric or conductive particles generates an induced dipole moment and rotates under the action of dielectric force, with its long axis tending to align along the direction of the electric field lines. When a magnetic field is applied, the shell 310 doped with magnetic particles rotates under the action of magnetic torque, with its long axis tending to align along the direction of the magnetic field lines. By aligning the long axis of the shell 310 with an applied electric or magnetic field, the stress-sensitive region of the shell 310 is oriented towards a predetermined direction (e.g., towards the first heteromaterial interface 210 or towards the expected crack propagation direction). After orientation is achieved, the electric or magnetic field can be removed, and the shell 310 remains in its oriented state. Subsequently, the carrier material is cured to fix its orientation.

[0074] In addition, embodiments of the present invention also provide a method for manufacturing a semiconductor packaging structure.

[0075] First, S101 provides a lead frame 100.

[0076] Next, in S102, the flowing encapsulant 200 is injected into the lead frame 100. The encapsulant 200 covers at least a portion of the lead frame 100 and forms a first heterogeneous material interface 210 with the contact surface of the lead frame 100. The flowing encapsulant 200 contains a pre-mixed repair structure 300, which includes a housing 310 and contents 320, with the contents 320 encapsulated within the housing 310.

[0077] Specifically, the repair structure 300 is premixed into the flowing material used to form the encapsulant 200. The shell 310 of the repair structure 300 can be made of a polymer material (such as urea-formaldehyde resin or melamine resin), and the contents 320 are an insulating fluid that flows at room temperature (such as an epoxy addition-curing resin precursor or a siloxane prepolymer). When the repair structure 300 is mixed with the flowing encapsulant 200 material, mechanical stirring or ultrasonic dispersion can be used to ensure that the repair structure 300 is uniformly distributed.

[0078] After mixing, the flowing encapsulant 200 containing the repair structure 300 is injected onto the lead frame 100. The injection method can employ conventional processes such as transfer encapsulation, compression encapsulation, or jet encapsulation. During the injection process, the flowing encapsulant 200 covers at least a portion of the lead frame 100, and a first heterogeneous material interface 210 is formed at the contact point between the encapsulant 200 and the lead frame 100.

[0079] After injection, S103 drives at least a portion of the repair structure 300 to aggregate at the first heterogeneous material interface 210.

[0080] Since the initial distribution of the repair structure 300 in the flowing encapsulant 200 is random, without intervention, only a portion of the repair structure 300 will be dispersed at the interface after curing, failing to fully function during interface delamination. Therefore, this embodiment uses a step to drive the repair structure 300 to aggregate, thereby migrating the repair structure 300 towards the interface. Specific implementation methods for the aggregation step may include gravity settling, centrifugal separation, electric field guidance, magnetic field guidance, or surface adsorption, which will be further described in detail below.

[0081] After the aggregation step is completed, S104 solidifies the flowing encapsulant 200, and at least a portion of the repair structure 300 is distributed at the first heterogeneous material interface 210 after solidification. The solidification method depends on the material of the encapsulant 200, and is usually heat-cured. For example, it is cured at 150°C to 180°C for 30 seconds to 2 minutes. After solidification, at least a portion of the repair structure 300 remains located at the first heterogeneous material interface 210. Because the shell 310 remains intact under uniform compressive stress during the encapsulation process, the contents 320 will not leak prematurely; however, if delamination or cracking occurs at the first heterogeneous material interface 210 during subsequent service, the shell 310 will rupture under non-uniform stress and release the contents 320.

[0082] In some implementations, the aggregation method is static settling. The density of the repair structure 300 is designed to be greater than the density of the flowing encapsulant 200. After the flowing encapsulant 200 is injected, the mold containing the lead frame 100 and encapsulant 200 material is left to stand for a period of time. During this settling period, the lead frame 100 should be located at the bottom in the direction of gravity, i.e., below the mold. Under the influence of gravity, the repair structure 300 overcomes buoyancy and viscous resistance, settling towards the bottom of the mold. Since the lead frame 100 is at the bottom, the repair structure 300 gradually settles and accumulates on the surface of the lead frame 100, i.e., at the future first heterogeneous material interface 210. The settling time can be determined based on the density difference between the repair structure 300 and the encapsulant 200, as well as the viscosity of the encapsulant 200, for example, 30 seconds to 10 minutes. After the settling period, curing is performed to fix the repair structure 300 at the interface.

[0083] In some implementations, the aggregation method is centrifugation. After the injection of the flowing encapsulant 200, the mold is placed in a centrifuge, with the centrifugal force directed towards the surface of the lead frame 100. Centrifugation can significantly accelerate the migration of the repair structure 300 and is suitable for situations where the viscosity of the encapsulant 200 is high or the density difference of the repair structure 300 is small. After centrifugation, the repair structure 300 moves to the surface of the lead frame 100 (i.e., the first heterogeneous material interface 210) under the action of centrifugal force, and then solidifies. The centrifugation method does not require the density of the repair structure 300 to be greater than that of the encapsulant 200, because the centrifugal force can overcome the buoyancy difference, and even if the density of the repair structure 300 is low, it can still be moved in the direction of the centrifugal force.

[0084] In addition, embodiments of the present invention also provide another method for manufacturing a semiconductor packaging structure.

[0085] Specifically, this implementation method adopts a process sequence of "preparation followed by sealing".

[0086] First, S201 provides a lead frame 100.

[0087] Then, in S202, a repair structure 300 is provided on the lead frame 100. The repair structure 300 includes a housing 310 and contents 320, with the contents 320 encapsulated within the housing 310.

[0088] Specifically, the installation methods may include printing, dispensing, spraying, pre-embedding, etc., which will be further explained below. Since the repair structure 300 is set on the surface of the lead frame 100, after the subsequent injection of the flowing encapsulant 200 and its curing, the repair structure 300 is naturally located at the contact surface between the encapsulant 200 and the lead frame 100, i.e., at the first heterogeneous material interface 210, without the aforementioned aggregation step.

[0089] After the repair structure 300 is set, in S203, the flowing encapsulant 200 is injected into the lead frame 100, the encapsulant 200 covers at least a portion of the lead frame 100 and forms a first heterogeneous material interface 210 with the contact surface of the lead frame 100.

[0090] During the injection process, the flowing encapsulant 200 covers the lead frame 100 and the repair structure 300 already disposed on its surface. The repair structure 300 is already fixed to the surface of the lead frame 100, and the flow of the encapsulant 200 may cause erosion on it. Therefore, further, the injection speed can be controlled, or a low-viscosity, low-flow-rate encapsulation process can be used, or the repair structure 300 can be pre-fixed before injection through pre-curing / pre-drying.

[0091] Subsequently, the S204 solidifies the flowing encapsulated body 200, and the repair structure 300 is distributed at the first heterogeneous material interface 210 after solidification.

[0092] In some implementations, printing is employed. Specifically, printing involves dispersing the repair structure 300 in a paste and transferring it onto the surface of the lead frame 100 using screen printing or stencil printing. Screen printing is suitable for larger areas with lower precision; stencil printing uses metal stencils, offering higher precision and is suitable for narrow spacing or small areas. After printing, the repair structure 300 can be fixed by low-temperature drying or pre-curing.

[0093] In other implementations, dispensing is used. Dispensing specifically refers to dispersing the repair structure 300 in a colloid or solvent, and then precisely applying droplets containing the repair structure 300 to specific locations (such as corners or edges) of the lead frame 100 using a pneumatic or screw-type dispensing needle. Dispensing is suitable for small-batch, high-precision configurations with complex shapes.

[0094] In some implementation methods, spraying is used. Specifically, spraying involves dispersing the repair structure 300 in a volatile carrier and atomizing it through a nozzle onto the surface of the lead frame 100. Spraying offers a large coverage area and high efficiency, but its positional accuracy is relatively low, making it suitable for large-area uniform coating.

[0095] In some implementations, a pre-embedded method is used. Specifically, the pre-embedded method means that before the lead frame 100 is placed into the mold, the repair structure 300 is placed in the corresponding groove of the mold cavity in solid form. After the mold is closed, the lead frame 100 contacts the repair structure 300. During molding, the repair structure 300 is embedded into the first heterogeneous material interface 210.

[0096] The above methods can be used individually or in combination according to the differences in different areas of the packaging structure, depending on actual needs.

[0097] In some embodiments, the housing 310 is made of an insulating material doped with dielectric particles, conductive particles or magnetic particles, and before the injection of the flowing encapsulant 200 to the lead frame 100, it further includes: applying a directional electric field or magnetic field to the repair structure 300 so that the repair structure 300 is aligned in a predetermined direction.

[0098] Specifically, the shell 310 is made of an insulating material doped with dielectric particles, conductive particles, or magnetic particles. The dielectric particles (such as barium titanate, titanium dioxide), conductive particles (such as gold, silver, carbon nanotubes), or magnetic particles (such as iron oxide, nickel powder) can be uniformly doped throughout the shell 310 material, or selectively concentrated in stress-sensitive regions of the shell 310 (e.g., thinned areas, notches). By controlling the local concentration of the doped particles, the stress-sensitive regions can exhibit stronger electric or magnetic field response capabilities.

[0099] A directional electric or magnetic field is applied after the repair structure 300 is placed on the surface of the lead frame 100 and before the injection of the flowing encapsulant 200.

[0100] In some embodiments, when the housing 310 is ellipsoidal or capsule-shaped (i.e., a non-spherical geometry with a major axis and a minor axis), and dielectric, conductive, or magnetic particles are uniformly distributed in the material of the housing 310, applying an external electric or magnetic field can achieve a uniform alignment of the housing 310. When the material of the housing 310 is doped with dielectric or conductive particles, these particles generate an induced dipole moment under the action of an external electric field and are subjected to dielectric force. When the material of the housing 310 is doped with magnetic particles, the magnetic particles are subjected to a magnetic torque under the action of an external magnetic field, driving the housing 310 to rotate. For a non-spherical repair structure 300 with a major axis and a minor axis, the major axes of all housings 310 are aligned uniformly along the direction of the external field. In this case, the location of the stress-sensitive region can be aligned with the direction of the major axis to match the expected force direction (e.g., the direction of shear stress), thereby increasing the probability of triggering.

[0101] Preferably, dielectric particles, conductive particles, or magnetic particles can be selectively concentrated in the stress-sensitive region of the shell 310, wherein the stress-sensitive region is directional (asymmetrically distributed). In this approach, the shell 310 does not necessarily need to be ellipsoidal or capsule-shaped. By using non-uniformly distributed dielectric, conductive, or magnetic particles, a rapid response is achieved when delamination or cracks occur, and the release direction of the contents 320 can be controlled, improving repair efficiency and reducing waste of repair materials.

[0102] In some variations, if the stress-sensitive region has a higher concentration of doped dielectric or conductive particles, the region experiences a greater torque, driving the entire housing 310 to rotate until the stress-sensitive region is oriented towards a specific direction with the largest electric field gradient (e.g., perpendicular to the electrode plate). By pre-setting the geometry of the electrodes and the direction of the electric field, the stress-sensitive region can be oriented towards a predetermined direction, such as towards the future first heteromaterial interface 210, or towards a predetermined crack propagation direction.

[0103] In other variations, if the concentration of doped magnetic particles in the stress-sensitive region is higher, the region tends to align along the direction of the magnetic field lines. By adjusting the direction of the magnetic field, the stress-sensitive region can be oriented in a predetermined direction so that it withstands the maximum shear or tensile stress during interface delamination.

[0104] Specifically, a detailed explanation is given using an adhesive droplet containing the repair structure 300 applied to the lead frame 100 via a dispensing device. The repair structure 300 is pre-dispersed in a UV-curable adhesive carrier, which is then dispensed onto the surface of the lead frame 100 to be encapsulated. After dispensing but before the adhesive cures, a permanent magnet or electromagnetic coil can be placed below the lead frame 100 to ensure the magnetic field direction is vertically upward (pointing from the lead frame 100 towards the future encapsulated body 200). Because the stress-sensitive area of ​​the repair structure 300 is enriched with magnetic particles, the total magnetic moment generated in this area is much greater than in other areas of the housing 310. The housing 310 rotates in the applied magnetic field until the direction of the total magnetic moment aligns with the direction of the external magnetic field. Ultimately, the stress-sensitive area is located above the housing 310, i.e., facing the first heterogeneous material interface 210. At this point, the stress-sensitive region is precisely oriented toward the outer surface of the lead frame 100, that is, toward the direction in which the surface subsequently contacts the molding compound 200 to form the first heterogeneous material interface 210, so as to enable the packaging structure to respond quickly and fully fill the interface layer during future service.

[0105] For more detailed information on the semiconductor packaging structure, please refer to the relevant descriptions in the previous embodiments, which will not be repeated here.

[0106] It should be understood that the term "and / or" in this document is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone. Additionally, the character " / " in this document indicates that the preceding and following related objects are in an "or" relationship. As used herein, unless otherwise expressly stated, the term "or" covers all possible combinations unless it is not feasible. For example, if a component is declared to include A or B, then unless otherwise expressly stated or not feasible, the component can include A, or B, or A and B. As a second example, if a component is declared to include A, B, or C, then unless otherwise expressly stated or not feasible, the component can include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0107] In the embodiments of this application, "multiple" refers to two or more.

[0108] Relational terms appearing in the embodiments of this application, such as "first," "second," etc., are used only to distinguish an entity or operation from another entity or operation, without requiring or implying any actual relationship or order between these entities or operations. Furthermore, the words "comprising," "having," and "including," and other similar forms, are intended to be equivalent in meaning and are open-ended; one or more items following any of these words do not imply an exhaustive list of such items or that they are limited to only the listed items. Exemplary embodiments have been disclosed in the drawings and specification. However, many variations and modifications can be made to these embodiments. Therefore, although specific terminology is used, it is used only in a general and descriptive sense and not for limiting purposes.

[0109] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A semiconductor package structure, comprising: The package comprises: a lead frame; a plastic package covering at least a portion of the lead frame, the plastic package and the lead frame forming a first heterogeneous material interface; a repair structure disposed at least at the first heterogeneous material interface, the repair structure comprising: a shell; a content encapsulated in the shell; wherein the shell remains intact under uniform stress and ruptures under non-uniform stress to release the content.

2. The semiconductor package structure of claim 1, wherein, The non-uniform stress includes shear stress, tensile stress or a combination thereof generated when the first heterogeneous material interface delaminates or cracks.

3. The semiconductor package structure of claim 1, wherein, The shell has a stress sensitive region, which preferentially ruptures under non-uniform stress compared to other regions of the shell outside the stress sensitive region.

4. The semiconductor package structure of claim 3, wherein, The stress sensitive region includes a weakened region having a lower fracture toughness than other regions of the shell outside the weakened region.

5. The semiconductor package structure of claim 3, wherein, The stress sensitive region includes a thinned region having an average wall thickness smaller than other regions of the shell outside the thinned region.

6. The semiconductor package structure of claim 5, wherein, The thinned region includes a rupture-inducing structure, which is a notch, a score or an indentation.

7. The semiconductor package structure of claim 3, wherein, The stress sensitive region is distributed in a ring shape or a long strip shape on the shell.

8. The semiconductor package structure of claim 1, wherein, The repair structure includes at least a first repair structure and a second repair structure, the first repair structure having a higher rupture stress threshold than the second repair structure, the rupture stress threshold being the minimum non-uniform stress at which the shell of the repair structure ruptures.

9. The semiconductor package structure of claim 8, wherein, The repair structure is arranged along a pre-determined crack propagation path, the pre-determined crack propagation path including a start region, an extension region and an end region connected in sequence, the first repair structure being disposed at the start region of the pre-determined crack propagation path, and the second repair structure being disposed at the extension region and / or the end region of the pre-determined crack propagation path.

10. The semiconductor package structure of claim 1, wherein, The repair structure is distributed in a strip shape on the first heterogeneous material interface.

11. The semiconductor package structure of claim 1, wherein, The distribution density of the repair structure varies with the stress of the first heterogeneous material interface, the distribution density being higher in regions of higher stress than in regions of lower stress.

12. The semiconductor package structure of claim 11, wherein, Within the first heterogeneous material interface, the distribution density of the repair structure is higher in regions corresponding to geometric corners of the lead frame than in regions corresponding to flat portions of the lead frame.

13. The semiconductor package structure of claim 11, wherein, The lead frame has a chip module and a wire electrically connected to the chip module, and the repair structure is further disposed at least at one of: a second heterogeneous material interface between the plastic package and the chip module; a third heterogeneous material interface between the plastic package and the wire; wherein the distribution density of the repair structure on the first heterogeneous material interface is higher than the distribution density of the repair structure on the second heterogeneous material interface, and the distribution density of the repair structure on the second heterogeneous material interface is higher than the distribution density of the repair structure on the third heterogeneous material interface.

14. The semiconductor package structure of claim 1, wherein, The shell is in a spherical shape, an ellipsoidal shape or a hemispherical head cylindrical shape.

15. The semiconductor package structure of claim 1, wherein, The shell is made of an insulating material doped with dielectric particles, conductive particles or magnetic particles.

16. A method of manufacturing a semiconductor package structure, characterized by, The method comprises the following steps: providing a lead frame; injecting a flowing plastic encapsulant to the lead frame, the flowing plastic encapsulant covering at least a part of the lead frame and forming a first heterogeneous material interface with a contact surface of the lead frame, the flowing plastic encapsulant being previously mixed with a repair structure, the repair structure comprising a shell and a content encapsulated in the shell; driving at least a part of the repair structure to gather at the first heterogeneous material interface; solidifying the flowing plastic encapsulant, at least a part of the repair structure being distributed at the first heterogeneous material interface after solidification; wherein the shell remains intact under uniform stress and ruptures under non-uniform stress to release the content.

17. The production method according to claim 16, wherein The method of gathering the repair structure at the first heterogeneous material interface comprises: before solidification of the flowing plastic encapsulant, performing a static treatment on a mold of the flowing plastic encapsulant, the lead frame being located at the bottom of the gravity direction, so that the repair structure settles to the first heterogeneous material interface, wherein the density of the repair structure is greater than the density of the flowing plastic encapsulant; or performing a centrifugal treatment on the mold of the flowing plastic encapsulant, so that the repair structure moves to the first heterogeneous material interface under the centrifugal effect.

18. A method of manufacturing a semiconductor package structure, characterized by, The method comprises the following steps: providing a lead frame; providing a repair structure on the lead frame, the repair structure comprising a shell and a content encapsulated in the shell; injecting a flowing plastic encapsulant to the lead frame, the flowing plastic encapsulant covering at least a part of the lead frame and forming a first heterogeneous material interface with a contact surface of the lead frame; solidifying the flowing plastic encapsulant, the repair structure being distributed at the first heterogeneous material interface after solidification; wherein the shell remains intact under uniform stress and ruptures under non-uniform stress to release the content.

19. The production method according to claim 18, wherein The method of providing the repair structure on the lead frame comprises one or more combinations of the following: printing, dispensing, spraying, and pre-embedding.

20. The production method according to claim 18 or 19, wherein The shell is made of an insulating material doped with dielectric particles, conductive particles, or magnetic particles, and before the flowing plastic encapsulant is injected to the lead frame, the method further comprises: applying a directional electric field or a magnetic field to the repair structure, so that the repair structure is arranged in a preset direction.

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