Systems and methods for near substrate gas delivery
Patent Information
- Application Number
- CN202580015250.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-02-15
- Filing Date
- 2025-01-29
- Publication Date
- 2026-09-11
AI Technical Summary
气体输送系统用以向腔室提供工艺气体
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Figure CN122743570A_ABST
Abstract
Description
Background Technology
[0001] field
[0002] This disclosure relates to systems and methods for delivering gas to a substrate, and more specifically, to systems configured to provide near-substrate gas delivery.
[0003] Related technical descriptions
[0004] In semiconductor processing, substrates are processed in chambers filled with process gases. Gas delivery systems are used to supply process gases to the chambers. Conventional gas delivery systems can supply process gases from the chamber top plate or from the chamber sidewalls. When a conventional gas delivery system supplying process gases from the chamber top plate is in operation, the central region of the substrate may receive different flow rates of process gas and grow or etch material layers at different rates compared to the substrate edges. Therefore, the substrate edges often experience uneven material growth or removal compared to the substrate center.
[0005] Therefore, a processing chamber with an improved gas delivery system is needed. Summary of the Invention
[0006] This document discloses a gas ring for supplying process gases to a processing chamber, a processing chamber having the gas ring, and a gas delivery method. The gas ring includes an annular body surrounding an inner space configured to accommodate a substrate. The gas ring further includes a network of gas channels disposed within the annular body. The gas channel network includes a plurality of circumferential gas channels coupled to a plurality of radial gas channels. The plurality of circumferential gas channels are concentrically arranged around the center of the annular body. The gas ring also includes a plurality of gas inlets coupled to the gas channel network; and a plurality of gas outlets coupled to the gas channel network and disposed along the inner surface of the annular body.
[0007] In another example, a processing chamber is disclosed, the processing chamber including a substrate support assembly configured to support a substrate, and a gas delivery system configured to deliver process gases to the substrate. The gas delivery system includes a gas ring as described in this disclosure.
[0008] In another example, a gas delivery method is provided. The method delivers process gas into a processing chamber. The gas delivery method includes conveying a substrate into an inner space surrounded by a gas ring disposed within the processing chamber; providing process gas to a gas inlet of the gas ring, the gas inlet being coupled to a network of gas channels disposed within the body of the gas ring; causing the process gas to flow circumferentially and radially along the gas channel network to reach a plurality of gas outlets disposed along the inner surface of the gas ring and near the edge of the substrate; and releasing the process gas toward the substrate through the plurality of gas outlets.
[0009] Brief description of the attached figures
[0010] To gain a more detailed understanding of the features and methods employed in this disclosure, a more specific description of the disclosure, which has been briefly outlined above, can be obtained with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and should not be construed as limiting their scope, allowing for other equally effective embodiments.
[0011] Figure 1 A schematic top view of the processing system is illustrated according to an embodiment of this disclosure.
[0012] Figure 2 A schematic cross-sectional view of a processing chamber having a gas delivery system is shown according to an embodiment of this disclosure.
[0013] Figure 3 A schematic diagram of a gas delivery system is illustrated according to an embodiment of this disclosure.
[0014] Figure 4 A schematic perspective view of an installed gas delivery system is shown according to an embodiment of this disclosure.
[0015] Figure 5 A schematic cross-sectional view of the gas ring is shown according to an embodiment of this disclosure.
[0016] Figure 6a illustrates a schematic top view of the gas ring according to an embodiment of the present disclosure.
[0017] Figure 6b is a schematic diagram illustrating the label A of the gas ring in Figure 6a according to an embodiment of the present disclosure.
[0018] Figure 6c shows a cross-sectional view of the gas ring along line B-B' in Figure 6a according to an embodiment.
[0019] Figure 6d shows a cross-sectional view of the upper portion of the gas ring along line C-C' in Figure 6a, according to an embodiment.
[0020] Figure 7 A schematic bottom view of the gas ring is shown according to an embodiment of this disclosure.
[0021] Figure 8 A gas delivery method is illustrated according to an embodiment of this disclosure.
[0022] For ease of understanding, the same reference numerals have been used to denote common elements in the figures where possible. It is contemplated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further elaboration. Detailed Implementation
[0023] This disclosure envisions terms such as "couples," "coupling," "coupled," and "coupled" as including, but not limited to, welding, fusion, interlocking, and / or fastening, such as using bolts, threaded connections, pins, and / or screws. This disclosure envisions terms such as "couples," "coupling," "coupled," and "coupled" as including, but not limited to, integral formation. This disclosure envisions terms such as "couples," "coupling," "coupled," and "coupled" as including, but not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as links, blocks, and / or frames.
[0024] This document discloses a gas delivery system capable of releasing process gases at a location adjacent to the edge of a substrate disposed in a processing chamber. The gas delivery system includes a gas ring disposed close to the substrate edge. The gas ring includes an annular body surrounding an inner space configured to accommodate the substrate. The annular body includes a network of gas channels to distribute the process gases from a plurality of gas inlets to a plurality of gas outlets. The plurality of gas outlets are disposed on the inner surface of the annular body. The plurality of gas outlets are disposed close to the substrate edge, such as within inches, centimeters, or millimeters from the substrate edge. Therefore, the gas delivery system can provide near-substrate gas release. The gas delivery system can increase the uniformity of deposited or removed material on the substrate, especially at the substrate edge.
[0025] The gas delivery system also includes gas lines configured to couple with the gas ring. The gas lines may enter the processing chamber from the side wall or bottom portion. The gas lines may be housed inside other components, such as sleeves, for protection.
[0026] Figure 1 A schematic top view of the processing system 100 is illustrated according to one or more embodiments. According to one embodiment, the processing system 100 includes a gas delivery system 220 as described in this disclosure (in... Figure 2 (And others shown in the figures). The processing system 100 includes one or more load-locking chambers 122 ( Figure 1 The diagram shows two components: a processing platform 104, a factory interface 102, and a controller 144. In one or more embodiments, the processing system 100 can be adapted to operate on CENTURA systems provided by Applied Materials Inc., located in Santa Clara, California. ® Used in integrated processing systems. It is envisioned that other processing systems (including those from other manufacturers) may be adapted to benefit from this disclosure.
[0027] The processing platform 104 includes multiple processing chambers 110, 112, 120, 128, one or more load-locking chambers 122, and a transfer chamber 136 coupled to the one or more load-locking chambers 122. The transfer chamber 136 can be maintained under vacuum or under ambient (e.g., atmospheric) pressure. Figure 1 Two load-locked chambers 122 are shown. Plant interface 102 is coupled to transfer chamber 136 via load-locked chambers 122. Gas delivery system 220 may be housed in one or more of the plurality of processing chambers 110, 112, 120, 128.
[0028] In one or more embodiments, the factory interface 102 includes at least one docking station 109 and at least one factory interface robot 114 to facilitate the transfer of substrate 124. The docking station 109 is configured to accept one or more front-opening unified pods (FOUPs). Figure 1 The implementation scheme illustrates two FOUPs 106A and 106B. A factory interface robot 114, having a blade 116 mounted on one end of a robot 114, is configured to transfer one or more substrates from FOUPs 106A and 106B through a load-locking chamber 122 to a processing platform 104 for processing. The transferred substrates may be stored, at least temporarily, in the load-locking chamber 122.
[0029] Each of the load-locking chambers 122 has a first port for interface connection to the factory interface 102 and a second port for interface connection to the transfer chamber 136. The transfer chamber 136 has a vacuum robot 130 housed therein. The vacuum robot 130 has one or more blades 134 (…). Figure 1 Two are shown in the figure, which are capable of transferring substrate 124 between load locking chamber 122 and processing chambers 110, 112, 120 and 128.
[0030] Controller 144 is coupled to processing system 100 and is used to control processes and methods, such as the operations of the methods described herein (e.g., the operations of methods described in other parts of this disclosure). Controller 144 includes a central processing unit (CPU) 138, instruction-containing memory 140, and support circuitry 142 for the CPU. Controller 144 directly controls the various components or controls them via other computers and / or controllers.
[0031] Figure 2A processing chamber 200 having a gas delivery system 220 is illustrated according to an embodiment. The processing chamber 200 can be any of processing chambers 110, 112, 128, and 120, such as... Figure 1 As shown in the image. Figure 2 The processing chamber 200 illustrated includes a chamber wall 202 coupled to a base 206. The processing chamber 200 further includes a substrate support assembly 208 supported by a base plate 204 and surrounded by a sleeve 226. A liner 230 is disposed between the sleeve 226 and the substrate support assembly 208 for protection. The chamber wall 202, base 206, and base plate 204 together enclose a processing region 210. The substrate support assembly 208 is disposed in the processing region 210 and supports a substrate 212 thereon during processing. The chamber wall 202 includes at least one substrate transfer port 242 for moving the substrate 212 into or out of the processing chamber 200. The base 206 includes an exhaust port 214 coupled to a pump (not shown), configured to remove effluent gas from the chamber 200. The chamber 200 may also include a plasma source 216, such as an RF coil, configured to excite process gas in the processing region 210. The plasma source 216 can be positioned along the cover or sidewall of the processing chamber 200.
[0032] A gas delivery system 220 of the processing chamber 200 is coupled to a plurality of gas sources 218. The gas delivery system 220 supplies process gases from the plurality of gas sources 218 to the processing area 210. The gas delivery system 220 is configured to release the process gases at a location adjacent to the edge of the substrate 212. According to embodiments, the location for releasing the process gases is less than three (3) inches, two (2) inches, one (1) inch, or half (1 / 2) inch from the edge of the substrate 212. The gas delivery system 220 includes a plurality of gas lines 222 and a gas ring 224, which will be described in more detail in the following sections of this disclosure. In one example, the gas lines 222 of the gas delivery system 220 enter the processing chamber 200 from the bottom of the processing chamber 200 (such as the base plate 204 or the base 206). In another example, the gas lines 222 of the gas delivery system 220 may enter the processing chamber 200 from the chamber wall 202.
[0033] A gas ring 224 may be mounted on a sleeve 226 surrounding the substrate support assembly 208. The gas ring 224 may also be coupled to a liner 230 of the substrate support assembly 208. The coupling between the gas ring 224 and the liner 230 is configured to prevent process gases from entering between the sleeve 226 and the liner 230. The plurality of gas lines 222 may be located in other parts of the processing chamber 200, such as the sleeve 226.
[0034] Processing chamber 200 may also include another gas delivery system 240. Gas delivery system 240 is configured to supply process gas to processing area 210 at locations different from those of gas delivery system 220. Gas delivery system 240 may be configured to supply the majority of the process gas to process the substrate, while gas delivery system 220 acts as an additional tuning knob to fine-tune processing parameters near the substrate edge. In one embodiment, gas delivery system 240 includes a gas source 242, a gas splitter 244, a central gas nozzle 246, and one or more side gas nozzles 248. Gas source 242 supplies process gas to gas splitter 244, which splits the process gas into two or more streams, and then supplies the two or more streams of process gas to central gas nozzle 246 and one or more side gas nozzles 248, respectively. Central gas nozzle 246 is located inside processing chamber 200, at a central point above processing area 210. One or more side gas nozzles 248 are disposed along the side wall of the processing chamber 200. In one embodiment, gas delivery systems 240 and 220 supply the same process gas to the processing chamber 200, but at different flow rates. In yet another embodiment, gas delivery systems 240 and 220 supply different process gases to the processing chamber 200.
[0035] Figure 3 A configuration of a gas delivery system 220 is illustrated according to an embodiment. The gas delivery system 220 includes a plurality of gas lines 222 configured to supply process gas to a gas ring 224. The gas ring 224 surrounds an inner space 318 housing a substrate 212. The plurality of gas lines 222 include a plurality of feed lines 302, 304, and 306 connected to the gas ring 224. The plurality of feed lines 302 to 306 can be connected to the gas ring 224 at any suitable location, such as the bottom surface, side surface, or top surface of the gas ring. The plurality of gas lines 222 may further include a main line 308 and a distribution line 310. The main line 308 is configured to couple a gas source to the distribution line 310, which distributes the process gas to the plurality of feed lines. According to an embodiment, the main line 308 has a larger diameter than the distribution line 310, which has a larger diameter than the feed lines 302 to 306. The number of feed lines is not limited. Figure 3 The three (3) feed lines shown can be 6, 12, or any other suitable number. In an embodiment, the gas delivery system 220 includes six (6) feed lines equidistantly arranged along the periphery of the gas ring 224.
[0036] A gas ring 224 is configured to release process gases close to the edge of the substrate 212. The gas ring 224 includes a plurality of gas outlets 312 disposed on an inner surface 314 of the gas ring 224. The size of the gas ring 224 is configured to be slightly larger than the size of the substrate 212. When the gas ring 224 is disposed adjacent to and around the substrate 212, the gas outlets 312 are close to the edge 316 of the substrate 212, such as less than a few inches. For example, the gas outlets 312 may be less than three inches, two inches, or one inch from the edge 316 of the substrate 212. The plurality of gas outlets 312 may be evenly distributed along the entire inner periphery of the gas ring 224. According to an embodiment, the angular spacing between adjacent gas outlets 312 may be less than six (6) degrees, three (3) degrees, two (2) degrees, or one (1) degree. The gas ring 224 may be made of aluminum, quartz, ceramic, or any other suitable material.
[0037] Figure 4 A perspective view of a gas delivery system 400 is shown according to an embodiment. The gas delivery system 400 has a gas line entering the processing chamber 200 from the bottom. The gas delivery system 400 includes a sleeve 226 ( Figure 2 The sleeve 226 contains six (6) feed lines 402 to 410. The feed lines 402 to 410 are arranged vertically. The sleeve 226 has a circular shape. The feed lines 402 to 410 may be equidistant from each other along the circumference of the sleeve 226. For example, the angular spacing between adjacent feed lines may be 60 degrees. The feed lines 402 to 410 enter the sleeve 226 from the bottom surface 420 and exit at the top surface 422 of the sleeve 226. Distribution lines 414 to 418 are arranged along the bottom surface 420 of the sleeve 226 and have a shape substantially consistent with the shape of the sleeve 226. In one example, each distribution line 414, 416, and 418 is coupled to two feed lines, such that the process gas is uniformly distributed to the two feed lines. In other examples, the distribution lines may be coupled to any suitable number of feed lines, such as three (3), four (4), five (5), or even greater. In this embodiment, the process gas flow in the delivery line 422 is equally split into two streams at the coupling point 424 where the distribution line 414 is coupled to the delivery line 422. The two streams will flow in opposite directions toward the feed lines 410 and 408 to the distribution line 414.
[0038] Figure 5A schematic cross-sectional view of the gas ring 224 is illustrated according to an embodiment. The gas ring 224 comprises two parts: an upper part 502 and a lower part 504. Each part has a substantially annular shape. In the embodiment, the upper part 502 and the lower part 504 are made of quartz and fused together. The gas ring 224 has a top surface 506, an outer surface 514, a bottom surface 522, and an inner surface 510. The gas ring 224 is disposed on the top surface 422 of the sleeve 226. The gas ring 224 is coupled to a feed line 302 to supply process gas to the inner space 318 surrounded by the gas ring 224. Figure 3 As shown in the image).
[0039] The upper portion 502 includes a plurality of gas outlets 508 disposed on an inner surface 510. The plurality of gas outlets 508 are distributed to cover the entire inner periphery of a gas ring 224. A network of gas channels (such as gas channel 622 shown in FIG. 6) is disposed within the gas ring 224 to supply process gas to the plurality of gas outlets 508. In one embodiment, an upper conduit 518 is coupled to a gas line 302 to supply process gas to the gas outlets 508. The upper conduit 518 includes a gas inlet 520 disposed on the bottom surface of the upper portion 502. The gas inlet 520 is coupled to a gas chamber 516 formed between the upper portion 502 and the lower portion 504. The gas chamber 516 has a diameter larger than the diameter of the gas inlet 520. The upper conduit 518 extends upward from the gas inlet 520 in an inwardly inclined direction. A plurality of inclined channels 536 are configured to couple the upper conduit 518 to the plurality of gas outlets 508. In one embodiment, each of the inclined channels 536 forms an angle with the top surface 506, the angle being in the range of three (3) degrees to ten (10) degrees.
[0040] The lower portion 504 includes a gas inlet 524 disposed at a bottom surface 522 and a gas outlet 526 disposed at a top surface 532 of the lower portion 504. A lower conduit 534 is disposed inside the lower portion 504 and extends between the gas inlet 524 and the gas outlet 526. The gas outlet 526 and the gas inlet 524 are aligned to avoid any obstruction to the flow of process gases. The lower conduit 534 and the upper conduit 518 are coaxially aligned. In one example, the diameter of the upper conduit 518 is larger than the diameter of the lower conduit 534. The lower conduit 534 extends upward from the gas inlet 524 in an inwardly inclined direction. In one example, the lower portion 504 includes components configured to interact with other parts of the substrate support assembly 208, such as the inner liner of a sleeve. Figure 2 The groove 512 is coupled as shown in the figure.
[0041] like Figure 5As shown, the feed line 302 may extend into the gas inlet 524. The inserted portion of the feed line 302 may include a gas seal 528 disposed in a slot to prevent process gas from leaking out of the gas inlet 524.
[0042] Figure 6a illustrates a schematic top view of the gas ring 600 according to an embodiment. Figure 6b illustrates a schematic configuration of the gas ring 600 according to reference diagram A according to an embodiment. As shown in Figure 6a, the gas ring 600 has an annular shape with a center 602. The gas ring 600 includes an annular body 618 surrounding an inner space 630. The annular body 618 includes a channel network 622 of gas passages to supply process gas into the inner space 630. The channel network 622 is configured to distribute process gas from the gas feed line to the gas passages in a balanced manner, and then to the gas outlet. According to an embodiment, the channel network 622 includes a plurality of circumferential gas passages 604, 606, 608, and 610, which are configured to distribute process gas along the circumferential direction of the annular body 618. The channel network 622 may also include a plurality of radial gas channels 624, 626 and 628 configured to couple circumferential gas channels 604, 606, 608 and 610.
[0043] According to one embodiment, the outer circumferential gas channel 604 is disposed along the outer periphery of the annular body 618. The outer circumferential gas channel 604 can form a complete annular channel along the outer periphery of the annular body 618. The outer circumferential channel 604 is formed within the lower portion 504. According to one embodiment, the plurality of circumferential gas channels 606, 608, and 610 are disposed in the upper portion 502 and have a smaller diameter than the gas channel 604.
[0044] Multiple gas inlets 612, 614, and 616 are coupled to an outer circumferential gas passage 604. In one example, the annular body 618 may include six (6) gas inlets. The annular body 618 may include any other suitable number of gas inlets, such as three (3), twelve (12), or thirty-six (36) gas inlets. The outer circumferential gas passage 604 balances the pressure of the process gases distributed by the multiple gas outlets.
[0045] According to one embodiment, the inner circumferential gas channel 606 is disposed along the inner periphery of the annular body 618. The inner circumferential gas channel 606 may also form a complete annular channel along the inner periphery of the annular body 618. The inner circumferential gas channel 606 is coupled to a plurality of gas outlets 508 via a plurality of gas channels 620. A more detailed description of the configuration between the inner circumferential gas channel and the gas outlets 508 will be provided later with reference to FIG6d. The plurality of gas outlets 508 may include 30, 60, 120, 240, 360, 720, or more gas outlets.
[0046] Circular gas channels 608 and 610 are positioned between the outer circumferential gas channel 604 and the inner circumferential gas channel 606. These intervening circumferential gas channels 608 and 610 comprise multiple channel segments arranged recursively and in an expanding manner. For example, as shown in FIG. 6b, gas channel 608 is arranged inward adjacent to the outer circumferential gas channel 604. In an embodiment, the six (6) segments of gas channel 608 may be evenly distributed along the annular body 618. Each segment may cover approximately thirty degrees along the circumferential direction of the annular body 618. Radial gas channels 626 are positioned at the midpoint of the segments of gas channel 608 and couple gas channel 608 to gas inlet 616. At both ends of gas channel 608, two radial channels 624 couple gas channel 608 to the midpoint of two segments of gas channel 610. Therefore, the number of segments of gas channel 610 is twelve (12), which is twice the number of segments of gas channel 608. At both ends of the gas passage 610, two radial gas passages 628 couple the gas passage 610 to the inner circumferential passage 606. Therefore, the gas passages 608 and 610 diffuse the process gas from one (1) gas inlet 616 located on the outer circumferential gas passage 604 to four (4) gas inlets located on the inner circumferential gas passage 606. In this embodiment, the angular spacing between adjacent gas inlets 616, 612, and 614 is 60 degrees, the angular spacing between adjacent radial passages 624 is 30 degrees, and the angular spacing between adjacent radial passages 628 is 15 degrees.
[0047] The annular body 618 further includes a plurality of gas channels 620 that couple the inner circumferential gas channel 606 to the plurality of gas outlets 608. In one example, the plurality of radial channels 620 are substantially oriented toward the center 602. In another example, the plurality of radial channels 624 and 628 may also be oriented toward the center 602.
[0048] According to the embodiment, the plurality of circumferential gas channels 604, 606, 608, and 610 are concentric around the center 602. The plurality of circumferential gas channels 604, 606, 608, and 610 are arranged along circles of different diameters. The size of the plurality of circumferential gas channels can gradually decrease from the outer circumferential channel 604 to the inner circumferential channel 606.
[0049] like Figure 5 The gas inlets 612, 614, and 616 shown in Figures 6a and 6b are positioned along the bottom surface of the annular body 618. Placing the gas inlets on the bottom surface of the annular body 618 allows the gas delivery lines to be embedded in other parts of the processing chamber (such as sleeves), such as... Figure 4 As shown in the diagram, the embedded gas lines are protected by other components and do not obstruct any flow of process gases within the processing chamber.
[0050] Figure 6c illustrates a cross-sectional view of the gas ring along line B-B' in Figure 6a according to an embodiment. Figure 6a shows the upper portion 632 and the lower portion 634, which may be fabricated separately and then fused together according to an embodiment. Since line B-B' is drawn across the gas inlet, it does not intersect with the circumferential gas channel 610. Therefore, only the radial gas channel 626, the circumferential gas channel 608, and the inner circumferential channel 606 are shown in Figure 6c. The radial gas channel 626, the circumferential gas channel 608, and the inner circumferential channel 606 are disposed within the upper portion 632. In an embodiment, gas channels 606, 608, and 626 have the same height and are substantially perpendicular to the top surface 638 of the upper portion 632.
[0051] The lower portion 634 includes a gas inlet 616 coupled to a gas chamber 654. The gas chamber 654 overlaps with a radial channel 626 and an outer circumferential gas channel 604. The lower portion 634 further includes a groove 652 configured to couple with another component of the substrate support assembly, such as a liner. In an embodiment, the lower portion 634 and the upper portion 632 are made of quartz and fused together to form an airtight seal where the two portions come into contact.
[0052] Figure 6d illustrates a cross-sectional view of the upper portion 632 of the gas ring along line C-C' in Figure 6a, according to an embodiment. Since line C-C' is drawn across the gas outlet 508 and all circumferential gas passages, the gas inlet and radial gas passages are not shown in Figure 6d. It should be noted that the outer circumferential gas passage 604 is located within the lower portion 634 and is not shown in Figure 6d.
[0053] As shown in Figure 6d, the inner circumferential gas channel 606 and circumferential gas channels 608 and 610 are disposed in the upper portion 632. Gas channel 620 couples gas outlet 508 to the inner circumferential gas channel 606. In an embodiment, gas channel 620 is inclined downward toward the lower portion 634. Therefore, gas channel 620 forms an acute angle 648 with the top surface 638 of the upper portion 632. For example, gas channel 620 may have a cylindrical shape having an axis 650. The axis 650 forms an acute angle with the top surface 638. The acute angle may be between three (3) degrees and ten (10) degrees.
[0054] Figure 7 A schematic bottom view of the upper portion of an annular body 700 having a gas inlet disposed along its outer surface is shown according to an embodiment. Similar to the annular body shown in Figures 6a and 6b, Figure 7 The upper portion 700 of the annular body is shown, which includes a plurality of circumferential gas channels 702 and 704 coupled to a plurality of radial gas channels 706. The upper portion 700 further includes a gas inlet 708 disposed along an outer surface 710. When the gas inlet 708 is disposed at the side surface 710, a gas delivery line can pass through the side wall of the processing chamber and connect directly to the gas inlet 708. Figure 7 The configuration simplifies the gas delivery path.
[0055] Figure 8 A gas delivery method 800 is illustrated according to an embodiment of this disclosure. In operation 802, a robotic arm conveys a substrate into a processing chamber and places the substrate on the surface of a substrate support assembly. The surface is located within an inner space surrounded by a gas ring disposed inside the processing chamber. In operation 804, a gas line supplies process gas to a gas inlet of the gas ring. The gas inlet is coupled to a network of gas channels disposed within the body of the gas ring. In operation 806, the process gas flows circumferentially and radially along the gas channel network to reach a plurality of gas outlets disposed along the inner periphery of the gas ring and close to the substrate. In operation 808, the process gas is released from the gas ring and flows toward the substrate through the plurality of gas outlets.
[0056] It is envisioned that one or more aspects disclosed herein may be combined. Furthermore, it is envisioned that one or more aspects disclosed herein may include some or all of the aforementioned benefits. While the foregoing describes embodiments of this disclosure, other and additional embodiments of this disclosure may be devised without departing from its essential scope, as defined by the foregoing claims.
Claims
1. A gas ring for supplying process gas to a processing chamber, the gas ring comprising: An annular body surrounding an inner space configured to accommodate a substrate; A gas channel network is disposed within the annular body and includes multiple circumferential gas channels coupled to multiple radial gas channels, the multiple circumferential gas channels being concentrically arranged around the center of the annular body; Multiple gas inlets, the multiple gas inlets being coupled to the network of gas channels; as well as Multiple gas outlets are coupled to the network of gas channels and disposed along the inner surface of the annular body.
2. The gas ring of claim 1, wherein the gas ring further comprises a plurality of inclined channels, the plurality of inclined channels coupling the plurality of gas outlets to the gas channel network and forming an acute angle with the top surface of the annular body.
3. The gas ring as claimed in claim 1, wherein the plurality of circumferential gas channels include an inner circumferential gas channel, the inner circumferential gas channel being arranged along the inner periphery of the annular body and forming a circle.
4. The gas ring as claimed in claim 3, wherein the plurality of circumferential gas channels include an outer circumferential gas channel, the outer circumferential gas channel being arranged along the outer periphery of the annular body and forming a circle.
5. The gas ring of claim 1, wherein the plurality of radial gas channels extend radially toward the center of the annular body.
6. The gas ring of claim 5, wherein the plurality of circumferential gas channels comprise a plurality of segments, and the plurality of radial gas channels are coupled to the end or midpoint of each segment.
7. The gas ring as claimed in claim 1, wherein the plurality of gas inlets are uniformly arranged along the outer surface of the annular body, or the plurality of gas inlets are uniformly arranged along the bottom surface of the annular body.
8. The gas ring of claim 1, wherein the annular body comprises an upper portion coupled to the lower portion.
9. The gas ring of claim 8, wherein the plurality of gas outlets are disposed on the upper portion.
10. The gas ring of claim 8, wherein the plurality of circumferential gas channels includes an inner circumferential channel disposed within the upper portion.
11. The gas ring of claim 8, wherein the lower portion includes the plurality of gas inlets and a plurality of conduits coupling the plurality of gas inlets to the network of gas passages.
12. The gas ring of claim 11, wherein the annular body includes a gas chamber formed between the upper portion and the lower portion, and the plurality of conduits are coupled to the gas chamber.
13. The gas ring of claim 8, wherein the lower portion further includes a groove disposed on the bottom surface of the lower portion and configured to couple with another component of the processing chamber.
14. The gas ring of claim 1, wherein the plurality of gas outlets are configured to release the process gas at a location less than three (3) inches from the edge of the substrate.
15. A processing chamber for processing a substrate, the processing chamber comprising: Substrate support assembly, the substrate support assembly being configured to support a substrate; and A gas delivery system configured to deliver process gases to the substrate, wherein the gas delivery system includes a gas ring comprising: An annular body surrounding an inner space for accommodating the substrate; A gas channel network is disposed within the annular body and includes multiple circumferential gas channels coupled to multiple radial gas channels, the multiple circumferential gas channels being concentrically arranged around the center of the annular body; Multiple gas inlets, the multiple gas inlets being coupled to the network of gas channels; as well as Multiple gas outlets are coupled to the network of gas channels and disposed along the inner surface of the annular body.
16. The processing chamber of claim 15, wherein the substrate support assembly includes a liner configured to protect the substrate support assembly, and the air ring is coupled to the liner.
17. The processing chamber of claim 15, wherein the substrate support assembly includes a sleeve, and the gas delivery system includes a plurality of gas lines disposed within the sleeve.
18. The processing chamber of claim 15, wherein the gas delivery system comprises a plurality of gas lines coupled to the gas ring along the outer surface of the annular body.
19. The processing chamber of claim 15, wherein the plurality of circumferential gas channels extend along the circumferential direction of the annular body, and the plurality of radial gas channels extend radially toward the center of the annular body.
20. A gas delivery method for supplying process gas to a processing chamber, the method comprising: The substrate is transferred to an inner space surrounded by an air ring, which is located inside the processing chamber. Process gas is supplied to the gas inlet of the gas ring, the gas inlet being coupled to a network of gas channels disposed within the body of the gas ring; The process gas is allowed to flow circumferentially and radially along the network of gas channels to reach a plurality of gas outlets disposed along the inner surface of the gas ring and near the edge of the substrate; and The process gas is released toward the edge of the substrate through the plurality of gas outlets.