Substrate processing apparatus and tray

Abstract

In a substrate processing apparatus, adhesive consumption in a support member supporting a substrate is efficiently suppressed. The substrate processing apparatus includes: a processing chamber; and a support member disposed within the processing chamber, having a tray support surface on its upper surface for supporting a tray. The support member includes: an electrostatic chuck with internally included electrostatic electrodes for adsorbing and supporting the tray; a base for supporting the electrostatic chuck; and a bonding layer for bonding the electrostatic chuck to the base. The substrate processing apparatus includes a protective unit for protecting the bonding layer.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a tray for holding substrates. Background Technology

[0002] Patent Document 1 discloses a substrate processing system in which a wafer, which is the substrate to be processed, and an edge ring arranged around the wafer are electrostatically adsorbed onto a tray having a disk shape, and then transported to a processing module in this state. Furthermore, in the substrate processing system described in Patent Document 1, the wafer and the edge ring are placed on a base within the processing module via the tray, and plasma processing such as etching is performed in this state.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-34390 Summary of the Invention

[0006] The technology disclosed herein aims to efficiently suppress adhesive consumption in the support components supporting the substrate in a substrate processing apparatus.

[0007] One aspect of this disclosure is a substrate processing apparatus for processing substrates, comprising: a processing chamber; and a support member disposed within the processing chamber, having a tray support surface on its upper surface for supporting a tray, the support member comprising: an electrostatic chuck having internally included an electrostatic electrode for adsorbing and supporting the tray; a base for supporting the electrostatic chuck; and a bonding layer for bonding the electrostatic chuck to the base, the substrate processing apparatus comprising a protective unit for protecting the bonding layer.

[0008] Invention Effects

[0009] In a substrate processing apparatus, adhesive consumption in the support components supporting the substrate is effectively suppressed. Attached Figure Description

[0010] Figure 1 This is a top view schematically illustrating an example of the configuration of a wafer processing system.

[0011] Figure 2 This is a cross-sectional view schematically illustrating an example of the configuration of a wafer processing module.

[0012] Figure 3 It is a diagram illustrating the wafer processing flow in a wafer processing system.

[0013] Figure 4 This is a cross-sectional view schematically illustrating an example of the tray configuration involved in this embodiment.

[0014] Figure 5 This is a cross-sectional schematic diagram illustrating the spacers installed on the tray.

[0015] Figure 6 This is a cross-sectional schematic diagram illustrating another method of mounting wafers on a tray.

[0016] Figure 7 This is a schematic cross-sectional view illustrating another example of a pallet configuration.

[0017] Figure 8 This is a schematic cross-sectional view illustrating another example of a pallet configuration.

[0018] Figure 9 This is a schematic cross-sectional view illustrating another example of a pallet configuration.

[0019] Figure 10 This is a schematic cross-sectional view illustrating another example of a pallet configuration.

[0020] Figure 11 This is a schematic cross-sectional view illustrating another example of a pallet configuration.

[0021] Figure 12 This is a cross-sectional view schematically showing an example of the configuration of a tray including ribs.

[0022] Figure 13 This is a schematic diagram illustrating the transport of a pallet containing ribs.

[0023] Figure 14 This is a cross-sectional view schematically illustrating an example of the fluid supply section configuration in a wafer processing module.

[0024] Figure 15 This is a cross-sectional view schematically illustrating an example of the fluid supply section configuration in a wafer processing module.

[0025] Figure 16 This is a cross-sectional view schematically illustrating an example of the fluid supply section configuration in a wafer processing module.

[0026] Figure 17 This is an explanatory diagram illustrating an example of the support structure of a support structure.

[0027] Figure 18 This is an illustrative diagram showing an example of a method for mounting / separating wafers relative to a tray.

[0028] Figure 19 This is an illustrative diagram showing an example of a method for separating a wafer from a tray.

[0029] Figure 20 This is an illustrative diagram showing an example of a method for separating a wafer from a tray.

[0030] Figure 21This is an illustrative diagram showing an example of a method for separating a wafer from a tray.

[0031] Figure 22 This is an illustrative diagram showing an example of a method for separating a wafer from a tray.

[0032] Figure 23 This is a schematic cross-sectional view illustrating another example of a pallet configuration.

[0033] Figure 24 This is a schematic cross-sectional view illustrating another example of a pallet configuration.

[0034] Figure 25 This is a schematic cross-sectional view illustrating another example of a pallet configuration.

[0035] Figure 26 This is an illustrative diagram showing an example of a pallet conveying method.

[0036] Figure 27 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0037] Figure 28 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0038] Figure 29 This is an illustrative diagram showing an example of control using the sheath of an electrostatic chuck.

[0039] Figure 30 This is an illustrative diagram showing an example of control using the sheath of an electrostatic chuck.

[0040] Figure 31 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0041] Figure 32 This is a perspective view showing an example of the configuration of a locking mechanism that secures the tray to the support component.

[0042] Figure 33 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0043] Figure 34 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0044] Figure 35 This is a cross-sectional view schematically illustrating an example of a method for detaching a tray from a support member.

[0045] Explanation of reference numerals in the attached figures

[0046] 7: Wafer processing module; 10: Plasma processing chamber; 11: Support component; 12: Base; 13: Electrostatic chuck; 16: Bonding layer; 200: Rib component; 202: Rib; T: Tray; Tw: (Wafer-loaded) tray; W: Wafer. Detailed Implementation

[0047] In the manufacturing process of semiconductor devices, various plasma treatments are performed on semiconductor substrates (hereinafter sometimes referred to as "wafers"), such as etching, film deposition, and diffusion. In these plasma treatments, in order to obtain in-plane uniform processing results on the wafer, it is important to ensure the uniformity of temperature and electric field, including the outer periphery of the wafer, for the wafer being processed.

[0048] In a substrate processing system, when a wafer and its edge ring, which are the substrate to be processed, are held on a disk-shaped tray and transported to a processing module for plasma processing in this state, it is desirable to improve temperature uniformity and electric field uniformity, including the outer periphery of the wafer that is not in direct contact with the substrate. Furthermore, when the wafer processing is an etching process performed as plasma processing, it is desirable to control the tilt of the outermost periphery of the wafer W.

[0049] When the wafer processing in a substrate processing system is plasma processing, it is known that the structure of the support component for supporting the wafer includes a stage and an electrostatic chuck, the electrostatic chuck comprising a ceramic component made of a dielectric. That is, it has a structure in which the electrostatic chuck, made of a dielectric, is bonded to the upper surface of the stage by a bonding layer (adhesive). When plasma processing is performed with the tray holding the wafer placed on the support component, if the bonding layer (adhesive) is not properly protected from the plasma, the outer periphery of the bonding layer (adhesive) will be exposed to the plasma, and ions or free radicals will cause the adhesive to be consumed.

[0050] When the aforementioned bonding layer (adhesive) is consumed, the thermal resistance between the stage and the electrostatic chuck (dielectric) increases, leading to a rise in temperature on the outer periphery of the supported wafer or tray, which may prevent the achievement of in-plane uniform processing results on the wafer. Furthermore, variations in the gap between the electrostatic chuck and the stage may cause abnormal discharges. As a result, the lifespan of components such as support parts may be shortened.

[0051] The technology disclosed herein was developed in view of the above circumstances, and aims to efficiently suppress adhesive consumption in the support members supporting the substrate in the substrate processing apparatus. Hereinafter, a wafer processing system having a wafer processing module according to this embodiment will be described with reference to the accompanying drawings. In this specification and drawings, elements having substantially the same functional configuration are omitted from repeated description by using the same reference numerals.

[0052] <Composition of a Wafer Processing System>

[0053] Figure 1 This is a top view schematically showing the general structure of the wafer processing system 1.

[0054] In wafer processing system 1, various processes are performed on a wafer W, which serves as a substrate. Wafer W is an example of a substrate. Wafer W is, for example, a semiconductor wafer such as a semiconductor substrate, and in one embodiment, a device layer (not shown) containing multiple devices is formed on its surface. In the wafer processing system 1 according to this embodiment, the wafer W to be processed is transported and processed while placed on a tray T described later (see reference). Figure 2 The wafer W is mounted on the tray T with the surface where the device layer is formed facing upwards. Hereinafter, for the sake of simplicity, the tray T holding the wafer W transported and processed in the wafer processing system 1 will sometimes be referred to as "tray Tw". The detailed structure of the tray T will be described later.

[0055] In the following embodiments, as described above, the case in which a device layer is formed on the surface of wafer W is used as an example, but wafer W does not necessarily have to be a device wafer with a device layer formed.

[0056] like Figure 1 As shown, the wafer processing system 1 comprises an atmospheric transport module 2 and a vacuum transport module 3 integrally connected by a loading interlock module 4. The atmospheric transport module 2 transports the tray Tw under atmospheric conditions. The vacuum transport module 3 transports the tray Tw under a vacuum (reduced pressure) atmosphere.

[0057] The loading interlock module 4 has one or more loading interlock chambers 4a (for example, two in this embodiment). The loading interlock chamber 4a is configured to connect the internal space of the atmospheric transport module 2 and the internal space of the vacuum transport module 3 through a transport port. The transport port is configured to be freely openable and closable via a gate valve 4b.

[0058] The loading interlock module 4 is configured to temporarily hold the tray Tw. Furthermore, the loading interlock module 4 is configured to switch its internal environment between atmospheric and depressurized (vacuum) atmospheres. That is, the loading interlock module 4 is configured to appropriately transfer the tray Tw between the atmospheric transport module 2 (atmospheric atmosphere) and the depressurized vacuum transport module 3 (vacuum).

[0059] The atmospheric conveying module 2 consists of a rectangular frame, the interior of which is maintained in an atmospheric atmosphere. Multiple (e.g., three) loading ports 5 are connected side-by-side on one side of the long side of the atmospheric conveying module 2 in the negative Y-axis direction. Two loading interlock chambers 4a are connected side-by-side on the other side of the long side of the atmospheric conveying module 2 in the positive Y-axis direction. Furthermore, the atmospheric conveying module 2 can be further connected to an orienting module (not shown) for adjusting the horizontal orientation of the tray Tw, or a storage module (not shown) for storing multiple trays Tw, etc.

[0060] Loading port 5 is equipped with a front-opening wafer transfer box F capable of accommodating multiple trays Tw. Above the wafer processing system 1, there is a ceiling transport mechanism (OHT: not shown) that can move freely along a track configured on the ceiling of the cleanroom where the wafer processing system 1 is located. The front-opening wafer transfer box F accesses the wafer processing system 1 through the ceiling transport mechanism and is handed over to loading port 5.

[0061] Furthermore, a first conveying mechanism 6 for the conveying tray Tw is provided inside the atmospheric conveying module 2. The first conveying mechanism 6 is configured to convey the tray Tw between the front-opening wafer transfer box F of the loading port 5 and the loading interlock chamber 4a of the loading interlock module 4. The configuration of the first conveying mechanism 6 is not particularly limited.

[0062] The vacuum transport module 3 is constructed of a planar rectangular frame, the interior of which is maintained in a vacuum (reduced pressure) atmosphere. Multiple (e.g., four) wafer processing modules 7 are connected to the side of the vacuum transport module 3. The internal space of the wafer processing module 7 communicates with the internal space of the vacuum transport module 3 through a transport port. The transport port is configured to be freely openable and closable via a gate valve 7a. Furthermore, the number and configuration of the wafer processing modules 7 are not limited to this embodiment and can be arbitrarily set.

[0063] Furthermore, a second conveying mechanism 8 is provided inside the vacuum conveying module 3 for conveying the tray Tw. The second conveying mechanism 8 is configured to convey the tray Tw between the loading interlock chamber 4a of the loading interlock module 4 and one or more wafer processing modules 7. The configuration of the second conveying mechanism 8 is not particularly limited.

[0064] In one example, the wafer processing module 7, which serves as a substrate processing device, performs plasma processing such as etching on the wafer W placed on the tray T. Figure 2 This is a diagram illustrating an example of a capacitor-coupled plasma processing device for the wafer processing module 7.

[0065] The wafer processing module 7, as a capacitively coupled plasma processing apparatus, includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Furthermore, the wafer processing module 7 includes a support member 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a nozzle 15. The support member 11 is disposed within the plasma processing chamber 10. The nozzle 15 is disposed above the support member 11. In one embodiment, the nozzle 15 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the nozzle 15, the sidewall 10a of the plasma processing chamber 10, and the support member 11. The plasma processing chamber 10 is grounded. The nozzle 15 and the support member 11 are electrically insulated from the frame of the plasma processing chamber 10.

[0066] The support component 11 includes a base 12, an electrostatic chuck 13, and a lifter 14. The base 12 includes conductive components. The conductive components of the base 12 can function as a lower electrode. The electrostatic chuck 13 is disposed on the base 12. In one embodiment, a bonding layer 16, acting as an adhesive, can be formed between the electrostatic chuck 13 and the base 12. The bonding layer 16 can be, for example, an acrylic resin, silicone (silicone resin), epoxy resin, etc. Alternatively, the bonding layer 16 can also be a metal bonding layer. The metal bonding layer is, for example, a bonding layer formed by brazing. The electrostatic chuck 13 includes a ceramic component 13a and an electrostatic electrode 13b disposed within the ceramic component 13a. The ceramic component 13a is made of dielectric material and has a tray support surface for supporting the tray Tw. The electrostatic chuck 13 containing the ceramic component 13a constitutes a tray support portion. In one embodiment, the diameter of the tray support surface of the ceramic component 13a is larger than the diameter of the wafer W placed on the tray T, and smaller than or approximately the same as the diameter of the tray T.

[0067] Furthermore, at least one radio frequency (RF) / DC electrode coupled to the RF power supply 31 and / or DC power supply 32 (described later) may be disposed within the ceramic component 13a. In this case, the at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal (described later) are supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Additionally, the conductive components of the base 12 and the at least one RF / DC electrode can function as multiple lower electrodes. Furthermore, the electrostatic electrode 13b can also function as a lower electrode. Therefore, the support component 11 includes at least one lower electrode.

[0068] The lifting device 14 has a plurality of (three in this embodiment) lifting pins 14a and an actuator 14b serving as a drive mechanism for moving the lifting pins 14a longitudinally. In each of the base 12 and the electrostatic chuck 13, a plurality of (three in this embodiment) through holes 12h and 13h are formed, extending in the thickness direction, into which the lifting pins 14a of the lifting device 14 are respectively inserted. An example of the actuator 14b includes an electric actuator, a cylinder, a motor, etc.

[0069] Furthermore, the lifter 14 moves the lifting pin 14a axially (longitudinally) via the actuator 14b, thereby raising and lowering the tray Tw on the electrostatic chuck 13. This causes the tray Tw to move between the handover height with the second conveying mechanism 8 and the processing height for wafer processing on the electrostatic chuck 13.

[0070] Furthermore, the support member 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 13, the tray T, and the wafer W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 12a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows in the flow path 12a. In one embodiment, the flow path 12a is formed within the base 12, and one or more heaters are disposed within the ceramic component 13a of the electrostatic chuck 13. Additionally, the support member 11 may include a gas supply section configured to supply gas (e.g., nitrogen (N2)) into the gap between the back surface of the tray T and the tray support surface of the electrostatic chuck 13. This gas supply section may be shared with the gas supply section 20 described later.

[0071] The nozzle 15 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The nozzle 15 has at least one gas supply port 15a, at least one gas diffusion chamber 15b, and a plurality of gas inlets 15c. The process gas supplied to the gas supply port 15a passes through the gas diffusion chamber 15b and is introduced into the plasma processing space 10s through the plurality of gas inlets 15c. Furthermore, the nozzle 15 includes at least one upper electrode. In addition to the nozzle 15, the gas inlet unit may also include one or more side gas injection units (SGIs) installed in one or more openings formed in the sidewall 10a.

[0072] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from its respective gas source 21 to the nozzle 15 via its respective flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsed the flow rate of the at least one process gas.

[0073] The power supply 30 includes a radio frequency (RF) power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least part of the plasma generation unit. Furthermore, by supplying a bias RF signal to at least one lower electrode to generate a bias potential on the wafer W, ionic components in the generated plasma can be attracted to the wafer W.

[0074] In one embodiment, the radio frequency (RF) power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for generating plasma. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0075] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the source RF signal frequency. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0076] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0077] In various embodiments, the first DC signal and the second DC signal can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating the voltage pulse sequence from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can be positive or negative. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Additionally, the first DC generation unit 32a and the second DC generation unit 32b can be separately provided based on the RF power supply 31, or the first DC generation unit 32a can be provided instead of the second RF generation unit 31b.

[0078] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0079] The wafer processing module 7 is configured as described above in one example, but its configuration is not limited to this.

[0080] For example, in Figure 2The example shown illustrates the case where the plasma generation unit of the wafer processing module 7 generates capacitively coupled plasma (CCP). However, the plasma generated by the plasma generation unit can also be inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-Resonance Plasma), HeliconWave Plasma (HWP), or Surface Wave Plasma (SWP), etc. Furthermore, various types of plasma generation units, including alternating current (AC) plasma generation units and direct current (DC) plasma generation units, can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes radio frequency (RF) signals and microwave signals. In one embodiment, the radio frequency signal has a frequency in the range of 100 kHz to 150 MHz.

[0081] return Figure 1 Explanation.

[0082] The above-mentioned wafer processing system 1 is as follows Figure 1A control unit 9 is shown. The control unit 9 processes computer-executable instructions that cause the wafer processing system 1 to execute the various processes described herein. The control unit 9 can be configured to control the various components of the wafer processing system 1 to execute the various processes described herein. In one embodiment, part or all of the control unit 9 may be included in the wafer processing system 1. The control unit 9 may include a processing unit 9a1, a storage unit 9a2, and a communication interface 9a3. The control unit 9 is implemented, for example, by a computer 9a. The processing unit 9a1 can be configured to read a program from the storage unit 9a2 and perform various control operations by executing the read program. The program may be pre-stored in the storage unit 9a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 9a2 and read and executed by the processing unit 9a1 from the storage unit 9a2. The medium may be various storage media readable by the computer 9a, or a communication line connected to the communication interface 9a3. The processing unit 9a1 may be a central processing unit (CPU). Storage unit 9a2 may include random access memory (RAM), read-only memory (ROM), hard disk drive (HDD), solid-state drive (SSD), or a combination thereof. Communication interface 9a3 can communicate with wafer processing system 1 via a communication line such as a local area network (LAN). Furthermore, the aforementioned storage medium may be temporary or non-temporary.

[0083] <Processing flow in a wafer processing system>

[0084] Next, the wafer processing performed using the wafer processing system 1 configured as described above will be explained according to the transport process of tray Tw. Figure 3 This diagram illustrates the main processes involved in wafer processing. Furthermore, as described above, the following explanation uses the case where wafer W is a device wafer with a device layer formed on its surface as an example; however, wafer W may not have a device layer formed on it.

[0085] First, before conveying the front-opening wafer transfer cassette F to the wafer processing system 1, a mounting device (not shown) located outside the wafer processing system 1 is used to mount the wafer W to be processed onto the tray T, preparing the tray Tw (containing the wafer W) for mounting. Figure 3 Step S1). At this time, the wafer W is mounted on the tray T with the surface where the device layer is formed facing upwards. The tray Tw with the wafer W is stored in the front-opening wafer transfer box F. Figure 3Step S2). In the front-opening wafer transfer box F, the tray Tw is stored with the wafer support side of the wafer W facing upwards.

[0086] Next, the front-opening wafer transfer box F, containing multiple trays Tw, is transported by an overhead conveyor (OHT) (not shown) and mounted on the loading port 5 of the wafer processing system 1. Figure 3 Step S3). Next, the first conveying mechanism 6 removes the tray Tw from the front-opening wafer transfer box F and conveys it to a wafer processing module 7 via the loading interlock chamber 4a of the loading interlock module 4 and the second conveying mechanism 8. In the wafer processing module 7, the back side of the tray Tw carrying the wafer W (the side opposite to the wafer support surface on which the wafer W is placed) is held by suction on the electrostatic chuck 13 of the support member 11. Figure 3 Step S4). In addition, for example, when the weight of the tray Tw is sufficient to bring the wafer W into contact with the support member 11 and sufficiently cool the wafer W, it is not necessary to use the electrostatic chuck 13 for electrostatic adsorption.

[0087] In wafer processing module 7, any processing corresponding to the purpose of wafer processing is performed, such as plasma processing like etching. Figure 3 Step S5).

[0088] Specifically, for example, after the wafer W is loaded, the interior of the plasma processing chamber 10 is depressurized to a desired vacuum level, and then the desired processing gas is supplied to the plasma processing space 10s. Afterwards, at least one radio frequency signal (radio frequency power) is supplied to at least one lower electrode and / or at least one upper electrode via the radio frequency power supply 31 to excite the processing gas to generate plasma. Then, the wafer W is plasma-processed by the action of the plasma thus generated. At this time, the plasma processing of the wafer W is performed while the wafer W is placed on the tray T.

[0089] After the desired wafer processing is performed on wafer W, the second conveyor mechanism 8 removes the tray Tw from the wafer processing module 7. The tray Tw removed from the wafer processing module 7 is then returned to the front-opening wafer transfer box F via the loading interlock chamber 4a of the loading interlock module 4 and the first conveyor mechanism 6. Figure 3 Step S6).

[0090] The front-opening wafer transfer box F, which houses the processed wafer W, is then removed from the wafer processing system 1 by an overhead conveyor (OHT) mechanism (not shown). Figure 3 Step S7).

[0091] Subsequently, in a separation device (not shown) located outside the wafer processing system 1, the tray T is separated from the wafer W. Figure 3(Step S8). Thus, the series of wafer processing using wafer processing system 1 is completed.

[0092] According to this embodiment, as described above, with the wafer W to be processed mounted on the tray T, the wafer is transported in the wafer processing system 1 and processed in the wafer processing module 7 in sequence.

[0093] Additionally, in the above explanation, such as Figure 3 As shown, the example described is of pre-loading wafers W onto trays T outside the wafer processing system 1; in other words, of moving trays Tw into the wafer processing system 1. However, loading wafers W onto trays T does not necessarily have to be done outside the wafer processing system 1; it can also be done inside the wafer processing system 1. In this case, front-opening wafer transfer boxes F containing multiple trays T and front-opening wafer transfer boxes F containing multiple wafers W are moved into the wafer processing system 1, for example, in a loading device (not shown) / separation device (not shown) connected to the atmospheric transport module 2, where the loading / separation of wafers W relative to trays T is performed. Furthermore, the loading device and separation device can be configured independently, and the loading / separation of wafers W relative to trays T can be performed in different devices, or the loading device and separation device can be integrated into one unit, and the loading / separation of wafers W relative to trays T can be performed in the same device.

[0094] <Detailed structure of the tray>

[0095] Next, the detailed structure of the tray T that carries the wafer W will be explained. Figure 4 This is a schematic cross-sectional view illustrating an example of the configuration of the tray T, showing its arrangement above the support member 11 of the wafer processing module 7. Additionally, in Figure 4 For the sake of simplicity, the through holes 12h and 13h are omitted in the diagram.

[0096] like Figure 4 As shown, the tray T has a generally circular shape. In the cross-sectional view, the thickness of the central portion is less than the thickness of the outer peripheral portion, resulting in a concave cross-sectional shape. Hereinafter, the central portion of the tray T with the smaller thickness in the cross-sectional view will be referred to as the "circular plate portion 101," and the outer peripheral portion of the tray T with the larger thickness in the cross-sectional view will be referred to as the "annular portion 102." Furthermore, the concave cross-sectional shape formed by the circular plate portion 101 and the annular portion 102 is sometimes referred to as the "recess 103." In addition, the tray T has: a first heat transfer material 104 disposed between the wafer W and the upper surface of the circular plate portion 101 when the wafer W is stored; and a second heat transfer material 105 disposed between the tray mounting surface and the lower surface of the circular plate portion 101 when the tray is placed on the tray mounting surface of the electrostatic chuck 13.

[0097] The circular plate portion 101 is, for example, made of at least one material selected from Si, SiC, SiN, C, SiO2, Al2O3, Y2O3, YOF, W, Ti, TiN, ZeO2, and green sheet. Therefore, the circular plate portion 101 can be made of a conductive material or an insulating material. Furthermore, the relative permittivity of the circular plate portion 101 can be 8.0 or less. Additionally, the volume resistivity of the circular plate portion 101 can be, for example, 1 × 10⁻⁶ when the electrostatic chuck 13 is of the JR (Johnsen-Rahbek) type. 12 [Ω·cm] and below, when it is a coulomb type, it can be 1×10 13 [Ω·cm] or more.

[0098] The diameter r1 of the circular plate portion 101 is formed to be slightly larger than the diameter r3 of the wafer W, so that the wafer W can be housed inside it. Therefore, the circular plate portion 101 of the tray T has a wafer mounting surface for supporting the wafer W, and the tray T has a recess 103 for housing the wafer W. When the wafer W is placed on the wafer mounting surface, the gap G (the difference between diameter r1 and diameter r3) generated between the outer end of the wafer W and the inner circumferential surface of the annular portion 102 is preferably 0.1 mm or less. Furthermore, in order to efficiently cool the wafer W as described later, the diameter r1 of the circular plate portion 101 is preferably smaller than or equal to the diameter r4 of the support member 11 (electrostatic chuck 13) that holds the tray Tw in the wafer processing module 7.

[0099] In addition, the thickness t1 of the circular plate portion 101 is not particularly limited, but it is preferably set to a thickness that can efficiently cool the wafer W as described later and ensure the mechanical strength of the tray T.

[0100] The annular portion 102 is made of at least one material selected from Si, SiC, SiN, C, SiO2, Al2O3, Y2O3, YOF, W, Ti, TiN, ZeO2, and green wafers. It can be made of the same material as the circular plate portion 101 or a different material. Therefore, the annular portion 102 can be made of a conductive material or an insulating material. However, when the annular portion 102 is used as an edge ring in plasma processing as described later, it can be made of a material comparable to conventional edge rings. Furthermore, the relative permittivity and volume resistivity of the annular portion 102 are preferably comparable to those of the wafer W.

[0101] The thickness t2 of the annular portion 102 can be appropriately varied depending on the purpose of wafer processing. Therefore, the height of the upper surface of the annular portion 102 can be greater than, less than, or equal to the height of the upper surface of the wafer W. In one example, the thickness t2 of the annular portion 102 is 3 mm to 5 mm. Furthermore, during plasma processing in the wafer processing module 7, the annular portion 102 is configured to surround the wafer W held on the circular plate portion 101, also functioning as an edge ring (also called a focusing ring) to reduce the non-uniformity of the plasma processing. Therefore, the thickness t2 and width r2 of the annular portion 102 can be configured to be approximately the same as the thickness and width of an edge ring (not shown) conventionally used in plasma processing.

[0102] The overall diameter of the tray T (i.e., the outer diameter of the annular portion 102, i.e., diameter r1 + width r2) can be greater than or equal to the diameter r4 of the support member 11 (electrostatic chuck 13) that holds the tray Tw in the wafer processing module 7 (diameter r1 + width r2 ≥ diameter r4). In this case, by making the tray T larger than the support member 11, the surface of the support member 11 (electrostatic chuck 13) can be suppressed from being exposed to plasma during plasma processing in the wafer processing module 7. Therefore, the consumption of the support member 11 can be reduced, and the time and frequency required for maintenance of the wafer processing module 7 can be reduced.

[0103] Furthermore, as described above, a gap G exists between the outer end of the wafer W and the inner circumferential surface of the annular portion 102. During plasma processing in the wafer processing module 7, the corner of the recess 103 may be exposed to plasma at the location where this gap G is formed. In this case, depending on the material of the tray T, the corner is prone to wear, potentially leading to a shortened lifespan of the tray T or the formation of particles. Moreover, it is known that wear is more likely to occur when the corner is a right angle.

[0104] Therefore, in order to suppress consumption at the corner of the recess 103, the corner shape is not made to be a right angle, but can be used to fill the space between the wafer W and the tray T. Specifically, for example, Figure 5 As shown, a spacer 106 with a rounded corner shape is preferably provided at the corner 103a of the recess 103. Alternatively, although not shown, a spacer matching the shape of the outer end of the wafer W can be used instead of a rounded corner shape. In this case, the spacer 106 is composed of at least a plasma-resistant component. By providing the spacer 106 at the corner 103a in this way, exposure of the corner 103a to plasma during plasma processing in the wafer processing module 7 is suppressed, thereby preventing shortening of the tray T's lifespan and particle generation.

[0105] In addition, the spacer 106 disposed at the corner 103a, besides as Figure 5In addition to being separately constructed from the tray T (circular plate portion 101 and annular portion 102) as shown, it can also be integrally constructed with at least one of the circular plate portion 101 or the annular portion 102, although not shown.

[0106] In addition, Figure 4 and Figure 5 In the example shown, the wafer W is held on the circular plate portion 101 of the tray T, but it can also be held as follows: Figure 6 As shown, a stepped portion 107 for holding the outer periphery of the wafer W is provided on the annular portion 102, and the wafer W is held on the stepped portion 107. Alternatively, the wafer W can be held on the stepped portion 107 instead of the stepped portion 107. Figure 5 The spacer 106 shown. In other words, the spacer 106 may have a rectangular cross-sectional shape and form a stepped portion 107 for holding the outer periphery of the wafer W.

[0107] In this case, although a gap will be generated between the back side of the wafer W and the circular plate portion 101 of the tray T, the wafer W can be properly cooled as described later by filling the gap with the first heat transfer material 104 described later.

[0108] In addition, Figure 4 The illustration shows an example where the circular plate portion 101 and the ring portion 102 of the tray T are integrally constructed from the same material, but the construction of the tray T is not limited to this.

[0109] Specifically, for example, it can be unlike Figure 4 Instead of integrally forming the circular plate portion 101 and the annular portion 102 as shown, the circular plate portion 101 and the annular portion 102 are formed separately and then bonded together to form the tray T. In this case, the circular plate portion 101 and the annular portion 102 can be bonded using, for example, adhesive sheets or adhesives, or mechanically or chemically joined. Furthermore, the circular plate portion 101 and the annular portion 102 can be... Figure 7 The materials shown are different, but although not illustrated, they could also be made of the same materials.

[0110] The circular plate portion 101 and the annular portion 102 of the tray T can be integrally formed or can be separately formed. In one embodiment, such as Figure 8As shown, the diameter r1 of the circular plate portion 101 and the outer diameter of the annular portion 102 can be made the same, and the tray T can be formed such that the annular portion 102 is disposed on the upper surface of the circular plate portion 101. In this case, the circular plate portion 101 is configured as a base for placing the wafer W in its center, and has a mounting surface (ring mounting surface) of the annular portion 102 as an edge ring on its upper surface. In this case, the annular portion 102 as a peripheral portion is mounted on the upper surface of the circular plate portion 101 as the base, and a recess 103 for receiving the wafer W is formed. That is, the circular plate portion 101 as the base and the annular portion 102 as the peripheral portion can be separately constructed. In this case, the circular plate portion 101 and the annular portion 102 can be made of different materials. Furthermore, in this case, a conventional edge ring can be used as the annular portion 102.

[0111] In addition, Figure 4 , Figure 7 and Figure 8 In this process, the circular plate portion 101 and the annular portion 102 are each composed of a single component, but at least one of the circular plate portion 101 and the annular portion 102 can be configured as follows: Figure 9 As shown, it is composed of two or more stacked components. In this case, the stacked components can be arranged as follows: Figure 9 The materials shown are different, but although not illustrated, they could also be the same material.

[0112] In addition, Figure 4 and Figures 7-9 The illustration shows an example where a recess 103 is formed on the upper surface (wafer mounting surface) of the tray T, but this can be substituted or modified as follows: Figure 10 and Figure 11 As shown, a recess 108 is further formed on the lower surface side of the tray T. In this case, the recess 108 formed on the lower surface side of the tray T preferably has the following characteristics: Figure 11 The shape shown is fitted with the tray support surface of the electrostatic chuck 13.

[0113] First heat transfer material 104 Figure 4 The wafer W is positioned between the wafer mounting surface of the wafer W and the tray T. Therefore, a first heat transfer material 104 is disposed in the recess 103 of the tray T. The first heat transfer material 104 can be a liquid heat transfer material or a heat transfer sheet, as described later. The wafer W, mounted on the tray T, is in thermal contact with the tray T across its entire surface through this first heat transfer material 104, thereby improving the cooling efficiency of the wafer W by the heat transfer fluid flowing in the flow path 12a formed in the abutment 12.

[0114] More specifically, in conventional plasma processing apparatuses, to prevent the surface of the electrostatic chuck from being exposed to plasma and consumed, the wafer-carrying surface of the electrostatic chuck is typically smaller than the wafer being held (wafer diameter > electrostatic chuck outer diameter). However, in this case, the outer periphery of the wafer is not directly held by the electrostatic chuck, and as a result, the cooling of the outer periphery may be insufficient compared to the center of the wafer.

[0115] Furthermore, for example, when wafer W is deformed due to warping, it makes it difficult to make the electrostatic chuck make uniform solid contact with the wafer across the entire surface. As a result, the pressure of the electrostatic chuck on a portion of the wafer surface (the part that is warped upwards) is weakened, which may lead to insufficient cooling of that portion of the wafer surface.

[0116] In this respect, as the technology involved in this embodiment is described, by housing the wafer W inside the recess 103 of the tray T and further providing a first heat transfer material 104 between the wafer W and the circular plate portion 101 of the tray T, the wafer W and the tray T can easily achieve full surface contact through the first heat transfer material 104, thereby enabling uniform cooling of the entire surface of the wafer W.

[0117] As the first heat transfer material 104, a liquid heat transfer material or a sheet heat transfer material can be selected, but a gas can also be used as the first heat transfer material 104 as long as it enables the wafer W to make proper full-surface contact with the tray T and improves the heat transfer efficiency between the wafer W and the tray T.

[0118] Second heat transfer material 105 Figure 4 The arrangement shown is between the tray T and the tray mounting surface of the electrostatic chuck 13. The second heat transfer material 105 can be a liquid heat transfer material or a heat transfer sheet as described later. The second heat transfer material 105 can be the same material as the first heat transfer material 104, or a different material. The tray T, held by the electrostatic chuck 13, is in thermal contact with the electrostatic chuck 13 across its entire surface through the second heat transfer material 105. This improves the cooling efficiency of the heat transfer fluid flowing in the flow path 12a formed in the substrate 12 on the tray T, thereby improving the cooling efficiency of the wafer W mounted on the tray T.

[0119] More specifically, in conventional plasma processing devices, in order to adequately cool the wafer on the electrostatic chuck, it is necessary to increase the pressure of the wafer on the wafer mounting surface of the electrostatic chuck through electrostatic force, and to properly maintain solid contact between the electrostatic chuck and the wafer.

[0120] In this respect, as the technology involved in this embodiment is described, by providing a second heat transfer material 105 between the tray T and the tray support surface of the electrostatic chuck 13, the tray T and the electrostatic chuck 13 can easily achieve thermal contact through the second heat transfer material 105, without the need to apply stress such as electrostatic adsorption, and sufficient cooling effect of the wafer W can be expected solely by the weight of the tray Tw itself.

[0121] Furthermore, although the wafer W can be cooled by the weight of the tray Tw by introducing the second heat transfer material 105, it is also possible to hold the tray T on the electrostatic chuck 13 by electrostatic adsorption or the like. In this case, the pressing force of the tray T on the electrostatic chuck 13 is increased, which can further improve the cooling efficiency of the wafer W.

[0122] The tray T involved in this embodiment is configured as described above as an example. According to this embodiment, as described above, the annular portion 102, which functions as a conventional edge ring, is transported together with the wafer W. In other words, for each wafer processed in the wafer processing module 7, the edge ring (annular portion 102) and the wafer W are moved out of the wafer processing module 7 as a single unit. Therefore, even if the edge ring (annular portion 102) is consumed by plasma processing, it is not necessary to stop the operation of the wafer processing module 7 to replace the edge ring as in the past. Instead, the annular portion 102 moved out of the wafer processing module 7 can be directly replaced outside the wafer processing module 7 for each wafer processed. Therefore, the operating time of the wafer processing module 7 can be maximized.

[0123] Furthermore, since the edge ring (circular portion 102) is replaced in this manner for each wafer processed, edge ring consumption caused by continuous wafer processing in the wafer processing module 7 can be suppressed. As a result, the impact of edge ring consumption on the process results can be suppressed.

[0124] Furthermore, for the tray T consumed by plasma processing, only the consumed portion can be replenished and regenerated after it is removed from the wafer processing module 7, and then it can be reloaded onto the wafer W and transported back to the wafer processing module 7. For example, the consumed portion can be replenished and regenerated by thermal spraying, or by CVD, PVD, sol-gel method, or additive manufacturing technology (3D printing technology).

[0125] Alternatively, the tray T can be roughly sorted, surface-blasted, and then sorted according to its constituent materials, and reused as a new processed product different from the tray T. Furthermore, the Si powder obtained through sorting can be used to replenish and regenerate the portion of the tray T consumed after powdering.

[0126] <Protective unit for the bonding layer between the electrostatic chuck and the base>

[0127] For example, when the wafer processing in the wafer processing module 7 is an etching process performed as plasma processing, the bonding layer 16, which is formed as an adhesive between the electrostatic chuck 13 and the substrate 12, may be consumed by ions or free radicals if it is not properly protected from the plasma when the tray Tw holding the wafer W is placed on the support member 11. This can lead to insufficient temperature and electric field uniformity of the wafer W or the tray Tw placed on the support member 11, and may result in in-plane uniform processing results on the wafer W. Furthermore, variations in the gap between the electrostatic chuck 13 and the substrate 12 may cause abnormal discharges.

[0128] Therefore, the wafer processing module 7 according to this embodiment may have a protection unit for protecting the bonding layer 16. Hereinafter, an example of the configuration of the protection unit will be described.

[0129] In one implementation, such as Figure 12 As shown, a rib member 200 can be provided as a protective unit for protecting the bonding layer 16. The rib member 200 is configured to include a rib 202 extending downward from the annular portion 102, which is the peripheral portion. The height H of the rib 202 is sufficient to cover the side of the bonding layer 16, and the height H can be designed to be greater than the thickness of the electrostatic chuck 13.

[0130] As shown in the figure, the rib member 200 can be integrally formed with the tray T. That is, the diameter r5 of the tray T integrally formed with the rib member 200 is greater than the diameter r4 of the support member 11 (electrostatic chuck 13) (r5>r4).

[0131] With this configuration, the bonding layer 16 is covered by the rib 202 (rib member 200) which serves as a protective unit, thereby suppressing the phenomenon of its sides being consumed by ions or free radicals. This avoids the problem of increased temperature on the outer periphery of the support member 11 due to increased thermal resistance between the base and the electrostatic chuck (dielectric). Furthermore, it also avoids abnormal discharges that may be caused by changes in the gap between the electrostatic chuck 13 and the base 12. Moreover, even if the rib member 200 is consumed, it can be easily replaced, thus efficiently protecting the support member 11 and the like, achieving a long service life for the component.

[0132] Furthermore, when the rib member 200 is integrally formed with the tray T, such as Figure 13 As shown, for example, the second conveying mechanism 8 can be configured to have a protrusion 8a in the central part, and the pallet T containing the rib member 200 can be integrally conveyed by the second conveying mechanism 8 with the protrusion 8a. This prevents positional shift during conveying and achieves efficient process operation.

[0133] Furthermore, in one implementation, such as Figure 14As shown, a fluid supply unit 210 may be included as a protective unit for protecting the bonding layer 16. The fluid supply unit 210 includes a pump 212 for circulating the fluid and a flow path 215 for flowing the fluid. That is, through the operation of the pump 212, fluid is supplied to the flow path 215, and at the same time, the fluid circulated through the flow path 215 is also recovered. The flow path 215 includes a flow path 215a located at the interface between the back of the tray T and the tray support surface of the electrostatic chuck 13, and a flow path 215b located on the side (around) of the support member 11.

[0134] The configuration structure of flow path 215 is arbitrary, for example, as Figure 14 As shown, fluid is pumped from the pump 212 and supplied to the flow path 215a through the through hole 218 formed through the center of the support member 11. Through holes 12h and 13h for lifting pins can also be used instead of the through hole 218. An O-ring or similar sealing member 219 can be provided in the through hole 218 for sealing. Fluid flowing in the flow path 215a flows down the side (surroundings) of the support member 11 through the flow path 215b and is collected by the pump 212 (see the arrow in the figure). In one embodiment, the flow path 215 may include a return flow path 215c, and a flow path forming member 220 for forming the return flow path 215c can be provided.

[0135] Flow path 215b can be a flow path in which fluid flows along the side (surroundings) of the support member 11 by its own weight, or, in one embodiment, as... Figure 15 As shown, a wall component 222 for forming flow path 215b can be provided. The wall component 222 is configured as a cylinder surrounding the support component 11, and together with the flow path forming component 220, forms flow paths 215b and 215c, so that fluid flows around the support component 11.

[0136] Furthermore, as an example, such as Figure 16 As shown, a support structure 230 can be provided at the interface between the back of the tray T and the tray support surface of the electrostatic chuck 13 to form a flow path 215a. Additionally, in Figure 16 For simplicity, only the area near flow path 215a is shown in the diagram. The configuration of the support portion 231 that supports the support structure 230 in the top view is arbitrary. As an example, such as Figure 17 As shown, a structure in which support parts 231 are provided at four positions in the circumferential direction of the support structure 230 can be adopted.

[0137] Furthermore, the fluid flowing in flow path 215 is preferably a material that does not volatilize at least under vacuum (reduced pressure) and has high thermal conductivity. Examples include ionic liquids, silicone oils (silicone liquids), or fluorinated oils.

[0138] Ionic liquids are ionic compounds that are liquids at room temperature, also known as molten salts at room temperature. Ionic liquids are characterized by their near-zero vapor pressure and non-volatility (they do not volatilize even at high temperatures or in a vacuum). They are composed of cations and anions.

[0139] Examples of cations constituting ionic liquids include nitrogen-containing pyridinium, imidazolium, ammonium, pyrrolidineium, and piperidinium cations, as well as phosphorus-containing phosphonium cations. These cations contain alkyl groups [-(CH2)] as side chains. n [CH3] etc. In addition, other cations that constitute ionic liquids include, for example, morpholinium-type and sulfonium-type.

[0140] As an anion constituting ionic liquids, TfO can be cited as an example. - ,Tf2N - (TFSA - ), Tf3C - FSA - CH3COO - CF3COO - BF4 - PF6 - (CN)2N - AlCl4 - Al2Cl7 - And so on, but not limited to these. In addition, PF6 can be cited as another anion constituting ionic liquids. - Cl - .

[0141] Furthermore, specific examples of ionic liquids include potassium bis(trifluoromethanesulfonyl)imide, potassium bis(nonafluorobutyryl)imide, 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide, 1-methyl-1-propylpyrrolidine bis(trifluoromethanesulfonyl)imide, and 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide.

[0142] With this configuration, since the bonding layer 16 has a fluid supply section 210 as a protective unit, the fluid flowing in the flow path 215 covers the sides of the support member 11, including the bonding layer 16, thereby suppressing its consumption by ions or free radicals. This avoids the problem of increased temperature on the outer periphery of the support member 11 due to increased thermal resistance between the base and the electrostatic chuck (dielectric). Furthermore, it also avoids abnormal discharges that may be caused by changes in the gap between the electrostatic chuck 13 and the base 12. In other words, the support member 11 and the like can be effectively protected, achieving a long service life for the components.

[0143] Furthermore, when the fluid is conductive, by flowing the fluid in the flow path 215a at the interface between the back of the tray T and the tray support surface of the electrostatic chuck 13, the thermal resistance between the support member 11 (electrostatic chuck 13) and the tray Tw can be reduced, the heat transfer efficiency can be improved, and thus the heat transfer efficiency between the wafer W and the electrostatic chuck 13 can be improved.

[0144] <Wafer mounting / detachment method relative to tray>

[0145] Next, an example of a method for mounting wafer W relative to tray T in the aforementioned mounting apparatus (not shown) and a method for separating wafer W from tray T in the separation apparatus (not shown) will be described.

[0146] (1) Using lifting pins

[0147] When mounting / separating the wafer W relative to the tray T, the through hole 101h formed on the circular plate portion 101 can be used.

[0148] That is, such as Figure 18 As shown, in the mounting / separating device, with the tray T placed on the stage, a lifting pin extends freely from and retracts from the upper surface of the circular plate portion 101 through a through hole 101h formed on the circular plate portion 101 of the tray T. Thus, the lower surface of the wafer W mounted on the tray T can be supported by the lifting pin and moved (lifted) longitudinally, thereby achieving the mounting / separation of the wafer W relative to the tray T.

[0149] Furthermore, for transporting the wafer W to the outside of the mounting / separating device, for example, it is performed by holding the wafer W by a transport mechanism disposed outside the mounting / separating device. At this time, in order to suppress damage to the device layer formed on the surface side of the wafer W, the transport mechanism holds the back side or the outer end of the wafer W opposite to the surface on which the device layer is formed. For example, when the transport mechanism holds the back side of the wafer W, as... Figure 18 As shown, the device is configured such that when the wafer W is lifted by the lifting pin, it can be inserted between the wafer W and the stage.

[0150] (2) Using the insertion component

[0151] When separating the wafer W from the tray T, the gap G between the annular portion 102 formed on the tray T and the wafer W can also be utilized (see reference). Figure 4 Insertion component.

[0152] Specifically, when separating the wafer W from the tray T, such as Figure 19As shown, an insertion member In for separating the wafer W from the tray T is inserted into the gap G. The wafer W is pushed upward by the insertion member In, thereby peeling the wafer W from the tray T. The wafer W, peeled from the tray T by the insertion member In, is held by its back side or outer end by a transport mechanism and removed from the separation device.

[0153] Alternatively, the insertion member In can be inserted at only one position in the gap G, or it can be inserted at multiple positions in the gap G along the circumferential direction. In this case, the insertion member In can have one insertion portion and continuously insert that insertion portion into multiple positions in the gap G, or it can have multiple insertion portions and simultaneously insert the multiple insertion portions into multiple positions in the gap G.

[0154] (3) Utilizing fluids

[0155] When separating the wafer W from the tray T, it can be configured to introduce fluid into the recess 103 between the wafer W and the tray T, instead of or in addition to the aforementioned lifting pin or insertion component In.

[0156] Specifically, such as Figure 20 As shown, in the separation apparatus, fluid is supplied between the wafer W and the tray T through through holes formed in the stage and through holes 101h formed in the circular plate portion 101 of the tray T, thereby causing the wafer W to float above the tray T. In this state, by utilizing... Figure 18 , Figure 19 The lifting pin or insertion component In shown allows for easy separation of the tray T from the wafer W. Alternatively, in this state, the wafer W can be removed from the separation device by holding its outer end by a conveying mechanism.

[0157] Furthermore, an inert gas (e.g., N2 gas) or an ionic liquid can be used as the fluid supplied to the recess 103.

[0158] (4) Dividing the tray

[0159] When loading / unloading the wafer W relative to the tray, it can also be configured to divide at least a portion of the tray T, from which the wafer W is moved into / out of the recess 103 of the tray T.

[0160] Specifically, for example Figure 21 As shown in (a), the pallet T can be configured to divide part or all of the annular portion 102 into a structure that can move (lift) longitudinally relative to the circular plate portion 101. In other words, it can also be configured to divide a part of the pallet T (especially the annular portion 102).

[0161] Then, by raising the segment 102p, and in that state, as Figure 21(b) shows that the wafer W slides relative to the recess 103, thereby allowing the wafer W to be mounted / separated relative to the tray T.

[0162] (5) Other methods of dividing pallets

[0163] In the example above (4), a portion of the annular portion 102 of the tray T is divided, but the annular portion 102 can be replaced by at least a portion of the divided circular plate portion 101.

[0164] Specifically, for example Figure 22 As shown, the pallet T can be configured to divide part or all of the circular plate portion 101 into a structure that can be buffered and driven (lifted) in the longitudinal direction. In other words, it can also be configured to divide a part of the pallet T (especially the circular plate portion 101).

[0165] Then, the segmented portion 101p is raised by the lifting pin, and in this state, the conveying arm of the conveying mechanism located outside the mounting / separating device is inserted into the back side of the wafer W, so that the wafer W can be mounted / separated relative to the tray T.

[0166] Furthermore, when a portion of the circular plate portion 101 of the tray T is divided in this way, to prevent leakage when the divided portion 101p is lifted, it is preferable to choose a sheet-like heat transfer material rather than a liquid heat transfer material as the first heat transfer material 104 and the second heat transfer material 105. When a sheet-like heat transfer material is selected as the first heat transfer material 104 and the second heat transfer material 105, the first heat transfer material 104 and the second heat transfer material 105 can be used as follows: Figure 22 As shown, the material is divided to match the shape of the segmented portion 101p of the circular plate portion 101. Alternatively, the first heat transfer material 104 and the second heat transfer material 105 may not be divided, and a sheet-like heat transfer material with elasticity may be selected, such as... Figure 23 As shown, it extends and retracts longitudinally in accordance with the lifting of the segment 101p. Furthermore, for example, as... Figure 24 As shown, it is also possible to divide the material into sections by using only one of the first heat transfer material 104 or the second heat transfer material 105 (the second heat transfer material 105 in the illustrated example) in accordance with the shape of the dividing section 101p.

[0167] In addition, for example in Figures 22-24 In the example shown, a portion of the circular plate portion 101 is divided, and the divided portion 101p is configured to be liftable, but it can also be as follows: Figure 25As shown, a through hole 101h for inserting a lifting pin is formed in part or all of the circular plate portion 101, and the wafer W is lifted by the lifting pin through a first heat transfer material 104 or a second heat transfer material 105 (the second heat transfer material 105 in the illustrated example). Therefore, a buffer-driven segment 101p can be provided in the through hole 101h formed on the circular plate portion 101 of the tray T, or the segment 101p can be omitted.

[0168] In addition, Figures 22-25 In the example shown, the through hole 101h (segmentation portion 101p) for mounting / separating the wafer W relative to the tray T is only disposed at the center of the circular plate portion 101, but the number of through holes 101h (segmentation portion 101p) is not limited to this, and can be disposed at multiple locations in the plane of the circular plate portion 101 (preferably three or more).

[0169] Furthermore, the shape of the through hole 101h (segment 101p) is not particularly limited, and it can be any shape, such as circular or rectangular, when viewed from above.

[0170] <Tray conveying / positioning method relative to electrostatic chucks>

[0171] Next, the method for conveying / placing the tray Tw configured as described above to the electrostatic chuck 13 in the wafer processing module 7 will be explained.

[0172] (1) Using lifting pins

[0173] When placing the tray Tw on the tray support surface of the electrostatic chuck 13, the lifting pin 14a inserted into the through holes 12h and 13h can be used.

[0174] That is, for example, when the tray Tw is positioned above the electrostatic chuck 13 by the second conveying mechanism 8 (see also...) Figure 3 By extending the lifting pin 14a through the through holes 12h and 13h from the upper surface of the electrostatic chuck 13, the tray Tw is transferred from the second conveying mechanism 8 to the upper end of the lifting pin 14a. Afterwards, by lowering the lifting pin 14a after the second conveying mechanism 8 has retracted, the tray Tw can be transferred from the lifting pin 14a to the tray support surface of the electrostatic chuck 13.

[0175] In this way, by supporting the lower surface of the tray Tw with the second conveying mechanism 8 and the lifting pin 14a and conveying / handling it, the tray Tw can be handed over to the electrostatic chuck 13 without damaging the device layer formed on the surface of the wafer W mounted on the tray T.

[0176] (2) Hold the tray from above / side

[0177] In addition, when transporting wafer W to electrostatic chuck 13, it is necessary to prevent damage to the device layer formed on the surface of wafer W. In conventional wafer processing without using tray T, it is generally necessary to keep the back side of wafer W during transport / handover.

[0178] Therefore, in the wafer processing according to this embodiment, as described above, the wafer W is transported / transferred while mounted on the tray T. Furthermore, in this embodiment, the tray T has an annular portion 102 disposed radially outside the wafer W.

[0179] Therefore, in the wafer processing involved in this embodiment, instead of supporting the back side of the tray Tw by the second conveying mechanism 8 and the lifting pin 14a as described above, the tray T can be held from the top side or the side side to carry out the conveying / transfer with the electrostatic chuck 13.

[0180] Specifically, as an example, such as Figure 26 As shown, for example, the annular portion 102 of the tray T carrying the wafer W can be held and transported from above by the second transport mechanism 8. In this case, by holding the annular portion 102 of the tray T, damage to the device layer formed on the surface of the wafer W can be suppressed; therefore, the second transport mechanism 8 can physically hold and transport the annular portion 102 of the tray T. The second transport mechanism 8 is not particularly limited in its method of holding the tray T; any method such as magnet, vacuum adsorption, or electrostatic adsorption can be selected.

[0181] Thus, in the wafer processing involved in this embodiment, where the wafer W to be processed is mounted on the tray T and transported / transferred, since the tray Tw on which the wafer W is mounted can be accessed, held / transported from above without the wafer W being in direct contact with the second transport mechanism 8 by holding the tray T, the wafer W can be accessed, held / transported from above.

[0182] Furthermore, since the tray Tw can be held from above in this manner, when transferring the tray Tw to the electrostatic chuck 13, it is not necessary to use the lifting pin 14a as in the past; the tray Tw can be directly transferred from the second transport mechanism 8 to the electrostatic chuck 13. Therefore, when the tray Tw is held from above or to the side in this way, the lifting device 14 for transferring the tray Tw to the electrostatic chuck 13 can be omitted, thereby simplifying the configuration of the wafer processing module 7.

[0183] <Methods for fixing the tray relative to the supporting components>

[0184] Next, an example of the method for fixing the tray Tw transported as described above to the support member 11 (electrostatic chuck 13) in the wafer processing module 7 will be described.

[0185] As described above, the tray Tw is held on the tray support surface of the support member 11. However, in order to efficiently utilize the heat transfer fluid flowing in the flow path 12a formed in the base 12 to cool the wafer W, it is necessary to increase the pressing force (surface pressure) of the tray Tw on the electrostatic chuck 13. Therefore, in the following description, a method of holding the tray Tw on the electrostatic chuck 13 with a pressing force exceeding the weight of the tray Tw itself will be described to improve the cooling efficiency of the wafer W.

[0186] (1) Electrostatic adsorption

[0187] like Figure 2 As shown, the electrostatic chuck 13 of the support member 11 is provided with an electrostatic electrode 13b for supporting the tray Tw on the tray support surface. The support member 11 can use this electrostatic electrode 13b to attract and hold the tray Tw.

[0188] First, the case where the circular plate portion 101 of the tray T is made of a conductive material will be explained.

[0189] When performing adsorption and retention of the tray Tw, firstly as follows: Figure 27 As shown in (a), a voltage (positive (+) charge in the illustrated example) is applied to the electrostatic electrode 13b. Thus, the electrostatic electrode 13b becomes positively (+) charged.

[0190] When electrostatic electrode 13b is positively (+) charged, as Figure 27 As shown in (b), a charge of opposite polarity (i.e., negative (-)) to the charge accumulated on the circular plate portion 101 of the tray T or the wafer W, separated by the ceramic component 13a which serves as a dielectric, is generated. This creates a Coulomb force with the tray T (wafer W) and the electrostatic electrode 13b as the two poles, thereby attracting and holding the tray Tw on the tray support surface of the electrostatic chuck 13.

[0191] Furthermore, when the tray Tw is held adsorbed and held on the electrostatic chuck 13 by Coulomb force in this manner, the Coulomb force can be increased by generating plasma in the wafer processing module 7, thereby enhancing the adsorption and holding force of the electrostatic chuck 13. Specifically, as Figure 27 As shown in (c), by generating plasma in the plasma processing space 10s, a charge of opposite polarity (i.e., negative (-)) to the charge accumulated on the electrostatic electrode 13b is moved from the plasma to the circular plate portion 101 of the tray T or the wafer W. In other words, the charge can be replenished from the plasma to enhance the Coulomb force, thereby allowing the tray Tw to be more firmly adsorbed and held.

[0192] Next, the case where the circular plate portion 101 of the tray T is made of an insulating material will be described. When the circular plate portion 101 of the tray T is made of an insulating material, a charged electrode 101b is disposed inside the circular plate portion 101.

[0193] When performing adsorption and retention of the tray Tw, firstly as follows: Figure 28 As shown in (a), a voltage (positive (+) charge in the illustrated example) is applied to the electrostatic electrode 13b. Thus, the electrostatic electrode 13b becomes positively (+) charged.

[0194] When electrostatic electrode 13b is positively (+) charged, as Figure 28 As shown in (b), a charge of opposite polarity (i.e., negative (-)) to the charge accumulated on the charged electrode 101b or wafer W disposed on the circular plate portion 101, which is separated by the ceramic component 13a as a dielectric and the circular plate portion 101 as an insulating component, is generated. In this way, a Coulomb force is generated with the charged electrode 101b (wafer W) and the static electrode 13b as the two poles, thereby attracting and holding the tray Tw on the tray support surface of the electrostatic chuck 13.

[0195] Furthermore, when the circular plate portion 101 of the tray T is made of an insulating material, the Coulomb force can be increased by generating plasma in the wafer processing module 7, thereby enhancing the adsorption and holding force of the electrostatic chuck 13. Specifically, as Figure 28 As shown in (c), by generating plasma in the plasma processing space for 10 seconds, a charge of opposite polarity (i.e., negative (-)) to the charge accumulated on the electrostatic electrode 13b is transferred from the plasma to the charged electrode 101b or the wafer W. In other words, the charge can be replenished from the plasma to enhance the Coulomb force, thereby allowing for a more secure adsorption and holding tray Tw.

[0196] Thus, regardless of whether the circular plate portion of the tray T is composed of conductive or insulating components, by applying a voltage to the electrostatic electrode 13b of the electrostatic chuck 13, the tray Tw can be properly adsorbed and held on the tray support surface. Furthermore, by generating plasma in the plasma processing space for 10 seconds, the Coulomb force between the tray Tw and the electrostatic chuck 13 can be increased, thereby more firmly adsorbing and holding the tray Tw.

[0197] Furthermore, by utilizing Coulomb force in this way, the adsorption and retention of the tray Tw can be controlled solely by adjusting the voltage applied to the electrostatic electrode 13b. Therefore, the tray Tw can be adsorbed and retained without complicating the structure of the support member 11. Moreover, since adsorption and retention can be achieved solely through voltage control, the controllability is excellent, and the adsorption force within the surface of the tray Tw can be uniformly controlled, i.e., the surface pressure of the tray Tw on the electrostatic chuck 13 can be uniformly controlled, thereby improving the cooling efficiency of the wafer W and enhancing the reproducibility of the adsorption force.

[0198] Furthermore, when the tray Tw is held in place by Coulomb force in this manner, the tilt of the outermost periphery of the wafer W can be controlled by controlling the adsorption force within the surface of the tray Tw when the wafer processing in the wafer processing module 7 is an etching process performed as plasma processing.

[0199] When the annular portion 102 of the tray T is consumed due to plasma processing, and the height of the upper surface of the annular portion 102 changes, the position of the plasma sheath layer formed above the outer periphery of the wafer W is lower than the position of the plasma sheath layer formed above the center of the wafer W. This causes the incident angle of the ions relative to the wafer W to tilt, thereby causing the etch trenches formed at the outermost periphery of the wafer W to tilt.

[0200] Therefore, in the wafer processing module 7 of this embodiment, the adsorption force in the tray Tw surface (more specifically, the two regions, the radially inner circular region and the radially outer annular region, is controlled by the electrostatic chuck 13 according to the degree of consumption (consumption amount) of the annular portion 102 of the tray T.

[0201] Specifically, for example, by making the adsorption force on the outer periphery of the tray Tw stronger than the adsorption force on the center of the tray Tw, such as... Figure 29 As shown, in the cross-sectional view, the adsorption shape of the tray Tw is deformed into an upwardly convex shape. Thus, the height of the upper surface of the outer periphery or annular portion 102 of wafer W is lower than the height of the upper surface of the center portion of wafer W, thereby lowering the position of the plasma sheath layer formed above the outer periphery of wafer W, such as... Figure 29 As shown, the ion incident angle can be tilted radially inward towards the wafer W.

[0202] On the other hand, for example, by making the adsorption force on the outer periphery of the tray Tw weaker than the adsorption force on the center of the tray Tw, such as... Figure 30 As shown, in the cross-sectional view, the adsorption shape of the tray Tw is deformed into an upwardly concave shape. Thus, the height of the upper surface of the outer periphery or annular portion 102 of wafer W is higher than the height of the upper surface of the center portion of wafer W, thereby increasing the position of the plasma sheath layer formed above the outer periphery of wafer W. Figure 30 As shown, the ion incident angle can be tilted radially outward towards the wafer W.

[0203] According to this embodiment, by controlling the adsorption force within the surface of the tray Tw according to the degree of consumption (consumption amount) of the annular portion 102 of the tray T or the purpose of the etching process, the incident angle of ions relative to the wafer W can be controlled, thereby controlling the tilt of the etching trench formed at the outermost periphery of the wafer W.

[0204] (2) Clamping and holding

[0205] In addition, Figures 27-30 The example shown illustrates the case where the tray Tw is electrostatically attracted by the electrostatic chuck 13 of the support member 11, but the method of fixing the tray Tw to the support member 11 is not limited to this. Therefore, in the wafer processing module 7, the support member 11 does not necessarily need to have the electrostatic chuck 13.

[0206] Specifically, for example Figure 31 As shown, multiple (e.g., two or more) pin components 130 are provided on the lower surface of the tray T. After the pin components 130 are inserted into the fixing holes formed in the support component 11, the tray T and the support component 11 are mechanically held / fixed by the locking mechanism 131. The pin components 130 and the locking mechanism 131 preferably have the following structure: when the tray T is fixed (locked) to the support component 11, the pin components 130 are pulled into the fixing holes (support component 11); when disengaging (unlocking), the pin components 130 are pushed upward relative to the fixing holes (support component 11). By locking the pin components 130 provided on the tray T to the support component 11 in this way, the tightness (surface pressure) between the tray T and the support component 11 (electrostatic chuck 13) can be improved, the heat transfer can be improved, and thus the cooling efficiency of the wafer W can be improved.

[0207] In addition, the structure of the locking mechanism 131 is not particularly limited, as long as it can improve the tightness between the support member 11 (electrostatic chuck 13) and the tray T when fixing (locking) the tray T.

[0208] An example of the locking mechanism 131 is a clamping suction cup mechanism, such as... Figure 31 As shown, the pull-in member 131a, which has a tapered shape for the pull-in pin member 130, and the push-out member 131b, which has a tapered shape for the push-out pin member 130, can be moved in the horizontal direction by the sliding mechanism 131c.

[0209] Alternatively, for example, the locking mechanism 131 could also be a ring rotation mechanism, such as... Figure 32 As shown, after the pin component 130 is inserted into the fixing hole, the locking mechanism 131 can be configured to rotate relative to the pin component 130 in the circumferential direction. In this case, the rotating mechanism for rotating the tray T relative to the support component 11 can be a motor. Furthermore, the ring rotation mechanism can either rotate only the locking mechanism 131 relative to the pin component 130, or rotate the entire support component 11 relative to the pin component 130.

[0210] When the locking mechanism 131 is configured to be rotatable only, its structure can be miniaturized. When the entire support member 11 is configured to be rotatable, although the structure of the locking mechanism 131 becomes larger, the liquid heat transfer material is supplied through the aforementioned through holes 12h and 13h (see...). Figure 12The through holes 12h and 13h can be moved circumferentially by rotation during the handover of the tray T and the supply of liquid heat transfer material. In other words, the handover of the tray T and the supply of liquid heat transfer material can be achieved simultaneously without causing the position of the through hole 101h formed on the tray T to shift circumferentially and / or radially from the position of the through holes 12h and 13h.

[0211] (3) Magnetic retention

[0212] In addition, for example, the tray Tw can also be held in place by magnetic attraction on the support component 11.

[0213] Specifically, such as Figure 33 As shown, magnets 102m and 11m are disposed inside the annular portion 102 of the tray T and on the outer periphery (facing the annular portion 102) inside the support member 11 corresponding to the annular portion 102. Electromagnets or permanent magnets can be selected as the magnets 102m and 11m disposed inside these annular portions 102 and the support member 11.

[0214] Then, by arranging the tray Tw above the support member 11 on which the magnet 11m is provided, with the magnet 11m facing the magnet 102m, a magnetic force is generated with the magnet 11m and the magnet 102m as the two poles, thereby attracting and holding the tray Tw on the support member 11.

[0215] Furthermore, at this time, for example, Figure 33 As shown, the demagnetizing body 140 is configured to be freely inserted and removed between the annular portion 102 of the tray Tw and the outer periphery of the support member 11. Therefore, by distributing the demagnetizing body 140 between the annular portion 102 and the support member 11, the magnetic force generated between the magnets 11m and 102m can be neutralized, enabling the tray Tw to be transported from the tray support surface of the support member 11.

[0216] Thus, in the wafer processing module 7 of this embodiment, it can be configured such that by arranging magnets inside the tray T and the support member 11 respectively, the tray T can be attracted and held in the support member 11.

[0217] (4) Vacuum adsorption

[0218] Furthermore, the support component 11 of the wafer processing module 7 can replace the electrostatic chuck 13 and have a vacuum chuck. In this case, as the second heat transfer material 105 disposed at least on the lower surface side of the tray T, a sheet-like heat transfer material with elasticity is preferably selected.

[0219] Specifically, for example Figure 34As shown in (a), a through hole 105h is formed in the second heat transfer material 105 (sheet-shaped heat transfer material) disposed on the lower surface side of the tray T at a position corresponding to the vacuum line 11v formed on the support member 11 in the top view. Thus, as... Figure 34 As shown in (b), by starting the vacuum pump connected to the vacuum line 11v, the tray Tw is held in place on the tray support surface of the support member 11 by vacuum force.

[0220] Furthermore, at this time, by selecting a sheet-like heat transfer material with elasticity as the second heat transfer material 105, the second heat transfer material 105 is compressed in the thickness direction as the tray T is pressed against the tray support surface by vacuum force. Thus, due to the plastic deformation of the second heat transfer material 105, the through holes 105h are blocked, and the tray T contacts the entire surface of the support member 11 through the second heat transfer material 105. This allows for proper vacuum adsorption of the tray T and improves the cooling efficiency of the wafer W mounted on the tray T.

[0221] Methods for detaching a tray from an electrostatic chuck.

[0222] Next, an example of a method for detaching the tray Tw, which is fixed to the support member 11 (electrostatic chuck 13) as described above, from the support member 11 will be described.

[0223] As described above, the support member 11 in this embodiment is equipped with a lifter 14, which supports the tray Tw from below via a lifting pin 14a, allowing it to detach from the tray support surface of the support member 11 (electrostatic chuck 13).

[0224] However, when using the lifting pin 14a to detach the tray Tw from the support member 11, there is a concern that, for example, due to residual adsorption or vacuum adsorption, it may be difficult to easily peel the tray Tw off the tray support surface. Furthermore, if the lifting pin 14a is used to lift the tray Tw in the presence of such residual adsorption, there is a concern that the tray T or wafer W may be damaged due to overload.

[0225] Therefore, in the wafer processing module 7 of this embodiment, in order to suppress the damage caused by the overload due to the lifting, an inert gas (e.g., N2 gas) is supplied to the interface between the tray Tw and the support member 11.

[0226] More specifically, such as Figure 35As shown, an inert gas supply path 151, connected to a gas supply unit 150 equipped with a gas supply source, is added to the through holes 12h and 13h through which the lifting pin 14a for raising and lowering the tray Tw is inserted. Furthermore, when detaching the tray Tw, inert gas is supplied before the tray Tw is lifted by the lifting pin 14a, thereby pressurizing the interface between the tray Tw and the support member 11 to assist the tray Tw in detaching from the support member 11. Additionally, the gas supply unit 150 can be connected to... Figure 2 The gas supply unit 20 shown is shared.

[0227] According to this embodiment, the tray Tw can be easily disassembled by supplying inert gas when the tray Tw is detached from the support member 11.

[0228] In addition, as described above, the support member 11 has a plurality of (three in this embodiment) through holes 12h and 13h for inserting the lifting pin 14a, but the inert gas used to disengage the tray Tw only needs to be supplied to at least one of them.

[0229] Furthermore, in the above embodiment, an inert gas (N2 gas) is supplied to the interface between the tray Tw and the support member 11. However, the supplied gas is not limited to an inert gas, as long as the interface between the tray Tw and the support member 11 can be appropriately pressurized under vacuum. Specifically, for example, an ionic liquid may be supplied to the interface between the tray Tw and the support member 11 when the tray Tw is detached.

[0230] <Effects and Effects of the Technology Disclosed>

[0231] In the wafer processing system 1 disclosed herein, the wafer W to be processed is mounted on a tray T, and these trays T and the wafer W are transported / processed integrally. Furthermore, when the wafer processing in the wafer processing module 7 is an etching process performed as plasma processing, a protective unit is provided to protect the bonding layer 16 formed as an adhesive between the electrostatic chuck 13 and the base 12. This suppresses the phenomenon of the bonding layer 16 being consumed by ions or free radicals.

[0232] For example, according to Figure 12 , Figure 13 The configuration in question includes a rib member 200 comprising a rib 202 as a protective unit. By setting the height H of the rib 202 to cover the side surface of the bonding layer 16, side wear of the bonding layer 16 can be effectively suppressed.

[0233] In addition, for example, according to Figures 14-17The configuration includes a fluid supply unit 210 as a protective unit. The fluid supply unit 210 includes a flow path 215, which is located on the side (around) of the support member 11. As a result, by the fluid flowing in the flow path 215 covering the side of the support member 11 containing the bonding layer 16, the phenomenon of it being consumed by ions or free radicals is suppressed.

[0234] By suppressing the consumption of the support member 11 containing the bonding layer 16, the problem of increased peripheral temperature of the support member 11 due to increased thermal resistance between the substrate and the electrostatic chuck (dielectric) can be avoided. Therefore, temperature uniformity and electric field uniformity, including the peripheral portion of the wafer W, can be ensured, resulting in in-plane uniform processing results. At the same time, the support member 11 and the like can be effectively protected, thus extending the lifespan of the components.

[0235] Furthermore, in the wafer processing module 7 disclosed herein, as described above, the pressing force (surface pressure) of the tray T relative to the tray support surface of the support member 11 is increased by electrostatic adsorption or clamping. This further improves the heat transfer performance from the wafer W to the support member 11, and allows for a more appropriate increase in the cooling efficiency of the wafer W.

[0236] Furthermore, in the above description, the example given is that wafer processing module 7 is a plasma processing module that performs plasma processing such as etching on wafer W. However, the wafer processing performed in wafer processing module 7 is not limited to plasma processing. For example, the techniques disclosed herein can be applied to any processing that requires ensuring temperature uniformity or electric field uniformity, including the outer periphery of the wafer W to be processed.

[0237] It should be considered that the embodiments disclosed herein are exemplary in all respects and not restrictive. The above embodiments may be omitted, substituted, or modified in various forms without departing from the appended claims and their spirit. For example, the constituent elements of the above embodiments can be arbitrarily combined. From these arbitrary combinations, the functions and effects of each constituent element involved in the combination can of course be obtained, and other functions and effects that are obvious to those skilled in the art can be obtained from the description herein.

[0238] Furthermore, the effects described in this specification are illustrative or exemplary only, and not restrictive. That is, the technology involved in this disclosure can produce other effects, in addition to those described above, or in place of those described above, that are obvious to those skilled in the art from the description in this specification.

Claims

1. A substrate processing apparatus, comprising: Processing chamber; and A support component, disposed within the processing chamber, has a tray support surface on its upper surface that supports the tray. The supporting component includes: An electrostatic chuck includes internal electrostatic electrodes for adsorbing and supporting the tray; A base supporting the electrostatic chuck; and A bonding layer is used to bond the electrostatic chuck to the base. The substrate processing apparatus includes a protection unit for protecting the bonding layer.

2. The substrate processing apparatus according to claim 1, wherein, The tray includes a base and a peripheral portion on the upper surface of the base forming a recess for receiving the substrate. The protective unit is a rib member, which includes ribs extending downward from the periphery to cover the periphery of the bonding layer.

3. The substrate processing apparatus according to claim 1, wherein, The protection unit is a fluid supply section that supplies fluid to the interface between the tray support surface and the tray and around the joint layer.

4. The substrate processing apparatus according to claim 3, wherein, The fluid is selected from at least one of ionic liquids, silicone liquids, or fluorinated oils.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein, The tray is made of at least one material selected from Si, SiC, Al2O3 or Y2O3.

6. A tray supported by a support member disposed within a processing chamber of a processing substrate, comprising: Base; and The peripheral portion has a recess formed on the upper surface of the base to receive the substrate. The supporting component includes: An electrostatic chuck includes internal electrostatic electrodes for adsorbing and supporting the tray; A base supporting the electrostatic chuck; and A bonding layer is used to bond the electrostatic chuck to the base. The tray has ribs, which include ribs extending downward from the periphery to cover the periphery of the bonding layer.

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