Power module and semiconductor device

Abstract

The first wiring component (11) has a mounting surface (15) and an exposed surface (16), on which a semiconductor element (2) is mounted, and the exposed surface (16) is exposed on the side opposite to the mounting surface (15). The second wiring component (12) is arranged with a gap relative to the first wiring component (11) in a direction orthogonal to the thickness direction of the first wiring component (11). A retaining component (20) is arranged between the first wiring component (11) and the second wiring component (12) and retains both the first wiring component (11) and the second wiring component (12). The retaining component (20) has a protrusion (22). The protrusion (22) protrudes from the exposed surface (16) toward the exposed surface (16) in the thickness direction.

Description

Technical Field

[0001] This disclosure relates to a power module and a semiconductor device. Background Technology

[0002] Patent document 1 discloses a power module, which includes a power semiconductor element, a ceramic substrate and a heat sink. The ceramic substrate is a circuit board on which the power semiconductor element is mounted, and the ceramic substrate is mounted on the heat sink using thermal paste.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent No. 6234630 Summary of the Invention

[0006] -The technical problem the invention aims to solve-

[0007] In the invention of Patent Document 1, a ceramic substrate serving as an insulating heat dissipation component is arranged between the power semiconductor element and the heat sink. Therefore, when the heat generated by the power semiconductor element is dissipated, the insulating heat dissipation component generates thermal resistance, resulting in a decrease in heat dissipation performance.

[0008] The purpose of this disclosure is to facilitate the dissipation of heat generated by semiconductor devices.

[0009] - Technical solutions used to solve technical problems -

[0010] A first aspect of this disclosure relates to a power module comprising a semiconductor element 2, a first wiring component 11, a second wiring component 12, an insulating retaining component 20, and an insulating package 36. The first wiring component 11 is composed of a conductive plate-like component and has a mounting surface 15 on which the semiconductor element 2 is mounted, and an exposed surface 16 exposed on the side opposite to the mounting surface 15. The second wiring component 12 is composed of a conductive plate-like component and is arranged with a gap relative to the first wiring component 11 in a direction orthogonal to the thickness direction of the first wiring component 11, and has an exposed surface 16 exposed on the same side as the exposed surface 16 of the first wiring component 11. The retaining component 20 is arranged between the first wiring component 11 and the second wiring component 12 to retain the first wiring component 11 and the second wiring component 12, and has a protrusion 22 protruding from the exposed surface 16 toward the exposed surface 16 in the thickness direction. The package 36 at least covers the semiconductor element 2 and the mounting surface 15 of the first wiring component 11 and the second wiring component 12.

[0011] In the first aspect, the heat generated in the semiconductor element 2 is directly dissipated from the exposed surface 16 of the first wiring member 11, thereby reducing thermal resistance. Furthermore, by providing the protrusion 22, the creepage distance between the first wiring member 11 and the second wiring member 12 can be ensured.

[0012] The second aspect of this disclosure, based on the power module of the first aspect, is that the end of the retaining member 20 on the side of the mounting surface 15 of the first wiring member 11 is coplanar with the mounting surface 15, or is arranged at a position closer to the exposed surface 16 than the mounting surface 15.

[0013] In the second aspect, when wire bonding is performed on the first wiring component 11 and the second wiring component 12, it is possible to suppress the retention component 20 from causing obstruction. In addition, it is possible to reduce the amount of retention component 20 used.

[0014] The third aspect of this disclosure is based on the power module of the first or second aspect, wherein the protrusion 22 has a shape that gradually tapers toward the tip of the protrusion 22.

[0015] In the third aspect, the heat generated in the semiconductor element 2 is dissipated outward in a manner that diffuses along the gradually tapering shape of the protrusion 22, thereby reducing thermal resistance.

[0016] The fourth aspect of this disclosure is based on the power module of any one of the first to third aspects, wherein the power module includes a connection terminal 13 integrally formed with the first wiring component 11.

[0017] In the fourth aspect, there is no need to perform an additional process of connecting the first wiring component 11 and the connection terminal 13, which can reduce the operation time.

[0018] The fifth aspect of this disclosure, based on the power module of the fourth aspect, wherein the connection terminal 13 extends in a direction orthogonal to the thickness direction of the first wiring component 11, and the power module includes an insulating component 25 disposed at a position of the connection terminal 13 on the side of the exposed surface 16 of the first wiring component 11.

[0019] In the fifth aspect, even if the connecting terminal 13 is extended in a direction orthogonal to the thickness direction of the first wiring member 11, the insulation distance can be ensured because of the insulating member 25 provided on the side of the connecting terminal 13 near the exposed surface 16 of the first wiring member 11.

[0020] The sixth aspect of this disclosure, based on the power module of the fourth aspect, wherein the connection terminal 13 extends from the mounting surface 15 of the first wiring component 11 toward the mounting surface 15 in the thickness direction, and then extends in a direction orthogonal to the thickness direction of the first wiring component 11.

[0021] In the sixth aspect, the insulation distance can be further extended by bending the connecting terminal 13 multiple times from the first wiring component 11.

[0022] The seventh aspect of this disclosure, based on the power module of any of the fourth to sixth aspects, includes a plurality of wiring layers 50 comprising the first wiring component 11 and the second wiring component 12, provided with spacing in the board thickness direction.

[0023] In the seventh aspect, by setting multiple wiring layers 50 with intervals in the thickness direction, the space in the thickness direction can be effectively utilized to achieve miniaturization of the module.

[0024] The eighth aspect of this disclosure is based on the power module of any of the first to seventh aspects, wherein the power module includes a housing 30 covering the package 36.

[0025] In the eighth aspect, the semiconductor element 2 can be protected by covering the package 36 with the housing 30.

[0026] Based on the power module of any one of the first to seventh aspects of this disclosure, the ninth aspect of this disclosure includes a package 36 formed of molding resin, wherein the retaining member 20 is integrally formed with the package 36.

[0027] In the ninth aspect, by integrally molding the retaining member 20 with the package 36, the retaining member 20, which is a separate component, is not required, thereby reducing costs.

[0028] The tenth aspect of this disclosure relates to a semiconductor device comprising a power module 10 of any one of the first to ninth aspects, a heat sink 40, and an insulating thermally conductive element 41, the heat sink 40 being arranged to abut against the protrusion 22 of the retaining member 20, and the thermally conductive element 41 being disposed between the exposed surfaces 16 of the first wiring member 11 and the second wiring member 12 and the heat sink 40.

[0029] In a tenth aspect, a semiconductor device comprising a power module 10, a heat sink 40, and a heat-conducting element 41 can be provided. Attached Figure Description

[0030] Figure 1 This is a side sectional view showing the structure of the power module according to the first embodiment.

[0031] Figure 2 This is a side sectional view showing the structure of a semiconductor device.

[0032] Figure 3 This is a side sectional view used to illustrate the creepage distance of the comparative example.

[0033] Figure 4 It is a side sectional view used to illustrate the creepage distance when a protrusion is provided.

[0034] Figure 5 This is a side sectional view showing the structure of the protrusion in this second embodiment.

[0035] Figure 6 This is a side sectional view showing the structure of the protrusion in this third embodiment.

[0036] Figure 7 This is a side sectional view showing the structure of the protrusion in this fourth embodiment.

[0037] Figure 8 This is a side sectional view showing the structure of the connection terminal according to the fifth embodiment.

[0038] Figure 9 This is a side sectional view showing the structure of the connection terminal according to the sixth embodiment.

[0039] Figure 10 This is a side sectional view showing the structure of the connection terminal according to the seventh embodiment.

[0040] Figure 11 This is a side sectional view showing the structure of the power module according to the eighth embodiment.

[0041] Figure 12 This is a side sectional view showing the structure of a semiconductor device.

[0042] Figure 13 This is a side sectional view showing the structure of the power module according to the ninth embodiment.

[0043] Figure 14 This is a side sectional view showing the structure of a semiconductor device. Detailed Implementation

[0044] First Implementation Method

[0045] <Power Module>

[0046] like Figure 1 and Figure 2 As shown, the power module 10 includes a semiconductor element 2, a first wiring component 11, a second wiring component 12, a holding component 20, a housing 30, and a package 36.

[0047] The first wiring component 11 is composed of a conductive plate-shaped component. The first wiring component 11 has a mounting surface 15 and an exposed surface 16 exposed on the side opposite to the mounting surface 15. The semiconductor element 2 is mounted on the mounting surface 15 by solder 3.

[0048] The second wiring component 12 is composed of a plate-shaped component with conductivity. The second wiring component 12 is arranged with a gap relative to the first wiring component 11 in a direction orthogonal to the thickness direction of the first wiring component 11.

[0049] The second wiring component 12 has a mounting surface 15 and an exposed surface 16 exposed on the side opposite to the mounting surface 15. The exposed surface 16 of the second wiring component 12 is exposed on the same side as the exposed surface 16 of the first wiring component 11.

[0050] Semiconductor element 2 is, for example, an insulated-gate bipolar transistor (IGBT) or a diode. Figure 1 In the example shown, two semiconductor elements 2 are provided. The semiconductor elements 2 are connected to the second wiring component 12 via linear wiring 4.

[0051] One end of the external terminal 5 is electrically connected to the first wiring component 11 and the second wiring component 12. The other end of the external terminal 5 extends to protrude outside the housing 30. The other end of the external terminal 5 is connected to a control board (not shown).

[0052] The retaining member 20 is made of insulating components. The retaining member 20 is disposed between the first wiring member 11 and the second wiring member 12. The retaining member 20 retains the first wiring member 11 and the second wiring member 12.

[0053] The retaining member 20 has a retaining portion 21 and a protrusion 22. The retaining portion 21 is disposed between the first wiring member 11 and the second wiring member 12. The retaining portion 21 is located at... Figure 1 The upper and lower ends are each provided with a protrusion 22. The protrusion 22 and the retaining part 21 are integrally formed.

[0054] Figure 1 The protrusion 22 on the lower middle side protrudes from the exposed surface 16 of the first wiring component 11 and the second wiring component 12 toward the exposed surface 16 in the thickness direction. Figure 1 The protrusion 22 on the upper middle side protrudes from the mounting surface 15 of the first wiring component 11 and the second wiring component 12 toward the mounting surface 15 in the thickness direction.

[0055] The housing 30 is formed, for example, of an insulating resin material. The housing 30 covers the mounting surfaces 15 of the first wiring component 11 and the second wiring component 12, thereby defining an internal space 35. An encapsulation member 36 is disposed within the internal space 35 of the housing 30. The encapsulation member 36 is covered by the housing 30.

[0056] The housing 30 has an opposing portion 31 and a peripheral wall portion 32. The opposing portion 31 is opposite to the mounting surfaces 15 of the first wiring component 11 and the second wiring component 12. The peripheral wall portion 32 extends along the periphery of the opposing portion 31 toward the first wiring component 11 and the second wiring component 12. A stepped surface 33 is provided on the inner peripheral side of the peripheral wall portion 32 of the housing 30.

[0057] The package 36 is insulating. The package 36 is formed, for example, from a resin material. The package 36 covers the semiconductor element 2, the mounting surface 15 of the first wiring component 11, the mounting surface 15 of the second wiring component 12, and the linear wiring 4.

[0058] exist Figure 1 The left end of the first wiring component 11 located at the left end and the right end of the second wiring component 12 located at the right end are each supported by an insulating component 25. The insulating component 25 protrudes from the exposed surfaces 16 of the first wiring component 11 and the second wiring component 12 in the thickness direction of the exposed surfaces 16 by the same length as the protrusion 22 of the retaining component 20. The insulating component 25 abuts against the stepped surface 33 of the housing 30.

[0059] In this power module 10 configuration, the heat generated by the semiconductor element 2 can be directly dissipated from the exposed surface 16 of the first wiring component 11. Furthermore, by providing the protrusion 22, the creepage distance between the first wiring component 11 and the second wiring component 12 can be ensured.

[0060] Specifically, in Figure 3 In the comparative example shown, the retaining member 20 does not have a protrusion 22, and the creepage distance L' between the first wiring member 11 and the second wiring member 12 is the gap length between the first wiring member 11 and the second wiring member 12.

[0061] On the other hand, such as Figure 4 As shown, when the retaining component 20 is provided with the protrusion 22, the creepage distance L between the first wiring component 11 and the second wiring component 12 is the length along the outer peripheral surface of the protrusion 22 from the first wiring component 11 to the second wiring component 12, and L > L'.

[0062] Semiconductor Devices

[0063] like Figure 2 As shown, the semiconductor device 1 includes a power module 10, a heat sink 40, and a heat-conducting component 41.

[0064] The heat sink 40 is formed of a thermally conductive material such as copper or aluminum. The heat sink 40 is arranged to abut against the protrusion 22 of the retaining member 20 and the insulating member 25 in the power module 10. The power module 10 is fastened to the heat sink 40, for example, by fastening screws not shown.

[0065] The thermally conductive element 41 is insulating. The thermally conductive element 41 is, for example, thermal paste. The thermally conductive element 41 is disposed between the exposed surfaces 16 of the first wiring member 11 and the second wiring member 12 and the heat sink 40. At this time, the thickness of the thermally conductive element 41 can be set according to the protrusion amount of the protrusion 22. The first wiring member 11 and the second wiring member 12 are in thermal contact with the heat sink 40 through the thermally conductive element 41.

[0066] -Effects of the first implementation method-

[0067] According to the features of this embodiment, the heat generated in the semiconductor element 2 is directly dissipated from the exposed surface 16 of the first wiring member 11, thereby reducing thermal resistance. Furthermore, by providing the protrusion 22, the creepage distance between the first wiring member 11 and the second wiring member 12 can be ensured.

[0068] According to the features of this embodiment, the semiconductor element 2 can be protected by covering the package 36 with the housing 30.

[0069] Based on the features of this embodiment, a semiconductor device including a power module 10, a heat sink 40, and a heat-conducting element 41 can be provided.

[0070] Second Implementation Method

[0071] Hereinafter, the same symbols will be used to mark the parts that are the same as in the first embodiment, and only the differences will be explained.

[0072] like Figure 5 As shown, the retaining member 20 has a retaining portion 21 and a protrusion 22. The retaining portion 21 is disposed between the first wiring member 11 and the second wiring member 12. The retaining portion 21 is located at... Figure 1 A protrusion 22 is provided at the lower middle end. The protrusion 22 is integrally formed with the retaining part 21.

[0073] The protrusion 22 protrudes from the exposed surface 16 of the first wiring component 11 and the second wiring component 12 toward the exposed surface 16 in the thickness direction.

[0074] On the other hand, due to the location of the holding part 21 Figure 1The upper end does not have a protrusion 22, thus ensuring that the end of component 20 on the side of the mounting surface 15 of the first wiring component 11 is coplanar with the mounting surface 15. Here, since the mounting surface 15 side of the first wiring component 11 and the second wiring component 12 is encapsulated by the encapsulation 36, the creepage distance between the first wiring component 11 and the second wiring component 12 can also be ensured on the mounting surface 15 side.

[0075] -Effects of the second implementation method-

[0076] According to the features of this embodiment, when wire bonding is performed on the first wiring component 11 and the second wiring component 12, it is possible to suppress the retention component 20 from causing obstruction. In addition, it is possible to reduce the amount of retention component 20 used.

[0077] Third Implementation Method

[0078] like Figure 6 As shown, the retaining member 20 has a retaining portion 21 and a protrusion 22. The retaining portion 21 is disposed between the first wiring member 11 and the second wiring member 12. The retaining portion 21 is located at... Figure 1 The upper and lower ends are each provided with a protrusion 22. The protrusion 22 and the retaining part 21 are integrally formed.

[0079] Figure 1 The protrusion 22 on the upper middle side protrudes from the mounting surface 15 of the first wiring component 11 and the second wiring component 12 toward the mounting surface 15 in the thickness direction.

[0080] Figure 1 The protrusion 22 on the lower side protrudes from the exposed surfaces 16 of the first wiring component 11 and the second wiring component 12 toward the exposed surface 16 in the thickness direction. The lower protrusion 22 has a shape that gradually tapers toward the tip of the protrusion 22.

[0081] -Effects of the third implementation method-

[0082] According to the features of this embodiment, the heat generated in the semiconductor element 2 is dissipated in a manner that diffuses outward along the gradually tapering shape of the protrusion 22, thereby reducing thermal resistance.

[0083] Fourth Implementation Method

[0084] like Figure 7 As shown, the retaining member 20 has a protrusion 22. The protrusion 22 protrudes from the exposed surface 16 of the first wiring member 11 and the second wiring member 12 toward the exposed surface 16 in the thickness direction. In this way, the protrusion 22 is arranged at a position closer to the exposed surface 16 than the mounting surface 15 of the first wiring member 11 and the second wiring member 12.

[0085] -Effects of the Fourth Implementation -

[0086] According to the features of this embodiment, when wire bonding is performed on the first wiring component 11 and the second wiring component 12, it is possible to suppress the retention component 20 from causing obstruction. In addition, it is possible to reduce the amount of retention component 20 used.

[0087] Fifth Implementation Method

[0088] like Figure 8 As shown, the first wiring component 11 has a connection terminal 13. The connection terminal 13 is integrally formed with the first wiring component 11. The connection terminal 13 is located in the thickness direction of the first wiring component 11 ( Figure 8 It extends upwards (towards the center). The connecting terminal 13 passes through the opposing portion 31 of the housing 30. The connecting terminal 13 is connected to a control board (not shown).

[0089] An insulating member 25 is provided on the side of the connecting terminal 13 near the exposed surface 16 of the first wiring member 11. The insulating member 25 supports the connecting terminal 13. The insulating member 25 abuts against the heat sink 40.

[0090] -Effects of the fifth implementation method-

[0091] According to the features of this embodiment, by forming the first wiring component 11 and the connection terminal 13 as one unit, there is no need to perform a separate process of connecting the first wiring component 11 and the connection terminal 13, which can reduce the operation time.

[0092] The Sixth Implementation Method

[0093] like Figure 9 As shown, the first wiring component 11 has a connection terminal 13. The connection terminal 13 is integrally formed with the first wiring component 11. The connection terminal 13 extends in a direction orthogonal to the thickness direction of the first wiring component 11. After penetrating the peripheral wall portion 32 of the housing 30, the connection terminal 13 extends in the thickness direction of the first wiring component 11 ( Figure 9 It extends upwards (in the direction of the middle).

[0094] An insulating member 25 is provided on the side of the connecting terminal 13 near the exposed surface 16 of the first wiring member 11. The insulating member 25 supports the connecting terminal 13. The insulating member 25 abuts against the heat sink 40.

[0095] -Effects of the sixth implementation method-

[0096] According to the features of this embodiment, by forming the first wiring component 11 and the connection terminal 13 as one unit, there is no need to perform a separate process of connecting the first wiring component 11 and the connection terminal 13, which can reduce the operation time.

[0097] According to the features of this embodiment, even if the connection terminal 13 is extended in a direction orthogonal to the thickness direction of the first wiring member 11, the insulation distance between the connection terminal 13 and the heat sink 40 can be ensured because of the insulating member 25 provided on the side of the connection terminal 13 near the exposed surface 16 of the first wiring member 11.

[0098] The Seventh Implementation Method

[0099] like Figure 10 As shown, the first wiring component 11 has a connection terminal 13. The connection terminal 13 is integrally formed with the first wiring component 11. The connection terminal 13 extends from the mounting surface 15 of the first wiring component 11 toward the mounting surface 15 in the thickness direction, and then extends in a direction orthogonal to the thickness direction of the first wiring component 11. After penetrating the peripheral wall portion 32 of the housing 30, the connection terminal 13 extends in the thickness direction of the first wiring component 11 ( Figure 10 It extends upwards (in the direction of the middle).

[0100] An insulating member 25 is provided on the side of the connecting terminal 13 near the exposed surface 16 of the first wiring member 11. The insulating member 25 supports the connecting terminal 13. The insulating member 25 abuts against the heat sink 40.

[0101] -Effects of the Seventh Implementation Method-

[0102] According to the features of this embodiment, by bending the connection terminal 13 multiple times from the first wiring member 11 to extend it, the insulation distance between the connection terminal 13 and the heat sink 40 can be further extended.

[0103] The Eighth Implementation Method

[0104] like Figure 11 and Figure 12 As shown, the power module 10 includes a semiconductor element 2, a first wiring component 11, a second wiring component 12, a holding component 20, and a package 36. The second wiring component 12 is arranged with a gap relative to the first wiring component 11 in a direction orthogonal to the thickness direction of the first wiring component 11.

[0105] exist Figure 11 The first wiring component 11, located at the left end, has a connection terminal 13. The connection terminal 13 is integrally formed with the first wiring component 11. The connection terminal 13 is located in the thickness direction of the first wiring component 11. Figure 11 It extends upwards (in the direction of the middle).

[0106] exist Figure 12The second wiring component 12, located at the right end, has a connection terminal 13. The connection terminal 13 is integrally formed with the second wiring component 12. The connection terminal 13 is located in the thickness direction of the second wiring component 12. Figure 11 It extends upwards (in the direction of the middle).

[0107] The package 36 is formed of molding resin. The package 36 covers the semiconductor element 2, the mounting surface 15 of the first wiring component 11, the mounting surface 15 of the second wiring component 12, and the linear wiring 4.

[0108] The retaining component 20 and the package 36 are integrally formed. Specifically, when the package 36 is molded, the retaining component 20 and the package 36 are integrally formed by making the package 36 protrude from the gap between the first wiring component 11 and the second wiring component 12.

[0109] The retaining member 20 has a protrusion 22. The protrusion 22 protrudes from the exposed surface 16 of the first wiring member 11 and the second wiring member 12 toward the exposed surface 16 in the thickness direction.

[0110] -Effects of the Eighth Implementation Method-

[0111] According to the features of this embodiment, by integrally molding the retaining member 20 with the package 36, there is no need to separately provide the retaining member 20 as a separate component, thereby reducing costs.

[0112] Ninth Implementation Method

[0113] like Figure 13 and Figure 14 As shown, the power module 10 includes multiple wiring layers 50. The multiple wiring layers 50 are arranged with spacing in the board thickness direction. The wiring layers 50 include a first wiring layer 51 and a second wiring layer 52.

[0114] The first wiring layer 51 has a first wiring component 11, a second wiring component 12, a semiconductor element 2, and linear wiring 4. The first wiring component 11 and the second wiring component 12 have connection terminals 13.

[0115] The second wiring layer 52 has a first wiring component 11, a second wiring component 12, a semiconductor element 2, an electronic component 6, and linear wiring 4. The first wiring component 11 and the second wiring component 12 have connection terminals 13.

[0116] Electronic component 6 is, for example, a resistor, capacitor, inductor, or thermistor. Electronic component 6 is provided across the first wiring component 11 and the second wiring component 12 and is electrically connected by solder 3.

[0117] The first wiring component 11 or the second wiring component 12 in the first wiring layer 51 is electrically connected to the first wiring component 11 or the second wiring component 12 in the second wiring layer 52 through the conductive component 53.

[0118] The mounting surface 15 side of the first wiring layer 51, the mounting surface 15 side of the second wiring layer 52, and the exposed surface 16 side are encapsulated by a package 36. The package 36 is formed of molding resin. The package 36 is not provided on the exposed surface 16 side of the first wiring layer 51, and the exposed surface 16 of the first wiring layer 51 is exposed.

[0119] The retaining component 20 and the package 36 are integrally formed. Specifically, when the package 36 is molded, the retaining component 20 and the package 36 are integrally formed by making the package 36 protrude from the gap between the first wiring component 11 and the second wiring component 12.

[0120] The retaining member 20 has a protrusion 22. The protrusion 22 protrudes from the exposed surface 16 of the first wiring member 11 and the second wiring member 12 toward the exposed surface 16 in the thickness direction.

[0121] -Effects of the Ninth Implementation Method-

[0122] According to the features of this embodiment, by providing multiple wiring layers 50 with intervals in the thickness direction, the space in the thickness direction can be effectively utilized to achieve miniaturization of the module.

[0123] Other Implementation Methods

[0124] The embodiments and variations have been described above; however, it should be understood that various changes can be made to the manner and specific details without departing from the spirit and scope of the claims. Furthermore, appropriate combinations or substitutions can be made to the elements involved in the above embodiments, variations, and other embodiments. The terms "first," "second," "third," etc., in the specification and claims are only used to distinguish statements containing these terms and are not intended to limit the number or order of the statements.

[0125] -Industry Applicability-

[0126] In summary, this disclosure is useful for power modules and semiconductor devices.

[0127] - Symbol Explanation -

[0128] 1. Semiconductor device

[0129] 2 Semiconductor components

[0130] 10 Power Modules

[0131] 11 First wiring component

[0132] 12 Second wiring component

[0133] 13 Connecting terminals

[0134] 15 mounting surfaces

[0135] 16. Showing face

[0136] 20 Retaining components

[0137] 22. Protrusion

[0138] 25 Insulating components

[0139] 30. Housing

[0140] 36 Package

[0141] 40 Radiator

[0142] 41 Thermal conductive components

[0143] 50 Wiring Layer

Claims

1. A power module, characterized in that: The power module includes a semiconductor element (2), a first wiring component (11), a second wiring component (12), an insulation retaining component (20), and an insulation package (36). The first wiring component (11) is composed of a plate-shaped component with conductivity and has a mounting surface (15) on which the semiconductor element (2) is mounted and an exposed surface (16) exposed on the side opposite to the mounting surface (15). The second wiring component (12) is composed of a plate-shaped component with conductivity. It is arranged with a gap in a direction orthogonal to the thickness direction of the first wiring component (11) relative to the first wiring component (11), and has an exposed surface (16) exposed on the same side as the exposed surface (16) of the first wiring component (11). The retaining member (20) is arranged between the first wiring member (11) and the second wiring member (12) to retain the first wiring member (11) and the second wiring member (12), and has a protrusion (22) that protrudes from the exposed surface (16) toward the side of the exposed surface (16) in the plate thickness direction. The package (36) at least covers the semiconductor element (2), and the mounting surfaces (15) of the first wiring component (11) and the second wiring component (12).

2. The power module according to claim 1, characterized in that: The end of the retaining member (20) on the side of the mounting surface (15) of the first wiring member (11) is coplanar with the mounting surface (15) or is arranged at a position on the side of the exposed surface (16) closer to the mounting surface (15).

3. The power module according to claim 1 or 2, characterized in that: The protrusion (22) has a shape that gradually tapers toward the top of the protrusion (22).

4. The power module according to any one of claims 1 to 3, characterized in that: The power module includes a connection terminal (13) integrally formed with the first wiring component (11).

5. The power module according to claim 4, characterized in that: The connection terminal (13) extends in a direction orthogonal to the thickness direction of the first wiring component (11). The power module includes an insulating component (25) disposed on the side of the connection terminal (13) near the exposed surface (16) of the first wiring component (11).

6. The power module according to claim 4, characterized in that: The connection terminal (13) extends from the mounting surface (15) of the first wiring component (11) toward the mounting surface (15) in the thickness direction, and then extends in a direction orthogonal to the thickness direction of the first wiring component (11).

7. The power module according to any one of claims 4 to 6, characterized in that: The wiring layer (50), including the first wiring component (11) and the second wiring component (12), is provided with multiple layers spaced apart in the thickness direction of the board.

8. The power module according to any one of claims 1 to 7, characterized in that: The power module includes a housing (30) covering the package (36).

9. The power module according to any one of claims 1 to 7, characterized in that: The package (36) is formed of molding resin. The retaining component (20) is integrally formed with the encapsulation component (36).

10. A semiconductor device, characterized in that: The semiconductor device includes the power module (10) as described in any one of claims 1 to 9, the heat sink (40), and the insulating thermally conductive element (41). The radiator (40) is arranged to abut against the protrusion (22) of the retaining member (20). The heat-conducting element (41) is arranged between the exposed surface (16) of the first wiring component (11) and the second wiring component (12) and the heat sink (40).

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