Wafer test control method, system and wafer test equipment

Abstract

The application provides a wafer test control method and system and a wafer test device, and relates to the technical field of semiconductor testing.The method realizes uniform heating of multiple preheating areas in a wafer to be tested through a temperature pin assembly in a wafer test device, realizes accurate control of the preheating process of the wafer to be tested, and effectively reduces the preheating operation time.Meanwhile, the method cools down specific areas of a probe array through a blowing assembly in the wafer test device, thereby greatly relieving the expansion amount of the probe array and improving the overall test efficiency of the wafer test device.

Description

Technical Field

[0001] This invention relates to the field of semiconductor testing technology, and in particular to a wafer testing control method, system, and wafer testing equipment. Background Technology

[0002] During high-temperature testing of wafers in semiconductor chips, the probe array, as the testing interface, is exposed to ultra-high temperature environments (such as above 150°C) for a long time. Due to thermal expansion, the probe array in the probe card is misaligned with the wafer, affecting the testing accuracy and stability.

[0003] Existing technologies mainly employ preheating of the target area of ​​the wafer to effectively control the expansion of the probe array; however, the preheating operation in existing technologies requires a long time to reach temperature stability, and the preheating control is relatively crude, lacking a means to uniformly preheat the central area of ​​the wafer, resulting in a low overall equipment effectiveness (OEE) of the wafer testing equipment. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a wafer testing control method, system, and wafer testing equipment. The method uses a temperature needle assembly in the wafer testing equipment to uniformly heat multiple preheating areas in the wafer under test, thereby achieving precise control of the preheating process of the wafer under test and effectively reducing the preheating operation time. At the same time, the method uses an air blowing assembly in the wafer testing equipment to cool specific areas of the probe array, thereby significantly alleviating the expansion of the probe array and improving the overall testing efficiency of the wafer testing equipment.

[0005] In a first aspect, embodiments of the present invention provide a wafer testing control method, which is applied in a controller of a wafer testing equipment; the wafer testing equipment further includes at least: an air blowing assembly, a temperature needle assembly, and a probe array; the method includes: When the wafer under test is detected to be in the bearing area of ​​the wafer testing equipment, the temperature needle assembly is controlled to descend to multiple preheating areas of the wafer under test. After the temperature needle assembly contacts each preheating area, the temperature needle assembly is controlled to heat each preheating area according to the preset heating rate. When the temperature value of each preheating zone is detected to meet the preset temperature threshold condition, the probe array is controlled to descend to the elastic contact position of the target pad in the wafer under test, and the air blowing component is controlled to blow cooling airflow to the bearing surface of the probe array according to the corresponding airflow parameters. When the cooling airflow at the bearing surface is detected to meet the preset flow threshold condition, the control probe array sends the test command to the wafer under test through the target pad.

[0006] Optionally, when the wafer under test is detected to be within the carrying area of ​​the wafer testing equipment, the temperature needle assembly is controlled to descend to multiple preheating areas of the wafer under test, including: Obtain the base of the wafer testing equipment and determine the bearing area of ​​the wafer testing equipment based on the wafer stage in the base; The light source and illumination sensor contained in the wafer testing equipment are acquired; wherein the light source and illumination sensor are respectively set on both sides of the bearing area; Control the light source to emit light towards the bearing area, and control the light sensor to acquire the light value; If the illumination value is less than the preset illumination threshold, the wafer under test is determined to be in the bearing area; A coordinate axis perpendicular to each other is constructed with the center of the wafer to be tested as the origin. Multiple preheating areas with equal distance from the origin are obtained on the coordinate axis, and the temperature needle assembly is controlled to descend to multiple preheating areas.

[0007] Optionally, after the heating needle assembly comes into contact with each preheating zone, the heating needle assembly is controlled to heat each preheating zone according to a preset heating rate, including: When the temperature needle assembly is detected to be in contact with each preheating zone, the ceramic heating core and NTC temperature sensor built into the temperature needle assembly are put into working state. The heating rate and target temperature of the temperature needle assembly are determined by the type parameters of the wafer under test. Based on the target temperature, the ceramic heating core is controlled to heat each preheating zone according to the heating rate, and the NTC temperature sensor is controlled to obtain the temperature value of each preheating zone in real time. When the detected temperature value is the same as the target temperature, the ceramic heating core is controlled to maintain a constant temperature in each preheating zone based on the target temperature.

[0008] Optionally, when the temperature values ​​of each preheating zone are detected to meet a preset temperature threshold condition, the method further includes: The temperature fluctuation values ​​of each preheating zone are calculated using the real-time temperature values ​​obtained by the NTC temperature sensor. When the temperature fluctuation value is not greater than the preset temperature fluctuation threshold and the duration is greater than the preset temperature duration threshold, the ceramic heating core and NTC temperature sensor are put into sleep mode. The temperature needle assembly is controlled to rise to a preset initial area in the wafer testing equipment so that the temperature needle assembly no longer comes into contact with the corresponding preheating areas.

[0009] Optionally, the probe array is controlled to descend to the elastic contact position of the target pad in the wafer under test, including: The probe surface of the probe array is determined based on the tip region of all probes in the probe array, and the corresponding target pad in the wafer under test is determined according to the functional parameters of each probe. The elastic contact position of the target pad is determined by the type parameters of the wafer under test, and the probe array is driven to approach the target pad. When the probe surface is detected to have descended to the elastic contact position of the target pad, and when all probes in the probe array are detected to have completed alignment contact with the corresponding target pad, the probe array is controlled to stop driving.

[0010] Optionally, the blowing assembly is controlled to blow cooling airflow onto the bearing surface of the probe array according to corresponding airflow parameters, including: When the probe array is detected to be stationary, the slit cooling nozzle built into the air blowing assembly is put into standby mode. The cooling area corresponding to the slit cooling nozzle is determined from the bearing surface of the probe array, and the target cooling rate of the cooling area is determined by the thermal expansion parameters of the probe array. The working pressure and gas flow rate of the slit cooling nozzle are determined based on the target cooling rate, and the airflow parameters of the blowing assembly are determined based on the working pressure and gas flow rate. The cooling airflow is directed to the cooling area by controlling the airflow parameters of the slit cooling nozzle; the temperature of the cooling airflow is lower than the target temperature of the temperature needle assembly.

[0011] Optionally, when the cooling airflow at the bearing surface is detected to meet the preset flow threshold condition, the step of controlling the probe array to send the test command to the wafer under test through the target pad includes: The flow rate fluctuation value of the cooling airflow at the bearing surface is obtained in real time by using the flow sensor built into the air blowing assembly, and the needle expansion amount of the probe array is obtained in real time by using the displacement sensor built into the probe array. When the detected flow fluctuation value is not greater than the preset flow fluctuation threshold and the pin expansion amount is not greater than the preset expansion threshold, the control probe array sends the test command to the wafer under test through the target pad to test the chip electrical performance of the wafer under test.

[0012] Optionally, after the control probe array sends test commands to the wafer under test via the target pads, the method further includes: Once the wafer under test has completed the chip electrical performance testing process, the blowing assembly is controlled to stop blowing cooling airflow onto the carrier surface of the probe array. The probe array is controlled to rise to a preset initial area in the wafer testing equipment so that the probe array no longer contacts the target pad.

[0013] In a second aspect, the present invention provides a wafer testing control system, which is applied in the controller of a wafer testing equipment; the wafer testing equipment further includes at least: an air blowing assembly, a temperature needle assembly, and a probe array; the system includes: Heating control module: When the wafer under test is detected to be in the bearing area of ​​the wafer testing equipment, the heating needle assembly is controlled to descend to multiple preheating areas of the wafer under test, and after the heating needle assembly contacts each preheating area, the heating needle assembly is controlled to heat each preheating area according to a preset heating rate. Cooling control module: When the temperature value of each preheating area is detected to meet the preset temperature threshold condition, the probe array probe surface is controlled to descend to the elastic contact position of the target pad in the wafer under test, and the air blowing component is controlled to blow cooling airflow to the bearing surface of the probe array according to the corresponding airflow parameters. Test control module: When the cooling airflow at the bearing surface is detected to meet the preset flow threshold condition, the probe array is controlled to send the test command to the wafer under test through the target pad.

[0014] Thirdly, embodiments of the present invention also provide a wafer testing device, which includes at least: an air blowing assembly, a temperature needle assembly, a probe array, and a controller; wherein the controller is connected to the air blowing assembly, the temperature needle assembly, and the probe array respectively; The controller includes a processor and a memory, the memory storing computer-executable instructions that can be executed by the processor, the processor executing the computer-executable instructions to implement the steps of the wafer test control method provided in the first aspect.

[0015] This invention provides a wafer testing control method, system, and wafer testing equipment, applied in the controller of a wafer testing equipment. The wafer testing equipment further includes at least: an air blowing assembly, a temperature needle assembly, and a probe array. During the testing of the wafer under test using the aforementioned wafer testing equipment, when the wafer under test is detected to be in the bearing area of ​​the wafer testing equipment, the temperature needle assembly is controlled to descend to multiple preheating areas of the wafer under test. After the temperature needle assembly contacts each preheating area, it is controlled to heat each preheating area according to a preset heating rate. When the temperature value of each preheating area is detected to meet a preset temperature threshold condition, the probe array's detection surface is controlled to descend to the elastic contact position of the target pad in the wafer under test. The air blowing assembly is then controlled to blow cooling airflow onto the bearing surface of the probe array according to corresponding airflow parameters. When the cooling airflow at the bearing surface is detected to meet a preset flow rate threshold condition, the probe array is controlled to send a test command to the wafer under test through the target pad. This method uses a heating needle assembly in the wafer testing equipment to uniformly heat multiple preheating areas of the wafer under test, enabling precise control of the preheating process and effectively reducing preheating operation time. At the same time, the method uses an air blowing assembly in the wafer testing equipment to cool specific areas of the probe array, thereby significantly reducing the expansion of the probe array and improving the overall testing efficiency of the wafer testing equipment.

[0016] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention are realized and obtained through the structures particularly pointed out in the description and the drawings.

[0017] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0018] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 A flowchart of a wafer testing control method provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of a wafer testing and control system provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the structure of a wafer testing device provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of the structure of a controller provided in an embodiment of the present invention.

[0020] icon: 100 - Heating control module; 200 - Cooling control module; 300 - Test control module; 101 - Processor; 102 - Memory; 103 - Bus; 104 - Communication interface. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] To facilitate understanding of this embodiment, a wafer testing control method disclosed in this invention will first be introduced. This method is applied in the controller of a wafer testing equipment; the wafer testing equipment further includes at least: an air blowing assembly, a temperature needle assembly, and a probe array. Based on this, the method is as follows... Figure 1As shown, it includes: Step S101: When the wafer under test is detected to be in the bearing area of ​​the wafer testing equipment, the temperature needle assembly is controlled to descend to multiple preheating areas of the wafer under test, and after the temperature needle assembly comes into contact with each preheating area, the temperature needle assembly is controlled to heat each preheating area according to a preset heating rate.

[0023] After confirming that the wafer under test has been stably placed on the support station of the wafer testing equipment, the temperature needle assembly is first driven to descend vertically, so that its multiple temperature needles respectively contact multiple pre-defined preheating areas on the surface of the wafer under test. These preheating areas can cover several points symmetrically distributed around the center and periphery of the wafer to ensure uniform heating.

[0024] After confirming that each temperature needle tip forms good thermal contact with the corresponding preheating area, the controller outputs a heating control signal to the temperature needle assembly, causing it to synchronously heat each preheating area according to the preset heating rate curve. This enables the wafer to rapidly and uniformly rise from room temperature to the target test temperature, avoiding the problems of center heating lag and edge overheating that exist in traditional overall preheating methods.

[0025] Step S102: When the temperature value of each preheating area is detected to meet the preset temperature threshold condition, the probe array is controlled to descend to the elastic contact position of the target pad in the wafer under test, and the air blowing component is controlled to blow cooling airflow to the bearing surface of the probe array according to the corresponding airflow parameters.

[0026] When the temperature sensing module reports that the real-time temperature values ​​of each preheating zone have reached and stabilized within the preset temperature threshold range, the controller determines that the preheating stage is complete and then proceeds to the test preparation stage. At this time, the controller drives the probe array to descend, causing the probe surface (i.e., the probe tip) at the bottom of the probe array to gradually approach the target pad on the wafer under test, and stops descending when a set amount of elastic contact is formed between the probe tip and the target pad. Simultaneously or immediately afterward, the controller activates the air blowing component, continuously blowing cooling airflow onto the upper bearing surface of the probe array according to preset airflow parameters (including airflow temperature, flow rate, pressure, and jet angle). This forced convection heat transfer cools the non-contact ends of the probe array to offset the heat conducted from the wafer side, thereby suppressing thermal expansion deformation of the probe array due to overall heating.

[0027] Step S103: When the cooling airflow at the bearing surface is detected to meet the preset flow threshold condition, the control probe array sends the test command to the wafer under test through the target pad.

[0028] When the flow detection device detects that the actual flow rate of the cooling airflow at the probe array bearing surface reaches and is stably maintained at the preset flow rate threshold, it indicates that the thermal expansion of the probe array has been effectively controlled within the allowable range, and the test conditions are deemed ready. Subsequently, the controller outputs a test start command to the probe array, so that the test signal is transmitted through each probe of the probe array and through the target pads in elastic contact with them to the circuit under test inside the wafer, officially starting the high-temperature electrical performance test of the wafer. During this process, the heating of the temperature probe assembly and the cooling of the air blowing assembly operate synchronously and continuously to maintain the dual stability of the wafer test temperature and the thermal deformation of the probe array, ensuring the accuracy and reliability of the test data.

[0029] The positional relationships between the air blowing assembly, temperature needle assembly, and probe array in the wafer testing equipment can be found in the following reference. Figure 3 Based on this, when the wafer under test is detected to be in the bearing area of ​​the wafer testing equipment, the temperature needle assembly is controlled to descend to multiple preheating areas of the wafer under test, including the following steps: Step S201: Obtain the base of the wafer testing equipment and determine the bearing area of ​​the wafer testing equipment based on the wafer stage in the base.

[0030] First, the structural parameters and installation coordinates of the base of the wafer testing equipment are obtained. Based on the geometric contour and positioning reference of the wafer stage on the base, the spatial range and center position of the bearing area used to support the wafer under test are determined. The wafer stage is equipped with a vacuum adsorption channel and an edge positioning mechanism to ensure the positional accuracy and stability of the wafer under test within the bearing area, providing a reference for the precise alignment of the subsequent temperature probe assembly.

[0031] Step S202: Obtain the light source and illumination sensor contained in the wafer testing equipment; wherein the light source and illumination sensor are respectively set on both sides of the bearing area.

[0032] The controller further acquires the installation and operating parameters of the light source and illumination sensor configured in the wafer testing equipment. The light source and illumination sensor are respectively positioned on opposite sides of the support area, with their optical axes collinear and horizontally penetrating the detection plane of the support area, forming a through-beam optical path detection structure. The light source can be an infrared LED or a visible light source, and the illumination sensor correspondingly uses a photodiode or phototransistor to achieve non-contact optical detection of the presence of a wafer within the support area.

[0033] Step S203: Control the light source to emit light towards the bearing area, and control the light sensor to acquire the light value.

[0034] The controller outputs a drive signal to the light source, controlling it to emit detection light of a preset intensity towards the support area. Simultaneously, the light sensor is activated, collecting the light intensity value incident on the photosensitive surface after passing through the support area, and feeding this light value back to the controller in real time. In the initial state without wafer obstruction, the light value received by the light sensor is at a high level; when a wafer enters the support area and partially blocks the light path, the light intensity received by the light sensor will decrease.

[0035] Step S204: If the illumination value is less than the preset illumination threshold, then the wafer under test is determined to be in the bearing area.

[0036] The controller compares the real-time collected illumination value with a pre-stored preset illumination threshold. If the detected illumination value is less than the preset threshold, it indicates that the light path within the support area is blocked by the wafer under test, thus determining that the wafer is within the support area and its position is basically in place. Conversely, if the illumination value is greater than or equal to the preset threshold, it is determined that there is currently no wafer within the support area, and the controller continues to execute the detection cycle until the wafer is detected in place. In addition, the vacuum pressure feedback signal from the wafer stage can be used for dual verification to improve the reliability of wafer in-place detection and avoid false judgments.

[0037] Step S205: Construct mutually perpendicular coordinate axes with the center of the wafer to be tested as the origin, obtain multiple preheating areas on the coordinate axes that are equidistant from the origin, and control the temperature needle assembly to descend to multiple preheating areas.

[0038] After confirming that the wafer under test is within the bearing area, an orthogonal coordinate system is constructed in the wafer plane with the geometric center of the wafer as the origin, consisting of mutually perpendicular X and Y axes. Based on this coordinate system, the controller selects multiple points on the coordinate axes equidistant from the origin as preheating areas. Specifically, four preheating hot spots are selected, located symmetrically at equidistant points from the origin in the first, second, third, and fourth quadrants, with coordinates set to (±30mm, ±30mm). These spots are arranged around the wafer center in a 90° interval, precisely covering the heat-sensitive area at the wafer center and ensuring uniform preheating. The heating needle assembly includes four sets of heating needle units, corresponding one-to-one with the four preheating areas. Each heating needle unit is a φ2.5mm cylindrical heating probe with a built-in 15W ceramic heating core and an NTC temperature sensor. The heating needle assembly is driven to descend vertically, allowing the tips of each heating needle unit to precisely descend and contact the surface of the corresponding preheating area, preparing for subsequent contact heating preheating.

[0039] Optionally, after the warming needle assembly comes into contact with each preheating zone, the warming needle assembly is controlled to heat each preheating zone according to a preset heating rate, including the following steps: Step S301: When the temperature needle assembly is detected to be in contact with each preheating zone, the ceramic heating core and NTC temperature sensor built into the temperature needle assembly are put into working state.

[0040] Once the controller confirms through pressure feedback or displacement detection that each temperature needle unit in the temperature needle assembly has established reliable physical contact with the corresponding preheating area on the surface of the wafer under test, it immediately outputs a start-up command to the temperature needle assembly, controlling the ceramic heating core and NTC temperature sensor built into each temperature needle unit to simultaneously enter the working state. The ceramic heating core has a rated power of 15W and features rapid thermal response characteristics, enabling it to conduct heat to the wafer preheating area through the temperature needle tip in a short time. The NTC temperature sensor has a temperature measurement accuracy of ±0.1℃ and is used to collect temperature data of the preheating area in real time, providing feedback for subsequent closed-loop temperature control.

[0041] Step S302: Determine the heating rate and target temperature of the temperature needle assembly based on the type parameters of the wafer to be tested.

[0042] The controller reads the type parameters of the wafer under test, including but not limited to wafer size (e.g., 8-inch, 12-inch), process node, substrate material thickness, and target test temperature level. Based on these type parameters, the appropriate heating rate and target temperature for the heating element assembly are matched and determined from a pre-stored process parameter library. Specifically, for a 12-inch ultra-high temperature test scenario, the preset heating rate can be set to 1℃ / s, and the target temperature can be set to 155℃ to achieve rapid preheating while ensuring controllable wafer thermal stress. Different types of wafers correspond to different combinations of heating rates and target temperatures, thereby achieving differentiated and refined configuration of process parameters.

[0043] Step S303: Based on the target temperature, control the ceramic heating core to heat each preheating zone according to the heating rate, and control the NTC temperature sensor to obtain the temperature value of each preheating zone in real time.

[0044] Based on the determined target temperature, a PWM heating control signal is output to the ceramic heating core of each heating needle unit, controlling it to synchronously contact and heat each preheating area according to a preset heating rate. During the heating process, the controller continuously collects the temperature value of the corresponding preheating area in real time through the NTC temperature sensor built into each heating needle unit, compares the collected real-time temperature with the target heating curve, and dynamically adjusts the output power of the ceramic heating core to ensure that the actual heating rate is consistent with the preset value. This closed-loop control method avoids wafer thermal shock caused by excessively rapid heating or low preheating efficiency caused by excessively slow heating, balancing preheating speed and temperature uniformity.

[0045] Step S304: When the detected temperature value is the same as the target temperature, the ceramic heating core is controlled to perform constant temperature treatment on each preheating zone based on the target temperature.

[0046] When the controller detects that the real-time temperature values ​​of each preheating zone have reached the target temperature (e.g., 155℃), it switches the ceramic heating core from heating mode to constant temperature holding mode. During the constant temperature holding phase, based on real-time feedback from the NTC temperature sensor, a PID control algorithm dynamically adjusts the heating power of the ceramic heating core to keep the temperature of each preheating zone stable near the target temperature. When the system detects that the temperature fluctuation in the wafer center region is ≤±0.2℃ and this stable state lasts for 5 seconds, the preheating process is deemed fully completed, and the next stage of test preparation can proceed. This constant temperature holding mechanism ensures that the wafer has a uniform and stable temperature field before formal testing, providing a temperature basis for the accurate alignment and reliable testing of the subsequent probe array.

[0047] Optionally, when the temperature values ​​of each preheating zone are detected to meet the preset temperature threshold conditions, the method further includes the following steps: Step S401: Calculate the temperature fluctuation value of each preheating zone using the temperature value obtained in real time by the NTC temperature sensor.

[0048] During the temperature holding phase, the temperature fluctuations in each preheating zone are continuously monitored and calculated using real-time temperature values ​​collected by the NTC temperature sensors built into each temperature needle unit. Specifically, the controller statistically analyzes the temperature data within a preset sampling period using a sliding time window, calculating the difference between the maximum and minimum temperature values ​​for each preheating zone within that time window, or calculating the deviation of the temperature value from the target temperature, thereby obtaining the temperature fluctuation value for each preheating zone. This real-time calculation of temperature fluctuation values ​​allows for a quantitative assessment of the temperature stability of the wafer preheating zone, providing data support for determining preheating completion.

[0049] Step S402: When the temperature fluctuation value is not greater than the preset temperature fluctuation threshold and the duration is greater than the preset temperature duration threshold, control the ceramic heating core and NTC temperature sensor to be in sleep mode.

[0050] When the controller detects that the temperature fluctuation values ​​of each preheating zone are not greater than the preset temperature fluctuation threshold, and the duration of this stable state is greater than the preset temperature duration threshold, it determines that the wafer preheating process has been fully completed, and the temperature field of the preheating zone has reached a uniform and stable state. In a specific embodiment, the temperature fluctuation threshold can be set to ±0.2℃, and the temperature duration threshold can be set to 5s. That is, when the temperature fluctuation amplitude of each preheating zone is controlled within ±0.2℃ and this state lasts for more than 5s, the preheating is confirmed to be up to standard. At this time, the controller outputs a sleep control command to each temperature needle unit, controlling the built-in ceramic heating core to stop heating output, and simultaneously controlling the NTC temperature sensor to enter a low-power sleep state to save energy and avoid potential interference from continuous temperature measurement to subsequent testing processes.

[0051] Step S403: Control the temperature needle assembly to rise to the preset initial area in the wafer testing equipment so that the temperature needle assembly no longer contacts the corresponding preheating areas.

[0052] After confirming preheating completion and shutting down the heating and temperature measurement modules, the controller drives the temperature probe assembly to rise vertically to the preset initial standby area in the wafer testing equipment. As the temperature probe assembly rises, the tips of each temperature probe unit gradually disengage from the corresponding preheating area on the surface of the wafer under test, eventually retracting completely to a safe height. This prevents mechanical interference or accidental damage to the wafer surface during subsequent probe array descent testing. After this reset action, the temperature probe assembly remains in the initial area until the preheating process of the next wafer begins, thus decoupling the timing of temperature probe preheating and probe testing, ensuring a smooth transition in the testing process.

[0053] Optionally, controlling the probe array to descend to the elastic contact position of the target pad in the wafer under test includes the following steps: Step S501: Determine the probe surface of the probe array based on the probe tip area of ​​all probes in the probe array, and determine the corresponding target pad in the wafer under test according to the functional parameters of each probe.

[0054] Based on the planar area formed by the tips of all probes in the probe array, the detection surface of the probe array is determined. This detection surface serves as the overall reference surface for electrical contact between the probe array and the wafer. Simultaneously, the controller distinguishes different types of probes, such as power probes, ground probes, signal probes, and test probes, according to their functional parameters. It then matches and determines the corresponding target pads from the pad layout information of the wafer under test, establishing a one-to-one correspondence between probes and pads.

[0055] Under the dedicated machine and dedicated card matching scheme, the controller obtains the predicted amount of needle card expansion in advance and sets the expansion back-off amount during needle card alignment to 4μm in advance to compensate for thermal expansion offset under high temperature environment and ensure alignment accuracy under high temperature conditions.

[0056] Step S502: Determine the elastic contact position of the target pad by the type parameters of the wafer under test, and drive the probe array to approach the target pad.

[0057] The controller calculates and determines the elastic contact position of the target pad based on the type parameters of the wafer under test, including wafer size, pad specifications, and probe mechanical parameters, combined with a preset overtravel amount. The elastic contact position is the target position where the probe tip continues to press down a certain distance after contacting the pad surface to form a reliable electrical contact. In ultra-high temperature testing scenarios, the controller also compensates for the thermal deformation characteristics of the pin holder, which is made of aluminum silicon carbide (AlSiC) composite ceramic material with a coefficient of thermal expansion of 3.1 × 10⁻⁶. -6 The temperature is / ℃, which is highly matched to the thermal expansion coefficient of silicon wafers. Its own thermal deformation can be controlled within 3μm, effectively reducing the impact of structural deformation on the contact position accuracy. After determining the elastic contact position, the controller drives the probe array to descend vertically, gradually approaching the target pad on the wafer under test.

[0058] Step S503: When the probe surface is detected to have descended to the elastic contact position of the target pad, and when all probes in the probe array are detected to have completed the alignment contact with the corresponding target pad, the probe array is controlled to stop driving.

[0059] During the descent of the probe array, the controller monitors the descent position and contact status of the probe array in real time through displacement detection or force feedback mechanisms. When the probe array's detection surface is detected to have descended to the elastic contact position of the target pad, and the contact resistance detection or alignment confirmation mechanism confirms that all probes in the probe array have completed alignment and contact with the corresponding target pads, forming stable elastic electrical contact, the controller immediately outputs a stop command to the drive mechanism, controlling the probe array to stop descending further. At this time, each probe is in an elastic compression state with a set overstroke amount, which ensures low-resistance and reliable electrical contact while avoiding probe damage or pad deformation caused by excessive pressure, providing a reliable contact basis for the accurate execution of subsequent high-temperature electrical performance tests.

[0060] Optionally, controlling the air blowing assembly to blow cooling airflow onto the bearing surface of the probe array according to corresponding airflow parameters includes the following steps: Step S601: When the probe array is detected to be stationary, the slit cooling nozzle built into the air blowing assembly is put into standby mode.

[0061] Once the controller detects that the probe array has descended to the elastic contact position of the target pad and is stationary, it immediately outputs a control command to the air blowing assembly, controlling the built-in slit cooling nozzle in the air blowing assembly to enter a standby state. The main body of the air blowing device is an annular air passage chamber, embedded in the peripheral mounting groove on the upper part of the pin card PCB substrate. Its installation position is 15mm away from the edge of the effective test area of ​​the probe, and it is precisely positioned with the pin card substrate by four sets of positioning pins. The slit cooling nozzle is a slit-type stainless steel nozzle with a slit width of 1.2mm and a length matching the effective area of ​​the 12-inch wafer test pin card (300mm). The nozzle spray angle is set to 60° and the entire nozzle is tilted downwards by 15° to ensure that the cooling airflow evenly covers the probe area while avoiding disturbing the probe.

[0062] Step S602: Determine the cooling area corresponding to the slit cooling nozzle from the bearing surface of the probe array, and determine the target cooling rate of the cooling area through the thermal expansion parameters of the probe array.

[0063] The controller determines the cooling region corresponding to the position of the slit cooling nozzle within the bearing surface area of ​​the probe array. This cooling region covers the upper bearing surface and surrounding area of ​​the probe array and is the main area of ​​action for the cooling airflow. Simultaneously, the controller acquires the thermal expansion parameters of the probe array, including the coefficient of thermal expansion of the probe material, the current operating temperature, and the maximum allowable expansion threshold. Combined with a preset expansion control target, the controller calculates and determines the target cooling rate required for the cooling region. In one specific embodiment, the target is to reduce the local temperature rise of the probe clip by approximately 12°C, reducing the corresponding expansion from 160 μm to 130 μm, thereby effectively improving testing accuracy.

[0064] Step S603: Determine the working pressure and gas flow rate of the slit cooling nozzle based on the target cooling rate, and determine the airflow parameters of the blowing assembly through the working pressure and gas flow rate.

[0065] Based on the target cooling rate, and combined with the structural parameters and heat transfer characteristics of the slit cooling nozzle, the controller calculates and determines the working pressure and gas flow rate of the slit cooling nozzle using a pre-stored thermodynamic model. Specifically, for ultra-high temperature testing scenarios, the working pressure can be set to 0.55 MPa and the gas flow rate to 110 NL / min to meet the requirements of the target cooling rate.

[0066] Specifically, the controller determines the complete set of airflow parameters for the blowing assembly based on the determined working pressure and gas flow rate, combined with the setpoint temperature of the cooling gas (e.g., 25±1℃). The blowing device integrates a flow regulating valve and a PT100 temperature sensor, forming a closed-loop feedback control that adjusts the air path parameters in real time to match ambient temperature fluctuations.

[0067] Step S604: Control the slit cooling nozzle to blow cooling airflow into the cooling area by controlling the airflow parameters; wherein the temperature of the cooling airflow is lower than the target temperature of the temperature needle assembly.

[0068] Based on the determined airflow parameters, the controller outputs a control signal to the air blowing assembly, controlling the slit cooling nozzles to continuously blow cooling airflow into the cooling area. The temperature of this cooling airflow (e.g., 25±1℃) is significantly lower than the target temperature of the probe assembly (e.g., 155℃), thereby cooling the probe array's supporting surface through forced convection heat transfer, offsetting the heat conducted from the wafer side, and suppressing the thermal expansion and deformation of the probe array. During the cooling process, the controller collects real-time temperature and flow data of the cooling airflow using a PT100 temperature sensor and a flow sensor, and dynamically adjusts the opening of the flow regulating valve based on closed-loop control logic to ensure that the cooling airflow parameters are stably maintained within the set range, thus achieving precise and continuous control of the probe array's thermal expansion.

[0069] Optionally, when the cooling airflow at the bearing surface is detected to meet the preset flow threshold condition, the step of controlling the probe array to send the test command to the wafer under test through the target pad includes the following steps; Step S701: Use the flow sensor built into the air blowing assembly to obtain the flow fluctuation value of the cooling airflow at the bearing surface in real time, and use the displacement sensor built into the probe array to obtain the needle expansion amount of the probe array in real time.

[0070] The controller utilizes a flow sensor built into the air blowing assembly to collect real-time data on the actual flow rate of the cooling airflow at the probe array's bearing surface. Based on a sliding time window, it calculates the flow rate fluctuation value of the cooling airflow to monitor its stability. The air blowing device integrates a flow regulating valve and a PT100 temperature sensor, forming a closed-loop feedback control that can adjust air path parameters in real-time to match ambient temperature fluctuations. Simultaneously, the controller uses a displacement detection mechanism or visual alignment system built into the probe array to acquire the probe clip expansion amount in real-time, i.e., the displacement offset of the clip due to thermal expansion under high-temperature conditions. In ultra-high temperature testing scenarios, the clip expansion amount in traditional solutions can reach over 160μm. However, through multi-dimensional optimizations such as air blowing cooling, material replacement, and dedicated clip matching in this solution, the expansion amount can be significantly reduced.

[0071] Step S702: When the detected flow fluctuation value is not greater than the preset flow fluctuation threshold and the pin expansion amount is not greater than the preset expansion threshold, the control probe array sends the test command to the wafer under test through the target pad to test the chip electrical performance of the wafer under test.

[0072] When the controller detects that the flow fluctuation of the cooling airflow is not greater than the preset flow fluctuation threshold, it indicates that the cooling airflow is in a stable output state and the cooling effect is reliable. At the same time, it detects that the expansion of the pin is not greater than the preset expansion threshold, indicating that the thermal expansion offset of the pin has been effectively suppressed within the allowable range and the alignment accuracy meets the test requirements.

[0073] In one specific embodiment, air cooling can reduce the local temperature rise of the pin card by approximately 12°C, corresponding to an expansion of 160μm to 130μm. Combined with the 4μm expansion retraction compensation set by the dedicated machine-pin card matching scheme, and the pin card holder made of aluminum silicon carbide (AlSiC) composite ceramic material (its own thermal deformation is reduced from 28μm to less than 3μm), the alignment accuracy between the pin card and the wafer pads can be further ensured at high temperatures. When both of the above conditions are met simultaneously, the controller determines that the test conditions are ready and then outputs a test start command to the probe array. The probe array then sends the test command through the target pad to the wafer under test, formally beginning the chip electrical performance test of the wafer under test. This achieves a significant improvement in overall equipment efficiency (OEE) while ensuring test accuracy and stability.

[0074] Optionally, after the control probe array sends test commands to the wafer under test via the target pads, the method further includes the following steps: Step S801: After the test wafer is detected to have completed the chip electrical performance test process, the blowing assembly is controlled to stop blowing cooling airflow onto the carrier surface of the probe array.

[0075] Once the controller detects that the entire electrical performance test process for the wafer under test has been completed and the test data has been fully acquired and stored, it first sends a stop command to the air blowing assembly, controlling the assembly to stop blowing cooling airflow onto the probe array's support surface. During the test, the air blowing assembly continuously blows a constant-temperature cooling airflow onto the probe array's support surface through slit-type stainless steel nozzles. The air source pressure is 0.55 MPa, the gas flow rate is 110 NL / min, and the gas temperature is stably controlled at 25±1℃, which can reduce the local temperature rise of the probe clips by approximately 12℃, effectively suppressing the thermal expansion and deformation of the probe array. Stopping the cooling airflow after the test saves compressed gas consumption and avoids unnecessary thermal stress on the probe clips caused by continuous cooling, thus extending the equipment's service life.

[0076] Step S802: Control the probe array to rise to the preset initial area in the wafer testing equipment so that the probe array no longer contacts the target pad.

[0077] After the cooling airflow stops, the controller drives the probe array to rise vertically to the preset initial standby area in the wafer testing equipment. As the probe array rises, the tips of each probe gradually disengage from the elastic contact with the target pads on the wafer under test, eventually retracting completely to a safe height, thus ending the contact state for this wafer test. After this reset action is completed, the probe array remains in the initial area, ready for the loading and testing of the next wafer. Through the above-described orderly shutdown and reset process, the safe separation of the probe card from the wafer after testing can be ensured, avoiding the additional thermal expansion caused by prolonged contact between the probes and the high-temperature wafer in non-testing states. This helps maintain the dimensional stability and lifespan of the probe card, thereby ensuring the continuous improvement of the overall testing efficiency and comprehensive performance (OEE) of the equipment.

[0078] During high-temperature testing of a certain type of wafer, the initial expansion was 160 μm, and the OEE was 65%. By adopting the wafer testing control method described in the above embodiment, the expansion was eventually reduced to 130 μm under the action of the air blowing component. Furthermore, by optimizing the position of the temperature needle component, the preheating time was reduced from 7 minutes to 1 minute, the OEE was increased to 90%, and the single-machine output was increased from 1.82 wafers / hour to 2.8 wafers / hour.

[0079] As can be seen from the above wafer testing control method, this method uses the temperature needle component in the wafer testing equipment to uniformly heat up multiple preheating areas in the wafer under test, thereby achieving precise control of the preheating process of the wafer under test and effectively reducing the preheating operation time. At the same time, this method uses the air blowing component in the wafer testing equipment to cool down specific areas of the probe array, thereby significantly alleviating the expansion of the probe array and improving the overall testing efficiency of the wafer testing equipment.

[0080] Corresponding to the above embodiments of the wafer testing control method, this invention also provides a wafer testing control system, such as... Figure 2 As shown, this system is used in the controller of a wafer testing equipment; the wafer testing equipment also includes at least: a blowing assembly, a temperature needle assembly, and a probe array; the system includes: Heating control module 100: When the wafer under test is detected to be in the bearing area of ​​the wafer testing equipment, the heating needle assembly is controlled to descend to multiple preheating areas of the wafer under test, and after the heating needle assembly contacts each preheating area, the heating needle assembly is controlled to heat each preheating area according to a preset heating rate. Cooling control module 200: When the temperature value of each preheating area is detected to meet the preset temperature threshold condition, the probe array probe surface is controlled to descend to the elastic contact position of the target pad in the wafer under test, and the air blowing component is controlled to blow cooling airflow to the bearing surface of the probe array according to the corresponding airflow parameters. Test control module 300: When the cooling airflow at the bearing surface is detected to meet the preset flow threshold condition, the probe array is controlled to send the test command to the wafer under test through the target pad.

[0081] As can be seen from the above wafer test control system, the system uses the temperature needle component in the wafer test equipment to uniformly heat up multiple preheating areas in the wafer under test, thereby achieving precise control of the preheating process of the wafer under test and effectively reducing the preheating operation time. At the same time, the system uses the air blowing component in the wafer test equipment to cool down specific areas of the probe array, thereby significantly reducing the expansion of the probe array and improving the overall testing efficiency of the wafer test equipment.

[0082] The wafer test control system provided in this embodiment of the invention has the same implementation principle and technical effect as the aforementioned wafer test control method embodiment. For the sake of brevity, any parts not mentioned in the system embodiment can be referred to the corresponding content in the aforementioned wafer test control method embodiment.

[0083] This embodiment also provides a wafer testing device, such as... Figure 3 As shown, the wafer testing equipment includes at least: an air blowing assembly 10, a temperature needle assembly 20, a probe array 30, and a controller 40; wherein the controller 40 is connected to the air blowing assembly 10, the temperature needle assembly 20, and the probe array 30 respectively.

[0084] Specifically, the structural diagram of the controller 40 is as follows: Figure 4 As shown, it includes a processor 101 and a memory 102; wherein, the memory 102 is used to store one or more computer instructions, which are executed by the processor to implement the steps of the above-described wafer test control method.

[0085] Figure 4 The controller 40 shown also includes a bus 103 and a communication interface 104. The processor 101, the communication interface 104 and the memory 102 are connected via the bus 103.

[0086] The memory 102 may include high-speed random access memory (RAM) and may also include non-volatile memory, such as at least one disk storage device. The bus 103 may be an ISA bus, PCI bus, or EISA bus, etc. The bus can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 4 The symbol is represented by a single double-headed arrow, but this does not mean that there is only one bus or one type of bus.

[0087] The communication interface 104 is used to connect to at least one personnel terminal and other network units through a network interface, and to send encapsulated IPv4 packets or IPv4 packets to the personnel terminal through the network interface.

[0088] Processor 101 may be an integrated circuit chip with signal processing capabilities. In implementation, each step of the above method can be completed by the integrated logic circuitry in the hardware of processor 101 or by instructions in software form. The processor 101 can be a general-purpose processor, including a Central Processing Unit (CPU), a Network Processor (NP), etc.; it can also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field-Programmable Gate Array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this disclosure. The general-purpose processor can be a microprocessor or any conventional processor. The steps of the methods disclosed in the embodiments of this disclosure can be directly manifested as execution by a hardware decoding processor, or execution by a combination of hardware and software modules in the decoding processor. The software module can reside in a mature storage medium in the art, such as random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, or registers. This storage medium is located in memory 102. The processor 101 reads the information in memory 102 and, in conjunction with its hardware, completes the steps of the method described in the foregoing embodiments.

[0089] This invention also provides a storage medium storing a computer program, which, when run by a processor, executes the steps of the wafer testing control method described in the foregoing embodiments.

[0090] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, devices, and methods can be implemented in other ways. The system embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Additionally, the coupling or direct coupling or communication connection shown or discussed may be through some communication interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.

[0091] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0092] In addition, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0093] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a processor-executable, non-volatile, computer-readable storage medium. Based on this understanding, the technical solution of this invention, essentially, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, electronic device, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0094] Finally, it should be noted that the above-described embodiments are merely specific implementations of the present invention, used to illustrate the technical solutions of the present invention, and not to limit it. The scope of protection of the present invention is not limited thereto. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments within the technical scope disclosed in the present invention, or make equivalent substitutions for some of the technical features; and these modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A wafer testing control method, characterized in that, The method is applied in the controller of a wafer testing equipment; the wafer testing equipment further includes at least: an air blowing assembly, a temperature needle assembly, and a probe array; the method includes: When the wafer under test is detected to be in the bearing area of ​​the wafer testing equipment, the temperature needle assembly is controlled to descend to multiple preheating areas of the wafer under test, and after the temperature needle assembly contacts each preheating area, the temperature needle assembly is controlled to heat each preheating area according to a preset heating rate. When the temperature value of each preheating zone is detected to meet the preset temperature threshold condition, the probe array is controlled to descend to the elastic contact position of the target pad in the wafer under test, and the air blowing component is controlled to blow cooling airflow to the bearing surface of the probe array according to the corresponding airflow parameters. When the cooling airflow at the bearing surface is detected to meet the preset flow threshold condition, the probe array is controlled to send the test command to the wafer under test through the target pad.

2. The wafer testing control method according to claim 1, characterized in that, When the wafer under test is detected to be in the bearing area of ​​the wafer testing equipment, the temperature needle assembly is controlled to descend to multiple preheating areas of the wafer under test, including: Obtain the base of the wafer testing equipment and determine the bearing area of ​​the wafer testing equipment based on the wafer stage in the base; The light source and the light sensor contained in the wafer testing equipment are obtained; wherein the light source and the light sensor are respectively disposed on both sides of the bearing area; The light source is controlled to emit light towards the bearing area, and the light sensor is controlled to acquire the light value; If the illumination value is less than the preset illumination threshold, then the wafer under test is determined to be in the bearing area; A coordinate axis perpendicular to each other is constructed with the center of the wafer to be tested as the origin. Multiple preheating areas on the coordinate axis that are equidistant from the origin are obtained, and the temperature needle assembly is controlled to descend to the multiple preheating areas.

3. The wafer testing control method according to claim 2, characterized in that, After the warm needle assembly comes into contact with each preheating zone, the warm needle assembly is controlled to heat each preheating zone according to a preset heating rate, including: When the temperature needle assembly is detected to be in contact with each of the preheating zones, the ceramic heating core and NTC temperature sensor built into the temperature needle assembly are controlled to be in working state. The heating rate and target temperature of the temperature needle assembly are determined by the type parameters of the wafer under test. Based on the target temperature, the ceramic heating core is controlled to heat each preheating zone according to the heating rate, and the NTC temperature sensor is controlled to acquire the temperature value of each preheating zone in real time. When the detected temperature value is the same as the target temperature, the ceramic heating core is controlled to perform constant temperature treatment on each preheating zone based on the target temperature.

4. The wafer testing control method according to claim 3, characterized in that, When the temperature values ​​of each preheating zone are detected to meet the preset temperature threshold conditions, the method further includes: The temperature fluctuation value of each preheating zone is calculated using the temperature value acquired in real time by the NTC temperature sensor. When the temperature fluctuation value is not greater than the preset temperature fluctuation threshold and the duration is greater than the preset temperature duration threshold, the ceramic heating core and the NTC temperature sensor are controlled to be in a sleep state. The temperature needle assembly is controlled to rise to a preset initial area in the wafer testing equipment so that the temperature needle assembly no longer comes into contact with the corresponding preheating areas.

5. The wafer testing control method according to claim 1, characterized in that, Controlling the probe array's probe surface to descend to the elastic contact position of the target pad in the wafer under test includes: The probe surface of the probe array is determined based on the tip region of all probes in the probe array, and the corresponding target pad in the wafer under test is determined according to the functional parameters of each probe. The elastic contact position of the target pad is determined by the type parameters of the wafer under test, and the probe array is driven to approach the target pad. When the probe surface is detected to have descended to the elastic contact position of the target pad, and when all probes in the probe array are detected to have completed alignment contact with the corresponding target pad, the probe array is controlled to stop driving.

6. The wafer testing control method according to claim 5, characterized in that, Controlling the air blowing assembly to blow cooling airflow onto the bearing surface of the probe array according to corresponding airflow parameters includes: When the probe array is detected to be stationary, the slit cooling nozzle built into the air blowing assembly is put into standby mode. The cooling area corresponding to the slit cooling nozzle is determined from the bearing surface of the probe array, and the target cooling rate of the cooling area is determined by the thermal expansion parameters of the probe array. The working pressure and gas flow rate of the slit cooling nozzle are determined based on the target cooling rate, and the airflow parameters of the blowing assembly are determined based on the working pressure and gas flow rate. The airflow parameters are used to control the slit cooling nozzle to blow cooling airflow into the cooling area; wherein the temperature of the cooling airflow is lower than the target temperature of the temperature needle assembly.

7. The wafer testing control method according to claim 1, characterized in that, When the cooling airflow at the bearing surface is detected to meet the preset flow threshold condition, the step of controlling the probe array to send the test command to the wafer under test through the target pad includes: The flow rate fluctuation value of the cooling airflow at the bearing surface is obtained in real time by the flow sensor built into the air blowing assembly, and the needle expansion amount of the probe array is obtained in real time by the displacement sensor built into the probe array. When the detected flow fluctuation value is not greater than the preset flow fluctuation threshold and the pin expansion amount is not greater than the preset expansion threshold, the probe array is controlled to send the test command to the wafer under test through the target pad to test the chip electrical performance of the wafer under test.

8. The wafer testing control method according to claim 1, characterized in that, After controlling the probe array to send test commands to the wafer under test through the target pad, the method further includes: Once the test wafer is detected to have completed the chip electrical performance test process, the air blowing assembly is controlled to stop blowing cooling airflow onto the carrier surface of the probe array. The probe array is controlled to rise to a preset initial area in the wafer testing equipment so that the probe array no longer contacts the target pad.

9. A wafer testing and control system, characterized in that, The system is applied in the controller of a wafer testing equipment; the wafer testing equipment further includes at least: a blowing assembly, a temperature needle assembly, and a probe array; the system includes: Temperature control module: When the wafer under test is detected to be in the bearing area of ​​the wafer testing equipment, the temperature needle assembly is controlled to descend to multiple preheating areas of the wafer under test, and after the temperature needle assembly contacts each preheating area, the temperature needle assembly is controlled to heat each preheating area according to a preset temperature rise rate. Cooling control module: When the temperature value of each preheating area is detected to meet the preset temperature threshold condition, the module controls the probe surface of the probe array to descend to the elastic contact position of the target pad in the wafer under test, and then controls the air blowing component to blow cooling airflow onto the bearing surface of the probe array according to the corresponding airflow parameters. Test control module: When the cooling airflow at the bearing surface is detected to meet the preset flow threshold condition, the probe array is controlled to send the test command to the wafer under test through the target pad.

10. A wafer testing device, characterized in that, The wafer testing equipment includes at least: a blowing assembly, a warm needle assembly, a probe array, and a controller; wherein the controller is connected to the blowing assembly, the warm needle assembly, and the probe array respectively; The controller includes a processor and a memory, the memory storing computer-executable instructions that can be executed by the processor, the processor executing the computer-executable instructions to implement the steps of the wafer test control method according to any one of claims 1 to 8.

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