Laser plasma based extreme ultraviolet light source generation device

Abstract

The application provides a kind of laser plasma-based extreme ultraviolet light source generating device, it is related to optical technology field, comprising: timing controller is based on the preset priority of adjustment instruction corresponding to send adjustment instruction to multi-channel laser focusing array, two-dimensional moving platform and extreme ultraviolet light source generating unit;Two-dimensional moving platform carries hydrocarbon composite tin film target;Multi-channel laser focusing array generates laser bombardment hydrocarbon composite tin film target after focusing lens adjustment;Extreme ultraviolet light source generating unit generates target extreme ultraviolet light source after bombardment.The application adopts hydrocarbon composite tin film target, its base material adopts polyimide to reduce the cost and preparation difficulty of target material, and the adjustment instruction generated by timing controller through artificial intelligence unit is used to adjust two-dimensional moving platform, multi-channel laser focusing array and extreme ultraviolet light source generating unit, so that laser can accurately and efficiently aim at hydrocarbon composite tin film target, reduce system operation cost and energy consumption, and improve conversion efficiency.

Description

Technical Field

[0001] This invention relates to the field of optical technology, and in particular to an extreme ultraviolet light source generating device based on laser plasma. Background Technology

[0002] Strength 10 9 -10 15 Tiles per square centimeter (W / cm) 2 When a laser pulse interacts with matter, it generates a temperature of 10... 4 -10 7 Kelvin (K), density 10 15 -10 22 per cubic centimeter (cm) -3 The laser plasma, in its early evolution, can emit extremely strong short-wavelength radiation in the soft X-ray to Extreme Ultraviolet (EUV) band. This characteristic makes it an ideal short-wavelength light source, widely used in EUV / Beyond Extreme Ultraviolet (BEUV) lithography. A highly efficient and stable EUV light source is crucial for achieving finer linewidths in semiconductor nanolithography, and its importance is increasingly evident with the growing demand from fields such as high-speed communication and artificial intelligence. Current EUV lithography machines use a 13.5nm laser plasma light source with a 2% bandwidth. Mass production requires high, stable, low-pollution, and low-maintenance EUV light power at the intermediate focus (IF) point. The IF point power is determined by factors such as the incident laser power and conversion efficiency (CE).

[0003] For extreme ultraviolet lithography light sources, the core criteria for light source selection are mainly determined by the following points: (1) Power and stability (decisive indicators): Power requirements are ≥250W for 7nm process and ≥500W for 3nm process (mass production requirements). While meeting the power requirements, stability support is also required, that is, for pulse characteristics, the repetition frequency must reach 50 kHz and can be precisely controlled (matching the production line rhythm). (2) Wavelength and spectral purity: The fixed wavelength must be strictly locked at 13.5nm (±0.01nm) to match the Bragg diffraction conditions of molybdenum (Mo) / silicon (Si) multilayer film mirrors. The bandwidth must be controlled within 2% (to ensure lithography resolution). (3) Conversion efficiency and cost: The CE value determines the conversion efficiency from laser to EUV light source. The current CE value of laser-produced plasma (LPP) light source technology is about 5-6%, which is the core optimization target. Secondly, the total cost of ownership, including the laser system, also needs to be considered. (4) Other key indicators: Debris control to reduce plasma debris contamination of optical components (affecting lifespan). Secondly, EUV light cannot penetrate air and requires a fully vacuum environment system, so the consumption and maintenance costs of the target material are also factors to consider.

[0004] Existing extreme ultraviolet light source generation devices based on laser plasmas suffer from problems such as high cost and difficulty in fabricating tin (Sn) droplet targets, difficulty in aligning the laser with the droplets, and limited potential for improving conversion efficiency. Summary of the Invention

[0005] This invention provides an extreme ultraviolet (EUV) light source generation device based on laser plasma, which addresses the shortcomings of existing technologies, such as high cost and difficult fabrication of tin (Sn) droplet targets, difficulty in laser alignment with droplets, and limited potential for improving conversion efficiency. This invention uses a hydrocarbon composite tin thin film target, and the hydrocarbon substrate material is polyimide, which reduces the cost and fabrication difficulty of the target material. The timing controller adjusts the two-dimensional moving platform, the multi-channel laser focusing array, and the EUV light source generation unit through adjustment instructions generated by the artificial intelligence unit, enabling the laser to be easily and accurately aligned with the hydrocarbon composite tin thin film target, reducing system operating costs and energy consumption while improving conversion efficiency.

[0006] The present invention provides an extreme ultraviolet light source generating device based on laser plasma, comprising the following steps.

[0007] A timing controller is used to obtain adjustment instructions from the artificial intelligence unit and send the adjustment instructions to the multi-channel laser focusing array, the two-dimensional moving platform, and the extreme ultraviolet light source generation unit respectively based on the preset priority corresponding to the adjustment instructions; the two-dimensional moving platform is equipped with a hydrocarbon composite tin thin film target; the hydrocarbon substrate material of the hydrocarbon composite tin thin film target is polyimide; The two-dimensional mobile platform is used to move based on the adjustment command; The multi-channel laser focusing array is used to adjust the focusing lens in the multi-channel laser focusing array based on the adjustment command, and generate laser to bombard the hydrocarbon composite tin thin film target after the focusing lens is adjusted. The extreme ultraviolet light source generating unit is used to adjust the reflector in the extreme ultraviolet light source generating unit based on the adjustment command, and to generate the target extreme ultraviolet light source after the bombardment; A high-speed transient capture unit is used to acquire the first image data corresponding to the hydrocarbon composite tin thin film target; and input the first image data into the artificial intelligence unit; The artificial intelligence unit is used to generate an adjustment instruction for the next moment based on the first image data, and send the adjustment instruction for the next moment to the timing controller; the artificial intelligence unit is trained based on the historical image data of the hydrocarbon composite tin thin film target.

[0008] According to the present invention, an extreme ultraviolet light source generating device based on laser plasma is provided, wherein the multi-channel laser focusing array includes at least multiple neodymium-yttrium aluminum garnet lasers.

[0009] According to the present invention, an extreme ultraviolet light source generating device based on laser plasma is provided, wherein each of the neodymium-yttrium aluminum garnet lasers may further include a frequency doubling crystal; the frequency doubling crystal is a frequency doubling crystal or a third frequency doubling crystal.

[0010] According to the present invention, an extreme ultraviolet light source generating device based on laser plasma is provided, wherein each of the neodymium-yttrium aluminum garnet lasers emits lasers at the same frequency in a preset timing sequence to bombard the hydrocarbon composite tin thin film target.

[0011] According to the present invention, an extreme ultraviolet light source generating device based on laser plasma is provided, wherein the multi-channel laser focusing array includes ten neodymium-yttrium aluminum garnet lasers, the ten neodymium-yttrium aluminum garnet lasers forming a distributed array architecture; the optical axis of each neodymium-yttrium aluminum garnet laser is parallel to the central reference axis of the distributed array architecture.

[0012] According to the present invention, an extreme ultraviolet light source generating device based on laser plasma is provided, wherein the high-speed transient capture unit includes a visible transient camera and an extreme ultraviolet spectrometer; the first image data includes a target side ablation image and extreme ultraviolet transient features; The visible transient camera is used to acquire ablation images of the side of the hydrocarbon composite tin thin film target. The extreme ultraviolet spectrometer is used to acquire extreme ultraviolet images of the plasma luminescence region of the hydrocarbon composite tin thin film target, and to determine the extreme ultraviolet transient characteristics based on the extreme ultraviolet images.

[0013] According to the present invention, an extreme ultraviolet light source generating device based on laser plasma is provided, wherein the artificial intelligence unit is specifically used for: Adjustment instructions are generated based on the ablation image of the target side and the extreme ultraviolet transient features.

[0014] According to the present invention, an extreme ultraviolet light source generating device based on laser plasma is provided, wherein the adjustment command includes a first adjustment command and a second adjustment command; the preset priority includes a first priority corresponding to the first adjustment command and a second priority corresponding to the second adjustment command; and the timing controller is specifically used for: Based on the first priority, the first adjustment command is sent to the multi-channel laser focusing array and the extreme ultraviolet light source generating unit; The second adjustment instruction is sent to the two-dimensional mobile platform based on the second priority.

[0015] According to the present invention, an extreme ultraviolet light source generating device based on laser plasma is provided, wherein the two-dimensional moving platform is further configured to send a ready signal to the timing controller after the movement is completed; The timing controller is further configured to send a trigger command to the multi-channel laser focusing array after a first preset time period after receiving the ready signal; The multi-channel laser focusing array is also used to generate the laser to bombard the hydrocarbon composite tin thin film target according to preset parameters based on the trigger command.

[0016] According to the present invention, an extreme ultraviolet light source generating device based on laser plasma is provided, wherein while the laser plasma bombards the hydrocarbon composite tin thin film target, the timing controller is also used to send a light source acquisition command to the extreme ultraviolet light source generating unit. The extreme ultraviolet light source generating unit is also used to adjust the reflector to a preset direction based on the light source acquisition command, and to collect the target extreme ultraviolet light source.

[0017] The present invention provides an extreme ultraviolet (EUV) light source generation device based on laser plasma, comprising: a timing controller for acquiring adjustment instructions from an artificial intelligence unit and sending the adjustment instructions to a multi-channel laser focusing array, a two-dimensional moving platform, and an EUV light source generation unit based on preset priorities corresponding to the adjustment instructions; the two-dimensional moving platform is equipped with a hydrocarbon composite tin thin film target; the hydrocarbon substrate material of the hydrocarbon composite tin thin film target is polyimide; the two-dimensional moving platform is used to move based on the adjustment instructions; the multi-channel laser focusing array is used to adjust the focusing lens in the multi-channel laser focusing array based on the adjustment instructions, and generate laser bombardment of the hydrocarbon composite tin thin film target after the focusing lens adjustment; the EUV light source generation unit is used to adjust the reflector in the EUV light source generation unit based on the adjustment instructions, and generate target EUV light source after bombardment; a high-speed transient capture unit is used to acquire first image data corresponding to the hydrocarbon composite tin thin film target; and input the first image data into the artificial intelligence unit; the artificial intelligence unit is used to generate adjustment instructions for the next moment based on the first image data, and send the adjustment instructions for the next moment to the timing controller; the artificial intelligence unit is trained based on historical image data of the hydrocarbon composite tin thin film target. This invention uses a hydrocarbon composite tin thin film target, and the hydrocarbon substrate material is polyimide, which reduces the cost and difficulty of target material preparation. The timing controller adjusts the two-dimensional moving platform, the multi-channel laser focusing array and the extreme ultraviolet light source generation unit through adjustment instructions generated by the artificial intelligence unit, so that the laser can be accurately and efficiently aligned with the hydrocarbon composite tin thin film target, reducing system operating costs and energy consumption while improving conversion efficiency. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 This is one of the structural schematic diagrams of the extreme ultraviolet light source generation device based on laser plasma provided by the present invention.

[0020] Figure 2 This is a schematic diagram of the laser provided by the present invention.

[0021] Figure 3 This is a schematic diagram of the ablation image of the target material side provided by the present invention.

[0022] Figure 4 This is a schematic diagram of the extreme ultraviolet transient characteristics provided by the present invention.

[0023] Figure 5This is the second schematic diagram of the extreme ultraviolet light source generating device based on laser plasma provided by the present invention.

[0024] Figure 6 This is a control flowchart of the extreme ultraviolet light source generation device based on laser plasma provided by the present invention. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0026] To address the aforementioned problems in the prior art, the present invention provides an extreme ultraviolet light source generation device based on laser plasma. Figure 1 This is one of the structural schematic diagrams of the extreme ultraviolet light source generation device based on laser plasma provided by the present invention, such as... Figure 1 As shown, the extreme ultraviolet light source generating device 100 based on laser plasma includes the following units.

[0027] The timing controller 110 is used to obtain adjustment instructions from the artificial intelligence unit and send the adjustment instructions to the multi-channel laser focusing array, the two-dimensional moving platform and the extreme ultraviolet light source generation unit respectively based on the preset priority corresponding to the adjustment instructions; the two-dimensional moving platform is equipped with a hydrocarbon composite tin thin film target; the hydrocarbon substrate material of the hydrocarbon composite tin thin film target is polyimide; The two-dimensional mobile platform 120 is used to move based on the adjustment command; The multi-channel laser focusing array 130 is used to adjust the focusing lens in the multi-channel laser focusing array based on the adjustment command, and generate laser to bombard the hydrocarbon composite tin thin film target after the focusing lens is adjusted. The extreme ultraviolet light source generating unit 140 is used to adjust the reflector in the extreme ultraviolet light source generating unit based on the adjustment command, and to generate the target extreme ultraviolet light source after the bombardment; The high-speed transient capture unit 150 is used to acquire first image data corresponding to the hydrocarbon composite tin thin film target and input the first image data into the artificial intelligence unit. The artificial intelligence unit 160 is used to generate an adjustment instruction for the next moment based on the first image data, and send the adjustment instruction for the next moment to the timing controller; the artificial intelligence unit is trained based on the historical image data of the hydrocarbon composite tin thin film target.

[0028] Specifically, against the backdrop of information technology's deep evolution towards high-speed, high-capacity data communication, high-performance computing, and artificial intelligence, the demands of advanced semiconductor chips for process linewidth (7 nanometers and below), computing speed, and energy efficiency have broken through the physical limits of traditional deep ultraviolet lithography technology. Extreme ultraviolet (EUV) lithography technology has become the core path to continue Moore's Law. Among these, the EUV light source based on laser plasma (LPP) (center wavelength 13.5 nanometers, bandwidth approximately 2%) is crucial. It generates extreme ultraviolet radiation by bombarding a tin target with a high-power laser, achieving nanometer-level precision exposure. Furthermore, it requires a stable output of high-power EUV light at the central focal point to match the capacity and yield requirements of large-scale wafer mass production, ultimately becoming an indispensable core light source equipment in the large-scale manufacturing of advanced chips. In the practical application of commercial EUV lithography machines, the core objective is to match the mass production demand of more than 200 12-inch wafers per hour in wafer fabs. This not only requires the light source to continuously and stably output ≥250 watts of 13.5 nanometer EUV light at the central focal point (IF), but also necessitates a reliable and stable Sn droplet generation device. The preparation, control, and laser interaction of Sn droplets (diameter 10-50 micrometers (μm)) face four major categories of key difficulties, which directly restrict the power, stability, and lifespan of the light source: (1) Mass-produced EUV light sources require Sn droplets to meet the stringent requirements of "high frequency (>50kHz), small diameter (≤30μm), and large spacing (≥10 times the droplet diameter)"; (2) While Sn droplets are ionized by laser to generate plasma, they release tin ions, neutral particles, and clusters of debris, which become the core source of pollution for EUV light sources; (3) The precise alignment of the laser and Sn droplets directly determines the EUV conversion efficiency, but in practical applications, the requirements for spatial alignment error and time synchronization accuracy are extremely stringent; (4) The high-power operation of EUV light sources requires the Sn droplet system to have extremely high reliability to prevent droplet splashing and nozzle clogging.

[0029] The extreme ultraviolet light source generation device based on laser plasma proposed in this application can not only meet the requirements of the above-mentioned photolithography system, but also solve the limitations of Sn droplet generation device.

[0030] First, the timing controller can obtain the adjustment command corresponding to the current moment from the artificial intelligence unit. It should be noted that this adjustment command was generated by the artificial intelligence unit during the last execution of the method of this invention. Then, the timing controller can send the adjustment command to the multi-channel laser focusing array, the two-dimensional moving platform, and the extreme ultraviolet light source generation unit based on the preset priority of the adjustment command. This controls the two-dimensional moving platform to move and complete the target positioning, controls the multi-channel laser focusing array to generate laser bombardment of the hydrocarbon composite tin thin film target, and controls the extreme ultraviolet light source generation unit to generate the target extreme ultraviolet light source. The timing controller may include multiple high-precision timing controllers.

[0031] To address the problems of splash contamination, insufficient stability, and low energy utilization efficiency of Sn droplet targets in existing technologies, the technical solution of this invention can employ a hydrocarbon (CH) composite tin (Sn) thin film target. Pulsed laser deposition (PLD) technology can be used to deposit a dense and uniform Sn thin film on a CH substrate to obtain a CH-Sn composite thin film target. During the thin film deposition process, the choice of substrate material is crucial to the performance of the final CH-Sn thin film target, taking into account the requirements of the photolithography light source. Choosing a CH substrate has the following advantages: (1) The hydrocarbon gradient structure of the CH composite film forms an "adsorption-anchoring" interface with Sn, and Sn atoms can penetrate to the surface of the substrate by 3-5 nanometers (nm) to form a transition layer, thereby increasing the laser energy absorption efficiency from 85% of the pure Sn target to over 92%. At the same time, the low thermal conductivity of the hydrocarbon matrix can slow down heat diffusion, allowing the tin plasma to maintain a high temperature for a longer period of time. (2) The cross-linking network of CH chains forms a physical constraint on liquid Sn, reducing the amount of Sn splashing during laser bombardment by 40%, and avoiding tin particle contamination of the multilayer film mirror. (3) The CH substrate itself is chemically inert and does not react chemically with Sn. The surface roughness of the film after deposition is high, which will not introduce additional scattering loss. (4) The composition of CH material is simple, and its influence on the 13.5nm 2% bandwidth of Sn is negligible.

[0032] Currently, the three main choices for CH materials are: (1) polyimide (PI); (2) polyethylene (PE); and (3) pyrene coating. PI material is chosen as the substrate material primarily for the following advantages: ① Excellent thermal stability and high-temperature resistance: PI has excellent thermal stability with a decomposition temperature > 500 degrees Celsius (°C), a long-term operating temperature of 230-260°C, and a short-term tolerance temperature of 400-500°C. This allows it to maintain structural stability under extreme conditions of laser bombardment of Sn targets (surface temperature can reach over 500°C) without softening or deforming like other plastic materials, ensuring precise positioning of the Sn film and EUV conversion efficiency. ② Perfect thermal expansion matching and dimensional stability: PI's coefficient of thermal expansion is closest to that of Sn among the three materials, and the interface transition layer can effectively buffer thermal stress differences. This allows the PI / Sn composite film to maintain dimensional stability under high-temperature conditions, perfectly adapting to the precision focusing requirements of two-dimensional mobile platforms. ③ Excellent adhesion and interfacial stability with Sn: The polar imide groups on the PI surface can form strong chemical bonds with Sn, resulting in adhesion far superior to other plastic substrates. This ensures excellent adhesion even under repeated laser bombardment (10⁻⁶ ppm). 5 After multiple exposures (more than once), the Sn film will not peel off or crack, extending the service life of the target material. ④ Mechanical strength and fatigue resistance: The PI film has high tensile strength, which can withstand the high-speed reciprocating motion of the two-dimensional moving platform and laser impact without deformation, ensuring precise position control of each focal point.

[0033] For PE, it softens and deforms at the operating temperature of the Sn target, causing focus shift. Its thermal expansion coefficient mismatch leads to easy peeling of the Sn film after thermal cycling. PE degrades rapidly under laser bombardment, releasing pollutants. Furthermore, PE cannot withstand the mechanical stress of the moving platform, resulting in loss of focusing accuracy. For phenelzine coatings, there is a lack of chemical bonding between phenelzine and Sn, making them prone to detachment under laser impact. Its deposition process has low compatibility, requiring adhesion promoters such as silanes. Therefore, due to insufficient heat resistance and thermal expansion mismatch, PE will rapidly fail in the Sn target working environment, failing to meet the stability requirements of EUV lithography. While phenelzine has good moisture resistance and uniform coating properties, its adhesion to Sn is weak, and its durability in the EUV plasma environment is poor, making it unsuitable as a CH substrate. PI (polyimide), with its core advantages of thermal stability, thermal matching, adhesion, mechanical strength, and EUV compatibility, has become the best choice for depositing Sn films on CH composite film substrates. PI can ensure the long-term stable operation of Sn films in the extreme environment of EUV lithography, improve the laser-to-EUV conversion efficiency, and reduce the maintenance frequency. It is a key material support for realizing high-power EUV light sources (IF point ≥ 250W).

[0034] The innovative hydrocarbon composite tin thin film target developed in this application significantly improves laser energy absorption efficiency through a gradient composite structure design of hydrocarbon substrate material and tin. It increases the laser-to-EUV conversion efficiency from 2.5-3% of traditional solid pure tin targets to 3.8-4.2%. At the same time, the buffering effect of the hydrocarbon matrix is ​​used to suppress tin sputtering, thereby reducing the contamination rate of the light source system and significantly extending the service life of optical components.

[0035] The two-dimensional moving platform houses the hydrocarbon-tin composite thin-film target. The target is fixedly placed on the platform, which supports its overall movement. Combined with a multi-channel laser focusing array, it achieves precise matching at the nanometer level between the thin-film Sn layer, laser focusing, and collection. The platform can employ a dual fixation method of central physical adsorption and edge clamping to stably support targets of a certain size. Alternatively, a linear motor-based platform can achieve a 5-micrometer positioning accuracy within a ±100 mm travel range on the X / Y axes, enabling precise movement of the target and ensuring that the Sn layer on the film deviates from the laser focusing and collection positions by ≤50 μm, meeting the bombardment requirements of the CH-Sn gradient structure. Furthermore, the two-dimensional moving platform collaborates with other units to adapt to mass production schedules. For example, the two-dimensional moving platform communicates in real time with the multi-channel laser focusing array and the extreme ultraviolet (EUV) light source generation unit. Based on the preset bombardment trajectory of the thin film (e.g., matrix or spiral), it synchronously adjusts its moving speed and start / stop sequence to match the pulse frequency of the lasers in the multi-channel laser focusing array and the collection rhythm of the EUV light source generation unit. Furthermore, the two-dimensional moving platform can employ a high-rigidity platform, further enhancing focusing consistency and ensuring minimal deviation between the focal point of each laser beam and the target material's position. Ultimately, this achieves a closed loop for commercial applications: high production capacity, high yield, and low cost, supporting the large-scale manufacturing of chips using advanced processes of 7nm and below. In addition, the collection sub-unit of the EUV light source generation unit includes Mo / Si mirrors (primary collection mirror + secondary mirror). EUV light (13.5nm) cannot penetrate traditional optical glass and requires multi-layer film interference reflection. The mirrors are mostly parabolic or ellipsoidal designs with a surface roughness Ra≤0.1nm, surface shape accuracy≤0.5nm root mean square (RMS), and a 13.5nm band reflectivity≥70%, serving as the core carrier for collecting EUV light.

[0036] Furthermore, the high-speed transient capture unit can acquire the first image data corresponding to the hydrocarbon composite tin thin film target and input the first image data into the artificial intelligence unit. It is easy to understand that the first image data is the image data corresponding to the ablated hydrocarbon composite tin thin film target.

[0037] A general neural network model can be pre-trained based on historical image data of hydrocarbon composite tin thin film targets to obtain an artificial intelligence unit. The historical image data can include thousands of target images under different operating conditions (target ablation scenarios). The artificial intelligence unit can acquire the first image data input by the high-speed transient capture unit. After obtaining the first image data, it can generate adjustment instructions for the next moment based on the first image data and send these instructions to the timing controller. It is easy to understand that the adjustment instructions for the next moment are used by the timing controller to control the multi-channel laser focusing array, the two-dimensional moving platform, and the extreme ultraviolet light source generation unit based on these instructions when the method of this invention is executed again. Through the artificial intelligence unit, key data such as plasma temporal evolution, ablation region contour, and debris diffusion range are automatically extracted, feature-fitted, and quantified to construct a correlation analysis model of "focusing position—ablation effect—debris contamination." The artificial intelligence unit can quickly identify plasma morphology characteristics, energy deposition distribution, and debris generation intensity under different focusing conditions, accurately determine the ablation penetration threshold and debris diffusion critical conditions, and complete intelligent calibration and parameter iteration optimization of the optimal focusing position based on the first image data. This provides data support and decision-making basis for closed-loop control of bombardment focusing accuracy, achieving intelligent optimal matching between ablation efficiency and debris contamination control. Its main advantages are as follows: ① Dynamic interference adaptation: To cope with dynamic interference such as uneven ablation of the tin composite layer on the hydrocarbon composite tin film target surface and minute deformation caused by laser bombardment, traditional fixed threshold algorithms are prone to failure. The artificial intelligence unit can adjust the identification strategy in real time; ② Multi-unit collaborative prediction: Predicts the collaborative deviation of "laser pulse timing + laser ablation trajectory + platform movement delay" in advance, avoiding the lag of traditional "feedback control"; ③ Personalized rhythm optimization: Dynamically adjusts the platform movement speed and start / stop rhythm according to the exposure requirements of different chip processes (such as tin layer thickness and laser power in different areas), improving target utilization and EUV output stability.

[0038] In one embodiment, the multi-channel laser focusing array includes at least a plurality of neodymium-yttrium aluminum garnet lasers.

[0039] Specifically, existing technologies all employ carbon dioxide lasers. While carbon dioxide lasers support advanced processes due to their high power and stability, five major drawbacks—energy inefficiency, wavelength limitation, thermal management challenges, beam instability, and debris contamination—severely restrict the further development of EUV technology. For carbon dioxide lasers, the maximum output of a single unit is approximately 1 kilowatt (kW). Therefore, existing technologies rely on stacking multiple modules to achieve a total output of 25-30 kW. This involves using a seed source for beam splitting, parallel amplification of multiple 1 kW modules, and synchronous spatial beam combining technology to precisely focus multiple 1 kW laser beams onto the same tin droplet, achieving linear power superposition and ultimately reaching a total output of 25-30 kW. There are significant technical challenges in multi-module stacking amplification based on carbon dioxide lasers: First, there is the challenge of sub-picosecond timing synchronization, which requires 25-30 1kW laser beams to act on the tin droplet simultaneously, demanding extremely stringent trigger synchronization accuracy. Second, there is the challenge of nanometer-level spatial beam combining and alignment, which requires focusing all 25-30 beams onto a 30μm tin droplet, resulting in extremely high optical system complexity and difficulty in controlling alignment deviations. Third, there is the challenge of consistency of pulse parameters across multiple modules, which requires ensuring that the output parameters such as pulse width and beam quality of multiple carbon dioxide lasers are completely uniform, and is extremely difficult to achieve due to fluctuations in gas ratio, pressure, and temperature.

[0040] The technical solution employing multiple neodymium-yttrium aluminum garnet (Nd:YAG) lasers (each ≤0.5kW) operating in parallel completely avoids and solves the three major technical challenges mentioned above from the perspectives of working mode, physical architecture, and intelligent control. Regarding the sub-picosecond timing synchronization problem, this solution adopts a distributed array architecture, using a simultaneous emission mode to achieve single-laser emission per burst, with ten lasers working in a sequential cycle. This fundamentally eliminates the rigid synchronization requirement of simultaneous multi-beam bombardment. Combined with a high-precision delay generator with a time jitter of <10 picoseconds (ps), the pulse arrival time difference can be controlled to <1.2 nanoseconds (ns), significantly reducing the difficulty of synchronization control. Regarding the nanometer-level spatial beam combining and alignment problem, this application can employ a single-beam sequential precise bombardment mode, eliminating the need for complex multi-beam systems. Spatial beam combining, using only laser interferometer to calibrate optical axis parallelism and optical path difference (≤200nm), combined with adaptive optics real-time aberration correction, can control the deviation between the focal point and the center of the tin layer of the hydrocarbon composite tin thin film target to ≤0.3μm. A two-dimensional moving platform with 5μm-level positioning accuracy is used to support and fix the thin film target, completely eliminating alignment interference caused by droplet drift. Addressing the challenge of consistent pulse parameters across multiple modules, the Nd:YAG all-solid-state laser uses a crystal gain medium, eliminating the operational fluctuations of gas lasers. Multiple identical devices exhibit excellent intrinsic consistency in output parameters. Furthermore, relying on a high-speed transient capture unit and an artificial intelligence unit to form a closed-loop calibration, the laser output parameters are corrected in real time, ensuring a high degree of uniformity in operating parameters across multiple units without the need for a complex gas-coordinated control system.

[0041] Furthermore, the 10.6-micron wavelength of a carbon dioxide laser is preferentially absorbed by the surrounding low-density region in tin plasma, forming a "plasma shield" that prevents energy transfer to the interior, causing the conversion efficiency to decrease with increasing power. Moreover, carbon dioxide lasers produce three times more tin debris than neodymium-yttrium aluminum garnet (Nd:YAG) lasers. This debris deposits on the EUV optical system (costing $1 billion), reducing reflectivity by 0.5% per hour and significantly shortening equipment lifespan. Carbon dioxide lasers require a massive gas circulation system (accounting for 40% of the equipment volume) and extremely precise optical resonators, while Nd:YAG lasers are solid-state lasers with a more compact structure, reducing volume by 60% and halving installation and commissioning time. The total power consumption using a carbon dioxide laser reaches 1.17 kW, while using a Nd:YAG laser can reduce it to half or even less, resulting in a significant reduction in energy consumption. Furthermore, carbon dioxide technology has reached its limit, while Nd:YAG has been continuously optimized through technologies such as frequency doubling (532nm) and triple doubling (355nm). In the future, it can be combined with novel tin targets (such as tin nanodroplets) to increase the conversion efficiency to over 5%.

[0042] In one embodiment, each of the neodymium-yttrium aluminum garnet lasers may further include a frequency doubling crystal; the frequency doubling crystal is a frequency doubler or a frequency tripler.

[0043] Specifically, neodymium-yttrium aluminum garnet lasers can also be fitted with frequency doubling crystals, which can be frequency doubled (532 nm) or tripled (355 nm).

[0044] Alternatively, the neodymium-yttrium aluminum garnet laser can also be set to a higher frequency (e.g., 1 kHz, 600 mJ).

[0045] In the above embodiments, continuous optimization through techniques such as frequency doubling, frequency tripling, and pre-master pulse further improves the photoelectric conversion efficiency of the system, achieving a dual breakthrough in both CE (cell-emitter) and system compactness while maintaining a total power of 30-50 kW. In the future, it can be combined with a novel tin target to increase the conversion efficiency to over 5%. Simultaneously, the frequency of the solid-state laser can be increased to meet the requirements of mass production of lithography light sources.

[0046] In one embodiment, each of the neodymium-yttrium aluminum garnet lasers emits lasers at the same frequency in a preset timing sequence to bombard the hydrocarbon composite tin thin film target.

[0047] Specifically, each Nd:YAG laser bombards a hydrocarbon composite tin thin film target with alternating laser emission at the same frequency, based on a preset timing sequence (pre-pulse triggering first, followed by main pulse triggering after a 10ns interval). Simultaneously, the focusing sub-unit in the multi-channel laser focusing array corrects aberrations in real time through adaptive optics, ensuring that the deviation between the focal point and the center of the tin layer on the hydrocarbon composite tin thin film target is ≤0.03nm. A single laser emission can utilize only a single Nd:YAG laser.

[0048] In one embodiment, the multi-channel laser focusing array includes ten neodymium-yttrium aluminum garnet lasers, which form a distributed array architecture; the optical axis of each neodymium-yttrium aluminum garnet laser is parallel to the central reference axis of the distributed array architecture.

[0049] Specifically, the multi-channel laser focusing array can include ten neodymium-yttrium aluminum garnet (Nd:YAG) lasers. These ten Nd:YAG lasers form a distributed array architecture. A precision adjusting mount is used to align the optical axis of each laser with the central reference axis of the distributed array architecture, ensuring consistent optical axis pointing. An interferometer is used to measure the optical path from each laser to the focal point. By adjusting movable mirrors in the optical path, the optical path difference between the ten lasers is kept ≤0.3μm, preventing focal point shift due to inconsistent optical path lengths. A high-precision trigger (time jitter <10 picoseconds (ps)) triggers the Nd:YAG lasers, controlling the time difference of the laser pulses reaching the focal point to <1.2 nanoseconds (ns), achieving "intermittent bombardment" of the hydrocarbon composite tin thin film target at the same frequency. By controlling the time difference of the laser pulse reaching the focal point to <1.2 nanoseconds (ns), "intermittent bombardment" of hydrocarbon composite tin thin film target is achieved. After a single neodymium-yttrium aluminum garnet laser finishes its work, the two-dimensional platform drives the hydrocarbon composite tin thin film target to move, ensuring the update of the ablation position each time. Figure 2 This is a schematic diagram of the laser provided by the present invention, as shown below. Figure 2 As shown, after laser 1 / 10 has finished working, laser 2 / 10 continues to work, with a time interval of 1*10 for each laser's operation. -3 s, and so on, until all ten lasers have been used, forming a group, and then continuing to use them in groups, with each group spaced 1*10 apart. -2 The heat load of multiple Nd:YAG lasers is dispersed, significantly improving system availability, and each laser is cooled more efficiently with improved output stability.

[0050] In one embodiment, the high-speed transient capture unit includes a visible transient camera and an extreme ultraviolet spectrometer; the first image data includes a side ablation image of the target material and extreme ultraviolet transient features; The visible transient camera is used to acquire ablation images of the side of the hydrocarbon composite tin thin film target. The extreme ultraviolet spectrometer is used to acquire extreme ultraviolet images of the plasma luminescence region of the hydrocarbon composite tin thin film target, and to determine the extreme ultraviolet transient characteristics based on the extreme ultraviolet images.

[0051] Specifically, the high-speed transient capture unit includes a visible transient camera and an extreme ultraviolet spectrometer, and the first image data includes ablation images of the target side and extreme ultraviolet transient features.

[0052] The visible transient camera can acquire ablation images of the side of the hydrocarbon composite tin thin film target. The extreme ultraviolet (EUV) spectrometer can acquire EUV images of the plasma-emitting region of the hydrocarbon composite tin thin film target and determine EUV transient characteristics based on the EUV images. During the acquisition process, the timing controller monitors the data transmission status in real time to ensure that the acquisition timestamps of the visible transient camera and the EUV spectrometer are aligned (deviation <20 picoseconds), providing synchronous data for the decision-making of the artificial intelligence unit.

[0053] The transient camera captures ablation images of the target side with a resolution of up to 1024×1024 pixels, which can include: "target ablation penetration and plasma debris expansion areas." An extreme ultraviolet (EUV) spectrometer captures the plasma's EUV emission region and converts the EUV image into quantified EUV transient features: "peak emission intensity and morphological symmetry." Furthermore, the EUV transient features and the target side ablation image can be stitched together, weighted, and input into the artificial intelligence unit.

[0054] For example, Figure 3 This is a schematic diagram of the ablation image of the target material side provided by the present invention, as shown below. Figure 3 As shown, the visible light transient evolution of plasma after CH film ablation is illustrated at different focusing positions (time dimension: 10 nanoseconds (ns) → 70 ns). The core message reflects the impact of focusing accuracy on the ablation range and plasma debris generation. The analysis, combined with the transient images, is as follows: (1) The time dimension is used to characterize the evolution of plasma. The interval from 10ns to 70ns on the vertical axis corresponds to the complete evolution stage of plasma from generation to expansion. 10~30ns: the initial ablation plasma formation stage, the plasma plume is compact (corresponding to the initial plasma morphology). 50~70ns: the plasma expansion evolution stage, the plasma plume gradually disperses (corresponding to the diffusion range of debris). (2) Ablation and debris performance at each focusing position. Taking the gray area as the initial position of the film (the target bombardment area of ​​the CH film Sn layer), the differences between the three positions are clear: ① Focusing position 1 (optimal): ablation is close to penetration, and debris is minimal. Among them, 10~30ns: The plasma ablation region is concentrated in the thin film region, with a compact shape (acting only on the Sn layer of the CH thin film, without penetrating the substrate). The focused energy is deposited on the thin film, which is more conducive to ablation and the reduction of debris; 50~70ns: Although the plasma diffuses, there is no independent plasma signal behind the thin film region (right side), indicating that the ablation is close to penetration but has not completely broken through the substrate. Only a small amount of debris is generated near the target layer, which is the most ideal bombardment effect. ② Focusing position 2 (second best): Ablation is limited, and there is slightly more debris. Among them, 10~30ns: The plasma ablation point is on the front side of the thin film region, and the expansion rate is slightly faster, but it is still concentrated in a single area; 50~70ns: The diffusion range is smaller than that of position 1, most of the energy is concentrated on the front side of the thin film, the ablation depth is less, and there is no obvious independent plasma behind the line, indicating that the ablation is only in the target surface region. The amount of debris is more than that of position 1, but much less than that of position 3. ③ Focusing position 3 (worst: ablation penetration): Debris is generated in both directions, with the largest amount. The appearance of double bright spots on both sides of the line starting at 10 ns indicates that the initial ablation has penetrated the CH film, generating plasma on both the front and back surfaces. From 30 to 70 ns, the double bright spots persist and their diffusion range increases significantly. The plasma signals on both sides of the line are strong, indicating that the ablation has completely penetrated the substrate, generating a large amount of plasma debris in both the front and back regions, representing the most severe debris contamination among the three scenarios. The precision of the focusing position directly determines the ablation range of the CH film: precise focusing (position 1) can confine the ablation to the target Sn layer, depositing energy as much as possible while avoiding substrate penetration, thereby minimizing plasma debris; focus deviation (position 3) will cause ablation to penetrate the CH film, generating debris in both directions, significantly increasing the risk of contamination of the optical system. This also verifies the necessity of "timing control system + AI focus recognition"—only by maintaining precise focusing can the efficient and low-contamination operation of the CH film target be guaranteed.

[0055] Figure 4 This is a schematic diagram of the extreme ultraviolet transient characteristics provided by the present invention, see reference. Figure 4The horizontal axis represents wavelength, and the vertical axis represents relative intensity, with au representing any unit. In the laser-plasma (LPP) source of extreme ultraviolet lithography (EUVL), spectral purity (SP) is the core "screening factor" that determines the effective utilization rate of conversion efficiency (CE). CE describes the ability to convert laser energy into radiation energy across the entire wavelength range, while SP focuses on the energy proportion of the 13.5nm target wavelength band (the only working wavelength band of EUV lithography). The two are not inclusive; rather, SP directly determines the proportion of "effective energy" in CE, ultimately affecting the actual usable power of the EUV source. Figure 4 The figure shows the EUV radiation spectrum of CH composite thin film targets with different substrates (PI, polyethylene, and pyrelin) and Sn-coated (focusing on the 2% bandwidth region around 13.5 nm, corresponding to the gray area). Combined with the SP (the proportion of target band energy to the total band) value, it can be directly seen that PI is the optimal choice. Figure 4 The spectral purity (SP) of PI-Sn (11.46%) is significantly higher than that of polyethylene-Sn (10.35%) and phenelzine-Sn (9.31%). The target wavelength energy is more concentrated: in the gray target wavelength region of 13.5 nm in the figure, the radiation intensity peak of PI-Sn is more prominent, meaning that the radiation energy of its tin plasma is more focused in the EUV working band. The essence of this result is the advantage of PI as a substrate (good thermal stability and strong bonding with Sn), which allows the tin plasma to be stably maintained under optimal EUV radiation conditions, thereby increasing the energy proportion of the target wavelength—the higher the SP, the higher the "effective conversion efficiency" (total CE × SP) of EUV lithography. Therefore, PI is the most suitable substrate among the three.

[0056] In one embodiment, the artificial intelligence unit is specifically used for: Adjustment instructions are generated based on the ablation image of the target side and the extreme ultraviolet transient features.

[0057] Specifically, the artificial intelligence unit can generate adjustment instructions within 10 microseconds based on the ablation image of the target side and the extreme ultraviolet transient characteristics. For example, the adjustment instructions could be "focus point offset 0.02nm → laser focusing system fine-tuning".

[0058] In the above embodiments, adjustment instructions are generated based on the ablation image of the target side and the extreme ultraviolet transient characteristics, so that the artificial intelligence unit can optimize the movement rhythm of the two-dimensional moving platform while taking into account both "position accuracy" and "EUV output effect", thus ensuring CE conversion efficiency and improving target utilization.

[0059] In one embodiment, the adjustment instruction includes a first adjustment instruction and a second adjustment instruction; the preset priority includes a first priority corresponding to the first adjustment instruction and a second priority corresponding to the second adjustment instruction; the timing controller is specifically used for: Based on the first priority, the first adjustment command is sent to the multi-channel laser focusing array and the extreme ultraviolet light source generating unit; The second adjustment instruction is sent to the two-dimensional mobile platform based on the second priority.

[0060] Specifically, the adjustment instructions include a first adjustment instruction and a second adjustment instruction. The preset priorities include a first priority corresponding to the first adjustment instruction and a second priority corresponding to the second adjustment instruction. It should be noted that the first priority is higher than the second priority. The timing controller can send the first adjustment instruction to the multi-channel laser focusing array and the extreme ultraviolet light source generating unit based on the first priority. The first priority can have a response time of less than 10 microseconds. The first adjustment instruction is used to instruct the multi-channel laser focusing array to adjust its focusing lens, and it is also used to instruct the extreme ultraviolet light source generating unit to adjust its reflector. The timing controller also sends the second adjustment instruction to the two-dimensional moving platform based on the second priority, which can have a response time of less than 50 microseconds. The second adjustment instruction is used to instruct the two-dimensional moving platform to control its own movement for position compensation, such as fine-tuning by 0.01 nanometers.

[0061] In the above embodiments, the adjustment priority of each unit is clarified by controlling the multi-channel laser focusing array, the extreme ultraviolet light source generating unit, and the two-dimensional moving platform based on different priority controls.

[0062] In one embodiment, the two-dimensional mobile platform is further configured to send a ready signal to the timing controller after the movement is completed; The timing controller is further configured to send a trigger command to the multi-channel laser focusing array after a first preset time period after receiving the ready signal; The multi-channel laser focusing array is also used to generate the laser to bombard the hydrocarbon composite tin thin film target according to preset parameters based on the trigger command.

[0063] Specifically, the timing controller controls the two-dimensional moving platform to complete the target positioning, based on adjustment commands at a speed of 5×10 5The laser beam is moved to the designated area with a precision of μm / s. After the movement is completed, a "ready signal" (response delay ≤ 0.5 microseconds) is fed back to the timing controller as the starting reference for the entire timing sequence. The multi-channel laser focusing array completes optical axis calibration and enters standby mode according to preset parameters (e.g., 100 Hz frequency + 400 mJ single pulse energy), waiting for the trigger command. Upon receiving the ready signal, the timing controller sends a trigger command to the multi-channel laser focusing array (to compensate for the laser optical path delay) after a first preset time period, which can be 50 milliseconds. After receiving the trigger command, laser 1 generates laser energy according to preset parameters to bombard the hydrocarbon composite tin thin film target. At the same time, the timing controller synchronously controls the visible transient camera to capture visible transient images within 5 ns of plasma generation. The extreme ultraviolet spectrometer is triggered 20 ns earlier, with a gate width of 100 ns, and captures images of the extreme ultraviolet emission region within 100 ns, encompassing the entire extreme ultraviolet emission time region of the plasma. The artificial intelligence unit adjusts the recognition strategy in real time 25 ms after laser emission to achieve dynamic environmental adaptation. Among them, the two-dimensional moving platform, multi-channel laser focusing array, high-speed transient capture unit and extreme ultraviolet light source generation unit can all be adjusted based on the adjustment command of the next moment. After the adjustment is completed, the timing controller can start the next process cycle. One process cycle is 10ms. The above process is repeated to adapt to the mass production rhythm of the lithography system. Figure 5 This is the second schematic diagram of the extreme ultraviolet light source generating device based on laser plasma provided by the present invention. The structure of the two-dimensional moving platform, the multi-channel laser focusing array, and the extreme ultraviolet light source generating unit after adjustment to generate the extreme ultraviolet light source is as follows. Figure 5 As shown. Figure 6 This is a control flowchart of the extreme ultraviolet light source generation device based on laser plasma provided by the present invention, as shown below. Figure 6 As shown, through timing control, position control and parameter optimization, the multi-channel laser array is driven to work, and the EUV collection effect is ultimately improved, realizing a closed loop of coordination, feedback and optimization.

[0064] The timing controller of the entire system is based on a unified time base, phased precise triggering, and a real-time feedback closed loop to ensure high-power and high-stability output of the EUV lithography source. The timing controller sends synchronous trigger commands to each system to meet the response requirements of different systems. The process is measured in units of a single process cycle: "CH target bombardment → EUV radiation collection". Optionally, the timing controller can also monitor the response status of each unit in real time. If a unit fails to respond on time (e.g., laser trigger timeout, camera acquisition failure), an "emergency pause" is immediately triggered, simultaneously cutting off the laser output and stopping platform movement to avoid damage to the target or optical system. Every 1000 process cycles, the timing controller initiates a "timing calibration," correcting the delay compensation values ​​of each unit using the output data from the EUV power meter (e.g., automatically updating compensation parameters if the laser path delay increases by 2ns due to temperature changes).

[0065] In the above embodiments, the timing controller automatically optimizes the trigger delay (such as adjusting the synchronization time between the laser and the platform movement), further reducing EUV output fluctuation from ≤0.1% to ≤0.05%.

[0066] In one embodiment, while the laser plasma bombards the hydrocarbon composite tin thin film target, the timing controller is also used to send a light source acquisition command to the extreme ultraviolet light source generating unit. The extreme ultraviolet light source generating unit is also used to adjust the reflector to a preset direction based on the light source acquisition command, and to collect the target extreme ultraviolet light source.

[0067] Specifically, while the laser plasma bombards the hydrocarbon composite tin thin film target, the timing controller can send a light source acquisition command to the extreme ultraviolet (EUV) light source generation unit. Upon receiving the light source acquisition command, the EUV light source generation unit adjusts the reflector to a preset direction and collects the target EUV light source.

[0068] Furthermore, the extreme ultraviolet (EUV) light source generation unit can adjust its own reflector based on adjustment commands, and after bombardment, collect the EUV radiation generated to produce the target EUV light source. The collection subunit of the EUV light source generation unit includes a Mo / Si multilayer film reflector. EUV light (13.5nm) cannot penetrate traditional optical glass and requires multilayer film interference reflection. The mirror has an ellipsoidal design with a surface roughness Ra≤0.1nm, surface shape accuracy≤0.5nm root mean square (RMS), and a reflectivity ≥70% in the 13.5nm band, serving as the core carrier for collecting EUV light.

[0069] In the above embodiments, the light source acquisition command sent by the timing controller ensures that the extreme ultraviolet light source generation unit can reliably generate the target extreme ultraviolet light source.

[0070] The present invention provides an extreme ultraviolet (EUV) light source generation device based on laser plasma, comprising: a timing controller for acquiring adjustment instructions from an artificial intelligence unit and sending the adjustment instructions to a multi-channel laser focusing array, a two-dimensional moving platform, and an EUV light source generation unit based on preset priorities corresponding to the adjustment instructions; the two-dimensional moving platform is equipped with a hydrocarbon composite tin thin film target; the hydrocarbon substrate material of the hydrocarbon composite tin thin film target is polyimide; the two-dimensional moving platform is used to move based on the adjustment instructions; the multi-channel laser focusing array is used to adjust the focusing lens in the multi-channel laser focusing array based on the adjustment instructions, and generate laser bombardment of the hydrocarbon composite tin thin film target after the focusing lens adjustment; the EUV light source generation unit is used to adjust the reflector in the EUV light source generation unit based on the adjustment instructions, and generate target EUV light source after bombardment; a high-speed transient capture unit is used to acquire first image data corresponding to the hydrocarbon composite tin thin film target; and input the first image data into the artificial intelligence unit; the artificial intelligence unit is used to generate adjustment instructions for the next moment based on the first image data, and send the adjustment instructions for the next moment to the timing controller; the artificial intelligence unit is trained based on historical image data of the hydrocarbon composite tin thin film target. This invention uses a hydrocarbon composite tin thin film target, and the hydrocarbon substrate material is polyimide, which reduces the cost and difficulty of target material preparation. The timing controller adjusts the two-dimensional moving platform, the multi-channel laser focusing array and the extreme ultraviolet light source generation unit through adjustment instructions generated by the artificial intelligence unit, so that the laser can be accurately and efficiently aligned with the hydrocarbon composite tin thin film target, reducing system operating costs and energy consumption while improving conversion efficiency.

[0071] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0072] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A laser plasma based extreme ultraviolet light source generating apparatus, characterized by, include: A timing controller is used to obtain adjustment instructions from the artificial intelligence unit and send the adjustment instructions to the multi-channel laser focusing array, the two-dimensional moving platform, and the extreme ultraviolet light source generation unit respectively based on the preset priority corresponding to the adjustment instructions; the two-dimensional moving platform is equipped with a hydrocarbon composite tin thin film target; the hydrocarbon substrate material of the hydrocarbon composite tin thin film target is polyimide; The two-dimensional mobile platform is used to move based on the adjustment command; The multi-channel laser focusing array is used to adjust the focusing lens in the multi-channel laser focusing array based on the adjustment command, and generate laser to bombard the hydrocarbon composite tin thin film target after the focusing lens is adjusted. The extreme ultraviolet light source generating unit is used to adjust the reflector in the extreme ultraviolet light source generating unit based on the adjustment command, and to generate the target extreme ultraviolet light source after the bombardment; A high-speed transient capture unit is used to acquire the first image data corresponding to the hydrocarbon composite tin thin film target; and input the first image data into the artificial intelligence unit; The artificial intelligence unit is used to generate an adjustment instruction for the next moment based on the first image data, and send the adjustment instruction for the next moment to the timing controller; the artificial intelligence unit is trained based on the historical image data of the hydrocarbon composite tin thin film target.

2. The laser-plasma based extreme ultraviolet light source generating device of claim 1, wherein The multi-channel laser focusing array includes at least multiple neodymium-yttrium aluminum garnet lasers.

3. The laser-plasma based extreme ultraviolet light source generating device of claim 2, wherein Each of the neodymium-yttrium aluminum garnet lasers may further include a frequency doubling crystal; the frequency doubling crystal is a frequency doubler or a frequency tripler.

4. The laser-plasma based extreme ultraviolet light source generating device according to claim 2 or 3, characterized in that Each of the neodymium-yttrium aluminum garnet lasers emits lasers at the same frequency in a preset timing sequence to bombard the hydrocarbon composite tin thin film target.

5. The laser-plasma based extreme ultraviolet light source generating device of claim 4, wherein The multi-channel laser focusing array includes ten neodymium-yttrium aluminum garnet lasers, which form a distributed array architecture; the optical axis of each neodymium-yttrium aluminum garnet laser is parallel to the central reference axis of the distributed array architecture.

6. The laser-plasma based extreme ultraviolet light source generating device of claim 1, wherein The high-speed transient capture unit includes a visible transient camera and an extreme ultraviolet spectrometer; the first image data includes a side ablation image of the target material and extreme ultraviolet transient features; The visible transient camera is used to acquire ablation images of the side of the hydrocarbon composite tin thin film target. The extreme ultraviolet spectrometer is used to acquire extreme ultraviolet images of the plasma luminescence region of the hydrocarbon composite tin thin film target, and to determine the extreme ultraviolet transient characteristics based on the extreme ultraviolet images.

7. The extreme ultraviolet light source generating device based on laser plasma according to claim 6, characterized in that, The artificial intelligence unit is specifically used for: Adjustment instructions are generated based on the ablation image of the target side and the extreme ultraviolet transient features.

8. The extreme ultraviolet light source generating device based on laser plasma according to claim 1, characterized in that, The adjustment instructions include a first adjustment instruction and a second adjustment instruction; the preset priority includes a first priority corresponding to the first adjustment instruction and a second priority corresponding to the second adjustment instruction; the timing controller is specifically used for: Based on the first priority, the first adjustment command is sent to the multi-channel laser focusing array and the extreme ultraviolet light source generating unit; The second adjustment instruction is sent to the two-dimensional mobile platform based on the second priority.

9. The extreme ultraviolet light source generating device based on laser plasma according to claim 1, characterized in that, The two-dimensional mobile platform is also used to send a ready signal to the timing controller after the movement is completed; The timing controller is further configured to send a trigger command to the multi-channel laser focusing array after a first preset time period after receiving the ready signal; The multi-channel laser focusing array is also used to generate the laser to bombard the hydrocarbon composite tin thin film target according to preset parameters based on the trigger command.

10. The extreme ultraviolet light source generating device based on laser plasma according to claim 1, characterized in that, While the laser plasma bombards the hydrocarbon composite tin thin film target, the timing controller is also used to send a light source acquisition command to the extreme ultraviolet light source generating unit. The extreme ultraviolet light source generating unit is also used to adjust the reflector to a preset direction based on the light source acquisition command, and to collect the target extreme ultraviolet light source.

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