A communication receiver based on a silicon waveguide integrated terahertz detector detection module and a preparation method thereof

Abstract

The application discloses a kind of communication receivers based on silicon waveguide integrated terahertz detector detection module and preparation method, and the core of receiver is silicon ridge waveguide structure integrated terahertz detector detection module, taper coupling structure is prepared in module by deep silicon etching and silicon ridge waveguide structure, and mixed integrated Schottky diode is used as detection unit, and it is integrally packaged in terahertz metal cavity;Taper coupling structure realizes low-loss mode matching of standard waveguide and silicon waveguide, silicon ridge waveguide structure realizes 330-500GHz frequency band terahertz signal single-mode transmission, and Schottky diode completes terahertz signal direct detection.Module rear-end connects intermediate frequency amplifier, signal conversion unit and display unit, forms complete receiving link, and can realize 1.5Gbps code rate high-definition video real-time transmission.The application has high integration, low coupling loss, simple process and is easy to package, and provides core device scheme for miniaturization and low cost of terahertz communication system.

Description

Technical Field

[0001] This invention relates to terahertz communication technology, specifically to a communication receiver and its fabrication method based on a silicon waveguide integrated terahertz detector detection module. Background Technology

[0002] The terahertz band (0.1~10 THz) boasts advantages such as abundant spectrum resources, high transmission rates, and strong anti-interference capabilities, making it a core candidate band for next-generation ultra-high-speed wireless communication and favored by 6G communication and higher-generation communication technologies. Terahertz detectors are the core components of terahertz communication receivers, and their performance directly determines the receiver's sensitivity, operating bandwidth, and system integration.

[0003] Currently, existing terahertz receiver front-ends mainly fall into two technical routes: one is the solid-state electronics route, which uses III-V compound semiconductors to fabricate discrete detectors and amplifier circuits, relying on complex impedance matching networks, resulting in high transmission loss, large system size, and high cost; the other is the waveguide route, which utilizes the low-loss characteristics of high-resistivity silicon in the terahertz band to achieve signal transmission, and has the potential for high integration and low cost.

[0004] Existing waveguide terahertz devices mostly employ photonic crystal structures, requiring the etching of numerous high-precision micro-hole arrays on silicon wafers. This process is extremely difficult, resulting in low yields. Furthermore, the waveguide and detector are discrete structures, typically using end-face coupling, which leads to alignment difficulties, high coupling losses, and complex packaging, hindering engineering applications. Simultaneously, existing direct-detection terahertz receiver front-ends generally suffer from the separation of waveguide transmission and detection units, resulting in low integration and poor system reliability.

[0005] In summary, existing solutions cannot simultaneously achieve wide operating bandwidth, high integration, low cost, and mass production capability, which has become the core bottleneck for the implementation of terahertz communication systems. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of the prior art and solve the technical problems of high manufacturing difficulty, low integration, high coupling loss and difficult packaging of existing terahertz detectors. It provides a communication receiver based on a silicon waveguide integrated terahertz detector detection module and its fabrication method. Through integrated design, it achieves low-loss transmission, high-efficiency coupling and high-sensitivity detection of terahertz signals.

[0007] To achieve the above objectives, the present invention adopts the following technical solution: a silicon waveguide integrated terahertz detector detection module, which is an integrated structure including a high-resistivity silicon substrate, a silicon ridge waveguide structure, a tapered coupling structure, and a Schottky diode detection unit;

[0008] The silicon ridge waveguide structure and the tapered coupling structure are fabricated on a high-resistivity silicon substrate using a deep silicon etching process to form a terahertz signal transmission path.

[0009] The tapered coupling structure is disposed at the signal input end of the silicon ridge waveguide structure to connect to the external rectangular metal waveguide, realize mode matching, and couple the terahertz signal into the silicon ridge waveguide structure with low loss.

[0010] The Schottky diode detector unit is fixed to the upper surface of the output end of the silicon ridge waveguide structure through a hybrid integration process. The terahertz signal is directly detected as a baseband electrical signal output through the evanescent field coupling formed by the transmission field in the silicon ridge waveguide structure.

[0011] Furthermore, the total thickness of the high-resistivity silicon substrate is 200 μm, of which the thickness of the bottom substrate layer is 50 μm, and the ridge height of the silicon ridge waveguide structure is 150 μm and the ridge width is 150 μm.

[0012] Furthermore, the length of the tapered coupling structure is 2mm, and the cone angle of the tapered coupling structure is 9.5°.

[0013] Furthermore, the tapered coupling structure is a tapered silicon structure with a width adapted to the standard WR2.2 rectangular waveguide interface.

[0014] Furthermore, the silicon ridge waveguide structure operates in the 330GHz-500GHz terahertz band and supports TM. 00 Low-loss single-mode transmission.

[0015] Furthermore, a metal electrode is fabricated on the upper surface of the silicon ridge waveguide structure, and the Schottky diode detector unit is integrated onto the metal electrode by flip-chip bonding to achieve electrical interconnection and mechanical fixation.

[0016] Furthermore, it also includes a metal package housing, in which the tapered coupling structure, silicon ridge waveguide structure, and Schottky diode detection unit are all encapsulated; the metal package housing is provided with a WR2.2 standard waveguide interface, and the tapered coupling structure is aligned with the standard waveguide interface.

[0017] A communication receiver based on a silicon waveguide integrated terahertz detector detection module is characterized in that it includes the silicon waveguide integrated terahertz detector detection module, and further includes an intermediate frequency amplifier, a signal conversion unit, and a display output unit.

[0018] The signal output terminal of the silicon waveguide integrated terahertz detector detection module is connected to the input terminal of the intermediate frequency amplifier and is used to output the detected baseband electrical signal.

[0019] The output of the intermediate frequency amplifier is divided into two paths: one path is connected to the input of the signal conversion unit, and the other path is reserved as an extended data output interface.

[0020] The output of the signal conversion unit is connected to the display output unit, and is used to convert the serial video signal into a parallel video signal for display on the display output unit.

[0021] Furthermore, the intermediate frequency amplifier is a low-noise amplifier with a working bandwidth of 100kHz-20GHz and a gain of 20dB; the signal conversion unit is an SDI to HDMI conversion module; and the display output unit is a high-definition display device.

[0022] A method for fabricating a silicon waveguide integrated terahertz detector detection module, comprising the following steps:

[0023] A high-resistivity silicon wafer with a total thickness of 200μm was selected as the substrate, and a silicon ridge waveguide structure and a tapered coupling structure were defined on the surface of the high-resistivity silicon wafer by photolithography.

[0024] The etching process is carried out using inductively coupled plasma deep etching, with the etching depth controlled at 150μm. The bottom 50μm thick silicon substrate layer is retained, forming a silicon ridge waveguide structure with a height of 150μm and a tapered coupling structure at the input end.

[0025] On the upper surface of the output end of the silicon ridge waveguide structure, a metal thin film is deposited using an electron beam evaporation process, and then patterned using a photolithography lift-off process to form coplanarly distributed anode and cathode metal electrodes.

[0026] The Schottky diode is mounted with its active side facing down, aligned with the anode and cathode metal electrodes on the surface of the silicon ridge waveguide structure, using a flip-chip bonding process to achieve electrical interconnection and mechanical fixation.

[0027] The integrated waveguide detector chip is installed into a metal package with a WR2.2 standard waveguide interface, and the tapered coupling structure is aligned with the WR2.2 standard waveguide interface to complete chip fixation and shell sealing.

[0028] Compared with the prior art, the significant advantages of this invention are:

[0029] 1. High integration and low coupling loss: The tapered coupling structure, silicon ridge waveguide, and Schottky diode are integrated into a single module. The tapered coupling structure solves the mode mismatch problem between metal waveguides and silicon waveguides; the surface evanescent field coupling scheme replaces the traditional end-face coupling, eliminating the need for an additional output waveguide conversion structure, significantly reducing coupling loss, and greatly miniaturizing the device size, thus solving the loss and error problems of discrete device assembly.

[0030] 2. Simple process and strong manufacturability: The silicon ridge waveguide replaces the traditional photonic crystal waveguide. There is no need to etch dense high-precision micro-holes. It can be fabricated by conventional micro-nano etching process. It has good process compatibility, high yield, and is compatible with mature CMOS process, which is convenient for large-scale mass production.

[0031] 3. Convenient packaging and strong practicality: The integrated waveguide structure is compatible with the WR2.2 standard waveguide interface and can be directly connected to standard terahertz testing and communication systems; the metal packaging structure has electromagnetic shielding and mechanical protection capabilities, solving the problems of low stability and difficulty in engineering application of existing waveguide devices.

[0032] 4. Simple system structure and stable performance: The direct detection communication receiver built based on this integrated detector does not require complex local oscillator and mixer circuits. The link structure is simple and highly reliable. It can realize real-time transmission of 1080P high-definition video at a bit rate of 1.5Gbps and can be directly applied to multiple fields such as terahertz high-speed communication, imaging, and security inspection. Attached Figure Description

[0033] Figure 1 This is a flowchart of the overall system of a communication receiver based on a silicon waveguide integrated terahertz detector detection module.

[0034] Figure 2 This is a schematic diagram of the cross-sectional structure of a silicon ridge waveguide;

[0035] Figure 3 This is a three-dimensional schematic diagram of the conical coupling structure;

[0036] Figure 4 Flowchart of a terahertz wireless video communication receiving system; Detailed Implementation

[0037] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The core inventive concept of the present invention is a surface-coupled hybrid integrated terahertz direct detector structure based on a silicon ridge waveguide. The following content first explains the design principle and parameter optimization basis of the core structure, and then illustrates the system application scheme and device fabrication process through two embodiments. All embodiments are only used to explain the present invention and are not intended to limit its scope of protection.

[0038] See Figure 1 The silicon waveguide integrated terahertz detector detection module of this invention consists of three core parts: a tapered coupling structure, a silicon ridge waveguide structure, and a Schottky diode detection unit. After the silicon waveguide integrated terahertz detector detection module performs direct detection of the terahertz signal, it is connected to an intermediate frequency amplifier, a signal conversion unit, and a display unit at the back end to form a complete receiving link. The core module is implemented as follows:

[0039] 1. Silicon ridge waveguide structure design

[0040] High-resistivity silicon materials exhibit extremely low free carrier absorption in the terahertz frequency band, with no free charges or currents within the material. Furthermore, silicon is a non-magnetic material. Combining Maxwell's equations, the Helmholtz equations can be derived to describe the spatial distribution of terahertz electromagnetic fields in silicon waveguides. For terahertz waves propagating along the z-direction, silicon waveguides can support both TE and TM transmission modes. The waveguide modes are essentially characteristic solutions of the Helmholtz equations under specific boundary conditions, corresponding to the field distribution of the terahertz wave across the waveguide cross-section.

[0041] For the operating range of 330GHz-500GHz (WR2.2 standard waveguide band), this invention employs an all-silicon ridge waveguide, eliminating the need for additional dielectric substrate support and combining mechanical stability with low transmission loss. Based on the Marcatili approximation, the cross-section of the ridge waveguide can be divided into a horizontal planar waveguide in the width direction and a vertical planar waveguide in the height direction, allowing for rapid calculation of the mode field distribution and mode eigenvalues ​​of the straight waveguide, providing a theoretical basis for structural design.

[0042] In some embodiments, the specific meaning of the dimensional parameters is as follows: Figure 2 As shown, a high-resistivity silicon wafer with a total thickness of 200 μm was selected as the substrate. Considering both mode confinement capability and mechanical strength, the ridge structure height h1 was determined to be 150 μm, the bottom substrate thickness h2 to be 50 μm, and the ridge width w to be 150 μm. Under these silicon ridge waveguide structure dimensions, TE... 00 With TM 00 Neither fundamental mode has a cutoff; by controlling the incident polarization through the encapsulated excitation structure, TE mode excitation can be suppressed, ensuring that the device operates in a TM polarization state, while also supporting higher-order TM modes. 10 The effective refractive index of the mode is significantly reduced, making it impossible to form an effective guided wave for transmission. Therefore, this size can achieve stable TM. 00 Single-mode transmission avoids the degradation of communication signal quality due to mode dispersion and is suitable for the manufacture of various optical waveguide structures.

[0043] 2. Conical coupling structure design

[0044] Standard rectangular metallic waveguides are a universal interface for terahertz systems, characterized by low transmission loss, high power handling capacity, and convenient interconnection. However, their TE... 10 Mode and TM of silicon ridge waveguide structure 00 The significant differences in mode field distribution mean that direct docking will result in severe mode mismatch and reflection loss. To address this issue, this invention designs an integrated tapered coupling structure at the input end of the silicon ridge waveguide structure, achieving a smooth mode transition and low-loss coupling from the metal waveguide to the silicon dielectric waveguide.

[0045] See Figure 3 A three-dimensional structural diagram of the conical coupling structure is shown. In Examples 1 and 2, the dimensions of the rectangular waveguide match those of WR2.2, with a wide side dimension a = 570 μm and a narrow side dimension b = 285 μm. The output end of the conical structure is connected to the silicon ridge waveguide structure on the substrate, with a width w of 150 μm. The length of the entire conical structure is 2 mm, and the cone angle is 9.5°. This structure and the waveguide structure are fabricated together using the same process, without additional assembly losses.

[0046] 3. Schottky diode hybrid integrated design

[0047] Schottky diodes (SBDs) are characterized by fast response and excellent nonlinear characteristics, making them a core component in terahertz direct detection architectures. This invention employs a surface evanescent field coupling scheme, eliminating the need for special treatment of the output face of the silicon ridge waveguide structure or an additional reverse waveguide coupling structure. The SBD is directly integrated onto the upper surface of the silicon waveguide output, achieving direct conversion from terahertz signals to baseband electrical signals.

[0048] TM propagation in silicon ridge waveguide structure 00 In this mode, the electric field has a component perpendicular to the upper surface of the waveguide, and part of the electromagnetic field extends into the air region above the waveguide, forming an evanescent field. When the active junction region of the SBD is placed close to the upper surface of the silicon waveguide, the terahertz evanescent field propagating in the silicon waveguide will be directly coupled into the diode junction region. Utilizing the nonlinear detection characteristics of the Schottky junction, the high-frequency terahertz modulation signal is demodulated into a baseband voltage signal.

[0049] To achieve reliable electrical interconnection and mechanical fixation, coplanar metal electrodes are fabricated on the upper surface of the output end of the silicon ridge waveguide structure. A flip-chip bonding process is then used to flip-bond the independently fabricated SBD chip to the electrode positions. In this hybrid integration scheme, the silicon ridge waveguide structure and the SBD are fabricated independently using deep silicon etching and lift-off processes, respectively, and then integrated through package-level assembly. This approach combines the low-loss advantages of the silicon ridge waveguide structure with the high-performance detection advantages of the compound semiconductor SBD, while significantly reducing process complexity and fabrication costs.

[0050] Example 1

[0051] This embodiment builds a complete terahertz wireless video communication receiving system based on the aforementioned silicon waveguide integrated terahertz detector detection module, verifying the practical performance of the device. The overall system architecture is as follows: Figure 4 As shown, the entire communication system is divided into a transmitter and a receiver, wherein the receiver is the communication receiver based on the silicon waveguide integrated terahertz detector detection module described in this invention.

[0052] The transmitting end consists of, in sequence, a terahertz signal source, a mixer, a baseband signal unit, an HDMI to SDI module, and a transmitting antenna. The terahertz source provides a carrier signal with a center frequency of 400 GHz, which is input to the mixer. During waveform testing, the baseband signal unit is an arbitrary signal generator, outputting a 10 MHz square wave test signal with a peak-to-peak value of 500 mV. During video transmission testing, the baseband signal unit is a laptop device, outputting high-definition video at a frame rate of 30 fps and a resolution of 1920×1080 (original bitrate 1.5 Gbps), which is output via the HDMI interface and converted into a serial SDI video signal by the HDMI to SDI device, then input to the mixer to modulate the terahertz carrier.

[0053] The receiving end (the communication receiver of this invention) comprises, in sequence, a silicon waveguide integrated terahertz detector detection module, an intermediate frequency amplifier, a signal conversion unit, and a display output unit. This system processes the terahertz signal captured by a wired transmission or receiving antenna through a silicon ridge waveguide structure at the radio frequency front end, then feeds it into the SBD for detection, directly demodulating the terahertz signal into a baseband electrical signal output. The intermediate frequency amplifier operates with a bandwidth of 100kHz-20GHz and a gain of 20dB, amplifying the weak baseband signal to the SDI signal standard level. The amplified signal is divided into two paths: one path is converted into a parallel HDMI signal via an SDI-to-HDMI module for input to a display device for real-time video playback; the other path is reserved as an extended data output interface, which can be connected to an oscilloscope or other data processing equipment.

[0054] Waveform Testing: An arbitrary signal generator was used as the input baseband test signal, and the output waveform of the low-noise amplifier was acquired using an oscilloscope. Oscilloscope test results showed a peak-to-peak value of 543.6mV, a 10%-90% rise time of 171.1ps, corresponding to an equivalent 3dB bandwidth of approximately 2GHz. Considering the measurement limitation of the oscilloscope's 2.5GHz channel bandwidth, the actual rise time of the signal itself is even faster, and the native bandwidth can reach over 3GHz, supporting Gbps-level transmission rates. The output waveform is consistent with the input baseband signal, with no significant distortion, verifying the feasibility of physical layer transmission in the communication link.

[0055] Video transmission test: When connected to a high-definition video source and display device, the system can stably achieve real-time wireless transmission of high-definition video with an output frame rate of 30fps, a resolution of 1920×1080, and an original bitrate of 1.5Gbps. The video playback at the receiving end is smooth, without any stuttering or screen tearing, which directly verifies the practicality and reliability of the detector of this invention in Gbps-level high-speed terahertz communication.

[0056] Example 2

[0057] This embodiment provides the specific fabrication process of the above-mentioned silicon waveguide integrated terahertz detector detection module, and the steps are as follows:

[0058] Fabrication of silicon ridge waveguide structure and tapered coupling structure: A high-resistivity silicon wafer with a total thickness of 200 μm was selected as the substrate. First, the silicon ridge waveguide structure and tapered coupling structure were defined on the surface of the silicon wafer by photolithography. Then, inductively coupled plasma (ICP) deep etching process was used to etch the structure, controlling the etching depth to 150 μm, while retaining the bottom 50 μm thick silicon substrate layer. This integrated the silicon ridge waveguide structure with a height of 150 μm and the tapered coupling structure at the input end, thus completing the fabrication of the waveguide body.

[0059] Fabrication of coplanar metal electrodes: On the upper surface of the output end of the silicon ridge waveguide structure, a Ti / Au metal thin film is deposited using an electron beam evaporation process, and then patterned using a photolithography lift-off process to form coplanarly distributed anode and cathode metal electrodes, which are used for subsequent interconnection of Schottky diodes and improve the coupling efficiency of terahertz signals.

[0060] Schottky diode hybrid integration: SBD chip assembly is carried out using flip-chip bonding process. Through high-precision mounting equipment, the active side of the Schottky diode is placed face down and precisely aligned with the metal electrode position on the surface of the silicon ridge waveguide structure. Electrical interconnection and mechanical fixation are completed simultaneously to realize the integrated structure of evanescent field coupling.

[0061] Device packaging: The integrated waveguide detector chip is installed in a metal package with a WR2.2 standard waveguide interface. The tapered coupling structure is aligned with the WR2.2 standard waveguide interface to complete chip fixation and shell sealing. Finally, a silicon waveguide integrated terahertz detector detection module that can be used independently is obtained. The metal shell provides both electromagnetic shielding and mechanical protection. The device interface is compatible with standard terahertz test and communication systems.

[0062] The embodiments of the present invention are not limited to the described examples. Any changes, simplifications, substitutions, or combinations made without departing from the spirit and principle of the present invention should be included within the scope of protection of the present invention.

[0063] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0064] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A silicon waveguide integrated terahertz detector detection module, characterized in that, It is an integrated structure, including a high-resistivity silicon substrate, a silicon ridge waveguide structure, a tapered coupling structure, and a Schottky diode detection unit; The silicon ridge waveguide structure and the tapered coupling structure are fabricated on a high-resistivity silicon substrate using a deep silicon etching process to form a terahertz signal transmission path. The tapered coupling structure is disposed at the signal input end of the silicon ridge waveguide structure to connect to an external standard waveguide, achieve mode matching, and couple the terahertz signal into the silicon ridge waveguide structure with low loss. The Schottky diode detector unit is fixed to the upper surface of the output end of the silicon ridge waveguide structure through a hybrid integration process. The terahertz signal is directly detected as a baseband electrical signal output through the evanescent field coupling formed by the transmission field in the silicon ridge waveguide structure.

2. The silicon waveguide integrated terahertz detector detection module according to claim 1, characterized in that, The high-resistivity silicon substrate has a total thickness of 200 μm, of which the bottom substrate layer has a thickness of 50 μm, and the ridge height of the silicon ridge waveguide structure is 150 μm and the ridge width is 150 μm.

3. The silicon waveguide integrated terahertz detector detection module according to claim 2, characterized in that, The tapered coupling structure has a length of 2 mm and a cone angle of 9.5°.

4. The silicon waveguide integrated terahertz detector detection module according to claim 1, characterized in that, The tapered coupling structure is a tapered silicon structure with a width adapted to the standard WR2.2 rectangular waveguide interface.

5. The silicon waveguide integrated terahertz detector detection module according to claim 1, characterized in that, The silicon ridge waveguide structure operates in a 330GHz-500GHz terahertz frequency band and supports TM 00 mode low-loss single-mode transmission.

6. The silicon waveguide integrated terahertz detector detection module according to claim 1, characterized in that, The silicon ridge waveguide structure has metal electrodes on its upper surface, and the Schottky diode detector unit is integrated onto the metal electrodes by flip-chip bonding to achieve electrical interconnection and mechanical fixation.

7. The silicon waveguide integrated terahertz detector detection module according to claim 1, characterized in that, It also includes a metal package housing, in which the tapered coupling structure, silicon ridge waveguide structure, and Schottky diode detector unit are all encapsulated; the metal package housing is provided with a WR2.2 standard waveguide interface, and the tapered coupling structure is aligned with the standard waveguide interface.

8. A communication receiver based on a silicon waveguide integrated terahertz detector detection module, characterized in that, The silicon waveguide integrated terahertz detector detection module according to any one of claims 1-7 further includes an intermediate frequency amplifier, a signal conversion unit, and a display output unit; The signal output terminal of the silicon waveguide integrated terahertz detector detection module is connected to the input terminal of the intermediate frequency amplifier and is used to output the detected baseband electrical signal. The output of the intermediate frequency amplifier is divided into two paths: one path is connected to the input of the signal conversion unit, and the other path is reserved as an extended data output interface. The output of the signal conversion unit is connected to the display output unit, and is used to convert the serial video signal into a parallel video signal for display on the display output unit.

9. The communication receiver based on a silicon waveguide integrated terahertz detector detection module according to claim 8, characterized in that, The intermediate frequency amplifier is a low-noise amplifier with a working bandwidth of 100kHz-20GHz and a gain of 20dB; the signal conversion unit is an SDI to HDMI conversion module; and the display output unit is a high-definition display device.

10. A method for fabricating a silicon waveguide integrated terahertz detector detection module, characterized in that, The method for fabricating the silicon waveguide integrated terahertz detector detection module according to any one of claims 1 to 7 includes the following steps: A high-resistivity silicon wafer with a total thickness of 200μm was selected as the substrate, and a silicon ridge waveguide structure and a tapered coupling structure were defined on the surface of the high-resistivity silicon wafer by photolithography. The etching process is carried out using inductively coupled plasma deep etching, with the etching depth controlled at 150μm. The bottom 50μm thick silicon substrate layer is retained, forming a silicon ridge waveguide structure with a height of 150μm and a tapered coupling structure at the input end. On the upper surface of the output end of the silicon ridge waveguide structure, a metal thin film is deposited using electron beam evaporation, and then patterned using photolithography lift-off to form coplanarly distributed anode and cathode metal electrodes. The Schottky diode is mounted with its active side facing down, aligned with the anode and cathode metal electrodes on the surface of the silicon ridge waveguide structure, using a flip-chip bonding process to achieve electrical interconnection and mechanical fixation. The integrated waveguide detector chip is installed into a metal package with a WR2.2 standard waveguide interface, and the tapered coupling structure is aligned with the WR2.2 standard waveguide interface to complete chip fixation and shell sealing.

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