Perovskite cell and preparation method thereof, perovskite cell assembly and preparation method thereof

Abstract

The present application relates to the technical field of perovskite battery, and discloses a perovskite battery, a preparation method thereof, a perovskite battery assembly and a preparation method thereof. The preparation method of the perovskite battery comprises the following steps: forming a perovskite battery body; arranging a grid electrode on at least one side of the perovskite battery body; providing a protective layer and pasting a solder strip on one surface of the protective layer; arranging the protective layer with the solder strip on the perovskite battery body, and the solder strip is arranged corresponding to the grid electrode; preheating the protective layer to make the protective layer melt and flow, the melted protective layer covers the solder strip and adheres to the perovskite battery body. In the present application, the melted and covered protective layer can position the solder strip and the grid electrode, improve the connection reliability, avoid the damage of high-temperature direct welding to the perovskite material, reduce the damage of the subsequent laminated packaging process to the perovskite material, and ensure the photoelectric conversion performance and power generation efficiency of the perovskite battery.

Description

Technical Field

[0001] This invention relates to the field of perovskite battery technology, specifically to perovskite batteries and their preparation methods, and perovskite battery modules and their preparation methods. Background Technology

[0002] With the rapid development of the global renewable energy industry, renewable energy is gradually replacing traditional fossil fuels as the primary source of electricity, with solar power accounting for a large share. Solar cells are mainly silicon-based, but their efficiency growth is showing a slowdown. To improve the efficiency of solar cells and reduce the cost of photovoltaic power generation, solar cells urgently need to shift towards new technologies, such as perovskite tandem cells.

[0003] Organic-inorganic hybrid haloperovskites possess photoelectric properties highly suitable for photovoltaic applications, such as high light absorption coefficient, long carrier diffusion length, and intrinsic defect tolerance. In particular, stacking perovskite cells on silicon cells can significantly increase photoelectric conversion efficiency without affecting the good stability of silicon cells. In addition, perovskite-silicon tandem cells can be built on mature silicon-based solar cell production lines, achieving production line conversion of tandem cells at low cost. However, perovskite materials have low tolerance to various external influencing factors. In particular, high temperatures can easily cause changes in the crystal structure of the material. The traditional stringing process of silicon-based solar cells usually involves first laying the solder ribbon on the main grid of the cell, and then heating it with infrared lamps. This method heats both the solder ribbon and the cell simultaneously, and the temperature exceeds 170°C, with local peak temperatures exceeding 200°C. This cannot meet the low-temperature process requirements of perovskite cells. Even when performing silver-coated copper solder ribbon welding, industrial stringing requires temperatures above 150°C. This temperature will cause thermal and mechanical damage to the perovskite-silicon tandem cell, affecting its performance. Summary of the Invention

[0004] In view of this, the present invention provides a perovskite solar cell and its preparation method, and a perovskite solar cell module and its preparation method, to solve the problem that existing perovskite solar cell modules are easily subject to thermal and mechanical damage during the stringing process.

[0005] In a first aspect, the present invention provides a method for preparing a perovskite solar cell, comprising:

[0006] Forming the main body of the perovskite solar cell;

[0007] A grid line electrode is disposed on at least one side of the perovskite cell body;

[0008] Provide a protective layer, and attach the solder strip to one side of the protective layer surface;

[0009] A protective layer with solder ribbon attached is placed on the perovskite cell body, and the solder ribbon is set in correspondence with the grid line electrodes.

[0010] The protective layer is preheated to melt and flow, and the molten protective layer covers the solder strip and adheres to the perovskite cell body.

[0011] Beneficial effects: When laying the solder ribbon, it is first initially adhered to a solid protective layer. Then, the solder ribbon and protective layer are laid on the perovskite cell body, with the solder ribbon and grid electrodes strictly aligned. The protective layer is then preheated until it melts and flows, completely covering the solder ribbon and the perovskite cell body. This molten protective layer not only positions the solder ribbon and grid electrodes, improving connection reliability, but also avoids damage to the perovskite material caused by direct high-temperature welding, ensuring a reliable connection between the solder ribbon and the grid electrodes. In addition, the protective layer can also reduce high-temperature or mechanical damage to the perovskite material caused by subsequent lamination and encapsulation processes, ensuring the photoelectric conversion performance and power generation efficiency of the perovskite cell.

[0012] In one alternative implementation, the protective layer is made of a thermoplastic elastomer material.

[0013] Beneficial effects: The preheating crosslinking process of thermoplastic elastomer materials is short and rapid, exhibiting good stability and weather resistance, and the material itself is safe and can avoid damage to perovskite solar cells.

[0014] In one alternative embodiment, the solder strip includes a solder strip body and a coating structure covering the outer surface of the solder strip body. The solder strip body is a silver-clad copper wire, and the coating structure includes a tin-lead-bismuth alloy coating.

[0015] Beneficial effects: The solder ribbon of the present invention is a low-temperature solder ribbon. The melting point of its outer tin-lead-bismuth alloy coating is about 118°C, which can meet the low-temperature process of perovskite batteries below 150°C. Furthermore, the melting point of the solder ribbon can be appropriately changed by adjusting the proportion of different metals in the coating structure.

[0016] In one optional embodiment, the temperature range for preheating the protective layer is 100°C to 110°C.

[0017] Beneficial effects: Before the lamination process, the solder ribbon is first attached to the perovskite cell body. Then, the protective layer is preheated and melted at a temperature of 100℃~110℃. This not only makes the protective layer molten and covers and fixes the solder ribbon and grid electrodes to ensure current conduction performance, but also meets the requirements of low-temperature processing of perovskite materials, so as not to damage the perovskite cell, thereby improving the photoelectric conversion efficiency.

[0018] In one alternative embodiment, forming the perovskite solar cell body includes:

[0019] Provide a base layer;

[0020] A first carrier transport layer is formed on one side surface of the substrate layer;

[0021] A perovskite absorption layer is formed on the surface of the first carrier transport layer away from the substrate layer.

[0022] A second carrier transport layer is formed on the surface of the perovskite absorber layer away from the substrate layer;

[0023] A first transparent conductive oxide layer is formed on the surface of the second carrier transport layer away from the substrate layer, and the gate electrode is disposed on the first transparent conductive oxide layer side of the perovskite cell.

[0024] Beneficial effects: The substrate layer of the present invention can be glass, silicon-based cell, perovskite-based cell, or copper-tin-gallium selenide-based cell, and can be applied to single-junction perovskite cells and perovskite tandem solar cells prepared by superimposing textured or planar silicon-based or copper-tin-gallium selenide substrate cells, avoiding high-temperature damage to the perovskite layer during stringing.

[0025] Secondly, the present invention also provides a perovskite solar cell, which is prepared by the above-described method for preparing a perovskite solar cell, comprising: a perovskite solar cell body, a grid electrode, a solder ribbon, and a protective layer. The grid electrode is disposed on at least one side surface of the perovskite solar cell body; the solder ribbon is disposed on the side of the grid electrode opposite to the perovskite solar cell body; and the protective layer is disposed on the side of the solder ribbon opposite to the perovskite solar cell body. The protective layer is adapted to melt and flow when heated, covering the solder ribbon and adhering to the perovskite solar cell body.

[0026] Beneficial effects: In the perovskite solar cell of the present invention, a protective layer covers the solder ribbon and lays it on the perovskite solar cell body, ensuring a strict correspondence between the solder ribbon and the grid electrodes. After preheating, the molten protective layer completely covers the solder ribbon and extends to the perovskite solar cell body. This molten protective layer can precisely position the relative positions of the solder ribbon and the grid electrodes, improving connection reliability, and also avoids damage to the perovskite material caused by direct high-temperature welding, ensuring a reliable connection between the solder ribbon and the grid electrodes. In addition, the protective layer can also reduce high-temperature or mechanical damage to the perovskite material caused by subsequent lamination and encapsulation processes, ensuring the photoelectric conversion performance and power generation efficiency of the perovskite solar cell.

[0027] Thirdly, the present invention also provides a method for preparing a perovskite solar cell module, comprising:

[0028] Provide the first package cover;

[0029] A first encapsulation film is provided on one side surface of the first encapsulation cover;

[0030] The perovskite solar cell described above is disposed on the side of the first encapsulation film facing away from the first encapsulation cover plate.

[0031] A second encapsulation film is provided on the side of the perovskite solar cell away from the first encapsulation cover.

[0032] A second encapsulation substrate is disposed on the side of the second encapsulation film that is opposite to the first encapsulation cover plate;

[0033] The first encapsulation cover, the first encapsulation film, the perovskite cell, the second encapsulation film, and the second encapsulation cover are laminated and heated. The first encapsulation film and the second encapsulation film are fused to form an encapsulation film layer to cover the perovskite cell. The protective layer of the perovskite cell is melted to allow the solder ribbon to be welded to the grid electrode.

[0034] Beneficial Effects: The perovskite solar cell module fabrication method of this invention cleverly integrates string bonding and encapsulation processes. The lamination heating temperature melts the encapsulation film and simultaneously melts the coating structure on the surface of the solder ribbon. During the cooling process, effective welding and fixing of the solder ribbon to the grid electrodes is completed. Furthermore, the pressure exerted on the perovskite cell during lamination improves the conductive contact between the solder ribbon, the grid electrodes, and the cell body, reducing series resistance and increasing conversion efficiency. Simultaneously, the protective layer, by positioning the solder ribbon and grid electrodes and protecting the perovskite absorber layer, avoids high-temperature damage to the perovskite absorber layer during string bonding, enabling compatibility with low-temperature processes for perovskite cells and thus improving the stability of the perovskite cell.

[0035] In one alternative implementation, the first encapsulating film, the second encapsulating film, and the protective layer are made of the same material.

[0036] Beneficial effects: The encapsulating film is made of the same thermoplastic elastomer material as the protective layer. During the lamination process, the encapsulating film and the protective layer have good compatibility, which avoids damage to the perovskite solar cell. It is beneficial to melt the coating structure on the surface of the solder strip under the protective layer while melting the encapsulating film during the lamination process, and achieve reliable and stable welding and fixing, ultimately ensuring the photoelectric conversion performance and power generation efficiency of the perovskite solar module.

[0037] In one alternative implementation, the lamination heating temperature is 130°C.

[0038] Beneficial effects: The lamination process temperature of 130℃ melts the encapsulation film of the thermoplastic elastomer material. At the same time, this temperature is sufficient to melt the coating structure on the outer surface of the solder ribbon and fix it to the grid electrode of the perovskite cell during the subsequent cooling process. This meets the requirements of the low-temperature process of perovskite materials, thereby achieving non-destructive welding while completing low-loss encapsulation. In addition, the pressure of vacuum lamination can improve the conductive contact between the solder ribbon and the grid electrode and the cell surface, and reduce the series resistance of the module.

[0039] Fourthly, the present invention also provides a perovskite solar cell module, which is prepared by the above-described method for preparing a perovskite solar cell module, comprising: a first encapsulation cover plate, a perovskite solar cell, a second encapsulation cover plate, and an encapsulation film layer; the perovskite solar cell is disposed on the side of the first encapsulation film away from the first encapsulation cover plate, and the perovskite solar cell includes: a perovskite solar cell body, a grid electrode, a solder ribbon, and a protective layer, the protective layer being adapted to melt under heating so that the solder ribbon is soldered to the grid electrode; the second encapsulation substrate is disposed on the side of the second encapsulation film away from the first encapsulation cover plate; the encapsulation film layer is disposed between the first encapsulation cover plate and the second encapsulation cover plate, and the encapsulation film layer covers the perovskite solar cell.

[0040] Beneficial Effects: The perovskite solar cell module of this invention features an encapsulating film layer covering the perovskite cells. During the lamination process, the encapsulating film melts, simultaneously melting the coating structure on the surface of the solder ribbon. During the cooling process, the solder ribbon and grid electrodes are effectively welded and fixed, improving the conductive contact between the solder ribbon, grid electrodes, and the cell body, reducing series resistance, and increasing cell conversion efficiency. Simultaneously, the protective layer efficiently positions and protects the solder ribbon and grid electrodes, as well as the perovskite absorber layer, preventing high-temperature damage to the perovskite absorber layer, improving the stability of the perovskite cells, and thus increasing the module's power generation efficiency. Attached Figure Description

[0041] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0042] Figure 1 This is a flowchart of the preparation method of perovskite solar cells according to an embodiment of the present invention;

[0043] Figure 2 This is a schematic diagram of the structure of a perovskite solar cell according to an embodiment of the present invention;

[0044] Figure 3 This is a schematic diagram of the structure of a perovskite solar cell body according to an embodiment of the present invention;

[0045] Figure 4 This is another structural schematic diagram of the perovskite solar cell body according to an embodiment of the present invention;

[0046] Figure 5 This is a flowchart of a method for preparing a perovskite solar cell module according to an embodiment of the present invention.

[0047] Figure 6This is a schematic diagram of the structure of a perovskite solar cell module according to an embodiment of the present invention;

[0048] Figure 7 This is a line graph showing the stability test of the perovskite solar cell module according to an embodiment of the present invention.

[0049] Explanation of reference numerals in the attached figures:

[0050] 10. Perovskite solar cell; 101. Perovskite solar cell body; 1011. Substrate layer; 1012. First carrier transport layer; 1013. Perovskite absorber layer; 1014. Second carrier transport layer; 1015. First transparent conductive oxide layer; 1016. Tunneling layer; 1017. Second transparent conductive oxide layer; 102. Grid line electrode; 1021. First grid line electrode; 1022. Second grid line electrode; 103. Welding ribbon; 104. Protective layer;

[0051] 20. First encapsulation cover; 30. Encapsulation film layer; 40. Second encapsulation cover; 50. Seal. Detailed Implementation

[0052] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. It should also be noted that, for ease of description, only the parts relevant to the invention are shown in the drawings, not all structures. In the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessarily obscuring the concept of the invention. Various structural schematic diagrams according to embodiments of the present invention are shown in the drawings. These figures are not drawn to scale, and some details are enlarged for clarity, and some details may be omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from actual practices due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed. In the context of the present invention, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or there may be an intermediate layer / element between them. Additionally, if one layer / component is "above" another layer / component in one orientation, then when the orientation is reversed, that layer / component can be "below" that other layer / component.

[0053] refer to Figures 1 to 4 This embodiment provides a method for preparing a perovskite solar cell. Figure 1 This is a flowchart of a method for preparing perovskite solar cells. The method includes the following steps:

[0054] Step S101: Form the perovskite solar cell body 101.

[0055] Exemplarily, the perovskite solar cell body 101 may include a substrate layer 1011, a hole transport layer, a perovskite absorber layer 1013, an electron transport layer, and a transparent conductive oxide layer. The substrate layer 1011 may be glass, a silicon-based cell, a perovskite-based cell, or a copper-tin-gallium-selenide (CuGS)-based cell, to form different perovskite-based single-junction or tandem solar cells. In this embodiment, a silicon-based heterojunction cell is used as the substrate layer 1011 to form a perovskite-silicon heterojunction tandem solar cell, and a string bonding process is performed on this basis.

[0056] Step S102: A grid electrode 102 is provided on at least one side of the perovskite cell body 101.

[0057] When the formed perovskite cell body 101 is a bifacial cell, the grid electrodes 102 are disposed on both sides of the perovskite cell 10; when the perovskite cell 10 is a unifacial cell, the grid electrodes 102 can be disposed on only one side, as long as current can be extracted.

[0058] In step S103, a protective layer 104 is provided, and a solder strip 103 is attached to one side surface of the protective layer 104.

[0059] The protective layer 104 material is a solid material with a certain degree of viscosity in its initial state. According to the specifications of the perovskite cell body 101 and the spacing of the grid electrodes 102, the solder ribbon 103 is equidistantly pasted on the protective layer 104. For example, the solder ribbon 103 in this embodiment can be a low-temperature solder ribbon.

[0060] In step S104, a protective layer 104 with the solder ribbon 103 attached is placed on the perovskite solar cell body 101, and the solder ribbon 103 is correspondingly arranged with the grid electrode 102.

[0061] A protective layer 104 with solder ribbons 103 attached is applied to the perovskite solar cell body. The solder ribbons 103 are strictly aligned with the grid electrodes 102 to form a perovskite cell 10-string structure. Each solder ribbon 103 is used to connect two adjacent perovskite solar cells, and the protective layer 104 is used to cover the solder ribbons 103.

[0062] In step S105, the protective layer 104 is preheated to melt and flow, and the molten protective layer 104 covers the welding ribbon 103 and adheres to the perovskite cell body 101.

[0063] The protective layer 104 is preheated to melt and flow, and the molten protective layer 104 completely covers the welding ribbon 103 and firmly adheres it to the perovskite solar cell body, thus forming a protection for the welding ribbon 103 and the perovskite material in the perovskite cell body 101.

[0064] In this embodiment, the perovskite solar cell, also known as the perovskite solar cell, is initially attached to a solid protective layer 104 when laying the solder ribbon 103. Then, the solder ribbon 103 and the protective layer 104 are laid on the perovskite solar cell body 101, with the solder ribbon 103 and the grid electrode 102 strictly aligned. The protective layer 104 is then preheated until it melts and flows until it completely covers the solder ribbon 103 and the perovskite solar cell body 101. This molten protective layer 104 not only positions the relative positions of the solder ribbon 103 and the grid electrode 102, improving connection reliability, but also avoids damage to the perovskite material caused by direct high-temperature welding, ensuring a reliable connection between the solder ribbon 103 and the grid electrode 102. In addition, the protective layer 104 can also reduce high-temperature or mechanical damage to the perovskite material caused by subsequent lamination and encapsulation processes, ensuring the photoelectric conversion performance and power generation efficiency of the perovskite solar cell 10.

[0065] In one embodiment, the protective layer 104 is made of thermoplastic elastomer (TPE) material, specifically a flexible coating material with a certain degree of viscosity that is doped with transparent aerogel. Compared with other coating materials, TPE material crosslinks quickly and rapidly during preheating, exhibiting good stability and weather resistance, and the material itself is safe and can avoid damage to the perovskite battery 10.

[0066] In one embodiment, the solder ribbon 103 includes a solder ribbon body and a coating structure covering the outer surface of the solder ribbon body. The solder ribbon body is a silver-clad copper wire, and the coating structure includes a tin-lead-bismuth alloy coating.

[0067] Specifically, the aforementioned solder ribbon 103 is a low-temperature solder ribbon in this embodiment. The melting point of its outer tin-lead-bismuth alloy coating is approximately 118°C, which can meet the low-temperature process of perovskite solar cells below 150°C. Furthermore, the melting point of the low-temperature solder ribbon in this embodiment can be appropriately changed by adjusting the proportion of different metals in the coating structure.

[0068] In one embodiment, the temperature range for preheating the protective layer 104 in step S105 is 100°C to 110°C.

[0069] Before the lamination process, the solder ribbon 103 is first attached to the perovskite cell body 101. Then, the protective layer 104 is preheated and melted at a temperature of 100℃~110℃. This process not only allows the protective layer 104 to become molten and cover and fix the solder ribbon 103 and the grid electrode 102, ensuring current conduction performance, but also meets the requirements of low-temperature processing of perovskite materials, preventing damage to the perovskite cell 10, thereby improving photoelectric conversion efficiency.

[0070] refer to Figure 3The above step S101, forming the perovskite solar cell body 101, includes:

[0071] Step S1011: Provide the base layer 1011.

[0072] For example, the substrate 1011 can be glass, a silicon-based cell, a perovskite-based cell, or a copper-tin-gallium-selenide (CuGS)-based cell. In this embodiment, a small-sized textured silicon-based heterojunction cell (2cm × 2cm) is used as the substrate 1011 to form a perovskite-silicon heterojunction tandem solar cell. Before using the silicon-based heterojunction cell as the substrate 1011 to prepare the tandem cell, an appropriate cleaning technique should be selected to pre-treat it to facilitate the subsequent preparation of the top cell, such as performing a 20-minute ultraviolet ozone treatment.

[0073] In step S1012, a first carrier transport layer 1012 is formed on one side surface of the substrate layer 1011.

[0074] For example, the first carrier transport layer 1012 in this embodiment can be a hole transport layer. Specifically, it can be deposited as a hole transport layer by different methods such as vacuum thermal evaporation, spin coating, magnetron sputtering, blade coating, or atomic layer deposition, such as nickel oxide, polytriarylamine (PTAA), ethyl 2-[(2-chlorophenyl)(phenyl)amino]benzoate (2PACz), and 2,2',7,7'-tetratetra[n,n-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Sprio-OMeTAD).

[0075] In step S1013, a perovskite absorption layer 1013 is formed on the side surface of the first carrier transport layer 1012 facing away from the substrate layer 1011.

[0076] Specifically, in this embodiment, forming the perovskite absorber layer 1013 includes:

[0077] Step S1013a: An inorganic halide framework layer is formed on the first carrier transport layer 1012.

[0078] Specifically, a lead iodide thin film of approximately 200 nm thickness was deposited using vacuum evaporation technology, with the vacuum level of the vacuum evaporation process set to 2 × 10⁻⁶. -6 mBar, controlling the evaporation rate at To ensure the quality of thin film deposition.

[0079] Step S1013b: An organic material layer is formed on the inorganic halide framework layer.

[0080] Specifically, an organic material layer is formed on an inorganic halide framework layer by methods such as spin coating, spraying, dipping, or slot coating.

[0081] Step S1013c: Heat-treat the inorganic halide framework layer and the organic material layer.

[0082] That is, the perovskite is transformed by heat annealing at 100℃~200℃ for 10~30 minutes to form the perovskite absorber layer 1013.

[0083] Step S1014: A second carrier transport layer 1014 is formed on the surface of the perovskite absorber layer 1013 facing away from the substrate layer 1011.

[0084] For example, the second carrier transport layer 1014 in this embodiment can be an electron transport layer. Specifically, it can be deposited by different methods such as vacuum thermal evaporation, spin coating, magnetron sputtering, blade coating, or atomic layer deposition. At least one of the following materials can be used as the electron transport layer: zinc oxide, aluminum-doped zinc oxide, C60, fullerene derivatives (PCBM), titanium nitride (TiN), tin oxide (SnO2), or BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline). In this embodiment, the above two types are selected to form a bilayer electron transport layer.

[0085] In step S1015, a first transparent conductive oxide layer 1015 is formed on the side surface of the second carrier transport layer 1014 facing away from the substrate layer 1011, and the gate electrode 102 is disposed on the side of the first transparent conductive oxide layer 1015 of the perovskite cell 10.

[0086] Specifically, a first transparent conductive oxide layer 1015 is formed on the second carrier transport layer 1014 using methods such as magnetron sputtering, atomic layer deposition, or chemical vapor deposition. The first transparent conductive oxide layer 1015 can be indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), etc. The first transparent conductive oxide layer 1015 has dual functions of optical transparency and conductivity, effectively collecting carriers, reducing light reflection, and protecting the electron transport layer structure. It is known that, as referenced... Figure 3 When the substrate 1011 is glass, the gate electrode 102 is disposed on one side away from the substrate 1011 on the first transparent conductive oxide. When the substrate 1011 is a silicon-based cell or a copper-tin-gallium-selenide-based cell, etc., forming a stacked cell with the perovskite absorber layer 1013, the gate electrode 102 can be disposed on both sides, including a first gate electrode 1021 near the perovskite absorber layer 1013 and a second gate electrode 1022 near the substrate 1011, such as... Figure 4 As shown.

[0087] The grid electrode 102 is formed on the transparent conductive oxide layer by screen printing.

[0088] In addition, such as Figure 4As shown, when the substrate 1011 is a silicon-based cell or the perovskite absorber layer 1013, forming a stacked cell, a tunneling layer 1016 is also provided between the substrate 1011 and the first carrier transport layer 1012. In this embodiment, the tunneling layer 1016 can be an indium tin oxide (ITO) thin film. A tunneling recombination junction is formed between the bottom cell formed by the substrate 1011 and the top cell formed by the perovskite absorber layer 1013 to achieve recombination of electrons and holes from different sub-cells. In addition, during the fabrication of the perovskite absorber layer 1013, the tunneling layer 1016 protects the bottom cell from damage during the deposition of the top cell, while also exhibiting good light transmittance and low resistance loss.

[0089] like Figure 2 As shown, this embodiment also provides a perovskite solar cell 10, which is prepared by the above-described perovskite solar cell preparation method, including: a perovskite solar cell body 101, a grid electrode 102, a solder ribbon 103, and a protective layer 104. The grid electrode 102 is disposed on at least one side surface of the perovskite solar cell body 101; the solder ribbon 103 is correspondingly disposed on the side of the grid electrode 102 away from the perovskite solar cell body 101; the protective layer 104 is disposed on the side of the solder ribbon 103 away from the perovskite solar cell body 101, and the protective layer 104 is adapted to melt and flow when heated, covering the solder ribbon 103 and adhering to the perovskite solar cell body 101.

[0090] In the perovskite solar cell 10 described above, a protective layer 104 covers the solder ribbon 103 and lays it on the perovskite solar cell body 101, ensuring that the solder ribbon 103 and the grid electrode 102 are strictly aligned. After preheating, the molten protective layer 104 completely covers the solder ribbon 103 and extends onto the perovskite solar cell body 101. This molten protective layer 104 can precisely position the relative positions of the solder ribbon 103 and the grid electrode 102, improving connection reliability, and also avoids damage to the perovskite material caused by direct high-temperature welding, ensuring a reliable connection between the solder ribbon 103 and the grid electrode 102. In addition, the protective layer 104 can also reduce high-temperature or mechanical damage to the perovskite material caused by subsequent lamination and encapsulation processes, ensuring the photoelectric conversion performance and power generation efficiency of the perovskite solar cell 10.

[0091] As an optional implementation method, such as Figure 3 As shown, when the substrate 1011 is glass, the perovskite cell body 101 includes a substrate 1011, a first carrier transport layer 1012, a perovskite absorption layer 1013, a second carrier transport layer 1014 and a first transparent conductive oxide layer 1015, and a grid electrode 102 is provided on one side of the first transparent conductive oxide layer 1015.

[0092] As an alternative implementation, such as Figure 4As shown, when the substrate layer 1011 is a silicon-based cell or the same, and the perovskite absorber layer 1013 forms a stacked cell, the perovskite cell body 101 includes: a second transparent oxide layer, a substrate layer 1011, a tunneling layer 1016, a first carrier transport layer 1012, a perovskite absorber layer 1013, a second carrier transport layer 1014, and a first transparent conductive oxide layer 1015. The gate electrode 102 is provided on both sides, including a first gate electrode 1021 provided on the first transparent conductive oxide side and a second gate electrode 1022 provided on the second transparent conductive oxide layer 1017 side.

[0093] like Figure 5 As shown, this embodiment also provides a method for preparing a perovskite solar cell module, including the following steps:

[0094] Step S501: Provide the first encapsulation cover 20.

[0095] For example, the first encapsulation cover 20 may be made of transparent glass as the bottom glass of the component.

[0096] Step S502: A first encapsulation film is applied to one side surface of the first encapsulation cover plate 20.

[0097] For example, the first encapsulating film described above can be a TPE film, which is disposed on the base glass.

[0098] Step S503: The perovskite cell 10 described above is disposed on the side of the first encapsulation film away from the first encapsulation cover plate 20.

[0099] The perovskite solar cell 10 prepared above is placed on the first encapsulation film with the perovskite light-absorbing layer away from the first encapsulation cover plate 20 relative to the substrate layer 1011.

[0100] Step S504: A second encapsulation film is disposed on the side of the perovskite cell 10 opposite to the first encapsulation cover plate 20.

[0101] The second encapsulating film is applied to the perovskite battery 10. For example, the second encapsulating film may be made of the same material as the first encapsulating film, or the second encapsulating film may be made of a different material than the first encapsulating film. In this embodiment, the second encapsulating film and the first encapsulating film are made of the same material.

[0102] Step S505: A second encapsulation substrate is disposed on the side of the second encapsulation film opposite to the first encapsulation cover plate 20.

[0103] For example, the second encapsulation cover 40 can be made of transparent glass as the top glass of the component, thereby completing the stacking of the first encapsulation cover 20, the first encapsulation film, the perovskite cell 10, the second encapsulation film, and the second encapsulation cover 40.

[0104] In step S506, the first encapsulation cover plate 20, the first encapsulation film, the perovskite cell 10, the second encapsulation film, and the second encapsulation cover plate 40 are laminated and heated. The first encapsulation film and the second encapsulation film are fused to form an encapsulation film layer 30 to cover the perovskite cell 10. The protective layer 104 of the perovskite cell 10 is melted so that the solder ribbon 103 is welded to the grid electrode 102.

[0105] For example, a vacuum lamination device is used to heat the stacked structural layers in a vacuum lamination process, so that the first encapsulating film and the second encapsulating film melt to form an integral encapsulating film layer 30 to cover the perovskite battery 10. At the same time, the lamination heating temperature can also further melt the coating structure on the surface of the solder ribbon 103 and complete the welding during the cooling process.

[0106] In the fabrication method of the perovskite solar cell module of this embodiment, a series bonding process and an encapsulation process are cleverly integrated. The lamination heating temperature melts the encapsulation film and the coating structure on the surface of the solder ribbon 103. During the cooling process, the solder ribbon 103 and the grid electrode 102 are effectively welded and fixed. The pressure exerted on the perovskite solar cell 10 during the lamination process improves the conductive contact between the solder ribbon 103, the grid electrode 102, and the cell body, reduces the series resistance of the cell, and improves the cell conversion efficiency. At the same time, in the above-mentioned fabrication method, the protective layer 104, due to its positioning of the solder ribbon 103 and the grid electrode 102 and its protection of the perovskite absorber layer 1013, avoids high-temperature damage to the perovskite absorber layer 1013 during the series bonding process. This allows for compatibility with the low-temperature process of the perovskite solar cell 10, thereby improving the stability of the perovskite solar cell 10.

[0107] The perovskite battery module mentioned above is also known as a perovskite solar cell module.

[0108] In one embodiment, the first encapsulating film, the second encapsulating film, and the protective layer 104 are made of the same material.

[0109] In other words, both encapsulation films are made of the same thermoplastic elastomer material as the protective layer 104. During the lamination process, the encapsulation film and the protective layer 104 have good compatibility, which avoids damage to the perovskite solar cell 10. This is beneficial for melting the coating structure on the surface of the solder ribbon 103 under the protective layer 104 while melting the encapsulation film during the lamination process, and achieving reliable and stable welding and fixing, ultimately ensuring the photoelectric conversion performance and power generation efficiency of the perovskite solar module.

[0110] In one embodiment, the lamination heating temperature in step S506 is 130°C.

[0111] The lamination process temperature of 130°C melts the encapsulation film of the thermoplastic elastomer material. At the same time, this temperature is sufficient to melt the coating structure on the outer surface of the solder ribbon 103 and fix it to the grid electrode 102 of the perovskite cell 10 during the subsequent cooling process. This satisfies the low-temperature process of the perovskite material, thereby achieving non-destructive welding while completing low-loss encapsulation. Furthermore, the pressure of vacuum lamination can improve the conductive contact between the solder ribbon 103 and the grid electrode 102 and the cell surface, reducing the series resistance of the module.

[0112] In one embodiment, after providing the first encapsulation cover 20 in step S501 and before providing the first encapsulation film on one side surface of the first encapsulation cover 20 in step S502, the method further includes: providing a sealing member 50 around one side surface of the first encapsulation cover 20.

[0113] Specifically, such as Figure 6 As shown, the sealing element 50 in this embodiment is made of butyl rubber, and the thickness of the sealing element 50 is greater than the thickness of the internal encapsulation device. The internal encapsulation device includes a first encapsulation film, a perovskite cell 10, and a second encapsulation film. The perovskite cell 10 with the fixed solder ribbon 103 is placed in the middle area of ​​the bottom glass with butyl rubber attached. The bottom of this area is also provided with the first encapsulation film. Then, the solder ribbon 103 is connected to the busbar, and the busbar is led out of the encapsulation cover plate through the butyl rubber. Then, sufficient second encapsulation film is filled in the middle encapsulation area to cover the second encapsulation cover plate 40, and lamination encapsulation is performed using a vacuum lamination device.

[0114] For the perovskite solar cell module prepared by the method described in this embodiment, the data results of multiple measurements of cell parameters before and after lamination and stringing show that: the average photoelectric conversion efficiency (PCE) of the bare cell without lamination and stringing is 24.9%, and the series resistance (R) is... s The average value of the perovskite solar cell 10 formed after lamination and stringing in this embodiment is 30.40Ω; while the average value of the photoelectric conversion efficiency of the perovskite solar cell 10 formed after lamination and stringing in this embodiment is 25.43%, and the average value of the series resistance is 28.71Ω. From the above data, it can be seen that after lamination and stringing in this embodiment, the photoelectric conversion efficiency of the cell is significantly improved, while the series resistance is significantly reduced.

[0115] The encapsulated perovskite solar cell modules were subjected to a dual 85 (85°C, 85% humidity) stability test, and the results are as follows: Figure 7 As shown, after being stored for 1100 hours under dual 85 conditions, the efficiency of the perovskite solar cell module in this embodiment drops to about 80%, demonstrating excellent stability.

[0116] refer to Figure 1 and Figure 6This embodiment also provides a perovskite solar cell module, which is prepared by the above-described method for preparing a perovskite solar cell module. The module includes: a first encapsulation cover plate 20, a perovskite solar cell 10, a second encapsulation cover plate 40, and an encapsulation film layer 30. The perovskite solar cell 10 is disposed on the side of the first encapsulation film facing away from the first encapsulation cover plate 20. The perovskite solar cell 10 includes: a perovskite solar cell body 101, a grid electrode 102, a solder ribbon 103, and a protective layer 104. The protective layer 104 is adapted to melt under heating so that the solder ribbon 103 is soldered to the grid electrode 102. The second encapsulation substrate is disposed on the side of the second encapsulation film facing away from the first encapsulation cover plate 20. The encapsulation film layer 30 is disposed between the first encapsulation cover plate 20 and the second encapsulation cover plate 40, and the encapsulation film layer 30 covers the perovskite solar cell 10.

[0117] In this embodiment of the perovskite solar cell module, the encapsulating film layer 30 covers the perovskite solar cell 10. During the lamination process, the encapsulating film melts, simultaneously melting the coating structure on the surface of the solder ribbon 103. During the cooling process, the solder ribbon 103 and the grid electrode 102 are effectively welded and fixed, improving the conductive contact between the solder ribbon 103, the grid electrode 102, and the cell body, reducing the cell series resistance, and increasing the cell conversion efficiency. Simultaneously, the protective layer 104 efficiently positions and protects the solder ribbon 103 and the grid electrode 102, as well as the perovskite absorber layer 1013, preventing high-temperature damage to the perovskite absorber layer 1013, improving the stability of the perovskite solar cell module, and thus increasing the module's power generation efficiency.

[0118] Further functional descriptions of the above modules and units are the same as those in the corresponding embodiments described above, and will not be repeated here.

[0119] The above description does not provide detailed explanations of the technical aspects of each layer's patterning, etching, etc. However, those skilled in the art should understand that various technical means can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above. Additionally, although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination.

[0120] Although embodiments of the invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations all fall within the scope defined by the appended claims.

Claims

1. A method for preparing a perovskite solar cell, characterized in that, include: Forming the main body of the perovskite solar cell; A grid line electrode is provided on at least one side of the perovskite cell body; A protective layer is provided, and a solder strip is attached to one side surface of the protective layer; The protective layer with the solder ribbon attached is disposed on the perovskite solar cell body, and the solder ribbon is disposed corresponding to the grid line electrode. The protective layer is preheated to melt and flow, and the molten protective layer covers the solder strip and adheres to the perovskite cell body.

2. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The protective layer is made of thermoplastic elastomer material.

3. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The solder strip includes a solder strip body and a coating structure covering the outer surface of the solder strip body. The solder strip body is a silver-clad copper wire, and the coating structure includes a tin-lead-bismuth alloy coating.

4. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The temperature range for preheating the protective layer is 100℃~110℃.

5. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The perovskite solar cell body comprises: Provide a base layer; A first carrier transport layer is formed on one side surface of the substrate layer; A perovskite absorption layer is formed on the surface of the first carrier transport layer away from the substrate layer; A second carrier transport layer is formed on the surface of the perovskite absorber layer opposite to the substrate layer; A first transparent conductive oxide layer is formed on the side surface of the second carrier transport layer away from the substrate layer, and the gate electrode is disposed on the side of the first transparent conductive oxide layer of the perovskite cell.

6. A perovskite solar cell, prepared by the method for preparing a perovskite solar cell according to any one of claims 1-5, characterized in that, include: Perovskite solar cell substrate; A grid electrode is disposed on at least one side surface of the perovskite cell body; The welding strip is disposed on the side of the grid electrode opposite to the perovskite cell body; A protective layer is disposed on the side of the solder strip opposite to the perovskite cell body; the protective layer is adapted to melt and flow when heated, cover the solder strip and adhere to the perovskite cell body.

7. A method for preparing a perovskite solar cell module, characterized in that, include: Provide the first package cover; A first encapsulation film is provided on one side surface of the first encapsulation cover plate; A perovskite battery is disposed on the side of the first encapsulation film opposite to the first encapsulation cover plate, wherein the perovskite battery is the perovskite battery according to any one of claims 1-5. A second encapsulation film is provided on the side of the perovskite solar cell opposite to the first encapsulation cover plate; A second encapsulation substrate is disposed on the side of the second encapsulation film that is opposite to the first encapsulation cover plate; The first encapsulation cover, the first encapsulation film, the perovskite cell, the second encapsulation film, and the second encapsulation cover are laminated and heated, and the first encapsulation film and the second encapsulation film are fused to form an encapsulation film layer to cover the perovskite cell. The protective layer of the perovskite solar cell is melted to weld the solder strip to the grid electrode.

8. The method for preparing a perovskite solar cell module according to claim 7, characterized in that, The first encapsulating film, the second encapsulating film, and the protective layer are made of the same material.

9. The method for preparing a perovskite solar cell module according to claim 7, characterized in that, The lamination heating temperature is 130°C.

10. A perovskite solar cell module, prepared by the method for preparing a perovskite solar cell module according to any one of claims 7-9, characterized in that, include: First encapsulation cover; A perovskite solar cell is disposed on the side of the first encapsulation film opposite to the first encapsulation cover plate. The perovskite solar cell includes: a perovskite solar cell body, a grid electrode, a solder ribbon, and a protective layer. The protective layer is adapted to melt under heating so that the solder ribbon is welded to the grid electrode. The second encapsulation substrate is disposed on the side of the second encapsulation film opposite to the first encapsulation cover plate; An encapsulating film layer is disposed between the first encapsulation cover plate and the second encapsulation cover plate, and the encapsulating film layer covers the perovskite solar cell.

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