Power semiconductor assembly with circuit carrier, heat sink and electronic circuit and method for manufacturing the same

Abstract

The invention relates to a power semiconductor assembly (2) comprising a circuit carrier (4), a heat sink (6) and at least one electronic circuit (8) having at least one power semiconductor element (14) and at least one intermediate circuit capacitor (16). In order to improve the switching behavior of the power semiconductor assembly (2) and at the same time to ensure sufficient cooling, it is proposed that the electronic circuit (8) is connected to the circuit carrier (4) in a first region (22), wherein the heat sink (6) is connected to the circuit carrier (4) in a second region (24) which is horizontally spaced apart from the first region (22), wherein the circuit carrier (4) has a heat conductor (26) with a channel structure (28) in which a heat transfer fluid (30) is arranged, wherein at least one first channel (32) of the channel structure (28) is arranged in the first region (22) and at least one second channel (34) of the channel structure (28) is arranged in the second region (24), wherein the at least one first channel (32) is in fluid communication with the at least one second channel (34) such that the electronic circuit (8) is in thermally conductive connection with the heat sink (6) via the heat conductor (26).

Description

Technical Field

[0001] The present invention relates to a power semiconductor component having a circuit carrier, a heat sink and at least one electronic circuit having at least one power semiconductor element and at least one intermediate circuit capacitor.

[0002] Furthermore, the present invention relates to a power converter having at least one such power semiconductor component.

[0003] In addition, the present invention relates to a method for manufacturing a power semiconductor component having a circuit carrier, a heat sink and at least one electronic circuit having at least one power semiconductor element and at least one intermediate circuit capacitor. Background Technology

[0004] Such power semiconductor components are used, for example, in power converters. Power converters should be understood, for example, as rectifiers, inverters, converters, or DC-DC voltage converters. These power semiconductor components are typically configured as power modules. Power semiconductor elements used in power semiconductor components particularly include transistors, bidirectional thyristors, or diodes. Such transistors can particularly be configured as insulated-gate bipolar transistors (IGBTs) or wide-bandgap transistors. Wide-bandgap transistors can, for example, be implemented using silicon carbide or gallium nitride technology, and are particularly capable of achieving higher switching frequencies.

[0005] Publication EP 3 958 306 A1 describes a power module having at least two power semiconductor components that are contacted and connected on a substrate, and these power semiconductor components are arranged in a housing.

[0006] The planar construction and connection techniques of electronic circuits not only reduce the parasitic inductance of power semiconductors, thereby enabling higher switching frequencies, but also increase power density.

[0007] Publication WO 2020 / 249479 A1 describes an electronic circuit having a first circuit carrier and a second circuit carrier, as well as a first semiconductor device and a second semiconductor device. The first semiconductor device is attached to the lower side of the first circuit carrier from its upper side and to the upper side of the second circuit carrier from its lower side. The first circuit carrier has a first via connecting the first semiconductor device to a first conductive trace. The first circuit carrier has a second via electrically connecting a connecting element disposed between the circuit carriers to another conductive trace.

[0008] Publication EP 4 300 574 A1 describes an assemblable power module comprising a power substrate having a metallization layer, at least one switchable die having a power terminal, an interposer layer, and at least one first contact element and one second contact element, wherein the contact elements respectively provide electrical contact of a power terminal of the die at the interposer layer.

[0009] To ensure adequate cooling of the electronic circuitry in power semiconductor components, heat sinks are positioned as close as possible to the power semiconductor components. For effective heat dissipation, heat conduction devices can be used. These heat conduction devices, also known as heat pipes, typically contain a heat transfer fluid for two-phase cooling. Heat conduction devices can be specifically configured as heat pipes, pulsating heat pipes, or thermosiphons.

[0010] Publication WO 2022 / 214231 A1 describes a semiconductor module arrangement having a cooler and at least one semiconductor module in contact with the cooler. To achieve more efficient heat dissipation and lower manufacturing costs compared to existing technologies, it is proposed that the cooler includes a cooler base element and a cooler attachment, wherein the cooler attachment has a channel structure on a first surface in which a heat transfer fluid is arranged, wherein the cooler base element has a cooler base element surface, and wherein the channel structure is hermetically sealed by a material bonding connection with the cooler base element surface, such that both the cooler attachment and the cooler base element are in direct contact with the heat transfer fluid, wherein a pulsating heat pipe is formed by the sealed channel structure and the heat transfer fluid, and the pulsating heat pipe is in a thermally conductive connection with the semiconductor module.

[0011] Publication WO 2021 / 099019 A1 describes an electronic module. The electronic module includes a pulsating heat pipe having a channel structure in which a heat transfer medium is disposed; and at least one electrical component that is in direct contact with the heat transfer medium and / or connected to a conductive contact element that is in direct contact with the heat transfer medium.

[0012] Intermediate circuit capacitors are typically electrolytic capacitors. Due to space constraints, these capacitors are spaced further apart from the power semiconductor components, making it difficult to achieve optimal low-inductance electrical connections between them. In particular, the spacing between the power semiconductor components and the intermediate circuit capacitors results in higher commutation inductance, which adversely affects the switching behavior of the power semiconductor components. Summary of the Invention

[0013] In this context, the purpose of the present invention is to improve the switching behavior of power semiconductor components while ensuring adequate cooling.

[0014] This objective is achieved according to the invention by a power semiconductor assembly comprising a circuit carrier, a heat sink, and at least one electronic circuit having at least one power semiconductor element and at least one intermediate circuit capacitor, wherein the electronic circuit is connected to the circuit carrier in a first region, wherein the heat sink is connected to the circuit carrier in a second region of the circuit carrier, the second region being arranged horizontally spaced from the first region, wherein the circuit carrier has a heat-conducting element with a channel structure in which a heat transfer fluid is arranged, wherein at least one first channel of the channel structure is arranged in the first region of the circuit carrier, and at least one second channel of the channel structure is arranged in the second region of the circuit carrier, wherein the at least one first channel and the at least one second channel are in fluid communication, such that the electronic circuit is thermally connected to the heat sink via the heat-conducting element.

[0015] Furthermore, this objective is achieved according to the invention by a power converter having at least one such power semiconductor component.

[0016] Furthermore, this objective is achieved according to the invention by a method for manufacturing a power semiconductor component having a circuit carrier, a heat sink, and at least one electronic circuit having at least one power semiconductor element and at least one intermediate circuit capacitor, wherein the electronic circuit is connected to the circuit carrier in a first region, wherein the heat sink is connected to the circuit carrier in a second region horizontally spaced apart from the first region, wherein the circuit carrier has a heat-conducting element with a channel structure in which a heat transfer fluid is arranged, wherein at least one first channel of the channel structure is arranged in the first region, and at least one second channel of the channel structure is arranged in the second region, wherein the at least one first channel and the at least one second channel are in fluid communication such that the electronic circuit is thermally connected to the heat sink via the heat-conducting element.

[0017] The advantages and preferred configurations of power semiconductor components listed below can be adapted to power converters and manufacturing methods.

[0018] This invention is based on the consideration of improving the switching behavior of a power semiconductor device by reducing the commutation inductance of its electronic circuitry. The electronic circuitry has at least one power semiconductor element and at least one intermediate circuit capacitor connected to a circuit carrier. The circuit carrier can, in particular, have a substrate comprising at least one, especially double-sided metallized, dielectric material layer. The circuit carrier can have multiple interconnected substrates. For example, at least one power semiconductor element and at least one intermediate circuit capacitor can be connected to the structured metallization layer of the substrate by material bonding, especially by welding and / or sintering. At least one power semiconductor element can, in particular, include an IGBT and / or a wide bandgap transistor. Multiple power semiconductor elements can be connected to form an electronic switching circuit, such as a half-bridge, and these multiple power semiconductor elements can, in particular, include transistors and diodes. During operation of the power semiconductor device, heat loss generated in the electronic circuitry is dissipated via a heat sink, which, for example, includes a metal coolant.

[0019] To reduce commutation inductance, an electronic circuit having at least one power semiconductor element and at least one intermediate circuit capacitor is connected to the circuit carrier in a first region, such that the at least one power semiconductor element and the at least one intermediate circuit capacitor have the smallest possible spacing. In this way, an optimal low-inductance electrical connection is achieved between the intermediate circuit capacitor and the power semiconductor component. Since the at least one intermediate circuit capacitor, for example, an electrolytic capacitor, occupies a relatively large mounting space, a heat sink is connected to the circuit carrier in a second region, which is horizontally spaced from the first region, i.e., along the surface of the circuit carrier. In particular, with this arrangement, the spacing between the at least one power semiconductor element and the at least one intermediate circuit capacitor can be significantly smaller than the spacing between the heat sink and the at least one power semiconductor element or the at least one intermediate circuit capacitor.

[0020] To ensure adequate cooling, the circuit carrier incorporates a heat-conducting element through which the electronic circuitry is thermally connected to the heat sink. This heat-conducting element, also known as a heat pipe, has a channel structure in which a heat transfer fluid is arranged. Specifically, the heat transfer fluid arranged in the channel structure is configured for two-phase cooling of the electronic circuitry based on its thermal conductivity and boiling point. The heat-conducting element can be particularly configured as a heat pipe, a pulsating heat pipe, or a thermosiphon. At least one first channel of the channel structure is arranged in a first region, and at least one second channel of the channel structure is arranged in a second region, wherein the at least one first channel and the at least one second channel are in fluid communication. This arrangement, which reduces commutation inductance, improves the switching behavior of the electronic circuitry while ensuring heat dissipation through the heat-conducting element.

[0021] Another embodiment specifies that the circuit carrier has a circuit board having a first surface and a second surface disposed on a side opposite to the first surface, wherein the heat-conducting element is planarly connected to the surface of the circuit board. For example, a channel structure is introduced into the base element of the heat-conducting element and is fluid-tightly sealed by the first surface of the circuit board, particularly its substantially flat surface. Alternatively, the channel structure can be arranged, particularly entirely, within the base element, wherein the base element is fully connected to the first surface of the circuit board, for example, by adhesive bonding. This arrangement ensures reliable and efficient heat dissipation.

[0022] Another embodiment specifies that a heat-conducting element is arranged between the circuit board and at least one intermediate circuit capacitor, wherein the at least one intermediate circuit capacitor has terminals, particularly implemented using through-hole technology, arranged to extend through the heat-conducting element and connected to the circuit board, particularly by a material bond. This material bond connection between the intermediate circuit capacitor and the circuit board can be manufactured, particularly by soldering. By arranging the heat-conducting element between the circuit board and at least one intermediate circuit capacitor, waste heat generated in the at least one intermediate circuit capacitor is efficiently dissipated via the heat-conducting element, while ensuring a reliable connection to the circuit board.

[0023] Another embodiment specifies that the terminals of at least one intermediate circuit capacitor are in direct contact with the heat transfer fluid of the heat conduction element. This reduces thermal resistance and improves heat dissipation from the at least one intermediate circuit capacitor to the heat sink.

[0024] Another embodiment specifies that the heat sink and at least one intermediate circuit capacitor are arranged on the same surface of the circuit carrier. The heat sink and at least one intermediate circuit capacitor, especially compared to other components on the circuit carrier and particularly in the vertical direction, occupy a larger mounting space. This arrangement on the same surface of the circuit carrier allows for flexible and compact positioning of other components, which further reduces parasitic inductance.

[0025] Another embodiment specifies that the heat sink is in direct contact with the heat transfer fluid of the heat conduction element. This reduces thermal resistance and improves heat dissipation from the heat sink.

[0026] Another embodiment specifies that at least one second channel of the channel structure is arranged to extend at least partially through the radiator in the second region. Specifically, the radiator is configured as a metal cooling body, and at least one second channel is at least partially introduced into the metal cooling body. This introduction can be made, in particular, by means of a cutting process, such as milling. Improved heat dissipation is achieved by the channel extending at least partially through the radiator, which is, in particular, metal.

[0027] Another embodiment specifies that the heat sink is made of a first metallic material, and the heat sink has a second metallic material at least at the junction with the second channel of the channel structure, the second metallic material having a higher thermal conductivity than the first metallic material. For example, the heat sink, which serves as a cooling body, is made of aluminum alloy, wherein the coating is made of copper or a copper alloy. The higher thermal conductivity of copper improves heat dissipation.

[0028] Another embodiment specifies that the heat-conducting element has a substrate element in at least a first region, wherein the substrate element is at least partially made of a dielectric material. Dielectric or electrically insulating materials can particularly include polymers or ceramic materials. Ceramic materials can achieve an electrically insulating structure of the substrate element and have good thermal properties. Especially when using vertical power semiconductor devices, such as IGBTs, it is advantageous to have a substrate element at least partially made of a dielectric material that establishes an electrically insulating and thermally conductive connection to the heat sink.

[0029] Another embodiment specifies that the circuit carrier has a metal core disposed within a cavity, wherein at least one power semiconductor element is bonded to the metal core in a material-bonded manner. This metal core can be made of copper or a copper alloy, in particular. Specifically, the metal core completely fills the cavity and terminates substantially flush with the surface of the circuit carrier. This metal core forms a heat capacity disposed between the at least one power semiconductor element and a heat conductor, which helps to bridge the start-up time of the pulsating heat pipe during cold starts of the power semiconductor assembly. This cavity can extend partially or completely through the circuit carrier. A cavity extending completely through the circuit carrier can also be referred to as an opening, and this cavity can be filled with a metal core, which is, for example, configured as a metal insert, particularly a "copper coin." A cavity extending partially through the circuit carrier can be filled, in particular, by an embedded thick copper structure. Furthermore, the metal core serves for heat diffusion.

[0030] Another embodiment specifies that the metal core is in direct contact with the heat transfer fluid of the heat conductor. In particular, the metal core is in direct contact with the heat transfer fluid on the side opposite to the power semiconductor element, thereby achieving improved heat dissipation.

[0031] Another embodiment specifies that at least one power semiconductor element is configured as a vertical power semiconductor element and is connected to a circuit carrier in a material-bonded manner using planar construction and interconnection techniques. The vertical power semiconductor element has a first load terminal and a second load terminal, wherein the power semiconductor element is designed to conduct load current between the first and second load terminals in a vertical direction. The vertical power semiconductor element can be, in particular, an IGBT or a vertical SiC-MOSFET. The planar construction and interconnection techniques eliminate the need for specialized techniques such as wire bonding required by conventional packaging interconnection technologies. The load terminals of the vertical power semiconductor element are contacted on both sides with planar connectors, such as with a substrate, especially a printed circuit board (PCB) and / or a DCB (Direct Copper Bonded) substrate. Improved reliability and extended lifespan are achieved by using planar construction and interconnection techniques.

[0032] Another embodiment specifies that at least one power semiconductor element is disposed on a surface between at least two intermediate circuit capacitors. If at least one power semiconductor element is disposed horizontally on a surface between at least two intermediate circuit capacitors, shorter connection lines are achieved, and thus smaller commutation inductance is achieved. Attached Figure Description

[0033] The present invention will now be described and illustrated in more detail with reference to the embodiments shown in the accompanying drawings.

[0034] The attached diagram shows: Figure 1 A schematic cross-sectional view showing a first embodiment of a power semiconductor component is shown. Figure 2 A schematic cross-sectional view showing a second embodiment of the power semiconductor component is shown. Figure 3 A schematic cross-sectional view showing a third embodiment of a power semiconductor component is shown. Figure 4 An enlarged schematic cross-sectional view of a fourth embodiment of a power semiconductor device is shown. Figure 5 An enlarged schematic cross-sectional view of a fifth embodiment of a power semiconductor component is shown. Figure 6 A schematic cross-sectional view showing a sixth embodiment of a power semiconductor component is shown. Figure 7 A partial schematic diagram of a heat-conducting component is shown. Figure 8 A schematic diagram is shown of an injection molding method for manufacturing base component parts. Figure 9 An enlarged schematic cross-sectional view of a sixth embodiment of a power semiconductor component is shown. Figure 10 An enlarged schematic cross-sectional view of a seventh embodiment of a power semiconductor component is shown. Figure 11 A schematic cross-sectional view, shown in top view, illustrating an eighth embodiment of a power semiconductor component. Figure 12 An enlarged schematic cross-sectional view of a ninth embodiment of a power semiconductor device is shown. Figure 13 A schematic cross-sectional view showing a ninth embodiment of a power semiconductor device is shown. Figure 14 A schematic diagram of a power converter is shown. Detailed Implementation

[0035] The embodiments described below are preferred embodiments of the invention. In these embodiments, the components of the described embodiments represent individual features of the invention that can be considered independently of each other, and these features also independently improve the invention, and therefore can also be considered as part of the invention individually or in combinations other than those shown. Furthermore, the described embodiments can also be supplemented by other features of the invention already described.

[0036] The same reference numerals have the same meaning in different figures.

[0037] Figure 1 A schematic cross-sectional view of a first embodiment of a power semiconductor assembly 2 is shown, the assembly having a circuit carrier 4, a heat sink 6, and electronic circuitry 8. The heat sink 6 is exemplarily configured as a metal coolant having a base plate 10 and cooling fins 12. The metal coolant is made of a first metallic material, which can in particular include aluminum or an aluminum alloy. For example, the coolant is manufactured from an aluminum alloy by extrusion molding. The electronic circuitry 8 includes a power semiconductor element 14 and an intermediate circuit capacitor 16, the power semiconductor element 14 being, for example, capable of having an IGBT and / or a wide bandgap transistor. The circuit carrier 4 has a substantially flat first surface 18 and a substantially flat second surface 20 disposed on a side opposite to the first surface 18. A horizontal xy-plane is defined by the substantially flat second surface 20.

[0038] The power semiconductor element 14 and intermediate circuit capacitor 16 of electronic circuit 8 are connected to circuit carrier 4 in the first region 22, particularly by means of material bonding, wherein the power semiconductor element 14 is connected to circuit carrier 4 on both sides. The power semiconductor element 14 is arranged horizontally between the intermediate circuit capacitor 16, thereby shortening the connection line and thus reducing the commutation inductance. The heat sink 6 is connected to circuit carrier 4 in the second region 24, wherein the second region 24 is arranged horizontally spaced from the first region 22. The heat sink 6 and intermediate circuit capacitor 16 are arranged on the first surface 18 of circuit carrier 4.

[0039] The circuit carrier 4 has a heat-conducting element 26 with a channel structure 28 in which a heat transfer fluid 30 is arranged, wherein the heat transfer fluid 30 is configured for two-phase cooling. The heat-conducting element 26 can be particularly configured as a heat pipe, a pulsating heat pipe, or a thermosiphon. At least one first channel 32 of the channel structure 28 is arranged in a first region 22 of the circuit carrier 4, and at least one second channel 34 of the channel structure 28 is arranged in a second region 24 of the circuit carrier 4. At least one first channel 32 and at least one second channel 34 are in fluid communication, wherein the channels 32, 34 form the channel structure 28 of the heat-conducting element 26. For example, the circuit carrier 4 has multiple layers, each comprising a dielectric material and / or a metallic material, wherein the channel structure 28 of the heat-conducting element 26 is integrated into at least one layer of the circuit carrier 4. Furthermore, the channel structure 28 is fluid-tightly closed on both sides in the vertical direction or in the z-direction through adjacent layers. For example, a meandering channel structure 28 is introduced into at least one layer of the layered circuit carrier 4. As the heat transfer fluid 30, conductive or electrically insulating fluids can be used. In particular, water-glycol mixtures, dielectric liquids, and / or oils are possible.

[0040] The intermediate circuit capacitor 16 is exemplarily configured as an aluminum electrolytic capacitor employing through-hole technology and has terminals 36 arranged to extend through the thermal conductive element 26 and the circuit carrier 4. Exemplarily, the terminals 36 of the intermediate circuit capacitor 16 are bonded to the second surface 20 in a material-bonded manner, particularly by welding. A first channel 32 is arranged extending around the terminals 36 of the intermediate circuit capacitor 16. A cooling element is bonded, for example, to a metallization layer 38 disposed on the first surface 18 of the circuit carrier 4 in a material-bonded manner, wherein the metallization layer 38 is thermally connected to the thermal conductive element 26 via metallized through-contacts 39, particularly “thermal vias.” The power semiconductor element 14 is also connected to the thermal conductive element 26 via metallized through-contacts 39. Thus, the power semiconductor element 14 and the intermediate circuit capacitor 16 of the electronic circuit 8, horizontally spaced from the heat sink 6, are thermally connected to the heat sink 6 via the thermal conductive element 26.

[0041] Figure 2 A schematic cross-sectional view of a second embodiment of the power semiconductor assembly 2 is shown. The circuit carrier 4 has a circuit board 40 with a first surface 18 and a second surface 20, wherein the circuit board 40 is exemplary configured as a printed circuit board (PCB) and is capable of having multiple layers. The circuit board 40 also has a cavity 42 in which a metal core 44 is disposed, the metal core being, in particular, made of copper or a copper alloy. The cavity 42 is arranged to extend completely through the circuit board 40 and can also be referred to as an opening in the circuit board 40. The metal core 44 completely fills the opening and is configured as a metal insert, in particular a “copper coin.” Such a circuit board 40 having at least one “copper coin” disposed in the opening is also called a “copper coin PCB.” In particular, the metal core 44 closes the cavity 42 substantially flush with the second surface 20. At least one power semiconductor element 14 is connected to the metal core 44 in a material-bonded manner. On the side opposite to the at least one power semiconductor element 14, the metal core 44 is in direct contact with the heat transfer fluid 30 of the heat conductor 26.

[0042] The heat-conducting element 26 has a base element 46, at least partially made of a dielectric material, which is planarly connected to the first surface 18 of the circuit board 40. For example, a channel structure 28 is introduced into the base element 46 of the heat-conducting element 26 in the first region 22 and is fluid-tightly sealed by the substantially flat first surface 18 of the circuit board 40. Alternatively, the channel structure 28 can be arranged in the first region 22 to extend within the base element 46, wherein the base element 46 is planarly connected to the first surface 18 of the circuit board 40, particularly by adhesive bonding. A first channel 32 of the channel structure 28 extends parallel to the first surface 18 through the base element 46, wherein, in particular, a meandering channel structure is formed to ensure the best possible heat diffusion. Thus, in the first region 22, the heat-conducting element 26 is arranged vertically between the circuit board 40 and the intermediate circuit capacitor 16.

[0043] Furthermore, the heat conduction element 26 is arranged in the region of the second channel 34 of the channel structure 28 to extend through the cooling body base plate 10 of the cooling body, wherein the second channel 34 extends through the cooling body base plate 10, particularly at least partially meandering, parallel to the first surface 18. For example, on the side opposite to the cooling fins 12, the second channel 34 of the channel structure 28 is introduced into the cooling body base plate 10 of the cooling body, particularly by means of machining, and is fluid-tightly sealed by the connection between the base element 46 and the substantially flat first surface 18 of the circuit board 40. The cooling body base plate 10 and the base element 46 are connected by a material bond, for example by adhesive bonding, such that the first channel 32 and the second channel 34 are in fluid communication, and the heat conduction element 26 is fluid-tightly encapsulated. Figure 2Other configurations of the power semiconductor component 2 in the middle correspond to Figure 1 The configuration in.

[0044] Figure 3 A schematic cross-sectional view of a third embodiment of the power semiconductor component 2 is shown. The circuit carrier 4 has a circuit board 40 with a first surface 18 and a second surface 20, wherein the circuit board 40 has multiple layers, each layer comprising a dielectric material and / or a metallic material. A first channel 32 of the channel structure 28 of the heat conductor 26 is arranged in a first region 22 within a layer of the circuit board 40, wherein the first channel 32 of the channel structure 28 is fluid-tightly closed on both sides through adjacent layers in the vertical direction or in the z-direction.

[0045] In the second region 24, the second channel 34 of the channel structure 28 is arranged to extend through the cooling body base plate 10 of the cooling body. The cooling body base plate 10 has a coating 48 made of a second metallic material adjacent to the second channel 34, wherein the second metallic material has a higher thermal conductivity than the first metallic material. For example, a cooling body made of aluminum alloy may have a coating made of copper or a copper alloy. Therefore, the coating 48 of the cooling body base plate 10 is in direct contact with the heat transfer fluid 30 of the heat conductor 26, and the second channel 34 is fluid-tightly sealed in the second region 24. Figure 3 Other embodiments of the power semiconductor component 2 correspond to Figure 2 The implementation method in the text.

[0046] Figure 4 An enlarged schematic cross-sectional view of a fourth embodiment of the power semiconductor component 2 is shown, wherein the substrate element 46 of the heat conductor 26 is made of a dielectric or electrically insulating material. The dielectric material of the substrate element can, in particular, comprise polymer or ceramic materials. Ceramic materials enable an electrically insulating structure of the substrate element 46 and possess good thermal properties. The heat transfer fluid 30 is an electrically insulating fluid. For example, perfluoro-N-alkylmorpholine is suitable as the electrically insulating heat transfer fluid 30 of the heat conductor 26 due to its high thermal conductivity, boiling point, and dielectric properties.

[0047] The circuit carrier 4 includes a multilayer circuit board 40. Furthermore, a vertical power semiconductor element 14 is connected to the circuit carrier 4 via a material bond using planar construction and interconnection techniques. This eliminates the need for specialized techniques required for conventional packaging interconnects, such as wire bonding, thereby improving the reliability and extending the lifespan of the power semiconductor assembly 2. Exemplarily, a transistor T and a diode D connected in antiparallel to the transistor T are material bonded to the structured metallization layer 38 of the outer layer 49 of the circuit board 40. On the side facing away from the circuit board 40, the vertical power semiconductor element 14 is material bonded to, for example, a copper-containing metal frame 50. This material bond connection is manufactured, for example, by soldering or sintering. The terminals of the vertical power semiconductor element 14 facing away from the circuit board 40 are connected to the metallization layer 38 of the outer layer 49 of the circuit board 40 via connecting elements 52. The power semiconductor element 14 is in direct contact with an electrically insulating fluid. Figure 4 Other embodiments of the power semiconductor component 2 correspond to Figure 2 The implementation method in the text.

[0048] Figure 5 An enlarged schematic cross-sectional view of a fifth embodiment of the power semiconductor assembly 2 is shown, in which the base element 46 of the heat-conducting element 26 is made of a metallic material and therefore a conductive material. On the side opposite to the circuit board 40, the vertical power semiconductor element 14 is bonded to the substrate 53, particularly to a DCB (Direct Copper Bonded) substrate, by means of material bonding. The power semiconductor element 14 and the connecting element 52 are embedded in a potting material 54, which is made, for example, by means of an underfill material.

[0049] Figure 6 A schematic cross-sectional view of a sixth embodiment of the power semiconductor component 2 is shown. In the first region 22, the heat-conducting element 26 has a substrate element 46, which is as follows: Figure 4 The first channel 32 is made of a dielectric or electrically insulating material and is fluid-tightly sealed in the vertical or z-direction. The second channel 34 extends completely and parallel to the first surface 18 through the cooling body base plate 10. The second channel 34 of the channel structure 28 extends through the cooling body base plate 10, for example, meanderingly. This second channel is introduced, for example, by machining and subsequently sealed by a cover, particularly a cover plate, in a material-bonded manner. For example, the cover plate is welded on to form the second channel 34 of the channel structure 28. The first channel 32 and the second channel 34 are fluidly connected by the base element 46 to the cooling body base plate 10, for example, by adhesive bonding, and the heat-conducting element 26 is fluid-tightly encapsulated. Figure 6 Other embodiments of the power semiconductor component 2 correspond to Figure 2 The implementation method in the text.

[0050] Figure 7 A partial schematic diagram of the heat conductor 26 is shown, illustrated in top view (a) and cross-sectional view (b). The base element 46 of the heat conductor 26 is made of a dielectric material and includes a hollow portion 55 for forming a channel structure 28 in which a heat transfer fluid 30 is disposed. Alternatively, the base element 46 of the heat conductor 26 can be made of a metallic material, such as aluminum and / or copper. The base element 46 is composed of two parts: a first base element component 56 and a second base element component 58, each having a wall portion 60 and a recess 62 disposed between the walls 60. Flat surfaces 64 are respectively arranged on the side opposite to the recess 62. The base element components 56 and 58 are connected to each other by their respective corresponding walls 60, wherein a joint area 66 is formed between the first base element component 56 and the second base element component 58, which is created by a fluid-sealed joint of the two halves, such as by bonding or welding. The channel structure 28 is formed by combining the corresponding recesses 62. Furthermore, the heat-conducting element 26 has a through cylindrical recess 68 for accommodating the terminals 36 of the intermediate circuit capacitor 16. Optionally, the surface of the substrate element 46, made of a conductive material, can be at least partially provided with a dielectric material, particularly a thermally conductive one.

[0051] Figure 8 A schematic diagram of an injection molding method for manufacturing a base element component 56 is shown. The mold 70 for the injection molding method has an upper mold portion 72 and a lower mold portion 74, with a casting cavity 76 for forming the base element component 56 arranged between the upper and lower mold portions. Before actual injection molding A, a spacer 78, particularly cylindrical, is inserted into the casting cavity 76. Injection molding can be performed, in particular, with dielectric materials, especially polymers. Alternatively, injection molding can be performed with metallic materials. After the base element component 56 has solidified, and especially cooled, the spacer 78 is removed from the casting cavity 76 B to obtain a through notch 68 in the base element component 56. Alternatively, the base element component 56 can also be manufactured, for example, by additive 3D printing. Figure 8 Other embodiments of the base element component 56 correspond to Figure 7 The implementation method in the text.

[0052] Figure 9An enlarged schematic cross-sectional view of a sixth embodiment of a power semiconductor assembly 2 is shown, the power semiconductor assembly having a thermally conductive element 26 made of a dielectric material. The base element of the thermally conductive element 26 is planarly connected to a first surface 18 of a circuit board 40, wherein the thermally conductive element 26 is disposed between the circuit board 40 and an intermediate circuit capacitor 16 implemented using a through-hole technique. The intermediate circuit capacitor 16 has terminals 36 arranged to extend through recesses 68 of the thermally conductive element 26 and are material-bonded to the circuit board 40. Exemplarily, the terminals 36 are guided via metallized through-contact portions 80 and are material-bonded via solder joints 82. Figure 9 Other embodiments of the power semiconductor component 2 correspond to Figure 6 The implementation method in the text.

[0053] Figure 10 An enlarged schematic cross-sectional view of a seventh embodiment of the power semiconductor assembly 2 is shown, wherein at least one power semiconductor element 14 is bonded to a metal core 44 in a material-bonded manner. The metal core 44 is in direct contact with the substrate element 46 of the heat conductor 26. The power semiconductor element 14 and the intermediate circuit capacitor 16 are arranged vertically on opposite sides of the circuit carrier 4. Furthermore, the power semiconductor element 14 is arranged horizontally between the intermediate circuit capacitors 16, thereby shortening the connection line and thus reducing the commutation inductance. Figure 10 Other embodiments of the power semiconductor component 2 correspond to Figure 9 The implementation method in the text.

[0054] Figure 11 A schematic cross-sectional view, shown in top view, illustrates an eighth embodiment of the power semiconductor assembly 2. The electronic circuit 8 includes a power semiconductor element 14 and an intermediate circuit capacitor 16, and is connected to a circuit carrier 4 in a first region 22, while a heat sink 6 is connected to the circuit carrier 4 in a second region 24. The first region 22 and the second region 24 are arranged horizontally spaced apart, exemplarily arranged parallel to the x-axis. The power semiconductor element 14 and the intermediate circuit capacitor 16 are arranged in rows 84, 86, and 88 extending parallel to the y-axis, wherein the power semiconductor row 88 is arranged between the first capacitor row 84 and the second capacitor row 86.

[0055] The channel structure 28, configured as a heat conduction element 26, particularly a pulsating heat pipe, includes a first channel 32 extending exemplarily meandering in a first region 22 and a second channel 34 extending exemplarily meandering in a second region 24, wherein the first channel 32 and the second channel 34 are in fluid communication. The meandering structure of channels 32, 34 extends exemplarily perpendicular to rows 84, 86, 88 of the power semiconductor element 14 and the intermediate circuit capacitor 16. Exemplarily, two terminals 36 of each intermediate circuit capacitor 16 are arranged exemplarily parallel to the meandering structure of the first channel 32 and are left open within the meandering structure of the first channel 32. Figure 11 Other embodiments of the power semiconductor component 2 correspond to Figure 10 The implementation method in the text.

[0056] Figure 12 An enlarged schematic cross-sectional view of a ninth embodiment of the power semiconductor component 2 is shown, wherein, as Figure 6 As shown, the vertical power semiconductor element 14 is connected to the circuit carrier 4 via a material bonding method using planar construction and connection technology. On the side opposite to the circuit board 40, the vertical power semiconductor element 14 is connected to the DCB substrate via a material bonding method. An additional cooling body 90 is arranged on the side of the substrate opposite to the vertical power semiconductor element 14. This additional cooling body is exemplary made of a metallic material, particularly an aluminum alloy, and has a cooling body base plate 10 and cooling fins 12. Figure 12 Other embodiments of the power semiconductor component 2 correspond to Figure 11 The implementation method in the text.

[0057] Figure 13 A schematic cross-sectional view of a ninth embodiment of the power semiconductor assembly 2 is shown. The circuit board 40 has multiple layers 92, 94, and 96, including an upper layer 92, an exemplary intermediate layer 94, and a lower layer 96. The channel structure 28 of the heat conductor 26 is integrated into the intermediate layer 94 of the circuit board 40. The terminals 36 of the intermediate circuit capacitor 16 and the cooling body base plate 10 are in direct contact with the heat transfer fluid 30 via a gap 98 in the lower layer 96. In the first region 22, the gap between the intermediate circuit capacitor 16 and the circuit board 40 within the gap 98 is sealed in a fluid-tight manner by an adhesive, particularly dielectric, sealing material 100. The cooling body base plate 10 seals the gap 98 in the second region 24 by a material bonding connection 102, particularly an adhesive or soldered connection, to the metallization layer 38 of the lower layer 96. Therefore, the terminals 36 of the intermediate circuit capacitor 16 are fluidly connected to the heat sink 6 via the heat transfer fluid 30. Figure 13 Other embodiments of the power semiconductor component 2 correspond to Figure 6 The implementation method in the text.

[0058] Figure 14 A schematic diagram of a power converter 104 is shown, which exemplarily includes a power semiconductor component 2.

[0059] In summary, the present invention relates to a power semiconductor component 2 having a circuit carrier 4, a heat sink 6, and at least one electronic circuit 8 having at least one power semiconductor element 14 and at least one intermediate circuit capacitor 16. To improve the switching behavior of the power semiconductor component 2 while ensuring adequate cooling, it is proposed that the electronic circuit 8 be connected to the circuit carrier 4 in a first region 22, wherein the heat sink 6 is connected to the circuit carrier 4 in a second region 24 horizontally spaced from the first region 22, wherein the circuit carrier 4 has a heat-conducting element 26 with a channel structure 28 in which a heat transfer fluid 30 is arranged, wherein at least one first channel 32 of the channel structure 28 is arranged in the first region 22, and at least one second channel 34 of the channel structure 28 is arranged in the second region 24, wherein the at least one first channel 32 and the at least one second channel 34 are in fluid communication, such that the electronic circuit 8 is thermally connected to the heat sink 6 via the heat-conducting element 26.

Claims

1. A power semiconductor assembly (2) comprising a circuit carrier (4), a heat sink (6), and at least one electronic circuit (8), said electronic circuit having at least one power semiconductor element (14) and at least one intermediate circuit capacitor (16). in, The electronic circuit (8) is connected to the circuit carrier (4) in the first region (22). The heat sink (6) is connected to the circuit carrier (4) in the second region (24), which is horizontally spaced from the first region (22). The circuit carrier (4) has a heat-conducting element (26) with a channel structure (28), in which a heat transfer fluid (30) is arranged. In the first region (22), at least one first channel (32) of the channel structure (28) is arranged, and in the second region (24), at least one second channel (34) of the channel structure (28) is arranged. The at least one first channel (32) and the at least one second channel (34) are in fluid communication. This allows the electronic circuit (8) to be thermally connected to the heat sink (6) via the thermal conductive element (26).

2. The power semiconductor component (2) according to claim 1. in, The circuit carrier (4) has a circuit board (40) having a first surface (18) and a second surface (20) arranged on a side opposite to the first surface (18). The heat-conducting element (26) is connected to the surfaces (18, 20) of the circuit board (40) in a planar manner.

3. The power semiconductor component (2) according to claim 2. in, The heat-conducting element (26) is arranged between the circuit board (40) and the at least one intermediate circuit capacitor (16). The at least one intermediate circuit capacitor (16) has terminals (36) implemented, in particular by through-hole technology, which are arranged to extend through the heat conductor (26) and are connected to the circuit board (40) in a material-bonded manner.

4. The power semiconductor component (2) according to claim 3, wherein, The terminal (36) of the at least one intermediate circuit capacitor (16) is in direct contact with the heat transfer fluid (30) of the heat conductor (26).

5. The power semiconductor component (2) according to any one of claims 2 to 4, wherein, The heat sink (6) and the at least one intermediate circuit capacitor (16) are arranged on the same surface (18, 20) of the circuit carrier (4).

6. The power semiconductor component (2) according to any one of the preceding claims, wherein, The radiator (6) is in direct contact with the heat transfer fluid (30) of the heat conductor (26).

7. The power semiconductor component (2) according to any one of the preceding claims, wherein, The at least one second channel (34) of the channel structure (28) is arranged to extend at least partially through the heat sink (6) in the second region (24).

8. The power semiconductor component (2) according to claim 7, wherein, The heat sink (6) is made of a first metal material and has a second metal material at least adjacent to the second channel (34) of the channel structure (28), the second metal material having a higher thermal conductivity than the first metal material.

9. The power semiconductor component (2) according to any one of the preceding claims, wherein, The heat-conducting element (26) has a base element (46) in at least the first region (22), wherein the base element (46) is at least partially made of a dielectric material.

10. The power semiconductor component (2) according to any one of the preceding claims, wherein, The circuit carrier (4) has a metal core (44) arranged in a cavity (42), wherein at least one power semiconductor element (14) is connected to the metal core (44) in a material bond manner.

11. The power semiconductor component (2) according to claim 10, wherein, The metal core (44) is in direct contact with the heat transfer fluid (30) of the heat conductor (26).

12. The power semiconductor component (2) according to any one of the preceding claims, wherein, At least one power semiconductor element (2) is configured as a vertical power semiconductor element (2) and is connected to the circuit carrier (4) in a material bonding manner by means of planar construction and connection technology.

13. The power semiconductor component (2) according to any one of the preceding claims, wherein, At least one power semiconductor element (14) is arranged on the surface between at least two intermediate circuit capacitors (16).

14. A power converter (104) having at least one power semiconductor component (2) according to any one of the preceding claims.

15. A method for manufacturing a power semiconductor component (2), the power semiconductor component having a circuit carrier (4), a heat sink (6) and at least one electronic circuit (8), the electronic circuit having at least one power semiconductor element (14) and at least one intermediate circuit capacitor (16). in, The electronic circuit (8) is connected to the circuit carrier (4) in the first region (22). The heat sink (6) is connected to the circuit carrier (4) in the second region (24), and the second region is horizontally spaced from the first region (22). The circuit carrier (4) has a heat-conducting element (26) with a channel structure (28), in which a heat transfer fluid (30) is arranged. In this configuration, at least one first channel (32) of the channel structure (28) is arranged in the first region (22), and at least one second channel (34) of the channel structure (28) is arranged in the second region (24). The at least one first channel (32) and the at least one second channel (34) are in fluid communication. This allows the electronic circuit (8) to be thermally connected to the heat sink (6) via the thermal conductive element (26).

16. The method according to claim 15, wherein, The base element (46) of the heat-conducting element (26) is made of dielectric material by means of an injection molding method, wherein the injection molding method includes the following steps: - Injection mold (A) the first base element component (56) and the second base element component (58) each having a recess (62). - Join the base element components (56, 58), wherein the channel structure (28) is generated by combining the recesses (62).

17. The method according to claim 16, wherein, Before injection molding, a cylindrical stencil (78) is placed into the casting cavity (76), wherein, after the dielectric material has cured, the stencil (78) is removed from the casting cavity (76) (B) to obtain a notch (68) in the base element component (56, 58).

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