A plastic sealing material for HBM high bandwidth memory chip and a preparation method thereof

Abstract

This invention relates to a molding compound for HBM high-bandwidth memory chips, comprising component A and component B. Component A comprises, by weight, the following raw materials: liquid epoxy resin, 3.9-26.2 parts; low-viscosity epoxy resin, 3-5 parts; rubber toughening agent, 10-15 parts; special additives, 0.3-0.5 parts; colorant, 0.5-0.6 parts; and powder filler, 60-75 parts. Component B comprises, by weight, the following raw materials: anhydride curing agent, 89.2-93.6 parts; polyol modifier, 5-8 parts; liquid additives, 0.2-0.3 parts; and accelerator, 1.2-2.5 parts. The preparation method includes the following steps: step S1, preparation of component A; step S2, preparation of component B; and step S3, mixing and curing. The advantages of this invention are high Tg, low CTE, low moisture absorption, and high reliability, while also possessing excellent processing performance, meeting the requirements of HBM high-bandwidth memory chips.

Description

Technical Field

[0001] This invention relates to the field of advanced packaging for HBM high-bandwidth memory chips, and particularly to a molding compound for HBM high-bandwidth memory chips and its preparation method. Background Technology

[0002] HBM is a high-bandwidth memory chip that vertically stacks multiple DRAM chips and uses TSV technology to achieve high-speed interconnection. HBM features ultra-high bandwidth, low power consumption, and high integration, making it an important component of AI training chips, data centers, supercomputers, and autonomous driving.

[0003] Existing epoxy molding compounds have the following problems: 1. Insufficient fluidity: The packaging of HBM high-bandwidth memory chips is a stacked structure, with many dead corners and irregular structures between the layers. Due to insufficient fluidity, the epoxy molding compound cannot fill the dead corners and irregular structures, resulting in structural defects.

[0004] 2. Insufficient reliability: HBM high-bandwidth memory chips are used in harsh environments with high temperature and humidity. Traditional epoxy molding compounds have insufficient temperature resistance and aging resistance, and are prone to failure during long-term use, resulting in insufficient reliability.

[0005] 3. High warpage: The stacked structure of HBM high-bandwidth memory chips is prone to warpage and deformation. In high-temperature and high-humidity environments, the molding compound is prone to warpage, which affects the chip packaging quality.

[0006] 4. Insufficient insulation: Advanced encapsulation has higher requirements for the insulation of epoxy resin, so the epoxy resin system that is compatible with advanced encapsulation needs to be improved accordingly.

[0007] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0008] To address the shortcomings of existing technologies, this invention discloses a molding compound for HBM high-bandwidth memory chips and its preparation method.

[0009] A molding compound for HBM high-bandwidth memory chips includes component A and component B: Component A comprises raw materials in parts by weight: Liquid epoxy resin, 3.9~26.2 parts; Low-viscosity epoxy resin, 3-5 parts; Rubber toughening agent, 10-15 parts; Special additives, 0.3~0.5 parts; Color-matching agent, 0.5~0.6 parts; Powder filler, 60-75 parts; Component B comprises raw materials in parts by weight: Anhydride curing agent, 89.2~93.6 parts; Polyol modifier, 5-8 parts; Liquid additive, 0.2~0.3 parts; Accelerator, 1.2~2.5 parts.

[0010] Furthermore, the weight ratio of component A to component B ranges from 100:80 to 120.

[0011] Furthermore, the liquid epoxy resin includes one or two of bisphenol F type epoxy resin, bisphenol A / F type epoxy resin, bisphenol A type epoxy resin, alicyclic epoxy resin, and o-cresol formaldehyde epoxy resin.

[0012] Furthermore, the low-viscosity epoxy resin includes one or two of butylene glycol glycidyl ether, hexanediol glycidyl ether, polypropylene glycol glycidyl ether, and trimethylolpropane glycidyl ether.

[0013] Furthermore, the rubber toughening agent includes one or two of liquid CTBN rubber, polyurethane modified rubber, and core-shell rubber.

[0014] Furthermore, the special additives include defoamers, dispersants, coupling agents, and leveling agents; The defoamer is a solution of defoaming polymer and polysiloxane; The dispersant is a polyphosphate ester; The coupling agent is γ-glycidoxypropyltrimethoxysilane; The leveling agent is polyether-modified polydimethylsiloxane; The colorant is carbon black; The powder filler is silica and alumina, wherein the silica is spherical silica and the alumina is spherical alumina; the powder filler includes three particle sizes: 4~6μm, 1~2μm and 0.5μm, and the proportions of the three particle sizes are 20~30%, 45~65% and 15~5%, respectively.

[0015] Furthermore, the anhydride curing agent includes one or two of methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, SMA anhydride, methylnadic anhydride, and polypropylene glycol modified anhydride.

[0016] Furthermore, the polyol modifier is a polyol with a functionality of 2-3, including polyether diol, polycaprolactone diol or triol, butanediol, hexanediol, and polyethylene glycol.

[0017] Furthermore, the liquid additive includes an ion scavenger and an antioxidant; The ion trapping agent is a dual ion exchange trapping agent, specifically one of IXEPLAS-A1, IXEPLAS-B1, or IXE-600. The antioxidant is a phosphite antioxidant, specifically TP-10H, 317, TP-8, or tris(2,4-di-tert-butylphenyl) phosphite. The accelerator is one of the following: DBU modified salt, C16 tertiary amine, chelation accelerator, dimethyl phosphate salt, and modified imidazole accelerator.

[0018] A method for preparing a molding compound for HBM high-bandwidth memory chips includes the following steps: Step S1, preparation of component A, includes the following steps: The first step involves accurately weighing liquid epoxy resin, low-viscosity epoxy resin, rubber toughening agent, special additives, and colorant and adding them to a reaction vessel at 50-70°C. Then, start stirring at a speed of 60-80 rpm for 1-1.5 hours. The second step is to divide the powder filler into three equal parts and add them into the reactor in three separate batches, with a 10-minute interval between each batch. After the addition is completed, the vacuum is turned on and the vacuum stirring time is controlled to be 1-2 hours. The third step is to sample and test the physical properties of component A. After passing the test, the sample is filtered through a 100-mesh filter and then stored for later use. Step S2, preparation of component B, includes the following steps: The first step is to accurately weigh the acid anhydride curing agent, then put it into a reaction vessel at 50~60℃, start stirring, and set the speed to 60~80 rpm / min. The material is mixed and preheated for 0.5 hours. The second step involves adding the polyol modifier into the reactor, where the acid anhydride curing agent and the polyol modifier react fully for 1-2 hours. The third step is to cool the reactor temperature to below 40°C, then add the liquid additives and accelerators to the reactor and stir for 0.5 hours. Samples are taken to test the physical properties of component B. After passing the test, the components are filtered through a 300-mesh filter and finally stored for later use. Step S3, Mix and cure: Mix component A and component B in a weight ratio of 100:80~120, and use after curing.

[0019] Advantages of the invention: 1. Liquid epoxy resin and low-viscosity epoxy resin are used as the main resin to ensure that the molding compound has high fluidity. Combined with acid anhydride curing agents with large filler content and low viscosity, the viscosity of the mixed adhesive can be further reduced. Spherical powder filler is used. Spherical filler has better fluidity and processing performance, and can also reduce the viscosity of the system to the greatest extent. This effectively solves the processability problem of HBM high bandwidth memory chips and ensures that the stacked structure of HBM high bandwidth memory chips is defect-free.

[0020] 2. Use epoxy resins with high crosslinking density and high Tg, especially alicyclic epoxy resins. These resins have high Tg and low CTE after curing, and excellent stability and temperature resistance. Control the amount of powder filler. High filler means that the molding compound has a very good resistance to high temperature and high humidity conditions. Combined with anhydride curing agents, which have a cyclic structure, excellent temperature resistance and aging resistance, it can be used for a long time under high temperature and high humidity conditions. The combination of these factors can ensure the high reliability of the molding compound, thereby improving the service life of HBM high bandwidth memory chips.

[0021] 3. Component A uses a rubber-based toughening agent. This type of toughening material exhibits minimal deformation under high and low temperature conditions, effectively absorbing thermal stress generated during the overall deformation of the molding compound and mitigating the "silver streaks" that appear within the molding compound, resulting in excellent toughening and modification. Component B uses 5-8% polyol modifiers. These substances react chemically with acid anhydride curing agents to generate long-chain, flexible acid anhydride curing agents, which possess both reactivity and improved low-warpage performance of the adhesive. The curing agent system uses accelerators with moderate reactivity and low heat release. These accelerators react at medium to high temperatures, generating very little heat during the polymerization process. This allows the thermal stress and deformation of the molding compound to be controlled within a very small range, further preventing warpage and deformation.

[0022] 4. Epoxy resins with a high number of benzene ring structures are selected as the main resin, and alicyclic epoxy resins are preferred as special resins to increase the cyclic structure content of the polymerization system. The insulation of the product is thus improved. Furthermore, the spherical powder filler and acid anhydride curing agent also have good insulation properties. Attached Figure Description

[0023] Figure 1 This is a schematic diagram illustrating the steps of a molding compound for HBM high-bandwidth memory chips. Detailed Implementation

[0024] To further illustrate the technical means and effects of the present invention in achieving its intended purpose, the following detailed description of the specific implementation methods, structures, features, and effects of the present invention, in conjunction with the accompanying drawings and preferred embodiments, is provided below.

[0025] Example 1:

[0026] A molding compound for HBM high-bandwidth memory chips comprises component A and component B. The weight ratio of component A to component B is 100:95.

[0027] Component A comprises raw materials in parts by weight: Liquid epoxy resin, 11.1 parts. Specifically, it consists of 4.6 parts of bisphenol F type epoxy resin EPIKOTE862 and 6.5 parts of alicyclic epoxy resin 3150CE.

[0028] Low-viscosity epoxy resin, 4 parts. Specifically, low-viscosity epoxy resin XY621 (butanediol glycidyl ether).

[0029] Rubber toughening agent, 12 parts. Specifically, rubber toughening agent RA1340 (liquid CTBN rubber).

[0030] Specialty additives, 0.4 parts. These include: defoamer BYK-A530 (defoaming polymer and polysiloxane solution), 0.1 parts; dispersant BYK-9011 (acidic copolymer), 0.1 parts; coupling agent A-187 (γ-glycidyl etheroxypropyltrimethoxysilane), 0.1 parts; and leveling agent BYK-333 (polyether-modified polydimethylsiloxane), 0.1 parts.

[0031] Colorant, 0.5 parts. Specifically, ENSACO carbon black 250g.

[0032] Powder filler, 60 parts. The powder filler includes fillers with three particle sizes: 4~6μm, 1~2μm and 0.5μm, specifically 25% powder filler NQ2040GH, 50% powder filler Q03X, and 25% powder filler SC 2500-SXJ.

[0033] Component B comprises raw materials in parts by weight: Anhydride curing agent, 91.75 parts. Specifically, 76.75 parts methylhexahydrophthalic anhydride and 15 parts SMA EF30.

[0034] Polyol modifier, 6 parts. Specifically, it is a polycaprolactone diol modifier.

[0035] Liquid adjuvant, 0.25 parts. Specifically, 0.1 parts of ion scavenger IXEPLAS-A1 and 0.15 parts of phosphite antioxidant TP-10H.

[0036] Accelerator, 2.0 parts. Specifically, accelerator U-CAT SA102 (2-ethylhexanoate of DBU).

[0037] A method for preparing a molding compound for HBM high-bandwidth memory chips, such as... Figure 1 As shown, it includes the following steps: Step S1, preparation of component A, includes the following steps: The first step involves accurately weighing liquid epoxy resin, low-viscosity epoxy resin, rubber toughening agent, special additives, and colorant and adding them to a reactor at 55°C. Stirring is then started at a speed of 70-80 rpm for 1 hour. The second step is to divide the powder filler into three equal parts and add them into the reactor in three batches, with a 10-minute interval between each batch. After the addition is completed, the vacuum is turned on and the vacuum stirring time is controlled to be 1.5 hours. The third step is to sample and test the physical properties of component A. After passing the test, the sample is filtered through a 100-mesh filter and then stored for later use. Step S2, preparation of component B, includes the following steps: The first step is to accurately weigh the acid anhydride curing agent, then put it into a 55°C reactor, start stirring at a speed of 60~70 rpm, and preheat the material for 0.5 hours. The second step involves adding the polyol modifier into the reactor, where the acid anhydride curing agent and the polyol modifier react fully for 1.0 hour. The third step is to cool the reactor temperature to below 40°C, then add the liquid additives and accelerators to the reactor and stir for 0.5 hours. Samples are taken to test the physical properties of component B. After passing the test, the components are filtered through a 300-mesh filter and finally stored for later use. Step S3, Mixing and Curing: Mix component A and component B in a weight ratio of 100:95, and then perform three-stage curing under the following conditions: 90℃ / 1h + 110℃ / 1h + 150℃ / 3h. Once curing is complete, the product is obtained.

[0038] Example 2:

[0039] A molding compound for HBM high-bandwidth memory chips comprises component A and component B. The weight ratio of component A to component B is 100:105.

[0040] Component A comprises raw materials in parts by weight: Liquid epoxy resin, 21.02 parts. Specifically, bisphenol A type epoxy resin jER828EL, 6.02 parts, and alicyclic epoxy resin CELLOXIDE 2021P, 15 parts.

[0041] Low-viscosity epoxy resin, 3 parts. Specifically, low-viscosity epoxy resin XY207A (polypropylene glycol glycidyl ether).

[0042] Rubber toughening agent, 10 parts. Specifically, rubber toughening agent MX-136 (core-shell rubber).

[0043] Specialty additives, 0.38 parts. Including defoamer 5300 (defoaming polymer and polysiloxane solution), 0.06 parts; dispersant BYK-163 (acidic copolymer), 0.1 parts; coupling agent KBM-903 (γ-glycidyl etheroxypropyltrimethoxysilane), 0.12 parts; leveling agent BYK-354 (polyether modified polydimethylsiloxane), 0.1 parts.

[0044] Colorant, 0.5 parts. Specifically, ENSACO carbon black 150g.

[0045] Powder filler, 70 parts. The powder filler includes fillers with three particle sizes: 4~6μm, 1~2μm and 0.5μm, specifically 30% powder filler F200, 55% powder filler Q02X and 15% powder filler NQS205B.

[0046] Component B comprises raw materials in parts by weight: Anhydride curing agent, 93.25 parts. Specifically, 73.25 parts methylhexahydrophthalic anhydride and 20 parts hexahydrophthalic anhydride.

[0047] Polyol modifier, 5 parts. Specifically, butanediol modifier.

[0048] Liquid adjuvant, 0.25 parts. Specifically, 0.15 parts of ion scavenger IXEPLAS-A2 and 0.1 parts of phosphite antioxidant 317.

[0049] Accelerator, 1.5 parts. Specifically, accelerator U-CAT SA102 (2-ethylhexanoate of DBU).

[0050] A method for preparing a molding compound for HBM high-bandwidth memory chips, such as... Figure 1 As shown, it includes the following steps: Step S1, preparation of component A, includes the following steps: The first step involves accurately weighing liquid epoxy resin, low-viscosity epoxy resin, rubber toughening agent, special additives, and colorant and adding them to a 60°C reactor. Then, start stirring at a speed of 60-70 rpm for 1.5 hours. The second step is to divide the powder filler into three equal parts and add them into the reactor in three batches, with a 10-minute interval between each batch. After the addition is completed, the vacuum is turned on and the vacuum stirring time is controlled for 2.0 hours. The third step is to sample and test the physical properties of component A. After passing the test, the sample is filtered through a 100-mesh filter and then stored for later use. Step S2, preparation of component B, includes the following steps: The first step is to accurately weigh the acid anhydride curing agent, then put it into a 60°C reactor, start stirring at a speed of 60~70 rpm, and mix and preheat the materials for 1.5 hours. The second step involves adding the polyol modifier into the reactor, where the acid anhydride curing agent and the polyol modifier react fully for 1.0 hour. The third step is to cool the reactor temperature to below 40°C, then add the liquid additives and accelerators to the reactor and stir for 0.5 hours. Samples are taken to test the physical properties of component B. After passing the test, the components are filtered through a 300-mesh filter and finally stored for later use. Step S3, Mixing and Curing: Mix component A and component B in a weight ratio of 100:95, and then perform three-stage curing under the following conditions: 100℃ / 1.5h + 150℃ / 3h. Once curing is complete, the product is obtained.

[0051] Example 3:

[0052] A molding compound for HBM high-bandwidth memory chips comprises component A and component B. The weight ratio of component A to component B is 100:83.5.

[0053] Component A comprises raw materials in parts by weight: Liquid epoxy resin, 5.66 parts. Specifically, bisphenol A type epoxy resin 850S, 2.66 parts, and alicyclic epoxy resin CELLOXIDE 2081, 3 parts.

[0054] Low-viscosity epoxy resin, 5 parts. Specifically, low-viscosity epoxy resin XY632 (hexanediol glycidyl ether).

[0055] Rubber toughening agent, 13.5 parts. Specifically, rubber toughening agent DY-965 (polyurethane modified rubber).

[0056] Specialty additives, 0.32 parts. These include defoamer BYK-141 (a foam-breaking polymer and polysiloxane solution), 0.10 parts; dispersant G-700 (acidic copolymer), 0.05 parts; coupling agent KBM-803 (γ-glycidyl etheroxypropyltrimethoxysilane), 0.10 parts; and leveling agent BYK-354 (polyether-modified polydimethylsiloxane), 0.07 parts.

[0057] Color complement, 0.52 parts. Specifically, color complement ENSACO 260G.

[0058] Powder filler, 65 parts. The powder filler includes fillers with three particle sizes: 4~6μm, 1~2μm and 0.5μm, specifically composed of 20% powder filler SE-009X, 55% powder filler SS-N10 and 25% powder filler NQS005.

[0059] Component B comprises raw materials in parts by weight: Anhydride curing agent, 90.5 parts. Specifically, 60.5 parts methylhexahydrophthalic anhydride and 30 parts methylnadic anhydride.

[0060] Polyol modifier, 8 parts. Specifically, polyethylene glycol modifier.

[0061] Liquid adjuvant, 0.30 parts. Specifically, 0.15 parts of ion scavenger IXEPLAS-B1 and 0.15 parts of phosphite antioxidant TP-80.

[0062] Accelerator, 1.2 parts. Specifically, accelerator PX-4ET (2-ethylhexanoate of DBU).

[0063] A method for preparing a molding compound for HBM high-bandwidth memory chips, such as... Figure 1 As shown, it includes the following steps: Step S1, preparation of component A, includes the following steps: The first step involves accurately weighing liquid epoxy resin, low-viscosity epoxy resin, rubber toughening agent, special additives, and colorant and adding them to a 65°C reactor. Then, start stirring at a speed of 75-80 rpm for 1.5 hours. The second step is to divide the powder filler into three equal parts and add them into the reactor in three batches, with a 10-minute interval between each batch. After the addition is completed, the vacuum is turned on and the vacuum stirring time is controlled to be 1.0 h. The third step is to sample and test the physical properties of component A. After passing the test, the sample is filtered through a 100-mesh filter and then stored for later use. Step S2, preparation of component B, includes the following steps: The first step is to accurately weigh the acid anhydride curing agent, then put it into a 60°C reactor, start stirring at a speed of 70~80 rpm, and mix and preheat the materials for 2.0 hours. The second step involves adding the polyol modifier into the reactor, where the acid anhydride curing agent and the polyol modifier react fully for 1.0 hour. The third step is to cool the reactor temperature to below 40°C, then add the liquid additives and accelerators to the reactor and stir for 0.5 hours. Samples are taken to test the physical properties of component B. After passing the test, the components are filtered through a 300-mesh filter and finally stored for later use. Step S3, Mixing and Curing: Mix component A and component B in a weight ratio of 100:95, and then perform three-stage curing under the following conditions: 80℃ / 1h + 100℃ / 1h + 150℃ / 5h. Once curing is complete, the product is obtained.

[0064] Example 4:

[0065] A molding compound for HBM high-bandwidth memory chips comprises component A and component B. The weight ratio of component A to component B is 100:115.

[0066] Component A comprises raw materials in parts by weight: Liquid epoxy resin, 10.5 parts. Specifically, it consists of 5.5 parts of bisphenol A / F type epoxy resin APALDITE PY 302-2 and 5 parts of alicyclic epoxy resin CY179.

[0067] Low-viscosity epoxy resin, 3.5 parts. Specifically, low-viscosity epoxy resin XY636 (trimethylolpropionic acid glycidyl ether).

[0068] Rubber toughening agent, 15.0 parts. Specifically, rubber toughening agent MX-154 (polyurethane modified rubber).

[0069] Specialty additives, 0.45 parts. These include: defoamer BYK-066N (defoaming polymer and polysiloxane solution), 0.10 parts; dispersant DMAST-2120 (acidic copolymer), 0.12 parts; coupling agent KH-570 (γ-glycidyl etheroxypropyltrimethoxysilane), 0.10 parts; and leveling agent BYK-333 (polyether-modified polydimethylsiloxane), 0.13 parts.

[0070] Color-correcting agent, 0.55 parts. Specifically, color-correcting agent ENSACO 250g.

[0071] Powder filler, 75 parts. The powder filler includes fillers with three particle sizes: 4~6μm, 1~2μm and 0.5μm, specifically 30% powder filler MQS-05C20, 45% powder filler NQ1050 and 25% powder filler Q01X.

[0072] Component B comprises raw materials in parts by weight: Anhydride curing agent, 90.5 parts. Specifically, 75.5 parts methylhexahydrophthalic anhydride and 15 parts polypropylene glycol modified anhydride.

[0073] Polyol modifier, 7 parts. Specifically, it is a polyether diol modifier.

[0074] Liquid additive, 0.20 parts. Specifically, 0.10 parts of ion scavenger IXE-600 and 0.10 parts of antioxidant tris(2,4-di-tert-butylphenyl) phosphite.

[0075] Accelerator, 2.3 parts. Specifically, hexadecyltributylphosphonium bromide.

[0076] A method for preparing a molding compound for HBM high-bandwidth memory chips, such as... Figure 1 As shown, it includes the following steps: Step S1, preparation of component A, includes the following steps: The first step involves accurately weighing liquid epoxy resin, low-viscosity epoxy resin, rubber toughening agent, special additives, and colorant and adding them to a 70°C reactor. Stirring is then started at a speed of 60-65 rpm for 1 hour. The second step is to divide the powder filler into three equal parts and add them into the reactor in three batches, with a 10-minute interval between each batch. After the addition is completed, the vacuum is turned on and the vacuum stirring time is controlled for 2.0 hours. The third step is to sample and test the physical properties of component A. After passing the test, the sample is filtered through a 100-mesh filter and then stored for later use. Step S2, preparation of component B, includes the following steps: The first step is to accurately weigh the acid anhydride curing agent, then put it into a 60°C reactor, start stirring at a speed of 60~65 rpm, and mix and preheat the materials for 1.5 hours. The second step involves adding the polyol modifier into the reactor, where the acid anhydride curing agent and the polyol modifier react fully for 1.0 hour. The third step is to cool the reactor temperature to below 40°C, then add the liquid additives and accelerators to the reactor and stir for 0.5 hours. Samples are taken to test the physical properties of component B. After passing the test, the components are filtered through a 300-mesh filter and finally stored for later use. Step S3, Mixing and Curing: Mix component A and component B in a weight ratio of 100:95, and then perform three-stage curing under the following conditions: 85℃ / 1h + 110℃ / 1h + 135℃ / 3h. Once curing is complete, the product is obtained.

[0077] Product performance testing: Experimental group: Products prepared in Examples 1-4.

[0078] Control group: Kyocera T693 / R4212-2C (Japan).

[0079] Test results: See Table 1.

[0080] Table 1

[0081] in conclusion: 1. The product mixtures in Examples 1 to 4 have low viscosity, all around 10,000 mPa·s, and can be used for more than 72 hours. They have good fluidity, can fill the dead corners and irregular structures of HBM, and have excellent production and processing performance.

[0082] 2. The products in Examples 1 to 4 all have a Tg greater than 160℃, exhibiting good heat resistance. Furthermore, the PCT water absorption rate is less than 0.8%, and the thermal shock test can pass 260 cycles, demonstrating good product reliability.

[0083] 3. The product lines of Examples 1-4 have a coefficient of thermal expansion of less than 26 ppm / ℃ and a Young's modulus of less than 11 GPa, exhibiting good warpage deformation.

[0084] 4. The products in Examples 1-4 have excellent insulation properties, meeting the electrical performance requirements of HBM high-bandwidth memory chips.

[0085] 5. The product of Example 1 has comprehensive performance parameters and a high cost-performance ratio; the product of Example 2 has excellent application performance, with the highest Tg and insulation properties; the product of Example 3 has the best performance in terms of warpage deformation and can be used in scenarios with strict requirements for product deformation; the product of Example 4 has the highest toughness, excellent machinability, and the best performance in thermal shock tests. When applying the products, you can make further selections based on their respective characteristics.

[0086] 6. As a control, this invention selected a commercially available epoxy molding compound for HBM high-bandwidth memory chip packaging, namely Kyocera's T693 / R4212-2C, and tested its physical properties. The results are detailed in Table 1. The product provided by this invention has a better usable time, a larger process window, and a longer service life, meeting the needs of continuous production in packaging plants. Shear strength, Young's modulus, glass transition temperature, coefficient of linear expansion, thermal shock testing, and insulation performance all meet or even exceed those of the control group.

[0087] In summary, this invention comprises component A, consisting of liquid epoxy resin, low-viscosity epoxy resin, rubber-based toughening agent, special additives, and powder filler; and component B, consisting of acid anhydride curing agent, polyol modifier, liquid additives, and accelerators. Through the scientific formulation of raw materials and the assistance of a reasonable processing method, a molding compound for HBM high-bandwidth memory chips is produced. This compound exhibits excellent manufacturing and processing performance and outstanding application performance, meeting the requirements of HBM high-bandwidth memory chips. It is an effective alternative to foreign competing products and has broad application prospects.

[0088] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A molding compound for HBM high-bandwidth memory chips, characterized in that, Includes component A and component B: Component A comprises raw materials in parts by weight: Liquid epoxy resin, 3.9~26.2 parts; Low-viscosity epoxy resin, 3-5 parts; Rubber toughening agent, 10-15 parts; Special additives, 0.3~0.5 parts; Color-matching agent, 0.5~0.6 parts; Powder filler, 60-75 parts; Component B comprises raw materials in parts by weight: Anhydride curing agent, 89.2~93.6 parts; Polyol modifier, 5-8 parts; Liquid additive, 0.2~0.3 parts; Accelerator, 1.2~2.5 parts.

2. The molding compound for HBM high-bandwidth memory chips according to claim 1, characterized in that: The weight ratio of component A to component B ranges from 100:80 to 120.

3. The molding compound for HBM high-bandwidth memory chips according to claim 1, characterized in that: The liquid epoxy resin includes one or two of the following: bisphenol F type epoxy resin, bisphenol A / F type epoxy resin, bisphenol A type epoxy resin, alicyclic epoxy resin, and o-cresol formaldehyde epoxy resin.

4. The molding compound for HBM high-bandwidth memory chips according to claim 1, characterized in that: The low-viscosity epoxy resin includes one or two of butylene glycol glycidyl ether, hexanediol glycidyl ether, polypropylene glycol glycidyl ether, and trimethylolpropane glycidyl ether.

5. The molding compound for HBM high-bandwidth memory chips according to claim 1, characterized in that: The rubber toughening agent includes one or two of liquid CTBN rubber, polyurethane modified rubber, and core-shell rubber.

6. The molding compound for HBM high-bandwidth memory chips according to claim 1, characterized in that: The special additives include defoamers, dispersants, coupling agents, and leveling agents; The defoamer is a solution of defoaming polymer and polysiloxane; The dispersant is a polyphosphate ester; The coupling agent is γ-glycidoxypropyltrimethoxysilane; The leveling agent is polyether-modified polydimethylsiloxane; The colorant is carbon black; The powder filler is silica and alumina, wherein the silica is spherical silica and the alumina is spherical alumina; the powder filler includes three particle sizes: 4~6μm, 1~2μm and 0.5μm, and the proportions of the three particle sizes are 20~30%, 45~65% and 15~5%, respectively.

7. The molding compound for HBM high-bandwidth memory chips according to claim 1, characterized in that: The anhydride curing agent includes one or two of methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, SMA anhydride, methylnadic anhydride, and polypropylene glycol modified anhydride.

8. The molding compound for HBM high-bandwidth memory chips according to claim 1, characterized in that: The polyol modifier is a polyol with a functionality of 2-3, including polyether diol, polycaprolactone diol or triol, butanediol, hexanediol, and polyethylene glycol.

9. The molding compound for HBM high-bandwidth memory chips according to claim 1, characterized in that: The liquid additives include ion scavengers and antioxidants; The ion trapping agent is a dual ion exchange trapping agent, specifically one of IXEPLAS-A1, IXEPLAS-B1, or IXE-600. The antioxidant is a phosphite antioxidant, specifically TP-10H, 317, TP-8, or tris(2,4-di-tert-butylphenyl) phosphite. The accelerator is one of the following: DBU modified salt, C16 tertiary amine, chelation accelerator, dimethyl phosphate salt, and modified imidazole accelerator.

10. A method for preparing a molding compound for HBM high-bandwidth memory chips as described in any one of claims 1 to 9, characterized in that, Includes the following steps: Step S1, preparation of component A, includes the following steps: The first step involves accurately weighing liquid epoxy resin, low-viscosity epoxy resin, rubber toughening agent, special additives, and colorant and adding them to a reaction vessel at 50-70°C. Then, start stirring at a speed of 60-80 rpm for 1-1.5 hours. The second step is to divide the powder filler into three equal parts and add them into the reactor in three separate batches, with a 10-minute interval between each batch. After the addition is completed, the vacuum is turned on and the vacuum stirring time is controlled to be 1-2 hours. The third step is to sample and test the physical properties of component A. After passing the test, the sample is filtered through a 100-mesh filter and then stored for later use. Step S2, preparation of component B, includes the following steps: The first step is to accurately weigh the acid anhydride curing agent, then put it into a reaction vessel at 50~60℃, start stirring, and set the speed to 60~80 rpm / min. The material is mixed and preheated for 0.5 hours. The second step involves adding the polyol modifier into the reactor, where the acid anhydride curing agent and the polyol modifier react fully for 1-2 hours. The third step is to cool the reactor temperature to below 40°C, then add the liquid additives and accelerators to the reactor and stir for 0.5 hours. Samples are taken to test the physical properties of component B. After passing the test, the components are filtered through a 300-mesh filter and finally stored for later use. Step S3, Mix and cure: Mix component A and component B in a weight ratio of 100:80~120, and use after curing.

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