Method, device and equipment for obtaining critical energy release rate of interface and medium

Abstract

The application discloses an acquisition method, device and equipment of critical energy release rate of interface and a medium, and comprises the following steps: generating a medium-metal interface sample based on a preset process technology; performing a shear test on the medium-metal interface sample to obtain shear force change data and a shear interface optical image of the medium-metal interface sample; determining a maximum shear force value and a shear area of the medium-metal interface sample based on the shear force change data and the shear interface optical image; and determining the critical energy release rate of the medium-metal interface sample based on the maximum shear force value and the shear area. The interface sample prepared in accordance with the actual packaging process conditions is subjected to the shear test, the state of the interface in the actual process conditions is simulated to the greatest extent, the critical energy release rate is more accurately measured, the critical energy release rate obtained finally can more reflect the real performance of the interface in the actual situation, and the result deviation caused by the difference between the test sample and the actual situation is avoided.

Description

Technical Field

[0001] This invention relates to the field of fracture mechanics testing technology, and in particular to a method, apparatus, equipment and medium for obtaining the critical energy release rate of an interface. Background Technology

[0002] In related technologies, the critical energy release rate of interface cracks is usually obtained through indirect testing with a single specimen. This method calculates the critical energy release rate of interface cracks based on the load-bearing capacity of the specimen, according to a model. However, the basic assumptions of the model are that the interface between the specimen and the actual packaging process differs significantly, making it difficult to directly apply the test results to actual product design and reliability assessment. Summary of the Invention

[0003] This invention provides a method, apparatus, electronic device, and medium for obtaining the critical energy release rate of an interface, in order to solve the technical problem that the interface between the sample and the actual packaging process differs greatly in the basic assumptions of the model, making it difficult to directly apply the test results to actual product design and reliability assessment.

[0004] Firstly, a method for obtaining the critical energy release rate of an interface is provided, including:

[0005] Based on the preset process technology, a medium-metal interface sample is generated;

[0006] Shear tests were conducted on dielectric-metal interface samples to obtain shear force variation data and optical images of the shear interface.

[0007] Based on shear force variation data and optical images of the shear interface, the maximum shear force value and shear area of ​​the medium-metal interface sample are determined.

[0008] The critical energy release rate of the medium-metal interface sample was determined based on the maximum shear force and shear area.

[0009] Secondly, a device for obtaining the critical energy release rate of an interface is provided, comprising:

[0010] The generation module is used to generate medium-metal interface samples based on a preset process technology;

[0011] The acquisition module is used to perform shear tests on dielectric-metal interface samples to acquire shear force change data and optical images of the shear interface.

[0012] The first determining module is used to determine the maximum shear force value and shear area of ​​the medium-metal interface sample based on shear force variation data and optical images of the shear interface.

[0013] The second determination module is used to determine the critical energy release rate of the medium-metal interface sample based on the maximum shear force value and shear area.

[0014] Thirdly, an electronic device is provided, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the steps of obtaining the critical energy release rate of the aforementioned interface are implemented when the processor executes the computer program.

[0015] Fourthly, a computer-readable storage medium is provided, which stores a computer program, and when the computer program is executed by a processor, implements the steps of the method for obtaining the critical energy release rate of the above-mentioned interface.

[0016] In the above-mentioned scheme for obtaining the critical energy release rate of the interface, the interface sample with the same packaging process conditions as the actual interface is prepared and shear test is performed to simulate the state of the interface under the actual process conditions to the greatest extent, so as to measure the critical energy release rate more accurately. This makes the final critical energy release rate more reflective of the actual performance of the interface under actual conditions and avoids the deviation of the results caused by the difference between the test sample and the actual situation. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a flowchart illustrating a method for obtaining the critical energy release rate of an interface in one embodiment of the present invention.

[0019] Figure 2 This is a schematic diagram of the sample preparation process for a medium-metal interface in one embodiment of the present invention;

[0020] Figure 3 This is a top view of a sample structure of a dielectric-metal interface in one embodiment of the present invention;

[0021] Figure 4 This is a front view of a sample structure of a medium-metal interface in one embodiment of the present invention;

[0022] Figure 5 This is a schematic diagram of the shear force-displacement relationship curve in one embodiment of the present invention;

[0023] Figure 6 This is a schematic diagram of an optical image of a shearing interface in one embodiment of the present invention;

[0024] Figure 7 This is a schematic diagram of the optical image of the target interface in one embodiment of the present invention;

[0025] Figure 8 This is a schematic diagram of a binary image in one embodiment of the present invention;

[0026] Figure 9 This is a schematic diagram of the structure of a device for obtaining the critical energy release rate of an interface in one embodiment of the present invention. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. It should be understood that the accompanying drawings in the present invention are only for illustrative and descriptive purposes and are not intended to limit the scope of protection of the present invention.

[0028] Furthermore, it should be understood that the schematic drawings are not drawn to scale. The flowcharts used in this invention illustrate operations implemented according to some embodiments of the invention. It should be understood that the operations in the flowcharts may not be implemented in sequence, and steps without logical contextual relationships may be reversed or performed simultaneously. Moreover, those skilled in the art, guided by the content of this invention, may add one or more other operations to the flowcharts, or remove one or more operations from the flowcharts.

[0029] Furthermore, the embodiments described herein are merely some, not all, of the embodiments of the invention. The components of the embodiments of the invention described and illustrated herein can typically be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0030] It should be noted that the term "comprising" will be used in the embodiments of the present invention to indicate the presence of a feature subsequently declared, but does not exclude the addition of other features. It should also be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0031] The following is a detailed description of this case, in conjunction with the relevant accompanying drawings in the instruction manual.

[0032] In the embodiments described in this specification, dielectric-metal interfaces are widely present between various interconnect structures in modern microelectronic packaging structures. These interfaces are susceptible to stress concentration, thermal expansion coefficient mismatch, and other factors during manufacturing, leading to crack initiation and propagation, and ultimately, failure. The critical energy release rate, as an important parameter for measuring the interface's resistance to fracture, is crucial for predicting and preventing such failures.

[0033] Currently, traditional methods for obtaining critical energy release rates have significant limitations. Specifically, the traditional sample preparation process differs greatly from the interface formation conditions in the actual packaging process, making it difficult to directly apply experimental results to actual product design and reliability assessment. To address these issues, this application proposes a method for obtaining the critical energy release rate of an interface. By preparing an interface sample with conditions consistent with the actual packaging process and conducting a shear test, the method simulates the interface state under actual process conditions to the greatest extent possible, thereby more accurately measuring the critical energy release rate. This ensures that the final critical energy release rate better reflects the true performance of the interface under real-world conditions, avoiding deviations caused by differences between the test sample and the actual situation.

[0034] Please see Figure 1 This embodiment provides a method for obtaining the critical energy release rate of an interface, the method specifically including the following steps:

[0035] S10: Generate a dielectric-metal interface sample based on a preset process.

[0036] In this step, the preset process technology is a process technology pre-defined based on the actual packaging process. By simulating the actual packaging process conditions, the dielectric-metal interface sample is prepared to ensure that the interface sample preparation process is consistent with the actual packaging process. This ensures that the interface stress state of the sample matches the actual situation, so that the critical energy release rate measured later can accurately reflect the ability to resist crack propagation under the actual process. This avoids deviations in measurement results due to differences in stress state, and improves the accuracy and reliability of the test results.

[0037] In one embodiment of this application, a specific method for preparing a dielectric-metal interface sample is provided. In S10, that is, based on a preset process, the dielectric-metal interface sample is generated, which specifically includes the following steps S11-S12:

[0038] S11: Obtain multiple process steps of the preset process and multiple preparation materials required to prepare the dielectric-metal interface sample.

[0039] S12: Process multiple materials according to multiple process steps to generate a medium-metal interface sample.

[0040] For steps S11-S12, multiple process steps of the actual packaging process are obtained as process steps for preparing the interface sample. At the same time, the preparation materials required for this sample preparation are prepared based on the actual packaging process. Then, the prepared preparation materials are processed according to multiple process steps simulating the actual packaging process, and finally, a dielectric-metal interface sample consistent with the actual packaging process is obtained.

[0041] Optionally, such as Figure 2 The diagram shows a schematic of the process flow for preparing a dielectric-metal interface sample. The process steps include: substrate treatment, metal layer preparation, photoresist layer coating, photolithography exposure, development treatment, and dicing treatment. The preparation materials include: wafer, metal plating solution, photoresist, and developer.

[0042] In one embodiment of this application, a specific method for preparing a dielectric-metal interface sample is provided. In S12, multiple preparation materials are processed according to multiple process steps to generate a dielectric-metal interface sample, specifically including the following steps S121-S126:

[0043] S121: Substrate treatment: Using the wafer as a substrate layer, the wafer is cleaned and dried.

[0044] S122: Metal layer preparation: Based on metal electrolyte, a metal layer is formed on the substrate layer by electroplating.

[0045] S123: Photoresist layer coating: Based on photoresist, a photoresist layer is formed on the metal layer using a spin coating method;

[0046] S124: Photolithography exposure: Based on a photolithography mask with a preset pattern, the target medium is generated on the photoresist layer;

[0047] S125: Development process: The exposed substrate is placed in the developing solution for development.

[0048] S126: Cutting process: Based on preset size parameters, the substrate layer is cut to generate a medium-metal interface sample.

[0049] For steps S121-S126, taking the preparation of a polyimide (PI, dielectric)-copper (Cu, metal) interface sample as an example, the preparation process typically includes the following steps:

[0050] Step (1): Substrate pretreatment: Using a silicon wafer as the substrate, the silicon wafer is placed in a cleaning device (such as an ultrasonic cleaner) for 10-15 minutes to remove contaminants from the crystal surface. Subsequently, the silicon wafer is dried using a rotary rinse-drying device to ensure thorough drying and guarantee the quality of subsequent coating.

[0051] Step (2): Metal layer preparation: Using electroplating, the silicon wafer is used as the cathode, and the copper anode is placed in the copper sulfate electroplating solution. A certain current density is applied for electroplating, and the electroplating time is controlled to form a uniform Cu film on the wafer.

[0052] Optionally, to avoid insufficient adhesion between the electroplated metal and the substrate, circular holes or other patterns can be pre-drilled in the metal layer to enhance mechanical stability. For example... Figure 3 The figure shows a top view of the dielectric-metal interface sample structure. In the figure, multiple circular holes are formed on the Cu thin film layer according to the preset pattern and the preset number of patterns, which effectively enhances mechanical stability.

[0053] Step (3): Photoresist coating: Place the silicon wafer with the deposited Cu layer on a spin coater, add an appropriate amount of photoresist, and apply a photoresist layer on the metal layer by spin coating based on the preset spin coating parameters.

[0054] Optionally, spin coating parameters (such as rotation speed of 1000rpm-5000rpm and time of 30-60 seconds) can be set in advance according to the test requirements to ensure uniform coating thickness.

[0055] Furthermore, during the spin coating process, centrifugal force causes excess photoresist to be ejected, leaving a smooth photoresist layer. Subsequently, the silicon wafer coated with the photoresist layer is placed in an oven, and the time and temperature are set (e.g., soft baking at 90℃-110℃ for 10-30 minutes). Heating causes some of the solvent in the photoresist layer to evaporate, thereby forming a stable coating.

[0056] Step (4): Photolithography exposure: Align the photomask with the preset pattern with the silicon wafer coated with photoresist, and use a photolithography machine or exposure machine to transfer the preset pattern on the photomask to the photoresist layer using ultraviolet light or other radiation sources to form the target pattern, which is the target medium.

[0057] Optionally, after exposure, a baking process can be performed to reduce standing wave effects and improve image resolution.

[0058] Step (5): Development process: Place the exposed wafer into the developer solution, so that the developer solution chemically decomposes the photoresist in the unexposed area, exposing the underlying Cu layer and forming the desired target pattern.

[0059] Optionally, depending on the concentration of the developer and the type of photoresist, the development range can be set from tens of seconds to several minutes.

[0060] Furthermore, after development, the silicon wafer is rinsed with deionized water and then hard-baked under fixed time and high temperature conditions to enhance the adhesion between the photoresist and the Cu layer, ensuring the stability of subsequent processing.

[0061] Step (6): Cutting process: Based on preset size parameters, the wafer substrate is cut along the cutting path to generate PI-Cu interface samples with specific size and shape.

[0062] Optionally, based on the sample size requirements of the shearing equipment's clamps, the length and width of the sample are limited to avoid discrepancies between the sample length and width and the clamp dimensions. Specifically, the length of the interface sample is set to be less than or equal to 2 mm, and the width is set to be less than or equal to 2 mm. Furthermore, the descent accuracy of the shearing equipment's pusher is limited. By controlling the thickness of the medium layer, it is ensured that the pusher of the shearing test equipment can reach the medium layer without contacting the substrate material. Specifically, the dimensions of the target medium are set to a length of 30 micrometers, a width of 30 micrometers, and a thickness of 10 mm. Figure 4 The image shows a front view of the dielectric-metal interface sample structure. The final dielectric-metal interface sample is formed by adjusting the size of the generated interface.

[0063] By using the above method, dielectric-metal interface samples are prepared according to multiple process steps to ensure that the interface sample preparation process is consistent with the actual packaging process, thereby enabling the critical energy release rate obtained subsequently to accurately reflect the interface fracture characteristics under actual process conditions.

[0064] S20: Conduct shear tests on the medium-metal interface sample to obtain shear force variation data and optical images of the shear interface.

[0065] In this step, after preparing a dielectric-metal interface sample consistent with the actual packaging process, a shear test is performed on it. This involves applying a shear force to the target dielectric on the dielectric-metal interface sample, capturing and recording the change in shear force with displacement throughout the shear test. Furthermore, after the shear test is completed, an optical image of the sheared interface after interface failure is acquired.

[0066] In one embodiment of this application, a specific scheme for obtaining experimental data is provided. In S20, multiple preparation materials are processed according to multiple process steps to generate a dielectric-metal interface sample, specifically including the following steps S21-S23:

[0067] S21: Based on a preset shear rate, push the target medium on the medium-metal interface sample to apply shear force to the medium-metal interface sample; obtain the pushing distance, and stop pushing the target medium when the pushing distance reaches a preset pushing distance threshold.

[0068] S22: Obtain shear force change data of the medium-metal interface sample during the shear test.

[0069] S23: After shearing is completed, acquire an optical image of the shearing interface of the medium-metal interface sample.

[0070] For steps S21-S23, the dielectric-metal interface sample is mounted in the fixture of the shear testing equipment, the shearing equipment is started, and a shear force is applied to the dielectric-metal interface sample according to a preset shear rate. During the test, the changes in shear force and pushing distance are monitored and recorded in real time. When the pushing distance reaches a threshold, the shear test is stopped. Furthermore, using tools such as an optical microscope, an optical image of the sheared interface is captured to accurately and clearly obtain the actual morphology of the sheared material, providing support for subsequent data analysis.

[0071] Optionally, the preset push distance threshold can be set according to the length of the medium. In a shear test, pushing the target medium along either side of the sample is expected to remove the target medium from the sample, although a portion of the target medium will typically remain on the substrate. Therefore, by setting a preset push distance threshold based on the length of the target medium and the sample length, this threshold is expected to be able to remove the target medium from the substrate.

[0072] S30: Based on shear force variation data and optical images of the shear interface, determine the maximum shear force value and shear area of ​​the medium-metal interface sample.

[0073] In this step, the maximum shear force value refers to the maximum external force that the sample can withstand during the shearing process applied to the interface sample. The maximum shear force value is a key indicator for measuring the bonding strength of the medium-metal interface. When the applied shear force reaches this value, the sample will begin to exhibit obvious plastic deformation, fracture, or interface separation failure phenomena. Furthermore, the shear area is the effective area of ​​the sample that actually participates in the shearing process. During the application of shear force to the medium-metal interface sample, not the entire volume of the sample bears and transmits the shear force; only a portion of the area truly resists the shearing action, and this portion is the effective area, i.e., the shear area. By identifying and extracting the maximum shear force from the shear force variation data, and simultaneously determining the shear area based on the optical image of the sheared interface after shearing, the actual shear strength of the interface sample can be effectively calculated, thereby evaluating the shear performance of the interface structure.

[0074] In one embodiment of this application, a specific scheme for obtaining key shear characteristic parameters is provided. In S30, that is, based on shear force change data and optical images of the shear interface, the maximum shear force value and shear area of ​​the medium-metal interface sample are determined, specifically including the following steps S31-S35:

[0075] S31: Obtain the maximum shear force value from the shear force variation data.

[0076] In this step, the collected data on shear force versus displacement is imported into suitable data analysis software (such as Origin) to plot the shear force-time curve, such as... Figure 5 As shown, this is a schematic diagram of the shear force-time relationship curve. The stress peak value can be identified and extracted from the relationship curve, which is the maximum shear force value, and serves as a key parameter characterizing the interface strength.

[0077] S32: Generate the target interface optical image based on the preset region and the cut interface optical image.

[0078] S33: Convert the optical image of the target interface into a binary image.

[0079] S34: Get the number of pixels of the target identifier in the binary image.

[0080] S35: Determine the shearing area based on the number of pixels and the preset pixel area.

[0081] For steps S32-S35, the preset area is the target medium area. The interface optical image after the shearing test is cropped according to the target medium area to extract the target interface optical image of the sheared area. For example... Figure 6 The image shown is a schematic diagram of the optical image of the sheared interface after shearing. Figure 7 The image shown is a schematic diagram of the optical image of the target interface after the interface has been captured. Subsequently, the optical image of the target interface is converted into a binary image, as shown below. Figure 8 The diagram shows the transformed binary image. In this binary image, each element of the two-dimensional matrix is ​​represented by 0 or 1, where 0 represents the background or undone material region, and 1 represents the cut-off material region. The pixel identifiers of the cut-off material regions are used as target identifiers. In the two-dimensional image, the number of pixels corresponding to the target identifiers is counted (i.e., the number of 1s in the two-dimensional matrix). The total area of ​​cut-off material (i.e., the cut-off area) is calculated by multiplying the number of pixels by the actual area represented by each pixel.

[0082] Optionally, the preset pixel area represented by each pixel can be set according to the aspect ratio of the image.

[0083] By utilizing image processing techniques described above to convert optical images into binary images, the areas of material that have been cut off can be accurately identified. Furthermore, by counting the number of pixels in these areas and combining this with the actual area represented by each pixel, the total area of ​​this material can be precisely calculated, reflecting the true extent of material loss and ensuring the accuracy of the shearing data.

[0084] S40: Determine the critical energy release rate of the medium-metal interface sample based on the maximum shear force and shear area.

[0085] In this step, the critical energy release rate reflects the interface's ability to resist crack propagation. By combining the maximum shear force and shear area obtained from experiments, the critical energy release rate is calculated analytically, accurately reflecting the interfacial fracture characteristics under actual process conditions.

[0086] In one embodiment of this application, a specific scheme for obtaining key shear characteristic parameters is provided. In S40, that is, based on shear force change data and optical images of the shear interface, the maximum shear force value and shear area of ​​the medium-metal interface sample are determined, specifically including the following steps S41-S42:

[0087] S41: Obtain the thickness value of the target medium in the medium-metal interface sample.

[0088] S42: Determine the critical energy release rate of the medium-metal interface sample based on the target shear force, shear area, and thickness.

[0089] For steps S41-S42, the thickness of the dielectric layer in the dielectric-metal interface sample is measured, and the critical energy release rate is calculated by combining the target shear force value and shear area with the formula for calculating the critical energy release rate. The critical energy release rate of the dielectric-metal interface sample is then solved by analytical calculation method.

[0090] Specifically, the formula for calculating the critical energy release rate is:

[0091]

[0092] In the formula, the above G IIC G is the critical energy release rate. IIC The unit is mJ / mm 2 ; α above is the interfacial crack coefficient; F above is the maximum shear force value, F unit is MPa; A above is the shear area, A unit is mm. 2 h1 is the thickness of the dielectric layer, and h1 is in mm; E1 is the Young's modulus of the dielectric, and E1 is in MPa.

[0093] It should be noted that α is a parameter related to crack geometry, reflecting the stress field distribution characteristics near the crack tip. The value of α depends on the type of crack (e.g., surface crack, embedded crack, etc.), crack size, crack orientation, and specimen geometry; α is typically taken as 0.5.

[0094] As can be seen, in the above scheme, by preparing interface samples consistent with the actual packaging process conditions and conducting shear tests, the state of the interface under the actual process conditions is simulated to the greatest extent, thereby measuring the critical energy release rate more accurately. This makes the final critical energy release rate more reflective of the true performance of the interface under actual conditions and avoids the deviation of results caused by the difference between the test sample and the actual situation.

[0095] In one embodiment, a device for obtaining the critical energy release rate of an interface is provided, which corresponds one-to-one with the method for obtaining the critical energy release rate of an interface in the above embodiments. For example... Figure 9 As shown, the device 100 for obtaining the critical energy release rate of the interface includes: a generation module 101, an acquisition module 102, a first determination module 103, and a second determination module 104. Detailed descriptions of each functional module are as follows:

[0096] The generation module 101 is used to generate a dielectric-metal interface sample based on a preset process technology.

[0097] The acquisition module 102 is used to perform shear tests on the medium-metal interface sample and acquire shear force change data and shear interface optical images of the medium-metal interface sample.

[0098] The first determining module 103 is used to determine the maximum shear force value and shear area of ​​the medium-metal interface sample based on shear force change data and optical images of the shear interface.

[0099] The second determining module 104 is used to determine the critical energy release rate of the medium-metal interface sample based on the maximum shear force value and shear area.

[0100] In one embodiment, the generation module 101 is specifically used for:

[0101] Obtain multiple process steps of the preset process, as well as multiple preparation materials required to prepare dielectric-metal interface samples;

[0102] Multiple materials are processed through several process steps to generate a dielectric-metal interface sample.

[0103] The process includes several steps: substrate treatment, metal layer preparation, photoresist layer coating, photolithography exposure, development and dicing; and several materials used in the preparation include wafers, metal plating solutions, photoresist and developing solutions.

[0104] In one embodiment, the generation module 101 is further configured to:

[0105] Substrate preparation: The wafer is used as the substrate layer, and the wafer is cleaned and dried.

[0106] Metal layer preparation: Based on metal electrolyte, a metal layer is formed on the substrate layer by electroplating.

[0107] Photoresist layer coating: Based on photoresist, a photoresist layer is formed on the metal layer using a spin coating method;

[0108] Photolithography: Based on a pre-defined patterned photolithographic mask, the target medium is generated on the photoresist layer;

[0109] Development process: The exposed substrate is immersed in a developing solution for development.

[0110] Cutting process: Based on preset size parameters, the substrate layer is cut to generate a medium-metal interface sample.

[0111] In one embodiment, the preset size parameters are: the length of the substrate layer is less than or equal to 2 mm and the width is less than or equal to 2 mm; the target medium has a length of 30 micrometers, a width of 30 micrometers, and a thickness of 10 mm.

[0112] In one embodiment, the acquisition module 102 is specifically used for:

[0113] Based on a preset shear rate, the target medium on the medium-metal interface sample is pushed to apply shear force to the medium-metal interface sample; the pushing distance is obtained, and the pushing of the target medium is stopped when the pushing distance reaches a preset pushing distance threshold;

[0114] Obtain shear force variation data of medium-metal interface samples during shear tests;

[0115] After shearing is completed, acquire an optical image of the shearing interface of the medium-metal interface sample.

[0116] In one embodiment, the first determining module 103 is specifically used for:

[0117] Obtain the maximum shear force value from the shear force variation data;

[0118] Based on the preset region and the optical image of the shearing interface, generate the optical image of the target interface;

[0119] Convert the optical image of the target interface into a binary image;

[0120] Obtain the number of pixels representing the target in the binary image, where the target is the pixel identifier corresponding to the cut-out material region in the two-dimensional image;

[0121] The cut area is determined based on the number of pixels and the preset pixel area.

[0122] In one embodiment, the second determining module 104 is specifically used for:

[0123] Obtain the thickness value of the target medium in the medium-metal interface sample;

[0124] Based on the target shear force, shear area, and thickness, the critical energy release rate of the medium-metal interface sample is determined.

[0125] This invention provides a device for obtaining the critical energy release rate of an interface. By preparing an interface sample consistent with the actual packaging process conditions and conducting a shear test, the device simulates the state of the interface under actual process conditions to the greatest extent, thereby measuring the critical energy release rate more accurately. This makes the final critical energy release rate more reflective of the true performance of the interface under actual conditions and avoids deviations in results caused by differences between the test sample and the actual situation.

[0126] Specific limitations regarding the device for obtaining the critical energy release rate of the interface can be found in the limitations on the method for obtaining the critical energy release rate of the interface described above, and will not be repeated here. Each module in the aforementioned device for obtaining the critical energy release rate of the interface can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in hardware or independently of the processor in the electronic device, or stored in software in the memory of the electronic device, so that the processor can call and execute the operations corresponding to each module.

[0127] In one embodiment, an electronic device is provided, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to perform the following steps:

[0128] Based on the preset process technology, a medium-metal interface sample is generated;

[0129] Shear tests were conducted on dielectric-metal interface samples to obtain shear force variation data and optical images of the shear interface.

[0130] Based on shear force variation data and optical images of the shear interface, the maximum shear force value and shear area of ​​the medium-metal interface sample are determined.

[0131] The critical energy release rate of the medium-metal interface sample was determined based on the maximum shear force and shear area.

[0132] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0133] Based on the preset process technology, a medium-metal interface sample is generated;

[0134] Shear tests were conducted on dielectric-metal interface samples to obtain shear force variation data and optical images of the shear interface.

[0135] Based on shear force variation data and optical images of the shear interface, the maximum shear force value and shear area of ​​the medium-metal interface sample are determined.

[0136] The critical energy release rate of the medium-metal interface sample was determined based on the maximum shear force and shear area.

[0137] It should be noted that the functions or steps that can be implemented by the computer-readable storage medium or electronic device described above can be referred to the relevant descriptions on the server side and client side in the foregoing method embodiments. To avoid repetition, they will not be described one by one here.

[0138] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), Rambus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0139] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is used as an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above.

[0140] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A method for obtaining the critical energy release rate of an interface, characterized in that, include: Based on the preset process technology, a medium-metal interface sample is generated; A shear test was performed on the medium-metal interface sample to obtain shear force variation data and optical images of the shear interface. Based on the shear force variation data and the optical image of the shear interface, the maximum shear force value and shear area of ​​the medium-metal interface sample are determined. Based on the maximum shear force and the shear area, the critical energy release rate of the medium-metal interface sample is determined.

2. The method according to claim 1, characterized in that, The step of generating a dielectric-metal interface sample based on a preset process specifically includes: The process involves obtaining multiple process steps of a preset process and multiple preparation materials required to prepare the dielectric-metal interface sample. The plurality of materials are processed according to the plurality of process steps to generate the dielectric-metal interface sample; The multiple process steps include: substrate treatment, metal layer preparation, photoresist layer coating, photolithography exposure, development treatment, and dicing treatment; the multiple preparation materials include wafers, metal electroplating solutions, photoresist, and developing solutions.

3. The method according to claim 2, characterized in that, The step of processing the multiple materials according to the multiple process steps to generate the dielectric-metal interface sample specifically includes: Substrate preparation: The wafer is used as the substrate layer, and the wafer is cleaned and dried. Metal layer preparation: Based on metal electrolyte, a metal layer is formed on the substrate layer by electroplating. Photoresist layer coating: Based on photoresist, a photoresist layer is formed on the metal layer using a spin coating method; Photolithography: Based on a pre-defined patterned photolithographic mask, the target medium is generated on the photoresist layer; Development process: The exposed substrate is immersed in a developing solution for development. Cutting process: Based on preset size parameters, the substrate layer is cut to generate a medium-metal interface sample.

4. The method according to claim 2 or 3, characterized in that, The preset size parameters are: the length of the substrate layer is less than or equal to 2 mm and the width is less than or equal to 2 mm; the target medium has a length of 30 micrometers, a width of 30 micrometers, and a thickness of 10 mm.

5. The method according to claim 1, characterized in that, The step of performing a shear test on the dielectric-metal interface sample to obtain shear force change data and optical images of the shear interface specifically includes: Based on a preset shear rate, the target medium on the medium-metal interface sample is pushed to apply shear force to the medium-metal interface sample; the pushing distance is obtained, and when the pushing distance reaches a preset pushing distance threshold, the pushing of the target medium is stopped; Obtain the shear force change data of the medium-metal interface sample during the shear test; After shearing is completed, an optical image of the shearing interface of the medium-metal interface sample is obtained.

6. The method according to claim 5, characterized in that, The step of determining the maximum shear force value and shear area of ​​the medium-metal interface sample based on the shear force variation data and the optical image of the shear interface specifically includes: Obtain the maximum shear force value from the shear force variation data; Based on the preset region and the optical image of the shearing interface, the optical image of the target interface is generated; Convert the optical image of the target interface into a binary image; Obtain the number of pixels representing the target in the binary image, wherein the target is the pixel identifier corresponding to the cut-out material region in the two-dimensional image; The shearing area is determined based on the number of pixels and the preset pixel area.

7. The method according to claim 1, characterized in that, The step of determining the critical energy release rate of the medium-metal interface sample based on the maximum shear force value and the shear area specifically includes: Obtain the thickness value of the target medium in the medium-metal interface sample; Based on the target shear force value, the shear area, and the thickness value, the critical capacity release rate of the medium-metal interface sample is determined.

8. A device for obtaining the critical energy release rate of an interface, characterized in that, include: The generation module is used to generate medium-metal interface samples based on a preset process technology; The acquisition module is used to perform a shear test on the medium-metal interface sample and acquire shear force change data and shear interface optical images of the medium-metal interface sample. The first determining module is used to determine the maximum shear force value and shear area of ​​the medium-metal interface sample based on the shear force change data and the shear interface optical image. The second determining module is used to determine the critical energy release rate of the medium-metal interface sample based on the maximum shear force value and the shear area.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the method for obtaining the critical energy release rate of the interface as described in any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method for obtaining the critical energy release rate of the interface as described in any one of claims 1 to 7.

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