Formation wettability evaluation method based on deficiency curvature and three-phase intersection line number

Abstract

The application provides a formation wettability evaluation method based on a deficiency curvature and a number of three-phase intersection lines, comprising the following steps: obtaining in-situ environmental data and microscopic image data of a carbon dioxide storage reservoir; inputting the in-situ environmental data and the microscopic image data into a parameter extraction model to obtain topological interface characteristic parameters; the topological interface characteristic parameters comprise at least one of the following: a dynamic wetting angle, a pore deficiency curvature and a number of three-phase intersection lines per unit volume; obtaining a comprehensive wettability evaluation index based on the topological interface characteristic parameters; and obtaining a wettability evaluation result of the reservoir according to the comprehensive wettability evaluation index. Through the technical scheme, the accuracy of wettability evaluation of the carbon dioxide storage reservoir can be improved.

Description

Technical Field

[0001] This application relates to the field of carbon dioxide geological storage technology, and in particular to a method, apparatus, equipment and storage medium for evaluating formation wettability based on the deficient curvature and the number of three-phase intersection lines. Background Technology

[0002] The wettability of carbon dioxide storage reservoirs, such as deep saline aquifers, tight sandstones, and carbonate rocks, is a key petrophysical parameter controlling the effectiveness of supercritical carbon dioxide storage. It directly determines the two-phase distribution of carbon dioxide and formation brine, pore retention, capillary blockage, and long-term migration patterns, serving as the core basis for reservoir screening, storage scheme design, and leakage risk management. Existing reservoir wettability evaluation technologies use a single wetting angle as the core indicator, qualitatively classifying wettability solely by hydrophilic, hydrophobic, or neutral wettability. This single evaluation dimension fails to reflect the coupled influence of pore structure and interface behavior, resulting in significant deviations between the evaluation results and the actual reservoir wettability. Summary of the Invention

[0003] This application aims to at least partially address one of the technical problems in the related art.

[0004] In a first aspect, this application proposes a formation wettability evaluation method based on the depletion curvature and the number of three-phase intersections. The method includes: acquiring in-situ environmental data and microscopic image data of a carbon dioxide-sealed reservoir; inputting the in-situ environmental data and the microscopic image data into a parameter extraction model to obtain topological interface feature parameters; the topological interface feature parameters include at least one of the following: dynamic wetting angle, pore depletion curvature, and the number of three-phase intersections per unit volume; obtaining a comprehensive wettability evaluation index based on the topological interface feature parameters; and obtaining the reservoir wettability evaluation result based on the comprehensive wettability evaluation index.

[0005] In one implementation, the formula for calculating the dynamic wetting angle is:

[0006]

[0007] In the formula, For dynamic wetting angle, For static equilibrium wetting angle, This is the wetting hysteresis correction factor. This represents the speed of movement of the three-phase contact wire.

[0008] In one implementation, the formula for calculating the comprehensive wettability evaluation index is:

[0009] In the formula, To evaluate the comprehensive wettability index, For the pore defect curvature, The number of three-phase intersection lines per unit volume. For normalized weights, and .

[0010] In one alternative implementation, the formula for calculating the porosity defect curvature is:

[0011] In the formula, For the pore defect curvature, The ideal equivalent radius of curvature of the pores. The normal height of the pore wall. This is the tangential length of the pore wall.

[0012] In one alternative implementation, the formula for calculating the number of three-phase intersections per unit volume is:

[0013] In the formula, The number of three-phase intersection lines per unit volume. The total length of the three-phase intersection line within the pore. This represents the pore volume.

[0014] In one implementation, obtaining the reservoir wettability evaluation result based on the comprehensive wettability evaluation index includes: determining the reservoir as a highly hydrophilic and high-quality sealing reservoir when the comprehensive wettability evaluation index is greater than or equal to a first threshold; determining the reservoir as a suitable hydrophilic sealing reservoir when the comprehensive wettability evaluation index is greater than or equal to a second threshold and less than the first threshold; determining the reservoir as a neutrally wettable, moderately wettable sealing reservoir when the comprehensive wettability evaluation index is greater than or equal to a third threshold and less than the second threshold; and determining the reservoir as a hydrophobic, low-quality sealing reservoir when the comprehensive wettability evaluation index is less than the third threshold.

[0015] Secondly, this application proposes a formation wettability evaluation device based on the depletion curvature and the number of three-phase intersection lines. The device includes: an acquisition module for acquiring in-situ environmental data and microscopic image data of a carbon dioxide-sealed reservoir; a first processing module for inputting the in-situ environmental data and the microscopic image data into a parameter extraction model to obtain topological interface feature parameters; the topological interface feature parameters include at least one of the following: dynamic wetting angle, pore depletion curvature, and the number of three-phase intersection lines per unit volume; a second processing module for obtaining a comprehensive wettability evaluation index based on the topological interface feature parameters; and a third processing module for obtaining the reservoir wettability evaluation result based on the comprehensive wettability evaluation index. In one implementation, the dynamic wetting angle is calculated as follows:

[0016] In the formula, For dynamic wetting angle, For static equilibrium wetting angle, This is the wetting hysteresis correction factor. This represents the speed of movement of the three-phase contact wire.

[0017] In one implementation, the formula for calculating the comprehensive wettability evaluation index is:

[0018] In the formula, To evaluate the comprehensive wettability index, For the pore defect curvature, The number of three-phase intersection lines per unit volume. For normalized weights, and .

[0019] In one alternative implementation, the formula for calculating the porosity defect curvature is:

[0020] In the formula, For the pore defect curvature, The ideal equivalent radius of curvature of the pores. The normal height of the pore wall. This is the tangential length of the pore wall.

[0021] In one alternative implementation, the formula for calculating the number of three-phase intersections per unit volume is:

[0022] In the formula, The number of three-phase intersection lines per unit volume. The total length of the three-phase intersection line within the pore. This represents the pore volume.

[0023] In one implementation, the third processing module can be used to: determine a strong hydrophilic high-quality sealing storage layer when the comprehensive wettability evaluation index is greater than or equal to a first threshold; determine a suitable hydrophilic sealing storage layer when the comprehensive wettability evaluation index is greater than or equal to a second threshold and less than the first threshold; determine a neutral wettability general sealing storage layer when the comprehensive wettability evaluation index is greater than or equal to a third threshold and less than the second threshold; and determine a hydrophobic poor-quality sealing storage layer when the comprehensive wettability evaluation index is less than the third threshold.

[0024] Thirdly, this application provides an electronic device comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the method as described in the first aspect.

[0025] Fourthly, this application proposes a storage medium storing instructions that, when executed on an electronic device, cause the electronic device to perform the method described in the first aspect.

[0026] Fifthly, this application proposes a program product comprising at least one of a program and instructions, wherein when the program or instructions are executed by an electronic device, they implement the steps of the method described in the first aspect.

[0027] The formation wettability evaluation method, apparatus, equipment, and storage medium provided in this application, based on defect curvature and the number of three-phase intersections, can acquire in-situ environmental data and microscopic image data of carbon dioxide-sealed reservoirs. Using a parameter extraction model, it calculates topological interface characteristic parameters such as dynamic wetting angle, pore defect curvature, and the number of three-phase intersections per unit volume. Then, it calculates a comprehensive wettability evaluation index based on these characteristic parameters, thereby determining the final reservoir wettability evaluation result. This can improve the accuracy of wettability evaluation for carbon dioxide-sealed reservoirs.

[0028] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0029] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein: Figure 1 This is a schematic flowchart of a formation wettability evaluation method based on the deficiency curvature and the number of three-phase intersections provided in an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a formation wettability evaluation device based on the deficient curvature and the number of three-phase intersection lines provided in an embodiment of this application; Figure 3 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0030] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0031] The following describes, with reference to the accompanying drawings, a method and apparatus for evaluating formation wettability based on deficient curvature and the number of three-phase intersections according to embodiments of this application.

[0032] Figure 1 This is a schematic flowchart illustrating a formation wettability evaluation method based on the deficiency curvature and the number of three-phase intersection lines provided in an embodiment of this application. Figure 1 As shown, the method may include, but is not limited to, the following steps: S1. Obtain in-situ environmental data and microscopic image data of the carbon dioxide sealing storage layer.

[0033] The in-situ environmental data includes at least one of the following: in-situ formation temperature, in-situ formation pressure, pore fluid pressure, in-situ CO2 phase parameters, reservoir in-situ seepage velocity, and dynamic change rate of temperature and pressure.

[0034] For example, in-situ environmental data of the reservoir can be acquired in real time through equipment such as downhole in-situ monitoring sensors, formation core sampling and testing devices, and geostress testing instruments; and high-definition microscopic image data can be obtained by scanning and photographing the pore structure of the reservoir core and the morphology of the gas-liquid-solid three-phase interface.

[0035] S2. Input the in-situ environmental data and microscopic image data into the parameter extraction model to obtain the topological interface feature parameters.

[0036] For example, after standardizing and correcting the acquired in-situ environmental data and microscopic image data, the data is input into a pre-trained parameter extraction model. The parameter extraction model, through pre-training, can perform semantic segmentation, pore contour extraction, and three-phase interface edge recognition on the microscopic image. It then combines the operating condition parameters such as temperature, pressure, and fluid properties in the in-situ environmental data to perform environmental correction and output various topological interface feature parameters such as dynamic wetting angle, pore defect curvature, and number of three-phase intersections per unit volume.

[0037] Among them, the topological interface characteristic parameters include at least one of the following: dynamic wetting angle, pore defect curvature, and number of three-phase intersections per unit volume.

[0038] In one implementation, the formula for calculating the dynamic wetting angle is:

[0039] In the formula, For dynamic wetting angle, For static equilibrium wetting angle, This is the wetting hysteresis correction factor. This represents the speed of movement of the three-phase contact wire.

[0040] S3. Obtain the comprehensive wettability evaluation index based on topological interface feature parameters.

[0041] In one implementation, the formula for calculating the comprehensive wettability evaluation index is:

[0042] In the formula, To evaluate the comprehensive wettability index, For the pore defect curvature, The number of three-phase intersection lines per unit volume. For normalized weights, and .

[0043] In one alternative implementation, the formula for calculating the porosity defect curvature is:

[0044] In the formula, For the pore defect curvature, The ideal equivalent radius of curvature of the pores. The normal height of the pore wall. This is the tangential length of the pore wall.

[0045] In one alternative implementation, the formula for calculating the number of three-phase intersections per unit volume is:

[0046] In the formula, The number of three-phase intersection lines per unit volume. The total length of the three-phase intersection line within the pore. This represents the pore volume.

[0047] S4. Obtain the wettability evaluation results of the reservoir based on the comprehensive wettability evaluation index.

[0048] In one implementation, when the comprehensive wettability evaluation index is greater than or equal to a first threshold, it is determined to be a highly hydrophilic and high-quality sealing storage layer; when the comprehensive wettability evaluation index is greater than or equal to a second threshold and less than the first threshold, it is determined to be a suitable hydrophilic sealing storage layer; when the comprehensive wettability evaluation index is greater than or equal to a third threshold and less than the second threshold, it is determined to be a neutrally wettable and generally good sealing storage layer; and when the comprehensive wettability evaluation index is less than the third threshold, it is determined to be a hydrophobic and poor-quality sealing storage layer.

[0049] Please see Figure 2 , Figure 2This is a schematic diagram of a formation wettability evaluation device based on the deficient curvature and the number of three-phase intersection lines provided in an embodiment of this application. Figure 2 As shown, the device 200 includes: an acquisition module 201 for acquiring in-situ environmental data and microscopic image data of the carbon dioxide-sealed reservoir; a first processing module 202 for inputting the in-situ environmental data and microscopic image data into a parameter extraction model to acquire topological interface feature parameters; the topological interface feature parameters include at least one of the following: dynamic wetting angle, pore defect curvature, and number of three-phase intersections per unit volume; a second processing module 203 for acquiring a comprehensive wettability evaluation index based on the topological interface feature parameters; and a third processing module 204 for acquiring the reservoir wettability evaluation result based on the comprehensive wettability evaluation index. In one implementation, the dynamic wetting angle is calculated as follows:

[0050] In the formula, For dynamic wetting angle, For static equilibrium wetting angle, This is the wetting hysteresis correction factor. This represents the speed of movement of the three-phase contact wire.

[0051] In one implementation, the formula for calculating the comprehensive wettability evaluation index is:

[0052] In the formula, To evaluate the comprehensive wettability index, For the pore defect curvature, The number of three-phase intersection lines per unit volume. For normalized weights, and .

[0053] In one alternative implementation, the formula for calculating the porosity defect curvature is:

[0054] In the formula, For the pore defect curvature, The ideal equivalent radius of curvature of the pores. The normal height of the pore wall. This is the tangential length of the pore wall.

[0055] In one alternative implementation, the formula for calculating the number of three-phase intersections per unit volume is:

[0056] In the formula, The number of three-phase intersection lines per unit volume. The total length of the three-phase intersection line within the pore. This represents the pore volume.

[0057] In one implementation, the third processing module 204 can be used to: determine a strong hydrophilic high-quality sealing storage layer when the comprehensive wettability evaluation index is greater than or equal to the first threshold; determine a suitable hydrophilic sealing storage layer when the comprehensive wettability evaluation index is greater than or equal to the second threshold and less than the first threshold; determine a neutral wettability general sealing storage layer when the comprehensive wettability evaluation index is greater than or equal to the third threshold and less than the second threshold; and determine a hydrophobic poor-quality sealing storage layer when the comprehensive wettability evaluation index is less than the third threshold.

[0058] The apparatus described in this application can acquire in-situ environmental data and microscopic image data of a carbon dioxide-sealed reservoir. Using a parameter extraction model, it calculates topological interface characteristic parameters such as dynamic wetting angle, pore defect curvature, and the number of three-phase intersections per unit volume. These characteristic parameters are then used to calculate a comprehensive wettability evaluation index, ultimately determining the final wettability evaluation result of the reservoir. This improves the accuracy of wettability evaluation for carbon dioxide-sealed reservoirs.

[0059] It should be noted that the foregoing explanation of the formation wettability evaluation method based on the number of depleted curvature and three-phase intersections also applies to the formation wettability evaluation device based on the number of depleted curvature and three-phase intersections in this embodiment, and will not be repeated here.

[0060] To implement the above embodiments, this application also proposes an electronic device. Please see [link to relevant documentation]. Figure 3 , Figure 3 This is a schematic diagram of the structure of the electronic device provided in an embodiment of this application. For example... Figure 3 As shown, the electronic device 300 includes: a processor 301 and a memory 302 communicatively connected to the processor 301; the memory 302 stores computer execution instructions; the processor 301 executes the computer execution instructions stored in the memory to implement the method provided in the foregoing embodiments.

[0061] To implement the above embodiments, this application also proposes a storage medium storing instructions that, when executed on an electronic device, cause the electronic device to perform the methods provided in the foregoing embodiments.

[0062] To implement the above embodiments, this application also proposes a program product, including at least one of a program and instructions, wherein when the program and instructions are executed by an electronic device, the steps of the method provided in the foregoing embodiments are implemented.

[0063] It should be noted that the acquisition, transmission, storage, use, and processing of data in this application comply with the relevant provisions of national laws and regulations and do not violate public order and good morals.

[0064] It should be noted that the information (including but not limited to user device information, user personal information, etc.), data (including but not limited to data used for analysis, data stored, data displayed, etc.) and signals involved in this application are all authorized by the user or fully authorized by all parties, and the collection, use and processing of related data must comply with the relevant laws, regulations and standards of the relevant countries and regions.

[0065] It is worth noting that in the embodiments of this application, certain software, components, models and other existing solutions in the industry may be mentioned. These should be regarded as exemplary and are only intended to illustrate the feasibility of implementing the technical solution of this application. However, they do not mean that the applicant has used or necessarily used the solution.

[0066] In the description of this application, unless otherwise stated, " / " means "or", for example, A / B can mean A or B; "and / or" in this document is merely a description of the relationship between related objects, indicating that there can be three relationships, for example, A and / or B can mean: A exists alone, A and B exist simultaneously, and B exists alone.

[0067] In the foregoing descriptions of the embodiments, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0068] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0069] Any process or method description in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or more executable instructions for implementing custom logic functions or processes, and the scope of the preferred embodiments of this application includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order depending on the functions involved, as should be understood by those skilled in the art to which embodiments of this application pertain.

[0070] The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transmit programs for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include: an electrical connection having one or more wires (electronic device), a portable computer disk drive (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). In addition, computer-readable media can even be paper or other suitable media on which programs can be printed, because programs can be obtained electronically, for example, by optically scanning paper or other media, followed by editing, interpreting or otherwise processing as necessary, and then stored in computer memory.

[0071] It should be understood that various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented using software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0072] Those skilled in the art will understand that all or part of the steps of the methods described in the above embodiments can be implemented by a program instructing related hardware, and the program can be stored in a computer-readable storage medium. When executed, the program includes one or a combination of the steps of the method embodiments.

[0073] Furthermore, the functional units in the various embodiments of this application can be integrated into a processing module, or each unit can exist physically separately, or two or more units can be integrated into a module. The integrated module can be implemented in hardware or as a software functional module. If the integrated module is implemented as a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.

[0074] The storage medium mentioned above can be a read-only memory, a disk, or an optical disk, etc. Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of this application.

Claims

1. A method for evaluating formation wettability based on deficient curvature and the number of three-phase intersection lines, characterized in that, include: Acquire in-situ environmental data and microscopic image data of the carbon dioxide-sealed storage layer; The in-situ environmental data and the microscopic image data are input into a parameter extraction model to obtain topological interface feature parameters; the topological interface feature parameters include at least one of the following: dynamic wetting angle, pore defect curvature, and number of three-phase intersections per unit volume. The comprehensive wettability evaluation index is obtained based on the aforementioned topological interface feature parameters; The wettability evaluation results of the reservoir are obtained based on the comprehensive wettability evaluation index.

2. The method according to claim 1, characterized in that, The formula for calculating the dynamic wetting angle is: In the formula, For dynamic wetting angle, For static equilibrium wetting angle, This is the wetting hysteresis correction factor. This represents the speed of movement of the three-phase contact wire.

3. The method according to claim 1, characterized in that, The formula for calculating the comprehensive wettability evaluation index is as follows: In the formula, To evaluate the comprehensive wettability index, For the pore defect curvature, The number of three-phase intersection lines per unit volume. For normalized weights, and .

4. The method according to claim 3, characterized in that, The formula for calculating the pore defect curvature is: In the formula, For the pore defect curvature, The ideal equivalent radius of curvature of the pores. The normal height of the pore wall. This is the tangential length of the pore wall.

5. The method according to claim 3, characterized in that, The formula for calculating the number of three-phase intersection lines per unit volume is: In the formula, The number of three-phase intersection lines per unit volume. The total length of the three-phase intersection line within the pore. This represents the pore volume.

6. The method according to claim 1, characterized in that, The step of obtaining the reservoir wettability evaluation result based on the comprehensive wettability evaluation index includes: When the comprehensive wettability evaluation index is greater than or equal to the first threshold, it is determined to be a strong hydrophilic high-quality sealing and storage layer; When the comprehensive wettability evaluation index is greater than or equal to the second threshold and less than the first threshold, it is determined to be a hydrophilic suitable sealing and storage layer; When the comprehensive wettability evaluation index is greater than or equal to the third threshold and less than the second threshold, it is determined to be a neutral wettability general sealing storage layer. When the comprehensive wettability evaluation index is less than the third threshold, it is determined to be a hydrophobic and inferior sealing storage layer.

7. A formation wettability evaluation device based on the number of depleted curvature and three-phase intersection lines, characterized in that, include: The acquisition module is used to acquire in-situ environmental data and microscopic image data of the carbon dioxide sealing storage layer; The first processing module is used to input the in-situ environmental data and the microscopic image data into a parameter extraction model to obtain topological interface feature parameters; the topological interface feature parameters include at least one of the following: dynamic wetting angle, pore defect curvature, and number of three-phase intersections per unit volume. The second processing module is used to obtain a comprehensive wettability evaluation index based on the topological interface feature parameters. The third processing module is used to obtain the reservoir wettability evaluation result based on the comprehensive wettability evaluation index.

8. An electronic device, characterized in that, include: A processor, and a memory communicatively connected to the processor; The memory stores computer-executed instructions; The processor executes computer execution instructions stored in the memory to implement the method as described in any one of claims 1 to 6.

9. A storage medium storing instructions, characterized in that, When the instructions are executed on an electronic device, the electronic device causes the electronic device to perform the method of any one of claims 1 to 6.

10. A program product comprising at least one of a program and instructions, characterized in that, When at least one of the program or instructions is executed by an electronic device, it implements the steps of the method according to any one of claims 1 to 6.

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