Low-reflectivity blackened lens gasket structure and processing technology thereof

Abstract

The present application relates to the technical field of lens gasket, disclose a kind of low reflectivity's lens gasket blackening structure and its processing technology, comprising: metal base is deposited titanium connecting layer, titanium connecting layer is deposited first Ti3O5-Ta layer, first Ti3O5-Ta layer is deposited second MgF2-B layer, second MgF2-B layer is deposited third Ti3O5-Al2O3 layer, third Ti3O5-Al2O3 layer is deposited fourth MgF2-Fe layer, fourth MgF2-Fe layer is deposited fifth Ti3O5-C layer, fifth Ti3O5-C layer is deposited sixth MgF2-Ti layer, sixth MgF2-Ti layer is deposited seventh Ti3O5 layer, seventh Ti3O5 layer is deposited eighth MgF2 layer;These layer structures can be combined into high absorption and low reflectivity's film layer, it has the effect of reducing reflection and blackening etc., can also reduce cost etc..

Description

Technical Field

[0001] This invention relates to the technical field of lens gaskets, specifically to a low-reflectivity lens gasket black-plated structure and its processing technology. Background Technology

[0002] In optical lens systems, lens gaskets (also known as aperture blades, lens hoods, or spacers) are typically used to define the optical path, support lens elements, or block stray light. Since lens gaskets are generally located near the optical path, their surface reflectivity directly affects image quality. If the surface reflectivity of the lens gasket is too high, stray light interference will occur, and reflected light from the lens gasket surface will enter the optical system, causing blurring and ghosting. Furthermore, the blackness of lens gaskets on the market is insufficient. Traditional lens gaskets often use anodized black, matte black paint, or chemical blackening treatments, resulting in poor adhesion, insufficient abrasion resistance, and poor high-temperature stability. Additionally, optical performance is limited; conventional black coatings struggle to balance low reflectivity with broad-spectrum absorption, especially in the visible to near-infrared range. Finally, there is poor process adaptability; existing coating methods are mostly simple and cannot meet the consistent low-reflectivity requirements of some high-precision lenses. In addition, existing lens gaskets mostly use single-layer paint, matte sandblasting, or ordinary single-layer anti-reflective film structures, which have defects such as high specular stray light reflectivity, no light absorption and extinction ability of the film layer, easy film layer peeling off under high and low temperature conditions, and poor matching of multi-layer film systems. These defects can easily cause lens imaging glare, ghosting, and reduced contrast, seriously affecting the optical imaging quality.

[0003] Therefore, it is necessary to develop a low-reflectivity lens gasket black coating structure and its processing technology to further achieve better anti-reflection and blackening effects. Summary of the Invention

[0004] The purpose of this invention is to overcome the problems of weak adhesion between film layers, refractive index deviation between film layers, poor film layer matching, complex process, and high cost in existing lens gaskets. By rationally designing the black coating structure of the lens gasket, using a metal substrate, a titanium connecting layer, a first Ti3O5-Ta layer, a second MgF2-B layer, a third Ti3O5-Al2O3 layer, a fourth MgF2-Fe layer, a fifth Ti3O5-C layer, a sixth MgF2-Ti layer, a seventh Ti3O5 layer, and an eighth MgF2 layer, it can achieve better bonding to the stainless steel substrate, and also has the effects of anti-reflection and blackening, while also reducing costs; it can also achieve strong bonding and compatibility between film layers.

[0005] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: A low-reflectivity lens gasket black-plated structure comprises: a metal substrate, a titanium bonding layer, a first Ti3O5-Ta layer, a second MgF2-B layer, a third Ti3O5-Al2O3 layer, a fourth MgF2-Fe layer, a fifth Ti3O5-C layer, a sixth MgF2-Ti layer, a seventh Ti3O5 layer, and an eighth MgF2 layer. A titanium bonding layer is deposited on the metal substrate using vacuum deposition technology. A first Ti3O5-Ta layer is deposited on the titanium bonding layer using vacuum deposition technology. A second MgF2-B layer is deposited on the first Ti3O5-Ta layer using vacuum deposition technology. The second MgF2-B layer is deposited on the first Ti3O5-Ta layer using vacuum deposition technology. A third Ti3O5-Al2O3 layer is deposited on the MgF2-B layer using vacuum deposition technology. A fourth MgF2-Fe layer is deposited on the third Ti3O5-Al2O3 layer using vacuum deposition technology. A fifth Ti3O5-C layer is deposited on the fourth MgF2-Fe layer using vacuum deposition technology. A sixth MgF2-Ti layer is deposited on the fifth Ti3O5-C layer using vacuum deposition technology. A seventh Ti3O5 layer is deposited on the sixth MgF2-Ti layer using vacuum deposition technology. An eighth MgF2 layer is deposited on the seventh Ti3O5 layer using vacuum deposition technology. The eighth MgF2 layer is selected as a MgF2 layer containing titanium dioxide nanoparticles; and the eighth MgF2 layer is formed by dense shaping and bombardment with an argon ion source.

[0006] Furthermore, the vacuum coating technology selected is magnetron sputtering vacuum coating technology.

[0007] Furthermore, the first Ti3O5-Ta layer is selected as a Ti3O5-Ta layer composed of tightly packed Ti3O5-Ta with high density.

[0008] Furthermore, the third Ti3O5-Al2O3 layer is selected as a Ti3O5-Al2O3 layer with a high density of tightly packed Ti3O5-Al2O3.

[0009] Furthermore, the fifth Ti3O5-C layer is selected as a Ti3O5-C layer composed of tightly packed Ti3O5-C with high density.

[0010] Furthermore, the seventh Ti3O5 layer is selected as a Ti3O5 layer composed of densely packed Ti3O5.

[0011] Furthermore, the second MgF2-B layer is selected as a MgF2-B layer composed of closely packed MgF2-B with high density.

[0012] Furthermore, the fourth MgF2-Fe layer is selected as a MgF2-Fe layer composed of densely packed MgF2-Fe.

[0013] Furthermore, the sixth MgF2-Ti layer is selected as a MgF2-Ti layer composed of closely packed MgF2-Ti with high density.

[0014] Furthermore, the eighth MgF2 layer is selected as a MgF2 layer composed of densely packed MgF2.

[0015] Furthermore, the thickness of the first Ti3O5-Ta layer is greater than the thickness of the fifth Ti3O5-C layer, which is greater than the thickness of the third Ti3O5-Al2O3 layer, which is greater than the thickness of the seventh Ti3O5 layer.

[0016] Furthermore, the thickness of the eighth MgF2 layer is greater than the thickness of the second MgF2-B layer, which is greater than the thickness of the sixth MgF2-Ti layer, which is greater than the thickness of the fourth MgF2-Fe layer.

[0017] Furthermore, the thickness of the eighth MgF2 layer is greater than the thickness of the seventh Ti3O5 layer, the thickness of the third Ti3O5-Al2O3 layer, or the thickness of the fifth Ti3O5-C layer.

[0018] Furthermore, the thickness of the titanium connecting layer is less than the thickness of the first Ti3O5-Ta layer, the second MgF2-B layer, the third Ti3O5-Al2O3 layer, the fourth MgF2-Fe layer, the fifth Ti3O5-C layer, the sixth MgF2-Ti layer, the seventh Ti3O5 layer, or the eighth MgF2 layer.

[0019] Furthermore, the thickness of the eighth MgF2 layer is selected to be 110nm-120nm.

[0020] Furthermore, the thickness of the sixth MgF2-Ti layer is selected to be 25nm-30nm.

[0021] Furthermore, the thickness of the fourth MgF2-Fe layer is selected to be 15nm-20nm.

[0022] Furthermore, the thickness of the second MgF2-B layer is selected to be 35nm-40nm.

[0023] Furthermore, the thickness of the seventh Ti3O5 layer is selected to be 20nm-25nm.

[0024] Furthermore, the thickness of the fifth Ti3O5-C layer is selected to be 95nm-100nm.

[0025] Furthermore, the thickness of the third Ti3O5-Al2O3 layer is selected to be 25nm-30nm.

[0026] Furthermore, the thickness of the first Ti3O5-Ta layer is selected to be 120nm-130nm.

[0027] Furthermore, the thickness of the titanium connecting layer is selected to be 10nm-15nm.

[0028] Furthermore, the metal substrate is made of stainless steel or aluminum.

[0029] Furthermore, a processing technology for a low-reflectivity lens gasket black-plated structure, the specific steps of which are as follows: Step 1: Cleaning the substrate: Select a stainless steel substrate and place it in a chemical cleaning machine to remove surface oxides and oil stains from the upper and lower surfaces of the stainless steel substrate. Here, RCA cleaning agent is used for cleaning, followed by rinsing with deionized water, and then drying in a nitrogen environment. Step 2: Formation of the substrate with the titanium bonding layer: Based on step 1, a stainless steel substrate is selected, and the temperature of the vacuum coating machine cavity is set to 100℃ to stabilize the cavity temperature. The stainless steel substrate is placed in the fixture of the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, and the anode voltage is set to 150V and the anode current to 5A to bombard and activate the surface of the stainless steel substrate with ions, thereby improving the surface activity of the stainless steel substrate and enhancing the adhesion of the film layer. Then, the titanium target is placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. Electron beam heating evaporation is used, with argon ion source as the auxiliary agent throughout the process, to deposit the titanium bonding layer on the stainless steel substrate, thus preparing a substrate with a titanium bonding layer. Step 3: Formation of the substrate with the first Ti3O5-Ta layer: Based on step 2, a substrate with a titanium bonding layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the titanium bonding layer is placed in the fixture of the vacuum coating machine, and then the Ti3O5 target and tantalum target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and electron beam heating evaporation is used with argon ion source for full-process assisted deposition to deposit the first Ti3O5-Ta layer on the substrate with the titanium bonding layer, thus preparing a substrate with the first Ti3O5-Ta layer. Step 4: Formation of the substrate with the second MgF2-B layer: Based on step 3, a substrate with the first Ti3O5-Ta layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the first Ti3O5-Ta layer is placed in the fixture of the vacuum coating machine, and then the MgF2 ceramic target and boron target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and the electron beam heating evaporation method is used with the argon ion source to assist the entire process of deposition, so that the second MgF2-B layer is deposited on the substrate with the first Ti3O5-Ta layer, thus preparing a substrate with the second MgF2-B layer. Step 5: Formation of the substrate with the third Ti3O5-Al2O3 layer: Based on step 4, a substrate with the second MgF2-B layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the second MgF2-B layer is placed in the fixture of the vacuum coating machine, and then the Ti3O5 target and Al2O3 target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and electron beam heating evaporation is used with argon ion source for full-process assisted deposition to deposit the third Ti3O5-Al2O3 layer on the substrate with the second MgF2-B layer, thus preparing a substrate with the third Ti3O5-Al2O3 layer. Step 6: Formation of the substrate with the fourth MgF2-Fe layer: Based on step 5, a substrate with a third Ti3O5-Al2O3 layer is selected. The temperature of the vacuum coating machine cavity is set to 100℃ and the cavity temperature is stabilized. The substrate with the third Ti3O5-Al2O3 layer is placed in the fixture of the vacuum coating machine. Then, the MgF2 ceramic target and the iron target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and the electron beam heating evaporation method is used with the argon ion source to assist the entire process of deposition. The fourth MgF2-Fe layer is deposited on the substrate with the third Ti3O5-Al2O3 layer to prepare a substrate with a fourth MgF2-Fe layer. Step 7: Formation of the substrate with the fifth Ti3O5-C layer: Based on step 6, a substrate with the fourth MgF2-Fe layer is selected. The temperature of the vacuum coating machine cavity is set to 100℃ to stabilize the cavity temperature. The substrate with the fourth MgF2-Fe layer is placed in the fixture of the vacuum coating machine. Then, the Ti3O5 target and carbon target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, and the anode voltage is set to 150V and the anode current to 5A. Electron beam heating evaporation is used, with argon ion source as the full-process flux, to deposit the fifth Ti3O5-C layer on the substrate with the fourth MgF2-Fe layer, thus preparing a substrate with the fifth Ti3O5-C layer. Step 8: Formation of the substrate with the sixth MgF2-Ti layer: Based on step 7, a substrate with the fifth Ti3O5-C layer is selected. The temperature of the vacuum coating machine cavity is set to 100℃ to stabilize the cavity temperature. The substrate with the fifth Ti3O5-C layer is placed in the fixture of the vacuum coating machine. Then, the MgF2 ceramic target and titanium target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and the electron beam heating evaporation method is used with the argon ion source to assist the entire process of deposition. The sixth MgF2-Ti layer is deposited on the substrate with the fifth Ti3O5-C layer to prepare a substrate with the sixth MgF2-Ti layer. Step 9: Formation of the substrate with the seventh Ti3O5 layer: Based on step 8, a substrate with the sixth MgF2-Ti layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the sixth MgF2-Ti layer is placed in the fixture of the vacuum coating machine, and then the Ti3O5 target is placed in the vacuum coating machine. The cavity is sealed and evacuated to the process preset vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and electron beam heating evaporation is used with argon ion source to assist the entire process. The seventh Ti3O5 layer is deposited on the substrate with the sixth MgF2-Ti layer to prepare a substrate with the seventh Ti3O5 layer. Step 10: Formation of the substrate with the eighth MgF2 layer: Based on step 9, a substrate with the seventh Ti3O5 layer is selected. The vacuum coating machine chamber temperature is set to 100℃ and stabilized. The substrate with the seventh Ti3O5 layer is placed in the fixture of the vacuum coating machine. Then, the MgF2 ceramic target and TiO2 target are placed into the vacuum coating machine, the chamber is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, and the anode voltage is set to 150V and the anode current to 5A. Electron beam heating evaporation is used, with argon ion source as the flux throughout the process, to deposit the eighth MgF2 layer on the substrate with the seventh Ti3O5 layer, thus preparing a substrate with the eighth MgF2 layer. At this point, the eighth MgF2 layer contains TiO2 nanoparticles. After removing the remaining MgF2 ceramic target and TiO2 target, or after the MgF2 ceramic target and TiO2 target have been exhausted, continue using an argon ion source, maintaining an anode voltage of 150V and an anode current of 5A, and continuously bombard the surface of the last eighth MgF2 layer with argon gas for 120s. After all film layers have been deposited, maintain the vacuum chamber at a constant temperature for static annealing to eliminate internal stress in the film layers. The vacuum annealing temperature is 120℃, and the annealing holding time is 30-60min, which effectively improves the density and aging resistance of the film layers. Then, cool the chamber to room temperature to stabilize the film layer structure, remove the workpiece, and inspect it. This process is used to prepare the black-plated structure of the lens gasket.

[0030] The titanium bonding layer is used to improve the adhesion between the film layer and the gasket substrate.

[0031] Among them, the film containing Ti3O5 is a high refractive index coating medium. After oxygen loss during evaporation, a black TiO absorbing phase is generated, which has the ability to absorb stray visible light. The film containing MgF2 is a low refractive index optical coating medium, which, together with Ti3O5, forms a high and low refractive index interference antireflection system.

[0032] Beneficial effects This invention, through the rational design of the black-plated structure of the lens gasket, employs a metal substrate, a titanium connecting layer, a first Ti3O5-Ta layer, a second MgF2-B layer, a third Ti3O5-Al2O3 layer, a fourth MgF2-Fe layer, a fifth Ti3O5-C layer, a sixth MgF2-Ti layer, a seventh Ti3O5 layer, and an eighth MgF2 layer. This rational design allows for better bonding to the stainless steel substrate, while also providing anti-reflection and blackening effects, reducing costs, and achieving strong bonding and compatibility between the film layers. Specifically, this black-plated structure of the lens gasket exhibits low reflectivity and high blackness. By alternately depositing high-refractive-index Ti3O5 layers and low-refractive-index MgF2 layers on the metal substrate, forming a progressively increasing thickness gradient structure, the overall film exhibits approximately gradient refractive index characteristics, effectively suppressing reflection in the visible light band. This structure reduces the surface reflectivity of the lens gasket to below 5%, resulting in a uniform deep black appearance and significantly reducing stray light interference. The black-plated structure of the lens gasket exhibits strong adhesion and high reliability. A titanium bonding layer is introduced between the metal substrate and the optical thin film. Utilizing the high bonding energy between titanium and the metal substrate, as well as its good compatibility with the oxide thin film, the adhesion of the film is greatly improved, effectively preventing film peeling, flaking, or cracking, and meeting the requirements for long-term use under high temperature, high humidity, and mechanical vibration environments. The black-plated structure of the lens gasket offers good process controllability and repeatability. Employing magnetron sputtering vacuum coating technology, and precisely controlling the gas flow rate and deposition sequence of each layer, the density, refractive index, and thickness of the Ti3O5 and MgF2 layers are stably controlled, resulting in a clear process window suitable for industrial mass production. Furthermore, the double-sided coating of the black-plated structure of the lens gasket has wide applicability. The metal substrate can be coated simultaneously on both sides, giving both sides of the lens gasket low-reflection characteristics. This is particularly suitable for precision optical systems with strict stray light control requirements, improving overall optical consistency and assembly flexibility. In addition, it can significantly reduce the reflectivity of the visible light band on the surface of the lens gasket, effectively eliminate stray light, ghosting and glare inside the optical system, and has strong film adhesion, excellent temperature resistance and aging resistance. It is suitable for high-precision optical equipment such as high-definition camera lenses, industrial optical lenses, security lenses, and automotive optical lenses. It has strong mass production capability and controllable cost. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of a low-reflectivity lens gasket black-plated structure according to the present invention.

[0034] Figure 2 This is a schematic diagram of the fabrication process of a low-reflectivity lens gasket black-plated structure according to the present invention.

[0035] Figure 3 This is a schematic diagram illustrating the application of a low-reflectivity lens gasket black-plated structure according to the present invention.

[0036] Figure 4 This is a schematic diagram illustrating the relationship between reflectivity and wavelength of a low-reflectivity lens gasket black-plated structure according to the present invention.

[0037] Figure descriptions: 01. Metal substrate; 02. Titanium bonding layer; 03. First Ti3O5-Ta layer; 04. Second MgF2-B layer; 05. Third Ti3O5-Al2O3 layer; 06. Fourth MgF2-Fe layer; 07. Fifth Ti3O5-C layer; 08. Sixth MgF2-Ti layer; 09. Seventh Ti3O5 layer; 10. Eighth MgF2 layer. Detailed Implementation

[0038] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] See Figure 1 As shown, the present invention provides a low-reflectivity lens gasket black-plated structure, which includes: a metal substrate 01, a titanium connecting layer 02, a first Ti3O5-Ta layer 03, a second MgF2-B layer 04, a third Ti3O5-Al2O3 layer 05, a fourth MgF2-Fe layer 06, a fifth Ti3O5-C layer 07, a sixth MgF2-Ti layer 08, a seventh Ti3O5 layer 09, and an eighth MgF2 layer 10. A titanium connecting layer is deposited on the metal substrate using vacuum deposition technology, and a first Ti3O5-Ta layer is deposited on the titanium connecting layer using vacuum deposition technology. Finally, a vacuum deposition technology is applied to the first Ti3O5-Ta layer. A second MgF2-B layer is deposited, a third Ti3O5-Al2O3 layer is deposited on the second MgF2-B layer using vacuum deposition technology, a fourth MgF2-Fe layer is deposited on the third Ti3O5-Al2O3 layer using vacuum deposition technology, a fifth Ti3O5-C layer is deposited on the fourth MgF2-Fe layer using vacuum deposition technology, a sixth MgF2-Ti layer is deposited on the fifth Ti3O5-C layer using vacuum deposition technology, a seventh Ti3O5 layer is deposited on the sixth MgF2-Ti layer using vacuum deposition technology, and an eighth MgF2 layer is deposited on the seventh Ti3O5 layer using vacuum deposition technology. The eighth MgF2 layer is selected as a MgF2 layer containing titanium dioxide nanoparticles; and the eighth MgF2 layer is formed by dense shaping and bombardment with an argon ion source.

[0040] Among them, the vacuum coating technology selected is the magnetron sputtering vacuum coating technology.

[0041] The first Ti3O5-Ta layer is selected as a Ti3O5-Ta layer with high density and close packing. The third Ti3O5-Al2O3 layer is selected as a Ti3O5-Al2O3 layer with high density and close packing. The fifth Ti3O5-C layer is selected as a Ti3O5-C layer with high density and close packing. The seventh Ti3O5 layer is selected as a Ti3O5 layer with high density and close packing. The second MgF2-B layer is selected as a MgF2-B layer with high density and close packing. The fourth MgF2-Fe layer is selected as a MgF2-Fe layer with high density and close packing. The sixth MgF2-Ti layer is selected as a MgF2-Ti layer with high density and close packing. The eighth MgF2 layer is selected as a MgF2 layer with high density and close packing. The thickness of the first Ti3O5-Ta layer is greater than the thickness of the fifth Ti3O5-C layer, which is greater than the thickness of the third Ti3O5-Al2O3 layer, which is greater than the thickness of the seventh Ti3O5 layer. The thickness of the eighth MgF2 layer is greater than the thickness of the second MgF2-B layer, which is greater than the thickness of the sixth MgF2-Ti layer, which is greater than the thickness of the fourth MgF2-Fe layer. The thickness of the eighth MgF2 layer is greater than the thickness of the seventh Ti3O5 layer, or the thickness of the third Ti3O5-Al2O3 layer, or the thickness of the fifth Ti3O5-C layer. The thickness of the titanium bonding layer is less than the thickness of the first Ti3O5-Ta layer, the second MgF2-B layer, the third Ti3O5-Al2O3 layer, the fourth MgF2-Fe layer, the fifth Ti3O5-C layer, the sixth MgF2-Ti layer, the seventh Ti3O5 layer, or the eighth MgF2 layer.

[0042] The thickness of the eighth MgF2 layer is 120 nm. The thickness of the sixth MgF2-Ti layer is 30 nm. The thickness of the fourth MgF2-Fe layer is 20 nm. The thickness of the second MgF2-B layer is 35 nm. The thickness of the seventh Ti3O5 layer is 25 nm. The thickness of the fifth Ti3O5-C layer is 100 nm. The thickness of the third Ti3O5-Al2O3 layer is 28 nm. The thickness of the first Ti3O5-Ta layer is 130 nm. The thickness of the titanium bonding layer is 15 nm.

[0043] The metal substrate is made of stainless steel or aluminum.

[0044] One of the processing techniques for a low-reflectivity lens gasket black-plated structure includes the following specific steps: Step 1: Cleaning the substrate: Select a stainless steel substrate and place it in a chemical cleaning machine to remove surface oxides and oil stains from the upper and lower surfaces of the stainless steel substrate. Here, RCA cleaning agent is used for cleaning, followed by rinsing with deionized water, and then drying in a nitrogen environment. Step 2: Formation of the substrate with the titanium bonding layer: Based on step 1, a stainless steel substrate is selected, and the temperature of the vacuum coating machine cavity is set to 100℃ to stabilize the cavity temperature. The stainless steel substrate is placed in the fixture of the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, and the anode voltage is set to 150V and the anode current to 5A to bombard and activate the surface of the stainless steel substrate with ions, thereby improving the surface activity of the stainless steel substrate and enhancing the adhesion of the film layer. Then, the titanium target is placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. Electron beam heating evaporation is used, with argon ion source as the auxiliary agent throughout the process, to deposit the titanium bonding layer on the stainless steel substrate, thus preparing a substrate with a titanium bonding layer. Step 3: Formation of the substrate with the first Ti3O5-Ta layer: Based on step 2, a substrate with a titanium bonding layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the titanium bonding layer is placed in the fixture of the vacuum coating machine, and then the Ti3O5 target and tantalum target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and electron beam heating evaporation is used with argon ion source for full-process assisted deposition to deposit the first Ti3O5-Ta layer on the substrate with the titanium bonding layer, thus preparing a substrate with the first Ti3O5-Ta layer. Step 4: Formation of the substrate with the second MgF2-B layer: Based on step 3, a substrate with the first Ti3O5-Ta layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the first Ti3O5-Ta layer is placed in the fixture of the vacuum coating machine, and then the MgF2 ceramic target and boron target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and the electron beam heating evaporation method is used with the argon ion source to assist the entire process of deposition, so that the second MgF2-B layer is deposited on the substrate with the first Ti3O5-Ta layer, thus preparing a substrate with the second MgF2-B layer. Step 5: Formation of the substrate with the third Ti3O5-Al2O3 layer: Based on step 4, a substrate with the second MgF2-B layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the second MgF2-B layer is placed in the fixture of the vacuum coating machine, and then the Ti3O5 target and Al2O3 target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and electron beam heating evaporation is used with argon ion source for full-process assisted deposition to deposit the third Ti3O5-Al2O3 layer on the substrate with the second MgF2-B layer, thus preparing a substrate with the third Ti3O5-Al2O3 layer. Step 6: Formation of the substrate with the fourth MgF2-Fe layer: Based on step 5, a substrate with a third Ti3O5-Al2O3 layer is selected. The temperature of the vacuum coating machine cavity is set to 100℃ and the cavity temperature is stabilized. The substrate with the third Ti3O5-Al2O3 layer is placed in the fixture of the vacuum coating machine. Then, the MgF2 ceramic target and the iron target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and the electron beam heating evaporation method is used with the argon ion source to assist the entire process of deposition. The fourth MgF2-Fe layer is deposited on the substrate with the third Ti3O5-Al2O3 layer to prepare a substrate with a fourth MgF2-Fe layer. Step 7: Formation of the substrate with the fifth Ti3O5-C layer: Based on step 6, a substrate with the fourth MgF2-Fe layer is selected. The temperature of the vacuum coating machine cavity is set to 100℃ to stabilize the cavity temperature. The substrate with the fourth MgF2-Fe layer is placed in the fixture of the vacuum coating machine. Then, the Ti3O5 target and carbon target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, and the anode voltage is set to 150V and the anode current to 5A. Electron beam heating evaporation is used, with argon ion source as the full-process flux, to deposit the fifth Ti3O5-C layer on the substrate with the fourth MgF2-Fe layer, thus preparing a substrate with the fifth Ti3O5-C layer. Step 8: Formation of the substrate with the sixth MgF2-Ti layer: Based on step 7, a substrate with the fifth Ti3O5-C layer is selected. The temperature of the vacuum coating machine cavity is set to 100℃ to stabilize the cavity temperature. The substrate with the fifth Ti3O5-C layer is placed in the fixture of the vacuum coating machine. Then, the MgF2 ceramic target and titanium target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and the electron beam heating evaporation method is used with the argon ion source to assist the entire process of deposition. The sixth MgF2-Ti layer is deposited on the substrate with the fifth Ti3O5-C layer to prepare a substrate with the sixth MgF2-Ti layer. Step 9: Formation of the substrate with the seventh Ti3O5 layer: Based on step 8, a substrate with the sixth MgF2-Ti layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the sixth MgF2-Ti layer is placed in the fixture of the vacuum coating machine, and then the Ti3O5 target is placed in the vacuum coating machine. The cavity is sealed and evacuated to the process preset vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and electron beam heating evaporation is used with argon ion source to assist the entire process. The seventh Ti3O5 layer is deposited on the substrate with the sixth MgF2-Ti layer to prepare a substrate with the seventh Ti3O5 layer. Step 10: Formation of the substrate with the eighth MgF2 layer: Based on step 9, a substrate with the seventh Ti3O5 layer is selected. The vacuum coating machine chamber temperature is set to 100℃ and stabilized. The substrate with the seventh Ti3O5 layer is placed in the fixture of the vacuum coating machine. Then, the MgF2 ceramic target and TiO2 target are placed into the vacuum coating machine, the chamber is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, and the anode voltage is set to 150V and the anode current to 5A. Electron beam heating evaporation is used, with argon ion source as the flux throughout the process, to deposit the eighth MgF2 layer on the substrate with the seventh Ti3O5 layer, thus preparing a substrate with the eighth MgF2 layer. At this point, the eighth MgF2 layer contains TiO2 nanoparticles. After removing the remaining MgF2 ceramic target and TiO2 target, or after the MgF2 ceramic target and TiO2 target have been exhausted, continue using an argon ion source, maintaining an anode voltage of 150V and an anode current of 5A, and continuously bombard the surface of the last eighth MgF2 layer with argon gas for 120s. After all film layers have been deposited, maintain the vacuum chamber at a constant temperature for static annealing to eliminate internal stress in the film layers. The vacuum annealing temperature is 120℃, and the annealing holding time is 30-60min, which effectively improves the density and aging resistance of the film layers. Then, cool the chamber to room temperature to stabilize the film layer structure, remove the workpiece, and inspect it. This process is used to prepare the black-plated structure of the lens gasket.

[0045] See Figure 3 As shown, the interior of the gray ring is the black-plated structure of the lens gasket, and it can be seen that the black plating of this lens gasket is exceptionally black. (See also...) Figure 4 As shown, the horizontal axis of the image represents wavelength in nm, and the vertical axis represents reflectance. It can be seen that its reflectance R% is extremely low, especially in the visible light range, where it can be as low as about 2%.

[0046] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A low-reflectivity lens gasket black-plated structure, characterized in that, The black-plated structure of the lens gasket includes: a metal substrate, a titanium connecting layer, a first Ti3O5-Ta layer, a second MgF2-B layer, a third Ti3O5-Al2O3 layer, a fourth MgF2-Fe layer, a fifth Ti3O5-C layer, a sixth MgF2-Ti layer, a seventh Ti3O5 layer, and an eighth MgF2 layer. A titanium connecting layer is deposited on the metal substrate using vacuum deposition technology. A first Ti3O5-Ta layer is deposited on the titanium connecting layer using vacuum deposition technology. A second MgF2-B layer is deposited on the first Ti3O5-Ta layer using vacuum deposition technology. A third Ti3O5-Al2O3 layer is deposited using vacuum deposition technology. A fourth MgF2-Fe layer is deposited on the third Ti3O5-Al2O3 layer using vacuum deposition technology. A fifth Ti3O5-C layer is deposited on the fourth MgF2-Fe layer using vacuum deposition technology. A sixth MgF2-Ti layer is deposited on the fifth Ti3O5-C layer using vacuum deposition technology. A seventh Ti3O5 layer is deposited on the sixth MgF2-Ti layer using vacuum deposition technology. An eighth MgF2 layer is deposited on the seventh Ti3O5 layer using vacuum deposition technology. The eighth MgF2 layer is selected as a MgF2 layer containing titanium dioxide nanoparticles; and the eighth MgF2 layer is formed by dense shaping and bombardment with an argon ion source.

2. The low-reflectivity lens gasket black-plated structure according to claim 1, characterized in that, The vacuum coating technology selected is magnetron sputtering vacuum coating technology.

3. The low-reflectivity lens gasket black-plated structure according to claim 1, characterized in that, The seventh Ti3O5 layer is selected as a Ti3O5 layer composed of tightly packed Ti3O5 with high density.

4. The low-reflectivity lens gasket black-plated structure according to claim 1, characterized in that, The eighth MgF2 layer is selected as a MgF2 layer composed of closely packed MgF2 with high density.

5. The low-reflectivity lens gasket black-plated structure according to claim 1, characterized in that, The thickness of the first Ti3O5-Ta layer is greater than the thickness of the fifth Ti3O5-C layer, which is greater than the thickness of the third Ti3O5-Al2O3 layer, which is greater than the thickness of the seventh Ti3O5 layer.

6. The low-reflectivity lens gasket black-plated structure according to claim 1, characterized in that, The thickness of the eighth MgF2 layer is greater than the thickness of the second MgF2-B layer, which is greater than the thickness of the sixth MgF2-Ti layer, which is greater than the thickness of the fourth MgF2-Fe layer.

7. The low-reflectivity lens gasket black-plated structure according to claim 1, characterized in that, The thickness of the eighth MgF2 layer is greater than the thickness of the seventh Ti3O5 layer, or the thickness of the third Ti3O5-Al2O3 layer, or the thickness of the fifth Ti3O5-C layer.

8. The low-reflectivity lens gasket black-plated structure according to claim 5, characterized in that, The thickness of the titanium connecting layer is less than the thickness of the first Ti3O5-Ta layer, the second MgF2-B layer, the third Ti3O5-Al2O3 layer, the fourth MgF2-Fe layer, the fifth Ti3O5-C layer, the sixth MgF2-Ti layer, the seventh Ti3O5 layer, or the eighth MgF2 layer.

9. The low-reflectivity lens gasket black-plated structure according to claim 1, characterized in that, The metal substrate is made of stainless steel or aluminum.

10. A processing technology for a low-reflectivity lens gasket black-plated structure, characterized in that, The specific steps of the processing technology are as follows: Step 1: Cleaning the substrate: Select a stainless steel substrate and place it in a chemical cleaning machine to remove surface oxides and oil stains from the upper and lower surfaces of the stainless steel substrate. Here, RCA cleaning agent is used for cleaning, followed by rinsing with deionized water, and then drying in a nitrogen environment. Step 2: Formation of the substrate with the titanium bonding layer: Based on step 1, a stainless steel substrate is selected, and the temperature of the vacuum coating machine cavity is set to 100℃ to stabilize the cavity temperature. The stainless steel substrate is placed in the fixture of the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, and the anode voltage is set to 150V and the anode current to 5A to bombard and activate the surface of the stainless steel substrate with ions, thereby improving the surface activity of the stainless steel substrate and enhancing the adhesion of the film layer. Then, the titanium target is placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. Electron beam heating evaporation is used, with argon ion source as the auxiliary agent throughout the process, to deposit the titanium bonding layer on the stainless steel substrate, thus preparing a substrate with a titanium bonding layer. Step 3: Formation of the substrate with the first Ti3O5-Ta layer: Based on step 2, a substrate with a titanium bonding layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the titanium bonding layer is placed in the fixture of the vacuum coating machine, and then the Ti3O5 target and tantalum target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and electron beam heating evaporation is used with argon ion source for full-process assisted deposition to deposit the first Ti3O5-Ta layer on the substrate with the titanium bonding layer, thus preparing a substrate with the first Ti3O5-Ta layer. Step 4: Formation of the substrate with the second MgF2-B layer: Based on step 3, a substrate with the first Ti3O5-Ta layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the first Ti3O5-Ta layer is placed in the fixture of the vacuum coating machine, and then the MgF2 ceramic target and boron target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and the electron beam heating evaporation method is used with the argon ion source to assist the entire process of deposition, so that the second MgF2-B layer is deposited on the substrate with the first Ti3O5-Ta layer, thus preparing a substrate with the second MgF2-B layer. Step 5: Formation of the substrate with the third Ti3O5-Al2O3 layer: Based on step 4, a substrate with the second MgF2-B layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the second MgF2-B layer is placed in the fixture of the vacuum coating machine, and then the Ti3O5 target and Al2O3 target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and electron beam heating evaporation is used with argon ion source for full-process assisted deposition to deposit the third Ti3O5-Al2O3 layer on the substrate with the second MgF2-B layer, thus preparing a substrate with the third Ti3O5-Al2O3 layer. Step 6: Formation of the substrate with the fourth MgF2-Fe layer: Based on step 5, a substrate with a third Ti3O5-Al2O3 layer is selected. The temperature of the vacuum coating machine cavity is set to 100℃ and the cavity temperature is stabilized. The substrate with the third Ti3O5-Al2O3 layer is placed in the fixture of the vacuum coating machine. Then, the MgF2 ceramic target and the iron target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and the electron beam heating evaporation method is used with the argon ion source to assist the entire process of deposition. The fourth MgF2-Fe layer is deposited on the substrate with the third Ti3O5-Al2O3 layer to prepare a substrate with a fourth MgF2-Fe layer. Step 7: Formation of the substrate with the fifth Ti3O5-C layer: Based on step 6, a substrate with the fourth MgF2-Fe layer is selected. The temperature of the vacuum coating machine cavity is set to 100℃ to stabilize the cavity temperature. The substrate with the fourth MgF2-Fe layer is placed in the fixture of the vacuum coating machine. Then, the Ti3O5 target and carbon target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, and the anode voltage is set to 150V and the anode current to 5A. Electron beam heating evaporation is used, with argon ion source as the full-process flux, to deposit the fifth Ti3O5-C layer on the substrate with the fourth MgF2-Fe layer, thus preparing a substrate with the fifth Ti3O5-C layer. Step 8: Formation of the substrate with the sixth MgF2-Ti layer: Based on step 7, a substrate with the fifth Ti3O5-C layer is selected. The temperature of the vacuum coating machine cavity is set to 100℃ to stabilize the cavity temperature. The substrate with the fifth Ti3O5-C layer is placed in the fixture of the vacuum coating machine. Then, the MgF2 ceramic target and titanium target are placed in the vacuum coating machine, the cavity is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and the electron beam heating evaporation method is used with the argon ion source to assist the entire process of deposition. The sixth MgF2-Ti layer is deposited on the substrate with the fifth Ti3O5-C layer to prepare a substrate with the sixth MgF2-Ti layer. Step 9: Formation of the substrate with the seventh Ti3O5 layer: Based on step 8, a substrate with the sixth MgF2-Ti layer is selected, the temperature of the vacuum coating machine cavity is set to 100℃, the cavity temperature is stabilized, the substrate with the sixth MgF2-Ti layer is placed in the fixture of the vacuum coating machine, and then the Ti3O5 target is placed in the vacuum coating machine. The cavity is sealed and evacuated to the process preset vacuum level. The argon ion source is turned on, the anode voltage is set to 150V, the anode current is 5A, and electron beam heating evaporation is used with argon ion source to assist the entire process. The seventh Ti3O5 layer is deposited on the substrate with the sixth MgF2-Ti layer to prepare a substrate with the seventh Ti3O5 layer. Step 10: Formation of the substrate with the eighth MgF2 layer: Based on step 9, a substrate with the seventh Ti3O5 layer is selected. The vacuum coating machine chamber temperature is set to 100℃ and stabilized. The substrate with the seventh Ti3O5 layer is placed in the fixture of the vacuum coating machine. Then, the MgF2 ceramic target and TiO2 target are placed into the vacuum coating machine, the chamber is sealed, and the vacuum is evacuated to the preset process vacuum level. The argon ion source is turned on, and the anode voltage is set to 150V and the anode current to 5A. Electron beam heating evaporation is used, with argon ion source as the flux throughout the process, to deposit the eighth MgF2 layer on the substrate with the seventh Ti3O5 layer, thus preparing a substrate with the eighth MgF2 layer. At this point, the eighth MgF2 layer contains TiO2 nanoparticles. After removing the remaining MgF2 ceramic target and TiO2 target, or after the MgF2 ceramic target and TiO2 target have been exhausted, continue using an argon ion source, maintaining an anode voltage of 150V and an anode current of 5A, and continuously bombard the surface of the last eighth MgF2 layer with argon gas for 120s. After all film layers have been deposited, maintain the vacuum chamber at a constant temperature for static annealing to eliminate internal stress in the film layers. The vacuum annealing temperature is 120℃, and the annealing holding time is 30-60min, which effectively improves the density and aging resistance of the film layers. Then, cool the chamber to room temperature to stabilize the film layer structure, remove the workpiece, and inspect it. This process is used to prepare the black-plated structure of the lens gasket.

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