System for delivering a precursor and related methods

Abstract

A system for delivering a precursor and related methods are provided. The system includes at least one first container, at least one second container, at least one deposition chamber, a first conduit connecting the at least one first container to the at least one second container, and a second conduit connecting the at least one second container to the at least one deposition chamber. The first conduit is configured for delivering a vaporized precursor at a first temperature from the at least one first container to the at least one second container. The second conduit is configured for delivering the vaporized precursor at a second temperature from the at least one second container to the at least one deposition chamber. The first temperature is lower than the second temperature.

Description

Technical Field

[0001] This disclosure relates to systems and methods for delivering precursors.

[0002] Cross-reference to related applications

[0003] This application claims the right to U.S. Provisional Patent Application No. 63 / 621,907, filed January 17, 2024, pursuant to 35 USC 119, the entire contents of which are incorporated herein by reference. Background Technology

[0004] Vapor deposition processes may involve delivering a precursor to a tool. At the tool, the precursor is deposited onto a substrate. Summary of the Invention

[0005] Some embodiments relate to a system. In some embodiments, the system includes at least one first container. In some embodiments, the system includes at least one second container. In some embodiments, the system includes at least one deposition chamber. In some embodiments, the system includes a first conduit connecting the at least one first container to the at least one second container. In some embodiments, the system includes a second conduit connecting the at least one second container to the at least one deposition chamber. In some embodiments, the first conduit is configured to deliver a vaporization precursor at a first temperature from the at least one first container to the at least one second container. In some embodiments, the second conduit is configured to deliver the vaporization precursor at a second temperature from the at least one second container to the at least one deposition chamber. In some embodiments, the first temperature is lower than the second temperature.

[0006] Some embodiments relate to a system. In some embodiments, the system includes at least one first container. In some embodiments, the system includes at least one second container. In some embodiments, the system includes at least one deposition chamber. In some embodiments, the system includes a first conduit connecting the at least one first container to the at least one second container. In some embodiments, the system includes a second conduit connecting the at least one second container to the at least one deposition chamber. In some embodiments, the first conduit is configured to deliver a vaporization precursor from the at least one first container to the at least one second container at a first pressure. In some embodiments, the second conduit is configured to deliver the vaporization precursor from the at least one second container to the at least one deposition chamber at a second pressure. In some embodiments, the first pressure is less than the second pressure.

[0007] Some embodiments relate to a method. In some embodiments, the method includes vaporizing a precursor in a first container located in a region outside a manufacturing region to obtain a first vaporized precursor. In some embodiments, the method includes transporting the first vaporized precursor through a first conduit to a second container located in a region of the manufacturing region at a first temperature. In some embodiments, the method includes condensing the first vaporized precursor in the second container to obtain a solid precursor. In some embodiments, the method includes vaporizing the solid precursor in the second container to obtain a second vaporized precursor. In some embodiments, the method includes transporting the second vaporized precursor through a second conduit to at least one deposition chamber located in a region of the manufacturing region at a second temperature. Attached Figure Description

[0008] Referring to the accompanying drawings, some embodiments of this disclosure are described herein by way of example only. Detailed reference is now made to the drawings, and it should be emphasized that the illustrated embodiments are by way of example and for illustrative purposes regarding embodiments of this disclosure. In this regard, the description taken in conjunction with the drawings will enable those skilled in the art to understand how to practice the embodiments of this disclosure.

[0009] Figure 1 This is a schematic diagram of a system according to some embodiments.

[0010] Figure 2 This is a flowchart of a method according to some embodiments.

[0011] Figure 3 This is a schematic diagram of a system according to some embodiments.

[0012] Figure 4 This is a schematic diagram of a system according to some embodiments.

[0013] Figure 5 This is a schematic diagram of a system according to some embodiments. Detailed Implementation

[0014] Other objects and advantages of this disclosure will become apparent from the following description taken in conjunction with the accompanying drawings, amidst the disclosed benefits and improvements. Detailed embodiments of this disclosure are disclosed herein; however, it should be understood that the disclosed embodiments are merely examples of this disclosure that may be embodied in various forms. Furthermore, each of the examples given with respect to the various embodiments of this disclosure is intended to be illustrative rather than restrictive.

[0015] The entire contents of any prior patents and publications referenced herein are incorporated herein by reference.

[0016] Throughout this specification and claims, the following terms shall have the meaning explicitly associated herein unless the context clearly requires otherwise. The phrases “in one embodiment,” “in an embodiment,” and “in some embodiments” as used herein do not necessarily refer to the same embodiment, but may refer to the same embodiment. Similarly, the phrases “in another embodiment” and “in some other embodiments” as used herein do not necessarily refer to different embodiments, but may refer to different embodiments. All embodiments of this disclosure may be combined without departing from the scope or spirit of this disclosure.

[0017] As used herein, the term "based on" is non-exclusive and allows for consideration of additional factors not described unless the context clearly indicates otherwise. Furthermore, throughout the specification, the meanings of "a" and "described" include plural pronouns. The meaning of "in" includes both "in" and "on".

[0018] Precursors stored outside the manufacturing area are transported along long heated gas pipelines, or more generally, conduits, to the manufacturing area containing the deposition chamber. The conditions (e.g., temperature and / or pressure and / or flow rate) under which precursors are transported from outside the manufacturing area to the manufacturing area (e.g., to the deposition chamber) via conduits can lead to corrosion and particulate generation, thereby increasing overall maintenance requirements for the conduits and systems, and introducing unwanted impurities into the precursor vapor. These conditions may also require more instrumentation and control to maintain the temperature along the length of the conduit to prevent, for example, unwanted condensation and / or unwanted thermal decomposition of the precursor, thus significantly increasing costs.

[0019] Some of the embodiments provided herein overcome at least these challenges by providing systems and related methods that allow operation at lower temperatures and / or lower pressures and / or other conditions (e.g., flow rates), thereby minimizing the negative impacts derived from conventional systems and methods. Together, the systems and methods provided herein minimize or avoid the generation of unwanted particles, while also extending the lifespan of systems used for delivering precursors (e.g., from outside the manufacturing area to the manufacturing area or to tools located within the manufacturing area). Additionally, in some embodiments, when the conduits are not used to deliver precursor vapors from containers for operation / refilling of containers and / or tools at the manufacturing area, these long conduits can be evacuated or purged with inert gas.

[0020] Systems and methods for delivering precursors are provided. The precursors can be used in deposition processes. Examples of deposition processes include, but are not limited to, at least one of the following: chemical vapor deposition (CVD), digital or pulsed chemical vapor deposition, plasma-enhanced cyclic chemical vapor deposition (PECCVD), flowable chemical vapor deposition (FCVD), atomic layer deposition (ALD), thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD), metal-organic chemical vapor deposition (MOCVD), and plasma-enhanced chemical vapor deposition (PECVD), or any combination thereof.

[0021] The precursor can exist in a solid or liquid phase and can be vaporized (e.g., by heating) to obtain a vaporized precursor. In some embodiments, the precursor includes dimethylhydrazine, trimethylaluminum (TMA), hafnium chloride (HfCl4), zirconium chloride (ZrCl4), indium trichloride, indium monochloride, aluminum trichloride, titanium iodide, carbonyl tungsten, Ba(DPM)2, strontium dipentanoylmethane (Sr(DPM)2), TiO(DPM)2, zirconium tetradipentanoylmethane (Zr(DPM)4), decaborane, octadecoborane, boron-containing precursors, indium-containing precursors, antimony-containing precursors, phosphorus-containing precursors, arsenic-containing precursors, precursors with alkyl amidine ligands, organometallic precursors, alkaline earth metal-RCp2, Sc-RCp3, γ-RCp3. Lanthanides - RCp3, zirconium tert-butoxide (Zr(t-OBu)4), tetradiethylaminozirconium (Zr(NEt2)4), tetradiethylaminohafnium (Hf(NEt2)4), tetradimethylaminotitanium (TDMAT), tert-butyliminotris(diethylamine)tantalum (TBTDET), penta(dimethylamine)tantalum (PDMAT), penta(ethylmethylamine)tantalum (PEMAT), tetradimethylaminozirconium (Zr(NMe2)4), tributanol hafnium (Hf(tOBu)4), xenon difluoride (XeF2), xenon tetrafluoride (XeF4), xenon hexafluoride (XeF6), or any combination thereof.

[0022] In some embodiments, the precursor includes at least one of or any combination thereof, such as decborane, hafnium tetrachloride, zirconium tetrachloride, indium trichloride, organometallic β-diketone complexes, cyclopentadienylcycloheptadienyltitanium (CpTiCht), aluminum trichloride, titanium iodide, cyclooctatetraenylcyclopentadienyltitanium, dicyclopentadienyltitanium dinitride, trimethylgallium, trimethylindium, alkylaluminum (e.g., trimethylaluminum, triethylaluminum, trimethylaminealuminane), dimethylzinc, tetramethyltin, trimethylantimony, diethylcadmium, and tungsten carbonate.

[0023] In some embodiments, the precursor comprises at least one of elemental metals, metal halides, metal oxyhalides, organometallic complexes, or any combination thereof. For example, in some embodiments, the precursor material comprises at least one of elemental boron, copper, phosphorus, decaborane, gallium halide, indium halide, antimony halide, arsenic halide, gallium halide, aluminum iodide, titanium iodide, MoO2Cl2, MoOCl4, MoCl5, WCl5, WOCl4, WCl6, cyclopentadienylcycloheptanetrienyl titanium (CpTiCht), cyclooctatetraenylcyclopentadienyl titanium, dicyclopentadienyl titanium-diazide, In(CH3)2(hfac), dibromomethylantimony, carbonyltungsten, organometallic β-diketone complexes, organometallic alkoxide complexes, organometallic aryl complexes, organometallic amide complexes, or any combination thereof, consisting of or substantially consisting of, or selected from the group consisting of, such as boron, copper, phosphorus, decaborane, gallium halide, indium halide, indium oxotrienyl ...

[0024] In some embodiments, the precursor comprises at least one of any type of source material that can be liquefied by heating or dissolving in a solvent, including (e.g., but not limited to) decborane, (B 10 H 14 ), pentoborane (B5H9), octadecoborane (B 18 H 22 The precursor comprises at least one of boric acid (H3BO3), SbCl3, SbCl5, or any combination thereof. In some embodiments, the precursor includes AsCl3, AsBr3, AsF3, AsF5, As4O6, As2Se3m, As2S2, As2S3, As2S5, As2Te3, B4H 11 B4H 10 , B3H6N3, BBr3, BCl3, BF3.O(C2H5)2, BF3.HOCH3, B2H6, GeBr4, GeCl4, GeF4, GeH4, SiHCl3, SiCl4, SiH3Cl, Br2, BrF5, COCl2, COF2, Ni(CO)4, C8H 24 O4Si4, PH3, POCl3, PCl5, PF3, PFS, SbH3, SF4, Si(OC2H5)4, C4H 16 At least one of Si4O4, Si(CH3)4, SiH(CH3)3, TiCl4, WOF4, TaBr5, TaCl5, TaF5, Sb(C2H5)3, Sb(CH3)3, In(CH3)3, PBr5, PBr3, RuF5, or any combination thereof.

[0025] Figure 1 These are schematic diagrams of a system according to some embodiments. For example... Figure 1As shown, in some embodiments, system 100 includes at least one first container 10, at least one second container 20, and at least one deposition chamber 30. System 100 includes a first conduit 50 connecting at least one first container 10 to at least one second container 20. System 100 includes a second conduit 60 connecting at least one second container 20 to at least one deposition chamber 30. Figure 1 As shown, in some embodiments, at least one second container and at least one deposition chamber 30 are located in a manufacturing area 70 (e.g., a "manufacturing plant"). In some embodiments, at least one first container 10 is located in a non-manufacturing area 80 (e.g., an area outside the manufacturing area, or a "sub-manufacturing plant"). In other embodiments, at least one second container is located in a non-manufacturing area, wherein at least one second container is closer to the deposition chamber than at least one first container.

[0026] At least one first container 10 may contain a precursor. In some embodiments, at least one first container 10 is configured to store the precursor. In some embodiments, at least one first container 10 is configured to vaporize the precursor to obtain a vaporized precursor. In some embodiments, at least one first container 10 is configured to deliver the vaporized precursor to a first conduit 50 for delivery to at least one second container 20. In some embodiments, at least one second container 20 is configured to receive the vaporized precursor from the first conduit 50 and at least one first container 10. In some embodiments, when vapor is received through the first conduit 50, the vapor is recondensed in the second container 20. In some embodiments, at least one second container 20 is configured to store the precursor in a solid phase or a gas / vapor phase. In some embodiments, at least one second container 20 is configured to vaporize the precursor to obtain a vaporized precursor. In some embodiments, at least one second container 20 is configured to deliver the vaporized precursor to a second conduit 60 for transport to at least one deposition chamber 30.

[0027] At least one first container 10 may be configured to vaporize the precursor to obtain a vaporized precursor. For example, in some embodiments, at least one first container 10 is configured to heat the precursor to a temperature of 50°C to 200°C, or any range or subrange of temperature between 50°C and 200°C. For example, in some embodiments, at least one first container 10 is configured to heat the precursor to 50°C to 190°C, 50°C to 180°C, 50°C to 170°C, 50°C to 160°C, 50°C to 150°C, 50°C to 140°C, 50°C to 130°C, 50°C to 120°C, 50°C to 110°C, 50°C to 100°C, 50°C to 90°C, 50°C to 80°C, 50°C to 70°C, 50°C to 60°C, 60°C to 200°C, 70°C to 200°C, 80°C to 200°C, 90°C to 200°C, 100°C to 200°C, or 110°C. Temperatures of 200℃, 120℃ to 200℃, 130℃ to 200℃, 140℃ to 200℃, 150℃ to 200℃, 160℃ to 200℃, 170℃ to 200℃, 180℃ to 200℃, or 190℃ to 200℃.

[0028] In some embodiments, at least one first container 10 is configured to vaporize the precursor at a pressure range or subrange of 0.1 Torr to 600 Torr or between 0.1 Torr and 600 Torr.In some embodiments, at least one first container 10 is configured to operate at pressures of 0.1 Torr to 290 Torr, 0.1 Torr to 280 Torr, 0.1 Torr to 270 Torr, 0.1 Torr to 260 Torr, 0.1 Torr to 250 Torr, 0.1 Torr to 240 Torr, 0.1 Torr to 230 Torr, 0.1 Torr to 220 Torr, 0.1 Torr to 210 Torr, 0.1 Torr to 200 Torr, 0.1 Torr to 190 Torr, 0.1 Torr to 180 Torr, 0.1 Torr to 170 Torr, 0.1 Torr to 160 Torr, 0.1 Torr to 150 Torr, 0.1 Torr to 140 Torr, 0.1 Torr to 130 Torr, 0.1 Torr to 120 Torr, 0.1 Torr to 110 Torr, 0.1 Torr to 100 Torr, 0.1 Torr to 90 Torr, 0.1 Torr to 80 Torr, 0.1 Torr to 70 Torr, 0.1 Torr to 60 Torr, 0.1 Torr to 50 Torr, 0.1 Torr to 40 Torr, 0.1 Torr to 30 Torr, 0.1 Torr to 20 Torr, 0.1 Torr to 10 Torr, 0.1 Torr to 9 Torr, 0.1 Torr to 8 Torr, 0.1 Torr to 7 Torr, 0.1 Torr to 6 Torr, 0.1 Torr to 5 Torr, 0.1 Torr to 4 Torr, 0.1 Torr to 3 Torr, 0.1 Torr to 2 Torr, 0.1 Torr to 1 Torr, 1 Torr to 300 Torr, 10 Torr to 50 Torr, 20 Torr to 300 Torr, 30 Vaporized precursors under pressures of Torr to 300 Torr, 40 Torr to 300 Torr, 50 Torr to 300 Torr, 60 Torr to 300 Torr, 70 Torr to 300 Torr, 80 Torr to 300 Torr or 90 Torr to 300 Torr, 100 Torr to 300 Torr, 150 Torr to 300 Torr, 200 Torr to 300 Torr or 250 Torr to 300 Torr.

[0029] In some embodiments, at least one first container 10 is configured to operate at pressures of 0.1 Torr to 600 Torr, 0.1 Torr to 590 Torr, 0.1 Torr to 580 Torr, 0.1 Torr to 570 Torr, 0.1 Torr to 560 Torr, 0.1 Torr to 550 Torr, 0.1 Torr to 540 Torr, 0.1 Torr to 530 Torr, 0.1 Torr to 520 Torr, 0.1 Torr to 510 Torr, 0.1 Torr to 500 Torr, 0.1 Torr to 490 Torr, 0.1 Torr to 480 Torr, 0.1 Torr to 470 Torr, 0.1 Torr to 460 Torr, 0.1 Torr to 450 Torr, 0.1 Torr to 440 Torr, 0.1 Torr to 430 Torr, 0.1 Torr to 420 Torr, 0.1 Torr to 410 Torr, 0.1 Torr to 400 Torr, 0.1 Torr to 490 Torr, 0.1 Torr to 480 Torr, 0.1 Torr to 470 Torr, 0.1 Torr to 460 Torr, 0.1 Torr to 450 Torr, 0.1 Torr to 440 Torr, 0.1 Torr to 430 Torr, 0.1 Torr to 420 Torr, 0.1 Torr to 410 Torr, 0.1 Torr to 400 Torr, 0.1 Torr to 390 Torr, 0.1 Torr to 380 Torr, 0.1 Torr to 370 Torr, 0.1 Torr to 360 Torr, 0.1 Torr to 350 Torr, 0.1 Torr to 340 Torr, 0.1 Torr to 330 Torr, 0.1 Torr to 320 Torr, 0.1 Torr to 310 Torr The precursor vaporizes at pressures ranging from 0.1 Torr to 300 Torr.

[0030] In some embodiments, at least one first container 10 is configured to operate at speeds of 300 Torr to 600 Torr, 310 Torr to 600 Torr, 320 Torr to 600 Torr, 330 Torr to 600 Torr, 340 Torr to 600 Torr, 350 Torr to 600 Torr, 360 Torr to 600 Torr, 370 Torr to 600 Torr, 380 Torr to 600 Torr, 390 Torr to 600 Torr, 400 Torr to 600 Torr, 410 Torr to 600 Torr, 420 Torr to 600 Torr, 430 Torr to 600 Torr, 440 Torr to 600 Torr, 450 Torr to 600 Torr, 460 Torr to 600 Torr, 470 Torr to 600 Torr, 480 Torr to 600 Torr, 490 Torr to 600 Torr. Vaporized precursors at pressures of Torr to 600 Torr, 500 Torr to 600 Torr, 510 Torr to 600 Torr, 520 Torr to 600 Torr, 530 Torr to 600 Torr, 540 Torr to 600 Torr, 550 Torr to 600 Torr, 560 Torr to 600 Torr, 570 Torr to 600 Torr, 580 Torr to 600 Torr, or 590 Torr to 600 Torr.

[0031] At least one second container 20 may be configured to condense and vaporize the precursor for storage. In some embodiments, at least one second container 20 is configured to cool the precursor to a temperature range or subrange between 0°C and 100°C. In some embodiments, at least one second container 20 is configured to cool the precursor to temperatures of 0°C to 90°C, 0°C to 80°C, 0°C to 70°C, 0°C to 60°C, 0°C to 50°C, 0°C to 40°C, 0°C to 30°C, 0°C to 20°C, 0°C to 10°C, 10°C to 100°C, 20°C to 100°C, 30°C to 100°C, 40°C to 100°C, 50°C to 100°C, 60°C to 100°C, 70°C to 100°C, 80°C to 100°C, or 90°C to 100°C.

[0032] At least one second container 20 may be configured to vaporize the precursor to obtain a vaporized precursor. In some embodiments, at least one second container 20 is configured to heat the precursor to a temperature range or subrange of 100°C to 300°C or between 100°C and 300°C. In some embodiments, at least one second container 20 is configured to heat the precursor to 100°C to 290°C, 100°C to 280°C, 100°C to 270°C, 100°C to 260°C, 100°C to 250°C, 100°C to 240°C, 100°C to 230°C, 100°C to 220°C, 100°C to 210°C, 100°C to 200°C, 100°C to 190°C, 100°C to 180°C, 100°C to 170°C, 100°C to 160°C, 100°C to 150°C, 100°C to 140°C, 100°C to 130°C, 100°C to 120°C. Temperatures ranging from 0℃ to 100℃ to 110℃, 110℃ to 300℃, 120℃ to 300℃, 130℃ to 300℃, 140℃ to 300℃, 150℃ to 300℃, 160℃ to 300℃, 170℃ to 300℃, 180℃ to 300℃, 190℃ to 300℃, 200℃ to 300℃, 210℃ to 300℃, 220℃ to 300℃, 230℃ to 300℃, 240℃ to 300℃, 250℃ to 300℃, 260℃ to 300℃, 270℃ to 300℃, 280℃ to 300℃, or 290℃ to 300℃.

[0033] In some embodiments, at least one second container 20 is configured to condense the precursor at pressures ranging from 0.1 Torr to 600 Torr or any range or subrange between 0.1 Torr and 600 Torr.In some embodiments, at least one second container 20 is configured to operate at pressures of 0.1 Torr to 290 Torr, 0.1 Torr to 280 Torr, 0.1 Torr to 270 Torr, 0.1 Torr to 260 Torr, 0.1 Torr to 250 Torr, 0.1 Torr to 240 Torr, 0.1 Torr to 230 Torr, 0.1 Torr to 220 Torr, 0.1 Torr to 210 Torr, 0.1 Torr to 200 Torr, 0.1 Torr to 190 Torr, 0.1 Torr to 180 Torr, 0.1 Torr to 170 Torr, 0.1 Torr to 160 Torr, 0.1 Torr to 150 Torr, 0.1 Torr to 140 Torr, 0.1 Torr to 130 Torr, 0.1 Torr to 120 Torr, 0.1 Torr to 110 Torr, 0.1 Torr to 100 Torr, 0.1 Torr to 90 Torr, 0.1 Torr to 80 Torr, 0.1 Torr to 70 Torr, 0.1 Torr to 60 Torr, 0.1 Torr to 50 Torr, 0.1 Torr to 40 Torr, 0.1 Torr to 30 Torr, 0.1 Torr to 20 Torr, 0.1 Torr to 10 Torr, 0.1 Torr to 9 Torr, 0.1 Torr to 8 Torr, 0.1 Torr to 7 Torr, 0.1 Torr to 6 Torr, 0.1 Torr to 5 Torr, 0.1 Torr to 4 Torr, 0.1 Torr to 3 Torr, 0.1 Torr to 2 Torr, 0.1 Torr to 1 Torr, 1 Torr to 300 Torr, 10 Torr to 50 Torr, 20 Torr to 300 Torr, 30 Precursors condense under pressures ranging from 300 Torr to 40 Torr to 300 Torr, 50 Torr to 300 Torr, 60 Torr to 300 Torr, 70 Torr to 300 Torr, 80 Torr to 300 Torr or 90 Torr to 300 Torr, 100 Torr to 300 Torr, 150 Torr to 300 Torr, 200 Torr to 300 Torr or 250 Torr to 300 Torr.

[0034] In some embodiments, at least one second container 20 is configured to vaporize the precursor at any range or subrange of pressure between 0.1 Torr and 600 Torr.In some embodiments, at least one second container 20 is configured to operate at pressures of 0.1 Torr to 290 Torr, 0.1 Torr to 280 Torr, 0.1 Torr to 270 Torr, 0.1 Torr to 260 Torr, 0.1 Torr to 250 Torr, 0.1 Torr to 240 Torr, 0.1 Torr to 230 Torr, 0.1 Torr to 220 Torr, 0.1 Torr to 210 Torr, 0.1 Torr to 200 Torr, 0.1 Torr to 190 Torr, 0.1 Torr to 180 Torr, 0.1 Torr to 170 Torr, 0.1 Torr to 160 Torr, 0.1 Torr to 150 Torr, 0.1 Torr to 140 Torr, 0.1 Torr to 130 Torr, 0.1 Torr to 120 Torr, 0.1 Torr to 110 Torr, 0.1 Torr to 100 Torr, 0.1 Torr to 90 Torr, 0.1 Torr to 80 Torr, 0.1 Torr to 70 Torr, 0.1 Torr to 60 Torr, 0.1 Torr to 50 Torr, 0.1 Torr to 40 Torr, 0.1 Torr to 30 Torr, 0.1 Torr to 20 Torr, 0.1 Torr to 10 Torr, 0.1 Torr to 9 Torr, 0.1 Torr to 8 Torr, 0.1 Torr to 7 Torr, 0.1 Torr to 6 Torr, 0.1 Torr to 5 Torr, 0.1 Torr to 4 Torr, 0.1 Torr to 3 Torr, 0.1 Torr to 2 Torr, 0.1 Torr to 1 Torr, 1 Torr to 300 Torr, 10 Torr to 50 Torr, 20 Torr to 300 Torr, 30 Vaporized precursors under pressures of Torr to 300 Torr, 40 Torr to 300 Torr, 50 Torr to 300 Torr, 60 Torr to 300 Torr, 70 Torr to 300 Torr, 80 Torr to 300 Torr or 90 Torr to 300 Torr, 100 Torr to 300 Torr, 150 Torr to 300 Torr, 200 Torr to 300 Torr or 250 Torr to 300 Torr.

[0035] In some embodiments, at least one second container 20 is configured to operate at pressures of 0.1 Torr to 600 Torr, 0.1 Torr to 590 Torr, 0.1 Torr to 580 Torr, 0.1 Torr to 570 Torr, 0.1 Torr to 560 Torr, 0.1 Torr to 550 Torr, 0.1 Torr to 540 Torr, 0.1 Torr to 530 Torr, 0.1 Torr to 520 Torr, 0.1 Torr to 510 Torr, 0.1 Torr to 500 Torr, 0.1 Torr to 490 Torr, 0.1 Torr to 480 Torr, 0.1 Torr to 470 Torr, 0.1 Torr to 460 Torr, 0.1 Torr to 450 Torr, 0.1 Torr to 440 Torr, 0.1 Torr to 430 Torr, 0.1 Torr to 420 Torr, 0.1 Torr to 410 Torr, 0.1 Torr to 400 Torr, 0.1 Torr to 490 Torr, 0.1 Torr to 480 Torr, 0.1 Torr to 470 Torr, 0.1 Torr to 460 Torr, 0.1 Torr to 450 Torr, 0.1 Torr to 440 Torr, 0.1 Torr to 430 Torr, 0.1 Torr to 420 Torr, 0.1 Torr to 410 Torr, 0.1 Torr to 400 Torr, 0.1 Torr to 390 Torr, 0.1 Torr to 380 Torr, 0.1 Torr to 370 Torr, 0.1 Torr to 360 Torr, 0.1 Torr to 350 Torr, 0.1 Torr to 340 Torr, 0.1 Torr to 330 Torr, 0.1 Torr to 320 Torr, 0.1 Torr to 310 Torr Precursors vaporization and / or condensation at pressures ranging from 0.1 Torr to 300 Torr.

[0036] In some embodiments, the at least one second container 20 is configured to operate at speeds of 300 Torr to 600 Torr, 310 Torr to 600 Torr, 320 Torr to 600 Torr, 330 Torr to 600 Torr, 340 Torr to 600 Torr, 350 Torr to 600 Torr, 360 Torr to 600 Torr, 370 Torr to 600 Torr, 380 Torr to 600 Torr, 390 Torr to 600 Torr, 400 Torr to 600 Torr, 410 Torr to 600 Torr, 420 Torr to 600 Torr, 430 Torr to 600 Torr, 440 Torr to 600 Torr, 450 Torr to 600 Torr, 460 Torr to 600 Torr, 470 Torr to 600 Torr, 480 Torr to 600 Torr, 490 Torr to 600 Torr. Precursors vaporization and / or condensation under pressures of Torr to 600 Torr, 500 Torr to 600 Torr, 510 Torr to 600 Torr, 520 Torr to 600 Torr, 530 Torr to 600 Torr, 540 Torr to 600 Torr, 550 Torr to 600 Torr, 560 Torr to 600 Torr, 570 Torr to 600 Torr, 580 Torr to 600 Torr, or 590 Torr to 600 Torr.

[0037] The at least one deposition chamber may be configured to receive vaporized precursors at a deposition temperature and / or deposition pressure. The deposition temperature may be from 200°C to 2500°C. In some embodiments, the deposition temperature may be from 500°C to 700°C. For example, in some embodiments, the deposition temperature may be 500°C to 680°C, 500°C to 660°C, 500°C to 640°C, 500°C to 620°C, 500°C to 600°C, 500°C to 580°C, 500°C to 560°C, 500°C to 540°C, 500°C to 520°C, 520°C to 700°C, 540°C to 700°C, 560°C to 700°C, 580°C to 700°C, 600°C to 700°C, 620°C to 700°C, 640°C to 700°C, 660°C to 700°C, or 680°C to 700°C. In other embodiments, the deposition temperature may be greater than 200°C to 2500°C, for example (but not limited to) 400℃ to 2000℃, 500℃ to 2000℃, 550℃ to 2400℃, 600℃ to 2400℃, 625℃ to 2400℃, 650℃ to 2400℃, 675℃ to 2400℃, 700℃ to 2400℃, 725℃ to 2400℃, 750℃ to 2400℃, 775℃ to 2400℃, 800℃ to 2400℃, 825℃ to 2400℃ 850℃ to 2400℃, 875℃ to 2400℃, 900℃ to 2400℃, 925℃ to 2400℃, 950℃ to 2400℃, 975℃ to 2400℃, 1000℃ to 2400℃, 1025℃ to 2400℃, 1050℃ to 2400℃, 1075℃ to 2400℃, 1100℃ to 2400℃, 1200℃ to 2400℃, 130℃ 0℃ to 2400℃, 1400℃ to 2400℃, 1500℃ to 2400℃, 1600℃ to 2400℃, 1700℃ to 2400℃, 1800℃ to 2400℃, 1900℃ to 2400℃, 2000℃ to 2400℃, 2100℃ to 2400℃, 2200℃ to 2400℃, 2300℃ to 2400℃, 500℃ to 2000℃, 50 Temperatures from 0°C to 1900°C, 500°C to 1800°C, 500°C to 1700°C, 500°C to 1600°C, 500°C to 1500°C, 500°C to 1400°C, 500°C to 1300°C, 500°C to 1200°C, 500°C to 1100°C, 500°C to 1000°C, 500°C to 1000°C, 500°C to 900°C, or 500°C to 800°C.

[0038] The deposition pressure can be from 0.001 Torr to 600 Torr. For example, in some embodiments, the deposition pressure can be from 1 Torr to 30 Torr, 1 Torr to 25 Torr, 1 Torr to 20 Torr, 1 Torr to 15 Torr, 1 Torr to 10 Torr, 5 Torr to 50 Torr, 5 Torr to 40 Torr, 5 Torr to 30 Torr, 5 Torr to 20 Torr, or 5 Torr to 15 Torr. In other embodiments, the deposition pressure may be 1 Torr to 100 Torr, 5 Torr to 100 Torr, 10 Torr to 100 Torr, 15 Torr to 100 Torr, 20 Torr to 100 Torr, 25 Torr to 100 Torr, 30 Torr to 100 Torr, 35 Torr to 100 Torr, 40 Torr to 100 Torr, 45 Torr to 100 Torr, 50 Torr to 100 Torr, 55 Torr to 100 Torr, 60 Torr to 100 Torr, 65 Torr to 100 Torr, 70 Torr to 100 Torr, 75 Torr to 100 Torr, 80 Torr to 100 Torr, 85 Torr to 100 Torr, 90 Torr to 100 Torr, 95 Torr to 100 Torr, 1 Torr to 95 Torr, 1 Torr to 90 Torr, 1 Pressures ranging from 1 to 85 Torr, 1 to 80 Torr, 1 to 75 Torr, or 1 to 70 Torr. In other further embodiments, the deposition pressure may be 1 mTorr to 100 mTorr, 1 mTorr to 90 mTorr, 1 mTorr to 80 mTorr, 1 mTorr to 70 mTorr, 1 mTorr to 60 mTorr, 1 mTorr to 50 mTorr, 1 mTorr to 40 mTorr, 1 mTorr to 30 mTorr, 1 mTorr to 20 mTorr, 1 mTorr to 10 mTorr, 100 mTorr to 300 mTorr, 150 mTorr to 300 mTorr, 200 mTorr to 300 mTorr, or 150 mTorr to 250 mTorr or 150 mTorr to 225 mTorr.

[0039] In some embodiments, the deposition pressure may be 0.1 Torr to 600 Torr, 0.1 Torr to 590 Torr, 0.1 Torr to 580 Torr, 0.1 Torr to 570 Torr, 0.1 Torr to 560 Torr, 0.1 Torr to 550 Torr, 0.1 Torr to 540 Torr, 0.1 Torr to 530 Torr, 0.1 Torr to 520 Torr, 0.1 Torr to 510 Torr, 0.1 Torr to 500 Torr, 0.1 Torr to 490 Torr, 0.1 Torr to 480 Torr, 0.1 Torr to 470 Torr, 0.1 Torr to 460 Torr, 0.1 Torr to 450 Torr, 0.1 Torr to 440 Torr, 0.1 Torr to 430 Torr, 0.1 Torr to 420 Torr, 0.1 Torr to 410 Torr. Torr, 0.1 Torr to 400 Torr, 0.1 Torr to 490 Torr, 0.1 Torr to 480 Torr, 0.1 Torr to 470 Torr, 0.1 Torr to 460 Torr, 0.1 Torr to 450 Torr, 0.1 Torr to 440 Torr, 0.1 Torr to 430 Torr, 0.1 Torr to 420 Torr, 0.1 Torr to 410 Torr, 0.1 Torr to 400 Torr, 0.1 Torr to 390 Torr, 0.1 Torr to 380 Torr, 0.1 Torr to 370 Torr, 0.1 Torr to 360 Torr, 0.1 Torr to 350 Torr, 0.1 Torr to 340 Torr, 0.1 Torr to 330 Torr, 0.1 Torr to 320 Torr, 0.1 Torr to 310 Torr, 0.1 Torr to 300 Torr, 0.1 Torr to 290 Torr, 0.1 Torr to 280 Torr, 0.1 Torr to 270 Torr, 0.1 Torr to 260 Torr, 0.1 Torr to 250 Torr, 0.1 Torr to 240 Torr, 0.1 Torr to 230 Torr, 0.1 Torr to 220 Torr, 0.1 Torr to 210 Torr, 0.1 Torr to 200 Torr, 0.1 Torr to 190 Torr, 0.1 Torr to 180 Torr, 0.1 Torr to 170 Torr, 0.1 Torr to 160 Torr, 0.Pressure ranges from 1 Torr to 150 Torr, 0.1 Torr to 140 Torr, 0.1 Torr to 130 Torr, 0.1 Torr to 120 Torr, 0.1 Torr to 110 Torr, 0.1 Torr to 100 Torr, 0.1 Torr to 90 Torr, 0.1 Torr to 80 Torr, 0.1 Torr to 70 Torr, 0.1 Torr to 60 Torr, 0.1 Torr to 50 Torr, 0.1 Torr to 40 Torr, 0.1 Torr to 30 Torr, 0.1 Torr to 20 Torr, 0.1 Torr to 10 Torr, 0.1 Torr to 1 Torr, or any range or subrange between 0.1 Torr and 600 Torr.

[0040] In some embodiments, the deposition pressure may be 1 Torr to 600 Torr, 10 Torr to 600 Torr, 20 Torr to 600 Torr, 30 Torr to 600 Torr, 40 Torr to 600 Torr, 50 Torr to 600 Torr, 60 Torr to 600 Torr, 70 Torr to 600 Torr, 80 Torr to 600 Torr, 90 Torr to 600 Torr, 100 Torr to 600 Torr, 110 Torr to 600 Torr, 120 Torr to 600 Torr, 130 Torr to 600 Torr, 140 Torr to 600 Torr, 150 Torr to 600 Torr, 160 Torr to 600 Torr, 170 Torr to 600 Torr, 180 Torr to 600 Torr, 190 Torr to 600 Torr, 200 Torr to 600 Torr. Torr, 210 Torr to 600 Torr, 220 Torr to 600 Torr, 230 Torr to 600 Torr, 240 Torr to 600 Torr, 250 Torr to 600 Torr, 260 Torr to 600 Torr, 270 Torr to 600 Torr, 280 Torr to 600 Torr, 290 Torr to 600 Torr, 300 Torr to 600 Torr, 310 Torr to 600 Torr, 320 Torr to 600 Torr, 330 Torr to 600 Torr, 340 Torr to 600 Torr, 350 Torr to 600 Torr, 360 Torr to 600 Torr, 370 Torr to 600 Torr, 380 Torr to 600 Torr, 390 Torr to 600 Torr, 400 Torr to 600 Torr, 410 Torr to 600 Torr, 420 Torr to 600 Torr, 430 Torr to 600 Torr, 440 Torr to 600 Torr, 450 Torr to 600 Torr, 460 Torr to 600 Torr, 470 Torr to 600 Torr, 480 Torr to 600 Torr, 490 Torr to 600 Torr, 500 Torr to 600 Torr, 510 Torr to 600 Torr, 520 Torr to 600 Torr, 530 Torr to 600 Torr, 540 Torr to 600 Torr, 550 Torr to 600 TorrPressure ranges of 560 Torr to 600 Torr, 570 Torr to 600 Torr, 580 Torr to 600 Torr, 590 Torr to 600 Torr, or any range or subrange between 0.1 Torr and 600 Torr.

[0041] In some embodiments, the deposition temperature and / or deposition pressure of at least one deposition chamber 30 is greater than the temperature and / or pressure of at least one second container 20. In some embodiments, the deposition temperature and / or deposition pressure of at least one deposition chamber 30 is less than the temperature and / or pressure of at least one second container 20. In some embodiments, the temperature and / or pressure of at least one second container 20 is greater than the temperature and / or pressure of at least one first container 10. In some embodiments, the temperature and / or pressure of at least one second container 20 is less than the temperature and / or pressure of at least one first container 10.

[0042] A first conduit may be configured to convey a vaporization precursor from at least one first container to at least one second container at a first temperature. A second conduit may be configured to convey a vaporization precursor from at least one second container to at least one deposition chamber at a second temperature. In some embodiments, the first temperature is lower than the second temperature. In some embodiments, the first temperature is 1% to 99%, 5% to 99%, 10% to 99%, 15% to 99%, 20% to 99%, 25% to 99%, 30% to 99%, 35% to 99%, 40% to 99%, 45% to 99%, 50% to 99%, 55% to 99%, 60% to 99%, 65% to 99%, 70% to 99%, 75% to 99%, or 80% to 99% lower than the second temperature. 85% to 99%, 90% to 99%, 95% to 99%, 5% to 95%, 5% to 90%, 5% to 85%, 5% to 80%, 5% to 75%, 5% to 70%, 5% to 65%, 5% to 60%, 5% to 55%, 5% to 50%, 5% to 45%, 5% to 40%, 5% to 35%, 5% to 30%, 5% to 25%, 5% to 20%, 5% to 15%, or 5% to 10%.

[0043] The first temperature can be any range or subrange of 50°C to 200°C or between 50°C and 200°C. In some embodiments, the first temperature is a temperature of 50°C to 190°C, 50°C to 180°C, 50°C to 170°C, 50°C to 160°C, 50°C to 150°C, 50°C to 140°C, 50°C to 130°C, 50°C to 120°C, 50°C to 110°C, 50°C to 100°C, 50°C to 90°C, 50°C to 80°C, 50°C to 70°C, or 50°C to 60°C. In some embodiments, the first temperature is a temperature of 60°C to 200°C, 70°C to 200°C, 80°C to 200°C, 90°C to 200°C, 100°C to 200°C, 110°C to 200°C, 120°C to 200°C, 130°C to 200°C, 140°C to 200°C, 150°C to 200°C, 160°C to 200°C, 170°C to 200°C, 180°C to 200°C, or 190°C to 200°C. In some embodiments, the first temperature is a first setpoint temperature, wherein the observed temperature in or on the first conduit is within any one or more of the aforementioned ranges. The first setpoint temperature can be any temperature within the range of 50°C to 200°C. In some embodiments, the range of observed temperatures above and below the first setpoint temperature is 5°C, 10°C, 15°C, 20°C, 25°C, or 30°C.

[0044] The second temperature can be any range or subrange of 100°C to 300°C or between 100°C and 300°C. In some embodiments, the second temperature is 100°C to 290°C, 100°C to 280°C, 100°C to 270°C, 100°C to 260°C, 100°C to 250°C, 100°C to 240°C, 100°C to 230°C, 100°C to 220°C, 100°C to 210°C, 100°C to 200°C, 100°C to 190°C, 100°C to 180°C, 100°C to 170°C, 100°C to 160°C, 100°C to 150°C, 100°C to 140°C, 100°C to 130°C, 100°C to 120°C, 100°C to Temperatures ranging from 110°C to 300°C, 120°C to 300°C, 130°C to 300°C, 140°C to 300°C, 150°C to 300°C, 160°C to 300°C, 170°C to 300°C, 180°C to 300°C, 190°C to 300°C, 200°C to 300°C, 210°C to 300°C, 220°C to 300°C, 230°C to 300°C, 240°C to 300°C, 250°C to 300°C, 260°C to 300°C, 270°C to 300°C, 280°C to 300°C, or 290°C to 300°C. In some embodiments, the second temperature is a second set point temperature, wherein the observed temperature in or on the second conduit is within any one or more of the aforementioned ranges. The second setpoint temperature can be any temperature in the range of 100°C to 300°C. In some embodiments, the range of observation temperatures above and below the first setpoint temperature is 5°C, 10°C, 15°C, 20°C, 25°C, 30°C, 35°C, 40°C, or 45°C.

[0045] A first conduit may be configured to deliver a vaporization precursor from at least one first container to at least one second container at a first pressure. A second conduit may be configured to deliver the vaporization precursor from at least one second container to at least one deposition chamber at a second pressure. In some embodiments, the first pressure is less than the second pressure. In some embodiments, the first pressure is 1% to 99%, 5% to 99%, 10% to 99%, 15% to 99%, 20% to 99%, 25% to 99%, 30% to 99%, 35% to 99%, 40% to 99%, 45% to 99%, 50% to 99%, 55% to 99%, 60% to 99%, 65% to 99%, 70% to 99%, 75% to 99%, or 80% to 99% less than the second pressure. 85% to 99%, 90% to 99%, 95% to 99%, 5% to 95%, 5% to 90%, 5% to 85%, 5% to 80%, 5% to 75%, 5% to 70%, 5% to 65%, 5% to 60%, 5% to 55%, 5% to 50%, 5% to 45%, 5% to 40%, 5% to 35%, 5% to 30%, 5% to 25%, 5% to 20%, 5% to 15%, or 5% to 10%.

[0046] The first pressure can be any range or subrange of pressure from 0.1 Torr to 300 Torr or between 0.1 Torr and 300 Torr. In some embodiments, the first pressure is 0.1 Torr to 290 Torr, 0.1 Torr to 280 Torr, 0.1 Torr to 270 Torr, 0.1 Torr to 260 Torr, 0.1 Torr to 250 Torr, 0.1 Torr to 240 Torr, 0.1 Torr to 230 Torr, 0.1 Torr to 220 Torr, 0.1 Torr to 210 Torr, 0.1 Torr to 200 Torr, 0.1 Torr to 190 Torr, 0.1 Torr to 180 Torr, 0.1 Torr to 170 Torr, 0.1 Torr to 160 Torr, 0.1 Torr to 150 Torr, 0.1 Torr to 140 Torr, 0.1 Torr to 130 Torr, 0.1 Torr to 120 Torr, 0.1 Torr to 110 Torr, 0.1 Torr to 100 Torr. Torr, 0.1 Torr to 90 Torr, 0.1 Torr to 80 Torr, 0.1 Torr to 70 Torr, 0.1 Torr to 60 Torr, 0.1 Torr to 50 Torr, 0.1 Torr to 40 Torr, 0.1 Torr to 30 Torr, 0.1 Torr to 20 Torr, 0.1 Torr to 10 Torr, 0.1 Torr to 9 Torr, 0.1 Torr to 8 Torr, 0.1 Torr to 7 Torr, 0.1 Torr to 6 Torr, 0.1 Torr to 5 Torr, 0.1 Torr to 4 Torr, 0.1 Torr to 3 Torr, 0.1 Torr to 2 Torr, 0.1 Torr to 1 Torr, 1 Torr to 300 Torr, 10 Torr to 300 Torr, 10 Torr to 50 Torr, 20 Torr to 300 Torr, 30 Torr to 300 Torr Pressure ranges from 40 Torr to 300 Torr, 50 Torr to 300 Torr, 60 Torr to 300 Torr, 70 Torr to 300 Torr, 80 Torr to 300 Torr or 90 Torr to 300 Torr, 100 Torr to 300 Torr, 150 Torr to 300 Torr, 200 Torr to 300 Torr, and 250 Torr to 300 Torr.In some embodiments, the first pressure is a first setpoint pressure, wherein the observed pressure in or on the first catheter is within any one or more of the aforementioned ranges. The first setpoint pressure may be any pressure in the range of 0.1 Torr to 100 Torr. In some embodiments, the range of observed pressures above and below the first setpoint pressure is 1 Torr, 10 Torr, 15 Torr, 20 Torr, 25 Torr, or 30 Torr.

[0047] The second pressure can be any range or subrange of pressure from 0.1 Torr to 300 Torr or between 0.1 Torr and 300 Torr. In some embodiments, the second pressure is 0.1 Torr to 290 Torr, 0.1 Torr to 280 Torr, 0.1 Torr to 270 Torr, 0.1 Torr to 260 Torr, 0.1 Torr to 250 Torr, 0.1 Torr to 240 Torr, 0.1 Torr to 230 Torr, 0.1 Torr to 220 Torr, 0.1 Torr to 210 Torr, 0.1 Torr to 200 Torr, 0.1 Torr to 190 Torr, 0.1 Torr to 180 Torr, 0.1 Torr to 170 Torr, 0.1 Torr to 160 Torr, 0.1 Torr to 150 Torr, 0.1 Torr to 140 Torr, 0.1 Torr to 130 Torr, 0.1 Torr to 120 Torr, 0.1 Torr to 110 Torr, 0.1 Torr to 100 Torr. Torr, 0.1 Torr to 90 Torr, 0.1 Torr to 80 Torr, 0.1 Torr to 70 Torr, 0.1 Torr to 60 Torr, 0.1 Torr to 50 Torr, 0.1 Torr to 40 Torr, 0.1 Torr to 30 Torr, 0.1 Torr to 20 Torr, 0.1 Torr to 10 Torr, 0.1 Torr to 9 Torr, 0.1 Torr to 8 Torr, 0.1 Torr to 7 Torr, 0.1 Torr to 6 Torr, 0.1 Torr to 5 Torr, 0.1 Torr to 4 Torr, 0.1 Torr to 3 Torr, 0.1 Torr to 2 Torr, 0.1 Torr to 1 Torr, 1 Torr to 300 Torr, 10 Torr to 300 Torr, 20 Torr to 300 Torr, 30 Torr to 300 Torr, 40 Torr to 300 Torr Pressure ranges from 50 Torr to 300 Torr, 60 Torr to 300 Torr, 70 Torr to 300 Torr, 80 Torr to 300 Torr, 90 Torr to 300 Torr, 100 Torr to 300 Torr, 150 Torr to 300 Torr, 200 Torr to 300 Torr, or 250 Torr to 300 Torr.In some embodiments, the second pressure is a second setpoint pressure, wherein the observed pressure in or on the second catheter is within any one or more of the aforementioned ranges. The second setpoint pressure may be any pressure ranging from 0.1 Torr to 100 Torr. In some embodiments, the range of observed pressures above and below the second setpoint pressure is 1 Torr, 10 Torr, 15 Torr, 20 Torr, 25 Torr, or 30 Torr.

[0048] The first catheter may have a length greater than that of the second catheter. For example, in some embodiments, the first catheter has a length that is 1.1 to 100 times the length of the second catheter. In some embodiments, the first catheter has a length that is at least 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, or 3.5 times the length of the second catheter. At least 3.6 times, at least 3.7 times, at least 3.8 times, at least 3.9 times, at least 4 times, at least 4.1 times, at least 4.2 times, at least 4.3 times, at least 4.4 times, at least 4.5 times, at least 4.6 times, at least 4.7 times, at least 4.8 times, at least 4.9 times, at least 5 times, at least 5.5 times, at least 6 times, at least 6.5 times, at least 7 times, at least 7.5 times, at least 8 times, at least 8.5 times, at least 9 times, at least 9.5 times, at least 10 times, at least 20 times, at least 50 times, at least 70 times, at most 100 times the length.

[0049] The flow rate through the first catheter 50 may be in the range of 50 sccm to 1200 sccm, or in any range or subrange between 50 sccm and 1200 sccm. For example, in some embodiments, the flow rate through the first catheter 50 is 50 sccm to 1100 sccm, 50 sccm to 1000 sccm, 50 sccm to 900 sccm, 50 sccm to 800 sccm, 50 sccm to 700 sccm, 50 sccm to 600 sccm, 50 sccm to 500 sccm, 50 sccm to 400 sccm, 50 sccm to 300 sccm, 50 sccm to 200 sccm, 50 sccm to 100 sccm, 100 sccm to 1200 sccm, 200 sccm to 1200 sccm, 300 sccm to 1200 sccm, 400 sccm to 1200 sccm, 500 sccm to 1200 sccm, 600 sccm to 1200 sccm. sccm, 700 sccm to 1200 sccm, 800 sccm to 1200 sccm, 900 sccm to 1200 sccm, 1000 sccm to 1200 sccm or 1100 sccm to 1200 sccm.

[0050] The flow rate through the second catheter 60 may be in the range of 50 sccm to 1200 sccm, or in any range or subrange between 50 sccm and 1200 sccm. For example, in some embodiments, the flow rate through the second catheter 60 is 50 sccm to 1100 sccm, 50 sccm to 1000 sccm, 50 sccm to 900 sccm, 50 sccm to 800 sccm, 50 sccm to 700 sccm, 50 sccm to 600 sccm, 50 sccm to 500 sccm, 50 sccm to 400 sccm, 50 sccm to 300 sccm, 50 sccm to 200 sccm, 50 sccm to 100 sccm, 100 sccm to 1200 sccm, 200 sccm to 1200 sccm, 300 sccm to 1200 sccm, 400 sccm to 1200 sccm, 500 sccm to 1200 sccm, 600 sccm to 1200 sccm. sccm, 700 sccm to 1200 sccm, 800 sccm to 1200 sccm, 900 sccm to 1200 sccm, 1000 sccm to 1200 sccm or 1100 sccm to 1200 sccm.

[0051] In some embodiments, system 100 does not include a carrier gas source. In some embodiments, system 100 is configured to transport a vaporization precursor by extracting a vaporization precursor via a first conduit 50 and / or a second conduit 60. In some embodiments, system 100 further includes, for example, a vacuum or pump sufficient to extract the vaporization precursor via the first conduit 50 and / or the second conduit 60. In some embodiments, system 100 further includes at least one vacuum connected to at least one of the first conduit, the second conduit, or any combination thereof, wherein the at least one vacuum is configured to extract the vaporization precursor via at least one of the first conduit (e.g., from at least one first container 10 to at least one second container 20), the second conduit (e.g., from at least one second container 20 to at least one deposition chamber 30), or any combination thereof.

[0052] In some embodiments, system 100 further includes a plurality of temperature controllers positioned along the length of the first conduit and / or the second conduit. In some embodiments, each of the plurality of temperature controllers is positioned at least 1 foot, 2 feet, 3 feet, 4 feet, 5 feet, 6 feet, 7 feet, 8 feet, 9 feet, 10 feet, 15 feet, 20 feet, or more apart along the length of the first conduit. In some embodiments, each of the plurality of temperature controllers is configured to maintain the first conduit at a first temperature. In some embodiments, the first temperature is a first setpoint temperature. In some embodiments, each of the plurality of temperature controllers is positioned at least 1 foot, 2 feet, 3 feet, 4 feet, 5 feet, 6 feet, 7 feet, 8 feet, 9 feet, 10 feet, 15 feet, 20 feet, or more apart along the length of the second conduit. In some embodiments, each of a plurality of temperature controllers is configured to maintain the second conduit at a second temperature. In some embodiments, the second temperature is a second setpoint temperature. In some embodiments, system 100 unexpectedly requires fewer temperature controllers than a conventional system. In some embodiments, a pressure controller is used in addition to or in lieu of the temperature controllers disclosed herein.

[0053] Figure 2 This is a flowchart of method 200 according to some embodiments. For example... Figure 2 As shown, method 200 includes one or more of the following steps: vaporizing a precursor 202 in a first container; transporting the vaporized precursor from the first container 204 to a second container via a first conduit; condensing the vaporized precursor in the second container 206; vaporizing the precursor in the second container 208; and transporting the vaporized precursor from the second container 210 to a deposition chamber via a second conduit. In some embodiments, method 200 is implemented using any or more of the systems disclosed herein, the entire contents of which are incorporated herein by reference and will not be repeated here for simplicity. In some embodiments, at least one of steps 202, 204, 206, or any combination thereof, includes a “refilling segment.” In some embodiments, at least one of steps 208, 210, or any combination thereof, includes a “running segment.”

[0054] In some embodiments, steps 202, 204, and 206 may be performed continuously as a first segment, which may be referred to as refill. During refill, in some embodiments, at least one first container 10 may be maintained at a temperature below the temperature of the first conduit 50 and above the temperature of the second container 20. In some embodiments, the temperature of the first conduit 50 is higher than the temperature of the first container 10 to prevent condensation in the first conduit 50. In some embodiments, the second container 20 has a lower temperature to facilitate the condensation and storage of the precursor (solid precursor) in the second container 20. In some embodiments, the first conduit 50 may be closed using a valve after the desired amount of material has been transferred to the second container 20. In some embodiments, steps 208 and 210 may then be performed continuously as a second segment, which may be referred to as a run segment. During the run segment, in some embodiments, the temperature of the second container 20 is increased to deliver precursor vapor to the deposition chamber through the second conduit 60. In some embodiments, the temperature of the second conduit 60 is higher than the higher operating temperature of the second container 20 to prevent condensation of the precursor. In some embodiments, the vapor flow from the run / refill to the deposition chamber may be controlled by a mass flow controller (MFC), or may be controlled by a carrier gas supply source 270, such as... Figure 4 The following is currently displayed.

[0055] At step 202, method 200 includes vaporizing a precursor in a first container. In some embodiments, method 200 includes vaporizing a precursor in a first container located in a region outside the manufacturing area to obtain a first vaporized precursor. In some embodiments, vaporization includes sufficiently heating the precursor to obtain a vaporized precursor. In some embodiments, vaporization includes pressurizing or depressurizing a container containing the precursor to a level sufficient to obtain a vaporized precursor. In some embodiments, vaporization includes heating the first container containing the precursor. In some embodiments, vaporization includes heating the precursor by heating the first container. In some embodiments, vaporization includes operating a thermal energy unit. In some embodiments, vaporization includes heating at a temperature sufficient to vaporize the precursor to obtain a vaporized precursor. In some embodiments, vaporization includes heating to a temperature below the decomposition temperature of at least one of the precursor, the vaporized precursor, or any combination thereof. In some embodiments, the precursor may be present in a gaseous phase, in which case this step is optional and not necessary. For example, the precursor may include a vaporized precursor.

[0056] At step 204, method 200 includes conveying a vaporization precursor from a first container to a second container via a first conduit. In some embodiments, method 200 includes transporting a first vaporization precursor to a second container located in a manufacturing area via the first conduit at a first temperature. In some embodiments, transport includes conveying the vaporization precursor from the first container to the second container via the first conduit. In some embodiments, transport includes pumping the vaporization precursor from the first container to the second container via the first conduit. In some embodiments, transport includes extracting the vaporization precursor from the first container (e.g., under vacuum) to the second container via the first conduit. In some embodiments, transport includes allowing the vaporization precursor to flow from the first container to the second container via the first conduit. In some embodiments, transport includes opening the outlet and / or valve of the vaporization precursor from the first container to the second container via the first conduit. In some embodiments, transport includes allowing the vaporization precursor and carrier gas to co-flow from the first container to the second container via the first conduit.

[0057] At step 206, method 200 includes condensing a vaporized precursor in a second container. In some embodiments, method 200 includes condensing a first vaporized precursor in a second container to obtain a solid precursor. In some embodiments, condensation includes cooling the vaporized precursor to a temperature sufficient to condense the vaporized precursor. In some embodiments, condensation includes cooling the second container to a temperature sufficient to condense the vaporized precursor. In some embodiments, condensation includes pressurizing or depressurizing the second container to a pressure sufficient to condense the vaporized precursor. In some embodiments, the temperature and / or pressure sufficient to condense the vaporized precursor is a temperature and / or pressure below the condensation conditions (e.g., temperature and / or pressure) of the vaporized precursor.

[0058] At step 208, method 200 includes vaporizing a precursor in a second container. In some embodiments, method 200 includes vaporizing a solid precursor in a second container to obtain a second vaporized precursor. In some embodiments, vaporization includes sufficiently heating the precursor to obtain a vaporized precursor. In some embodiments, vaporization includes pressurizing or depressurizing a container containing the precursor to a level sufficient to obtain a vaporized precursor. In some embodiments, vaporization includes heating a second container containing the precursor. In some embodiments, vaporization includes heating the precursor by heating the second container. In some embodiments, vaporization includes operating a thermal energy unit. In some embodiments, vaporization includes heating at a temperature sufficient to vaporize the precursor to obtain a vaporized precursor. In some embodiments, vaporization includes heating to a temperature below the decomposition temperature of at least one of the precursor, the vaporized precursor, or any combination thereof. In some embodiments, the precursor may be present in a gaseous phase, in which case this step is optional and not necessary. For example, the precursor may include a vaporized precursor.

[0059] At step 210, method 200 includes conveying a vaporization precursor from a second container to a deposition chamber via a second conduit. In some embodiments, method 200 includes transporting a second vaporization precursor via a second conduit to at least one deposition chamber located in a region of a manufacturing area at a second temperature. In some embodiments, transport includes conveying the vaporization precursor from the second container to the deposition chamber via a second conduit. In some embodiments, transport includes pumping the vaporization precursor from the second container to the deposition chamber via a second conduit. In some embodiments, transport includes extracting (e.g., under vacuum) the vaporization precursor from the second container to the deposition chamber via a second conduit. In some embodiments, transport includes allowing the vaporization precursor to flow from the second container to the deposition chamber via a second conduit. In some embodiments, transport includes opening the outlet and / or valve of the vaporization precursor from the second container to the deposition chamber via a second conduit. In some embodiments, transport includes allowing the vaporization precursor and a carrier gas to co-flow from the second container to the deposition chamber via a second conduit.

[0060] In some embodiments, method 200 further includes contacting a vaporization precursor, at least one of at least one vaporization co-reactant precursor, or any combination thereof, with the substrate under vapor deposition conditions sufficient to form a film on the surface of the substrate. Contact can be performed in any system, apparatus, device, assembly, chamber, or component suitable for a vapor deposition process, including (e.g., but not limited to) a deposition chamber. The vaporization precursor and at least one co-reactant precursor may be contacted with the substrate simultaneously or at different times. For example, each of the vaporization precursor, at least one vaporization co-reactant precursor, and the substrate may be present simultaneously in the deposition chamber. That is, in some embodiments, contact may include simultaneous or concurrent contact of the vaporization precursor and at least one vaporization co-reactant precursor with the substrate. Alternatively, each of the vaporization precursor and at least one vaporization co-reactant precursor may be present in the deposition chamber at different times. That is, in some embodiments, contact may include alternating and / or sequentially contacting the vaporization precursor with the substrate in one or more cycles, followed by contacting at least one vaporization co-reactant precursor with the substrate.

[0061] Vapor deposition conditions may include the conditions of a vapor deposition process. Examples of vapor deposition conditions include, but are not limited to, vapor deposition conditions used in vapor deposition processes, including at least one or any combination of chemical vapor deposition (CVD) processes, digital or pulsed chemical vapor deposition processes, plasma-enhanced cyclic chemical vapor deposition (PECCVD) processes, flowable chemical vapor deposition (FCVD) processes, atomic layer deposition (ALD) processes, thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD) processes, metal-organic chemical vapor deposition (MOCVD) processes, and plasma-enhanced chemical vapor deposition (PECVD) processes.

[0062] The substrate may include at least one of Si, Co, Cu, Al, W, WN, WC, TiN, Mo, MoC, Mo2N, SiO2, W, SiN, WCN, Al2O3, AlN, ZrO2, La2O3, TaN, RuO2, IrO2, Nb2O3, Y2O3, hafnium oxide, or any combination thereof, and is composed of or substantially composed of them. In some embodiments, the silicon-containing film may include at least one of silicon, silicon nitride, silicon oxynitride, silicon oxide, silicon dioxide, silicon carbide, silicon carbonitride, silicon carbonitride, silicon carbonitride, silicon carbonitride, silicon carbonitride, silicon carbonitride, silicon carbonitride, or silicon carbonitride, or any combination thereof, and is composed of or substantially composed of them. In some embodiments, the substrate may include other silicon-based substrates, such as, for example, one or more of polycrystalline silicon substrates, metal substrates, and dielectric substrates.

[0063] Figure 3 This is a schematic diagram of system 300 according to some embodiments. One part of system 300 is located in a sub-manufacturing area 101 (hereinafter referred to as the sub-manufacturing plant), while another part is located in a manufacturing area or base plate 102 (hereinafter referred to as the manufacturing plant), shown as enclosed by dashed lines. These parts are connected by a heating steam supply line (or first conduit) 105. Cabinet 110 is preferably located in the sub-manufacturing plant but may also be located in a more remote location. Cabinet 110 houses a first container 115 and a second container 116. In some embodiments, containers 115 and 116 and their internal support structures are made of electropolished 316L stainless steel. The 316L stainless steel is preferably coated with a thin film of a material that is more resistant to each particular chemical substance (e.g., nickel, alumina, etc.). In some embodiments, metallic alloy materials may be used. Inconel, Hastelloy C276, C22, Alloy 20, etc., are examples of such alloys. Alternatively, different materials may be used. For example, the container may be made of 316L stainless steel, and the internal support structure may be made of or coated with a more durable alloy. It should be understood that cabinet 110 may include only a single container, or cabinet 110 may include more than the first container 115 and the second container 116. For example, in some embodiments, cabinet 110 may include a third container, a fourth container, a fifth container, a sixth container, a seventh container, an eighth container, a ninth container, a tenth container, or more than ten containers.

[0064] Precursor 120 is stored in solid form in container 115, and precursor 121 is stored in solid form in container 116. Although different component symbols are used, precursors 120 and 121 are generally made of the same material. In use, for example, container 115 is used until precursor 120 is depleted. Then, container 116 is used when container 115 is replaced or refilled. After precursor 121 is depleted, container 115 is used when container 116 is replaced or refilled. Therefore, there is no downtime in this part of the process. First calibration unit 125 and second calibration unit 126 are configured to weigh containers 115 and 116 to provide information about the amount of precursor 120 remaining in container 115 and the amount of precursor 121 remaining in container 116. Connection lines 127 and 128 allow precursor vapor to exit containers 115 and 116. Containers 115 and 116 may also employ additional monitoring features to monitor multiple temperature zones, vacuum levels, mass delivery rates to the first conduit 105, internal / external filtration, internal / external purification, impurity levels, etc. A programmable logic controller 130 controls manifold 135 to regulate the transport of precursors 120 and 121 from containers 115 and 116 to the manufacturing plant. Specifically, precursors 120 and 121 are heated in containers 115 and 116 to induce sublimation, and optionally, the resulting vapor is transported to the manufacturing plant 102 via vapor supply line 105 using a carrier gas supplied by carrier gas supply source 140. In some embodiments, no carrier gas is used because transport is achieved by extracting vapor via the vapor supply line (e.g., under vacuum). The conditions of the first conduit or vapor supply line 105 may include any of the conditions disclosed herein and typically include a temperature and / or pressure less than that of line 199. Supply line 105 is preferably also heated to or above the temperature of the precursor in containers 115 or 116 and monitored to measure the precursor delivery rate. Precursors 120 and 121 are typically not delivered simultaneously via steam supply line 105. Instead, as discussed above, precursors 120 and 121 are preferably transported alternately. Purge gas supplied by purge gas supply source 145 is used to purge the conduits through which precursors 120 and 121 pass (e.g., steam supply line 105). Purge is preferably performed using an automated circulation system to remove potential chemical material from line 105, allowing it to exit containers 115 and 116 via connectors that are not individually marked. Waste is removed from manifold 135 to vacuum processing unit 148 via line 147. Line 147 may also be heated to limit condensation of the waste. As an alternative delivery method, containers 115 and 116 may be used in series or parallel with suitable manifolds. The manifold still allows individual containers to supply vapor to the run / refill chamber when another container is replaced. The option of series or parallel delivery will allow for more complete consumption of precursors without affecting the amount of steam available in the operating / refill chamber. This alternative approach will reduce the amount of residual precursors in the vessel and lower the cost of ownership.

[0065] Process system 150 is located in manufacturing plant 102. Process system 150 includes multiple run / refill chambers 155 to 157 that receive precursors 120 and 121 from vapor supply line 105. Specifically, precursors 120 and 121 enter run / refill chambers 155 to 157 as vapors and are then solidified or deposited as solids within run / refill chambers 155 to 157 by cooling. For the purposes of this invention, the term "deposition" and its variations refer to a chemical vapor deposition (CVD) process, where the precursor gas is chemically converted into a solid film rather than the more general act of placing an object in a specific location. Precursors 120 and 121 are stored in solid form within run / refill chambers 155 to 157. When needed, precursors 120, 121 are sublimated within one of the run / refill chambers 155 to 157 by heating the corresponding run / refill chamber. Run / refill chambers 155 to 157 are preferably rapidly heated and cooled between the run mode and the refill mode of solidified solids. Heating and cooling are preferably accomplished using one of several techniques, including resistance heating, hot oil recirculation, and radiant heating. Cooling can be accomplished by cooling water, ethylene glycol, heat transfer fluid, Peltier cooling device, Joule-Thompson cooling, etc. Precursors 120 and 121 are then transported to deposition chamber 160, which is preferably adjacent to run / refill chambers 155 to 157 and includes pressure gauge 161. Alternatively, precursors 120 and 121 are transported to a second run / refill chamber 155 to 157. Conduit 165 connects chambers 155 to 157 to a vacuum. In the first case, selected precursors 120 and 121 are used to deposit a film onto a substrate (not shown) located within deposition chamber 160. Additional co-reactants and inert gases are typically part of the CVD or ALD process. These are not shown but are delivered using conventional hardware including a mass flow controller (MFC) and a pressure controller (PC). In the atomic layer deposition (ALD) process, the delivery of the co-reactant gas is time-separated from the delivery of the precursor vapor. An optional carrier gas supply source 170 can be used to deliver precursors 120 and 121 within process system 150, while programmable logic controller 175 controls process system 150. More specifically, controller 175 is connected to pressure gauge 161 and control valve 197 via control lines 176 and 177 and can measure and control the pressure in chamber 160 by opening valve 197 leading to vacuum 198. Purge gas supplied by purge gas supply source 180 is used to purge run / refill chambers 155 to 157.

[0066] It should be understood that although the deposition chamber 160 is in fluid communication with three operating / refill chambers (i.e., operating / refill chambers 155 to 157), the system 300 may include other configurations and numbers of operating / refill chambers and deposition chambers. For example, in some embodiments, the system 300 includes one or more of the following: a first operating / refill chamber and a second operating / refill chamber in fluid communication with the first deposition chamber; a third operating / refill chamber and a fourth operating / refill chamber in fluid communication with the second deposition chamber; a fifth operating / refill chamber and a sixth operating / refill chamber in fluid communication with the third deposition chamber; and so on. In some embodiments, the deposition chamber is in fluid communication with only a single operating / refill chamber or more than two operating / refill chambers (e.g., three to ten or more operating / refill chambers). In some embodiments, the system 300 includes more than three deposition chambers (e.g., four to ten or more deposition chambers).

[0067] In some embodiments, each of the run / refill chambers 155 to 157 is sized to hold an amount of precursor 120 or 121 sufficient for one deposition cycle rather than two deposition cycles. In other embodiments, each of the run / refill chambers 155 to 157 is sized to hold an amount of precursor 120 or 121 sufficient for multiple deposition cycles. The term "deposition cycle" refers to the step of depositing a monolayer of film on a substrate. Although the run / refill chambers 155 to 157 are labeled with different element symbols, the run / refill chambers 155 to 157 may be identical to each other.

[0068] The term "run / refill" refers to "run and / or refill". When a chamber (e.g., chamber 155) is at its lower temperature setting, the chamber is refilled and vapor enters via vapor supply line 105 and condenses inside the high surface area. Subsequently, when the chamber is at its higher temperature setting, the chamber is running and the solids condensed during the refilling portion of the cycle are vaporized and the vapor is delivered to the deposition chamber via line 199. The conditions of line 199 (e.g., a second conduit) may include any of the conditions disclosed herein and typically include a temperature and / or pressure greater than that of line 105. The term "run / refill chamber" indicates that the chamber is both a run chamber and a refill chamber. The run / refill chamber may incorporate filtration, purification, pressure / vacuum monitoring and delivery rate or solid membrane sensing. The run / refill chamber is preferably designed to cycle for each wafer, or a single "refill" of the run / refill chamber is designed to provide vapor for two or more wafers before another "refill".

[0069] Figure 4This is a schematic diagram of system 400 according to some embodiments. System 400 generally functions in the same manner as system 300, except that system 400 has one run / refill chamber per deposition chamber. Specifically, process system 250 includes a plurality of run / refill chambers 255 to 257 that receive precursors 120 and 121 from vapor supply line 105. The conditions of the first conduit or vapor supply line 105 may include any of the conditions disclosed herein and generally include a temperature and / or pressure less than that of line 199. Precursors 120 and 121 enter as vapor into run / refill chambers 255 to 257 and are then deposited as solids within run / refill chambers 255 to 257 by cooling. When needed, precursor 120 or 121 is sublimated within one of run / refill chambers 255 to 257 by heating said run / refill chamber 255 to 257. Next, precursor 120 or 121 is transported via line 199 to corresponding deposition chambers of the plurality of deposition chambers 260 to 262. Precursor 120 or 121 is used to deposit a film onto a substrate (not shown) located within the corresponding deposition chamber 260 to 262. Optional carrier gas supply source 270 can be used to transport precursors 120 and 121 within process system 250, while controller 275 controls process system 250. Controller 275 is connected to gauges 263 to 265 via control line 276. Controller 275 is also connected to control valves 295 to 297 via line 277 and can measure and control the pressure in chambers 260 to 262 by opening valves 295 to 297 leading to vacuum 298. Purge gas supplied by purge gas supply source 280 is used to purge run / refill chambers 255 to 257. In some embodiments, precursors 120 and 121 are transported in a vapor extraction configuration.

[0070] In some embodiments, the carrier gas supply source 270 is removed from the system 400. In some embodiments, a mass flow controller (MFC) (not shown) is added to the delivery line 199 located between the run / refill chamber 255 and the deposition chamber 260.

[0071] Figure 5This is a schematic diagram of system 500 according to some embodiments. System 500 generally functions in the same manner as systems 300 and 400, except that system 500 includes multiple process systems 350 to 352. Each process system 350 to 352 includes run / refill chambers 355 to 357, which receive precursors 120 and 121 from vapor supply line 105. The conditions of the first conduit or vapor supply line 105 may include any of the conditions disclosed herein and generally include a temperature and / or pressure less than that of line 199. Precursors 120 and 121 enter run / refill chambers 355 to 357 as vapor and are then deposited as solids within run / refill chambers 355 to 357 by cooling. When needed, precursors 120 or 121 sublimate within one of the run / refill chambers 355 to 357 by heating. Next, precursor 120 or 121 is transported via line 199 to the corresponding deposition chambers 360 to 362. Precursor 120 or 121 is used to deposit a film onto a substrate (not shown) located within the deposition chambers 360 to 362. Optional carrier gas supply sources 370 to 372 can be used to transport precursors 120 and 121 within process systems 350 to 352, while controllers 375 to 377 control process systems 350 to 352. More specifically, controllers 375 to 377 are connected to gauges 363 to 365 via control lines marked 378 to 383. Controllers 375 to 377 are also connected to control valves 395 to 397 and can measure and control the pressure in chambers 360 to 362 by opening valves 395 to 397 leading to vacuum at locations 398 to 400. Purge gas supplied by purge gas supply sources 380 to 382 is used to purge operating / refill chambers 355 to 357. In some embodiments, precursors 120 and 121 are transported in a vapor extraction configuration.

[0072] Example 1

[0073] 30 kg of solid MoO2Cl2 precursor is loaded into ampoules (Entegris PE600 in the Entecris SSDC) located in the non-manufacturing area or “sub-manufacturing plant”. During the refilling phase, the ampoules are maintained at 100°C, the conduit leading to the manufacturing area (“manufacturing plant area”) is maintained at 120°C, and the run / refill chamber located in the manufacturing area is maintained at 90°C, with the flow rate set at approximately 200 sccm to allow approximately 2 kg of MoO2Cl2 to accumulate over approximately 20 hours. Over the next 2 hours, the temperature of the run / refill chamber is increased to 135°C and the conduit leading to the deposition chamber is maintained at 155°C. Under these conditions, the run / refill chamber delivers up to 1000 sccm pulses of MoO2Cl2 vapor to the deposition chamber as needed during the run phase via a mass flow controller (MFC). At the end of the deposition / run phase, the remaining material from the run / refill chamber bypasses the deposition chamber and is sent to the scrubber / waste. Subsequent refilling phases are performed under similar conditions. Since there are two run / refill chambers at each deposition chamber, one chamber is refilled while the other is used to deposit a film in the deposition chamber.

[0074] aspect

[0075] The following describes various aspects. It should be understood that any or more of the features described in the following aspects may be combined with any or more other aspects.

[0076] Aspect 1. A system comprising:

[0077] At least one first container;

[0078] At least one second container;

[0079] At least one sedimentation chamber;

[0080] A first conduit connecting the at least one first container to the at least one second container; and

[0081] A second conduit connects the at least one second container to the at least one deposition chamber;

[0082] The first conduit is configured to deliver a vaporization precursor at a first temperature from the at least one first container to the at least one second container;

[0083] The second conduit is configured to deliver the vaporization precursor, which is at a second temperature, from the at least one second container to the at least one deposition chamber;

[0084] The first temperature is lower than the second temperature.

[0085] Aspect 2. The system according to aspect 1,

[0086] The at least one of the first containers is located in a non-manufacturing area;

[0087] The at least one second container is located in the manufacturing area;

[0088] The at least one of the deposition chambers is located in the manufacturing area.

[0089] Aspect 3. The system according to any one of aspects 1 to 2, wherein the first catheter has a length greater than the length of the second catheter.

[0090] Aspect 4. The system according to any one of aspects 1 to 3, wherein the first catheter has a length at least twice the length of the second catheter.

[0091] Aspect 5. The system according to any one of aspects 1 to 4, wherein the first temperature is a first setpoint temperature, wherein the second temperature is a second setpoint temperature, and wherein the first setpoint temperature is at least 5°C lower than the second setpoint temperature.

[0092] Aspect 6. The system according to any one of aspects 1 to 5, wherein the first temperature is a first set point temperature, wherein the second temperature is a second set point temperature, and wherein the first set point temperature is at least 10°C lower than the second set point temperature.

[0093] Aspect 7. The system according to any one of aspects 1 to 6, wherein the first temperature is a first set point temperature, wherein the second temperature is a second set point temperature, and wherein the first set point temperature is 20°C to 30°C lower than the second set point temperature.

[0094] Aspect 8. The system according to any one of aspects 1 to 7, further comprising:

[0095] Multiple temperature controllers are positioned along the length of the first conduit.

[0096] Each of the plurality of temperature controllers is positioned at least 5 feet apart along the length of the first conduit.

[0097] Each of the plurality of temperature controllers is configured to maintain the first conduit at the first temperature.

[0098] The first temperature is the first set point temperature.

[0099] Aspect 9. The system according to any one of aspects 1 to 8, further comprising at least one vacuum, wherein the at least one vacuum is connected to at least one of the first conduit, the second conduit, or any combination thereof, wherein the at least one vacuum is configured to extract the vaporized precursor through at least one of the first conduit, the second conduit, or any combination thereof.

[0100] Aspect 10. A system comprising:

[0101] At least one first container;

[0102] At least one second container;

[0103] At least one sedimentation chamber;

[0104] A first conduit connecting the at least one first container to the at least one second container; and

[0105] A second conduit connects the at least one second container to the at least one deposition chamber;

[0106] The first conduit is configured to deliver the vaporization precursor from the at least one first container to the at least one second container under a first pressure;

[0107] The second conduit is configured to deliver the vaporization precursor from the at least one second container to the at least one deposition chamber under a second pressure;

[0108] The first pressure is less than the second pressure.

[0109] Aspect 11. The system according to aspect 10,

[0110] The at least one first container is located outside the manufacturing area;

[0111] The at least one of the second containers is located in the manufacturing area;

[0112] The at least one of the deposition chambers is located in the manufacturing area.

[0113] Aspect 12. The system according to any one of aspects 10 to 11, wherein the first catheter has a length greater than the length of the second catheter.

[0114] Aspect 13. The system according to any one of aspects 10 to 12, wherein the first catheter has a length at least twice the length of the second catheter.

[0115] Aspect 14. The system according to any one of aspects 10 to 13, wherein the first pressure is a first set point pressure, wherein the second pressure is a second set point pressure, and wherein the first set point pressure is at least 10% less than the second set point pressure.

[0116] Aspect 15. The system according to any one of aspects 10 to 14, wherein the first pressure is a first set point pressure, wherein the second pressure is a second set point pressure, and wherein the first set point pressure is at least 15% less than the second set point pressure.

[0117] Aspect 16. The system according to any one of aspects 10 to 15, further comprising at least one vacuum, wherein the at least one vacuum is connected to at least one of the first conduit, the second conduit, or any combination thereof, wherein the at least one vacuum is configured to extract the vaporized precursor through at least one of the first conduit, the second conduit, or any combination thereof.

[0118] Aspect 17. A method comprising:

[0119] The precursor is vaporized in a first container located in an area outside the manufacturing area to obtain a first vaporized precursor;

[0120] The first vaporization precursor is transported through a first conduit to a second container located in a region of the manufacturing area at a first temperature;

[0121] The first vaporized precursor in the second container is condensed to obtain a solid precursor;

[0122] The solid precursor is vaporized in the second container to obtain a second vaporized precursor; and

[0123] The second vaporization precursor is transported through a second conduit to at least one deposition chamber in a region located within the manufacturing area at a second temperature.

[0124] Aspect 18. The method according to aspect 17, wherein the first catheter has a length greater than the length of the second catheter.

[0125] Aspect 19. The method according to any one of aspects 17 to 18, wherein the first catheter has a length at least twice the length of the second catheter.

[0126] Aspect 20. The method according to any one of aspects 17 to 19, wherein the first temperature is at least 10% lower than the second temperature.

[0127] It should be understood that detailed changes may be made without departing from the scope of this disclosure, particularly in terms of the construction materials and the shape, size, and arrangement of components. This specification and the described embodiments are examples, wherein the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. A system comprising: At least one first container; At least one second container; At least one sedimentation chamber; A first conduit connects the at least one first container to the at least one second container; and A second conduit connects the at least one second container to the at least one deposition chamber; The first conduit is configured to deliver a vaporization precursor at a first temperature from the at least one first container to the at least one second container; The second conduit is configured to deliver the vaporization precursor, which is at a second temperature, from the at least one second container to the at least one deposition chamber; The first temperature is lower than the second temperature.

2. The system according to claim 1, The at least one of the first containers is located in a non-manufacturing area; The at least one second container is located in the manufacturing area; The at least one of the deposition chambers is located in the manufacturing area.

3. The system of claim 1, wherein the first catheter has a length greater than the length of the second catheter.

4. The system of claim 1, wherein the first catheter has a length at least twice the length of the second catheter.

5. The system according to claim 1, wherein the first temperature is a first setpoint temperature, wherein the second temperature is a second setpoint temperature, and wherein the first setpoint temperature is at least 5°C lower than the second setpoint temperature.

6. The system according to claim 1, wherein the first temperature is a first setpoint temperature, wherein the second temperature is a second setpoint temperature, and wherein the first setpoint temperature is at least 10°C lower than the second setpoint temperature.

7. The system according to claim 1, wherein the first temperature is a first setpoint temperature, wherein the second temperature is a second setpoint temperature, and wherein the first setpoint temperature is 20°C to 60°C lower than the second setpoint temperature.

8. The system according to claim 1, further comprising: Multiple temperature controllers are positioned along the length of the first conduit. Each of the plurality of temperature controllers is positioned at least 5 feet apart along the length of the first conduit. Each of the plurality of temperature controllers is configured to maintain the first conduit at the first temperature. The first temperature is the first set point temperature.

9. The system of claim 1, further comprising at least one vacuum, wherein the at least one vacuum is connected to at least one of the first conduit, the second conduit, or any combination thereof, wherein the at least one vacuum is configured to extract the vaporization precursor through at least one of the first conduit, the second conduit, or any combination thereof.

10. A system comprising: At least one first container; At least one second container; At least one sedimentation chamber; A first conduit connects the at least one first container to the at least one second container; and A second conduit connects the at least one second container to the at least one deposition chamber; The first conduit is configured to deliver the vaporization precursor from the at least one first container to the at least one second container under a first pressure; The second conduit is configured to deliver the vaporization precursor from the at least one second container to the at least one deposition chamber under a second pressure; The first pressure is less than the second pressure.

11. The system according to claim 10, The at least one first container is located outside the manufacturing area; The at least one of the second containers is located in the manufacturing area; The at least one of the deposition chambers is located in the manufacturing area.

12. The system of claim 10, wherein the first catheter has a length greater than the length of the second catheter.

13. The system of claim 10, wherein the first catheter has a length at least twice the length of the second catheter.

14. The system of claim 10, wherein the first pressure is a first set point pressure, wherein the second pressure is a second set point pressure, and wherein the first set point pressure is at least 10% less than the second set point pressure.

15. The system of claim 10, wherein the first pressure is a first set point pressure, wherein the second pressure is a second set point pressure, and wherein the first set point pressure is at least 15% less than the second set point pressure.

16. The system of claim 10, further comprising at least one vacuum, wherein the at least one vacuum is connected to at least one of the first conduit, the second conduit, or any combination thereof, wherein the at least one vacuum is configured to extract the vaporization precursor through at least one of the first conduit, the second conduit, or any combination thereof.

17. A method comprising: The precursor is vaporized in a first container located in an area outside the manufacturing area to obtain a first vaporized precursor; The first vaporization precursor is transported through a first conduit to a second container located in a region of the manufacturing area at a first temperature; The first vaporized precursor in the second container is condensed to obtain a solid precursor; The solid precursor is vaporized in the second container to obtain a second vaporized precursor; and The second vaporization precursor is transported through a second conduit to at least one deposition chamber in a region located within the manufacturing area at a second temperature.

18. The method of claim 17, wherein the first catheter has a length greater than the length of the second catheter.

19. The method of claim 17, wherein the first catheter has a length at least twice the length of the second catheter.

20. The method of claim 17, wherein the first temperature is at least 10% lower than the second temperature.

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