Plasma processing apparatus and substrate processing apparatus

Abstract

A technology is provided that enables the recovery of material flowing out from a substrate processing space. A plasma processing apparatus includes: a chamber having a plasma processing space; and a plasma viewing port mounted in the chamber, the plasma viewing port comprising: a first window; a second window disposed between the first window and the plasma processing space; a third window disposed between the first window and the second window; and a lattice structure disposed between the second window and the third window.

Description

Technical Field

[0001] Exemplary embodiments of this disclosure relate to plasma processing apparatus and substrate processing apparatus. Background Technology

[0002] As a technology for setting up a plasma viewing port facing a high-temperature environment in a semiconductor processing device, there is the technology described in Patent Document 1.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Publication No. 2022-545274 Summary of the Invention

[0006] This invention provides a technology for recovering materials that flow out of a substrate processing space.

[0007] In one exemplary embodiment of the present invention, a plasma processing apparatus includes a chamber having a plasma processing space and a plasma viewport installed in the chamber. The plasma viewport includes a first window, a second window disposed between the first window and the plasma processing space, a third window disposed between the first window and the second window, and a lattice structure disposed between the second window and the third window.

[0008] Invention Effects

[0009] According to an exemplary embodiment of the present invention, a technique for recovering particles discharged from a substrate processing space can be provided. Attached Figure Description

[0010] Figure 1 This is a diagram illustrating a structural example of a plasma processing system.

[0011] Figure 2 This is a diagram illustrating an example of the structure of a plasma processing device.

[0012] Figure 3 This is a diagram illustrating a structural example of a plasma viewport.

[0013] Figure 4 This is a diagram illustrating a structural example of a frame used to explain a plasma viewport.

[0014] Figure 5 This is a diagram showing the first window viewed from the second window side, used to illustrate an example of the structure of a plasma viewport.

[0015] Figure 6 This is a diagram illustrating an example of a crystal structure with an octapeak.

[0016] Figure 7 This is a diagram illustrating an example of a bitriangle lattice structure.

[0017] Figure 8 This is a diagram illustrating an example of a dodecahedron lattice structure.

[0018] Figure 9 This is a diagram illustrating an example of a quad-diagonal lattice structure.

[0019] Figure 10 This is a diagram illustrating an example of a star-shaped lattice structure.

[0020] Figure 11 This is a diagram illustrating an example of a tri-diagonal lattice structure.

[0021] Figure 12 This is a diagram used to illustrate other structural examples of plasma viewports.

[0022] Figure 13 This is a diagram showing the first window viewed from the second window side, used to illustrate other structural examples of plasma viewports.

[0023] Figure 14 This is a diagram illustrating other structural examples of a plasma processing device.

[0024] Explanation of reference numerals in the attached figures

[0025] 1: Plasma processing device; 10: Chamber; 10a: Side wall; 10s: Plasma processing space; 11: Substrate support; 200: Plasma viewing port; 201: Detector; 250: First window; 251: Second window; 252: Third window; 253: Frame; 254: Lattice structure; W: Substrate. Detailed Implementation

[0026] The following describes various embodiments of this disclosure.

[0027] In one exemplary embodiment, a plasma processing apparatus is provided, comprising a chamber having a plasma processing space and a plasma viewing port installed in the chamber. The plasma viewing port includes a first window, a second window disposed between the first window and the plasma processing space, a third window disposed between the first window and the second window, and a lattice structure disposed between the second window and the third window.

[0028] In one exemplary embodiment, the first window comprises a quartz material.

[0029] In one exemplary embodiment, the third window comprises sapphire material.

[0030] In one exemplary embodiment, the second window has a plurality of through holes communicating with the plasma processing space.

[0031] In one exemplary embodiment, the lattice structure comprises a ceramic material or anodized aluminum material.

[0032] In one exemplary embodiment, the lattice structure has a porosity of 1% to 90%.

[0033] In one exemplary embodiment, the lattice structure has at least one lattice structure selected from the group consisting of an octagonal structure, a bitriangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure.

[0034] In one exemplary embodiment, when the first window is viewed from the second window, the lattice structure is configured to overlap with the first window.

[0035] In one exemplary embodiment, when the first window is viewed from the second window, the lattice structure is configured to surround the space that overlaps with the first window.

[0036] In one exemplary embodiment, a substrate processing apparatus is provided, which includes a chamber having a substrate processing space and a viewport mounted in the chamber. The viewport includes a frame defining a first space communicating with the substrate processing space, a first window, and a lattice structure disposed in the first space between the first window and the substrate processing space.

[0037] In one exemplary embodiment, the first window contains a material selected from the group consisting of quartz, sapphire, YAG and Y2O3.

[0038] In one exemplary embodiment, the lattice structure comprises a ceramic material or anodized aluminum material.

[0039] In one exemplary embodiment, the lattice structure has a porosity of 1% to 90%.

[0040] In one exemplary embodiment, the lattice structure has at least one lattice structure selected from the group consisting of an octagonal structure, a bitriangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure.

[0041] In one exemplary embodiment, a substrate processing apparatus is provided, comprising a chamber having a substrate processing space, a component having a first space communicating with the substrate processing space, and a lattice structure disposed within the first space.

[0042] In one exemplary embodiment, an exhaust system is also provided that communicates with the substrate processing space via a first space.

[0043] In one exemplary embodiment, the lattice structure comprises a ceramic material or anodized aluminum material.

[0044] In one exemplary embodiment, the lattice structure has a porosity of 1% to 90%.

[0045] In one exemplary embodiment, the lattice structure has at least one lattice structure selected from the group consisting of an octagonal structure, a bitriangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure.

[0046] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. Furthermore, the same or identical elements will be labeled with the same symbols in the drawings, and repeated descriptions will be omitted. Unless otherwise specified, positional relationships such as up, down, left, and right will be described based on the positional relationships shown in the drawings. The dimensions in the drawings are not actual scales, and the actual scale is not limited to the scale shown.

[0047] <An Example of a Plasma Processing System>

[0048] Figure 1 This is a diagram illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a controller 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generation portion 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas into the plasma processing space and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 (described later), and the gas outlet is connected to the exhaust system 40 (described later). The substrate support portion 11 is disposed within the plasma processing space and has a substrate support surface for supporting the substrate.

[0049] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied to the plasma processing space. The plasma formed in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Alternatively, various types of plasma generation units, including alternating current (AC) plasma generation units and direct current (DC) plasma generation units, can also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes radio frequency (RF) signals and microwave signals. In one embodiment, the radio frequency signal has a frequency in the range of 100 kHz to 150 MHz.

[0050] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 can be configured to control various elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may also include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may, for example, be implemented by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a and may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a central processing unit (CPU). The storage unit 2a2 may include random access memory (RAM), read-only memory (ROM), hard disk drive (HDD), solid-state drive (SSD), or a combination thereof. The communication interface 2a3 may also communicate with the plasma processing device 1 via a communication line such as a local area network (LAN).

[0051] Hereinafter, a structural example of an inductively coupled plasma processing apparatus, which is one example of plasma processing apparatus 1, will be described. Figure 2 This is a diagram illustrating a structural example of an inductively coupled plasma processing device.

[0052] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 (sometimes simply referred to as a "chamber"), a gas supply unit 20, a power supply 30, and an exhaust system 40. Additionally, the plasma processing apparatus 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a nozzle 13. The substrate support 11 is disposed within the plasma processing chamber 10. The nozzle 13 is disposed above the substrate support 11. In one embodiment, the nozzle 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the nozzle 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The nozzle 13 and the substrate support 11 are electrically insulated from the frame of the plasma processing chamber 10.

[0053] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. The wafer is an example of the substrate W. When viewed from above, the annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also referred to as the substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as the annular support surface for supporting the ring assembly 112.

[0054] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b disposed within the ceramic component 1111a. The ceramic component 1111a has a central region 111a. In one embodiment, the ceramic component 1111a also includes an annular region 111b. Alternatively, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. Additionally, at least one radio frequency / DC electrode coupled to the radio frequency power supply 31 and / or DC power supply 32 described later may also be disposed within the ceramic component 1111a. In this configuration, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal, described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Additionally, the conductive components of the base 1110 and the at least one RF / DC electrode can also function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b can also function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0055] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0056] Additionally, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are disposed within the ceramic component 1111a of the electrostatic chuck 1111. Furthermore, the substrate support 11 may also include a heat transfer gas supply section configured to supply heat transfer gas between the back surface and the central region 111a of the substrate W.

[0057] The nozzle 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The nozzle 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. Additionally, the nozzle 13 includes at least one upper electrode. Furthermore, in addition to the nozzle 13, the gas inlet unit may also include one or more side gas injectors (SGIs) mounted on one or more openings formed on the sidewall 10a.

[0058] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to a nozzle 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsed the flow rate of the at least one process gas.

[0059] The power supply 30 includes a radio frequency (RF) power supply 31, which is coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Plasma is thus formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, enabling the introduction of ionic components from the formed plasma into the substrate W.

[0060] In one embodiment, the radio frequency (RF) power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit to generate a source RF signal (source RF power) for generating plasma. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0061] The second radio frequency (RF) generation unit 31b is configured to be coupled to at least one lower electrode via at least one impedance matching circuit to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0062] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0063] In various embodiments, the first DC signal and the second DC signal can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating the voltage pulse sequence from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Additionally, the first DC generation unit 32a and the second DC generation unit 32b can be provided based on the RF power supply 31, or the first DC generation unit 32a can be provided instead of the second RF generation unit 31b.

[0064] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0065] In one embodiment, the plasma processing apparatus 1 further includes a plasma viewport 200 and a detector 201.

[0066] In one embodiment, the plasma viewport 200 is mounted on the sidewall 10a of the chamber 10.

[0067] Figure 3 This is a diagram illustrating a structural example of a plasma viewport 200. In one embodiment, the plasma viewport 200 includes a first window 250, a second window 251, a third window 252, a frame 253, and a lattice structure 254.

[0068] From the plasma processing space 10s inside the chamber 10 toward the detector 201 outside the chamber 10, a second window 251, a lattice structure 254, a third window 252, and a first window 250 are arranged sequentially.

[0069] The second window 251 has a plurality of through holes 300 communicating with the plasma processing space 10s. Each through hole 300 may have a diameter of 0.1 mm to 10 mm. In this example, the sidewall 10a of the chamber 10 has an inner sidewall 310 and an outer sidewall 311. The inner sidewall 310 is a deposition shield that suppresses the deposition of reaction products generated during plasma processing onto the outer sidewall 311. The inner sidewall 310 is detachable from the chamber 10. In one embodiment, the second window 251 is mounted on the inner sidewall 310. The second window 251 is detachable relative to the inner sidewall 310. The second window 251 is configured to face the plasma processing space 10s between the substrate support 11 and the nozzle 13.

[0070] In one embodiment, frame 253 holds lattice structure 254, third window 252, and first window 250. Frame 253 is mounted on outer side wall 311 of chamber 10. Frame 253 is detachable relative to outer side wall 311.

[0071] In one embodiment, the frame 253 has a cylindrical portion 350 disposed on the plasma processing space 10s side and a flange portion 351 disposed on the detector 201 side.

[0072] In one embodiment, the cylindrical portion 350 includes a first portion 370, a window holding portion 371, and a second portion 372. The first portion 370 is configured to define a first space 360 ​​communicating with the plasma processing space 10s. The window holding portion 371 is configured to hold a third window 252. The second portion 372 is configured to define a second space 361 between the third window 252 and the first window 250. The first space 360 ​​defined by the first portion 370 communicates with the plasma processing space 10s via a through-hole 300 in the second window 251. The window holding portion 371 is configured to hold the third window 252 between the first space 360 ​​and the second space 361. The window holding portion 371 may be configured to allow the third window 252 to be detached.

[0073] In one embodiment, the flange 351 is configured to retain the first window 250. The flange 351 may have a fixing mechanism for securing the frame 253 to the outer side wall 311 of the chamber 10. The flange 351 is configured to detach the first window 250.

[0074] like Figure 4 As shown, the cylindrical portion 350 may have a sidewall 350a forming a generally square opening OP1. The flange portion 351 may have a generally square plate shape.

[0075] The third window 252 comprises a material selected from the group consisting of quartz, sapphire, YAG, and Y2O3. In one embodiment, the third window 252 comprises sapphire material. The third window 252 may include sapphire material as a main component and may be formed from sapphire. The third window 252 is translucent. The third window 252 may be in the form of a square or circular plate.

[0076] The first window 250 comprises a material selected from the group consisting of quartz, sapphire, YAG, and Y2O3. In one embodiment, the first window 250 comprises a quartz material. The first window 250 may contain quartz material as a main component and may be formed from quartz. The first window 250 is translucent. The first window 250 may be square or circular in shape. The first window 250 may have a diameter larger than that of the third window 252. The second window 251, the third window 252, and the first window 250 are arranged with their window surfaces parallel, configured in a generally straight line.

[0077] The lattice structure 254 is disposed in the first space 360 ​​between the second window 251 and the third window 252 within the frame 253. For example... Figure 5 As shown, when the first window 250 is viewed from the second window 251 (plasma processing space 10s) (viewed from the side, when the lattice structure 254 is projected onto the first window 250 in the horizontal direction), the lattice structure 254 is configured to overlap with the first window 250. In one embodiment, in Figures 3 to 5 In the example shown, lattice structure 254 is disposed throughout the first space 360. Lattice structure 254 is configured to cover the entire surface of opening OP1. Lattice structure 254 comprises a ceramic material or anodized aluminum material. Lattice structure 254 has a porosity of 1% to 90%.

[0078] The crystal structure 254 may have at least one crystal structure selected from the group consisting of an octagonal structure, a bitriangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure. A crystal structure is a three-dimensional structure constructed by periodically arranging multiple unit lattices.

[0079] Figure 6 This is a diagram illustrating an example of the eight-peak lattice structure 254-1. (See diagram for example.) Figure 6 As shown in Figure A, the eight-peak lattice structure 254-1 has a unit lattice 254a, which connects eight pillars bent into arc shapes, forming peaks at the center of each face of the regular hexahedron. Figure 6 As shown in (b), the lattice structure 254-1 has a three-dimensional shape in which multiple unit lattices 254a are regularly arranged and interconnected in the longitudinal, transverse and depth directions.

[0080] Figure 7 This is a diagram illustrating an example of a bitriangular lattice structure, 254-2. (See diagram for example.) Figure 7 As shown in Figure A, the double-triangular lattice structure 254-2 has a unit lattice 254b, which allows the two pillars of the triangle to be joined together. Figure 7 As shown in (b), the lattice structure 254-2 has a three-dimensional shape in which multiple unit lattices 254b are regularly arranged and interconnected in the longitudinal, transverse and depth directions.

[0081] Figure 8 This is a diagram illustrating an example of a dodecahedral lattice structure, 254-3. (See diagram for example.) Figure 8 As shown in Figure A, the dodecahedral lattice structure 254-3 has a unit lattice 254c, which is based on a dodecagonal pillar structure. Figure 8 As shown in (b), the lattice structure 254-3 has a three-dimensional shape in which multiple unit lattices 254c are regularly arranged and interconnected in the longitudinal, transverse and depth directions.

[0082] Figure 9 This is a diagram illustrating an example of a tetradiagonal lattice structure 254-4. (See diagram below.) Figure 9 As shown in Figure A, the tetradiagonal lattice structure 254-4 has a unit lattice 254d, which causes the four pillars of the straight lines to be joined at their respective centers. Figure 9 As shown in B, the lattice structure 254-4 has a three-dimensional shape in which multiple unit lattices 254d are regularly arranged and interconnected in the longitudinal, transverse and depth directions.

[0083] Figure 10 This is a diagram illustrating an example of a star-shaped lattice structure, 254-5. (See diagram for example.) Figure 10 As shown in (a), the star-shaped lattice structure 254-5 has a unit cell lattice 254e, which allows the pillars with multiple outwardly projecting acute angles to be interlocked. Figure 10 As shown in (b), the lattice structure 254-5 has a three-dimensional shape in which multiple unit lattices 254e are regularly arranged and interconnected in the longitudinal, transverse and depth directions.

[0084] Figure 11 This is a diagram illustrating an example of a tridiagonal lattice structure, 254-6. (See diagram for example.) Figure 11 As shown in (a), the tridiagonal lattice structure 254-6 has a unit lattice 254f, which causes the three pillars of the straight line to be joined at their respective centers. Figure 11As shown in (b), the lattice structure 254-6 has a three-dimensional shape in which multiple unit lattices 254f are regularly arranged and interconnected in the longitudinal, transverse and depth directions.

[0085] The crystal structure 254 is not limited to the above. Figures 6 to 11 For example, other lattice structures may also be used. When the first window 250 is viewed from the second window 251, the lattice structure 254 may be configured to fully or partially overlap with the first window 250.

[0086] exist Figure 2 In the example shown, detector 201 is disposed on the outer side of outer wall 311. Detector 201 may be disposed near the first window 250. Detector 201 may be configured to perform optical measurements of the state of plasma processing space 10s via plasma viewport 200. Detector 201 may be at least one selected from the group consisting of a camera, an optical emission spectrometer (OES), and a spectrometer. Furthermore, detector 201 may or may not be included in part of plasma processing apparatus 1. Detector 201 may be installed during use or permanently. Detector 201 may be configured to measure the consumption state and contaminant adhesion state of chamber 10 or its components. Detector 201 may detect other objects.

[0087] <An example of plasma processing>

[0088] Plasma processing is performed in the plasma processing apparatus 1 described above. The plasma processing includes etching of the film on the substrate W using plasma etching. In one embodiment, the plasma processing is performed by the control unit 2 within the plasma processing apparatus 1.

[0089] exist Figure 2 In the plasma processing apparatus 1 shown, firstly, the substrate W is transported into the chamber 10 by a conveyor arm, and then placed on the substrate support 11 by a lift, and is adsorbed and held on the substrate support 11.

[0090] Next, the processing gas is supplied by the gas supply unit 20 to the plasma processing space 10s through the nozzle 13. The processing gas supplied at this time contains the gas of active species required for the etching process of the substrate W.

[0091] The source radio frequency signal for generating plasma is provided to the upper electrode and / or the lower electrode by the radio frequency power supply 31 of the plasma generation unit 12. A bias signal for introducing the ionic components of the plasma into the substrate is supplied to the lower electrode by the radio frequency power supply 31 or the DC power supply 32. The ambient gas in the plasma processing space 10s is discharged from the gas outlet 10e, and the interior of the plasma processing space 10s is depressurized. Thus, plasma is generated by the processing gas on the substrate support 11 of the plasma processing space 10s, and the substrate W is etched.

[0092] During plasma processing, the state of the plasma processing space 10s can be optically detected by detector 201. Light within the plasma processing space 10s sequentially passes through the second window 251, the lattice structure 254, the third window 252, and the first window 250 of the plasma viewing port 200, and is detected by detector 201. During the plasma processing space 10s, deposited or etched components obtained from the processing gas or plasma are generated. A portion of these components can enter the frame 253 through the through-hole 300 of the second window 251. In one embodiment, the components entering the frame 253 are consumed either by deposition on the large surface area lattice structure 254 or by grinding (consuming) the lattice structure 254. This prevents the deposited or etched components within the plasma processing space 10s from reaching the third window 252 or the first window 250.

[0093] According to this exemplary embodiment, the plasma processing apparatus 1 includes a chamber 10 having a plasma processing space 10s and a plasma viewing port 200 mounted on the chamber 10. The plasma viewing port 200 includes a first window 250, a second window 251 disposed between the first window 250 and the plasma processing space 10s, a third window 252 disposed between the first window 250 and the second window 251, and a lattice structure 254 disposed between the second window 251 and the third window 252. This allows the deposition or etching components flowing out of the plasma processing space 10s to be consumed in the lattice structure 254, thereby enabling the recovery of materials flowing out of the substrate processing space. As a result, the deposition of deposits on the first window 250 or the third window 252 is reduced, and the attenuation of light in the first window 250 or the third window 252 is reduced. Furthermore, the consumption of light through the first window 250 and the third window 252 is reduced, and light passes stably through the first window 250 and the third window 252. As a result, light can be detected sufficiently and stably in the detector 201. Consequently, the replacement cycle or lifespan of the first window 250 or the third window 252 becomes longer.

[0094] In one implementation, such as Figure 12 and 13As shown, when the first window 250 is viewed from the second window 251, the lattice structure 254 can be configured to surround the space overlapping with the first window 250. For example, the lattice structure 254 can be arranged in a ring along the sidewall 350a of the frame 253 forming the opening OP1, to form a space OP2 in which the lattice structure 254 is not present in the center. According to this example, the arrival rate of light from the plasma processing space 10s to the detector 201 is improved. Alternatively, the lattice structure 254 can also be arranged not along the entire circumference of the sidewall 350a of the frame 253, but only a portion of it.

[0095] The above exemplary embodiments are applicable to capacitively coupled plasma processing apparatuses, but are not limited thereto, and can also be applied to other plasma apparatuses. For example, instead of capacitively coupled plasma processing apparatuses, they can be applied to inductively coupled plasma processing apparatuses.

[0096] In the above embodiments, plasma processing apparatus 1 was described as an example, but it is not limited thereto. For example, it can also be applied to a substrate processing apparatus that does not use plasma. In this case, the substrate processing apparatus includes a chamber having a substrate processing space and a viewport mounted on the chamber. The viewport includes a frame defining a first space communicating with the substrate processing space, a first window, and a lattice structure disposed within the first space between the first window and the substrate processing space.

[0097] In one embodiment, in addition to a viewport, the substrate processing apparatus may also have a lattice structure. In this case, the substrate processing apparatus includes a chamber having a substrate processing space, a component having a first space communicating with the substrate processing space, and a lattice structure disposed within the first space. For example, as... Figure 14 As shown, the plasma processing apparatus 1 may have a gas outlet 10e and an exhaust system 40, which are components having a first space communicating with the plasma processing space 10s. A lattice structure 400 is disposed at the gas outlet 10e. The lattice structure 400 may be similar to... Figures 6 to 11 The lattice structure 254 is shown. In one embodiment, for example, the plasma processing apparatus 1 may have a tube or recess as a component having a first space communicating with the plasma processing space 10s, and a measuring instrument such as a pressure gauge communicating with the first space, with the lattice structure disposed in the tube or recess.

[0098] The embodiments of this disclosure also include the following aspects.

[0099] (Note 1)

[0100] A plasma processing device comprising:

[0101] A chamber with plasma processing space; and

[0102] The plasma viewport installed in the chamber,

[0103] The plasma viewport includes:

[0104] First window;

[0105] A second window is configured between the first window and the plasma processing space;

[0106] A third window configured between the first window and the second window; and

[0107] A lattice structure configured between the second window and the third window.

[0108] (Note 2)

[0109] According to the plasma processing apparatus described in Appendix 1, the first window comprises a quartz material.

[0110] (Note 3)

[0111] According to Appendix 1 or 2, the plasma processing apparatus wherein the third window comprises sapphire material.

[0112] (Note 4)

[0113] According to any one of Appendices 1 to 3, the plasma processing apparatus wherein the second window has a plurality of through holes communicating with the plasma processing space.

[0114] (Note 5)

[0115] According to any one of Appendices 1 to 4, the plasma processing apparatus wherein the lattice structure comprises a ceramic material or anodized aluminum material.

[0116] (Note 6)

[0117] According to any one of Appendices 1 to 5, the plasma processing apparatus wherein the lattice structure has a porosity of 1% to 90%.

[0118] (Note 7)

[0119] The plasma processing apparatus according to any one of claims 1 to 6, wherein the lattice structure has at least one lattice structure selected from the group consisting of an eight-peak structure, a bi-triangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure.

[0120] (Postscript 8)

[0121] According to any one of Appendices 1 to 7, in a plasma processing apparatus, the lattice structure is configured to overlap with the first window when the first window is viewed from the second window.

[0122] (Note 9)

[0123] According to any one of Appendices 1 to 8, in a plasma processing apparatus, when the first window is viewed from the second window, the lattice structure is configured to surround a space overlapping the first window.

[0124] (Postscript 10)

[0125] A substrate processing apparatus comprising:

[0126] A chamber with substrate processing space; and

[0127] The viewport installed in the chamber,

[0128] The viewport includes:

[0129] A frame defining a first space that communicates with the substrate processing space;

[0130] First window; and

[0131] A lattice structure is disposed within the first space between the first window and the substrate processing space.

[0132] (Postscript 11)

[0133] According to the substrate processing apparatus described in Appendix 10, the first window comprises a material selected from the group consisting of quartz, sapphire, YAG and Y2O3.

[0134] (Postscript 12)

[0135] According to Appendix 10 or 11, the substrate processing apparatus wherein the lattice structure comprises a ceramic material or anodized aluminum material.

[0136] (Postscript 13)

[0137] According to any one of Appendix 10 to 12, the substrate processing apparatus wherein the lattice structure has a porosity of 1% to 90%.

[0138] (Postscript 14)

[0139] The substrate processing apparatus according to any one of claims 10 to 13, wherein the lattice structure has at least one lattice structure selected from the group consisting of an eight-peak structure, a double-triangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure.

[0140] (Postscript 15)

[0141] A substrate processing apparatus comprising:

[0142] A chamber with a substrate processing space;

[0143] A component having a first space communicating with the substrate processing space; and

[0144] A lattice structure configured within the first space.

[0145] (Postscript 16)

[0146] The substrate processing apparatus according to claim 15, wherein the substrate processing apparatus further comprises an exhaust system communicating with the substrate processing space via the first space.

[0147] (Postscript 17)

[0148] According to Appendix 15 or 16, the substrate processing apparatus wherein the lattice structure comprises a ceramic material or anodized aluminum material.

[0149] (Postscript 18)

[0150] According to any one of Appendices 15 to 17, the substrate processing apparatus wherein the lattice structure has a porosity of 1% to 90%.

[0151] (Postscript 19)

[0152] According to any one of claims 15 to 18, the substrate processing apparatus wherein the lattice structure has at least one lattice structure selected from the group consisting of an eight-peak structure, a double-triangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure.

[0153] The above embodiments are described for illustrative purposes only and are not intended to limit the scope of this disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of this disclosure. For example, some components of one embodiment can be added to other embodiments. Furthermore, some components of one embodiment can be replaced with corresponding components in other embodiments.

Claims

1. A plasma processing apparatus, comprising: The chamber contains a plasma processing space; and The plasma viewing port is installed in the chamber. The plasma viewport includes: First window; The second window is positioned between the first window and the plasma processing space. A third window is positioned between the first and second windows; and A lattice structure is disposed between the second window and the third window.

2. The plasma processing apparatus according to claim 1, wherein, The first window contains quartz material.

3. The plasma processing apparatus according to claim 2, wherein, The third window contains sapphire material.

4. The plasma processing apparatus according to claim 3, wherein, The second window has multiple through holes communicating with the plasma processing space.

5. The plasma processing apparatus according to any one of claims 1 to 4, wherein, The lattice structure comprises ceramic material or anodized aluminum material.

6. The plasma processing apparatus according to claim 5, wherein, The lattice structure has a porosity of 1% to 90%.

7. The plasma processing apparatus according to claim 6, wherein, The lattice structure has at least one lattice structure selected from the group consisting of an octagonal structure, a bitriangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure.

8. The plasma processing apparatus according to claim 5, wherein, When the first window is viewed from the second window, the lattice structure is configured to overlap with the first window.

9. The plasma processing apparatus according to claim 5, wherein, When the first window is viewed from the second window, the lattice structure is configured to surround the space that overlaps with the first window.

10. A substrate processing apparatus comprising: The chamber has a substrate processing space; and A viewport is installed in the chamber. The viewport includes: A frame that defines a first space in communication with the substrate processing space; First window; and A lattice structure is disposed within the first space between the first window and the substrate processing space.

11. The substrate processing apparatus according to claim 10, wherein, The first window contains materials selected from the group consisting of quartz, sapphire, YAG and Y2O3.

12. The substrate processing apparatus according to claim 10 or 11, wherein, The lattice structure comprises ceramic material or anodized aluminum material.

13. The substrate processing apparatus according to claim 12, wherein, The lattice structure has a porosity of 1% to 90%.

14. The substrate processing apparatus according to claim 12, wherein, The lattice structure has at least one lattice structure selected from the group consisting of an octagonal structure, a bitriangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure.

15. A substrate processing apparatus comprising: The chamber has a substrate processing space; The component has a first space communicating with the substrate processing space; and A lattice structure is disposed within the first space.

16. The substrate processing apparatus according to claim 15, wherein, The substrate processing apparatus further includes an exhaust system that communicates with the substrate processing space via the first space.

17. The substrate processing apparatus according to claim 15 or 16, wherein, The lattice structure comprises ceramic material or anodized aluminum material.

18. The substrate processing apparatus according to claim 17, wherein, The lattice structure has a porosity of 1% to 90%.

19. The substrate processing apparatus according to claim 17, wherein, The lattice structure has at least one lattice structure selected from the group consisting of an octagonal structure, a bitriangular structure, a dodecahedral structure, a tetradiagonal structure, a star structure, and a tridiagonal structure.

Images