Magnetron, magnetron assembly and semiconductor process apparatus

Abstract

The application discloses a magnetron, a magnetron assembly and a semiconductor process equipment, the disclosed magnetron comprises a back plate, a first magnetic pole and a second magnetic pole, the first magnetic pole comprises a plurality of first magnetic columns, the plurality of first magnetic columns are arranged on the back plate and are sequentially distributed along a first contour, the second magnetic pole comprises a plurality of second magnetic columns, the plurality of second magnetic columns are arranged on the back plate and are sequentially distributed along a second contour, the first contour surrounds outside the second contour, and the geometric shape of the first contour is different from the geometric shape of the second contour, the polarity of the first magnetic column is opposite to the polarity of the second magnetic column, the first contour and the second contour are both closed contours, the first contour is a circular contour, the second contour comprises a first circular arc segment and a concave segment, and the concave segment is recessed to one side of the center of the circular contour. The above scheme can solve the problem of poor uniformity of the deposition film thickness of the semiconductor process equipment in the related art.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more particularly to a magnetron, a magnetron assembly, and semiconductor process equipment. Background Technology

[0002] Magnetron sputtering technology is widely used in semiconductor manufacturing and other fields due to its advantages such as fast deposition rate and stable film quality. As the core component of a magnetron sputtering system, the magnetic field distribution generated by the magnetron directly affects the plasma state and the erosion uniformity of the sputtering target, thus determining the thickness uniformity of the deposited film.

[0003] As semiconductor devices evolve towards high aspect ratio structures, related technologies employ semiconductor process equipment with a larger target-to-substrate spacing (≥100mm) to improve step coverage. This enhances the collimation of sputtered particles and improves step coverage. However, while improving particle collimation, it also leads to poorer film thickness uniformity, thus limiting further improvements in semiconductor device performance. Summary of the Invention

[0004] This invention discloses a magnetron, a magnetron assembly, and semiconductor process equipment to solve the problem of poor uniformity in the thickness of thin films deposited in semiconductor process equipment in related technologies.

[0005] To solve the above-mentioned technical problems, the present invention is implemented as follows: In a first aspect, this application discloses a magnetron, which includes a back plate, a first magnetic pole, and a second magnetic pole. The first magnetic pole includes a plurality of first magnetic pillars disposed on the back plate and distributed sequentially along a first contour. The second magnetic pole includes a plurality of second magnetic pillars disposed on the back plate and distributed sequentially along a second contour. The first contour surrounds the second contour, and the geometry of the first contour is different from that of the second contour. The polarity of the first magnetic pillar is opposite to that of the second magnetic pillar. Both the first contour and the second contour are closed contours. The first contour is a circular contour, and the second contour includes a first arc segment and a concave segment. The concave segment is recessed toward the center side of the circular contour.

[0006] Secondly, this application also discloses a magnetron assembly, which includes a housing, a rotary drive, and the magnetron described in the first aspect. The rotary drive is disposed in the housing, and the magnetron is located inside the housing. The output shaft of the rotary drive is connected to the back plate, and the rotary drive is connected to a position on the back plate corresponding to the center of the circle. The rotary drive is used to drive the magnetron to rotate around an axis passing through the center of the circle.

[0007] Thirdly, this application also discloses a semiconductor process apparatus, which includes a cavity, a base, and the magnetron assembly described in the second aspect. The base is disposed in the cavity, and the top of the cavity opposite to the base is an opening for placing a target. The housing is used to connect to the cavity and covers the target. The magnetron is located in the area enclosed by the housing and the target.

[0008] The technical solution adopted in this invention can achieve the following technical effects: The magnetron disclosed in this application configures a first profile to surround a second profile, with the geometry of the first profile differing from that of the second profile. Simultaneously, the first and second magnetic pillars have opposite polarities, creating two opposing and differently shaped magnetic poles on a backplate. Because the first profile surrounds the second profile, a closed magnetic circuit is formed between the first and second magnetic poles, generating a magnetic field near the target surface to confine plasma. More importantly, the different geometries of the first and second profiles break the symmetrical layout of similar inner and outer magnetic pole shapes (like concentric circles) in traditional magnetrons. This shape difference creates an asymmetrical magnetic field strength distribution in space: in some circumferential regions, the distance between the first and second magnetic poles is closer, resulting in a stronger magnetic field; in other circumferential regions, the distance is greater, resulting in a weaker magnetic field. As the magnetron rotates around its axis of rotation, this asymmetrical magnetic field distribution changes over time, dynamically adjusting the sputtering area on the target surface. Compared to traditional designs with identical inner and outer magnetic pole shapes, this approach avoids a uniform distribution of magnetic field strength along the circumference. It concentrates magnetic field lines in specific angular regions (e.g., areas requiring enhanced sputtering) and weakens the magnetic field in areas needing sputtering suppression, based on actual requirements. Therefore, even without changing the distance between the target and the substrate, selective control of sputtering rates in different radial regions of the target can be achieved simply by altering the geometric differences in the magnetic poles, providing a foundation for further optimization of film thickness uniformity. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the magnetron structure disclosed in an embodiment of the present invention; Figure 2 This is a schematic diagram showing the distribution of the first and second magnetic poles of the magnetron disclosed in an embodiment of the present invention; Figure 3 This is an equivalent schematic diagram of the second magnetic pole disclosed in an embodiment of the present invention; Figure 4 This is an equivalent schematic diagram of the first magnetic pole disclosed in an embodiment of the present invention; Figure 5 The structure of the semiconductor process equipment disclosed in the embodiments of the present invention; Figure 6 and Figure 7 This is a schematic diagram of the magnetic field distribution when using the magnetron disclosed in the embodiments of the present invention; Figure 8 and Figure 9 This is a schematic diagram of the thin film resistance distribution on a wafer deposited using a magnetron as disclosed in an embodiment of the present invention; Figure 10 and Figure 11 This is a schematic diagram of the thin film resistance distribution when using a magnetron in related technologies.

[0010] Explanation of reference numerals in the attached figures: 10-Magnetron 100-back panel, 200 - First magnetic pole, 210 - First magnetic column, 201 - First contour, 201a - Third circular arc segment, 201b - Fourth circular arc segment, 201c - Fifth circular arc segment, 201d - Second circular arc segment 300 - Second magnetic pole, 310 - Second magnetic column, 301 - First circular arc segment, 302 - First straight line segment, 303 - Second straight line segment 400 - First magnetic cover plate, 500 - Second magnetic cover plate 610 - Housing, 620 - Rotary drive component 710 - cavity, 720 - base, 730 - target material, 740 - annular liner. Detailed Implementation

[0011] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0012] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0013] Please refer to Figures 1 to 5 This invention discloses a magnetron that can be used in semiconductor process equipment, particularly in long-through magnetron sputtering equipment where the distance between the target 730 and the base 720 is large (e.g., the distance between the target 730 and the base 720 is ≥100mm), to improve the thickness uniformity of the deposited thin film.

[0014] The disclosed magnetron 10 includes a backplate 100, a first magnetic pole 200, and a second magnetic pole 300. The backplate 100 serves as the mounting base for at least some of the other components of the magnetron 10. The backplate 100 can be made of a magnetically conductive material (such as magnetically conductive stainless steel) so that it can provide both magnetic conductivity and support. Of course, the backplate 100 can also be made of non-magnetically conductive materials such as ceramics or quartz. This application does not impose specific limitations on the material of the backplate 100.

[0015] The first magnetic pole 200 includes a plurality of first magnetic pillars 210, which are disposed on the back plate 100. The first magnetic pillars 210 can be fixedly installed on the back plate 100 by means of adhesive bonding, plugging, or other methods. The plurality of first magnetic pillars 210 are distributed sequentially along the first contour 201.

[0016] The second magnetic pole 300 includes a plurality of second magnetic pillars 310, which are disposed on the back plate 100. The second magnetic pillars 310 can be fixedly installed on the back plate 100 by means of adhesive bonding, plugging, or other methods. The plurality of second magnetic pillars 310 are distributed sequentially along the second contour.

[0017] The plurality of first magnetic pillars 210 of the first magnetic pole 200 and the plurality of second magnetic pillars 310 of the second magnetic pole 300 are all located on the same side of the back plate 100.

[0018] The first contour 201 surrounds the second contour, and the geometry of the first contour 201 differs from that of the second contour. The polarity of the first magnetic pillar 210 is opposite to that of the second magnetic pillar 310; for example, the first magnetic pillar 210 is the N pole and the second magnetic pillar 310 is the S pole, or vice versa. Thus, on the backplate 100, the plurality of first magnetic pillars 210 and the plurality of second magnetic pillars 310 respectively form two magnetic poles with opposite polarities, thereby forming a closed magnetic circuit between the plurality of first magnetic pillars 210 and the plurality of second magnetic pillars 310. The magnetic circuit is used to generate a magnetic field near the surface of the target material 730 to confine the plasma.

[0019] The magnetron 10 disclosed in this application configures a first profile 201 to surround a second profile, and the geometry of the first profile 201 differs from that of the second profile. Simultaneously, the first magnetic pillars 210 and the second magnetic pillars 310 have opposite polarities, resulting in multiple first magnetic pillars 210 and multiple second magnetic pillars 310 forming two magnetic poles with opposite polarities and different shapes on the backplate 100. Since the first profile 201 surrounds the second profile, a closed magnetic circuit is formed between the first magnetic pole 200 and the second magnetic pole 300, used to generate a magnetic field near the surface of the target material 730 to confine plasma. More importantly, the different geometries of the first profile 201 and the second profile break the symmetrical layout of similar inner and outer magnetic pole shapes (like concentric circles) in traditional magnetrons. This shape difference creates an asymmetrical magnetic field strength distribution in space: in some circumferential regions, the distance between the first magnetic pole 200 and the second magnetic pole 300 is closer, resulting in a stronger magnetic field; in other circumferential regions, the distance is greater, resulting in a weaker magnetic field. As the magnetron 10 rotates around its axis, this asymmetric magnetic field distribution changes over time, dynamically adjusting the sputtering area on the target 730 surface. Compared to traditional designs with identical inner and outer magnetic pole shapes, this approach avoids a uniform distribution of magnetic field strength along the circumferential direction. It concentrates magnetic field lines in specific angular regions (e.g., areas requiring enhanced sputtering) and weakens the magnetic field in areas requiring sputtering suppression, based on actual needs. Therefore, even without changing the distance between the target 730 and the substrate 720, selective control of the sputtering rate in different radial regions of the target 730 can be achieved simply by altering the geometric differences in the magnetic poles, providing a foundation for further optimization of film thickness uniformity.

[0020] In specific processes, semiconductor process equipment (such as long-through magnetron sputtering equipment) often exhibits a "thick film in the middle and thin at the edges" phenomenon during magnetron sputtering. The main reason for this is that while particle collimation is improved in long-through magnetron sputtering, the horizontal velocity component of the obliquely moving sputtered particles causes lateral displacement as they travel from the target to the wafer. Since a relatively large number of sputtered particles are generated in the center of the target, these particles (whether vertical or oblique) are more likely to deposit at the wafer center than at the edges, resulting in an excessively fast deposition rate at the center and thus a "thick film in the middle and thin at the edges." To alleviate this problem, optionally, both the first contour 201 and the second contour can be closed contours. The first contour 201 can be a circular contour, and the second contour can include a first arc segment 301 and a concave segment. The two ends of the concave segment can be connected to the two ends of the first arc segment 301, and the concave segment can be recessed towards the center of the circular contour. The center of the first contour 201 can coincide with the center of the circle containing the first arc segment 301. Of course, the center of the first contour 201 can also not coincide with the center of the circle containing the first arc segment 301. This application embodiment does not impose specific restrictions on this.

[0021] The magnetron disclosed in this application sets the first contour 201 as a complete circular contour, so that the first magnetic poles 200 are continuously distributed in the circumferential direction, thereby forming a stable external magnetic field boundary. The second contour is set as a closed contour composed of a first arc segment 301 and an inwardly concave segment, so that the first magnetic pole 200 and the second magnetic pole 300 maintain a roughly constant radial distance within the angle range corresponding to the first arc segment 301, thereby forming a magnetic field region with high intensity and uniformity in this region, which corresponds to the edge region of the target material 730. The concave segment is concave towards the center, so that in the region corresponding to the concave segment, the second magnetic pole 300 is significantly away from the first magnetic pole 200, the radial distance between them increases, and the magnetic field strength is thus greatly weakened, forming a "weak magnetic region", which corresponds to the region near the center of the target material 730.

[0022] When the magnetron 10 rotates around the center (the center of the first contour 201), the strong magnetic field region (corresponding to the first arc segment 301) continuously sweeps across the edge of the target 730, enhancing edge sputtering; the weak magnetic field region (corresponding to the concave segment) continuously sweeps across the center of the target 730, suppressing center sputtering. Through this "strong at the edge, weak at the center" magnetic field distribution, the number of sputtered particles produced in the central region of the target 730 is effectively reduced, while the number of sputtered particles produced in the edge region is relatively enhanced, thereby compensating for the problem of low deposition rate at the wafer edge. Ultimately, the deposition rates at the wafer center and edge tend to be consistent, effectively solving the uniformity defect of "thick film in the middle and thin at the edge" in high-cavity magnetron sputtering equipment.

[0023] Please refer to Figures 2 to 4 The concave segment may include a first straight segment 302 and a second straight segment 303. Specifically, the first end of the first straight segment 302 may be connected to the first end of the first arc segment 301, the first end of the second straight segment 303 may be connected to the second end of the first arc segment 301, and the second end of the first straight segment 302 may be connected to the second end of the second straight segment 303. The connection point between the second ends of the first straight segment 302 and the second ends of the second straight segment 303 may be located inside the circle containing the first arc segment 301. In other words, the second contour as a whole is an arc-shaped structure with a "V"-shaped concave structure, wherein the first arc segment 301 constitutes the arc portion of the contour, and the first straight segment 302 and the second straight segment 303 together constitute a concave segment that is recessed into the arc. In the radial direction, the distance between the first magnetic pole 200 and the second magnetic pole 300 at the corresponding positions of the first arc segment 301 may be between 20mm and 50mm, wherein it may include 20mm and 50mm.

[0024] The magnetron 10 disclosed in this application sets the second contour as a closed contour including a first arc segment 301, a first straight segment 302 and a second straight segment 303. Multiple second magnetic pillars 310 are distributed sequentially along the second contour, thereby forming a tip at the connection between the second end of the first straight segment 302 and the second end of the second straight segment 303. This allows the magnetic field strength to drop sharply from the edge region to the center region, thereby suppressing sputtering at the center of the target material and avoiding excessive sputtering at the center.

[0025] Furthermore, in order to optimize the structure of the concave section and more effectively reduce the number of ions sputtered in the central region of the target 730, optionally, the connection point between the second end of the first straight segment 302 and the second end of the second straight segment 303 can be distributed at intervals with the center of the first contour 201, and the connection point can be located on the side of the center away from the opening of the first arc segment 301, so that the area of ​​the acute angle portion corresponding to the concave section covers the center, thereby more stably weakening the magnetic field strength at the center position, and thus making the magnetic field strength corresponding to the central region of the target 730 weaker when the magnetron 10 rotates.

[0026] Based on the above technical solution, in order to further enhance the local confinement capability of the magnetic field, this embodiment optimizes the arrangement density of the second magnetic pillars 310. Specifically, the distribution density of the multiple second magnetic pillars 310 located on the first straight segment 302 can be greater than the distribution density of the multiple second magnetic pillars 310 located on the first arc segment 301, and the distribution density of the multiple second magnetic pillars 310 located on the second straight segment 303 can also be greater than the distribution density of the multiple second magnetic pillars 310 located on the first arc segment 301. In this way, the multiple second magnetic pillars 310 located on the first straight segment 302 and the multiple second magnetic pillars 310 located on the second straight segment 303 have the same polarity, which can enhance the magnetic resistance of the corresponding region of the concave segment, thereby further weakening the magnetic field strength of the region and forming a more defined "weak magnetic region".

[0027] Optionally, the first central angle α1 corresponding to the opening of the first arc segment 301 (i.e., the central angle corresponding to the concave segment) can be greater than or equal to 60° and less than or equal to 85°. By limiting the first central angle α1 corresponding to the opening of the first arc segment 301 to greater than or equal to 60° and less than or equal to 85°, the problem of an excessively large first central angle α1 (e.g., greater than 85°) leading to an excessively narrow strong magnetic field region, insufficient sputtering at the edge of the target 730, and insufficient improvement in the edge deposition rate can be avoided. At the same time, the problem of too many sputtered particles at the edge of the target 730 and insufficient sputtered particles in the central region of the target 730 can also be avoided if the first central angle α1 is too small (e.g., less than 60°). This numerical range is the result of experimental optimization and can effectively control the sputtering in the central region of the target 730 while improving the sufficient sputtering at the edge of the target 730. It is one of the key parameters for achieving uniformity improvement.

[0028] Furthermore, the plurality of second magnetic pillars 310 located on the first straight segment 302 can be evenly distributed along the first straight segment 302, the plurality of second magnetic pillars 310 located on the second straight segment 303 can be evenly distributed along the second straight segment 303, and the plurality of second magnetic pillars 310 located on the first arc segment 301 can be evenly distributed along the first arc segment 301.

[0029] Specifically, the second central angle α2 corresponding to two adjacent second magnetic pillars 310 on the first arc segment 301 can be greater than or equal to 13° and less than or equal to 18°. By limiting the second central angle α2 corresponding to two adjacent second magnetic pillars 310 on the first arc segment 301, the magnetic field strength in the region of the first arc segment 301 can be optimized. Combined with the design of the first central angle α1, the sputtering at the edge of the target material 730 can be improved while effectively controlling the sputtering in the central region of the plate material 730.

[0030] The distribution of the multiple first magnetic pillars 210 has also been optimized in this embodiment. Specifically, the first contour 201 may include a second arc segment 201d, the third central angle α3 corresponding to the second arc segment 201d may be 180°, the midpoint of the second arc segment 201d, the center of the first contour 201 and the midpoint of the first arc segment 301 may be located on the same straight line, and the second arc segment 201d may be located on the side of the center away from the opening of the first arc segment 301. The multiple first magnetic pillars 210 located on the second arc segment 201d may be distributed at intervals.

[0031] More specifically, the fourth central angle α4 corresponding to two adjacent first magnetic pillars 210 on the second arc segment 201d can be greater than or equal to 11° and less than or equal to 15°. By limiting the range of the third central angle α3 and the fourth central angle α4, the first magnetic pole 200 provides an appropriate magnetic flux in the region corresponding to the second arc segment 201d, and works with the second magnetic pole 300 to form the required magnetic field gradient, further strengthening the magnetic field distribution characteristics of "weak at the center and strong at the edges".

[0032] In an optional embodiment, the plurality of first magnetic pillars 210 located on the second arc segment 201d include a plurality of first magnetic pillars 210 with a first diameter and a plurality of first magnetic pillars 210 with a second diameter, the plurality of first magnetic pillars 210 with the first diameter and the plurality of first magnetic pillars 210 with the second diameter being alternately distributed, the first diameter being different from the second diameter.

[0033] This embodiment of the application, by employing alternating arrangements of first magnetic pillars 210 with different diameters, can further adjust the magnetic field strength in the region, resulting in a smoother magnetic field distribution. Specifically, the first diameter can be larger than the second diameter; for example, the first diameter can range from 16 to 22 mm, and the second diameter can range from 8 to 14 mm. Of course, the first and second diameters can also be in other ranges, and this embodiment of the application does not impose specific limitations on them. In this embodiment of the application, other first magnetic pillars 210 and second magnetic pillars 310 can all be magnetic pillars with diameters ranging from 16 to 22 mm. Of course, the diameters of other first magnetic pillars 210 and second magnetic pillars 310 can also be in other ranges, and this embodiment of the application does not impose specific limitations on them.

[0034] Furthermore, the first contour 201 may also include a third arc segment 201a, which may be opposite to the opening of the first arc segment 301. The midpoint of the first arc segment 301, the midpoint of the third arc segment 201a, and the center of the first contour 201 may be located on the same straight line. The fifth central angle α5 corresponding to the third arc segment 201a may be greater than or equal to 40° and less than or equal to 65°, and the multiple first magnetic pillars 210 located on the third arc segment 201a are distributed at intervals. Specifically, the sixth central angle α6 corresponding to two adjacent first magnetic pillars 210 located on the third arc segment 201a may be greater than or equal to 11° and less than or equal to 15°. The first central angle corresponding to the opening of the first arc segment 301 may be greater than or equal to 60° and less than or equal to 85°, and the ratio of the first central angle to the fifth central angle may be less than 1.5.

[0035] Furthermore, the first contour 201 may also include a fourth arc segment 201b and a fifth arc segment 201c located on either side of the third arc segment 201a. The distribution density of the plurality of first magnetic pillars 210 located on the fourth arc segment 201b may be greater than the distribution density of the plurality of first magnetic pillars 210 located on the second arc segment 201d, and the distribution density of the plurality of first magnetic pillars 210 located on the fifth arc segment 201c may be greater than the distribution density of the plurality of first magnetic pillars 210 located on the second arc segment 201d. The central angle of the fourth arc segment 201b, the third arc segment 201a, and the fifth arc segment 201c is 180°, and the first magnetic pillars 210 in the fourth arc segment 201b, the third arc segment 201a, and the fifth arc segment 201c may all be large-diameter (i.e., first diameter) magnetic pillars.

[0036] The magnetron 10 disclosed in this application adopts the arrangement of the plurality of first magnetic pillars 210 of the first magnetic pole 200 and the plurality of second magnetic pillars 310 of the second magnetic pole 300, so that the magnetron 10 can form a specific asymmetric magnetic field distribution: in the region corresponding to the concave section, due to the larger arrangement density of the second magnetic pillars 310 of the second magnetic pole 300 (that is, the larger arrangement density of the second magnetic pillars 310 located on the first straight segment 302 and the second straight segment 303), the spacing between the first magnetic pole 200 and the first magnetic pillars 210 in the region corresponding to the concave section is relatively sparse, so the magnetic field strength corresponding to the concave section region is relatively weak; while in the region corresponding to the first arc segment 301, the spacing between the second magnetic pillars 310 of the second magnetic pole 300 is relatively sparse, while the arrangement density of the first magnetic pillars 210 in at least a part of the corresponding region of the first magnetic pole 200 is relatively large, so the magnetic field strength in this region is relatively strong. With the line connecting the center of the first contour 201 and the midpoint of the first arc segment 301 as the axis of symmetry, multiple first magnetic pillars 210 and multiple second magnetic pillars 310 can be symmetrically distributed about the axis of symmetry.

[0037] Please refer to Figure 6 and Figure 7 , Figure 6 and Figure 7 This is a schematic diagram of the magnetic field distribution of the magnetron 10 disclosed in this application when the first magnetic pole 200 and the second magnetic pole 300 are arranged as described above. Figure 6 As can be seen, the magnetic field strength is high in the region between the first arc segment 301 and the first magnetic pole 200, with a magnetic field strength greater than 25 mt; the magnetic field strength is low in the region corresponding to the concave segment, with a magnetic field strength less than 15 mt.

[0038] Please refer to Figure 8 and Figure 9 , Figure 8 and Figure 9 The schematic diagram of the thin film resistance distribution of the wafer deposited by the magnetron 10 disclosed in this application, when the first magnetic pole 200 and the second magnetic pole 300 are arranged as described above, shows that the average resistance is 58.18 mΩ and the film thickness uniformity is about 1.76%.

[0039] Please refer to Figure 10 and Figure 11 , Figure 10 and Figure 11 This is a schematic diagram of the thin film resistance distribution in wafer deposition in related technologies. The average resistance is 59.64 mΩ, and the film thickness uniformity is about 4.91%.

[0040] Obviously, through Figure 7 and Figure 8 Analysis shows that the magnetron 10 disclosed in the embodiments of this application can significantly improve the uniformity of film thickness compared with related technologies.

[0041] To further improve the closing efficiency of the magnetic circuit and the uniformity of the magnetic field distribution, the magnetron 10 may optionally include a first magnetically conductive cover plate 400 and a second magnetically conductive cover plate 500. The shape of the first magnetically conductive cover plate 400 can be adapted to the first contour 201. The first magnetically conductive cover plate 400 can be connected to a plurality of first magnetic pillars 210 located on the first contour 201 and covers the side of the plurality of first magnetic pillars 210 opposite to the back plate 100. The shape of the second magnetically conductive cover plate 500 can be adapted to the second contour. The second magnetically conductive cover plate 500 can be connected to a plurality of second magnetic pillars 310 located on the second contour and covers the side of the plurality of second magnetic pillars 310 opposite to the back plate 100. The back plate 100 can also be a magnetically conductive component. In this way, the back plate 100, the first magnetically conductive cover plate 400, and the second magnetically conductive cover plate 500 together constitute a magnetically conductive circuit, which can effectively reduce magnetic leakage and enhance the magnetic field coupling between the magnetic pillars.

[0042] The present invention also discloses a magnetron assembly, which includes a housing 610, a rotary drive 620, and the magnetron 10 disclosed in the above embodiments. The rotary drive 620 may be disposed in the housing 610, and the magnetron 10 may be located inside the housing 610. The output shaft of the rotary drive 620 may be connected to the back plate 100, and the rotary drive 620 may be connected to the back plate 100 at a position corresponding to the center of the circle. The rotary drive 620 is used to drive the magnetron 10 to rotate inside the housing 610. For example, the rotary drive 620 drives the magnetron 10 to rotate around an axis perpendicular to the back plate 100 and passing through the center of the circle.

[0043] The magnetron assembly disclosed in this application employs the magnetron 10 disclosed in the above embodiments. When the magnetron 10 rotates around its rotation axis, this asymmetric magnetic field distribution changes over time, dynamically adjusting the sputtering area on the surface of the target 730. Compared to the traditional design with identical inner and outer magnetic pole shapes, this solution avoids a uniform distribution of magnetic field strength in the circumferential direction. It concentrates magnetic lines of force in specific angular regions (e.g., regions requiring enhanced sputtering) and weakens the magnetic field in regions requiring suppressed sputtering, based on actual needs. Therefore, even without changing the distance between the target 730 and the base 720, selective control of the sputtering rate in different radial regions of the target 730 can be achieved simply by changing the geometric differences of the magnetic poles, providing a foundation for further optimization of film thickness uniformity.

[0044] The present invention also discloses a semiconductor process apparatus, which includes a cavity 710, a base 720, and a magnetron assembly disclosed in the above embodiments. The base 720 is disposed inside the cavity 710. The top of the cavity 710 opposite to the base 720 is an opening. The top of the cavity 710 is used to place a target 730. A cover 610 is used to connect to the cavity 710 and covers the target 730. The magnetron 10 is located in the area enclosed by the cover 610 and the target 730.

[0045] It should be noted that the axis perpendicular to the backplate 100 and passing through the center of the circle can coincide with or approximately coincide with the central axis of the base 720. When the wafer is placed on the base 720, the central axis of the wafer also coincides with or approximately coincides with the axis perpendicular to the backplate 100 and passing through the center of the circle. When the target 730 is placed on top of the cavity 710, the central axis of the target 730 can coincide with or approximately coincide with the central axis of the base 720.

[0046] The semiconductor process equipment disclosed in this application employs the magnetron 10 disclosed in the above embodiments. When the magnetron 10 rotates around its rotation axis, this asymmetric magnetic field distribution changes over time, dynamically adjusting the sputtering area on the surface of the target 730. Compared to the conventional design with identical inner and outer magnetic pole shapes, this solution avoids a uniform distribution of magnetic field strength in the circumferential direction. It concentrates magnetic field lines in specific angular regions (e.g., regions requiring enhanced sputtering) and weakens the magnetic field in regions requiring suppressed sputtering, based on actual needs. Therefore, even without changing the distance between the target 730 and the base 720, selective control of the sputtering rate in different radial regions of the target 730 can be achieved simply by changing the geometric differences of the magnetic poles, providing a foundation for further optimization of thin film thickness uniformity.

[0047] Optionally, the semiconductor process equipment also includes an annular liner 740, which is disposed within the cavity 710 and surrounds the base 720 to protect the sidewalls of the cavity 710.

[0048] Here's a further explanation of the principle behind sputtering particle generation. After preparation, gas molecules (such as Ar, He, Kr, Xe, etc.) can be introduced into the cavity 710. A direct current is applied to the target 730 (target 730 is connected to the negative electrode (cathode), and the cavity 710 or base 720 is connected to the positive electrode (anode). Electrons are accelerated under the influence of the electric field and collide with gas atoms to generate plasma. Positive ions in the plasma bombard the surface of the target 730 under the influence of the electric field, "sputtering" target atoms, which are then deposited on the wafer to form a thin film. During the sputtering process, the magnetron 10 can be rotated at a constant speed, ranging from 50 r / min to 100 r / min.

[0049] The above embodiments of the present invention focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0050] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A magnetron, characterized in that, The device includes a back plate (100), a first magnetic pole (200), and a second magnetic pole (300). The first magnetic pole (200) includes a plurality of first magnetic pillars (210), which are disposed on the back plate (100) and distributed sequentially along a first contour. The second magnetic pole (300) includes a plurality of second magnetic pillars (310), which are disposed on the back plate (100) and distributed sequentially along a second contour. The first contour surrounds the second contour, and the geometry of the first contour (201) is different from that of the second contour. The polarity of the first magnetic pillars (210) is opposite to that of the second magnetic pillars (310). Both the first contour (201) and the second contour are closed contours. The first contour (201) is a circular contour. The second contour includes a first arc segment (301) and a concave segment, which is recessed toward the center of the circular contour.

2. The magnetron according to claim 1, characterized in that, The center of the first contour (201) coincides with the center of the circle containing the first arc segment (301).

3. The magnetron according to claim 2, characterized in that, The concave segment includes a first straight segment (302) and a second straight segment (303). The first end of the first straight segment (302) is connected to the first end of the first arc segment (301). The first end of the second straight segment (303) is connected to the second end of the first arc segment (301). The second end of the first straight segment (302) is connected to the second end of the second straight segment (303). The connection point between the second end of the first straight segment (302) and the second end of the second straight segment (303) is located inside the circle containing the first arc segment (301).

4. The magnetron according to claim 3, characterized in that, The connection points of the second end of the first straight segment (302) and the second end of the second straight segment (303) are distributed at intervals from the center of the circle, and the connection points are located on the side of the center of the circle away from the opening of the first arc segment (301).

5. The magnetron according to claim 3, characterized in that, The distribution density of the plurality of second magnetic pillars (310) located on the first straight segment (302) is greater than the distribution density of the plurality of second magnetic pillars (310) located on the first arc segment (301); and / or, the distribution density of the plurality of second magnetic pillars (310) located on the second straight segment (303) is greater than the distribution density of the plurality of second magnetic pillars (310) located on the first arc segment (301).

6. The magnetron according to claim 3, characterized in that, The first central angle corresponding to the opening of the first arc segment (301) is greater than or equal to 60° and less than or equal to 85°.

7. The magnetron according to claim 3, characterized in that, The plurality of second magnetic pillars (310) located on the first straight segment (302) are evenly distributed along the first straight segment (302), the plurality of second magnetic pillars (310) located on the second straight segment (303) are evenly distributed along the second straight segment (303), and / or, the plurality of second magnetic pillars (310) located on the first arc segment (301) are evenly distributed along the first arc segment (301).

8. The magnetron according to claim 3, characterized in that, The second central angle between two adjacent second magnetic pillars (310) located on the first arc segment (301) is greater than or equal to 13° and less than or equal to 18°.

9. The magnetron according to any one of claims 1 to 8, characterized in that, The first contour (201) includes a second arc segment (201d), the third central angle corresponding to the second arc segment (201d) is 180°, the midpoint of the second arc segment (201d), the center of the circle and the midpoint of the first arc segment (301) are on the same straight line, and the second arc segment (201d) is located on the side of the center of the circle away from the opening of the first arc segment (301), and a plurality of the first magnetic pillars (210) on the second arc segment (201d) are distributed at intervals.

10. The magnetron according to claim 9, characterized in that, The fourth central angle between two adjacent first magnetic pillars (210) located on the second arc segment (201d) is greater than or equal to 11° and less than or equal to 15°.

11. The magnetron according to claim 9, characterized in that, The plurality of first magnetic pillars (210) located on the second arc segment (201d) include a plurality of first magnetic pillars (210) with a first diameter and a plurality of first magnetic pillars (210) with a second diameter, the plurality of first magnetic pillars (210) with the first diameter and the plurality of first magnetic pillars (210) with the second diameter being alternately distributed, the first diameter being different from the second diameter.

12. The magnetron according to claim 9, characterized in that, The first contour (201) further includes a third arc segment (201a), the third arc segment (201a) is opposite to the opening of the first arc segment (301), the midpoint of the first arc segment (301), the midpoint of the third arc segment (201a) and the center of the circle are located on the same straight line, the fifth central angle corresponding to the third arc segment (201a) is greater than or equal to 40° and less than or equal to 65°, and a plurality of the first magnetic pillars (210) located on the third arc segment (201a) are distributed at intervals.

13. The magnetron according to claim 12, characterized in that, The sixth central angle between two adjacent first magnetic pillars (210) located on the third arc segment (201a) is greater than or equal to 11° and less than or equal to 15°.

14. The magnetron according to claim 12, characterized in that, The first central angle corresponding to the opening of the first arc segment (301) is greater than or equal to 60° and less than or equal to 85°, and the ratio of the first central angle to the fifth central angle is less than 1.

5.

15. The magnetron according to claim 9, characterized in that, The first contour (201) also includes a fourth arc segment (201b) and a fifth arc segment (201c) located on both sides of the third arc segment (201a). The distribution density of the plurality of first magnetic pillars (210) on the fourth arc segment (201b) is greater than the distribution density of the plurality of first magnetic pillars (210) on the second arc segment (201d), and the distribution density of the plurality of first magnetic pillars (210) on the fifth arc segment (201c) is greater than the distribution density of the plurality of first magnetic pillars (210) on the second arc segment (201d).

16. The magnetron according to claim 1, characterized in that, With the line connecting the center of the first contour (201) and the midpoint of the first arc segment (301) as the axis of symmetry, the plurality of first magnetic pillars (210) and the plurality of second magnetic pillars (310) are symmetrically distributed about the axis of symmetry.

17. The magnetron according to claim 1, characterized in that, The magnetron (10) further includes a first magnetic cover plate (400) and a second magnetic cover plate (500). The shape of the first magnetic cover plate (400) is adapted to the first contour (201). The first magnetic cover plate (400) is connected to a plurality of first magnetic pillars (210) located on the first contour (201) and covers the side of the plurality of first magnetic pillars (210) opposite to the back plate (100). The shape of the second magnetic cover plate (500) is adapted to the second contour. The second magnetic cover plate (500) is connected to a plurality of second magnetic pillars (310) located on the second contour and covers the side of the plurality of second magnetic pillars (310) opposite to the back plate (100).

18. A magnetron assembly, characterized in that, The device includes a housing (610), a rotary drive (620), and a magnetron (10) as described in any one of claims 1 to 17. The rotary drive (620) is disposed in the housing (610), and the magnetron (10) is located inside the housing (610). The output shaft of the rotary drive (620) is connected to the back plate (100) for driving the magnetron (10) to rotate inside the housing (610).

19. A semiconductor process apparatus, characterized in that, The assembly includes a cavity (710), a base (720), and a magnetron assembly as described in claim 18. The base (720) is disposed within the cavity (710). The top of the cavity (710) opposite to the base (720) is an opening for placing a target (730). A cover (610) is used to connect to the cavity (710) and covers the target (730). The magnetron (10) is located in the area enclosed by the cover (610) and the target (730).

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