Ion implantation apparatus and method, ion implantation adjustment device

Abstract

This application provides an ion implantation apparatus and method, and an ion implantation adjustment device. The ion implantation apparatus includes: a first movable stage for supporting a first substrate; a second movable stage for supporting a second substrate; and a beam generating device for generating an ion beam to be implanted into the first substrate and the second substrate respectively along a first direction. The first and second movable stages move at least along a second direction, which intersects the first direction. The distance between the second movable stage and the beam generating device in the first direction is greater than the distance between the first movable stage and the beam generating device in the first direction. The moving speed of the second movable stage is less than the moving speed of the first movable stage. The ion implantation apparatus provided by this application compensates for distance differences by adjusting the speed, thereby reducing the difference in implantation dose between the first and second substrates, solving the problem of dose inhomogeneity caused by different stage positions, and improving product uniformity.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment technology, and in particular to an ion implantation device and method, and an ion implantation adjustment apparatus. Background Technology

[0002] Ion implantation is a standard technique for introducing impurities that alter the conductivity of semiconductor materials. The desired impurity material is ionized in an ion source, and the ions are accelerated into an ion beam with a specified energy. This ion beam is then aligned with the surface of a wafer or plate. The high-energy ions in the beam penetrate deep into the bulk of the semiconductor material and embed themselves in the crystal lattice, forming regions with the desired conductivity.

[0003] However, current ion implantation equipment suffers from the problem of electrical inhomogeneity after substrate implantation. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide an ion implantation device and method, and an ion implantation adjustment device, so as to improve the uniformity and quality of the product.

[0005] For the purposes described above, this application provides an ion implantation device, which includes:

[0006] A first movable stage is used to support a first substrate;

[0007] The second movable stage is used to support the second substrate;

[0008] A beam generating device for generating ion beams that are injected into the first substrate and the second substrate respectively along a first direction;

[0009] The first movable stage and the second movable stage move at least along a second direction, which intersects with the first direction; the distance between the second movable stage and the beam generating device in the first direction is greater than the distance between the first movable stage and the beam generating device in the first direction.

[0010] The relationship between the moving speed of the second moving platform and the moving speed of the first moving platform satisfies the first formula:

[0011] V2 = V1(1 - ΔD / D1);

[0012] Wherein, V1 is the moving speed of the first moving platform; V2 is the moving speed of the second moving platform; D1 is the distance between the first moving platform and the beam generating device in the first direction; ΔD = D2 - D1, and D2 is the distance between the second moving platform and the beam generating device in the first direction.

[0013] In one embodiment, the ion implantation apparatus further includes:

[0014] A first driving mechanism is connected to the first movable platform and is used to drive the first movable platform to move along the second direction;

[0015] The second drive mechanism is connected to the second movable platform and is used to drive the second movable platform to move along the second direction;

[0016] Preferably, the second direction is perpendicular to the first direction.

[0017] In one embodiment, the ion implantation apparatus further includes:

[0018] The control unit is electrically connected to at least the second drive mechanism and is used to adjust the moving speed of the second moving platform;

[0019] Preferably, the control unit is electrically connected to the first drive mechanism and is used to adjust the moving speed of the first moving platform.

[0020] In one embodiment, the ion implantation apparatus further includes:

[0021] A speed sensor is used to monitor the real-time moving speed of the first moving platform and the second moving platform; the speed sensor is electrically connected to the control unit and is used to feed back the real-time moving speed to the control unit.

[0022] In one embodiment, the ion implantation device includes:

[0023] A process chamber, wherein the first movable stage and the second movable stage are located within the process chamber;

[0024] Preferably, the process chamber is a vacuum chamber;

[0025] Preferably, the vacuum level of the process chamber is in the range of 0.001 Pa to 0.002 Pa.

[0026] In one embodiment, the ion implantation device includes:

[0027] A beam analysis device is located between the beam generation device and the process chamber.

[0028] Based on the same inventive concept, this application also provides an ion implantation method, which includes:

[0029] The first substrate is placed on the first movable platform, and the second substrate is placed on the second movable platform;

[0030] The first moving stage is controlled to move along the second direction, and the first substrate is implanted by the ion beam generated by the beam generating device along the first direction.

[0031] The second moving stage is controlled to move along the second direction, and the second substrate is implanted with an ion beam generated by the beam generating device along the first direction; wherein the second direction intersects the first direction; the distance between the second moving stage and the beam generating device in the first direction is greater than the distance between the first moving stage and the beam generating device in the first direction.

[0032] The relationship between the moving speed of the second moving platform and the moving speed of the first moving platform satisfies the first formula:

[0033] V2 = V1(1 - ΔD / D1);

[0034] Wherein, V1 is the moving speed of the first moving platform; V2 is the moving speed of the second moving platform; D1 is the distance between the first moving platform and the beam generating device in the first direction; ΔD = D2 - D1, and D2 is the distance between the second moving platform and the beam generating device in the first direction.

[0035] In one embodiment, controlling the second moving platform to move along the second direction includes:

[0036] Monitor the real-time moving speed of the second mobile platform and feed the real-time moving speed back to the control unit;

[0037] Based on the real-time moving speed and the injection dose requirement of the second substrate, the control unit adjusts the moving speed of the second moving stage;

[0038] Preferably, controlling the first moving platform to move along the second direction includes:

[0039] Monitor the real-time moving speed of the first mobile platform and feed the real-time moving speed back to the control unit;

[0040] Based on the real-time moving speed and the injection dose requirement of the first substrate, the control unit adjusts the moving speed of the first moving stage.

[0041] Preferably, the second direction is perpendicular to the first direction;

[0042] Preferably, the first substrate is perpendicular to the first direction, and the second substrate is perpendicular to the first direction.

[0043] Based on the same inventive concept, this application also provides an ion implantation adjustment device, which includes:

[0044] The first movable stage is used to hold the first substrate to be implanted with ions;

[0045] The second movable stage is used to hold the second substrate to be implanted with ions;

[0046] The first moving platform and / or the second moving platform have an adjustable moving speed.

[0047] In one embodiment, the ion implantation adjustment device further includes:

[0048] A speed sensor is used to monitor the real-time moving speed of the first moving platform and the second moving platform;

[0049] A control unit is electrically connected to the speed sensor; the speed sensor is used to feed back the real-time moving speed to the control unit, and the control unit adjusts the moving speed of the first moving stage and / or the second moving stage based on the real-time moving speed and the injection dose requirement.

[0050] Compared with the prior art, the ion implantation device provided in this application can compensate for the ion beam attenuation caused by distance by reducing the moving speed of the second moving stage, thereby reducing the electrical difference between the first substrate and the second substrate respectively carried on the first moving stage and the second moving stage; by adjusting the speed to compensate for the distance difference, the difference in implantation dose between the first substrate and the second substrate is reduced, solving the problem of dose unevenness caused by different stage positions and improving product uniformity. Attached Figure Description

[0051] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0052] Figure 1 A graph showing the distribution of sheet resistance values ​​on the substrates of two moving platforms in related technologies;

[0053] Figure 2 This is a schematic diagram of the structure of an ion implantation device provided in an embodiment of this application;

[0054] Figure 3 This is a schematic diagram of the structure of an ion implantation device provided in another embodiment of this application;

[0055] Figure 4 This is a schematic diagram of the structure of an ion implantation device provided in another embodiment of this application;

[0056] Figure 5 This is a schematic flowchart of an ion implantation method provided in an embodiment of this application;

[0057] Figure 6 This is a schematic diagram of the structure of an ion implantation adjustment device provided in an embodiment of this application.

[0058] Marker explanation:

[0059] 100. Ion implantation equipment; 1. Beam generation device; 10. Ion beam; 20. Ion implantation adjustment device; 21. First moving stage; 22. Second moving stage; 31. First substrate; 32. Second substrate; 41. First driving mechanism; 42. Second driving mechanism; 5. Control unit; 6. Process chamber; 7. Beam analysis device. Detailed Implementation

[0060] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0061] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0062] In the manufacturing process of display devices, ion implantation is one of the key steps. This process involves injecting an ion beam into specific areas of a substrate (such as a glass substrate) to form a semiconductor layer (such as a P-Si layer), thereby controlling the electrical properties of the device.

[0063] The relevant ion implanter equipment uses two moving platforms to carry two substrates respectively. The two moving platforms move alternately into the ion beam region to implant the substrates carried by the moving platforms respectively.

[0064] Through research conducted by the inventors of this application, it has been discovered that in related technologies, the difference in distance between the two moving stages and the beam generating device, especially during small-dose injection, leads to uneven distribution of the sheet resistance (RS) of the film layers on the two substrates, affecting the uniformity of the electrical performance of the substrate products.

[0065] Figure 1 This graph shows the sheet resistance (RS) distribution of substrates on two moving stages in related technologies. At a vacuum level PPC = 0.0015 Pa, the average RS value of the substrate on the first moving stage (PLT1) is 3972.769, the median is 3956.92, the standard deviation is 224.81, and the number of data points is 1095. The average RS value of the second moving stage (PLT2) is 4139.762, the median is 4130.70, the standard deviation is 224.81, and the number of data points is 1139. As can be seen from the graph, at the same PPC value, the RS value of PLT2 is generally higher than that of PLT1. This is mainly due to the different distances between the two moving stages and the ion beam, resulting in differences in ion injection doses and thus differences in the electrical properties between the different substrates.

[0066] Based on this, this application provides an ion implantation device and method, and an ion implantation adjustment apparatus, to solve the above problems.

[0067] like Figure 2 As shown in the figure, this application provides an ion implantation device 100, which includes a beam generating device 1, a first moving stage 21, and a second moving stage 22. The first moving stage 21 is used to carry a first substrate 31 and moves along a second direction (Y direction in the figure). The second moving stage 22 is used to carry a second substrate 32 and moves along the second direction. The beam generating device 1 generates an ion beam 10, which can be injected into the first substrate 31 and the second substrate 32 along a first direction (X direction in the figure). The second direction intersects with the first direction. The distance between the second moving stage 22 and the beam generating device 1 in the first direction is greater than the distance between the first moving stage 21 and the beam generating device 1 in the first direction. The relationship between the moving speed of the second moving stage 22 and the moving speed of the first moving stage 21 satisfies the following first formula:

[0068] V2 = V1(1 - ΔD / D1);

[0069] Wherein, V1 is the moving speed of the first moving platform; V2 is the moving speed of the second moving platform; D1 is the distance between the first moving platform and the beam generating device in the first direction; ΔD = D2 - D1, and D2 is the distance between the second moving platform and the beam generating device in the first direction.

[0070] As can be seen from the first formula, the moving speed V2 of the second moving platform 22 is less than the moving speed V1 of the first moving platform 21.

[0071] Specifically, the ion implantation equipment 100 is a dual-stage ion implantation equipment, which can be applied in display panel manufacturing. For example, using the ion implantation equipment 100 of this application to dope the P-Si layer of a glass substrate can solve the problem of uneven implantation dose caused by distance differences in traditional dual-stage systems. During ion implantation, the first substrate 31 and the second substrate 32 are located on the same side of the beam generating device 1, and the first substrate 31 and the second substrate 32 are positioned facing the beam generating device 1. The first substrate 31 is carried by the first moving stage 21, located near the beam generating device 1. The second substrate 32 is carried by the second moving stage 22, located behind the first moving stage 21, at a greater distance from the beam generating device 1. The first substrate 31 and the second substrate 32 move with the first moving stage 21 and the second moving stage 22, respectively, so that ions in the ion beam 10 are implanted into the first substrate 31 and the second substrate 32 sequentially. For example, during the implantation stage, the first moving stage 21 and the second moving stage 22 move alternately into the beam region. The first moving stage 21 and the second moving stage 22 can repeatedly move and scan along the second direction to perform ion implantation. Because the second moving stage 22 is farther away, the ion beam attenuates during transmission. According to the first formula V2=V1(1-ΔD / D1), the moving speed of the second moving stage 22 is controlled to be lower than that of the first moving stage 21 to extend the residence time of the second substrate 32 in the beam region and compensate for dose loss. The first moving stage 21 and the second moving stage 22 move alternately to ensure continuous implantation and improve production efficiency.

[0072] For example, if D1 = 100 mm and D2 = 103 mm, then ΔD = 3 mm, and the compensation ratio ΔD / D1 = 3%. At this time, V2 = 97%V1. Since the moving speed of the second moving stage 22 is relatively low, the substrate takes longer to reach the ion beam contact area during the process, resulting in an increased implanted ion quantity. This compensates for the difference in implanted quantity caused by the distance difference, and also compensates for the difference in RS values ​​between the first substrate 31 and the second substrate 32.

[0073] In the ion implantation apparatus 100 provided in this embodiment, the first moving stage 21 and the second moving stage 22 move along a direction intersecting with the ion beam 10. The second moving stage 22 is farther from the beam generating device 1 and moves at a slower speed. During ion implantation, this ensures that the first substrate 31 and the second substrate 32, respectively supported on the first moving stage 21 and the second moving stage 22, receive appropriate implantation doses. By quantitatively adjusting the distance-speed formula, dose uniformity is ensured. Specifically, reducing the moving speed of the second moving stage 22 compensates for ion beam attenuation caused by distance differences, thereby reducing the electrical (RS) differences between the first substrate 31 and the second substrate 32 supported on the first moving stage 21 and the second moving stage 22, and improving uniformity. By setting a speed difference, implantation dose compensation can be directly achieved without complex mechanical structures, improving implantation uniformity and accuracy, reducing implantation non-uniformity caused by positional differences, and improving product quality.

[0074] like Figure 3 As shown, in one embodiment, the ion implantation device 100 further includes a first driving mechanism 41 and a second driving mechanism 42. The first driving mechanism 41 is connected to the first moving stage 21 and is used to drive the first moving stage 21 to move along a second direction. The second driving mechanism 42 is connected to the second moving stage 22 and is used to drive the second moving stage 22 to move along the second direction. The first moving stage 21 and the second moving stage 22 are driven by the first driving mechanism 41 and the second driving mechanism 42 respectively. Independent driving ensures that the moving speeds of the first moving stage 21 and the second moving stage 22 can be adjusted independently, achieving precise control and further improving the accuracy of the implantation process.

[0075] For example, the first driving mechanism 41 and the second driving mechanism 42 can each employ a servo motor in conjunction with a ball screw, so that the first moving stage 21 and the second moving stage 22 are respectively mounted on the ball screw. This enables high-precision linear movement and ensures that the moving speeds of the first moving stage 21 and the second moving stage 22 are independently adjustable, improving control accuracy and process flexibility. For instance, the first driving mechanism 41 uses a servo motor and a ball screw to drive the first moving stage 21. The second driving mechanism 42 uses an independent driving system of the same specifications as the first driving mechanism 41 to drive the second moving stage 22 to move at a differentiated speed. When injecting into a flexible substrate, the first moving stage 21 moves at a normal speed, while the second moving stage 22, due to its greater distance, reduces its speed to compensate for beam attenuation. The two stages can reciprocate along a second direction to ensure that the ion beam uniformly covers the substrate surface. Independent driving enables the speed control accuracy of the second moving stage 22 to reach ±0.02 mm / s, avoiding dose deviation caused by mechanical errors. The movement path and speed of the two stages can be flexibly adjusted to adapt to the injection requirements of curved or irregularly shaped substrates. Independent drive reduces wear on mechanical parts and extends maintenance intervals by 20%.

[0076] Optionally, the second direction is perpendicular to the first direction. The injection direction of the ion beam 10 is perpendicular to the moving direction of each substrate, which simplifies the movement trajectory of the first moving stage 21 and the second moving stage 22, as well as the supported first substrate 31 and second substrate 32, ensuring the uniformity of the ion beam 10 coverage. For example, it avoids dose gradients caused by oblique movement, thus facilitating a more uniform injection effect. It also simplifies the structural design of the equipment, improving its compactness and ease of operation. Furthermore, the first moving stage 21 and the second moving stage 22 can also move along a third direction, with the third direction, the second direction, and the first direction being perpendicular to each other.

[0077] like Figure 2 As shown, the ion implantation apparatus 100 further includes a control unit 5, which is electrically connected to the second drive mechanism 42 to adjust the moving speed of the second moving stage 22. The control unit 5 can adjust the moving speed in real time, achieving dynamic adjustment to adapt to different process conditions (such as changes in ion beam intensity and vacuum fluctuations), thus realizing closed-loop control.

[0078] For example, in display panel manufacturing, frequent switching of ion implantation process parameters (such as dose and speed) is required. Traditional manual adjustment is inefficient and prone to errors. Control unit 5 can communicate in real-time with the dual-drive mechanism via a bus. Functional modules can preset process formula libraries, supporting automatic calculation of compensation speed and generation of control commands. During operation, the operator selects the target process and inputs the distance difference between the two stages and the beam generation device. Control unit 5 calculates the moving speed of the second moving stage 22 according to the first formula and synchronously adjusts the two drive mechanisms. Real-time monitoring of beam intensity and vacuum level allows for fine-tuning of the speed to adapt to process fluctuations. This reduces the time required for manual adjustment from 30 minutes to 5 minutes, increasing production efficiency by 40%. Closed-loop control ensures that the implantation dose deviation is less than ±2%, meeting the requirements of high-precision chip manufacturing. Simultaneously, it reduces manual intervention and minimizes the loss of good products due to operational errors.

[0079] Optionally, the control unit 5 is also electrically connected to the first drive mechanism 41 to adjust the moving speed of the first moving platform 21. The control unit 5 can simultaneously adjust the moving speeds of the first moving platform 21 and the second moving platform 22, enabling collaborative operation of the two platforms and further optimizing overall process stability.

[0080] Furthermore, the ion implantation apparatus 100 also includes a velocity sensor for monitoring the real-time movement speed of the first moving stage 21 and the second moving stage 22. The velocity sensor is also electrically connected to the control unit 5 to feed back the real-time movement speed data to the control unit 5. The velocity sensor provides real-time feedback of the movement speed and, combined with the control unit 5, forms a closed-loop system. This allows the control unit 5 to make more precise adjustments based on the actual movement speed, reducing speed deviations (e.g., ±0.05 mm / s) and preventing dose unevenness due to mechanical errors. Additionally, the real-time movement speed data monitored by the velocity sensor can be used to trigger alarms (e.g., out-of-tolerance shutdown) to prevent the generation of batch defective products.

[0081] like Figure 2 As shown, in one embodiment, the ion implantation apparatus 100 includes a process chamber 6, with a first movable stage 21 and a second movable stage 22 located within the process chamber 6.

[0082] Optionally, process chamber 6 is a vacuum chamber.

[0083] Optionally, the vacuum level of process chamber 6 can range from 0.001 Pa to 0.002 Pa. For example, the vacuum level of process chamber 6 can be 0.001 Pa, 0.0011 Pa, 0.0013 Pa, 0.0015 Pa, 0.0016 Pa, 0.0017 Pa, 0.0018 Pa, 0.002 Pa, etc.

[0084] For example, a semiconductor production line performs ion implantation in a high vacuum (0.0015 Pa) environment, requiring real-time monitoring of the stage speed to ensure accurate dosing. A laser displacement sensor is used as the speed sensor, installed beside the guide rails of the first and second moving stages 21 and 22, respectively, to collect the moving speed in real time. Sensor data is transmitted to the control unit via optical fiber, forming a closed-loop control system. During operation, before equipment startup, the sensor automatically calibrates the initial stage position and speed reference. Furthermore, the chamber is evacuated to the target vacuum level before implantation to reduce collisions between ions and gas molecules. During implantation, the sensor collects data at a frequency of 1 ms. If the speed deviation exceeds a threshold (e.g., ±0.05 mm / s), the control unit immediately adjusts the drive parameters. The ion beam propagates linearly in the high vacuum environment, reducing scattering and ensuring dose uniformity. Thus, speed fluctuations are reduced and dose stability is improved in the high vacuum environment. Abnormal sensor data can trigger shutdown protection to prevent batch defects. Speed ​​data is linked to the implantation timestamp, facilitating subsequent quality analysis and process optimization. The vacuum environment reduces beam energy attenuation and improves the consistency of implantation depth. After optimizing the chamber vacuum, the particle contamination rate on the substrate surface decreased by 50%, and the AOI inspection pass rate improved.

[0085] The placement of the first moving stage 21 and the second moving stage 22 within the process chamber 6 reduces beam scattering caused by gas molecule collisions, ensuring ion beam stability and improving implantation stability and quality. Simultaneously, the vacuum chamber design reduces gas scattering, ensuring beam stability and lowering the risk of substrate surface contamination. This contributes to improved ion beam energy and transmission efficiency, further enhancing the implantation effect. The vacuum environment prevents particulate matter from adhering to the substrate surface, reducing the anomaly rate of automated optical inspection (AOI).

[0086] like Figure 4 As shown, the ion implantation equipment 100 further includes a beam analysis device 7, which is located between the beam generation device 1 and the process chamber 6. The beam analysis device 7 is used to screen qualified ion beams, avoid contamination by impurity ions, and improve implantation uniformity and equipment reliability.

[0087] For example, the beam analysis device 7 may include a mass analyzer that filters target ions and removes impurities by using a magnetic field deflection. The beam analysis device 7 also includes an energy analyzer that adjusts the ion beam energy to adapt to different process requirements. During operation, when boron ions are implanted, the beam analysis device 7 filters out other element ions, achieving ion screening. Furthermore, the ion beam energy can be dynamically adjusted to the optimal implantation depth based on the substrate material thickness, achieving energy calibration.

[0088] Specifically, the beam generation device 1 includes an ion source, and the beam analysis device 7 can detect and screen the ion beam emitted by the ion source to avoid equipment damage and contamination caused by unqualified ion beams entering the process chamber 6, thereby improving the quality and efficiency of the ion implantation process. At the same time, multiple ion sources are combined and parallel strip-shaped ion beams can be obtained through processes such as deflection, screening, expansion and collimation, thereby performing high-dose and uniform ion implantation on the substrate.

[0089] In the ion implantation process described above, the control unit 5 adjusts the moving speed of the corresponding moving stage according to the implantation dose requirement and real-time moving speed, which can compensate for the electrical differences caused by distance and improve the uniformity and accuracy of implantation. Specifically, the first substrate 31 and the second substrate 32 are respectively made of glass substrates, which can form a semiconductor layer, such as a P-Si layer, after ion implantation.

[0090] like Figure 5 As shown, another embodiment of this application provides an ion implantation method, which includes the following steps:

[0091] Step S1: Place the first substrate 31 on the first movable stage 21 and place the second substrate 32 on the second movable stage 22.

[0092] Step S2: Control the first moving stage 21 to move along the second direction, and use the ion beam 10 generated by the beam generating device 1 to inject the first substrate 31 along the second direction;

[0093] Step S3: Control the second moving stage 22 to move along the second direction, and use the ion beam 10 generated by the beam generating device 1 to inject the second substrate 32 along the second direction;

[0094] The second direction intersects with the first direction. The distance between the second moving stage 22 and the beam generating device 1 in the first direction is greater than the distance between the first moving stage 21 and the beam generating device 1 in the first direction.

[0095] The relationship between the moving speed of the second moving platform 22 and the moving speed of the first moving platform 21 satisfies the following first formula:

[0096] V2 = V1(1 - ΔD / D1);

[0097] Wherein, V1 is the moving speed of the first moving platform; V2 is the moving speed of the second moving platform; D1 is the distance between the first moving platform and the beam generating device in the first direction; ΔD = D2 - D1, and D2 is the distance between the second moving platform and the beam generating device in the first direction.

[0098] For example, if D1 = 100 mm and D2 = 103 mm, then ΔD = 3 mm, and the compensation ratio ΔD / D1 = 3%. At this time, V2 = 97%V1. Since the moving speed of the second moving stage 22 is relatively low, the substrate takes longer to reach the ion beam contact area during the process, resulting in an increased implanted ion quantity. This compensates for the difference in implanted quantity caused by the distance difference, and also compensates for the difference in RS values ​​between the first substrate 31 and the second substrate 32.

[0099] Specifically, during substrate loading, the first moving stage 21 and the second moving stage 22 respectively carry the first substrate 31 and the second substrate 32. Then, injection is performed alternately. The first moving stage 21 moves at a normal speed to complete the injection of the first substrate 31 and returns to its initial position. The second moving stage 22 moves at a compensated low speed to complete the injection of the second substrate 32, ensuring consistent injection dosage for both substrates. Finally, the first moving stage 21 and the second moving stage 22 continuously alternate in a cyclical operation to achieve continuous production. This dual-stage alternating operation improves production efficiency and increases capacity. Unit product energy consumption decreases, improving equipment utilization. Through speed compensation, the RS difference between the edge and center of the substrate is controlled within 5%, improving the consistency of photoelectric conversion efficiency.

[0100] In the ion implantation method provided in this application embodiment, the first moving stage 21 and the second moving stage 22 are controlled to move along the direction intersecting with the ion beam 10. After the ion beam 10 performs ion implantation on the first substrate 31, it then implants the second substrate 32. The second moving stage 22 is farther away from the beam generating device 1 and moves at a slower speed. By adjusting the speed to compensate for the distance difference, the difference in implantation dose between the first substrate 31 and the second substrate 32 is reduced. By controlling the speed difference, the dose difference caused by the distance is directly compensated, which solves the problem of dose unevenness caused by the difference in stage position, improves product uniformity, and is simple to operate and compatible with existing equipment.

[0101] Further, the step S3 of controlling the second moving platform 22 to move along the second direction includes:

[0102] Step S31: Monitor the real-time moving speed of the second moving platform 22 and feed the real-time moving speed back to the control unit 5;

[0103] Step S32: Based on the real-time moving speed and the injection dose requirement of the second substrate 32, the control unit 5 adjusts the moving speed of the second moving stage 22.

[0104] Optionally, controlling the first moving platform 21 to move along the second direction in step S2 includes:

[0105] Step S21: Monitor the real-time moving speed of the first moving platform 21 and feed the real-time moving speed back to the control unit 5;

[0106] Step S22: Based on the real-time moving speed and the injection dose requirement of the first substrate 31, the control unit 5 adjusts the moving speed of the first moving stage 21.

[0107] Optionally, the second direction is perpendicular to the first direction.

[0108] Optionally, the first substrate 31 is perpendicular to the first direction, and the second substrate 32 is perpendicular to the first direction.

[0109] During ion implantation, the control unit 5 adjusts the movement speed of the moving stage according to the required implantation dose and real-time movement speed, ensuring the accuracy of the implantation dose. Simultaneously, the real-time speed monitoring and feedback mechanism ensures a strict match between the implantation dose and process requirements, making it suitable for high-precision semiconductor manufacturing scenarios. This closed-loop system enables high-precision real-time adjustments, improving process stability.

[0110] like Figure 6 As shown, another embodiment of this application provides an ion implantation adjustment device 20, which includes a first moving stage 21 and a second moving stage 22. The first moving stage 21 is used to support a first substrate 31, and the second moving stage 22 is used to support a second substrate 32. At least one of the first moving stage 21 and the second moving stage 22 has an adjustable moving speed.

[0111] In the ion implantation adjustment device provided in this application embodiment, the moving speed of at least one moving stage can be adjusted independently, which can flexibly adapt to the implantation requirements of different substrates and improve the versatility and applicability of the device. In practical applications, the moving speed of the moving stage can be flexibly adjusted according to factors such as substrate size, material, and implantation dose requirements to achieve the best implantation effect.

[0112] Furthermore, the ion implantation adjustment device 20 also includes a velocity sensor and a control unit 5. The velocity sensor monitors the real-time movement speed of the first moving stage 21 and the second moving stage 22. The control unit 5 is electrically connected to the velocity sensor, which feeds back the real-time movement speed to the control unit 5. The control unit 5 adjusts the movement speed of the first moving stage 21 and / or the second moving stage 22 based on the real-time movement speed and the required implantation dose. By adding the velocity sensor and the control unit 5, real-time movement speed monitoring and feedback of the moving stages are achieved, enabling the control unit 5 to adjust the movement speed of the corresponding moving stages in a timely manner based on real-time data, further improving the precise control capability of the implantation process. This closed-loop control method effectively reduces movement speed errors, ensures the accuracy of the implantation dose, improves product quality and consistency, and also helps to improve the automation level and ease of operation of the equipment. The combination of the adjustable moving stage and the closed-loop control system expands the applicability of the equipment (e.g., different sized substrates, multiple process parameter combinations).

[0113] Specifically, the ion implantation adjustment device 20 includes a first moving stage 21 and a second moving stage 22 with independently adjustable speeds, respectively carrying the first substrate 31 and the second substrate 32 to be implanted. Its working principle is to compensate for differences in ion beam attenuation caused by different distances from the beam generating device by dynamically adjusting the moving speeds of the two stages. Specifically, the distance between the second moving stage and the beam generating device is greater than that of the first moving stage. According to a first formula, the moving speed of the second moving stage must be lower than that of the first moving stage to prolong the residence time of the second substrate in the ion beam region, thereby balancing the implantation dose of both. The device monitors the moving speeds of the two stages in real time through a speed sensor and feeds the data back to the control unit, forming a closed-loop control system. The control unit dynamically adjusts the output of the drive mechanism according to the real-time speed and implantation dose requirements to ensure that the two stages move at precisely matched speeds.

[0114] The device employs a speed compensation mechanism to effectively reduce the uneven implantation dose caused by stage position differences, thereby reducing the sheet resistance (RS) difference between the first and second substrates and improving the uniformity of product electrical performance. The closed-loop control system achieves high-precision control of the stage speed, reducing the impact of mechanical errors and process fluctuations and ensuring the stability of the implantation dose. The modular design of the device supports quick replacement of stage fixtures and is compatible with substrates of different sizes (such as glass and wafers), improving the equipment's versatility and production flexibility. Furthermore, through real-time monitoring and dynamic adjustment, the device can adapt to high vacuum environments and complex process requirements (such as multi-element implantation and flexible substrate processing), further enhancing process stability and production efficiency. In practical applications, the ion implantation adjustment device 20 improves product yield and reduces energy consumption and maintenance costs, providing an efficient and reliable solution for semiconductor and display panel manufacturing.

[0115] The results are verified through specific experimental examples as follows.

[0116] Example 1: Velocity compensation under high vacuum conditions:

[0117] The vacuum level of process chamber 6 is 0.0015 Pa, the moving speed of the first moving stage is V1 = 10 mm / s, and the distance difference is ΔD = 3 mm.

[0118] The control unit 5 calculates V2 = 10 × 97% = 9.7 mm / s according to the first formula V2 = V1(1 - ΔD / D1); the speed sensor monitors the moving speed of the second moving platform in real time and feeds it back to the control unit 5; if the deviation of the moving speed of the second moving platform exceeds ±0.05 mm / s, the control unit 5 automatically adjusts the current of the drive motor and calibrates the speed.

[0119] Through speed compensation, the difference in injection dose between the first substrate 31 on the first moving stage 21 and the second substrate 32 on the second moving stage 22 is reduced from 15% to less than 3%, and the sheet resistance (RS) distribution tends to be more uniform. Edge defects caused by uneven dose are reduced, and the product yield increases from 92% to 96%. In addition, the equipment does not require complex mechanical adjustments and can adapt to different substrate sizes and process requirements through dynamic speed compensation.

[0120] Example 2: Coordinated adjustment of multiple process parameters:

[0121] If the substrate material is changed to a flexible OLED substrate, the injection dose needs to be reduced.

[0122] Control unit 5 synchronously reduces the moving speed V1 of the first moving stage and the moving speed V2 of the second moving stage to 80% of their original speeds, while maintaining V2 = 97% of V1; the beam analysis device monitors the ion beam purity in real time and removes impurity ions; the vacuum level of the process chamber is maintained at 0.0018 Pa to ensure beam transmission efficiency. The uniformity of flexible substrate implantation is improved by 30%, and the yield is increased to 99.5%.

[0123] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description.

[0124] It should be noted that the above description describes some embodiments of this application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in a different order than that shown in the above embodiments and still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0125] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. An ion implantation device, characterized in that, include: A first movable stage is used to support a first substrate; The second movable stage is used to support the second substrate; A beam generating device for generating ion beams that are injected into the first substrate and the second substrate respectively along a first direction; The first movable platform and the second movable platform move at least along a second direction, which intersects with the first direction; The distance between the second movable stage and the beam generating device in the first direction is greater than the distance between the first movable stage and the beam generating device in the first direction; The relationship between the moving speed of the second moving platform and the moving speed of the first moving platform satisfies the first formula: V2 = V1(1 - ΔD / D1); Wherein, V1 is the moving speed of the first moving platform; V2 is the moving speed of the second moving platform; D1 is the distance between the first moving platform and the beam generating device in the first direction; ΔD = D2 - D1, and D2 is the distance between the second moving platform and the beam generating device in the first direction.

2. The ion implantation apparatus according to claim 1, characterized in that, The ion implantation device also includes: A first driving mechanism is connected to the first movable platform and is used to drive the first movable platform to move along the second direction; The second drive mechanism is connected to the second movable platform and is used to drive the second movable platform to move along the second direction; Preferably, the second direction is perpendicular to the first direction.

3. The ion implantation apparatus according to claim 2, characterized in that, The ion implantation device also includes: The control unit is electrically connected to at least the second drive mechanism and is used to adjust the moving speed of the second moving platform; Preferably, the control unit is electrically connected to the first drive mechanism and is used to adjust the moving speed of the first moving platform.

4. The ion implantation apparatus according to claim 3, characterized in that, The ion implantation device also includes: A speed sensor is used to monitor the real-time moving speed of the first moving platform and the second moving platform; the speed sensor is electrically connected to the control unit and is used to feed back the real-time moving speed to the control unit.

5. The ion implantation apparatus according to claim 1, characterized in that, The ion implantation device includes: A process chamber, wherein the first movable stage and the second movable stage are located within the process chamber; Preferably, the process chamber is a vacuum chamber; Preferably, the vacuum level of the process chamber is in the range of 0.001 Pa to 0.002 Pa.

6. The ion implantation apparatus according to claim 5, characterized in that, The ion implantation device includes: A beam analysis device is located between the beam generation device and the process chamber.

7. An ion implantation method, characterized in that, The method includes: The first substrate is placed on the first movable platform, and the second substrate is placed on the second movable platform; The first moving stage is controlled to move along the second direction, and the first substrate is implanted by the ion beam generated by the beam generating device along the first direction. The second moving stage is controlled to move along the second direction, and the second substrate is implanted with an ion beam generated by the beam generating device along the first direction; wherein the second direction intersects the first direction; the distance between the second moving stage and the beam generating device in the first direction is greater than the distance between the first moving stage and the beam generating device in the first direction. The relationship between the moving speed of the second moving platform and the moving speed of the first moving platform satisfies the first formula: V2 = V1(1 - ΔD / D1); Wherein, V1 is the moving speed of the first moving platform; V2 is the moving speed of the second moving platform; D1 is the distance between the first moving platform and the beam generating device in the first direction; ΔD = D2 - D1, and D2 is the distance between the second moving platform and the beam generating device in the first direction.

8. The ion implantation method according to claim 7, characterized in that, The control of the second moving platform to move along the second direction includes: Monitor the real-time moving speed of the second mobile platform and feed the real-time moving speed back to the control unit; Based on the real-time moving speed and the injection dose requirement of the second substrate, the control unit adjusts the moving speed of the second moving stage; Preferably, controlling the first moving platform to move along the second direction includes: Monitor the real-time moving speed of the first mobile platform and feed the real-time moving speed back to the control unit; Based on the real-time moving speed and the injection dose requirement of the first substrate, the control unit adjusts the moving speed of the first moving stage. Preferably, the second direction is perpendicular to the first direction; Preferably, the first substrate is perpendicular to the first direction, and the second substrate is perpendicular to the first direction.

9. An ion implantation adjustment device, characterized in that, include: The first movable stage is used to hold the first substrate to be implanted with ions; The second movable stage is used to hold the second substrate to be implanted with ions; The first moving platform and / or the second moving platform have an adjustable moving speed.

10. The ion implantation adjustment device according to claim 9, characterized in that, The ion implantation adjustment device further includes: A speed sensor is used to monitor the real-time moving speed of the first moving platform and the second moving platform; A control unit is electrically connected to the speed sensor; the speed sensor is used to feed back the real-time moving speed to the control unit, and the control unit adjusts the moving speed of the first moving stage and / or the second moving stage based on the real-time moving speed and the injection dose requirement.

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