An atomic-level precision cleaning and micro-nano machining integrated device

Abstract

This invention discloses an integrated device for atomic-level precision cleaning and micro / nano fabrication, comprising a vacuum chamber, and within it, a fast atomic beam generator, a multi-degree-of-freedom motion platform, a movable high-precision mask collaborative control mechanism, an in-situ online detection and closed-loop control system, and a process atmosphere control system. The fast atomic beam generator is equipped with a two-stage charge exchange structure for outputting an electrically neutral atomic beam; the multi-degree-of-freedom motion platform drives the workpiece in three-dimensional space; the movable high-precision mask collaborative control mechanism works in conjunction with the atomic beam and the motion platform; the probe of the in-situ online detection and closed-loop control system points towards the workpiece processing area; and the process atmosphere control system is connected to the interior of the chamber. This invention can reduce charge and thermal damage during processing, improve the sidewall processing quality of complex curved surfaces and high aspect ratio structures, while reducing cross-contamination and process gas consumption, and improving the consistency of batch processing quality.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor surface treatment and micro-nano etching technology, and particularly relates to an integrated device for atomic-level precision cleaning and micro-nano processing. Background Technology

[0002] With the development of high-end semiconductors, optoelectronic devices, and precision optical manufacturing, the requirements for atomic-level cleanliness, non-destructive processing, and precision in micro- and nano-structure forming of materials are increasing. Currently, in the surface treatment processes of these fields, core processes such as precision cleaning, etching, and polishing mainly employ radio frequency plasma treatment equipment and wet chemical treatment equipment.

[0003] However, existing technologies have several limitations in practical applications. When high-energy charged particle beams generated by radio frequency plasma equipment bombard the workpiece surface, they easily accumulate charge inside the workpiece, leading to device breakdown or leakage. Simultaneously, the accompanying high-temperature thermal effect can easily cause wafer warping and deformation of microstructures, reducing processing quality and device performance. Furthermore, existing single-unit processing equipment has relatively limited functionality; cleaning or etching processes usually need to be completed step-by-step between different machines. This not only increases equipment procurement and maintenance costs but also easily causes secondary surface contamination during workpiece transfer. Regarding processing adaptability, existing equipment has limited motion platform freedom and is usually used with fixed masks, resulting in blind spots in the processing of three-dimensional curved surfaces or high aspect ratio micro / nano structures, easily leading to distorted etching morphology. At the same time, existing processes lack real-time in-situ monitoring of etching depth and surface condition during operation, relying only on offline sampling inspection after processing. When processing parameters drift, timely closed-loop correction cannot be performed, making it difficult to guarantee the consistency of batch processing accuracy. Summary of the Invention

[0004] The purpose of this invention is to provide an integrated device for atomic-level precision cleaning and micro / nano fabrication, in order to solve the problems of traditional devices such as charge / thermal damage, limited functionality, inability to process complex curved surfaces, high gas consumption, and lack of real-time closed-loop precision control.

[0005] To solve the above-mentioned technical problems, the specific technical solution of the present invention is as follows: In some embodiments of this application, an integrated device for atomic-level precision cleaning and micro / nano fabrication is provided, including a device frame body, a vacuum cavity and a processing system disposed within the device frame body; the processing system includes: A fast atomic beam generator assembly is disposed within the vacuum chamber and is used to output a high-energy fast atomic beam to the workpiece; A multi-degree-of-freedom motion platform is set inside the vacuum cavity, located below the output end of the fast atomic beam generator assembly, and is used to carry and drive the workpiece to move in three-dimensional space; A movable high-precision mask collaborative control mechanism is set above the multi-degree-of-freedom material motion platform, including a mask and a precision displacement driving component. The movable high-precision mask collaborative control mechanism is linked and cooperates with the fast atomic beam generation component and the multi-degree-of-freedom material motion platform. An in-situ online detection and closed-loop control system includes an optical detection module and a control module, wherein the detection end of the optical detection module points to the processing area of ​​the workpiece; The process atmosphere control system is connected to the interior of the vacuum chamber; and The intelligent electronic control system and the water cooling and safety protection system are electrically connected to the processing system.

[0006] In some embodiments of this application, an intelligent controller and a gas flow controller are provided on the front side of the main body of the equipment frame, a sealing flange cover is provided on the side wall of the main body of the equipment frame, a glass observation window is provided on the sealing flange cover, and a support base is provided at the bottom of the main body of the equipment frame.

[0007] In some embodiments of this application, a high-vacuum molecular pump is provided at the bottom of the vacuum chamber, and the high-vacuum molecular pump is connected to the vacuum chamber through a circular air extraction port.

[0008] In some embodiments of this application, the fast atomic beam generating assembly includes an ion source, a charge exchange chamber, a collimation and shaping structure, and a fast atomic beam fixture arranged sequentially along the beam direction, wherein the high-energy fast atomic beam is directionally output to the workpiece surface via the fast atomic beam fixture.

[0009] In some embodiments of this application, the multi-degree-of-freedom loading motion platform includes a Z-axis drive motor, a transmission screw driven by the Z-axis drive motor, a rotating tilting frame connected to the upper end of the transmission screw, an electric angle displacement stage and an electric rotary table disposed below the rotating tilting frame; the rotating tilting frame is provided with a patterned clamping plate for fixing the workpiece.

[0010] In some embodiments of this application, the process atmosphere control system includes a gas flow controller disposed on the outside of the main body of the equipment frame and a mass flow controller disposed in the vacuum chamber; the mass flow controller is connected to an L-shaped vent through a sealed gas supply pipeline, and the outlet of the L-shaped vent faces the processing area of ​​the fast atomic beam.

[0011] In some embodiments of this application, the water cooling and safety protection system is connected to the vacuum chamber through a water cooling pipeline interface; the intelligent electronic control system is electrically connected to the processing system through a circuit interface.

[0012] In some embodiments of this application, the intelligent controller is connected to the control module of the gas flow controller, the intelligent electronic control system, and the in-situ online detection and closed-loop control system for centralized control and data storage.

[0013] Compared with existing technologies, the advantages of this invention are as follows: by employing a dual-stage charge exchange structure to neutralize the ion beam, and combined with a low-heat-load cooling system, material damage caused by charge accumulation and thermal effects during processing is effectively avoided; through the synchronous linkage between the multi-degree-of-freedom material motion platform and the movable high-precision mask, combined with the real-time feedback closed-loop control of the in-situ online detection module, the equipment can adapt to blind-zone-free processing of complex curved surfaces and high aspect ratio structures, improving the consistency of the etched layer thickness and ensuring the sidewall verticality of the micro-nano structure; at the same time, by integrating continuous atmosphere switching and beam synchronous modulation functions into a single unit, the risk of cross-contamination caused by multiple units being transferred is reduced, the utilization efficiency of process gases is improved, and the overall operating cost is reduced, thereby ensuring the stability and repeatability of batch processing quality. Attached Figure Description

[0014] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings: Figure 1 This is a schematic diagram of the overall three-dimensional structure of an integrated device for atomic-level precision cleaning and micro-nano processing according to the present invention.

[0015] The markings in the diagram are: 1—Sealed flange cover; 2—Glass observation window; 3—Main body of equipment frame; 4—Intelligent controller; 5—Gas flow controller; 6—Support base.

[0016] Figure 2 yes Figure 1 The diagram shows a cross-sectional view of the internal structure of the device.

[0017] The markings in the diagram are as follows: 7—High vacuum chamber; 8—High vacuum molecular pump; 9—Fast atomic beam fixture; 10—L-shaped vent; 11—Drive screw; 12—Z-axis drive motor; 13—Sealed gas supply line; 14—Fast atomic beam; 15—Patterned clamping plate; 16—Rotating tilting frame; 17—Electric angular displacement stage; 18—Electric rotary stage; 19—Mass flow controller; 20—Water cooling pipeline interface; 21—Circuit interface; 22—Circular vent.

[0018] Figure 3 This is a schematic diagram of the structure of the fast atomic beam generation component (atomic beam source) in this invention.

[0019] The diagram is labeled as follows: 1—Electromagnetic focusing lens group; 2—Accelerating electrode system; 3—Beam detection window.

[0020] Figure 4 This is a schematic diagram of the structure of the multi-degree-of-freedom load-carrying motion platform in this invention.

[0021] The following are labeled in the diagram: workpiece, Z-axis lifting mechanism, Y-axis tilting joint, and 360° rotating turntable.

[0022] Figure 5 This is a schematic diagram of the movable high-precision mask control mechanism in this invention.

[0023] Figure 6 This is a logic control block diagram of the in-situ online detection and closed-loop control system in this invention.

[0024] Figure 7 This is a graph showing the etching depth of calcium fluoride (CaF2) crystal under the action of argon fast atomic beam in Example 1 of the present invention.

[0025] Figure 8 This is a graph showing the etching depth of a gallium arsenide (GaAs) substrate under the action of a fast argon atomic beam in Embodiment 2 of the present invention. Detailed Implementation

[0026] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

[0027] To better understand the purpose, structure, and function of this invention, the invention will be described in further detail below with reference to the accompanying drawings.

[0028] like Figure 1 As shown, the present invention provides an integrated device for atomic-level precision cleaning and micro / nano fabrication, which has a modular vacuum integrated structure and includes an external device frame body 3. The front side panel of the device frame body 3 is equipped with an intelligent controller 4 for human-machine interaction and parameter setting, and a gas flow controller 5; the side wall of the device frame body 3 is equipped with a sealing flange cover 1, on which a glass observation window 2 is embedded, facilitating external observation of the internal processing by the operator; the bottom of the device frame body 3 is equipped with a support base 6 for supporting the entire device.

[0029] like Figure 2 As shown, the main body 3 of the equipment frame is equipped with a high-vacuum chamber 7, which provides a high-vacuum processing environment. A high-vacuum molecular pump 8 is installed at the bottom of the chamber, and the chamber is evacuated to the target vacuum level, such as 2×10⁻⁶, through a circular evacuation port 22. - 5Below Pa. The high vacuum chamber 7 is equipped with eight core subsystems, mainly including a fast atomic beam generation component, a multi-degree-of-freedom material motion platform, an in-situ online detection and closed-loop control system, a process atmosphere control system, a movable high-precision mask collaborative control mechanism, an intelligent electronic control system, and a water cooling and safety protection system.

[0030] like Figure 2 and Figure 3 As shown, the fast atomic beam generator assembly is located above the interior of the vacuum chamber 7. This assembly includes an ion source, a primary pre-neutralization chamber, and a secondary deep neutralization chamber arranged sequentially along the beam direction, forming a two-stage charge exchange structure, as well as a collimation and shaping structure. A fast atomic beam fixture 9 is provided at the output end, through which the high-energy neutralized fast atomic beam 14 is directionally output to the surface of the workpiece below. The collimation and shaping structure is composed of a multi-level micro-pore array and magnetic field confinement, which can stably control the beam divergence angle within 0.5°.

[0031] like Figure 2 and Figure 4 As shown, the multi-degree-of-freedom motion platform is positioned below the output end of the fast atomic beam generator assembly. The platform includes a Z-axis drive motor 12 and a transmission screw 11 driven by the Z-axis drive motor, which enables Z-axis lifting. Above the transmission screw is a rotating tilting frame 16, below which are sequentially connected an electric angle displacement stage 17 for Y-axis tilt adjustment and an electric rotary stage 18 for 360° rotation. A patterned clamping plate 15 is located at the top of the rotating tilting frame 16 to securely clamp the workpiece onto the platform. All motion mechanisms are controlled by a synchronous coupling control algorithm, enabling three-dimensional, dead-angle-free linkage.

[0032] The movable high-precision mask collaborative control mechanism is located above the multi-degree-of-freedom motion platform and includes an ultra-thin high-precision mask, a three-axis precision displacement platform, and a grating position feedback sensor. The mask is fixed to the three-axis precision displacement platform by a vacuum stress-free clamping mechanism. The mechanism is connected to the intelligent control system through circuit interface 21, enabling real-time synchronous linkage with the incident angle of the fast atomic beam 14 and the attitude of the multi-degree-of-freedom motion platform, with the synchronization error controlled within ±0.1μm.

[0033] like Figure 2 and Figure 6 As shown, the in-situ online detection and closed-loop control system includes a vacuum-compatible broadband light source, an optical detection module with a fiber optic probe, a fiber optic spectrometer, and a control module. The optical detection module is located beside the fast atomic beam fixture 9, with its probe pointing towards the machining area of ​​the workpiece. During detection, the broadband light source guides light into the cavity to irradiate the workpiece surface, and the reflected light is transmitted back to the spectrometer via fiber optic cable. The control module calculates the current etching depth based on thin-film interferometry and phase difference algorithms.

[0034] like Figure 1 and Figure 2 As shown, the process atmosphere control system consists of a gas flow controller 5 located on the external equipment panel of the cavity, a mass flow controller 19 located inside the vacuum cavity 7, and a sealed gas delivery pipeline 13. After the external gas source is regulated by the flow controller 5, it is introduced into the cavity through the sealed gas delivery pipeline 13. The flow rate is precisely controlled by the mass flow controller 19, and finally delivered to the processing area of ​​the fast atomic beam 14 through the L-shaped vent 10, realizing continuous atmosphere supply and beam synchronous modulation.

[0035] The vacuum chamber 7 has a water-cooling pipe interface 20 on its side wall, which is connected to external circulating cooling water for low-heat load temperature control of the chamber and workpiece. The intelligent electronic control system is connected to the motors, sensors and controllers inside the equipment through the circuit interface 21 to achieve centralized control and parameter storage.

[0036] Example 1: Integrated high-precision etching and cleaning of calcium fluoride crystals The object processed in this embodiment is a CaF2(111) crystal window with a diameter of φ20mm, which is used in deep ultraviolet optical systems.

[0037] Equipment preparation: Fix the crystal workpiece onto the rotating tilting frame 16 using the patterned clamping plate 15, and close the sealing flange cover 1; turn on the high vacuum molecular pump 8 to evacuate the vacuum chamber 7 to a vacuum level of 3×10⁻⁶. -4 Pa; Turn on the water cooling system to stabilize the workpiece temperature at 20±0.5℃.

[0038] Cleaning and Etching: The fast atomic beam generator is started, and high-purity argon (Ar) is used as the process gas. The two-stage charge exchange is controlled to ensure that the atomic beam neutralization rate is >99%. First, a low beam current is turned on to perform precision cleaning on the crystal surface to remove surface contaminants and oxide layers. Then, the etching mode is switched to, and the etching rate is set to 30 nm / min according to the pre-calibrated CaF2-specific etching rate spectrum.

[0039] Processing procedure: A multi-degree-of-freedom motion platform and an in-situ online detection and closed-loop control system are activated. The platform drives the workpiece in a coordinated manner, including Z-axis lifting, Y-axis tilting (±10°), and 360° rotation, while a dynamic mask is used for high-fidelity synchronous etching. The optical interferometry detection module provides real-time depth detection with a resolution ≤ 0.1nm and an accuracy ≤ ±1nm. The control module dynamically adjusts the beam intensity and processing time.

[0040] Result: The system automatically shut down when the etching depth reached the target value of 550 nm. Testing showed... Figure 7As shown, the actual etching depth is 550.0±5 nm, the surface roughness Ra is as low as 0.8 nm, there is no charge accumulation damage and thermal deformation, and the batch yield reaches 99.6%.

[0041] Example 2: Etching and fabrication of micro / nano structures for GaAs-based optoelectronic devices The processing object in this embodiment is a GaAs(100) substrate with a micro-nano optical waveguide structure that is used in optical communication chips.

[0042] Equipment preparation: Place the GaAs substrate on a multi-degree-of-freedom platform and evacuate to a cavity vacuum level of 8×10⁻⁶. - 5 Pa.

[0043] Etching process: Ar gas was selected as the process gas, and the two-stage charge exchange achieved a neutralization rate of 99.5% for the atomic beam. The etching rate was set to 10 nm / min based on the preset spectrum.

[0044] Processing procedure: The dynamic mask system, fast atomic beam 14 and multi-degree-of-freedom motion platform are synchronized and linked, and the synchronization error is controlled within 0.5μm; the depth is controlled by the in-situ detection system and automatically terminated when the etching depth reaches the target value of 150nm.

[0045] Result: As detected... Figure 8 As shown, the actual etching depth is 150.0±1.1 nm, the sidewall steepness is >85°, there is no sidewall taper or distortion, the device has no breakdown leakage, and the batch processing yield reaches 99.5%.

[0046] As a comparative example, an existing conventional radio frequency plasma etching and cleaning machine was used to etch the same CaF2 crystal workpiece as in Example 1 and the same GaAs substrate as in Example 2. This comparative example equipment lacks a fast atomic beam charge neutralization module, a multi-degree-of-freedom motion platform, an in-situ online detection unit, and a movable dynamic mask mechanism.

[0047] The comparative cleaning and etching processes had to be completed step-by-step on two separate machines, and the process relied solely on preset parameters without real-time feedback. Ultimately, both the CaF2 and GaAs substrates exhibited significant charge accumulation damage and thermal stress deformation, with large fluctuations in etching depth, and sidewall tilting and undercutting. The yield was far lower than in Examples 1 and 2, validating the significant technical advantages of the equipment of this invention.

[0048] It should be noted that argon gas was used in the above embodiments, but when etching different materials, those skilled in the art can replace the process gas with oxygen O2, carbon tetrafluoride CF4 or sulfur hexafluoride SF6, etc., to construct different reactive fast atomic beam processing systems, all of which fall within the scope of protection of this invention.

[0049] It should be noted that the above-mentioned in-situ online detection uses optical interferometry, which can also be equivalently replaced by a reflectance ellipsometer or a reflectometer, which can also achieve non-contact, vacuum-compatible, high-precision real-time measurement.

[0050] It should be noted that, in addition to processing optical crystals and semiconductor substrates, this equipment can also be applied to processing scenarios such as microfluidic chip channels, micro-nano modification of special optical fiber end faces, and polishing of curved surfaces of optical lenses.

[0051] In the description of this application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0052] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0053] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0054] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to the method section.

[0055] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An integrated device for atomic-level precision cleaning and micro / nano fabrication, characterized in that, It includes a main equipment frame, a vacuum chamber and a processing system disposed within the main equipment frame; the processing system includes: A fast atomic beam generator assembly is disposed within the vacuum chamber and is used to output a high-energy fast atomic beam to the workpiece; A multi-degree-of-freedom motion platform is set inside the vacuum cavity, located below the output end of the fast atomic beam generator assembly, and is used to carry and drive the workpiece to move in three-dimensional space; A movable high-precision mask collaborative control mechanism is set above the multi-degree-of-freedom material motion platform, including a mask and a precision displacement driving component. The movable high-precision mask collaborative control mechanism is linked and cooperates with the fast atomic beam generation component and the multi-degree-of-freedom material motion platform. An in-situ online detection and closed-loop control system includes an optical detection module and a control module, wherein the detection end of the optical detection module points to the processing area of ​​the workpiece; The process atmosphere control system is connected to the interior of the vacuum chamber; and The intelligent electronic control system and the water cooling and safety protection system are electrically connected to the processing system.

2. The integrated equipment for atomic-level precision cleaning and micro / nano fabrication according to claim 1, characterized in that, The front side of the main body of the equipment frame is equipped with an intelligent controller and a gas flow controller. The side wall of the main body of the equipment frame is provided with a sealing flange cover, and the sealing flange cover is provided with a glass observation window. The bottom of the main body of the equipment frame is provided with a support base.

3. The integrated equipment for atomic-level precision cleaning and micro / nano fabrication according to claim 1, characterized in that, A high-vacuum molecular pump is provided at the bottom of the vacuum chamber, and the high-vacuum molecular pump is connected to the vacuum chamber through a circular air extraction port.

4. The integrated equipment for atomic-level precision cleaning and micro / nano fabrication according to claim 1, characterized in that, The fast atomic beam generating assembly includes an ion source, a charge exchange chamber, a collimation and shaping structure, and a fast atomic beam fixture arranged sequentially along the beam direction. The high-energy fast atomic beam is directionally output to the workpiece surface via the fast atomic beam fixture.

5. The integrated equipment for atomic-level precision cleaning and micro / nano fabrication according to claim 1, characterized in that, The multi-degree-of-freedom loading motion platform includes a Z-axis drive motor, a transmission screw driven by the Z-axis drive motor, a rotating tilting frame connected to the upper end of the transmission screw, an electric angle displacement stage and an electric rotary table disposed below the rotating tilting frame; the rotating tilting frame is provided with a patterned clamping plate for fixing the workpiece.

6. The integrated equipment for atomic-level precision cleaning and micro / nano fabrication according to claim 1, characterized in that, The process atmosphere control system includes a gas flow controller disposed on the outside of the main frame of the equipment and a mass flow controller disposed in the vacuum chamber; the mass flow controller is connected to an L-shaped vent through a sealed gas supply pipeline, and the outlet of the L-shaped vent faces the processing area of ​​the fast atomic beam.

7. The integrated equipment for atomic-level precision cleaning and micro / nano fabrication according to claim 1, characterized in that, The water cooling and safety protection system is connected to the vacuum chamber through a water cooling pipeline interface; the intelligent electronic control system is electrically connected to the processing system through a circuit interface.

8. The integrated equipment for atomic-level precision cleaning and micro / nano fabrication according to claim 2, characterized in that, The intelligent controller is connected to the control modules of the gas flow controller, the intelligent electronic control system, and the in-situ online detection and closed-loop control system for centralized control and data storage.

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