Self-packaged high flatness wideband wilkinson power divider

Abstract

The application provides a self-packaging high-flatness wide-band Wilkinson power divider, comprising a shell made of conductive material, a Wilkinson power divider unit, an N-stage coupling line unit and an open-circuit coupling line stub pad; the N-stage coupling line unit is connected in sequence, and the end of the Wilkinson power divider unit is connected with the head of the first-stage coupling line unit; the end of the Wilkinson power divider unit is provided with an input port, and two coupling line units in the N-stage coupling line unit are respectively provided with output ports; the open-circuit coupling line stub pad is loaded on each stage of the N-stage coupling unit through a three-dimensional microstructure electrochemical manufacturing process, and is used for mounting a resistance element; the open-circuit coupling line stub pad is a boss structure protruding on the upper surface of the N-stage coupling line unit. The application solves the problems of high-frequency transmission loss and low packaging integration of the existing power divider.

Description

Technical Field

[0001] This invention relates to the field of power divider technology, and more particularly to a self-encapsulated, high-flatness, wideband Wilkinson power divider. Background Technology

[0002] In radio frequency and microwave systems, power dividers are core passive devices for power distribution and combining, and are widely used in phased array feed networks, 5G / 6G base stations, and multi-channel transceiver components.

[0003] However, traditional power dividers mostly employ microstrip or waveguide structures, and the size of their branch lines or quarter-wavelength conversion sections is frequency-dependent. In low-frequency or broadband designs, they occupy a large area, which is not conducive to high-density integration. As systems evolve towards millimeter-wave bands, higher integration, and higher reliability, existing power dividers still face the problem of significantly deteriorating insertion loss at high frequencies.

[0004] In summary, existing power dividers suffer from high transmission loss in the high-frequency band and low packaging integration. Summary of the Invention

[0005] This invention provides a self-packaged, high-flatness broadband Wilkinson power divider to solve the problems of high transmission loss and low packaging integration in existing power dividers at high frequencies.

[0006] A self-encapsulated high-flatness broadband Wilkinson power divider includes: a housing made of conductive material, an N-order coupled-line Wilkinson power divider, and open-circuit coupled-line stub pads. The N-order coupled-line Wilkinson power divider is located at the center of the inner cavity of the housing, and includes a Wilkinson power divider unit and an N-order coupled-line unit. The N-order coupling line units are cascaded in sequence, and the end of the Wilkinson power divider unit is connected to the beginning of the first-order coupling line unit. The Wilkinson power divider unit is provided with an input port at its end, and the two coupling line units in the N-order coupling line unit are respectively provided with output ports. The open-circuit coupling line stub pads are respectively loaded onto each of the Nth-order coupling units using a three-dimensional microstructure electrochemical manufacturing process, for mounting resistive elements. The open-circuit coupling line stub pad is a boss structure protruding from the upper surface of the N-order coupling line unit.

[0007] Furthermore, in the self-encapsulated high-flatness broadband Wilkinson power divider described above, the height of the open-circuit coupling line stub pad is determined using the following formula:

[0008] Where f is the resonant zero frequency, For the center frequency, This represents the height of the solder pad.

[0009] Furthermore, as described above, the self-encapsulated high flatness broadband Wilkinson power divider has octagonal through holes on the Wilkinson power divider unit and the Nth-order coupling line unit, respectively.

[0010] Furthermore, in the self-encapsulated high-flatness broadband Wilkinson power divider described above, the impedance and coupling coefficient of the Nth-order coupled line unit decrease sequentially.

[0011] Furthermore, the self-encapsulated high flatness broadband Wilkinson power divider described above also includes a top cover for protecting the resistive element; a plurality of pins are provided on the top cover, and a plurality of mounting holes are provided at corresponding positions on the housing; the top cover is positioned by the pins engaging with the mounting holes and interconnected by welding.

[0012] Furthermore, the self-encapsulated high flatness broadband Wilkinson power divider described above also includes a number of first dielectric support strips and a number of second dielectric support strips; The plurality of first dielectric support strips are distributed at a set interval within the N-order coupled-line Wilkinson power divider. Each first dielectric support strip penetrates the plane of the N-order coupled-line Wilkinson power divider, and its two ends are respectively fixedly connected to the inner wall of the housing. The plurality of second dielectric support strips are evenly arranged at a set interval on the upper surface of the N-order coupled-line Wilkinson power divider and are fixedly connected to the N-order coupled-line Wilkinson power divider. The two ends of each second dielectric support strip are respectively fixedly connected to the inner wall of the housing.

[0013] Furthermore, in the self-encapsulated high flatness broadband Wilkinson power divider described above, the N-order coupled-line Wilkinson power divider is symmetrically arranged within the housing, and its axis coincides with the axis of the housing.

[0014] Furthermore, as described above, the self-encapsulated high flatness broadband Wilkinson power divider is fabricated using a three-dimensional microstructure electrochemical manufacturing process, and the housing is provided with a plurality of release holes for releasing photoresist, the diameter of which is 200 μm.

[0015] Furthermore, the self-encapsulated high flatness broadband Wilkinson power divider described above comprises 10 process layers, each of which is manufactured using three-dimensional microstructure electrochemical fabrication, and each process layer has a thickness of 100 μm.

[0016] Furthermore, in the self-encapsulated high-flatness broadband Wilkinson power divider described above, the conductor portion of the N-order coupled-line Wilkinson power divider is made of copper.

[0017] Beneficial effects: The self-encapsulated high-flatness broadband Wilkinson power divider provided by this invention employs an N-order coupling line architecture with cascaded Wilkinson power divider outputs to reduce the broadband power divider's dependence on strong coupling coefficients. In this architecture, open-circuit coupling line stub pads are loaded on each order of the N-order coupling lines, achieving the following dual functions: First, by relying on the three-dimensional microstructure electrochemical manufacturing process, a reserved installation position is made for the isolation resistor element, which facilitates compact layout; Second, its own open-circuit short stub introduces capacitive load, effectively improving passband flatness, thereby significantly alleviating the problem of device performance degradation in the high-frequency band.

[0018] The above structure, combined with a compact layout design, can effectively reduce the size of devices, improve the integration of RF and microwave systems, and adapt to high-frequency and small-space application scenarios.

[0019] Regarding the packaging integration method, this invention utilizes a three-dimensional microstructure electrochemical manufacturing process to process the resistor package top cover. The top cover features a pin structure, and the corresponding portion of the housing has mounting holes. The pins engage with the mounting holes for positioning, and the components are interconnected via welding. This process protects the resistor element while achieving integrated packaging with the main device. This process boasts micron-level processing precision, avoiding assembly errors and parasitic effects introduced by traditional discrete packaging, making it suitable for integrated production and mass manufacturing.

[0020] The broadband Wilkinson power divider of this invention can be manufactured using a three-dimensional microstructure electrochemical manufacturing process. This invention achieves broadband, miniaturization, and high flatness in the power divider while simultaneously obtaining a compact, mechanically reliable, and process-scalable overall characteristic through a structure-electrical integration design of open-circuit coupling line stub pads and a top cover soldering and packaging integration method. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1 A schematic diagram of the three-dimensional structure of a self-encapsulated high flatness broadband Wilkinson power divider provided in the embodiments of this application; Figure 2 Top view of a self-encapsulated high-flatness broadband Wilkinson power divider provided in an embodiment of this application; Figure 3 Top view of the internal structure of the self-encapsulated high flatness broadband Wilkinson power divider provided in the embodiments of this application; Figure 4 A bottom view of the internal structure of a self-encapsulated high-flatness broadband Wilkinson power divider provided in an embodiment of this application. Figure 5 A side view of the internal structure of a self-encapsulated high-flatness broadband Wilkinson power divider provided in an embodiment of this application; Figure 6 A perspective view of a self-encapsulated high-flatness broadband Wilkinson power divider provided in an embodiment of this application; Figure 7 Top view of a broadband Wilkinson power divider without a top cover provided in an embodiment of this application; Figure 8 This is a schematic diagram of the top cover structure provided in an embodiment of this application; Figure 9 A schematic diagram of the circuit principle of the broadband Wilkinson power divider provided in the embodiments of this application; Figure 10 An exploded view of a self-encapsulated high-flatness broadband Wilkinson power divider provided in an embodiment of this application; Figure 11 for Figure 10 Schematic diagram of each layer; Figure 12 A flowchart illustrating the fabrication process of a self-encapsulated high-flatness broadband Wilkinson power divider provided in this application embodiment; Figure 13 A schematic diagram of the assembly process of the self-encapsulated high flatness broadband Wilkinson power divider provided in the embodiments of this application; Figure 14 A schematic diagram of the S-parameter simulation results of the self-encapsulated high flatness broadband Wilkinson power divider provided in the embodiments of this application; Figure 15 This is a schematic diagram illustrating the isolation of a self-encapsulated high-flatness broadband Wilkinson power divider provided in an embodiment of this application. Figure 16 A schematic diagram illustrating the amplitude and phase imbalance of a self-encapsulated high-flatness broadband Wilkinson power divider provided in an embodiment of this application. Figure label: 1. Second-order coupled Wilkinson power divider; 2. Housing; 3. First dielectric support bar; 4. Second dielectric support bar; 5. Wilkinson power divider; 6. Second-order coupled line; 7. Input port; 8. Output port; 9. Open-circuit coupled stub pad; 10. Release hole; 11. Pin; 12. Octagonal through hole; 13. First-order coupled line; 14. Second-order coupled line; 15. Micro coaxial cable; 16. Top cover; 17. Window; 18. Port opening; 19. Mounting hole; 20. Resistor. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0024] As RF and microwave systems evolve towards millimeter-wave bands, higher integration, and higher reliability, existing power dividers face a series of challenges: most designs employ planar circuits and discrete packaging, introducing parasitic effects and impedance discontinuities, leading to performance degradation, with insertion loss significantly worsening at high frequencies; limited heat dissipation capacity of the package affects power capacity and thermal stability; under temperature cycling and mechanical stress, the isolation resistor and microstrip line interface are prone to cracking due to thermal expansion mismatch, causing performance drift; at the same time, existing processes struggle to achieve low-loss transitions and integrated self-packaging, limiting their further application in compact, high-performance RF modules.

[0025] To address the issues of high high-frequency transmission loss and low packaging integration in existing technologies, this example implementation provides a self-packaged, high-flatness broadband Wilkinson power divider. This solution improves passband flatness by loading open-circuit coupling line stub pads on each of the N-order coupling lines. These pads serve as both reserved mounting locations for isolation resistors and open-circuit short stubs to introduce capacitive loads. Simultaneously, a resistor package top cover with a pin structure is positioned and welded together with the housing mounting holes, achieving integrated packaging of the resistor components. Therefore, while maintaining excellent electrical performance such as broadband, miniaturization, and high flatness, this solution achieves a compact structure, mechanical reliability, and scalable manufacturing process, meeting the stringent requirements of future millimeter-wave systems for high integration and high stability.

[0026] The self-packaged high-flatness broadband Wilkinson power divider provided in this application includes: designing an N-order coupled-line Wilkinson power divider main circuit; setting open-circuit coupled-line stub pads on each order of the N-order coupled-line, the open-circuit coupled-line stub pads serving as reserved mounting positions for resistor elements and open-circuit short stubs for introducing capacitive loads to improve in-band flatness; providing a resistor top cover, on which resistor elements are integrated; interconnecting the resistor top cover and the main circuit by soldering, so that the resistor elements are mounted at the open-circuit coupled-line stub pad positions, and realizing the packaged integration of the main circuit.

[0027] Below, with N=2, the self-encapsulated high flatness broadband Wilkinson power divider provided by the present invention will be described in more detail with reference to the accompanying drawings and embodiments.

[0028] Please see Figures 1-8 The self-encapsulated high-flatness broadband Wilkinson power divider provided in this application includes: a housing 2, a second-order coupled-line Wilkinson power divider 1, and open-circuit coupled-line stub pads 9. The second-order coupled-line Wilkinson power divider 1 is located in the center of the inner cavity of the housing 1, and includes a Wilkinson power divider 5 and a second-order coupled line 6; the second-order coupled lines 6 are cascaded sequentially, and the end of the Wilkinson power divider 5 is connected to the beginning of the first-order coupled line 13; the end of the Wilkinson power divider 5 is provided with an input port 7, and each end of the second-order coupled line 6 is provided with an output port 8; the open-circuit coupled-line stub pads 9 are respectively loaded onto each step of the second-order coupled line 6 through a three-dimensional microstructure electrochemical manufacturing process for mounting resistive elements; the open-circuit coupled-line stub pads 9 are boss structures protruding from the upper surface of the second-order coupled line 6.

[0029] In this embodiment, the housing 2 and the conductor portion of the second-order coupled Wilkinson power divider circuit 1 are both made of copper. This results in no radiation loss during radio frequency signal transmission, exhibiting low loss, high isolation, and low dispersion, thereby improving signal transmission quality and efficiency. Simultaneously, copper's excellent thermal conductivity and ductility allow for timely dissipation of heat generated during signal transmission, preventing performance degradation due to excessive temperature and extending device lifespan.

[0030] Furthermore, a micro coaxial cable 15 is provided on the input port 7 and the output port 8 respectively. The micro coaxial cable 15 is a 50-ohm micro coaxial cable.

[0031] Specifically, a gap for filling medium is formed between the housing 2 and the second-order coupled Wilkinson power divider 1. The filling medium is preferably air, which has stable dielectric properties and can effectively reduce transmission loss.

[0032] The open-circuit coupling line stub pad is formed through a multi-layer process, giving it the structural function of supporting resistive elements and the electrical impedance characteristics of an open-circuit stub. Each coupling line has an open-circuit coupling line stub pad 9. This open-circuit coupling line stub pad 9 has a dual function: firstly, it serves as a reserved mounting position for isolation resistor elements, facilitating a compact layout through three-dimensional microstructure electrochemical manufacturing processes; secondly, it itself acts as an open-circuit stub, introducing a capacitive load to improve passband flatness, thereby significantly mitigating the performance degradation problem of the device at high frequencies.

[0033] The broadband Wilkinson power divider provided in this embodiment uses multiple parallel coupled transmission lines cascaded with the Wilkinson power divider 5, relying on spatial electromagnetic mutual coupling to extend the bandwidth of the power divider. Specifically, the first-order coupling line 13 and the second-order coupling line 14 are two cascaded coupling lines.

[0034] Furthermore, the impedance and coupling coefficient of the second-order coupling line 6 provided in this embodiment decrease sequentially to achieve impedance matching and expand the bandwidth.

[0035] Specifically, the impedance and coupling coefficient of the first-order coupling line 13 are both greater than those of the second-order coupling line 14. The first-order coupling line 13 and the second-order coupling line 14 can be configured by controlling the transmission line width and spacing. The second-order coupled Wilkinson power divider 1 can have its structural parameters set according to actual performance requirements. For example, when the calibrated operating frequency band is 20.35-55.25 GHz, the return loss and isolation at each port are 15 dB, the amplitude imbalance is better than ±0.1 dB, and the phase imbalance is better than 1°, then the corresponding calibrated impedance of the first-order coupling line 13 is 78 Ω and the coupling coefficient is 0.38, and the impedance of the second-order coupling line 14 is 40 Ω and the coupling coefficient is 0.35.

[0036] When working, refer to Figure 3 , Figure 7 As shown, the input RF signal is input through port P1. Most of the signal is transmitted via the Wilkinson power divider 5 to the cascaded second-order coupling line 6, and finally to the output dual ports P2 and P3. The signal reflected back from output ports P2 or P3 is transmitted to Wilkinson power divider 5 via the second-order coupling line 6 of the second-order coupling line Wilkinson power divider circuit 1. Due to the isolation resistor, the signal transmitted back to the other output port P3 or P2 via the second-order coupling line 6 is significantly reduced (e.g., 15 dB), thus achieving mutual isolation between the output ports. Please refer to [reference needed]. Figure 7Input port P1 is used to input a sinusoidal signal. The power divider distributes the input path signal equally to two output ports, P2 and P3, according to power. When P2 or P3 is used as the input signal port, output port P3 or P2 correspondingly serves as the isolation port for the inverted signal. Ports P2 and P3 can be connected to matched load circuits; port P1 can be fed into an antenna or distributed system. The signals output from output ports P2 and P3 have the same form as the input signal, but due to power distribution and actual transmission loss (e.g., 0.6dB transmission loss), the amplitude of the signals output from ports P2 and P3 is smaller than the amplitude of the input signal at P1.

[0037] Please see Figure 9 The self-packaged high-flatness broadband Wilkinson power divider provided in this application embodiment achieves broadband performance through a cascaded second-order coupling line 6 of the Wilkinson power divider 5, where k1, k2, and k3 represent the coupling degree of each coupling line segment. Since the actual resistance contains parasitic inductance, this inductance exacerbates the performance degradation as the frequency increases. This device incorporates an open-circuit coupled short stub pad 9 in the circuit, introducing a capacitive load to counteract the parasitic inductance generated by the actual resistance, optimizing the device's high-frequency performance and effectively improving passband flatness.

[0038] The self-encapsulated high-flatness broadband Wilkinson power divider provided in this application embodiment can achieve three-dimensional integration and self-encapsulation structure while taking into account the excellent electrical performance such as broadband, miniaturization and high flatness. It has comprehensive characteristics of compact structure, good heat dissipation, mechanical reliability and process scalability, thereby overcoming the shortcomings of the prior art.

[0039] Furthermore, in this embodiment of the application, octagonal through holes 12 are respectively provided on the Wilkinson power divider 5 and the second-order coupling line 6, and the octagonal through holes 12 are provided on the second-order coupling line 14.

[0040] Specifically, the second-order coupled-line Wilkinson power divider circuit uses a cascaded structure to increase bandwidth and punches vias (octagonal through holes) to improve impedance matching.

[0041] Furthermore, the self-encapsulated high flatness broadband Wilkinson power divider provided in this application also includes a top cover 16 for protecting the resistive element; a plurality of pins 11 are provided on the top cover 16, and a plurality of recessed mounting holes 19 are provided at corresponding positions on the housing 2; the top cover 16 is positioned by the pins 11 and the mounting holes 19 and interconnected by welding.

[0042] Specifically, resistors are soldered to the open-circuit coupling line stub pads to form an electrical connection between the resistors and the main circuit. Additionally, the top cover and the main circuit are interconnected by soldering, including: positioning the pin structure on the top cover with the mounting hole 19 on the main circuit housing, and then soldering at the mating point, simultaneously achieving mechanical encapsulation and electrical connection. After soldering the resistors, the top cover 16 is mounted to the housing 2 via the engagement of the pin 11 with the mounting hole 19. This structure provides physical protection for the internal resistors and enhances the overall mechanical stability; furthermore, it achieves precise positioning and assemblability between the top cover and the housing, facilitating the integrated packaging of the device using the processing advantages of three-dimensional microstructure electrochemical manufacturing technology, thus avoiding performance inconsistencies caused by assembly errors in traditional discrete packaging.

[0043] The self-encapsulated high-flatness broadband Wilkinson power divider provided in this application further includes a plurality of first dielectric support strips 3 and a plurality of second dielectric support strips 4; the plurality of first dielectric support strips 3 are distributed at a set interval within the second-order coupled-line Wilkinson power divider 1, each first dielectric support strip 3 penetrates the plane where the second-order coupled-line Wilkinson power divider 1 is located, and its two ends are respectively fixedly connected to the inner wall of the housing 2; the plurality of second dielectric support strips 4 are evenly arranged at a set interval on the upper surface of the second-order coupled-line Wilkinson power divider 1, and are fixedly connected to the second-order coupled-line Wilkinson power divider 1, and the two ends of each second dielectric support strip 4 are respectively fixedly connected to the inner wall of the housing 2.

[0044] Specifically, to ensure the consistency and stability of the electrical performance of the devices, and to further secure the circuit, this application provides dielectric support strips between the second-order coupled-line Wilkinson power divider and the housing. Multiple dielectric support strips are evenly arranged along a preset direction at a predetermined spacing. A first-layer dielectric support strip 3 penetrates the second-order coupled-line Wilkinson power divider circuit 1, and both ends of each first-layer dielectric support strip abut against two corresponding inner walls of the housing 2, thereby preventing processing deformation and enhancing structural stability. Multiple second-layer dielectric support strips are evenly arranged above the second-order coupled-line Wilkinson power divider circuit 1 along a preset direction at a predetermined spacing, and both ends of each second-layer dielectric support strip abut against two corresponding inner walls of the housing 2, also serving a supporting and stabilizing function. Both the first-layer and second-layer dielectric support strips are made of insulating material.

[0045] Furthermore, in the self-encapsulated high flatness broadband Wilkinson power divider provided in this application embodiment, the second-order coupled-line Wilkinson power divider 1 is symmetrically arranged in the housing 2, and its axis coincides with the axis of the housing 2.

[0046] Furthermore, the self-encapsulated high-flatness broadband Wilkinson power divider provided in this embodiment is fabricated using a three-dimensional microstructure electrochemical manufacturing process, and the housing is provided with a plurality of release holes 10 for releasing photoresist, the diameter of the release holes 10 being 200 μm. In addition, the self-encapsulated high-flatness broadband Wilkinson power divider includes 10 process layers, each of which is fabricated using a three-dimensional microstructure electrochemical process, and each process layer is 100 μm thick.

[0047] Specifically, please refer to Figure 13 The packaging schematic diagram shows the self-packaged high-flatness broadband Wilkinson power divider provided by this invention. Its packaging integration process is as follows: First, resistors are soldered to the corresponding positions of the open-circuit coupling line stub pads 9 on the main circuit (i.e., the second-order coupled-line Wilkinson power divider circuit 1). The open-circuit coupling line stub pads 9 serve as both reserved mounting positions for resistors and introduce capacitive loads as open-circuit short stubs to improve high-frequency losses. After resistor soldering, the top cover 16 is positioned by engaging the corresponding recessed mounting holes 19 on the housing 2 with its symmetrically arranged protruding pins 11. Then, the top cover 16 and the housing 2 are interconnected by soldering, achieving physical protection of the internal resistors and integrated packaging of the overall structure. This packaging integration method avoids assembly errors and parasitic effects in traditional discrete packaging, while utilizing the micron-level precision of three-dimensional microstructure electrochemical manufacturing processes to ensure compact structure and mechanical reliability.

[0048] In addition, the open-circuit coupling line stub pad is a three-dimensional microstructure electrochemically processed structure, and its multi-layered structure enables it to simultaneously possess structural support function and electrical open-circuit stub function.

[0049] Please see Figure 7 , Figure 10-11 A window 17 is provided on the housing 2 in the area corresponding to the open-circuit coupling line stub pad 9 to form a reserved mounting position for the resistor element; release holes 10 for releasing photoresist are provided on the upper surface and side surface of the housing 2. The size and number of release holes 10 can be set according to the actual process requirements to ensure that the photoresist can be fully released during the manufacturing process without generating electromagnetic leakage.

[0050] Exemplarily, in an embodiment of this application, the self-encapsulated high-flatness broadband Wilkinson power divider includes 10 process layers based on a three-dimensional microstructure electrochemical manufacturing process, each process layer having a thickness of 100 μm. The main circuit structure and the top cover are both fabricated using a three-dimensional microstructure electrochemical manufacturing process. For example, the thickness of this structure can be 1000 μm (which can be considered a quasi-planar structure), the width can be 3470 μm, and the length can be 8530 μm. The number of process layers in the three-dimensional microstructure electrochemical manufacturing process involved in this embodiment of the invention can be 10 layers, each with a thickness of 100 μm. The fabrication process is as follows... Figure 12 As shown, firstly, a certain thickness of photoresist is deposited on the substrate and then photolithography is performed to etch the shape of the bottom layer metal, such as... Figure 12 The first photolithography layer is shown in the diagram. Next, metal is deposited in the etched area, as shown in the first electroplating layer. This process is repeated to increase the number of layers. After processing to the fifth layer, dielectric material is added to create dielectric support strips, and then photolithography and metal plating are performed on top of this. After forming the complete microcoaxial structure, the sacrificial photoresist is removed to obtain the desired device.

[0051] Furthermore, the height of the open-circuit coupling line stub pad in this application is determined using the following formula:

[0052] Where f is the resonant zero frequency, For the center frequency, This represents the height of the solder pad.

[0053] Specifically, the open-circuit coupling stub pad 9 in this embodiment includes four process layers based on a three-dimensional microstructure electrochemical manufacturing process, each process layer having a thickness of 100 μm. The electrical length of this pad determines the location of the introduced resonant zero. By introducing this zero in the high-frequency band, the transmission loss in the high-frequency band can be effectively compensated, thereby significantly improving the high-frequency performance of the device. The electrical length of the open-circuit coupling stub pad 9 determines the location of the resonant zero, which can be determined by the following formula:

[0054] Where f is the frequency of the resonant zero point. is the center frequency, and l is the electrical length of the open-circuit coupling stub.

[0055] This application controls the frequency position of the transmission zero point by adjusting the size, number of layers, or position of the open-circuit coupling line stub pads, thereby specifically improving the flatness within the frequency band.

[0056] In this embodiment, by using an open-circuit coupling line stub pad on a self-packaged high-flatness broadband Wilkinson power divider, the pad has a dual function: firstly, it serves as a reserved mounting location for isolation resistor elements, facilitating a compact layout through three-dimensional microstructure electrochemical manufacturing processes; secondly, it itself acts as an open-circuit short stub, introducing a resonant zero in the high-frequency band, thereby effectively improving the flatness within the passband. Simultaneously, this invention utilizes a three-dimensional microstructure electrochemical manufacturing process to fabricate the resistor package top cover, which features a pin structure. Correspondingly, the housing has grooves. The pins and grooves are positioned and interconnected via welding, protecting the resistor element while achieving integrated packaging with the main device. This facilitates integration and avoids the assembly errors and parasitic effects introduced by traditional discrete packaging.

[0057] For example, the characteristics of the self-encapsulated high-flatness broadband Wilkinson power divider of the present invention were simulated, and the port return loss and isolation of the broadband Wilkinson power divider were calibrated to be 15 dB. Figure 14-16 As shown, S11 represents the return loss of the input port P1 of the broadband Wilkinson power divider; S21 and S31 represent the power ratios transmitted from the input port P1 to the output ports P2 and P3; and S32 represents the power ratio transmitted from the output port P2 to the output port P3, i.e., the isolation of the broadband Wilkinson power divider. This broadband Wilkinson power divider exhibits return losses better than 15 dB, insertion losses better than 3.41 dB, isolation better than 15 dB, amplitude imbalance better than ±0.1 dB, and phase imbalance better than 1° at all ports within the 20.35-55.25 GHz frequency band.

[0058] The self-packaged high-flatness broadband Wilkinson power divider and method provided in this invention adopts an architecture of cascaded N-order coupling lines at the output of the Wilkinson power divider, significantly reducing the broadband power divider's dependence on strong coupling coefficients. An open-circuit coupling line stub pad is added to this architecture. This pad has a dual function: firstly, it serves as a reserved mounting location for isolation resistor elements, facilitating compact layout through three-dimensional microstructure electrochemical manufacturing processes; secondly, it itself acts as an open-circuit short stub, introducing capacitive loads and effectively improving transmission losses in the high-frequency band, thereby significantly mitigating the problem of device loss degradation in the high-frequency band and making it more suitable for high-frequency, space-constrained applications. Simultaneously, this invention utilizes a three-dimensional microstructure electrochemical manufacturing process to process the resistor package top cover. The top cover is equipped with a pin structure, and the corresponding portion of the housing has a groove. The pins and grooves are positioned and interconnected by welding, protecting the resistor element while achieving integrated packaging with the main device. This process possesses micron-level processing precision, avoiding assembly errors and parasitic effects introduced by traditional discrete packaging, and is suitable for integrated production and mass manufacturing.

[0059] Furthermore, the conductors of both the housing and the second-order coupled Wilkinson power divider circuit are made of copper. Copper's excellent conductivity reduces radiation loss during RF signal transmission, contributing to low-loss and high-stability electrical performance. Copper also possesses good thermal conductivity and ductility, which allows for rapid heat dissipation during signal transmission, mitigating performance degradation caused by high temperatures and increasing device power capacity. Additionally, it enhances the structure's resistance to deformation, reducing mechanical losses during long-term use and extending the power divider's lifespan. Moreover, multiple release holes are provided on the housing corresponding to the open-circuit coupling stub pads, effectively releasing photoresist during processing and ensuring process quality.

[0060] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A self-encapsulated, high-flatness broadband Wilkinson power divider, characterized in that, include: The housing is made of conductive material, the N-order coupled wire Wilkinson power divider is made of open-circuit coupled wire stub pads; The N-order coupled-line Wilkinson power divider is located at the center of the inner cavity of the housing, and includes a Wilkinson power divider unit and an N-order coupled-line unit. The N-order coupling line units are cascaded in sequence, and the end of the Wilkinson power divider unit is connected to the beginning of the first-order coupling line unit. The Wilkinson power divider unit is provided with an input port at its end, and the two coupling line units in the N-order coupling line unit are respectively provided with output ports. The open-circuit coupling line stub pads are respectively loaded onto each of the Nth-order coupling units using a three-dimensional microstructure electrochemical manufacturing process, for mounting resistive elements. The open-circuit coupling line stub pad is a boss structure protruding from the upper surface of the N-order coupling line unit.

2. The self-encapsulated high-flatness broadband Wilkinson power divider according to claim 1, characterized in that, The height of the open-circuit coupling line stub pad is determined using the following formula: Where f is the resonant zero frequency, For the center frequency, This represents the height of the solder pad.

3. The self-encapsulated high flatness broadband Wilkinson power divider according to claims 1-2, characterized in that, Octagonal through holes are provided on the Wilkinson power divider unit and the Nth-order coupling line unit, respectively.

4. The self-encapsulated high flatness broadband Wilkinson power divider according to claim 3, characterized in that, The impedance and coupling coefficient of the Nth-order coupled line unit decrease sequentially.

5. The self-encapsulated high flatness broadband Wilkinson power divider according to claim 3, characterized in that, It also includes a top cover for protecting the resistive element; a number of pins are provided on the top cover, and a number of mounting holes are provided at corresponding positions on the housing; the top cover is positioned by the pins engaging with the mounting holes and interconnected by welding.

6. The self-encapsulated high flatness broadband Wilkinson power divider according to claim 3, characterized in that, It also includes several first medium support strips and several second medium support strips; The plurality of first dielectric support strips are distributed at a set interval within the N-order coupled-line Wilkinson power divider. Each first dielectric support strip penetrates the plane of the N-order coupled-line Wilkinson power divider, and its two ends are respectively fixedly connected to the inner wall of the housing. The plurality of second dielectric support strips are evenly arranged at a set interval on the upper surface of the N-order coupled-line Wilkinson power divider and are fixedly connected to the N-order coupled-line Wilkinson power divider. The two ends of each second dielectric support strip are respectively fixedly connected to the inner wall of the housing.

7. The self-encapsulated high-flatness broadband Wilkinson power divider according to claim 3, characterized in that, The N-order coupled-line Wilkinson power divider is symmetrically arranged inside the housing, and its axis coincides with the axis of the housing.

8. The self-encapsulated high flatness broadband Wilkinson power divider according to claim 3, characterized in that, The self-encapsulated high-flatness broadband Wilkinson power divider is fabricated using a three-dimensional microstructure electrochemical manufacturing process, and the housing is provided with several release holes for releasing photoresist, the diameter of which is 200 μm.

9. The self-encapsulated high flatness broadband Wilkinson power divider according to claim 8, characterized in that, The self-encapsulated high-flatness broadband Wilkinson power divider comprises 10 process layers, each of which is manufactured using three-dimensional microstructure electrochemical processes, and each process layer has a thickness of 100 μm.

10. The self-encapsulated high flatness broadband Wilkinson power divider according to claim 3, characterized in that, The conductor portion of the N-order coupled-line Wilkinson power divider is made of copper.

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