Leaky-wave antenna, antenna system, and terminal device

CN122800928APending Publication Date: 2026-09-22BEIJING BOE TECH DEV CO LTD +1
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Patent Information

Application Number
CN202510344912.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-03-21
Publication Date
2026-09-22

AI Technical Summary

Technical Problem

[0003]然而,在相控阵天线的应用过程中,由于其所包括的馈电网络结构较为复杂,同时因为高剖面的缺点,限制了相控阵天线在终端设备上的应用

Benefits of technology

[0032] In this embodiment, a parallel plate waveguide can be formed by a drain metal layer and multiple resonant patches to achieve traveling wave transmission of radio frequency signals in the dielectric layer, thereby simplifying the structure and achieving a low profile. In addition, when the radio frequency signal is transmitted along the dielectric layer, the frequency modulation processing of the radio frequency signal in the dielectric layer is realized based on the bias voltage applied on the resonant patches, and then the signal is radiated outward in the form of a drain wave along the drain slot on the drain metal layer, thereby realizing the beam scanning effect of the drain antenna with continuous frequency modulation.

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Abstract

This disclosure provides a leaky wave antenna, antenna system, and terminal device, relating to the field of communication technology. The leaky wave antenna includes: a first substrate, a second substrate, a dielectric layer, and a bias module. The first substrate includes a first substrate and a leaky wave metal layer, the leaky wave metal layer having multiple leaky wave slots. The second substrate includes a second substrate and a resonant metal layer, the resonant metal layer including multiple resonant patches, each resonant patch's orthographic projection on the leaky wave metal layer at least partially coinciding with a corresponding leaky wave slot. The bias module is used to apply a bias voltage at least on the resonant patches. In this embodiment, a parallel plate waveguide can be formed by the leaky wave metal layer and multiple resonant patches, thereby realizing traveling wave transmission of radio frequency signals in the dielectric layer, simplifying the structure and achieving a low profile effect. Furthermore, based on the bias voltage applied to the resonant patches, frequency modulation processing of the radio frequency signal is achieved, thereby realizing a continuously frequency-modulated beam scanning effect of the leaky wave antenna.
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Description

Technical Field

[0001] This disclosure relates to the field of communication technology, and more specifically, to a leaky antenna, an antenna system, and a terminal device. Background Technology

[0002] With the rapid development of communication technology, and in order to meet the requirements of beam scanning effect, phased array antennas have gradually been widely used. A phased array antenna consists of multiple antenna elements distributed in an array, and beam scanning is mainly achieved by independently controlling the phase and amplitude of each antenna element.

[0003] However, in the application of phased array antennas, the complex feeding network structure and high profile limit their use in terminal equipment. Therefore, there is an urgent need for an array antenna with a simple structure and low profile characteristics.

[0004] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0005] The purpose of this disclosure is to provide a leaky antenna, antenna system, and terminal device that can simplify the structure while ensuring low profile characteristics.

[0006] According to one aspect of this disclosure, a leaky antenna is provided, comprising:

[0007] The first substrate includes a first substrate and a drain metal layer, wherein the drain metal layer is located on one side of the first substrate and has a plurality of drain slots arranged in an array.

[0008] The second substrate is disposed opposite to the first substrate and includes a second substrate and a resonant metal layer. The resonant metal layer is located on one side of the second substrate and includes a plurality of resonant patches arranged in an array. The orthographic projection of each resonant patch on the leakage metal layer at least partially coincides with a corresponding leakage slot.

[0009] A dielectric layer is located between the first substrate and the second substrate;

[0010] A bias module is connected to at least one of the resonant patches and is used to apply a bias voltage to the resonant patches.

[0011] According to any of the leaky antennas described in this disclosure, each of the leaky slots has a pair of leaky electrodes connected to its edge, and the orthographic projection of each of the resonant patches onto the leaky metal layer at least partially coincides with the pair of leaky electrodes.

[0012] According to any of the leaky antennas described in this disclosure, the leaky antenna further includes a radiating layer located on the side of the first substrate away from the dielectric layer, and includes a plurality of radiating patches arranged in an array.

[0013] Each of the multiple radiating patches corresponds one-to-one with a multiple pair of leakage slots, and the orthographic projection of each radiating patch on the leakage metal layer at least partially overlaps with the corresponding pair of leakage electrodes.

[0014] According to any of the leaky antennas described in this disclosure, the leaky antenna further includes a metasurface layer located on the side of the first substrate away from the dielectric layer, and includes multiple sets of metasurface units distributed in an array.

[0015] Each set of metasurface units corresponds one-to-one with each pair of leakage electrodes, and the orthographic projection of each set of metasurface units on the leakage metal layer at least partially overlaps with the corresponding pair of leakage electrodes.

[0016] According to any of the leaky antennas described in this disclosure, each of the metasurface units is rectangular.

[0017] According to any of the leaky antennas described in this disclosure, each of the metasurface units includes intersecting first rectangular strips and second rectangular strips, the first rectangular strips and the second rectangular strips having different lengths.

[0018] According to any of the leaky antennas described in this disclosure, the leaky metal layer is located on the side of the first substrate close to the dielectric layer, and the first substrate further includes a ground metal layer located on the side of the first substrate away from the dielectric layer.

[0019] The leaky antenna also includes a feed line, which is disposed parallel to the side of the first substrate away from the dielectric layer and includes a feed line core and a ground line. The feed line core passes through the ground metal layer and is connected to the leaky metal layer, and the ground line is connected to the ground metal layer.

[0020] According to any of the leaky antennas described in this disclosure, the leaky antenna further includes a feed waveguide connected to the leaky metal layer, and the feed port of the feed waveguide faces the dielectric layer.

[0021] According to any of the leaky antennas described in this disclosure, the leaky antenna further includes a filter metal layer located on the side of the dielectric layer near the second substrate, and includes multiple sets of filter patches arranged in an array.

[0022] Each set of filter patches corresponds one-to-one with a set of resonant patches, and the orthographic projection of each set of filter patches on the leakage metal layer at least partially overlaps with the corresponding leakage slot.

[0023] According to any of the leaky antennas described in this disclosure, each group of filter patches includes two first filter patches, and the resonant patch is located between the two first filter patches.

[0024] According to any of the leaky antennas described in this disclosure, in a direction perpendicular to the arrangement direction of the resonant patch and the first filter patch, the two first filter patches are misaligned relative to the resonant patch, and the misalignment directions of the two first filter patches are different.

[0025] According to any of the leaky antennas described in this disclosure, the resonant patch is ring-shaped, and each group of filter patches includes four second filter patches, each of the second filter patches being a ring structure with a notch;

[0026] Four second filter patches are periodically distributed around the corresponding resonant patch along a 90-degree angle, with the notch on each second filter patch facing the corresponding resonant patch.

[0027] According to any of the leaky antennas described in this disclosure, the filter patch and the resonant patch are disposed on the same layer.

[0028] According to any of the leaky antennas described in this disclosure, the resonant patch is a rectangular patch, or includes two hexagonal patches, the two hexagonal patches being symmetrically distributed and connected at their corners.

[0029] According to one aspect of this disclosure, an antenna system is provided, including the leaky wave antenna described in the above aspect.

[0030] According to one aspect of this disclosure, a terminal device is provided, including the antenna system described in the above aspect.

[0031] The embodiments disclosed herein include at least the following technical effects:

[0032] In this embodiment, a parallel plate waveguide can be formed by a drain metal layer and multiple resonant patches to achieve traveling wave transmission of radio frequency signals in the dielectric layer, thereby simplifying the structure and achieving a low profile. In addition, when the radio frequency signal is transmitted along the dielectric layer, the frequency modulation processing of the radio frequency signal in the dielectric layer is realized based on the bias voltage applied on the resonant patches, and then the signal is radiated outward in the form of a drain wave along the drain slot on the drain metal layer, thereby realizing the beam scanning effect of the drain antenna with continuous frequency modulation.

[0033] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0034] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0035] Figure 1 A cross-sectional structural schematic diagram of a leaky wave antenna provided in this disclosure is illustrated.

[0036] Figure 2 A schematic diagram of the axial exploded structure of a leaky wave antenna provided in this disclosure is illustrated.

[0037] Figure 3 Example Figure 2 The scan curve of the leaky antenna is shown.

[0038] Figure 4 Example Figure 2 The diagram shows a perspective view of the leaky antenna.

[0039] Figure 5 A schematic diagram of another leaky antenna's axial exploded structure provided by an embodiment of this disclosure is illustrated.

[0040] Figure 6 Example Figure 5 The diagram shows a perspective view of the leaky antenna.

[0041] Figure 7 A cross-sectional structural schematic diagram of another leaky wave antenna provided in this disclosure embodiment is illustrated.

[0042] Figure 8 A schematic diagram of the axial exploded structure of another leaky wave antenna provided in this disclosure is illustrated.

[0043] Figure 9 Example Figure 8 The diagram shows a perspective view of the leaky antenna.

[0044] Figure 10 A cross-sectional structural schematic diagram of another leaky antenna provided in this disclosure is illustrated.

[0045] Figure 11 A cross-sectional structural schematic diagram of another leaky antenna provided in this disclosure is illustrated.

[0046] Figure 12 A top view of a leaky wave antenna provided in this disclosure is illustrated.

[0047] Figure 13A top view of another leaky antenna provided in this disclosure is illustrated.

[0048] Figure 14 A cross-sectional structural schematic diagram of another leaky antenna provided in this disclosure is illustrated.

[0049] Figure 15 A schematic diagram of the axial exploded structure of another leaky wave antenna provided in this disclosure is illustrated.

[0050] Figure 16 Example Figure 15 The diagram shows a perspective view of the leaky antenna.

[0051] Figure 17 A schematic diagram of the axial exploded structure of another leaky antenna provided in this disclosure is illustrated.

[0052] Figure 18 Example Figure 17 The diagram shows a perspective view of the leaky antenna.

[0053] Figure label:

[0054] 10. Leaky wave antenna;

[0055] 11. First substrate; 12. Second substrate; 13. Dielectric layer; 14. Radiation layer; 15. Metasurface layer; 16. Feed line; 17. Feed waveguide;

[0056] 111. First substrate; 112. Drain metal layer; 113. Ground metal layer;

[0057] 1121. Leaking wave slot; 1122. Leaking wave electrode;

[0058] 121. Second substrate; 122. Resonant metal layer; 123. Filtering metal layer; 124. Bias layer;

[0059] 1221, Resonant Patch; 1231, Filter Patch; 1232, First Filter Patch; 1233, Second Filter Patch; 1241, Connecting Trace;

[0060] 141. Radiation patch;

[0061] 151. Metasurface unit; 152. First rectangular strip; 153. Second rectangular strip;

[0062] 161. Feeder wire core; 162. Grounding wire. Detailed Implementation

[0063] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore detailed descriptions of them will be omitted. Furthermore, the drawings are merely illustrative of this disclosure and are not necessarily drawn to scale.

[0064] Although relative terms such as "up" and "down" are used in this specification to describe the relative relationship of one component of an icon to another, these terms are used only for convenience, such as according to the orientation of the examples shown in the accompanying drawings. It is understood that if the device of the icon is flipped upside down, the component described as "up" will become the component described as "down." When a structure is "up" of another structure, it may mean that the structure is integrally formed on the other structure, or that the structure is "directly" mounted on the other structure, or that the structure is "indirectly" mounted on the other structure through another structure.

[0065] The terms “a,” “one,” “the,” “the,” and “at least one” are used to indicate the presence of one or more elements / components / etc.; the terms “including” and “having” are used to indicate an open-ended inclusion and to mean that there may be other elements / components / etc. in addition to the listed elements / components / etc.; the terms “first,” “second,” and “third,” etc., are used only as markers and are not a limitation on the number of objects.

[0066] Figure 1 A partial cross-sectional view of a leaky antenna 10 provided in this disclosure is illustrated. Figure 2 A schematic diagram illustrating a partial axial exploded structure of a leaky antenna 10 provided in this disclosure is shown. For example... Figure 1 and Figure 2 As shown, the leaky antenna 10 includes: a first substrate 11, a second substrate 12, a dielectric layer 13 and a bias module (not shown in the figure). The first substrate 11 and the second substrate 12 are mated together, and the dielectric layer 13 is located between the first substrate 11 and the second substrate 12.

[0067] The first substrate 11 includes a first substrate 111 and a drain metal layer 112, the drain metal layer 112 being located on one side of the first substrate 111 and having a plurality of drain slots 1121 arranged in an array; the second substrate 12 includes a second substrate 121 and a resonant metal layer 122, the resonant metal layer 122 being located on one side of the second substrate 121 and including a plurality of resonant patches 1221 arranged in an array, the orthographic projection of each resonant patch 1221 on the drain metal layer 112 at least partially coinciding with a corresponding drain slot 1121; the bias module is connected to at least the plurality of resonant patches 1221 and is used to apply a bias voltage to the resonant patches 1221.

[0068] In this embodiment, a parallel plate waveguide can be formed by the drain metal layer 112 and multiple resonant patches 1221, thereby realizing the traveling wave transmission of radio frequency signals in the dielectric layer 13, which simplifies the structure and achieves a low profile effect. In addition, when the radio frequency signal is transmitted along the dielectric layer 13, the frequency modulation processing of the radio frequency signal in the dielectric layer 13 is realized based on the bias voltage applied on the resonant patches 1221, and then the signal is radiated outward in the form of a drain wave along the drain slot 1121 on the drain metal layer 112, thereby realizing the beam scanning effect of the drain antenna 10 with continuous frequency modulation.

[0069] Based on the frequency modulation scanning of the leaky antenna 10, simulation tests yielded the following results: Figure 3 The scanning curve shown indicates that the leaky wave antenna 10 can achieve beam scanning in three frequency bands, and the scanning beam in each frequency band has a scanning angle with maximum gain.

[0070] The first substrate 111 and the second substrate 121 can be commonly used PCB insulating materials such as polytetrafluoroethylene glass fiber laminate, phenolic paper laminate, and phenolic glass cloth laminate, or they can be rigid materials with low microwave loss such as quartz and glass. In addition, the first substrate 111 and the second substrate 121 can be a single-layer board structure or a multi-layer composite board structure.

[0071] The materials of the leakage metal layer 112 and the resonant metal layer 122 can be metal silver, metal copper, metal ink, etc., and the leakage metal layer 112 and the resonant metal layer 122 can be film structures formed by processes such as coating, vapor deposition, or imprinting. The leakage slot 1121 on the leakage metal layer 112 can be a rectangular slot, an oblong slot, etc. Taking a rectangular slot as an example, the length of the leakage slot 1121 is λ / 6 to λ / 3, and the width is λ / 36 to λ / 18, where λ is the wavelength corresponding to the center operating frequency of the leakage antenna 10. The resonant patch 1221 included in the resonant metal layer 122 can be a rectangular patch, a circular patch, an annular patch, a hexagonal patch, etc. The spacing of multiple resonant patches 1221 in the row direction and column direction can be equal. For example, the spacing of the resonant patches 1221 in the row direction and column direction is λ / 6 to λ / 2.5.

[0072] For example, such as Figure 4 As shown, the leakage slot 1121 is a rectangular slot, and the resonant patch 1221 is a rectangular patch. The length direction of the resonant patch 1221 is parallel to the width direction of the leakage slot 1121. The orthographic projection of the resonant patch 1221 onto the leakage metal layer 112 is located within the area enclosed by the leakage slot 1121, and the center point of the orthographic projection coincides with the center point of the leakage slot 1121. For example, as... Figure 5 and Figure 6 As shown, the resonant patch 1221 includes two hexagonal patches, which are symmetrically distributed and connected at their corners. Continuing as... Figure 6 As shown, taking the leakage slit 1121 as a rectangular slit as an example, the lines of symmetry of the two hexagonal patches are parallel to the length direction of the leakage slit 1121, and the orthographic projection of the corner endpoints connected on the two hexagonal patches onto the leakage metal layer 112 coincides with the center point of the leakage slit 1121.

[0073] The dielectric layer 13 is a structural layer whose dielectric constant changes upon being subjected to an electric field, thereby changing its refractive index. This allows adjustment of the refractive index of the dielectric layer 13 based on the electric field formed by the applied bias voltage, thus adjusting the resonant frequency and enabling frequency modulation processing of radio frequency signals transmitted along the dielectric layer 13. The material of the dielectric layer 13 can be chosen by those skilled in the art according to actual conditions, and is not limited here. For example, the dielectric layer 13 may include an electrodielectrically variable material, such as liquid crystal or graphene. Furthermore, taking liquid crystal molecules as an example, the first substrate 11 and the second substrate 12 respectively include a first alignment layer and a second alignment layer adjacent to the dielectric layer 13, so as to achieve the reference orientation of the liquid crystal molecules through the first and second alignment layers, facilitating subsequent frequency modulation processing of radio frequency signals by combining the deflection of the liquid crystal molecules.

[0074] In addition, the leaky antenna 10 also includes a frame located between the first substrate 11 and the second substrate 12, and multiple support pillars supporting the first substrate 11 and the second substrate 12. The frame securely connects the first substrate 11 and the second substrate 12, while preventing water and oxygen from seeping in along the gap between the first substrate 11 and the second substrate 12. The multiple support pillars ensure the spacing between the first substrate 11 and the second substrate 12 after they are mated, thereby ensuring the filling thickness of the dielectric layer 13 to effectively achieve frequency modulation processing of radio frequency signals. Furthermore, the periphery of the frame between the first substrate 11 and the second substrate 12 can also be covered with a wave-damping material or a wave-absorbing material to prevent leakage waves from forming along the edge of the dielectric layer 13 when the radio frequency signal is transmitted within the dielectric layer 13, thus affecting the radiation effect of the leaky antenna 10.

[0075] In some embodiments, the bias module can be bound to the edge of the second substrate 12, and when the bias module applies the bias voltage, the bias module can be connected to both the drain metal layer 112 and the resonant patch 1221 to apply the bias voltage, or the drain metal layer 112 can be reused as the ground metal layer 113, and the bias module can be connected only to the resonant patch 1221 to apply the bias voltage.

[0076] The leaky antenna 10 includes multiple leaky elements arranged in an array, and each leaky element consists of a resonant patch 1221 and a corresponding leaky slot 1121 on the leaky metal layer 112. When the bias module is connected to the multiple resonant patches 1221, a bias voltage can be synchronously applied to the multiple resonant patches 1221 to achieve synchronous frequency modulation of the multiple leaky elements, or a bias voltage can be applied to each of the multiple resonant patches 1221 individually to achieve individual frequency modulation of the multiple leaky elements.

[0077] In addition, the array antenna may also include a controller connected to a bias module. The controller can calculate the required bias voltage for each leaky element based on the required beam azimuth angle, and then apply the bias voltage to each leaky element through the bias module to ensure the scanning effect of the leaky antenna 10; or the controller can calculate the required bias voltage for each leaky element based on the holographic principle and the required beam azimuth angle, and then apply the bias voltage to each leaky element through the bias module to ensure both the scanning effect and the holographic scanning characteristics of the leaky antenna 10.

[0078] It should be noted that when a bias voltage is applied to the resonant patch 1221, the size of the resonant patch 1221 can be adjusted to change the electric field between the resonant patch 1221 and the drain metal layer 112, thereby ensuring the frequency modulation effect of the radio frequency signal. Alternatively, the electric field between the resonant patch 1221 and the drain metal layer 112 can be adjusted by changing the area of ​​the overlapping region between the orthographic projection of the resonant patch 1221 on the drain metal layer 112 and the drain metal layer 112, thereby ensuring the frequency modulation effect of the radio frequency signal. Of course, the above two methods can be combined, or adjustments can be made based on other methods, to adjust the electric field between the resonant patch 1221 and the drain metal layer 112. This disclosure does not limit this aspect.

[0079] In some implementations, such as Figure 2 or Figure 5 As shown, the second substrate 12 includes a bias layer 124 located between the second substrate 121 and the resonant metal layer 122; the bias layer 124 includes a plurality of bias circuits distributed in an array (shown as connecting traces 1241 in the figure), each bias circuit is connected to a bias module (not shown in the figure), and each bias circuit is electrically connected to one or more resonant patches 1221.

[0080] Thus, under the drive of the bias module, bias voltages can be applied to multiple resonant patches 1221 through multiple bias circuits to achieve frequency modulation processing of radio frequency signals.

[0081] In the case where multiple resonant patches 1221 are simultaneously subjected to bias voltage, the bias circuit can be a connecting trace 1241, with one end of the connecting trace 1241 connected to the resonant patch 1221 and the other end connected to the bias module. In this case, the connecting trace 1241 can be disposed on the same layer as the resonant patch 1221, that is, the bias layer 124 and the resonant metal layer 122 are the same film layer, so as to simplify the film layer structure of the first substrate 11.

[0082] In the case where multiple resonant patches 1221 are individually biased, the bias module includes a switch control circuit and a voltage loading circuit. The switch control circuit is connected to multiple bias circuits in the row direction, and the voltage loading circuit is connected to multiple bias circuits in the column direction. Thus, the switch control circuit can control the on / off state of the multiple bias circuits in the row direction, and the voltage loading circuit can control the voltage loading of the multiple bias circuits in the column direction, thereby achieving the application of a bias voltage on a resonant patch 1221 at the row-column intersection.

[0083] At this point, the bias circuit includes at least a transistor. The control electrode of the transistor is connected to the switching control circuit, and the first and second electrodes of the transistor are connected to the voltage loading circuit and the resonant patch 1221, respectively. Correspondingly, the bias layer 124 includes at least an active layer and a gate metal layer. The active layer includes an active portion, which includes a channel region and a first connection portion and a second connection portion located on both sides of the channel region. The gate metal layer includes a conductive portion, and the channel region and the conductive portion have overlapping regions when projected onto the second substrate 121. Thus, the control electrode of the transistor can be formed through the conductive portion, and the first and second electrodes of the transistor can be formed through the first and second connection portions.

[0084] In this embodiment of the disclosure, when feeding the leaky antenna 10, it can be fed through a waveguide (i.e., feeding waveguide 17) or through a coaxial line (i.e., feeding line 16).

[0085] In some implementations, such as Figure 7 As shown, the drain metal layer 112 is located on the side of the first substrate 111 close to the dielectric layer 13. The first substrate 11 also includes a ground metal layer 113, which is located on the side of the first substrate 111 away from the dielectric layer 13. The drain antenna 10 also includes a feed line 16, which includes a feed line core 161 and a ground line 162. The feed line core 161 passes through the ground metal layer 113 and is connected to the drain metal layer 112. The ground line 162 is connected to the ground metal layer 113.

[0086] The grounding metal layer 113 has a clearance opening, the first substrate 111 has a via, the feed wire core 161 of the feed wire 16 passes through the clearance opening and the via in sequence and is connected to the leakage metal layer 112, and the ground wire 162 of the feed wire 16 is connected to the grounding metal layer 113 at the edge of the clearance opening.

[0087] Thus, the radio frequency signal fed in by the feed line 16 can be fed into the dielectric layer 13 along the drain metal layer 112 to realize the transmission of the radio frequency signal in the dielectric layer 13. At the same time, based on the application of the bias voltage, the frequency modulation processing of the radio frequency signal is realized.

[0088] The grounding metal layer 113 can be made of materials such as silver, copper, or metallic ink, and can be formed by processes such as coating, vapor deposition, or imprinting. Additionally, the portion of the feed line 16 exposed on the side of the first substrate 11 facing away from the dielectric layer 13 can be arranged relatively parallel to the first substrate 111 to avoid the feed line 16 affecting the low-profile characteristics of the leaky antenna 10.

[0089] In other implementations, such as Figure 1 As shown, the leaky antenna 10 also includes a feed waveguide 17, which is connected to the leaky metal layer 112, and the feed port of the feed waveguide 17 faces the dielectric layer 13.

[0090] Among them, the leakage metal layer 112 is reused as a ground metal, thereby realizing the relative grounding of the feed waveguide 17 through the connection between the leakage metal layer 112 and the feed waveguide 17.

[0091] Thus, the feed waveguide 17 can directly feed radio frequency signals into the dielectric layer 13 to realize the transmission of radio frequency signals within the dielectric layer 13. At the same time, based on the application of bias voltage, frequency modulation processing of radio frequency signals can be realized. In addition, based on the feed design of the feed waveguide 17, the structure of a dedicated ground metal layer 113 is avoided, thereby simplifying the structural design of the leaky antenna 10 and ensuring the low profile characteristics of the leaky antenna 10.

[0092] The feed waveguide 17 is a tubular structure, such as a circular tube or a rectangular tube. In addition, since the feed port of the feed waveguide 17 faces the dielectric layer 13, it enables side feeding of the leaky antenna 10, thereby avoiding the feed waveguide 17 from affecting the low profile characteristics of the leaky antenna 10.

[0093] In some implementations, such as Figure 2 or Figure 4 As shown, the edge of the leakage slot 1121 is connected to a pair of leakage electrodes 1122 that are relatively distributed. The orthogonal projection of each resonant patch 1221 on the leakage metal layer 112 at least partially coincides with the pair of leakage electrodes 1122.

[0094] Thus, an LC resonant circuit can be constructed based on a pair of drain electrodes 1122, so as to effectively ensure the resonance effect of the radio frequency signal when it is transmitted in the dielectric layer 13, thereby effectively ensuring the frequency modulation effect of the radio frequency signal.

[0095] The drain electrode 1122 can be an arrow-shaped structure or a T-shaped structure, as long as an LC resonant circuit can be formed based on a pair of drain electrodes 1122. Furthermore, the resonant circuit formed by a pair of drain electrodes 1122 can be an LC series resonant circuit or an LC parallel resonant circuit. For example, such as... Figure 4 As shown, the wave-leaking slit 1121 is a rectangular slit, and each of the two long edges of the wave-leaking slit 1121 is connected to a wave-leaking electrode 1122. The wave-leaking electrode 1122 has a T-shaped structure, and a pair of wave-leaking electrodes 1122 are distributed opposite each other in the width direction of the wave-leaking slit 1121.

[0096] In some implementations, such as Figure 8 and Figure 9 ,or Figure 10 As shown, the leaky antenna 10 also includes a radiating layer 14, which is located on the side of the first substrate 11 away from the dielectric layer 13, and includes a plurality of radiating patches 141 arranged in an array; the plurality of radiating patches 141 correspond one-to-one with a plurality of leaky slots 1121, and the orthographic projection of each radiating patch 141 on the leaky metal layer 112 at least partially overlaps with the corresponding pair of leaky electrodes 1122.

[0097] In this way, the parasitic unit of the leakage electrode 1122 can be formed by the radiating patch 141, thereby effectively expanding the bandwidth of the leakage antenna 10 by increasing the resonant point and realizing the wideband radiation characteristics of the leakage antenna 10.

[0098] Among them, the radiating patch 141 can be rectangular, circular, rectangular array, circular ring array, etc., as long as it can increase the resonant point of the radio frequency signal and expand the bandwidth of the leaky antenna 10 based on the resonance between it and the leakage electrode 1122.

[0099] In other implementations, such as Figure 11 As shown, the leaky antenna 10 also includes a metasurface layer 15, which is located on the side of the first substrate 11 away from the dielectric layer 13 and includes multiple sets of metasurface units 151 arranged in an array.

[0100] The metasurface layer 15 includes multiple metasurface units 151 arranged in an array, and the multiple metasurface units 151 are divided into a group of metasurface units 151 corresponding to each leakage wave unit. That is, the metasurface layer 15 includes multiple groups of metasurface units 151, and the multiple groups of metasurface units 151 correspond one-to-one with multiple pairs of leakage wave electrodes 1122. The orthographic projection of each group of metasurface units 151 on the leakage wave metal layer 112 at least partially overlaps with the corresponding pair of leakage wave electrodes 1122.

[0101] Thus, by using a set of metasurface units 151 corresponding to each pair of leaky electrodes 1122, parasitic units of the leaky electrodes 1122 can be formed, thereby effectively expanding the bandwidth of the leaky antenna 10 by increasing the resonant point and realizing the wideband radiation characteristics of the leaky antenna 10. In addition, the transmission and reflection characteristics of the radio frequency signal radiated outward in the form of a leaky wave along each leaky slot 1121 can be adjusted by the characteristics of the metasurface units 151, thereby further adjusting the antenna effect of the leaky antenna 10.

[0102] The metasurface layer 15 includes metasurface units 151 that can be rectangular, circular, annular, etc. For example, such as... Figure 12 As shown, each metasurface unit 151 included in the metasurface layer 15 is rectangular; or as shown in the figure. Figure 13 As shown, each metasurface unit 151 of the metasurface layer 15 includes intersecting first rectangular strips 152 and second rectangular strips 153.

[0103] When the metasurface unit 151 includes a first rectangular strip 152 and a second rectangular strip 153, the first rectangular strip 152 and the second rectangular strip 153 can intersect perpendicularly, or the angle between their intersections can be greater than or equal to 85 degrees and less than or equal to 90 degrees. Furthermore, the first rectangular strip 152 and the second rectangular strip 153 can have the same length. In this case, since the resonant frequencies formed by the first rectangular strip 152 and the second rectangular strip 153 are equal, the single-band radiation effect of the leaky antenna 10 can be achieved. Of course, the lengths of the first rectangular strip 152 and the second rectangular strip 153 can also be different. In this case, since the resonant frequencies formed by the first rectangular strip 152 and the second rectangular strip 153 are unequal, the dual-band radiation effect of the leaky antenna 10 can be achieved.

[0104] In some implementations, such as Figure 14 As shown, the leaky antenna 10 also includes a filter metal layer 123, which is located on the side of the dielectric layer 13 near the second substrate 12 and includes multiple sets of filter patches 1231 arranged in an array. The multiple sets of filter patches 1231 correspond one-to-one with multiple resonant patches 1221, and the orthographic projection of each set of filter patches 1231 on the leaky metal layer 112 at least partially coincides with the corresponding leaky slot 1121.

[0105] Thus, by setting the filter patch 1231, the filtering of radio frequency signals can be achieved based on the mutual coupling between each group of filter patches 1231 and the corresponding resonant patch 1221, thereby realizing the bandpass filtering characteristics of the leaky antenna 10.

[0106] In this configuration, the filter patch 1231 and the resonant patch 1221 can be disposed on the same layer, meaning the filter metal layer 123 and the resonant metal layer 122 are the same film layer. For example, both the filter patch 1231 and the resonant patch 1221 are located on the side of the second substrate 121 closest to the dielectric layer 13. Alternatively, the filter patch 1231 and the resonant patch 1221 can be disposed on different layers, meaning the filter metal layer 123 and the resonant metal layer 122 are different film layers. For example, the resonant patch 1221 is located on the side of the second substrate 121 closest to the dielectric layer 13, and the filter patch 1231 is located on the side of the second substrate 121 furthest from the dielectric layer 13.

[0107] In some implementations, such as Figure 15 and Figure 16 As shown, each group of filter patches 1231 includes two first filter patches 1232; the resonant patch 1221 is located between the two first filter patches 1232.

[0108] In this way, the first filter patches 1232 on both sides of the resonant patch 1221 can form a coupling circuit with the resonant patch 1221, ensuring the coupling effect between the two first filter patches 1232 and the resonant patch 1221, thereby ensuring the filtering effect of the radio frequency signal.

[0109] The shape of the first filter patch 1232 can be set with reference to the shape of the resonant patch 1221. For example, both the first filter patch 1232 and the resonant patch 1221 are rectangular, the length directions of the first filter patch 1232 and the resonant patch 1221 are parallel, and the two first filter patches 1232 are located on both sides of the resonant patch 1221 along the width direction (which can be the arrangement direction of the resonant patch 1221 and the first filter patch 1232).

[0110] Optionally, in the arrangement direction of the resonant patch 1221 and the first filter patch 1232, the distance between the two first filter patches 1232 and the resonant patch 1221 is equal. This helps to ensure the symmetry of the coupling loop formed between the two first filter patches 1232 and the resonant patch 1221, thereby ensuring the uniformity of the coupling effect between the two first filter patches 1232 and the resonant patch 1221.

[0111] Optionally, in a direction perpendicular to the arrangement direction of the resonant patch 1221 and the first filter patch 1232, the two first filter patches 1232 are staggered relative to the resonant patch 1221, and the staggered directions of the two first filter patches 1232 are different. This helps to reduce or even avoid the influence between the coupling loops formed by the two first filter patches 1232 and the resonant patch 1221, thereby further ensuring the coupling effect between the two first filter patches 1232 and the resonant patch 1221.

[0112] Along the arrangement direction of the resonant patch 1221 and the first filter patch 1232, both first filter patches 1232 have overlapping areas with the resonant patch 1221, and there is no overlapping area between the two first filter patches 1232.

[0113] Furthermore, the two first filter patches 1232 are staggered by equal distances in a direction perpendicular to the arrangement direction to ensure that the coupling areas of the two first filter patches 1232 on the resonant patch 1221 are of the same size, thereby ensuring the uniformity of the coupling effect between the two first filter patches 1232 and the resonant patch 1221. For example, both the first filter patch 1232 and the resonant patch 1221 are rectangular, and their length directions are parallel. In this case, the two first filter patches 1232 each form a coupling loop with half of the area on the resonant patch 1221, thus ensuring the coupling effect between the two first filter patches 1232 and the resonant patch 1221.

[0114] In other implementations, such as Figure 17 and Figure 18 As shown, the resonant patch 1221 is ring-shaped, and each group of filter patches 1231 includes four second filter patches 1233. Each second filter patch 1233 is a ring structure with a notch. The four second filter patches 1233 are periodically distributed around the corresponding resonant patch 1221 along a 90-degree angle, and the notch on each second filter patch 1233 faces the corresponding resonant patch 1221.

[0115] In this way, the four second filter patches 1233 around the resonant patch 1221 can form a fifth-order coupling circuit with the resonant patch 1221, thereby achieving high suppression characteristics while ensuring the filtering effect, so as to further improve the antenna effect of the leaky antenna 10.

[0116] The resonant patch 1221 can be a rectangular ring patch, a circular ring patch, etc., and correspondingly, the second filter patch 1233 can be a rectangular ring patch or a circular ring patch with a notch. When the second filter patch 1233 is a rectangular ring structure, the notch can be located at the corner of the rectangular ring.

[0117] This disclosure also provides an antenna system, which can be a communication system for terminal devices, a communication system applied to satellites, a base station system for antenna base stations, etc. This antenna system includes the leaky-wave antenna 10 described in the above embodiments. Thus, based on the leaky-wave antenna 10, while achieving a scanning effect, it is easy to improve the space utilization of the antenna system, thereby facilitating the miniaturization of the antenna system.

[0118] This disclosure also provides a terminal device, which can be a portable terminal, including the antenna system described in the above embodiments. Based on the antenna system described above, it is convenient to improve the space utilization of the terminal device while ensuring its communication performance.

[0119] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. A leaky wave antenna, characterized in that, include: The first substrate includes a first substrate and a drain metal layer, wherein the drain metal layer is located on one side of the first substrate and has a plurality of drain slots arranged in an array. The second substrate is disposed opposite to the first substrate and includes a second substrate and a resonant metal layer. The resonant metal layer is located on one side of the second substrate and includes a plurality of resonant patches arranged in an array. The orthographic projection of each resonant patch on the leakage metal layer at least partially coincides with a corresponding leakage slot. A dielectric layer is located between the first substrate and the second substrate; A bias module is connected to at least one of the resonant patches and is used to apply a bias voltage to the resonant patches.

2. The leaky wave antenna as described in claim 1, characterized in that, Each of the leakage slots is connected to a pair of leakage electrodes that are distributed opposite to each other, and the orthographic projection of each resonant patch on the leakage metal layer at least partially coincides with the pair of leakage electrodes.

3. The leaky wave antenna as described in claim 2, characterized in that, The leaky antenna further includes a radiating layer located on the side of the first substrate away from the dielectric layer, and includes a plurality of radiating patches arranged in an array. Each of the multiple radiating patches corresponds one-to-one with a multiple pair of leakage slots, and the orthographic projection of each radiating patch on the leakage metal layer at least partially overlaps with the corresponding pair of leakage electrodes.

4. The leaky wave antenna as described in claim 2, characterized in that, The leaky antenna further includes a metasurface layer, which is located on the side of the first substrate away from the dielectric layer and includes multiple sets of metasurface units arranged in an array. Each set of metasurface units corresponds one-to-one with each pair of leakage electrodes, and the orthographic projection of each set of metasurface units on the leakage metal layer at least partially overlaps with the corresponding pair of leakage electrodes.

5. The leaky wave antenna as described in claim 4, characterized in that, Each of the metasurface units is rectangular.

6. The leaky wave antenna as described in claim 4, characterized in that, Each of the metasurface units includes intersecting first and second rectangular strips, the first and second rectangular strips having different lengths.

7. The leaky wave antenna as described in claim 1 or 2, characterized in that, The leakage metal layer is located on the side of the first substrate close to the dielectric layer. The first substrate also includes a ground metal layer, which is located on the side of the first substrate away from the dielectric layer. The leaky antenna also includes a feed line, which is disposed parallel to the side of the first substrate away from the dielectric layer and includes a feed line core and a ground line. The feed line core passes through the ground metal layer and is connected to the leaky metal layer, and the ground line is connected to the ground metal layer.

8. The leaky wave antenna as described in any one of claims 1-6, characterized in that, The leaky antenna further includes a feed waveguide connected to the leaky metal layer, and the feed port of the feed waveguide faces the dielectric layer.

9. The leaky wave antenna as described in any one of claims 1-6, characterized in that, The leaky antenna further includes a filter metal layer, which is located on the side of the dielectric layer near the second substrate and includes multiple sets of filter patches arranged in an array. Each set of filter patches corresponds one-to-one with a set of resonant patches, and the orthographic projection of each set of filter patches on the leakage metal layer at least partially overlaps with the corresponding leakage slot.

10. The leaky wave antenna as described in claim 9, characterized in that, Each set of filter patches includes two first filter patches, and the resonant patch is located between the two first filter patches.

11. The leaky-wave antenna as described in claim 10, characterized in that, In a direction perpendicular to the arrangement direction of the resonant patch and the first filter patch, the two first filter patches are misaligned relative to the resonant patch, and the misalignment directions of the two first filter patches are different.

12. The leaky wave antenna as described in claim 9, characterized in that, The resonant patch is ring-shaped, and each group of filter patches includes four second filter patches, each of which is a ring structure with a notch; Four second filter patches are periodically distributed around the corresponding resonant patch along a 90-degree angle, with the notch on each second filter patch facing the corresponding resonant patch.

13. The leaky-wave antenna as described in claim 9, characterized in that, The filter patch and the resonant patch are arranged in the same layer.

14. The leaky-wave antenna as described in any one of claims 1-6, characterized in that, The resonant patch is a rectangular patch, or it may include two hexagonal patches, which are symmetrically distributed and connected at their corners.

15. An antenna system, characterized in that, Includes the leaky antenna as described in any one of claims 1-14.

16. A terminal device, characterized in that, Including the antenna system of claim 15.