Power module and power supply device

Abstract

This application provides a power module and a power supply device. The power module includes a half-bridge circuit and a driver. The half-bridge circuit includes two power transistors connected in series, which are not grounded. The driver includes two driving sections, one driving section for driving one power transistor, and the circuit containing the driving section shares a ground with the corresponding power transistor. The power module also includes a power supply and two first resistors connected in series. Each driving section includes a power input terminal, a high-voltage signal transmission terminal, and a voltage output terminal. One end of the power supply is connected to the high-voltage signal transmission terminal through the power input terminal, and the other end of the power supply is grounded. The high-voltage signal transmission terminal is also grounded through the two first resistors connected in series, and the voltage at the high-voltage signal transmission terminal is used to drive one power transistor to conduct. The voltage output terminal is connected to the connection point between the two first resistors connected in series, and the voltage output terminal is used to output voltage to the connection point.

Description

Technical Field

[0001] This application relates to the field of circuits, and more specifically, to a power module and power supply device. Background Technology

[0002] As an important component of power supply modules, power conversion circuits are typically used to convert the energy of the input power supply into the output form required by the load, such as alternating current to direct current (AC-DC), direct current to direct current (DC-DC), or direct current to alternating current (DC-AC).

[0003] Currently, power conversion circuits in power modules mostly employ a half-bridge circuit design. A half-bridge circuit primarily consists of two power transistors connected in series, which alternately conduct during power conversion. However, in practical applications, different power transistors require different drive voltages to conduct, and the drivers in current power modules generally only provide a fixed drive voltage, failing to adequately meet the varying drive voltage requirements of different power transistors during conduction. Summary of the Invention

[0004] This application provides a power module and power supply device that can flexibly adjust the drive voltage provided by the driver to the power transistor to meet the different drive voltage requirements of different power transistors when they are turned on.

[0005] Firstly, a power supply module is provided, comprising a half-bridge circuit and a driver. The half-bridge circuit includes two power transistors connected in series, the two power transistors not sharing a common ground. The driver includes two driving sections, one driving section for driving one power transistor, and the circuit containing one driving section shares a common ground with the corresponding power transistor. The power supply module also includes a power supply and two first resistors connected in series. Each driving section includes a power input terminal, a high-voltage signal transmission terminal, and a voltage output terminal. One end of the power supply is connected to the high-voltage signal transmission terminal through the power input terminal, and the other end of the power supply is grounded. The high-voltage signal transmission terminal is also grounded through the two first resistors connected in series, and the voltage at the high-voltage signal transmission terminal is used to drive one power transistor to conduct. The voltage output terminal is connected to the connection point between the two first resistors connected in series, and the voltage output terminal is used to output voltage to the connection point.

[0006] Based on the above design, when any driving section in the driver needs to turn on its corresponding power transistor, the power supply can form a grounding loop through the power input terminal, high-voltage signal transmission terminal, and two series-connected first resistors in that driving section. Furthermore, the voltage output terminal of that driving section can output a voltage to the connection point between the two first resistors in the grounding loop. In this grounding loop, the voltage at the high-voltage signal transmission terminal serves as the driving voltage for turning on the power transistor. Since the two first resistors are connected in series in the grounding loop, the voltage at the high-voltage signal transmission terminal can be flexibly adjusted by adjusting the voltage output from the power output terminal to the connection point between the two first resistors, and by adjusting at least one of the resistance ratios of the two first resistors. That is, the driving voltage provided by any driving section to its corresponding power transistor can be flexibly adjusted. Therefore, the driving voltage provided by any driving section to its corresponding power transistor can meet the different driving voltage requirements of different power transistors when they are turned on.

[0007] In one implementation, at least one drive section further includes a load terminal, which is grounded through a load in the power module. The load terminal is used to receive the voltage output by the power supply through the power input terminal in its drive section and to deliver the received voltage to the load.

[0008] Based on the above design, the driver can act as a power source, supplying power to nearby loads through its own designated load terminals. This not only facilitates powering the loads but also improves the utilization rate of the driver.

[0009] In one implementation, each driving section further includes a high-voltage signal output terminal, a first switching circuit, and a driving signal input terminal. The high-voltage signal output terminal is connected to a high-voltage signal transmission terminal via the first switching circuit, and is also connected to the control terminal of a power transistor. The high-voltage signal output terminal is used to send a signal to a power transistor to indicate the voltage of the high-voltage signal transmission terminal. The first switching circuit is used to: turn on the circuit between the high-voltage signal output terminal and the high-voltage signal transmission terminal when a high-level signal is received at the driving signal input terminal; and turn off the circuit between the high-voltage signal output terminal and the high-voltage signal transmission terminal when a low-level signal is received at the driving signal input terminal.

[0010] Based on the above design, based on the indication of high-level and low-level signals received at the drive signal input terminal of any drive section, the first switch in that drive section can turn on or off the circuit between the high-voltage signal transmission terminal and the high-voltage signal output terminal, thereby turning on or off the circuit between the high-voltage signal transmission terminal and the control terminal of the power transistor. This ensures the normal on / off operation of the power transistor driven by that drive section. Furthermore, by connecting the high-voltage signal transmission terminal to the control terminal of the power transistor via the first switch circuit and the high-voltage signal output terminal in its own drive section, it is easy for the driver to automatically control the on / off state of the circuit between the high-voltage signal transmission terminal and the control terminal of the power transistor. Compared to connecting the high-voltage signal transmission terminal to the control terminal of the power transistor via a switch circuit located outside the driver, this reduces the complexity of the circuit design and control logic in the power module.

[0011] In one implementation, the power module further includes a magnetic device, and the high-voltage signal output terminal is connected to the control terminal of a power transistor via the magnetic device. The length of the transmission wire between the magnetic device and the control terminal of the power transistor is less than the length of the transmission wire between the magnetic device and the high-voltage signal output terminal.

[0012] Based on the above design, the magnetic device connected between the driver and the half-bridge circuit can be placed closer to the power transistor in the half-bridge circuit. In this way, the magnetic device can better suppress the drive oscillation of the power transistor.

[0013] In one implementation, the half-bridge circuit includes multiple sets of two power transistors connected in series, multiple sets of two power transistors connected in parallel, and multiple connection points formed between two power transistors in the multiple sets of two power transistors connected together. There is one magnetic device, and the high-voltage signal output terminal is connected to the control terminal of one power transistor in each set of two power transistors through this magnetic device. The length of the transmission line between the magnetic device and each control terminal it is connected to is less than the length of the transmission line between the magnetic device and the high-voltage signal output terminal.

[0014] Based on the above design, the high-voltage signal output terminal can be connected to one of the two power transistors in each series-connected pair in the half-bridge circuit via a magnetic device, with this magnetic device positioned closer to the connected power transistor in each series-connected pair. This magnetic device not only better suppresses the drive oscillation of the connected power transistor in each series-connected pair, but also suppresses oscillation crosstalk generated between multiple series-connected power transistors in parallel. Furthermore, this reduces the number of magnetic devices used in the power module, thus contributing to cost optimization.

[0015] In one implementation, the half-bridge circuit includes multiple sets of two power transistors connected in series, multiple sets of two power transistors connected in parallel, and multiple connection points formed between two power transistors in the multiple sets of two power transistors connected together. There are multiple magnetic devices, and the high-voltage signal output terminal is connected to the control terminal of one of the power transistors in one set of power transistors through a magnetic device. The length of the transmission line between a magnetic device and its connected control terminal is less than the length of the transmission line between a magnetic device and the high-voltage signal output terminal.

[0016] Based on the above design, the high-voltage signal output terminal can be connected to one of the power transistors in multiple sets of two series-connected power transistors using multiple magnetic devices, with each magnetic device positioned closer to the power transistor it is connected to. This multiple magnetic devices not only better suppress the drive oscillation of the power transistor connected in each set of two series-connected power transistors, but also suppress oscillation crosstalk generated between multiple sets of two series-connected power transistors connected in parallel. Furthermore, since one power transistor in each set of two series-connected power transistors is connected to a different magnetic device, it prevents the failure of one magnetic device from affecting the normal operation of other magnetic devices.

[0017] In one implementation, each driving section further includes a low-voltage signal output terminal, a low-voltage signal transmission terminal, and a second switching circuit. The low-voltage signal transmission terminal is connected to one end of a power supply via a power input terminal. It is also connected to the low-voltage signal output terminal via the second switching circuit. The low-voltage signal output terminal is connected to the control terminal of a power transistor. The low-voltage signal output terminal sends a signal to the power transistor to indicate the voltage at the low-voltage signal transmission terminal, and the voltage at the low-voltage signal transmission terminal drives the power transistor to turn off. The second switching circuit is used to: connect the circuit between the low-voltage signal transmission terminal and the low-voltage signal output terminal when a low-level signal is received at the driving signal input terminal; and disconnect the circuit between the low-voltage signal transmission terminal and the low-voltage signal output terminal when a high-level signal is received at the driving signal input terminal.

[0018] Based on the above design, when any driving section in the driver needs to drive its corresponding power transistor to turn off, the power supply can deliver voltage to the low-voltage signal transmission terminal through the power input terminal of that driving section, and the second switching circuit can conduct the circuit between the low-voltage signal transmission terminal and the low-voltage signal output terminal. Furthermore, the low-voltage signal output terminal can deliver the voltage from the low-voltage signal transmission terminal to the control terminal of the power transistor to drive it to turn off.

[0019] In one implementation, the power module further includes multiple capacitors. The high-voltage signal transmission terminal connects one end of one capacitor to two first resistors connected in series, while the other end of the capacitor is grounded; the low-voltage signal transmission terminal is grounded through another capacitor.

[0020] Based on the above design, filtering and loop stability can be maintained through grounded capacitors, thereby improving the reliability of the power module operation.

[0021] In one implementation, the power module further includes multiple second resistors, with the high-voltage signal output terminal and the low-voltage signal output terminal each connected to the control terminal of a power transistor via a second resistor.

[0022] Based on the above design, the speed at which the high-voltage signal output terminal and the low-voltage signal output terminal in any of the connected drive parts deliver the drive voltage to the control terminal of the corresponding power transistor can be adjusted by the second resistor, thereby ensuring the stable operation of any drive part in driving the corresponding power transistor to turn on or off.

[0023] In a second aspect, a power supply device is provided, which includes a plurality of power modules as described in any one of the first aspects above, wherein the plurality of power modules are connected in parallel and the plurality of power modules are used to supply power to a load.

[0024] It should be understood that a detailed description of the technical effects of the second aspect can be found in the above description of the technical effects of the first aspect, and will not be repeated here. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the structure of a power supply device provided in an embodiment of this application.

[0026] Figure 2 This is a schematic diagram of the structure of a power module provided in an embodiment of this application.

[0027] Figure 3 This is a schematic diagram of another power module provided in an embodiment of this application.

[0028] Figure 4 This is a schematic diagram of another power module provided in the embodiments of this application. Detailed Implementation

[0029] To facilitate understanding of the embodiments of this application, the following points will be explained before introducing the embodiments of this application.

[0030] In the description of the embodiments of this application, "connection" can refer to an electrical connection. An electrical connection can be understood as the transmission of signals between two electrical components through a direct or indirect electrical connection. For example, an electrical connection between A and B can be understood as a direct electrical connection between A and B, or an indirect electrical connection between A and B through one or more other electronic devices.

[0031] In the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more features. Furthermore, in the description of the embodiments of this application, "multiple" refers to two or more, and "at least one" and "one or more" refer to one, two, or more than two.

[0032] The technical solutions in this application will now be described with reference to the accompanying drawings.

[0033] First, to facilitate understanding of the technical solutions provided in the embodiments of this application, we will introduce the application scenarios applicable to the embodiments of this application.

[0034] Figure 1 This is a schematic diagram of the structure of a power supply device 10 provided in an embodiment of this application.

[0035] See Figure 1 The power supply device 10 includes multiple power modules 11 connected in parallel. The input terminals of the multiple power modules 11 are used to connect to the power supply 20, and the output terminals of the multiple power modules 11 are used to connect to the load 30. Each power module 11 includes a power conversion circuit, which converts the electrical energy output from the power supply 20 into the form of electrical energy required by the load 30 and then outputs it to the load 30 to supply power to the load 30.

[0036] It should be understood that in the embodiments of this application, the power supply equipment 10 can be a device used to provide power in scenarios such as communication base stations, energy storage systems, photovoltaic systems, data centers, or charging stations. For example, the power supply equipment 10 can be a power cabinet in a communication base station, and correspondingly, the load 30 can be a power-consuming device such as a remote radio unit (RRU), active antenna unit (AAU), or baseband unit (BBU) in the communication base station. As another example, the power supply equipment 10 can also be a charging pile in a charging station, and correspondingly, the load 30 can be an electric vehicle.

[0037] It should also be understood that, in the embodiments of this application, the power module 11 may be a power converter in the power supply device 10.

[0038] For example, in one instance, with power supply 20 being AC power, the power conversion circuit in power module 11 can be used to convert the AC power output from the AC power supply into DC power before outputting it to load 30. That is, power module 11 can be a rectifier, and the power conversion circuit can be a power factor correction (PFC) circuit.

[0039] In another example, when power supply 20 is a DC power supply, the power conversion circuit in power module 11 can be used to convert the DC power output from the DC power supply into voltage before outputting it to load 20. That is, power module 11 can be a DC-DC converter, and the power conversion circuit can be a DC-DC conversion circuit. Alternatively, the power conversion circuit in power module 11 can also be used to convert the DC power output from the DC power supply into AC power before outputting it. That is, power module 11 can be an inverter, and the power conversion circuit can be an inverter circuit.

[0040] As described in the background section above, the power conversion circuit in the power module 11 typically employs a half-bridge circuit design. This half-bridge circuit mainly consists of two power transistors connected in series, which alternately conduct during power conversion. However, in practical applications, different power transistors require different drive voltages to conduct. For example, when the power transistors are made of gallium nitride, the required drive voltage is generally 6V. Conversely, when the power transistors are made of silicon, the required drive voltage is generally 12V. However, in the current power module 11, the driver can generally only provide a fixed drive voltage, resulting in poor driver compatibility and an inability to adequately meet the different drive voltage requirements of different power transistors during conduction.

[0041] Based on the above, this application provides a power module including a half-bridge circuit and a driver. The half-bridge circuit includes two power transistors connected in series, which are not grounded. The driver includes two driving sections, one driving section for driving one power transistor, and the circuit containing the driving section shares a ground with the corresponding power transistor. Furthermore, the power module includes a power supply and two first resistors connected in series. Each driving section includes a power input terminal, a high-voltage signal transmission terminal, and a voltage output terminal. One end of the power supply is connected to the high-voltage signal transmission terminal via the power input terminal, and the other end of the power supply is grounded. The high-voltage signal transmission terminal is also grounded via the two first resistors connected in series, and the voltage at the high-voltage signal transmission terminal is used to drive the corresponding power transistor to conduct. The power output terminal is connected to the connection point between the two first resistors connected in series, and the power output terminal is used to output voltage to this connection point.

[0042] Based on the above design, when any driving section of the driver is used to drive a corresponding power transistor in the half-bridge circuit, the power supply can form a ground loop through the power input terminal, the high-voltage signal transmission terminal, and the two first resistors connected in series in that driving section. Furthermore, the voltage output terminal of that driving section can output a voltage to the connection point between the two first resistors in the ground loop. In this ground loop, the voltage at the high-voltage signal transmission terminal serves as the driving voltage for turning on the power transistor. Since the two first resistors are connected in series in the ground loop, the voltage at the high-voltage signal transmission terminal can be flexibly adjusted by adjusting the voltage output from the power output terminal to the connection point between the two first resistors, and by adjusting at least one of the resistance ratios of the two first resistors. That is, the driving voltage provided by any driving section to its corresponding power transistor can be flexibly adjusted. Therefore, the driving voltage provided by any driving section to its corresponding power transistor can meet the different driving voltage requirements of different power transistors when they are turned on.

[0043] It should be understood that the power module provided in this application embodiment can be a power converter such as a rectifier, DC-DC converter, or inverter. The power module provided in this application embodiment can be applied to power supply equipment in scenarios such as communication base stations, energy storage systems, photovoltaic systems, data centers, or charging stations, for example, in the aforementioned... Figure 1 The power supply device 10 shown. Alternatively, the power module provided in this embodiment can also be applied to power-consuming devices such as RRU, AAU, or BBU in a communication base station.

[0044] The power module provided in the embodiments of this application will now be described in conjunction with the accompanying drawings.

[0045] Figure 2 This is a schematic diagram of the structure of a power module 40 provided in an embodiment of this application.

[0046] See Figure 2 The power module 40 includes a half-bridge circuit 41, which includes two power transistors connected in series, and the two power transistors do not share a common ground. That is, the ground terminals of the two power transistors are not connected together.

[0047] Specifically, such as Figure 2 As shown, taking a half-bridge circuit 41 including a series-connected upper power transistor Q1 and a lower power transistor Q2 as an example, the drain of the upper power transistor Q1 is connected to the input power supply Vin, and the source of the upper power transistor Q1 is connected to the drain of the lower power transistor Q2. Furthermore, the sources of the upper power transistor Q1 and the lower power transistor Q2 are connected to different reference grounds. Thus, by alternately turning on the upper power transistor Q1 and the lower power transistor Q2, the electrical energy output from the input power supply Vin can be converted into power and output.

[0048] It should be understood that in the embodiments of this application, the power transistor can refer to various types of power switching transistors, such as metal oxide semiconductor field effect transistors (MOSFETs), bipolar junction transistors (BJTs), and insulated gate bipolar transistors (IGBTs). For ease of description and understanding, the embodiments of this application use MOSFETs as an example for illustration. Furthermore, the power transistor can be fabricated using materials such as gallium nitride, silicon carbide, or silicon.

[0049] Continue reading Figure 2 The power module 40 also includes a driver 42, which includes two driving parts, namely an upper driving part 421 and a lower driving part 422.

[0050] The upper driving section 421 is connected to the control terminal of the upper power transistor Q1. For example, when the upper power transistor Q1 is a MOSFET, the upper driving section 421 is connected to the gate of the upper power transistor Q1 and is used to provide a driving voltage to the gate of the upper power transistor Q1 to drive the upper power transistor Q1 to turn off or on. Similarly, the lower driving section 422 is connected to the control terminal of the lower power transistor Q2 and is used to provide a driving voltage to the control terminal of the lower power transistor Q2 to drive the lower power transistor Q2 to turn on or off.

[0051] Furthermore, the circuit containing the upper drive section 421 shares a common ground with the upper power transistor Q1, and the circuit containing the lower drive section 422 shares a common ground with the lower power transistor Q2. In other words, similar to the upper power transistor Q1 and the lower power transistor Q2, the ground terminals of the circuit containing the upper drive section 421 and the lower drive section 422 are not connected together, and the two drive sections are isolated from each other. This allows the two drive sections to independently control the two power transistors without affecting each other.

[0052] The following section will take the upper drive section 421 in the driver 42 as an example to introduce the relevant structure of the upper drive section 421.

[0053] In some embodiments, see Figure 2 The power module 40 also includes a first power supply 43, and the upper drive section 421 includes a power input terminal VB and a drive signal input terminal HI. One end of the first power supply 43 is connected to the power input terminal VB, and the other end is grounded. The first power supply 43 supplies power to the upper drive section 421 through the power input terminal VB to ensure the normal operation of the upper drive section 421.

[0054] In addition, the drive signal input terminal HI is used to receive high-level signals or low-level signals, such as high-level signals or low-level signals sent by the digital signal processor in the power module 40. A high-level signal is used to indicate that the upper drive section 421 drives the upper power transistor Q1 to turn on, and a low-level signal is used to indicate that the upper drive section 421 drives the upper power transistor Q1 to turn off.

[0055] In some embodiments, see Figure 2 The power module 40 also includes a first resistor R1 and a second resistor R2 connected in series, and the upper drive section 421 also includes a high-voltage signal transmission terminal HVDD. The high-voltage signal transmission terminal HVDD is connected to one end of the first power supply 43 through the power input terminal VB, and the high-voltage signal transmission terminal HVDD is also grounded through the first resistor R1 and the second resistor R2 connected in series.

[0056] Based on the above design, when the drive signal input terminal HI receives a high-level signal, the first power supply 43 can supply power to the high-voltage signal transmission terminal HVDD through the power input terminal VB, so that a ground loop is formed between the first power supply 43, the high-voltage signal transmission terminal HVDD, the first resistor R1, and the first resistor R2. In this ground loop, the voltage U of the high-voltage signal transmission terminal HVDD... H上 Used to drive the power transistor Q1 to conduct. That is, voltage U H上 This is the driving voltage used to turn on the power transistor Q1.

[0057] In practical implementation, the high-voltage signal transmission terminal HVDD can directly transmit a signal indicating its own voltage to the control terminal of the upper power transistor Q1 to drive Q1 to conduct. Alternatively, the high-voltage signal transmission terminal HVDD can also transmit a signal indicating its own voltage to the control terminal of the upper power transistor Q1 through other connection terminals provided in the upper drive section 421.

[0058] In some embodiments, see further reference. Figure 2 The upper drive section 421 also includes a voltage output terminal HVFB. The voltage output terminal HVFB is connected to connection point a between the first resistor R1 and the first resistor R2, and is used to output voltage to connection point a. In a specific implementation, the voltage output terminal HVFB can receive the voltage output from the first power supply 43 through the power input terminal VB, and output the received voltage to connection point a.

[0059] Based on the above design, when the drive signal input terminal HI receives a high-level signal and the first power supply 43 forms a grounding loop through the power input terminal VB, the high-voltage signal transmission terminal HVDD, the first resistor R1, and the first resistor R2, the voltage output terminal HVFB can output voltage to the connection point a in the grounding loop.

[0060] For example, when the voltage output terminal HVFB outputs voltage U1 to connection point a, due to the voltage division caused by the series connection of the first resistor R1 and the first resistor R2, the voltage U at the high voltage signal transmission terminal HVDD in this grounding loop is... H上 =U1(R1+R2) / R2. Thus, in practical applications, by adjusting the voltage U1 output from the voltage output terminal HVFB, and at least one of the resistance ratios of the first resistors R1 and R2, the voltage U at the high-voltage signal transmission terminal HVDD can be flexibly adjusted. H上 This means that the drive voltage supplied by the upper drive section 421 to the control terminal of the upper power transistor Q1 can be flexibly adjusted. Furthermore, the drive voltage provided by the upper drive section 421 to the upper power transistor Q1 can meet the conduction requirements of the upper power transistor Q1. Moreover, the method of adjusting the drive voltage provided by the upper drive section 421 to the upper power transistor Q1 is simple and easy to implement with flexible control.

[0061] In some embodiments, see Figure 2 The upper driving section 421 also includes a high-voltage signal output terminal HOUTH and a first switching circuit (not shown in the figure). The high-voltage signal output terminal HOUTH is connected to the high-voltage signal transmission terminal HVDD via the first switching circuit. The first switching circuit is used to connect the circuit between the high-voltage signal transmission terminal HVDD and the high-voltage signal output terminal HOUTH when the driving signal input terminal HI receives a high-level signal. The first switching circuit is also used to disconnect the circuit between the high-voltage signal transmission terminal HVDD and the high-voltage signal output terminal HOUTH when the driving signal input terminal HI receives a low-level signal.

[0062] In addition, the high voltage signal output terminal HOUTH is also connected to the control terminal of the power transistor Q1, and the high voltage signal output terminal HOUTH is used to send the voltage U of the high voltage signal transmission terminal HVDD to the control terminal of the power transistor Q1. H The signal.

[0063] Based on the above design, when the upper driving section 421 confirms the need to drive the upper power transistor Q1 to conduct based on the received high-level signal, the upper driving box section 421 can conduct the circuit between the high-voltage signal transmission terminal HVDD and the high-voltage signal output terminal HOUTH through the first switching circuit. Furthermore, the voltage U of the high-voltage signal transmission terminal HVDD... H上 The high-voltage signal output terminal HOUTH can be sent to the control terminal of the upper power transistor Q1, thereby driving the upper power transistor Q1 to conduct.

[0064] When the upper driving section 421 confirms that it needs to drive the upper power transistor Q1 to turn off based on the received low-level signal, the upper driving section 421 can disconnect the circuit between the high-voltage signal transmission terminal HVDD and the high-voltage signal output terminal HOUTH through the first switching circuit. Furthermore, the circuit between the high-voltage signal transmission terminal HVDD and the control terminal of the upper power transistor Q1 can be disconnected, ensuring that the process of the upper driving section 421 driving the upper power transistor Q1 to turn off is not affected by the voltage of the high-voltage signal transmission terminal HVDD.

[0065] Furthermore, by connecting the high-voltage signal transmission terminal HVDD to the control terminal of the power transistor Q1 via the first switching circuit in the upper drive section 421 and the high-voltage signal output terminal HOUTH, the driver 42 can easily control the on / off state of the circuit between the high-voltage signal transmission terminal HVDD and the control terminal of the power transistor Q1. Compared to connecting the high-voltage signal transmission terminal HVDD to the control terminal of the power transistor Q1 via a switching circuit located outside the driver 42, this reduces the complexity of the circuit design and control logic in the power module 40.

[0066] In some embodiments, see Figure 2 To drive the upper power transistor Q1 to disconnect, the upper drive section 421 also includes a low-voltage signal transmission terminal HVEE, a low-voltage signal output terminal HOUTL, and a second switching circuit (not shown in the figure). The low-voltage signal transmission terminal HVEE is connected to one end of the first power supply 43 via the power input terminal VB. The low-voltage signal transmission terminal HVEE is also connected to the low-voltage signal output terminal HOUTL via the second switching circuit. The low-voltage signal output terminal HOUTL is connected to the control terminal of the upper power transistor Q1.

[0067] The second switching circuit is used to turn on the circuit between the low-voltage signal transmission terminal HVEE and the low-voltage signal output terminal HOUTL when a low-level signal is received at the drive signal input terminal HI. The second switching circuit is also used to turn off the circuit between the low-voltage signal transmission terminal HVEE and the low-voltage signal output terminal HOUTL when a high-level signal is received at the drive signal input terminal HI. The low-voltage signal output terminal HOUTL is used to send a voltage U to the control terminal of the upper power transistor Q1 to indicate the voltage U of the low-voltage signal transmission terminal HVEE. L上 The signal, the voltage U at the low voltage signal transmission terminal HVEE. L上 Used to drive the power transistor Q1 to disconnect.

[0068] Based on the above design, when a low-level signal is received at the drive signal input terminal HI, the first power supply 43 can output voltage to the low-voltage signal transmission terminal HVEE through the power input terminal VB. Simultaneously, the second switching circuit can connect the circuit between the low-voltage signal transmission terminal HVEE and the low-voltage signal output terminal HOUTL. Thus, the voltage U at the low-voltage signal transmission terminal HVEE... L上 The low-voltage signal output terminal HOUTL can be sent to the control terminal of the upper power transistor Q1, thereby driving the upper power transistor Q1 to turn off.

[0069] When a high-level signal is received at the drive signal input terminal HI, the second switching circuit can disconnect the circuit between the low-voltage signal transmission terminal HVEE and the low-voltage signal output terminal HOUTL. This disconnects the circuit between the low-voltage signal transmission terminal HVEE and the control terminal of the upper power transistor Q1, ensuring that the process of the upper drive section 421 driving the upper power transistor Q1 to conduct is not affected by the voltage at the low-voltage signal transmission terminal HVEE.

[0070] In some embodiments, see Figure 2 The power module 40 also includes multiple capacitors, such as capacitors C1, C2, and C3. The drive signal input terminal HI receives a high-level or low-level signal through one end of capacitor C1, while the other end of capacitor C1 is grounded. Furthermore, the high-voltage signal transmission terminal HVDD is connected to a series resistor R1 and a first resistor R2 through one end of capacitor C2, while the other end of capacitor C2 is grounded. The low-voltage signal transmission terminal HVEE is grounded through capacitor C3.

[0071] Based on the above design, the grounded capacitors C1, C2, and C3 can be used to filter and maintain loop stability, thereby improving the reliability of the power module 40.

[0072] In some embodiments, see Figure 2 The power module 40 also includes multiple second resistors, including second resistor R3, second resistor R4, and second resistor R5. The drive signal input terminal HI is connected to one end of the second resistor R3 via one end of capacitor C1. The other end of the second resistor R3 is used to receive high-level or low-level signals. In this way, impedance matching is achieved through the second resistor R3, reducing signal reflection and interference, thereby improving the transmission quality and stability of the high-level and low-level signals received at the drive signal input terminal HI.

[0073] Furthermore, the high-voltage signal output terminal HOUTH is connected to the control terminal of the power transistor Q1 via a second resistor R4, and the low-voltage signal output terminal HOUTL is connected to the control terminal of the power transistor Q1 via a second resistor R5. In this way, the speed at which the high-voltage signal output terminal HOUTH and the low-voltage signal output terminal HOUTL provide the drive voltage to the control terminal of the power transistor Q1 can be adjusted via the second resistors R4 and R5, ensuring stable operation of the upper drive section 421 in driving the power transistor Q1 to turn on or off.

[0074] In some embodiments, see Figure 2 The power module 40 also includes a first magnetic device 44, which may be a magnetic device such as an inductor, a magnetic bead, or a magnetic ring. The high-voltage signal output terminal HOUTH is connected to the control terminal of the upper power transistor Q1 via the first magnetic device 44, and the length of the transmission wire between the first magnetic device 44 and the control terminal of the upper power transistor Q1 is less than the length of the transmission wire between the first magnetic device 44 and the high-voltage signal output terminal HOUTH.

[0075] It should be understood that, in specific implementation, such as Figure 2 As shown, the high voltage signal output terminal HOUTH can be connected to the low voltage signal output terminal HOUTL, and together they are connected to the control terminal of the power transistor Q1 through the first magnetic device 44.

[0076] Based on the above design, the first magnetic device 44, which is connected between the driver 42 and the half-bridge circuit 41, can be positioned closer to the upper power transistor Q1 in the half-bridge circuit 41. In this way, the first magnetic device 44 can better suppress the driving oscillation of the upper power transistor Q1.

[0077] The above describes the structure between the upper drive section 421 and the upper power transistor Q1 in the driver 42. The following describes the structure between the lower drive section 422 and the lower power transistor Q2 in the driver 42.

[0078] In some embodiments, see Figure 2 The power module 40 also includes a second power supply 45. The lower drive section 422 includes a power input terminal VCC and a drive signal input terminal L1. One end of the second power supply 45 is connected to the power input terminal VCC, and the other end of the second power supply 45 is grounded. The second power supply 45 supplies power to the lower drive section 422 through the power input terminal VCC. The drive signal input terminal L1 is used to receive a high-level signal or a low-level signal. A high-level signal is used to indicate that the lower drive section 422 drives the lower power transistor Q2 to turn on, and a low-level signal is used to indicate that the lower drive section 422 drives the lower power transistor Q2 to turn off.

[0079] It should be understood that in the embodiments of this application, the second power supply 45 and the first power supply 43 may be the same power supply or they may be different power supplies.

[0080] In some embodiments, see Figure 2 The power module 40 also includes a first resistor R6 and a first resistor R7 connected in series, and a third switching circuit (not shown in the figure). The lower drive section 422 also includes a high voltage signal transmission terminal LVDD, a high voltage signal output terminal LOUTH, and a voltage output terminal LVFB.

[0081] The high-voltage signal transmission terminal LVDD is connected to one end of the second power supply 45 via the power input terminal VCC. LVDD is also grounded via a series connection of first resistors R6 and R7. The voltage output terminal LVFB is connected to the connection point b between the first resistors R6 and R7. The high-voltage signal output terminal LOUTH is connected to LVDD via a third switching circuit and is also connected to the control terminal of the lower power transistor Q2.

[0082] Based on the above design, when the drive signal input terminal LI receives a high-level signal, the second power supply 45 can form a ground loop through the power input terminal VCC, the high-voltage signal transmission terminal LVDD, the first resistor R6, and the first resistor R7. The third switching circuit can turn on the circuit between the high-voltage signal transmission terminal LVDD and the high-voltage signal output terminal LOUTH, and the voltage output terminal LVFB can output voltage U2 to the connection point b in the ground loop. In this case, the voltage U of the high-voltage signal transmission terminal LVDD... H下 =U2(R6+R7) / R7, and the voltage U of the high-voltage signal transmission terminal LVDD. H下 The high-voltage signal output terminal LOUTH can be sent to the control terminal of the lower power transistor Q2 to drive the lower power transistor Q2 to conduct.

[0083] It should be understood that the structure of the lower drive section 422 driving the lower power transistor Q2 to conduct is similar to the structure of the upper drive section 421 driving the upper power transistor Q1 to conduct. For a detailed description, please refer to the above description of the upper drive section 421, which will not be repeated here.

[0084] In some embodiments, see Figure 2 The lower drive section 422 also includes a low voltage signal transmission terminal LVEE, a low voltage signal output terminal LOUTL, and a fourth switching circuit (not shown in the figure). The low voltage signal transmission terminal LVEE is connected to one end of the second power supply 45 through the power input terminal VCC. The low voltage signal transmission terminal LVEE is also connected to the low voltage signal output terminal LOUTL through the fourth switching circuit. The low voltage signal output terminal LOUTL is connected to the control terminal of the lower power transistor Q1.

[0085] Based on the above design, when a low-level signal is received at the drive signal input terminal LI, the second power supply 45 can output voltage to the low-voltage signal transmission terminal LVEE through the power input terminal VCC. Simultaneously, the fourth switching circuit can connect the circuit between the low-voltage signal transmission terminal LVEE and the low-voltage signal output terminal LOUTL. Consequently, the voltage U at the low-voltage signal transmission terminal LVEE... L下 The low-voltage signal output terminal LOUTL can be sent to the control terminal of the lower power transistor Q2, thereby driving the lower power transistor Q2 to turn off.

[0086] It should be understood that the structure of the lower drive section 422 driving the lower power transistor Q2 to disconnect is similar to the structure of the upper drive section 421 driving the upper power transistor Q1 to disconnect. For a detailed description, please refer to the above description of the upper drive section 421, which will not be repeated here.

[0087] In some embodiments, see Figure 2 The power module 40 includes, for example, grounded capacitors C4, C5, and C6, and the power module 40 includes, for example, second resistors R8, R9, and R10.

[0088] Specifically, the drive signal input terminal LI is connected to the second resistor R8 through one end of capacitor C4; the high voltage signal transmission terminal LVDD is connected to the first resistors R6 and R7 in series through one end of capacitor C5; and the low voltage signal transmission terminal LVEE is grounded through capacitor C6. Furthermore, the high voltage signal output terminal LOUTH and the low voltage signal output terminal LOUTL are connected to the control terminal of the lower power transistor Q2 through the second resistors R9 and R10, respectively. For a detailed description, please refer to the above description of the capacitors C1-C3 and the second resistors R3-R5 connected to the upper drive section 421; these details will not be repeated here.

[0089] In some embodiments, see Figure 2 The power module 40 also includes a second magnetic device 46. The high-voltage signal output terminal LOUTH is connected to the control terminal of the lower power transistor Q2 through the second magnetic device 46, and the length of the transmission wire between the second magnetic device 46 and the control terminal of the lower power transistor Q2 is less than the length of the transmission wire between the second magnetic device 46 and the high-voltage signal output terminal LOUTH. In this way, the second magnetic device 46, which is connected between the driver 42 and the half-bridge circuit 41, can be placed closer to the lower power transistor Q2, thereby better suppressing the drive oscillation of the lower power transistor Q2 through the second magnetic device 46.

[0090] For a detailed description of the second magnetic device 46, please refer to the relevant description of the first magnetic device 44 mentioned above, which will not be repeated here.

[0091] In some embodiments, see further reference. Figure 2 At least one of the upper drive portion 421 and the lower drive portion 422 further includes a load end. For example, Figure 2 An exemplary embodiment shows that the lower drive section 422 also includes a load terminal LDO5. The load terminal LDO5 is grounded via the load 47 in the power module 40. Furthermore, the load terminal LDO5 receives the voltage output from the second power supply 45 through the power input terminal VCC in the lower drive section 422 and supplies the received voltage to the load 47 to power the load 47. The voltage supplied by the load terminal LDO5 to the load 47 can be, for example, 5V.

[0092] It should be understood that in the embodiments of this application, the load 47 may be an electrical device located outside the driver 42 in the power module 40, such as a digital signal processor located near the driver 42 in the power module 40.

[0093] Based on the above design, the driver 42 can act as a power source and supply power to the load 47 near the driver 42 through its own load terminal. This not only facilitates powering the load 47 but also improves the utilization rate of the driver 42.

[0094] In some embodiments, see further reference. Figure 2 The power module 40 also includes capacitor C7. Capacitor C7 is connected in parallel with the load 47, and the load terminal LDO5 is grounded through the parallel capacitor C7 and the load 47. This allows for filtering via capacitor C7, ensuring reliable power supply from the load terminal LDO5 to the load 47.

[0095] It should be understood that Figure 2 The illustrated embodiment uses a half-bridge circuit 41 comprising a set of two power transistors connected in series, specifically an upper power transistor Q1 and a lower power transistor Q2 connected in series, to illustrate the structure of the driver 42 driving the half-bridge circuit 41. In other embodiments, the half-bridge circuit 41 may also include multiple sets of two power transistors connected in series, with these multiple sets of two power transistors connected in parallel, and multiple connection points formed between the two power transistors in these multiple sets of two power transistors connected together. In this case, the driver 42 drives each set of two power transistors in a manner similar to... Figure 2 The driver 42 shown drives the series-connected upper power transistor Q1 and lower power transistor Q2 in the same way.

[0096] The following description uses the example of driver 42 driving two sets of power transistors connected in series in half-bridge circuit 41.

[0097] Figure 3 and Figure 4These are schematic diagrams of another power module 40 provided in the embodiments of this application.

[0098] In some embodiments, combined with Figure 3 and Figure 4 The half-bridge circuit 41 includes two sets of power transistors connected in series. That is, in addition to the series-connected upper power transistor Q1 and lower power transistor Q2, the half-bridge circuit 41 also includes the series-connected upper power transistor Q3 and lower power transistor Q4. For ease of description, the series-connected upper power transistor Q1 and lower power transistor Q2 are referred to as power transistor group 41a, and the series-connected upper power transistor Q3 and lower power transistor Q4 are referred to as power transistor group 41b.

[0099] In this configuration, power transistor groups 41a and 41b are connected in parallel, and the connection points between the upper power transistor Q1 and the lower power transistor Q2, and between the upper power transistor Q3 and the lower power transistor Q4, are connected together. That is, the sources of the upper power transistor Q1 and the upper power transistor Q3 are connected to the same reference ground, and the sources of the lower power transistor Q2 and the lower power transistor Q4 are connected to the same reference ground.

[0100] Furthermore, the high-voltage signal output terminal HOUTH and the low-voltage signal output terminal HOUTL in the upper drive section 421 can be connected to the control terminals of the upper power transistor Q1 and the upper power transistor Q3 to drive the upper power transistors Q1 and Q3 to turn on or off. The high-voltage signal output terminal LOUTH and the low-voltage signal output terminal LOUTL in the lower drive section 422 can be connected to the control terminals of the lower power transistors Q2 and Q4 to drive the lower power transistors Q2 and Q4 to turn on or off.

[0101] It should be understood that, in specific implementations, the upper drive section 421 drives the upper power transistor Q3 to turn on or off in the same way as it drives the upper power transistor Q1, and the lower drive section 422 drives the lower power transistor Q4 to turn on or off in the same way it drives the lower power transistor Q2. For a detailed description, please refer to [link to relevant documentation]. Figure 2 The relevant descriptions of the embodiments shown will not be repeated here.

[0102] In some embodiments, see Figure 3 When the half-bridge circuit 41 includes multiple sets of two power transistors connected in series, the number of first magnetic devices 44 can be one. The high-voltage signal output terminal HOUTH in the upper drive section 421 can be connected to the control terminal of the upper power transistor in each set of two power transistors connected in series via this one first magnetic device 44.

[0103] For example, such as Figure 3As shown, when the half-bridge circuit 41 includes power transistor group 41a and power transistor group 41b, the power supply module 40 includes a first magnetic device 44, i.e., it includes the first magnetic device 44a. The high-voltage signal output terminal HOUTH can be connected to the low-voltage signal output terminal HOUTL, and then connected to the control terminal of the upper power transistor Q1 in power transistor group 41a and the control terminal of the upper power transistor Q3 in power transistor group 41b via the first magnetic device 44a. Furthermore, the length of the transmission wire between the first magnetic device 44a and the control terminal of the upper power transistor Q1, and the length of the transmission wire between the first magnetic device 44a and the control terminal of the upper power transistor Q3, are both less than the length of the transmission wire between the first magnetic device 44a and the high-voltage signal output terminal HOUTH.

[0104] Based on the above design, the high-voltage signal output terminal HOUTH can be connected to the upper power transistor of each group of two power transistors connected in series in the half-bridge circuit 41 via a first magnetic device 44, and this first magnetic device 44 is positioned closer to the upper power transistor of each group of two power transistors connected in series. In this way, the first magnetic device 44 can not only better suppress the drive oscillation of the upper power transistor in each group of two power transistors connected in series, but also suppress oscillation crosstalk generated between multiple groups of two power transistors connected in parallel. Furthermore, this also reduces the number of first magnetic devices 44 used in the power module 40, thereby facilitating cost optimization of the power module 40.

[0105] In other embodiments, see Figure 4 When the half-bridge circuit 41 includes multiple sets of two power transistors connected in series, the number of first magnetic devices 44 can be multiple. Specifically, the high-voltage signal output terminal HOUTH in the upper drive section 421 can be connected to the control terminal of the upper power transistor in one set of two power transistors connected in series through one of the first magnetic devices 44. That is, multiple first magnetic devices correspond one-to-one with multiple sets of two power transistors connected in series, and the high-voltage signal output terminal HOUTH is connected to the control terminal of the upper power transistor in its corresponding set of two power transistors connected in series through each first magnetic device 44.

[0106] For example, such as Figure 4 As shown, when the half-bridge circuit 41 includes power transistor group 41a and power transistor group 41b, the power supply module 40 may include two first magnetic devices 44, namely, first magnetic device 44a and first magnetic device 44b. The high-voltage signal output terminal HOUTH can be connected to the low-voltage signal output terminal HOUTL, and then connected to the control terminal of the upper power transistor Q1 in power transistor group 41a via the first magnetic device 44a. Furthermore, the length of the transmission wire between the first magnetic device 44a and the control terminal of the upper power transistor Q1 is less than the length of the transmission wire between the first magnetic device 44a and the high-voltage signal output terminal HOUTH.

[0107] Similarly, the high voltage signal output terminal HOUTH can also be connected to the low voltage signal output terminal HOUTL and then connected to the control terminal of the upper power transistor Q3 in the power transistor group 41b through the first magnetic device 44b. The length of the transmission wire between the first magnetic device 44b and the control terminal of the upper power transistor Q3 is less than the length of the transmission wire between the first magnetic device 44b and the high voltage signal transmission wire HOUTH.

[0108] Based on the above design, the high-voltage signal output terminal HOUTH can be connected to the upper power transistors of multiple sets of two series-connected power transistors via multiple first magnetic devices 44, with each first magnetic device 44 positioned closer to its connected upper power transistor. This multiple first magnetic devices 44 not only better suppress the drive oscillation of the upper power transistor in each set of two series-connected power transistors, but also suppress oscillation crosstalk generated between multiple sets of two series-connected power transistors in parallel. Furthermore, since the upper power transistors in each set of two series-connected power transistors are connected to different first magnetic devices 44, it prevents the failure of one first magnetic device 44 from affecting the normal operation of the other first magnetic devices 44.

[0109] In some embodiments, see Figure 3 When the half-bridge circuit 41 includes multiple sets of two power transistors connected in series, similar to the power module 40 including a first magnetic device 44, the power module 40 may also include a second magnetic device 46, such as a second magnetic device 46a. In this way, the high-voltage signal output terminal LOUTH in the lower drive section 422 can be connected to the control terminal of the lower power transistor in each set of two power transistors connected in series in the power module 40 via the second magnetic device 46a. For a detailed description, please refer to the above. Figure 3 The relevant description of the first magnetic device 44a shown will not be repeated here.

[0110] In other embodiments, see Figure 4 When the half-bridge circuit 41 includes multiple sets of two power transistors connected in series, similar to the power supply module 40 including multiple first magnetic devices 44, the power supply module 40 may also include multiple second magnetic devices 46. The high-voltage signal output terminal LOUTH can be connected to the control terminal of the lower power transistor in a set of two power transistors connected in series through a second magnetic device 46. For example, as Figure 4 As shown, the power module includes a second magnetic device 46a and a second magnetic device 46b. The high-voltage signal output terminal LOUTH is connected to the control terminal of the lower power transistor Q2 in the power transistor group 41a through the second magnetic device 46a. The high-voltage signal output terminal LOUTH is also connected to the control terminal of the lower power transistor Q4 in the power transistor group 41b through the second magnetic device 46b. For a detailed description, please refer to the above. Figure 4 The relevant descriptions of the first magnetic device 44a and the first magnetic device 44b shown are as follows.

[0111] It should be understood that in the power module 40 provided in this application embodiment, the number of half-bridge circuits 41 and drivers 42 can each be one or more. These one or more half-bridge circuits 41 constitute the power conversion circuit in the power module 40. For a detailed description of the power conversion circuit, please refer to... Figure 1 The relevant descriptions of the illustrated embodiments will not be repeated here. Furthermore, each of the one or more half-bridge circuits 41 corresponds to one or more drivers 42, with each driver 42 driving a corresponding half-bridge circuit 41.

[0112] This application embodiment also provides a power supply device, which includes a plurality of power modules 40 as described in the above embodiments. The plurality of power modules 40 are connected in parallel and are used to supply power to the load.

[0113] It should be understood that, in the embodiments of this application, the power supply equipment may be, for example, a device used to provide electrical energy in scenarios such as communication base stations, data centers, charging stations, energy storage systems, or photovoltaic systems. For a detailed description, please refer to... Figure 1 The relevant descriptions of the embodiments shown will not be repeated here.

[0114] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A power module, characterized in that, The power module includes a half-bridge circuit and a driver. The half-bridge circuit includes two power transistors connected in series. The two power transistors do not share a common ground. The driver includes two driving sections. One driving section is used to drive one of the power transistors. The circuit in which the driving section is located shares a common ground with the corresponding power transistor. The power module further includes a power supply and two first resistors connected in series. Each driving section includes a power input terminal, a high-voltage signal transmission terminal, and a voltage output terminal. One end of the power supply is connected to the high-voltage signal transmission terminal through the power input terminal, and the other end of the power supply is grounded. The high-voltage signal transmission terminal is also grounded through the two first resistors connected in series. The voltage of the high-voltage signal transmission terminal is used to drive one of the power transistors to conduct. The voltage output terminal is connected to the connection point between the two first resistors connected in series, and the voltage output terminal is used to output voltage to the connection point.

2. The power module according to claim 1, characterized in that, At least one of the drive components further includes a load terminal, which is grounded via a load in the power module; The load terminal is used to receive the voltage output by the power supply through the power input terminal in the drive section where it is located, and to deliver the received voltage to the load.

3. The power module according to claim 1 or 2, characterized in that, Each of the driving sections further includes a high voltage signal output terminal, a first switching circuit, and a driving signal input terminal. The high voltage signal output terminal is connected to the high voltage signal transmission terminal through the first switching circuit, and the high voltage signal output terminal is also connected to the control terminal of one of the power transistors. The high-voltage signal output terminal is used to send a signal to one of the power transistors to indicate the voltage of the high-voltage signal transmission terminal; The first switching circuit is used for: When a high-level signal is received at the drive signal input terminal, the circuit between the high-voltage signal output terminal and the high-voltage signal transmission terminal is turned on. When a low-level signal is received at the drive signal input terminal, the circuit between the high-voltage signal output terminal and the high-voltage signal transmission terminal is disconnected.

4. The power module according to claim 3, characterized in that, The power module also includes a magnetic device, and the high-voltage signal output terminal is connected to the control terminal of one of the power transistors through the magnetic device; The length of the transmission wire between the magnetic device and the control terminal of the power transistor is less than the length of the transmission wire between the magnetic device and the high-voltage signal output terminal.

5. The power module according to claim 4, characterized in that, The half-bridge circuit includes multiple sets of two power transistors connected in series, the multiple sets of two power transistors connected in parallel, and multiple connection points formed between the two power transistors in the multiple sets of two power transistors connected in series. The number of magnetic devices is one, and the high voltage signal output terminal is connected to the control terminal of one of the two power transistors in each group through one of the magnetic devices; The length of the transmission line between the magnetic device and each of the control terminals connected thereto is less than the length of the transmission line between the magnetic device and the high-voltage signal output terminal.

6. The power module according to claim 4, characterized in that, The half-bridge circuit includes multiple sets of two power transistors connected in series, the multiple sets of two power transistors connected in parallel, and multiple connection points formed between the two power transistors in the multiple sets of two power transistors connected in series. The number of magnetic devices is multiple, and the high voltage signal output terminal is connected to the control terminal of one of the power transistors in a group of power transistors through one of the magnetic devices; The length of the transmission line between the magnetic device and the control terminal it is connected to is less than the length of the transmission line between the magnetic device and the high-voltage signal output terminal.

7. The power module according to any one of claims 3 to 6, characterized in that, Each of the driving components further includes a low-voltage signal output terminal, a low-voltage signal transmission terminal, and a second switching circuit; wherein... The low voltage signal transmission terminal is connected to one end of the power supply through the power input terminal. The low voltage signal transmission terminal is also connected to the low voltage signal output terminal through the second switching circuit. The low voltage signal output terminal is connected to the control terminal of one of the power transistors. The low voltage signal output terminal is used to send a signal to the power transistor to indicate the voltage of the low voltage signal transmission terminal, and the voltage of the low voltage signal transmission terminal is used to drive the power transistor to disconnect. The second switching circuit is used for: When a low-level signal is received at the drive signal input terminal, the circuit between the low-voltage signal transmission terminal and the low-voltage signal output terminal is turned on. When a high-level signal is received at the drive signal input terminal, the circuit between the low-voltage signal transmission terminal and the low-voltage signal output terminal is disconnected.

8. The power module according to claim 7, characterized in that, The power module also includes multiple capacitors, wherein, The high-voltage signal transmission terminal is connected to the two first resistors in series through one end of a capacitor, and the other end of the capacitor is grounded. The low-voltage signal transmission terminal is grounded through another capacitor.

9. The power module according to claim 7 or 8, characterized in that, The power module also includes multiple second resistors, and the high voltage signal output terminal and the low voltage signal output terminal are respectively connected to the control terminal of the power transistor through one of the second resistors.

10. A power supply device, characterized in that, The power supply equipment includes a plurality of power modules as described in any one of claims 1 to 9, the plurality of power modules being connected in parallel, and the plurality of power modules being used to supply power to the load.

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