High-multiplication load igbt-thyristor hybrid module and multi-objective optimization control method thereof
Patent Information
- Application Number
- CN202611256859.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-08-19
- Publication Date
- 2026-09-22
AI Technical Summary
晶闸管凭借其低导通压降和高浪涌电流承受能力，在高倍载工况下具有显著优势，但其半控特性导致无法通过门极信号实现自主关断，给其在需要频繁换流的逆变拓扑中的应用带来困难
高效节能与高可靠性融合：充分发挥了晶闸管导通损耗低、浪涌能力强的优势，同时利用IGBT的全控特性解决了小电流工况下的可靠换相问题，实现了高倍载下系统效率与运行可靠性的统一。
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Figure CN122801746A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of power electronics technology, and more specifically, relates to a high-load IGBT-thyristor hybrid module and its multi-objective optimization control method. Background Technology
[0002] In high-load, short-time overcurrent applications, such as power system fault current limiting, high-power pulse power supplies, and special welding power supplies, the conduction loss and current withstand capability of power semiconductor devices become key factors restricting system reliability. Thyristors, with their low on-state voltage drop and high surge current withstand capability, have significant advantages under high-load conditions. However, their semi-controlled characteristics prevent autonomous turn-off via gate signals, hindering their application in inverter topologies requiring frequent commutation.
[0003] Existing solutions to the thyristor turn-off problem mainly fall into two categories: one is to use traditional forced commutation circuits, which create a current zero-crossing condition by connecting an inductor and a capacitor in series in the commutation circuit. This type of solution usually has a complex turn-off circuit structure, large size, high additional losses, and is difficult to adapt to the flexible turn-off requirements under different operating conditions. The other type is to use fully controlled devices such as IGBTs to replace thyristors. However, IGBTs are limited by a large on-saturation voltage drop, and the conduction losses increase sharply under high load and high current. If the selection is based on short-time overcurrent conditions, the cost will increase significantly, which is not conducive to economical design. Summary of the Invention
[0004] To address the shortcomings of existing technologies, this invention proposes a high-load topology based on IGBTs and fully controlled thyristor submodules. Its innovation lies in the deep integration of the main thyristors and IGBTs in a parallel, co-directional configuration, and the provision of an independent resonant turn-off unit for each main thyristor, comprising an auxiliary thyristor and a feedback diode. Furthermore, a hierarchical control strategy based on load current amplitude thresholds is introduced: under high current conditions, the low on-state voltage drop of the thyristors is utilized to handle the main current, and soft turn-off is achieved through a resonant circuit; near the zero-crossing point of low current, automatic switching to the IGBT completes precise commutation, fundamentally avoiding uncontrolled self-turn-off of the thyristors due to difficulty in maintaining low current.
[0005] The present invention adopts the following technical solution.
[0006] The first aspect of this invention proposes a high-load IGBT-thyristor hybrid module, wherein the hybrid module is an H-bridge structure composed of four bridge arm modules, specifically: The four bridge arm modules are designated as the first bridge arm module, the second bridge arm module, the third bridge arm module, and the fourth bridge arm module; each bridge arm module includes an IGBT, a diode, a main thyristor, and a resonant turn-off unit. The collector of the IGBT is connected to the anode of the main thyristor, and the emitter of the IGBT is connected to the cathode of the main thyristor. The resonant turn-off unit includes four auxiliary thyristors, a turn-off capacitor, a resonant inductor, and a feedback diode; the main thyristor and the resonant turn-off unit together form a fully controlled thyristor submodule. The four auxiliary thyristors are designated as the first auxiliary thyristor, the second auxiliary thyristor, the third auxiliary thyristor, and the fourth auxiliary thyristor. The four auxiliary thyristors form an H-bridge structure, and the turn-off capacitor is connected to the two AC terminals of the H-bridge structure to form an auxiliary unit. The cathode of the main thyristor is connected to the anode of the resonant inductor and one end of the resonant inductor. The anode of the main thyristor is connected to the cathode of the resonant inductor and the positive DC terminal of the auxiliary unit. The other end of the resonant inductor is connected to the negative DC terminal of the auxiliary unit.
[0007] A second aspect of the present invention proposes a multi-objective optimization control method for a high-load IGBT-thyristor hybrid module, applied to the high-load IGBT-thyristor hybrid module as described in the first aspect of the present invention, comprising: Two complementary PWM signals are generated to control the high-load IGBT-thyristor hybrid module. One PWM signal is used to control the first bridge arm module and the fourth bridge arm module, and the other PWM signal is used to control the second bridge arm module and the third bridge arm module. The initial threshold current is calculated based on the peak load current, the fundamental frequency, and the corresponding carrier frequency. Based on the relationship between threshold current and IGBT cost, total system loss and power quality, cost sub-objective functions, loss sub-objective functions and power quality sub-objective functions are constructed; the weighted sum of the IGBT cost sub-objective functions, loss sub-objective functions and power quality sub-objective functions is used as the objective function of the comprehensive optimization model; The initial threshold current is used as the initial value for iteration, and the optimal threshold current is calculated through a comprehensive optimization model. Determine whether the current load current exceeds the optimal threshold current; if so, control the main thyristor and auxiliary thyristor of the corresponding bridge arm module by combining the voltage direction of the turn-off capacitor and the two PWM signals; otherwise, control the IGBT of the corresponding bridge arm module with the two PWM signals.
[0008] Preferably, the initial threshold current is calculated based on the peak load current, the fundamental frequency, and the corresponding carrier frequency, specifically as follows: Will Multiply by the fundamental frequency, then divide by the corresponding carrier frequency, substitute the division result into the sin function, and then multiply by the peak load current to obtain the initial threshold current.
[0009] Preferably, the sub-objective function is constructed as follows: Multiplying the threshold current by the ratio of chip area to current capacity yields the chip area required for the IGBT corresponding to the threshold current. Multiplying the required chip area for the IGBT by the chip area unit cost factor, and adding the multiplier result to the set fixed cost, yields the IGBT cost associated with the threshold current. Normalizing the IGBT cost associated with the threshold current yields the cost sub-objective function.
[0010] Preferably, the loss sub-objective function is constructed as follows: The total system loss is the sum of IGBT conduction loss, main thyristor conduction loss, IGBT switching loss and main thyristor switching loss; For the conduction loss of the device, which includes IGBT and main thyristor, the conduction loss of the device is obtained by adding the product of the device's conduction threshold voltage and the average current of the device, plus the product of the device's on-state equivalent internal resistance and the square of the effective value of the device's current. The energy consumption of a single IGBT switch is obtained by multiplying the square of the threshold current by the first switching loss fitting coefficient, the product of the threshold current and the second switching loss fitting coefficient, and the third switching loss fitting coefficient. The IGBT switching loss is obtained by multiplying the equivalent switching frequency of the IGBT in the current zero-crossing region by the energy consumption of a single IGBT switch. The turn-on energy consumption of the main thyristor is obtained by multiplying the square of the threshold current by the first turn-on loss fitting coefficient, adding the product of the threshold current and the second turn-on loss fitting coefficient, and adding the third turn-on loss fitting coefficient. The main thyristor switching loss is obtained by multiplying the equivalent switching frequency of the main thyristor in the current zero-crossing region by the turn-on energy consumption of the main thyristor. Normalizing the total system loss yields the loss sub-objective function.
[0011] Preferably, the equivalent switching frequencies of the IGBT and the main thyristor in the current zero-crossing region are as follows: Will Subtract twice the partition angle Multiply the result of the subtraction by 2 and then divide by Multiply the result of the division by the set carrier frequency to obtain the equivalent switching frequency of the main thyristor in the current zero-crossing region; Double the partition angle Divide by Multiplying the result of the division by the set carrier frequency yields the equivalent switching frequency of the IGBT in the current zero-crossing region.
[0012] Preferably, the average current of the device and the square of the effective value of the current of the device are as follows: The ratio of the threshold current to the peak load current is used as the normalized threshold coefficient; the normalized threshold coefficient is then substituted into the arcsin function to obtain the partition angle. ; Divide twice the peak load current by Multiply by 1 and The difference is used to obtain the average current of the IGBT; Divide twice the peak load current by Multiply by The average current of the main thyristor is obtained; Square of the peak load current divided by Multiply by and The difference is used to obtain the square of the effective value of the IGBT current; Divide the square of the peak load current by 2, and then subtract the square of the effective value of the IGBT current to obtain the square of the effective value of the main thyristor current.
[0013] Preferably, the power quality sub-objective function is constructed as follows: Power quality is set as the IGBT cycle conduction percentage or total harmonic distortion of the current. When the power quality is set to the IGBT periodic conduction ratio, the power quality sub-objective function is 1 minus the IGBT periodic conduction ratio; the IGBT periodic conduction ratio is equal to 2 times. Divide by ; When power quality is set as total harmonic distortion (THD), the THD corresponding to different threshold currents is obtained through simulation. The THD corresponding to the current threshold current is then normalized and used as the sub-objective function of power quality.
[0014] Preferably, the constraints of the comprehensive optimization model include upper and lower limit constraints, junction temperature constraints, and total harmonic distortion of current constraints. The upper and lower limits are: the lower limit of the threshold current is equal to the minimum holding current and the safety margin current of the system for reliable commutation, and the upper limit of the threshold current is equal to the minimum of the load current peak and the ratio of the IGBT rated current to the device current safety margin coefficient. Junction temperature constraint: The junction temperature corresponding to the threshold current is less than or equal to the maximum allowable junction temperature.
[0015] The total harmonic distortion (THD) constraint is: the THD corresponding to the threshold current is less than or equal to the set THD threshold.
[0016] Preferably, the junction temperature corresponding to the threshold current is specifically: Multiply the total system loss corresponding to the threshold current by the set junction temperature coefficient, then divide by the chip area required for the IGBT corresponding to the threshold current, and add the heat sink temperature to the division result to obtain the junction temperature corresponding to the threshold current.
[0017] Preferably, the main thyristor and auxiliary thyristor of the corresponding bridge arm module are controlled by combining the voltage direction of the turn-off capacitor and the two PWM signals, specifically as follows: When the PWM signal is a rising edge, the PWM signal is delayed by a set time to generate a rising edge trigger signal, which controls the main thyristor of the bridge arm module corresponding to the PWM signal to turn on; when the PWM signal is a falling edge, the PWM signal is used as a falling edge trigger signal, which controls the main thyristor of the bridge arm module corresponding to the PWM signal to turn off. When the main thyristors controlling the first and fourth bridge arm modules are turned off, or the main thyristors controlling the second and third bridge arms are turned on, if the voltage direction of the turn-off capacitor is negative, the first and fourth auxiliary thyristors are turned on; if the voltage direction of the turn-off capacitor is positive, the second and third auxiliary thyristors are turned on. When the main thyristors controlling the second and third bridge arm modules are turned off, or the main thyristors controlling the first and fourth bridge arms are turned on, if the voltage direction of the turn-off capacitor is positive, the first and fourth auxiliary thyristors are turned on; if the voltage direction of the turn-off capacitor is negative, the second and third auxiliary thyristors are turned on. If the voltage at the connection point between the first and second auxiliary thyristors is positive, and the voltage at the connection point between the third and fourth auxiliary thyristors is negative, then the voltage direction of the turn-off capacitor is positive, and vice versa.
[0018] The beneficial effects of the present invention are that, compared with the prior art, it has the following significant advantages: High efficiency and energy saving combined with high reliability: It fully leverages the advantages of low conduction loss and strong surge capability of thyristors, while utilizing the full control characteristics of IGBTs to solve the reliable commutation problem under low current conditions, thus achieving a balance between system efficiency and operational reliability under high loads.
[0019] Low-cost resonant soft turn-off: Each thyristor is equipped with an independent, compact resonant turn-off unit, which not only ensures reliable forced turn-off but also recovers energy by feeding residual energy back to the DC side through feedback diodes. This design avoids the complexity and high losses of traditional forced commutation circuits and eliminates the need for IGBT module selection based on extreme overload redundancy, thus reducing system costs.
[0020] Intelligent adaptive switching control: The proposed hierarchical control strategy and threshold current calculation method can segment the output sinusoidal current according to the carrier frequency, accurately capture the switching point closest to zero, and achieve the optimal balance between maximizing the utilization of the thyristor conduction range and preventing small current self-turn-off.
[0021] Highly modular and scalable: The hybrid conduction architecture of IGBT and thyristor fully controlled submodules proposed in this invention is not limited to a specific circuit form. The hybrid parallel bridge arm unit and resonant turn-off circuit have a clear structure and independent function, and can be used as a standardized power conversion submodule. It can be flexibly extended to different types of power conversion topologies such as three-phase full bridge, multi-level cascaded H-bridge, and modular multilevel converter, providing a unified low-loss and high-reliability solution for various high-load scenarios. Attached Figure Description
[0022] Figure 1 Schematic diagram of a high-load IGBT-thyristor hybrid module; Figure 2 This is a schematic diagram of the switching control between IGBT and main thyristor; Figure 3 This is a schematic diagram for threshold current optimization. Figure 4 A schematic diagram for auxiliary thyristor control; Figure 5 The following is a comparison of the control signals of the IGBT and the entire control module generated during simulation (where Figure (a) shows the PWM signal of the upper bridge arm, Figure (b) shows the switching signals of the main thyristors (T1 and T4) of the first and fourth bridge arm modules, and Figure (c) shows the switching signals of the IGBTs of the first and fourth bridge arm modules). Figure 6 The waveform of the output current in a high-load IGBT-thyristor hybrid module; Figure 7 The waveforms of the capacitor voltage and the turn-off signal are shown in Figure (a) and Figure (b). Detailed Implementation
[0023] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of this invention. The embodiments described in this application are merely some embodiments of this invention, and not all embodiments. Based on the spirit of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this invention.
[0024] The manual uses a single-phase inverter circuit as an example to introduce the high-load IGBT-thyristor hybrid module and multi-objective optimization control method.
[0025] like Figure 1 As shown, Embodiment 1 of the present invention proposes a high-load IGBT-thyristor hybrid module, specifically: The high-load IGBT-thyristor hybrid module is an H-bridge structure composed of four bridge arm modules; The four bridge arm modules are designated as the first bridge arm module, the second bridge arm module, the third bridge arm module, and the fourth bridge arm module; each bridge arm module includes an IGBT, a diode, a main thyristor, and a resonant turn-off unit. The collector of the IGBT is connected to the anode of the main thyristor, and the emitter of the IGBT is connected to the cathode of the main thyristor. The resonant turn-off unit includes four auxiliary thyristors, a turn-off capacitor, a resonant inductor, and a feedback diode; the main thyristor and the resonant turn-off unit together form a fully controlled thyristor submodule. The four auxiliary thyristors are designated as the first auxiliary thyristor, the second auxiliary thyristor, the third auxiliary thyristor, and the fourth auxiliary thyristor. The four auxiliary thyristors form an H-bridge structure, and the turn-off capacitor is connected to the two AC terminals of the H-bridge structure to form an auxiliary unit. The cathode of the main thyristor is connected to the anode of the resonant inductor and one end of the resonant inductor. The anode of the main thyristor is connected to the cathode of the resonant inductor and the positive DC terminal of the auxiliary unit. The other end of the resonant inductor is connected to the negative DC terminal of the auxiliary unit.
[0026] The main thyristors of the first, second, third, and fourth bridge arm modules are T1, T2, T3, and T4, respectively. The modules also include four IGBTs with the same conduction direction as the main thyristors. T1 and T2 are connected in series to form one bridge arm, and T3 and T4 are connected in series to form another bridge arm. Two AC terminals serve as output terminals, connected to the connection points of T1 and T2 and T3 and T4, respectively, for connecting to external circuits.
[0027] Embodiment 2 of the present invention proposes a multi-objective optimization control method for a high-load IGBT-thyristor hybrid module, applied to the high-load IGBT-thyristor hybrid module as described in Embodiment 1 of the present invention, comprising: Two complementary PWM signals are generated to control the high-load IGBT-thyristor hybrid module. One PWM signal is used to control the first bridge arm module and the fourth bridge arm module, and the other PWM signal is used to control the second bridge arm module and the third bridge arm module. The initial threshold current is calculated based on the peak load current, the fundamental frequency, and the corresponding carrier frequency. Based on the relationship between threshold current and IGBT cost, total system loss and power quality, cost sub-objective functions, loss sub-objective functions and power quality sub-objective functions are constructed; the weighted sum of the IGBT cost sub-objective functions, loss sub-objective functions and power quality sub-objective functions is used as the objective function of the comprehensive optimization model; The initial threshold current is used as the initial value for iteration, and the optimal threshold current is calculated through a comprehensive optimization model. like Figure 2 As shown, it determines whether the current load current exceeds the optimal threshold current; if so, it controls the main thyristor and auxiliary thyristor of the corresponding bridge arm module by combining the voltage direction of the turn-off capacitor and the two PWM signals; otherwise, it controls the IGBT of the corresponding bridge arm module with the two PWM signals (the two PWM signals are directly used as the control signals of the IGBT of the corresponding bridge arm module; when they are high, the corresponding IGBT is turned on, and when they are low, the corresponding IGBT is turned off).
[0028] It should be noted that the above multi-objective optimization control method is mainly divided into three layers of control: the upper layer control outputs two complementary PWM waveforms, namely the upper bridge arm PWM waveform and the lower bridge arm PWM waveform. The upper bridge arm PWM is used to control the first bridge arm module and the fourth bridge arm module, and the lower bridge arm PWM is used to control the second bridge arm module and the third bridge arm module. The middle layer control combines the magnitude of the load current and the optimized threshold current to generate the turn-on and turn-off signals of the IGBT and the main thyristor. The lower layer control targets the thyristor full control sub-module and generates the trigger signal of the auxiliary thyristor by combining the direction of the turn-off capacitor and whether there is current in the corresponding main thyristor.
[0029] Specifically, such as Figure 3 As shown, the peak load current needs to be considered when setting the threshold current. The frequency of the fundamental wave and the corresponding carrier frequency The output sinusoidal load current is segmented according to the carrier frequency to find the current magnitude corresponding to the switching carrier closest to zero, which is then used as the initial value of the threshold current. This allows for the maximum utilization of the thyristor. The initial value of the threshold current can then be calculated using the following formula:
[0030] Centered on this initial value, and considering the system hardware limits and operating condition safety margins, a reasonable threshold optimization interval is constructed, limiting the range of candidate threshold values to [value missing]. Among them, the lower threshold It is determined by both the minimum holding current and the safety margin current for reliable commutation of the system:
[0031] upper limit of threshold Constrained by both the rated current capacity of the IGBT and the peak load current, the minimum value of the two is taken:
[0032] In the formula: To provide the minimum holding current for the system, For the safety margin current under operating conditions, This is the rated current of the IGBT. This is the device current safety margin factor. This represents the peak load current. All subsequent threshold optimization calculations traverse candidate thresholds within this valid range, and calculate the corresponding cost, loss, and power quality performance indicators for each threshold.
[0033] According to the design principles of power devices, the cost of IGBT chips is approximately linearly related to the effective area of the chips. The chip area directly determines the current carrying capacity and hardware cost of the devices. The cost-based model can be expressed as:
[0034] In the formula: This is the cost coefficient per unit area of the chip. The effective area of the IGBT chip. Fixed costs associated with device packaging, driving, and structural support.
[0035] In this hybrid device topology, the IGBT only undertakes the tasks of current carrying and commutation in the small current zero-crossing region, and its maximum operating current is limited. Approximately equal to the threshold current ,Right now Therefore, the required chip area for the IGBT corresponding to the threshold current. Positively correlated with the threshold current, it can be equivalently expressed as:
[0036] In the formula This represents the ratio of chip area to current capacity. Substituting the area formula into the cost model yields the threshold-related IGBT cost function. :
[0037] To eliminate the influence of dimensions and facilitate multi-objective collaborative optimization, the cost function is normalized to obtain the cost sub-objective function. :
[0038] in, , These are the maximum cost and the minimum cost set, respectively.
[0039] The characteristics of this model are: the larger the threshold current, the larger the peak current carried by the IGBT, the higher the required chip area and device capacity, and the higher the overall hardware cost.
[0040] Assume the system has a sinusoidal load current. The instantaneous expression is ,in, For a specific moment; Let ω be the angular frequency; define the normalized threshold coefficient. , partition angle The system employs a partitioned conduction logic: when When the IGBT is turned on, it operates; when... At this time, the thyristor is responsible for conducting the main current.
[0041] When performing correlation analysis between IGBTs and thyristors, it is necessary to introduce equivalent switching frequencies. That is, under a selected threshold, the carrier frequency is divided into equivalent switching frequencies of the thyristors within a single power frequency cycle according to the partitioning angle. Equivalent switching frequency of IGBT The division method is as follows:
[0042] in The set carrier frequency; Using a general on-state loss integral model for power devices, the device Periodic average conduction loss One power frequency cycle Integral average of internal instantaneous power:
[0043] in, For devices The on-state pressure drop, Indicates the type of device. ,equal This indicates that the device is an IGBT, which is equal to This indicates that the device is a thyristor; device The on-state pressure drop is modeled using a linear fitting model: ,in For devices The turn-on threshold voltage, For devices The on-state equivalent internal resistance. Substituting into the integral, we obtain the general formula for conduction loss:
[0044] in, , respectively devices Average current, device The effective value of the current; when the device is an IGBT, i.e. When the IGBT operates in the low current zero-crossing region, its average current is calculated by periodic integration. With the effective value of current square :
[0045] Substituting into the general loss formula, we obtain the average conduction loss of the IGBT during the period. :
[0046] It should be noted that, At that time, the device Turn-on threshold voltage This refers to the voltage between the collector and emitter.
[0047] When the device is the main thyristor, it operates in the high-current range. The average current of the main thyristor's operating range is obtained by subtracting the full-cycle current characteristic from the IGBT's range characteristic. With the effective value of current square :
[0048] Similarly, the periodic average conduction loss of the main thyristor can be obtained. :
[0049] Based on the switching losses in the datasheet, the device switching loss modeling method is calculated, and a quadratic polynomial model is used to fit the energy consumption of a single IGBT switching operation. Relationship with threshold current:
[0050] In the formula , and The fitting coefficients for the first, second, and third switching losses are obtained through data fitting from experiments and simulations. Combined with the equivalent switching frequency in the zero-crossing region, the IGBT switching losses are obtained. :
[0051] in This is the equivalent switching frequency of the IGBT in the current zero-crossing region.
[0052] Since the main thyristor turn-off process uses a soft turn-off method with auxiliary circuit turn-off, the current flowing through the main circuit is generally much smaller than the resonant turn-off current generated by the turn-off circuit. Furthermore, the turn-off circuit itself has an energy feedback process, so this loss can be ignored. In other words, the turn-off energy consumption of the main thyristor is negligible. Then there is the turn-off loss of the main thyristor. .
[0053] Based on the datasheet, the turn-on energy consumption of the main thyristor can be expressed as:
[0054] In the formula , and The fitting coefficients for the first, second, and third switching losses are obtained through data fitting from experiments and simulations. Combined with the equivalent switching frequency in the zero-crossing region, the switching losses of the main thyristor are obtained. :
[0055] in The equivalent switching frequency of the main thyristor in the current-carrying region. The turn-on loss of the main thyristor; The total system loss includes IGBT conduction loss, main thyristor conduction loss, IGBT switching loss, and main thyristor switching loss. The expression is:
[0056] The total system loss is normalized to obtain the loss sub-objective function. :
[0057] in, , These are the set minimum loss and the set maximum loss, respectively.
[0058] The power quality sub-objective can be selected from the IGBT periodic conduction ratio or the total harmonic distortion of the current. The on-time ratio of a fully controlled IGBT directly determines the PWM modulation accuracy and output waveform quality of the system. A higher IGBT on-time ratio results in stronger current waveform controllability, lower harmonic content, and better power quality. (IGBT on-time ratio during the cycle is also relevant.) The calculation formula is:
[0059] Constructing power quality sub-objectives based on conduction ratio This indicator decreases as the IGBT conduction ratio increases, and a smaller value indicates better power quality.
[0060] If precise optimization is carried out based on simulation data, the total harmonic distortion (THD) of the current can be directly used as the evaluation index, and the power quality sub-objective function is:
[0061] in, The total harmonic distortion of the current corresponding to the threshold current obtained through simulation; , These are the minimum and maximum total harmonic distortion of the current, respectively.
[0062] To ensure the long-term safe and stable operation of power devices, the device junction temperature is introduced as a core constraint. The steady-state junction temperature of the device is determined by the heatsink substrate temperature, the total system losses, and the thermal resistance.
[0063] In the formula: This refers to the temperature of the heat sink base. This represents the equivalent thermal resistance of the device. The device must meet junction temperature limits to operate.
[0064] in, This is the junction temperature corresponding to the threshold current. This is the maximum permissible junction temperature.
[0065] Further considering the coupling relationship between chip area and thermal resistance, thermal resistance is approximately inversely proportional to the effective chip area. Substituting the chip area formula into this model, a refined junction temperature model with threshold correlation can be established:
[0066] in, The set junction temperature coefficient; By integrating the three sub-objectives of normalized cost, loss, and power quality, a weighted comprehensive optimization objective function is constructed. The optimization objective is to minimize overall performance.
[0067] In the formula, , , All are weighting coefficients and satisfy the normalization constraint. These correspond to the optimization priorities of cost, loss, and power quality, respectively.
[0068] A complete optimal threshold solution model is developed by combining current range, thermal safety, and power quality constraints. for:
[0069] The set of constraints is as follows:
[0070] in, This is the set threshold for total harmonic distortion of the current.
[0071] In this preferred embodiment, the main thyristor and auxiliary thyristor of the corresponding bridge arm module are controlled by combining the voltage direction of the turn-off capacitor and the two PWM signals, specifically as follows: When the PWM signal is a rising edge, the PWM signal is delayed by a set time to generate a rising edge trigger signal, which controls the main thyristor of the bridge arm module corresponding to the PWM signal to turn on; when the PWM signal is a falling edge, the PWM signal is used as a falling edge trigger signal, which controls the main thyristor of the bridge arm module corresponding to the PWM signal to turn off. like Figure 4 As shown, when the main thyristors of the first and fourth bridge arm modules are turned off, or the main thyristors of the second and third bridge arms are turned on, if the voltage direction of the turn-off capacitor is negative, the first and fourth auxiliary thyristors are turned on; if the voltage direction of the turn-off capacitor is positive, the second and third auxiliary thyristors are turned on. When the main thyristors controlling the second and third bridge arm modules are turned off, or the main thyristors controlling the first and fourth bridge arms are turned on, if the voltage direction of the turn-off capacitor is positive, the first and fourth auxiliary thyristors are turned on; if the voltage direction of the turn-off capacitor is negative, the second and third auxiliary thyristors are turned on. If the voltage at the connection point between the first and second auxiliary thyristors is positive, and the voltage at the connection point between the third and fourth auxiliary thyristors is negative, then the voltage direction of the turn-off capacitor is positive, and vice versa.
[0072] The multi-objective optimization control method of this embodiment was simulated and obtained as follows: Figures 5-7 The results; a comparison diagram of the control signals of the IGBT and the entire control module generated during simulation is shown below. Figure 5 As shown, Figure 5 (a) is the PWM signal for the upper bridge arm. Figure 5 (b) are the switching signals of the main thyristors (T1 and T4) of the first and fourth bridge arm modules. Figure 5 (c) are the switching signals of the IGBTs of the first and fourth bridge arm modules; Figure 6 The waveform of the output current in the high-load IGBT-thyristor hybrid module shows that the IGBT is connected to switch the current when the current crosses from positive to negative. Figure 7 The waveforms are shown for the capacitor voltage and the turn-off signal. Figure 7 (a) is a waveform diagram of the capacitor voltage when turned off. Figure 7 (b) is the waveform of the turn-off signal.
[0073] This disclosure can be a system, method, and / or computer program product. A computer program product may include a computer-readable storage medium having computer-readable program instructions loaded thereon for causing a processor to implement various aspects of this disclosure.
[0074] Computer-readable storage media can be tangible devices capable of holding and storing instructions for use by an instruction execution device. Computer-readable storage media can be, for example—but not limited to—electrical storage devices, magnetic storage devices, optical storage devices, electromagnetic storage devices, semiconductor storage devices, or any suitable combination of the foregoing. More specific examples (a non-exhaustive list) of computer-readable storage media include: portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), static random access memory (SRAM), portable compact disc read-only memory (CD-ROM), digital multifunction disc (DVD), memory sticks, floppy disks, mechanical encoding devices, such as punch cards or recessed protrusions storing instructions thereon, and any suitable combination of the foregoing. The computer-readable storage media used herein are not to be construed as transient signals themselves, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (e.g., light pulses through fiber optic cables), or electrical signals transmitted through wires.
[0075] The computer-readable program instructions described herein can be downloaded from computer-readable storage media to various computing / processing devices, or downloaded via a network, such as the Internet, local area network, wide area network, and / or wireless network, to an external computer or external storage device. The network may include copper transmission cables, fiber optic transmission, wireless transmission, routers, firewalls, switches, gateway computers, and / or edge servers. A network adapter card or network interface in each computing / processing device receives the computer-readable program instructions from the network and forwards them to the computer-readable storage media in the respective computing / processing device.
[0076] Computer program instructions used to perform the operations of this disclosure may be assembly instructions, instruction set architecture (ISA) instructions, machine instructions, machine-dependent instructions, microcode, firmware instructions, status setting data, or source code or object code written in any combination of one or more programming languages, including object-oriented programming languages such as Smalltalk, C++, etc., and conventional procedural programming languages such as the "C" language or similar programming languages. The computer-readable program instructions may execute entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving a remote computer, the remote computer may be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or may be connected to an external computer (e.g., via the Internet using an Internet service provider). In some embodiments, electronic circuitry, such as programmable logic circuitry, field-programmable gate arrays (FPGAs), or programmable logic arrays (PLAs), is personalized by utilizing the status information of the computer-readable program instructions to implement various aspects of this disclosure.
[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the protection scope of the claims of the present invention.
Claims
1. A high-load IGBT-thyristor hybrid module, wherein the hybrid module is an H-bridge structure composed of four bridge arm modules, characterized in that: The four bridge arm modules are designated as the first bridge arm module, the second bridge arm module, the third bridge arm module, and the fourth bridge arm module; each bridge arm module includes an IGBT, a diode, a main thyristor, and a resonant turn-off unit. The collector of the IGBT is connected to the anode of the main thyristor, and the emitter of the IGBT is connected to the cathode of the main thyristor. The resonant turn-off unit includes four auxiliary thyristors, a turn-off capacitor, a resonant inductor, and a feedback diode; the main thyristor and the resonant turn-off unit together form a fully controlled thyristor submodule. The four auxiliary thyristors are designated as the first auxiliary thyristor, the second auxiliary thyristor, the third auxiliary thyristor, and the fourth auxiliary thyristor. The four auxiliary thyristors form an H-bridge structure, and the turn-off capacitor is connected to the two AC terminals of the H-bridge structure to form an auxiliary unit. The cathode of the main thyristor is connected to the anode of the resonant inductor and one end of the resonant inductor. The anode of the main thyristor is connected to the cathode of the resonant inductor and the positive DC terminal of the auxiliary unit. The other end of the resonant inductor is connected to the negative DC terminal of the auxiliary unit.
2. A multi-objective optimization control method for a high-load IGBT-thyristor hybrid module, applied to the high-load IGBT-thyristor hybrid module as described in claim 1, characterized in that, include: Two complementary PWM signals are generated to control the high-load IGBT-thyristor hybrid module. One PWM signal is used to control the first bridge arm module and the fourth bridge arm module, and the other PWM signal is used to control the second bridge arm module and the third bridge arm module. The initial threshold current is calculated based on the peak load current, the fundamental frequency, and the corresponding carrier frequency. Based on the relationship between threshold current and IGBT cost, total system loss and power quality, cost sub-objective functions, loss sub-objective functions and power quality sub-objective functions are constructed; the weighted sum of the IGBT cost sub-objective functions, loss sub-objective functions and power quality sub-objective functions is used as the objective function of the comprehensive optimization model; The initial threshold current is used as the initial value for iteration, and the optimal threshold current is calculated through a comprehensive optimization model. Determine whether the current load current exceeds the optimal threshold current; if so, control the main thyristor and auxiliary thyristor of the corresponding bridge arm module by combining the voltage direction of the turn-off capacitor and the two PWM signals; otherwise, control the IGBT of the corresponding bridge arm module with the two PWM signals.
3. The multi-objective optimization control method for a high-load IGBT-thyristor hybrid module according to claim 2, characterized in that: The initial threshold current is calculated based on the peak load current, the fundamental frequency, and the corresponding carrier frequency, specifically as follows: Will Multiply by the fundamental frequency, then divide by the corresponding carrier frequency, substitute the division result into the sin function, and then multiply by the peak load current to obtain the initial threshold current.
4. The multi-objective optimization control method for a high-load IGBT-thyristor hybrid module according to claim 2, characterized in that: Construct the sub-objective function as follows: Multiplying the threshold current by the ratio of chip area to current capacity yields the chip area required for the IGBT corresponding to the threshold current. Multiplying the required chip area for the IGBT by the chip area unit cost factor, and adding the multiplier result to the set fixed cost, yields the IGBT cost associated with the threshold current. Normalizing the IGBT cost associated with the threshold current yields the cost sub-objective function.
5. The multi-objective optimization control method for a high-load IGBT-thyristor hybrid module according to claim 4, characterized in that: The loss sub-objective function is constructed as follows: The total system loss is the sum of IGBT conduction loss, main thyristor conduction loss, IGBT switching loss and main thyristor switching loss; For the conduction loss of the device, which includes IGBT and main thyristor, the conduction loss of the device is obtained by adding the product of the device's conduction threshold voltage and the average current of the device, plus the product of the device's on-state equivalent internal resistance and the square of the effective value of the device's current. The energy consumption of a single IGBT switch is obtained by multiplying the square of the threshold current by the first switching loss fitting coefficient, the product of the threshold current and the second switching loss fitting coefficient, and the third switching loss fitting coefficient. The IGBT switching loss is obtained by multiplying the equivalent switching frequency of the IGBT in the current zero-crossing region by the energy consumption of a single IGBT switch. The turn-on energy consumption of the main thyristor is obtained by multiplying the square of the threshold current by the first turn-on loss fitting coefficient, adding the product of the threshold current and the second turn-on loss fitting coefficient, and adding the third turn-on loss fitting coefficient. The switching loss of the main thyristor is obtained by multiplying the equivalent switching frequency of the main thyristor in the current zero-crossing region by the turn-on energy consumption of the main thyristor. Normalizing the total system loss yields the loss sub-objective function.
6. The multi-objective optimization control method for a high-load IGBT-thyristor hybrid module according to claim 5, characterized in that: The equivalent switching frequencies of the IGBT and the main thyristor in the current zero-crossing region are as follows: Will Subtract twice the partition angle Multiply the result of the subtraction by 2 and then divide by Multiply the result of the division by the set carrier frequency to obtain the equivalent switching frequency of the main thyristor in the current zero-crossing region; Double the partition angle Divide by Multiplying the result of the division by the set carrier frequency yields the equivalent switching frequency of the IGBT in the current zero-crossing region.
7. The multi-objective optimization control method for a high-load IGBT-thyristor hybrid module according to claim 6, characterized in that: The average current of the device and the square of the effective current of the device are as follows: The ratio of the threshold current to the peak load current is used as the normalized threshold coefficient; the normalized threshold coefficient is then substituted into the arcsin function to obtain the partition angle. ; Divide twice the peak load current by Multiply by 1 and The difference is used to obtain the average current of the IGBT; Divide twice the peak load current by Multiply by The average current of the main thyristor is obtained. Square of the peak load current divided by Multiply by and The difference is used to obtain the square of the effective value of the IGBT current; Divide the square of the peak load current by 2, and then subtract the square of the effective value of the IGBT current to obtain the square of the effective value of the main thyristor current.
8. The multi-objective optimization control method for a high-load IGBT-thyristor hybrid module according to claim 7, characterized in that: The sub-objective function for power quality is constructed as follows: Power quality is set as the IGBT cycle conduction percentage or total harmonic distortion of the current. When the power quality is set to the IGBT periodic conduction ratio, the power quality sub-objective function is 1 minus the IGBT periodic conduction ratio; the IGBT periodic conduction ratio is equal to 2 times. Divide by ; When power quality is set as total harmonic distortion (THD), the THD corresponding to different threshold currents is obtained through simulation. The THD corresponding to the current threshold current is then normalized and used as the sub-objective function of power quality.
9. The multi-objective optimization control method for a high-load IGBT-thyristor hybrid module according to claim 8, characterized in that: The constraints of the comprehensive optimization model include upper and lower limit constraints, junction temperature constraints, and total harmonic distortion of current constraints. The upper and lower limits are: the lower limit of the threshold current is equal to the minimum holding current and the safety margin current of the system for reliable commutation, and the upper limit of the threshold current is equal to the minimum of the load current peak and the ratio of the IGBT rated current to the device current safety margin coefficient. Junction temperature constraint: The junction temperature corresponding to the threshold current is less than or equal to the maximum allowable junction temperature; The total harmonic distortion (THD) constraint is: the THD corresponding to the threshold current is less than or equal to the set THD threshold.
10. The multi-objective optimization control method for a high-load IGBT-thyristor hybrid module according to claim 9, characterized in that: The junction temperature corresponding to the threshold current is as follows: Multiply the total system loss corresponding to the threshold current by the set junction temperature coefficient, then divide by the chip area required for the IGBT corresponding to the threshold current, and add the heat sink temperature to the division result to obtain the junction temperature corresponding to the threshold current.
11. The multi-objective optimization control method for a high-load IGBT-thyristor hybrid module according to claim 2, characterized in that: The main thyristor and auxiliary thyristor of the corresponding bridge arm module are controlled by combining the voltage direction of the turn-off capacitor and the two PWM signals, specifically as follows: When the PWM signal is a rising edge, the PWM signal is delayed by a set time to generate a rising edge trigger signal, which controls the main thyristor of the bridge arm module corresponding to the PWM signal to turn on; when the PWM signal is a falling edge, the PWM signal is used as a falling edge trigger signal, which controls the main thyristor of the bridge arm module corresponding to the PWM signal to turn off. When the main thyristors controlling the first and fourth bridge arm modules are turned off, or the main thyristors controlling the second and third bridge arms are turned on, if the voltage direction of the turn-off capacitor is negative, the first and fourth auxiliary thyristors are turned on; if the voltage direction of the turn-off capacitor is positive, the second and third auxiliary thyristors are turned on. When the main thyristors controlling the second and third bridge arm modules are turned off, or the main thyristors controlling the first and fourth bridge arms are turned on, if the voltage direction of the turn-off capacitor is positive, the first and fourth auxiliary thyristors are turned on; if the voltage direction of the turn-off capacitor is negative, the second and third auxiliary thyristors are turned on. If the voltage at the connection point between the first and second auxiliary thyristors is positive, and the voltage at the connection point between the third and fourth auxiliary thyristors is negative, then the voltage direction of the turn-off capacitor is positive, and vice versa.